Theory and Simulation of Metal-Insulator-Semiconductor (MIS) Photoelectrodes

Understanding Photovoltage Enhancement in Metal-Insulator Semiconductor Photoelectrodes with Metal Nanoparticles

A metal-insulator-semiconductor (MIS) structure holds great potential to promote photoelectrochemical (PEC) reactions, such as water splitting and CO2 reduction, for the storage of solar energy in chemical bonds. The semiconductor absorbs photons, creating electron-hole pairs; the insulator facilitates charge separation; and the metal collects the desired charge and facilitates its use in the electrochemical reaction. Despite these attractive features, MIS photoelectrodes are significantly limited by their photovoltage, a combination of the voltage generated from photon absorption minus the potential drop across the insulator. Herein, we use multiscale continuum modeling of the carrier, electrolyte, and interfacial transport to identify strategies for mitigating the deleterious potential drop across the insulator and enabling high MIS photovoltages. To this end, we model Ni/SiO2/n-Si photoanodes that employ a planar Ni film or Ni nanoparticles (np-MIS) and validate both models using experimental polarization curves and photovoltage measurements from the literature. The simulations reveal that the insulator potential drop is lower and hence achieves higher photovoltages for np-MIS structures than MIS structures because the electrolyte screens charge trapped at defect states between the semiconductor and the insulator. This electrolyte charge screening phenomenon can be further leveraged by using low loadings or small nanoparticles, which not only minimize the interfacial potential drop but also improve the photocurrent by enabling more light absorption. These insights contribute to the optimization of the np-MIS structures for sustainable energy conversion.

Opportunities and new developments for the study of surfaces and interfaces in soft condensed matter at the SIRIUS beamline of Synchrotron SOLEIL

The SIRIUS beamline of Synchrotron SOLEIL is dedicated to X-ray scattering and spectroscopy of surfaces and interfaces, covering the tender to mid-hard X-ray range (1.1-13 keV). The beamline has hosted a wide range of experiments in the field of soft interfaces and beyond, providing various grazing-incidence techniques such as diffraction and wide-angle scattering (GIXD/GIWAXS), small-angle scattering (GISAXS) and X-ray fluorescence in total reflection (TXRF). SIRIUS also offers specific sample environments tailored for in situ complementary experiments on solid and liquid surfaces. Recently, the beamline has added compound refractive lenses associated with a transfocator, allowing for the X-ray beam to be focused down to 10 µm × 10 µm while maintaining a reasonable flux on the sample. This new feature opens up new possibilities for faster GIXD measurements at the liquid-air interface and for measurements on samples with narrow geometries.

Light-enhanced electrical behavior of a Au/Al-doped ZnO/p-Si/Al heterostructure: insights from impedance and current-voltage analysis

In this study, we meticulously deposited an Al-doped ZnO nanoparticle thin film on a p-type silicon substrate using the precise sputtering method. We conducted a comprehensive exploration of the film's structure, morphology, and optical properties. X-ray diffraction (XRD) confirmed its polycrystalline wurtzite configuration with a dominant (002) orientation. High-resolution scanning electron microscopy (SEM) and atomic force microscopy (AFM) revealed a uniformly textured surface adorned with densely packed nanoparticles. Regarding optical properties, the Al-doped ZnO thin film exhibited exceptional transmittance exceeding 80% across visible and near-infrared spectra. Moving on to electrical characteristics, we assessed the Au/Al-doped ZnO/p-Si/Al heterostructure under dark and illuminated conditions. Through current-voltage (I-V) and impedance measurements, we observed significant improvements in conductivity and performance under illumination. Notably, there was an increase in current conduction and a reduction in impedance, highlighting the advantages of illumination. Collectively, these findings emphasize the promising potential of the Au/Al-doped ZnO/p-Si/Al heterostructure, particularly in the realms of optoelectronic devices and photovoltaics. With its ability to efficiently mobilize charges and adeptly assimilate light, this heterostructure stands as a frontrunner for transformative applications in these technologically vital domains.