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Belaid W, Gezgin SY, Basyooni-M Kabatas MA, Eker YR, Kiliç HŞ. Utilizing Gold Nanoparticle Decoration for Enhanced UV Photodetection in CdS Thin Films Fabricated by Pulsed Laser Deposition: Exploiting Plasmon-Induced Effects. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:416. [PMID: 38470747 DOI: 10.3390/nano14050416] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/23/2023] [Revised: 02/13/2024] [Accepted: 02/22/2024] [Indexed: 03/14/2024]
Abstract
UV sensors hold significant promise for various applications in both military and civilian domains. However, achieving exceptional detectivity, responsivity, and rapid rise/decay times remains a notable challenge. In this study, we address this challenge by investigating the photodetection properties of CdS thin films and the influence of surface-deposited gold nanoparticles (AuNPs) on their performance. CdS thin films were produced using the pulsed laser deposition (PLD) technique on glass substrates, with CdS layers at a 100, 150, and 200 nm thickness. Extensive characterization was performed to evaluate the thin films' structural, morphological, and optical properties. Photodetector devices based on CdS and AuNPs/CdS films were fabricated, and their performance parameters were evaluated under 365 nm light illumination. Our findings demonstrated that reducing CdS layer thickness enhanced performance concerning detectivity, responsivity, external quantum efficiency (EQE), and photocurrent gain. Furthermore, AuNP deposition on the surface of CdS films exhibited a substantial influence, especially on devices with thinner CdS layers. Among the configurations, AuNPs/CdS(100 nm) demonstrated the highest values in all evaluated parameters, including detectivity (1.1×1012 Jones), responsivity (13.86 A/W), EQE (47.2%), and photocurrent gain (9.2).
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Affiliation(s)
- Walid Belaid
- Department of Physics, Faculty of Science, Selçuk University, Konya 42075, Turkey
| | - Serap Yiğit Gezgin
- Department of Physics, Faculty of Science, Selçuk University, Konya 42075, Turkey
| | - Mohamed A Basyooni-M Kabatas
- Dynamics of Micro and Nano Systems Group, Department of Precision and Microsystems Engineering, Delft University of Technology, Mekelweg 2, 2628 CD Delft, The Netherlands
- Solar Research Laboratory, Solar and Space Research Department, National Research Institute of Astronomy and Geophysics, Cairo 11421, Egypt
- Science and Technology Research and Application Center (BITAM), Necmettin Erbakan University, Konya 42090, Turkey
| | - Yasin Ramazan Eker
- Science and Technology Research and Application Center (BITAM), Necmettin Erbakan University, Konya 42090, Turkey
- Department of Basic Sciences, Faculty of Engineering, Necmettin Erbakan University, Konya 42090, Turkey
| | - Hamdi Şükür Kiliç
- Department of Physics, Faculty of Science, Selçuk University, Konya 42075, Turkey
- Directorate of High Technology Research and Application Center, University of Selçuk, Konya 42031, Turkey
- Directorate of Laser-Induced Proton Therapy Application and Research Center, University of Selçuk, Konya 42031, Turkey
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2
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Chang S, Koo JH, Yoo J, Kim MS, Choi MK, Kim DH, Song YM. Flexible and Stretchable Light-Emitting Diodes and Photodetectors for Human-Centric Optoelectronics. Chem Rev 2024; 124:768-859. [PMID: 38241488 DOI: 10.1021/acs.chemrev.3c00548] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/21/2024]
Abstract
Optoelectronic devices with unconventional form factors, such as flexible and stretchable light-emitting or photoresponsive devices, are core elements for the next-generation human-centric optoelectronics. For instance, these deformable devices can be utilized as closely fitted wearable sensors to acquire precise biosignals that are subsequently uploaded to the cloud for immediate examination and diagnosis, and also can be used for vision systems for human-interactive robotics. Their inception was propelled by breakthroughs in novel optoelectronic material technologies and device blueprinting methodologies, endowing flexibility and mechanical resilience to conventional rigid optoelectronic devices. This paper reviews the advancements in such soft optoelectronic device technologies, honing in on various materials, manufacturing techniques, and device design strategies. We will first highlight the general approaches for flexible and stretchable device fabrication, including the appropriate material selection for the substrate, electrodes, and insulation layers. We will then focus on the materials for flexible and stretchable light-emitting diodes, their device integration strategies, and representative application examples. Next, we will move on to the materials for flexible and stretchable photodetectors, highlighting the state-of-the-art materials and device fabrication methods, followed by their representative application examples. At the end, a brief summary will be given, and the potential challenges for further development of functional devices will be discussed as a conclusion.
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Affiliation(s)
- Sehui Chang
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Ja Hoon Koo
- Department of Semiconductor Systems Engineering, Sejong University, Seoul 05006, Republic of Korea
- Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea
| | - Jisu Yoo
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Min Seok Kim
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Moon Kee Choi
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), UNIST, Ulsan 44919, Republic of Korea
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
| | - Dae-Hyeong Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University (SNU), Seoul 08826, Republic of Korea
- Department of Materials Science and Engineering, SNU, Seoul 08826, Republic of Korea
- Interdisciplinary Program for Bioengineering, SNU, Seoul 08826, Republic of Korea
| | - Young Min Song
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Artificial Intelligence (AI) Graduate School, GIST, Gwangju 61005, Republic of Korea
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3
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Mandal A, Khuntia SK, Mondal D, Mahadevan P, Bhattacharyya S. Spin Texture Sensitive Photodetection by Dion-Jacobson Tin Halide Perovskites. J Am Chem Soc 2023. [PMID: 37906676 DOI: 10.1021/jacs.3c10195] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/02/2023]
Abstract
The organic spacer molecule is known to regulate the optoelectronic properties of two-dimensional (2D) perovskites. We show that the spacer layer thickness determines the nature of optical transitions, direct or indirect, by controlling the structural properties of the inorganic layer. The spin-orbit interactions lead to different electron spin orientations for the states associated with the conduction band minimum (CBM) and the valence band maximum (VBM). This leads to a direct as well as an indirect component of the transitions, despite them being direct in momentum space. The shorter chains have a larger direct component, leading to a better optoelectronic performance. The mixed halide Sn2+ Dion-Jacobson (DJ) perovskite with the shortest 4-C diammonium spacer outshines the photodetection parameters of those having longer (6-C and 8-C) spacers and the corresponding Ruddlesden-Popper (RP) phases. The DJ system with a 4-C spacer and equimolar Br/I embodies an unprecedentedly high responsivity of 78.1 A W-1 under 3 V potential bias at 485 nm wavelength, among the DJ perovskites. Without any potential bias, this phase manifests the self-powered photodetection parameters of 0.085 A W-1 and 9.9 × 1010 jones. The unusual role of electron spin texture in these high-performance photodetectors of the lead-free DJ perovskites provides an avenue to exploit the information coded in spins for semiconductor devices without any ferromagnetic supplement or magnetic field.
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Affiliation(s)
- Arnab Mandal
- Department of Chemical Sciences and Centre for Advanced Functional Materials, Indian Institute of Science Education and Research (IISER) Kolkata, Mohanpur 741246, India
| | - Sanuja Kumar Khuntia
- Department of Condensed Matter Physics and Material Science, S. N. Bose National Centre for Basic Sciences, Kolkata 700106, India
| | - Debayan Mondal
- Department of Condensed Matter Physics and Material Science, S. N. Bose National Centre for Basic Sciences, Kolkata 700106, India
| | - Priya Mahadevan
- Department of Condensed Matter Physics and Material Science, S. N. Bose National Centre for Basic Sciences, Kolkata 700106, India
| | - Sayan Bhattacharyya
- Department of Chemical Sciences and Centre for Advanced Functional Materials, Indian Institute of Science Education and Research (IISER) Kolkata, Mohanpur 741246, India
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Radhakrishnan J, Kareem A, Ratna S, Senthilkumar S, Biswas K. Snowflake-like Metastable Wurtzite CuGaS 2/MoS 2 Composite with Superior Electrochemical HER Activity. ACS OMEGA 2022; 7:43883-43893. [PMID: 36506218 PMCID: PMC9730465 DOI: 10.1021/acsomega.2c05116] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/10/2022] [Accepted: 10/28/2022] [Indexed: 06/17/2023]
Abstract
In the present work, we report the synthesis of wurtzite CuGaS2 and its composite with MoS2 and explored their efficacy toward two important applications, viz. electrocatalytic hydrogen evolution reaction (HER) and adsorption of Rhodamine B dye. The CuGaS2 was synthesized via a low-temperature ethylenediamine-mediated solvothermal method. The obtained products were characterized by various techniques such as X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy to ascertain the phase formation, surface morphology, and elemental oxidation states. The electrocatalytic activity of the wurtzite CuGaS2 and CuGaS2/MoS2 composites toward HER was investigated, wherein the CuGaS2/MoS2 composite exhibited superior activity when compared to the pristine sample with a small Tafel slope of 56.2 mV dec-1 and an overpotential value of -464 mV at the current density of 10 mA cm-2. On the other hand, the synthesized CuGaS2 also showed an impressive adsorption behavior toward Rhodamine B dye with 99% adsorption in 60 min, which is relatively better than that observed with the composite material.
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Affiliation(s)
- Jagan Radhakrishnan
- Chemistry
Division, School of Advanced Sciences, Vellore
Institute of Technology, Chennai600127, India
| | - Abdul Kareem
- Department
of Chemistry, School of Advanced Sciences, Vellore Institute of Technology, Vellore632014, India
| | - Srabanti Ratna
- Chemistry
Division, School of Advanced Sciences, Vellore
Institute of Technology, Chennai600127, India
| | - Sellappan Senthilkumar
- Department
of Chemistry, School of Advanced Sciences, Vellore Institute of Technology, Vellore632014, India
| | - Krishnendu Biswas
- Chemistry
Division, School of Advanced Sciences, Vellore
Institute of Technology, Chennai600127, India
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5
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Zhang K, Ren Z, Cao H, Li L, Wang Y, Zhang W, Li Y, Yang H, Meng Y, Ho JC, Wei Z, Shen G. Near-Infrared Polarimetric Image Sensors Based on Ordered Sulfur-Passivation GaSb Nanowire Arrays. ACS NANO 2022; 16:8128-8140. [PMID: 35511070 DOI: 10.1021/acsnano.2c01455] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The near-infrared polarimetric image sensor has a wide range of applications in the military and civilian fields, thus developing into a research hotspot in recent years. Because of their distinguishing 1D structure features, the ordered GaSb nanowire (NW) arrays possess potential applications for near-infrared polarization photodetection. In this work, single-crystalline GaSb NWs are synthesized through a sulfur-catalyzed chemical vapor deposition process. A sulfur-passivation thin layer is formed on the NW surface, which prevents the GaSb NW core from being oxidized. The photodetector based on sulfur-passivation GaSb (S-GaSb) NWs has a lower dark current and higher responsivity than that built with pure GaSb NWs. The photodetector exhibits a large responsivity of 9.39 × 102 A/W and an ultrahigh detectivity of 1.10 × 1011 Jones for 1.55 μm incident light. Furthermore, the dichroic ratio of the device is measured to reach 2.65 for polarized 1.55 μm light. Through a COMSOL simulation, it is elucidated that the origin of the polarized photoresponse is the attenuation of a light electric field inside the NW when the angle of incident polarization light rotates. Moreover, a flexible polarimetric image sensor with 5 × 5 pixels is successfully constructed on the ordered S-GaSb NW arrays, and it exhibits a good imaging ability for incident near-infrared polarization light. These good photoresponse properties and polarized imaging abilities can empower ordered S-GaSb NW arrays with technological potentials in next-generation large-scale near-infrared polarimetric imaging sensors.
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Affiliation(s)
- Kai Zhang
- Hebei Key Lab of Optic-electronic Information and Materials, the College of Physics Science and Technology, Hebei University, Baoding 071002, China
- Institute of Physics, Chinese Academy of Sciences and University of Chinese Academy of Sciences, Beijing 100190, China
| | - Zhihui Ren
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelxsectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Huichen Cao
- Hebei Key Lab of Optic-electronic Information and Materials, the College of Physics Science and Technology, Hebei University, Baoding 071002, China
| | - Lingling Li
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Ying Wang
- Hebei Key Lab of Optic-electronic Information and Materials, the College of Physics Science and Technology, Hebei University, Baoding 071002, China
| | - Wei Zhang
- Hebei Key Lab of Optic-electronic Information and Materials, the College of Physics Science and Technology, Hebei University, Baoding 071002, China
| | - Yubao Li
- Hebei Key Lab of Optic-electronic Information and Materials, the College of Physics Science and Technology, Hebei University, Baoding 071002, China
| | - Haitao Yang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - You Meng
- Department of Materials Science and Engineering, and State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong 999077, China
| | - Johnny C Ho
- Department of Materials Science and Engineering, and State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong 999077, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Guozhen Shen
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
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6
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Saeed S, Dai R, Janjua RA, Huang D, Wang H, Wang Z, Ding Z, Zhang Z. Fast-Response Metal-Semiconductor-Metal Junction Ultraviolet Photodetector Based on ZnS:Mn Nanorod Networks via a Cost-Effective Method. ACS OMEGA 2021; 6:32930-32937. [PMID: 34901644 PMCID: PMC8655908 DOI: 10.1021/acsomega.1c04981] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/09/2021] [Accepted: 11/15/2021] [Indexed: 05/11/2023]
Abstract
In this work, Mn2+-doped ZnS nanorods were synthesized by a facile hydrothermal method. The morphology, structure, and composition of the as-prepared samples were investigated. The temperature-dependent photoluminescence of ZnS:Mn nanorods was analyzed, and the corresponding activation energies were calculated by using a simple two-step rate equation. Mn2+-related orange emission (4T1 → 6A1) demonstrates high stability and is comparatively less affected by the temperature variations than the defect-related emission. A metal-semiconductor-metal junction ultraviolet photodetector based on the nanorod networks has been fabricated by a cost-effective method. The device exhibits visible blindness, superior ultraviolet photodetection with a responsivity of 1.62 A/W, and significantly fast photodetection response with the rise and decay times of 12 and 25 ms, respectively.
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Affiliation(s)
- Sara Saeed
- Department
of Physics and CAS Key Laboratory of Strong-Coupled Quantum Matter
Physics, University of Science and Technology
of China, Hefei, Anhui 230026, China
| | - Rucheng Dai
- The
Center of Physical Experiments, University
of Science and Technology of China, Hefei 230026, China
| | - Raheel Ahmed Janjua
- The
Center of Physical Experiments, University
of Science and Technology of China, Hefei 230026, China
- National
Engineering Research Center for Optical Instruments, College of Optical
Science and Engineering, Zhejiang University, Hangzhou 310058, China
| | - Da Huang
- Department
of Physics, University of Science and Technology
of China, Hefei 230026, China
| | - He Wang
- Department
of Physics, University of Science and Technology
of China, Hefei 230026, China
| | - Zhongping Wang
- The
Center of Physical Experiments, University
of Science and Technology of China, Hefei 230026, China
| | - Zejun Ding
- Department
of Physics and CAS Key Laboratory of Strong-Coupled Quantum Matter
Physics, University of Science and Technology
of China, Hefei, Anhui 230026, China
| | - Zengming Zhang
- Department
of Physics and CAS Key Laboratory of Strong-Coupled Quantum Matter
Physics, University of Science and Technology
of China, Hefei, Anhui 230026, China
- The
Center of Physical Experiments, University
of Science and Technology of China, Hefei 230026, China
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7
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Yokota T, Fukuda K, Someya T. Recent Progress of Flexible Image Sensors for Biomedical Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2004416. [PMID: 33527511 DOI: 10.1002/adma.202004416] [Citation(s) in RCA: 50] [Impact Index Per Article: 16.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/29/2020] [Revised: 08/29/2020] [Indexed: 06/12/2023]
Abstract
Flexible image sensors have attracted increasing attention as new imaging devices owing to their lightness, softness, and bendability. Since light can measure inside information from outside of the body, optical-imaging-based approaches, such as X-rays, are widely used for disease diagnosis in hospitals. Unlike conventional sensors, flexible image sensors are soft and can be directly attached to a curved surface, such as the skin, for continuous measurement of biometric information with high accuracy. Therefore, they are expected to gain wide application to wearable devices, as well as home medical care. Herein, the application of such sensors to the biomedical field is introduced. First, their individual components, photosensors, and switching elements, are explained. Then, the basic parameters used to evaluate the performance of each of these elements and the image sensors are described. Finally, examples of measuring the dynamic and static biometric information using flexible image sensors, together with relevant real-world measurement cases, are presented. Furthermore, recent applications of the flexible image sensors in the biomedical field are introduced.
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Affiliation(s)
- Tomoyuki Yokota
- Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
| | - Kenjiro Fukuda
- Center for Emergent Matter Science & Thin-Film Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama, 351-0198, Japan
| | - Takao Someya
- Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
- Center for Emergent Matter Science & Thin-Film Device Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama, 351-0198, Japan
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Li L, Ye S, Qu J, Zhou F, Song J, Shen G. Recent Advances in Perovskite Photodetectors for Image Sensing. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2005606. [PMID: 33728799 DOI: 10.1002/smll.202005606] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/09/2020] [Revised: 10/20/2020] [Indexed: 05/12/2023]
Abstract
In recent years, metal halide perovskites have been widely investigated to fabricate photodetectors for image sensing due to the excellent photoelectric performance, tunable bandgap, and low-cost solution preparation process. In this review, a comprehensive overview of the recent advances in perovskite photodetectors for image sensing is provided. First, the key performance parameters and the basic device types of photodetectors are briefly introduced. Then, the recent developments of image sensors on the basis of different dimensional perovskite materials, including 0D, 1D, 2D, and 3D perovskite materials, are highlighted. Besides the device structures and photoelectric properties of perovskite image sensors, the preparation methods of perovskite photodetector arrays are also analyzed. Subsequently, the single-pixel imaging of perovskite photodetectors and the strategies to fabricate narrowband perovskite photodetectors for color discrimination are discussed. Finally, the potential challenges and possible solutions for the future development of perovskite image sensors are presented.
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Affiliation(s)
- Ludong Li
- Center for Biomedical Optics and Photonics (CBOP) & College of Physics and Optoelectronic Engineering, Key Laboratory of Optoelectronic Devices and Systems, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Shuai Ye
- Center for Biomedical Optics and Photonics (CBOP) & College of Physics and Optoelectronic Engineering, Key Laboratory of Optoelectronic Devices and Systems, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Junle Qu
- Center for Biomedical Optics and Photonics (CBOP) & College of Physics and Optoelectronic Engineering, Key Laboratory of Optoelectronic Devices and Systems, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Feifan Zhou
- Center for Biomedical Optics and Photonics (CBOP) & College of Physics and Optoelectronic Engineering, Key Laboratory of Optoelectronic Devices and Systems, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Jun Song
- Center for Biomedical Optics and Photonics (CBOP) & College of Physics and Optoelectronic Engineering, Key Laboratory of Optoelectronic Devices and Systems, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Guozhen Shen
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
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Improved Photodetection Performance of Nanostructured CdS films Based Photodetectors Via Novel Er Doping. J Inorg Organomet Polym Mater 2021. [DOI: 10.1007/s10904-021-02004-2] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/21/2022]
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10
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Choi JM, Jang HY, Kim AR, Kwon JD, Cho B, Park MH, Kim Y. Ultra-flexible and rollable 2D-MoS 2/Si heterojunction-based near-infrared photodetector via direct synthesis. NANOSCALE 2021; 13:672-680. [PMID: 33346769 DOI: 10.1039/d0nr07091b] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Atomic two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted significant attention for application in various optoelectronic devices such as image sensors, biomedical imaging systems, and consumer electronics and in diverse spectroscopic analyses. However, a complicated fabrication process, involving transfer and alignment of as-synthesized 2D layers onto flexible target substrates, hinders the development of flexible high-performance heterojunction-based photodetectors. Herein, an ultra-flexible 2D-MoS2/Si heterojunction-based photodetector is successfully fabricated through atmospheric-pressure plasma enhanced chemical vapor deposition, which enables the direct deposition of multi-layered MoS2 onto a flexible Si substrate at low temperature (<200 °C). The photodetector is responsive to near infrared light (λ = 850 nm), showing responsivity of 10.07 mA W-1 and specific detectivity (D*) of 4.53 × 1010 Jones. The measured photocurrent as a function of light intensity exhibits good linearity with a power law exponent of 0.84, indicating negligible trapping/de-trapping of photo-generated carriers at the heterojunction interface, which facilitates photocarrier collection. Furthermore, the photodetectors can be bent with a small bending radius (5 mm) and wrapped around a glass rod, showing excellent photoresponsivity under various bending radii. Hence, the device exhibits excellent flexibility, rollability, and durability under harsh bending conditions. This photodetector has significant potential for use in next-generation flexible and patchable optoelectronic devices.
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Affiliation(s)
- Jung-Min Choi
- Materials Center for Energy Convergence, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon, Gyeongnam 51508, Republic of Korea. and School of Materials Science and Engineering, Pusan National University, 2 Busandaehak-ro 63-beon-gil, Geumjeong-gu, Busan 46241, Republic of Korea.
| | - Hye Yeon Jang
- Department of Advanced Materials Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-gu, Chougju, Chungbuk 28644, Republic of Korea.
| | - Ah Ra Kim
- Materials Center for Energy Convergence, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon, Gyeongnam 51508, Republic of Korea.
| | - Jung-Dae Kwon
- Materials Center for Energy Convergence, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon, Gyeongnam 51508, Republic of Korea.
| | - Byungjin Cho
- Department of Advanced Materials Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-gu, Chougju, Chungbuk 28644, Republic of Korea.
| | - Min Hyuk Park
- School of Materials Science and Engineering, Pusan National University, 2 Busandaehak-ro 63-beon-gil, Geumjeong-gu, Busan 46241, Republic of Korea.
| | - Yonghun Kim
- Materials Center for Energy Convergence, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon, Gyeongnam 51508, Republic of Korea.
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11
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Li Y, Yin M, Sun J, Liang K, Fan Y, Li Z. Preparation condition optimization and stability of cubic phase CdS in photocatalytic hydrogen production. NEW J CHEM 2021. [DOI: 10.1039/d1nj00558h] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/12/2023]
Abstract
Cubic CdS prepared with a Cd : S ratio of 5 : 8 and an aging time of 6 h exhibits excellent activity and phase stability.
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Affiliation(s)
- Yixian Li
- Green Catalysis Center and College of Chemistry
- Zhengzhou University
- Zhengzhou 45001
- China
| | - Mingcai Yin
- Green Catalysis Center and College of Chemistry
- Zhengzhou University
- Zhengzhou 45001
- China
| | - Jiangfan Sun
- Green Catalysis Center and College of Chemistry
- Zhengzhou University
- Zhengzhou 45001
- China
| | - Kaiyue Liang
- Green Catalysis Center and College of Chemistry
- Zhengzhou University
- Zhengzhou 45001
- China
| | - Yaoting Fan
- Green Catalysis Center and College of Chemistry
- Zhengzhou University
- Zhengzhou 45001
- China
| | - Zhongjun Li
- Green Catalysis Center and College of Chemistry
- Zhengzhou University
- Zhengzhou 45001
- China
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12
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A solar light regenerated adsorbent by implanting CdS into an active covalent triazine framework to decontaminate tetracycline. Sep Purif Technol 2021. [DOI: 10.1016/j.seppur.2020.117696] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/19/2022]
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13
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Wu L, Xu J, Li Q, Fan Z, Mei F, Zhou Y, Yan J, Chen Y. Enhanced performance of In 2O 3 nanowire field effect transistors with controllable surface functionalization of Ag nanoparticles. NANOTECHNOLOGY 2020; 31:355703. [PMID: 32357357 DOI: 10.1088/1361-6528/ab8f4a] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Indium oxide (In2O3) nanowire field effect transistors (FETs) have great potential in electronic and sensor applications owing to their suitable band width and high electron mobility. However, the In2O3 nanowire FETs reported previously were operated in a depletion-mode, not suitable to the integrated circuits result of the high-power consumption. Therefore, tuning the electrical properties of In2O3 nanowire FETs into enhancement-mode is critical for the successful application in the fields of high-performance electronics, optoelectronics and detectors. In the work, a simple but effective strategy was carried out by preparing Ag nanoparticle functionalized In2O3 NWs to regulate the threshold voltage (Vth) of In2O3 NW FETs, successfully achieving enhanced-mode devices. The threshold voltage can be regulated from -6.9 V to +7 V by controlling Ag density via deposition time. In addition, the devices exhibited high performance: huge Ion/Ioff ratio > 108, large maximum saturation current ≈ 800 mA and excellent carrier mobility ≈ 129 cm2 Vċs-1. The enhanced performance is attributed to the surface passivation by Ag nanoparticles to reduce the density of traps and the charge transfer between traps and the nanowires to regulate the Vth. The result indicates the application of metal nanoparticles significantly improve oxide NW for low-power FETs.
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Affiliation(s)
- Liming Wu
- Hubei Key Laboratory for High-efficiency Utilization of Solar Energy and Operation Control of Energy Storage System, Hubei University of Technology, Wuhan 430068, People's Republic of China. School of Electrical & Electronic Engineering, Hubei University of Technology, Wuhan 430068, People's Republic of China
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Nalwa HS. A review of molybdenum disulfide (MoS 2) based photodetectors: from ultra-broadband, self-powered to flexible devices. RSC Adv 2020; 10:30529-30602. [PMID: 35516069 PMCID: PMC9056353 DOI: 10.1039/d0ra03183f] [Citation(s) in RCA: 47] [Impact Index Per Article: 11.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/09/2020] [Accepted: 07/17/2020] [Indexed: 12/23/2022] Open
Abstract
Two-dimensional transition metal dichalcogenides (2D TMDs) have attracted much attention in the field of optoelectronics due to their tunable bandgaps, strong interaction with light and tremendous capability for developing diverse van der Waals heterostructures (vdWHs) with other materials. Molybdenum disulfide (MoS2) atomic layers which exhibit high carrier mobility and optical transparency are very suitable for developing ultra-broadband photodetectors to be used from surveillance and healthcare to optical communication. This review provides a brief introduction to TMD-based photodetectors, exclusively focused on MoS2-based photodetectors. The current research advances show that the photoresponse of atomic layered MoS2 can be significantly improved by boosting its charge carrier mobility and incident light absorption via forming MoS2 based plasmonic nanostructures, halide perovskites-MoS2 heterostructures, 2D-0D MoS2/quantum dots (QDs) and 2D-2D MoS2 hybrid vdWHs, chemical doping, and surface functionalization of MoS2 atomic layers. By utilizing these different integration strategies, MoS2 hybrid heterostructure-based photodetectors exhibited remarkably high photoresponsivity raging from mA W-1 up to 1010 A W-1, detectivity from 107 to 1015 Jones and a photoresponse time from seconds (s) to nanoseconds (10-9 s), varying by several orders of magnitude from deep-ultraviolet (DUV) to the long-wavelength infrared (LWIR) region. The flexible photodetectors developed from MoS2-based hybrid heterostructures with graphene, carbon nanotubes (CNTs), TMDs, and ZnO are also discussed. In addition, strain-induced and self-powered MoS2 based photodetectors have also been summarized. The factors affecting the figure of merit of a very wide range of MoS2-based photodetectors have been analyzed in terms of their photoresponsivity, detectivity, response speed, and quantum efficiency along with their measurement wavelengths and incident laser power densities. Conclusions and the future direction are also outlined on the development of MoS2 and other 2D TMD-based photodetectors.
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Affiliation(s)
- Hari Singh Nalwa
- Advanced Technology Research 26650 The Old Road Valencia California 91381 USA
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15
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Yang X, Yang X, Wang T, Wang B, Chen Q, Wang Y, Liu D. CdS structures prepared in AAO nanochannels via different synthesis methods under limited conditions. NEW J CHEM 2020. [DOI: 10.1039/c9nj04796d] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
CdS is mainly prepared in nonlimited condition, inspired by the potential application of biomimetic nanochannels, we used AAO template as the limited condition to synthesize CdS structures via different synthesis methods for new application.
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Affiliation(s)
- Xiande Yang
- Guangxi Key Laboratory of Natural Polymer Chemistry and Physics
- Nanning Normal University
- Nanning 530001
- P. R. China
| | - Xudong Yang
- Engineering Research Center of Nano-Geomaterials of Ministry of Education, Faculty of Material Science and Chemistry
- China University of Geosciences
- 388 Lumo Road
- Wuhan 430074
- P. R. China
| | - Tinglan Wang
- Engineering Research Center of Nano-Geomaterials of Ministry of Education, Faculty of Material Science and Chemistry
- China University of Geosciences
- 388 Lumo Road
- Wuhan 430074
- P. R. China
| | - Boyou Wang
- Engineering Research Center of Nano-Geomaterials of Ministry of Education, Faculty of Material Science and Chemistry
- China University of Geosciences
- 388 Lumo Road
- Wuhan 430074
- P. R. China
| | - Qiao Chen
- Engineering Research Center of Nano-Geomaterials of Ministry of Education, Faculty of Material Science and Chemistry
- China University of Geosciences
- 388 Lumo Road
- Wuhan 430074
- P. R. China
| | - Yongqian Wang
- Engineering Research Center of Nano-Geomaterials of Ministry of Education, Faculty of Material Science and Chemistry
- China University of Geosciences
- 388 Lumo Road
- Wuhan 430074
- P. R. China
| | - Deliang Liu
- State Key Laboratory of Geological Processes and Mineral Resources
- Collaborative Innovation Center for Exploration of Strategic Mineral Resources
- Faculty of Earth Resource
- China University of Geosciences
- Wuhan 430074
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16
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Yang X, Wang T, Zhang H, Chen Q, Wang B, Wang Y, Meng D. Chiral cysteine selective transport of proteins by CdS nanostructures modified anodic aluminum oxide template. J Photochem Photobiol A Chem 2019. [DOI: 10.1016/j.jphotochem.2019.04.041] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/18/2022]
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Yang X, Ma J, Wang T, Wang B, Meng D, Wang Y. Synthesis, growth mechanism and photocatalytic property of CdS with different kinds of surfactants. NEW J CHEM 2019. [DOI: 10.1039/c9nj01856e] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/17/2022]
Abstract
CdS is a well-known visible-light-sensitive semiconductor and has been widely used in photocatalysis. In order to improve the photocatalytic of CdS, CdS structures with different kinds of surfactants were synthesized by hydrothermal method.
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Affiliation(s)
- Xiande Yang
- Engineering Research Center of Nano-Geomaterials of Ministry of Education, Faculty of Material Science and Chemistry
- China University of Geosciences
- Wuhan 430074
- P. R. China
| | - Jun Ma
- Engineering Research Center of Nano-Geomaterials of Ministry of Education, Faculty of Material Science and Chemistry
- China University of Geosciences
- Wuhan 430074
- P. R. China
| | - Tinglan Wang
- Engineering Research Center of Nano-Geomaterials of Ministry of Education, Faculty of Material Science and Chemistry
- China University of Geosciences
- Wuhan 430074
- P. R. China
| | - Boyou Wang
- Engineering Research Center of Nano-Geomaterials of Ministry of Education, Faculty of Material Science and Chemistry
- China University of Geosciences
- Wuhan 430074
- P. R. China
| | - Dawei Meng
- Engineering Research Center of Nano-Geomaterials of Ministry of Education, Faculty of Material Science and Chemistry
- China University of Geosciences
- Wuhan 430074
- P. R. China
| | - Yongqian Wang
- Engineering Research Center of Nano-Geomaterials of Ministry of Education, Faculty of Material Science and Chemistry
- China University of Geosciences
- Wuhan 430074
- P. R. China
- Guangdong Provincial Key Laboratory of Soil and Groundwater Pollution Control
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18
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Liu Z, Liu J, Huang Y, Li J, Yuan Y, Ye H, Zhu D, Wang Z, Tang A. From one-dimensional to two-dimensional wurtzite CuGaS 2 nanocrystals: non-injection synthesis and photocatalytic evolution. NANOSCALE 2018; 11:158-169. [PMID: 30525146 DOI: 10.1039/c8nr07353h] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Multinary copper-based chalcogenides exhibit significant performance in photocatalytic hydrogen evolution due to their suitable optical bandgap for visible light absorption and environmentally friendly character. Herein, high-quality wurtzite CuGaS2 (CGS) nanocrystals (NCs) were synthesized by using a one-step heating-up process without any injection, and the morphology could be tuned from one-dimensional (1D) to two-dimensional (2D) by precise choice of surface ligands and gallium precursors. The formation mechanism of CGS NCs was studied comprehensively by means of the temporal-evolution of the morphology, crystal structure and optical absorption results. The reaction started from djurleite Cu31S16 NCs, and then proceeded with the formation of Cu31S16-CGS heteronanostructures (HNS), and finally the transformation from HNS to monophasic CGS nanorods took place with prolonging of the synthesis time. The optical bandgap and the energy level of the different-dimensional CGS NCs exhibited a strong dependence on the morphology change, which correlated with the percentage of the exposed {001} and {100} facets. The theoretical calculation based on density functional theory (DFT) revealed that the (001) surface facilitated the charge transport rather than the (100) surface, which was consistent with the electrochemical impedance spectroscopy (EIS) results. As a result, the 2D CGS nanoplates with more exposed {001} facets exhibited an attractive photocatalytic hydrogen production activity under simulated solar illumination as compared to 1D and quasi-2D counterparts. This study demonstrates that control over the dimension of I-III-V group semiconductor NCs could lead to a significant improvement of the photocatalytic hydrogen evolution.
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Affiliation(s)
- Zheming Liu
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Science, Beijing JiaoTong University, Beijing 100044, China.
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Wang L, Chen P, Wang YC, Liu GS, Liu C, Xie X, Li JZ, Yang BR. Tape-Based Photodetector: Transfer Process and Persistent Photoconductivity. ACS APPLIED MATERIALS & INTERFACES 2018; 10:16596-16604. [PMID: 29687705 DOI: 10.1021/acsami.8b02233] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
We report a facile transfer method to fabricate flexible photodetectors directly on tape, wherein the films formed by different processes were integrated together. The tape-based photodetectors with CdS nanowire (NW) active layers exhibited good performances as those fabricated by conventional processes. The obvious persistent photocurrent in our device was eliminated by introducing a conductive polymer poly(3,4-ethylenedioxythiophene)polystyrene sulfonate (PEDOT:PSS) onto the CdS NW layer. By adjusting the concentration of the PEDOT:PSS aqueous solution, a device with a fast response, ultrashort decay time, and relatively large photocurrent was obtained. The decay times were 11.59 and 6.64 ms for devices using electrodes of silver NWs and gold, respectively. These values are much shorter than the shortest decay times (on the order of hundreds of milliseconds) reported previously.
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Affiliation(s)
- Li Wang
- School of Electronics and Information Technology, State Key Laboratory of Opto-Electronic Materials & Technologies, Guangdong Province Key Laboratory of Display Materials and Technologies , Sun Yat-sen University , Guangzhou 510275 , People's Republic of China
| | - Peng Chen
- School of Electronics and Information Technology, State Key Laboratory of Opto-Electronic Materials & Technologies, Guangdong Province Key Laboratory of Display Materials and Technologies , Sun Yat-sen University , Guangzhou 510275 , People's Republic of China
| | - Yu-Cheng Wang
- School of Electronics and Information Technology, State Key Laboratory of Opto-Electronic Materials & Technologies, Guangdong Province Key Laboratory of Display Materials and Technologies , Sun Yat-sen University , Guangzhou 510275 , People's Republic of China
| | - Gui-Shi Liu
- School of Electronics and Information Technology, State Key Laboratory of Opto-Electronic Materials & Technologies, Guangdong Province Key Laboratory of Display Materials and Technologies , Sun Yat-sen University , Guangzhou 510275 , People's Republic of China
| | - Chuan Liu
- School of Electronics and Information Technology, State Key Laboratory of Opto-Electronic Materials & Technologies, Guangdong Province Key Laboratory of Display Materials and Technologies , Sun Yat-sen University , Guangzhou 510275 , People's Republic of China
| | - Xi Xie
- School of Electronics and Information Technology, State Key Laboratory of Opto-Electronic Materials & Technologies, Guangdong Province Key Laboratory of Display Materials and Technologies , Sun Yat-sen University , Guangzhou 510275 , People's Republic of China
| | - Jing-Zhou Li
- School of Electronics and Information Technology, State Key Laboratory of Opto-Electronic Materials & Technologies, Guangdong Province Key Laboratory of Display Materials and Technologies , Sun Yat-sen University , Guangzhou 510275 , People's Republic of China
| | - Bo-Ru Yang
- School of Electronics and Information Technology, State Key Laboratory of Opto-Electronic Materials & Technologies, Guangdong Province Key Laboratory of Display Materials and Technologies , Sun Yat-sen University , Guangzhou 510275 , People's Republic of China
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20
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Dai Y, Wang X, Peng W, Xu C, Wu C, Dong K, Liu R, Wang ZL. Self-Powered Si/CdS Flexible Photodetector with Broadband Response from 325 to 1550 nm Based on Pyro-phototronic Effect: An Approach for Photosensing below Bandgap Energy. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:1705893. [PMID: 29334148 DOI: 10.1002/adma.201705893] [Citation(s) in RCA: 55] [Impact Index Per Article: 9.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/10/2017] [Revised: 11/20/2017] [Indexed: 05/22/2023]
Abstract
Cadmium sulfide (CdS) has received widespread attention as the building block of optoelectronic devices due to its extraordinary optoelectronic properties, low work function, and excellent thermal and chemical stability. Here, a self-powered flexible photodetector (PD) based on p-Si/n-CdS nanowires heterostructure is fabricated. By introducing the pyro-phototronic effect derived from wurtzite structured CdS, the self-powered PD shows a broadband response range, even beyond the bandgap limitation, from UV (325 nm) to near infrared (1550 nm) under zero bias with fast response speed. The light-induced pyroelectric potential is utilized to modulate the optoelectronic processes and thus improve the photoresponse performance. Lasers with different wavelengths have different effects on the self-powered PDs and corresponding working mechanisms are carefully investigated. Upon 325 nm laser illumination, the rise time and fall time of the self-powered PD are 245 and 277 µs, respectively, which are faster than those of most previously reported CdS-based nanostructure PDs. Meanwhile, the photoresponsivity R and specific detectivity D* regarding to the relative peak-to-peak current are both enhanced by 67.8 times, compared with those only based on the photovoltaic effect-induced photocurrent. The self-powered flexible PD with fast speed, stable, and broadband response is expected to have extensive applications in various environments.
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Affiliation(s)
- Yejing Dai
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA
- Key Laboratory of Advanced Ceramics and Machining Technology, Ministry of Education, School of Materials Science and Engineering, Tianjin University, Tianjin, 300072, China
| | - Xingfu Wang
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA
| | - Wenbo Peng
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA
- School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Cheng Xu
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA
| | - Changsheng Wu
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA
| | - Kai Dong
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA
| | - Ruiyuan Liu
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA
| | - Zhong Lin Wang
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China
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21
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Xie C, Yan F. Flexible Photodetectors Based on Novel Functional Materials. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2017; 13:1701822. [PMID: 28922544 DOI: 10.1002/smll.201701822] [Citation(s) in RCA: 91] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2017] [Revised: 07/08/2017] [Indexed: 06/07/2023]
Abstract
Flexible photodetectors have attracted a great deal of research interest in recent years due to their great possibilities for application in a variety of emerging areas such as flexible, stretchable, implantable, portable, wearable and printed electronics and optoelectronics. Novel functional materials, including materials with zero-dimensional (0D) and one-dimensional (1D) inorganic nanostructures, two-dimensional (2D) layered materials, organic semiconductors and perovskite materials, exhibit appealing electrical and optoelectrical properties, as well as outstanding mechanical flexibility, and have been widely studied as building blocks in cost-effective flexible photodetection. Here, we comprehensively review the outstanding performance of flexible photodetectors made from these novel functional materials reported in recent years. The photoresponse characteristics and flexibility of the devices will be discussed systematically. Summaries and challenges are provided to guide future directions of this vital research field.
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Affiliation(s)
- Chao Xie
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
- School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, 230009, China
| | - Feng Yan
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
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22
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Ganesh RS, Durgadevi E, Navaneethan M, Sharma SK, Binitha H, Ponnusamy S, Muthamizhchelvan C, Hayakawa Y. Visible light induced photocatalytic degradation of methylene blue and rhodamine B from the catalyst of CdS nanowire. Chem Phys Lett 2017. [DOI: 10.1016/j.cplett.2017.06.021] [Citation(s) in RCA: 39] [Impact Index Per Article: 5.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
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Li L, Gu L, Lou Z, Fan Z, Shen G. ZnO Quantum Dot Decorated Zn 2SnO 4 Nanowire Heterojunction Photodetectors with Drastic Performance Enhancement and Flexible Ultraviolet Image Sensors. ACS NANO 2017; 11:4067-4076. [PMID: 28323410 DOI: 10.1021/acsnano.7b00749] [Citation(s) in RCA: 65] [Impact Index Per Article: 9.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/04/2023]
Abstract
Here we report the fabrication of high-performance ultraviolet photodetectors based on a heterojunction device structure in which ZnO quantum dots were used to decorate Zn2SnO4 nanowires. Systematic investigations have shown their ultrahigh light-to-dark current ratio (up to 6.8 × 104), specific detectivity (up to 9.0 × 1017 Jones), photoconductive gain (up to 1.1 × 107), fast response, and excellent stability. Compared with a pristine Zn2SnO4 nanowire, a quantum dot decorated nanowire demonstrated about 10 times higher photocurrent and responsivity. Device physics modeling showed that their high performance originates from the rational energy band engineering, which allows efficient separation of electron-hole pairs at the interfaces between ZnO quantum dots and a Zn2SnO4 nanowire. As a result of band engineering, holes migrate to ZnO quantum dots, which increases electron concentration and lifetime in the nanowire conduction channel, leading to significantly improved photoresponse. The enhancement mechanism found in this work can also be used to guide the design of high-performance photodetectors based on other nanomaterials. Furthermore, flexible ultraviolet photodetectors were fabricated and integrated into a 10 × 10 device array, which constitutes a high-performance flexible ultraviolet image sensor. These intriguing results suggest that the band alignment engineering on nanowires can be rationally achieved using compound semiconductor quantum dots. This can lead to largely improved device performance. Particularly for ZnO quantum dot decorated Zn2SnO4 nanowires, these decorated nanowires may find broad applications in future flexible and wearable electronics.
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Affiliation(s)
- Ludong Li
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China
- College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences , Beijing 100029, China
| | - Leilei Gu
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology , Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Zheng Lou
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China
| | - Zhiyong Fan
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology , Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Guozhen Shen
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China
- College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences , Beijing 100029, China
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Song E, Guo Q, Huang G, Jia B, Mei Y. Bendable Photodetector on Fibers Wrapped with Flexible Ultrathin Single Crystalline Silicon Nanomembranes. ACS APPLIED MATERIALS & INTERFACES 2017; 9:12171-12175. [PMID: 28351140 DOI: 10.1021/acsami.7b02123] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Silicon (Si) nanomembranes (NMs) enable conformal covering on complicated surfaces for novel applications. We adopt classical fibers as flexible/curved substrates and wrap them with freestanding ultrathin Si-NMs with a thickness of ∼20 nm. Intrinsic defects in single-crystalline Si-NMs provide a flow path for hydrofluoric acid (HF) to release the NM with a consecutive area of ∼0.25 cm2. Such Si-NMs with ultralow flexural rigidities are transferred onto a single-mode fiber (SMF) and functionalized into bendable photodetectors, which detects the leaked light when the fiber is bent. Our demonstration exemplifies optoelectronic applications in flexible photodetector for Si-NMs in a three-dimensional (3D) geometry.
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Affiliation(s)
- Enming Song
- Department of Materials Science, Fudan University , 220 Handan Road, Shanghai 200433, China
| | - Qinglei Guo
- Department of Materials Science, Fudan University , 220 Handan Road, Shanghai 200433, China
| | - Gaoshan Huang
- Department of Materials Science, Fudan University , 220 Handan Road, Shanghai 200433, China
| | - Bo Jia
- Department of Materials Science, Fudan University , 220 Handan Road, Shanghai 200433, China
| | - Yongfeng Mei
- Department of Materials Science, Fudan University , 220 Handan Road, Shanghai 200433, China
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Zhang X, Liu B, Liu Q, Yang W, Xiong C, Li J, Jiang X. Ultrasensitive and Highly Selective Photodetections of UV-A Rays Based on Individual Bicrystalline GaN Nanowire. ACS APPLIED MATERIALS & INTERFACES 2017; 9:2669-2677. [PMID: 28029770 DOI: 10.1021/acsami.6b14907] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/20/2023]
Abstract
The detection of UV-A rays (wavelength of 320-400 nm) using functional semiconductor nanostructures is of great importance in either fundamental research or technological applications. In this work, we report the catalytic synthesis of peculiar bicrystalline GaN nanowires and their utilization for building high-performance optoelectronic nanodevices. The as-prepared UV-A photodetector based on individual bicrystalline GaN nanowire demonstrates a fast photoresponse time (144 ms), a high wavelength selectivity (UV-A light response only), an ultrahigh photoresponsivity of 1.74 × 107 A/W and EQE of 6.08 × 109%, a sensitivity of 2 × 104%, and a very large on/off ratio of more than two orders, as well as robust photocurrent stability (photocurrent fluctuation of less than 7% among 4000 s), showing predominant advantages in comparison with other peer semiconductor photodetectors. The outstanding optoelectronic performance of the bicrystalline GaN nanowire UV-A photodetector is further analyzed based on a detailed high-resolution transmission electron microscope (HRTEM) study, and the two separated crystal domains within the GaN nanowires are believed to provide separated and rapid carrier transfer channels. This work paves a solid way toward the integration of high-performance optoelectronic nanodevices based on bicrystalline or horizontally aligned one-dimensional semiconductor nanostructures.
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Affiliation(s)
- Xinglai Zhang
- Shenyang National Laboratory for Materials Science (SYNL), Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS) , No. 72 Wenhua Road, Shenyang 110016 China
| | - Baodan Liu
- Shenyang National Laboratory for Materials Science (SYNL), Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS) , No. 72 Wenhua Road, Shenyang 110016 China
| | - Qingyun Liu
- Shenyang National Laboratory for Materials Science (SYNL), Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS) , No. 72 Wenhua Road, Shenyang 110016 China
| | - Wenjin Yang
- Shenyang National Laboratory for Materials Science (SYNL), Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS) , No. 72 Wenhua Road, Shenyang 110016 China
| | - Changmin Xiong
- Department of Physics, Beijing Normal University , 100875, Beijing, P. R. China
| | - Jing Li
- Shenyang National Laboratory for Materials Science (SYNL), Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS) , No. 72 Wenhua Road, Shenyang 110016 China
| | - Xin Jiang
- Shenyang National Laboratory for Materials Science (SYNL), Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS) , No. 72 Wenhua Road, Shenyang 110016 China
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Liu XH, Yin PF, Kulinich SA, Zhou YZ, Mao J, Ling T, Du XW. Arrays of Ultrathin CdS Nanoflakes with High-Energy Surface for Efficient Gas Detection. ACS APPLIED MATERIALS & INTERFACES 2017; 9:602-609. [PMID: 27981834 DOI: 10.1021/acsami.6b13601] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
It is fascinating and challenging to endow conventional materials with unprecedented properties. For instance, cadmium sulfide (CdS) is an important semiconductor with excellent light response; however, its potential in gas-sensing was underestimated owing to relatively low chemical activity and poor electrical conductivity. Herein, we demonstrate that an ideal architecture, ultrathin nanoflake arrays (NFAs), can improve significantly gas-sensing properties of CdS material. The CdS NFAs are grown directly on the interdigitated electrode to expose large surface area. Their thickness is reduced below the double Debye length of CdS, permitting to achieve a full depletion of carriers. Particularly, the prepared CdS nanoflakes are enclosed with high-energy {0001} facets exposed, which provides more active sites for gas adsorption. Moreover, the NFAs exhibit the light-trapping effect, which further enhances their gas sensitivity. As a result, the as-prepared CdS NFAs demonstrate excellent gas-sensing and light-response properties, thus being capable of dual gas and light detection.
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Affiliation(s)
| | | | - Sergei A Kulinich
- Institute of Innovative Science and Technology, Tokai University , 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292, Japan
- Aston Institute of Photonic Technologies, Aston University , Aston Triangle, Birmingham B4 7ET, United Kingdom
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Lee DJ, Ilanchezhiyan P, Mohan Kumar G, Kwak DW, Woo YD, Kim DY, Kang TW. MWCNT/CdS nanobelt based hybrid structures and their enhanced photoelectrical performance. Chem Phys Lett 2017. [DOI: 10.1016/j.cplett.2016.11.039] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/20/2022]
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Xia F, Shao Z, He Y, Wang R, Wu X, Jiang T, Duhm S, Zhao J, Lee ST, Jie J. Surface Charge Transfer Doping via Transition Metal Oxides for Efficient p-Type Doping of II-VI Nanostructures. ACS NANO 2016; 10:10283-10293. [PMID: 27798826 DOI: 10.1021/acsnano.6b05884] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Wide band gap II-VI nanostructures are important building blocks for new-generation electronic and optoelectronic devices. However, the difficulty of realizing p-type conductivity in these materials via conventional doping methods has severely handicapped the fabrication of p-n homojunctions and complementary circuits, which are the fundamental components for high-performance devices. Herein, by using first-principles density functional theory calculations, we demonstrated a simple yet efficient way to achieve controlled p-type doping on II-VI nanostructures via surface charge transfer doping (SCTD) using high work function transition metal oxides such as MoO3, WO3, CrO3, and V2O5 as dopants. Our calculations revealed that these oxides were capable of drawing electrons from II-VI nanostructures, leading to accumulation of positive charges (holes injection) in the II-VI nanostructures. As a result, Fermi levels of the II-VI nanostructures were shifted toward the valence band regions after surface modifications, along with the large enhancement of work functions. In situ ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy characterizations verified the significant interfacial charge transfer between II-VI nanostructures and surface dopants. Both theoretical calculations and electrical transfer measurements on the II-VI nanostructure-based field-effect transistors clearly showed the p-type conductivity of the nanostructures after surface modifications. Strikingly, II-VI nanowires could undergo semiconductor-to-metal transition by further increasing the SCTD level. SCTD offers the possibility to create a variety of electronic and optoelectronic devices from the II-VI nanostructures via realization of complementary doping.
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Affiliation(s)
- Feifei Xia
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University , Suzhou 215123, Jiangsu, People's Republic of China
| | - Zhibin Shao
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University , Suzhou 215123, Jiangsu, People's Republic of China
| | - Yuanyuan He
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University , Suzhou 215123, Jiangsu, People's Republic of China
- Materials and Textile Engineering College, Jiaxing University , Jiaxing 314001, Zhejiang People's Republic of China
| | - Rongbin Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University , Suzhou 215123, Jiangsu, People's Republic of China
- Institut für Physik, Humboldt-Universität zu Berlin , 12489 Berlin, Germany
| | - Xiaofeng Wu
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University , Suzhou 215123, Jiangsu, People's Republic of China
| | - Tianhao Jiang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University , Suzhou 215123, Jiangsu, People's Republic of China
| | - Steffen Duhm
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University , Suzhou 215123, Jiangsu, People's Republic of China
| | - Jianwei Zhao
- Materials and Textile Engineering College, Jiaxing University , Jiaxing 314001, Zhejiang People's Republic of China
| | - Shuit-Tong Lee
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University , Suzhou 215123, Jiangsu, People's Republic of China
| | - Jiansheng Jie
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University , Suzhou 215123, Jiangsu, People's Republic of China
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CdS-Nanowires Flexible Photo-detector with Ag-Nanowires Electrode Based on Non-transfer Process. Sci Rep 2016; 6:21551. [PMID: 26899726 PMCID: PMC4761934 DOI: 10.1038/srep21551] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/06/2015] [Accepted: 01/26/2016] [Indexed: 11/21/2022] Open
Abstract
In this study, UV-visible flexible resistivity-type photo-detectors were demonstrated with CdS-nanowires (NWs) percolation network channel and Ag-NWs percolation network electrode. The devices were fabricated on Mixed Cellulose Esters (MCE) membrane using a lithographic filtration method combined with a facile non-transfer process. The photo-detectors demonstrated strong adhesion, fast response time, fast decay time, and high photo sensitivity. The high performance could be attributed to the high quality single crystalline CdS-NWs, encapsulation of NWs in MCE matrix and excellent interconnection of the NWs. Furthermore, the sensing performance was maintained even the device was bent at an angle of 90°. This research may pave the way for the facile fabrication of flexible photo-detectors with high performances.
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