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Wu R, Zhang H, Ma H, Zhao B, Li W, Chen Y, Liu J, Liang J, Qin Q, Qi W, Chen L, Li J, Li B, Duan X. Synthesis, Modulation, and Application of Two-Dimensional TMD Heterostructures. Chem Rev 2024. [PMID: 39189449 DOI: 10.1021/acs.chemrev.4c00174] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/28/2024]
Abstract
Two-dimensional (2D) transition metal dichalcogenide (TMD) heterostructures have attracted a lot of attention due to their rich material diversity and stack geometry, precise controllability of structure and properties, and potential practical applications. These heterostructures not only overcome the inherent limitations of individual materials but also enable the realization of new properties through appropriate combinations, establishing a platform to explore new physical and chemical properties at micro-nano-pico scales. In this review, we systematically summarize the latest research progress in the synthesis, modulation, and application of 2D TMD heterostructures. We first introduce the latest techniques for fabricating 2D TMD heterostructures, examining the rationale, mechanisms, advantages, and disadvantages of each strategy. Furthermore, we emphasize the importance of characteristic modulation in 2D TMD heterostructures and discuss some approaches to achieve novel functionalities. Then, we summarize the representative applications of 2D TMD heterostructures. Finally, we highlight the challenges and future perspectives in the synthesis and device fabrication of 2D TMD heterostructures and provide some feasible solutions.
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Affiliation(s)
- Ruixia Wu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Hongmei Zhang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Huifang Ma
- Innovation Center for Gallium Oxide Semiconductor (IC-GAO), National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- School of Flexible Electronics (Future Technologies) Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing 211816, China
| | - Bei Zhao
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing 211189, China
| | - Wei Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Yang Chen
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Jianteng Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Jingyi Liang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Qiuyin Qin
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Weixu Qi
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Liang Chen
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Jia Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Bo Li
- Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China
| | - Xidong Duan
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
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Elahi E, Ahmad M, Dahshan A, Rabeel M, Saleem S, Nguyen VH, Hegazy HH, Aftab S. Contemporary innovations in two-dimensional transition metal dichalcogenide-based P-N junctions for optoelectronics. NANOSCALE 2023; 16:14-43. [PMID: 38018395 DOI: 10.1039/d3nr04547a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/30/2023]
Abstract
Two-dimensional transition metal dichalcogenides (2D-TMDCs) with various physical characteristics have attracted significant interest from the scientific and industrial worlds in the years following Moore's law. The p-n junction is one of the earliest electrical components to be utilized in electronics and optoelectronics, and modern research on 2D materials has renewed interest in it. In this regard, device preparation and application have evolved substantially in this decade. 2D TMDCs provide unprecedented flexibility in the construction of innovative p-n junction device designs, which is not achievable with traditional bulk semiconductors. It has been investigated using 2D TMDCs for various junctions, including homojunctions, heterojunctions, P-I-N junctions, and broken gap junctions. To achieve high-performance p-n junctions, several issues still need to be resolved, such as developing 2D TMDCs of superior quality, raising the rectification ratio and quantum efficiency, and successfully separating the photogenerated electron-hole pairs, among other things. This review comprehensively details the various 2D-based p-n junction geometries investigated with an emphasis on 2D junctions. We investigated the 2D p-n junctions utilized in current rectifiers and photodetectors. To make a comparison of various devices easier, important optoelectronic and electronic features are presented. We thoroughly assessed the review's prospects and challenges for this emerging field of study. This study will serve as a roadmap for more real-world photodetection technology applications.
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Affiliation(s)
- Ehsan Elahi
- Department of Physics & Astronomy and Graphene Research Institute, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul 05006, South Korea.
| | - Muneeb Ahmad
- Department of Electrical Engineering and Convergence Engineering for Intelligent Drone, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul 05006, South Korea
| | - A Dahshan
- Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia
| | - Muhammad Rabeel
- Department of Electrical Engineering and Convergence Engineering for Intelligent Drone, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul 05006, South Korea
| | - Sidra Saleem
- Division of Science Education, Department of Energy Storage/Conversion Engineering for Graduate School, Jeonbuk National University, Jeonju, Jeonbuk 54896, Republic of Korea
| | - Van Huy Nguyen
- Department of Nanotechnology and Advanced Materials Engineering, and H.M.C., Sejong University, Seoul 05006, South Korea
| | - H H Hegazy
- Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia
- Research Centre for Advanced Materials Science (RCAMS), King Khalid University, P. O. Box 9004, Abha 61413, Saudi Arabia
| | - Sikandar Aftab
- Department of Intelligent Mechatronics Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul, 05006 South Korea.
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3
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Zhang L, Wei Z, Wang X, Zhang L, Wang Y, Xie C, Han T, Li F, Luo W, Zhao D, Long M, Shan L. Ultrahigh-Sensitivity and Fast-Speed Solar-Blind Ultraviolet Photodetector Based on a Broken-Gap van der Waals Heterodiode. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 36913956 DOI: 10.1021/acsami.2c20546] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Broad-bandgap semiconductor-based solar-blind ultraviolet (SBUV) photodetectors have attracted considerable research interest because of their broad applications in missile plume tracking, flame detectors, environmental monitoring, and optical communications due to their solar-blind nature and high sensitivity with low background radiation. Owing to its high light absorption coefficient, abundance, and wide tunable bandgap of 2-2.6 eV, tin disulfide (SnS2) has emerged as one of the most promising compounds for application in UV-visible optoelectronic devices. However, SnS2 UV detectors have some undesirable properties such as slow response speed, high current noise level, and low specific detectivity. This study reports a metal mirror-enhanced Ta0.01W0.99Se2/SnS2 (TWS) van der Waals heterodiode-based SBUV photodetector with an ultrahigh photoresponsivity (R) of ∼1.85 × 104 AW-1 and a fast speed with rising time (τr) of 3.3 μs and decay time (τd) of 3.4 μs. Notably, the TWS heterodiode device exhibits a significantly low noise equivalent power of ∼1.02 × 10-18 W Hz-1/2 and a high specific detectivity of ∼3.65 × 1014 cm Hz1/2 W-1. This study provides an alternative method for designing fast-speed SBUV photodetectors with enormous potential in applications.
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Affiliation(s)
- Li Zhang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei 230601, China
| | - Zhenhua Wei
- College of Science, National University of Defense Technology, Changsha 410073, China
| | - Xiuxiu Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei 230601, China
| | - Luoyu Zhang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei 230601, China
| | - Yi Wang
- Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits, Anhui University, 111 Jiu Long Road, Hefei 230601, China
| | - Chao Xie
- Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits, Anhui University, 111 Jiu Long Road, Hefei 230601, China
| | - Tao Han
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei 230601, China
| | - Feng Li
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei 230601, China
| | - Wei Luo
- College of Science, National University of Defense Technology, Changsha 410073, China
| | - Dongxu Zhao
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 3888 Dongnanhu Road, Changchun 130021, China
| | - Mingsheng Long
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei 230601, China
| | - Lei Shan
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei 230601, China
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Babar ZUD, Raza A, Cassinese A, Iannotti V. Two Dimensional Heterostructures for Optoelectronics: Current Status and Future Perspective. Molecules 2023; 28:molecules28052275. [PMID: 36903520 PMCID: PMC10005545 DOI: 10.3390/molecules28052275] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/31/2022] [Revised: 02/05/2023] [Accepted: 02/16/2023] [Indexed: 03/05/2023] Open
Abstract
Researchers have found various families of two-dimensional (2D) materials and associated heterostructures through detailed theoretical work and experimental efforts. Such primitive studies provide a framework to investigate novel physical/chemical characteristics and technological aspects from micro to nano and pico scale. Two-dimensional van der Waals (vdW) materials and their heterostructures can be obtained to enable high-frequency broadband through a sophisticated combination of stacking order, orientation, and interlayer interactions. These heterostructures have been the focus of much recent research due to their potential applications in optoelectronics. Growing the layers of one kind of 2D material over the other, controlling absorption spectra via external bias, and external doping proposes an additional degree of freedom to modulate the properties of such materials. This mini review focuses on current state-of-the-art material design, manufacturing techniques, and strategies to design novel heterostructures. In addition to a discussion of fabrication techniques, it includes a comprehensive analysis of the electrical and optical properties of vdW heterostructures (vdWHs), particularly emphasizing the energy-band alignment. In the following sections, we discuss specific optoelectronic devices, such as light-emitting diodes (LEDs), photovoltaics, acoustic cavities, and biomedical photodetectors. Furthermore, this also includes a discussion of four different 2D-based photodetector configurations according to their stacking order. Moreover, we discuss the challenges that remain to be addressed in order to realize the full potential of these materials for optoelectronics applications. Finally, as future perspectives, we present some key directions and express our subjective assessment of upcoming trends in the field.
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Affiliation(s)
- Zaheer Ud Din Babar
- Scuola Superiore Meridionale (SSM), University of Naples Federico II, Largo S. Marcellino 10, 80138 Naples, Italy
- Department of Physics “Ettore Pancini”, University of Naples Federico II, Piazzale Tecchio 80, 80125 Naples, Italy
| | - Ali Raza
- Department of Physics “Ettore Pancini”, University of Naples Federico II, Piazzale Tecchio 80, 80125 Naples, Italy
| | - Antonio Cassinese
- Department of Physics “Ettore Pancini”, University of Naples Federico II, Piazzale Tecchio 80, 80125 Naples, Italy
- CNR–SPIN (Institute for Superconductors, Oxides and Other Innovative Materials and Devices), Piazzale V. Tecchio 80, 80125 Naples, Italy
| | - Vincenzo Iannotti
- Department of Physics “Ettore Pancini”, University of Naples Federico II, Piazzale Tecchio 80, 80125 Naples, Italy
- CNR–SPIN (Institute for Superconductors, Oxides and Other Innovative Materials and Devices), Piazzale V. Tecchio 80, 80125 Naples, Italy
- Correspondence:
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Iordanidou K, Mitra R, Shetty N, Lara-Avila S, Dash S, Kubatkin S, Wiktor J. Electric Field and Strain Tuning of 2D Semiconductor van der Waals Heterostructures for Tunnel Field-Effect Transistors. ACS APPLIED MATERIALS & INTERFACES 2023; 15:1762-1771. [PMID: 36537996 PMCID: PMC9837817 DOI: 10.1021/acsami.2c13151] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/22/2022] [Accepted: 11/21/2022] [Indexed: 06/17/2023]
Abstract
Heterostacks consisting of low-dimensional materials are attractive candidates for future electronic nanodevices in the post-silicon era. In this paper, using first-principles calculations based on density functional theory (DFT), we explore the structural and electronic properties of MoTe2/ZrS2 heterostructures with various stacking patterns and thicknesses. Our simulations show that the valence band (VB) edge of MoTe2 is almost aligned with the conduction band (CB) edge of ZrS2, and (MoTe2)m/(ZrS2)m (m = 1, 2) heterostructures exhibit the long-sought broken gap band alignment, which is pivotal for realizing tunneling transistors. Electrons are found to spontaneously flow from MoTe2 to ZrS2, and the system resembles an ultrascaled parallel plate capacitor with an intrinsic electric field pointed from MoTe2 to ZrS2. The effects of strain and external electric fields on the electronic properties are also investigated. For vertical compressive strains, the charge transfer increases due to the decreased coupling between the layers, whereas tensile strains lead to the opposite behavior. For negative electric fields a transition from the type-III to the type-II band alignment is induced. In contrast, by increasing the positive electric fields, a larger overlap between the valence and conduction bands is observed, leading to a larger band-to-band tunneling (BTBT) current. Low-strained heterostructures with various rotation angles between the constituent layers are also considered. We find only small variations in the energies of the VB and CB edges with respect to the Fermi level, for different rotation angles up to 30°. Overall, our simulations offer insights into the fundamental properties of low-dimensional heterostructures and pave the way for their future application in energy-efficient electronic nanodevices.
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Affiliation(s)
| | - Richa Mitra
- Department
of Microtechnology and Nanoscience, Chalmers
University of Technology, SE-412 96Gothenburg, Sweden
| | - Naveen Shetty
- Department
of Microtechnology and Nanoscience, Chalmers
University of Technology, SE-412 96Gothenburg, Sweden
| | - Samuel Lara-Avila
- Department
of Microtechnology and Nanoscience, Chalmers
University of Technology, SE-412 96Gothenburg, Sweden
| | - Saroj Dash
- Department
of Microtechnology and Nanoscience, Chalmers
University of Technology, SE-412 96Gothenburg, Sweden
| | - Sergey Kubatkin
- Department
of Microtechnology and Nanoscience, Chalmers
University of Technology, SE-412 96Gothenburg, Sweden
| | - Julia Wiktor
- Department
of Physics, Chalmers University of Technology, SE-412 96Gothenburg, Sweden
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6
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Li X, Yuan P, He M, Li L, Du J, Xiong W, Xia C, Kou L. Optoelectronic properties and applications of two-dimensional layered semiconductor van der Waals heterostructures: perspective from theory. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 35:043001. [PMID: 36541492 DOI: 10.1088/1361-648x/aca5db] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2021] [Accepted: 11/24/2022] [Indexed: 06/17/2023]
Abstract
Van der Waals heterostructures (vdWHs) which combine two different materials together have attracted extensive research attentions due to the promising applications in optoelectronic and electronic devices, the investigations from theoretical simulations can not only predict the novel properties and the interfacial coupling, but also provide essential guidance for experimental verification and fabrications. This review summarizes the recent theoretical studies on electronic and optical properties of two-dimensional semiconducting vdWHs. The characteristics of different band alignments are discussed, together with the optoelectronic modulations from external fields and the promising applications in solar cells, tunneling field-effect transistors and photodetectors. At the end of the review, the further perspective and possible research problems of the vdWHs are also presented.
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Affiliation(s)
- Xueping Li
- College of Electronic and Electrical Engineering, Henan Normal University, Xinxiang, Henan 453007, People's Republic of China
- College of Physics, Henan Normal University, Xinxiang, Henan 453007, People's Republic of China
| | - Peize Yuan
- College of Electronic and Electrical Engineering, Henan Normal University, Xinxiang, Henan 453007, People's Republic of China
| | - Mengjie He
- College of Physics, Henan Normal University, Xinxiang, Henan 453007, People's Republic of China
| | - Lin Li
- College of Physics, Henan Normal University, Xinxiang, Henan 453007, People's Republic of China
| | - Juan Du
- College of Physics, Henan Normal University, Xinxiang, Henan 453007, People's Republic of China
| | - Wenqi Xiong
- College of Physics, Henan Normal University, Xinxiang, Henan 453007, People's Republic of China
| | - Congxin Xia
- College of Physics, Henan Normal University, Xinxiang, Henan 453007, People's Republic of China
| | - Liangzhi Kou
- School of Mechanical, Medical and Process Engineering, Queensland University of Technology, Brisbane, QLD 4001 Australia
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Velpandian M, Ummethala G, Malladi SK, Meduri P. Heterostructures of tin and tungsten selenides for robust overall water splitting. J Colloid Interface Sci 2022; 623:561-573. [PMID: 35598485 DOI: 10.1016/j.jcis.2022.05.052] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/08/2022] [Revised: 05/01/2022] [Accepted: 05/08/2022] [Indexed: 10/18/2022]
Abstract
Layered transition metal selenides have garnered increased attention in recent times as non-noble metal bifunctional electrocatalysts for electrochemical water splitting. Tungsten diselenide @ tin diselenide heterostructures in the present study significantly increase the electrochemical performance of oxygen evolution reaction with a low overpotential of 250 mV at 10 mA cm-2 and high stability for 16 h (8.9 % loss), hydrogen evolution reaction with a low overpotential of 180 mV at 10 mA cm-2 with a 21.9% loss in 16 h. The overall water splitting using a lab-size electrolyzer shows a low cell voltage (1.52 V @ 10 mA cm-2) and high durability for 50 h (15.2% loss @ 10 mA cm-2 and 4.4% loss @ 50 mA cm-2). As a result, the heterostructures have demonstrated their ability to handle multiple challenges in energy conversion systems due to their unique properties.
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Affiliation(s)
- Muthuraja Velpandian
- Department of Chemical Engineering, Indian Institute of Technology Hyderabad, Kandi, Sangareddy 502285, Telangana, India
| | - Govind Ummethala
- Department of Materials Science and Metallurgical Engineering, Indian Institute of Technology Hyderabad, Kandi, Sangareddy 502285, Telangana, India
| | - Sairam K Malladi
- Department of Materials Science and Metallurgical Engineering, Indian Institute of Technology Hyderabad, Kandi, Sangareddy 502285, Telangana, India
| | - Praveen Meduri
- Department of Chemical Engineering, Indian Institute of Technology Hyderabad, Kandi, Sangareddy 502285, Telangana, India.
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Konar R, Rajeswaran B, Paul A, Teblum E, Aviv H, Perelshtein I, Grinberg I, Tischler YR, Nessim GD. CVD-Assisted Synthesis of 2D Layered MoSe 2 on Mo Foil and Low Frequency Raman Scattering of Its Exfoliated Few-Layer Nanosheets on CaF 2 Substrates. ACS OMEGA 2022; 7:4121-4134. [PMID: 35155906 PMCID: PMC8829917 DOI: 10.1021/acsomega.1c05652] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/10/2021] [Accepted: 01/04/2022] [Indexed: 06/14/2023]
Abstract
Transition-metal dichalcogenides (TMDCs) are unique layered materials with exotic properties. So, examining their structures holds tremendous importance. 2H-MoSe2 (analogous to MoS2; Gr. 6 TMDC) is a crucial optoelectronic material studied extensively using Raman spectroscopy. In this regard, low-frequency Raman (LFR) spectroscopy can probe this material's structure as it reveals distinct vibration modes. Here, we focus on understanding the microstructural evolution of different 2H-MoSe2 morphologies and their layers using LFR scattering. We grew phase-pure 2H-MoSe2 (with variable microstructures) directly on a Mo foil using a two-furnace ambient-pressure chemical vapor deposition (CVD) system by carefully controlling the process parameters. We analyzed the layers of exfoliated flakes after ultrasonication and drop-cast 2H-MoSe2 of different layer thicknesses by choosing different concentrations of 2H-MoSe2 solutions. Further detailed analyses of the respective LFR regions confirm the presence of newly identified Raman signals for the 2H-MoSe2 nanosheets drop-cast on Raman-grade CaF2. Our results show that CaF2 is an appropriate Raman-enhancing substrate compared to Si/SiO2 as it presents new LFR modes of 2H-MoSe2. Therefore, CaF2 substrates are a promising medium to characterize in detail other TMDCs using LFR spectroscopy.
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9
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Lu Y, Chen T, Mkhize N, Chang RJ, Sheng Y, Holdway P, Bhaskaran H, Warner JH. GaS:WS 2 Heterojunctions for Ultrathin Two-Dimensional Photodetectors with Large Linear Dynamic Range across Broad Wavelengths. ACS NANO 2021; 15:19570-19580. [PMID: 34860494 DOI: 10.1021/acsnano.1c06587] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) photodetectors based on photovoltaic effect or photogating effect can hardly achieve both high photoresponsivity and large linear dynamic range at the same time, which greatly limits many practical applications such as imaging sensors. Here, the conductive-sensitizer strategy, a general design for improving photoresponsivity and linear dynamic range in 2D photodetectors is provided and experimentally demonstrated on vertically stacked bilayer WS2/GaS0.87 under a parallel circuit mode. Owing to successful band alignment engineering, the isotype type-II heterojunction enables efficient charge carrier transfer from WS2, the high-mobility sensitizer, to GaS0.87, the low-mobility channel, under illumination from a broad visible spectrum. The transferred electron charges introduce a reverse electric field which efficiently lowers the band offset between the two materials, facilitating a transition from low-mobility photocarrier transport to high-mobility photocarrier transport with increasing illumination power. We achieved a large linear dynamic range of 73 dB as well as a high and constant photoresponsivity of 13 A/W under green light. X-ray photoelectron spectroscopy, cathodoluminescence, and Kelvin probe force microscopy further identify the key role of defects in monolayer GaS0.87 in engineering the band alignment with monolayer WS2. This work proposes a design route based on band and interface modulation for improving performance of 2D photodetectors and provides deep insights into the important role of strong interlayer coupling in offering heterostructures with desired properties and functions.
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Affiliation(s)
- Yang Lu
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Tongxin Chen
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Nhlakanipho Mkhize
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Ren-Jie Chang
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Yuewen Sheng
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Philip Holdway
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Harish Bhaskaran
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Jamie H Warner
- Walker Department of Mechanical Engineering, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, Texas 78712, United States
- Materials Graduate Program, Texas Materials Institute, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, Texas 78712, United States
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10
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Sun Y, Hu R, An C, Ma X, Zhang J, Liu J. Visible to near-infrared photodetector based on SnSe 2/WSe 2heterojunction with potential application in artificial visual neuron. NANOTECHNOLOGY 2021; 32:475206. [PMID: 34375957 DOI: 10.1088/1361-6528/ac1c26] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/07/2021] [Accepted: 08/09/2021] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2d) transition-metal dichalcogenides (TMDCs) are promising candidate materials for developing next generation nano optoelectronic devices, due to their strong interaction with light. In addition, the free of surface dangling bonds makes it possible to stacking any different types of 2D TMDCs together to form heterojunctions with desirable band structures for various applications. However, most of the 2D TMDCs are bipolar or strong unipolar n-type doped, while very few of them show weak p-type doping, which severely affects the performance of the formed heterojunctions. In this work, we fabricated a SnSe2/WSe2heterojunction of type II band alignment with a small bandgap of ∼0.1 eV, which is ideally for developing optoelectronic devices responsible to a broad light spectrum. N2O plasma treatment is applied to enhance the p-type doping of both WSe2and SnSe2, which results in the increased on-off ratio of n-type SnSe2by 50 times and the hole mobility of WSe2by 527 times. The WSe2/SnSe2heterostructure also achieves a decent performance as a p-n junction, which exhibits photo responsivity of 450 mA W-1and 133 mA W-1for 700 nm visible light and 1600 nm infrared light, respectively, without any gate or source-drain bias, showing great photovoltaic effect. Moreover, the heterojunction shows great promise as an artificial visual neuron, which can differentiate the dark, visible and infrared light illumination conditions by applying a series of electrical pulses through the back-gate electrode.
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Affiliation(s)
- Yang Sun
- State Key Laboratory of Precision Measurement Technology and Instrument, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Ruixue Hu
- State Key Laboratory of Precision Measurement Technology and Instrument, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Chunhua An
- State Key Laboratory of Precision Measurement Technology and Instrument, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Xinli Ma
- State Key Laboratory of Precision Measurement Technology and Instrument, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Jing Zhang
- State Key Laboratory of Precision Measurement Technology and Instrument, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Jing Liu
- State Key Laboratory of Precision Measurement Technology and Instrument, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
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11
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Gbadamasi S, Mohiuddin M, Krishnamurthi V, Verma R, Khan MW, Pathak S, Kalantar-Zadeh K, Mahmood N. Interface chemistry of two-dimensional heterostructures - fundamentals to applications. Chem Soc Rev 2021; 50:4684-4729. [PMID: 33621294 DOI: 10.1039/d0cs01070g] [Citation(s) in RCA: 50] [Impact Index Per Article: 16.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/27/2023]
Abstract
Two-dimensional heterostructures (2D HSs) have emerged as a new class of materials where dissimilar 2D materials are combined to synergise their advantages and alleviate shortcomings. Such a combination of dissimilar components into 2D HSs offers fascinating properties and intriguing functionalities attributed to the newly formed heterointerface of constituent components. Understanding the nature of the surface and the complex heterointerface of HSs at the atomic level is crucial for realising the desired properties, designing innovative 2D HSs, and ultimately unlocking their full potential for practical applications. Therefore, this review provides the recent progress in the field of 2D HSs with a focus on the discussion of the fundamentals and the chemistry of heterointerfaces based on van der Waals (vdW) and covalent interactions. It also explains the challenges associated with the scalable synthesis and introduces possible methodologies to produce large quantities with good control over the heterointerface. Subsequently, it highlights the specialised characterisation techniques to reveal the heterointerface formation, chemistry and nature. Afterwards, we give an overview of the role of 2D HSs in various emerging applications, particularly in high-power batteries, bifunctional catalysts, electronics, and sensors. In the end, we present conclusions with the possible solutions to the associated challenges with the heterointerfaces and potential opportunities that can be adopted for innovative applications.
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12
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Pandit B, Agarwal A, Patel P, Sankapal BR. The electrochemical kinetics of cerium selenide nano-pebbles: the design of a device-grade symmetric configured wide-potential flexible solid-state supercapacitor. NANOSCALE ADVANCES 2021; 3:1057-1066. [PMID: 36133291 PMCID: PMC9417937 DOI: 10.1039/d0na00893a] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/24/2020] [Accepted: 12/20/2020] [Indexed: 06/14/2023]
Abstract
Next-generation portable flexible electronic appliances require liquid-free energy storage supercapacitor devices to eliminate leakage and to support mechanical bending that is compatible with roll-to-roll technologies. Hence, a state-of-the-art process is presented to design a solid-state, wide-potential and flexible supercapacitor through the use of nano-pebbles of cerium selenide via a simple successive ionic layer adsorption and reaction (SILAR) method that could allow an industry scalable route. We strongly believe that this is the first approach amongst physical and chemical routes not only for synthesizing cerium selenide in thin-film form but also using it for device-grade supercapacitor applications. The designed solid-state symmetric supercapacitor assembled from cerium selenide electrodes sandwiched by PVA-LiClO4 gel electrolyte attains a wide potential window of 1.8 V with capacitance of 48.8 F g-1 at 2 mV s-1 and reveals excellent power density of 4.89 kW kg-1 at an energy density of 11.63 W h kg-1. The formed device is capable of 87% capacitive retention even at a mechanical bending angle of 175°. Lighting up a strip of 21 parallel connected red LEDs clearly demonstrates the practical use of the designed symmetric solid-state supercapacitor, aiming towards the commercialization of the product in the future.
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Affiliation(s)
- Bidhan Pandit
- Nano Materials and Device Laboratory, Department of Physics, Visvesvaraya National Institute of Technology South Ambazari Road Nagpur 440010 Maharashtra India +91 712 2223230 +91 712 2801170
- Institut Charles Gerhardt Montpellier (ICGM), Université de Montpellier, CNRS Place Eugène Bataillon Montpellier 34095, Cedex 5 France
| | - Akanksha Agarwal
- Nano Materials and Device Laboratory, Department of Physics, Visvesvaraya National Institute of Technology South Ambazari Road Nagpur 440010 Maharashtra India +91 712 2223230 +91 712 2801170
| | - Priyanka Patel
- Nano Materials and Device Laboratory, Department of Physics, Visvesvaraya National Institute of Technology South Ambazari Road Nagpur 440010 Maharashtra India +91 712 2223230 +91 712 2801170
| | - Babasaheb R Sankapal
- Nano Materials and Device Laboratory, Department of Physics, Visvesvaraya National Institute of Technology South Ambazari Road Nagpur 440010 Maharashtra India +91 712 2223230 +91 712 2801170
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13
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Abraham N, Murali K, Watanabe K, Taniguchi T, Majumdar K. Astability versus Bistability in van der Waals Tunnel Diode for Voltage Controlled Oscillator and Memory Applications. ACS NANO 2020; 14:15678-15687. [PMID: 33091295 DOI: 10.1021/acsnano.0c06630] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
van der Waals (vdW) tunnel junctions are attractive because of their atomically sharp interface, gate tunability, and robustness against lattice mismatch between the successive layers. However, the negative differential resistance (NDR) demonstrated in this class of tunnel diodes often exhibits noisy behavior with low peak current density and lacks robustness and repeatability, limiting their practical circuit applications. Here, we propose a strategy of using a 1L-WS2 as an optimum tunnel barrier sandwiched in a broken gap tunnel junction of highly doped black phosphorus (BP) and SnSe2. We achieve high yield tunnel diodes exhibiting highly repeatable, ultraclean, and gate-tunable NDR characteristics with a signature of intrinsic oscillation, and a large peak-to-valley current ratio (PVCR) of 3.6 at 300 K (4.6 at 7 K), making them suitable for practical applications. We show that the thermodynamic stability of the vdW tunnel diode circuit can be tuned from astability to bistability by altering the constraint through choosing a voltage or a current bias, respectively. In the astable mode under voltage bias, we demonstrate a compact, voltage-controlled oscillator without the need for an external tank circuit. In the bistable mode under current bias, we demonstrate a highly scalable, single-element, one-bit memory cell that is promising for dense random access memory applications in memory intensive computation architectures.
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Affiliation(s)
- Nithin Abraham
- Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India
| | - Krishna Murali
- Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kausik Majumdar
- Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India
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14
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An B, Ma Y, Zhang G, You C, Zhang Y. Controlled synthesis of few-layer SnSe 2 by chemical vapor deposition. RSC Adv 2020; 10:42157-42163. [PMID: 35516786 PMCID: PMC9057842 DOI: 10.1039/d0ra08360g] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/30/2020] [Accepted: 11/13/2020] [Indexed: 11/24/2022] Open
Abstract
Few-layer SnSe2 has intrinsic low thermal conductivity and unique phase transition from amorphous to crystalline state under laser irradiation. It has been extensively used in the fields of thermoelectric conversion and information storage. However, the traditional precursors like tin oxide and organic compounds have either high melting points or complex compositions, and the improper deposition temperature of the substrate may lead to mixed products, which impedes controllable synthesis of high-quality few-layer SnSe2. Here, we propose a chemical vapor deposition (CVD) method, in which the precursor evaporation and deposition have been controlled via the adjustment of precursors/substrate positions, which effectively avoided mixed product growth, thus achieving the growth of high-quality few-layer SnSe2. The calculated first-order temperature coefficient of the A1g module is −0.01549 cm−1 K−1, which is superior to other two-dimensional (2D) materials. Meanwhile, two exciton emissions from few-layer SnSe2 have been found, for which the higher energy one (1.74 eV) has been assigned to near-band-gap emission, while the lower one (1.61 eV) may have roots in the surface state of SnSe2. The few-layer SnSe2 also exhibits large exciton binding energies (0.195 and 0.177 eV), which are greater than those of common semiconductors and may contribute to stability of excitons, showing broad application prospects in the field of optoelectronics. Few-layer SnSe2 has intrinsic low thermal conductivity and unique phase transition from amorphous to crystalline state under laser irradiation.![]()
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Affiliation(s)
- Boxing An
- Faculty of Materials and Manufacturing, Beijing University of Technology Beijing 100124 China .,The Key Laboratory of Advanced Functional Materials, Ministry of Education of China Beijing 100124 China
| | - Yang Ma
- Faculty of Materials and Manufacturing, Beijing University of Technology Beijing 100124 China .,The Key Laboratory of Advanced Functional Materials, Ministry of Education of China Beijing 100124 China
| | - Guoqing Zhang
- Faculty of Materials and Manufacturing, Beijing University of Technology Beijing 100124 China .,Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology Beijing 100124 China
| | - Congya You
- Faculty of Materials and Manufacturing, Beijing University of Technology Beijing 100124 China .,The Key Laboratory of Advanced Functional Materials, Ministry of Education of China Beijing 100124 China
| | - Yongzhe Zhang
- Faculty of Materials and Manufacturing, Beijing University of Technology Beijing 100124 China .,The Key Laboratory of Advanced Functional Materials, Ministry of Education of China Beijing 100124 China
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15
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Mao Y, Ma X, Wu D, Lin C, Shan H, Wu X, Zhao J, Zhao A, Wang B. Interfacial Polarons in van der Waals Heterojunction of Monolayer SnSe 2 on SrTiO 3 (001). NANO LETTERS 2020; 20:8067-8073. [PMID: 33044080 DOI: 10.1021/acs.nanolett.0c02741] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Interfacial polarons have been demonstrated to play important roles in heterostructures containing polar substrates. However, most of polarons found so far are diffusive large polarons; the discovery and investigation of small polarons at interfaces are scarce. Herein, we report the emergence of interfacial polarons in monolayer SnSe2 epitaxially grown on Nb-doped SrTiO3 (STO) surface using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM). ARPES spectra taken on this heterointerface reveal a nearly flat in-gap band correlated with a significant charge modulation in real space as observed with STM. An interfacial polaronic model is proposed to ascribe this in-gap band to the formation of self-trapped small polarons induced by charge accumulation and electron-phonon coupling at the van der Waals interface of SnSe2 and STO. Such a mechanism to form interfacial polaron is expected to generally exist in similar van der Waals heterojunctions consisting of layered 2D materials and polar substrates.
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Affiliation(s)
- Yahui Mao
- Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xiaochuan Ma
- Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Daoxiong Wu
- CAS Key Laboratory of Materials for Energy Conservation, CAS Center for Excellence in Nanoscience, and Department of Material Science and Engineering, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Chen Lin
- Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Huan Shan
- Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xiaojun Wu
- Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- CAS Key Laboratory of Materials for Energy Conservation, CAS Center for Excellence in Nanoscience, and Department of Material Science and Engineering, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Jin Zhao
- Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- ICQD and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Aidi Zhao
- Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Bing Wang
- Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
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16
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Tunable Electronic Properties of Type-II SiS 2/WSe 2 Hetero-Bilayers. NANOMATERIALS 2020; 10:nano10102037. [PMID: 33076468 PMCID: PMC7602600 DOI: 10.3390/nano10102037] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/25/2020] [Revised: 10/12/2020] [Accepted: 10/13/2020] [Indexed: 11/16/2022]
Abstract
First-principle calculations based on the density functional theory (DFT) are implemented to study the structural and electronic properties of the SiS2/WSe2 hetero-bilayers. It is found that the AB-2 stacking model is most stable among all the six SiS2/WSe2 heterostructures considered in this work. The AB-2 stacking SiS2/WSe2 hetero-bilayer possesses a type-II band alignment with a narrow indirect band gap (0.154 eV and 0.738 eV obtained by GGA-PBE and HSE06, respectively), which can effectively separate the photogenerated electron–hole pairs and prevent the recombination of the electron–hole pairs. Our results revealed that the band gap can be tuned effectively within the range of elastic deformation (biaxial strain range from −7% to 7%) while maintaining the type-II band alignment. Furthermore, due to the effective regulation of interlayer charge transfer, the band gap along with the band offset of the SiS2/WSe2 heterostructure can also be modulated effectively by applying a vertical external electric field. Our results offer interesting alternatives for the engineering of two-dimensional material-based optoelectronic nanodevices.
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17
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Lee J, Duong NT, Bang S, Park C, Nguyen DA, Jeon H, Jang J, Oh HM, Jeong MS. Modulation of Junction Modes in SnSe 2/MoTe 2 Broken-Gap van der Waals Heterostructure for Multifunctional Devices. NANO LETTERS 2020; 20:2370-2377. [PMID: 32031411 DOI: 10.1021/acs.nanolett.9b04926] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
We study the electronic and optoelectronic properties of a broken-gap heterojunction composed of SnSe2 and MoTe2 with gate-controlled junction modes. Owing to the interband tunneling current, our device can act as an Esaki diode and a backward diode with a peak-to-valley current ratio approaching 5.7 at room temperature. Furthermore, under an 811 nm laser irradiation the heterostructure exhibits a photodetectivity of up to 7.5 × 1012 Jones. In addition, to harness the electrostatic gate bias, Voc can be tuned from negative to positive by switching from the accumulation mode to the depletion mode of the heterojunction. Additionally, a photovoltaic effect with a fill factor exceeding 41% was observed, which highlights the significant potential for optoelectronic applications. This study not only demonstrates high-performance multifunctional optoelectronics based on the SnSe2/MoTe2 heterostructure but also provides a comprehensive understanding of broken-band alignment and its applications.
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Affiliation(s)
- Juchan Lee
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Ngoc Thanh Duong
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Seungho Bang
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Chulho Park
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Duc Anh Nguyen
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Hobeom Jeon
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jiseong Jang
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Hye Min Oh
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Mun Seok Jeong
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
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18
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Vergnaud C, Dau MT, Grévin B, Licitra C, Marty A, Okuno H, Jamet M. New approach for the molecular beam epitaxy growth of scalable WSe 2 monolayers. NANOTECHNOLOGY 2020; 31:255602. [PMID: 32187582 DOI: 10.1088/1361-6528/ab80fe] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The search for high-quality transition metal dichalcogenides mono- and multi-layers grown on large areas is still a very active field of investigation. Here, we use molecular beam epitaxy to grow WSe2 on 15 × 15 mm large mica in the van der Waals regime. By screening one-step growth conditions, we find that very high temperature (>900 °C) and very low deposition rate (<0.15 Å min-1) are necessary to obtain high quality WSe2 films. The domain size can be as large as 1 µm and the in-plane rotational misorientation of 1.25°. The WSe2 monolayer is also robust against air exposure, can be easily transferred over 1 cm2 on SiN/SiO2 and exhibits strong photoluminescence signal. Moreover, by combining grazing incidence x-ray diffraction and transmission electron microscopy, we could detect the presence of few misoriented grains. A two-dimensional model based on atomic coincidences between the WSe2 and mica crystals allows us to explain the formation of these misoriented grains and gives insight to achieve highly crystalline WSe2.
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Affiliation(s)
- Céline Vergnaud
- Univ. Grenoble Alpes, CEA, CNRS, Grenoble INP, IRIG-Spintec, 38000 Grenoble, France
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19
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Wang C, Yang H, Wang Q, Qiao L, Peng X, Li J, Han J, Wang Q, Li X, Wang Z, Duan J, Xiao W. Controllable growth of two-dimensional SnSe 2 flakes with screw dislocations and fractal structures. CrystEngComm 2020. [DOI: 10.1039/d0ce00819b] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/15/2023]
Abstract
We report on the controllable synthesis of 2D SnSe2 flakes with screw dislocations and fractal structures on mica and graphite substrates using a molecular beam epitaxy technique.
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20
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Wang Y, Liu T, Tian W, Zhang Y, Shan P, Chen Y, Wei W, Yuan H, Cui H. Mechanism for hydrogen evolution from water splitting based on a MoS2/WSe2 heterojunction photocatalyst: a first-principle study. RSC Adv 2020; 10:41127-41136. [PMID: 35519202 PMCID: PMC9057806 DOI: 10.1039/d0ra06939f] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/12/2020] [Accepted: 11/05/2020] [Indexed: 12/26/2022] Open
Abstract
In this study, density functional theory and hybrid functional theory are used to calculate the work function and energy band structure of MoS2 and WSe2, as well as the binding energy, work function, energy band structure, density of states, charge density difference, energy band alignment, Bader charge, and H adsorption free energy of MoS2/WSe2. The difference in work function led to the formation of a built-in electric field from WSe2 to MoS2, and the energy band alignment indicated that the redox reactions were located on the MoS2 and WSe2 semiconductors, respectively. The binding energy of MoS2 and WSe2 indicated that the thermodynamic properties of the heterogeneous structure were stable. MoS2 and WSe2 gathered electrons and holes, respectively, and redistributed them under the action of the built-in electric field. The photogenerated electrons and holes were enriched on the surface of WSe2 and MoS2, which greatly improved the efficiency of hydrogen production by photocatalytic water splitting. The mechanism of heterojunction photocatalytic splitting of water for hydrogen evolution.![]()
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Affiliation(s)
- Yazhou Wang
- School of Mechanical Engineering
- Shaanxi University of Technology
- Hanzhong
- China
- Shaanxi Key Laboratory of Industrial Automation
| | - Tong Liu
- School of Mechanical Engineering
- Shaanxi University of Technology
- Hanzhong
- China
- Shaanxi Key Laboratory of Industrial Automation
| | - Weizhi Tian
- School of Mechanical Engineering
- Shaanxi University of Technology
- Hanzhong
- China
- Shaanxi Key Laboratory of Industrial Automation
| | - Ying Zhang
- School of Mechanical Engineering
- Shaanxi University of Technology
- Hanzhong
- China
- Shaanxi Key Laboratory of Industrial Automation
| | - Pengyue Shan
- School of Mechanical Engineering
- Shaanxi University of Technology
- Hanzhong
- China
- Shaanxi Key Laboratory of Industrial Automation
| | - Yunjian Chen
- School of Mechanical Engineering
- Shaanxi University of Technology
- Hanzhong
- China
- Shaanxi Key Laboratory of Industrial Automation
| | - Wanhang Wei
- School of Mechanical Engineering
- Shaanxi University of Technology
- Hanzhong
- China
- Shaanxi Key Laboratory of Industrial Automation
| | - Hongkuan Yuan
- School of Physical Science and Technology
- Southwest University
- Chongqing
- P. R. China
| | - Hong Cui
- School of Mechanical Engineering
- Shaanxi University of Technology
- Hanzhong
- China
- Shaanxi Key Laboratory of Industrial Automation
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21
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Li XZ, Wang YF, Xia J, Meng XM. Growth of vertical heterostructures based on orthorhombic SnSe/hexagonal In 2Se 3 for high-performance photodetectors. NANOSCALE ADVANCES 2019; 1:2606-2611. [PMID: 36132733 PMCID: PMC9419546 DOI: 10.1039/c9na00120d] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/25/2019] [Accepted: 05/13/2019] [Indexed: 06/13/2023]
Abstract
Vertical heterostructures based on two-dimensional (2D) layered materials are ideal platforms for electronic structure engineering and novel device applications. However, most of the current heterostructures focus on layered crystals with a similar lattice. In addition, the heterostructures made by 2D materials with different structures are rarely investigated. In this study, we successfully fabricated vertical heterostructures by combining orthorhombic SnSe/hexagonal In2Se3 vertical heterostructures using a two-step physical vapor deposition (PVD) method. Structural characterization reveals that the heterostructures are formed of vertically stacked SnSe on the top of the In2Se3 film, and vertical heterostructures possess high quality, where In2Se3 exposed surface is the (0001) plane and SnSe prefers growing along the [100] direction. Raman maps confirm the precise spatial modulation of the as-grown SnSe/In2Se3 heterostructures. In addition, high-performance photodetectors based on the vertical heterostructures were fabricated directly on the substrate, which showed a broadband response, reversibility and stability. Compared with the dark current, the device demonstrated one order magnification of photocurrent, about 186 nA, under 405 nm laser illumination and power of 1.5 mW. Moreover, the device shows an obvious increase in the photocurrent intensity with the changing incident laser power, where I ph ∝ P 0.7. Also, the device demonstrated a high responsivity of up to 350 mA W-1 and a fast response time of about 139 ms. This study broadens the horizon for the synthesis and application of vertical heterostructures based on 2D layered materials with different structures and further develops exciting technologies beyond the reach of the existing materials.
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Affiliation(s)
- Xuan-Ze Li
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences Beijing 100190 P. R. China
- Centre of Material Science and Optoelectronic Engineering, University of Chinese Academy of Science Beijing 10049 P. R. China
| | - Yi-Fan Wang
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences Beijing 100190 P. R. China
- Centre of Material Science and Optoelectronic Engineering, University of Chinese Academy of Science Beijing 10049 P. R. China
| | - Jing Xia
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences Beijing 100190 P. R. China
| | - Xiang-Min Meng
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences Beijing 100190 P. R. China
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Wang M, Wang Z, Xu X, Duan S, Du C. Tin diselenide-based saturable absorbers for eye-safe pulse lasers. NANOTECHNOLOGY 2019; 30:265703. [PMID: 30889561 DOI: 10.1088/1361-6528/ab1115] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Eye-safe pulse lasers have attracted increasing attention due to their potential wide application in many fields. However, optical modulators with excellent nonlinear optical absorption properties in the range of 1.4-2.1 μm are still very scarce. In this study, tin diselenide (SnSe2), a newly-developed 2D layered semiconductor material with facile processability and low cost, was investigated. The nonlinear optical response of SnSe2 was investigated using the open aperture Z-scan method at 1500 and 1800 nm. Using SnSe2 as the saturable absorber, a passive Q-switched solid-state laser was realized at 1.3 and 1.9 μm for the first time. This study proved SnSe2 to be an effective optical modulating material for the eye-safe waveband.
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Affiliation(s)
- Mengxia Wang
- State Key Lab of Crystal Materials, Shandong University, Jinan, 250100, People's Republic of China
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Xue H, Dai Y, Kim W, Wang Y, Bai X, Qi M, Halonen K, Lipsanen H, Sun Z. High photoresponsivity and broadband photodetection with a band-engineered WSe 2/SnSe 2 heterostructure. NANOSCALE 2019; 11:3240-3247. [PMID: 30706932 DOI: 10.1039/c8nr09248f] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
van der Waals (vdW) heterostructures formed by stacking different two-dimensional layered materials have been demonstrated as a promising platform for next-generation photonic and optoelectronic devices due to their tailorable band-engineering properties. Here, we report a high photoresponsivity and broadband photodetector based on a WSe2/SnSe2 heterostructure. By properly biasing the heterostructure, its band structure changes from near-broken band alignment to type-III band alignment which enables high photoresponsivity from visible to telecommunication wavelengths. The highest photoresponsivity and detectivity at 532 nm are ∼588 A W-1 and 4.4 × 1010 Jones and those at 1550 nm are ∼80 A W-1 and 1.4 × 1010 Jones, which are superior to those of the current state-of-the-art layered transition metal dichalcogenides based photodetectors under similar measurement conditions. Our work not only provides a new method for designing high-performance broadband photodetectors but also enables a deep understanding of the band engineering technology in the vdW heterostructures possible for other applications, such as modulators and lasers.
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Affiliation(s)
- Hui Xue
- Department of Electronics and Nanoengineering, Aalto University, Espoo 02150, Finland.
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Antoniuk ER, Cheon G, Krishnapriyan A, Rehn DA, Zhou Y, Reed EJ. New Assembly-Free Bulk Layered Inorganic Vertical Heterostructures with Infrared and Optical Bandgaps. NANO LETTERS 2019; 19:142-149. [PMID: 30525679 DOI: 10.1021/acs.nanolett.8b03500] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
In principle, a nearly endless number of unique van der Waals heterostructures can be created through the vertical stacking of two-dimensional (2D) materials, resulting in unprecedented potential for material design. However, this widely employed synthetic method for generating van der Waals heterostructures is slow, imprecise, and prone to introducing interlayer contaminants when compared with synthesis methods that are scalable to industrially relevant scales. Herein, we study the properties of a new class of layered bulk inorganic materials that has recently been reported that we call assembly-free bulk layered inorganic heterostructures, wherein the individual layers are of dissimilar chemical composition, distinguishing them from commonly studied layered materials. We find that these bulk materials exhibit properties similar to vertical heterostructures but without the complex and unscalable stacking process. Using state-of-the-art computational approaches, we study the electronic properties of livingstonite (HgSb4S8), a naturally occurring mineral that is a bulk lattice-commensurate heterostructure. We find that isolated bilayers of livingstonite have an intralayer HSE-06 band gap of 2.08 eV. This is the first report of a naturally occurring van der Waals heterostructure with a calculated band gap in the visible spectrum. We also studied the electronic properties of tetragonal Ti3Bi4O12, Sm2Ti3Bi2O12, orthorhombic Ti3Bi4O12, Nb3Bi5O15, LaTiNbBi2O9, and AgPbBrO and found some of them are potentially well-suited for photovoltaic applications. We also provide characterization of the electronic structure of the isolated bilayer and monolayer subcomponents of the bulk heterostructures. The report of the properties of these materials significantly enhances the library of known van der Waals heterostructures.
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25
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Sumesh CK, Peter SC. Two-dimensional semiconductor transition metal based chalcogenide based heterostructures for water splitting applications. Dalton Trans 2019; 48:12772-12802. [DOI: 10.1039/c9dt01581g] [Citation(s) in RCA: 53] [Impact Index Per Article: 10.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Recent research and development is focused in an intensive manner to increase the efficiency of solar energy conversion into electrical energy via photovoltaics and photo-electrochemical reactions.
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Affiliation(s)
- C. K. Sumesh
- Department of Physical Sciences
- P. D. Patel Institute of Applied Sciences
- Charotar University of Science and Technology (CHARUSAT)
- Changa-388421
- India
| | - Sebastian C. Peter
- New Chemistry Unit
- Jawaharlal Nehru Centre for Advanced Scientific Research
- Bengaluru 560064
- India
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26
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Vermeulen PA, Momand J, Kooi BJ. Low temperature epitaxy of tungsten–telluride heterostructure films. CrystEngComm 2019. [DOI: 10.1039/c9ce00338j] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/15/2023]
Abstract
Single-crystal like WTe2 films are grown by exploiting van der Waals epitaxy at low temperatures, using pulsed laser deposition.
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Affiliation(s)
| | - Jamo Momand
- Zernike institute for Advanced Materials
- University of Groningen
- Netherlands
| | - Bart Jan Kooi
- Zernike institute for Advanced Materials
- University of Groningen
- Netherlands
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27
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Batzill M. Mirror twin grain boundaries in molybdenum dichalcogenides. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2018; 30:493001. [PMID: 30457114 DOI: 10.1088/1361-648x/aae9cf] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Mirror twin grain boundaries (MTBs) exist at the interface between two grains of 60° rotated hexagonal transition metal dichalcogenides (TMDC). These grain boundaries form a regular atomic structure that extends in one dimension and thus may be described as a one-dimensional (1D) lattice embedded in the 2D TMDC. In this review, the different atomic structures and compositions of these MTBs are discussed. The obvious formation of MTBs is by coalescence of two twinned grains. In addition, however, in MoSe2 and MoTe2 a different formation mechanism has been revealed for the formation of Mo-rich MTBs. It has been shown that excess Mo can be incorporated into the TMDC lattices. These excess Mo atoms can then reorganize into closed, triangular MTB-loops that can grow in size by adding more Mo atoms to them. This mechanism allows the formation of dense MTB networks in MoSe2 and MoTe2. Such MTB networks have been observed in samples grown by molecular beam epitaxy (MBE) and consequently their presence needs to be considered in understanding the properties of MBE grown MoSe2 and MoTe2. Density functional theory as well as photoemission spectroscopy of MTB networks have shown that MTBs exhibit dispersing 1D-bands that intersect the Fermi-level, thus suggesting that these are 1D electron systems. Consequently, experimental data have been interpreted to reveal a charge density wave (or Peierls) instability, as well as a Tomonaga-Luttinger liquid behavior for electrons confined in 1D. We discuss these observations and the controversies that remain in the interpretation of some data. The metallic properties of the MTBs and their formation in dense networks also sparked the potential use of such crystal modifications for making metallic contacts to MoTe2 or MoSe2. Moreover, these crystal modifications may also boost the catalytic properties of these materials.
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Affiliation(s)
- Matthias Batzill
- Department of Physics, University of South Florida, Tampa, FL 33620, United States of America
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28
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Cattelan M, Fox NA. A Perspective on the Application of Spatially Resolved ARPES for 2D Materials. NANOMATERIALS (BASEL, SWITZERLAND) 2018; 8:E284. [PMID: 29702567 PMCID: PMC5977298 DOI: 10.3390/nano8050284] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/11/2018] [Revised: 04/20/2018] [Accepted: 04/23/2018] [Indexed: 12/13/2022]
Abstract
In this paper, a perspective on the application of Spatially- and Angle-Resolved PhotoEmission Spectroscopy (ARPES) for the study of two-dimensional (2D) materials is presented. ARPES allows the direct measurement of the electronic band structure of materials generating extremely useful insights into their electronic properties. The possibility to apply this technique to 2D materials is of paramount importance because these ultrathin layers are considered fundamental for future electronic, photonic and spintronic devices. In this review an overview of the technical aspects of spatially localized ARPES is given along with a description of the most advanced setups for laboratory and synchrotron-based equipment. This technique is sensitive to the lateral dimensions of the sample. Therefore, a discussion on the preparation methods of 2D material is presented. Some of the most interesting results obtained by ARPES are reported in three sections including: graphene, transition metal dichalcogenides (TMDCs) and 2D heterostructures. Graphene has played a key role in ARPES studies because it inspired the use of this technique with other 2D materials. TMDCs are presented for their peculiar transport, optical and spin properties. Finally, the section featuring heterostructures highlights a future direction for research into 2D material structures.
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Affiliation(s)
- Mattia Cattelan
- School of Chemistry, University of Bristol, Cantocks Close, Bristol BS8 1TS, UK; .
| | - Neil A Fox
- School of Chemistry, University of Bristol, Cantocks Close, Bristol BS8 1TS, UK; .
- H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, UK.
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Brahma M, Kabiraj A, Saha D, Mahapatra S. Scalability assessment of Group-IV mono-chalcogenide based tunnel FET. Sci Rep 2018; 8:5993. [PMID: 29662107 PMCID: PMC5902579 DOI: 10.1038/s41598-018-24209-1] [Citation(s) in RCA: 20] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/28/2017] [Accepted: 03/28/2018] [Indexed: 11/09/2022] Open
Abstract
Selection of appropriate channel material is the key to design high performance tunnel field effect transistor (TFET), which promises to outperform the conventional metal oxide semiconductor field effect transistor (MOSFET) in ultra-low energy switching applications. Recently discovered atomically thin GeSe, a group IV mono-chalcogenide, can be a potential candidate owing to its direct electronic band gap and low carrier effective mass. In this work we employ ballistic quantum transport model to assess the intrinsic performance limit of monolayer GeSe-TFET. We first study the electronic band structure by regular and hybrid density functional theory and develop two band k · p hamiltonian for the material. We find that the complex band wraps itself within the conduction band and valence band edges and thus signifies efficient band to band tunneling mechanism. We then use the k · p hamiltonian to calculate self-consistent solution of the transport equations within the non-equilibrium Green's function formalism and the Poisson's equation based electrostatic potential. Keeping the OFF-current fixed at 10 pA/μm we investigate different static and dynamic performance metrics (ON current, energy and delay) under three different constant-field scaling rules: 40, 30 and 20 nm/V. Our study shows that monolayer GeSe-TFET is scalable till 8 nm while preserving ON/OFF current ratio higher than 104.
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Affiliation(s)
- Madhuchhanda Brahma
- Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore, 560012, India. .,Nano-Scale Device Research Laboratory, Department of Electronic Systems Engineering, Indian Institute of Science, Bangalore, 560012, India.
| | - Arnab Kabiraj
- Nano-Scale Device Research Laboratory, Department of Electronic Systems Engineering, Indian Institute of Science, Bangalore, 560012, India
| | - Dipankar Saha
- Nano-Scale Device Research Laboratory, Department of Electronic Systems Engineering, Indian Institute of Science, Bangalore, 560012, India
| | - Santanu Mahapatra
- Nano-Scale Device Research Laboratory, Department of Electronic Systems Engineering, Indian Institute of Science, Bangalore, 560012, India
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30
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Tsipas P, Tsoutsou D, Fragkos S, Sant R, Alvarez C, Okuno H, Renaud G, Alcotte R, Baron T, Dimoulas A. Massless Dirac Fermions in ZrTe 2 Semimetal Grown on InAs(111) by van der Waals Epitaxy. ACS NANO 2018; 12:1696-1703. [PMID: 29314824 DOI: 10.1021/acsnano.7b08350] [Citation(s) in RCA: 24] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Single and few layers of the two-dimensional (2D) semimetal ZrTe2 are grown by molecular beam epitaxy on InAs(111)/Si(111) substrates. Excellent rotational commensurability, van der Waals gap at the interface and moiré pattern are observed indicating good registry between the ZrTe2 epilayer and the substrate through weak van der Waals forces. The electronic band structure imaged by angle resolved photoelectron spectroscopy shows that valence and conduction bands cross at the Fermi level exhibiting abrupt linear dispersions. The latter indicates massless Dirac Fermions which are maintained down to the 2D limit suggesting that single-layer ZrTe2 could be considered as the electronic analogue of graphene.
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Affiliation(s)
- Polychronis Tsipas
- National Center for Scientific Research "Demokritos" , 15310 Athens, Greece
| | - Dimitra Tsoutsou
- National Center for Scientific Research "Demokritos" , 15310 Athens, Greece
| | - Sotirios Fragkos
- National Center for Scientific Research "Demokritos" , 15310 Athens, Greece
| | - Roberto Sant
- University Grenoble Alpes , 38400 Grenoble, France
- Néel Institute, CNRS , 38042 Grenoble, France
| | - Carlos Alvarez
- University Grenoble Alpes , 38400 Grenoble, France
- CEA/INAC-MEM , F-38054 Grenoble Cedex 9, France
| | - Hanako Okuno
- University Grenoble Alpes , 38400 Grenoble, France
- CEA/INAC-MEM , F-38054 Grenoble Cedex 9, France
| | - Gilles Renaud
- University Grenoble Alpes , 38400 Grenoble, France
- CEA/INAC-MEM , F-38054 Grenoble Cedex 9, France
| | - Reynald Alcotte
- Universite Grenoble Alpes, CNRS, CEA/Leti Minatec, LTM , F-38054 Grenoble Cedex 9, France
| | - Thierry Baron
- Universite Grenoble Alpes, CNRS, CEA/Leti Minatec, LTM , F-38054 Grenoble Cedex 9, France
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31
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Murali K, Dandu M, Das S, Majumdar K. Gate-Tunable WSe 2/SnSe 2 Backward Diode with Ultrahigh-Reverse Rectification Ratio. ACS APPLIED MATERIALS & INTERFACES 2018; 10:5657-5664. [PMID: 29355302 DOI: 10.1021/acsami.7b18242] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
Backward diodes conduct more efficiently in the reverse bias than in the forward bias, providing superior high-frequency response, temperature stability, radiation hardness, and 1/f noise performance than a conventional diode conducting in the forward direction. Here, we demonstrate a van der Waals material-based backward diode by exploiting the giant staggered band offsets of WSe2/SnSe2 vertical heterojunction. The diode exhibits an ultrahigh-reverse rectification ratio (R) of ∼2.1 × 104, and the same is maintained up to an unusually large bias of 1.5 V-outperforming existing backward diode reports using conventional bulk semiconductors as well as one- and two-dimensional materials by more than an order of magnitude while maintaining an impressive curvature coefficient (γ) of ∼37 V-1. The transport mechanism in the diode is shown to be efficiently tunable by external gate and drain bias, as well as by the thickness of the WSe2 layer and the type of metal contacts used. These results pave the way for practical electronic circuit applications using two-dimensional materials and their heterojunctions.
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Affiliation(s)
- Krishna Murali
- Department of Electrical Communication Engineering, Indian Institute of Science , Bangalore 560012, India
| | - Medha Dandu
- Department of Electrical Communication Engineering, Indian Institute of Science , Bangalore 560012, India
| | - Sarthak Das
- Department of Electrical Communication Engineering, Indian Institute of Science , Bangalore 560012, India
| | - Kausik Majumdar
- Department of Electrical Communication Engineering, Indian Institute of Science , Bangalore 560012, India
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32
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Zhou X, Hu X, Zhou S, Song H, Zhang Q, Pi L, Li L, Li H, Lü J, Zhai T. Tunneling Diode Based on WSe 2 /SnS 2 Heterostructure Incorporating High Detectivity and Responsivity. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:1703286. [PMID: 29315847 DOI: 10.1002/adma.201703286] [Citation(s) in RCA: 119] [Impact Index Per Article: 19.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/12/2017] [Revised: 11/29/2017] [Indexed: 06/07/2023]
Abstract
van der Waals (vdW) heterostructures based on atomically thin 2D materials have led to a new era in next-generation optoelectronics due to their tailored energy band alignments and ultrathin morphological features, especially in photodetectors. However, these photodetectors often show an inevitable compromise between photodetectivity and photoresponsivity with one high and the other low. Herein, a highly sensitive WSe2 /SnS2 photodiode is constructed on BN thin film by exfoliating each material and manually stacking them. The WSe2 /SnS2 vdW heterostructure shows ultralow dark currents resulting from the depletion region at the junction and high direct tunneling current when illuminated, which is confirmed by the energy band structures and electrical characteristics fitted with direct tunneling. Thus, the distinctive WSe2 /SnS2 vdW heterostructure exhibits both ultrahigh photodetectivity of 1.29 × 1013 Jones (Iph /Idark ratio of ≈106 ) and photoresponsivity of 244 A W-1 at a reverse bias under the illumination of 550 nm light (3.77 mW cm-2 ).
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Affiliation(s)
- Xing Zhou
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Xiaozong Hu
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Shasha Zhou
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Hongyue Song
- School of Physics, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Qi Zhang
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Lejing Pi
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Liang Li
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Huiqiao Li
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Jingtao Lü
- School of Physics, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
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33
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Production Methods of Van der Waals Heterostructures Based on Transition Metal Dichalcogenides. CRYSTALS 2018. [DOI: 10.3390/cryst8010035] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
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34
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Duong DL, Yun SJ, Lee YH. van der Waals Layered Materials: Opportunities and Challenges. ACS NANO 2017; 11:11803-11830. [PMID: 29219304 DOI: 10.1021/acsnano.7b07436] [Citation(s) in RCA: 152] [Impact Index Per Article: 21.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/09/2023]
Abstract
Since graphene became available by a scotch tape technique, a vast class of two-dimensional (2D) van der Waals (vdW) layered materials has been researched intensively. What is more intriguing is that the well-known physics and chemistry of three-dimensional (3D) bulk materials are often irrelevant, revealing exotic phenomena in 2D vdW materials. By further constructing heterostructures of these materials in the planar and vertical directions, which can be easily achieved via simple exfoliation techniques, numerous quantum mechanical devices have been demonstrated for fundamental research and technological applications. It is, therefore, necessary to review the special features in 2D vdW materials and to discuss the remaining issues and challenges. Here, we review the vdW materials library, technology relevance, and specialties of vdW materials covering the vdW interaction, strong Coulomb interaction, layer dependence, dielectric screening engineering, work function modulation, phase engineering, heterostructures, stability, growth issues, and the remaining challenges.
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Affiliation(s)
- Dinh Loc Duong
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS) , Suwon 16419, Republic of Korea
| | - Seok Joon Yun
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS) , Suwon 16419, Republic of Korea
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS) , Suwon 16419, Republic of Korea
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Son SB, Kim Y, Kim A, Cho B, Hong WK. Ultraviolet Wavelength-Dependent Optoelectronic Properties in Two-Dimensional NbSe 2-WSe 2 van der Waals Heterojunction-Based Field-Effect Transistors. ACS APPLIED MATERIALS & INTERFACES 2017; 9:41537-41545. [PMID: 29110451 DOI: 10.1021/acsami.7b11983] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Atomically thin two-dimensional (2D) van der Waals (vdW) heterostructures are one of the very important research issues for stacked optoelectronic device applications. In this study, using the transferred and stacked NbSe2-WSe2 films as electrodes and a channel, we fabricated the field-effect transistor (FET) devices based on 2D-2D vdW metal-semiconductor heterojunctions (HJs) and systematically studied their ultraviolet (UV) wavelength-dependent electrical and photoresponse properties. Upon the exposure to UV light with a wavelength of 365 nm, the NbSe2-WSe2 vdW HJFET devices exhibited threshold voltage shift toward positive gate bias direction, a current increase, and a nonlinear photocurrent increase upon applying a gate bias due to the contribution of the photogenerated hole current. In contrast, for the 254 nm UV-irradiated FET devices, the drain current was decreased dramatically and the threshold voltage was negatively shifted. The time-resolved photoresponse properties showed that the device current after turning off the 254 nm UV light was completely and much more rapidly recovered compared with the case of the persistent photocurrent after turning off the 365 nm UV light. Interestingly, we found that the wettability of the WSe2 surface was changed with increasing irradiation time only after 254 nm UV irradiation. The measured wetting behavior on the WSe2 surface provided direct evidence that the experimentally observed UV-wavelength-dependent phenomena was attributed to the UV-induced dissociative adsorption of oxygen and water molecules, leading to the modulation of charge trap states on the photogenerated and intrinsic carriers in the p-type WSe2 channel. This study will help provide an understanding of the influence of environmental and electrical measurement conditions on the electrical and optical properties of 2D-2D vdW HJ devices for a variety of device applications through the stacking of 2D heterostructures.
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Affiliation(s)
- Seung Bae Son
- Jeonju Center, Korea Basic Science Institute , Jeonju 54907, Jeollabuk-do, Republic of Korea
| | - Yonghun Kim
- Department of Advanced Functional Thin Films, Surface Technology Division, Korea Institute of Materials Science (KIMS) , 797 Changwondaero, Sungsan-gu, Changwon 51508, Gyeongnam, Republic of Korea
| | - AhRa Kim
- Department of Advanced Functional Thin Films, Surface Technology Division, Korea Institute of Materials Science (KIMS) , 797 Changwondaero, Sungsan-gu, Changwon 51508, Gyeongnam, Republic of Korea
| | - Byungjin Cho
- Department of Advanced Material Engineering, Chungbuk National University , Seowon-gu, Cheongju 28644, Chungbuk, Republic of Korea
| | - Woong-Ki Hong
- Jeonju Center, Korea Basic Science Institute , Jeonju 54907, Jeollabuk-do, Republic of Korea
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Park JH, Vishwanath S, Wolf S, Zhang K, Kwak I, Edmonds M, Breeden M, Liu X, Dobrowolska M, Furdyna J, Robinson JA, Xing HG, Kummel AC. Selective Chemical Response of Transition Metal Dichalcogenides and Metal Dichalcogenides in Ambient Conditions. ACS APPLIED MATERIALS & INTERFACES 2017; 9:29255-29264. [PMID: 28805363 DOI: 10.1021/acsami.7b08244] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
To fabricate practical devices based on semiconducting two-dimensional (2D) materials, the source, channel, and drain materials are exposed to ambient air. However, the response of layered 2D materials to air has not been fully elucidated at the molecular level. In the present report, the effects of air exposure on transition metal dichalcogenides (TMD) and metal dichalcogenides (MD) are studied using ultrahigh-vacuum scanning tunneling microscopy (STM). The effects of a 1-day ambient air exposure on MBE-grown WSe2, chemical vapor deposition (CVD)-grown MoS2, and MBE SnSe2 are compared. Both MBE-grown WSe2 and CVD-grown MoS2 display a selective air exposure response at the step edges, consistent with oxidation on WSe2 and adsorption of hydrocarbon on MoS2, while the terraces and domain/grain boundaries of both TMDs are nearly inert to ambient air. Conversely, MBE-grown SnSe2, an MD, is not stable in ambient air. After exposure in ambient air for 1 day, the entire surface of SnSe2 is decomposed to SnOx and SeOx, as seen with X-ray photoelectron spectroscopy. Since the oxidation enthalpy of all three materials is similar, the data is consistent with greater oxidation of SnSe2 being driven by the weak bonding of SnSe2.
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Affiliation(s)
- Jun Hong Park
- Center for Quantum Nanoscience, Institute for Basic Science (IBS) , Seoul 03760, Republic of Korea
- Department of Physics, Ewha Womans University , Seoul 03760, Republic of Korea
| | | | | | - Kehao Zhang
- Department of Materials Science and Engineering, Pennsylvania State University , University Park, Pennsylvania 16802, United States
| | | | | | | | - Xinyu Liu
- Physics Department, University of Notre Dame , Notre Dame, Indiana 46556, United States
| | - Margaret Dobrowolska
- Physics Department, University of Notre Dame , Notre Dame, Indiana 46556, United States
| | - Jacek Furdyna
- Physics Department, University of Notre Dame , Notre Dame, Indiana 46556, United States
| | - Joshua A Robinson
- Department of Materials Science and Engineering, Pennsylvania State University , University Park, Pennsylvania 16802, United States
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Cheng C, Li Z, Dong N, Wang J, Chen F. Tin diselenide as a new saturable absorber for generation of laser pulses at 1μm. OPTICS EXPRESS 2017; 25:6132-6140. [PMID: 28380968 DOI: 10.1364/oe.25.006132] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The nonlinear optical responses of two-dimensional (2D) few-layer tin diselenide (SnSe2) have been investigated in this work. By applying the Z-scan technique, the saturable absorption of SnSe2 thin film has been observed at a wavelength of ~1μm, which enables SnSe2, a new saturable absorber for pulsed laser generation. A detailed exploration of the nonlinear absorption of SnSe2 film and their dependence on excitation pulse energy is carried out. Our results show that saturation intensity of the nonlinear absorption is ~23.78 GW/cm2 and corresponding nonlinear absorption coefficients are at a range from -13596 to -2967.3 cm/GW. By employing the SnSe2-coated mirror as a saturable absorber, the passively Q-switched lasing has been achieved on a crystalline waveguide platform at ~1 μm.
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