Negative Electro-conductance in Suspended 2D WS2 Nanoscale Devices

High-temperature flexible WSe2 photodetectors with ultrahigh photoresponsivity

The development of high-temperature photodetectors can be beneficial for numerous applications, such as aerospace engineering, military defence and harsh-environments robotics. However, current high-temperature photodetectors are characterized by low photoresponsivity (<10 A/W) due to the poor optical sensitivity of commonly used heat-resistant materials. Here, we report the realization of h-BN-encapsulated graphite/WSe2 photodetectors which can endure temperatures up to 700 °C in air (1000 °C in vacuum) and exhibit unconventional negative photoconductivity (NPC) at high temperatures. Operated in NPC mode, the devices show a photoresponsivity up to 2.2 × 10⁶ A/W, which is ~5 orders of magnitude higher than that of state-of-the-art high-temperature photodetectors. Furthermore, our devices demonstrate good flexibility, making it highly adaptive to various shaped surfaces. Our approach can be extended to other 2D materials and may stimulate further developments of 2D optoelectronic devices operating in harsh environments.

High-temperature photodetectors are desired for aerospace applications and harsh-environment robotics, but their responsivity is usually limited. Here, the authors report flexible hBN-encapsulated graphite/WSe2 photodetectors which can endure temperatures up to 700 °C in air with enhanced photoresponsivity.

In Situ Atomic-Scale Observation of Monolayer MoS2 Devices under High-Voltage Biasing via Transmission Electron Microscopy

2D materials have great potential for not only device scaling but also various applications. To prompt the development of 2D electronics and optoelectronics, a better understanding of the limitation of materials is essential. Material failure caused by bias can lead to variations in device behavior and even electrical breakdown. In this study, the structural evolution of monolayer MoS₂ with high bias is revealed via in situ transmission electron microscopy at the atomic scale. The biasing process is recorded and studied with the aid of aberration-corrected scanning transmission electron microscopy. The effects of electron beam irradiation and biasing are also discussed through the combination of experiments and theory. It is found that the Mo nanoclusters result from disintegration of MoS₂ and sulfur depletion, which are induced by Joule heating. The thermal stress can also damage the MoS₂ layer and form long cracks in both in situ and ex situ biasing cases. Investigation of the results obtained with different applied voltages helps to further verify the mechanism of evolution and provide a comprehensive study of the function of biasing.

Strain-Induced Alternating Photoluminescence Segmentation in Hexagonal Monolayer Tungsten Disulfide Grown by Physical Vapor Deposition

Two-dimensional semiconductors exhibit strong light emission under optical or electrical pumping due to quantum confinement and large exciton binding energies. The regulation of the light emission shows great application potential in next-generation optoelectronic devices. Herein, by the physical vapor deposition strategy, we synthesize monolayer hexagonal-shaped WS₂, and its photoluminescence intensity mapping show three-fold symmetric patterns with alternating bright and dark regions. Regardless of the length of the edges, all domains with S-terminated edges show lower photoluminescence intensity, while all regions with W-terminated edges exhibit higher photoluminescence intensity. The photoluminescence segmentation mechanism is studied in detail by employing Raman spectroscopy, atomic force microscopy, high-resolution transmission electron microscopy, and Kelvin probe force microscopy, and it is found to originate from different strain distributions in the S-terminated region and the W-terminated region. The optical band gap determined by the photoluminescence in the dark region is ∼2 meV lower than that in the bright region, implying that more strain is stored in the S-terminated region than in the W-terminated region. The photoluminescence segmentation vanishes in transferred hexagonal-shaped WS₂ from the initial substrate to a fresh silicon substrate, further confirming the physical mechanism. Our results provide guidance for tuning the optical properties of two-dimensional semiconductors by controllable strain engineering.

Tailored negative/positive photoresponse of BP via doping

Black phosphorus (BP) is a promising material for photodetectors due to its excellent and broadband photoresponse. To realize a wide application of BP in photodetection, there is a continuous eagerness for new approaches to tailor photoresponse of BP for a specific purpose, such as high sensitivity and switching of negative/positive responses. Here, we demonstrate that the ion irradiation with controllable conditions can enhance the photoresponsivity of BP for two orders compared to the pristine one, and can select the positive/negative photoresponse of the BP. The range of the tailored photoresponse covers the whole optical spectrum, ranging from the visible (532 nm) to the mid-infrared (10 μm). This work shows a pathway to modulate the photoresponse of BP, which opens new possibilities for potential photonic applications.

In Situ 2D MoS2 Field-Effect Transistors with an Electron Beam Gate

We use the beam of a transmission electron microscope (TEM) to modulate in situ the current-voltage characteristics of a two-terminal monolayer molybdenum disulfide (MoS₂) channel fabricated on a silicon nitride substrate. Suppression of the two-dimensional (2D) MoS₂ channel conductance up to 94% is observed when the beam hits and charges the substrate surface. Gate-tunable transistor characteristics dependent on beam current are observed even when the beam is up to tens of microns away from the channel. In contrast, conductance remains constant when the beam passes through a micron-sized hole in the substrate. There is no MoS₂ structural damage during gating, and the conductance reverts to its original value when the beam is turned off. We observe on/off ratios up to ∼60 that are largely independent of beam size and channel length. This TEM field-effect transistor architecture with electron beam gating provides a platform for future in situ electrical measurements.

Direct Visualization of Electric-Field-Induced Structural Dynamics in Monolayer Transition Metal Dichalcogenides

Layered transition metal dichalcogenides offer many attractive features for next-generation low-dimensional device geometries. Due to the practical and fabrication challenges related to in situ methods, the atomistic dynamics that give rise to realizable macroscopic device properties are often unclear. In this study, in situ transmission electron microscopy techniques are utilized in order to understand the structural dynamics at play, especially at interfaces and defects, in the prototypical film of monolayer MoS₂ under electrical bias. Through our sample fabrication process, we clearly identify the presence of mass transport in the presence of a lateral electric field. In particular, we observe that the voids present at grain boundaries combine to induce structural deformation. The electric field mediates a net vacancy flux from the grain boundary interior to the exposed surface edge sites that leaves molybdenum clusters in its wake. Following the initial biasing cycles, however, the mass flow is largely diminished and the resultant structure remains stable over repeated biasing. We believe insights from this work can help explain observations of nonuniform heating and preferential oxidation at grain boundary sites in these materials.

Electrical Breakdown of Suspended Mono- and Few-Layer Tungsten Disulfide via Sulfur Depletion Identified by in Situ Atomic Imaging

The high-bias and breakdown behavior of suspended mono- and few-layer WS₂ was explored by in situ aberration-corrected transmission electron microscopy. The suspended WS₂ devices were found to undergo irreversible breakdown at sufficiently high biases due to vaporization of the WS₂. Simultaneous to the removal of WS₂ was the accompanying formation of few-layer graphene decorated with W and WS₂ nanoparticles, with the carbon source attributed to organic residues present on the WS₂ surface. The breakdown of few-layer WS₂ resulted in the formation of faceted S-depleted WS₂ tendrils along the vaporization boundary, which were found to exhibit lattice contraction indicative of S depletion, alongside pure W phases incorporated into the structure, with the interfaces imaged at atomic resolution. The combination of observing the graphitization of the amorphous carbon surface residue, W nanoparticles, and S-depleted WS₂ phases following the high-bias WS₂ disintegration all indicate a thermal Joule heating breakdown mechanism over an avalanche process, with WS₂ destruction promoted by preferential S emission. The observation of graphene formation and the role the thin amorphous carbon layer has in the prebreakdown behavior of the device demonstrate the importance of employing encapsulated heterostructure device architectures that exclude residues.