Doping Versatile n-Type Organic Semiconductors via Room Temperature Solution-Processable Anionic Dopants

Efficient and air-stable n-type doping in organic semiconductors

Chemical doping of organic semiconductors (OSCs) enables feasible tuning of carrier concentration, charge mobility, and energy levels, which is critical for the applications of OSCs in organic electronic devices. However, in comparison with p-type doping, n-type doping has lagged far behind. The achievement of efficient and air-stable n-type doping in OSCs would help to significantly improve electron transport and device performance, and endow new functionalities, which are, therefore, gaining increasing attention currently. In this review, the issue of doping efficiency and doping air stability in n-type doped OSCs was carefully addressed. We first clarified the main factors that influenced chemical doping efficiency in n-type OSCs and then explain the origin of instability in n-type doped films under ambient conditions. Doping microstructure, charge transfer, and dissociation efficiency were found to determine the overall doping efficiency, which could be precisely tuned by molecular design and post treatments. To further enhance the air stability of n-doped OSCs, design strategies such as tuning the lowest unoccupied molecular orbital (LUMO) energy level, charge delocalization, intermolecular stacking, in situ n-doping, and self-encapsulations are discussed. Moreover, the applications of n-type doping in advanced organic electronics, such as solar cells, light-emitting diodes, field-effect transistors, and thermoelectrics are being introduced. Finally, an outlook is provided on novel doping ways and material systems that are aimed at stable and efficient n-type doped OSCs.

Self-Doping Naphthalene Diimide Conjugated Polymers for Flexible Unipolar n-Type OTFTs

The development of high-performance organic thin-film transistor (OTFT) materials is vital for flexible electronics. Numerous OTFTs are so far reported but obtaining high-performance and reliable OTFTs simultaneously for flexible electronics is still challenging. Herein, it is reported that self-doping in conjugated polymer enables high unipolar n-type charge mobility in flexible OTFTs, as well as good operational/ambient stability and bending resistance. New naphthalene diimide (NDI)-conjugated polymers PNDI2T-NM17 and PNDI2T-NM50 with different contents of self-doping groups on their side chains are designed and synthesized. The effects of self-doping on the electronic properties of resulting flexible OTFTs are investigated. The results reveal that the flexible OTFTs based on self-doped PNDI2T-NM17 exhibit unipolar n-type charge-carrier properties and good operational/ambient stability thanks to the appropriate doping level and intermolecular interactions. The charge mobility and on/off ratio are fourfold and four orders of magnitude higher than those of undoped model polymer, respectively. Overall, the proposed self-doping strategy is useful for rationally designing OTFT materials with high semiconducting performance and reliability.

Organometallic and Organic Dimers: Moderately Air-Stable, Yet Highly Reducing, n-Dopants

ConspectusElectrical doping using redox-active molecules can increase the conductivity of organic semiconductors and lower charge-carrier injection and extraction barriers; it has application in devices such as organic and perovskite light-emitting diodes, organic and perovskite photovoltaic cells, field-effect transistors, and thermoelectric devices. Simple one-electron reductants that can act as n-dopants for a wide range of useful semiconductors must necessarily have low ionization energies and are, thus, highly sensitive toward ambient conditions, leading to challenges in their storage and handling. A number of approaches to this challenge have been developed, in which the highly reducing species is generated from a precursor or in which electron transfer is coupled in some way to a chemical reaction. Many of these approaches are relatively limited in applicability because of processing constraints, limited dopant strength, or the formation of side products.This Account discusses our work to develop relatively stable, yet highly reducing, n-dopants based on the dimers formed by some 19-electron organometallic complexes and by some organic radicals. These dimers are sufficiently inert that they can be briefly handled as solids in air but react with acceptors to release two electrons and to form two equivalents of stable monomeric cations, without formation of unwanted side products. We first discuss syntheses of such dimers, both previously reported and our own. We next turn to discuss their thermodynamic redox potentials, which depend on both the oxidation potential of the highly reducing odd-electron monomers and on the free energies of dissociation of the dimers; because trends in both these quantities depend on the monomer stability, they often more-or-less cancel, resulting in effective redox potentials for a number of the organometallic dimers that are approximately -2.0 V vs ferrocenium/ferrocene. However, variations in the dimer oxidation potential and the dissociation energies determine the mechanism through which a dimer reacts with a given acceptor in solution: in all cases dimer-to-acceptor electron transfer is followed by dimer cation cleavage and a subsequent second electron transfer from the neutral monomer to the acceptor, but examples with weak central bonds can also react through endergonic cleavage of the neutral dimer, followed by electron-transfer reactions between the resulting monomers and the acceptor. We, then, discuss the use of these dimers to dope a wide range of semiconductors through both vacuum and solution processing. In particular, we highlight the role of photoactivation in extending the reach of one of these dopants, enabling successful doping of a low-electron-affinity electron-transport material in an organic light-emitting diode. Finally, we suggest future directions for research using dimeric dopants.

Doping Approaches for Organic Semiconductors

Electronic doping in organic materials has remained an elusive concept for several decades. It drew considerable attention in the early days in the quest for organic materials with high electrical conductivity, paving the way for the pioneering work on pristine organic semiconductors (OSCs) and their eventual use in a plethora of applications. Despite this early trend, however, recent strides in the field of organic electronics have been made hand in hand with the development and use of dopants to the point that are now ubiquitous. Here, we give an overview of all important advances in the area of doping of organic semiconductors and their applications. We first review the relevant literature with particular focus on the physical processes involved, discussing established mechanisms but also newly proposed theories. We then continue with a comprehensive summary of the most widely studied dopants to date, placing particular emphasis on the chemical strategies toward the synthesis of molecules with improved functionality. The processing routes toward doped organic films and the important doping-processing-nanostructure relationships, are also discussed. We conclude the review by highlighting how doping can enhance the operating characteristics of various organic devices.

An Organic Borate Salt with Superior p-Doping Capability for Organic Semiconductors

Molecular doping allows enhancement and precise control of electrical properties of organic semiconductors, and is thus of central technological relevance for organic (opto-) electronics. Beyond single-component molecular electron acceptors and donors, organic salts have recently emerged as a promising class of dopants. However, the pertinent fundamental understanding of doping mechanisms and doping capabilities is limited. Here, the unique capabilities of the salt consisting of a borinium cation (Mes2B+; Mes: mesitylene) and the tetrakis(penta-fluorophenyl)borate anion [B(C6F5)4]- is demonstrated as p-type dopant for polymer semiconductors. With a range of experimental methods, the doping mechanism is identified to comprise electron transfer from the polymer to Mes2B+, and the positive charge on the polymer is stabilized by [B(C6F5)4]-. Notably, the former salt cation leaves during processing and is not present in films. The anion [B(C6F5)4]- even enables the stabilization of polarons and bipolarons in poly(3-hexylthiophene), not yet achieved with other molecular dopants. From doping studies with high ionization energy polymer semiconductors, the effective electron affinity of Mes2B+[B(C6F5)4]- is estimated to be an impressive 5.9 eV. This significantly extends the parameter space for doping of polymer semiconductors.

Solution-Processable Anion-doped Conjugated Polymer for Nonvolatile Organic Transistor Memory with Synaptic Behaviors

Brain-inspired synaptic transistors have been considered as a promising device for next-generation electronics. To mimic the behavior of a biological synapse, both data processing and nonvolatile memory capability are simultaneously required for a single electronic device. In this work, a simple approach to realize a synaptic transistor with improved memory characteristics is demonstrated by doping an ionic additive, tetrabutylammonium perchlorate (TBAP), into an active polymer semiconductor without using any extra charge storage layer. TBAP doping is first revealed to improve the memory window of a derived transistor memory device from 19 to 32 V (∼68% enhancement) with an on/off current ratio over 10³ at V_G = -10 V. Through morphological analysis and theoretical calculations, it is revealed that the association of anion with polymers enhances the charge retention capability of the polymer and facilitates the interchain interactions to result in improved memory characteristics. More critically, the doped device is shown to successfully mimic the synaptic behaviors, such as paired-pulse facilitation (PPF), excitatory and inhibitory postsynaptic currents, and spike-rate dependent plasticity. Notably, the TBAP-doped device is shown to deliver a PPF index of up to 204% in contrast to the negligible value of an undoped device. This study describes a novel approach to prepare a synaptic transistor by doping conjugated polymers, which can promote the future development of artificial neuromorphic systems.

Thienoisoindigo (TII)-Based Quinoidal Small Molecules for High-Performance n-Type Organic Field Effect Transistors

A novel quinoidal thienoisoindigo (TII)-containing small molecule family with dicyanomethylene end-capping units and various alkyl chains is synthesized as n-type organic small molecules for solution-processable organic field effect transistors (OFETs). The molecular structure of the 2-hexyldecyl substituted derivative, TIIQ-b16, is determined via single-crystal X-ray diffraction and shows that the TIIQ core is planar and exhibits molecular layers stacked in a "face-to-face" arrangement with short core intermolecular distances of 3.28 Å. The very planar core structure, shortest intermolecular N···H distance (2.52 Å), existence of an intramolecular non-bonded contact between sulfur and oxygen atom (S···O) of 2.80 Å, and a very low-lying LUMO energy level of -4.16 eV suggest that TIIQ molecules should be electron transporting semiconductors. The physical, thermal, and electrochemical properties as well as OFET performance and thin film morphologies of these new TIIQs are systematically studied. Thus, air-processed TIIQ-b16 OFETs exhibit an electron mobility up to 2.54 cm2 V-1 s-1 with a current ON/OFF ratio of 105-106, which is the first demonstration of TII-based small molecules exhibiting unipolar electron transport characteristics and enhanced ambient stability. These results indicate that construction of quinoidal molecule from TII moiety is a successful approach to enhance n-type charge transport characteristics.

Recent Progress in Organic Electron Transport Materials in Inverted Perovskite Solar Cells

Organic n-type materials (e.g., fullerene derivatives, naphthalene diimides (NDIs), perylene diimides (PDIs), azaacene-based molecules, and n-type conjugated polymers) are demonstrated as promising electron transport layers (ETLs) in inverted perovskite solar cells (p-i-n PSCs), because these materials have several advantages such as easy synthesis and purification, tunable frontier molecular orbitals, decent electron mobility, low cost, good solubility in different organic solvents, and reasonable chemical/thermal stability. Considering these positive factors, approaches toward achieving effective p-i-n PSCs with these organic materials as ETLs are highlighted in this Review. Moreover, organic structures, electron transport properties, working function of electrodes caused by ETLs, and key relevant parameters (PCE and stability) of p-i-n PSCs are presented. Hopefully, this Review will provide fundamental guidance for future development of new organic n-type materials as ETLs for more efficient p-i-n PSCs.

Drastic Improvement of Air Stability in an n-Type Doped Naphthalene-Diimide Polymer by Thionation

Organic thermoelectrics are attractive for the fabrication of flexible and cost-effective thermoelectric generators (TEGs) for waste heat recovery, in particular by exploiting large-area printing of polymer conductors. Efficient TEGs require both p- and n-type conductors: so far, the air instability of polymer n-type conductors, which typically lose orders of magnitude in electrical conductivity (σ) even for short exposure time to air, has impeded processing under ambient conditions. Here we tackle this problem in a relevant class of electron transporting, naphthalene-diimide copolymers, by substituting the imide oxygen with sulfur. n-type doping of the thionated copolymer gives rise to a higher σ with respect to the non-thionated one, and most importantly, owing to a reduced energy level of the lowest-unoccupied molecular orbital, σ is substantially stable over 16 h of air exposure. This result highlights the effectiveness of chemical tuning to improve air stability of n-type solution-processable polymer conductors and shows a path toward ambient large-area manufacturing of efficient polymer TEGs.

Realizing Efficient Lead-Free Formamidinium Tin Triiodide Perovskite Solar Cells via a Sequential Deposition Route

Recently, the evolved intermediate phase based on iodoplumbate anions that mediates perovskite crystallization has been embodied as the Lewis acid-base adduct formed by metal halides (serve as Lewis acid) and polar aprotic solvents (serve as Lewis base). Based on this principle, it is proposed to constitute efficient Lewis acid-base adduct in the SnI₂ deposition step to modulate its volume expansion and fast reaction with methylammonium iodide (MAI)/formamidinium iodide (FAI) (FAI is studied hereafter). Herein, trimethylamine (TMA) is employed as the additional Lewis base in the tin halide solution to form SnY₂ -TMA complexes (Y = I^- , F^- ) in the first-step deposition, followed by intercalating with FAI to convert into FASnI. It is shown that TMA can facilitate homogeneous film formation of a SnI₂ (+SnF₂ ) layer by effectively forming intermediate SnY₂ -TMA complexes. Meanwhile, its relatively larger size and weaker affinity with SnI₂ than FA+ ions will facilitate the intramolecular exchange with FA+ ions, thereby enabling the formation of dense and compact FASnI₃ film with large crystalline domain (>1 µm). As a result, high power conversion efficiencies of 4.34% and 7.09% with decent stability are successfully accomplished in both conventional and inverted perovskite solar cells, respectively.

Conductive fullerene surfactants via anion doping as cathode interlayers for efficient organic and perovskite solar cells

Conductive fullerenes, with mild solution-processing capabilities, are developed as electron transporting materials for efficient organic and perovskite solar cells.

Naphthalene Diimide Based n-Type Conjugated Polymers as Efficient Cathode Interfacial Materials for Polymer and Perovskite Solar Cells

A series of naphthalene diimide (NDI) based n-type conjugated polymers with amino-functionalized side groups and backbones were synthesized and used as cathode interlayers (CILs) in polymer and perovskite solar cells. Because of controllable amine side groups, all the resulting polymers exhibited distinct electronic properties such as oxidation potential of side chains, charge carrier mobilities, self-doping behaviors, and interfacial dipoles. The influences of the chemical variation of amine groups on the cathode interfacial effects were further investigated in both polymer and perovskite solar cells. We found that the decreased electron-donating property and enhanced steric hindrance of amine side groups substantially weaken the capacities of altering the work function of the cathode and trap passivation of the perovskite film, which induced ineffective interfacial modifications and declining device performance. Moreover, with further improvement of the backbone design through the incorporation of a rigid acetylene spacer, the resulting polymers substantially exhibited an enhanced electron-transporting property. Upon use as CILs, high power conversion efficiencies (PCEs) of 10.1% and 15.2% were, respectively, achieved in polymer and perovskite solar cells. Importantly, these newly developed n-type polymers were allowed to be processed over a broad thickness range of CILs in photovoltaic devices, and a prominent PCE of over 8% for polymer solar cells and 13.5% for perovskite solar cells can be achieved with the thick interlayers over 100 nm, which is beneficial for roll-to-roll coating processes. Our findings contribute toward a better understanding of the structure-performance relationship between CIL material design and solar cell performance, and provide important insights and guidelines for the design of high-performance n-type CIL materials for organic and perovskite optoelectronic devices.