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Lin G, Zhu Y, Ding H, Chen G, Yang T, Jiang L, Wang R, Shentu X, Li C. Low-cost and efficient all group-IV visible/shortwave infrared dual-band photodetector. OPTICS LETTERS 2024; 49:3488-3491. [PMID: 38875652 DOI: 10.1364/ol.529590] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/08/2024] [Accepted: 05/28/2024] [Indexed: 06/16/2024]
Abstract
Low-cost broadband photodetectors (PDs) based on group-IV materials are highly demanded. Herein, a vertical all group-IV graphene-i-n (Gr-i-n) structure based on sputtering-grown undoped Ge0.92Sn0.08/Ge multiple quantum wells (MQWs) on n-Ge substrate was proposed to realize efficient visible/shortwave infrared (VIS/SWIR) dual-band photoresponse. Harnessing Gr-germanium tin (GeSn)/Ge MQWs van der Waals heterojunctions, an extended surface depletion region was established, facilitating separation and transportation of photogenerated carriers at VIS wavelengths. Consequently, remarkable VIS/SWIR dual-band response ranging from 400 to 2000 nm with a rapid response time of 23 μs was achieved. Compared to the PD without Gr, the external quantum efficiency at 420, 660, and 1520 nm was effectively enhanced by 10.2-, 5.2-, and 1.2-fold, reaching 40, 42, and 50%, respectively. This research paves the way for the advancement of all group-IV VIS/SWIR broadband PDs and presents what we believe to be a novel approach to the design of low-cost broadband PDs.
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Xue J, Tong J, Gao Z, Chen Z, Fang H, Wang S, Zhi T, Wang J. Monolayer graphene/GaN heterostructure photodetector with UV-IR dual-wavelength photoresponses. FRONTIERS OF OPTOELECTRONICS 2024; 17:17. [PMID: 38847978 PMCID: PMC11161448 DOI: 10.1007/s12200-024-00121-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/18/2024] [Accepted: 05/14/2024] [Indexed: 06/10/2024]
Abstract
An ultraviolet-infrared (UV-IR) dual-wavelength photodetector (PD) based on a monolayer (ML) graphene/GaN heterostructure has been successfully fabricated in this work. The ML graphene was synthesized by chemical vapor deposition (CVD) and subsequently transferred onto GaN substrate using polymethylmethacrylate (PMMA). The morphological and optical properties of the as-prepared graphene and GaN were presented. The fabricated PD based on the graphene/GaN heterostructure exhibited excellent rectify behavior by measuring the current-voltage (I-V) characteristics under dark conditions, and the spectral response demonstrated that the device revealed an UV-IR dual-wavelength photoresponse. In addition, the energy band structure and absorption properties of the ML graphene/GaN heterostructure were theoretically investigated based on density functional theory (DFT) to explore the underlying physical mechanism of the two-dimensional (2D)/three-dimensional (3D) hybrid heterostructure PD device. This work paves the way for the development of innovative GaN-based dual-wavelength optoelectronic devices, offering a potential strategy for future applications in the field of advanced photodetection technology.
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Affiliation(s)
- Junjun Xue
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Jiaming Tong
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Zhujun Gao
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Zhouyu Chen
- Portland Institute, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Haoyu Fang
- Portland Institute, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Saisai Wang
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China.
| | - Ting Zhi
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Jin Wang
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China.
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3
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Cao F, Liu Y, Liu M, Han Z, Xu X, Fan Q, Sun B. Wide Bandgap Semiconductors for Ultraviolet Photodetectors: Approaches, Applications, and Prospects. RESEARCH (WASHINGTON, D.C.) 2024; 7:0385. [PMID: 38803505 PMCID: PMC11128649 DOI: 10.34133/research.0385] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/20/2024] [Accepted: 04/21/2024] [Indexed: 05/29/2024]
Abstract
Ultraviolet (UV) light, invisible to the human eye, possesses both benefits and risks. To harness its potential, UV photodetectors (PDs) have been engineered. These devices can convert UV photons into detectable signals, such as electrical impulses or visible light, enabling their application in diverse fields like environmental monitoring, healthcare, and aerospace. Wide bandgap semiconductors, with their high-efficiency UV light absorption and stable opto-electronic properties, stand out as ideal materials for UV PDs. This review comprehensively summarizes recent advancements in both traditional and emerging wide bandgap-based UV PDs, highlighting their roles in UV imaging, communication, and alarming. Moreover, it examines methods employed to enhance UV PD performance, delving into the advantages, challenges, and future research prospects in this area. By doing so, this review aims to spark innovation and guide the future development and application of UV PDs.
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Affiliation(s)
- Fa Cao
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
| | - Ying Liu
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
| | - Mei Liu
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
| | - Zeyao Han
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
| | - Xiaobao Xu
- School of Electronic Science and Engineering,
Southeast University, Nanjing 210000, P. R. China
| | - Quli Fan
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
| | - Bin Sun
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
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Ahmad W, Wu J, Zhuang Q, Neogi A, Wang Z. Research Process on Photodetectors based on Group-10 Transition Metal Dichalcogenides. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2207641. [PMID: 36658722 DOI: 10.1002/smll.202207641] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/07/2022] [Revised: 01/01/2023] [Indexed: 06/17/2023]
Abstract
Rapidly evolving group-10 transition metal dichalcogenides (TMDCs) offer remarkable electronic, optical, and mechanical properties, making them promising candidates for advanced optoelectronic applications. Compared to most TMDCs semiconductors, group-10-TMDCs possess unique structures, narrow bandgap, and influential physical properties that motivate the development of broadband photodetectors, specifically infrared photodetectors. This review presents the latest developments in the fabrication of broadband photodetectors based on conventional 2D TMDCs. It mainly focuses on the recent developments in group-10 TMDCs from the perspective of the lattice structure and synthesis techniques. Recent progress in group-10 TMDCs and their heterostructures with different dimensionality of materials-based broadband photodetectors is provided. Moreover, this review accounts for the latest applications of group-10 TMDCs in the fields of nanoelectronics and optoelectronics. Finally, conclusions and outlooks are summarized to provide perspectives for next-generation broadband photodetectors based on group-10 TMDCs.
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Affiliation(s)
- Waqas Ahmad
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Jiang Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Qiandong Zhuang
- Physics Department, Lancaster University, Lancaster, LA14YB, UK
| | - Arup Neogi
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Zhiming Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
- Institute for Advanced Study, Chengdu University, Chengdu, 610106, China
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Park DH, Lee HC. Photogating Effect of Atomically Thin Graphene/MoS 2/MoTe 2 van der Waals Heterostructures. MICROMACHINES 2023; 14:140. [PMID: 36677201 PMCID: PMC9866681 DOI: 10.3390/mi14010140] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/31/2022] [Revised: 12/30/2022] [Accepted: 01/02/2023] [Indexed: 06/17/2023]
Abstract
The development of short-wave infrared photodetectors based on various two-dimensional (2D) materials has recently attracted attention because of the ability of these devices to operate at room temperature. Although van der Waals heterostructures of 2D materials with type-II band alignment have significant potential for use in short-wave infrared photodetectors, there is a need to develop photodetectors with high photoresponsivity. In this study, we investigated the photogating of graphene using a monolayer-MoS2/monolayer-MoTe2 van der Waals heterostructure. By stacking MoS2/MoTe2 on graphene, we fabricated a broadband photodetector that exhibited a high photoresponsivity (>100 mA/W) and a low dark current (60 nA) over a wide wavelength range (488−1550 nm).
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Affiliation(s)
- Do-Hyun Park
- Division of Quantum Phase and Devices, Konkuk University, Seoul 05029, Republic of Korea
| | - Hyo Chan Lee
- Chemical Engineering, Myongji University, Yongin 17058, Republic of Korea
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Qian F, Deng J, Xu C, Dong Y, Hu L, Fu G, Xie Y, Chang P, Sun J. Graphene-silicon-graphene Schottky junction photodetector with field effect structure. OPTICS EXPRESS 2022; 30:38503-38512. [PMID: 36258414 DOI: 10.1364/oe.469963] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/07/2022] [Accepted: 09/19/2022] [Indexed: 06/16/2023]
Abstract
Graphene has unique advantages in ultrabroadband detection. However, nowadays graphene-based photodetectors cannot meet the requirements for practical applications due to their poor performance. Here, we report a graphene-silicon-graphene Schottky junction photodetector assisted by field effect. Two separate graphene sheets are located on both sides of the n-doped silicon to form two opposite lateral series heterojunctions with silicon, and a transparent top gate is designed to modulate the Schottky barrier. Low doping concentration of silicon and negative gate bias can significantly raise the barrier height. Under the combined action of these two measures, the barrier height increases from 0.39 eV to 0.77 eV. Accordingly, the performance of the photodetector has been greatly improved. The photoresponsivity of the optimized device is 2.6 A/W at 792 nm, 1.8 A/W at 1064 nm, and 0.42 A/W at 1550 nm, and the on/off photo-switching ratio reaches 104. Our work provides a feasible solution for the development of graphene-based optoelectronic devices.
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Li X, Ruan S, Zhu H. SnS Nanoflakes/Graphene Hybrid: Towards Broadband Spectral Response and Fast Photoresponse. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:2777. [PMID: 36014642 PMCID: PMC9413584 DOI: 10.3390/nano12162777] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/14/2022] [Revised: 08/04/2022] [Accepted: 08/11/2022] [Indexed: 06/15/2023]
Abstract
High responsivity has been recently achieved in a graphene-based hybrid photogating mechanism photodetector using two-dimensional (2D) semiconductor nanosheets or quantum dots (QDs) sensitizers. However, there is a major challenge of obtaining photodetectors of fast photoresponse time and broad spectral photoresponse at room temperature due to the high trap density generated at the interface of nanostructure/graphene or the large band gap of QDs. The van der Waals interfacial coupling in small bandgap 2D/graphene heterostructures has enabled broadband photodetection. However, most of the photocarriers in the hybrid structure originate from the photoconductive effect, and it is still a challenge to achieve fast photodetection. Here, we directly grow SnS nanoflakes on graphene by the physical vapor deposition (PVD) method, which can avoid contamination between SnS absorbing layer and graphene and also ensures the high quality and low trap density of SnS. The results demonstrate the extended broad-spectrum photoresponse of the photodetector over a wide spectral range from 375 nm to 1550 nm. The broadband photodetecting mechanisms based on a photogating effect induced by the transferring of photo-induced carrier and photo-hot carrier are discussed in detail. More interestingly, the device also exhibits a large photoresponsivity of 41.3 AW-1 and a fast response time of around 19 ms at 1550 nm. This study reveals strategies for broadband response and sensitive photodetectors with SnS nanoflakes/graphene.
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Affiliation(s)
- Xiangyang Li
- College of Applied Technology, Shenzhen University, Shenzhen 518060, China
| | - Shuangchen Ruan
- College of New Energy and New Materials, Shenzhen Technology University, Shenzhen 518118, China
| | - Haiou Zhu
- College of New Energy and New Materials, Shenzhen Technology University, Shenzhen 518118, China
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Yuan X, Zhang N, Zhang T, Meng L, Zhang J, Shao J, Liu M, Hu H, Wang L. Influence of metal-semiconductor junction on the performances of mixed-dimensional MoS 2/Ge heterostructure avalanche photodetector. OPTICS EXPRESS 2022; 30:20250-20260. [PMID: 36224775 DOI: 10.1364/oe.458528] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/15/2022] [Accepted: 05/16/2022] [Indexed: 06/16/2023]
Abstract
The two-dimensional/three-dimensional van der Waals heterostructures provide novel optoelectronic properties for the next-generation of information devices. Herein, MoS2/Ge heterojunction avalanche photodetectors are readily obtained. The device with an Ag electrode at MoS2 side exhibits more stable rectification characteristics than that with an Au electrode. The rectification radio greater than 103 and a significant avalanche breakdown are observed in the device. The responsivity of 170 and 4 A/W and the maximum gain of 320 and 13 are obtained under 532 and 1550 nm illumination, respectively. Such photoelectric properties are attributed to the carrier multiplication at a Ge/MoS2 junction due to an avalanche breakdown. The mechanism is confirmed by the Sentaurus TCAD-simulated I-V characteristics.
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Wei YN, Hu XG, Zhang JW, Tong B, Du JH, Liu C, Sun DM, Liu C. Fermi-Level Depinning in Metal/Ge Junctions by Inserting a Carbon Nanotube Layer. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2201840. [PMID: 35561072 DOI: 10.1002/smll.202201840] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/24/2022] [Revised: 04/23/2022] [Indexed: 06/15/2023]
Abstract
Germanium (Ge)-based devices are recognized as one of the most promising next-generation technologies for extending Moore's law. However, one of the critical issues is Fermi-level pinning (FLP) at the metal/n-Ge interface, and the resulting large contact resistance seriously degrades their performance. The insertion of a thin layer is one main technique for FLP modulation; however, the contact resistance is still limited by the remaining barrier height and the resistance induced by the insertion layer. In addition, the proposed depinning mechanisms are also controversial. Here, the authors report a wafer-scale carbon nanotube (CNT) insertion method to alleviate FLP. The inserted conductive film reduces the effective Schottky barrier height without inducing a large resistance, leading to ohmic contact and the smallest contact resistance between a metal and a lightly doped n-Ge. These devices also indicate that the metal-induced gap states mechanism is responsible for the pinning. Based on the proposed technology, a wafer-scale planar diode array is fabricated at room temperature without using the traditional ion-implantation and annealing technology, achieving an on-to-off current ratio of 4.59 × 104 . This work provides a new way of FLP modulation that helps to improve device performance with new materials.
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Affiliation(s)
- Yu-Ning Wei
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang, 110016, P. R. China
| | - Xian-Gang Hu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang, 110016, P. R. China
| | - Jian-Wei Zhang
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 3888 Dong-Nanhu Road, Changchun, 130033, P. R. China
| | - Bo Tong
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang, 110016, P. R. China
| | - Jin-Hong Du
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang, 110016, P. R. China
| | - Chang Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang, 110016, P. R. China
| | - Dong-Ming Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang, 110016, P. R. China
| | - Chi Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang, 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang, 110016, P. R. China
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Zhou ZX, Ye MJ, Yu MW, Yang JH, Su KL, Yang CC, Lin CY, Babicheva VE, Timofeev IV, Chen KP. Germanium Metasurfaces with Lattice Kerker Effect in Near-Infrared Photodetectors. ACS NANO 2022; 16:5994-6001. [PMID: 35191683 DOI: 10.1021/acsnano.1c11326] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
In O-and C-band optical communications, Ge is a promising material for detecting optical signals that are encoded into electrical signals. Herein, we study 2D periodic Ge metasurfaces that support optically induced electric dipole and magnetic dipole lattice resonances. By overlapping Mie resonances and electric dipole lattice resonances, we realize the resonant lattice Kerker effect and achieve narrowband absorption. This effect was applied to the photodetector demonstrated in this study. The absorptance of the Ge nanoantenna arrays increased 6-fold compared to that of the unpatterned Ge films. In addition, the photocurrent in such Ge metasurface photodetectors increases by approximately 5 times compared with that in plane Ge film photodetectors by the interaction of these strong near-fields with semiconductors and the further transformation of the optical energy into electricity.
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Affiliation(s)
- Zhong-Xing Zhou
- Institute of Photonic System, National Yang Ming Chiao Tung University, 301 Gaofa 3rd Road, Tainan 711, Taiwan
| | - Ming-Jyun Ye
- College of Photonics, National Yang Ming Chiao Tung University, 301 Gaofa 3rd Road, Tainan 711, Taiwan
| | - Min-Wen Yu
- College of Photonics, National Yang Ming Chiao Tung University, 301 Gaofa 3rd Road, Tainan 711, Taiwan
| | - Jhen-Hong Yang
- Institute of Photonic System, National Yang Ming Chiao Tung University, 301 Gaofa 3rd Road, Tainan 711, Taiwan
| | - Kuan-Lin Su
- Institute of Lighting and Energy Photonics, National Yang Ming Chiao Tung University, 301 Gaofa 3rd Road, Tainan 711, Taiwan
| | - Chung-Ching Yang
- Institute of Photonic System, National Yang Ming Chiao Tung University, 301 Gaofa 3rd Road, Tainan 711, Taiwan
| | - Cheng-Yeh Lin
- Institute of Photonic System, National Yang Ming Chiao Tung University, 301 Gaofa 3rd Road, Tainan 711, Taiwan
| | - Viktoriia E Babicheva
- Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87131, United States
| | - Ivan V Timofeev
- Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk 660036, Russia
- Institute of Engineering Physics and Radioelectronics, Siberian Federal University, Krasnoyarsk 660041, Russia
| | - Kuo-Ping Chen
- Institute of Imaging and Biomedical Photonics, National Yang Ming Chiao Tung University, 301 Gaofa 3rd Road, Tainan 711, Taiwan
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Sai Manohar GV, Das D, Nanda KK. Robust Visible-Blind Wearable Infrared Sensor Based on IrP 2 Nanoparticle-Embedded Few-Layer Graphene and the Effect of Photogating. ACS APPLIED MATERIALS & INTERFACES 2021; 13:54258-54265. [PMID: 34747587 DOI: 10.1021/acsami.1c15037] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
It is challenging to realize a visible-blind infrared photodetector as the materials that absorb infrared light also absorb visible light. Here, we report the synthesis of IrP2 nanoparticle-embedded few-layer graphene by one-step solid-state pyrolysis and its application in visible-blind infrared sensing. A linear photodetector device was fabricated by drop casting IrP2 nanoparticle-embedded few-layer graphene onto a flexible PET substrate with two gold electrodes separated by ∼16 μm. The photoconductive gain was found to be as high as ∼145% with response and decay times of ∼0.4 and ∼2.8 s, respectively, under 1550 nm irradiation of 800 mW cm-2. The room-temperature responsivity was ∼1.81 A W-1 at 80 mW cm-2 and ∼0.54 A W-1 at a high incident power of ∼2200 mW cm-2 under a bias of 1 V. Interestingly, the device showed response even in the long-wavelength infrared region, but no response was found under visible light. The embedded IrP2 nanoparticles act as trap centers inducing photogating in the device, and the average trap state energy was estimated to be ∼16.5 ± 1.5 meV from the temperature-dependent photocurrent studies. The device was found to be immune to air exposure and bending, suggestive of use a a wearable sensor.
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Affiliation(s)
| | - Debanjan Das
- Material Research Center, Indian Institute of Science, Bangalore 560012, India
| | - Karuna Kar Nanda
- Material Research Center, Indian Institute of Science, Bangalore 560012, India
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Yadav PVK, Ajitha B, Kumar Reddy YA, Sreedhar A. Recent advances in development of nanostructured photodetectors from ultraviolet to infrared region: A review. CHEMOSPHERE 2021; 279:130473. [PMID: 33892456 DOI: 10.1016/j.chemosphere.2021.130473] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/18/2021] [Revised: 03/10/2021] [Accepted: 03/30/2021] [Indexed: 05/25/2023]
Abstract
Herein, we aim to evaluate the photodetector performance of various nanostructured materials (thin films, 2-D nanolayers, 1-D nanowires, and 0-D quantum dots) in ultraviolet (UV), visible, and infrared (IR) regions. Specifically, semiconductor-based metal oxides such as ZnO, Ga2O3, SnO2, TiO2, and WO3 are the majority preferred materials for UV photodetection due to their broad band gap, stability, and relatively simple fabrication processes. Whereas, the graphene-based hetero- and nano-structured composites are considered as prominent visible light active photodetectors. Interestingly, graphene exhibits broad band spectral absorption and ultra-high mobility, which derives graphene as a suitable candidate for visible detector. Further, due to the very low absorption rate of graphene (2%), various materials have been integrated with graphene (rGO-CZS, PQD-rGO, N-SLG, and GO doped PbI2). In the case of IR photodetectors, quantum dot IR detectors prevails significant advantage over the quantum well IR detectors due to the 0-D quantum confinement and ability to absorb the light with any polarization. In such a way, we discussed the most recent developments on IR detectors using InAs and PbS quantum dot nanostructures. Overall, this review gives clear view on the development of suitable device architecture under prominent nanostructures to tune the photodetector performance from UV to IR spectral regions for wide-band photodetectors.
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Affiliation(s)
- P V Karthik Yadav
- Department of Physics, Indian Institute of Information Technology, Design and Manufacturing, Kancheepuram, Off Vandalur-Kelambakkam Road, Chennai, 600127, India
| | - B Ajitha
- Division of Physics, School of Advanced Sciences, Vellore Institute of Technology (VIT), Vandalur - Kelambakkam Road, Chennai, 600127, India
| | - Y Ashok Kumar Reddy
- Department of Physics, Indian Institute of Information Technology, Design and Manufacturing, Kancheepuram, Off Vandalur-Kelambakkam Road, Chennai, 600127, India.
| | - Adem Sreedhar
- Department of Physics, Gachon University, 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do, 461701, Republic of Korea.
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Tang X, Fan T, Wang C, Zhang H. Halogen Functionalization in the 2D Material Flatland: Strategies, Properties, and Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2005640. [PMID: 33783132 DOI: 10.1002/smll.202005640] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/10/2020] [Revised: 10/12/2020] [Indexed: 06/12/2023]
Abstract
Given the electronegativity and bonding environment of halogen elements, halogenation (i.e., fluorination, chlorination, bromination, and iodination) serves as a versatile strategy for chemical modifications of materials. The combination of halogens and 2D materials has triggered extensive interests since the first report on graphene fluorination in 2008. Subsequently, scholars consistently conduct pre-, in-process, or posthalogenation modifications of emerging 2D materials to achieve desired properties and broad device applications. They also continuously explore the role of halogens in 2D material functionalization. The multiple advantages introduced by halogen decoration make 2D materials outstanding from each subclass. In this review, an overall retrospect is provided on the research advances in the area of 2D material halogenation, including experimental halogenation strategies, halogen-triggered novel physics and properties, and advanced applications across the studied objects. Future research directions in this area are also proposed.
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Affiliation(s)
- Xian Tang
- School of Nuclear Science and Technology, University of South China, Hengyang, 421001, China
| | - Touwen Fan
- School of Nuclear Science and Technology, University of South China, Hengyang, 421001, China
| | - Cong Wang
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, China
| | - Han Zhang
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, China
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Luo LB, Zhang XX, Li C, Li JX, Zhao XY, Zhang ZX, Chen HY, Wu D, Liang FX. Fabrication of PdSe2/GaAs heterojunction for sensitive near-infrared photovoltaic detector and image sensor application. CHINESE J CHEM PHYS 2020. [DOI: 10.1063/1674-0068/cjcp2005066] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022]
Affiliation(s)
- Lin-bao Luo
- School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, China
| | - Xiu-xing Zhang
- School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, China
| | - Chen Li
- School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, China
| | - Jia-xiang Li
- School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, China
| | - Xing-yuan Zhao
- School of Materials Sciences and Engineering, Hefei University of Technology, Hefei 230009, China
| | - Zhi-xiang Zhang
- School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, China
| | - Hong-yun Chen
- School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, China
| | - Di Wu
- School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Feng-xia Liang
- School of Materials Sciences and Engineering, Hefei University of Technology, Hefei 230009, China
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15
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Zhao M, Xue Z, Zhu W, Wang G, Tang S, Liu Z, Guo Q, Chen D, Chu PK, Ding G, Di Z. Interface Engineering-Assisted 3D-Graphene/Germanium Heterojunction for High-Performance Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2020; 12:15606-15614. [PMID: 32157866 DOI: 10.1021/acsami.0c02485] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Three-dimensional graphene (3D-Gr) with excellent light absorption properties has received enormous interest, but in conventional processes to prepare 3D-Gr, amorphous carbon layers are inevitably introduced as buffer layers that may degrade the performance of graphene-based devices. Herein, 3D-Gr is prepared on germanium (Ge) using two-dimensional graphene (2D-Gr) as the buffer layer. 2D-Gr as the buffer layer facilitates the in situ synthesis of 3D-Gr on Ge by plasma-enhanced chemical vapor deposition (PECVD) by promoting 2D-Gr nucleation and reducing the barrier height. The growth mechanism is investigated and described. The enhanced light absorption as confirmed by theoretical calculation and 3D-Gr/2D-Gr/Ge with a Schottky junction improves the performance of optoelectronic devices without requiring pre- and post-transfer processes. The photodetector constructed with 3D-Gr/2D-Gr/Ge shows an excellent responsivity of 1.7 A W-1 and detectivity 3.42 × 1014 cm Hz1/2 W-1 at a wavelength of 1550 nm. This novel hybrid structure that incorporates 3D- and 2D-Gr into Ge-based integrated circuits and photodetectors delivers excellent performance and has large commercial potential.
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Affiliation(s)
- Menghan Zhao
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, P. R. China
| | - Zhongying Xue
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China
| | - Wei Zhu
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, P. R. China
| | - Gang Wang
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, P. R. China
| | - Shiwei Tang
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, P. R. China
| | - Zhiduo Liu
- State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
| | - Qinglei Guo
- Center of Nanoelectronics and School of Microelectronics, Shandong University, Jinan 250100, P. R. China
| | - Da Chen
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo 315211, P. R. China
| | - Paul K Chu
- Department of Physics, Department of Materials Science and Engineering, and Department of Biomedical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong 999077, P. R. China
| | - Guqiao Ding
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China
| | - Zengfeng Di
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, P. R. China
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16
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Li J, Xi X, Lin S, Ma Z, Li X, Zhao L. Ultrahigh Sensitivity Graphene/Nanoporous GaN Ultraviolet Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2020; 12:11965-11971. [PMID: 32072811 DOI: 10.1021/acsami.9b22651] [Citation(s) in RCA: 18] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
Integration of graphene with three-dimensional semiconductors can introduce unique optical and electrical properties that overcome the intrinsic limitation of the materials. Here, we report on the high sensitivity ultraviolet (UV) photodetectors based on monolayer graphene/nanoporous GaN heterojunctions. By investigating the reflectivity, photoluminescence, and Raman spectral characteristics of nanoporous GaN, we find that the increase in the porosity can help to improve its optical properties. The device based on the highest-porosity nanoporous GaN demonstrates rapid and linear response to UV photons, with an ultrahigh detectivity of 1.0 × 1017 Jones and a UV-visible rejection ratio of 4.8 × 107 at V = -1.5 V. We attribute such high sensitivity to the combination of the significantly enhanced light harvesting of high-porosity nanoporous GaN and the unique UV absorption, high mobility, and finite density of states of the monolayer graphene. The high performance together with a simple and low-cost fabrication process endow these graphene/nanoporous GaN heterojunctions with great potential for future selective detection of weak UV optical signals.
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Affiliation(s)
- Jing Li
- State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, Qinghua East Road, Haidian District, Beijing 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, No. 19A, Yuquan Road, Shijingshan District, Beijing 100049, China
| | - Xin Xi
- State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, Qinghua East Road, Haidian District, Beijing 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, No. 19A, Yuquan Road, Shijingshan District, Beijing 100049, China
| | - Shan Lin
- State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, Qinghua East Road, Haidian District, Beijing 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, No. 19A, Yuquan Road, Shijingshan District, Beijing 100049, China
| | - Zhanhong Ma
- State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, Qinghua East Road, Haidian District, Beijing 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, No. 19A, Yuquan Road, Shijingshan District, Beijing 100049, China
| | - Xiaodong Li
- State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, Qinghua East Road, Haidian District, Beijing 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, No. 19A, Yuquan Road, Shijingshan District, Beijing 100049, China
| | - Lixia Zhao
- State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, No. A35, Qinghua East Road, Haidian District, Beijing 100083, China
- Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, No. 19A, Yuquan Road, Shijingshan District, Beijing 100049, China
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17
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Akhtar F, Dabrowski J, Lisker M, Yamamoto Y, Mai A, Wenger C, Lukosius M. Investigation of the Oxidation Behavior of Graphene/Ge(001) Versus Graphene/Ge(110) Systems. ACS APPLIED MATERIALS & INTERFACES 2020; 12:3188-3197. [PMID: 31895529 DOI: 10.1021/acsami.9b18448] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The oxidation behavior of Ge(001) and Ge(110) surfaces underneath the chemical vapor deposition (CVD)-grown graphene films has been investigated experimentally and interpreted on the basis of ab initio calculations. Freshly grown samples were exposed to air for more than 7 months and periodically monitored by X-ray photoelectron spectroscopy, scanning electron microscopy, and Raman spectroscopy. The oxidation of Ge(110) started with incubation time of several days, during which the oxidation rate was supposedly exponential. After an ultrathin oxide grew, the oxidation continued with a slow but constant rate. No incubation was detected for Ge(001). The oxide thickness was initially proportional to the square root of time. After 2 weeks, the rate saturated at a value fivefold higher than that for Ge(110). We argue that after the initial phase, the oxidation is limited by the diffusion of oxidizing species through atomic-size openings at graphene domain boundaries and is influenced by the areal density and by the structural quality of the boundaries, whereby the latter determines the initial behavior. Prolonged exposure affected the surface topography and reduced the strain in graphene. In the last step, both the air-exposed samples were annealed in vacuum at 850 °C. This removed oxygen from the substrate and restored the samples to their initial state. These findings might constitute an important step toward further optimization of graphene grown on Ge.
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Affiliation(s)
- Fatima Akhtar
- IHP-Leibniz-Institut für Innovative Mikroelektronik , Im Technologiepark 25 , 15236 Frankfurt (Oder) , Germany
| | - Jaroslaw Dabrowski
- IHP-Leibniz-Institut für Innovative Mikroelektronik , Im Technologiepark 25 , 15236 Frankfurt (Oder) , Germany
| | - Marco Lisker
- IHP-Leibniz-Institut für Innovative Mikroelektronik , Im Technologiepark 25 , 15236 Frankfurt (Oder) , Germany
| | - Yuji Yamamoto
- IHP-Leibniz-Institut für Innovative Mikroelektronik , Im Technologiepark 25 , 15236 Frankfurt (Oder) , Germany
| | - Andreas Mai
- IHP-Leibniz-Institut für Innovative Mikroelektronik , Im Technologiepark 25 , 15236 Frankfurt (Oder) , Germany
- Technical University of Applied Sciences Wildau , Hochschulring 1 , 15745 Wildau , Germany
| | - Christian Wenger
- IHP-Leibniz-Institut für Innovative Mikroelektronik , Im Technologiepark 25 , 15236 Frankfurt (Oder) , Germany
- Brandenburg Medical School Theodor Fontane , 16816 Neuruppin , Germany
| | - Mindaugas Lukosius
- IHP-Leibniz-Institut für Innovative Mikroelektronik , Im Technologiepark 25 , 15236 Frankfurt (Oder) , Germany
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18
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Yang J, Tang L, Luo W, Shen J, Zhou D, Feng S, Wei X, Shi H. Light Trapping in Conformal Graphene/Silicon Nanoholes for High-Performance Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2019; 11:30421-30429. [PMID: 31342736 DOI: 10.1021/acsami.9b08268] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Hybrid graphene/silicon heterojunctions have been widely utilized in photodetectors because of their unique characteristics of high sensitivity, fast response, and CMOS compatibility. However, the photoresponse is restricted by the high reflectance of planar silicon (up to 50%). Herein, an improved graphene/Si detector with excellent light absorption performance is proposed and demonstrated by directly growing graphene on the surface of silicon nanoholes (SiNHs). It is shown that the combination of SiNHs with conformal graphene provides superior interfaces for efficient light trapping and transport of the photoexcited carriers. A high absorption of up to 90% was achieved, and the conformal graphene/SiNH-based photodetectors exhibited a higher photoresponsivity (2720 A/W) and faster response (∼6.2 μs), compared with the counterpart of the planar graphene/Si, for which the corresponding values are 850 A/W and 51.3 μs. These results showcase the vital role of the material morphology in optoelectronic conversion and pave the way to explore novel high-performance heterojunction photodetectors.
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Affiliation(s)
- Jun Yang
- Chongqing Key Laboratory of Multi-scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology , Chinese Academy of Sciences , Chongqing 400714 , P. R. China
- University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
| | - Linlong Tang
- Chongqing Key Laboratory of Multi-scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology , Chinese Academy of Sciences , Chongqing 400714 , P. R. China
| | - Wei Luo
- Chongqing Key Laboratory of Multi-scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology , Chinese Academy of Sciences , Chongqing 400714 , P. R. China
| | - Jun Shen
- Chongqing Key Laboratory of Multi-scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology , Chinese Academy of Sciences , Chongqing 400714 , P. R. China
| | - Dahua Zhou
- Chongqing Key Laboratory of Multi-scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology , Chinese Academy of Sciences , Chongqing 400714 , P. R. China
| | - Shuanglong Feng
- Chongqing Key Laboratory of Multi-scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology , Chinese Academy of Sciences , Chongqing 400714 , P. R. China
| | - Xingzhan Wei
- Chongqing Key Laboratory of Multi-scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology , Chinese Academy of Sciences , Chongqing 400714 , P. R. China
| | - Haofei Shi
- Chongqing Key Laboratory of Multi-scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology , Chinese Academy of Sciences , Chongqing 400714 , P. R. China
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Lee JH, Kang SG, Jang HS, Moon JY, Whang D. Graphene on Group-IV Elementary Semiconductors: The Direct Growth Approach and Its Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1803469. [PMID: 30734378 DOI: 10.1002/adma.201803469] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/01/2018] [Revised: 11/17/2018] [Indexed: 06/09/2023]
Abstract
Since the first development of large-area graphene synthesis by the chemical vapor deposition (CVD) method in 2009, CVD-graphene has been considered to be a key material in the future electronics, energy, and display industries, which require transparent, flexible, and stretchable characteristics. Although many graphene-based prototype applications have been demonstrated, several important issues must be addressed in order for them to be compatible with current complementary metal-oxide-semiconductor (CMOS)-based manufacturing processes. In particular, metal contamination and mechanical damage, caused by the metal catalyst for graphene growth, are known to cause severe and irreversible deterioration in the performance of devices. The most effective way to solve the problems is to grow the graphene directly on the semiconductor substrate. Herein, recent advances in the direct growth of graphene on group-IV semiconductors are reviewed, focusing mainly on the growth mechanism and initial growth behavior when graphene is synthesized on Si and Ge. Furthermore, recent progress in the device applications of graphene with Si and Ge are presented. Finally, perspectives for future research in graphene with a semiconductor are discussed.
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Affiliation(s)
- Jae-Hyun Lee
- Department of Energy Systems Research and Department of Materials Science and Engineering, Ajou University, Suwon, Gyeonggi-do, 16499, South Korea
| | - Seog-Gyun Kang
- School of Advanced Materials Science and Engineering, SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do, 16419, South Korea
| | - Hyeon-Sik Jang
- School of Advanced Materials Science and Engineering, SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do, 16419, South Korea
| | - Ji-Yun Moon
- Department of Energy Systems Research and Department of Materials Science and Engineering, Ajou University, Suwon, Gyeonggi-do, 16499, South Korea
| | - Dongmok Whang
- School of Advanced Materials Science and Engineering, SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do, 16419, South Korea
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20
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Stavarache I, Teodorescu VS, Prepelita P, Logofatu C, Ciurea ML. Ge nanoparticles in SiO 2 for near infrared photodetectors with high performance. Sci Rep 2019; 9:10286. [PMID: 31312003 PMCID: PMC6635504 DOI: 10.1038/s41598-019-46711-w] [Citation(s) in RCA: 16] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/17/2018] [Accepted: 06/27/2019] [Indexed: 02/07/2023] Open
Abstract
In this work we prepared films of amorphous germanium nanoparticles embedded in SiO2 deposited by magnetron sputtering on Si and quartz heated substrates at 300, 400 and 500 °C. Structure, morphology, optical, electrical and photoconduction properties of all films were investigated. The Ge concentration in the depth of the films is strongly dependent on the deposition temperature. In the films deposited at 300 °C, the Ge content is constant in the depth, while films deposited at 500 °C show a significant decrease of Ge content from interface of the film with substrate towards the film free surface. From the absorption curves we obtained the Ge band gap of 1.39 eV for 300 °C deposited films and 1.44 eV for the films deposited at 500 °C. The photocurrents are higher with more than one order of magnitude than the dark ones. The photocurrent spectra present different cutoff wavelengths depending on the deposition temperature, i.e. 1325 nm for 300 °C and 1267 nm for 500 °C. These films present good responsivities of 2.42 AW−1 (52 μW incident power) at 300 °C and 0.69 AW−1 (57 mW) at 500 °C and high internal quantum efficiency of ∼445% for 300 °C and ∼118% for 500 °C.
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Affiliation(s)
- Ionel Stavarache
- National Institute of Materials Physics, 405A Atomistilor Street, 077125, Magurele, Ilfov, Romania.
| | | | - Petronela Prepelita
- National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Street, 077125, Magurele, Ilfov, Romania
| | - Constantin Logofatu
- National Institute of Materials Physics, 405A Atomistilor Street, 077125, Magurele, Ilfov, Romania
| | - Magdalena Lidia Ciurea
- National Institute of Materials Physics, 405A Atomistilor Street, 077125, Magurele, Ilfov, Romania. .,Academy of Romanian Scientists, 050094, Bucharest, Romania.
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21
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Xu JY, Yu JS, Liao JH, Yang XB, Wu CY, Wang Y, Wang L, Xie C, Luo LB. Opening the Band Gap of Graphene via Fluorination for High-Performance Dual-Mode Photodetector Application. ACS APPLIED MATERIALS & INTERFACES 2019; 11:21702-21710. [PMID: 31120233 DOI: 10.1021/acsami.9b04389] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Fluorination is an effective process to open the band gap of graphene (Gr), which is beneficial to the development of optoelectronic devices working in wide wavelength. Herein, we report a dual-mode broadband photodetector (PD) by integrating fluorinated graphene (F-Gr) with silicon (Si). It is found that when working in photoconductive mode, the F-Gr/Si heterojunction exhibited a remarkable photoresponse over a wide spectral region from ultraviolet (UV), visible to near infrared (NIR) light with a high responsivity ( R) of 1.9 × 107 A W-1 and specific detectivity ( D*) of 4.4 × 1012 Jones at 650 nm. Nonetheless, both parameters will be considerably reduced when the F-Gr/Si heterojunction works in the photodiode mode. In this mode, the Ilight/ Idark ratio is as high as 2.0 × 105 and the response speed is accelerated by more than 3 orders of magnitude from about 5 ms to 6.3 μs. Notably, the responsivity of the device in the UV and NIR regions was remarkably enhanced in comparison with that of pristine Gr/Si-heterojunction-based devices. Considering the F-coverage-dependent band gap of the F-Gr revealed by the first-principle calculations, we believe that the enhancement was ascribed to the opening of the band gap in the partially fluorinated Gr, which is stabilized due to the configuration entropy as the temperature increases. The dual-mode PD enabled the simultaneous weak light detection and fast photodetection, which overcome the limitation of the traditional monomode PD.
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Affiliation(s)
- Ji-Yu Xu
- School of Electronic Science and Applied Physics , Hefei University of Technology , Hefei , Anhui 230009 , China
| | - Ju-Song Yu
- Department of Physics , South China University of Technology , Guangzhou 510640 , Guangdong , China
| | - Ji-Hai Liao
- Department of Physics , South China University of Technology , Guangzhou 510640 , Guangdong , China
| | - Xiao-Bao Yang
- Department of Physics , South China University of Technology , Guangzhou 510640 , Guangdong , China
| | - Chun-Yan Wu
- School of Electronic Science and Applied Physics , Hefei University of Technology , Hefei , Anhui 230009 , China
| | - Yi Wang
- School of Electronic Science and Applied Physics , Hefei University of Technology , Hefei , Anhui 230009 , China
| | - Li Wang
- School of Electronic Science and Applied Physics , Hefei University of Technology , Hefei , Anhui 230009 , China
| | - Chao Xie
- School of Electronic Science and Applied Physics , Hefei University of Technology , Hefei , Anhui 230009 , China
| | - Lin-Bao Luo
- School of Electronic Science and Applied Physics , Hefei University of Technology , Hefei , Anhui 230009 , China
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22
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Shinde SL, Ishii S, Nagao T. Sub-Band Gap Photodetection from the Titanium Nitride/Germanium Heterostructure. ACS APPLIED MATERIALS & INTERFACES 2019; 11:21965-21972. [PMID: 31056897 DOI: 10.1021/acsami.9b01372] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Photoexcited hot carriers through nonradiative decay offer new opportunities for harnessing longer wavelength light. Here, we have demonstrated a hot-carrier-mediated sub-band gap photodetection in germanium-based planar heterojunction devices. The planar samples that form in situ germanium/titanium nitride (Ge/TiN) interfaces are fabricated by the dc sputtering technique, and the generation of photocurrent by near-infrared (NIR) light illumination is confirmed up to 2600 nm, well exceeding the absorption limit of Ge. The photocurrent obtained with nickel contacts is 3 orders larger than that obtained without metal contacts or with gold contacts in similar structures. The specific detectivity ( D*) value for the TiN/Ge photodetector is obtained to be 6.32 × 105 Jones at the sub-band gap excitation wavelength of 2000 nm without applying any bias. The superior performances of our device are attributed to the broad absorption of the TiN, the plasmonic hot carrier transfer from the TiN to Ge, and built-in potential of the TiN/Ge non-Ohmic junction, which allows efficient separation of photoexcited electron-hole pairs. Our results further support the use of TiN, which is robust and cost-effective, as an alternative to metals for NIR photodetection and photovoltaics when it forms a heterostructure with Ge.
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Affiliation(s)
- Satish Laxman Shinde
- International Center for Materials Nanoarchitectonics (MANA) , National Institute for Materials Science (NIMS) , Tsukuba , Ibaraki 305-0044 , Japan
| | - Satoshi Ishii
- International Center for Materials Nanoarchitectonics (MANA) , National Institute for Materials Science (NIMS) , Tsukuba , Ibaraki 305-0044 , Japan
| | - Tadaaki Nagao
- International Center for Materials Nanoarchitectonics (MANA) , National Institute for Materials Science (NIMS) , Tsukuba , Ibaraki 305-0044 , Japan
- Department of Condensed Matter Physics Graduate School of Science , Hokkaido University , Sapporo 060-0810 , Japan
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Zhou Q, Shen J, Liu X, Li Z, Jiang H, Feng S, Feng W, Wang Y, Wei D. Hybrid graphene heterojunction photodetector with high infrared responsivity through barrier tailoring. NANOTECHNOLOGY 2019; 30:195202. [PMID: 30523952 DOI: 10.1088/1361-6528/aaf266] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The graphene/Si heterojunction is attractive for high gain and broadband photodetection through photogating effect. However, the photoresponsivity in these devices are still limited to under 1 A W-1 if no narrowband absorption-enhanced nanostructures were used. In this paper, the effects of barriers on photoresponse are systematically studied at 1550 nm wavelength. Different barrier heights are obtained through selection of substrates, graphene doping and electrical tuning. Lower barrier height for graphene side and higher barrier height for silicon side are found to be beneficial for better infrared photoresponse. Through Polyetherimide doping of graphene and back-gated electrical modulation, the responsivity finally reached 5.71 A W-1, which to our knowledge is among the best results for graphene-based infrared photodetectors with graphene adopted as a light-absorption material. It is found that the thermionic emission efficiency of indirect transition in graphene is related to the difference in emissioin barrier height, and the lifetime of photoinduced carriers in the channel can be enhanced by built-in potential. These results lay the foundation for the photodetection applicatioins of graphene/Si heterojunction in the longer-wavelength infrared region.
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Affiliation(s)
- Quan Zhou
- Key Laboratory of Multi-scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing, 400714, People's Republic of China. Department of Electronic and Optical Engineering, Ordnance Engineering College, Shijiazhuang 050003, People's Republic of China
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Hu W, Cong H, Huang W, Huang Y, Chen L, Pan A, Xue C. Germanium/perovskite heterostructure for high-performance and broadband photodetector from visible to infrared telecommunication band. LIGHT, SCIENCE & APPLICATIONS 2019; 8:106. [PMID: 31798845 PMCID: PMC6872564 DOI: 10.1038/s41377-019-0218-y] [Citation(s) in RCA: 52] [Impact Index Per Article: 10.4] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/26/2019] [Revised: 10/17/2019] [Accepted: 11/04/2019] [Indexed: 05/19/2023]
Abstract
A high-performance and broadband heterojunction photodetector has been successfully fabricated. The heterostructure device is based on a uniform and pinhole-free perovskite film constructed on top of a single-crystal germanium layer. The perovskite/germanium photodetector shows enhanced performance and a broad spectrum compared with the single-material-based device. The photon response properties are characterized in detail from the visible to near-infrared spectrum. At an optical fibre communication wavelength of 1550 nm, the heterojunction device exhibits the highest responsivity of 1.4 A/W. The performance is promoted because of an antireflection perovskite coating, the thickness of which is optimized to 150 nm at the telecommunication band. At a visible light wavelength of 680 nm, the device shows outstanding responsivity and detectivity of 228 A/W and 1.6 × 1010 Jones, respectively. These excellent properties arise from the photoconductive gain boost in the heterostructure device. The presented heterojunction photodetector provides a competitive approach for wide-spectrum photodetection from visible to optical communication areas. Based on the distinguished capacity of light detection and harvesting from the visible to near-infrared spectrum, the designed germanium/perovskite heterostructure configuration is believed to provide new building blocks for novel optoelectronic devices.
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Affiliation(s)
- Wei Hu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082 China
| | - Hui Cong
- State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049 China
| | - Wei Huang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082 China
| | - Yu Huang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082 China
| | - Lijuan Chen
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082 China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082 China
| | - Chunlai Xue
- State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049 China
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25
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Peng M, Xie X, Zheng H, Wang Y, Zhuo Q, Yuan G, Ma W, Shao M, Wen Z, Sun X. PbS Quantum Dots/2D Nonlayered CdS xSe 1- x Nanosheet Hybrid Nanostructure for High-Performance Broadband Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2018; 10:43887-43895. [PMID: 30456948 DOI: 10.1021/acsami.8b15406] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/18/2023]
Abstract
Two-dimensional (2D) nonlayered nanomaterials have attracted extensive attention for electronic and optoelectronic applications recently because of their distinct properties. In this work, we first employed a facile one-step method to synthesize 2D nonlayered cadmium sulfide selenide (CdS xSe1- x, x = 0.33) nanosheets with a highly crystalline structure and then we introduced a generic spin-coating approach to fabricate hybrid nanomaterials composed of PbS quantum dots (QDs) and 2D CdS xSe1- x nanosheets and demonstrated their potential for high-performance broadband photodetectors. Compared with pure 2D CdS xSe1- x nanosheet photodetectors, the photoelectric performance of the PbS/CdS xSe1- x hybrid nanostructure is enhanced by 3 orders of magnitude under near-infrared (NIR) light illumination and maintains its performance in the visible (Vis) range. The photodetector exhibits a broadband response range from Vis to NIR with an ultrahigh light-to-dark current ratio (3.45 × 106), a high spectral responsivity (1.45 × 103 A/W), and high detectivity (1.05 × 1015 Jones). The proposed QDs/2D nonlayered hybrid nanostructure-based photodetector paves a promising way for next-generation high-performance broadband optoelectronic devices.
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Affiliation(s)
- Mingfa Peng
- Institute of Functional Nano and Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-based Functional Materials and Devices , Soochow University , Suzhou , Jiangsu 215123 , P. R. China
| | - Xinkai Xie
- Institute of Functional Nano and Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-based Functional Materials and Devices , Soochow University , Suzhou , Jiangsu 215123 , P. R. China
| | - Hechuang Zheng
- Institute of Functional Nano and Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-based Functional Materials and Devices , Soochow University , Suzhou , Jiangsu 215123 , P. R. China
| | - Yongjie Wang
- Institute of Functional Nano and Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-based Functional Materials and Devices , Soochow University , Suzhou , Jiangsu 215123 , P. R. China
| | - Qiqi Zhuo
- College of Material Science & Engineering , Jiangsu University of Science and Technology , Zhenjiang , Jiangsu 212003 , P. R. China
| | - Guotao Yuan
- Institute of Functional Nano and Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-based Functional Materials and Devices , Soochow University , Suzhou , Jiangsu 215123 , P. R. China
| | - Wanli Ma
- Institute of Functional Nano and Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-based Functional Materials and Devices , Soochow University , Suzhou , Jiangsu 215123 , P. R. China
| | - Mingwang Shao
- Institute of Functional Nano and Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-based Functional Materials and Devices , Soochow University , Suzhou , Jiangsu 215123 , P. R. China
| | - Zhen Wen
- Institute of Functional Nano and Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-based Functional Materials and Devices , Soochow University , Suzhou , Jiangsu 215123 , P. R. China
| | - Xuhui Sun
- Institute of Functional Nano and Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-based Functional Materials and Devices , Soochow University , Suzhou , Jiangsu 215123 , P. R. China
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26
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Lee JH, Lee WW, Yang DW, Chang WJ, Kwon SS, Park WI. Anomalous Photovoltaic Response of Graphene-on-GaN Schottky Photodiodes. ACS APPLIED MATERIALS & INTERFACES 2018; 10:14170-14174. [PMID: 29620853 DOI: 10.1021/acsami.8b02043] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/20/2023]
Abstract
Graphene has attracted great attention as an alternative to conventional metallic or transparent conducting electrodes. Despite its similarities with conventional electrodes, recent studies have shown that a single-atom layer of graphene possesses unique characteristics, such as a tunable work function and transparencies for electric potential, reactivity, and wetting. Nevertheless, a systematic analysis of graphene and semiconductor junction characteristics has not yet been carried out. Here, we report the photoresponse characteristics of graphene-on-GaN Schottky junction photodiodes (Gr-GaN SJPDs), showing a typical rectifying behavior and distinct photovoltaic and photoelectric responses. Following the initial abrupt response to UV illumination, the Gr-GaN SJPDs exhibited a distinct difference in photocarrier dynamics depending on the applied bias voltage, which is characterized by either a negative or positive change in photocurrent with time. We propose underlying mechanisms for the anomalous photocarrier dynamics based on the interplay between electrostatic molecular interactions over the one-atom-thick graphene and GaN junction and trapped photocarriers at the defect states in the GaN thin film.
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Affiliation(s)
- Jae Hyung Lee
- Division of Materials Science and Engineering , Hanyang University , Seoul 04763 , Republic of Korea
| | - Won Woo Lee
- Division of Materials Science and Engineering , Hanyang University , Seoul 04763 , Republic of Korea
| | - Dong Won Yang
- Division of Materials Science and Engineering , Hanyang University , Seoul 04763 , Republic of Korea
| | - Won Jun Chang
- Division of Materials Science and Engineering , Hanyang University , Seoul 04763 , Republic of Korea
| | - Sun Sang Kwon
- Division of Materials Science and Engineering , Hanyang University , Seoul 04763 , Republic of Korea
| | - Won Il Park
- Division of Materials Science and Engineering , Hanyang University , Seoul 04763 , Republic of Korea
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27
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Cong H, Yang F, Xue C, Yu K, Zhou L, Wang N, Cheng B, Wang Q. Multilayer Graphene-GeSn Quantum Well Heterostructure SWIR Light Source. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:e1704414. [PMID: 29611368 DOI: 10.1002/smll.201704414] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/19/2017] [Revised: 02/14/2018] [Indexed: 06/08/2023]
Abstract
The problem of light source always prevents silicon-based photonics from achieving a final integration. Although some optical pump lasers have been reported in recent years, an electrical pumping laser is considered as the ultimate solution. To fabricate a Si-based laser, there are some crucial obstacles that need to be solved such as difficulties in material epitaxy, light absorption by metal electrodes, and compatibility with the existing complementary metal-oxide-semiconductor transistor process. Here, a multilayer graphene and GeSn/Ge quantum well (QW) heterostructure is designed and fabricated as a Si-based light source. Specially designed Ge0.9 Sn0.1 /Ge QWs are used as active layer, which achieves a photoluminescence (PL) peak at 2050 nm. Graphene, which has a high transmittance for all bands of light, lessens the burden of growing thick cladding layer and perfectly breaks the deadlock of light disappearance in metal contacts. The electroluminescence (EL) spectrum of the device is achieved at a peak of 2100 nm under an injection current density of 100 A cm-2 . Both the PL and EL measurements show the heterostructure has good performance as a short-wave infrared (SWIR) light source. Therefore, the results provides a good alternative for the light source in silicon-based photonics.
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Affiliation(s)
- Hui Cong
- State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Fan Yang
- State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Chunlai Xue
- State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Kai Yu
- State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Lin Zhou
- State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Nan Wang
- State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Buwen Cheng
- State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Qiming Wang
- State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
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28
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Kallatt S, Nair S, Majumdar K. Asymmetrically Encapsulated Vertical ITO/MoS 2 /Cu 2 O Photodetector with Ultrahigh Sensitivity. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:1702066. [PMID: 29171710 DOI: 10.1002/smll.201702066] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/18/2017] [Revised: 09/20/2017] [Indexed: 06/07/2023]
Abstract
Strong light absorption, coupled with moderate carrier transport properties, makes 2D layered transition metal dichalcogenide semiconductors promising candidates for low intensity photodetection applications. However, the performance of these devices is severely bottlenecked by slow response with persistent photocurrent due to long lived charge trapping, and nonreliable characteristics due to undesirable ambience and substrate effects. Here ultrahigh specific detectivity (D*) of 3.2 × 1014 Jones and responsivity (R) of 5.77 × 104 A W-1 are demonstrated at an optical power density (Pop ) of 0.26 W m-2 and external bias (Vext ) of -0.5 V in an indium tin oxide/MoS2 /copper oxide/Au vertical multi-heterojunction photodetector exhibiting small carrier transit time. The active MoS2 layer being encapsulated by carrier collection layers allows us to achieve repeatable characteristics over large number of cycles with negligible trap assisted persistent photocurrent. A large D* > 1014 Jones at zero external bias is also achieved due to the built-in field of the asymmetric photodetector. Benchmarking the performance against existing reports in literature shows a viable pathway for achieving reliable and highly sensitive photodetectors for ultralow intensity photodetection applications.
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Affiliation(s)
- Sangeeth Kallatt
- Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore, 560012, India
- Center for NanoScience and Engineering, Indian Institute of Science, Bangalore, 560012, India
| | - Smitha Nair
- Center for NanoScience and Engineering, Indian Institute of Science, Bangalore, 560012, India
| | - Kausik Majumdar
- Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore, 560012, India
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29
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Du L, Wang H, Ding Y. A germanium(II) aminopyridinato compound and its potential as a CVD precursor. Polyhedron 2017. [DOI: 10.1016/j.poly.2017.06.031] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/19/2022]
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