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Park T, Han Y, Lee S, Kim YH, Yoo H. Wavelength-Dependent Multistate Programmability and Optoelectronic Logic-in-Memory Operation from the Narrow Bandgap pNDI-SVS Floating Gate. NANO LETTERS 2024; 24:9544-9552. [PMID: 38968419 DOI: 10.1021/acs.nanolett.4c01998] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/07/2024]
Abstract
This study introduces wavelength-dependent multistate programmable optoelectronic logic-in-memory (OLIM) operation using a broadband photoresponsive pNDI-SVS floating gate. The distinct optical absorption of the relatively large bandgap DNTT channel (2.6 eV) and the narrow bandgap pNDI-SVS floating gate (1.37 eV) lead to varying light-induced charge carrier accumulation across different wavelengths. In the proposed OLIM device comprising the p-type pNDI-SVS-based optoelectronic memory (POEM) transistor and an IGZO n-type transistor, we achieve controllable output voltage signals by modulating the pull-up performance through optical wavelength and applied bias manipulation. Real-time OLIM operation yields four discernible output values. The device's high mechanical flexibility and seamless surface integration among the paper substrate, pNDI-SVS, parylene gate dielectric, and DNTT region render it compatible for integration into paper-based optoelectronics. Our flexible POEM device on name card substrates demonstrates stable operational performance, with minimal variation (8%) after 100 cycles of repeated memory operation, remaining reliable across various angle measurements.
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Affiliation(s)
- Taehyun Park
- SDC Research Group, Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam 13120, Republic of Korea
| | - Youngmin Han
- SDC Research Group, Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam 13120, Republic of Korea
| | - Seonjeong Lee
- Department of Chemistry and RIMA, Gyeongsang National University, Jinju, 660-701 Republic of Korea
| | - Yun-Hi Kim
- Department of Chemistry and RIMA, Gyeongsang National University, Jinju, 660-701 Republic of Korea
| | - Hocheon Yoo
- SDC Research Group, Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam 13120, Republic of Korea
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2
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Bai S, Yang L, Haase K, Wolansky J, Zhang Z, Tseng H, Talnack F, Kress J, Andrade JP, Benduhn J, Ma J, Feng X, Hambsch M, Mannsfeld SCB. Nanographene-Based Heterojunctions for High-Performance Organic Phototransistor Memory Devices. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2300057. [PMID: 36995051 DOI: 10.1002/advs.202300057] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/04/2023] [Revised: 02/22/2023] [Indexed: 05/27/2023]
Abstract
Organic phototransistors can enable many important applications such as nonvolatile memory, artificial synapses, and photodetectors in next-generation optical communication and wearable electronics. However, it is still a challenge to achieve a big memory window (threshold voltage response ∆Vth ) for phototransistors. Here, a nanographene-based heterojunction phototransistor memory with large ∆Vth responses is reported. Exposure to low intensity light (25.7 µW cm-2 ) for 1 s yields a memory window of 35 V, and the threshold voltage shift is found to be larger than 140 V under continuous light illumination. The device exhibits both good photosensitivity (3.6 × 105 ) and memory properties including long retention time (>1.5 × 105 s), large hysteresis (45.35 V), and high endurance for voltage-erasing and light-programming. These findings demonstrate the high application potential of nanographenes in the field of optoelectronics. In addition, the working principle of these hybrid nanographene-organic structured heterojunction phototransistor memory devices is described which provides new insight into the design of high-performance organic phototransistor devices.
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Affiliation(s)
- Shaoling Bai
- Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany
- Faculty of Electrical and Computer Engineering, Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany
| | - Lin Yang
- Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany
- Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany
| | - Katherina Haase
- Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany
- Faculty of Electrical and Computer Engineering, Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany
| | - Jakob Wolansky
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Nöthnitzer Str. 61, 01187, Dresden, Germany
| | - Zongbao Zhang
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Nöthnitzer Str. 61, 01187, Dresden, Germany
| | - Hsin Tseng
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Nöthnitzer Str. 61, 01187, Dresden, Germany
| | - Felix Talnack
- Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany
- Faculty of Electrical and Computer Engineering, Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany
| | - Joshua Kress
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Nöthnitzer Str. 61, 01187, Dresden, Germany
| | - Jonathan Perez Andrade
- Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany
- Faculty of Electrical and Computer Engineering, Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany
- Leibniz Institute for Solid State and Materials Research, Helmholtzstraße 20, 01069, Dresden, Germany
| | - Johannes Benduhn
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Nöthnitzer Str. 61, 01187, Dresden, Germany
| | - Ji Ma
- Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany
- Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle, Germany
| | - Xinliang Feng
- Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany
- Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle, Germany
| | - Mike Hambsch
- Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany
| | - Stefan C B Mannsfeld
- Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany
- Faculty of Electrical and Computer Engineering, Technische Universität Dresden, Helmholtzstraße 18, 01062, Dresden, Germany
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Weng YH, Lin YC, Ho JC, Yang WC, Lin BH, Liu CL, Chen WC. High-Performance Phototransistor Memory with an Ultrahigh Memory Ratio Conferred Using Hydrogen-Bonded Supramolecular Electrets. ACS APPLIED MATERIALS & INTERFACES 2023; 15:19258-19269. [PMID: 36883569 DOI: 10.1021/acsami.2c22501] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
As the research of photonic electronics thrives, the enhanced efficacy from an optic unit cell can considerably improve the performance of an optoelectronic device. In this regard, organic phototransistor memory with a fast programming/readout and a distinguished memory ratio produces an advantageous outlook to fulfill the demand for advanced applications. In this study, a hydrogen-bonded supramolecular electret is introduced into the phototransistor memory, which comprises porphyrin dyes, meso-tetra(4-aminophenyl)porphine, meso-tetra(p-hydroxyphenyl)porphine, and meso-tetra(4-carboxyphenyl)porphine (TCPP), and insulated polymers, poly(4-vinylpyridine) and poly(4-vinylphenol) (PVPh). To combine the optical absorption of porphyrin dyes, dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) is selected as a semiconducting channel. The porphyrin dyes serve as the ambipolar trapping moiety, while the insulated polymers form a barrier to stabilize the trapped charges by forming hydrogen-bonded supramolecules. We find that the hole-trapping capability of the device is determined by the electrostatic potential distribution in the supramolecules, whereas the electron-trapping capability and the surface proton doping originated from hydrogen bonding and interfacial interactions. Among them, PVPh:TCPP with an optimal hydrogen bonding pattern in the supramolecular electret produces the highest memory ratio of 1.12 × 108 over 104 s, which is the highest performance among the reported achievements. Our results suggest that the hydrogen-bonded supramolecular electret can enhance the memory performance by fine-tuning their bond strength and cast light on a potential pathway to future photonic electronics.
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Affiliation(s)
- Yi-Hsun Weng
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Yan-Cheng Lin
- Department of Chemical Engineering, National Cheng Kung University, Tainan 70101, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Jin-Chieh Ho
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Wei-Chen Yang
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Bi-Hsuan Lin
- National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
| | - Cheng-Liang Liu
- Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Wen-Chang Chen
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
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Nawaz A, Merces L, Ferro LMM, Sonar P, Bufon CCB. Impact of Planar and Vertical Organic Field-Effect Transistors on Flexible Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2204804. [PMID: 36124375 DOI: 10.1002/adma.202204804] [Citation(s) in RCA: 17] [Impact Index Per Article: 17.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/27/2022] [Revised: 09/13/2022] [Indexed: 06/15/2023]
Abstract
The development of flexible and conformable devices, whose performance can be maintained while being continuously deformed, provides a significant step toward the realization of next-generation wearable and e-textile applications. Organic field-effect transistors (OFETs) are particularly interesting for flexible and lightweight products, because of their low-temperature solution processability, and the mechanical flexibility of organic materials that endows OFETs the natural compatibility with plastic and biodegradable substrates. Here, an in-depth review of two competing flexible OFET technologies, planar and vertical OFETs (POFETs and VOFETs, respectively) is provided. The electrical, mechanical, and physical properties of POFETs and VOFETs are critically discussed, with a focus on four pivotal applications (integrated logic circuits, light-emitting devices, memories, and sensors). It is pointed out that the flexible function of the relatively newer VOFET technology, along with its perspective on advancing the applicability of flexible POFETs, has not been reviewed so far, and the direct comparison regarding the performance of POFET- and VOFET-based flexible applications is most likely absent. With discussions spanning printed and wearable electronics, materials science, biotechnology, and environmental monitoring, this contribution is a clear stimulus to researchers working in these fields to engage toward the plentiful possibilities that POFETs and VOFETs offer to flexible electronics.
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Affiliation(s)
- Ali Nawaz
- Center for Sensors and Devices, Bruno Kessler Foundation (FBK), Trento, 38123, Italy
| | - Leandro Merces
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, São Paulo, 13083-100, Brazil
| | - Letícia M M Ferro
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, São Paulo, 13083-100, Brazil
- Institute of Chemistry, University of Campinas, Campinas, São Paulo, 13083-970, Brazil
| | - Prashant Sonar
- School of Chemistry and Physics, Queensland University of Technology (QUT), Brisbane, QLD, 4000, Australia
- Centre for Materials Science, Queensland University of Technology, 2 George Street, Brisbane, QLD, 4000, Australia
| | - Carlos C B Bufon
- MackGraphe - Graphene and Nanomaterials Research Center, Mackenzie Presbyterian Institute, São Paulo, 01302-907, Brazil
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5
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Shin J, Yoo H. Photogating Effect-Driven Photodetectors and Their Emerging Applications. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:882. [PMID: 36903759 PMCID: PMC10005329 DOI: 10.3390/nano13050882] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/19/2023] [Revised: 02/15/2023] [Accepted: 02/24/2023] [Indexed: 06/18/2023]
Abstract
Rather than generating a photocurrent through photo-excited carriers by the photoelectric effect, the photogating effect enables us to detect sub-bandgap rays. The photogating effect is caused by trapped photo-induced charges that modulate the potential energy of the semiconductor/dielectric interface, where these trapped charges contribute an additional electrical gating-field, resulting in a shift in the threshold voltage. This approach clearly separates the drain current in dark versus bright exposures. In this review, we discuss the photogating effect-driven photodetectors with respect to emerging optoelectrical materials, device structures, and mechanisms. Representative examples that reported the photogating effect-based sub-bandgap photodetection are revisited. Furthermore, emerging applications using these photogating effects are highlighted. The potential and challenging aspects of next-generation photodetector devices are presented with an emphasis on the photogating effect.
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6
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Chiang YC, Yang WC, Hung CC, Ercan E, Chiu YC, Lin YC, Chen WC. Fully Photoswitchable Phototransistor Memory Comprising Perovskite Quantum Dot-Based Hybrid Nanocomposites as a Photoresponsive Floating Gate. ACS APPLIED MATERIALS & INTERFACES 2023; 15:1675-1684. [PMID: 36562738 DOI: 10.1021/acsami.2c18064] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Tremendous research efforts have been dedicated into the field of photoresponsive nonvolatile memory devices owing to their advantages of fast transmitting speed, low latency, and power-saving property that are suitable for replacing current electrical-driven electronics. However, the reported memory devices still rely on the assistance of gate bias to program them, and a real fully photoswitchable transistor memory is still rare. Herein, we report a phototransistor memory device comprising polymer/perovskite quantum dot (QD) hybrid nanocomposites as a photoresponsive floating gate. The perovskite QDs offer an effective discreteness with an excellent photoresponse that are suitable for photogate application. In addition, a series of ultraviolet (UV)-sensitive insulating polymer hosts were designed to investigate the effect of UV light on the memory behavior. We found that a fully photoswitchable memory device was fulfilled by using the independent and sequential photoexcitation between a UV-sensitive polymer host and a visible light-sensitive QD photogates, which produced decent photoresponse, memory switchability, and highly stable memory retention with a memory ratio of 104 over 104 s. This study not only unraveled the mystery in the fully photoswitchable functionality of nonvolatile memory but also enlightened their potential in the next-generation electronics for light-fidelity application.
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Affiliation(s)
- Yun-Chi Chiang
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Wei-Chen Yang
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Chih-Chien Hung
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Ender Ercan
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Yu-Cheng Chiu
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
- Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan
| | - Yan-Cheng Lin
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
- Department of Chemical Engineering, National Cheng Kung University, Tainan City 70101, Taiwan
| | - Wen-Chang Chen
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
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7
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Wang Y, Gong Q, Pun SH, Lee HK, Zhou Y, Xu J, Miao Q. Robust Radical Cations of Hexabenzoperylene Exhibiting High Conductivity and Enabling an Organic Nonvolatile Optoelectronic Memory. J Am Chem Soc 2022; 144:16612-16619. [PMID: 36043840 DOI: 10.1021/jacs.2c06835] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Herein, we report robust π-conjugated radical cations resulting from the oxidation of hexabenzoperylene (HBP) derivatives, HBP-B and HBP-H, which have butyl and hexyl groups, respectively, attached to the same twisted double helicene π-backbone. The radical cation of HBP-B was successfully crystallized in the form of hexafluorophosphate, which exhibited conductivity as high as 1.32 ± 0.04 S cm-1. Photochemical oxidation of HBP-H by molecular oxygen led to the formation of its radical cation in the solid state, as found with different techniques. This allowed the organic field effect transistor of HBP-H to function as a nonvolatile optoelectronic memory, with the memory switching contrast above 103 and long-term stability without using a floating gate, an electret layer, or photochromic molecules.
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Affiliation(s)
- Yujing Wang
- Department of Chemistry, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China
| | - Qi Gong
- Department of Chemistry, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China
| | - Sai Ho Pun
- Department of Chemistry, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China
| | - Hung Kay Lee
- Department of Chemistry, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China
| | - Yaoqiang Zhou
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China
| | - Jianbin Xu
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China
| | - Qian Miao
- Department of Chemistry, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China
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Ho CH, Lin YC, Yang WC, Ercan E, Chiang YC, Lin BH, Kuo CC, Chen WC. Fast Photoresponsive Phototransistor Memory Using Star-Shaped Conjugated Rod-Coil Molecules as a Floating Gate. ACS APPLIED MATERIALS & INTERFACES 2022; 14:15468-15477. [PMID: 35318845 DOI: 10.1021/acsami.2c00622] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
With the explosive growth in data generation, photomemory capable of multibit data storage is highly desired to enhance the capacity of storage media. To improve the performance of phototransistor memory, an organic-molecule-based electret with an elaborate nanostructure is of great importance because it can enable multibit data storage in a memory device with high stability. In this study, a series of star-shaped rod-coil molecules consisting of perylenediimide (PDI) and biobased solanesol were synthesized in two-armed (PDI-Sol2), four-armed (PDI-Sol4), and six-armed (PDI-Sol6) architectures. Their molecular architecture-morphology relationships were investigated, and phototransistor memory was fabricated and characterized to evaluate the structure-performance relationship of these rod-coil molecules. Accordingly, the memory devices were enabled by photowriting with panchromatic light (405-650 nm) and electrical erasing using a gate bias. The PDI-Sol4-based memory device showed high memory ratios of 10 000 over 10 000 s and a rapid multilevel photoresponse of 50 ms. This achievement is related to the favorable energy-level alignment, isolated nanostructure, and face-on orientation of PDI-Sol4, which eliminated the charge tunneling barrier. The results of this study provide a new strategy for tailoring nanostructures in organic-molecule-based electrets by using a star-shaped rod-coil architecture for high-performance phototransistor memory.
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Affiliation(s)
- Cheng-Han Ho
- Institute of Organic and Polymeric Materials, National Taipei University of Technology, Taipei 10608, Taiwan
| | - Yan-Cheng Lin
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center of Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Wei-Chen Yang
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Ender Ercan
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center of Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Yun-Chi Chiang
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Bi-Hsuan Lin
- National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
| | - Chi-Ching Kuo
- Institute of Organic and Polymeric Materials, National Taipei University of Technology, Taipei 10608, Taiwan
| | - Wen-Chang Chen
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center of Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
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Song K, Zhou P, Zong L, Yang Z, Li H, Chen Z. The visible light-triggered nonvolatile memory performances in melamine-decorated <110>-oriented lead halide perovskites: a photo-responsive structural evolution insight. CHINESE CHEM LETT 2022. [DOI: 10.1016/j.cclet.2022.04.062] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
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10
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Lin YC, Yang WC, Chiang YC, Chen WC. Recent Advances in Organic Phototransistors: Nonvolatile Memory, Artificial Synapses, and Photodetectors. SMALL SCIENCE 2022. [DOI: 10.1002/smsc.202100109] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022] Open
Affiliation(s)
- Yan-Cheng Lin
- Department of Chemical Engineering National Taiwan University Taipei 10617 Taiwan
- Advanced Research Center of Green Materials Science and Technology National Taiwan University Taipei 10617 Taiwan
| | - Wei-Chen Yang
- Department of Chemical Engineering National Taiwan University Taipei 10617 Taiwan
| | - Yun-Chi Chiang
- Department of Chemical Engineering National Taiwan University Taipei 10617 Taiwan
| | - Wen-Chang Chen
- Department of Chemical Engineering National Taiwan University Taipei 10617 Taiwan
- Advanced Research Center of Green Materials Science and Technology National Taiwan University Taipei 10617 Taiwan
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11
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Lee S, Kim S, Yoo H. Contribution of Polymers to Electronic Memory Devices and Applications. Polymers (Basel) 2021; 13:3774. [PMID: 34771332 PMCID: PMC8588209 DOI: 10.3390/polym13213774] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/14/2021] [Revised: 10/26/2021] [Accepted: 10/29/2021] [Indexed: 11/23/2022] Open
Abstract
Electronic memory devices, such as memristors, charge trap memory, and floating-gate memory, have been developed over the last decade. The use of polymers in electronic memory devices enables new opportunities, including easy-to-fabricate processes, mechanical flexibility, and neuromorphic applications. This review revisits recent efforts on polymer-based electronic memory developments. The versatile contributions of polymers for emerging memory devices are classified, providing a timely overview of such unconventional functionalities with a strong emphasis on the merits of polymer utilization. Furthermore, this review discusses the opportunities and challenges of polymer-based memory devices with respect to their device performance and stability for practical applications.
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Affiliation(s)
| | | | - Hocheon Yoo
- Department of Electronic Engineering, Gachon University, Seongnam 1342, Korea; (S.L.); (S.K.)
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12
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Jin R, Shi K, Qiu B, Huang S. Photoinduced-reset and multilevel storage transistor memories based on antimony-doped tin oxide nanoparticles floating gate. NANOTECHNOLOGY 2021; 33:025201. [PMID: 34619668 DOI: 10.1088/1361-6528/ac2dc5] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/25/2021] [Accepted: 10/06/2021] [Indexed: 06/13/2023]
Abstract
Recently, antimony-doped tin oxide nanoparticles (ATO NPs) have been widely used in the fields of electronics, photonics, photovoltaics, sensing, and other fields because of their good conductivity, easy synthesis, excellent chemical stability, high mechanical strength, good dispersion and low cost. Herein, for the first time, a novel nonvolatile transistor memory device is fabricated using ATO NPs as charge trapping sites to enhance the memory performance. The resulting organic nano-floating gate memory (NFGM) device exhibits outstanding memory properties, including tremendous memory window (∼85 V), superhigh memory on/off ratio (∼109), long data retention (over 10 years) and eminent multilevel storage behavior, which are among the optimal performances in NFGM devices based on organic field effect transistors. Additionally, the device displays photoinduced-reset characteristic with low energy consumption erasing operation. This study provides novel avenues for the manufacture of simple and low-cost data storage devices with outstanding memory performance, multilevel storage behavior and suitability as platforms for integrated circuits.
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Affiliation(s)
- Risheng Jin
- College of Physics and Electronic Information Engineering, Zhejiang Normal University, Jinhua, Zhejiang 321004, People's Republic of China
| | - Keli Shi
- College of Physics and Electronic Information Engineering, Zhejiang Normal University, Jinhua, Zhejiang 321004, People's Republic of China
| | - Beibei Qiu
- College of Physics and Electronic Information Engineering, Zhejiang Normal University, Jinhua, Zhejiang 321004, People's Republic of China
| | - Shihua Huang
- College of Physics and Electronic Information Engineering, Zhejiang Normal University, Jinhua, Zhejiang 321004, People's Republic of China
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Chen MN, Chang SW, Prakoso SP, Li YT, Chen KL, Chiu YC. Unveiling the Photoinduced Recovery Mystery in Conjugated Polymer-Based Transistor Memory. ACS APPLIED MATERIALS & INTERFACES 2021; 13:44656-44662. [PMID: 34506100 DOI: 10.1021/acsami.1c12742] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
A straightforward mechanism for the photorecovery behavior of photoresponsive nonvolatile organic field-effect transistor (OFET) memories is proposed by employing a commercially available conjugated polymer, the poly(9,9-dioctylfluorene) (PFO), the conjugated monomer fluorene (FO), and the nonconjugated poly(vinyl alcohol) (PVA), as charge storage layers beneath the semiconducting pentacene layer. As photoexcitons are generated upon light exposure, the respective charges recombine with the trapped charges in electrets and neutralize the memory device. However, whether the excitons are generated in the semiconducting layer or the electret part, the origin that mainly governs the photorecovery behavior remains unclear. In this study, we show that when PVA, a nonphotoactive electret, replaces PFO the photorecovery behavior is totally absent, and it confirms the photorecovery behavior dominated by the excitons in situ generated in a charged electret. Moreover, PFO as a photoactive electret, exhibiting an excellent hole-trapping ability over 24 h in the dark and high Ion/Ioff current ratio of 108, has successfully demonstrated rapid photoinduced recovery under UV light. The devices also display a reliable switching ability between electrical charge trapping and optical recovery cycles for optical-recording application. This report presents a clear understanding behind photorecovery phenomena that demonstrates useful guidance to boost the development of photoactive OFET memories based on conjugated polymer electrets.
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Affiliation(s)
- Mei-Nung Chen
- Department of Chemical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Road, Da'an District, Taipei City 10607, Taiwan
| | - Shu-Wei Chang
- Department of Chemical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Road, Da'an District, Taipei City 10607, Taiwan
| | - Suhendro Purbo Prakoso
- Department of Chemical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Road, Da'an District, Taipei City 10607, Taiwan
| | - Yen-Ting Li
- Department of Chemical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Road, Da'an District, Taipei City 10607, Taiwan
| | - Kai-Lin Chen
- Department of Chemical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Road, Da'an District, Taipei City 10607, Taiwan
| | - Yu-Cheng Chiu
- Department of Chemical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Road, Da'an District, Taipei City 10607, Taiwan
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14
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Ercan E, Lin Y, Chen C, Fang Y, Yang W, Yang Y, Chen W. Realizing fast photoinduced recovery with polyfluorene‐
block
‐poly
(vinylphenyl oxadiazole) block copolymers as electret in photonic transistor memory devices. JOURNAL OF POLYMER SCIENCE 2021. [DOI: 10.1002/pol.20210393] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022]
Affiliation(s)
- Ender Ercan
- Department of Chemical Engineering National Taiwan University Taipei Taiwan
- Advanced Research Center of Green Materials Science and Technology National Taiwan University Taipei Taiwan
| | - Yan‐Cheng Lin
- Department of Chemical Engineering National Taiwan University Taipei Taiwan
- Advanced Research Center of Green Materials Science and Technology National Taiwan University Taipei Taiwan
| | - Chun‐Kai Chen
- Department of Chemical Engineering National Taiwan University Taipei Taiwan
| | - Yi‐Kai Fang
- Institute of Polymer Science and Engineering National Taiwan University Taipei Taiwan
| | - Wei‐Chen Yang
- Department of Chemical Engineering National Taiwan University Taipei Taiwan
| | - Yun‐Fang Yang
- Department of Chemical Engineering National Taiwan University Taipei Taiwan
| | - Wen‐Chang Chen
- Department of Chemical Engineering National Taiwan University Taipei Taiwan
- Advanced Research Center of Green Materials Science and Technology National Taiwan University Taipei Taiwan
- Institute of Polymer Science and Engineering National Taiwan University Taipei Taiwan
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15
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Lvov AG, Herder M, Grubert L, Hecht S, Shirinian VZ. Photocontrollable Modulation of Frontier Molecular Orbital Energy Levels of Cyclopentenone-Based Diarylethenes. J Phys Chem A 2021; 125:3681-3688. [PMID: 33885299 DOI: 10.1021/acs.jpca.1c01836] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
Photoswitchable diarylethenes provide a unique opportunity to optically modulate frontier molecular orbital energy levels, thereby opening an avenue for the design of electronic devices such as photocontrollable organic field-effect transistors (OFETs). In the present work, the absolute position of the frontier orbital levels of nonsymmetrical diarylethenes based on a cyclopentenone bridge has been studied using cyclic voltammetry and density functional theory (DFT) calculations. It has been shown that varying heteroaromatic substituents make it possible to change the absolute positions of the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) of both diarylethene photoisomers. The data obtained are used to refine the operation mechanism of the previously developed OFET devices, employing the cyclopentenone-derived diarylethenes at the dielectric/semiconductor interface.
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Affiliation(s)
- Andrey G Lvov
- A. E. Favorsky Irkutsk Institute of Chemistry, Siberian Branch of the Russian Academy of Sciences, 1 Favorsky Street, Irkutsk 664033, Russian Federation.,Irkutsk National Research Technical University, 83, Lermontov Street, Irkutsk 664074, Russian Federation
| | - Martin Herder
- Department of Chemistry and IRIS Adlershof, Humboldt-Universität zu Berlin, Brook-Taylor-Str. 2, 12489 Berlin, Germany
| | - Lutz Grubert
- Department of Chemistry and IRIS Adlershof, Humboldt-Universität zu Berlin, Brook-Taylor-Str. 2, 12489 Berlin, Germany
| | - Stefan Hecht
- Department of Chemistry and IRIS Adlershof, Humboldt-Universität zu Berlin, Brook-Taylor-Str. 2, 12489 Berlin, Germany.,DWI-Leibniz Institute for Interactive Materials, Forckenbeckstr. 50, 52074 Aachen, Germany.,Institute of Technical and Macromolecular Chemistry, RWTH Aachen University, Worringer Weg 2, 52074 Aachen, Germany
| | - Valerii Z Shirinian
- N. D. Zelinsky Institute of Organic Chemistry, Russian Academy of Sciences, 47, Leninsky prosp, 119991 Moscow, Russian Federation
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16
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Yang WC, Lin YC, Liao MY, Hsu LC, Lam JY, Chuang TH, Li GS, Yang YF, Chueh CC, Chen WC. Comprehensive Non-volatile Photo-programming Transistor Memory via a Dual-Functional Perovskite-Based Floating Gate. ACS APPLIED MATERIALS & INTERFACES 2021; 13:20417-20426. [PMID: 33886254 DOI: 10.1021/acsami.1c03402] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Photonic transistor memory has received increasing attention as next-generation optoelectronic devices for light fidelity (Li-Fi) application due to the attractive advantages of ultra-speed, high security, and low power consumption. However, most transistor-type photonic memories developed to date still rely on electrical bias for operation, imposing certain limits on data transmission efficiency and energy consumption. In this study, the dual manipulation of "photo-writing" and "photo-erasing" of a novel photonic transistor memory is successfully realized by cleverly utilizing the complementary light absorption between the photoactive material, n-type BPE-PTCDI, in the active channel and the hybrid floating gate, CH3NH3PbBr3/poly(2-vinylpyridine). The fabricated device not only can be operated under the full spectrum but also shows stable switching cycles of photo-writing (PW)-reading (R)-photo-erasing (PE)-reading (R) (PW-R-PE-R) with a high memory ratio of ∼104, and the memory characteristics possess a stable long-term retention of >104 s. Notably, photo-erasing only requires 1 s light illumination. Due to the fully optical functionality, the rigid gate electrode is removed and a novel two-terminal flexible photonic memory is fabricated. The device not only exhibits stable electrical performance after 1000 bending cycles but also manifests a multilevel functional behavior, demonstrating a promising potential for the future development of photoactive electronic devices.
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Affiliation(s)
- Wei-Chen Yang
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Yan-Cheng Lin
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Ming-Yun Liao
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Li-Che Hsu
- Institute of Polymer Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Jeun-Yan Lam
- Institute of Polymer Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Tsung-Han Chuang
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Guan-Syuan Li
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Yun-Fang Yang
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Chu-Chen Chueh
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Wen-Chang Chen
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
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17
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Wang Y, Kang L, Liu Z, Wan Z, Yin J, Gao X, Xia Y, Liu Z. Enhancement of Memory Properties of Pentacene Field-Effect Transistor by the Reconstruction of an Inner Vertical Electric Field with an n-Type Semiconductor Interlayer. ACS APPLIED MATERIALS & INTERFACES 2021; 13:13452-13458. [PMID: 33719412 DOI: 10.1021/acsami.0c19603] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Organic field-effect transistors (OFETs) as nonvolatile memory units are essential for lightweight and flexible electronics, yet the practical application remains a great challenge. The positively charged defects in pentacene film at the interface between pentacene and polymer caused by environmental conditions, as revealed by theoretical and experimental research works, result in unacceptable high programming/erasing (P/E) gate voltages in pentacene OFETs with polymer charge-trapping dielectric. Here, we report a pentacene OFET in which an n-type semiconductor layer was intercalated between a polymer and a blocking insulator. In this structure, the hole barrier caused by the defect layer can be adjusted by the thickness and charge-carrier density of the n-type semiconductor interlayer based on the electrostatic induction theory. This idea was implemented in an OFET structure Cu/pentacene/poly(2-vinyl naphthalene) (PVN)/ZnO/SiO2/Si(p+), which shows low P/E gate voltages, large field-effect mobility (0.73 cm2 V-1 s-1), fast P/E speeds (responding to a pulse width of 5 × 10-4 s), and long retention time in air.
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Affiliation(s)
- Yiru Wang
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, People's Republic of China
| | - Limin Kang
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, People's Republic of China
| | - Zhenliang Liu
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, People's Republic of China
| | - Zuteng Wan
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, People's Republic of China
| | - Jiang Yin
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, People's Republic of China
| | - Xu Gao
- Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou 215123, People's Republic of China
| | - Yidong Xia
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, People's Republic of China
| | - Zhiguo Liu
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, National Laboratory of Solid State Microstructures and Collaborative Innovation Center of Advanced Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, People's Republic of China
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18
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The electric memory properties of azo-chalcone derivatives based on different film forming processes. J Mol Struct 2021. [DOI: 10.1016/j.molstruc.2020.129480] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022]
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19
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Pei J, Wu X, Huo J, Liu WJ, Zhang DW, Ding SJ. High-bandwidth light inputting multilevel photoelectric memory based on thin-film transistor with a floating gate of CsPbBr 3/CsPbI 3 blend quantum dots. NANOTECHNOLOGY 2021; 32:095204. [PMID: 33137802 DOI: 10.1088/1361-6528/abc6e0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The electronic-photonic convergent systems can overcome the data transmission bottleneck for microchips by enabling processor and memory chips with high-bandwidth optical input/output. However, current silicon-based electronic-photonic systems require various functional devices/components to convert high-bandwidth optical signals into electrical ones, thus making further integrations of sophisticated systems rather difficult. Here, we demonstrate thin-film transistor-based photoelectric memories employing CsPbBr3/CsPbI3 blend perovskite quantum dots (PQDs) as a floating gate, and multilevel memory cells are achieved under programming and erasing modes, respectively, by imputing high-bandwidth optical signals. For different bandwidth light input (i.e. 500-550, 575-650 and 675-750 nm) with the same intensity, three levels of programming window (i.e. 3.7, 1.9 and 0.8 V) and erasing window (i.e. -1.9, -0.6 and -0.1 V) are obtained under electrical pulses, respectively. This is because the blend PQDs have two different bandgaps, and different amounts of photo-generated carriers can be produced for different wavelength optical inputs. It is noticed that the 675-750 nm light inputs have no effects on both programming and erasing windows because of no photo-carriers generation. Four memory states are demonstrated, showing enough large gaps (1.12-5.61 V) between each other, good data retention and programming/erasing endurance. By inputting different optical signals, different memory states can be switched easily. Therefore, this work directly demonstrates high-bandwidth light inputting multilevel memory cells for novel electronic-photonic systems.
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Affiliation(s)
- Junxiang Pei
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Xiaohan Wu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Jingyong Huo
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Wen-Jun Liu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - David Wei Zhang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Shi-Jin Ding
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
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20
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Li Q, Li T, Zhang Y, Zhao H, Li J, Yao J. Dual-functional optoelectronic memories based on ternary hybrid floating gate layers. NANOSCALE 2021; 13:3295-3303. [PMID: 33533792 DOI: 10.1039/d0nr09066b] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Optoelectronic memories based on organic field-effect transistors (OFETs) have been extensively investigated, and great progress has been made in improving memory performance and reducing operating power consumption. Despite these achievements, optoelectronic memories reported so far have only a single storage function, such as light-assisted memory, light writing memory, or light-erasing memory, which may not meet the requirements of multi-functional storage in the future. Here, the dual-functional optoelectronic memories are demonstrated by employing ternary hybrid films as floating gate layers. Integrating the advantages of hole trapping in [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) and photoinduced electron trapping in CsPbBr3 quantum dots (QDs), the dual-functional storages including electric programming holes and light programming electrons can be realized in one device. Owing to the complementary charge trapping advantages in CsPbBr3 QDs and PCBM, the devices also show a short light erasing time of 0.05 s and low erasing gate bias within -35 V. In addition, the devices exhibit decent endurance for 500 continuous light programming-reading-electric programming-reading cycling tests and admirable electron and hole retention time of 10 000 s with negligible charge leakage. This study may offer a feasible path for the development of new-generation memory.
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Affiliation(s)
- Qingyan Li
- Key Laboratory of Opto-Electronics Information Technology, Ministry of Education, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin 300072, China.
| | - Tengteng Li
- Key Laboratory of Opto-Electronics Information Technology, Ministry of Education, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin 300072, China.
| | - Yating Zhang
- Key Laboratory of Opto-Electronics Information Technology, Ministry of Education, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin 300072, China.
| | - Hongliang Zhao
- Key Laboratory of Opto-Electronics Information Technology, Ministry of Education, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin 300072, China.
| | - Jie Li
- Key Laboratory of Opto-Electronics Information Technology, Ministry of Education, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin 300072, China.
| | - Jianquan Yao
- Key Laboratory of Opto-Electronics Information Technology, Ministry of Education, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin 300072, China.
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21
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Jin R, Wang J, Shi K, Qiu B, Ma L, Huang S, Li Z. Multilevel storage and photoinduced-reset memory by an inorganic perovskite quantum-dot/polystyrene floating-gate organic transistor. RSC Adv 2020; 10:43225-43232. [PMID: 35514915 PMCID: PMC9058139 DOI: 10.1039/d0ra08021g] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/19/2020] [Accepted: 11/18/2020] [Indexed: 11/24/2022] Open
Abstract
Inorganic halide perovskite quantum dots (IHP QDs) have been widely studied in optoelectronic devices because of their size-dependent tunable bandgaps, long electron–hole diffusion lengths and excellent absorption properties. Herein, a novel floating-gate organic field-effect transistor memory (FGOFETM) is demonstrated, comprising a floating-gate of IHP QDs embedded in a polystyrene matrix. Notably, the FGOFETM exhibits photoinduced-reset characteristic that allows data removal by photo irradiation. This feature makes low energy-consuming memory and innovative devices possible. The nonvolatile devices also show a large memory window (≈90 V), ultrahigh memory on/off ratio (over 107) and therefore excellent multilevel information storage, in which 4 recognizable non-volatile states and long retention time (up to 10 years) are obtained. This work not only offers an effective guideline of high-performance FGOFETMs, but also shows great potential to realize multilevel data storage under electrical programming and photoinduced-reset processes. A novel floating-gate organic transistor memory with photoinduced-reset and multilevel storage function is demonstrated. The device has a large memory window (≈90 V), ultrahigh memory on/off ratio (over 107) and long retention time (over 10 years).![]()
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Affiliation(s)
- Risheng Jin
- College of Physics and Electronic Information Engineering, Zhejiang Normal University Jinhua Zhejiang 321004 P. R. China
| | - Jin Wang
- Key Laboratory of the Ministry of Education for Advanced Catalysis Materials, Zhejiang Normal University Jinhua Zhejiang 321004 P. R. China
| | - Keli Shi
- College of Physics and Electronic Information Engineering, Zhejiang Normal University Jinhua Zhejiang 321004 P. R. China
| | - Beibei Qiu
- College of Physics and Electronic Information Engineering, Zhejiang Normal University Jinhua Zhejiang 321004 P. R. China
| | - Lanchao Ma
- College of Materials Science and Engineering, Beijing Key Laboratory of Special Elastomer Composite Materials, Beijing Institute of Petrochemical Technology Beijing 102617 P. R. China
| | - Shihua Huang
- College of Physics and Electronic Information Engineering, Zhejiang Normal University Jinhua Zhejiang 321004 P. R. China
| | - Zhengquan Li
- Key Laboratory of the Ministry of Education for Advanced Catalysis Materials, Zhejiang Normal University Jinhua Zhejiang 321004 P. R. China
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22
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Chiang YC, Hung CC, Lin YC, Chiu YC, Isono T, Satoh T, Chen WC. High-Performance Nonvolatile Organic Photonic Transistor Memory Devices using Conjugated Rod-Coil Materials as a Floating Gate. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2002638. [PMID: 32700349 DOI: 10.1002/adma.202002638] [Citation(s) in RCA: 26] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/18/2020] [Revised: 06/07/2020] [Indexed: 06/11/2023]
Abstract
A novel approach for using conjugated rod-coil materials as a floating gate in the fabrication of nonvolatile photonic transistor memory devices, consisting of n-type Sol-PDI and p-type C10-DNTT, is presented. Sol-PDI and C10-DNTT are used as dual functions of charge-trapping (conjugated rod) and tunneling (insulating coil), while n-type BPE-PDI and p-type DNTT are employed as the corresponding transporting layers. By using the same conjugated rod in the memory layer and transporting channel with a self-assembled structure, both n-type and p-type memory devices exhibit a fast response, a high current contrast between "Photo-On" and "Electrical-Off" bistable states over 105 , and an extremely low programing driving force of 0.1 V. The fabricated photon-driven memory devices exhibit a quick response to different wavelengths of light and a broadband light response that highlight their promising potential for light-recorder and synaptic device applications.
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Affiliation(s)
- Yun-Chi Chiang
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - Chih-Chien Hung
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei, 10617, Taiwan
| | - Yan-Cheng Lin
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - Yu-Cheng Chiu
- Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei, 10607, Taiwan
| | - Takuya Isono
- Faculty of Engineering, Hokkaido University, Sapporo, 060-8628, Japan
| | - Toshifumi Satoh
- Faculty of Engineering, Hokkaido University, Sapporo, 060-8628, Japan
| | - Wen-Chang Chen
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei, 10617, Taiwan
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23
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Liao MY, Chiang YC, Chen CH, Chen WC, Chueh CC. Two-Dimensional Cs 2Pb(SCN) 2Br 2-Based Photomemory Devices Showing a Photoinduced Recovery Behavior and an Unusual Fully Optically Driven Memory Behavior. ACS APPLIED MATERIALS & INTERFACES 2020; 12:36398-36408. [PMID: 32700518 DOI: 10.1021/acsami.0c10587] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The rapid development of Internet of Things and big data has made the conventional storage devices face the need of reforming. Rather than using electrical pulses to store data in one of two states, photomemory exploiting optical stimulation to store light information emerges as a revolutionary candidate for the optoelectronic community. However, fully optically driven photomemory with fast data transmission speed and outstanding energy saving capability suffers from less exploration. Herein, a transistor-type photomemory using a 2D Cs2Pb(SCN)2Br2/polymer hybrid floating gate is explored and three host polymers, polystyrene, poly(4-vinylphenol), and poly(vinylpyrrolidone) (PVP), are investigated to understand the relationship between polymer matrix selection and memory performance. All devices show a photoinduced recovery memory behavior but with two distinctly different photomemory behaviors. In addition to the demonstration of a regular nonvolatile photomemory showing a high on/off ratio of >106 over 104 s, an unusual fully optically driven memory behavior is intriguingly accomplished in the Cs2Pb(SCN)2Br2/PVP photomemory. Using white light as the driver of programming and a blue laser as the main performer of erasing, this device can be switched between two distinguishable states and possesses acceptable data discriminability, as evidenced by its fully optically driven writing (programing)-reading-erasing-reading switching function that shows an on/off current ratio of 103. This study not only presents the first 2D perovskite-based photomemory but also shows a novel fully optically driven memory that has been rarely reported in the literature.
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Affiliation(s)
- Ming-Yun Liao
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Yun-Chi Chiang
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Chiung-Han Chen
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Wen-Chang Chen
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Chu-Chen Chueh
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
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24
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Obrezkov FA, Dashitsyrenova DD, Lvov AG, Volyniuk DY, Shirinian VZ, Stadler P, Grazulevicius JV, Sariciftci NS, Aldoshin SM, Krayushkin MM, Troshin PA. Light-Sensitive Material Structure-Electrical Performance Relationship for Optical Memory Transistors Incorporating Photochromic Dihetarylethenes. ACS APPLIED MATERIALS & INTERFACES 2020; 12:32987-32993. [PMID: 32583660 DOI: 10.1021/acsami.0c06049] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Photoswitchable organic field-effect transistors (OFETs) with embedded photochromic materials are considered as a promising platform for development of organic optical memory devices. Unfortunately, the operational mechanism of these devices and guidelines for selection of light-sensitive materials are still poorly explored. In the present work, a series of photochromic dihetarylethenes with a cyclopentenone bridge moiety were investigated as a dielectric/semiconductor interlayer in the structure of photoswitchable OFETs. It was shown that the electrical performance and stability of the devices can be tuned by variation of the substituents in the structure of the photochromic material. In particular, it was found that dihetarylethenes with donor substituents demonstrated the best light-induced switching effects (wider memory windows and higher switching coefficients) in the devices. The operation mechanism of the light-triggered memory devices was proposed based on the differential in situ Fourier transform infrared (FTIR) spectroscopy data and regression analysis of the threshold voltage-programming time experimental dependencies. The established relationships will facilitate further rational design of new photochromic materials, thus paving a way to fast and durable organic optical memories and memory transistors (memristors).
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Affiliation(s)
- Filipp A Obrezkov
- Center for Energy Science and Technology, Skolkovo Institute of Science and Technology, Nobel Street 3, Moscow 143026, Russia
| | - Dolgor D Dashitsyrenova
- Institute for Problems of Chemical Physics of Russian Academy of Science, Academician Semenov Avenue 1, Chernogolovka, Moscow Region 142432, Russia
| | - Andrey G Lvov
- N.D. Zelinsky Institute of Organic Chemistry of Russian Academy of Science, Leninskiy Avenue 47, Moscow 119991, Russia
| | - Dmytro Y Volyniuk
- Kaunas University of Technology (KTU), K. Donelaičio g. 73, Kaunas 44249, Lithuania
| | - Valerii Z Shirinian
- N.D. Zelinsky Institute of Organic Chemistry of Russian Academy of Science, Leninskiy Avenue 47, Moscow 119991, Russia
| | - Philipp Stadler
- Linz institute for Organic Solar Cells (LIOS), Institute of Physical Chemistry, Johannes Kepler University Linz, Altenberger Strasse 69, Linz 4040, Austria
| | | | - Niyazi S Sariciftci
- Linz institute for Organic Solar Cells (LIOS), Institute of Physical Chemistry, Johannes Kepler University Linz, Altenberger Strasse 69, Linz 4040, Austria
| | - Sergey M Aldoshin
- Institute for Problems of Chemical Physics of Russian Academy of Science, Academician Semenov Avenue 1, Chernogolovka, Moscow Region 142432, Russia
| | - Mikhail M Krayushkin
- N.D. Zelinsky Institute of Organic Chemistry of Russian Academy of Science, Leninskiy Avenue 47, Moscow 119991, Russia
| | - Pavel A Troshin
- Center for Energy Science and Technology, Skolkovo Institute of Science and Technology, Nobel Street 3, Moscow 143026, Russia
- Institute for Problems of Chemical Physics of Russian Academy of Science, Academician Semenov Avenue 1, Chernogolovka, Moscow Region 142432, Russia
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25
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Kim C, Kim JY, Lee K, Jung SY, Yun DJ, An TK, Lee HS, Jeong YJ, Lee J. Surface-modified quantum-dot floating layer using novel thiol with large dipole moment for improved feasibility of light-erasable organic transistor memory applications. J IND ENG CHEM 2020. [DOI: 10.1016/j.jiec.2020.01.031] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
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26
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Chen CH, Wang Y, Michinobu T, Chang SW, Chiu YC, Ke CY, Liou GS. Donor-Acceptor Effect of Carbazole-Based Conjugated Polymer Electrets on Photoresponsive Flash Organic Field-Effect Transistor Memories. ACS APPLIED MATERIALS & INTERFACES 2020; 12:6144-6150. [PMID: 31918540 DOI: 10.1021/acsami.9b20960] [Citation(s) in RCA: 27] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The molecular structure of polymer electrets is crucial for creating diverse functionalities of organic field-effect transistor (OFET) devices. Herein, a conceptual framework has been applied in this study to design the highly photoresponsive carbazole-based copolymer electret materials for the application of photoresponsive OFET memory. As an electret layer, two 1,8-carbazole-based copolymers were utilized; the copoly(CT) consisted of carbazole as the donor group and thiophene as the π-spacer, whereas the copoly(CBT) was further introduced as an acceptor moiety, benzothiadiazole, for comparison. Both copolymers exhibited efficient visible-light absorption and photoluminescence quenching in the film state, indicating the formation of a considerable number of nonemissive excitons, one of the crucial factors for achieving photoinduced recovery behavior in OFET memories. Compared to copoly(CT) with the pure donor system, faster and more effective photoinduced recovery behavior was discovered in the copoly(CBT) with the conjugated donor-acceptor structure because of the coexistence of the conjugated donor and acceptor groups. Thus, the dissociation of the generated excitons facilitated the stimulating of the unique ambipolar trapping property, resulting in the high-density data storage devices with multilevel current states. In addition, the nonvolatile and durable characteristics demonstrated the feasibility in application of memory and photorecorders.
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Affiliation(s)
- Chia-Hui Chen
- Institute of Polymer Science and Engineering , National Taiwan University , No.1, Sec. 4, Roosevelt Road , Taipei 10617 , Taiwan
| | - Yang Wang
- Department of Materials Science and Engineering , Tokyo Institute of Technology , 2-12-1 Ookayama , Meguro-ku, Tokyo 152-8552 , Japan
| | - Tsuyoshi Michinobu
- Department of Materials Science and Engineering , Tokyo Institute of Technology , 2-12-1 Ookayama , Meguro-ku, Tokyo 152-8552 , Japan
| | - Shu-Wei Chang
- Department of Chemical Engineering , National Taiwan University of Science and Technology , No.43, Sec. 4, Keelung Rd. , Da'an Dist., Taipei City 10607 , Taiwan
| | - Yu-Cheng Chiu
- Department of Chemical Engineering , National Taiwan University of Science and Technology , No.43, Sec. 4, Keelung Rd. , Da'an Dist., Taipei City 10607 , Taiwan
- Advanced Research Center for Green Materials Science and Technology , National Taiwan University , Taipei 10617 , Taiwan
| | - Chun-Yao Ke
- Institute of Polymer Science and Engineering , National Taiwan University , No.1, Sec. 4, Roosevelt Road , Taipei 10617 , Taiwan
| | - Guey-Sheng Liou
- Institute of Polymer Science and Engineering , National Taiwan University , No.1, Sec. 4, Roosevelt Road , Taipei 10617 , Taiwan
- Advanced Research Center for Green Materials Science and Technology , National Taiwan University , Taipei 10617 , Taiwan
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27
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Yuvaraja S, Nawaz A, Liu Q, Dubal D, Surya SG, Salama KN, Sonar P. Organic field-effect transistor-based flexible sensors. Chem Soc Rev 2020; 49:3423-3460. [DOI: 10.1039/c9cs00811j] [Citation(s) in RCA: 126] [Impact Index Per Article: 31.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/18/2022]
Abstract
Flexible transistors are the next generation sensing technology, due to multiparametric analysis, reduced complexity, biocompatibility, lightweight with tunable optoelectronic properties. We summarize multitude of applications realized with OFETs.
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Affiliation(s)
- Saravanan Yuvaraja
- Sensors Lab
- Advanced Membranes and Porous Materials Center
- Computer, Electrical and Mathematical Science and Engineering Division
- King Abdullah University of Science and Technology
- Saudi Arabia
| | - Ali Nawaz
- Departamento de Física
- Universidade Federal do Paraná
- Caixa Postal 19044
- Curitiba
- Brazil
| | - Qian Liu
- School of Chemistry and Physics
- Queensland University of Technology (QUT)
- Brisbane
- Australia
| | - Deepak Dubal
- School of Chemistry and Physics
- Queensland University of Technology (QUT)
- Brisbane
- Australia
- Centre for Materials Science
| | - Sandeep G. Surya
- Sensors Lab
- Advanced Membranes and Porous Materials Center
- Computer, Electrical and Mathematical Science and Engineering Division
- King Abdullah University of Science and Technology
- Saudi Arabia
| | - Khaled N. Salama
- Sensors Lab
- Advanced Membranes and Porous Materials Center
- Computer, Electrical and Mathematical Science and Engineering Division
- King Abdullah University of Science and Technology
- Saudi Arabia
| | - Prashant Sonar
- School of Chemistry and Physics
- Queensland University of Technology (QUT)
- Brisbane
- Australia
- Centre for Materials Science
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28
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Shih CC, Chiang YC, Hsieh HC, Lin YC, Chen WC. Multilevel Photonic Transistor Memory Devices Using Conjugated/Insulated Polymer Blend Electrets. ACS APPLIED MATERIALS & INTERFACES 2019; 11:42429-42437. [PMID: 31625392 DOI: 10.1021/acsami.9b14628] [Citation(s) in RCA: 21] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Photonic data storage has diverse optoelectronic applications such as optical sensing and recording, integrated image circuits, and multibit-storage flash memory. In this study, we employ conjugated/insulated polymer blends as the charge storage electret for photonic field-effect transistor memory devices by exploring the blend composition, energy level alignment, and morphology on the memory characteristics. The studied conjugated polymers included poly(9,9-di-n-octylfluorenyl-2,7-diyl) (PF), poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), poly[{2,5-di(3',7'-dimethyloctyloxy)-1,4-phenylene-vinylene}-co-{3-(4'-(3″,7″-dimethyloctyloxy)phenyl)-1,4-phenylenevinylene}-co-{3-(3'-(3',7'-dimethyloctyloxy)phenyl)-1,4-phenylenevinylene}] (SY-PPV), and poly[(9,9-di-n-octylfluorenyl-2,7-diyl)-alt-(benzo[2,1,3]thiadiazol-4,8-diyl)] (F8BT), and the insulated polymers were polystyrene (PS) and poly(methyl methacrylate) (PMMA). The photonic memory device using the PF/PS blend electret exhibited a dynamic switching behavior with light-writing and voltage-erasing processes both within only 1 s, along with a high contrast on the current on/off ratio between "Photo-On" and "Electrical-OFF" over 106 and the decent retention time for more than 3 months. In addition, the multilevel memory behavior could be observed using different light sources of 405, 450, and 520 nm or energy intensity, which was supported by surface potential analysis. The characteristics were superior to those of the devices using PF/PMMA blend due to the higher charge storage behavior of PS supported by fluorescence analysis. The PF/PS blend film prepared from the chlorobenzene solvent exhibited mesh-like and aggregated PF domains in the PS matrix and enhanced the contact surface area between the semiconductor and blend electret, leading to a higher memory window. The photonic memory behavior was also observed in the blend electrets of PS with the low band gap polymer, MEH-PPV, SY-PPV, or F8BT, by changing the photoresponsive light sources. Our study demonstrated a new electret system to apply on the multilevel photonic memory devices.
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29
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Zhang LX, Gao X, Lv JJ, Zhong YN, Xu C, Xu JL, Wang SD. Filter-Free Selective Light Monitoring by Organic Field-Effect Transistor Memories with a Tunable Blend Charge-Trapping Layer. ACS APPLIED MATERIALS & INTERFACES 2019; 11:40366-40371. [PMID: 31595743 DOI: 10.1021/acsami.9b15342] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Integration of selective photodetection and signal storage in a single device, such as organic field-effect transistor (OFET) memories, meets the demands for radiation monitoring and protection. A new strategy is developed to achieve filter-free and selective light monitoring by adopting a solution-processed blend charge-trapping layer in OFET memories, where the charge-trapping layer is composed of phenyl-C61-butyric acid methyl ester (PCBM) dispersed in a polymer electret thin film. The OFET memory without PCBM shows response only to ultraviolet light, whereas the spectral response edges are extended to the visible and near-infrared regions in the corresponding devices with relatively low and high contents of PCBM in the charge-trapping layer, respectively. A set of OFET memories with different PCBM contents is used to qualitatively evaluate the light composition in an optical source. The tunable spectral response in the OFET memories is ascribed to the additional photoassisted charge-trapping paths depending on the blend ratio in the charge-trapping layer. This mechanism may inspire alternative approaches to organic-based optical sensing and monitoring in flexible and wearable electronics.
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Affiliation(s)
- Lin-Xi Zhang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices , Soochow University , Suzhou , Jiangsu 215123 , P. R. China
| | - Xu Gao
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices , Soochow University , Suzhou , Jiangsu 215123 , P. R. China
| | - Jing-Jing Lv
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices , Soochow University , Suzhou , Jiangsu 215123 , P. R. China
| | - Ya-Nan Zhong
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices , Soochow University , Suzhou , Jiangsu 215123 , P. R. China
| | - Chao Xu
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices , Soochow University , Suzhou , Jiangsu 215123 , P. R. China
| | - Jian-Long Xu
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices , Soochow University , Suzhou , Jiangsu 215123 , P. R. China
| | - Sui-Dong Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices , Soochow University , Suzhou , Jiangsu 215123 , P. R. China
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30
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Jeong YJ, Yun DJ, Noh SH, Park CE, Jang J. Surface Modification of CdSe Quantum-Dot Floating Gates for Advancing Light-Erasable Organic Field-Effect Transistor Memories. ACS NANO 2018; 12:7701-7709. [PMID: 30024727 DOI: 10.1021/acsnano.8b01413] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Photoresponsive transistor memories that can be erased using light-only bias are of significant interest owing to their convenient elimination of stored data for information delivery. Herein, we suggest a strategy to improve light-erasable organic transistor memories, which enables fast "photoinduced recovery" under low-intensity light. CdSe quantum dots (QDs) whose surfaces are covered with three different organic molecules are introduced as photoactive floating-gate interlayers in organic transistor memories. We determine that CdSe QDs capped or surface-modified with small molecular ligands lead to efficient hole diffusion from the QDs to the conducting channel during "photoinduced recovery", resulting in faster erasing times. In particular, the memories with QDs surface-modified with fluorinated molecules function as normally-ON type transistor memories with nondestructive operation. These memories exhibit high memory ratios over 105 between OFF and ON bistable current states for over 10 000 s and good dynamic switching behavior with voltage-driven programming processes and light-assisted erasing processes within 1 s. Our study provides a useful guideline for designing photoactive floating-gate materials to achieve desirable properties of light-erasable organic transistor memories.
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Affiliation(s)
- Yong Jin Jeong
- The Research Institute of Industrial Science , Hanyang University , Seoul 04763 , Republic of Korea
- Polymer Research Institute, Department of Chemical Engineering , Pohang University of Science and Technology , Pohang 37673 , Republic of Korea
- Department of Energy Engineering , Hanyang University , Seoul 04763 , Republic of Korea
| | - Dong-Jin Yun
- Analytical Science Laboratory of Samsung Advanced Institute of Technology , SAIT, Suwon 16678 , Republic of Korea
| | - Sung Hoon Noh
- Department of Energy Engineering , Hanyang University , Seoul 04763 , Republic of Korea
| | - Chan Eon Park
- Polymer Research Institute, Department of Chemical Engineering , Pohang University of Science and Technology , Pohang 37673 , Republic of Korea
| | - Jaeyoung Jang
- Department of Energy Engineering , Hanyang University , Seoul 04763 , Republic of Korea
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31
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Cheng SW, Han T, Huang TY, Chang Chien YH, Liu CL, Tang BZ, Liou GS. Novel Organic Phototransistor-Based Nonvolatile Memory Integrated with UV-Sensing/Green-Emissive Aggregation Enhanced Emission (AEE)-Active Aromatic Polyamide Electret Layer. ACS APPLIED MATERIALS & INTERFACES 2018; 10:18281-18288. [PMID: 29733198 DOI: 10.1021/acsami.8b02560] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
A novel aggregation enhanced emission (AEE)-active polyamide TPA-CN-TPE with a high photoluminesence characteristic was successfully synthesized by the direct polymerization of 4-cyanotriphenyl diamine (TPA-CN) and tetraphenylethene (TPE)-containing dicarboxylic acid. The obtained luminescent polyamide plays a significant role as the polymer electret layer in organic field-effect transistors (OFETs)-type memory. The strong green emission of TPA-CN-TPE under ultraviolet (UV) irradiation can be directly absorbed by the pentacene channel, displaying a light-induced programming and voltage-driven erasing organic phototransistor-based nonvolatile memory. Memory window can be effectively manipulated between the programming and erasing states by applying UV light illumination and electrical field, respectively. The photoinduced memory behavior can be maintained for over 104 s between these two states with an on/off ratio of 104, and the memory switching can be steadily operated for many cycles. With high photoresponsivity ( R) and photosensitivity ( S), this organic phototransistor integrated with AEE-active polyamide electret layer could serve as an excellent candidate for UV photodetectors in optical applications. For comparison, an AEE-inactive aromatic polyimide TPA-PIS electret with much weaker solid-state emission was also applied in the same OFETs device architecture, but this device did not show any UV-sensitive and UV-induced memory characteristics, which further confirmed the significance of the light-emitting capability of the electret layer.
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Affiliation(s)
- Shun-Wen Cheng
- Institute of Polymer Science and Engineering , National Taiwan University , Taipei 10617 , Taiwan
| | - Ting Han
- Department of Chemical and Materials Engineering , Hong Kong University of Science and Technology , Clear Water Bay , Kowloon , Hong Kong, China
| | - Teng-Yung Huang
- Institute of Polymer Science and Engineering , National Taiwan University , Taipei 10617 , Taiwan
| | - Yu-Hsin Chang Chien
- Department of Chemical and Materials Engineering , National Central University , Taoyuan 32001 , Taiwan
| | - Cheng-Liang Liu
- Department of Chemical and Materials Engineering , National Central University , Taoyuan 32001 , Taiwan
| | - Ben Zhong Tang
- Department of Chemical and Materials Engineering , Hong Kong University of Science and Technology , Clear Water Bay , Kowloon , Hong Kong, China
| | - Guey-Sheng Liou
- Institute of Polymer Science and Engineering , National Taiwan University , Taipei 10617 , Taiwan
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32
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Li W, Guo F, Ling H, Liu H, Yi M, Zhang P, Wang W, Xie L, Huang W. Solution-Processed Wide-Bandgap Organic Semiconductor Nanostructures Arrays for Nonvolatile Organic Field-Effect Transistor Memory. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:1701437. [PMID: 29165914 DOI: 10.1002/smll.201701437] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/05/2017] [Revised: 09/29/2017] [Indexed: 06/07/2023]
Abstract
In this paper, the development of organic field-effect transistor (OFET) memory device based on isolated and ordered nanostructures (NSs) arrays of wide-bandgap (WBG) small-molecule organic semiconductor material [2-(9-(4-(octyloxy)phenyl)-9H-fluoren-2-yl)thiophene]3 (WG3 ) is reported. The WG3 NSs are prepared from phase separation by spin-coating blend solutions of WG3 /trimethylolpropane (TMP), and then introduced as charge storage elements for nonvolatile OFET memory devices. Compared to the OFET memory device with smooth WG3 film, the device based on WG3 NSs arrays exhibits significant improvements in memory performance including larger memory window (≈45 V), faster switching speed (≈1 s), stable retention capability (>104 s), and reliable switching properties. A quantitative study of the WG3 NSs morphology reveals that enhanced memory performance is attributed to the improved charge trapping/charge-exciton annihilation efficiency induced by increased contact area between the WG3 NSs and pentacene layer. This versatile solution-processing approach to preparing WG3 NSs arrays as charge trapping sites allows for fabrication of high-performance nonvolatile OFET memory devices, which could be applicable to a wide range of WBG organic semiconductor materials.
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Affiliation(s)
- Wen Li
- Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Fengning Guo
- Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Haifeng Ling
- Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Hui Liu
- Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Mingdong Yi
- Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Peng Zhang
- Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Wenjun Wang
- Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
- School of Physical Science and Information Technology, Liaocheng University, 1 Hunan Road, Liaocheng, 252059, China
| | - Linghai Xie
- Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
| | - Wei Huang
- Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, 210023, China
- Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), 127 West Youyi Road, Xi'an, 710072, Shaanxi
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Zhou L, Han ST, Shu S, Zhuang J, Yan Y, Sun QJ, Zhou Y, Roy VAL. Localized Surface Plasmon Resonance-Mediated Charge Trapping/Detrapping for Core-Shell Nanorod-Based Optical Memory Cells. ACS APPLIED MATERIALS & INTERFACES 2017; 9:34101-34110. [PMID: 28891295 DOI: 10.1021/acsami.7b07486] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
For following the trend of miniaturization as per Moore's law, increasing efforts have been made to develop single devices with versatile functionalities for Internet of Things (IoT). In this work, organic optical memory devices with excellent dual optoelectronic functionality including light sensing and data storage have been proposed. The Au@Ag core-shell nanorods (NRs)-based memory device exhibits large memory window up to 19.7 V due to the well-controlled morphology of Au@Ag NRs with optimum size and concentration. Furthermore, since the extinction intensity of Au@Ag NRs gradually enhance with the increase in Ag shell thickness, the phototunable behaviors of memory device were systematically studied by varying the thickness of Ag shell. Multilevel data storage can be achieved with the light assistant. Finally, the simulation results demonstrate that the phototunable memory property is originated from the multimode localized surface plasmon resonance (LSPR) of Au@Ag NRs, which is in consistent with the experimental results. The Au@Ag core-shell NRs-based memories may open up a new strategy toward developing high-performance optoelectronic devices.
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Affiliation(s)
| | | | | | - Jiaqing Zhuang
- Department of Physics and Materials Science, City University of Hong Kong , Hong Kong, China
| | | | - Qi-Jun Sun
- Department of Physics and Materials Science, City University of Hong Kong , Hong Kong, China
| | | | - V A L Roy
- Department of Physics and Materials Science, City University of Hong Kong , Hong Kong, China
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