π-Extended Isoindigo-Based Derivative: A Promising Electron-Deficient Building Block for Polymer Semiconductors

Recent developments in polymer semiconductors with excellent electron transport performances

Benefiting from molecular design and device innovation, electronic devices based on polymer semiconductors have achieved significant developments and gradual commercialization over the past few decades. Most of high-performance polymer semiconductors that have been prepared exhibit p-type performances, and records of their carrier mobilities are constantly being broken through. Although ambipolar and n-type polymers are necessary for constructing p-n heterojunctions and logic circuits, only a few materials show outstanding device performances, which leads to their developments lagging far behind that of p-type analogues. As a consequence, it is extremely significant to summarize polymer semiconductors with excellent electron transport performances. This review focuses on the design considerations and bonding modes between monomers of polymer semiconductors with high electron mobilities. To enhance electron transport performances of polymer semiconductors, the structural modification strategies are described in detail. Subsequently, the electron transport, thermoelectric, mixed ionic-electronic conduction, intrinsically stretchable, photodetection, and spin transport performances of high-electron mobility polymers are discussed from the perspective of molecular engineering. In the end, the challenges and prospects in this research field are presented, which provide valuable guidance for the design of polymer semiconductors with excellent electron transport performances and the exploration of more advanced applications in the future.

Chain-Extending Polymerization for Significant Improvement in Organic Thin-Film Transistor Performance

To achieve high-performance polymer semiconductors, it is crucially important to explore novel and effective synthesis strategies. Here, chain-extending polymerization as a synthesis strategy to design polymer semiconductors is introduced. Furthermore, we demonstrate its superiority over a conventional synthesis strategy─one-pot polymerization. Diketopyrrolopyrrole-thieno[3,2-b]thiophene-containing polymers (PDPPTT and PDPPTT-vinylene) are used in this study. PDPPTT and PDPPTT-vinylene are synthesized through one-pot polymerization and chain-extending polymerization, respectively. The utilization of this novel strategy enhances the hole/electron mobilities of PDPPTT-vinylene to up to 3.70/2.96 cm² V^-1 s^-1 (compared to 2.71/0.63 cm² V^-1 s^-1 for PDPPTT), thereby achieving the required performance for organic circuits like inverters and ring oscillators. The significant improvement in the transistor performance of PDPPTT-vinylene is attributed to the introduced vinylene linking units during the polymerization process, which can fine-tune the electronic structure, expand π-conjugation, and induce stronger intermolecular π-π interactions with more significant crystallization. These results demonstrate that chain-extending polymerization is an effective synthesis strategy for developing high-performance polymer semiconductors.

Acceptor Modulation Strategies for Improving the Electron Transport in High-Performance Organic Field-Effect Transistors

High-performance ambipolar and electronic type semiconducting polymers are essential for fabricating various organic optoelectronic devices and complementary circuits. This review summarizes the strategies of improving the electron transport of semiconducting polymers via acceptor modulation strategies, which include the use of single, dual, triple, multiple, and all acceptors as well as the fusion of multiple identical acceptors to obtain new heterocyclic acceptors. To further improve the electron transport of semiconducting polymers, the introduction of strong electron-withdrawing groups can enhance the electron-withdrawing ability of donors and acceptors, thereby facilitating electron injection and suppressing hole accumulation. In addition, the relationships between the molecular structure, frontier molecular orbital energy levels, thin film morphology, microstructure, processing conditions, and device performances are also comprehensively discussed. Finally, the challenges encountered in this research area are proposed and the future outlook is presented.

Evaluating Donor Effects in Isoindigo-Based Small Molecular Fluorophores

Small molecular organic fluorophores have garnered significant interest because of their indispensable use in fluorescence imaging (FI) and optoelectronic devices. Herein, we designed triphenylamine (TPA)-capped donor-acceptor-donor (D-A-D)-based fluorophores having a variation at the heterocyclic donor (D) units, 3,4-ethylenedioxythiophene (EDOT), furan (FURAN), thiophene (THIO), and 1-methyl-1H-pyrrole (MePyr), with isoindigo as the core electron acceptor (A) unit. Synthesis of these fluorophores (II-X-TPA) resulted in four symmetrical dye molecules: II-EDOT-TPA, II-FURAN-TPA, II-THIO-TPA, and II-MePyr-TPA, where TPA functioned as a terminal unit and a secondary electron donor group. Photophysical, electrochemical, and computational analyses were conducted to investigate the effect of heterocyclic donor units on the II-X-TPA derivatives. Density functional theory (DFT) and time-dependent DFT (TD-DFT) calculations provided insightful features of structural and electronic properties of each fluorophore and correlated well with experimental observations. Electron density distribution maps, overlapping frontier molecular orbital diagrams, and highest occupied molecular orbital (HOMO) to lowest unoccupied molecular orbital (LUMO) electron transfer indicated intramolecular charge transfer (ICT). Theoretical studies confirmed the experimental HOMO energy trend and demonstrated its crucial importance in understanding each heterocycle's donor ability. Stokes shifts of up to ∼178 nm were observed, whereas absorptions and emissions were shifted deeper into the NIR region, resulting from ICT. Results suggest that this isoindigo fluorophore series has potential as a molecular scaffold for the development of efficient FI agents. The studied fluorophores can be further tuned with different donor fragments to enhance the ICT and facilitate in shifting the optical properties further into the NIR region.

Air-Stable and High-Performance Unipolar n-Type Conjugated Semiconducting Polymers Prepared by a "Strong Acceptor-Weak Donor" Strategy

Unipolar n-type conjugated polymer materials with long-term stable electron transport upon direct exposure to the air atmosphere are very challenging to prepare. In this study, three unipolar n-type donor-acceptor (D-A) conjugated polymer semiconductors (abbreviated as PNVB, PBABDFV, and PBAIDV) were successfully developed through a "strong acceptor-weak donor" strategy. The weak electron donation of the donor units in all three polymers successfully lowered the molecular energy levels by the acceptor units that strongly attracted electrons. Cyclic voltammetry demonstrated that all three polymers had low highest occupied molecular orbital and lowest unoccupied molecular orbital energy levels near -6.0 and -4.0 eV, respectively. These results were consistent with the density functional theory calculations. The as-prepared polymers were then used to manufacture organic field-effect transistor (OFET) devices in bottom-gate/top-contact (BG/TC) configuration without any packaging protection. As expected, all devices exhibited unipolar electron transport properties. PBABDFV-based devices showed excellent field-effect performance and air stability, beneficial for straight-line molecular chain and closest π-π stacking distance to prevent water vapor and oxygen from diffusion into the active layer. This led to a maximum electron mobility (μ_e,max) of 0.79 cm² V^-1 s^-1 under air conditions. In addition, 0.50 cm² V^-1 s^-1 was still maintained after 27 days of storage in ambient environment. The near-ideal transfer curve of the PBABDFV-based OFET device in BG/TC configuration under vacuum was obtained with average mobility reliability factor (r_ave) reaching 88%.

Synthesis and Characterization of Isoindigo-Based Push-Pull Chromophores

Symmetrical and unsymmetrical chromophores of isoindigo 3-7 were designed and synthesized, in which isoindigo was used as the central unit (electron acceptor unit A), triphenylamine as the end capping unit (electron donor group D), 1,1,4,4-tetracyanobutadiene (TCBD, A') and cyclohexa-2,5-diene-1,4-diylidene-expanded TCBD (A″) as the acceptor unit. The effects of multiacceptor units on photophysical, electrochemical, and computational studies were investigated. The photophysical properties of isoindigo 6 and 7 exhibit a strong intramolecular charge transfer (ICT) absorption band in the near IR region. The isoindigo 4-7 shows multi-redox waves with a low electrochemical band gap, which signifies the tuning of highest occupied molecular orbital-lowest unoccupied molecular orbital energy levels and enhance the π-conjugation. The computational studies demonstrate that there is a good agreement with experimental data. The molecular design and synthesis of isoindigo 4-7 gives a new avenue for the development of building blocks in organic electronics.

Fast Deposition of Aligning Edge-On Polymers for High-Mobility Ambipolar Transistors

Fast deposition of aligning ambipolar polymers for high-performance organic field-effect transistors (OFETs) and inverter circuits are highly desired for both scientific studies and industry applications. Here, large-area and ordered polymer films are prepared by a bar-coating method at a rate of 120 mm s^-1 in air. Atomic force microscopy and grazing-incidence wide-angle X-ray scattering analysis indicate uniform edge-on poly(fluoroisoindigo-difluorobithiophene-fluoroisoindigo-bithiophene) (PFIBI-BT) in 11.7 ± 1 nm film (≈5 layers). The elongated, uniformly oriented grains can reduce the adverse effects of the grain boundaries and facilitate charge transport in polymers. Furthermore, OFETs based on parallel film show high hole/electron mobilities up to 5.5/4.5 cm² V^-1 s^-1 , which are approximately nine times of the devices prepared by spin-coating. The gain of the inverter is as high as 174, which is one of the highest values in polymer inventers currently. These results demonstrate that the excellent bipolar performance of few-layer PFIBI-BT can be ensured while achieving the compatibility of the experimental process with industrial preparation.

Triple Acceptors in a Polymeric Architecture for Balanced Ambipolar Transistors and High-Gain Inverters

The exploration of novel molecular architectures is crucial for the design of high-performance ambipolar polymer semiconductors. Here, a "triple-acceptors architecture" strategy to design the ambipolar polymer DPP-2T-DPP-TBT is introduced. The utilization of this architecture enables DPP-2T-DPP-TBT to achieve deep-lying highest occupied molecular orbital (HOMO)/lowest unoccupied molecular orbital (LUMO) levels of -5.38/-4.19 eV, and strong intermolecular interactions, which are favorable for hole/electron injection and intermolecular hopping through π-stacking. All these factors result in excellent ambipolar transport characteristics and promising applications in complementary-like circuits for DPP-2T-DPP-TBT under ambient conditions with high hole/electron mobilities and a gain value of up to 3.01/3.84 cm² V^-1 s^-1 and 171, respectively, which are among the best performances in ambipolar polymer organic thin-film transistors and associated complementary-like circuits, especially in top-gate device configuration with low-cost glass as substrates. These results demonstrate that the "triple-acceptors architecture" strategy is an effective way for designing high-performance ambipolar polymer semiconductors.

High-Performance All-Polymer Solar Cells Achieved by Fused Perylenediimide-Based Conjugated Polymer Acceptors

We report three n-type polymeric electron acceptors (PFPDI-TT, PFPDI-T, and PFPDI-Se) based on the fused perylene diimide (FPDI) and thieno[3,2- b]thiophene, thiophene, or selenophene units for all-polymer solar cells (all-PSCs). These FPDI-based polymer acceptors exhibit strong absorption between 350 and 650 nm with wide optical bandgap of 1.86-1.91 eV, showing good absorption compensation with the narrow bandgap polymer donor. The lowest unoccupied molecular orbital (LUMO) energy levels were located at around -4.11 eV, which are comparable with those of the fullerene derivatives and other small molecular electron acceptors. The conventional all-PSCs based on the three polymer acceptors and PTB7-Th as polymer donor gave remarkable power conversion efficiencies (PCEs) of >6%, and the PFPDI-Se-based all-PSC achieved the highest PCE of 6.58% with a short-circuit current density ( J_sc) of 13.96 mA/cm², an open-circuit voltage ( V_oc) of 0.76 V, and a fill factor (FF) of 62.0%. More interestingly, our results indicate that the photovoltaic performances of the FPDI-based polymer acceptors are mainly determined by the FPDI unit with a small effect from the comonomers, which is quite different from the others reported rylenediimide-based polymer acceptors. This intriguing phenomenon is speculated as the huge geometry configuration of the FPDI unit, which minimizes the effect of the comonomer. These results highlight a promising future for the application of the FPDI-based polymer acceptors in the highly efficient all-PSCs.