Structurally Controlled Large-Area 10 nm Pitch Graphene Nanomesh by Focused Helium Ion Beam Milling

Engineering high quality graphene superlattices via ion milled ultra-thin etching masks

Nanofabrication research pursues the miniaturization of patterned feature size. In the current state of the art, micron scale areas can be patterned with features down to ~30 nm pitch using electron beam lithography. Here, we demonstrate a nanofabrication technique which allows patterning periodic structures with a pitch down to 16 nm. It is based on focused ion beam milling of suspended membranes, with minimal proximity effects typical to standard electron beam lithography. The membranes are then transferred and used as hard etching masks. We benchmark our technique by electrostatically inducing a superlattice potential in graphene and observe bandstructure modification in electronic transport. Our technique opens the path towards the realization of very short period superlattices in 2D materials, but with the ability to control lattice symmetries and strength. This can pave the way for a versatile solid-state quantum simulator platform and the study of correlated electron phases.

SISSO-assisted prediction and design of mechanical properties of porous graphene with a uniform nanopore array

Mechanical properties of porous graphene can be effectively tuned by tailoring the nanopore arrangement. Knowledge of the relationship between the porous structure and overall mechanical properties is thus essential for the wide potential applications, and the existing challenge is to efficiently predict and design the mechanical properties of porous graphene due to the diverse nanopore arrangements. In this work, we report on how the SISSO (Sure Independence Screening and Sparsifying Operator) algorithm can be applied to build a bridge between the mechanical properties of porous graphene and the uniform nanopore array. We first construct a database using the strength and work of fracture calculated by large-scale molecular dynamics simulations. Then the SISSO algorithm is adopted to train a predictive model and automatically derive the optimal fitting formulae which explicitly describe the nonlinear structure-property relationships. These expressions not only enable the direct and accurate prediction of targeted properties, but also serve as a convenient and portable tool for inverse design of the porous structure. Compared with other forecasting methods including several popular machine learning algorithms, the SISSO algorithm shows its advantages in both accuracy and convenience.

A review of defect engineering, ion implantation, and nanofabrication using the helium ion microscope

The helium ion microscope has emerged as a multifaceted instrument enabling a broad range of applications beyond imaging in which the finely focused helium ion beam is used for a variety of defect engineering, ion implantation, and nanofabrication tasks. Operation of the ion source with neon has extended the reach of this technology even further. This paper reviews the materials modification research that has been enabled by the helium ion microscope since its commercialization in 2007, ranging from fundamental studies of beam-sample effects, to the prototyping of new devices with features in the sub-10 nm domain.

Effect of pore-size disorder on the electronic properties of semiconducting graphene nanomeshes

Graphene nanomeshes (GNMs) are novel materials that recently raised a lot of interest. They are fabricated by forming a lattice of pores in graphene. Depending on the pore size and pore lattice constant, GNMs can be either semimetallic or semiconducting with a gap large enough (∼ 0.5 eV) to be considered for transistor applications. The fabrication process is bound to produce some structural disorder due to variations in pore size. Recent electronic transport measurements in GNM devices (ACS Appl. Mater. Interfaces 10, 10 362, 2018) show a degradation of their bandgap in devices having pore-size disorder. It is therefore important to understand the effect of such variability on the electronic properties of semiconducting GNMs. In this work we use the density functional-based tight binding formalism to calculate the electronic properties of GNM structures with different pore sizes, pore densities, and with hydrogen and oxygen pore edge passivations. We find that structural disorder reduces the electronic gap and the carrier group velocity, which may interpret recent transport measurements in GNM devices. Furthermore, the trend of the bandgap with structural disorder is not significantly affected by the change in pore edge passivation. Our results show that even with structural disorder, GNMs are still attractive from a transistor device perspective.

Imaging and milling resolution of light ion beams from helium ion microscopy and FIBs driven by liquid metal alloy ion sources

While the application of focused ion beam (FIB) techniques has become a well-established technique in research and development for patterning and prototyping on the nanometer scale, there is still a large underused potential with respect to the usage of ion species other than gallium. Light ions in the range of m = 1-28 u (hydrogen to silicon) are of increasing interest due to the available high beam resolution in the nanometer range and their special chemical and physical behavior in the substrate. In this work, helium and neon ion beams from a helium ion microscope are compared with ion beams such as lithium, beryllium, boron, and silicon, obtained from a mass-separated FIB using a liquid metal alloy ion source (LMAIS) with respect to the imaging and milling resolution, as well as the current stability. Simulations were carried out to investigate whether the experimentally smallest ion-milled trenches are limited by the size of the collision cascade. While He⁺ offers, experimentally and in simulations, the smallest minimum trench width, light ion species such as Li⁺ or Be⁺ from a LMAIS offer higher milling rates and ion currents while outperforming the milling resolution of Ne⁺ from a gas field ion source. The comparison allows one to select the best possible ion species for the specific demands in terms of resolution, beam current, and volume to be drilled.

Freestanding and Supported MoS2 Monolayers under Cluster Irradiation: Insights from Molecular Dynamics Simulations

Two-dimensional (2D) materials with nanometer-size holes are promising systems for DNA sequencing, water purification, and molecule selection/separation. However, controllable creation of holes with uniform sizes and shapes is still a challenge, especially when the 2D material consists of several atomic layers as, e.g., MoS₂, the archetypical transition metal dichalcogenide. We use analytical potential molecular dynamics simulations to study the response of 2D MoS₂ to cluster irradiation. We model both freestanding and supported sheets and assess the amount of damage created in MoS₂ by the impacts of noble gas clusters in a wide range of cluster energies and incident angles. We show that cluster irradiation can be used to produce uniform holes in 2D MoS₂ with the diameter being dependent on cluster size and energy. Energetic clusters can also be used to displace sulfur atoms preferentially from either top or bottom layers of S atoms in MoS₂ and also clean the surface of MoS₂ sheets from adsorbents. Our results for MoS₂, which should be relevant to other 2D transition metal dichalcogenides, suggest new routes toward cluster beam engineering of devices based on 2D inorganic materials.

Design of Graphene Phononic Crystals for Heat Phonon Engineering

Controlling the heat transport and thermal conductivity through a material is of prime importance for thermoelectric applications. Phononic crystals, which are a nanostructured array of specially designed pores, can suppress heat transportation owing to the phonon wave interference, resulting in bandgap formation in their band structure. To control heat phonon propagation in thermoelectric devices, phononic crystals with a bandgap in the THz regime are desirable. In this study, we carried out simulation on snowflake shaped phononic crystal and obtained several phononic bandgaps in the THz regime, with the highest being at ≈2 THz. The phononic bandgap position and the width of the bandgap were found to be tunable by varying the neck-length of the snowflake structure. A unique bandgap map computed by varying the neck-length continuously provides enormous amounts of information as to the size and position of the phononic bandgap for various pore dimensions. We have also carried out transmission spectrum analysis and found good agreement with the band structure calculations. The pressure map visualized at various frequencies validates the effectiveness of snowflake shaped nano-pores in suppressing the phonons partially or completely, depending on the transmission probabilities.

Conductance Tunable Suspended Graphene Nanomesh by Helium Ion Beam Milling

This paper demonstrates that the electrical properties of suspended graphene nanomesh (GNM) can be tuned by systematically changing the porosity with helium ion beam milling (HIBM). The porosity of the GNM is well-controlled by defining the pitch of the periodic nanopores. The defective region surrounding the individual nanopores after HIBM, which limits the minimum pitch achievable between nanopores for a certain dose, is investigated and reported. The exponential relationship between the thermal activation energy (E_A) and the porosity is found in the GNM devices. Good E_A tuneability observed from the GNMs provides a new approach to the transport gap engineering beyond the conventional nanoribbon method.

Controlled Manipulation and Multiscale Modeling of Suspended Silicon Nanostructures under Site-Specific Ion Irradiation

In this work, controlled bidirectional deformation of suspended nanostructures by site-specific ion irradiation is presented. Multiscale modeling of the bidirectional deformation of nanostructures by site-specific ion irradiation is presented, incorporating molecular dynamics (MD) simulations together with finite element analysis, to substantiate the bending mechanism. Strain engineering of the free-standing nanostructure is employed for controlled deformation through site-specific kiloelectronvolt ion irradiation experimentally using a focused ion beam. We report the detailed bending mechanism of suspended silicon (Si) nanostructures through ion-induced irradiations. MD simulations are presented to understand the ion-solid interactions, defects formation in the silicon nanowire. The atomic-scale simulations reveal that the ion irradiation-induced bidirectional bending occurs through the development of localized tensile-compressive stresses in the lattice due to defect formation associated with atomic displacements. With an increasing ion dose, the evolution of localized tensile to compressive stress is observed, developing the alternate bending directions calculated through finite element analysis. The findings of multiscale modeling are in excellent agreement with the bidirectional nature of bending observed through the experiments. The developed in situ approach for bidirectional controlled manipulation of nanostructures in this work can be used for nanofabrication of numerous novel three-dimensional configurations and can provide a route toward functional nanostructures and devices.

Pulsed Laser-Assisted Helium Ion Nanomachining of Monolayer Graphene-Direct-Write Kirigami Patterns

A helium gas field ion source has been demonstrated to be capable of realizing higher milling resolution relative to liquid gallium ion sources. One drawback, however, is that the helium ion mass is prohibitively low for reasonable sputtering rates of bulk materials, requiring a dosage that may lead to significant subsurface damage. Manipulation of suspended graphene is, therefore, a logical application for He⁺ milling. We demonstrate that competitive ion beam-induced deposition from residual carbonaceous contamination can be thermally mitigated via a pulsed laser-assisted He⁺ milling. By optimizing pulsed laser power density, frequency, and pulse width, we reduce the carbonaceous byproducts and mill graphene gaps down to sub 10 nm in highly complex kiragami patterns.

Time-effective strategies for the fabrication of poly- and single-crystalline gold nano-structures by focused helium ion beam milling

Milling with the focused helium ion beam of a helium ion microscope is one of the most accurate ways to produce nano-structures such as plasmonic nanoantennas. In addition to good and immediate control of the dimensions, features in the sub-10 nm regime are achievable. Especially small gaps and sharp tips in this regime may lead to very high field enhancement under excitation. However, the milling rate of 30 keV helium ions is rather low, making it time-consuming to cut nano-structures out of a gold film. We present two processes to work around the low milling rate to obtain arrays of nano-structures with maximum precision within a reasonable time. These strategies can both be adapted to either poly-crystalline gold films or single-crystalline gold flakes. Using single crystals from a fabrication point of view enables even higher precision due to constant etch rates over the whole crystal as well as straight edges and vertical side-walls due to the uniform crystalline structure.

Cellulose nanofibrils prepared by gentle drying methods reveal the limits of helium ion microscopy imaging

TEMPO-oxidized cellulose nanofibrils (TCNFs) have unique properties, which can be utilised in many application fields from printed electronics to packaging. Visual characterisation of TCNFs has been commonly performed using Scanning Electron Microscopy (SEM). However, a novel imaging technique, Helium Ion Microscopy (HIM), offers benefits over SEM, including higher resolution and the possibility of imaging non-conductive samples uncoated. HIM has not been widely utilized so far, and in this study the capability of HIM for imaging of TCNFs was evaluated. Freeze drying and critical point drying (CPD) techniques were applied to preserve the open fibril structure of the gel-like TCNFs. Both drying methods worked well, but CPD performed better resulting in the specific surface area of 386 m2 g-1 when compared to 172 m2 g-1 and 42 m2 g-1 of freeze dried samples frozen in propane and nitrogen, respectively. HIM imaging of TCNFs was successful but high magnification imaging was challenging because the ion beam tended to degrade the TCNFs. The effect of the imaging parameters on the degradation was studied and an ion dose as low as 0.9 ion per nm2 was required to prevent the damage. This study points out the differences between the gentle drying methods of TCNFs and demonstrates beam damage during imaging like none previously reported with HIM. The results can be utilized in future studies of cellulose or other biological materials as there is a growing interest for both the HIM technique and bio-based materials.

Near-field imaging of graphene triangles patterned by helium ion lithography

Plasmon nanoresonators in graphene have many applications in biosensing, photodetectors and modulators. As a result, an efficient and precise patterning technique for graphene is required. Helium ion lithography (HIL) emerges as a promising tool for direct writing fabrication because it owns improved fabrication precision compared to electron beam lithography and conventional gallium focused ion beam technique. In this paper, utilizing HIL, a set of graphene triangles are patterned and excellent plasmon response is detected. Particularly, the evolution of breathing mode in these structures is unveiled by scattering-type scanning near-field optical microscopy. Besides, the plasmon response of graphene structures can be efficiently tuned by adjusting the irradiated ion dose during the etching process, which can be explained by the phenomenal simulation model. Our work demonstrates that HIL is a feasible way for precise plasmonic nanostructure fabrication, and can be applied to graphene plasmon control at the nanoscale as well.

Supported Two-Dimensional Materials under Ion Irradiation: The Substrate Governs Defect Production

Focused ion beams perfectly suit for patterning two-dimensional (2D) materials, but the optimization of irradiation parameters requires full microscopic understanding of defect production mechanisms. In contrast to freestanding 2D systems, the details of damage creation in supported 2D materials are not fully understood, whereas the majority of experiments have been carried out for 2D targets deposited on substrates. Here, we suggest a universal and computationally efficient scheme to model the irradiation of supported 2D materials, which combines analytical potential molecular dynamics with Monte Carlo simulations and makes it possible to independently assess the contributions to the damage from backscattered ions and atoms sputtered from the substrate. Using the scheme, we study the defect production in graphene and MoS₂ sheets, which are the two most important and wide-spread 2D materials, deposited on a SiO₂ substrate. For helium and neon ions with a wide range of initial ion energies including those used in a commercial helium ion microscope (HIM), we demonstrate that depending on the ion energy and mass, the defect production in 2D systems can be dominated by backscattered ions and sputtered substrate atoms rather than by the direct ion impacts and that the amount of damage in 2D materials heavily depends on whether a substrate is present or not. We also study the factors which limit the spatial resolution of the patterning process. Our results, which agree well with the available experimental data, provide not only insights into defect production but also quantitative information, which can be used for the minimization of damage during imaging in HIM or optimization of the patterning process.

Nanostructured Graphene: An Active Component in Optoelectronic Devices

Nanostructured and chemically modified graphene-based nanomaterials possess intriguing properties for their incorporation as an active component in a wide spectrum of optoelectronic architectures. From a technological point of view, this aspect brings many new opportunities to the now well-known atomically thin carbon sheet, multiplying its application areas beyond transparent electrodes. This article gives an overview of fundamental concepts, theoretical backgrounds, design principles, technological implications, and recent advances in semiconductor devices that integrate nanostructured graphene materials into their active region. Starting from the unique electronic nature of graphene, a physical understanding of finite-size effects, non-idealities, and functionalizing mechanisms is established. This is followed by the conceptualization of hybridized films, addressing how the insertion of graphene can modulate or improve material properties. Importantly, it provides general guidelines for designing new materials and devices with specific characteristics. Next, a number of notable devices found in the literature are highlighted. It provides practical information on material preparation, device fabrication, and optimization for high-performance optoelectronics with a graphene hybrid channel. Finally, concluding remarks are made with the summary of the current status, scientific issues, and meaningful approaches to realizing next-generation technologies.