Organic Light-Emitting Transistors with Simultaneous Enhancement of Optical Power and External Quantum Efficiency via Conjugated Polar Polymer Interlayers

A Fluorescent Conjugated Polar Polymer for Probing Charge Injection in Multilayer Organic Light-Emitting Transistors

Ambipolar organic light-emitting transistors (OLETs) are extremely appealing devices for applications from sensing to communication and display realization due to their inherent capability of coupling switching and light-emitting features. However, their limited external quantum efficiency (EQE) and brightness under ambipolar bias conditions hamper the progress of OLET technology. In this context, it was recently demonstrated in multi-stacked devices that the engineering of the interface between the topmost electron-transporting organic semiconductor (e-OS) and the emission layer (EML) is crucial in optimizing the recombination of the minority charges (i.e., electrons) and to enhance EQE and brightness. Here, we introduce a new light-emitting conjugated polar polymer (CPP) in a multi-stacked OLET to improve the electron injection from e-OS to EML and to study, simultaneously, electroluminescence-related processes such as exciton formation and quenching processes. Interestingly, we observed that the highly polar groups present in the conjugate polymer induced polarization-related relevant charge-trapping phenomena with consequent modulation of the entire electrostatic field distribution and unexpected optoelectronic features. In view of the extensive use of CPPs in OLETs, the use of multifunctional CPPs for probing photophysical processes at the functional interfaces in stacked devices may speed up the improvement of the light-emission properties in OLETs.

Achieving Bright Organic Light-Emitting Field-Effect Transistors with Sustained Efficiency through Hybrid Contact Design

Organic light-emitting field-effect transistors (OLEFETs) with bilayer structures have been widely studied due to their potential to integrate high-mobility organic transistors and efficient organic light-emitting diodes. However, these devices face a major challenge of imbalance charge transport, leading to a severe efficiency roll-off at high brightness. Here, we propose a solution to this challenge by introducing a transparent organic/inorganic hybrid contact with specially designed electronic structures. Our design aims to steadily accumulate the electrons injected into the emissive polymer, allowing the light-emitting interface to effectively capture more holes even when the hole current increases. Our numerical simulations show that the capture efficiency of these steady electrons will dominate charge recombination and lead to a sustained external quantum efficiency of 0.23% over 3 orders of magnitude of brightness (4 to 7700 cd/m²) and current density (1.2 to 2700 mA/cm²) from -4 to -100 V. The same enhancement is retained even after increasing the external quantum efficiency (EQE) to 0.51%. The high and tunable brightness with stable efficiency offered by hybrid-contact OLEFETs makes them ideal light-emitting devices for various applications. These devices have the potential to revolutionize the field of organic electronics by overcoming the fundamental challenge of imbalance charge transport.

TCTA:Ir(ppy)3 Green Emissive Blends in Organic Light-Emitting Transistors (OLETs)

Organic light-emitting transistors are photonic devices combining the function of an electrical switch with the capability of generating light under appropriate bias conditions. Achieving high-performance light-emitting transistors requires high-mobility organic semiconductors, optimized device structures, and highly efficient emissive layers. In this work, we studied the optoelectronic response of green blends (TCTA:Ir(ppy)₃) with varying doping concentrations in the limit of field-effect within a transistor device configuration. Increasing the dye concentration within the blend leads to a quenching of the photoluminescence signal; however, when implemented in a multilayer stack in a transistor, we observed an approximately 5-fold improvement in the light output for a 10% Ir(ppy)₃ doping blend. We analyzed our results in terms of balanced charge transport in the emissive layer, which, in the limit of field-effect (horizontal component), leads to an improved exciton formation and decay process. While the performances of our devices are yet to achieve the state-of-the-art diode counterpart, this work demonstrates that engineering the emissive layer is a promising approach to enhance the light emission in field-effect devices. This opens the way for a broader exploitation of organic light-emitting transistors as alternative photonic devices in several fields, ranging from display technology to flexible and wearable electronics.

Polyimide-Doped Indium-Gallium-Zinc Oxide-Based Transparent and Flexible Phototransistor for Visible Light Detection

We report a transparent and flexible polyimide (PI)-doped single-layer (PSL) phototransistor for the detection of visible light. The PSL was deposited on a SiO₂ gate insulator by a co-sputtering process using amorphous indium-gallium-zinc oxide (IGZO) and PI targets simultaneously. The PSL acted as both a channel layer and a visible-light absorption layer. PI is one of the few flexible organic materials that can be fabricated into sputtering targets. Compared with the IGZO phototransistor without PI doping, the PSL phototransistor exhibited improved optoelectronic characteristics under illumination with 635 nm red light of 1 mW/mm² intensity; the obtained photoresponsivity ranged from 15.00 to 575.00 A/W, the photosensitivity from 1.38 × 10¹ to 9.86 × 10⁶, and the specific detectivity from 1.35 × 10⁷ to 5.83 × 10¹¹ Jones. These improvements are attributed to subgap states induced by the PI doping, which formed decomposed organic molecules, oxygen vacancies, and metal hydroxides. Furthermore, a flexible PSL phototransistor was fabricated and showed stable optoelectronic characteristics even after 10,000 bending tests.

Organic Light-Emitting Transistors Entering a New Development Stage

Organic light-emitting transistors (OLETs) are possibly the smallest integrated optoelectronic devices that combine the switching and amplification mechanisms of organic field-effect transistors (OFETs) and the electroluminescent characteristic of organic light-emitting diodes (OLEDs). Such a unique architecture of OLETs makes them ideal for developing the next-generation display technology and electrically pumped lasers for miniaturized photonic devices and circuits. However, the development of OLETs has been slow. Recently, some exciting progress has been made with breakthroughs in high mobility emissive organic semiconductors, construction of high-performance OLETs, and fabrication of novel multifunctional OLETs. This recent slew of advances may represent the advent of a new development stage of OLETs and their related devices and circuits. In this paper, a detailed review of these fantastic advances is presented, with a special focus on the key points for developing high-performance OLETs. Finally, a brief conclusion is provided with a discussion on the challenges and future perspectives in this field.

Recent Advances in Multi-Layer Light-Emitting Heterostructure Transistors

Light-emitting transistors (LETs) have attracted tremendous academic and industrial interest due to their dual functions of electrical switching and light emission in a single device, which can considerably reduce system complexity and manufacturing costs, especially in the area of flat panel and flexible displays as well as lighting and lasers. In recent years, enhanced LET performance has been achieved by introducing multiple-layer heterostructures in the charge-carrying/light-emitting LET channel versus the best-reported performance in single active layer LETs, rendering multi-layer LETs promising candidates for next-generation display technologies. In this review, the fundamental structures and working principles of multi-layer heterostructure LETs are introduced. Next, developments in multi-layer LETs are discussed based on co-planar LETs, non-planar LETs, and vertical LETs including organic, quantum dot, and perovskite light emitters. Finally, this review concludes with a summary and a perspective on the future of this research field.

Large Area Emission in p-Type Polymer-Based Light-Emitting Field-Effect Transistors by Incorporating Charge Injection Interlayers

Organic light-emitting field-effect transistors (LEFETs) provide the possibility of simplifying the display pixilation design as they integrate the drive-transistor and the light emission in a single architecture. However, in p-type LEFETs, simultaneously achieving higher external quantum efficiency (EQE) at higher brightness, larger and stable emission area, and high switching speed are the limiting factors for to realise their applications. Herein, we present a p-type polymer heterostructure-based LEFET architecture with electron and hole injection interlayers to improve the charge injection into the light-emitting layer, which leads to better recombination. This device structure provides access to hole mobility of ~2.1 cm² V⁻¹ s⁻¹ and EQE of 1.6% at a luminance of 2600 cd m⁻². Most importantly, we observed a large area emission under the entire drain electrode, which was spatially stable (emission area is not dependent on the gate voltage and current density). These results show an important advancement in polymer-based LEFET technology toward realizing new digital display applications.

Sulfonate-Conjugated Polyelectrolytes as Anode Interfacial Layers in Inverted Organic Solar Cells

Conjugated polymers with ionic pendant groups (CPEs) are receiving increasing attention as solution-processed interfacial materials for organic solar cells (OSCs). Various anionic CPEs have been successfully used, on top of ITO (Indium Tin Oxide) electrodes, as solution-processed anode interlayers (AILs) for conventional devices with direct geometry. However, the development of CPE AILs for OSC devices with inverted geometry is an important topic that still needs to be addressed. Here, we have designed three anionic CPEs bearing alkyl-potassium-sulfonate side chains. Their functional behavior as anode interlayers has been investigated in P3HT:PC₆₁BM (poly(3-hexylthiophene): [6,6]-phenyl C61 butyric acid methyl ester) devices with an inverted geometry, using a hole collecting silver electrode evaporated on top. Our results reveal that to obtain effective anode modification, the CPEs' conjugated backbone has to be tailored to grant self-doping and to have a good energy-level match with the photoactive layer. Furthermore, the sulfonate moieties not only ensure the solubility in polar orthogonal solvents, induce self-doping via a right choice of the conjugated backbone, but also play a role in the gaining of hole selectivity of the top silver electrode.

Electrochemiluminescent Transistors: A New Strategy toward Light-Emitting Switching Devices

Light-emitting transistors (LETs) have attracted a significant amount of interest as multifunctional building blocks for next-generation electronics and optoelectronic devices. However, it is challenging to obtain LETs with a high carrier mobility and uniform light-emission because the semiconductor channel should provide both the electrical charge transport and optical light-emission, and typical emissive semiconductors have low, imbalanced carrier mobilities. In this work, a novel device platform that adapts the electrochemiluminescence (ECL) principle in LETs, referred to as an ECL transistor (ECLT) is proposed. ECL is a light-emission phenomenon from electrochemically excited luminophores generated by redox reactions. A solid-state ECL electrolyte consisting of a network-forming polymer, ionic liquid, luminophore, and co-reactant is employed as the light-emitting gate insulator of the ECLT. Based on this construction, high-performance LETs that make use of various conventional non-emissive semiconductors (e.g., poly(3-hexylthiophene), zinc oxide, and reduced graphene oxide) are successfully demonstrated. All the devices exhibit a high mobility (0.9-10 cm² V^-1 s^-1 ) and a uniform light-emission. This innovative approach demonstrates a novel LET platform and provides a promising pathway to achieve significant breakthroughs to develop electronic circuits and optoelectronic applications.

Foldable semi-ladder polymers: novel aggregation behavior and high-performance solution-processed organic light-emitting transistors

A critical issue in developing high-performance organic light-emitting transistors (OLETs) is to balance the trade-off between charge transport and light emission in a semiconducting material. Although traditional materials for organic light-emitting diodes (OLEDs) or organic field-effect transistors (OFETs) have shown modest performance in OLET devices, design strategies towards high-performance OLET materials and the crucial structure–performance relationship remain unclear. Our research effort in developing cross-conjugated weak acceptor-weak donor copolymers for luminescent properties lead us to an unintentional discovery that these copolymers form coiled foldamers with intramolecular H-aggregation, leading to their exceptional OLET properties. An impressive external quantum efficiency (EQE) of 6.9% in solution-processed multi-layer OLET devices was achieved.

Coiled foldamers with intramolecular H-aggregation in semi-ladder copolymers lead towards the highest EQE of 6.9% in solution-processed multi-layer OLETs.

On the Nature of Charge-Injecting Contacts in Organic Field-Effect Transistors

Organic field-effect transistors (OFETs) are key enabling devices for plastic electronics technology, which has a potentially disruptive impact on a variety of application fields, such as health, safety, and communication. Despite the tremendous advancements in understanding the OFET working mechanisms and device performance, further insights into the complex correlation between the nature of the charge-injecting contacts and the electrical characteristics of devices are still necessary. Here, an in-depth study of the metal-organic interfaces that provides a direct correlation to the performance of OFET devices is reported. The combination of synchrotron X-ray spectroscopy, atomic force microscopy, electron microscopy, and theoretical simulations on two selected electron transport organic semiconductors with tailored chemical structures allows us to gain insights into the nature of the injecting contacts. This multiple analysis repeated at the different stages of contact formation provides a clear picture on the synergy between organic/metal interactions, interfacial morphology, and structural organization of the electrode. The simultaneous synchrotron X-ray experiments and electrical measurements of OFETs in operando uncovers how the nature of the charge-injecting contacts has a direct impact on the injection potential of OFETs.

Nanostructured Organic/Hybrid Materials and Components in Miniaturized Optical and Chemical Sensors

In the last decade, biochemical sensors have brought a disruptive breakthrough in analytical chemistry and microbiology due the advent of technologically advanced systems conceived to respond to specific applications. From the design of a multitude of different detection modalities, several classes of sensor have been developed over the years. However, to date they have been hardly used in point-of-care or in-field applications, where cost and portability are of primary concern. In the present review we report on the use of nanostructured organic and hybrid compounds in optoelectronic, electrochemical and plasmonic components as constituting elements of miniaturized and easy-to-integrate biochemical sensors. We show how the targeted design, synthesis and nanostructuring of organic and hybrid materials have enabled enormous progress not only in terms of modulation and optimization of the sensor capabilities and performance when used as active materials, but also in the architecture of the detection schemes when used as structural/packing components. With a particular focus on optoelectronic, chemical and plasmonic components for sensing, we highlight that the new concept of having highly-integrated architectures through a system-engineering approach may enable the full expression of the potential of the sensing systems in real-setting applications in terms of fast-response, high sensitivity and multiplexity at low-cost and ease of portability.

Benzothiadiazole-based conjugated polyelectrolytes for interfacial engineering in optoelectronic devices

Polar semiconducting polymers based on a conjugated polymer backbone endowed with chemically anchored polar groups on the side chains have proved to be particularly interesting as optimization layer at organic/cathode interface in optoelectronic devices. In particular, the pendant phosphonate groups impart water-alcohol solubility allowing easy solution processing, and improve electron injection thanks to both a favorable interfacial dipole of phosphonate groups and an intense coordination interaction between the phosphonate groups and Al cathode. In this work we synthesize alternating fluorene-benzothiadiazole copolymers by proposing a post-polymerization reaction to insert the phosphonate groups. Thanks to this approach it is possible to use standard Suzuki coupling conditions, simplifying the process of synthesis, purification and characterization. The polymer Poly[9,9-bis(6′-diethoxylphosphorylhexyl)-alt-benzothiadiazole] (P2), is tested in conventional organic solar cells as cathode interfacial layers showing, with respect to the control device, an increasing of all the photovoltaic parameters, with a final power conversion efficiency that reaches 5.35% starting from 4.6%. The same trend is observed for multilayered polymer light-emitting diodes with an external quantum efficiency of the P2-based PLED enhanced of 1.5 times with respect to the basic devices with bare Al cathode, and negligible roll-off efficiency. The synergic effects of energy gap modulation and of polar phosphonated pendant functionalities of P2 are compared with the corresponding fluorene-based polar homopolymer. Our results show that, not only a proper selection of side functionalities, but also the tailoring of the energy gap of cathode interfacial materials (CIMs) is a possible effective strategy to engineer cathode of different optoelectronic devices and enhance their performance.

Mobility Evaluation of [1]Benzothieno[3,2- b][1]benzothiophene Derivatives: Limitation and Impact on Charge Transport

Among contemporary semiconductors, many of the best performing materials are based on [1]benzothieno[3,2- b][1]benzothiophene (BTBT). Alkylated derivatives of these small molecules not only provide high hole mobilities but also can be easily processed by thermal vacuum or solution deposition methods. Over the last decade, numerous publications have investigated molecular structures and charge transport properties to elucidate what makes these molecules so special. However, the race toward ever higher mobilities resulted in significantly deviating values, which exacerbates linking molecular structure to electronic properties. Moreover, a recently arisen debate on overestimation of organic field-effect transistor mobilities calls for a revaluation of these numbers. We synthesized and characterized four BTBT derivatives with either one or two alkyl chains (themselves consisting of either 8 or 10 carbon atoms) and investigated their spectroscopic, structural, and electrical properties. By employing two-probe, gated four-point probe and gated van der Pauw measurements, we compare field-effect mobility values at room and low temperatures and discuss their feasibility and viability. We attribute mobility changes to different angles between molecule planes and core-to-core double-layer stacking of asymmetric BTBT derivatives and show higher mobilities in the presence of more and longer alkyl chains. A so-called "zipper effect" brings BTBT cores in closer proximity promoting stronger intermolecular orbital coupling and hence higher charge transport.

A bifunctional conjugated polyelectrolyte for the interfacial engineering of polymer solar cells

In this work a novel combination of side chain functionalities, alkyl-phosphonate (EP) and alkyl-ammonium bromide (NBr) groups, on a polyfluorene backbone (PF-NBr-EP) was studied as cathode interfacial material (CIM) in polymer-based solar cells. The devices were made with a conventional geometry, with PTB7:PC₇₁ BM as active layer and aluminum as metal electrode. The CIM showed good solubility in ethanol and film forming ability onto the active layer so that its deposition could be finely tuned. The interface engineering imparted by this CIM was assessed and discussed through kelvin probe force microscopy (KPFM), impedance spectroscopy, charge recombination and electron transport characterizations. To discriminate between the interfacial modifications imparted by the interlayer and its solvent, we included in this study a surface ethanol treated device. In the optimized conditions an average power conversion efficiency of 7.24% was obtained, which is about 60% higher when compared to devices made with bare Al and 26% when compared to devices made with a standard calcium/aluminum cathode. Besides performances, some insights about the devices shelf life stability are also presented. A good persistency through aging was found for the cathode interfacial engineering capabilities of PF-NBr-EP.