1
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Wang K, Paxson A, Valdez TI, Erlat A, Lee PC, Yun S, Khajanji P, Zhang Z, Kummel AC, Bandaru P. Enhanced Corrosion Resistance in Aluminum-Based Electrolyzer Components via Stoichiometry Tuned Atomic Layer-Deposited TiO x Films. ACS APPLIED MATERIALS & INTERFACES 2024; 16:35043-35052. [PMID: 38941589 DOI: 10.1021/acsami.4c05450] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/30/2024]
Abstract
Titanium (Ti) is widely used as anode current collectors in proton exchange membrane (PEM)-based water electrolyzers due to its self-passivated oxide layer, which protects it from corrosion in acidic solutions. However, the cost of the material and machining process for Ti is high. A wider utilization of water electrolyzers to produce hydrogen could be favored by the use of less expensive coated aluminum (Al) substrates, which could potentially replace high-cost Ti-based components. It is shown here by depositing a pinhole-free oxygen vacancy-rich titanium oxide (TiOx) protection layer by atomic layer deposition (ALD), the corrosion resistance of Al substrates in acidic environments at oxygen evolution potentials can be enhanced. The optimization of the oxygen vacancy concentration is accomplished by tuning the ALD parameters to achieve ideal stoichiometry and conformal coating on rough substrates. The robustness of the coatings was evaluated at high potentials (2.4 V vs NHE = normal hydrogen electrode) in low pH conditions. A low TiOx dissolution rate of the order of ∼6 nm year-1 was observed. By testing under industrially relevant conditions, i.e., high applied voltages (2.4 V) and low pH, an Al loss at around the zero ppb level was achieved using optimized ALD parameters. It is proposed that a 40 nm TiOx coating on Al may be adequate to provide 60,000 h of durability in a PEM water electrolyzer anode current collector.
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Affiliation(s)
- Kesong Wang
- Department of Mechanical and Aerospace Engineering, University of California San Diego, La Jolla, San Diego, California 92093, United States
| | - Adam Paxson
- Plug Power, Latham, New York 12110, United States
| | | | - Ahmet Erlat
- Plug Power, Latham, New York 12110, United States
| | - Ping-Che Lee
- Materials Science and Engineering Program, University of California San Diego, La Jolla, San Diego, California 92093, United States
| | - Seonguk Yun
- Materials Science and Engineering Program, University of California San Diego, La Jolla, San Diego, California 92093, United States
| | - Pranjali Khajanji
- Materials Science and Engineering Program, University of California San Diego, La Jolla, San Diego, California 92093, United States
| | - Zichen Zhang
- Materials Science and Engineering Program, University of California San Diego, La Jolla, San Diego, California 92093, United States
| | - Andrew C Kummel
- Materials Science and Engineering Program, University of California San Diego, La Jolla, San Diego, California 92093, United States
- Department of Chemistry and Biochemistry, University of California San Diego, La Jolla, California 92093, United States
| | - Prabhakar Bandaru
- Department of Mechanical and Aerospace Engineering, University of California San Diego, La Jolla, San Diego, California 92093, United States
- Materials Science and Engineering Program, University of California San Diego, La Jolla, San Diego, California 92093, United States
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2
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Zhang Z, Liu Y, Yan H, Hu C, Huang Y. Ultralong-Term Durable Anticorrosive Coatings by Integration of Double-Layered Transfer Self-Healing Ability, Fe Ion-Responsive Ability, and Active/Passive Functional Partitioning. ACS APPLIED MATERIALS & INTERFACES 2024; 16:1564-1577. [PMID: 38123138 DOI: 10.1021/acsami.3c15802] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/23/2023]
Abstract
The application of self-healing polymers in corrosion protection is often limited by their slow and nonautonomous healing ability and poor long-term durability. In this paper, we propose a double-layered transfer self-healing coating constructed by soft and rigid polymer layers. The soft polymer has a fast self-healing rate of 10 min to repair, which was found to accelerate the self-healing of the upper rigid layer. The rigid polymer provided relatively high barrier ability while preserving certain self-healing ability owing to the shear-thinning effect. In this way, the double-layered coating combined rapid self-healing (∼1 h) and high impedance modulus |Z|f-0.01 Hz of 2.58 × 1010 Ω·cm2. Furthermore, the introduction of pyridine groups in B-PEA and polyacrylate-grafted-polydimethylsiloxane (PEA-g-PDMS) induced the Fe ion-responsive ability and shortened the self-healing time to 40 min (100 ppm Fe). Finally, barrier and anode sacrificed layers were introduced to produce multilayered architecture with active/passive anticorrosion performance. In the presence of scratches, the |Z|f-0.01 Hz can be preserved at 1.03 × 1010 Ω·cm2 after 200 days. The created anticorrosive coating technology combines long-term durability with room temperature autonomous rapid self-healing capability, providing a broad prospect for anticorrosive applications.
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Affiliation(s)
- Zihong Zhang
- State Key Laboratory of Environmental-Friendly Energy Materials, Southwest University of Science and Technology, Mianyang 621010, China
- School of Material Science and Engineering, Southwest University of Science and Technology, Mianyang, Sichuan 621010, China
| | - Ying Liu
- State Key Laboratory of Environmental-Friendly Energy Materials, Southwest University of Science and Technology, Mianyang 621010, China
- School of Material Science and Engineering, Southwest University of Science and Technology, Mianyang, Sichuan 621010, China
| | - Hui Yan
- Mianyang Maxwell Technology Co., Ltd.,, Mianyang 621010, China
| | - Chengyao Hu
- School of Material Science and Engineering, Southwest University of Science and Technology, Mianyang, Sichuan 621010, China
| | - Yawen Huang
- State Key Laboratory of Environmental-Friendly Energy Materials, Southwest University of Science and Technology, Mianyang 621010, China
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3
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Steins H, Mierzejewski M, Brauns L, Stumpf A, Kohler A, Heusel G, Corna A, Herrmann T, Jones PD, Zeck G, von Metzen R, Stieglitz T. A flexible protruding microelectrode array for neural interfacing in bioelectronic medicine. MICROSYSTEMS & NANOENGINEERING 2022; 8:131. [PMID: 36568135 PMCID: PMC9772315 DOI: 10.1038/s41378-022-00466-z] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/11/2022] [Revised: 06/23/2022] [Accepted: 07/07/2022] [Indexed: 05/31/2023]
Abstract
Recording neural signals from delicate autonomic nerves is a challenging task that requires the development of a low-invasive neural interface with highly selective, micrometer-sized electrodes. This paper reports on the development of a three-dimensional (3D) protruding thin-film microelectrode array (MEA), which is intended to be used for recording low-amplitude neural signals from pelvic nervous structures by penetrating the nerves transversely to reduce the distance to the axons. Cylindrical gold pillars (Ø 20 or 50 µm, ~60 µm height) were fabricated on a micromachined polyimide substrate in an electroplating process. Their sidewalls were insulated with parylene C, and their tips were optionally modified by wet etching and/or the application of a titanium nitride (TiN) coating. The microelectrodes modified by these combined techniques exhibited low impedances (~7 kΩ at 1 kHz for Ø 50 µm microelectrode with the exposed surface area of ~5000 µm²) and low intrinsic noise levels. Their functionalities were evaluated in an ex vivo pilot study with mouse retinae, in which spontaneous neuronal spikes were recorded with amplitudes of up to 66 µV. This novel process strategy for fabricating flexible, 3D neural interfaces with low-impedance microelectrodes has the potential to selectively record neural signals from not only delicate structures such as retinal cells but also autonomic nerves with improved signal quality to study neural circuits and develop stimulation strategies in bioelectronic medicine, e.g., for the control of vital digestive functions.
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Affiliation(s)
- Helen Steins
- NMI Natural and Medical Sciences Institute at the University of Tübingen, Reutlingen, Germany
- Laboratory for Biomedical Microtechnology, Department of Microsystems Engineering, University of Freiburg, Freiburg, Germany
| | - Michael Mierzejewski
- NMI Natural and Medical Sciences Institute at the University of Tübingen, Reutlingen, Germany
| | - Lisa Brauns
- NMI Natural and Medical Sciences Institute at the University of Tübingen, Reutlingen, Germany
| | - Angelika Stumpf
- NMI Natural and Medical Sciences Institute at the University of Tübingen, Reutlingen, Germany
| | - Alina Kohler
- NMI Natural and Medical Sciences Institute at the University of Tübingen, Reutlingen, Germany
| | - Gerhard Heusel
- NMI Natural and Medical Sciences Institute at the University of Tübingen, Reutlingen, Germany
| | - Andrea Corna
- NMI Natural and Medical Sciences Institute at the University of Tübingen, Reutlingen, Germany
- Institute of Biomedical Electronics, TU Wien, Vienna, Austria
| | - Thoralf Herrmann
- NMI Natural and Medical Sciences Institute at the University of Tübingen, Reutlingen, Germany
| | - Peter D. Jones
- NMI Natural and Medical Sciences Institute at the University of Tübingen, Reutlingen, Germany
| | - Günther Zeck
- NMI Natural and Medical Sciences Institute at the University of Tübingen, Reutlingen, Germany
- Institute of Biomedical Electronics, TU Wien, Vienna, Austria
| | - Rene von Metzen
- NMI Natural and Medical Sciences Institute at the University of Tübingen, Reutlingen, Germany
| | - Thomas Stieglitz
- Laboratory for Biomedical Microtechnology, Department of Microsystems Engineering, University of Freiburg, Freiburg, Germany
- Bernstein Center Freiburg, University of Freiburg, Freiburg, Germany
- BrainLinks-BrainTools, University of Freiburg, Freiburg, Germany
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4
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Schmelz D, Gerold K, Käsebier T, Sergeev N, Szeghalmi A, Zeitner UD. Optical properties of black silicon structures ALD-coated with Al 2O 3. NANOTECHNOLOGY 2022; 34:015704. [PMID: 36164977 DOI: 10.1088/1361-6528/ac9419] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/21/2022] [Accepted: 09/22/2022] [Indexed: 05/27/2023]
Abstract
Atomic layer deposited (ALD) Al2O3coatings were applied on black silicon (b-Si) structures. The coated nanostructures were investigated regarding their reflective and transmissive behaviour. For a systematic study of the influence of the Al2O3coating, ALD coatings with a varying layer thickness were deposited on three b-Si structures with different morphologies. With a scanning electron microscope the morphological evolution of the coating process on the structures was examined. The optical characteristics of the different structures were investigated by spectral transmission and reflection measurements. The usability of the structures for highly efficient absorbers and antireflection (AR) functionalities in the different spectral regions is discussed.
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Affiliation(s)
- David Schmelz
- Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University Jena, Germany
| | - Kristin Gerold
- Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University Jena, Germany
- Fraunhofer Institute for Applied Optics and Precision Engineering IOF, Jena, Germany
| | - Thomas Käsebier
- Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University Jena, Germany
| | - Natali Sergeev
- Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University Jena, Germany
| | - Adriana Szeghalmi
- Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University Jena, Germany
- Fraunhofer Institute for Applied Optics and Precision Engineering IOF, Jena, Germany
| | - Uwe D Zeitner
- Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University Jena, Germany
- Fraunhofer Institute for Applied Optics and Precision Engineering IOF, Jena, Germany
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5
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Nguyen VH, Akbari M, Sekkat A, Ta HTT, Resende J, Jiménez C, Musselman KP, Muñoz-Rojas D. Atmospheric atomic layer deposition of SnO 2 thin films with tin(II) acetylacetonate and water. Dalton Trans 2022; 51:9278-9290. [PMID: 35670303 DOI: 10.1039/d2dt01427k] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Due to its unique optical, electrical, and chemical properties, tin dioxide (SnO2) thin films attract enormous attention as a potential material for gas sensors, catalysis, low-emissivity coatings for smart windows, transparent electrodes for low-cost solar cells, etc. However, the low-cost and high-throughput fabrication of SnO2 thin films without producing corrosive or toxic by-products remains challenging. One appealing deposition technique, particularly well-adapted to films presenting nanometric thickness is atomic layer deposition (ALD). In this work, several metalorganic tin-based complexes, namely, tin(IV) tert-butoxide, bis[bis(trimethylsilyl)amino] tin(II), dibutyltin diacetate, tin(II) acetylacetonate, tetrakis(dimethylamino) tin(IV), and dibutyltin bis(acetylacetonate), were explored thanks to DFT calculations. Our theoretical calculations suggest that the three last precursors are very appealing for ALD of SnO2 thin films. The potential use of these precursors for atmospheric-pressure spatial atomic layer deposition (AP-SALD) is also discussed. For the first time, we experimentally demonstrate the AP-SALD growth of SnO2 thin films using tin(II) acetylacetonate (Sn(acac)2) and water. We observe that Sn(acac)2 exhibits efficient ALD activity with a relatively large ALD temperature window (140-200 °C), resulting in a growth rate of 0.85 ± 0.03 Å per cyc. XPS analyses show a single Sn 3d5/2 characteristic peak for Sn4+ at 486.8 ± 0.3 eV, indicating that a pure SnO2 phase is obtained within the ALD temperature window. The as-deposited SnO2 thin films are in all cases amorphous, and film conductivity increases with the deposition temperature. Hall effect measurements confirm the n-type nature of SnO2 with a free electron density of about 8 × 1019 cm-3, electron mobility up to 11.2 cm2 V-1 s-1, and resistivity of 7 × 10-3 Ω cm for samples deposited at 270 °C.
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Affiliation(s)
- Viet Huong Nguyen
- Faculty of Materials Science and Engineering, Phenikaa University, Hanoi 12116, Vietnam.
| | - Masoud Akbari
- Univ. Grenoble Alpes, CNRS, Grenoble INP, LMGP, Grenoble, France. .,Department of Mechanical and Mechatronics Engineering, University of Waterloo, Canada
| | | | - Huong T T Ta
- Faculty of Materials Science and Engineering, Phenikaa University, Hanoi 12116, Vietnam.
| | - Joao Resende
- AlmaScience Colab, Madan Parque, 2829-516 Caparica, Portugal
| | - Carmen Jiménez
- Univ. Grenoble Alpes, CNRS, Grenoble INP, LMGP, Grenoble, France.
| | - Kevin P Musselman
- Department of Mechanical and Mechatronics Engineering, University of Waterloo, Canada
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6
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Willis SA, McGuinness EK, Li Y, Losego MD. Re-examination of the Aqueous Stability of Atomic Layer Deposited (ALD) Amorphous Alumina (Al 2O 3) Thin Films and the Use of a Postdeposition Air Plasma Anneal to Enhance Stability. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2021; 37:14509-14519. [PMID: 34851123 DOI: 10.1021/acs.langmuir.1c02574] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Amorphous aluminum oxide (alumina) thin films are of interest as inert chemical barriers for various applications. However, the existing literature on the aqueous stability of atomic layer deposited (ALD) amorphous alumina thin films remains incomplete and, in some cases, inconsistent. Because these films have a metastable amorphous structure─which is likely partially hydrated in the as-deposited state─hydration and degradation behavior likely deviate from what is expected for the equilibrium, crystalline Al2O3 phase. Deposition conditions and the aqueous solution composition (ion content) appear to influence the reactivity and stability of amorphous ALD alumina films, but a full understanding of why these alumina films hydrate, solvate, and/or dissolve in near-neutral pH = 7 conditions, for which crystalline Al2O3 is expected to be stable, remains unsolved. In this work, we conduct an extensive X-ray photoelectron spectroscopy investigation of the surface chemistry as a function of water immersion time to reveal the formation of oxyhydroxide (AlOOH), hydroxide (Al(OH)3), and possible carbonate species. We further show that brief postdeposition exposures of these ALD alumina films to an air plasma anneal can significantly enhance the film's stability in near-neutral pH aqueous conditions. The simplicity and effectiveness of this plasma treatment may provide a new alternative to thermal annealing and capping treatments typically used to promote aqueous stability of low-temperature ALD metal oxide barrier layers.
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Affiliation(s)
- Simon A Willis
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Emily K McGuinness
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Yi Li
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Mark D Losego
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
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7
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Dogan G, Demir SO, Gutzler R, Gruhn H, Dayan CB, Sanli UT, Silber C, Culha U, Sitti M, Schütz G, Grévent C, Keskinbora K. Bayesian Machine Learning for Efficient Minimization of Defects in ALD Passivation Layers. ACS APPLIED MATERIALS & INTERFACES 2021; 13:54503-54515. [PMID: 34735111 PMCID: PMC8603353 DOI: 10.1021/acsami.1c14586] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/01/2021] [Accepted: 10/07/2021] [Indexed: 06/13/2023]
Abstract
Atomic layer deposition (ALD) is an enabling technology for encapsulating sensitive materials owing to its high-quality, conformal coating capability. Finding the optimum deposition parameters is vital to achieving defect-free layers; however, the high dimensionality of the parameter space makes a systematic study on the improvement of the protective properties of ALD films challenging. Machine-learning (ML) methods are gaining credibility in materials science applications by efficiently addressing these challenges and outperforming conventional techniques. Accordingly, this study reports the ML-based minimization of defects in an ALD-Al2O3 passivation layer for the corrosion protection of metallic copper using Bayesian optimization (BO). In all experiments, BO consistently minimizes the layer defect density by finding the optimum deposition parameters in less than three trials. Electrochemical tests show that the optimized layers have virtually zero film porosity and achieve five orders of magnitude reduction in corrosion current as compared to control samples. Optimized parameters of surface pretreatment using Ar/H2 plasma, the deposition temperature above 200 °C, and 60 ms pulse time quadruple the corrosion resistance. The significant optimization of ALD layers presented in this study demonstrates the effectiveness of BO and its potential outreach to a broader audience, focusing on different materials and processes in materials science applications.
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Affiliation(s)
- Gül Dogan
- Robert
Bosch GmbH, Automotive Electronics, Postfach 13 42, 72703 Reutlingen, Germany
- Max
Planck Institute for Intelligent Systems, Heisenbergstr 3, 70569 Stuttgart, Germany
| | - Sinan O. Demir
- Max
Planck Institute for Intelligent Systems, Heisenbergstr 3, 70569 Stuttgart, Germany
| | - Rico Gutzler
- Max
Planck Institute for Solid State Research, Heisenbergstr 1, 70569 Stuttgart, Germany
| | - Herbert Gruhn
- Robert
Bosch GmbH, Corporate Sector Research and Advance Engineering , Robert-Bosch-Campus1, 71272 Stuttgart, Germany
| | - Cem B. Dayan
- Max
Planck Institute for Intelligent Systems, Heisenbergstr 3, 70569 Stuttgart, Germany
| | - Umut T. Sanli
- Max
Planck Institute for Intelligent Systems, Heisenbergstr 3, 70569 Stuttgart, Germany
| | - Christian Silber
- Robert
Bosch GmbH, Automotive Electronics, Postfach 13 42, 72703 Reutlingen, Germany
| | - Utku Culha
- Max
Planck Institute for Intelligent Systems, Heisenbergstr 3, 70569 Stuttgart, Germany
| | - Metin Sitti
- Max
Planck Institute for Intelligent Systems, Heisenbergstr 3, 70569 Stuttgart, Germany
| | - Gisela Schütz
- Max
Planck Institute for Intelligent Systems, Heisenbergstr 3, 70569 Stuttgart, Germany
| | - Corinne Grévent
- Robert
Bosch GmbH, Automotive Electronics, Postfach 13 42, 72703 Reutlingen, Germany
| | - Kahraman Keskinbora
- Max
Planck Institute for Intelligent Systems, Heisenbergstr 3, 70569 Stuttgart, Germany
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8
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Knemeyer K, Baumgarten R, Ingale P, Naumann d'Alnoncourt R, Driess M, Rosowski F. Toolbox for atomic layer deposition process development on high surface area powders. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2021; 92:025115. [PMID: 33648082 DOI: 10.1063/5.0037844] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/16/2020] [Accepted: 01/29/2021] [Indexed: 06/12/2023]
Abstract
Atomic layer deposition (ALD) is an industrially applied technique for thin film deposition. The vast majority of processes target flat substrates rather than powders. For ALD on powders, new processes are needed, as different reaction conditions are required. Here, two setups are described in detail, which enhance the ALD process development for powders. The first setup described is capable of directly measuring the vapor pressure of a given precursor by a capacitance diaphragm gauge. Promising precursors can be pre-selected, and suitable precursor saturation temperatures can be determined. The second setup consists of four parallel reactors with individual temperature zones to screen the optimal ALD temperature window in a time efficient way. Identifying the precursor saturation temperature beforehand and subsequently performing the first ALD half cycle in the parallel setup at four different reactor temperatures simultaneously will drastically reduce process development times. Validation of both setups is shown for the well-known ALD precursors, trimethylaluminum to deposit aluminum oxide and diethyl zinc to deposit zinc oxide, both on amorphous silica powder.
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Affiliation(s)
- K Knemeyer
- BasCat-UniCat BASF JointLab, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany
| | - R Baumgarten
- BasCat-UniCat BASF JointLab, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany
| | - P Ingale
- BasCat-UniCat BASF JointLab, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany
| | - R Naumann d'Alnoncourt
- BasCat-UniCat BASF JointLab, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany
| | - M Driess
- BasCat-UniCat BASF JointLab, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany
| | - F Rosowski
- BasCat-UniCat BASF JointLab, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany
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9
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Krýsová H, Neumann-Spallart M, Tarábková H, Janda P, Kavan L, Krýsa J. Atomic layer deposited films of Al 2O 3 on fluorine-doped tin oxide electrodes: stability and barrier properties. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2021; 12:24-34. [PMID: 33489664 PMCID: PMC7801786 DOI: 10.3762/bjnano.12.2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/21/2020] [Accepted: 11/30/2020] [Indexed: 06/12/2023]
Abstract
Al2O3 layers were deposited onto electrodes by atomic layer deposition. Solubility and electron-transport blocking were tested. Films deposited onto fluorine-doped tin oxide (FTO, F:SnO2/glass) substrates blocked electron transfer to redox couples (ferricyanide/ferrocyanide) in aqueous media. However, these films were rapidly dissolved in 1 M NaOH (≈100 nm/h). The dissolution was slower in 1 M H2SO4 (1 nm/h) but after 24 h the blocking behaviour was entirely lost. The optimal stability was reached at pH 7.2 where no changes were found up to 24 h and even after 168 h of exposure the changes in the blocking behaviour were still minimal. This behaviour was also observed for protection against direct reduction of FTO.
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Affiliation(s)
- Hana Krýsová
- J. Heyrovsky Institute of Physical Chemistry, Czech Academy of Sciences, Dolejškova 2155/3, 182 23 Prague 8, Czech Republic
| | - Michael Neumann-Spallart
- Department of Inorganic Technology, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic
| | - Hana Tarábková
- J. Heyrovsky Institute of Physical Chemistry, Czech Academy of Sciences, Dolejškova 2155/3, 182 23 Prague 8, Czech Republic
| | - Pavel Janda
- J. Heyrovsky Institute of Physical Chemistry, Czech Academy of Sciences, Dolejškova 2155/3, 182 23 Prague 8, Czech Republic
| | - Ladislav Kavan
- J. Heyrovsky Institute of Physical Chemistry, Czech Academy of Sciences, Dolejškova 2155/3, 182 23 Prague 8, Czech Republic
| | - Josef Krýsa
- Department of Inorganic Technology, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic
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10
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Gupta RN. Study of pulse electrodeposition parameters for nano YSZ-Ni coatings and its effect on tribological and corrosion characteristics. APPLIED NANOSCIENCE 2021. [DOI: 10.1007/s13204-020-01567-9] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/24/2022]
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11
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Kim G, Kim CM, Jeong J, Woo HJ, Kwon SH, Yang H. Simple electrochemical method for monitoring the time-dependent dissolution behavior of layers deposited by atomic layer deposition. J Electroanal Chem (Lausanne) 2020. [DOI: 10.1016/j.jelechem.2020.114550] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
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12
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Dogan G, Sanli UT, Hahn K, Müller L, Gruhn H, Silber C, Schütz G, Grévent C, Keskinbora K. In Situ X-ray Diffraction and Spectro-Microscopic Study of ALD Protected Copper Films. ACS APPLIED MATERIALS & INTERFACES 2020; 12:33377-33385. [PMID: 32551474 DOI: 10.1021/acsami.0c06873] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
In many applications of copper in industry and research, copper migration and degradation of metallic copper to its oxides is a common problem. There are numerous ways to overcome this degradation with varying success. Atomic layer deposition (ALD) based encapsulation and passivation of the metallic copper recently emerged as a serious route to success owing to the conformality and density of the ALD films. So far, the majority of the studies have been focused on corrosion protection of copper in a variety of chemical environments, mostly at ambient temperature. An investigation of the stability of the ALD film stacks and copper's interaction with them at elevated temperatures has been lacking. Here, we study the mitigation of copper oxidation and migration in 50 nm thick Al2O3/TiO2 and Al2O3/SiO2 bilayer ALD stacks. First, the corrosion dynamics were investigated via in situ X-ray diffraction (XRD) at 350 °C under atmospheric conditions, and second, the interaction of copper with the passivation layers have been examined post factum using detailed spectro-microscopic investigations. According to the XRD results, both ALD films exhibited excellent oxidation protection. In contrast, bare Cu immediately started to oxidize at 350 °C and transformed entirely to its known oxide phases in 4 h. Spectro-microscopic studies revealed that there are structural and chemical changes on the top surface and within the film stacks. The TiO2 layer was crystallized during annealing, while the SiO2 layer stayed in the amorphous phase, which was analyzed by grazing incidence XRD and transmission electron microscopy. According to scanning electron microscopy and X-ray photoelectron spectroscopy analysis, copper was detected on the surface with a higher amount in Al2O3/TiO2 than Al2O3/SiO2, 5.2 at.% and 0.7 at.%, respectively. Based on the surface and cross-sectional analysis, copper migration was observed on both layers, albeit more substantially in Al2O3/TiO2. In the case of Al2O3/SiO2, the bulk of the copper was captured at the interface of the two oxides.
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Affiliation(s)
- Gül Dogan
- Robert Bosch GmbH, Automotive Electronics, Postfach 13 42, 72703 Reutlingen, Germany
- Max Planck Institute for Intelligent Systems, Heisenbergstrasse 3, 70569 Stuttgart, Germany
| | - Umut T Sanli
- Max Planck Institute for Intelligent Systems, Heisenbergstrasse 3, 70569 Stuttgart, Germany
| | - Kersten Hahn
- Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569 Stuttgart, Germany
| | - Lutz Müller
- Robert Bosch GmbH, Automotive Electronics, Postfach 13 42, 72703 Reutlingen, Germany
| | - Herbert Gruhn
- Robert Bosch GmbH, Corporate Sector Research and Advance Engineering, Robert-Bosch-Campus1, 71272 Stuttgart, Germany
| | - Christian Silber
- Robert Bosch GmbH, Automotive Electronics, Postfach 13 42, 72703 Reutlingen, Germany
| | - Gisela Schütz
- Max Planck Institute for Intelligent Systems, Heisenbergstrasse 3, 70569 Stuttgart, Germany
| | - Corinne Grévent
- Robert Bosch GmbH, Automotive Electronics, Postfach 13 42, 72703 Reutlingen, Germany
| | - Kahraman Keskinbora
- Max Planck Institute for Intelligent Systems, Heisenbergstrasse 3, 70569 Stuttgart, Germany
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Landeke-Wilsmark B, Nyholm L, Hägglund C. Seeded Growth of Large-Area Arrays of Substrate Supported Au Nanoparticles Using Citrate and Hydrogen Peroxide. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2020; 36:6848-6858. [PMID: 32531167 PMCID: PMC7467740 DOI: 10.1021/acs.langmuir.0c00374] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/15/2023]
Abstract
While seeded growth of quasi-spherical colloidal Au nanoparticles (NPs) has been extensively explored in the literature, the growth of surface supported arrays of such particles has received less attention. The latter scenario offers some significant challenges, including the attainment of sufficient particle-substrate adhesion, growth-selectivity, and uniform mass-transport. To this end, a reaction system consisting of HAuCl4, citrate, and H2O2 is here investigated for the growth of supported arrays of 10 nm Au seeds, derived via block copolymer (BCP) lithography. The effects of the reagent concentrations on the properties of the resultant NPs are evaluated. It is found that inclusion of citrate in the growth medium causes substantial particle desorption from Si surfaces. However, the presence of citrate also yields NPs with more uniformly circular top-view cross sections ("quasi-circular"), motivating the exploration of particle immobilization methods. We demonstrate that atomic layer deposition (ALD) of a single cycle of HfO2 (∼1 Å), after the seed particle formation, promotes adhesion sufficiently to enable the use of citrate without the added oxide noticeably affecting the shape of the resultant NPs. The presented ALD-based approach differs from the conventional sequence of depositing the adhesion layer prior to the seed particle formation and may have advantages in various processing schemes, such as when surface grafting of brush layers is required in the BCP lithography process. A proof-of-concept is provided for the growth of large-area arrays of supported "quasi-circular" Au NPs, in a rapid one-step process at room temperature.
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Affiliation(s)
- Björn Landeke-Wilsmark
- Division
of Solar Cell Technology, Department of Materials Sciences and Engineering, Uppsala University, P.O. Box 534, 751 21 Uppsala, Sweden
| | - Leif Nyholm
- Department
of Chemistry − Ångström Laboratory, Uppsala University, P.O. Box 538, 751 21 Uppsala, Sweden
| | - Carl Hägglund
- Division
of Solar Cell Technology, Department of Materials Sciences and Engineering, Uppsala University, P.O. Box 534, 751 21 Uppsala, Sweden
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