Lithium and Silver Co-Doped Nickel Oxide Hole-Transporting Layer Boosting the Efficiency and Stability of Inverted Planar Perovskite Solar Cells

Studies of NiO/Ag/NiO transparent conducting electrodes on NiO and ZnO Schottky diodes

A nickel oxide (NiO)/silver (Ag)/NiO (NAN) transparent conducting electrode (TCE) was deposited on NiO and zinc oxide (ZnO) to fabricate Schottky diodes (SDs). The physical and electrical properties of NAN/NiO and NAN/ZnO SDs were studied. In addition, conventional Au/ZnO SDs were fabricated for comparison. The prepared NAN TCE was of n-type, with more than 40% transmittance and a low sheet resistance of 6.5 Ω sq.-1, indicating that NAN is an exceptional TCE. Secondary ion mass spectrometry revealed that Ag atoms diffused into NiO and ZnO in the NAN/NiO and NAN/ZnO SDs, respectively. Owing to the large number of defects on the ZnO surface, the current-voltage (I-V) characteristics of the Au/ZnO SDs followed a linear curve. However, the reduced number of defects and a large barrier height at the NAN/ZnO interface led to a rectifying I-V curve in NAN/ZnO SDs. In contrast, a near homojunction at the NAN/NiO interface caused a linear I-V curve and a large leakage current in NAN/NiO SDs. These issues resulted in a lower ideality factor (5.32) in NAN/ZnO SDs than that in NAN/NiO SDs (15.14). The NAN/ZnO SDs exhibited a higher barrier height (0.91 eV) than the NAN/NiO SDs (0.55 eV). The mechanism of carrier transport was investigated using a ln(I) versus ln(V) plot. The NAN/NiO SDs only exhibited one region of ohmic conduction. However, two distinct regions were observed in the NAN/ZnO SDs. For V ≤ 0.7 V, the space-charge-limited current dominated; however, the diffusion-recombination model controlled carrier transport at V ≥ 0.7 V. Band diagrams were proposed to elucidate the carrier transport mechanism in NAN/NiO and NAN/ZnO SDs.

Interfacial Layer Materials with a Truxene Core for Dopant-Free NiOx-Based Inverted Perovskite Solar Cells

Nickel oxide (NiOx) is commonly used as a holetransporting material (HTM) in p-i-n perovskite solar cells. However, the weak chemical interaction between the NiOx and CH3NH3PbI3 (MAPbI3) interface results in poor crystallinity, ineffective hole extraction, and enhanced carrier recombination, which are the leading causes for the limited stability and power conversion efficiency (PCE). Herein, two HTMs, TRUX-D1 (N2,N7,N12-tris(9,9-dimethyl-9H-fluoren-2-yl)-5,5,10,10,15,15-hexaheptyl-N2,N7,N12-tris(4-methoxyphenyl)-10,15-dihydro-5H-diindeno[1,2-a:1',2'-c]fluorene-2,7,12-triamine) and TRUX-D2 (5,5,10,10,15,15-hexaheptyl-N2,N7,N12-tris(4-methoxyphenyl)-N2,N7,N12-tris(10-methyl-10H-phenothiazin-3-yl)-10,15-dihydro-5H-diindeno[1,2-a:1',2'-c]fluorene-2,7,12-triamine), are designed with a rigid planar C3 symmetry truxene core integrated with electron-donating amino groups at peripheral positions. The TRUX-D molecules are employed as effective interfacial layer (IFL) materials between the NiOx and MAPbI3 interface. The incorporation of truxene-based IFLs improves the quality of perovskite crystallinity, minimizes nonradiative recombination, and accelerates charge extraction which has been confirmed by various characterization techniques. As a result, the TRUX-D1 exhibits a maximum PCE of up to 20.8% with an impressive long-term stability. The unencapsulated device retains 98% of their initial performance following 210 days of aging in a glove box and 75.5% for the device after 80 days under ambient air condition with humidity over 40% at 25 °C.

Nickel Oxide Hole Injection Layers for Balanced Charge Injection in Quantum Dot Light-Emitting Diodes

Quantum dot (QD) light-emitting diodes (QLEDs) are promising for next-generation displays, but suffer from carrier imbalance arising from lower hole injection compared to electron injection. A defect engineering strategy is reported to tackle transport limitations in nickel oxide-based inorganic hole-injection layers (HILs) and find that hole injection is able to enhance in high-performance InP QLEDs using the newly designed material. Through optoelectronic simulations, how the electronic properties of NiOx affect hole injection efficiency into an InP QD layer, finding that efficient hole injection depends on lowering the hole injection barrier and enhancing the acceptor density of NiOx is explored. Li doping and oxygen enriching are identified as effective strategies to control intrinsic and extrinsic defects in NiOx, thereby increasing acceptor density, as evidenced by density functional theory calculations and experimental validation. With fine-tuned inorganic HIL, InP QLEDs exhibit a luminance of 45 200 cd m-2 and an external quantum efficiency of 19.9%, surpassing previous inorganic HIL-based QLEDs. This study provides a path to designing inorganic materials for more efficient and sustainable lighting and display technologies.

Evaporated Nickel Oxide Films with Slow Annealing and Interface Modification for Perovskite Solar Cells

Electron-beam-evaporated nickel oxide (NiOx) films are known for their high quality, precise control, and suitability for complex structures in perovskite (PVK) solar cells (PSCs). However, untreated NiOx films have inherent challenges, such as surface defects, relatively low intrinsic conductivity, and shallow valence band maximum, which seriously restrict the efficiency and stability of the devices. To address these challenges, we employ a dual coordination optimization strategy. The strategy includes low heating rate annealing of NiOx films and using an aminoguanidine nitrate spin coating process on the surfaces of NiOx films to strategically modify NiOx films itself and the interface of NiOx/PVK. Under the synergistic effect of this dual optimization method, the quality of the films is significantly improved and its p-type characteristics are enhanced. At the same time, the interface defects and energy level alignment of the films are effectively improved, and the charge extraction ability at the interface is improved. The combined treatment significantly improved the efficiency of inverted PSCs, from 17.85% to 20.31%, and enhanced device stability under various conditions. This innovative dual-coordinated optimization strategy provides a clear and effective framework for improving the performance of NiOx films and inverted PSCs.

Elucidating the Effects of Interconnecting Layer Thickness and Bandgap Variations on the Performance of Monolithic Perovskite/Silicon Tandem Solar Cell by wxAMPS

In this study, we investigated the pathways for integration of perovskite and silicon solar cells through variation of the properties of the interconnecting layer (ICL). The user-friendly computer simulation software wxAMPS was used to conduct the investigation. The simulation started with numerical inspection of the individual single junction sub-cell, and this was followed by performing an electrical and optical evaluation of monolithic 2T tandem PSC/Si, with variation of the thickness and bandgap of the interconnecting layer. The electrical performance of the monolithic crystalline silicon and CH₃NH₃PbI₃ perovskite tandem configuration was observed to be the best with the insertion of a 50 nm thick (E_g ≥ 2.25 eV) interconnecting layer, which directly contributed to the optimum optical absorption coverage. These design parameters improved the optical absorption and current matching, while also enhancing the electrical performance of the tandem solar cell, which benefited the photovoltaic aspects through lowering the parasitic loss.

Doping Free and Amorphous NiOx Film via UV Irradiation for Efficient Inverted Perovskite Solar Cells

High crystallization and conductivity are always required for inorganic carrier transport materials for cheap and high-performance inverted perovskite solar cells (PSCs). High temperature and external doping are inevitably introduced and thus greatly hamper the applications of inorganic materials for mass production of flexible and tandem devices. Here, an amorphous and dopant-free inorganic material, Ni3+ -rich NiOx , is reported to be fabricated by a novel UV irradiation strategy, which is facile, easily scaled-up, and energy-saving because all the processing temperatures are below 82 ℃. The as-prepared NiOx film shows highly improved conductivity and hole extraction ability. The rigid and flexible PSCs present the champion efficiencies of 22.45% and 19.7%, respectively. This work fills the gap of preparing metal oxide films at the temperature below 150 °C for inverted PSCs with the high efficiency of >22%. More importantly, this work upgrades the substantial understanding about inorganic materials to function well as efficient carrier transport layers without external doping and high crystallization.

Recent cutting-edge strategies for flexible perovskite solar cells toward commercialization

Flexible perovskite solar cells (f-PSCs) have attracted tremendous attention as a self-power supply for various electronic devices that require high power, various form-factors, and a light-weight power supply. In addition, many studies have investigated scalable and continuous roll-to-roll (R2R) processes, with the aim of mass production and commercialization of f-PSCs. In this review, we focus on the strategies developed in the last three years toward commercialization of high-efficiency, lightweight and ultra-flexible, and reliable perovskite solar modules (f-PSMs). Furthermore, the research perspectives of f-PSCs regarding their future development are addressed.

Advent of alkali metal doping: a roadmap for the evolution of perovskite solar cells

Metal–halide hybrid perovskites have prompted the prosperity of the sustainable energy field and simultaneously demonstrated their great potential in meeting both the growing consumption of energy and the increasing social development requirements.

Rapid photocatalytic degradation of cationic organic dyes using Li-doped Ni/NiO nanocomposites and their electrochemical performance

This work reports novel bi-functional Li-doped Ni/NiO nanocomposites as potential candidates for energy storage and water treatment applications.

High-Efficiency and Stable Inverted Planar Perovskite Solar Cells with Pulsed Laser Deposited Cu-Doped NiOx Hole-Transport Layers

High-quality hole-transport layers (HTLs) with excellent optical and electrical properties play a significant role in achieving high-efficient and stable inverted planar perovskite solar cells (PSCs). In this work, the optoelectronic properties of Cu-doped NiO_x (Cu:NiO_x) films and the photovoltaic performance of PSCs with Cu:NiO_x HTLs were systematically studied. The Cu-doped NiO_x with different doping concentrations was achieved by a high-temperature solid-state reaction, and Cu:NiO_x films were prepared by pulsed laser deposition (PLD). Cu⁺ ion dopants not only occupy the Ni vacancy sites to improve the crystallization quality and increase the hole mobility, but also substitute lattice Ni²⁺ sites and act as acceptors to enhance the hole concentration. As compared to the undoped NiO_x films, the Cu:NiO_x films exhibit a higher electrical conductivity with a faster charge transportation and extraction for PSCs. By employing the prepared Cu:NiO_x films as HTLs for the PSCs, a high photocurrent density of 23.17 mA/cm² and a high power conversion efficiency of 20.41% are obtained, which are superior to those with physical vapor deposited NiO_x HTLs. Meanwhile, the PSC devices show a negligible hysteresis behavior and a long-term air-stability, even without any encapsulation. The results demonstrate that pulsed laser deposited Cu-doped NiO_x film is a promising HTL for realizing high-performance and air-stable PSCs.

Enhancing ultraviolet-to-visible rejection ratio by inserting an intrinsic NiO layer in p-NiO/n-Si heterojunction photodiodes

Conventionally, p-NiO/n-Si (p-n) heterojunction photodiodes (HPDs) exhibit a larger visible response than the ultraviolet response due to the thick Si substrate; hence, it is used as a broadband photodetector with a poor ultraviolet (UV)-to-visible rejection ratio. Herein, an intrinsic NiO (i-NiO) layer is inserted between the p-NiO and the n-Si substrate to fabricate p-NiO/i-NiO/n-Si (p-i-n) HPDs, significantly suppressing leakage current and visible response. Compared with the conventional p-n HPDs, the insertion of the i-NiO layer significantly reduces leakage current by approximately 241 times and enhances the rectification ratio from 13.8 to 3228 for the p-n and p-i-n HPDs. The insertion of an i-NiO layer not only increases the UV-response but also suppresses the visible response. These issues enhance the UV-to-visible rejection ratio from 72.2 in p-n HPDs to 915.3 in p-i-n HPDs. The p-NiO reveals a poorer crystalline structure than the i-NiO film because the Ag dopants accumulate at the grain boundary and inhibit crystalline growth. The Ag diffusion in the Si substrate causes defect states within the Si bandgap, whereas it is retarded by the i-NiO layer in the p-i-n HPDs. The poor crystallinity in the p-NiO and defect states within the Si bandgap contributes to a high leakage current and visible response in p-n HPDs. The p-i-n HPDs demonstrate a higher UV-response due to absorption by the i-NiO layer. Because visible light cannot be absorbed by the i-NiO layer, visible response is suppressed in p-i-n HPDs.

Facile Synthesis of Highly Conductive Vanadium-Doped NiO Film for Transparent Conductive Oxide

Metal-oxide-based electrodes play a crucial role in various transparent conductive oxide (TCO) applications. Among the p-type materials, nickel oxide is a promising electrically conductive material due to its good stability, large bandgap, and deep valence band. Here, we display pristine and 3 at.%V-doped NiO synthesized by the solvothermal decomposition method. The properties of both the pristine and 3 at.%V:NiO nanoparticles were characterized by field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), X-ray diffractometry (XRD), Raman spectroscopy, ultraviolet–visible spectroscopy (UV–vis), and X-ray photoelectron spectroscopy (XPS). The film properties were characterized by atomic force microscopy (AFM) and a source meter. Our results suggest that incorporation of vanadium into the NiO lattice significantly improves both electrical conductivity and hole extraction. Also, 3 at.%V:NiO exhibits a lower crystalline size when compared to pristine nickel oxide, which maintains the reduction of surface roughness. These results indicate that vanadium is an excellent dopant for NiO.

Progress, highlights and perspectives on NiO in perovskite photovoltaics

The power conversion efficiency (PCE) of NiO based perovskite solar cells has recently hit a record 22.1% with a hybrid organic-inorganic perovskite composition and a PCE above 15% in a fully inorganic configuration was achieved. Moreover, NiO processing is a mature technology, with different industrially attractive processes demonstrated in the last few years. These considerations, along with the excellent stabilities reported, clearly point towards NiO as the most efficient inorganic hole selective layer for lead halide perovskite photovoltaics, which is the topic of this review. NiO optoelectronics is discussed by analysing the different doping mechanisms, with a focus on the case of alkaline and transition metal cation dopants. Doping allows tuning the conductivity and the energy levels of NiO, improving the overall performance and adapting the material to a variety of perovskite compositions. Furthermore, we summarise the main investigations on the NiO/perovskite interface stability. In fact, the surface of NiO is commonly oxidised and reactive with perovskite, also under the effect of light, thermal and electrical stress. Interface engineering strategies should be considered aiming at long term stability and the highest efficiency. Finally, we present the main achievements in flexible, fully printed and lead-free perovskite photovoltaics which employ NiO as a layer and provide our perspective to accelerate the improvement of these technologies. Overall, we show that adequately doped and passivated NiO might be an ideal hole selective layer in every possible application of perovskite solar cells.

Boosting the Conversion Efficiency Over 20% in MAPbI3 Perovskite Planar Solar Cells by Employing a Solution-Processed Aluminum-Doped Nickel Oxide Hole Collector

Recently, nickel oxide (NiO_x) thin films have been used as an efficient and robust hole transport layer (HTL) in inverted planar perovskite solar cells (IP-PSCs) to replace costly and unstable organic transport materials. However, the power conversion efficiency (PCE) of most IP-PSCs using NiO_x HTLs is rather limited below 20% due to insufficient electronic conductivity of the NiO_x. In this work, solution-processed Al-doped NiO_x (ANO) films are suggested as HTLs for low-cost and stable IP-PSCs. The electrical conductivity of the NiO_x film is significantly enhanced by Al doping, which effectively reduces the nonradiative recombination losses at the HTL-perovskite interfaces and boosts hole extraction/transportation. The device with undoped NiO_x shows the best PCE of 16.56%, whereas ANO HTL (5% doping) contributes to achieving a PCE of 20.84%, which outperforms other CH₃NH₃PbI₃ IP-PSCs with NiO_x-based HTLs reported to date. Moreover, a reliability test (1728 h storage) shows that the performance stability is enhanced by approximately 11% by employing ANO HTLs. This investigation into ANO HTLs provides a new guideline for the further development of highly efficient and reliable IP-PSCs using low-cost and robust metal oxide HTLs.

The Performance Improvement of Using Hole Transport Layer with Lithium and Cobalt for Inverted Planar Perovskite Solar Cell

With the continuous development of solar cells, the perovskite solar cells (PSCs), whose hole transport layer plays a vital part in collection of photogenerated carriers, have been studied by many researchers. Interface transport layers are important for efficiency and stability enhancement. In this paper, we demonstrated that lithium (Li) and cobalt (Co) codoped in the novel inorganic hole transport layer named NiOx, which were deposited onto ITO substrates via solution methods at room temperature, can greatly enhance performance based on inverted structures of planar heterojunction PSCs. Compared to the pristine NiOx films, doping a certain amount of Li and Co can increase optical transparency, work function, electrical conductivity and hole mobility of NiOx film. Furthermore, experimental results certified that coating CH3NH3PbIxCl3−x perovskite films on Li and Co- NiOx electrode interlayer film can improve chemical stability and absorbing ability of sunlight than the pristine NiOx. Consequently, the power conversion efficiency (PCE) of PSCs has a great improvement from 14.1% to 18.7% when codoped with 10% Li and 5% Co in NiOx. Moreover, the short-circuit current density (Jsc) was increased from 20.09 mA/cm2 to 21.7 mA/cm2 and the fill factor (FF) was enhanced from 0.70 to 0.75 for the PSCs. The experiment results demonstrated that the Li and Co codoped NiOx can be a effective dopant to improve the performance of the PSCs.

Modification of NiO x hole transport layer for acceleration of charge extraction in inverted perovskite solar cells

The modification of the inorganic hole transport layer has been an efficient method for optimizing the performance of inverted perovskite solar cells. In this work, we propose a facile modification of a compact NiO x film with NiO x nanoparticles and explore the effects on the charge carrier dynamic behaviors and photovoltaic performance of inverted perovskite devices. The modification of the NiO x hole transport layer can not only enlarge the surface area and infiltration ability, but also adjust the valence band maximum to well match that of perovskite. The photoluminescence results confirm the acceleration of the charge separation and transport at the NiO x /perovskite interface. The corresponding device possesses better photovoltaic parameters than the device based on control NiO x films. Moreover, the charge carrier transport/recombination dynamics are further systematically investigated by the measurements of time-resolved photoluminescence, transient photovoltage and transient photocurrent. Consequently, the results demonstrate that proper modification of NiO x can significantly enlarge interface area and improve the hole extraction capacity, thus efficiently promoting charge separation and inhibiting charge recombination, which leads to the enhancement of the device performances.

Coordinated Optical Matching of a Texture Interface Made from Demixing Blended Polymers for High-Performance Inverted Perovskite Solar Cells

The continuing increase of the efficiency of perovskite solar cells has pushed the internal quantum efficiency approaching 100%, which means the light-to-carrier and then the following carrier transportation and extraction are no longer limiting factors in photoelectric conversion efficiency of perovskite solar cells. However, the optimal efficiency is still far lower than the Shockley-Queisser efficiency limit, especially for those inverted perovskite solar cells, indicating that a significant fraction of light does not transmit into the active perovskite layer to be absorbed there. Here, a planar inverted perovskite solar cell (ITO/PTAA/perovskite/PC₆₁BM/bathocuproine (BCP)/Ag) is chosen as an example, and we show that its external quantum efficiency (EQE) can be significantly improved by simply texturing the poly[bis (4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) layer. By washing the film prepared from a mixed polymer solution of PTAA and polystyrene (PS), a textured PTAA/perovskite interface is introduced on the light-input side of perovskite to inhibit internal optical reflection. The reduction of optical loss by this simple texture method increases the EQE and then the photocurrent of the ITO/PTAA/perovskite/PC₆₁BM/BCP/Ag device with the magnitude of about 10%. At the same time, this textured PTAA benefits the band edge absorption in this planar solar cell. The large increase of the short-circuit current together with the increase of fill factor pushes the efficiency of this inverted perovskite solar cell from 18.3% up to an efficiency over 20.8%. By using an antireflection coating on glass to let more light into the device, the efficiency is further improved to 21.6%, further demonstrating the importance of light management in perovskite solar cells.

Self-doping synthesis of trivalent Ni2O3 as a hole transport layer for high fill factor and efficient inverted perovskite solar cells

We present a novel self-doping method to obtain trivalent nickel oxide (Ni₂O₃) as an HTL, and its excellent optical transmittance and hole extraction efficiencies lead to a PCE of 17.89% and high FF of 82.66%.

Enhanced Open-Circuit Voltage in Perovskite Solar Cells with Open-Cage [60]Fullerene Derivatives as Electron-Transporting Materials

The synthesis, characterization, and incorporation of open-cage [60]fullerene derivatives as electron-transporting materials (ETMs) in perovskite solar cells (PSCs) with an inverted planar (p-i-n) structure is reported. Following optical and electrochemical characterization of the open-cage fullerenes 2a–c, p-i-n PSCs with a indium tin oxide (ITO)/poly(3,4-ethylenedioxythiophene)-polystyrene sulfonate (PEDOT:PSS)/perovskite/fullerene/Ag structure were prepared. The devices obtained from 2a–b exhibit competitive power conversion efficiencies (PCEs) and improved open-circuit voltage (V_oc) values (>1.0 V) in comparison to a reference cell based on phenyl-C₆₁-butyric-acid methyl-ester (PC₆₁BM). These results are rationalized in terms of a) the higher passivation ability of the open-cage fullerenes with respect to the other fullerenes, and b) a good overlap between the highest occupied molecular orbital/lowest unoccupied molecular orbital (HOMO/LUMO) levels of 2a–b and the conduction band of the perovskite.