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Xiao K, Zhang S, Zhang K, Zhang L, Wen Y, Tian S, Xiao Y, Shi C, Hou S, Liu C, Han L, He J, Tang W, Li G, Wang L, Chen X. Room-Temperature Band-Aligned Infrared Heterostructures for Integrable Sensing and Communication. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2401716. [PMID: 38840455 DOI: 10.1002/advs.202401716] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/18/2024] [Revised: 04/07/2024] [Indexed: 06/07/2024]
Abstract
The demand for miniaturized and integrated multifunctional devices drives the progression of high-performance infrared photodetectors for diverse applications, including remote sensing, air defense, and communications, among others. Nonetheless, infrared photodetectors that rely solely on single low-dimensional materials often face challenges due to the limited absorption cross-section and suboptimal carrier mobility, which can impair sensitivity and prolong response times. Here, through experimental validation is demonstrated, precise control over energy band alignment in a type-II van der Waals heterojunction, comprising vertically stacked 2D Ta2NiSe5 and the topological insulator Bi2Se3, where the configuration enables polarization-sensitive, wide-spectral-range photodetection. Experimental evaluations at room temperature reveal that the device exhibits a self-powered responsivity of 0.48 A·W-1, a specific directivity of 3.8 × 1011 cm·Hz1/2·W-1, a response time of 151 µs, and a polarization ratio of 2.83. The stable and rapid photoresponse of the device underpins the utility in infrared-coded communication and dual-channel imaging, showing the substantial potential of the detector. These findings articulate a systematic approach to developing miniaturized, multifunctional room-temperature infrared detectors with superior performance metrics and enhanced capabilities for multi-information acquisition.
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Affiliation(s)
- Kening Xiao
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, 200083, China
| | - Shi Zhang
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, 200083, China
| | - Kaixuan Zhang
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, 200083, China
| | - Libo Zhang
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, 200083, China
| | - Yuanfeng Wen
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
| | - Shijian Tian
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, 200083, China
| | - Yunlong Xiao
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
| | - Chaofan Shi
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
| | - Shicong Hou
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Changlong Liu
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
| | - Li Han
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, 200083, China
| | - Jiale He
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, 200083, China
| | - Weiwei Tang
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
| | - Guanhai Li
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, 200083, China
| | - Lin Wang
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, 200083, China
- University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China
| | - Xiaoshuang Chen
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, 200083, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
- University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China
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Lu C, Luo M, Dong W, Ge Y, Han T, Liu Y, Xue X, Ma N, Huang Y, Zhou Y, Xu X. Bi 2 Te 3 /Bi 2 Se 3 /Bi 2 S 3 Cascade Heterostructure for Fast-Response and High-Photoresponsivity Photodetector and High-Efficiency Water Splitting with a Small Bias Voltage. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2205460. [PMID: 36574467 PMCID: PMC9951346 DOI: 10.1002/advs.202205460] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/21/2022] [Revised: 12/08/2022] [Indexed: 05/14/2023]
Abstract
Large-scale multi-heterostructure and optimal band alignment are significantly challenging but vital for photoelectrochemical (PEC)-type photodetector and water splitting. Herein, the centimeter-scale bismuth chalcogenides-based cascade heterostructure is successfully synthesized by a sequential vapor phase deposition method. The multi-staggered band alignment of Bi2 Te3 /Bi2 Se3 /Bi2 S3 is optimized and verified by X-ray photoelectron spectroscopy. The PEC photodetectors based on these cascade heterostructures demonstrate the highest photoresponsivity (103 mA W-1 at -0.1 V and 3.5 mAW-1 at 0 V under 475 nm light excitation) among the previous reports based on two-dimensional materials and related heterostructures. Furthermore, the photodetectors display a fast response (≈8 ms), a high detectivity (8.96 × 109 Jones), a high external quantum efficiency (26.17%), and a high incident photon-to-current efficiency (27.04%) at 475 nm. Due to the rapid charge transport and efficient light absorption, the Bi2 Te3 /Bi2 Se3 /Bi2 S3 cascade heterostructure demonstrates a highly efficient hydrogen production rate (≈0.416 mmol cm-2 h-1 and ≈14.320 µmol cm-2 h-1 with or without sacrificial agent, respectively), which is far superior to those of pure bismuth chalcogenides and its type-II heterostructures. The large-scale cascade heterostructure offers an innovative method to improve the performance of optoelectronic devices in the future.
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Affiliation(s)
- Chunhui Lu
- Shaanxi Joint Lab of GrapheneState Key Laboratory of Photon‐Technology in Western China EnergyInternational Collaborative Center on Photoelectric Technology and Nano Functional MaterialsInstitute of Photonics & Photon‐TechnologySchool of PhysicsNorthwest UniversityXi'an710069China
| | - Mingwei Luo
- Shaanxi Joint Lab of GrapheneState Key Laboratory of Photon‐Technology in Western China EnergyInternational Collaborative Center on Photoelectric Technology and Nano Functional MaterialsInstitute of Photonics & Photon‐TechnologySchool of PhysicsNorthwest UniversityXi'an710069China
| | - Wen Dong
- Shaanxi Joint Lab of GrapheneState Key Laboratory of Photon‐Technology in Western China EnergyInternational Collaborative Center on Photoelectric Technology and Nano Functional MaterialsInstitute of Photonics & Photon‐TechnologySchool of PhysicsNorthwest UniversityXi'an710069China
| | - Yanqing Ge
- Shaanxi Joint Lab of GrapheneState Key Laboratory of Photon‐Technology in Western China EnergyInternational Collaborative Center on Photoelectric Technology and Nano Functional MaterialsInstitute of Photonics & Photon‐TechnologySchool of PhysicsNorthwest UniversityXi'an710069China
| | - Taotao Han
- Shaanxi Joint Lab of GrapheneState Key Laboratory of Photon‐Technology in Western China EnergyInternational Collaborative Center on Photoelectric Technology and Nano Functional MaterialsInstitute of Photonics & Photon‐TechnologySchool of PhysicsNorthwest UniversityXi'an710069China
| | - Yuqi Liu
- Shaanxi Joint Lab of GrapheneState Key Laboratory of Photon‐Technology in Western China EnergyInternational Collaborative Center on Photoelectric Technology and Nano Functional MaterialsInstitute of Photonics & Photon‐TechnologySchool of PhysicsNorthwest UniversityXi'an710069China
| | - Xinyi Xue
- Shaanxi Joint Lab of GrapheneState Key Laboratory of Photon‐Technology in Western China EnergyInternational Collaborative Center on Photoelectric Technology and Nano Functional MaterialsInstitute of Photonics & Photon‐TechnologySchool of PhysicsNorthwest UniversityXi'an710069China
| | - Nan Ma
- Shaanxi Joint Lab of GrapheneState Key Laboratory of Photon‐Technology in Western China EnergyInternational Collaborative Center on Photoelectric Technology and Nano Functional MaterialsInstitute of Photonics & Photon‐TechnologySchool of PhysicsNorthwest UniversityXi'an710069China
| | - Yuanyuan Huang
- Shaanxi Joint Lab of GrapheneState Key Laboratory of Photon‐Technology in Western China EnergyInternational Collaborative Center on Photoelectric Technology and Nano Functional MaterialsInstitute of Photonics & Photon‐TechnologySchool of PhysicsNorthwest UniversityXi'an710069China
| | - Yixuan Zhou
- Shaanxi Joint Lab of GrapheneState Key Laboratory of Photon‐Technology in Western China EnergyInternational Collaborative Center on Photoelectric Technology and Nano Functional MaterialsInstitute of Photonics & Photon‐TechnologySchool of PhysicsNorthwest UniversityXi'an710069China
| | - Xinlong Xu
- Shaanxi Joint Lab of GrapheneState Key Laboratory of Photon‐Technology in Western China EnergyInternational Collaborative Center on Photoelectric Technology and Nano Functional MaterialsInstitute of Photonics & Photon‐TechnologySchool of PhysicsNorthwest UniversityXi'an710069China
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3
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Hennighausen Z, Hudak BM, Phillips M, Moon J, McCreary KM, Chuang HJ, Rosenberger MR, Jonker BT, Li CH, Stroud RM, van 't Erve OMJ. Room-Temperature Oxygen Transport in Nanothin Bi xO ySe z Enables Precision Modulation of 2D Materials. ACS NANO 2022; 16:13969-13981. [PMID: 36074972 DOI: 10.1021/acsnano.2c03367] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Oxygen conductors and transporters are important to several consequential renewable energy technologies, including fuel cells and syngas production. Separately, monolayer transition-metal dichalcogenides (TMDs) have demonstrated significant promise for a range of applications, including quantum computing, advanced sensors, valleytronics, and next-generation optoelectronics. Here, we synthesize a few-nanometer-thick BixOySez compound that strongly resembles a rare R3m bismuth oxide (Bi2O3) phase and combine it with monolayer TMDs, which are highly sensitive to their environment. We use the resulting 2D heterostructure to study oxygen transport through BixOySez into the interlayer region, whereby the 2D material properties are modulated, finding extraordinarily fast diffusion near room temperature under laser exposure. The oxygen diffusion enables reversible and precise modification of the 2D material properties by controllably intercalating and deintercalating oxygen. Changes are spatially confined, enabling sub-micrometer features (e.g., pixels), and are long-term stable for more than 221 days. Our work suggests few-nanometer-thick BixOySez is a promising unexplored room-temperature oxygen transporter. Additionally, our findings suggest that the mechanism can be applied to other 2D materials as a generalized method to manipulate their properties with high precision and sub-micrometer spatial resolution.
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Affiliation(s)
- Zachariah Hennighausen
- NRC Postdoc Residing at the Materials Science and Technology Division, United States Naval Research Laboratory, Washington, DC 20375, United States
| | - Bethany M Hudak
- Materials Science and Technology Division, United States Naval Research Laboratory, Washington, DC 20375, United States
| | - Madeleine Phillips
- Materials Science and Technology Division, United States Naval Research Laboratory, Washington, DC 20375, United States
| | - Jisoo Moon
- NRC Postdoc Residing at the Materials Science and Technology Division, United States Naval Research Laboratory, Washington, DC 20375, United States
| | - Kathleen M McCreary
- Materials Science and Technology Division, United States Naval Research Laboratory, Washington, DC 20375, United States
| | - Hsun-Jen Chuang
- Materials Science and Technology Division, United States Naval Research Laboratory, Washington, DC 20375, United States
- Nova Research, Inc., Alexandria, Virginia 22308, United States
| | | | - Berend T Jonker
- Materials Science and Technology Division, United States Naval Research Laboratory, Washington, DC 20375, United States
| | - Connie H Li
- Materials Science and Technology Division, United States Naval Research Laboratory, Washington, DC 20375, United States
| | - Rhonda M Stroud
- Materials Science and Technology Division, United States Naval Research Laboratory, Washington, DC 20375, United States
| | - Olaf M J van 't Erve
- Materials Science and Technology Division, United States Naval Research Laboratory, Washington, DC 20375, United States
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4
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Kirubasankar B, Won YS, Adofo LA, Choi SH, Kim SM, Kim KK. Atomic and structural modifications of two-dimensional transition metal dichalcogenides for various advanced applications. Chem Sci 2022; 13:7707-7738. [PMID: 35865881 PMCID: PMC9258346 DOI: 10.1039/d2sc01398c] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/09/2022] [Accepted: 05/18/2022] [Indexed: 12/14/2022] Open
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) and their heterostructures have attracted significant interest in both academia and industry because of their unusual physical and chemical properties. They offer numerous applications, such as electronic, optoelectronic, and spintronic devices, in addition to energy storage and conversion. Atomic and structural modifications of van der Waals layered materials are required to achieve unique and versatile properties for advanced applications. This review presents a discussion on the atomic-scale and structural modifications of 2D TMDs and their heterostructures via post-treatment. Atomic-scale modifications such as vacancy generation, substitutional doping, functionalization and repair of 2D TMDs and structural modifications including phase transitions and construction of heterostructures are discussed. Such modifications on the physical and chemical properties of 2D TMDs enable the development of various advanced applications including electronic and optoelectronic devices, sensing, catalysis, nanogenerators, and memory and neuromorphic devices. Finally, the challenges and prospects of various post-treatment techniques and related future advanced applications are addressed.
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Affiliation(s)
- Balakrishnan Kirubasankar
- Department of Energy Science, Sungkyunkwan University Suwon 16419 South Korea .,Department of Chemistry, Sookmyung Women's University Seoul 14072 South Korea
| | - Yo Seob Won
- Department of Energy Science, Sungkyunkwan University Suwon 16419 South Korea .,Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University Suwon 16419 South Korea
| | - Laud Anim Adofo
- Department of Energy Science, Sungkyunkwan University Suwon 16419 South Korea .,Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University Suwon 16419 South Korea
| | - Soo Ho Choi
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University Suwon 16419 South Korea
| | - Soo Min Kim
- Department of Chemistry, Sookmyung Women's University Seoul 14072 South Korea
| | - Ki Kang Kim
- Department of Energy Science, Sungkyunkwan University Suwon 16419 South Korea .,Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University Suwon 16419 South Korea
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5
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Hennighausen Z, Wickramaratne D, McCreary KM, Hudak BM, Brintlinger T, Chuang HJ, Noyan MA, Jonker BT, Stroud RM, van 't Erve OM. Laser-Patterned Submicrometer Bi 2Se 3-WS 2 Pixels with Tunable Circular Polarization at Room Temperature. ACS APPLIED MATERIALS & INTERFACES 2022; 14:9504-9514. [PMID: 35157419 DOI: 10.1021/acsami.1c24205] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Characterizing and manipulating the circular polarization of light is central to numerous emerging technologies, including spintronics and quantum computing. Separately, monolayer tungsten disulfide (WS2) is a versatile material that has demonstrated promise in a variety of applications, including single photon emitters and valleytronics. Here, we demonstrate a method to tune the photoluminescence (PL) intensity (factor of ×161), peak position (38.4 meV range), circular polarization (39.4% range), and valley polarization of a Bi2Se3-WS2 2D heterostructure using a low-power laser (0.762 μW) in ambient conditions. Changes are spatially confined to the laser spot, enabling submicrometer (814 nm) features, and are long-term stable (>334 days). PL and valley polarization changes can be controllably reversed through laser exposure in a vacuum, allowing the material to be erased and reused. Atmospheric experiments and first-principles calculations indicate oxygen diffusion modulates the exciton radiative vs nonradiative recombination pathways, where oxygen absorption leads to brightening and desorption to darkening.
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Affiliation(s)
- Zachariah Hennighausen
- NRC Postdoc Residing at the Materials Science and Technology Division, United States Naval Research Laboratory, Washington, D.C. 20375, United States
| | - Darshana Wickramaratne
- Materials Science and Technology Division, United States Naval Research Laboratory, Washington, D.C. 20375, United States
| | - Kathleen M McCreary
- Materials Science and Technology Division, United States Naval Research Laboratory, Washington, D.C. 20375, United States
| | - Bethany M Hudak
- Materials Science and Technology Division, United States Naval Research Laboratory, Washington, D.C. 20375, United States
| | - Todd Brintlinger
- Materials Science and Technology Division, United States Naval Research Laboratory, Washington, D.C. 20375, United States
| | - Hsun-Jen Chuang
- Nova Research, Inc., Alexandria, Virginia 22308, United States
| | - Mehmet A Noyan
- Materials Science and Technology Division, United States Naval Research Laboratory, Washington, D.C. 20375, United States
| | - Berend T Jonker
- Materials Science and Technology Division, United States Naval Research Laboratory, Washington, D.C. 20375, United States
| | - Rhonda M Stroud
- Materials Science and Technology Division, United States Naval Research Laboratory, Washington, D.C. 20375, United States
| | - Olaf M van 't Erve
- Materials Science and Technology Division, United States Naval Research Laboratory, Washington, D.C. 20375, United States
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6
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Swain G, Sultana S, Parida K. A review on vertical and lateral heterostructures of semiconducting 2D-MoS 2 with other 2D materials: a feasible perspective for energy conversion. NANOSCALE 2021; 13:9908-9944. [PMID: 34038496 DOI: 10.1039/d1nr00931a] [Citation(s) in RCA: 21] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Fossil fuels as a double-edged sword are essential to daily life. However, the depletion of fossil fuel reservoirs has increased the search for alternative renewable energy sources to procure a more sustainable society. Accordingly, energy production through water splitting, CO2 reduction and N2 reduction via photocatalytic and electrocatalytic pathways is being contemplated as a greener methodology with zero environmental pollution. Owing to their atomic-level thickness, two-dimensional (2D) semiconductor catalysts have triggered the reawakening of interest in the field of energy and environmental applications. Among them, following the unconventional properties of graphene, 2D MoS2 has been widely investigated due to its outstanding optical and electronic properties. However, the photo/electrocatalytic performance of 2D-MoS2 is still unsatisfactory due to its low charge carrier density. Recently, the development of 2D/2D heterojunctions has evoked interdisciplinary research fascination in the scientific community, which can mitigate the shortcomings associated with 2D-MoS2. Following the recent research trends, the present review covers the recent findings and key aspects on the synthetic methods, fundamental properties and practical applications of semiconducting 2D-MoS2 and its heterostructures with other 2D materials such as g-C3N4, graphene, CdS, TiO2, MXene, black phosphorous, and boron nitride. Besides, this review details the viable application of these materials in the area of hydrogen energy production via the H2O splitting reaction, N2 fixation to NH3 formation and CO2 reduction to different value-added hydrocarbons and alcohol products through both photocatalysis and electrocatalysis. The crucial role of the interface together with the charge separation principle between two individual 2D structures towards achieving satisfactory activity for various applications is presented. Overall, the current studies provide a snapshot of the recent breakthroughs in the development of various 2D/2D-based catalysts in the field of energy production, delivering opportunities for future research.
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Affiliation(s)
- Gayatri Swain
- Centre for Nanoscience and Nanotechnology, Siksha 'O' Anusandhan (Deemed to be University), Jagamohan Nagar, Jagamara, Bhubaneswar-751030, Odisha, India.
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7
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Kahn E, Lucking M, Zhang F, Lei Y, Granzier-Nakajima T, Grasseschi D, Beach K, Murray W, Yeh YT, Elias AL, Liu Z, Terrones H, Terrones M. Selective Synthesis of Bi 2Te 3/WS 2 Heterostructures with Strong Interlayer Coupling. ACS APPLIED MATERIALS & INTERFACES 2020:acsami.0c03656. [PMID: 32493008 DOI: 10.1021/acsami.0c03656] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The vertical integration of atomically thin-layered materials to create van der Waals heterostructures (vdWHs) has been proposed as a method to design nanostructures with emergent properties. In this work, epitaxial Bi2Te3/WS2 vdWHs are synthesized via a two-step vapor deposition process. It is calculated that the vdWH has an indirect band gap with a valence band edge that bridges the vdW gap, resulting in a quenched photoluminescence (PL) from the WS2 monolayer, reduced intensity of its resonance Raman vibrational peaks, improved vertical charge transport, and a decrease in the intensity of second harmonic generation (SHG). Furthermore, it is observed that induced defects strongly influence the nucleation and growth of vdWHs. By creating point defects in WS2 monolayers, it is shown that the growth of Bi2Te3 platelets can be patterned. This work offers important insights into the synthesis, defect engineering, and moiré engineering of an emerging class of two-dimensional (2D) heterostructures.
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Affiliation(s)
| | - Michael Lucking
- Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | | | | | | | - Daniel Grasseschi
- Surface Chemistry & Nanomaterials Laboratory, Department of Inorganic Chemistry, Chemistry Institute, Federal University of Rio de Janeiro (UFRJ), 21941-909 Rio de Janeiro, Brazil
| | - Kory Beach
- Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | | | | | | | | | - Humberto Terrones
- Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
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8
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Hejazi D, Liu S, Farnoosh A, Ostadabbas S, Kar S. Development of use-specific high-performance cyber-nanomaterial optical detectors by effective choice of machine learning algorithms. MACHINE LEARNING: SCIENCE AND TECHNOLOGY 2020. [DOI: 10.1088/2632-2153/ab8967] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022] Open
Abstract
Abstract
Due to their inherent variabilities, nanomaterials-based sensors are challenging to translate into real-world applications, where reliability and reproducibility are key. Machine learning can be a powerful approach for obtaining reliable inferences from data generated by such sensors. Here, we show that the best choice of ML algorithm in a cyber-nanomaterial detector is largely determined by the specific use-considerations, including accuracy, computational cost, speed, and resilience against drifts and long-term ageing effects. When sufficient data and computing resources are provided, the highest sensing accuracy can be achieved by the k-nearest neighbors (kNNs) and Bayesian inference algorithms, however, these algorithms can be computationally expensive for real-time applications. In contrast, artificial neural networks (ANNs) are computationally expensive to train (off-line), but they provide the fastest result under testing conditions (on-line) while remaining reasonably accurate. When access to data is limited, support vector machines (SVMs) can perform well even with small training sample sizes, while other algorithms show considerable reduction in accuracy if data is scarce, hence, setting a lower limit on the size of required training data. We also show by tracking and modeling the long-term drifts of the detector performance over a one year time-frame, it is possible to dramatically improve the predictive accuracy without any re-calibration. Our research shows for the first time that if the ML algorithm is chosen specific to the use-case, low-cost solution-processed cyber-nanomaterial detectors can be practically implemented under diverse operational requirements, despite their inherent variabilities.
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9
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Strange LE, Yadav J, Garg S, Shinde PS, Hill JW, Hill CM, Kung P, Pan S. Investigating the Redox Properties of Two-Dimensional MoS 2 Using Photoluminescence Spectroelectrochemistry and Scanning Electrochemical Cell Microscopy. J Phys Chem Lett 2020; 11:3488-3494. [PMID: 32286830 DOI: 10.1021/acs.jpclett.0c00769] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Control over photophysical and chemical properties of two-dimensional (2D) transition metal dichalcogenides (TMDs) is the key to advance their applications in next-generation optoelectronics. Although chemical doping and surface modification with plasmonic metals have been reported to tune the photophysical and catalytic properties of 2D TMDs, there have been few reports of tuning optical properties using dynamic electrochemical control of electrode potential. Herein, we report (1) the photoluminescence (PL) enhancement and red-shift in the PL spectrum of 2D MoS2, synthesized by chemical vapor deposition and subsequent transfer onto an indium tin oxide electrode, upon electrochemical anodization and (2) spatial heterogeneities in its photoelectrochemical (PEC) activities. Spectroelectrochemistry shows that positive electrochemical bias causes an initial ten-fold increase in the PL intensity followed by a quick decrease in the enhancement. The PL enhancement and spectrum red-shift are associated with the decrease in nonradiative decay rates of excitons formed upon electrochemical anodization of 2D MoS2. Additionally, scanning electrochemical cell microscopy (SECCM) study shows that the 2D MoS2 crystal is spatially sensitive to PEC oxidation at positive potentials. SECCM also shows a photocurrent increase caused by spatially heterogeneous edge-type defect sites of the crystal.
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Affiliation(s)
| | | | | | | | - Joshua W Hill
- Department of Chemistry, University of Wyoming, Laramie, Wyoming 82071, United States
| | - Caleb M Hill
- Department of Chemistry, University of Wyoming, Laramie, Wyoming 82071, United States
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10
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Hennighausen Z, Lane C, Buda IG, Mathur VK, Bansil A, Kar S. Evidence of a purely electronic two-dimensional lattice at the interface of TMD/Bi 2Se 3 heterostructures. NANOSCALE 2019; 11:15929-15938. [PMID: 31414108 DOI: 10.1039/c9nr04412d] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
When 2D materials are vertically stacked, new physics emerges from interlayer orbital interactions and charge transfer modulated by the additional periodicity of interlayer atomic registry (moiré superlattice). Surprisingly, relatively little is known regarding the real-space distribution of the transferred charges within this framework. Here we provide the first experimental indications of a real-space, non-atomic lattice formed by interlayer coupling induced charge redistribution in vertically stacked Bi2Se3/transition metal dichalcogenide (TMD) 2D heterostructures. Robust enough to scatter 200 keV electron beams, this non-atomic lattice generates selected area diffraction patterns that correspond excellently with simulated patterns from moiré superlattices of the parent crystals suggesting their location at sites of high interlayer atomic registry. Density functional theory (DFT) predicts concentrated charge pools reside in the interlayer region, located at sites of high nearest-neighbor atomic registry, suggesting the non-atomic lattices are standalone, reside in the interlayer region, and are purely electronic.
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