1
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Wu W, Feng K, Wang Y, Wang J, Huang E, Li Y, Jeong SY, Woo HY, Yang K, Guo X. Selenophene Substitution Enabled High-Performance n-Type Polymeric Mixed Ionic-Electronic Conductors for Organic Electrochemical Transistors and Glucose Sensors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2310503. [PMID: 37961011 DOI: 10.1002/adma.202310503] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/10/2023] [Revised: 11/06/2023] [Indexed: 11/15/2023]
Abstract
High-performance n-type polymeric mixed ionic-electronic conductors (PMIECs) are essential for realizing organic electrochemical transistors (OECTs)-based low-power complementary circuits and biosensors, but their development still remains a great challenge. Herein, by devising two novel n-type polymers (f-BTI2g-SVSCN and f-BSeI2g-SVSCN) containing varying selenophene contents together with their thiophene-based counterpart as the control, it is demonstrated that gradually increasing selenophene loading in polymer backbones can simultaneously yield lowered lowest unoccupied molecular orbital levels, boosted charge-transport properties, and improved ion-uptake capabilities. Therefore, a remarkable volumetric capacitance (C*) of 387.2 F cm-3 and a state-of-the-art OECT electron mobility (µe,OECT ) of 0.48 cm2 V-1 s-1 are synchronously achieved for f-BSeI2g-SVSCN having the highest selenophene content, yielding an unprecedented geometry-normalized transconductance (gm,norm ) of 71.4 S cm-1 and record figure of merit (µC*) value of 191.2 F cm-1 V-1 s-1 for n-type OECTs. Thanks to such excellent performance of f-BSeI2g-SVSCN-based OECTs, a glucose sensor with a remarkably low detection limit of 10 nMm and decent selectivity is further implemented, demonstrating the power of selenophene substitution strategy in enabling high-performance n-type PMIECs for biosensing applications.
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Affiliation(s)
- Wenchang Wu
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
| | - Kui Feng
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
| | - Yimei Wang
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
| | - Junwei Wang
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
| | - Enmin Huang
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
| | - Yongchun Li
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
| | - Sang Young Jeong
- Department of Chemistry, Korea University, Anamro 145, Seoul, 02841, Republic of Korea
| | - Han Young Woo
- Department of Chemistry, Korea University, Anamro 145, Seoul, 02841, Republic of Korea
| | - Kun Yang
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
- College of Chemistry and Chemical Engineering, Hunan University, Changsha, Hunan, 410080, China
| | - Xugang Guo
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
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2
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Feng K, Wang J, Jeong SY, Yang W, Li J, Woo HY, Guo X. High-Performance n-Type Organic Thermoelectrics Enabled by Synergistically Achieving High Electron Mobility and Doping Efficiency. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2302629. [PMID: 37553779 PMCID: PMC10582446 DOI: 10.1002/advs.202302629] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/25/2023] [Revised: 07/03/2023] [Indexed: 08/10/2023]
Abstract
n-Doped polymers with high electrical conductivity (σ) are still very scarce in organic thermoelectrics (OTEs), which limits the development of efficient organic thermoelectric generators. A series of fused bithiophene imide dimer-based polymers, PO8, PO12, and PO16, incorporating distinct oligo(ethylene glycol) side-chain to optimize σ is reported here. Three polymers show a monotonic electron mobility decrease as side-chain size increasing due to the gradually lowered film crystallinity and change of backbone orientation. Interestingly, polymer PO12 with a moderate side-chain size delivers a champion σ up to 92.0 S cm-1 and a power factor (PF) as high as 94.3 µW m-1 K-2 in the series when applied in OTE devices. The PF value is among the highest ones for the solution-processing n-doped polymers. In-depth morphology studies unravel that the moderate crystallinity and the formation of 3D conduction channel derived from bimodal orientation synergistically contribute to high doping efficiency and large charge carrier mobility, thus resulting in high performance for the PO12-based OTEs. The results demonstrate the great power of simple tuning of side chain in developing n-type polymers with substantial σ for improving organic thermoelectric performance.
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Affiliation(s)
- Kui Feng
- Department of Materials Science and EngineeringSouthern University of Science and TechnologyShenzhenGuangdong518055China
- Academy for Advanced Interdisciplinary StudiesSouthern University of Science and TechnologyShenzhenGuangdong518055China
| | - Junwei Wang
- Department of Materials Science and EngineeringSouthern University of Science and TechnologyShenzhenGuangdong518055China
| | - Sang Young Jeong
- Department of ChemistryKorea UniversityAnamro 145Seoul02841Republic of Korea
| | - Wanli Yang
- Department of Materials Science and EngineeringSouthern University of Science and TechnologyShenzhenGuangdong518055China
| | - Jianfeng Li
- Department of Materials Science and EngineeringSouthern University of Science and TechnologyShenzhenGuangdong518055China
| | - Han Young Woo
- Department of ChemistryKorea UniversityAnamro 145Seoul02841Republic of Korea
| | - Xugang Guo
- Department of Materials Science and EngineeringSouthern University of Science and TechnologyShenzhenGuangdong518055China
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3
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Frisch S, Neiß C, Lindenthal S, Zorn NF, Rominger F, Görling A, Zaumseil J, Kivala M. Tetra(peri-naphthylene)anthracene: A Near-IR Fluorophore with Four-Stage Amphoteric Redox Properties. Chemistry 2023; 29:e202203101. [PMID: 36287191 PMCID: PMC10107686 DOI: 10.1002/chem.202203101] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/05/2022] [Indexed: 11/06/2022]
Abstract
A novel, benign synthetic strategy towards soluble tetra(peri-naphthylene)anthracene (TPNA) decorated with triisopropylsilylethynyl substituents has been established. The compound is perfectly stable under ambient conditions in air and features intense and strongly bathochromically shifted UV/vis absorption and emission bands reaching to near-IR region beyond 900 nm. Cyclic voltammetry measurements revealed four facilitated reversible redox events comprising two oxidations and two reductions. These remarkable experimental findings were corroborated by theoretical studies to identify the TPNA platform a particularly useful candidate for the development of functional near-IR fluorophores upon appropriate functionalization.
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Affiliation(s)
- Sabine Frisch
- Organisch-Chemisches Institut, Universität Heidelberg, Im Neuenheimer Feld 270, 69120, Heidelberg, Germany.,Centre for Advanced Materials, Universität Heidelberg, Im Neuenheimer Feld 225, 69120, Heidelberg, Germany
| | - Christian Neiß
- Lehrstuhl für Theoretische Chemie, Department Chemie und Pharmazie, Universität Erlangen-Nürnberg, Egerlandstr. 3, 91058, Erlangen, Germany
| | - Sebastian Lindenthal
- Physikalisch-Chemisches Institut, Universität Heidelberg, Im Neuenheimer Feld 253, 69120, Heidelberg, Germany
| | - Nicolas F Zorn
- Physikalisch-Chemisches Institut, Universität Heidelberg, Im Neuenheimer Feld 253, 69120, Heidelberg, Germany
| | - Frank Rominger
- Organisch-Chemisches Institut, Universität Heidelberg, Im Neuenheimer Feld 270, 69120, Heidelberg, Germany
| | - Andreas Görling
- Lehrstuhl für Theoretische Chemie, Department Chemie und Pharmazie, Universität Erlangen-Nürnberg, Egerlandstr. 3, 91058, Erlangen, Germany
| | - Jana Zaumseil
- Physikalisch-Chemisches Institut, Universität Heidelberg, Im Neuenheimer Feld 253, 69120, Heidelberg, Germany
| | - Milan Kivala
- Organisch-Chemisches Institut, Universität Heidelberg, Im Neuenheimer Feld 270, 69120, Heidelberg, Germany.,Centre for Advanced Materials, Universität Heidelberg, Im Neuenheimer Feld 225, 69120, Heidelberg, Germany
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4
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Ma S, Wang J, Feng K, Zhang H, Wu Z, Wang Y, Liu B, Li Y, An M, Gonzalez-Nuñez R, Ponce Ortiz R, Woo HY, Guo X. n-Type Polymer Semiconductors Based on Dithienylpyrazinediimide. ACS APPLIED MATERIALS & INTERFACES 2023; 15:1639-1651. [PMID: 36571844 DOI: 10.1021/acsami.2c17969] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
The development of n-type organic semiconductors critically relies on the design and synthesis of highly electron-deficient building blocks with good solubility and small steric hindrance. We report here a strongly electron-deficient dithienylpyrazinediimide (TPDI) and its n-type semiconducting polymers. The pyrazine substitution leads to the resulting polymers with much lower-lying lowest unoccupied molecular orbital (LUMO) levels and improved backbone planarity compared to the reported dithienylbenzodiimide (TBDI)- and fluorinated dithienylbenzodiimide (TFBDI)-based polymer analogues, thus yielding n-type transport character with an electron mobility up to 0.44 cm2 V-1 s-1 in organic thin-film transistors. These results demonstrate that dithienylpyrazinediimide is a highly promising electron-deficient building block for constructing high-performance n-type polymers and the incorporation of pyrazine into imide-functionalized (hetero)arenes is an effective strategy to develop n-type polymers with deep-lying frontier molecular orbital (FMO) levels for organic optoelectronic devices.
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Affiliation(s)
- Suxiang Ma
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, Guangdong, China
| | - Junwei Wang
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, Guangdong, China
| | - Kui Feng
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, Guangdong, China
- Academy for Advanced Interdisciplinary Studies, Southern University of Science and Technology (SUSTech), Shenzhen 518055, Guangdong, China
| | - Hao Zhang
- Department of Chemistry, Southern University of Science and Technology (SUSTech), Shenzhen 518055, Guangdong, China
| | - Ziang Wu
- Department of Chemistry, Korea University, Seoul 136-713, South Korea
| | - Yimei Wang
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, Guangdong, China
| | - Bin Liu
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, Guangdong, China
| | - Yongchun Li
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, Guangdong, China
| | - Mingwei An
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, Guangdong, China
| | - Raúl Gonzalez-Nuñez
- Department of Physical Chemistry, Faculty of Sciences, University of Málaga, Málaga 29071, Spain
| | - Rocío Ponce Ortiz
- Department of Physical Chemistry, Faculty of Sciences, University of Málaga, Málaga 29071, Spain
| | - Han Young Woo
- Department of Chemistry, Korea University, Seoul 136-713, South Korea
| | - Xugang Guo
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, Guangdong, China
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5
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Wang X, Liu S, Ren C, Cao L, Zhang W, Wu T. Synthesis, Characterization, and Field-Effect Transistor Properties of Naphthalene Diimide-Based Conjugated Polymers with Fluorine-Containing Branched Side Chains. Macromolecules 2022. [DOI: 10.1021/acs.macromol.2c01164] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Xuran Wang
- Laboratory of Optoelectronic and Information Marking Materials, Key Laboratory of Printing & Packaging Material and Technology, Beijing Institute of Graphic Communication, Beijing 102600, P. R. China
| | - Shengzhen Liu
- Laboratory of Optoelectronic and Information Marking Materials, Key Laboratory of Printing & Packaging Material and Technology, Beijing Institute of Graphic Communication, Beijing 102600, P. R. China
| | - Chunxing Ren
- Laboratory of Optoelectronic and Information Marking Materials, Key Laboratory of Printing & Packaging Material and Technology, Beijing Institute of Graphic Communication, Beijing 102600, P. R. China
| | - Long Cao
- Laboratory of Optoelectronic and Information Marking Materials, Key Laboratory of Printing & Packaging Material and Technology, Beijing Institute of Graphic Communication, Beijing 102600, P. R. China
| | - Weimin Zhang
- Laboratory of Optoelectronic and Information Marking Materials, Key Laboratory of Printing & Packaging Material and Technology, Beijing Institute of Graphic Communication, Beijing 102600, P. R. China
| | - Ti Wu
- Laboratory of Optoelectronic and Information Marking Materials, Key Laboratory of Printing & Packaging Material and Technology, Beijing Institute of Graphic Communication, Beijing 102600, P. R. China
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6
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Chen J, Yang J, Guo Y, Liu Y. Acceptor Modulation Strategies for Improving the Electron Transport in High-Performance Organic Field-Effect Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2104325. [PMID: 34605074 DOI: 10.1002/adma.202104325] [Citation(s) in RCA: 27] [Impact Index Per Article: 13.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/06/2021] [Revised: 09/04/2021] [Indexed: 06/13/2023]
Abstract
High-performance ambipolar and electronic type semiconducting polymers are essential for fabricating various organic optoelectronic devices and complementary circuits. This review summarizes the strategies of improving the electron transport of semiconducting polymers via acceptor modulation strategies, which include the use of single, dual, triple, multiple, and all acceptors as well as the fusion of multiple identical acceptors to obtain new heterocyclic acceptors. To further improve the electron transport of semiconducting polymers, the introduction of strong electron-withdrawing groups can enhance the electron-withdrawing ability of donors and acceptors, thereby facilitating electron injection and suppressing hole accumulation. In addition, the relationships between the molecular structure, frontier molecular orbital energy levels, thin film morphology, microstructure, processing conditions, and device performances are also comprehensively discussed. Finally, the challenges encountered in this research area are proposed and the future outlook is presented.
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Affiliation(s)
- Jinyang Chen
- Beijing National Laboratory for Molecular Sciences, Organic Solids Laboratory, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Chemical Science, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Jie Yang
- Beijing National Laboratory for Molecular Sciences, Organic Solids Laboratory, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Yunlong Guo
- Beijing National Laboratory for Molecular Sciences, Organic Solids Laboratory, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Chemical Science, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Organic Solids Laboratory, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Chemical Science, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
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7
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Feng K, Shan W, Ma S, Wu Z, Chen J, Guo H, Liu B, Wang J, Li B, Woo HY, Fabiano S, Huang W, Guo X. Fused Bithiophene Imide Dimer-Based n-Type Polymers for High-Performance Organic Electrochemical Transistors. Angew Chem Int Ed Engl 2021; 60:24198-24205. [PMID: 34467624 DOI: 10.1002/anie.202109281] [Citation(s) in RCA: 34] [Impact Index Per Article: 11.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/12/2021] [Revised: 08/14/2021] [Indexed: 01/10/2023]
Abstract
The development of n-type organic electrochemical transistors (OECTs) lags far behind their p-type counterparts. In order to address this dilemma, we report here two new fused bithiophene imide dimer (f-BTI2)-based n-type polymers with a branched methyl end-capped glycol side chain, which exhibit good solubility, low-lying LUMO energy levels, favorable polymer chain orientation, and efficient ion transport property, thus yielding a remarkable OECT electron mobility (μe ) of up to ≈10-2 cm2 V-1 s-1 and volumetric capacitance (C*) as high as 443 F cm-3 , simultaneously. As a result, the f-BTI2TEG-FT-based OECTs deliver a record-high maximum geometry-normalized transconductance of 4.60 S cm-1 and a maximum μC* product of 15.2 F cm-1 V-1 s-1 . The μC* figure of merit is more than one order of magnitude higher than that of the state-of-the-art n-type OECTs. The emergence of f-BTI2TEG-FT brings a new paradigm for developing high-performance n-type polymers for low-power OECT applications.
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Affiliation(s)
- Kui Feng
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China.,Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
| | - Wentao Shan
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China.,Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
| | - Suxiang Ma
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China.,Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
| | - Ziang Wu
- Department of Chemistry, Korea University, Seoul, 136-713, South Korea
| | - Jianhua Chen
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China.,Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
| | - Han Guo
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China.,Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
| | - Bin Liu
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China.,Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
| | - Junwei Wang
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China.,Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
| | - Bangbang Li
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China.,Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
| | - Han Young Woo
- Department of Chemistry, Korea University, Seoul, 136-713, South Korea
| | - Simone Fabiano
- Laboratory of Organic Electronics, Department of Science and Technology, Linköping University, 60174, Norrköping, Sweden
| | - Wei Huang
- School of Automation Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu, Sichuan, 611731, China
| | - Xugang Guo
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China.,Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
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8
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Feng K, Guo H, Sun H, Guo X. n-Type Organic and Polymeric Semiconductors Based on Bithiophene Imide Derivatives. Acc Chem Res 2021; 54:3804-3817. [PMID: 34617720 DOI: 10.1021/acs.accounts.1c00381] [Citation(s) in RCA: 39] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/28/2023]
Abstract
ConspectusIn the last three decades, p-type (hole-transporting) organic and polymeric semiconductors have achieved great success in terms of materials diversity and device performance, while the development of n-type (electron-transporting) analogues greatly lags behind, which is limited by the scarcity of highly electron-deficient building blocks with compact geometry and good solubility. However, such n-type semiconductors are essential due to the existence of the p-n junction and a complementary metal oxide semiconductor (CMOS)-like circuit in organic electronic devices. Among various electron-deficient building blocks, imide-functionalized arenes, such as naphthalene diimide (NDI) and perylene diimide (PDI), have been proven to be the most promising ones for developing n-type organic and polymeric semiconductors. Nevertheless, phenyl-based NDI and PDI lead to sizable steric hindrance with neighboring (hetero)arenes and a high degree of backbone distortion in the resultant semiconductors, which greatly limits their microstructural ordering and charge transport. To attenuate the steric hindrance associated with NDI and PDI, a novel imide-functionalized heteroarene, bithiophene imide (BTI), was designed; however, the BTI-based semiconductors suffer from high-lying frontier molecular orbital (FMO) energy levels as a result of their electron-rich thiophene framework and monoimide group, which is detrimental to n-type performance.In this Account, we review a series of BTI derivatives developed via various strategies, including ring fusion, thiazole substitution, fluorination, cyanation, and chalcogen substitution, and elaborate the synthesis routes designed to overcome the synthesis challenges due to their high electron deficiency. After structural optimization, these BTI derivatives can not only retain the advantages of good solubility, a planar backbone, and small steric hindrance inherited from BTI but also have greatly suppressed FMO levels. These novel building blocks enable the construction of a great number of n-type organic and polymeric semiconductors, particularly acceptor-acceptor (or all-acceptor)-type polymers, with remarkable performance in various devices, including electron mobility (μe) of 3.71 cm2 V-1 s-1 in organic thin-film transistors (OTFTs), a power conversion efficiency (PCE) of 15.2% in all-polymer solar cells (all-PSCs), a PCE of 20.8% in inverted perovskite solar cells (PVSCs), electrical conductivity (σ) of 0.34 S cm-1 and a power factor (PF) of 1.52 μW m-1 K-2 in self-doped diradicals, and σ of 23.3 S cm-1 and a PF of ∼10 μW m-1 K-2 in molecularly n-doped polymers, all of which are among the best values in each type of device. The structure-property-device performance correlations of these n-type semiconductors are elucidated. The design strategy and synthesis of these novel BTI derivatives provide important information for developing highly electron-deficient building blocks with optimized physicochemical properties. Finally, we offer our insights into the further development of BTI derivatives and semiconductors built from them.
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Affiliation(s)
- Kui Feng
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), No. 1088, Xueyuan Road, Shenzhen, Guangdong 518055, China
| | - Han Guo
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), No. 1088, Xueyuan Road, Shenzhen, Guangdong 518055, China
| | - Huiliang Sun
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), No. 1088, Xueyuan Road, Shenzhen, Guangdong 518055, China
| | - Xugang Guo
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), No. 1088, Xueyuan Road, Shenzhen, Guangdong 518055, China
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9
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Feng K, Shan W, Ma S, Wu Z, Chen J, Guo H, Liu B, Wang J, Li B, Woo HY, Fabiano S, Huang W, Guo X. Fused Bithiophene Imide Dimer‐Based n‐Type Polymers for High‐Performance Organic Electrochemical Transistors. Angew Chem Int Ed Engl 2021. [DOI: 10.1002/ange.202109281] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022]
Affiliation(s)
- Kui Feng
- Department of Materials Science and Engineering Southern University of Science and Technology (SUSTech) Shenzhen Guangdong 518055 China
- Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices Southern University of Science and Technology (SUSTech) Shenzhen Guangdong 518055 China
| | - Wentao Shan
- Department of Materials Science and Engineering Southern University of Science and Technology (SUSTech) Shenzhen Guangdong 518055 China
- Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices Southern University of Science and Technology (SUSTech) Shenzhen Guangdong 518055 China
| | - Suxiang Ma
- Department of Materials Science and Engineering Southern University of Science and Technology (SUSTech) Shenzhen Guangdong 518055 China
- Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices Southern University of Science and Technology (SUSTech) Shenzhen Guangdong 518055 China
| | - Ziang Wu
- Department of Chemistry Korea University Seoul 136-713 South Korea
| | - Jianhua Chen
- Department of Materials Science and Engineering Southern University of Science and Technology (SUSTech) Shenzhen Guangdong 518055 China
- Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices Southern University of Science and Technology (SUSTech) Shenzhen Guangdong 518055 China
| | - Han Guo
- Department of Materials Science and Engineering Southern University of Science and Technology (SUSTech) Shenzhen Guangdong 518055 China
- Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices Southern University of Science and Technology (SUSTech) Shenzhen Guangdong 518055 China
| | - Bin Liu
- Department of Materials Science and Engineering Southern University of Science and Technology (SUSTech) Shenzhen Guangdong 518055 China
- Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices Southern University of Science and Technology (SUSTech) Shenzhen Guangdong 518055 China
| | - Junwei Wang
- Department of Materials Science and Engineering Southern University of Science and Technology (SUSTech) Shenzhen Guangdong 518055 China
- Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices Southern University of Science and Technology (SUSTech) Shenzhen Guangdong 518055 China
| | - Bangbang Li
- Department of Materials Science and Engineering Southern University of Science and Technology (SUSTech) Shenzhen Guangdong 518055 China
- Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices Southern University of Science and Technology (SUSTech) Shenzhen Guangdong 518055 China
| | - Han Young Woo
- Department of Chemistry Korea University Seoul 136-713 South Korea
| | - Simone Fabiano
- Laboratory of Organic Electronics Department of Science and Technology Linköping University 60174 Norrköping Sweden
| | - Wei Huang
- School of Automation Engineering University of Electronic Science and Technology of China (UESTC) Chengdu Sichuan 611731 China
| | - Xugang Guo
- Department of Materials Science and Engineering Southern University of Science and Technology (SUSTech) Shenzhen Guangdong 518055 China
- Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices Southern University of Science and Technology (SUSTech) Shenzhen Guangdong 518055 China
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10
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Feng K, Guo H, Wang J, Shi Y, Wu Z, Su M, Zhang X, Son JH, Woo HY, Guo X. Cyano-Functionalized Bithiophene Imide-Based n-Type Polymer Semiconductors: Synthesis, Structure-Property Correlations, and Thermoelectric Performance. J Am Chem Soc 2021; 143:1539-1552. [PMID: 33445867 DOI: 10.1021/jacs.0c11608] [Citation(s) in RCA: 57] [Impact Index Per Article: 19.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/07/2023]
Abstract
n-Type polymers with deep-positioned lowest unoccupied molecular orbital (LUMO) energy levels are essential for enabling n-type organic thin-film transistors (OTFTs) with high stability and n-type organic thermoelectrics (OTEs) with high doping efficiency and promising thermoelectric performance. Bithiophene imide (BTI) and its derivatives have been demonstrated as promising acceptor units for constructing high-performance n-type polymers. However, the electron-rich thiophene moiety in BTI leads to elevated LUMOs for the resultant polymers and hence limits their n-type performance and intrinsic stability. Herein, we addressed this issue by introducing strong electron-withdrawing cyano functionality on BTI and its derivatives. We have successfully overcome the synthetic challenges and developed a series of novel acceptor building blocks, CNI, CNTI, and CNDTI, which show substantially higher electron deficiencies than does BTI. On the basis of these novel building blocks, acceptor-acceptor type homopolymers and copolymers were successfully synthesized and featured greatly suppressed LUMOs (-3.64 to -4.11 eV) versus that (-3.48 eV) of the control polymer PBTI. Their deep-positioned LUMOs resulted in improved stability in OTFTs and more efficient n-doping in OTEs for the corresponding polymers with a highest electrical conductivity of 23.3 S cm-1 and a power factor of ∼10 μW m-1 K-2. The conductivity and power factor are among the highest values reported for solution-processed molecularly n-doped polymers. The new CNI, CNTI, and CNDTI offer a remarkable platform for constructing n-type polymers, and this study demonstrates that cyano-functionalization of BTI is a very effective strategy for developing polymers with deep-lying LUMOs for high-performance n-type organic electronic devices.
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Affiliation(s)
- Kui Feng
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), No. 1088, Xueyuan Road, Shenzhen, Guangdong 518055, China
| | - Han Guo
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), No. 1088, Xueyuan Road, Shenzhen, Guangdong 518055, China
| | - Junwei Wang
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), No. 1088, Xueyuan Road, Shenzhen, Guangdong 518055, China
| | - Yongqiang Shi
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), No. 1088, Xueyuan Road, Shenzhen, Guangdong 518055, China
| | - Ziang Wu
- Department of Chemistry, Korea University, 145 Anam-Ro, Seongbuk-Gu, Seoul 02841, South Korea
| | - Mengyao Su
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), No. 1088, Xueyuan Road, Shenzhen, Guangdong 518055, China
| | - Xianhe Zhang
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), No. 1088, Xueyuan Road, Shenzhen, Guangdong 518055, China
| | - Jae Hoon Son
- Department of Chemistry, Korea University, 145 Anam-Ro, Seongbuk-Gu, Seoul 02841, South Korea
| | - Han Young Woo
- Department of Chemistry, Korea University, 145 Anam-Ro, Seongbuk-Gu, Seoul 02841, South Korea
| | - Xugang Guo
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), No. 1088, Xueyuan Road, Shenzhen, Guangdong 518055, China
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11
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Liu F, Ma F, Chen Q, Zhou E, Zhang P, Cui Z, Liu Z, Huang Y. Synergistic non-bonding interactions based on diketopyrrolo-pyrrole for elevated photoacoustic imaging-guided photothermal therapy. Biomater Sci 2021; 9:908-916. [DOI: 10.1039/d0bm01569e] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/22/2023]
Abstract
Synergistic non-bonding interactions in fluorine and chalcogen-substituted diketopyrrolopyrrole nanoagents for elevated photoacoustic imaging-guided photothermal therapy.
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Affiliation(s)
- Fang Liu
- Laboratory for NanoMedical Photonics
- School of Basic Medical Science
- Henan University
- Kaifeng 475004
- China
| | - Feiyan Ma
- Laboratory for NanoMedical Photonics
- School of Basic Medical Science
- Henan University
- Kaifeng 475004
- China
| | - Qing Chen
- Laboratory for NanoMedical Photonics
- School of Basic Medical Science
- Henan University
- Kaifeng 475004
- China
| | - Enbao Zhou
- Laboratory for NanoMedical Photonics
- School of Basic Medical Science
- Henan University
- Kaifeng 475004
- China
| | - Puwen Zhang
- School of Pharmacy
- Henan University
- Kaifeng 475004
- P. R. China
- Laboratory for NanoMedical Photonics
| | - Zhanjun Cui
- Laboratory for NanoMedical Photonics
- School of Basic Medical Science
- Henan University
- Kaifeng 475004
- China
| | - Zhonghua Liu
- Laboratory for NanoMedical Photonics
- School of Basic Medical Science
- Henan University
- Kaifeng 475004
- China
| | - Yongwei Huang
- Laboratory for NanoMedical Photonics
- School of Basic Medical Science
- Henan University
- Kaifeng 475004
- China
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12
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Tri NN, Hailu YM, Van Duong L, Nguyen MT. Influence of Fluorination on Energetic Parameters of Silole, Phosphole, Thiophene, Oligomers of Silole and Related Acenes. J Fluor Chem 2020. [DOI: 10.1016/j.jfluchem.2020.109665] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
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13
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Liao M, Duan J, Peng P, Zhang J, Zhou M. Progress in the synthesis of imide-based N-type polymer semiconductor materials. RSC Adv 2020; 10:41764-41779. [PMID: 35516572 PMCID: PMC9057848 DOI: 10.1039/d0ra04972g] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/05/2020] [Accepted: 09/17/2020] [Indexed: 11/26/2022] Open
Abstract
Based on the development situation and challenge of organic photovoltaics (OPVs) and organic field-effect transistors (OFETs), it is necessary to develop N-type polymer building blocks with specific structures and performance. After decades of development, some excellent polymer receptor building blocks have been developed to construct N-type organic semiconductors, which have been applied in OFETs and OPVs. In this paper, four kinds of imide (bisthiophene imide BTI, bisthiazolimide BTz, naphthalimide NDI, and perylene imide PDI)-based N-type polymer semiconductor materials are introduced, and their applications in OFETs and OPVs are analyzed, too. The molecular structure design and the performance of corresponding materials are summarized to provide further guidance and reference for the design and development of high performance N-type polymer semiconductors. Representative molecular structures of four N-type polymer semiconductors materials (a: N2000; b: PPDI-DTT, c: TBDI-DT and d: PDTzTIT) based on NDI, PDI, BTI and BTzI, respectively.![]()
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Affiliation(s)
- Mao Liao
- School of New Energy and Material, Southwest Petroleum University No. 8 Xindu Avenue, Xindu District Chengdu Sichuan 610500 People's Republic of China +8613880947076
| | - Jieming Duan
- School of New Energy and Material, Southwest Petroleum University No. 8 Xindu Avenue, Xindu District Chengdu Sichuan 610500 People's Republic of China +8613880947076.,CNBM (Chengdu) Optoelectronic Materials Co., Ltd. No. 558, 2nd Airport Road, Shuangliu District Chengdu Sichuan 610207 People's Republic of China
| | - Peng'ao Peng
- School of New Energy and Material, Southwest Petroleum University No. 8 Xindu Avenue, Xindu District Chengdu Sichuan 610500 People's Republic of China +8613880947076
| | - Jingfeng Zhang
- School of New Energy and Material, Southwest Petroleum University No. 8 Xindu Avenue, Xindu District Chengdu Sichuan 610500 People's Republic of China +8613880947076
| | - Ming Zhou
- School of New Energy and Material, Southwest Petroleum University No. 8 Xindu Avenue, Xindu District Chengdu Sichuan 610500 People's Republic of China +8613880947076.,State Key Laboratory of Oil and Gas Reservoir Geology and Exploitation, Southwest Petroleum University No. 8 Xindu Avenue, Xindu District Chengdu Sichuan 610500 People's Republic of China
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