Ultra-High Sensitive NO2 Gas Sensor Based on Tunable Polarity Transport in CVD-WS2/IGZO p-N Heterojunction

Enhanced NO2 Sensitivity of Vertically Stacked van der Waals Heterostructure Gas Sensor and Its Remarkable Electric and Mechanical Tunability

Nanodevices based on van der Waals heterostructures have been predicted, and shown, to have unprecedented operational principles and functionalities that hold promise for highly sensitive and selective gas sensors with rapid response times and minimal power consumption. In this study, we fabricated gas sensors based on vertical MoS2/WS2 van der Waals heterostructures and investigated their gas sensing capabilities. Compared with individual MoS2 or WS2 gas sensors, the MoS2/WS2 van der Waals heterostructure gas sensors are shown to have enhanced sensitivity, faster response times, rapid recovery, and a notable selectivity, especially toward NO2. In combination with a theoretical model, we show that it is important to take into account created trapped states (flat bands) induced by the adsorption of gas molecules, which capture charges and alter the inherent built-in potential of van der Waals heterostructure gas sensors. Additionally, we note that the performance of these MoS2/WS2 heterostructure gas sensors could be further enhanced using electrical gating and mechanical strain. Our findings highlight the importance of understanding the effects of altered built-in potentials arising from gas molecule adsorption induced flat bands, thus offering a way to enhance the gas sensing performance of van der Waals heterostructure gas sensors.

The construction of S-scheme heterostructure in ultrathin WS2/Zn3In2S6 nanosheets for enhanced photocatalytic hydrogen evolution

Metal sulfide based photocatalysts are considered to be economic, environmentally benign and renewable. The rapid recombination of photogenerated electrons and holes and low solar energy utilization efficiency, however, remain a huge bottleneck. Herein, two-dimensional/two-dimensional (2D/2D) S-scheme WS2/Zn3In2S6 heterostructure with ultrathin nanosheets intervening between neighboring component has been designed. The large and intimate S-scheme heterojunctions facilitate interfacial charge separation/transfer and optimize the available redox potential. Besides, the ultrathin 2D/2D heterostructure ensures large specific surface area, maximized interface synergistic interaction, and effective exposure of surface active sites. As a result, 2 wt% WS2/Zn3In2S6 exhibits a high photocatalytic hydrogen production rate of 30.21 mmol·g-1·h-1 under simulated solar light illumination with an apparent quantum efficiency of 56.1% at 370 nm monochromatic light, far exceeding pristine Zn3In2S6 (6.65 mmol·g-1·h-1). Our work underscores the significance of integrating morphology engineering and S-scheme heterojunctions design for high-efficient and low-cost photocatalysts.

Recent Advances of Graphene Quantum Dots in Chemiresistive Gas Sensors

Graphene quantum dots (GQDs), as 0D graphene nanomaterials, have aroused increasing interest in chemiresistive gas sensors owing to their remarkable physicochemical properties and tunable electronic structures. Research on GQDs has been booming over the past decades, and a number of excellent review articles have been provided on various other sensing principles of GQDs, such as fluorescence-based ion-sensing, bio-sensing, bio-imaging, and electrochemical, photoelectrochemical, and electrochemiluminescence sensing, and therapeutic, energy and catalysis applications. However, so far, there is no single review article on the application of GQDs in the field of chemiresistive gas sensing. This is our primary inspiration for writing this review, with a focus on the chemiresistive gas sensors reported using GQD-based composites. In this review, the various synthesized strategies of GQDs and its composites, gas sensing enhancement mechanisms, and the resulting sensing characteristics are presented. Finally, the current challenges and future prospects of GQDs in the abovementioned application filed have been discussed for the more rational design of advanced GQDs-based gas-sensing materials and innovative gas sensors with novel functionalities.

MOF-Based Chemiresistive Gas Sensors: Toward New Functionalities

The sensing performances of gas sensors must be improved and diversified to enhance quality of life by ensuring health, safety, and convenience. Metal-organic frameworks (MOFs), which exhibit an extremely high surface area, abundant porosity, and unique surface chemistry, provide a promising framework for facilitating gas-sensor innovations. Enhanced understanding of conduction mechanisms of MOFs has facilitated their use as gas-sensing materials, and various types of MOFs have been developed by examining the compositional and morphological dependences and implementing catalyst incorporation and light activation. Owing to their inherent separation and absorption properties and catalytic activity, MOFs are applied as molecular sieves, absorptive filtering layers, and heterogeneous catalysts. In addition, oxide- or carbon-based sensing materials with complex structures or catalytic composites can be derived by the appropriate post-treatment of MOFs. This review discusses the effective techniques to design optimal MOFs, in terms of computational screening and synthesis methods. Moreover, the mechanisms through which the distinctive functionalities of MOFs as sensing materials, heterostructures, and derivatives can be incorporated in gas-sensor applications are presented.

Moisture-Resistant and Highly Selective NH3 Sensor Based on CdS/WS2 Composite Heterojunction

This study reports the synthesis of CdS/WS2 composites via a green and ultra-low-cost hydrothermal method. By controlling the relative mass ratio between WS2 and CdS, an n-n type CdS/WS2 heterostructure, with excellent NH3 gas-sensitive properties, was developed and investigated at room temperature. Compared with pristine WS2 and CdS, the CdS/WS2-40%wt composite exhibited excellent selectivity of more than 4 orders of magnitude for sensing NH3, a very short recovery time of 3 s, and ultrahigh selectivity at room temperature. The large specific surface area of the CdS/WS2 composite increased the active sites for the gas-sensitive reaction. Additionally, the 2D morphology of CdS/WS2 and the heterojunction formed between WS2 and CdS contributed to the improved performance. Anti-humidity interference tests showed that the CdS/WS2 sample remained stable under real-time monitoring of NH3 at different ambient humidity values. This study paves the way for designing high-performance gas sensors operating at room temperature.

Modulated wafer-scale WS2 films based on atomic-layer-deposition for various device applications

Tungsten disulfide (WS2) is promising for potential applications in transistors and gas sensors due to its high mobility and high adsorption of gas molecules onto edge sites. This work comprehensively studied the deposition temperature, growth mechanism, annealing conditions, and Nb doping of WS2 to prepare high-quality wafer-scale N- and P-type WS2 films by atomic layer deposition (ALD). It shows that the deposition and annealing temperature greatly influence the electronic properties and crystallinity of WS2, and insufficient annealing will seriously reduce the switch ratio and on-state current of the field effect transistors (FETs). Besides, the morphologies and carrier types of WS2 films can be controlled by adjusting the processes of ALD. The obtained WS2 films and the films with vertical structures were used to fabricate FETs and gas sensors, respectively. Among them, the Ion/Ioff ratio of N- and P-type WS2 FETs is 105 and 102, respectively, and the response of N- and P-type gas sensors is 14% and 42% under 50 ppm NH3 at room temperature, respectively. We have successfully demonstrated a controllable ALD process to modify the morphology and doping behavior of WS2 films with various device functionalities based on acquisitive characteristics.

WS2 and WS2-ZnO Chemiresistive Gas Sensors: The Role of Analyte Charge Asymmetry and Molecular Size

We investigate the interaction of various analytes (toluene, acetone, ethanol, and water) possessing different structures, bonding, and molecular sizes with a laser-exfoliated WS₂ sensing material in a chemiresistive sensor. The sensor showed a clear response to all analytes, which was significantly enhanced by modifying the WS₂ surface. This was achieved by creating WS₂-ZnO heterojunctions via the deposition of ZnO nanoparticles on the WS₂ surface with a high-throughput, atmospheric-pressure spatial atomic layer deposition system. Water and ethanol produced a much higher response compared to acetone and toluene for both the WS₂ and WS₂-ZnO sensing mediums. We resolved that the charge-asymmetry points in analyte molecules play a key role in determining the sensor response. High charge-asymmetry points correspond to highly polar bonds (HPBs) in a neutral molecule that have a high probability of interaction with the sensing medium. Our results indicate that the polarity of the HPBs primarily dictates the interaction between the analyte and sensing medium and consequently controls the response of the sensor. Moreover, the size of the analyte molecule was found to affect the sensing response; if two molecules have the same HPBs and are exposed to the same sensing medium, the smaller molecule is likely to produce a higher and faster response. Our study provides a comprehensive picture of analyte-sensor interactions that can help in advancing semiconductor gas sensors, including those based on two-dimensional materials.

Overview of Engineering Carbon Nanomaterials Such As Carbon Nanotubes (CNTs), Carbon Nanofibers (CNFs), Graphene and Nanodiamonds and Other Carbon Allotropes inside Porous Anodic Alumina (PAA) Templates

The fabrication and design of carbon-based hierarchical structures with tailored nano-architectures have attracted the enormous attention of the materials science community due to their exceptional chemical and physical properties. The collective control of nano-objects, in terms of their dimensionality, orientation and size, is of paramount importance to expand the implementation of carbon nanomaterials across a large variety of applications. In this context, porous anodic alumina (PAA) has become an attractive template where the pore morphologies can be straightforwardly modulated. The synthesis of diverse carbon nanomaterials can be performed using PAA templates, such as carbon nanotubes (CNTs), carbon nanofibers (CNFs), and nanodiamonds, or can act as support for other carbon allotropes such as graphene and other carbon nanoforms. However, the successful growth of carbon nanomaterials within ordered PAA templates typically requires a series of stages involving the template fabrication, nanostructure growth and finally an etching or electrode metallization steps, which all encounter different challenges towards a nanodevice fabrication. The present review article describes the advantages and challenges associated with the fabrication of carbon materials in PAA based materials and aims to give a renewed momentum to this topic within the materials science community by providing an exhaustive overview of the current synthesis approaches and the most relevant applications based on PAA/Carbon nanostructures materials. Finally, the perspective and opportunities in the field are presented.

Room-Temperature Semiconductor Gas Sensors: Challenges and Opportunities

Our demand for ubiquitous and reliable gas detection is spurring the design of intelligent and enabling gas sensors for the next-generation Internet of Things and Artificial Intelligence. The desire to introduce gas sensors everywhere is fueled by opportunities to create room-temperature semiconductor gas sensors with ultralow power consumption. In this Perspective, we provide an overview of the recent achievement of room-temperature gas sensors that have been translated from the advances in the design of the chemical and physical properties of low-dimensional semiconductor nanomaterials. The emergence of solution-processable nanomaterials opens up remarkable opportunities to integrate into high-performance and flexible room-temperature gas sensors by using low-temperature, large-area, solution-based methods instead of costly, high-vacuum, high-temperature device manufacturing processes. We review the fundamental factors which affect the receptor and transducer functions of semiconductor gas sensors. We also discuss challenges that must be addressed in the move to the continuous miniaturization and evolution of semiconductor gas sensors.

WS2 Nanorod as a Remarkable Acetone Sensor for Monitoring Work/Public Places

Here, we report the synthesis of the WS₂ nanorods (NRs) using an eco-friendly and facile hydrothermal method for an acetone-sensing application. This study explores the acetone gas-sensing characteristics of the WS₂ nanorod sensor for 5, 10, and 15 ppm concentrations at 25 °C, 50 °C, 75 °C, and 100 °C. The WS₂ nanorod sensor shows the highest sensitivity of 94.5% at 100 °C for the 15 ppm acetone concentration. The WS₂ nanorod sensor also reveals the outstanding selectivity of acetone compared to other gases, such as ammonia, ethanol, acetaldehyde, methanol, and xylene at 100 °C with a 15 ppm concentration. The estimated selectivity coefficient indicates that the selectivity of the WS₂ nanorod acetone sensor is 7.1, 4.5, 3.7, 2.9, and 2.0 times higher than xylene, acetaldehyde, ammonia, methanol, and ethanol, respectively. In addition, the WS₂ nanorod sensor also divulges remarkable stability of 98.5% during the 20 days of study. Therefore, it is concluded that the WS₂ nanorod can be an excellent nanomaterial for developing acetone sensors for monitoring work/public places.

Humidity-Tolerant Room-Temperature Selective Dual Sensing and Discrimination of NH3 and NO Using a WS2/MWCNT Composite

Continuous detection of toxic and hazardous gases like nitric oxide (NO) and ammonia (NH₃) is needed for environmental management and noninvasive diagnosis of various diseases. However, to the best of our knowledge, dual detection of these two gases has not been previously reported. To address the challenge, we demonstrate the design and fabrication of low-cost NH₃ and NO dual gas sensors using tungsten disulfide/multiwall carbon nanotube (WS₂/MWCNT) nanocomposites as sensing channels which maintained their performance in a humid environment. The composite-based device has shown successful dual detection at temperatures down to 18 °C and relative humidity of 90%. For 0.1 ppm ammonia, it exhibited a p-type conduction with response and recovery times of 102 and 261 s, respectively; on the other hand, with NO (10 ppb, n-type), these times were 285 and 198 s, respectively. The device with 5 mg MWCNTs possesses a superior selectivity along with a relative response of ≈7% (5 ppb) and ≈5% (0.1 ppm) for NO and NH₃, respectively, at 18 °C. The response is less affected by relative humidity, and this is attributed to the presence of MWCNTs that are hydrophobic in nature. Upon simultaneous exposure to NO (5-10 ppb) and NH₃ (0.1-5 ppm), the response was dominated by NO, implying clear discrimination to the simultaneous presence of these two gases. We propose a sensing mechanism based on adsorption/desportion and accompanied charge transfer between the adsorbed gas molecules and sensing surface. The results suggest that an optimized weight ratio of WS₂ and MWCNTs could govern favorable sensing conditions for a particular gas molecule.

Self-biased wavelength selective photodetection in an n-IGZO/p-GeSe heterostructure by polarity flipping

Transparent semiconductor oxides with two-dimensional (2D) heterostructures have been extensively studied as new materials for thin-film transistors and photosensors due to their remarkable photovoltaic characteristics, making them useful for newly developed optoelectronics. Here we demonstrate the fabrication and characterization of an ITO/n-IGZO/p-GeSe transparent selective wavelength photodetector. The wavelength-dependent photovoltaic behavior of the n-IGZO/p-GeSe heterostructure under UV-Visible laser light shifts the I-V curves down with positive V_oc and negative I_sc values of about 0.12 V and -49 nA and 0.09 V and -17 nA, respectively. Interestingly, when an NIR laser irradiated the device, the I-V curves shifted up with negative V_oc and positive I_sc values of about -0.11 V and 45 nA, respectively. This behavior is attributed to the free carrier concentration induced by photogenerated carriers across the device at different points that varied with the wavelength-dependent photon absorption. Consequently, the direction of the electric field polarity across the junction can be flipped. This study demonstrates a zero-bias near-infrared (NIR) photodetector with a high photoresponsivity of 538.9 mA W^-1, a fast rise time of 25.2 ms, and a decay time of 25.08 ms. Furthermore, we observed a detectivity (D) of 8.4 × 10⁹ Jones, a normalized photocurrent to dark current ratio (NPDR) of 2.8 × 10¹⁰ W^-1, and a noise equivalent power (NEP) of 2.2 × 10^-14 W Hz^-1/2. Our strategy opens alternative possibilities for scalable, low-cost, multifunctional transparent near-infrared photosensors with selective wavelength photodetection.

High-Performance Room-Temperature Conductometric Gas Sensors: Materials and Strategies

Chemiresistive sensors have gained increasing interest in recent years due to the necessity of low-cost, effective, high-performance gas sensors to detect volatile organic compounds (VOC) and other harmful pollutants. While most of the gas sensing technologies rely on the use of high operation temperatures, which increase usage cost and decrease efficiency due to high power consumption, a particular subset of gas sensors can operate at room temperature (RT). Current approaches are aimed at the development of high-sensitivity and multiple-selectivity room-temperature sensors, where substantial research efforts have been conducted. However, fewer studies presents the specific mechanism of action on why those particular materials can work at room temperature and how to both enhance and optimize their RT performance. Herein, we present strategies to achieve RT gas sensing for various materials, such as metals and metal oxides (MOs), as well as some of the most promising candidates, such as polymers and hybrid composites. Finally, the future promising outlook on this technology is discussed.

Construction of organic-inorganic "chelate" adsorption sites on metal oxide semiconductor for room temperature NO2 sensing

Metal oxide semiconductors (MOS) have been extensively studied for gas sensing due to their excellent chemical stability and adjustable electronic properties. However, there is still a lack of ingenious design strategies to achieve customizable gas detection in complex environments. Herein, a novel and scalable strategy of constructing organic-inorganic "chelate" adsorption sites is proposed to promote the affinity of MOS sensing materials to target molecules. Specifically, 3-aminopropyltriethoxysilane (APTES)-functionalized reduced graphene oxide (rGO) was decorated on In₂O₃ tubes (AG/In_x), and its NO₂ sensing performance was studied. As a result, the optimal AG/In_x shows boosted room-temperature NO₂ response, and its response to 1 ppm NO₂ is 4.8 times that of In₂O₃. More attractively, the optimal AG/In_x exhibits good selectivity, as well as outstanding detection ability (R_g/R_a = 1.6) for low concentration NO₂ (20 ppb). Experimental results suggest that APTES-rGO not only acts as the electron acceptor to accelerate charge transfer, but also enhances NO₂ adsorption. Further theoretical calculations reveal that NO₂ is simultaneously adsorbed at rGO and APTES via a flexible "chelate" mechanism. The multidentate adsorption configuration remarkably strengthens the NO₂-host interaction, which is conducive to improving sensing performance. This work may inspire the material design of a new generation high-performance gas sensors.

Synergistic improvement of sensing performance in ferroelectric transistor gas sensors using remnant polarization

Gaseous pollutants, including nitrogen oxides, pose a severe threat to ecosystems and human health; therefore, developing reliable gas-sensing systems to detect them is becoming increasingly important. Among the various options, metal-oxide-based gas sensors have attracted attention due to their capability for real-time monitoring and large response. In particular, in the field of materials science, there has been extensive research into controlling the morphological properties of metal oxides. However, these approaches have limitations in terms of controlling the response, sensitivity, and selectivity after the sensing material is deposited. In this study, we propose a novel method to improve the gas-sensing performance by utilizing the remnant polarization of ferroelectric thin-film transistor (FeTFT) gas sensors. The proposed FeTFT gas sensor has IGZO and HZO as the conducting channel and ferroelectric layer, respectively. It is demonstrated that the response and sensitivity of FeTFT gas sensors can be modulated by engineering the polarization of the ferroelectric layer. The amount of reaction sites in IGZO, including electrons and oxygen vacancy-induced negatively charged oxygen, is changed depending on upward and downward polarization. The results of this study provide an essential foundation for further development of gas sensors with tunable sensing properties.

Gate-Tuned Gas Molecule Sensitivity of a Two-Dimensional Semiconductor

In this work, we develop a gate-tunable gas sensor based on a MoS2/hBN heterostructure field effect transistor. Through experimental measurements and numerical simulations, we systematically reveal a principle that relates the concentration of the target gas and sensing signals (ΔI/I0) as a function of gate bias. Because a linear relationship between ΔI/I0 and the gas concentration guarantees reliable sensor operation, the optimal gate bias condition for linearity was investigated. Taking NO2 and NH3 as target molecules, it is clarified that the bias condition greatly depends on the electron accepting/donating nature of the gas. The effects of the bandgap and polarity of the transition metal dichalcogenides (TMDC) channel are also discussed. In order to achieve linearly increasing signals that are stable with respect to the gas concentration, a sufficiently large VBG within VBG > 0 is required. We expect this work will shed light on a way to precisely design reliable semiconducting gas sensors based on the characteristics of TMDC and target gas molecules.

Exploring optical and electrical gas detection based on zinc-tetra-phenyl-porphyrin sensitizer

We developed optical waveguide (OWG), ultraviolet-visible spectrophotometry (UV-vis), and electrically operated gas sensors utilizing zinc-tetra-phenyl-porphyrin (ZnTPP) as sensitizer. Strikingly, ZnTPP thin-film/K⁺-exchanged glass OWG sensing element exhibits a superior signal-to-noise ratio of 109.6 upon 1 ppm NO₂ gas injection, which is 29.5 and 3.8 times larger than that of UV-vis (absorbance at wavelength of 438 nm) and ZnTPP electrical sensing elements prepared on an alumina ceramic tube, respectively. Further results on Fourier infrared spectra and UV-vis spectra, confirm a strong chemical adsorption of NO₂ gas on ZnTPP. Therefore, our studies highlight the selection of suitable detection technique for analyte sensing with ZnTPP.

Effects of NH3 Plasma and Mg Doping on InGaZnO pH Sensing Membrane

In this study, the effects of magnesium (Mg) doping and Ammonia (NH₃) plasma on the pH sensing capabilities of InGaZnO membranes were investigated. Undoped InGaZnO and Mg-doped pH sensing membranes with NH₃ plasma were examined with multiple material analyses including X-ray diffraction, X-ray photoelectron spectroscopy, secondary ion mass spectroscopy and transmission electron microscope, and pH sensing behaviors of the membrane in electrolyte-insulator-semiconductors. Results indicate that Mg doping and NH₃ plasma treatment could superpositionally enhance crystallization in fine nanostructures, and strengthen chemical bindings. Results indicate these material improvements increased pH sensing capability significantly. Plasma-treated Mg-doped InGaZnO pH sensing membranes show promise for future pH sensing biosensors.

Role of Nanodiamond Grains in the Exfoliation of WS2 Nanosheets and Their Enhanced Hydrogen-Sensing Properties

Herein, for the first time, a combination of detonation nanodiamond (DND)-tungsten disulfide (WS₂) was devised and studied for its selective H₂-sensing properties at room temperature. DND-WS₂ samples were prepared by a sonication-assisted (van der Waals interaction) liquid-phase exfoliation process in low-boiling solvents with DND as a surfactant. The samples were further hydrothermally treated in an autoclave under high pressure and temperature. The as-prepared samples were separated as two parts named DND-WS₂ BH (before hydrothermal) and DND-WS₂ AH (after hydrothermal). The exfoliated bilayer to few-layer DND-doped WS₂ nanosheets were confirmed by ultraviolet-visible spectra, atomic force microscopy, and transmission electron microscopy studies. It was observed that the DND powder not only acted as a surfactant but also doped and expanded on WS₂ nanosheets. The difference between samples BH and AH treatment was further investigated using Raman spectroscopy. The WS₂ and DND-WS₂ samples on SiO₂/Si were fabricated using a sputtered Pd/Ag interdigitated electrode and utilized for H₂ gas-sensing measurements. Surprisingly, the DND-WS₂ exhibits an ultrahigh sensor response of 72.8% to H₂ at 500 ppm when compared to only 9.9% for WS₂ alone. Also, the DND-WS₂ shows a fast response/recovery time, high selectivity, and stability toward H₂ gas. It can be attributed to the correlation of the intergrain phase of DND nanoparticles and WS₂ nanosheets, which contributes to the easy transportation of charge carriers when exposed to the air and H₂ gas atmosphere. Moreover, it is believed that DND-induced WS₂ exfoliation might inspire future synthesis of transition metal dichalcogenides induced by DND in green solvents.

Tungsten Disulfide Nanotube-Modified Conductive Paper-Based Chemiresistive Sensor for the Application in Volatile Organic Compounds' Detection

Toxic and nontoxic volatile organic compound (VOC) gases are emitted into the atmosphere from certain solids and liquids as a consequence of wastage and some common daily activities. Inhalation of toxic VOCs has an adverse effect on human health, so it is necessary to monitor their concentration in the atmosphere. In this work, we report on the fabrication of inorganic nanotube (INT)-tungsten disulfide, paper-based graphene–PEDOT:PSS sheet and WS₂ nanotube-modified conductive paper-based chemiresistors for VOC gas sensing. The WS₂ nanotubes were fabricated by a two-step reaction, that is oxide reduction and sulfurization, carried out at 900 °C. The synthesized nanotubes were characterized by FE-SEM, EDS, XRD, Raman spectroscopy, and TEM. The synthesized nanotubes were 206–267 nm in diameter. The FE-SEM results show the length of the nanotubes to be 4.5–8 µm. The graphene–PEDOT:PSS hybrid conductive paper sheet was fabricated by a continuous coating process. Then, WS₂ nanotubes were drop-cast onto conductive paper for fabrication of the chemiresistors. The feasibility and sensitivity of the WS₂ nanotube-modified paper-based chemiresistor were tested in four VOC gases at different concentrations at room temperature (RT). Experimental results show the proposed sensor to be more sensitive to butanol gas when the concentration ranges from 50 to 1000 ppm. The limit of detection (LOD) of this chemiresistor for butanol gas was 44.92 ppm. The WS₂ nanotube-modified paper-based chemiresistor exhibits good potential as a VOC sensor with the advantages of flexibility, easy fabrication, and low fabrication cost.

Highly Selective Self-Powered Organic-Inorganic Hybrid Heterojunction of a Halide Perovskite and InGaZnO NO2 Sensor

Self-powered sensors can lead to disruptive advances in self-sustainable sensing systems that are imperative for evolving human lifestyles. For the first time, we demonstrate the fabrication of a heterojunction sensor using p-type hybrid-halide perovskites (CH₃NH₃PbBr₃) and an n-type semiconducting metal oxide thin film [InGaZnO (IGZO)] for the detection of NO₂ gas and power generation. Combining the excellent photoelectric properties of perovskites and the remarkable gas-sensing properties of IGZO at room temperature, the devised sensors generate open-circuit voltage and modulate according to the ambient NO₂ concentration. The major challenge in devising self-powered gas sensors is to attain harvesting capability and selectivity simultaneously, owing to perovskites reactivity in the presence of oxygen and humidity. In this work, we developed a novel approach and fabricated a heterojunction sensor using parylene-c as an additional layer to curb the cross-sensitivity and to enhance the selectivity of the sensor. Even under the low concentrations of NO₂, the developed sensor exhibits remarkable sensitivity, selectivity, and repeatability. The devices are sensitive and robust even under extreme humidity conditions (80% R_H) and synthetic air. The devised sensor configuration is one way to eliminate the cross-sensitivity issue of the perovskite-based devices and serves as a reference for the development of self-powered sensors.

Edge-enriched WS2 nanosheets on carbon nanofibers boosts NO2 detection at room temperature

Two-dimensional (2D) transition metal dichalcogenides (TMDs) hold great promise for room temperature (RT) NO₂ sensors. However, the exposure of the edges of TMDs with high adsorption capability and electronic activity remains a great obstacle to achieve high sensor sensitivity. Herein, we demonstrate a high-performance RT NO₂ gas sensor based on WS₂ nanosheets/carbon nanofibers (CNFs) composite with abundant intentionally exposed WS₂ edges. Few-layer WS₂ nanosheets are anchored on CNFs through a hydrothermal process. The approach permits to achieve a coating presenting an optimized active surface area and accessibility of the sensing layers. The exposure of WS₂ edges remarkably improves the sensing properties. Consequently, the WS₂@CNFs composite exhibits excellent selectivity to NO₂ at RT with improved response and much lower detection limit in comparison to the WS₂ and CNFs counterparts. Density functional theory (DFT) calculations verify a surprisingly strong NO₂ adsorption on WS₂ edge sites (adsorption energy 3.40 eV) with a partial charge transfer of 0.394e, while a week adsorption on the basal surface of WS₂ (adsorption energy 0.25 eV) with a partial charge transfer of 0.171e. The strategy proposed herein will be instructive to the design of efficient material structures for low-power NO₂ sensors with optimized performances.

Simple and rapid gas sensing using a single-walled carbon nanotube field-effect transistor-based logic inverter

Single-walled carbon nanotubes (SWCNTs) are promising candidates for gas sensing applications, providing an efficient solution to the device miniaturization challenge and allowing low power consumption. SWCNT gas sensors are mainly based on field-effect transistors (SWCNT-FETs) where the modification of the current flowing through the nanotube is used for gas detection. A major limitation of these SWCNT-FETs lies in the difficulty to measure their transfer curves, since the flowing current typically varies between 10^-12 and 10^-3 A. Thus, voluminous and energy consuming systems are necessary, severely limiting the miniaturization and low energy consumption. Here, we propose an inverter device that combines two SWCNT-FETs which brings a concrete solution to these limitations and simplifies data processing. In this innovative sensing configuration, the gas detection is based on the variation of an electric potential in the volt range instead of a current intensity variation in the microampere range. In this study, the proof of concept is performed using NO₂ gas but can be easily extended to a wide range of gases.

Sea urchin-like microstructure pressure sensors with an ultra-broad range and high sensitivity

Sensitivity and pressure range are two significant parameters of pressure sensors. Existing pressure sensors have difficulty achieving both high sensitivity and a wide pressure range. Therefore, we propose a new pressure sensor with a ternary nanocomposite Fe₂O₃/C@SnO₂. The sea urchin-like Fe₂O₃ structure promotes signal transduction and protects Fe₂O₃ needles from mechanical breaking, while the acetylene carbon black improves the conductivity of Fe₂O₃. Moreover, one part of the SnO₂ nanoparticles adheres to the surfaces of Fe₂O₃ needles and forms Fe₂O₃/SnO₂ heterostructures, while its other part disperses into the carbon layer to form SnO₂@C structure. Collectively, the synergistic effects of the three structures (Fe₂O₃/C, Fe₂O₃/SnO₂ and SnO₂@C) improves on the limited pressure response range of a single structure. The experimental results demonstrate that the Fe₂O₃/C@SnO₂ pressure sensor exhibits high sensitivity (680 kPa⁻¹), fast response (10 ms), broad range (up to 150 kPa), and good reproducibility (over 3500 cycles under a pressure of 110 kPa), implying that the new pressure sensor has wide application prospects especially in wearable electronic devices and health monitoring.

Pressure sensors with high sensitivity and large pressure range is crucial to their various applications in electronic engineering. Here, Wang et al. propose a new design based on a ternary nanocomposite material and show high pressure sensitivity of 680 kPa⁻¹ and fast response of 10 ms up to 150 kPa.

High performance IGZO-based phototransistors by BN/BP interface engineering

Some advances have been achieved in developing heterojunctions consisting of indium-gallium-zinc oxide (a-IGZO) films and two dimensional (2D) van der Waals materials for optoelectronic applications in recent years, however, the improvement of IGZO channel itself via constructing such heterojunctions is rarely reported. Here, we report the huge improvement in photoresponse performances for the IGZO phototransistor devices by introducing boron nitride (BN)/black phosphorus (BP) interface engineering. By creating an appropriate band bending and an efficient photo-generated carrier transfer path between IGZO and BP, the recombination of the photo-generated carriers in the IGZO channel is significantly suppressed. As a result, the corresponding photoresponsivity at a wavelength of 447 nm can be promoted from 0.05 A W^-1 to 0.3 A W^-1. A corresponding maximum external quantum efficiency of 83.4% was obtained for the BN/BP decorated IGZO phototransistor. The results imply that such interface engineering via 2D materials can be used as a general route to high performance oxide-semiconductor based optoelectronic devices.

Monolayer Janus Te2Se-based gas sensor to detect SO2 and NOx: a first-principles study

In this study, the adsorption of gas molecules, such as O₂, NH₃, CO, CO₂, H₂O, NO_x (x = 1, 2) and SO₂, on Janus Te₂Se monolayer has been investigated by means of density functional theory (DFT) calculations.

Large-Area Flexible Printed Thin-Film Transistors with Semiconducting Single-Walled Carbon Nanotubes for NO2 Sensors

Development of large-area, low-cost, low-voltage, low-power consumption, flexible high-performance printed carbon nanotube thin-film transistors (TFTs) is helpful to promote their future applications in sensors and biosensors, wearable electronics, and the Internet of things. In this work, low-voltage, flexible printed carbon nanotube TFTs with a large-area and low-cost fabrication process were successfully constructed using ultrathin (∼3.6 nm) AlO_x thin films formed by plasma oxidation of aluminum as dielectrics and screen-printed silver electrodes as contact electrodes. The as-prepared bottom-gate/bottom-contact carbon nanotube TFTs exhibit a low leakage current (∼10^-10 A), a high charge carrier mobility (up to 9.9 cm² V^-1 s^-1), high on/off ratios (higher than 10⁵), and small subthreshold swings (80-120 mV/dec) at low operation voltages (from -1.5 to 1 V). At the same time, printed carbon nanotube TFTs showed a high response (ΔR/R = 99.6%) to NO₂ gas even at 16 ppm with a faster response and recovery speed (∼8 s, exposure to 0.5 ppm NO₂), a lower detection limit (0.069 ppm NO₂), and a low power consumption (0.86 μW, exposure to 16 ppm NO₂) at a gate voltage of 0.2 V at room temperature. Moreover, the printed carbon nanotube devices exhibited excellent mechanical flexibility and bias stress stability after 12,000 bending cycles at a radius of 5 mm and a bias stress test for 7200 s at a gate voltage of ±1 V, which originated from the ultrathin and compact AlO_x dielectric and the super adhesion force between screen-printed silver electrodes and polyethylene terephthalate substrates.

Electrospun Yb-Doped In2O3 Nanofiber Field-Effect Transistors for Highly Sensitive Ethanol Sensors

Enhancing the reliability and sensitivity of gas sensors based on FETs has been of extensive concern for their practical application. However, few reports are available on nanofiber FET gas sensors fabricated by the electrospinning process. In this work, ethanol gas sensors based on Yb-doped In₂O₃ (InYbO) nanofiber FETs are fabricated by a simple and fast electrospinning method. The optimized In₂O₃ nanofiber FETs with a doping concentration of 4 mol % show a better electrical performance, including a high mobility of 6.67 cm²/Vs, an acceptable threshold voltage of 3.27 V, and a suitable on/off current ratio of 10⁷, especially the enhanced bias-stress stability. When employed in ethanol gas sensors, the gas sensors exhibit enhanced stability and improved sensitivity with a high response of 40-10 ppm, which is remarkably higher than that of previously reported ethanol gas sensors. Moreover, the InYbO nanofiber FET sensors also demonstrate a low limit of detection of 1 ppm and improved sensing performance ranging from sensitivity to the ability of selectivity. This work opens up a new prospect to achieve highly sensitive, selective, and reliable ethanol gas sensors using electrospun Yb-In₂O₃ nanofiber FETs with improved stability.

Sensing Behavior of Two Dimensional Al- and P-Doped WS2 Toward NO, NO2, and SO2: an Ab Initio Study

Two-dimensional transition metal dichalcogenides (2D TMDs), such as WS2, are considered to have the potential for high-performance gas sensors. It is a pity that the interaction between gases and pristine 2D WS2 as the sensitive element is too weak so that the sensor response is difficult to detect. Herein, the sensing capabilities of Al- and P-doped WS2 to NO, NO2, and SO2 were evaluated. Especially, we considered selectivity to target gases and dopant concentration. Molecular models of the adsorption systems were constructed, and density functional theory (DFT) was used to explore the adsorption behaviors of these gases from the perspective of binding energy, band structure, and density of states (DOS). The results suggested that doping atoms could increase the adsorption strength between gas molecules and substrate. Besides, the sensitivity of P-doped WS2 to NO and NO2 was hardly affected by CO2 or H2O. The sensitivity of Al-doped WS2 to NO2 and SO2 was also hard to be affected by CO2 or H2O. For NO detection, the WS2 with 7.4% dopant concentration had better sensitive properties than that with a 3.7% dopant concentration. While for SO2, the result was just the opposite. This work provided a comprehensive reference for choosing appropriate dopants (concentration) into 2D materials for sensing noxious gases.

N-Doped Graphene Quantum Dot-Decorated Three-Dimensional Ordered Macroporous In2O3 for NO2 Sensing at Low Temperatures

Nitrogen dioxide (NO₂) detection is of great importance because the emission of NO₂ gas profoundly endangers the natural environment and human health. However, a few challenges, including lowering detection limit, improving response/recovery kinetics, and reducing working temperature, should be further addressed before practical applications. Herein, a series of N-doped graphene quantum dot (N-GQD)-modified three-dimensional ordered macroporous (3DOM) In₂O₃ composites are constructed and their NO₂ response properties are studied. The results show that compared to pure 3DOM In₂O₃, reduced graphene oxide (rGO)/3DOM In₂O₃, and N-doped graphene sheets (NS)/3DOM In₂O₃, the N-GQDs/3DOM In₂O₃ sensing materials exhibit higher NO₂ responses with fast response and recovery speed and low working temperature (100 °C). In addition, the detection limit of NO₂ response for the optimal N-GQDs/In₂O₃ sensor is as low as 100 ppb. Upon exposure to CO, CH₄, NH₃, acetone, ethanol, toluene, and formaldehyde, only very weak responses could be observed, indicating good selectivity for the synthesized material. More attractively, the responses of the optimized N-GQDs/In₂O₃ sensor exhibit no obviously big fluctuation over 60 days, implying good long-term stability. We suggest that the formation of heterojunctions between 3DOM In₂O₃ and N-GQDs and the doping N atoms in N-GQDs play crucial roles in improving the NO₂ sensing properties.

Modulation of Binary Neuroplasticity in a Heterojunction-Based Ambipolar Transistor

To keep pace with the upcoming big-data era, the development of a device-level neuromorphic system with highly efficient computing paradigms is underway with numerous attempts. Synaptic transistors based on an all-solution processing method have received growing interest as building blocks for neuromorphic computing based on spikes. Here, we propose and experimentally demonstrated the dual operation mode in poly{2,2-(2,5-bis(2-octyldodecyl)-3,6-dioxo-2,3,5,6-tetrahydropyrrolo[3,4-c]pyrrole-1,4-diyl)dithieno[3,2-b]thiophene-5,5-diyl-alt-thiophen-2,5-diyl}(PDPPBTT)/ZnO junction-based synaptic transistor from ambipolar charge-trapping mechanism to analog the spiking interfere with synaptic plasticity. The heterojunction formed by PDPPBTT and ZnO layers serves as the basis for hole-enhancement and electron-enhancement modes of the synaptic transistor. Distinctive synaptic responses of paired-pulse facilitation (PPF) and paired-pulse depression (PPD) were configured to achieve the training/recognition function for digit image patterns at the device-to-system level. The experimental results indicate the potential application of the ambipolar transistor in future neuromorphic intelligent systems.