Key Role of Very Low Energy Electrons in Tin-Based Molecular Resists for Extreme Ultraviolet Nanolithography

Extreme Ultraviolet Photoresponse of Organotin-Based Photoresists with Borate Counteranions

Organometallic tin-oxo-hydroxo cage compounds offer a promising photoresist platform for extreme ultraviolet photolithography (EUVL). Their reactivity is dominated by the facile breaking of the tin-carbon bonds upon photon or electron irradiation. As the cage is dicationic, it exists as a complex with anions for charge compensation. In the present work, we explore the n-butyltin-oxo cage with two tetrakis(pentafluorophenyl)borate counteranions (TinPFPB). In contrast to the small counterions that are typically used, the bulky PFPB anion absorbs a substantial fraction (∼30%) of the impinging EUV radiation (13.5 nm, 92 eV), and it has its own reactivity upon photoionization. When thin films of the complex are irradiated with EUV radiation at low doses, a positive-tone development is possible, which is rather unique as all other known tin-oxo cage resists show a negative tone (cross-linking) behavior. We propose that the initial positive tone behavior is a result of the chemical modification of the Sn cluster by fragments of the borate anions. For comparison, we include the tetrakis(p-tolyl)borate anion (TB) in the study, which has similar bulkiness, and its complex with the n-butyltin-oxo cage (TinTB) shows the usual negative tone EUV resist behavior. This negative-tone behavior for our control experiment rules out a hypothesis based purely on the steric hindrance of the anion as the cause of the different EUV reactivity.

Advanced lithography materials: From fundamentals to applications

The semiconductor industry has long been driven by advances in a nanofabrication technology known as lithography, and the fabrication of nanostructures on chips relies on an important coating, the photoresist layer. Photoresists are typically spin-coated to form a film and have a photolysis solubility transition and etch resistance that allow for rapid fabrication of nanostructures. As a result, photoresists have attracted great interest in both fundamental research and industrial applications. Currently, the semiconductor industry has entered the era of extreme ultraviolet lithography (EUVL) and expects photoresists to be able to fabricate sub-10 nm structures. In order to realize sub-10 nm nanofabrication, the development of photoresists faces several challenges in terms of sensitivity, etch resistance, and molecular size. In this paper, three types of lithographic mechanisms are reviewed to provide strategies for designing photoresists that can enable high-resolution nanofabrication. The discussion of the current state of the art in optical lithography is presented in depth. Practical applications of photoresists and related recent advances are summarized. Finally, the current achievements and remaining issues of photoresists are discussed and future research directions are envisioned.

Experimental and Theoretical Study on Electron Ionization and Fragmentation of Propylene Oxide─the First Chiral Molecule Detected in the Interstellar Medium

Propylene oxide, CH3CHOCH2, is the first chiral molecule detected in space and the third C3 oxide detected toward the Sagittarius B2 (Sgr B2 (N)) molecular cloud, the others being propanal, CH3CH2CHO, and acetone, (CH3)2CO. With homochirality being ubiquitous in the building blocks of living matter, the formation and decay paths of propylene oxide in space are of specific interest. Motivated by the significant role of photo- and secondary electrons in astrochemistry, we have studied electron ionization and fragmentation of propylene oxide. Ion appearance energies are determined and compared to threshold values for the respective processes calculated at the G4MP2 level of theory, and potential reaction pathways are computed at the DFT level of theory. Electron ionization is found to destabilize propylene oxide, leading to barrierless opening of the C1-C2 bond of the epoxy ring, hydrogen transfer, and fragmentation over the methyl vinyl ether or rupture of the C2-O bond of the epoxy ring and fragmentation of the allyl alcohol cation as an intermediate, rather than direct bond ruptures.

Recent Advances in Positive Photoresists: Mechanisms and Fabrication

Photoresists are fundamental materials in photolithography and are crucial for precise patterning in microelectronic devices, MEMS, and nanostructures. This paper provides an in-depth review of recent advancements in positive photoresist research and development, focusing on discussion regarding the underlying mechanisms governing their behavior, exploring innovative fabrication techniques, and highlighting the advantages of the photoresist classes discussed. The paper begins by discussing the need for the development of new photoresist technologies, highlighting issues associated with adopting extreme ultraviolet photolithography and addressing these challenges through the development of advanced positive-tone resist materials with improved patterning features, resolution, and sensitivity. Subsequently, it discusses the working mechanisms and synthesis methods of different types and subtypes of photoresists, starting from non-chemically amplified, organic, and inorganic-organic hybrid photoresists and progressing to dry film resists, with an emphasis on the upsides of each. The paper concludes by discussing how future research in the field of lithography-prioritizing concerns related to environmental impacts, improved photoresist material and properties, and utilization of advanced quantum technology-can assist with revolutionizing lithography techniques.

XUV Absorption Spectroscopy and Photoconversion of a Tin-Oxo Cage Photoresist

Extreme ultraviolet lithography has recently been introduced in high-volume production of integrated circuits for manufacturing the smallest features in high-end computer chips. Hybrid organic/inorganic materials are considered as the next generation of photoresists for this technology, but detailed knowledge about the response of such materials to the ionizing radiation used (13.5 nm, 92 eV) is still scarce. In the present work, we use broadband high-harmonic radiation in the energy range 22-70 eV for absorption spectroscopy and photobleaching (that is, the decrease of absorbance) of thin films of an n-butyltin oxo-cage, a representative of the class of metal-based EUV photoresist. The shape of the absorption spectrum in the range 22-92 eV matches well with the spectrum predicted using tabulated atomic cross sections. The photobleaching results are consistent with loss of the butyl side groups due to the breaking of Sn-C bonds following photoionization. Bleaching is strongest in the low-energy range (<40 eV), where the absorption is largely due to the carbon atoms in the organic groups. At higher energies (42-70 eV), absorption is dominated by the tin atoms, and since these remain in the film after photoconversion, the absorption change in this region is smaller. It is estimated that after prolonged irradiation (up to ∼3 J cm-2 in the range 22-40 eV) about 70% of the hydrocarbon groups are removed from the film. The rate of bleaching is high at the beginning of exposure, but it rapidly decreases with increasing conversion. We rationalize this using density functional theory calculations: the first Sn-C bonds are efficiently cleaved (quantum yield Φ ≈ 0.9), because the highest occupied molecular orbitals (HOMOs) (from which an electron is removed after photoionization) are located on Sn-C sigma bonds. In the photoproducts, the HOMO is localized on tin atoms that have lost their hydrocarbon group (formally reduced to the Sn(II) oxidation state), and holes formed on those tin atoms lead to less efficient cleavage reactions. Our results reveal the primary reaction steps following excitation with ionizing radiation of tin-oxo cages. Our methodology represents a systematic approach of studying and quantitatively assessing the performance of new photoresists and as such enables the development of future EUV photoresists.

Soft X-ray absorption and fragmentation of tin-oxo cage photoresists

"Tin-oxo cage" organometallic compounds are considered as photoresists for extreme ultraviolet (EUV) photolithography. To gain insight into their electronic structure and reactivity to ionizing radiation, we trapped bare gas-phase n-butyltin-oxo cage dications [(BuSn)12O14(OH)6]2+ in an ion trap and investigated their fragmentation upon soft X-ray photoabsorption by means of mass spectrometry. In complementary experiments, the tin-oxo cages with hydroxide and trifluoroacetate counter-anions were cast in thin films and studied using X-ray transmission spectroscopy. Quantum-chemical calculations were used to interpret the observed spectra. At the carbon K-edge, a distinct pre-edge absorption band can be attributed to transitions in which electrons are promoted from C1s orbitals to the lowest unoccupied molecular orbitals, which are delocalized orbitals with strong antibonding (Sn-C σ*) character. At higher energies, the most prominent resonant transitions involve C-C and C-H σ* valence states and Rydberg (3s and 3p) states. In the solid state, the onset of continuum ionization is shifted by ∼5 eV to lower energy with respect to the gas phase, due to the electrostatic effect of the counterions. The O K-edge also shows a pre-edge absorption, but it is devoid of any specific features, because there are many transitions from the different O1s orbitals to a large number of vacant orbitals. In the gas phase, formation of the parent [(BuSn)12O14(OH)6]3+ radical ion is not observed at the C K-edge nor at the O K-edge, because the loss of a butyl group from this species is very efficient. We do observe a number of triply charged photofragment ions, some of which have lost up to 5 butyl groups. Structures of these species are proposed based on quantum-chemical calculations, and pathways of formation are discussed. Our results provide insight into the electronic structure of alkyltin-oxo cages, which is a prerequisite for understanding their response to EUV photons and their performance as EUV photoresists.

Role of Low-Energy (<20 eV) Secondary Electrons in the Extraterrestrial Synthesis of Prebiotic Molecules

We demonstrate for the first time that Galactic cosmic rays with energies as high as ∼1010 eV can trigger a cascade of low-energy (<20 eV) secondary electrons that could be a significant contributor to the interstellar synthesis of prebiotic molecules whose delivery by comets, meteorites, and interplanetary dust particles may have kick-started life on Earth. For the energetic processing of interstellar ice mantles inside dark, dense molecular clouds, we explore the relative importance of low-energy (<20 eV) secondary electrons-agents of radiation chemistry-and low-energy (<10 eV), nonionizing photons-instigators of photochemistry. Our calculations indicate fluxes of ∼102 electrons cm-2 s-1 for low-energy secondary electrons produced within interstellar ices due to attenuated Galactic cosmic-ray protons. Consequently, in certain star-forming regions where internal high-energy radiation sources produce ionization rates that are observed to be a thousand times greater than the typical interstellar Galactic ionization rate, the flux of low-energy secondary electrons should far exceed that of nonionizing photons. Because reaction cross sections can be several orders of magnitude larger for electrons than for photons, even in the absence of such enhancement, our calculations indicate that secondary low-energy (<20 eV) electrons are at least as significant as low-energy (<10 eV) nonionizing photons in the interstellar synthesis of prebiotic molecules. Most importantly, our results demonstrate the pressing need for explicitly incorporating low-energy electrons in current and future astrochemical simulations of cosmic ices. Such models are critically important for interpreting James Webb Space Telescope infrared measurements, which are currently being used to probe the origins of life by studying complex organic molecules found in ices near star-forming regions.

Highly hydroxylated hafnium clusters are accessible to high resolution EUV photoresists under small energy doses

This work reports the success in accessing high-resolution negative-tone EUV photoresists without radical chain growth in the aggregation mechanism. The synthesis of a highly hydroxylated Hf6O4(OH)8(RCO2)8 cluster 3 (R = s-butyl or s-Bu) is described; its EUV performance enables high resolution patterns HP = 18 nm under only 30 mJ cm-2. This photoresist also achieves high resolution patterns for e-beam lithography. Our new photoresist design to increase hydroxide substitutions of carboxylate ligands in the Hf6O4(OH)4(RCO2)12 clusters improves the EUV resolution and also greatly reduces EUV doses. Mechanistic analysis indicates that EUV light not only enables photolytic decomposition of carboxylate ligands, but also enhances the Hf-OH dehydration. One additional advantage of cluster 3 is a very small loss of film thickness (ca. 13%) after the EUV pattern development.

Surface charge dynamics on air-exposed ferroelectric Pb(Zr,Ti)O3(001) thin films

Probing of the free surface ferroelectric properties of thin polar films can be achieved either by estimating the band bending variance under the top-most layer or by studying the extent of the extrinsic charge accumulated outside the surface. Photoemitted or incoming low-energy electrons can be used to characterize locally both properties in a spectromicroscopic approach. Thin ferroelectric lead zirco-titanate (PZT) is investigated by combining low energy/mirror electron microscopy (LEEM/MEM) with photoemission electron microscopy (PEEM) and high-resolution photoelectron spectroscopy (XPS). Significant extrinsic negative compensation charge is proven to accumulate on the surface of the outward polarized thin film, indicated by high MEM-LEEM transition values, up to 15.3 eV, and is correlated with the surface electrostatic potential, which can be partially screened either by electrons interacting with the sample or by soft X-rays through the ejection of secondary electrons and generation of positive charge under the surface. A radiation-induced surface charge compensation effect is observed. The study indicates that air-exposed high quality ferroelectric thin films show large negative surface potentials, determined locally on the surface, which are nevertheless sensitive to beam damage and molecular desorption. These values represent a confirmation of previously estimated surface potential energy values determined from the LEED data on clean surfaces.

Novel hexameric tin carboxylate clusters as efficient negative-tone EUV photoresists: high resolution with well-defined patterns under low energy doses

Synthesis of two novel tin carboxylate clusters (RSn)₆(R'CO₂)₈O₄Cl₂ is described, and their structures have been characterized by X-ray diffraction. These clusters have irregular ladder geometry to form very smooth films with small surface roughness (RMS <0.7 nm) over a large domain. EUV lithography can be used to resolve half pitches (HPs) in the order of 15-16 nm with line width roughness (LWR = 4.5-6.0 nm) using small doses (20-90 mJ cm^-2). Cluster 1 (R = n-butyl; R'CO₂ = 2-methyl-3-butenoate) contains only a radical precursor and cluster 2 (R = vinyl, R'CO₂ = 2-methylbutyrate) bears both a radical precursor and an acceptor; the latter is much better than the former in EUV and e-beam photosensitivity. For these clusters, the mechanisms of EUV irradiation have been elucidated with high resolution X-ray photoelectron spectroscopy (HRXPS) and reflective Fourier-transform infrared spectroscopy (FTIR). At low EUV doses, two clusters undergo a Sn-Cl bond cleavage together with a typical decarboxylation to generate carbon radicals. The n-butyl groups of cluster 1 are prone to cleavage whereas the vinyl-Sn bonds of species 2 are inert toward EUV irradiation; participation of radical polymerization is evident for the latter.

Exceptional Light Sensitivity by Thiol-Ene Click Lithography

Lithographic patterning, which utilizes the solubility switch of photoresists to convert optical signals into nanostructures on the substrate, is the primary top-down approach for nanoscale fabrication. However, the low light/electron-energy conversion efficiency severely limits the throughput of lithography. Thiol-ene reaction, as a photoinitiated radical addition reaction, is widely known as click reaction in the field of chemistry due to its extremely high efficiency. Here, we introduce a click lithography strategy utilizing the rapid thiol-ene click reaction to realize ultraefficient nanofabrication. This novel approach facilitated by the implementation of ultrahigh-functionality material designs enables high-contrast patterning of metal-containing nanoclusters under an extremely low deep-ultraviolet exposure dose, e.g., 7.5 mJ cm^-2, which is 10-20 times lower than the dose used in the photoacid generator-based photoresist system. Meanwhile, 45 nm dense patterns were also achieved at a low dose using electron beam lithography, revealing the great potential of this approach in high-resolution patterning. Our results demonstrated the high-sensitivity and high-resolution features of click lithography, providing inspiration for future lithography design.

Evolution in Lithography Techniques: Microlithography to Nanolithography

In this era, electronic devices such as mobile phones, computers, laptops, sensors, and many more have become a necessity in healthcare, for a pleasant lifestyle, and for carrying out tasks quickly and easily. Different types of temperature sensors, biosensors, photosensors, etc., have been developed to meet the necessities of people. All these devices have chips inside them fabricated using diodes, transistors, logic gates, and ICs. The patterning of the substrate which is used for the further development of these devices is done with the help of a technique known as lithography. In the present work, we have carried out a review on different types of lithographic techniques such as optical lithography, extreme ultraviolet lithography, electron beam lithography, X-ray lithography, and ion beam lithography. The evolution of these techniques with time and their application in device fabrication are discussed. The different exposure tools developed in the past decade to enhance the resolution of these devices are also discussed. Chemically amplified and non-chemically amplified resists with their bonding and thickness are discussed. Mask and maskless lithography techniques are discussed along with their merits and demerits. Device fabrication at micro and nano scale has been discussed. Advancements that can be made to improve the performance of these techniques are also suggested.

Triethanolamine stabilized non-alkyl Sn4Cd4 and alkyl Sn2Cd12 oxo clusters with distinct electrocatalytic activities

Two unprecedented Sn/Cd-oxo clusters, including non-alkyltin Sn^II₂Sn^IV₂Cd₄ and alkyltin Sn^IV₂Cd₁₂, have been constructed using triethanolamine and inorganic or organic tin precursors, respectively. Comparative electrocatalytic CO₂ reduction experiments show that the presence of non-alkyl and variable-valent tin centres could greatly improve the catalytic activities.

Nb2O5, LiNbO3, and (Na, K)NbO3 Thin Films from High-Concentration Aqueous Nb-Polyoxometalates

Synthesizing functional materials from water contributes to a sustainable energy future. On the atomic level, water drives complex metal hydrolysis/condensation/speciation, acid-base, ion pairing, and solvation reactions that ultimately direct material assembly pathways. Here, we demonstrate the importance of Nb-polyoxometalate (Nb-POM) speciation in enabling deposition of Nb₂O₅, LiNbO₃, and (Na, K)NbO₃ (KNN) from high-concentration solutions, up to 2.5 M Nb for Nb₂O₅ and ∼1 M Nb for LiNbO₃ and KNN. Deposition of KNN from 1 M Nb concentration represents a potentially important advancment in lead-free piezoelectrics, an application that requires thick films. Solution characterization via small-angle X-ray scattering and Raman spectroscopy described the speciation for all precursor solutions as the [H_xNb₂₄O₇₂]^(x-24) POM, as did total pair distribution function analyses of X-ray scattering of amorphous gels prior to conversion to oxides. The tendency of the Nb₂₄-POM to form extended networks without crystallization leads to conformal and well-adhered films. The films were characterized by X-ray diffraction, atomic force microscopy, scanning electron microscopy, ellipsometry, and X-ray photoelectron spectroscopy. As a strategy to convert aqueous deposition solutions from {Nb₁₀}-POMs to {Nb₂₄}-POMs, we devised a general procedure to produce doped Nb₂O₅ thin films including Ca, Ag, and Cu doping.

Mechanistic Advantages of Organotin Molecular EUV Photoresists

Extreme ultraviolet (EUV)-induced radiation exposure chemistry in organotin-oxo systems, represented by the archetypal [(R-Sn)₁₂O₁₄(OH)₆](A)₂ cage, has been investigated with density functional theory. Upholding existing experimental evidence of Sn-C cleavage-dominant chemistry, computations have revealed that either electron attachment or ionization can single-handedly trigger tin-carbon bond cleavage, partially explaining the current EUV sensitivity advantage of metal oxide systems. We have revealed that tin atoms at different parts of the molecule react differently to ionization and electron attachment and have identified such selectivity as a result of local coordination chemistry instead of the macro geometry of the molecule. An ionization-deprotonation pathway has also been identified to explain the observed evolution of an anion conjugate acid upon exposure and anion mass dependence in resist sensitivity.

Low-Energy Electron Irradiation Damage in Few-Monolayer Pentacene Films

Crystalline films of pentacene molecules, two to four monolayers in thickness, are grown via in situ sublimation on silicon substrates in the ultrahigh vacuum chamber of a low-energy electron microscope. It is observed that the diffraction pattern of the pentacene layers fades upon irradiation with low-energy electrons. The damage cross section is found to increase by more than an order of magnitude for electron energies from 0 to 10 eV and by another order of magnitude from 10 to 40 eV. Close to 0 eV, damage is virtually nil. Creation of chemically reactive atomic centers after electron attachment or impact ionization is thought to trigger chemical reactions between neighboring molecules that gradually transform the layer into a disordered carbon nanomembrane. Additionally, diminishing spectroscopic features related to the unoccupied band structure of the layers, accompanied by loss of definition in real-space images, and an increase in the background intensity of diffraction images during irradiation point to chemical changes and formation of a disordered layer.

Molecular bixbyite-like In12-oxo clusters with tunable functionalization sites for lithography patterning applications

Indium oxides have been widely applied in many technological areas, but their utilization in lithography has not been developed. Herein, we illustrated a family of unprecedented In₁₂-oxo clusters with a general formula [In₁₂(μ₄-O)₄(μ₂-OH)₂(OCH₂CH₂NHCH₂CH₂O)₈(OR)₄X₄]X₂ (where X = Cl or Br; R = CH₃, C₆H₄NO₂ or C₆H₄F), which not only present the largest size record in the family of indium-oxo clusters (InOCs), but also feature the first molecular model of bixbyite-type In₂O₃. Moreover, through the labile coordination sites of the robust diethanolamine-stabilized In₁₂-oxo core, these InOCs can be accurately functionalized with different halides and alcohol or phenol derivatives, producing tunable solubility. Based on the high solution stability as confirmed by ESI-MS analysis, homogeneous films can be fabricated using these In₁₂-oxo clusters by the spin-coating method, which can be further used for electron beam lithography (EBL) patterning studies. Accordingly, the above structural regulations have significantly influenced their corresponding film quality and patterning performance, with bromide or p-nitrophenol functionalized In₁₂-oxo clusters displaying better performance of sub-50 nm lines. Thus, the here developed bixbyite-type In₁₂-oxo cluster starts the research on indium-based patterning materials and provides a new platform for future lithography radiation mechanism studies.

Bixbyite-like In₁₂-oxo clusters with labile coordination sites show tunable solubility, varying film quality and distinct lithography patterning performance.

UV and VUV-induced fragmentation of tin-oxo cage ions

Photoresist materials are being optimized for the recently introduced Extreme Ultraviolet (EUV) photolithographic technology. Organometallic compounds are potential candidates for replacing the ubiquitous polymer-based chemically amplified resists. Tin (Sn) has a particularly large absorption cross section for EUV light (13.5 nm, 92 eV), which could lead to a lower required EUV dose for achieving the desired solubility change (improved sensitivity). However, the fundamental interaction between organometallic materials and higher energy photons is poorly understood. In this work, we exposed n-butyltin-oxo cage dications (M2+) in the gas phase to photons in the energy range 4-35 eV to explore their fundamental photoreactivity. Photoproducts were detected using mass spectrometry. Homolytic cleavage of tin-carbon bonds was observed for all photon energies above the onset of electronic absorption at ∼5 eV (∼250 nm), leading to photoproducts which have lost one or more of the attached butyl groups (Bu). Above 12 eV (<103 nm), dissociative photoionization occurred for the dication (M2+), competing with the neutral loss channels. The photoionization threshold is lowered by approximately 2 eV when one counterion (triflate, OTf- or tosylate, OTs-) is attached to the tin-oxo cage (MOTf+ and MOTs+). This threshold is expected to be even lower if each tin-oxo cage is attached to two counterions, as is the case in a solid film of tin-oxo cages. Addition of counterions also affected the fragmentation pathways; photoexcitation of (MX)+ (X = counterion, OTf or OTs) always led to formation of (MX-2Bu)+ rather than (MX-Bu)+. MOTs+ was much more reactive than MOTf+ in terms of reaction products per absorbed photon. A possible explanation for this is proposed, which involves the counterion reacting with the initially formed tin-based radical.

Macrocyclic Inorganic Tin-Containing Oxo Clusters: Heterometallic Strategy for Configuration and Catalytic Activity Modulation

In this work, the first examples of inorganic macrocyclic tin-oxo clusters which are stabilized by sulfate ligands are reported. As determined by X-ray diffraction and photoelectron spectroscopy analyses, the prepared inorganic Sn₁₀ -oxo cluster displays interesting mixed valence behaviors, with 8 Sn⁴⁺ located at the cyclic skeleton and two Sn²⁺ encapsulated in the center. When further introducing Ti⁴⁺ and In³⁺ ions to the synthetic systems, heterometallic Sn₂ Ti₆ and SnIn₅ Ti₆ complexes with Ti₆ (SO₄ )₉ and SnIn₅ (SO₄ )₁₂ macrocyclic skeletons were prepared whose configuration and packing models were affected by the ionic radius of incorporated metals. Moreover, comparative CO₂ reduction experiments confirm that such heterometallic composition can significantly improve the catalytic activities of these inorganic macrocyclic oxo clusters. This work represents a milestone in constructing inorganic tin complexes and also macrocyclic metal oxo clusters with tunable configurations and properties.

Role of low-energy electrons in the solubility switch of Zn-based oxocluster photoresist for extreme ultraviolet lithography

The electron-induced chemistry of a resist material for extreme ultraviolet lithography (EUVL) consisting of Zn oxoclusters with methacrylate (MA) and trifluoroacetate (TFA) ligands (Zn(MA)(TFA)) has been studied. Electron energies of 80 eV and 20 eV mimic the effect of photoelectrons released by the absorption of EUV photons and low-energy secondary electrons (LESEs) produced by those photoelectrons. The chemical conversion of the resist is studied by mass spectrometry to monitor the volatile species that desorb during electron irradiation, combined with reflection absorption infrared spectra (RAIRS) measured before and after irradiation. The observed reactions are closely related to those initiated upon EUV absorption. Also, the conversion of the Zn(MA)(TFA) resist layer that is required in EUVL is achieved by a similar energy input upon electron irradiation. The dominant component of the desorbing gas is CO2, but CO detection also suggests Zn oxide formation during electron irradiation. In contrast, species deriving from the ligand side chains predominantly remain within the resist layer. RAIRS gives direct evidence that, during electron irradiation, C[double bond, length as m-dash]C bonds of the MA ligands are more rapidly consumed than the carboxylate groups. This supports that chain reactions occur and contribute to the solubility switch in the resist in EUVL. Remarkably, 20 eV electrons still evolve roughly 50% of the amount of the gas that is observed at 80 eV for the same electron dose. The present results thus provide complementary and new insight to the EUV-induced chemistry in the Zn(MA)(TFA) resist and point towards the important contribution of low-energy electrons therein.

Perfluoroalkylated alternating copolymer possessing solubility in fluorous liquids and imaging capabilities under high energy radiation

A highly fluorinated alternating polymer, P(RFMi-St), possessing improved thermal properties and patterning capabilities over perfluoroalkyl polymethacrylates under high energy radiation was achieved with semi-perfluorododecyl maleimide (RFMi) and styrene (St). RFMi could be synthesised efficiently via a Mitsunobu reaction condition and copolymerised with St by free radical and reversible-deactivation radical polymerisation protocols. P(RFMi-St) showed a satisfactory glass-transition temperature (108 °C) and intermolecular cross-linking behaviour under electron-beam and commercially more important extreme UV (λ = 13.5 nm) irradiation. The exposed regions lost their solubility, resulting in the successful formation of mechanically non-deteriorated negative-tone images down to 50 nm. In addition, P(RFMi-St) could be solution-processed with chemically non-damaging fluorous liquids, which enabled the polymer to be applied effectively on top of an organic semiconductor layer as a dielectric material (dielectric constant 2.7) for the organic field-effect transistor fabrication.

High Sensitivity Resists for EUV Lithography: A Review of Material Design Strategies and Performance Results

The need for decreasing semiconductor device critical dimensions at feature sizes below the 20 nm resolution limit has led the semiconductor industry to adopt extreme ultra violet (EUV) lithography with exposure at 13.5 nm as the main next generation lithographic technology. The broad consensus on this direction has triggered a dramatic increase of interest on resist materials of high sensitivity especially designed for use in the EUV spectral region in order to meet the strict requirements needed for overcoming the source brightness issues and securing the cost efficiency of the technology. To this direction both fundamental studies on the radiation induced chemistry in this spectral area and a plethora of new ideas targeting at the design of new highly sensitive and top performing resists have been proposed. Besides the traditional areas of acid-catalyzed chemically amplified resists and the resists based on polymer backbone breaking new unconventional ideas have been proposed based on the insertion of metal compounds or compounds of other highly absorbing at EUV atoms in the resist formulations. These last developments are reviewed here. Since the effort targets to a new understanding of electron-induced chemical reactions that dominate the resist performance in this region these last developments may lead to unprecedented changes in lithographic technology but can also strongly affect other scientific areas where electron-induced chemistry plays a critical role.