1
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Zhu L. Switching of Perpendicular Magnetization by Spin-Orbit Torque. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2300853. [PMID: 37004142 DOI: 10.1002/adma.202300853] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/28/2023] [Revised: 03/16/2023] [Indexed: 06/19/2023]
Abstract
Magnetic materials with strong perpendicular magnetic anisotropy are of great interest for the development of nonvolatile magnetic memory and computing technologies due to their high stabilities at the nanoscale. However, electrical switching of such perpendicular magnetization in an energy-efficient, deterministic, scalable manner has remained a big challenge. This problem has recently attracted enormous efforts in the field of spintronics. Here, recent advances and challenges in the understanding of the electrical generation of spin currents, the switching mechanisms and the switching strategies of perpendicular magnetization, the switching current density by spin-orbit torque of transverse spins, the choice of perpendicular magnetic materials are reviewed, and the progress in prototype perpendicular SOT memory and logic devices toward the goal of energy-efficient, dense, fast perpendicular spin-orbit torque applications is summarized.
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Affiliation(s)
- Lijun Zhu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
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2
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Wang H, Wu H, Zhang J, Liu Y, Chen D, Pandey C, Yin J, Wei D, Lei N, Shi S, Lu H, Li P, Fert A, Wang KL, Nie T, Zhao W. Room temperature energy-efficient spin-orbit torque switching in two-dimensional van der Waals Fe 3GeTe 2 induced by topological insulators. Nat Commun 2023; 14:5173. [PMID: 37620355 PMCID: PMC10449904 DOI: 10.1038/s41467-023-40714-y] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/16/2022] [Accepted: 08/07/2023] [Indexed: 08/26/2023] Open
Abstract
Two-dimensional (2D) ferromagnetic materials with unique magnetic properties have great potential for next-generation spintronic devices with high flexibility, easy controllability, and high heretointegrability. However, realizing magnetic switching with low power consumption at room temperature is challenging. Here, we demonstrate the room-temperature spin-orbit torque (SOT) driven magnetization switching in an all-van der Waals (vdW) heterostructure using an optimized epitaxial growth approach. The topological insulator Bi2Te3 not only raises the Curie temperature of Fe3GeTe2 (FGT) through interfacial exchange coupling but also works as a spin current source allowing the FGT to switch at a low current density of ~2.2×106 A/cm2. The SOT efficiency is ~2.69, measured at room temperature. The temperature and thickness-dependent SOT efficiency prove that the larger SOT in our system mainly originates from the nontrivial topological origin of the heterostructure. Our experiments enable an all-vdW SOT structure and provides a solid foundation for the implementation of room-temperature all-vdW spintronic devices in the future.
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Affiliation(s)
- Haiyu Wang
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, China
- Shenyuan Honors College, Beihang University, Beijing, China
| | - Hao Wu
- Department of Electrical and Computer Engineering, and Department of Physics and Astronomy, University of California, Los Angeles, CA, USA
| | - Jie Zhang
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, China
| | - Yingjie Liu
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, China
| | - Dongdong Chen
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, China
| | - Chandan Pandey
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, China
| | - Jialiang Yin
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, China
| | - Dahai Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, China
| | - Na Lei
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, China
| | - Shuyuan Shi
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, China
| | - Haichang Lu
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, China
| | - Peng Li
- Department of Electrical and Computer Engineering, Auburn University, Auburn, Alabama, USA
| | - Albert Fert
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, China
- Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, University of Paris-Saclay, Palaiseau, France
| | - Kang L Wang
- Department of Electrical and Computer Engineering, and Department of Physics and Astronomy, University of California, Los Angeles, CA, USA
| | - Tianxiao Nie
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, China.
| | - Weisheng Zhao
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, China.
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3
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Cao C, Chen S, Cui B, Yu G, Jiang C, Yang Z, Qiu X, Shang T, Xu Y, Zhan Q. Efficient Tuning of the Spin-Orbit Torque via the Magnetic Phase Transition of FeRh. ACS NANO 2022; 16:12727-12737. [PMID: 35943059 DOI: 10.1021/acsnano.2c04488] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The understanding and control of the spin-orbit torque (SOT) are central to antiferromagnetic spintronics. Despite the fact that a giant SOT efficiency has been achieved in numerous materials, its efficient tuning in a given material has not been established. Materials with magnetic phase transitions (MPTs) offer a new perspective, as the SOT efficiency may vary significantly for the different magnetic orderings across the transition, and the transition itself can be readily tuned by various control parameters. This work reports that the SOT efficiency of a FeRh-based perpendicular magnetized heterostructure can be significantly tuned by varying the temperature across the MPT. The SOT efficiency exhibits a temperature hysteresis associated with the first-order nature of the MPT, and its value in the ferromagnetic phase is seen to be enhanced by ∼450%, simply by a lowering of temperature to drive FeRh into the antiferromagnetic phase. Furthermore, current-induced magnetization switching can be achieved without an assistant magnetic field for both ferromagnetic and antiferromagnetic FeRh, with a low critical switching current density for the latter. These results not only directly establish FeRh as an efficient spin generator but also present a strategy to dynamically tune SOT via varying the temperature across MPTs.
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Affiliation(s)
- Cuimei Cao
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | - Shiwei Chen
- Shanghai Key Laboratory of Special Artificial Microstructure Materials, School of Physics Science and Engineering, Tongji University, Shanghai 200092, People's Republic of China
| | - Baoshan Cui
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People's Republic of China
- Beijing National Laboratory for Condensed Matter, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Guoqiang Yu
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People's Republic of China
- Beijing National Laboratory for Condensed Matter, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Changhuan Jiang
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | - Zhenzhong Yang
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | - Xuepeng Qiu
- Shanghai Key Laboratory of Special Artificial Microstructure Materials, School of Physics Science and Engineering, Tongji University, Shanghai 200092, People's Republic of China
| | - Tian Shang
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | - Yang Xu
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | - Qingfeng Zhan
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
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4
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Bhattacharjee N, Mahalingam K, Fedorko A, Lauter V, Matzelle M, Singh B, Grutter A, Will-Cole A, Page M, McConney M, Markiewicz R, Bansil A, Heiman D, Sun NX. Topological Antiferromagnetic Van der Waals Phase in Topological Insulator/Ferromagnet Heterostructures Synthesized by a CMOS-Compatible Sputtering Technique. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108790. [PMID: 35132680 DOI: 10.1002/adma.202108790] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/01/2021] [Revised: 01/30/2022] [Indexed: 06/14/2023]
Abstract
Breaking time-reversal symmetry by introducing magnetic order, thereby opening a gap in the topological surface state bands, is essential for realizing useful topological properties such as the quantum anomalous Hall and axion insulator states. In this work, a novel topological antiferromagnetic (AFM) phase is created at the interface of a sputtered, c-axis-oriented, topological insulator/ferromagnet heterostructure-Bi2 Te3 /Ni80 Fe20 because of diffusion of Ni in Bi2 Te3 (Ni-Bi2 Te3 ). The AFM property of the Ni-Bi2 Te3 interfacial layer is established by observation of spontaneous exchange bias in the magnetic hysteresis loop and compensated moments in the depth profile of the magnetization using polarized neutron reflectometry. Analysis of the structural and chemical properties of the Ni-Bi2 Te3 layer is carried out using selected-area electron diffraction, electron energy loss spectroscopy, and X-ray photoelectron spectroscopy. These studies, in parallel with first-principles calculations, indicate a solid-state chemical reaction that leads to the formation of Ni-Te bonds and the presence of topological antiferromagnetic (AFM) compound NiBi2 Te4 in the Ni-Bi2 Te3 interface layer. The Neél temperature of the Ni-Bi2 Te3 layer is ≈63 K, which is higher than that of typical magnetic topological insulators (MTIs). The presented results provide a pathway toward industrial complementary metal-oxide-semiconductor (CMOS)-process-compatible sputtered-MTI heterostructures, leading to novel materials for topological quantum devices.
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Affiliation(s)
- Nirjhar Bhattacharjee
- Northeastern University, Department of Electrical and Computer Engineering, Boston, MA, 02115, USA
| | - Krishnamurthy Mahalingam
- Air Force Research Laboratory, Nano-electronic Materials Branch, Wright Patterson Air Force Base, Boston, OH, 05433, USA
| | - Adrian Fedorko
- Northeastern University, Department of Physics, Boston, MA, 02115, USA
| | - Valeria Lauter
- Quantum Condensed Matter Division, Neutron Sciences Directorate, Oak Ridge National Laboratory, Boston, TN, 37831, USA
| | - Matthew Matzelle
- Northeastern University, Department of Physics, Boston, MA, 02115, USA
| | - Bahadur Singh
- Tata Institute of Fundamental Research, Department of Condensed Matter Physics and Materials Science, Mumbai, 400005, India
| | - Alexander Grutter
- NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA
| | - Alexandria Will-Cole
- Northeastern University, Department of Electrical and Computer Engineering, Boston, MA, 02115, USA
| | - Michael Page
- Air Force Research Laboratory, Nano-electronic Materials Branch, Wright Patterson Air Force Base, Boston, OH, 05433, USA
| | - Michael McConney
- Air Force Research Laboratory, Nano-electronic Materials Branch, Wright Patterson Air Force Base, Boston, OH, 05433, USA
| | - Robert Markiewicz
- Northeastern University, Department of Physics, Boston, MA, 02115, USA
| | - Arun Bansil
- Northeastern University, Department of Physics, Boston, MA, 02115, USA
| | - Don Heiman
- Northeastern University, Department of Physics, Boston, MA, 02115, USA
- Plasma Science and Fusion Center, MIT, Cambridge, MA, 02139, USA
| | - Nian Xiang Sun
- Northeastern University, Department of Electrical and Computer Engineering, Boston, MA, 02115, USA
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5
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Efficient spin current source using a half-Heusler alloy topological semimetal with back end of line compatibility. Sci Rep 2022; 12:2426. [PMID: 35165335 PMCID: PMC8844406 DOI: 10.1038/s41598-022-06325-1] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/25/2021] [Accepted: 01/27/2022] [Indexed: 11/16/2022] Open
Abstract
Topological materials, such as topological insulators (TIs), have great potential for ultralow power spintronic devices, thanks to their giant spin Hall effect. However, the giant spin Hall angle (θSH > 1) is limited to a few chalcogenide TIs with toxic elements and low melting points, making them challenging for device integration during the silicon Back-End-of-Line (BEOL) process. Here, we show that by using a half-Heusler alloy topological semi-metal (HHA-TSM), YPtBi, it is possible to achieve both a giant θSH up to 4.1 and a high thermal budget up to 600 °C. We demonstrate magnetization switching of a CoPt thin film using the giant spin Hall effect of YPtBi by current densities lower than those of heavy metals by one order of magnitude. Since HHA-TSM includes a group of three-element topological materials with great flexibility, our work opens the door to the third-generation spin Hall materials with both high θSH and high compatibility with the BEOL process that would be easily adopted by the industry.
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6
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Tang W, Liu H, Li Z, Pan A, Zeng Y. Spin-Orbit Torque in Van der Waals-Layered Materials and Heterostructures. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2100847. [PMID: 34323390 PMCID: PMC8456225 DOI: 10.1002/advs.202100847] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/02/2021] [Revised: 06/03/2021] [Indexed: 06/13/2023]
Abstract
Spin-orbit torque (SOT) opens an efficient and versatile avenue for the electrical manipulation of magnetization in spintronic devices. The enhancement of SOT efficiency and reduction of power consumption are key points for the implementation of high-performance SOT devices, which strongly rely on the spin-orbit coupling (SOC) strength and magnetic properties of ferromagnetic/non-magnetic heterostructures. Recently, van der Waals-layered materials have shown appealing properties for use in efficient SOT applications. On the one hand, transition-metal dichalcogenides, topological insulators, and graphene-based heterostructures possess appreciable SOC strength. This feature can efficiently converse the charge current into spin current and result in large SOT. On the other hand, the newly discovered layered magnetic materials provide ultra-thin and gate-tunable ferromagnetic candidates for high-performance SOT devices. In this review, the latest advancements of SOT research in various layered materials are summarized. First, a brief introduction of SOT is given. Second, SOT studies of various layered materials and heterostructures are summarized. Subsequently, progresses on SOT-induced magnetization switching are presented. Finally, current challenges and prospects for future development are suggested.
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Affiliation(s)
- Wei Tang
- Key laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
| | - Haoliang Liu
- State Key Laboratory on Tunable Laser TechnologyMinistry of Industry and Information Technology Key Lab of Micro‐Nano Optoelectronic Information SystemSchool of ScienceHarbin Institute of TechnologyShenzhen518055China
| | - Zhe Li
- State Key Laboratory on Tunable Laser TechnologyMinistry of Industry and Information Technology Key Lab of Micro‐Nano Optoelectronic Information SystemSchool of ScienceHarbin Institute of TechnologyShenzhen518055China
| | - Anlian Pan
- Key Laboratory for Micro‐Nano Physics and Technology of Hunan ProvinceCollege of Materials Science and EngineeringHunan UniversityChangsha410082China
| | - Yu‐Jia Zeng
- Key laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China
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7
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Wang M, Wang Z, Wang C, Zhao W. Field-Free Deterministic Magnetization Switching Induced by Interlaced Spin-Orbit Torques. ACS APPLIED MATERIALS & INTERFACES 2021; 13:20763-20769. [PMID: 33886280 DOI: 10.1021/acsami.0c23127] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Spin-orbit torque (SOT) magnetic random access memory is envisioned as an emerging nonvolatile memory due to its ultrahigh speed and low power consumption. The field-free switching scheme in SOT devices is of great interest to both academia and industry. Here, we propose a novel field-free deterministic magnetization switching scheme in a regular magnetic tunnel junction by using two currents sequentially passing interlaced paths, with less requirements of the manufacturing process or additional physical effects. The switching is bipolar since the final magnetization state depends on the combination of current paths. The functionality and robustness of the proposed scheme are validated through both macrospin and micromagnetic simulation. The influences of field-like torque and the Dzyaloshinskii-Moriya interaction effect are further researched. Our proposed scheme shows good scalability and is expected to realize novel digital logic and even computing-in-memory platforms.
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Affiliation(s)
- Min Wang
- Fert Beijing Research Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
| | - Zhaohao Wang
- Fert Beijing Research Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
| | - Chao Wang
- School of Electronics and Information Engineering, Beihang University, Beijing 100191, China
| | - Weisheng Zhao
- Fert Beijing Research Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
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8
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Peng CW, Liao WB, Chen TY, Pai CF. Efficient Spin-Orbit Torque Generation in Semiconducting WTe 2 with Hopping Transport. ACS APPLIED MATERIALS & INTERFACES 2021; 13:15950-15957. [PMID: 33769782 DOI: 10.1021/acsami.1c03530] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Spin-orbit torques (SOTs) from transition metal dichalcogenide systems (TMDs) in conjunction with ferromagnetic materials are recently found to be attractive in spintronics for their versatile features. However, most of the previously studied crystalline TMDs are prepared by mechanical exfoliation, which limits their potentials for industrial applications. Here, we show that amorphous WTe2 heterostructures deposited by magnetron sputtering possess a sizable damping-like SOT efficiency of ξDLWTe2 ≈ 0.20 and low damping constant of α = 0.009 ± 0.001. Only an extremely low critical switching current density of Jc≈ 7.05 × 109 A/m2 is required to achieve SOT-driven magnetization switching. The SOT efficiency is further proved to depend on the W and Te relative compositions in the co-sputtered W100-xTex samples, from which a sign change of ξDLWTe2 is observed. In addition, the electronic transport in amorphous WTe2 is found to be semiconducting and is governed by a hopping mechanism. With the above advantages and rich tunability, amorphous and semiconducting WTe2 serves as a unique SOT source for future spintronics applications.
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Affiliation(s)
- Cheng-Wei Peng
- Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Wei-Bang Liao
- Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Tian-Yue Chen
- Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Chi-Feng Pai
- Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
- Center of Atomic Initiative for New Materials, National Taiwan University, Taipei 10617, Taiwan
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9
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Shao Q, Li P, Liu L, Yang H, Fukami S, Razavi A, Wu H, Wang K, Freimuth F, Mokrousov Y, Stiles MD, Emori S, Hoffmann A, Åkerman J, Roy K, Wang JP, Yang SH, Garello K, Zhang W. Roadmap of spin-orbit torques. IEEE TRANSACTIONS ON MAGNETICS 2021; 57:10.48550/arXiv.2104.11459. [PMID: 37057056 PMCID: PMC10091395 DOI: 10.48550/arxiv.2104.11459] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin-orbit coupling, conduction electron spins and magnetization. More recently interest has grown to include a variety of other processes that include phonons, magnons, or heat. Over the past decade, many materials have been explored to achieve a larger SOT efficiency. Recently, holistic design to maximize the performance of SOT devices has extended material research from a nonmagnetic layer to a magnetic layer. The rapid development of SOT has spurred a variety of SOT-based applications. In this Roadmap paper, we first review the theories of SOTs by introducing the various mechanisms thought to generate or control SOTs, such as the spin Hall effect, the Rashba-Edelstein effect, the orbital Hall effect, thermal gradients, magnons, and strain effects. Then, we discuss the materials that enable these effects, including metals, metallic alloys, topological insulators, two-dimensional materials, and complex oxides. We also discuss the important roles in SOT devices of different types of magnetic layers, such as magnetic insulators, antiferromagnets, and ferrimagnets. Afterward, we discuss device applications utilizing SOTs. We discuss and compare three-terminal and two-terminal SOT-magnetoresistive random-access memories (MRAMs); we mention various schemes to eliminate the need for an external field. We provide technological application considerations for SOT-MRAM and give perspectives on SOT-based neuromorphic devices and circuits. In addition to SOT-MRAM, we present SOT-based spintronic terahertz generators, nano-oscillators, and domain wall and skyrmion racetrack memories. This paper aims to achieve a comprehensive review of SOT theory, materials, and applications, guiding future SOT development in both the academic and industrial sectors.
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Affiliation(s)
- Qiming Shao
- Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology
| | - Peng Li
- Department of Electrical and Computer Engineering, Auburn University
| | - Luqiao Liu
- Electrical Engineering and Computer Science, Massachusetts Institute of Technology
| | - Hyunsoo Yang
- Department of Electrical and Computer Engineering, National University of Singapore
| | - Shunsuke Fukami
- Research Institute of Electrical Communication, Tohoku University
| | - Armin Razavi
- Department of Electrical and Computer Engineering, University of California, Los Angeles
| | - Hao Wu
- Department of Electrical and Computer Engineering, University of California, Los Angeles
| | - Kang Wang
- Department of Electrical and Computer Engineering, University of California, Los Angeles
| | | | | | - Mark D Stiles
- Alternative Computing Group, National Institute of Standards and Technology
| | | | - Axel Hoffmann
- Department of Materials Science and Engineering, University of Illinois Urbana-Champaign
| | | | - Kaushik Roy
- Department of Electrical and Computer Engineering, Purdue University
| | - Jian-Ping Wang
- Electrical and Computer Engineering Department, University of Minnesota
| | | | - Kevin Garello
- IMEC, Leuven, Belgium; CEA-Spintec, Grenoble, France
| | - Wei Zhang
- Physics Department, Oakland University
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10
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Abstract
Science, engineering, and medicine ultimately demand fast information processing with ultra-low power consumption. The recently developed spin-orbit torque (SOT)-induced magnetization switching paradigm has been fueling opportunities for spin-orbitronic devices, i.e., enabling SOT memory and logic devices at sub-nano second and sub-picojoule regimes. Importantly, spin-orbitronic devices are intrinsic of nonvolatility, anti-radiation, unlimited endurance, excellent stability, and CMOS compatibility, toward emerging applications, e.g., processing in-memory, neuromorphic computing, probabilistic computing, and 3D magnetic random access memory. Nevertheless, the cutting-edge SOT-based devices and application remain at a premature stage owing to the lack of scalable methodology on the field-free SOT switching. Moreover, spin-orbitronics poises as an interdisciplinary field to be driven by goals of both fundamental discoveries and application innovations, to open fascinating new paths for basic research and new line of technologies. In this perspective, the specific challenges and opportunities are summarized to exert momentum on both research and eventual applications of spin-orbitronic devices.
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Affiliation(s)
- Yi Cao
- Beijing Academy of Quantum Information Sciences, Beijing 100193, P. R. China
| | - Guozhong Xing
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, P. R. China
| | - Huai Lin
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, P. R. China
| | - Nan Zhang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
| | - Houzhi Zheng
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
| | - Kaiyou Wang
- Beijing Academy of Quantum Information Sciences, Beijing 100193, P. R. China
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Corresponding author
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11
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Khang NHD, Nakano S, Shirokura T, Miyamoto Y, Hai PN. Ultralow power spin-orbit torque magnetization switching induced by a non-epitaxial topological insulator on Si substrates. Sci Rep 2020; 10:12185. [PMID: 32699260 PMCID: PMC7376042 DOI: 10.1038/s41598-020-69027-6] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/21/2020] [Accepted: 07/06/2020] [Indexed: 11/09/2022] Open
Abstract
The large spin Hall effect in topological insulators (TIs) is very attractive for ultralow-power spintronic devices. However, evaluation of the spin Hall angle and spin–orbit torque (SOT) of TIs is usually performed on high-quality single-crystalline TI thin films grown on dedicated III-V semiconductor substrates. Here, we report on room-temperature ultralow power SOT magnetization switching of a ferrimagnetic layer by non-epitaxial BiSb TI thin films deposited on Si/SiO2 substrates. We show that non-epitaxial BiSb thin films outperform heavy metals and other epitaxial TI thin films in terms of the effective spin Hall angle and switching current density by one to nearly two orders of magnitude. The critical SOT switching current density in BiSb is as low as 7 × 104 A/cm2 at room temperature. The robustness of BiSb against crystal defects demonstrate its potential applications to SOT-based spintronic devices.
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Affiliation(s)
- Nguyen Huynh Duy Khang
- Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo, 152-8550, Japan.,Department of Physics, Ho Chi Minh City University of Education, 280 An Duong Vuong Street, District 5, Ho Chi Minh City, 738242, Vietnam
| | - Soichiro Nakano
- Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo, 152-8550, Japan
| | - Takanori Shirokura
- Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo, 152-8550, Japan
| | - Yasuyoshi Miyamoto
- Science & Technology Research Labs., NHK (Japan Broadcasting Corporation), 1-10-11 Kinuta, Setagaya, Tokyo, 157-8510, Japan.,CREST, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama, 332-0012, Japan
| | - Pham Nam Hai
- Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo, 152-8550, Japan. .,CREST, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama, 332-0012, Japan. .,Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo, 113-8656, Japan.
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