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Pham T, Reidy K, Thomsen JD, Wang B, Deshmukh N, Filler MA, Ross FM. Salt-Assisted Vapor-Liquid-Solid Growth of 1D van der Waals Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2309360. [PMID: 38479025 DOI: 10.1002/adma.202309360] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/11/2023] [Revised: 11/27/2023] [Indexed: 03/20/2024]
Abstract
The method of salt-assisted vapor-liquid-solid (VLS) growth is introduced to synthesize 1D nanostructures of trichalcogenide van der Waals (vdW) materials, exemplified by niobium trisulfide (NbS3). The method uses a unique catalyst consisting of an alloy of Au and an alkali metal halide (NaCl) to enable rapid and directional growth. High yields of two types of NbS3 1D nanostructures, nanowires and nanoribbons, each with sub-ten nanometer diameter, tens of micrometers length, and distinct 1D morphology and growth orientation are demonstrated. Strategies to control the location, size, and morphology of growth, and extend the growth method to synthesize other transition metal trichalcogenides, NbSe3 and TiS3, as nanowires are demonstrated. Finally, the role of the Au-NaCl alloy catalyst in guiding VLS synthesis is described and the growth mechanism based on the relationships measured between structure (growth orientation, morphology, and dimensions) and growth conditions (catalyst volume and growth time) is discussed. These results introduce opportunities to expand the library of emerging 1D vdW materials to make use of their unique properties through controlled growth at nanoscale dimensions.
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Affiliation(s)
- Thang Pham
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Kate Reidy
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Joachim D Thomsen
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Baoming Wang
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Nishant Deshmukh
- School of Chemical and Biomolecular Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Michael A Filler
- School of Chemical and Biomolecular Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Frances M Ross
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
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Kim J, Lee J, Lee JM, Facchetti A, Marks TJ, Park SK. Recent Advances in Low-Dimensional Nanomaterials for Photodetectors. SMALL METHODS 2024; 8:e2300246. [PMID: 37203281 DOI: 10.1002/smtd.202300246] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/25/2023] [Revised: 04/21/2023] [Indexed: 05/20/2023]
Abstract
New emerging low-dimensional such as 0D, 1D, and 2D nanomaterials have attracted tremendous research interests in various fields of state-of-the-art electronics, optoelectronics, and photonic applications due to their unique structural features and associated electronic, mechanical, and optical properties as well as high-throughput fabrication for large-area and low-cost production and integration. Particularly, photodetectors which transform light to electrical signals are one of the key components in modern optical communication and developed imaging technologies for whole application spectrum in the daily lives, including X-rays and ultraviolet biomedical imaging, visible light camera, and infrared night vision and spectroscopy. Today, diverse photodetector technologies are growing in terms of functionality and performance beyond the conventional silicon semiconductor, and low-dimensional nanomaterials have been demonstrated as promising potential platforms. In this review, the current states of progress on the development of these nanomaterials and their applications in the field of photodetectors are summarized. From the elemental combination for material design and lattice structure to the essential investigations of hybrid device architectures, various devices and recent developments including wearable photodetectors and neuromorphic applications are fully introduced. Finally, the future perspectives and challenges of the low-dimensional nanomaterials based photodetectors are also discussed.
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Affiliation(s)
- Jaehyun Kim
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - Junho Lee
- Displays and Devices Research Lab. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06974, South Korea
| | - Jong-Min Lee
- Displays and Devices Research Lab. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06974, South Korea
| | - Antonio Facchetti
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - Tobin J Marks
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - Sung Kyu Park
- Displays and Devices Research Lab. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06974, South Korea
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Sutter P, Sutter E. Tunable 1D van der Waals Nanostructures by Vapor-Liquid-Solid Growth. Acc Chem Res 2023; 56:3235-3245. [PMID: 37938893 DOI: 10.1021/acs.accounts.3c00502] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2023]
Abstract
ConspectusVapor-liquid-solid (VLS) growth using molten metal catalysts has traditionally been used to synthesize nanowires from different 3D-crystalline semiconductors. With their anisotropic structure and properties, 2D/layered semiconductors create additional opportunities for materials design when shaped into 1D nanostructures. In contrast to hexagonal 2D crystals such as graphene, h-BN, and transition metal dichalcogenides, which tend to roll up into nanotubes, VLS growth of layered group III and group IV monochalcogenides produces diverse nanowire and nanoribbon morphologies that crystallize in a bulk-like layered structure with nanometer-scale footprint and lengths exceeding tens of micrometers. In this Account, we discuss the achievable morphologies, the mechanisms governing key structural features, and the emerging functional properties of these 1D van der Waals (vdW) architectures. Recent results highlight rich sets of phenomena that qualify these materials as a distinct class of nanostructures, far beyond a mere extension of 3D-crystalline VLS nanowires to vdW crystals.The main difference between 3D- and vdW crystals, the pronounced in-plane/cross-plane anisotropy of layered materials, motivates investigating the factors governing the layer orientation. Recent research suggests that the VLS catalyst plays a key role, and that its modification via the choice of chalcogens or through modifiers added to the growth precursor can switch both the nanostructure morphology and vdW layering. In many instances, ordinary layered structures are not formed but VLS growth is dominated by morphologies─often containing a crystal defect─that present reduced or vanishing layer nucleation barriers, thus achieving fast growth and emerging as the principal synthesis product. Prominent defect morphologies include vdW bicrystals growing by a twin-plane reentrant process and chiral nanowires formed by spiral growth around an axial screw dislocation. The latter carry particular promise, e.g., for twistronics. In vdW nanowires, Eshelby twist─a progressive crystal rotation caused by the dislocation stress field─translates into interlayer twist that is precisely tunable via the wire diameter. Projected onto a helicoid vdW interface, the resulting twist moirés not only modify the electronic structure but also realize configurations without equivalent in planar systems, such as continuously variable twist and twist homojunctions.1D vdW nanostructures derive distinct functionality from both their layered structure and embedded defects. Correlated electron microscopy methods including imaging, nanobeam diffraction, as well as electron-stimulated local absorption and luminescence spectroscopies combine to an exceptionally powerful probe of this emerging functionality, identifying twist-moiré induced electronic modulations and chiral photonic modes, demonstrating the benign nature of defects in optoelectronics, and uncovering ferroelectricity via symmetry-breaking by single-layer stacking faults in vdW nanowires. Far-reaching possibilities for tuning crystal structure, morphology, and defects create a rich playground for the discovery of new functional nanomaterials based on vdW crystals. Given the prominence of defects and extensive prospects for controlling their character and placement during synthesis, 1D vdW nanostructures have the potential to cause a paradigm shift in the science of electronic materials, replacing the traditional strategy of suppressing crystal imperfections with an alternative philosophy that embraces the use of individual defects with designed properties as drivers of technology.
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Affiliation(s)
- Peter Sutter
- Department of Electrical & Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
| | - Eli Sutter
- Department of Mechanical & Materials Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
- Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
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Sutter E, Komsa HP, Puretzky AA, Unocic RR, Sutter P. Stacking Fault Induced Symmetry Breaking in van der Waals Nanowires. ACS NANO 2022; 16:21199-21207. [PMID: 36413759 DOI: 10.1021/acsnano.2c09172] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
While traditional ferroelectrics are based on polar crystals in bulk or thin film form, two-dimensional and layered materials can support mechanisms for symmetry breaking between centrosymmetric building blocks, e.g., by creating low-symmetry interfaces in van der Waals stacks. Here, we introduce an approach toward symmetry breaking in van der Waals crystals that relies on the spontaneous incorporation of stacking faults in a nonpolar bulk layer sequence. The concept is realized in nanowires consisting of Se-rich group IV monochalcogenide (GeSe1-xSx) alloys, obtained by vapor-liquid-solid growth. The single crystalline wires adopt a layered structure in which the nonpolar A-B bulk stacking along the nanowire axis is interrupted by single-layer stacking faults with local A-A' stacking. Density functional theory explains this behavior by a reduced stacking fault formation energy in GeSe (or Se-rich GeSe1-xSx alloys). Computations demonstrate that, similar to monochalcogenide monolayers, the inserted A-layers should show a spontaneous electric polarization with a switching barrier consistent with a Curie temperature above room temperature. Second-harmonic generation signals are consistent with a variable density of stacking faults along the wires. Our results point to possible routes for designing ferroelectrics via the layer stacking in van der Waals crystals.
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Affiliation(s)
- Eli Sutter
- Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska68588, United States
- Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska68588, United States
| | - Hannu-Pekka Komsa
- Faculty of Information Technology and Electrical Engineering, University of Oulu, FI-90014, Oulu, Finland
| | - Alexander A Puretzky
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee37830, United States
| | - Raymond R Unocic
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee37830, United States
| | - Peter Sutter
- Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska68588, United States
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Ahmed S, Cheng PK, Qiao J, Gao W, Saleque AM, Al Subri Ivan MN, Wang T, Alam TI, Hani SU, Guo ZL, Yu SF, Tsang YH. Nonlinear Optical Activities in Two-Dimensional Gallium Sulfide: A Comprehensive Study. ACS NANO 2022; 16:12390-12402. [PMID: 35876327 DOI: 10.1021/acsnano.2c03566] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The nonlinear optical (NLO) properties of two-dimensional (2D) materials are fascinating for fundamental physics and optoelectronic device development. However, relatively few investigations have been conducted to establish the combined NLO activities of a 2D material. Herein, a study of numerous NLO properties of 2D gallium sulfide (GaS), including second-harmonic generation (SHG), two-photon excited fluorescence (TPEF), and NLO absorption are presented. The layer-dependent SHG response of 2D GaS identifies the noncentrosymmetric nature of the odd layers, and the second-order susceptibility (χ2) value of 47.98 pm/V (three-layers of GaS) indicates the superior efficiency of the SHG signal. In addition, structural deformation induces the symmetry breaking and facilitates the SHG in the bulk samples, whereas a possible efficient symmetry breaking in the liquid-phase exfoliated samples results in an enhancement of the SHG signal, providing prospective fields of investigation for researchers. The generation of TPEF from 800 to 860 nm depicts the two-photon absorption characteristics of 2D GaS material. Moreover, the saturable absorption characteristics of 2D GaS are realized from the largest nonlinear absorption coefficient (β) of -9.3 × 103, -91.0 × 103, and -6.05 × 103 cm/GW and giant modulation depths (Ts) of 24.4%, 35.3%, and 29.1% at three different wavelengths of 800, 1066, and 1560 nm, respectively. Hence, such NLO activities indicate that 2D GaS material can facilitate in the technical advancements of future nonlinear optoelectronic devices.
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Affiliation(s)
- Safayet Ahmed
- Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong
- Shenzhen Research Institute, The Hong Kong Polytechnic University, 518057 Shenzhen, Guangdong, People's Republic of China
| | - Ping Kwong Cheng
- Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong
- Shenzhen Research Institute, The Hong Kong Polytechnic University, 518057 Shenzhen, Guangdong, People's Republic of China
| | - Junpeng Qiao
- Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong
- School of Physics and Physical Engineering, Qufu Normal University, Qufu 273165, China
- Shandong Provincial Key Laboratory of Laser Polarization and Information Technology, Research Institute of Laser, Qufu Normal University, Qufu 273165, China
| | - Wei Gao
- Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong
- Shenzhen Research Institute, The Hong Kong Polytechnic University, 518057 Shenzhen, Guangdong, People's Republic of China
| | - Ahmed Mortuza Saleque
- Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong
- Shenzhen Research Institute, The Hong Kong Polytechnic University, 518057 Shenzhen, Guangdong, People's Republic of China
| | - Md Nahian Al Subri Ivan
- Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong
- Shenzhen Research Institute, The Hong Kong Polytechnic University, 518057 Shenzhen, Guangdong, People's Republic of China
| | - Ting Wang
- Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong
- College of Materials and Chemistry and Chemical Engineering, Chengdu University of Technology, Chengdu 610059, China
| | - Tawsif Ibne Alam
- Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong
- Shenzhen Research Institute, The Hong Kong Polytechnic University, 518057 Shenzhen, Guangdong, People's Republic of China
| | - Sumaiya Umme Hani
- Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong
- Shenzhen Research Institute, The Hong Kong Polytechnic University, 518057 Shenzhen, Guangdong, People's Republic of China
| | - Zong Liang Guo
- Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong
- Shenzhen Research Institute, The Hong Kong Polytechnic University, 518057 Shenzhen, Guangdong, People's Republic of China
| | - Siu Fung Yu
- Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong
- Shenzhen Research Institute, The Hong Kong Polytechnic University, 518057 Shenzhen, Guangdong, People's Republic of China
| | - Yuen Hong Tsang
- Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong
- Shenzhen Research Institute, The Hong Kong Polytechnic University, 518057 Shenzhen, Guangdong, People's Republic of China
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6
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Wu Q, Fang Z, Zhu Y, Song H, Liu Y, Su X, Pan D, Gao Y, Wang P, Yan S, Fei Z, Yao J, Shi Y. Controllable Edge Epitaxy of Helical GeSe/GeS Heterostructures. NANO LETTERS 2022; 22:5086-5093. [PMID: 35613359 DOI: 10.1021/acs.nanolett.2c00395] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Emerging twistronics based on van der Waals (vdWs) materials has attracted great interest in condensed matter physics. Recently, more neoteric three-dimensional (3D) architectures with interlayer twist are realized in germanium sulfide (GeS) crystals. Here, we further demonstrate a convenient way for tailoring the twist rate of helical GeS crystals via tuning of the growth temperature. Under higher growth temperatures, the twist angles between successive nanoplates of the GeS mesowires (MWs) are statistically smaller, which can be understood by the dynamics of the catalyst during the growth. Moreover, we fabricate self-assembled helical heterostructures by introducing germanium selenide (GeSe) onto helical GeS crystals via edge epitaxy. Besides the helical architecture, the moiré superlattices at the twisted interfaces are also inherited. Compared with GeS MWs, helical GeSe/GeS heterostructures exhibit improved electrical conductivity and photoresponse. These results manifest new opportunities in future electronics and optoelectronics by harnessing 3D twistronics based on vdWs materials.
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Affiliation(s)
- Qi Wu
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Zixuan Fang
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 611731, P. R. China
| | - Yuelei Zhu
- College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, P. R. China
| | - Haizeng Song
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Yin Liu
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, United States
| | - Xin Su
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Danfeng Pan
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
| | - Yuan Gao
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Peng Wang
- College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, P. R. China
| | - Shancheng Yan
- School of Geography and Biological Information, Nanjing University of Posts and Telecommunications, Nanjing 210023, P. R. China
| | - Zaiyao Fei
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
| | - Jie Yao
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, United States
| | - Yi Shi
- School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P. R. China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China
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Sutter E, French JS, Sutter P. Free-standing large, ultrathin germanium selenide van der Waals ribbons by combined vapor-liquid-solid growth and edge attachment. NANOSCALE 2022; 14:6195-6201. [PMID: 35393984 DOI: 10.1039/d2nr00397j] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Among group IV monochalcogenides, layered GeSe is of interest for its anisotropic properties, 1.3 eV direct band gap, ferroelectricity, high mobility, and excellent environmental stability. Electronic, optoelectronic and photovoltaic applications depend on the development of synthesis approaches that yield large quantities of crystalline flakes with controllable size and thickness. Here, we demonstrate the growth of single-crystalline GeSe nanoribbons by a vapor-liquid-solid process over Au catalyst on different substrates at low thermal budget. The nanoribbons crystallize in a layered structure, with ribbon axis along the armchair direction of the van der Waals layers. The ribbon morphology is determined by catalyst driven fast longitudinal growth accompanied by lateral expansion via edge-specific incorporation into the basal planes. This combined growth mechanism enables temperature controlled realization of ribbons with typical widths of up to 30 μm and lengths exceeding 100 μm, while maintaining sub-50 nm thickness. Nanoscale cathodoluminescence spectroscopy on individual GeSe nanoribbons demonstrates intense temperature-dependent band-edge emission up to room temperature, with fundamental bandgap and temperature coefficient of Eg(0) = 1.29 eV and α = 3.0 × 10-4 eV K-1, respectively, confirming high quality GeSe with low concentration of non-radiative recombination centers promising for optoelectronic applications including light emitters, photodetectors, and solar cells.
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Affiliation(s)
- Eli Sutter
- Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588, USA.
- Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE 68588, USA
| | - Jacob S French
- Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588, USA
| | - Peter Sutter
- Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588, USA
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Yang W, Xin K, Yang J, Xu Q, Shan C, Wei Z. 2D Ultrawide Bandgap Semiconductors: Odyssey and Challenges. SMALL METHODS 2022; 6:e2101348. [PMID: 35277948 DOI: 10.1002/smtd.202101348] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/18/2021] [Revised: 02/11/2022] [Indexed: 06/14/2023]
Abstract
2D ultrawide bandgap (UWBG) semiconductors have aroused increasing interest in the field of high-power transparent electronic devices, deep-ultraviolet photodetectors, flexible electronic skins, and energy-efficient displays, owing to their intriguing physical properties. Compared with dominant narrow bandgap semiconductor material families, 2D UWBG semiconductors are less investigated but stand out because of their propensity for high optical transparency, tunable electrical conductivity, high mobility, and ultrahigh gate dielectrics. At the current stage of research, the most intensively investigated 2D UWBG semiconductors are metal oxides, metal chalcogenides, metal halides, and metal nitrides. This paper provides an up-to-date review of recent research progress on new 2D UWBG semiconductor materials and novel physical properties. The widespread applications, i.e., transistors, photodetector, touch screen, and inverter are summarized, which employ 2D UWBG semiconductors as either a passive or active layer. Finally, the existing challenges and opportunities of the enticing class of 2D UWBG semiconductors are highlighted.
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Affiliation(s)
- Wen Yang
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450052, China
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Kaiyao Xin
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Juehan Yang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Qun Xu
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450052, China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key laboratory of Materials Physics, Ministry of Education, and School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
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Sutter E, Sutter P. Ultrathin Twisted Germanium Sulfide van der Waals Nanowires by Bismuth Catalyzed Vapor-Liquid-Solid Growth. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2104784. [PMID: 34655159 DOI: 10.1002/smll.202104784] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/10/2021] [Revised: 09/18/2021] [Indexed: 06/13/2023]
Abstract
1D nanowires of 2D layered crystals are emerging nanostructures synthesized by combining van der Waals (vdW) epitaxy and vapor-liquid-solid (VLS) growth. Nanowires of the group IV monochalcogenide germanium sulfide (GeS) are of particular interest for twistronics due to axial screw dislocations giving rise to Eshelby twist and precision interlayer twist at helical vdW interfaces. Ultrathin vdW nanowires have not been realized, and it is not clear if confining layered crystals into extremely thin wires is even possible. If axial screw dislocations are still stable, ultrathin vdW nanowires can reach large twists and should display significant quantum confinement. Here it is shown that VLS growth over Bi catalysts yields vdW nanowires down to ≈15 nm diameter while maintaining tens of µm length. Combined electron microscopy and diffraction demonstrate that ultrathin GeS nanowires crystallize in the orthorhombic bulk structure but can realize nonequilibrium stacking that may lead to 1D ferroelectricity. Ultrathin nanowires carry screw dislocations, remain chiral, and achieve very high twist rates. Whenever the dislocation extends to the nanowire tip, it continues into the Bi catalyst. Eshelby twist analysis demonstrates that the ultrathin nanowires follow continuum predictions. Cathodoluminescence on individual nanowires, finally, shows pronounced emission blue shifts consistent with quantum confinement.
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Affiliation(s)
- Eli Sutter
- Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE, 68588, USA
- Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE, 68588, USA
| | - Peter Sutter
- Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, NE, 68588, USA
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Bhalla N, Taneja S, Thakur P, Sharma PK, Mariotti D, Maddi C, Ivanova O, Petrov D, Sukhachev A, Edelman IS, Thakur A. Doping Independent Work Function and Stable Band Gap of Spinel Ferrites with Tunable Plasmonic and Magnetic Properties. NANO LETTERS 2021; 21:9780-9788. [PMID: 34735771 DOI: 10.1021/acs.nanolett.1c03767] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Tuning optical or magnetic properties of nanoparticles, by addition of impurities, for specific applications is usually achieved at the cost of band gap and work function reduction. Additionally, conventional strategies to develop nanoparticles with a large band gap also encounter problems of phase separation and poor crystallinity at high alloying degree. Addressing the aforementioned trade-offs, here we report Ni-Zn nanoferrites with energy band gap (Eg) of ≈3.20 eV and a work function of ≈5.88 eV. While changes in the magnetoplasmonic properties of the Ni-Zn ferrite were successfully achieved with the incorporation of bismuth ions at different concentrations, there was no alteration of the band gap and work function in the developed Ni-Zn ferrite. This suggests that with the addition of minute impurities to ferrites, independent of their changes in the band gap and work function, one can tune their magnetic and optical properties, which is desired in a wide range of applications such as nanobiosensing, nanoparticle based catalysis, and renewable energy generation using nanotechnology.
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Affiliation(s)
- Nikhil Bhalla
- Nanotechnology and Integrated Bioengineering Centre (NIBEC), School of Engineering, Ulster University, Shore Road, Jordanstown, BT37 0QB, Northern Ireland, United Kingdom
- Healthcare Technology Hub, Ulster University, Shore Road, Jordanstown, BT37 0QB, Northern Ireland, United Kingdom
| | - Shilpa Taneja
- Department of Physics, Amity University Haryana, Gurugram, Haryana 122413, India
| | - Preeti Thakur
- Department of Physics, Amity University Haryana, Gurugram, Haryana 122413, India
| | - Preetam Kumar Sharma
- Nanotechnology and Integrated Bioengineering Centre (NIBEC), School of Engineering, Ulster University, Shore Road, Jordanstown, BT37 0QB, Northern Ireland, United Kingdom
- Healthcare Technology Hub, Ulster University, Shore Road, Jordanstown, BT37 0QB, Northern Ireland, United Kingdom
- Department of Chemical Engineering, Loughborough University, Loughborough LE11 3TU, United Kingdom
| | - Davide Mariotti
- Nanotechnology and Integrated Bioengineering Centre (NIBEC), School of Engineering, Ulster University, Shore Road, Jordanstown, BT37 0QB, Northern Ireland, United Kingdom
| | - Chiranjeevi Maddi
- Nanotechnology and Integrated Bioengineering Centre (NIBEC), School of Engineering, Ulster University, Shore Road, Jordanstown, BT37 0QB, Northern Ireland, United Kingdom
| | - Oxana Ivanova
- L.V. Kirensky Institute of Physics, Siberian Branch of RAS, 660036 Krasnoyarsk, Russia
| | - Dmitry Petrov
- L.V. Kirensky Institute of Physics, Siberian Branch of RAS, 660036 Krasnoyarsk, Russia
| | - Alexander Sukhachev
- L.V. Kirensky Institute of Physics, Siberian Branch of RAS, 660036 Krasnoyarsk, Russia
| | - Irina S Edelman
- L.V. Kirensky Institute of Physics, Siberian Branch of RAS, 660036 Krasnoyarsk, Russia
| | - Atul Thakur
- Amity Institute of Nanotechnology, Amity University Haryana, Gurugram, Haryana 122413, India
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Sutter P, French JS, Khosravi Khorashad L, Argyropoulos C, Sutter E. Optoelectronics and Nanophotonics of Vapor-Liquid-Solid Grown GaSe van der Waals Nanoribbons. NANO LETTERS 2021; 21:4335-4342. [PMID: 33955765 DOI: 10.1021/acs.nanolett.1c00891] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
2D/layered semiconductors are of interest for fundamental studies and for applications in optoelectronics and photonics. Work to date focused on extended crystals, produced by exfoliation or growth and investigated by diffraction-limited spectroscopy. Processes such as vapor-liquid-solid (VLS) growth carry potential for mass-producing nanostructured van der Waals semiconductors with exceptionally high crystal quality and optoelectronic/photonic properties at least on par with those of extended flakes. Here, we demonstrate the synthesis, structure, morphology, and optoelectronics/photonics of GaSe van der Waals nanoribbons obtained by Au- and Ag-catalyzed VLS growth. Although all GaSe ribbons are high-quality basal-plane oriented single crystals, those grown at lower temperatures stand out with their remarkably uniform morphology and low edge roughness. Photoluminescence spectroscopy shows intense, narrow light emission at the GaSe bandgap energy. Nanophotonic experiments demonstrate traveling waveguide modes at visible/near-infrared energies and illustrate approaches for locally exciting and probing such photonic modes by cathodoluminescence in transmission electron microscopy.
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Affiliation(s)
- Peter Sutter
- Department of Electrical & Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
| | - Jacob S French
- Department of Electrical & Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
| | - Larousse Khosravi Khorashad
- Department of Electrical & Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
| | - Christos Argyropoulos
- Department of Electrical & Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
| | - Eli Sutter
- Department of Mechanical & Materials Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
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Orientation-Dependent Conversion of VLS-Grown Lead Iodide Nanowires into Organic-Inorganic Hybrid Perovskites. NANOMATERIALS 2021; 11:nano11010223. [PMID: 33467057 PMCID: PMC7830942 DOI: 10.3390/nano11010223] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/21/2020] [Revised: 01/13/2021] [Accepted: 01/14/2021] [Indexed: 11/17/2022]
Abstract
In this study, we demonstrate Sn-assisted vapor-liquid-solid (VLS) growth of lead iodide (PbI2) nanowires with van der Waals layered crystal structure and subsequent vapor-phase conversion into methylammonium lead iodide (CH3NH3PbI3) perovskites. Our systematic microscopic investigations confirmed that the VLS-grown PbI2 nanowires display two major growth orientations of [0001] and [1¯21¯0], corresponding to the stacking configurations of PbI2 layers to the nanowire axis (transverse for [0001] vs. parallel for [1¯21¯0]). The resulting difference in the sidewall morphologies was correlated with the perovskite conversion, where [0001] nanowires showed strong localized conversion at top and bottom, as opposed to [1¯21¯0] nanowires with an evenly distributed degree of conversion. An ab initio energy calculation suggests that CH3NH3I preferentially diffuses and intercalates into (112¯0) sidewall facets parallel to the [1¯21¯0] nanowire axis. Our results underscore the ability to control the crystal structures of van der Waals type PbI2 in nanowire via the VLS technique, which is critical for the subsequent conversion process into perovskite nanostructures and corresponding properties.
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Sutter P, Khorashad LK, Argyropoulos C, Sutter E. Cathodoluminescence of Ultrathin Twisted Ge 1- x Sn x S van der Waals Nanoribbon Waveguides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2006649. [PMID: 33283337 DOI: 10.1002/adma.202006649] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/30/2020] [Revised: 11/09/2020] [Indexed: 06/12/2023]
Abstract
Ultrathin van der Waals semiconductors have shown extraordinary optoelectronic and photonic properties. Propagating photonic modes make layered crystal waveguides attractive for photonic circuitry and for studying hybrid light-matter states. Accessing guided modes by conventional optics is challenging due to the limited spatial resolution and poor out-of-plane far-field coupling. Scanning near-field optical microscopy can overcome these issues and can characterize waveguide modes down to a resolution of tens of nanometers, albeit for planar samples or nanostructures with moderate height variations. Electron microscopy provides atomic-scale localization also for more complex geometries, and recent advances have extended the accessible excitations from interband transitions to phonons. Here, bottom-up synthesized layered semiconductor (Ge1- x Snx S) nanoribbons with an axial twist and deep subwavelength thickness are demonstrated as a platform for realizing waveguide modes, and cathodoluminescence spectroscopy is introduced as a tool to characterize them. Combined experiments and simulations show the excitation of guided modes by the electron beam and their efficient detection via photons emitted in the ribbon plane, which enables the measurement of key properties such as the evanescent field into the vacuum cladding with nanometer resolution. The results identify van der Waals waveguides operating in the infrared and highlight an electron-microscopy-based approach for probing complex-shaped nanophotonic structures.
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Affiliation(s)
- Peter Sutter
- Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, NE, 68588, USA
| | | | - Christos Argyropoulos
- Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, NE, 68588, USA
| | - Eli Sutter
- Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE, 68588, USA
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