1
|
Xiao Y, Zou G, Huo J, Sun T, Peng J, Li Z, Shen D, Liu L. Local modulation of Au/MoS 2 Schottky barriers using a top ZnO nanowire gate for high-performance photodetection. NANOSCALE HORIZONS 2024; 9:285-294. [PMID: 38063807 DOI: 10.1039/d3nh00448a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/30/2024]
Abstract
Schottky junctions are commonly used for fabricating heterojunction-based 2D transition metal dichalcogenide (TMD) photodetectors, characteristically offering a wide detection range, high sensitivity and fast response. However, these devices often suffer from reduced detectivity due to the high dark current, making it challenging to discover a simple and efficient universal way to improve the photoelectric performances. Here, we demonstrate a novel approach for integrating ZnO nanowire gates into a MoS2-Au Schottky junction to improve the photoelectric performances of photodetectors by locally controlling the Schottky barrier. This strategy remarkably reduces the dark current level of the device without affecting its photocurrent and the Schottky detectivity can be modified to a maximum detectivity of 1.4 × 1013 Jones with -20 V NG bias. This work provides potential possibilities for tuning the band structure of other materials and optimizing the performance of heterojunction photodetectors.
Collapse
Affiliation(s)
- Yu Xiao
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
| | - Guisheng Zou
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
| | - Jinpeng Huo
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
| | - Tianming Sun
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
- College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, Shanxi Province, China
| | - Jin Peng
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
| | - Zehua Li
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
| | - Daozhi Shen
- School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Lei Liu
- Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University, Beijing 100084, P. R. China.
| |
Collapse
|
2
|
Ding EX, Liu P, Yoon HH, Ahmed F, Du M, Shafi AM, Mehmood N, Kauppinen EI, Sun Z, Lipsanen H. Highly Sensitive MoS 2 Photodetectors Enabled with a Dry-Transferred Transparent Carbon Nanotube Electrode. ACS APPLIED MATERIALS & INTERFACES 2023; 15:4216-4225. [PMID: 36635093 PMCID: PMC9880956 DOI: 10.1021/acsami.2c19917] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/05/2022] [Accepted: 01/05/2023] [Indexed: 06/17/2023]
Abstract
Fabricating electronic and optoelectronic devices by transferring pre-deposited metal electrodes has attracted considerable attention, owing to the improved device performance. However, the pre-deposited metal electrode typically involves complex fabrication procedures. Here, we introduce our facile electrode fabrication process which is free of lithography, lift-off, and reactive ion etching by directly press-transferring a single-walled carbon nanotube (SWCNT) film. We fabricated Schottky diodes for photodetector applications using dry-transferred SWCNT films as the transparent electrode to increase light absorption in photoactive MoS2 channels. The MoS2 flake vertically stacked with an SWCNT electrode can exhibit excellent photodetection performance with a responsivity of ∼2.01 × 103 A/W and a detectivity of ∼3.2 × 1012 Jones. Additionally, we carried out temperature-dependent current-voltage measurement and Fowler-Nordheim (FN) plot analysis to explore the dominant charge transport mechanism. The enhanced photodetection in the vertical configuration is found to be attributed to the FN tunneling and internal photoemission of charge carriers excited from indium tin oxide across the MoS2 layer. Our study provides a novel concept of using a photoactive MoS2 layer as a tunneling layer itself with a dry-transferred transparent SWCNT electrode for high-performance and energy-efficient optoelectronic devices.
Collapse
Affiliation(s)
- Er-Xiong Ding
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
| | - Peng Liu
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
- Department
of Applied Physics, School of Science, Aalto
University, EspooFI-02150, Finland
| | - Hoon Hahn Yoon
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
| | - Faisal Ahmed
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
| | - Mingde Du
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
| | - Abde Mayeen Shafi
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
| | - Naveed Mehmood
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
| | - Esko I. Kauppinen
- Department
of Applied Physics, School of Science, Aalto
University, EspooFI-02150, Finland
| | - Zhipei Sun
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
| | - Harri Lipsanen
- Department
of Electronics and Nanoengineering, School of Electrical Engineering, Aalto University, EspooFI-02150, Finland
| |
Collapse
|
3
|
Wang H, Wang W, Zhong Y, Li D, Li Z, Xu X, Song X, Chen Y, Huang P, Mei A, Han H, Zhai T, Zhou X. Approaching the External Quantum Efficiency Limit in 2D Photovoltaic Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2206122. [PMID: 35953088 DOI: 10.1002/adma.202206122] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/05/2022] [Revised: 08/01/2022] [Indexed: 06/15/2023]
Abstract
2D transition metal dichalcogenides (TMDs) are promising candidates for realizing ultrathin and high-performance photovoltaic devices. However, the external quantum efficiency (EQE) and power conversion efficiency (PCE) of most 2D photovoltaic devices face great challenges in exceeding 50% and 3%, respectively, due to the low efficiency of photocarrier separation and collection. Here, this study demonstrates photovoltaic devices with defect-free interface and recombination-free channel based on 2D WS2 , showing high EQE of 92% approaching the theoretical limit and high PCE of 5.0%. The high performances are attributed to the van der Waals metal contact without interface defects and Fermi-level pinning, and the fully depleted channel without photocarrier recombination, leading to intrinsic photocarrier separation and collection with high efficiency. Furthermore, this study demonstrates that the strategy can be extended to other TMDs such as MoSe2 and WSe2 with EQE of 92% and 94%, respectively. This work proposes a universal strategy for building high-performance 2D photovoltaic devices. The nearly ideal EQE provides great potential for PCE approaching the Shockley-Queisser limit.
Collapse
Affiliation(s)
- Haoyun Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Wei Wang
- Michael Grätzel Center for Mesoscopic Solar Cells, Wuhan National Laboratory for Optoelectronics, Key Laboratory of Materials Chemistry for Energy Conversion and Storage of Ministry of Education, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yongle Zhong
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Dongyan Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Zexin Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Xiang Xu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Xingyu Song
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yunxin Chen
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Pu Huang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Anyi Mei
- Michael Grätzel Center for Mesoscopic Solar Cells, Wuhan National Laboratory for Optoelectronics, Key Laboratory of Materials Chemistry for Energy Conversion and Storage of Ministry of Education, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Hongwei Han
- Michael Grätzel Center for Mesoscopic Solar Cells, Wuhan National Laboratory for Optoelectronics, Key Laboratory of Materials Chemistry for Energy Conversion and Storage of Ministry of Education, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Xing Zhou
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| |
Collapse
|
4
|
Li X, Ruan S, Zhu H. SnS Nanoflakes/Graphene Hybrid: Towards Broadband Spectral Response and Fast Photoresponse. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:2777. [PMID: 36014642 PMCID: PMC9413584 DOI: 10.3390/nano12162777] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/14/2022] [Revised: 08/04/2022] [Accepted: 08/11/2022] [Indexed: 06/15/2023]
Abstract
High responsivity has been recently achieved in a graphene-based hybrid photogating mechanism photodetector using two-dimensional (2D) semiconductor nanosheets or quantum dots (QDs) sensitizers. However, there is a major challenge of obtaining photodetectors of fast photoresponse time and broad spectral photoresponse at room temperature due to the high trap density generated at the interface of nanostructure/graphene or the large band gap of QDs. The van der Waals interfacial coupling in small bandgap 2D/graphene heterostructures has enabled broadband photodetection. However, most of the photocarriers in the hybrid structure originate from the photoconductive effect, and it is still a challenge to achieve fast photodetection. Here, we directly grow SnS nanoflakes on graphene by the physical vapor deposition (PVD) method, which can avoid contamination between SnS absorbing layer and graphene and also ensures the high quality and low trap density of SnS. The results demonstrate the extended broad-spectrum photoresponse of the photodetector over a wide spectral range from 375 nm to 1550 nm. The broadband photodetecting mechanisms based on a photogating effect induced by the transferring of photo-induced carrier and photo-hot carrier are discussed in detail. More interestingly, the device also exhibits a large photoresponsivity of 41.3 AW-1 and a fast response time of around 19 ms at 1550 nm. This study reveals strategies for broadband response and sensitive photodetectors with SnS nanoflakes/graphene.
Collapse
Affiliation(s)
- Xiangyang Li
- College of Applied Technology, Shenzhen University, Shenzhen 518060, China
| | - Shuangchen Ruan
- College of New Energy and New Materials, Shenzhen Technology University, Shenzhen 518118, China
| | - Haiou Zhu
- College of New Energy and New Materials, Shenzhen Technology University, Shenzhen 518118, China
| |
Collapse
|
5
|
Mao J, Wu Z, Guo F, Hao J. Strain-Induced Performance Enhancement of a Monolayer Photodetector via Patterned Substrate Engineering. ACS APPLIED MATERIALS & INTERFACES 2022; 14:36052-36059. [PMID: 35912816 DOI: 10.1021/acsami.2c09632] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D) materials exhibit tremendous potential for applications in next-generation photodetectors. Currently, approaches aiming at enhancing the device's performance are limited, mainly relying on complex hybrid systems such as heterostructures and sensitization. Here, we propose a new strategy by constructing patterned nanostructures compatible with the conventional silicon substrate. Using CVD-grown monolayer MoS2 on the periodical nanocone arrays, we demonstrate a high-performance MoS2 photodetector via manipulating strain distribution engineered by the substrate at the nanoscale. Compared to the pristine MoS2 counterpart, the strained MoS2 photodetector exhibits a much enhanced performance, including a high signal-to-noise ratio over 105 and large responsivity of 3.2 × 104 A W-1. The physical mechanism responsible for the enhancement is discussed by combining Kelvin probe force microscopy with theoretical simulation. The enhanced performances can be attributed to the improved light absorption, the fast separation of photo-excited carriers, and the suppression of dark currents induced by the designed periodical nanocone arrays. This work depicts an alternative method to achieve high-performance optoelectronic devices based on 2D materials integrated with semiconductor circuits.
Collapse
Affiliation(s)
- Jianfeng Mao
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong 999077, P. R. China
| | - Zehan Wu
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong 999077, P. R. China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Feng Guo
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong 999077, P. R. China
| | - Jianhua Hao
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong 999077, P. R. China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, P. R. China
| |
Collapse
|
6
|
Feng YJ, Simbulan KB, Yang TH, Chen YR, Li KS, Chu CJ, Lu TH, Lan YW. Twisted Light-Induced Photocurrent in a Silicon Nanowire Field-Effect Transistor. ACS NANO 2022; 16:9297-9303. [PMID: 35713188 DOI: 10.1021/acsnano.2c01944] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Light can possess orbital angular momentum (OAM), in addition to spin angular momentum (SAM), which offers nearly infinite possible values of momentum states, allowing a wider degree of freedom for information processing and communications. The OAM of light induces a selection rule that obeys the law of conservation of angular momentum as it interacts with a material, affecting the material's optical and electrical properties. In this work, silicon nanowire field-effect transistors are subjected to light with OAM, also known as twisted light. Electrical measurements on the devices consequently reveal photocurrent enhancements after incrementing the OAM of the incident light from 0ℏ (fundamental mode) to 5ℏ. Such a phenomenon is attributed to the enhancements of the photogating and the photoconductive effects under the influence of the OAM of light, the underlying mechanism of which is proposed and discussed using energy band diagrams. With these observations, a strategy for controlling photocurrent has been introduced, which can be a realization of the application in the field of optoelectronics technology.
Collapse
Affiliation(s)
- Yi-Jie Feng
- Department of Physics, National Taiwan Normal University, Taipei 11677, Taiwan
| | - Kristan Bryan Simbulan
- Department of Physics, National Taiwan Normal University, Taipei 11677, Taiwan
- Department of Mathematics and Physics, University of Santo Tomas, Manila 1008, Philippines
| | - Tilo H Yang
- Department of Physics, National Taiwan Normal University, Taipei 11677, Taiwan
| | - Ye-Ru Chen
- Department of Physics, National Taiwan Normal University, Taipei 11677, Taiwan
| | - Kai-Shin Li
- Taiwan Semiconductor Research Institute, National Applied Research Laboratories, Hsinchu 30078, Taiwan
| | - Chia-Jung Chu
- Silicon Based Molecular Sensoring Technology CO., Ltd. (Molsentech), Taipei 11571, Taiwan
| | - Ting-Hua Lu
- Department of Physics, National Taiwan Normal University, Taipei 11677, Taiwan
| | - Yann-Wen Lan
- Department of Physics, National Taiwan Normal University, Taipei 11677, Taiwan
| |
Collapse
|
7
|
Dai C, Liu Y, Wei D. Two-Dimensional Field-Effect Transistor Sensors: The Road toward Commercialization. Chem Rev 2022; 122:10319-10392. [PMID: 35412802 DOI: 10.1021/acs.chemrev.1c00924] [Citation(s) in RCA: 57] [Impact Index Per Article: 28.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
The evolutionary success in information technology has been sustained by the rapid growth of sensor technology. Recently, advances in sensor technology have promoted the ambitious requirement to build intelligent systems that can be controlled by external stimuli along with independent operation, adaptivity, and low energy expenditure. Among various sensing techniques, field-effect transistors (FETs) with channels made of two-dimensional (2D) materials attract increasing attention for advantages such as label-free detection, fast response, easy operation, and capability of integration. With atomic thickness, 2D materials restrict the carrier flow within the material surface and expose it directly to the external environment, leading to efficient signal acquisition and conversion. This review summarizes the latest advances of 2D-materials-based FET (2D FET) sensors in a comprehensive manner that contains the material, operating principles, fabrication technologies, proof-of-concept applications, and prototypes. First, a brief description of the background and fundamentals is provided. The subsequent contents summarize physical, chemical, and biological 2D FET sensors and their applications. Then, we highlight the challenges of their commercialization and discuss corresponding solution techniques. The following section presents a systematic survey of recent progress in developing commercial prototypes. Lastly, we summarize the long-standing efforts and prospective future development of 2D FET-based sensing systems toward commercialization.
Collapse
Affiliation(s)
- Changhao Dai
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200433, China.,Laboratory of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
| | - Yunqi Liu
- Laboratory of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
| | - Dacheng Wei
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200433, China.,Laboratory of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
| |
Collapse
|
8
|
Chen K, Zhang X, Chen P, Guo J, He M, Chen Y, Qiu X, Liu Y, Chen H, Zeng Z, Wang X, Yuan J, Ma W, Liao L, Nguyen T, Hu Y. Solution-Processed CsPbBr 3 Quantum Dots/Organic Semiconductor Planar Heterojunctions for High-Performance Photodetectors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2105856. [PMID: 35229493 PMCID: PMC9036026 DOI: 10.1002/advs.202105856] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/16/2022] [Revised: 02/13/2022] [Indexed: 06/14/2023]
Abstract
Planar heterojunctions (PHJs) are fundamental building blocks for construction of semiconductor devices. However, fabricating PHJs with solution-processable semiconductors such as organic semiconductors (OSCs) is a challenge. Herein, utilizing the orthogonal solubility and good wettability between CsPbBr3 perovskite quantum dots (PQDs) and OSCs, fabrication of solution-processed PQD/OSC PHJs are reported. The phototransistors based on bilayer PQD/PDVT-10 PHJs show responsivity up to 1.64 × 104 A W-1 , specific detectivity of 3.17 × 1012 Jones, and photosensitivity of 5.33 × 106 when illuminated by 450 nm light. Such high photodetection performance is attributed to efficient charge dissociation and transport, as well as the photogating effect in the PHJs. Furthermore, the tri-layer PDVT-10/PQD/Y6 PHJs are used to construct photodiodes working in self-powered mode, which exhibit broad range photoresponse from ultraviolet to near-infrared, with responsivity approaching 10-1 A W-1 and detectivity over 106 Jones. These results present a convenient and scalable production processes for solution-processed PHJs and show their great potential for optoelectronic applications.
Collapse
Affiliation(s)
- Kaixuan Chen
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan ProvinceCollege of Semiconductors (College of Integrated Circuits)Hunan UniversityChangsha410082China
| | - Xuliang Zhang
- Institute of Functional Nano and Soft Materials (FUNSOM) Jiangsu Key Laboratory for Carbon‐Based Functional Materials and Devicesthe Collaborative Innovation Center of Suzhou Nano Science and TechnologySoochow UniversitySuzhou215123China
| | - Ping‐An Chen
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of EducationSchool of Physics and ElectronicsHunan UniversityChangsha410082China
| | - Jing Guo
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of EducationSchool of Physics and ElectronicsHunan UniversityChangsha410082China
| | - Mai He
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of EducationSchool of Physics and ElectronicsHunan UniversityChangsha410082China
| | - Yanqin Chen
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of EducationSchool of Physics and ElectronicsHunan UniversityChangsha410082China
| | - Xincan Qiu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of EducationSchool of Physics and ElectronicsHunan UniversityChangsha410082China
| | - Yu Liu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of EducationSchool of Physics and ElectronicsHunan UniversityChangsha410082China
| | - Huajie Chen
- Key Laboratory of Environmentally Friendly Chemistry and Applications of Ministry of EducationCollege of ChemistryXiangtan UniversityXiangtan411105China
| | - Zebing Zeng
- State Key Laboratory of Chemo/Biosensing and ChemometricsCollege of Chemistry and Chemical EngineeringHunan UniversityChangsha410082China
| | - Xiao Wang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of EducationSchool of Physics and ElectronicsHunan UniversityChangsha410082China
| | - Jianyu Yuan
- Institute of Functional Nano and Soft Materials (FUNSOM) Jiangsu Key Laboratory for Carbon‐Based Functional Materials and Devicesthe Collaborative Innovation Center of Suzhou Nano Science and TechnologySoochow UniversitySuzhou215123China
| | - Wanli Ma
- Institute of Functional Nano and Soft Materials (FUNSOM) Jiangsu Key Laboratory for Carbon‐Based Functional Materials and Devicesthe Collaborative Innovation Center of Suzhou Nano Science and TechnologySoochow UniversitySuzhou215123China
| | - Lei Liao
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan ProvinceCollege of Semiconductors (College of Integrated Circuits)Hunan UniversityChangsha410082China
| | - Thuc‐Quyen Nguyen
- Center for Polymers and Organic SolidsDepartment of Chemistry and BiochemistryUniversity of California at Santa BarbaraSanta BarbaraCA93106USA
| | - Yuanyuan Hu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan ProvinceCollege of Semiconductors (College of Integrated Circuits)Hunan UniversityChangsha410082China
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of EducationSchool of Physics and ElectronicsHunan UniversityChangsha410082China
- Shenzhen Research Institute of Hunan UniversityShenzhen518063China
| |
Collapse
|
9
|
Chakraborty SK, Kundu B, Nayak B, Dash SP, Sahoo PK. Challenges and opportunities in 2D heterostructures for electronic and optoelectronic devices. iScience 2022; 25:103942. [PMID: 35265814 PMCID: PMC8898921 DOI: 10.1016/j.isci.2022.103942] [Citation(s) in RCA: 17] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/25/2022] Open
|
10
|
Nur R, Tsuchiya T, Toprasertpong K, Terabe K, Takagi S, Takenaka M. A floating gate negative capacitance MoS 2 phototransistor with high photosensitivity. NANOSCALE 2022; 14:2013-2022. [PMID: 35072675 DOI: 10.1039/d1nr06315d] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Monolayer MoS2 exhibits interesting optoelectronic properties that have been utilized in applications such as photodetectors and light emitting diodes. For image sensing applications, improving the light sensitivity relies on achieving a low dark current that enables the detection weak light signals. Although previous reports on improving the detectivity have been explored with heterostructures and pn junction devices, some of these approaches lack CMOS compatibility processing and sufficient low dark current suppression. Steep slope transistors that overcome the Boltzmann tyranny can further enhance the performance in photodetectors by providing efficient extraction of photogenerated charges. Here, we report a monolayer MoS2 floating gate negative capacitance phototransistor with the integration of a hafnium-zirconium oxide ferroelectric capacitor. In this study, a SSmin of 30 mV dec-1, very low dark currents of 10-13-10-14 A, and a high detectivity of 7.2 × 1015 cm Hz1/2 W-1 were achieved under weak light illumination due to an enhancement in the photogating effect. In addition, its potential as an optical memory and as an optical synapse with excellent long-term potentiation characteristics in an artificial neural network was also explored. Overall, this device structure offers high photosensitivity to weak light signals for future low-powered optoelectronic applications.
Collapse
Affiliation(s)
- Roda Nur
- Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan.
| | - Takashi Tsuchiya
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science (NIMS), 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan
| | - Kasidit Toprasertpong
- Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan.
| | - Kazuya Terabe
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science (NIMS), 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan
| | - Shinichi Takagi
- Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan.
| | - Mitsuru Takenaka
- Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan.
| |
Collapse
|
11
|
Jia P, Wang L, Zhang Y, Yang Y, Jin X, Zhou M, Quan D, Jia M, Cao L, Long R, Jiang L, Guo W. Harnessing Ionic Power from Equilibrium Electrolyte Solution via Photoinduced Active Ion Transport through van-der-Waals-Like Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2007529. [PMID: 33656226 DOI: 10.1002/adma.202007529] [Citation(s) in RCA: 23] [Impact Index Per Article: 7.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/04/2020] [Revised: 01/15/2021] [Indexed: 06/12/2023]
Abstract
Nanofluidic ion transport through van der Waals heterostructures, composed of two or more types of reconstructed 2D nanomaterials, gives rise to fascinating opportunities for light-energy harvesting, due to coupling between the optoelectronic properties of the layered constituents and ion transport in between the atomic layers. Here, a photoinduced active ion transport phenomenon through transition metal dichalcogenides (TMDs)-based van-der-Waals-like multilayer heterostructures is reported for harnessing ionic power from equilibrium electrolyte solution. The binary heterostructure comprises sequentially stacked 2D-WS2 and 2D-MoS2 multilayers with sub-1 nm interlayer spacing. Upon visible-light illumination, a net ionic flow is initiated through the Janus membrane, suggesting a directional cationic transport from WS2 to MoS2 part. The transport mechanism is explained in terms of a photovoltaic effect due to type II band alignment of WS2 /MoS2 heterostructures. The driving mechanism can be generally applied to a variety of heterogeneous TMD membranes with type II semiconductor heterojunctions. In equilibrium ionic solutions, the maximum ionic photoresponse approaches ≈21 µA cm-2 and ≈45 mV under one sun equivalent excitation. Under optimized conditions, the harvested power density reaches 2 mW m-2 . The proof-of-concept demonstration of photonic-to-ionic power generation within angstrom-scale confinement anticipates potential for light-controlled ionic circuits, artificial photosynthesis, and biomimetic energy conversion.
Collapse
Affiliation(s)
- Pan Jia
- Hebei Key Laboratory of Inorganic Nanomaterials, College of Chemistry and Material Science, Hebei Normal University, Shijiazhuang, Hebei, 050024, P. R. China
- CAS Key Laboratory of Bio-Inspired Materials and Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Lili Wang
- CAS Key Laboratory of Bio-Inspired Materials and Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Yuhui Zhang
- CAS Key Laboratory of Bio-Inspired Materials and Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Yating Yang
- College of Chemistry, Key Laboratory of Theoretical and Computational Photochemistry of Ministry of Education, Beijing Normal University, Beijing, 100875, P. R. China
| | - Xiaoyan Jin
- CAS Key Laboratory of Bio-Inspired Materials and Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Min Zhou
- CAS Key Laboratory of Bio-Inspired Materials and Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Di Quan
- CAS Key Laboratory of Bio-Inspired Materials and Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Meijuan Jia
- CAS Key Laboratory of Bio-Inspired Materials and Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Liuxuan Cao
- College of Energy, Xiamen University, Xiamen, Fujian, 361005, P. R. China
| | - Run Long
- College of Chemistry, Key Laboratory of Theoretical and Computational Photochemistry of Ministry of Education, Beijing Normal University, Beijing, 100875, P. R. China
| | - Lei Jiang
- CAS Key Laboratory of Bio-Inspired Materials and Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Wei Guo
- CAS Key Laboratory of Bio-Inspired Materials and Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| |
Collapse
|
12
|
Sundararaju U, Mohammad Haniff MAS, Ker PJ, Menon PS. MoS 2/h-BN/Graphene Heterostructure and Plasmonic Effect for Self-Powering Photodetector: A Review. MATERIALS (BASEL, SWITZERLAND) 2021; 14:1672. [PMID: 33805402 PMCID: PMC8037851 DOI: 10.3390/ma14071672] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/30/2020] [Revised: 03/11/2021] [Accepted: 03/18/2021] [Indexed: 11/17/2022]
Abstract
A photodetector converts optical signals to detectable electrical signals. Lately, self-powered photodetectors have been widely studied because of their advantages in device miniaturization and low power consumption, which make them preferable in various applications, especially those related to green technology and flexible electronics. Since self-powered photodetectors do not have an external power supply at zero bias, it is important to ensure that the built-in potential in the device produces a sufficiently thick depletion region that efficiently sweeps the carriers across the junction, resulting in detectable electrical signals even at very low-optical power signals. Therefore, two-dimensional (2D) materials are explored as an alternative to silicon-based active regions in the photodetector. In addition, plasmonic effects coupled with self-powered photodetectors will further enhance light absorption and scattering, which contribute to the improvement of the device's photocurrent generation. Hence, this review focuses on the employment of 2D materials such as graphene and molybdenum disulfide (MoS2) with the insertion of hexagonal boron nitride (h-BN) and plasmonic nanoparticles. All these approaches have shown performance improvement of photodetectors for self-powering applications. A comprehensive analysis encompassing 2D material characterization, theoretical and numerical modelling, device physics, fabrication and characterization of photodetectors with graphene/MoS2 and graphene/h-BN/MoS2 heterostructures with plasmonic effect is presented with potential leads to new research opportunities.
Collapse
Affiliation(s)
- Umahwathy Sundararaju
- Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia (UKM), Bangi 43600, Malaysia; (U.S.); (M.A.S.M.H.)
| | | | - Pin Jern Ker
- Institute of Sustainable Energy (ISE), Universiti Tenaga Nasional (UNITEN), Kajang 43000, Malaysia;
| | - P. Susthitha Menon
- Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia (UKM), Bangi 43600, Malaysia; (U.S.); (M.A.S.M.H.)
| |
Collapse
|
13
|
Nalwa HS. A review of molybdenum disulfide (MoS 2) based photodetectors: from ultra-broadband, self-powered to flexible devices. RSC Adv 2020; 10:30529-30602. [PMID: 35516069 PMCID: PMC9056353 DOI: 10.1039/d0ra03183f] [Citation(s) in RCA: 47] [Impact Index Per Article: 11.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/09/2020] [Accepted: 07/17/2020] [Indexed: 12/23/2022] Open
Abstract
Two-dimensional transition metal dichalcogenides (2D TMDs) have attracted much attention in the field of optoelectronics due to their tunable bandgaps, strong interaction with light and tremendous capability for developing diverse van der Waals heterostructures (vdWHs) with other materials. Molybdenum disulfide (MoS2) atomic layers which exhibit high carrier mobility and optical transparency are very suitable for developing ultra-broadband photodetectors to be used from surveillance and healthcare to optical communication. This review provides a brief introduction to TMD-based photodetectors, exclusively focused on MoS2-based photodetectors. The current research advances show that the photoresponse of atomic layered MoS2 can be significantly improved by boosting its charge carrier mobility and incident light absorption via forming MoS2 based plasmonic nanostructures, halide perovskites-MoS2 heterostructures, 2D-0D MoS2/quantum dots (QDs) and 2D-2D MoS2 hybrid vdWHs, chemical doping, and surface functionalization of MoS2 atomic layers. By utilizing these different integration strategies, MoS2 hybrid heterostructure-based photodetectors exhibited remarkably high photoresponsivity raging from mA W-1 up to 1010 A W-1, detectivity from 107 to 1015 Jones and a photoresponse time from seconds (s) to nanoseconds (10-9 s), varying by several orders of magnitude from deep-ultraviolet (DUV) to the long-wavelength infrared (LWIR) region. The flexible photodetectors developed from MoS2-based hybrid heterostructures with graphene, carbon nanotubes (CNTs), TMDs, and ZnO are also discussed. In addition, strain-induced and self-powered MoS2 based photodetectors have also been summarized. The factors affecting the figure of merit of a very wide range of MoS2-based photodetectors have been analyzed in terms of their photoresponsivity, detectivity, response speed, and quantum efficiency along with their measurement wavelengths and incident laser power densities. Conclusions and the future direction are also outlined on the development of MoS2 and other 2D TMD-based photodetectors.
Collapse
Affiliation(s)
- Hari Singh Nalwa
- Advanced Technology Research 26650 The Old Road Valencia California 91381 USA
| |
Collapse
|