1
|
Gao B, Wang W, Meng Y, Du C, Long Y, Zhang Y, Shao H, Lai Z, Wang W, Xie P, Yip S, Zhong X, Ho JC. Electrical Polarity Modulation in V-Doped Monolayer WS 2 for Homogeneous CMOS Inverters. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2402217. [PMID: 38924273 DOI: 10.1002/smll.202402217] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/20/2024] [Revised: 05/14/2024] [Indexed: 06/28/2024]
Abstract
As demand for higher integration density and smaller devices grows, silicon-based complementary metal-oxide-semiconductor (CMOS) devices will soon reach their ultimate limits. 2D transition metal dichalcogenides (TMDs) semiconductors, known for excellent electrical performance and stable atomic structure, are seen as promising materials for future integrated circuits. However, controlled and reliable doping of 2D TMDs, a key step for creating homogeneous CMOS logic components, remains a challenge. In this study, a continuous electrical polarity modulation of monolayer WS2 from intrinsic n-type to ambipolar, then to p-type, and ultimately to a quasi-metallic state is achieved simply by introducing controllable amounts of vanadium (V) atoms into the WS2 lattice as p-type dopants during chemical vapor deposition (CVD). The achievement of purely p-type field-effect transistors (FETs) is particularly noteworthy based on the 4.7 at% V-doped monolayer WS2, demonstrating a remarkable on/off current ratio of 105. Expanding on this triumph, the first initial prototype of ultrathin homogeneous CMOS inverters based on monolayer WS2 is being constructed. These outcomes validate the feasibility of constructing homogeneous CMOS devices through the atomic doping process of 2D materials, marking a significant milestone for the future development of integrated circuits.
Collapse
Affiliation(s)
- Boxiang Gao
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Weijun Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - You Meng
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Congcong Du
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
- Qingyuan Innovation Laboratory, Quanzhou, 362801, China
| | - Yunchen Long
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Yuxuan Zhang
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - He Shao
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Zhengxun Lai
- College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
| | - Wei Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Pengshan Xie
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - SenPo Yip
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka, 816-8580, Japan
| | - Xiaoyan Zhong
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
- City University of Hong Kong Matter Science Research Institute (Futian, Shenzhen), Shenzhen, 518048, China
- Nanomanufacturing Laboratory (NML), City University of Hong Kong Shenzhen Research Institute, Shenzhen, 518057, China
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka, 816-8580, Japan
- State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong SAR, 999077, China
| |
Collapse
|
2
|
Xu D, Jian P, Liu W, Tan S, Yang Y, Peng M, Dai J, Chen C, Wu F. Vanadium Metal Doping of Monolayer MoS 2 for p-Type Transistors and Fast-Speed Phototransistors. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38657168 DOI: 10.1021/acsami.4c03154] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/26/2024]
Abstract
Modulating the electrical properties of two-dimensional (2D) materials is a fundamental prerequisite for their development to advanced electronic and optoelectronic devices. Substitutional doping has been demonstrated as an effective method for tuning the band structure in monolayer 2D materials. Here, we demonstrate a facile selective-area growth of vanadium-doped molybdenum disulfide (V-doped MoS2) flakes via pre-patterned vanadium-metal-assisted chemical vapor deposition (CVD). Optical microscopy characterization revealed the presence of flake arrays. Transmission electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy were employed to identify the chemical composition and crystalline structure of as-grown flakes. Electrical measurements indicated a light p-type conduction behavior in monolayer V-doped MoS2. Furthermore, the response time of phototransistors based on V-doped MoS2 monolayers exhibited a remarkable capability of 3 ms, representing approximately 3 orders of magnitude faster response than that observed in pure MoS2 phototransistors. This work hereby provides a feasible approach to doping of 2D materials, promising a scalable pathway for the integration of these materials into emerging electronic and optoelectronic devices.
Collapse
Affiliation(s)
- Dan Xu
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Pengcheng Jian
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Weijie Liu
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Shizhou Tan
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Yiming Yang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Meng Peng
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Jiangnan Dai
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Changqing Chen
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Feng Wu
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| |
Collapse
|
3
|
Shen W, Li P, Zhang Q, Han E, Gu G, Wang R, Li X. The Structural and Electronic Engineering of Molybdenum Disulfide Nanosheets as Carbon-Free Sulfur Hosts for Boosting Energy Density and Cycling Life of Lithium-Sulfur Batteries. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2304122. [PMID: 37403292 DOI: 10.1002/smll.202304122] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/18/2023] [Revised: 06/21/2023] [Indexed: 07/06/2023]
Abstract
The compact sulfur cathodes with high sulfur content and high sulfur loading are crucial to promise high energy density of lithium-sulfur (Li-S) batteries. However, some daunting problems, such as low sulfur utilization efficiency, serious polysulfides shuttling, and poor rate performance, are usually accompanied during practical deployment. The sulfur hosts play key roles. Herein, the carbon-free sulfur host composed of vanadium-doped molybdenum disulfide (VMS) nanosheets is reported. Benefiting from the basal plane activation of molybdenum disulfide and structural advantage of VMS, high stacking density of sulfur cathode is allowed for high areal and volumetric capacities of the electrodes together with the effective suppression of polysulfides shuttling and the expedited redox kinetics of sulfur species during cycling. The resultant electrode with high sulfur content of 89 wt.% and high sulfur loading of 7.2 mg cm-2 achieves high gravimetric capacity of 900.9 mAh g-1 , the areal capacity of 6.48 mAh cm-2 , and volumetric capacity of 940 mAh cm-3 at 0.5 C. The electrochemical performance can rival with the state-of-the-art those in the reported Li-S batteries. This work provides methodology guidance for the development of the cathode materials to achieve high-energy-density and long-life Li-S batteries.
Collapse
Affiliation(s)
- Wenxiang Shen
- Hebei Key Laboratory of Functional Polymer, School of Chemical Engineering and Technology, Hebei University of Technology, Tianjin, 300130, China
| | - Pengyue Li
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China
- Fujian Provincial Key Laboratory of Polymer Materials, College of Chemistry and Materials Science, Fujian Normal University, Fuzhou, Fujian, 350007, China
| | - Qi Zhang
- Hebei Key Laboratory of Functional Polymer, School of Chemical Engineering and Technology, Hebei University of Technology, Tianjin, 300130, China
| | - Enshan Han
- Hebei Key Laboratory of Functional Polymer, School of Chemical Engineering and Technology, Hebei University of Technology, Tianjin, 300130, China
| | - Guoxian Gu
- Hebei Key Laboratory of Functional Polymer, School of Chemical Engineering and Technology, Hebei University of Technology, Tianjin, 300130, China
| | - Ruihu Wang
- Hebei Key Laboratory of Functional Polymer, School of Chemical Engineering and Technology, Hebei University of Technology, Tianjin, 300130, China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China
| | - Xiaoju Li
- Hebei Key Laboratory of Functional Polymer, School of Chemical Engineering and Technology, Hebei University of Technology, Tianjin, 300130, China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China
- Fujian Provincial Key Laboratory of Polymer Materials, College of Chemistry and Materials Science, Fujian Normal University, Fuzhou, Fujian, 350007, China
| |
Collapse
|
4
|
Maity D, Sharma R, Sahoo KR, Panda JJ, Lal A, Puthirath AB, Ajayan PM, Narayanan TN. On the electronic and spin-valley coupling of vanadium doped MoS 2(1-x)Se 2xmonolayers. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35:505002. [PMID: 37708898 DOI: 10.1088/1361-648x/acf9d5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/20/2023] [Accepted: 09/14/2023] [Indexed: 09/16/2023]
Abstract
Monolayers of MoS2with tunable bandgap and valley positions are highly demanding for their applications in opto-spintronics. Herein, selenium (Se) and vanadium (V) co-doped MoS2monolayers (vanadium doped MoS2(1-x)Se2x(V-MoSSe)) are developed and showed their variations in the electronic and optical properties with dopant content. Vanadium gets substitutionally (in place of Mo) doped within the MoS2lattice while selenium doped in place of sulfur, as shown by a detailed microstructure and spectroscopy analyses. The bandgap tunability with selenium doping can be achieved while valley shift is occurred due to the doping of vanadium. Chemical vapor deposition assisted grown MoS2(also selenium doped MoS2as shown here) is known for its n-type transport behavior while vanadium doping is found to be changing its nature to p-doping. Chirality dependent photoexcitation studies indicate a room temperature valley splitting in V-MoSSe (∼8 meV), where such a valley splitting is verified using density functional theory based calculations.
Collapse
Affiliation(s)
- Dipak Maity
- Tata Institute of Fundamental Research-Hyderabad, Serilingampally Mandal, Hyderabad 500046, India
| | - Rahul Sharma
- Tata Institute of Fundamental Research-Hyderabad, Serilingampally Mandal, Hyderabad 500046, India
| | - Krishna Rani Sahoo
- Tata Institute of Fundamental Research-Hyderabad, Serilingampally Mandal, Hyderabad 500046, India
| | - Janmey Jay Panda
- Tata Institute of Fundamental Research-Hyderabad, Serilingampally Mandal, Hyderabad 500046, India
| | - Ashique Lal
- Tata Institute of Fundamental Research-Hyderabad, Serilingampally Mandal, Hyderabad 500046, India
| | - Anand B Puthirath
- Department of Mechanical Engineering and Materials Science, Rice University, Houston, TX 77005, United States of America
| | - Pulickel M Ajayan
- Department of Mechanical Engineering and Materials Science, Rice University, Houston, TX 77005, United States of America
| | - Tharangattu N Narayanan
- Tata Institute of Fundamental Research-Hyderabad, Serilingampally Mandal, Hyderabad 500046, India
| |
Collapse
|
5
|
Fang M, Yang EH. Advances in Two-Dimensional Magnetic Semiconductors via Substitutional Doping of Transition Metal Dichalcogenides. MATERIALS (BASEL, SWITZERLAND) 2023; 16:ma16103701. [PMID: 37241328 DOI: 10.3390/ma16103701] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/15/2023] [Revised: 04/14/2023] [Accepted: 05/10/2023] [Indexed: 05/28/2023]
Abstract
Transition metal dichalcogenides (TMDs) are two-dimensional (2D) materials with remarkable electrical, optical, and chemical properties. One promising strategy to tailor the properties of TMDs is to create alloys through a dopant-induced modification. Dopants can introduce additional states within the bandgap of TMDs, leading to changes in their optical, electronic, and magnetic properties. This paper overviews chemical vapor deposition (CVD) methods to introduce dopants into TMD monolayers, and discusses the advantages, limitations, and their impacts on the structural, electrical, optical, and magnetic properties of substitutionally doped TMDs. The dopants in TMDs modify the density and type of carriers in the material, thereby influencing the optical properties of the materials. The magnetic moment and circular dichroism in magnetic TMDs are also strongly affected by doping, which enhances the magnetic signal in the material. Finally, we highlight the different doping-induced magnetic properties of TMDs, including superexchange-induced ferromagnetism and valley Zeeman shift. Overall, this review paper provides a comprehensive summary of magnetic TMDs synthesized via CVD, which can guide future research on doped TMDs for various applications, such as spintronics, optoelectronics, and magnetic memory devices.
Collapse
Affiliation(s)
- Mengqi Fang
- Department of Mechanical Engineering, Stevens Institute of Technology, Hoboken, NJ 07030, USA
| | - Eui-Hyeok Yang
- Department of Mechanical Engineering, Stevens Institute of Technology, Hoboken, NJ 07030, USA
- Center for Quantum Science and Engineering, Stevens Institute of Technology, Hoboken, NJ 07030, USA
| |
Collapse
|
6
|
Xiao Y, Xiong C, Chen MM, Wang S, Fu L, Zhang X. Structure modulation of two-dimensional transition metal chalcogenides: recent advances in methodology, mechanism and applications. Chem Soc Rev 2023; 52:1215-1272. [PMID: 36601686 DOI: 10.1039/d1cs01016f] [Citation(s) in RCA: 22] [Impact Index Per Article: 22.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/06/2023]
Abstract
Together with the development of two-dimensional (2D) materials, transition metal dichalcogenides (TMDs) have become one of the most popular series of model materials for fundamental sciences and practical applications. Due to the ever-growing requirements of customization and multi-function, dozens of modulated structures have been introduced in TMDs. In this review, we present a systematic and comprehensive overview of the structure modulation of TMDs, including point, linear and out-of-plane structures, following and updating the conventional classification for silicon and related bulk semiconductors. In particular, we focus on the structural characteristics of modulated TMD structures and analyse the corresponding root causes. We also summarize the recent progress in modulating methods, mechanisms, properties and applications based on modulated TMD structures. Finally, we demonstrate challenges and prospects in the structure modulation of TMDs and forecast potential directions about what and how breakthroughs can be achieved.
Collapse
Affiliation(s)
- Yao Xiao
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Chengyi Xiong
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Miao-Miao Chen
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Shengfu Wang
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Lei Fu
- The Institute for Advanced Studies (IAS), Wuhan University, Wuhan 430072, P. R. China. .,College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, P. R. China.
| | - Xiuhua Zhang
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| |
Collapse
|
7
|
Li J, Ma Y, Li Y, Li SS, An B, Li J, Cheng J, Gong W, Zhang Y. Interface Influence on the Photoelectric Performance of Transition Metal Dichalcogenide Lateral Heterojunctions. ACS OMEGA 2022; 7:39187-39196. [PMID: 36340091 PMCID: PMC9631909 DOI: 10.1021/acsomega.2c05151] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/11/2022] [Accepted: 09/12/2022] [Indexed: 06/16/2023]
Abstract
The ultrathin feature of two-dimensional (2D) transition metal dichalcogenides (TMDs) has brought special performance in electronic and optoelectronic fields. When vertical and lateral heterojunctions are made using different TMD combinations, the original properties of premier TMDs can be optimized. Especially for lateral heterojunctions, their sharp interface signifies a narrow space charge region, leading to a strong in-plane built-in electric field, which may contribute to high separation efficiency of photogenerated carriers, good rectification behavior, self-powered photoelectric device construction, etc. However, due to the poor controllability over the synthesis process, obtaining a clean and sharp interface of the lateral heterojunction is still a challenge. Herein, we propose a simple chemical vapor deposition (CVD) method, which can effectively separate the growth process of different TMDs, thus resulting in good regulation of the composition change at the junction region. By this method, MoS2-WS2 lateral heterojunctions with sharp interfaces have been obtained with good rectification characteristics, ∼105 on/off ratio, 1874% external quantum efficiency, and ∼120 ms photoresponse speed, exhibiting a better photoelectric performance than that of the lateral ones with graded junctions.
Collapse
Affiliation(s)
- Jingtao Li
- Faculty
of Materials and Manufacturing, Key Laboratory of Advanced Functional
Materials, Ministry of Education, Beijing
University of Technology, Beijing 100124, China
| | - Yang Ma
- Faculty
of Information Technology, Key Laboratory of Opto-Electronics Technology,
Ministry of Education, Beijing University
of Technology, Beijing 100124, China
| | - Yufo Li
- Faculty
of Materials and Manufacturing, Key Laboratory of Advanced Functional
Materials, Ministry of Education, Beijing
University of Technology, Beijing 100124, China
| | - Shao-Sian Li
- Institute
of Materials Science and Engineering, National
Taipei University of Technology, Taipei City 10608, Taiwan
| | - Boxing An
- Faculty
of Materials and Manufacturing, Key Laboratory of Advanced Functional
Materials, Ministry of Education, Beijing
University of Technology, Beijing 100124, China
| | - Jingjie Li
- Faculty
of Materials and Manufacturing, Key Laboratory of Advanced Functional
Materials, Ministry of Education, Beijing
University of Technology, Beijing 100124, China
| | - Jiangong Cheng
- Faculty
of Materials and Manufacturing, Key Laboratory of Advanced Functional
Materials, Ministry of Education, Beijing
University of Technology, Beijing 100124, China
| | - Wei Gong
- Faculty
of Materials and Manufacturing, Key Laboratory of Advanced Functional
Materials, Ministry of Education, Beijing
University of Technology, Beijing 100124, China
| | - Yongzhe Zhang
- Faculty
of Information Technology, Key Laboratory of Opto-Electronics Technology,
Ministry of Education, Beijing University
of Technology, Beijing 100124, China
| |
Collapse
|
8
|
Liu X, Jiang X, Shao G, Xiang H, Li Z, Jin Y, Chen Y, Jiang H, Li H, Shui J, Feng Y, Liu S. Activating the Electrocatalysis of MoS 2 Basal Plane for Hydrogen Evolution via Atomic Defect Configurations. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2200601. [PMID: 35652257 DOI: 10.1002/smll.202200601] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/27/2022] [Revised: 03/13/2022] [Indexed: 06/15/2023]
Abstract
Point defects of heteroatoms and vacancies can activate the inert basal plane of molybdenum sulfide (MoS2 ) to improve its performance on catalyzing the hydrogen evolution reaction (HER). However, the synergy between heteroatoms and vacancies is still unclear. Here, a chemical vapor deposition-assisted in situ vanadium (V) doping method is used to synthesize monolayer MoS2 with abundant and tunable vacancies and V-dopants in the lattice. Ten delicate defect configurations are prepared to provide a complex system for the relationship investigation between microstructure and catalytic performance. The combination of on-chip electrochemical tests and theoretical calculations indicates that the HER performance greatly depends on the type and amount of defect configurations. The optimal configuration is that three V atoms are aggregated and accompanied by abundant sulfur vacancies, in which, H atoms directly interact with Mo and V atoms to form the most stable metal-bridge structure. The on-chip measurements also confirm that the sample with high concentrations of this type of defect configuration exhibits the best catalytic performance, indicating the efficient synergy in the optimal configuration. The revealed effects of defect configurations are expected to inspire the design and regulation of high-efficiency 2D catalysts.
Collapse
Affiliation(s)
- Xiao Liu
- Institute of Chemical Biology and Nanomedicine (ICBN), College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Xingxing Jiang
- Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, 410082, P. R. China
| | - Gonglei Shao
- Institute of Chemical Biology and Nanomedicine (ICBN), College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Haiyan Xiang
- Institute of Chemical Biology and Nanomedicine (ICBN), College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Zhiwei Li
- Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, 410082, P. R. China
| | - Yuanyuan Jin
- Institute of Chemical Biology and Nanomedicine (ICBN), College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Yang Chen
- Institute of Chemical Biology and Nanomedicine (ICBN), College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Huili Jiang
- Institute of Chemical Biology and Nanomedicine (ICBN), College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Huimin Li
- Institute of Chemical Biology and Nanomedicine (ICBN), College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Jianglan Shui
- Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, 410082, P. R. China
| | - Yexin Feng
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, P. R. China
| | - Song Liu
- Institute of Chemical Biology and Nanomedicine (ICBN), College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| |
Collapse
|
9
|
Dong R, Gong X, Yang J, Sun Y, Ma L, Wang J. The Intrinsic Thermodynamic Difficulty and a Step-Guided Mechanism for the Epitaxial Growth of Uniform Multilayer MoS 2 with Controllable Thickness. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2201402. [PMID: 35288996 DOI: 10.1002/adma.202201402] [Citation(s) in RCA: 14] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/12/2022] [Revised: 03/05/2022] [Indexed: 06/14/2023]
Abstract
Multilayer MoS2 shows superior performance over the monolayer MoS2 for electronic devices while the growth of multilayer MoS2 with controllable and uniform thickness is still very challenging. It is revealed by calculations that monolayer MoS2 domains are thermodynamically much more favorable than multilayer ones on epitaxial substrates due to the competition between surface interactions and edge formation, leading accordingly to a layer-by-layer growth pattern and non-continuously distributed multilayer domains with uncontrollable thickness uniformity. The thermodynamics model also suggests that multilayer MoS2 domains with aligned edges can significantly reduce their free energy and represent a local minimum with very prominent energy advantage on a potential energy surface. However, the nucleation probability of multilayer MoS2 domains with aligned edges is, if not impossible, extremely rare on flat substrates. Herein, a step-guided mechanism for the growth of uniform multilayer MoS2 on an epitaxial substrate is theoretically proposed. The steps with proper height on sapphire surface are able to guide the simultaneous nucleation of multilayer MoS2 with aligned edges and uniform thickness, and promote the continuous growth of multilayer MoS2 films. The proposed mechanism can be reasonably extended to grow multilayer 2D materials with uniform thickness on epitaxial substrates.
Collapse
Affiliation(s)
- Ruikang Dong
- School of Physics & School of Chemistry and Chemical Engineering, Southeast University, Nanjing, 211189, China
| | - Xiaoshu Gong
- School of Physics & School of Chemistry and Chemical Engineering, Southeast University, Nanjing, 211189, China
| | - Jiafu Yang
- School of Physics & School of Chemistry and Chemical Engineering, Southeast University, Nanjing, 211189, China
| | - Yueming Sun
- School of Physics & School of Chemistry and Chemical Engineering, Southeast University, Nanjing, 211189, China
| | - Liang Ma
- School of Physics & School of Chemistry and Chemical Engineering, Southeast University, Nanjing, 211189, China
| | - Jinlan Wang
- School of Physics & School of Chemistry and Chemical Engineering, Southeast University, Nanjing, 211189, China
| |
Collapse
|
10
|
Zhang Y, Zhang P, Xu T, Wang X, Jiang H, Gong Y. H2S-assisted growth of 2D MS2 (M = Ti, Zr, Nb). CHINESE CHEM LETT 2022. [DOI: 10.1016/j.cclet.2021.07.036] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/27/2022]
|
11
|
Abstract
Salt-assisted chemical vapor deposition (SA-CVD), which uses halide salts (e.g., NaCl, KBr, etc.) and molten salts (e.g., Na2MoO4, Na2WO4, etc.) as precursors, is one of the most popular methods favored for the fabrication of two-dimensional (2D) materials such as atomically thin metal chalcogenides, graphene, and h-BN. In this review, the distinct functions of halogens (F, Cl, Br, I) and alkali metals (Li, Na, K) in SA-CVD are first clarified. Based on the current development in SA-CVD growth and its related reaction modes, the existing methods are categorized into the Salt 1.0 (halide salts-based) and Salt 2.0 (molten salts-based) techniques. The achievements, advantages, and limitations of each technique are discussed in detail. Finally, new perspectives are proposed for the application of SA-CVD in the synthesis of 2D transition metal dichalcogenides for advanced electronics.
Collapse
Affiliation(s)
- Shisheng Li
- International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), Tsukuba 305-0044, Japan
| |
Collapse
|
12
|
Jiang H, Zheng L, Wang J, Xu M, Gan X, Wang X, Huang W. Inversion symmetry broken in 2H phase vanadium-doped molybdenum disulfide. NANOSCALE 2021; 13:18103-18111. [PMID: 34590642 DOI: 10.1039/d1nr05725a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have received much attention in nonlinear optical applications due to their unique crystal structures and second harmonic generation (SHG) efficiency. However, SHG signals in TMDs show a layer-dependent behavior, consistent with the presence (absence) of inversion symmetry in even-layer (odd-layer) of TMDs. Herein, we synthesized monolayer and bilayer 2H and 3R phase vanadium (V)-doped MoS2 crystal. Raman spectroscopy, XPS, and STEM were used to identify the chemical composition and crystalline structure of as-grown nanoflakes. SHG measurement was used to research the symmetry of V-doped MoS2 crystals with different stacking orders. Significantly, the SHG efficiency in bilayer 2H phase V-doped MoS2 is equivalent to the 3R phase, indicating an inversion symmetry broken lattice structure caused by the in situ V substitute for Mo sites. This study will be conducive to promote the development of promising nonlinear optical devices based on 2D material.
Collapse
Affiliation(s)
- Hanjun Jiang
- Frontiers Science Center for Flexible Electronics (FSCFE) & Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
| | - Lu Zheng
- Frontiers Science Center for Flexible Electronics (FSCFE) & Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
| | - Jing Wang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
| | - Manzhang Xu
- Frontiers Science Center for Flexible Electronics (FSCFE) & Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
| | - Xuewen Wang
- Frontiers Science Center for Flexible Electronics (FSCFE) & Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
| | - Wei Huang
- Frontiers Science Center for Flexible Electronics (FSCFE) & Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
- Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
- MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
- State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China
- Key Laboratory of Flexible Electronics (KLoFE) and Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing 211800, China
| |
Collapse
|
13
|
Zhang Q, Ying H, Li X, Xiang R, Zheng Y, Wang H, Su J, Xu M, Zheng X, Maruyama S, Zhang X. Controlled Doping Engineering in 2D MoS 2 Crystals toward Performance Augmentation of Optoelectronic Devices. ACS APPLIED MATERIALS & INTERFACES 2021; 13:31861-31869. [PMID: 34213304 DOI: 10.1021/acsami.1c07286] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Doping engineering of two-dimensional (2D) semiconductors is vital for expanding their device applications, but has been limited by the inhomogeneous distribution of doping atoms in such an ultrathin thickness. Here, we report the controlled doping of Sn heteroatoms into 2D MoS2 crystals through a single-step deposition method to improve the photodetection ability of MoS2 flakes, whereas the host lattice has been well reserved without the random aggregation of the introduced atoms. Atomic-resolution and spectroscopic characterizations provide direct evidence that Sn atoms have been substitutionally doped at Mo sites in the MoS2 lattice and the Sn dopant leads to an additional strain in the host lattice. The detection performance of Sn-doped MoS2 flakes exhibits an order of magnitude improvement (up to Rλ ≈ 29 A/W, EQE ≈ 7.8 × 103%, D* ≈ 1011 Jones@470 nm) as compared with that of pure MoS2 flakes, which is associated with electrons released from Sn atoms. Such a substitutional doping process in TMDs provides a potential platform to tune the on-demand properties of these 2D materials.
Collapse
Affiliation(s)
- Qi Zhang
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Haoting Ying
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
| | - Xin Li
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
| | - Rong Xiang
- Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Yongjia Zheng
- Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Hemiao Wang
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
| | - Jun Su
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
| | - Minxuan Xu
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
| | - Xin Zheng
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
| | - Shigeo Maruyama
- Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Xuefeng Zhang
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
| |
Collapse
|
14
|
Li S, Hong J, Gao B, Lin Y, Lim HE, Lu X, Wu J, Liu S, Tateyama Y, Sakuma Y, Tsukagoshi K, Suenaga K, Taniguchi T. Tunable Doping of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two-Dimensional Electronics. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2004438. [PMID: 34105285 PMCID: PMC8188190 DOI: 10.1002/advs.202004438] [Citation(s) in RCA: 31] [Impact Index Per Article: 10.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/18/2020] [Revised: 01/24/2021] [Indexed: 05/27/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) with unique electrical properties are fascinating materials used for future electronics. However, the strong Fermi level pinning effect at the interface of TMDCs and metal electrodes always leads to high contact resistance, which seriously hinders their application in 2D electronics. One effective way to overcome this is to use metallic TMDCs or transferred metal electrodes as van der Waals (vdW) contacts. Alternatively, using highly conductive doped TMDCs will have a profound impact on the contact engineering of 2D electronics. Here, a novel chemical vapor deposition (CVD) using mixed molten salts is established for vapor-liquid-solid growth of high-quality rhenium (Re) and vanadium (V) doped TMDC monolayers with high controllability and reproducibility. A tunable semiconductor to metal transition is observed in the Re- and V-doped TMDCs. Electrical conductivity increases up to a factor of 108 in the degenerate V-doped WS2 and WSe2 . Using V-doped WSe2 as vdW contact, the on-state current and on/off ratio of WSe2 -based field-effect transistors have been substantially improved (from ≈10-8 to 10-5 A; ≈104 to 108 ), compared to metal contacts. Future studies on lateral contacts and interconnects using doped TMDCs will pave the way for 2D integrated circuits and flexible electronics.
Collapse
Affiliation(s)
- Shisheng Li
- International Center for Young Scientists (ICYS)National Institute for Materials Science (NIMS)Tsukuba305‐0044Japan
| | - Jinhua Hong
- Nanomaterials Research InstituteNational Institute of Advanced Industrial Science and TechnologyAIST Central 5Tsukuba305‐8564Japan
| | - Bo Gao
- Center for Green Research on Energy and Environmental Materials (GREEN)National Institute for Materials Science (NIMS)Tsukuba305‐0044Japan
- International Center for Materials Nanoarchitectonics (WPI‐MANA)National Institute for Materials Science (NIMS)Tsukuba305‐0044Japan
| | - Yung‐Chang Lin
- Nanomaterials Research InstituteNational Institute of Advanced Industrial Science and TechnologyAIST Central 5Tsukuba305‐8564Japan
| | - Hong En Lim
- Department of PhysicsTokyo Metropolitan UniversityHachioji192‐0397Japan
| | - Xueyi Lu
- International Center for Materials Nanoarchitectonics (WPI‐MANA)National Institute for Materials Science (NIMS)Tsukuba305‐0044Japan
| | - Jing Wu
- Institute of Materials Research and EngineeringAgency for ScienceTechnology and ResearchSingapore138634Singapore
| | - Song Liu
- Institute of Chemical Biology and Nanomedicine (ICBN)College of Chemistry and Chemical EngineeringHunan UniversityChangsha410082P. R. China
| | - Yoshitaka Tateyama
- Center for Green Research on Energy and Environmental Materials (GREEN)National Institute for Materials Science (NIMS)Tsukuba305‐0044Japan
- International Center for Materials Nanoarchitectonics (WPI‐MANA)National Institute for Materials Science (NIMS)Tsukuba305‐0044Japan
| | - Yoshiki Sakuma
- Research Center for Functional MaterialsNational Institute for Materials Science (NIMS)Tsukuba305‐0044Japan
| | - Kazuhito Tsukagoshi
- International Center for Materials Nanoarchitectonics (WPI‐MANA)National Institute for Materials Science (NIMS)Tsukuba305‐0044Japan
| | - Kazu Suenaga
- Nanomaterials Research InstituteNational Institute of Advanced Industrial Science and TechnologyAIST Central 5Tsukuba305‐8564Japan
| | - Takaaki Taniguchi
- International Center for Materials Nanoarchitectonics (WPI‐MANA)National Institute for Materials Science (NIMS)Tsukuba305‐0044Japan
| |
Collapse
|
15
|
Zou J, Cai Z, Lai Y, Tan J, Zhang R, Feng S, Wang G, Lin J, Liu B, Cheng HM. Doping Concentration Modulation in Vanadium-Doped Monolayer Molybdenum Disulfide for Synaptic Transistors. ACS NANO 2021; 15:7340-7347. [PMID: 33764052 DOI: 10.1021/acsnano.1c00596] [Citation(s) in RCA: 30] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Doping is an effective way to modify the electronic property of two-dimensional (2D) materials and endow them with additional functionalities. However, wide-range control of the doping concentrations in monolayer 2D materials with large-scale uniformity remains challenging. Here, we report in situ chemical vapor deposition growth of vanadium-doped monolayer molybdenum disulfide (MoS2) with widely tunable doping concentrations ranging from 0.3 to 13.1 atom %. The key to regulate the doping concentration lies in the use of appropriate vanadium precursors with different doping abilities, which also generate large-scale uniform doping to MoS2. Artificial synaptic transistors were fabricated using the heavily doped MoS2 as the channel material. Synaptic potentiation, depression, and repetitive learning processes were mimicked by the gate-tunable changes of channel conductance in such transistors with abundant vanadium atoms to trap/detrap electrons. This work develops a feasible method to dope monolayer 2D semiconductors and demonstrates their applications in artificial synaptic transistors.
Collapse
Affiliation(s)
- Jingyun Zou
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, P.R. China
| | - Zhengyang Cai
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, P.R. China
| | - Yongjue Lai
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, P.R. China
| | - Junyang Tan
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, P.R. China
| | - Rongjie Zhang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, P.R. China
| | - Simin Feng
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, P.R. China
| | - Gang Wang
- Department of Physics, SUSTech Core Research Facilities, Southern University of Science and Technology, Shenzhen 518055, P.R. China
| | - Junhao Lin
- Department of Physics, SUSTech Core Research Facilities, Southern University of Science and Technology, Shenzhen 518055, P.R. China
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, P.R. China
| | - Hui-Ming Cheng
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute & Institute of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, P.R. China
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, P.R. China
| |
Collapse
|
16
|
Pan L, Jiao C, Liang Y, Xiong J, Wang S, Zhu H, Chen G, Song H. In situ construction of MoS 2@CoS 2 spherical hydrangea-shaped clusters for enhanced visible-light photocatalytic degradation of sulfamethoxazole. NEW J CHEM 2021. [DOI: 10.1039/d1nj00161b] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
This article explores the rich element cobalt, found in the earth's crust, to replace noble metals as co-catalysts that serve as electron traps to enhance the efficiency of electron transfer from molybdenum disulfide (MoS2) to cobalt sulfide (CoS2).
Collapse
Affiliation(s)
- Liushu Pan
- School of Resources
- Environment and Materials
- Guangxi University
- Nanning 530003
- China
| | - Chunlin Jiao
- School of Resources
- Environment and Materials
- Guangxi University
- Nanning 530003
- China
| | - Yinna Liang
- School of Resources
- Environment and Materials
- Guangxi University
- Nanning 530003
- China
| | - Jianhua Xiong
- School of Resources
- Environment and Materials
- Guangxi University
- Nanning 530003
- China
| | - Shuangfei Wang
- Guangxi Key Laboratory of Clean Pulp & Papermaking and Pollution Control
- Nanning 530004
- China
| | - Hongxiang Zhu
- Guangxi Key Laboratory of Clean Pulp & Papermaking and Pollution Control
- Nanning 530004
- China
| | - Guoning Chen
- Guangxi Bossco Environmental Protection Technology Co., Ltd
- Nanning 530007
- China
| | - Hainong Song
- Guangxi Bossco Environmental Protection Technology Co., Ltd
- Nanning 530007
- China
| |
Collapse
|