Tuning Electrical Conductance in Bilayer MoS2 through Defect-Mediated Interlayer Chemical Bonding

Electrical Polarity Modulation in V-Doped Monolayer WS2 for Homogeneous CMOS Inverters

As demand for higher integration density and smaller devices grows, silicon-based complementary metal-oxide-semiconductor (CMOS) devices will soon reach their ultimate limits. 2D transition metal dichalcogenides (TMDs) semiconductors, known for excellent electrical performance and stable atomic structure, are seen as promising materials for future integrated circuits. However, controlled and reliable doping of 2D TMDs, a key step for creating homogeneous CMOS logic components, remains a challenge. In this study, a continuous electrical polarity modulation of monolayer WS2 from intrinsic n-type to ambipolar, then to p-type, and ultimately to a quasi-metallic state is achieved simply by introducing controllable amounts of vanadium (V) atoms into the WS2 lattice as p-type dopants during chemical vapor deposition (CVD). The achievement of purely p-type field-effect transistors (FETs) is particularly noteworthy based on the 4.7 at% V-doped monolayer WS2, demonstrating a remarkable on/off current ratio of 105. Expanding on this triumph, the first initial prototype of ultrathin homogeneous CMOS inverters based on monolayer WS2 is being constructed. These outcomes validate the feasibility of constructing homogeneous CMOS devices through the atomic doping process of 2D materials, marking a significant milestone for the future development of integrated circuits.

Vanadium Metal Doping of Monolayer MoS2 for p-Type Transistors and Fast-Speed Phototransistors

Modulating the electrical properties of two-dimensional (2D) materials is a fundamental prerequisite for their development to advanced electronic and optoelectronic devices. Substitutional doping has been demonstrated as an effective method for tuning the band structure in monolayer 2D materials. Here, we demonstrate a facile selective-area growth of vanadium-doped molybdenum disulfide (V-doped MoS2) flakes via pre-patterned vanadium-metal-assisted chemical vapor deposition (CVD). Optical microscopy characterization revealed the presence of flake arrays. Transmission electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy were employed to identify the chemical composition and crystalline structure of as-grown flakes. Electrical measurements indicated a light p-type conduction behavior in monolayer V-doped MoS2. Furthermore, the response time of phototransistors based on V-doped MoS2 monolayers exhibited a remarkable capability of 3 ms, representing approximately 3 orders of magnitude faster response than that observed in pure MoS2 phototransistors. This work hereby provides a feasible approach to doping of 2D materials, promising a scalable pathway for the integration of these materials into emerging electronic and optoelectronic devices.

The Structural and Electronic Engineering of Molybdenum Disulfide Nanosheets as Carbon-Free Sulfur Hosts for Boosting Energy Density and Cycling Life of Lithium-Sulfur Batteries

The compact sulfur cathodes with high sulfur content and high sulfur loading are crucial to promise high energy density of lithium-sulfur (Li-S) batteries. However, some daunting problems, such as low sulfur utilization efficiency, serious polysulfides shuttling, and poor rate performance, are usually accompanied during practical deployment. The sulfur hosts play key roles. Herein, the carbon-free sulfur host composed of vanadium-doped molybdenum disulfide (VMS) nanosheets is reported. Benefiting from the basal plane activation of molybdenum disulfide and structural advantage of VMS, high stacking density of sulfur cathode is allowed for high areal and volumetric capacities of the electrodes together with the effective suppression of polysulfides shuttling and the expedited redox kinetics of sulfur species during cycling. The resultant electrode with high sulfur content of 89 wt.% and high sulfur loading of 7.2 mg cm-2 achieves high gravimetric capacity of 900.9 mAh g-1 , the areal capacity of 6.48 mAh cm-2 , and volumetric capacity of 940 mAh cm-3 at 0.5 C. The electrochemical performance can rival with the state-of-the-art those in the reported Li-S batteries. This work provides methodology guidance for the development of the cathode materials to achieve high-energy-density and long-life Li-S batteries.

On the electronic and spin-valley coupling of vanadium doped MoS2(1-x)Se2xmonolayers

Monolayers of MoS2with tunable bandgap and valley positions are highly demanding for their applications in opto-spintronics. Herein, selenium (Se) and vanadium (V) co-doped MoS2monolayers (vanadium doped MoS2(1-x)Se2x(V-MoSSe)) are developed and showed their variations in the electronic and optical properties with dopant content. Vanadium gets substitutionally (in place of Mo) doped within the MoS2lattice while selenium doped in place of sulfur, as shown by a detailed microstructure and spectroscopy analyses. The bandgap tunability with selenium doping can be achieved while valley shift is occurred due to the doping of vanadium. Chemical vapor deposition assisted grown MoS2(also selenium doped MoS2as shown here) is known for its n-type transport behavior while vanadium doping is found to be changing its nature to p-doping. Chirality dependent photoexcitation studies indicate a room temperature valley splitting in V-MoSSe (∼8 meV), where such a valley splitting is verified using density functional theory based calculations.

Advances in Two-Dimensional Magnetic Semiconductors via Substitutional Doping of Transition Metal Dichalcogenides

Transition metal dichalcogenides (TMDs) are two-dimensional (2D) materials with remarkable electrical, optical, and chemical properties. One promising strategy to tailor the properties of TMDs is to create alloys through a dopant-induced modification. Dopants can introduce additional states within the bandgap of TMDs, leading to changes in their optical, electronic, and magnetic properties. This paper overviews chemical vapor deposition (CVD) methods to introduce dopants into TMD monolayers, and discusses the advantages, limitations, and their impacts on the structural, electrical, optical, and magnetic properties of substitutionally doped TMDs. The dopants in TMDs modify the density and type of carriers in the material, thereby influencing the optical properties of the materials. The magnetic moment and circular dichroism in magnetic TMDs are also strongly affected by doping, which enhances the magnetic signal in the material. Finally, we highlight the different doping-induced magnetic properties of TMDs, including superexchange-induced ferromagnetism and valley Zeeman shift. Overall, this review paper provides a comprehensive summary of magnetic TMDs synthesized via CVD, which can guide future research on doped TMDs for various applications, such as spintronics, optoelectronics, and magnetic memory devices.

Structure modulation of two-dimensional transition metal chalcogenides: recent advances in methodology, mechanism and applications

Together with the development of two-dimensional (2D) materials, transition metal dichalcogenides (TMDs) have become one of the most popular series of model materials for fundamental sciences and practical applications. Due to the ever-growing requirements of customization and multi-function, dozens of modulated structures have been introduced in TMDs. In this review, we present a systematic and comprehensive overview of the structure modulation of TMDs, including point, linear and out-of-plane structures, following and updating the conventional classification for silicon and related bulk semiconductors. In particular, we focus on the structural characteristics of modulated TMD structures and analyse the corresponding root causes. We also summarize the recent progress in modulating methods, mechanisms, properties and applications based on modulated TMD structures. Finally, we demonstrate challenges and prospects in the structure modulation of TMDs and forecast potential directions about what and how breakthroughs can be achieved.

Interface Influence on the Photoelectric Performance of Transition Metal Dichalcogenide Lateral Heterojunctions

The ultrathin feature of two-dimensional (2D) transition metal dichalcogenides (TMDs) has brought special performance in electronic and optoelectronic fields. When vertical and lateral heterojunctions are made using different TMD combinations, the original properties of premier TMDs can be optimized. Especially for lateral heterojunctions, their sharp interface signifies a narrow space charge region, leading to a strong in-plane built-in electric field, which may contribute to high separation efficiency of photogenerated carriers, good rectification behavior, self-powered photoelectric device construction, etc. However, due to the poor controllability over the synthesis process, obtaining a clean and sharp interface of the lateral heterojunction is still a challenge. Herein, we propose a simple chemical vapor deposition (CVD) method, which can effectively separate the growth process of different TMDs, thus resulting in good regulation of the composition change at the junction region. By this method, MoS₂-WS₂ lateral heterojunctions with sharp interfaces have been obtained with good rectification characteristics, ∼10⁵ on/off ratio, 1874% external quantum efficiency, and ∼120 ms photoresponse speed, exhibiting a better photoelectric performance than that of the lateral ones with graded junctions.

Activating the Electrocatalysis of MoS2 Basal Plane for Hydrogen Evolution via Atomic Defect Configurations

Point defects of heteroatoms and vacancies can activate the inert basal plane of molybdenum sulfide (MoS₂ ) to improve its performance on catalyzing the hydrogen evolution reaction (HER). However, the synergy between heteroatoms and vacancies is still unclear. Here, a chemical vapor deposition-assisted in situ vanadium (V) doping method is used to synthesize monolayer MoS₂ with abundant and tunable vacancies and V-dopants in the lattice. Ten delicate defect configurations are prepared to provide a complex system for the relationship investigation between microstructure and catalytic performance. The combination of on-chip electrochemical tests and theoretical calculations indicates that the HER performance greatly depends on the type and amount of defect configurations. The optimal configuration is that three V atoms are aggregated and accompanied by abundant sulfur vacancies, in which, H atoms directly interact with Mo and V atoms to form the most stable metal-bridge structure. The on-chip measurements also confirm that the sample with high concentrations of this type of defect configuration exhibits the best catalytic performance, indicating the efficient synergy in the optimal configuration. The revealed effects of defect configurations are expected to inspire the design and regulation of high-efficiency 2D catalysts.

The Intrinsic Thermodynamic Difficulty and a Step-Guided Mechanism for the Epitaxial Growth of Uniform Multilayer MoS2 with Controllable Thickness

Multilayer MoS₂ shows superior performance over the monolayer MoS₂ for electronic devices while the growth of multilayer MoS₂ with controllable and uniform thickness is still very challenging. It is revealed by calculations that monolayer MoS₂ domains are thermodynamically much more favorable than multilayer ones on epitaxial substrates due to the competition between surface interactions and edge formation, leading accordingly to a layer-by-layer growth pattern and non-continuously distributed multilayer domains with uncontrollable thickness uniformity. The thermodynamics model also suggests that multilayer MoS₂ domains with aligned edges can significantly reduce their free energy and represent a local minimum with very prominent energy advantage on a potential energy surface. However, the nucleation probability of multilayer MoS₂ domains with aligned edges is, if not impossible, extremely rare on flat substrates. Herein, a step-guided mechanism for the growth of uniform multilayer MoS₂ on an epitaxial substrate is theoretically proposed. The steps with proper height on sapphire surface are able to guide the simultaneous nucleation of multilayer MoS₂ with aligned edges and uniform thickness, and promote the continuous growth of multilayer MoS₂ films. The proposed mechanism can be reasonably extended to grow multilayer 2D materials with uniform thickness on epitaxial substrates.

Salt-assisted chemical vapor deposition of two-dimensional transition metal dichalcogenides

Salt-assisted chemical vapor deposition (SA-CVD), which uses halide salts (e.g., NaCl, KBr, etc.) and molten salts (e.g., Na2MoO4, Na2WO4, etc.) as precursors, is one of the most popular methods favored for the fabrication of two-dimensional (2D) materials such as atomically thin metal chalcogenides, graphene, and h-BN. In this review, the distinct functions of halogens (F, Cl, Br, I) and alkali metals (Li, Na, K) in SA-CVD are first clarified. Based on the current development in SA-CVD growth and its related reaction modes, the existing methods are categorized into the Salt 1.0 (halide salts-based) and Salt 2.0 (molten salts-based) techniques. The achievements, advantages, and limitations of each technique are discussed in detail. Finally, new perspectives are proposed for the application of SA-CVD in the synthesis of 2D transition metal dichalcogenides for advanced electronics.

Inversion symmetry broken in 2H phase vanadium-doped molybdenum disulfide

Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have received much attention in nonlinear optical applications due to their unique crystal structures and second harmonic generation (SHG) efficiency. However, SHG signals in TMDs show a layer-dependent behavior, consistent with the presence (absence) of inversion symmetry in even-layer (odd-layer) of TMDs. Herein, we synthesized monolayer and bilayer 2H and 3R phase vanadium (V)-doped MoS₂ crystal. Raman spectroscopy, XPS, and STEM were used to identify the chemical composition and crystalline structure of as-grown nanoflakes. SHG measurement was used to research the symmetry of V-doped MoS₂ crystals with different stacking orders. Significantly, the SHG efficiency in bilayer 2H phase V-doped MoS₂ is equivalent to the 3R phase, indicating an inversion symmetry broken lattice structure caused by the in situ V substitute for Mo sites. This study will be conducive to promote the development of promising nonlinear optical devices based on 2D material.

Controlled Doping Engineering in 2D MoS2 Crystals toward Performance Augmentation of Optoelectronic Devices

Doping engineering of two-dimensional (2D) semiconductors is vital for expanding their device applications, but has been limited by the inhomogeneous distribution of doping atoms in such an ultrathin thickness. Here, we report the controlled doping of Sn heteroatoms into 2D MoS₂ crystals through a single-step deposition method to improve the photodetection ability of MoS₂ flakes, whereas the host lattice has been well reserved without the random aggregation of the introduced atoms. Atomic-resolution and spectroscopic characterizations provide direct evidence that Sn atoms have been substitutionally doped at Mo sites in the MoS₂ lattice and the Sn dopant leads to an additional strain in the host lattice. The detection performance of Sn-doped MoS₂ flakes exhibits an order of magnitude improvement (up to R_λ ≈ 29 A/W, EQE ≈ 7.8 × 10³%, D* ≈ 10¹¹ Jones@470 nm) as compared with that of pure MoS₂ flakes, which is associated with electrons released from Sn atoms. Such a substitutional doping process in TMDs provides a potential platform to tune the on-demand properties of these 2D materials.

Tunable Doping of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two-Dimensional Electronics

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) with unique electrical properties are fascinating materials used for future electronics. However, the strong Fermi level pinning effect at the interface of TMDCs and metal electrodes always leads to high contact resistance, which seriously hinders their application in 2D electronics. One effective way to overcome this is to use metallic TMDCs or transferred metal electrodes as van der Waals (vdW) contacts. Alternatively, using highly conductive doped TMDCs will have a profound impact on the contact engineering of 2D electronics. Here, a novel chemical vapor deposition (CVD) using mixed molten salts is established for vapor-liquid-solid growth of high-quality rhenium (Re) and vanadium (V) doped TMDC monolayers with high controllability and reproducibility. A tunable semiconductor to metal transition is observed in the Re- and V-doped TMDCs. Electrical conductivity increases up to a factor of 108 in the degenerate V-doped WS2 and WSe2 . Using V-doped WSe2 as vdW contact, the on-state current and on/off ratio of WSe2 -based field-effect transistors have been substantially improved (from ≈10-8 to 10-5 A; ≈104 to 108 ), compared to metal contacts. Future studies on lateral contacts and interconnects using doped TMDCs will pave the way for 2D integrated circuits and flexible electronics.

Doping Concentration Modulation in Vanadium-Doped Monolayer Molybdenum Disulfide for Synaptic Transistors

Doping is an effective way to modify the electronic property of two-dimensional (2D) materials and endow them with additional functionalities. However, wide-range control of the doping concentrations in monolayer 2D materials with large-scale uniformity remains challenging. Here, we report in situ chemical vapor deposition growth of vanadium-doped monolayer molybdenum disulfide (MoS₂) with widely tunable doping concentrations ranging from 0.3 to 13.1 atom %. The key to regulate the doping concentration lies in the use of appropriate vanadium precursors with different doping abilities, which also generate large-scale uniform doping to MoS₂. Artificial synaptic transistors were fabricated using the heavily doped MoS₂ as the channel material. Synaptic potentiation, depression, and repetitive learning processes were mimicked by the gate-tunable changes of channel conductance in such transistors with abundant vanadium atoms to trap/detrap electrons. This work develops a feasible method to dope monolayer 2D semiconductors and demonstrates their applications in artificial synaptic transistors.

In situ construction of MoS2@CoS2 spherical hydrangea-shaped clusters for enhanced visible-light photocatalytic degradation of sulfamethoxazole

This article explores the rich element cobalt, found in the earth's crust, to replace noble metals as co-catalysts that serve as electron traps to enhance the efficiency of electron transfer from molybdenum disulfide (MoS₂) to cobalt sulfide (CoS₂).