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Liu J, Jiang Q, Huang B, Han X, Lu X, Ma N, Chen J, Mei H, Di Z, Liu Z, Li A, Ye M. Realization of Honeycomb Tellurene with Topological Edge States. NANO LETTERS 2024. [PMID: 39037306 DOI: 10.1021/acs.nanolett.4c02171] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/23/2024]
Abstract
The two-dimensional (2D) honeycomb lattice has attracted intensive research interest due to the appearance of Dirac-type band structures as the consequence of two sublattices in the honeycomb structure. Introducing strong spin-orbit coupling (SOC) leads to a gap opening at the Dirac point, transforming the honeycomb lattice into a 2D topological insulator as a platform for the quantum spin Hall effect (QSHE). In this work, we realize a 2D honeycomb-structured film with tellurium, the heaviest nonradioactive element in Group VI, namely, tellurene, via molecular beam epitaxy. We revealed the gap opening of 160 meV at the Dirac point due to the strong SOC in the honeycomb-structured tellurene by angle-resolved photoemission spectroscopy. The topological edge states of tellurene are detected via scanning tunneling microscopy/spectroscopy. These results demonstrate that tellurene is a novel 2D honeycomb lattice with strong SOC, and they unambiguously prove that tellurene is a promising candidate for a room-temperature QSHE system.
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Affiliation(s)
- Jianzhong Liu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201204, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Qi Jiang
- Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201204, People's Republic of China
- Center for Transformative Science, ShanghaiTech University, Shanghai 201210, People's Republic of China
| | - Benrui Huang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Xiaowen Han
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Xiangle Lu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Ni Ma
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Jingyi Chen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China
| | - Hongping Mei
- University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Zengfeng Di
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Zhongkai Liu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, People's Republic of China
| | - Ang Li
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, People's Republic of China
| | - Mao Ye
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201204, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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2
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Singh H, Higuchi-Roos T, Roncoroni F, Prendergast D, Nath M. Solar enhanced oxygen evolution reaction with transition metal telluride. Front Chem 2024; 12:1381144. [PMID: 38736687 PMCID: PMC11082350 DOI: 10.3389/fchem.2024.1381144] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/02/2024] [Accepted: 04/02/2024] [Indexed: 05/14/2024] Open
Abstract
The photo-enhanced electrocatalytic method of oxygen evolution reaction (OER) shows promise for enhancing the effectiveness of clear energy generation through water splitting by using renewable and sustainable source of energy. However, despite benefits of photoelectrocatalytic (PEC) water splitting, its uses are constrained by its low efficiency as a result of charge carrier recombination, a large overpotential, and sluggish reaction kinetics. Here, we illustrate that Nickel telluride (NiTe) synthesized by hydrothermal methods can function as an extremely effective photo-coupled electrochemical oxygen evolution reaction (POER) catalyst. In this study, NiTe was synthesized by hydrothermal method at 145°C within just an hour of reaction time. In dark conditions, the NiTe deposited on carbon cloth substrate shows a small oxygen evolution reaction overpotential (261 mV) at a current density of 10 mA cm-2, a reduced Tafel slope (65.4 mV dec-1), and negligible activity decay after 12 h of chronoamperometry. By virtue of its enhanced photo response, excellent light harvesting ability, and increased interfacial kinetics of charge separation, the NiTe electrode under simulated solar illumination displays exceptional photoelectrochemical performance exhibiting overpotential of 165 mV at current density of 10 mA cm-2, which is about 96 mV less than on dark conditions. In addition, Density Functional Theory investigations have been carried out on the NiTe surface, the results of which demonstrated a greater adsorption energy for intermediate -OH on the catalyst site. Since the -OH adsorption on the catalyst site correlates to catalyst activation, it indicates the facile electrocatalytic activity of NiTe owing to favorable catalyst activation. DFT calculations also revealed the facile charge density redistribution following intermediate -OH adsorption on the NiTe surface. This work demonstrates that arrays of NiTe elongated nanostructure are a promising option for both electrochemical and photoelectrocatalytic water oxidation and offers broad suggestions for developing effective PEC devices.
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Affiliation(s)
- Harish Singh
- Department of Chemistry, Missouri University of Science and Technology, Rolla, MO, United States
| | - Taishi Higuchi-Roos
- Department of Chemical and Biochemical Engineering, Missouri University of Science and Technology, Rolla, MO, United States
| | - Fabrice Roncoroni
- Joint Center for Energy Storage Research, the Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, United States
| | - David Prendergast
- Joint Center for Energy Storage Research, the Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, United States
| | - Manashi Nath
- Department of Chemistry, Missouri University of Science and Technology, Rolla, MO, United States
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Lee H, Heo E, Yoon H. Physically Exfoliating 2D Materials: A Versatile Combination of Different Materials into a Layered Structure. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2023; 39:18678-18695. [PMID: 38095583 DOI: 10.1021/acs.langmuir.3c02418] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/27/2023]
Abstract
Improving the properties of the existing two-dimensional (2D) materials is a major concern for many researchers today. Synergistic coupling of single-phase 2D material species with secondary functional materials has resulted in 2D nanohybrids with significantly enhanced properties beyond the sum of their individual components. In particular, nanohybrids created by alternatingly integrating different material species in the confined 2D nanometer regime have the potential to meet the needs of a wide variety of applications, particularly the many important energy-related applications that are of interest. However, scaling up production of 2D nanohybrids is still challenging, which is a major barrier to their practical application. Delamination and exfoliation by physical means separate the weakly bound 2D nanosheets into kinetically stable single- or few-layers. Herein, we provide a concise overview of recent achievements in the physical exfoliation-based fabrication of 2D nanohybrids featuring controlled heterolayered structures. Several strategies to efficiently produce heterolayered 2D nanohybrids in large quantities are described, such as (i) coexfoliation of different 2D species, (ii) aqueous-phase synthesis, and (iii) gas-phase synthesis. The versatility of the 2D nanohybrids was also illustrated by remarkable research examples, especially in energy-related applications.
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Affiliation(s)
- Haney Lee
- Department of Polymer Engineering, Graduate School, Chonnam National University, 77 Yongbong-ro, Buk-gu, Gwangju 61186, South Korea
| | - Eunseo Heo
- Department of Polymer Engineering, Graduate School, Chonnam National University, 77 Yongbong-ro, Buk-gu, Gwangju 61186, South Korea
| | - Hyeonseok Yoon
- Department of Polymer Engineering, Graduate School, Chonnam National University, 77 Yongbong-ro, Buk-gu, Gwangju 61186, South Korea
- School of Polymer Science and Engineering, Chonnam National University, 77 Yongbong-ro, Buk-gu, Gwangju 61186, South Korea
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Kim TH, Park SW, Lee HJ, Kim DH, Choi JY, Kim TG. Effect of Transition Metal Dichalcogenide Based Confinement Layers on the Performance of Phase-Change Heterostructure Memory. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2303659. [PMID: 37485593 DOI: 10.1002/smll.202303659] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/02/2023] [Revised: 07/04/2023] [Indexed: 07/25/2023]
Abstract
Phase-change random-access memory is a promising non-volatile memory technology. However repeated phase-change operations can cause durability issues owing to defects formed by long-distance atom diffusion. To mitigate these issues, phase-change heterostructure (PCH) devices with confinement material (CM) layers based on transition metal dichalcogenides (TMDs) such as TiTe2 have been proposed. This study implements PCH devices with additional TMDs, including NiTe2 and MoTe2 , alongside TiTe2 , and analyzes their characteristics by examining the differences in the CM layers. The results show that the NiTe2 -based PCH device demonstrates a RESET current of 1.4 mA, 38% lower than that of the TiTe2 -based device, enabling low-power operation. Furthermore, the MoTe2 -based PCH device exhibits a cycling endurance exceeding 107 cycles, a five-fold improvement in durability compare with the TiTe2 -based device. The performance differences observe in each PCH device can be attributed to the variation in the material properties, such as the cohesive energy and electrical conductivity, of the TMDs used as the CM layer. These results provide critical clues to improve the performance and reliability of conventional PCH memory devices.
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Affiliation(s)
- Tae Ho Kim
- School of Electrical Engineering, Korea University, Seoul, Seongbuk-gu, 02841, South Korea
| | - Seung Woo Park
- School of Electrical Engineering, Korea University, Seoul, Seongbuk-gu, 02841, South Korea
| | - Ho Jin Lee
- School of Electrical Engineering, Korea University, Seoul, Seongbuk-gu, 02841, South Korea
| | - Dong Hyun Kim
- School of Electrical Engineering, Korea University, Seoul, Seongbuk-gu, 02841, South Korea
| | - Jun Young Choi
- School of Electrical Engineering, Korea University, Seoul, Seongbuk-gu, 02841, South Korea
| | - Tae Geun Kim
- School of Electrical Engineering, Korea University, Seoul, Seongbuk-gu, 02841, South Korea
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5
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Xie R, Luo W, Zou L, Fan X, Li C, Lv T, Jiang J, Chen Z, Zhou Y. Low-temperature synthesis of colloidal few-layer WTe 2 nanostructures for electrochemical hydrogen evolution. DISCOVER NANO 2023; 18:44. [PMID: 37382716 DOI: 10.1186/s11671-023-03796-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/08/2022] [Accepted: 02/09/2023] [Indexed: 06/30/2023]
Abstract
High-quality transition metal tellurides, especially for WTe2, have been demonstrated to be necessarily synthesized under close environments and high temperatures, which are restricted by the low formation Gibbs free energy, thus limiting the electrochemical reaction mechanism and application studies. Here, we report a low-temperature colloidal synthesis of few-layer WTe2 nanostructures with lateral sizes around hundreds of nanometers, which could be tuned the aggregation state to obtain the nanoflowers or nanosheets by using different surfactant agents. The crystal phase and chemical composition of WTe2 nanostructures were analyzed by combining the characterization of X-ray diffraction and high-resolution transmission electron microscopy imaging and elements mapping. The as-synthesized WTe2 nanostructures and its hybrid catalysts were found to show an excellent HER performance with low overpotential and small Tafel slope. The carbon-based WTe2-GO and WTe2-CNT hybrid catalysts also have been synthesized by the similar strategy to study the electrochemical interface. The energy diagram and microreactor devices have been used to reveal the interface contribution to electrochemical performance, which shows the identical performance results with as-synthesized WTe2-carbon hybrid catalysts. These results summarize the interface design principle for semimetallic or metallic catalysts and also confirm the possible electrochemical applications of two-dimensional transition metal tellurides.
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Affiliation(s)
- Rui Xie
- School of Physics and Electronics, Hunan Key Laboratory of Nanophotonics and Devices, Central South University, 932 South Lushan Road, Changsha, 410083, Hunan, People's Republic of China
- College of Chemistry, Nankai University, Tianjin, 300071, People's Republic of China
- Department of Chemistry, Yale University, New Haven, CT, 06511, USA
| | - Wenchen Luo
- School of Physics and Electronics, Hunan Key Laboratory of Nanophotonics and Devices, Central South University, 932 South Lushan Road, Changsha, 410083, Hunan, People's Republic of China
| | - Luwei Zou
- School of Physics and Electronics, Hunan Key Laboratory of Nanophotonics and Devices, Central South University, 932 South Lushan Road, Changsha, 410083, Hunan, People's Republic of China
| | - Xiulian Fan
- School of Physics and Electronics, Hunan Key Laboratory of Nanophotonics and Devices, Central South University, 932 South Lushan Road, Changsha, 410083, Hunan, People's Republic of China
| | - Cheng Li
- School of Physics and Electronics, Hunan Key Laboratory of Nanophotonics and Devices, Central South University, 932 South Lushan Road, Changsha, 410083, Hunan, People's Republic of China
| | - Tiezheng Lv
- Research Institute of Automobile Parts Technology, Hunan Institute of Technology, Hengyang, 421002, People's Republic of China
| | - Jinming Jiang
- Department of Basic Sciences, Air Force Engineering University, Xi'an, 710051, People's Republic of China
- State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Carbon/Carbon Composites Research Center, Xi'an, 710072, People's Republic of China
| | - Zhihui Chen
- School of Physics and Electronics, Hunan Key Laboratory of Nanophotonics and Devices, Central South University, 932 South Lushan Road, Changsha, 410083, Hunan, People's Republic of China
| | - Yu Zhou
- School of Physics and Electronics, Hunan Key Laboratory of Nanophotonics and Devices, Central South University, 932 South Lushan Road, Changsha, 410083, Hunan, People's Republic of China.
- Powder Metallurgy Research Institute and State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083, People's Republic of China.
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, Fujian, People's Republic of China.
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Babar ZUD, Raza A, Cassinese A, Iannotti V. Two Dimensional Heterostructures for Optoelectronics: Current Status and Future Perspective. Molecules 2023; 28:molecules28052275. [PMID: 36903520 PMCID: PMC10005545 DOI: 10.3390/molecules28052275] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/31/2022] [Revised: 02/05/2023] [Accepted: 02/16/2023] [Indexed: 03/05/2023] Open
Abstract
Researchers have found various families of two-dimensional (2D) materials and associated heterostructures through detailed theoretical work and experimental efforts. Such primitive studies provide a framework to investigate novel physical/chemical characteristics and technological aspects from micro to nano and pico scale. Two-dimensional van der Waals (vdW) materials and their heterostructures can be obtained to enable high-frequency broadband through a sophisticated combination of stacking order, orientation, and interlayer interactions. These heterostructures have been the focus of much recent research due to their potential applications in optoelectronics. Growing the layers of one kind of 2D material over the other, controlling absorption spectra via external bias, and external doping proposes an additional degree of freedom to modulate the properties of such materials. This mini review focuses on current state-of-the-art material design, manufacturing techniques, and strategies to design novel heterostructures. In addition to a discussion of fabrication techniques, it includes a comprehensive analysis of the electrical and optical properties of vdW heterostructures (vdWHs), particularly emphasizing the energy-band alignment. In the following sections, we discuss specific optoelectronic devices, such as light-emitting diodes (LEDs), photovoltaics, acoustic cavities, and biomedical photodetectors. Furthermore, this also includes a discussion of four different 2D-based photodetector configurations according to their stacking order. Moreover, we discuss the challenges that remain to be addressed in order to realize the full potential of these materials for optoelectronics applications. Finally, as future perspectives, we present some key directions and express our subjective assessment of upcoming trends in the field.
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Affiliation(s)
- Zaheer Ud Din Babar
- Scuola Superiore Meridionale (SSM), University of Naples Federico II, Largo S. Marcellino 10, 80138 Naples, Italy
- Department of Physics “Ettore Pancini”, University of Naples Federico II, Piazzale Tecchio 80, 80125 Naples, Italy
| | - Ali Raza
- Department of Physics “Ettore Pancini”, University of Naples Federico II, Piazzale Tecchio 80, 80125 Naples, Italy
| | - Antonio Cassinese
- Department of Physics “Ettore Pancini”, University of Naples Federico II, Piazzale Tecchio 80, 80125 Naples, Italy
- CNR–SPIN (Institute for Superconductors, Oxides and Other Innovative Materials and Devices), Piazzale V. Tecchio 80, 80125 Naples, Italy
| | - Vincenzo Iannotti
- Department of Physics “Ettore Pancini”, University of Naples Federico II, Piazzale Tecchio 80, 80125 Naples, Italy
- CNR–SPIN (Institute for Superconductors, Oxides and Other Innovative Materials and Devices), Piazzale V. Tecchio 80, 80125 Naples, Italy
- Correspondence:
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Huan Y, Luo T, Han X, Ge J, Cui F, Zhu L, Hu J, Zheng F, Zhao X, Wang L, Wang J, Zhang Y. Composition-Controllable Syntheses and Property Modulations from 2D Ferromagnetic Fe 5 Se 8 to Metallic Fe 3 Se 4 Nanosheets. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2207276. [PMID: 36263871 DOI: 10.1002/adma.202207276] [Citation(s) in RCA: 12] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/10/2022] [Revised: 09/27/2022] [Indexed: 06/16/2023]
Abstract
Exploring new-type 2D magnetic materials with high magnetic transition temperature and robust air stability has attracted wide attention for developing innovative spintronic devices. Recently, intercalation of native metal atoms into the van der Waals gaps of 2D layered transition metal dichalcogenides (TMDs) has been developed to form 2D non-layered magnetic TMDs, while only succeeded in limited systems (e.g., Cr2 S3 , Cr5 Te8 ). Herein, composition-controllable syntheses of 2D non-layered iron selenide nanosheets (25% Fe-intercalated triclinic Fe5 Se8 and 50% Fe-intercalated monoclinic Fe3 Se4 ) are firstly reported, via a robust chemical vapor deposition strategy. Specifically, the 2D Fe5 Se8 exhibits intrinsic room-temperature ferromagnetic property, which is explained by the change of electron spin states from layered 1T'-FeSe2 to non-layered Fe-intercalated Fe5 Se8 based on density functional theory calculations. In contrast, the ultrathin Fe3 Se4 presents novel metallic features comparable with that of metallic TMDs. This work hereby sheds light on the composition-controllable synthesis and fundamental property exploration of 2D self-intercalation induced novel TMDs compounds, by propelling their application explorations in nanoelectronics and spintronics-related fields.
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Affiliation(s)
- Yahuan Huan
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Tiantian Luo
- Siyuan Laboratory, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, 510632, P. R. China
| | - Xiaocang Han
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Jun Ge
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Fangfang Cui
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Lijie Zhu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Jingyi Hu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Feipeng Zheng
- Siyuan Laboratory, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, 510632, P. R. China
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Lili Wang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, 100084, P. R. China
| | - Jian Wang
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, P. R. China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, P. R. China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Beijing Academy of Quantum Information Sciences, Beijing, 100193, P. R. China
| | - Yanfeng Zhang
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
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2D RhTe Monolayer: A highly efficient electrocatalyst for oxygen reduction reaction. J Colloid Interface Sci 2023; 629:971-980. [DOI: 10.1016/j.jcis.2022.09.023] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/19/2022] [Revised: 08/24/2022] [Accepted: 09/04/2022] [Indexed: 11/21/2022]
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9
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Yeoh KH, Chew KH, Chang YHR, Yoon TL, Ong DS. The effect of vacancy defects on the electromechanical properties of monolayer NiTe 2 from first principles calculations. Phys Chem Chem Phys 2022; 24:29952-29960. [PMID: 36468660 DOI: 10.1039/d2cp05102h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
The electromechanical properties of monolayer 1-T NiTe2 under charge actuation were investigated using first-principles density functional theory (DFT) calculations. Monolayer 1-T NiTe2 in its pristine form has a work area density per cycle of up to 5.38 MJ m-3 nm upon charge injection and it can generate a strain and a stress of 1.51% and 0.96 N m-1, respectively. We found that defects in the form of vacancies can be exploited to modulate the electromechanical properties of this material. The presence of Ni-vacancies can further enhance the generated stress by 22.5%. On the other hand, with Te-vacancies, it is possible to improve the work area density per cycle by at least 145% and also to enhance the induced strain from 1.51% to 2.92%. The effect of charge polarity on the contraction and expansion of monolayer 1T-NiTe2 was investigated. Due to its excellent environmental stability and good electromechanical properties, monolayer NiTe2 is considered to be a promising electrode material for electroactive polymer (EAP) based actuators.
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Affiliation(s)
- K H Yeoh
- Department of Electrical and Electronic Engineering, Lee Kong Chian Faculty of Engineering and Science, Universiti Tunku Abdul Rahman, 43000 Kajang, Selangor, Malaysia. .,Center for Photonics and Advanced Material Research, Lee Kong Chian Faculty of Engineering and Science, Universiti Tunku Abdul Rahman, 43000 Kajang, Selangor, Malaysia
| | - K-H Chew
- Zhejiang Expo New Materials Co. Ltd., 1066, Xincheng Times Avenue, Longgang, Wenzhou 325802, China.,Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, China
| | - Y H R Chang
- Faculty of Applied Sciences, Universiti Teknologi MARA, Cawangan Sarawak, 94300 Samarahan, Sarawak, Malaysia.
| | - T L Yoon
- School of Physics, Universiti Sains Malaysia, 11800 USM, Penang, Malaysia
| | - D S Ong
- Faculty of Engineering, Multimedia University, Persiaran Multimedia, 63100 Cyberjaya, Selangor, Malaysia
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10
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Das S, Pal S, Kumbhakar P, Tromer RM, Negedu SD, Galvao DS, Das S, Tiwary CS, Ray SK. Vacancy-Mediated Anomalous Emission Characteristics of Size-Confined Semiconducting CoTe 2. ACS APPLIED MATERIALS & INTERFACES 2022; 14:53139-53149. [PMID: 36394999 DOI: 10.1021/acsami.2c14318] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Transition-metal tellurides (TMTs) are promising materials for "post-graphene age" nanoelectronics and energy storage applications owing to their industry-standard compatibility, high electron mobility, large spin-orbit coupling (SOC), etc. However, tellurium (Te) having a larger ionic radius (Z = 52) and broader d-bands endows TMTs with semimetallic nature, restricting their application in photonic and optoelectronic domains. In this work, we report the optical properties of the quantum-confined semiconducting phase of cobalt ditelluride (CoTe2) for the first time, exhibiting excellent two-color band photoabsorption attributes covering the UV-visible and near-infrared regions. Furthermore, novel excitonic resonances (X) of size-varying CoTe2 nanocrystals and quantum dots (QDs) are indicated by their temperature-dependent emission characteristics, which are attributed to the splitting of band edge states via confinement. On the other hand, the sudden rupture of the large-area CoTe2 nanosheets via ultrasonication incorporates Co vacancy-mediated localized trap states within the band gap, which is attributed to the superior room-temperature photoluminescence (PL) quantum yield of QDs and further corroborated using Raman analysis and atomistic density functional theory (DFT) simulations. Most interestingly, the excitonic peak of CoTe2 QDs reveals a unique positive-to-negative thermal quenching transition phenomenon, owing to the thermal activation of nonradiative surface trap states. These results introduce an exciting approach for the defect-mediated color-saturated light emission that paves the way for solution-processed telluride-based QD light-emitting diodes.
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Affiliation(s)
- Shreyasi Das
- School of Nano Science and Technology, IIT Kharagpur, Kharagpur, West Bengal721302, India
| | - Sourabh Pal
- Advanced Technology Development Centre, IIT Kharagpur, Kharagpur, West Bengal721302, India
| | - Partha Kumbhakar
- Department of Metallurgical and Materials Engineering, IIT Kharagpur, Kharagpur, West Bengal721302, India
| | - Raphael M Tromer
- Applied Physics Department, University of Campinas, Campinas, Sao Paulo13083970, Brazil
| | - Solomon Demiss Negedu
- Department of Metallurgical and Materials Engineering, IIT Kharagpur, Kharagpur, West Bengal721302, India
| | - Douglas S Galvao
- Applied Physics Department, University of Campinas, Campinas, Sao Paulo13083970, Brazil
| | - Soumen Das
- School of Medical Science and Technology, IIT Kharagpur, Kharagpur, West Bengal721302, India
| | - Chandra Sekhar Tiwary
- Department of Metallurgical and Materials Engineering, IIT Kharagpur, Kharagpur, West Bengal721302, India
| | - Samit K Ray
- Department of Physics, IIT Kharagpur, Kharagpur, West Bengal721302, India
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11
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Zhang G, Wu H, Zhang L, Yang L, Xie Y, Guo F, Li H, Tao B, Wang G, Zhang W, Chang H. Two-Dimensional Van Der Waals Topological Materials: Preparation, Properties, and Device Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2204380. [PMID: 36135779 DOI: 10.1002/smll.202204380] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/15/2022] [Revised: 08/23/2022] [Indexed: 06/16/2023]
Abstract
Over the past decade, 2D van der Waals (vdW) topological materials (TMs), including topological insulators and topological semimetals, which combine atomically flat 2D layers and topologically nontrivial band structures, have attracted increasing attention in condensed-matter physics and materials science. These easily cleavable and integrated TMs provide the ideal platform for exploring topological physics in the 2D limit, where new physical phenomena may emerge, and represent a potential to control and investigate exotic properties and device applications in nanoscale topological phases. However, multifaced efforts are still necessary, which is the prerequisite for the practical application of 2D vdW TMs. Herein, this review focuses on the preparation, properties, and device applications of 2D vdW TMs. First, three common preparation strategies for 2D vdW TMs are summarized, including single crystal exfoliation, chemical vapor deposition, and molecular beam epitaxy. Second, the origin and regulation of various properties of 2D vdW TMs are introduced, involving electronic properties, transport properties, optoelectronic properties, thermoelectricity, ferroelectricity, and magnetism. Third, some device applications of 2D vdW TMs are presented, including field-effect transistors, memories, spintronic devices, and photodetectors. Finally, some significant challenges and opportunities for the practical application of 2D vdW TMs in 2D topological electronics are briefly addressed.
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Affiliation(s)
- Gaojie Zhang
- Quantum-Nano Matter and Device Lab, Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Hao Wu
- Quantum-Nano Matter and Device Lab, Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Liang Zhang
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Li Yang
- Quantum-Nano Matter and Device Lab, Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Yuanmiao Xie
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Fei Guo
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Hongda Li
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Boran Tao
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Guofu Wang
- Liuzhou Key Laboratory for New Energy Vehicle Power Lithium Battery, School of Microelectronics and Engineering, Guangxi University of Science and Technology, Liuzhou, 545006, China
| | - Wenfeng Zhang
- Quantum-Nano Matter and Device Lab, Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Shenzhen R&D Center of Huazhong University of Science and Technology (HUST), Shenzhen, 518000, China
| | - Haixin Chang
- Quantum-Nano Matter and Device Lab, Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
- Shenzhen R&D Center of Huazhong University of Science and Technology (HUST), Shenzhen, 518000, China
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12
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Samal R, Debbarma C, Rout CS. Transition metal tellurides/2D Ti3C2Tx MXene: Investigation towards active alkaline hydrogen evolution reaction. Catal Today 2022. [DOI: 10.1016/j.cattod.2022.08.022] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
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13
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Pan S, Hong M, Zhu L, Quan W, Zhang Z, Huan Y, Yang P, Cui F, Zhou F, Hu J, Zheng F, Zhang Y. On-Site Synthesis and Characterizations of Atomically-Thin Nickel Tellurides with Versatile Stoichiometric Phases through Self-Intercalation. ACS NANO 2022; 16:11444-11454. [PMID: 35786839 DOI: 10.1021/acsnano.2c05570] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Self-intercalation of native metal atoms in two-dimensional (2D) transition metal dichalcogenides has received rapidly increasing interest, due to the generation of intriguing structures and exotic physical properties, however, only reported in limited materials systems. An emerging type-II Dirac semimetal, NiTe2, has inspired great attention at the 2D thickness region, but has been rarely achieved so far. Herein, we report the direct synthesis of mono- to few-layer Ni-tellurides including 1T-NiTe2 and Ni-rich stoichiometric phases on graphene/SiC(0001) substrates under ultra-high-vacuum conditions. Differing from previous chemical vapor deposition growth accompanied with transmission electron microscopy imaging, this work combines precisely tailored synthesis with on-site atomic-scale scanning tunneling microscopy observations, offering us visual information about the phase modulations of Ni-tellurides from 1T-phase NiTe2 to self-intercalated Ni3Te4 and Ni5Te6. The synthesis of Ni self-intercalated NixTey compounds is explained to be mediated by the high metal chemical potential under Ni-rich conditions, according to density functional theory calculations. More intriguingly, the emergence of superconductivity in bilayer NiTe2 intercalated with 50% Ni is also predicted, arising from the enhanced electron-phonon coupling strength after the self-intercalation. This work provides insight into the direct synthesis and stoichiometric phase modulation of 2D layered materials, enriching the family of self-intercalated materials and propelling their property explorations.
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Affiliation(s)
- Shuangyuan Pan
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Min Hong
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Lijie Zhu
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Wenzhi Quan
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
| | - Zehui Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Yahuan Huan
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Pengfei Yang
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
| | - Fangfang Cui
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Fan Zhou
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
| | - Jingyi Hu
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
| | - Feipeng Zheng
- Siyuan Laboratory, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou 510632, People's Republic of China
| | - Yanfeng Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
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14
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Qi Z, Zhai X, Jiang X, Xu X, Fan C, Shen L, Xiao Q, Jiang S, Deng Q, Liu H, Jing F, Zhang Q. Epitaxy of NiTe 2 on WS 2 for the p-Type Schottky Contact and Increased Photoresponse. ACS APPLIED MATERIALS & INTERFACES 2022; 14:31121-31130. [PMID: 35767657 DOI: 10.1021/acsami.2c06968] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have great potential applications in the electronic and optoelectronic devices. Nevertheless, due to the difficulty in the efficient doping of atomic-thickness TMDCs or Fermi level pinning (FLP) effects at the metal/semiconductor interface, most TMDC devices exhibit the n-type conduction polarity, which significantly limits their functional applications based on the p-n junction. Here, 2D semi-metal NiTe2 nanosheets were epitaxially grown on the WS2 monolayer by a two-step chemical vapor deposition route. The microstructure and optical characterizations confirm that the vertically stacked NiTe2/WS2 heterostructures are formed by van der Waals epitaxy. Interestingly, p-type WS2 field-effect transistors can be obtained with the hole mobility of ∼4.22 cm2/V·s, when the epitaxial NiTe2 sheets act as the source/drain electrodes. This is attributed to the decreased FLP effect and hence the low potential barrier for holes at the van der Waals contacts. Furthermore, the photodetectors based on the heterostructures show a 2 orders of magnitude increase in the switch ratio, responsivity, and detectivity and a 1 order of magnitude increase in the rise and decay speeds relative to those based on pristine WS2. This work paves the way to realize the p-type contact for monolayer WS2 with significantly enhanced optoelectronic performance.
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Affiliation(s)
- Zhuodong Qi
- School of Physics and Electronics, and Hunan Key Laboratory of Two-Dimensional Materials, Hunan University, Changsha 410082, P. R. China
| | - Xiaokun Zhai
- Tianjin Key Laboratory of Functional Crystal Materials, Institute of Functional Crystal, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, P. R. China
| | - Xiaohong Jiang
- Key Laboratory for Special Functional Materials, Collaborative Innovation Center of Nano Functional Materials and Applications, Henan University, Kaifeng 475004, P. R. China
| | - Xing Xu
- School of Physics and Electronics, and Hunan Key Laboratory of Two-Dimensional Materials, Hunan University, Changsha 410082, P. R. China
| | - Chao Fan
- School of Physics and Electronics, and Hunan Key Laboratory of Two-Dimensional Materials, Hunan University, Changsha 410082, P. R. China
| | - Lei Shen
- School of Physics and Electronics, and Hunan Key Laboratory of Two-Dimensional Materials, Hunan University, Changsha 410082, P. R. China
| | - Qin Xiao
- School of Physics and Electronics, and Hunan Key Laboratory of Two-Dimensional Materials, Hunan University, Changsha 410082, P. R. China
| | - Sha Jiang
- School of Physics and Electronics, and Hunan Key Laboratory of Two-Dimensional Materials, Hunan University, Changsha 410082, P. R. China
| | - Qi Deng
- School of Physics and Electronics, and Hunan Key Laboratory of Two-Dimensional Materials, Hunan University, Changsha 410082, P. R. China
| | - Hongjun Liu
- Tianjin Key Laboratory of Functional Crystal Materials, Institute of Functional Crystal, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, P. R. China
| | - Fangli Jing
- Tianjin Key Laboratory of Functional Crystal Materials, Institute of Functional Crystal, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, P. R. China
| | - Qinglin Zhang
- School of Physics and Electronics, and Hunan Key Laboratory of Two-Dimensional Materials, Hunan University, Changsha 410082, P. R. China
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15
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Wang P, Wen Y, Zhao X, Zhai B, Du R, Cheng M, Liu Z, He J, Shi J. Controllable Synthesis Quadratic-Dependent Unsaturated Magnetoresistance of Two-Dimensional Nonlayered Fe 7S 8 with Robust Environmental Stability. ACS NANO 2022; 16:8301-8308. [PMID: 35467830 DOI: 10.1021/acsnano.2c02267] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Two-dimensional (2D) iron chalcogenides (FeX, X = S, Se, Te) are emerging as an appealing class of materials for a wide range of research topics, including electronics, spintronics, and catalysis. However, the controlled syntheses and intrinsic property explorations of such fascinating materials still remain daunting challenges, especially for 2D nonlayered Fe7S8 with mixed-valence states and high conductivity. Herein, we design a general and temperature-mediated chemical vapor deposition (CVD) approach to synthesize ultrathin and large-domain Fe7S8 nanosheets on mica substrates, with the thickness down to ∼4.4 nm (2 unit-cell). Significantly, we uncover a quadratic-dependent unsaturated magnetoresistance (MR) with out-of-plane anisotropy in 2D Fe7S8, thanks to its ultrahigh crystalline quality and high conductivity (∼2.7 × 105 S m-1 at room temperature and ∼1.7 × 106 S m-1 at 2 K). More interestingly, the CVD-synthesized 2D Fe7S8 nanosheets maintain robust environmental stability for more than 8 months. These results hereby lay solid foundations for synthesizing 2D nonlayered iron chalcogenides with mixed-valence states and exploring fascinating quantum phenomena.
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Affiliation(s)
- Peng Wang
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Baoxing Zhai
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Ruofan Du
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
| | - Mo Cheng
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Jianping Shi
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
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16
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Zhang Y, Zheng G, Li A, Zhu X, Jiang J, Zhang Q, Deng L, Gao X, Ouyang F. Hexagonal Single-Crystal CoS Nanosheets: Controllable Synthesis and Tunable Oxygen Evolution Performance. Inorg Chem 2022; 61:7568-7578. [PMID: 35512266 DOI: 10.1021/acs.inorgchem.2c00734] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/17/2022]
Abstract
Cobalt-based sulfides with variable valence states and unique physical and chemical properties have shown great potential as oxygen evolution reaction (OER) catalysts for electrochemical water-splitting reactions. However, poor morphological characteristics and a small specific surface area limit its further application. Here, hexagonal single-crystal two-dimensional (2D) CoS nanosheets with different thicknesses are successfully prepared by an atmospheric-pressure chemical vapor deposition method. Because of the advantages of the 2D structure, more exposed catalytic active sites, better reactant adsorption ability, accelerated electron transfer, and enhanced electrical conductivities can be achieved from the thinnest 5 nm CoS nanosheets (CoS-5), significantly improving OER performance. The electrochemical tests manifest that CoS-5 show an overpotential of 290 mV at 10 mA cm-2 and a Tafel slope of 65.6 mV dec-1 in the OER in an alkaline solution, superior to those for other thicknesses of CoS, bulk CoS, and RuO2. For the mechanistic investigation, the lowest charge transfer resistance (Rct) and the highest double-layer capacitance (Cdl) were obtained for CoS-5, demonstrating the faster OER kinetics and the larger active area. Density functional theory calculations further reveal the enhanced density of states around the Fermi level and higher H2O molecule adsorption energy for thinner CoS nanosheets, promoting its intrinsic catalytic activity. Moreover, the two-electrode system with CoS-5 as the anode and Pt/C as the cathode requires only 1.56 V to attain 10 mA cm-2 in the overall water-splitting reaction. We believe that this study will provide a fresh view for thickness-dependent catalytic performance and offers a new material for the study of electronic and energy devices.
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Affiliation(s)
- Yue Zhang
- School of Physics and Electronics, Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, and Hunan Key Laboratory of Nanophotonics and Devices, Central South University, Changsha 410083, People's Republic of China
| | - Guibo Zheng
- School of Physics and Electronics, Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, and Hunan Key Laboratory of Nanophotonics and Devices, Central South University, Changsha 410083, People's Republic of China
| | - Aolin Li
- State Key Laboratory of Powder Metallurgy and Powder Metallurgy Research Institute, Central South University, Changsha 410083, People's Republic of China
| | - Xukun Zhu
- State Key Laboratory of Powder Metallurgy and Powder Metallurgy Research Institute, Central South University, Changsha 410083, People's Republic of China
| | - Junjie Jiang
- School of Physics and Electronics, Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, and Hunan Key Laboratory of Nanophotonics and Devices, Central South University, Changsha 410083, People's Republic of China
| | - Qi Zhang
- School of Physics and Electronics, Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, and Hunan Key Laboratory of Nanophotonics and Devices, Central South University, Changsha 410083, People's Republic of China
| | - Lianwen Deng
- School of Physics and Electronics, Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, and Hunan Key Laboratory of Nanophotonics and Devices, Central South University, Changsha 410083, People's Republic of China
| | - Xiaohui Gao
- School of Physics and Electronics, Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, and Hunan Key Laboratory of Nanophotonics and Devices, Central South University, Changsha 410083, People's Republic of China
| | - Fangping Ouyang
- School of Physics and Electronics, Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, and Hunan Key Laboratory of Nanophotonics and Devices, Central South University, Changsha 410083, People's Republic of China.,State Key Laboratory of Powder Metallurgy and Powder Metallurgy Research Institute, Central South University, Changsha 410083, People's Republic of China.,School of Physics and Technology, Xinjiang University, Urumqi 830046, People's Republic of China
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17
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Deng Y, Yun S, Dang J, Zhang Y, Dang C, Wang Y, Liu Z, Gao Z. A multi-dimensional hierarchical strategy building melamine sponge-derived tetrapod carbon supported cobalt-nickel tellurides 0D/3D nanohybrids for boosting hydrogen evolution and triiodide reduction reaction. J Colloid Interface Sci 2022; 624:650-669. [DOI: 10.1016/j.jcis.2022.05.147] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/29/2022] [Revised: 05/23/2022] [Accepted: 05/25/2022] [Indexed: 01/03/2023]
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18
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Yao W, Tian C, Yang C, Xu J, Meng Y, Manke I, Chen N, Wu Z, Zhan L, Wang Y, Chen R. P-Doped NiTe 2 with Te-Vacancies in Lithium-Sulfur Batteries Prevents Shuttling and Promotes Polysulfide Conversion. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2106370. [PMID: 35019192 DOI: 10.1002/adma.202106370] [Citation(s) in RCA: 63] [Impact Index Per Article: 31.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/14/2021] [Revised: 01/08/2022] [Indexed: 06/14/2023]
Abstract
Lithium-sulfur (Li-S) batteries have been hindered by the shuttle effect and sluggish polysulfide conversion kinetics. Here, a P-doped nickel tellurium electrocatalyst with Te-vacancies (P⊂NiTe2- x ) anchored on maize-straw carbon (MSC) nanosheets, served as a functional layer (MSC/P⊂NiTe2- x ) on the separator of high-performance Li-S batteries. The P⊂NiTe2- x electrocatalyst enhanced the intrinsic conductivity, strengthened the chemical affinity for polysulfides, and accelerated sulfur redox conversion. The MSC nanosheets enabled NiTe2 nanoparticle dispersion and Li+ diffusion. In situ Raman and ex situ X-ray absorption spectra confirmed that the MSC/P⊂NiTe2- x restrained the shuttle effect and accelerated the redox conversion. The MSC/P⊂NiTe2- x -based cell has a cyclability of 637 mAh g-1 at 4 C over 1800 cycles with a degradation rate of 0.0139% per cycle, high rate performance of 726 mAh g-1 at 6 C, and a high areal capacity of 8.47 mAh cm-2 under a sulfur configuration of 10.2 mg cm-2 , and a low electrolyte/sulfur usage ratio of 3.9. This work demonstrates that vacancy-induced doping of heterogeneous atoms enables durable sulfur electrochemistry and can impact future electrocatalytic designs related to various energy-storage applications.
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Affiliation(s)
- Weiqi Yao
- State Key Laboratory of Chemical Engineering, East China University of Science and Technology, Shanghai, 200237, China
| | - Chengxiang Tian
- Department of Mechanical Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Chao Yang
- Helmholtz Centre Berlin for Materials and Energy, Hahn-Meitner-Platz 1, 14109, Berlin, Germany
| | - Jie Xu
- State Key Laboratory of Chemical Engineering, East China University of Science and Technology, Shanghai, 200237, China
| | - Yufeng Meng
- Shanghai Institute of Space Power Sources, Shanghai, 200245, China
| | - Ingo Manke
- Helmholtz Centre Berlin for Materials and Energy, Hahn-Meitner-Platz 1, 14109, Berlin, Germany
| | - Nan Chen
- Beijing Key Laboratory of Environmental Science and Engineering, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Ziling Wu
- State Key Laboratory of Chemical Engineering, East China University of Science and Technology, Shanghai, 200237, China
| | - Liang Zhan
- State Key Laboratory of Chemical Engineering, East China University of Science and Technology, Shanghai, 200237, China
| | - Yanli Wang
- State Key Laboratory of Chemical Engineering, East China University of Science and Technology, Shanghai, 200237, China
| | - Renjie Chen
- Beijing Key Laboratory of Environmental Science and Engineering, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, China
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19
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He W, Liu H, Cheng J, Li Y, Liu C, Chen C, Zhao J, Xin HL. Modulating the Electronic Structure of Nickel Sulfide Electrocatalysts by Chlorine Doping toward Highly Efficient Alkaline Hydrogen Evolution. ACS APPLIED MATERIALS & INTERFACES 2022; 14:6869-6875. [PMID: 35099169 DOI: 10.1021/acsami.1c23251] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The exploration of indurative and stable low-cost catalysts for hydrogen evolution reaction (HER) is of great importance for hydrogen energy economy, but it still faces challenges. Herein, we report a Cl-doped Ni3S2 (Cl-Ni3S2) nanoplate catalyst vertically grown on Ni foam with outstanding activity and durability for HER, which only requires an overpotential of 67 mV to reach a current density of 10 mA cm-2 in alkaline media and exhibits negligible degradation after 30 h of operation. Both the advanced X-ray absorption fine structure (XAFS) and density functional theory (DFT) calculation validate that Cl doping can optimize the electronic structure and the intrinsic activity of Ni3S2. This study devoted to the revelation of the impact of ionic doping on the activity of catalysts at the atomic scale can provide the direction for the rational design of novel and advanced HER electrocatalysts.
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Affiliation(s)
- Wenjun He
- Key Laboratory of Special Functional Materials for Ecological Environment and Information (Hebei University of Technology), Ministry of Education, Tianjin 300130, People's Republic of China
| | - Hui Liu
- Key Laboratory of Special Functional Materials for Ecological Environment and Information (Hebei University of Technology), Ministry of Education, Tianjin 300130, People's Republic of China
- Department of Physics and Astronomy, University of California, Irvine, California 92697, United States
| | - Jianing Cheng
- Key Laboratory of Special Functional Materials for Ecological Environment and Information (Hebei University of Technology), Ministry of Education, Tianjin 300130, People's Republic of China
| | - Ying Li
- Key Laboratory of Special Functional Materials for Ecological Environment and Information (Hebei University of Technology), Ministry of Education, Tianjin 300130, People's Republic of China
| | - Caichi Liu
- Key Laboratory of Special Functional Materials for Ecological Environment and Information (Hebei University of Technology), Ministry of Education, Tianjin 300130, People's Republic of China
| | - Cong Chen
- Key Laboratory of Special Functional Materials for Ecological Environment and Information (Hebei University of Technology), Ministry of Education, Tianjin 300130, People's Republic of China
| | - Jianling Zhao
- Key Laboratory of Special Functional Materials for Ecological Environment and Information (Hebei University of Technology), Ministry of Education, Tianjin 300130, People's Republic of China
| | - Huolin L Xin
- Department of Physics and Astronomy, University of California, Irvine, California 92697, United States
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20
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Pham PV, Bodepudi SC, Shehzad K, Liu Y, Xu Y, Yu B, Duan X. 2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges. Chem Rev 2022; 122:6514-6613. [PMID: 35133801 DOI: 10.1021/acs.chemrev.1c00735] [Citation(s) in RCA: 102] [Impact Index Per Article: 51.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro-nano-pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.
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Affiliation(s)
- Phuong V Pham
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Srikrishna Chanakya Bodepudi
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Khurram Shehzad
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Yuan Liu
- School of Physics and Electronics, Hunan University, Hunan 410082, China
| | - Yang Xu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Bin Yu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles (UCLA), Los Angeles, California 90095-1569, United States
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21
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Hussain T, Hussain M, Hussain S, Kaseem M. Microwave-assisted synthesis of NiTe2 photocatalyst as a facile and scalable approach for energy-efficient photocatalysis and detoxification of harmful organic dyes. Sep Purif Technol 2022. [DOI: 10.1016/j.seppur.2021.120025] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/25/2022]
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22
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Zhao L, Yu G, Huang X, Chen W. Realizing Efficient Catalytic Performance and High Selectivity for Oxygen Reduction Reaction on a 2D Ni 2SbTe 2 Monolayer. Inorg Chem 2022; 61:2284-2291. [PMID: 35044752 DOI: 10.1021/acs.inorgchem.1c03662] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
One of the immediate challenges for the large-scale commercialization of hydrogen-based fuel cells is to develop cost-effective electrocatalysts to enable cathodic oxygen reduction reaction (ORR). Herein, we focus on the potential of the two-dimensional (2D) ternary chalcogenide Ni2SbTe2 monolayer as a high-performance electrocatalyst for the ORR using density function theory. Our computed results reveal that there are an obvious hybridization and electron transfer between the O 2p and Te 5p orbitals, which can activate the adsorbed oxygen and trigger the whole ORR process, with an overpotential as low as 0.33 V. In addition, the adsorption capacity of the monolayer surface for oxygen molecules can be effectively enhanced by doping with Fe or Co atoms. The Ni2SbTe2 monolayers doped with Fe or Co atoms not only maintain their original excellent ORR catalytic activity but also improve selectivity toward the four-electron (4e) reduction pathway. We highly anticipate that this work can provide excellent candidates and new ideas for designing low-cost and high-performance ORR catalysts to replace noble metal Pt-based catalysts in fuel cells.
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Affiliation(s)
- Lusi Zhao
- Laboratory of Theoretical and Computational Chemistry, Institute of Theoretical Chemistry, College of Chemistry, Jilin University, Changchun 130023, China
| | - Guangtao Yu
- Laboratory of Theoretical and Computational Chemistry, Institute of Theoretical Chemistry, College of Chemistry, Jilin University, Changchun 130023, China.,Engineering Research Center of Industrial Biocatalysis, Fujian Province University, Fujian Provincial Key Laboratory of Advanced Materials Oriented Chemical Engineering, College of Chemistry and Materials Science, Fujian Normal University, Fuzhou 350007, China.,Fujian Provincial Key Laboratory of Theoretical and Computational Chemistry, Xiamen University, Xiamen 361005, China
| | - Xuri Huang
- Laboratory of Theoretical and Computational Chemistry, Institute of Theoretical Chemistry, College of Chemistry, Jilin University, Changchun 130023, China
| | - Wei Chen
- Laboratory of Theoretical and Computational Chemistry, Institute of Theoretical Chemistry, College of Chemistry, Jilin University, Changchun 130023, China.,Engineering Research Center of Industrial Biocatalysis, Fujian Province University, Fujian Provincial Key Laboratory of Advanced Materials Oriented Chemical Engineering, College of Chemistry and Materials Science, Fujian Normal University, Fuzhou 350007, China.,Fujian Provincial Key Laboratory of Theoretical and Computational Chemistry, Xiamen University, Xiamen 361005, China
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23
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Di B, Zhang P, Yin H, Han P, Wu H, Zhang G, Jin W, Wen X, Zhang W, Chang H. Highly-tunable ferromagnetism in Cr-doped layered van der Waals NiTe 2 crystals with high air stability. CrystEngComm 2022. [DOI: 10.1039/d2ce00734g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
In the present work, tunable ferromagnetism can be introduced in NiTe2 crystals by Cr doping with high air-stability.
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Affiliation(s)
- Boyuan Di
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Pengzhen Zhang
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Hongfei Yin
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Peng Han
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Hao Wu
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Gaojie Zhang
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Wen Jin
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Xiaokun Wen
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Wenfeng Zhang
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Haixin Chang
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
- Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
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24
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Cheng M, Zhao X, Zeng Y, Wang P, Wang Y, Wang T, Pennycook SJ, He J, Shi J. Phase-Tunable Synthesis and Etching-Free Transfer of Two-Dimensional Magnetic FeTe. ACS NANO 2021; 15:19089-19097. [PMID: 34697943 DOI: 10.1021/acsnano.1c05738] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) Fe-chalcogenides (e.g., FeS, FeSe, and FeTe, etc.) have sparked extensive interest due to their rich phase diagrams including superconductivity, magnetism, and topological state, as well as versatile applications in electronic devices and energy related fields. However, the phase-tunable synthesis and green transfer of such fascinating materials still remain challenging. Herein, we develop a temperature-mediated chemical vapor deposition (CVD) approach to grow ultrathin nonlayered hexagonal and layered tetragonal FeTe nanosheets on mica substrates, with their thicknesses down to ∼2.3 and ∼4.0 nm, respectively. Interestingly, we have observed exciting ferromagnetism with the Curie temperature approaching ∼300 K and high conductivity (∼1.96 × 105 S m-1) in 2D hexagonal FeTe. More significantly, we have designed a swift, high-efficiency, and etching-free method for the transfer of 2D FeTe nanosheets onto arbitrary substrates, and such a transfer strategy enables the cyclic utilization of growth substrates. These results should propel the further development of phase-tunable synthesis and green transfer of 2D Fe-chalcogenides, as well as their potential applications in spintronic devices.
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Affiliation(s)
- Mo Cheng
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Yan Zeng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Peng Wang
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
| | - Yuzhu Wang
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
| | - Ti Wang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Stephen John Pennycook
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Jianping Shi
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
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25
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Han X, Jiang Q, Zhang M, Qin Z, Geng H, Sun C, Gu H. Pseudocapacitance-boosted ultrafast and stable Na-storage in NiTe 2 coupled with N-doped carbon nanosheets for advanced sodium-ion half/full batteries. Dalton Trans 2021; 50:17241-17248. [PMID: 34787140 DOI: 10.1039/d1dt03242a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Developing high-rate and durable anode materials for sodium-ion batteries (SIBs) is still a challenge because of the larger ion radius of sodium compared with the lithium ion during charge-discharge processes. Herein, NiTe2 coupled with N-doped carbon (NiTe2/NC) hexagonal nanosheets has been fabricated through a solvothermal and subsequent carbonisation strategy. This unique hexagonal nanosheet structure offers abundant active sites and contact area to the electrolyte, which could shorten the Na+ diffusion path. The heterostructured N-doping carbon improves the electrochemical conductivity and accelerates the kinetics of Na+ transportation. Electrochemical analysis shows that the charge-discharge process is controlled by the pseudocapacitive behavior thus leading to high-rate capability and long lifespan in half batteries. As expected, high capacities of 311 mA h g-1 to 217 mA h g-1 at 5 A g-1 to 10 A g-1 are maintained after 800 and 1200 cycles, respectively. Furthermore, a full battery equipped with a Na3V2(PO4)2O2F cathode and a NiTe2/NC anode offers a maximum energy density of 104 W h kg-1 and a maximum power density of 9116 W kg-1. The results clearly show that the NiTe2/NC hexagonal nanosheet with superior Na storage properties is an advanced new material for energy storage systems.
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Affiliation(s)
- Xu Han
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Jiangsu, 215123, P. R. China.
| | - Qilei Jiang
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Jiangsu, 215123, P. R. China.
| | - Mengling Zhang
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Jiangsu, 215123, P. R. China.
| | - Zheng Qin
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Jiangsu, 215123, P. R. China.
| | - Hongbo Geng
- School of Materials Engineering, Changshu Institute of Technology, Changshu, Jiangsu, 215500, China.
| | - Chencheng Sun
- School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu, Jiangsu, 215500, China.
| | - Hongwei Gu
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Jiangsu, 215123, P. R. China.
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26
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Ma L, Zhu J, Li W, Huang R, Wang X, Guo J, Choi JH, Lou Y, Wang D, Zou G. Immobilized Precursor Particle Driven Growth of Centimeter-Sized MoTe 2 Monolayer. J Am Chem Soc 2021; 143:13314-13324. [PMID: 34375083 DOI: 10.1021/jacs.1c06250] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/14/2023]
Abstract
Molybdenum ditelluride (MoTe2) has attracted ever-growing attention in recent years due to its novel characteristics in spintronics and phase-engineering, and an efficient and convenient method to achieve large-area high-quality film is an essential step toward electronic applications. However, the growth of large-area monolayer MoTe2 is challenging. Here, for the first time, we achieve the growth of a centimeter-sized monoclinic MoTe2 monolayer and manifest the mechanism of immobilized precursor particle driven growth. Microscopic characterizations reveal an obvious trend of immobilized precursor particles being consumed by the monolayer and continuing to provide a source for the growth of the monolayer. Time-of-flight secondary ion mass spectrometry verifies the attachment of hydroxide ions on the surface of the MoTe2 monolayer, thereby realizing the inhibition of crystal growth along the [001] zone axis and the continuous growth of the MoTe2 monolayer. The first-principles DFT calculations prove the mechanism of immobilized precursor particles and the absorption of hydroxide ions on the MoTe2 monolayer. The as-grown MoTe2 monolayer exhibits a surface roughness of 0.19 nm and average conductivity of 1.5 × 10-5 S/m, which prove the smoothness and uniformity of the MoTe2 monolayer. Temperature-dependent electrical measurements together with the transfer characteristic curves further demonstrate the typical semimetallic properties of monoclinic MoTe2. Our research elaborates the microscopic process of immobilized precursor particles to grow large-area MoTe2 monolayer and provides a new thinking about the growth of many other two-dimensional materials.
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Affiliation(s)
- Liang Ma
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215123 China
| | - Juntong Zhu
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215123 China
| | - Wei Li
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215123 China
| | - Rong Huang
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 China
| | - Xiangyi Wang
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215123 China
| | - Jun Guo
- Testing and Analysis Center, Soochow University, Suzhou 215123, China
| | - Jin-Ho Choi
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215123 China
| | - Yanhui Lou
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215123 China
| | - Dan Wang
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215123 China
| | - Guifu Zou
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215123 China
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27
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Guo Y, Kang L, Zeng Q, Xu M, Li L, Wu Y, Yang J, Zhang Y, Qi X, Zhao W, Zhang Z, Liu Z. Two-step chemical vapor deposition synthesis of NiTe 2-MoS 2 vertical junctions with improved MoS 2 transistor performance. NANOTECHNOLOGY 2021; 32:235204. [PMID: 33739939 DOI: 10.1088/1361-6528/abe963] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The primary challenge for the widespread application of two-dimensional (2D) electronics is to achieve satisfactory electrical contacts because, during the traditional metal integration process, difficulties arise due to inevitable physical damage and selective doping. Two-dimensional metal-semiconductor junctions have attracted attention for the potential application to achieve reliable electrical contacts in future atomically thin electronics. Here we demonstrate the van der Waals epitaxial growth of 2D NiTe2-MoS2 metal-semiconductor vertical junctions where the upper NiTe2 selectively nucleates at the edge of the underlying MoS2. Optical microscopy (OM), scanning electron microscopy (SEM), atomic force microscopy (AFM), and scanning transmission electron microscope (STEM) studies confirmed that NiTe2-MoS2 metal-semiconductor vertical junctions had been successfully synthesized. The electrical properties of the NiTe2-contacted MoS2 field-effect transistors (FETs) showed higher field-effect mobilities (μ FE) than those with deposited Cr/Au contacts. This study demonstrates an effective pathway to improved MoS2 transistor performance with metal-semiconductor junctions.
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Affiliation(s)
- Yuxi Guo
- School of Information Science and Technology, Northwest University, Xi'an, Shaanxi 710127, People's Republic of China. School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
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28
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High-frequency rectifiers based on type-II Dirac fermions. Nat Commun 2021; 12:1584. [PMID: 33707448 PMCID: PMC7952558 DOI: 10.1038/s41467-021-21906-w] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/08/2020] [Accepted: 02/18/2021] [Indexed: 11/21/2022] Open
Abstract
The advent of topological semimetals enables the exploitation of symmetry-protected topological phenomena and quantized transport. Here, we present homogeneous rectifiers, converting high-frequency electromagnetic energy into direct current, based on low-energy Dirac fermions of topological semimetal-NiTe2, with state-of-the-art efficiency already in the first implementation. Explicitly, these devices display room-temperature photosensitivity as high as 251 mA W−1 at 0.3 THz in an unbiased mode, with a photocurrent anisotropy ratio of 22, originating from the interplay between the spin-polarized surface and bulk states. Device performances in terms of broadband operation, high dynamic range, as well as their high sensitivity, validate the immense potential and unique advantages associated to the control of nonequilibrium gapless topological states via built-in electric field, electromagnetic polarization and symmetry breaking in topological semimetals. These findings pave the way for the exploitation of topological phase of matter for high-frequency operations in polarization-sensitive sensing, communications and imaging. High-frequency rectifiers at terahertz regime are pivotal components in modern communication, whereas the drawbacks in semiconductor junctions-based devices inhibit their usages. Here, the authors report electromagnetic rectification with high signal-to-noise ratio driven by chiral Bloch-electrons in type-II Dirac semimetal NiTe2-based device allowing for efficient THz detection.
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29
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Shi J, Huan Y, Zhao X, Yang P, Hong M, Xie C, Pennycook S, Zhang Y. Two-Dimensional Metallic Vanadium Ditelluride as a High-Performance Electrode Material. ACS NANO 2021; 15:1858-1868. [PMID: 33445868 DOI: 10.1021/acsnano.0c10250] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Two-dimensional (2D) metallic transition-metal dichalcogenides (MTMDCs) are considered as ideal electrode materials for enhancing the device performances of 2D semiconducting transition-metal dichalcogenides, due to their similar atomic structures and complementary electronic properties. Vanadium ditelluride (VTe2) behaves as a fascinating material in MTMDCs family, presenting room-temperature ferromagnetism, charge density waves order, and topological property. However, its practical applications in universal electrode/energy-related fields remain unexplored. Herein, we achieved the direct synthesis of ultrathin, large-domain, and thickness-tunable 1T-VTe2 nanosheets on an easily available mica substrate by chemical vapor deposition (CVD). We further uncover that the CVD-derived 1T-VTe2 can serve as a high-performance electrode material thanks to its ultrahigh conductivity. Accordingly, a 6 times higher field-effect mobility (∼47.5 cm2 V-1 s-1) was achieved in 1T-VTe2-contacted monolayer MoS2 devices than that using a conventional Ti/Au electrode (∼8.1 cm2 V-1 s-1). Moreover, the CVD-synthesized 1T-VTe2 nanosheets are revealed to present excellent electrocatalytic activity for hydrogen evolution reaction. These results should propel the direct application of CVD-grown 2D MTMDCs as high-performance electrode materials in all 2D materials related devices.
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Affiliation(s)
- Jianping Shi
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, China
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
| | - Yahuan Huan
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Xiaoxu Zhao
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Pengfei Yang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Min Hong
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Chunyu Xie
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
| | - Stephen Pennycook
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Yanfeng Zhang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
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