Two-Dimensional Metallic NiTe2 with Ultrahigh Environmental Stability, Conductivity, and Electrocatalytic Activity

Realization of Honeycomb Tellurene with Topological Edge States

The two-dimensional (2D) honeycomb lattice has attracted intensive research interest due to the appearance of Dirac-type band structures as the consequence of two sublattices in the honeycomb structure. Introducing strong spin-orbit coupling (SOC) leads to a gap opening at the Dirac point, transforming the honeycomb lattice into a 2D topological insulator as a platform for the quantum spin Hall effect (QSHE). In this work, we realize a 2D honeycomb-structured film with tellurium, the heaviest nonradioactive element in Group VI, namely, tellurene, via molecular beam epitaxy. We revealed the gap opening of 160 meV at the Dirac point due to the strong SOC in the honeycomb-structured tellurene by angle-resolved photoemission spectroscopy. The topological edge states of tellurene are detected via scanning tunneling microscopy/spectroscopy. These results demonstrate that tellurene is a novel 2D honeycomb lattice with strong SOC, and they unambiguously prove that tellurene is a promising candidate for a room-temperature QSHE system.

Solar enhanced oxygen evolution reaction with transition metal telluride

The photo-enhanced electrocatalytic method of oxygen evolution reaction (OER) shows promise for enhancing the effectiveness of clear energy generation through water splitting by using renewable and sustainable source of energy. However, despite benefits of photoelectrocatalytic (PEC) water splitting, its uses are constrained by its low efficiency as a result of charge carrier recombination, a large overpotential, and sluggish reaction kinetics. Here, we illustrate that Nickel telluride (NiTe) synthesized by hydrothermal methods can function as an extremely effective photo-coupled electrochemical oxygen evolution reaction (POER) catalyst. In this study, NiTe was synthesized by hydrothermal method at 145°C within just an hour of reaction time. In dark conditions, the NiTe deposited on carbon cloth substrate shows a small oxygen evolution reaction overpotential (261 mV) at a current density of 10 mA cm-2, a reduced Tafel slope (65.4 mV dec-1), and negligible activity decay after 12 h of chronoamperometry. By virtue of its enhanced photo response, excellent light harvesting ability, and increased interfacial kinetics of charge separation, the NiTe electrode under simulated solar illumination displays exceptional photoelectrochemical performance exhibiting overpotential of 165 mV at current density of 10 mA cm-2, which is about 96 mV less than on dark conditions. In addition, Density Functional Theory investigations have been carried out on the NiTe surface, the results of which demonstrated a greater adsorption energy for intermediate -OH on the catalyst site. Since the -OH adsorption on the catalyst site correlates to catalyst activation, it indicates the facile electrocatalytic activity of NiTe owing to favorable catalyst activation. DFT calculations also revealed the facile charge density redistribution following intermediate -OH adsorption on the NiTe surface. This work demonstrates that arrays of NiTe elongated nanostructure are a promising option for both electrochemical and photoelectrocatalytic water oxidation and offers broad suggestions for developing effective PEC devices.

Physically Exfoliating 2D Materials: A Versatile Combination of Different Materials into a Layered Structure

Improving the properties of the existing two-dimensional (2D) materials is a major concern for many researchers today. Synergistic coupling of single-phase 2D material species with secondary functional materials has resulted in 2D nanohybrids with significantly enhanced properties beyond the sum of their individual components. In particular, nanohybrids created by alternatingly integrating different material species in the confined 2D nanometer regime have the potential to meet the needs of a wide variety of applications, particularly the many important energy-related applications that are of interest. However, scaling up production of 2D nanohybrids is still challenging, which is a major barrier to their practical application. Delamination and exfoliation by physical means separate the weakly bound 2D nanosheets into kinetically stable single- or few-layers. Herein, we provide a concise overview of recent achievements in the physical exfoliation-based fabrication of 2D nanohybrids featuring controlled heterolayered structures. Several strategies to efficiently produce heterolayered 2D nanohybrids in large quantities are described, such as (i) coexfoliation of different 2D species, (ii) aqueous-phase synthesis, and (iii) gas-phase synthesis. The versatility of the 2D nanohybrids was also illustrated by remarkable research examples, especially in energy-related applications.

Effect of Transition Metal Dichalcogenide Based Confinement Layers on the Performance of Phase-Change Heterostructure Memory

Phase-change random-access memory is a promising non-volatile memory technology. However repeated phase-change operations can cause durability issues owing to defects formed by long-distance atom diffusion. To mitigate these issues, phase-change heterostructure (PCH) devices with confinement material (CM) layers based on transition metal dichalcogenides (TMDs) such as TiTe2 have been proposed. This study implements PCH devices with additional TMDs, including NiTe2 and MoTe2 , alongside TiTe2 , and analyzes their characteristics by examining the differences in the CM layers. The results show that the NiTe2 -based PCH device demonstrates a RESET current of 1.4 mA, 38% lower than that of the TiTe2 -based device, enabling low-power operation. Furthermore, the MoTe2 -based PCH device exhibits a cycling endurance exceeding 107 cycles, a five-fold improvement in durability compare with the TiTe2 -based device. The performance differences observe in each PCH device can be attributed to the variation in the material properties, such as the cohesive energy and electrical conductivity, of the TMDs used as the CM layer. These results provide critical clues to improve the performance and reliability of conventional PCH memory devices.

Low-temperature synthesis of colloidal few-layer WTe2 nanostructures for electrochemical hydrogen evolution

High-quality transition metal tellurides, especially for WTe₂, have been demonstrated to be necessarily synthesized under close environments and high temperatures, which are restricted by the low formation Gibbs free energy, thus limiting the electrochemical reaction mechanism and application studies. Here, we report a low-temperature colloidal synthesis of few-layer WTe₂ nanostructures with lateral sizes around hundreds of nanometers, which could be tuned the aggregation state to obtain the nanoflowers or nanosheets by using different surfactant agents. The crystal phase and chemical composition of WTe₂ nanostructures were analyzed by combining the characterization of X-ray diffraction and high-resolution transmission electron microscopy imaging and elements mapping. The as-synthesized WTe₂ nanostructures and its hybrid catalysts were found to show an excellent HER performance with low overpotential and small Tafel slope. The carbon-based WTe₂-GO and WTe₂-CNT hybrid catalysts also have been synthesized by the similar strategy to study the electrochemical interface. The energy diagram and microreactor devices have been used to reveal the interface contribution to electrochemical performance, which shows the identical performance results with as-synthesized WTe₂-carbon hybrid catalysts. These results summarize the interface design principle for semimetallic or metallic catalysts and also confirm the possible electrochemical applications of two-dimensional transition metal tellurides.

Two Dimensional Heterostructures for Optoelectronics: Current Status and Future Perspective

Researchers have found various families of two-dimensional (2D) materials and associated heterostructures through detailed theoretical work and experimental efforts. Such primitive studies provide a framework to investigate novel physical/chemical characteristics and technological aspects from micro to nano and pico scale. Two-dimensional van der Waals (vdW) materials and their heterostructures can be obtained to enable high-frequency broadband through a sophisticated combination of stacking order, orientation, and interlayer interactions. These heterostructures have been the focus of much recent research due to their potential applications in optoelectronics. Growing the layers of one kind of 2D material over the other, controlling absorption spectra via external bias, and external doping proposes an additional degree of freedom to modulate the properties of such materials. This mini review focuses on current state-of-the-art material design, manufacturing techniques, and strategies to design novel heterostructures. In addition to a discussion of fabrication techniques, it includes a comprehensive analysis of the electrical and optical properties of vdW heterostructures (vdWHs), particularly emphasizing the energy-band alignment. In the following sections, we discuss specific optoelectronic devices, such as light-emitting diodes (LEDs), photovoltaics, acoustic cavities, and biomedical photodetectors. Furthermore, this also includes a discussion of four different 2D-based photodetector configurations according to their stacking order. Moreover, we discuss the challenges that remain to be addressed in order to realize the full potential of these materials for optoelectronics applications. Finally, as future perspectives, we present some key directions and express our subjective assessment of upcoming trends in the field.

Composition-Controllable Syntheses and Property Modulations from 2D Ferromagnetic Fe5 Se8 to Metallic Fe3 Se4 Nanosheets

Exploring new-type 2D magnetic materials with high magnetic transition temperature and robust air stability has attracted wide attention for developing innovative spintronic devices. Recently, intercalation of native metal atoms into the van der Waals gaps of 2D layered transition metal dichalcogenides (TMDs) has been developed to form 2D non-layered magnetic TMDs, while only succeeded in limited systems (e.g., Cr₂ S₃ , Cr₅ Te₈ ). Herein, composition-controllable syntheses of 2D non-layered iron selenide nanosheets (25% Fe-intercalated triclinic Fe₅ Se₈ and 50% Fe-intercalated monoclinic Fe₃ Se₄ ) are firstly reported, via a robust chemical vapor deposition strategy. Specifically, the 2D Fe₅ Se₈ exhibits intrinsic room-temperature ferromagnetic property, which is explained by the change of electron spin states from layered 1T'-FeSe₂ to non-layered Fe-intercalated Fe₅ Se₈ based on density functional theory calculations. In contrast, the ultrathin Fe₃ Se₄ presents novel metallic features comparable with that of metallic TMDs. This work hereby sheds light on the composition-controllable synthesis and fundamental property exploration of 2D self-intercalation induced novel TMDs compounds, by propelling their application explorations in nanoelectronics and spintronics-related fields.

The effect of vacancy defects on the electromechanical properties of monolayer NiTe2 from first principles calculations

The electromechanical properties of monolayer 1-T NiTe₂ under charge actuation were investigated using first-principles density functional theory (DFT) calculations. Monolayer 1-T NiTe₂ in its pristine form has a work area density per cycle of up to 5.38 MJ m^-3 nm upon charge injection and it can generate a strain and a stress of 1.51% and 0.96 N m^-1, respectively. We found that defects in the form of vacancies can be exploited to modulate the electromechanical properties of this material. The presence of Ni-vacancies can further enhance the generated stress by 22.5%. On the other hand, with Te-vacancies, it is possible to improve the work area density per cycle by at least 145% and also to enhance the induced strain from 1.51% to 2.92%. The effect of charge polarity on the contraction and expansion of monolayer 1T-NiTe₂ was investigated. Due to its excellent environmental stability and good electromechanical properties, monolayer NiTe₂ is considered to be a promising electrode material for electroactive polymer (EAP) based actuators.

Vacancy-Mediated Anomalous Emission Characteristics of Size-Confined Semiconducting CoTe2

Transition-metal tellurides (TMTs) are promising materials for "post-graphene age" nanoelectronics and energy storage applications owing to their industry-standard compatibility, high electron mobility, large spin-orbit coupling (SOC), etc. However, tellurium (Te) having a larger ionic radius (Z = 52) and broader d-bands endows TMTs with semimetallic nature, restricting their application in photonic and optoelectronic domains. In this work, we report the optical properties of the quantum-confined semiconducting phase of cobalt ditelluride (CoTe₂) for the first time, exhibiting excellent two-color band photoabsorption attributes covering the UV-visible and near-infrared regions. Furthermore, novel excitonic resonances (X) of size-varying CoTe₂ nanocrystals and quantum dots (QDs) are indicated by their temperature-dependent emission characteristics, which are attributed to the splitting of band edge states via confinement. On the other hand, the sudden rupture of the large-area CoTe₂ nanosheets via ultrasonication incorporates Co vacancy-mediated localized trap states within the band gap, which is attributed to the superior room-temperature photoluminescence (PL) quantum yield of QDs and further corroborated using Raman analysis and atomistic density functional theory (DFT) simulations. Most interestingly, the excitonic peak of CoTe₂ QDs reveals a unique positive-to-negative thermal quenching transition phenomenon, owing to the thermal activation of nonradiative surface trap states. These results introduce an exciting approach for the defect-mediated color-saturated light emission that paves the way for solution-processed telluride-based QD light-emitting diodes.

Two-Dimensional Van Der Waals Topological Materials: Preparation, Properties, and Device Applications

Over the past decade, 2D van der Waals (vdW) topological materials (TMs), including topological insulators and topological semimetals, which combine atomically flat 2D layers and topologically nontrivial band structures, have attracted increasing attention in condensed-matter physics and materials science. These easily cleavable and integrated TMs provide the ideal platform for exploring topological physics in the 2D limit, where new physical phenomena may emerge, and represent a potential to control and investigate exotic properties and device applications in nanoscale topological phases. However, multifaced efforts are still necessary, which is the prerequisite for the practical application of 2D vdW TMs. Herein, this review focuses on the preparation, properties, and device applications of 2D vdW TMs. First, three common preparation strategies for 2D vdW TMs are summarized, including single crystal exfoliation, chemical vapor deposition, and molecular beam epitaxy. Second, the origin and regulation of various properties of 2D vdW TMs are introduced, involving electronic properties, transport properties, optoelectronic properties, thermoelectricity, ferroelectricity, and magnetism. Third, some device applications of 2D vdW TMs are presented, including field-effect transistors, memories, spintronic devices, and photodetectors. Finally, some significant challenges and opportunities for the practical application of 2D vdW TMs in 2D topological electronics are briefly addressed.

On-Site Synthesis and Characterizations of Atomically-Thin Nickel Tellurides with Versatile Stoichiometric Phases through Self-Intercalation

Self-intercalation of native metal atoms in two-dimensional (2D) transition metal dichalcogenides has received rapidly increasing interest, due to the generation of intriguing structures and exotic physical properties, however, only reported in limited materials systems. An emerging type-II Dirac semimetal, NiTe₂, has inspired great attention at the 2D thickness region, but has been rarely achieved so far. Herein, we report the direct synthesis of mono- to few-layer Ni-tellurides including 1T-NiTe₂ and Ni-rich stoichiometric phases on graphene/SiC(0001) substrates under ultra-high-vacuum conditions. Differing from previous chemical vapor deposition growth accompanied with transmission electron microscopy imaging, this work combines precisely tailored synthesis with on-site atomic-scale scanning tunneling microscopy observations, offering us visual information about the phase modulations of Ni-tellurides from 1T-phase NiTe₂ to self-intercalated Ni₃Te₄ and Ni₅Te₆. The synthesis of Ni self-intercalated Ni_xTe_y compounds is explained to be mediated by the high metal chemical potential under Ni-rich conditions, according to density functional theory calculations. More intriguingly, the emergence of superconductivity in bilayer NiTe₂ intercalated with 50% Ni is also predicted, arising from the enhanced electron-phonon coupling strength after the self-intercalation. This work provides insight into the direct synthesis and stoichiometric phase modulation of 2D layered materials, enriching the family of self-intercalated materials and propelling their property explorations.

Epitaxy of NiTe2 on WS2 for the p-Type Schottky Contact and Increased Photoresponse

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have great potential applications in the electronic and optoelectronic devices. Nevertheless, due to the difficulty in the efficient doping of atomic-thickness TMDCs or Fermi level pinning (FLP) effects at the metal/semiconductor interface, most TMDC devices exhibit the n-type conduction polarity, which significantly limits their functional applications based on the p-n junction. Here, 2D semi-metal NiTe₂ nanosheets were epitaxially grown on the WS₂ monolayer by a two-step chemical vapor deposition route. The microstructure and optical characterizations confirm that the vertically stacked NiTe₂/WS₂ heterostructures are formed by van der Waals epitaxy. Interestingly, p-type WS₂ field-effect transistors can be obtained with the hole mobility of ∼4.22 cm²/V·s, when the epitaxial NiTe₂ sheets act as the source/drain electrodes. This is attributed to the decreased FLP effect and hence the low potential barrier for holes at the van der Waals contacts. Furthermore, the photodetectors based on the heterostructures show a 2 orders of magnitude increase in the switch ratio, responsivity, and detectivity and a 1 order of magnitude increase in the rise and decay speeds relative to those based on pristine WS₂. This work paves the way to realize the p-type contact for monolayer WS₂ with significantly enhanced optoelectronic performance.

Controllable Synthesis Quadratic-Dependent Unsaturated Magnetoresistance of Two-Dimensional Nonlayered Fe7S8 with Robust Environmental Stability

Two-dimensional (2D) iron chalcogenides (FeX, X = S, Se, Te) are emerging as an appealing class of materials for a wide range of research topics, including electronics, spintronics, and catalysis. However, the controlled syntheses and intrinsic property explorations of such fascinating materials still remain daunting challenges, especially for 2D nonlayered Fe₇S₈ with mixed-valence states and high conductivity. Herein, we design a general and temperature-mediated chemical vapor deposition (CVD) approach to synthesize ultrathin and large-domain Fe₇S₈ nanosheets on mica substrates, with the thickness down to ∼4.4 nm (2 unit-cell). Significantly, we uncover a quadratic-dependent unsaturated magnetoresistance (MR) with out-of-plane anisotropy in 2D Fe₇S₈, thanks to its ultrahigh crystalline quality and high conductivity (∼2.7 × 10⁵ S m^-1 at room temperature and ∼1.7 × 10⁶ S m^-1 at 2 K). More interestingly, the CVD-synthesized 2D Fe₇S₈ nanosheets maintain robust environmental stability for more than 8 months. These results hereby lay solid foundations for synthesizing 2D nonlayered iron chalcogenides with mixed-valence states and exploring fascinating quantum phenomena.

Hexagonal Single-Crystal CoS Nanosheets: Controllable Synthesis and Tunable Oxygen Evolution Performance

Cobalt-based sulfides with variable valence states and unique physical and chemical properties have shown great potential as oxygen evolution reaction (OER) catalysts for electrochemical water-splitting reactions. However, poor morphological characteristics and a small specific surface area limit its further application. Here, hexagonal single-crystal two-dimensional (2D) CoS nanosheets with different thicknesses are successfully prepared by an atmospheric-pressure chemical vapor deposition method. Because of the advantages of the 2D structure, more exposed catalytic active sites, better reactant adsorption ability, accelerated electron transfer, and enhanced electrical conductivities can be achieved from the thinnest 5 nm CoS nanosheets (CoS-5), significantly improving OER performance. The electrochemical tests manifest that CoS-5 show an overpotential of 290 mV at 10 mA cm^-2 and a Tafel slope of 65.6 mV dec^-1 in the OER in an alkaline solution, superior to those for other thicknesses of CoS, bulk CoS, and RuO₂. For the mechanistic investigation, the lowest charge transfer resistance (R_ct) and the highest double-layer capacitance (C_dl) were obtained for CoS-5, demonstrating the faster OER kinetics and the larger active area. Density functional theory calculations further reveal the enhanced density of states around the Fermi level and higher H₂O molecule adsorption energy for thinner CoS nanosheets, promoting its intrinsic catalytic activity. Moreover, the two-electrode system with CoS-5 as the anode and Pt/C as the cathode requires only 1.56 V to attain 10 mA cm^-2 in the overall water-splitting reaction. We believe that this study will provide a fresh view for thickness-dependent catalytic performance and offers a new material for the study of electronic and energy devices.

P-Doped NiTe2 with Te-Vacancies in Lithium-Sulfur Batteries Prevents Shuttling and Promotes Polysulfide Conversion

Lithium-sulfur (Li-S) batteries have been hindered by the shuttle effect and sluggish polysulfide conversion kinetics. Here, a P-doped nickel tellurium electrocatalyst with Te-vacancies (P⊂NiTe_{2- x} ) anchored on maize-straw carbon (MSC) nanosheets, served as a functional layer (MSC/P⊂NiTe_{2- x} ) on the separator of high-performance Li-S batteries. The P⊂NiTe_{2- x} electrocatalyst enhanced the intrinsic conductivity, strengthened the chemical affinity for polysulfides, and accelerated sulfur redox conversion. The MSC nanosheets enabled NiTe₂ nanoparticle dispersion and Li⁺ diffusion. In situ Raman and ex situ X-ray absorption spectra confirmed that the MSC/P⊂NiTe_{2- x} restrained the shuttle effect and accelerated the redox conversion. The MSC/P⊂NiTe_{2- x} -based cell has a cyclability of 637 mAh g^-1 at 4 C over 1800 cycles with a degradation rate of 0.0139% per cycle, high rate performance of 726 mAh g^-1 at 6 C, and a high areal capacity of 8.47 mAh cm^-2 under a sulfur configuration of 10.2 mg cm^-2 , and a low electrolyte/sulfur usage ratio of 3.9. This work demonstrates that vacancy-induced doping of heterogeneous atoms enables durable sulfur electrochemistry and can impact future electrocatalytic designs related to various energy-storage applications.

Modulating the Electronic Structure of Nickel Sulfide Electrocatalysts by Chlorine Doping toward Highly Efficient Alkaline Hydrogen Evolution

The exploration of indurative and stable low-cost catalysts for hydrogen evolution reaction (HER) is of great importance for hydrogen energy economy, but it still faces challenges. Herein, we report a Cl-doped Ni₃S₂ (Cl-Ni₃S₂) nanoplate catalyst vertically grown on Ni foam with outstanding activity and durability for HER, which only requires an overpotential of 67 mV to reach a current density of 10 mA cm^-2 in alkaline media and exhibits negligible degradation after 30 h of operation. Both the advanced X-ray absorption fine structure (XAFS) and density functional theory (DFT) calculation validate that Cl doping can optimize the electronic structure and the intrinsic activity of Ni₃S₂. This study devoted to the revelation of the impact of ionic doping on the activity of catalysts at the atomic scale can provide the direction for the rational design of novel and advanced HER electrocatalysts.

2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges

A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro-nano-pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.

Realizing Efficient Catalytic Performance and High Selectivity for Oxygen Reduction Reaction on a 2D Ni2SbTe2 Monolayer

One of the immediate challenges for the large-scale commercialization of hydrogen-based fuel cells is to develop cost-effective electrocatalysts to enable cathodic oxygen reduction reaction (ORR). Herein, we focus on the potential of the two-dimensional (2D) ternary chalcogenide Ni₂SbTe₂ monolayer as a high-performance electrocatalyst for the ORR using density function theory. Our computed results reveal that there are an obvious hybridization and electron transfer between the O 2p and Te 5p orbitals, which can activate the adsorbed oxygen and trigger the whole ORR process, with an overpotential as low as 0.33 V. In addition, the adsorption capacity of the monolayer surface for oxygen molecules can be effectively enhanced by doping with Fe or Co atoms. The Ni₂SbTe₂ monolayers doped with Fe or Co atoms not only maintain their original excellent ORR catalytic activity but also improve selectivity toward the four-electron (4e) reduction pathway. We highly anticipate that this work can provide excellent candidates and new ideas for designing low-cost and high-performance ORR catalysts to replace noble metal Pt-based catalysts in fuel cells.

Highly-tunable ferromagnetism in Cr-doped layered van der Waals NiTe2 crystals with high air stability

In the present work, tunable ferromagnetism can be introduced in NiTe2 crystals by Cr doping with high air-stability.

Phase-Tunable Synthesis and Etching-Free Transfer of Two-Dimensional Magnetic FeTe

Two-dimensional (2D) Fe-chalcogenides (e.g., FeS, FeSe, and FeTe, etc.) have sparked extensive interest due to their rich phase diagrams including superconductivity, magnetism, and topological state, as well as versatile applications in electronic devices and energy related fields. However, the phase-tunable synthesis and green transfer of such fascinating materials still remain challenging. Herein, we develop a temperature-mediated chemical vapor deposition (CVD) approach to grow ultrathin nonlayered hexagonal and layered tetragonal FeTe nanosheets on mica substrates, with their thicknesses down to ∼2.3 and ∼4.0 nm, respectively. Interestingly, we have observed exciting ferromagnetism with the Curie temperature approaching ∼300 K and high conductivity (∼1.96 × 10⁵ S m^-1) in 2D hexagonal FeTe. More significantly, we have designed a swift, high-efficiency, and etching-free method for the transfer of 2D FeTe nanosheets onto arbitrary substrates, and such a transfer strategy enables the cyclic utilization of growth substrates. These results should propel the further development of phase-tunable synthesis and green transfer of 2D Fe-chalcogenides, as well as their potential applications in spintronic devices.

Pseudocapacitance-boosted ultrafast and stable Na-storage in NiTe2 coupled with N-doped carbon nanosheets for advanced sodium-ion half/full batteries

Developing high-rate and durable anode materials for sodium-ion batteries (SIBs) is still a challenge because of the larger ion radius of sodium compared with the lithium ion during charge-discharge processes. Herein, NiTe₂ coupled with N-doped carbon (NiTe₂/NC) hexagonal nanosheets has been fabricated through a solvothermal and subsequent carbonisation strategy. This unique hexagonal nanosheet structure offers abundant active sites and contact area to the electrolyte, which could shorten the Na⁺ diffusion path. The heterostructured N-doping carbon improves the electrochemical conductivity and accelerates the kinetics of Na⁺ transportation. Electrochemical analysis shows that the charge-discharge process is controlled by the pseudocapacitive behavior thus leading to high-rate capability and long lifespan in half batteries. As expected, high capacities of 311 mA h g^-1 to 217 mA h g^-1 at 5 A g^-1 to 10 A g^-1 are maintained after 800 and 1200 cycles, respectively. Furthermore, a full battery equipped with a Na₃V₂(PO₄)₂O₂F cathode and a NiTe₂/NC anode offers a maximum energy density of 104 W h kg^-1 and a maximum power density of 9116 W kg^-1. The results clearly show that the NiTe₂/NC hexagonal nanosheet with superior Na storage properties is an advanced new material for energy storage systems.

Immobilized Precursor Particle Driven Growth of Centimeter-Sized MoTe2 Monolayer

Molybdenum ditelluride (MoTe₂) has attracted ever-growing attention in recent years due to its novel characteristics in spintronics and phase-engineering, and an efficient and convenient method to achieve large-area high-quality film is an essential step toward electronic applications. However, the growth of large-area monolayer MoTe₂ is challenging. Here, for the first time, we achieve the growth of a centimeter-sized monoclinic MoTe₂ monolayer and manifest the mechanism of immobilized precursor particle driven growth. Microscopic characterizations reveal an obvious trend of immobilized precursor particles being consumed by the monolayer and continuing to provide a source for the growth of the monolayer. Time-of-flight secondary ion mass spectrometry verifies the attachment of hydroxide ions on the surface of the MoTe₂ monolayer, thereby realizing the inhibition of crystal growth along the [001] zone axis and the continuous growth of the MoTe₂ monolayer. The first-principles DFT calculations prove the mechanism of immobilized precursor particles and the absorption of hydroxide ions on the MoTe₂ monolayer. The as-grown MoTe₂ monolayer exhibits a surface roughness of 0.19 nm and average conductivity of 1.5 × 10^-5 S/m, which prove the smoothness and uniformity of the MoTe₂ monolayer. Temperature-dependent electrical measurements together with the transfer characteristic curves further demonstrate the typical semimetallic properties of monoclinic MoTe₂. Our research elaborates the microscopic process of immobilized precursor particles to grow large-area MoTe₂ monolayer and provides a new thinking about the growth of many other two-dimensional materials.

Two-step chemical vapor deposition synthesis of NiTe2-MoS2 vertical junctions with improved MoS2 transistor performance

The primary challenge for the widespread application of two-dimensional (2D) electronics is to achieve satisfactory electrical contacts because, during the traditional metal integration process, difficulties arise due to inevitable physical damage and selective doping. Two-dimensional metal-semiconductor junctions have attracted attention for the potential application to achieve reliable electrical contacts in future atomically thin electronics. Here we demonstrate the van der Waals epitaxial growth of 2D NiTe2-MoS2 metal-semiconductor vertical junctions where the upper NiTe2 selectively nucleates at the edge of the underlying MoS2. Optical microscopy (OM), scanning electron microscopy (SEM), atomic force microscopy (AFM), and scanning transmission electron microscope (STEM) studies confirmed that NiTe2-MoS2 metal-semiconductor vertical junctions had been successfully synthesized. The electrical properties of the NiTe2-contacted MoS2 field-effect transistors (FETs) showed higher field-effect mobilities (μ FE) than those with deposited Cr/Au contacts. This study demonstrates an effective pathway to improved MoS2 transistor performance with metal-semiconductor junctions.

High-frequency rectifiers based on type-II Dirac fermions

The advent of topological semimetals enables the exploitation of symmetry-protected topological phenomena and quantized transport. Here, we present homogeneous rectifiers, converting high-frequency electromagnetic energy into direct current, based on low-energy Dirac fermions of topological semimetal-NiTe₂, with state-of-the-art efficiency already in the first implementation. Explicitly, these devices display room-temperature photosensitivity as high as 251 mA W⁻¹ at 0.3 THz in an unbiased mode, with a photocurrent anisotropy ratio of 22, originating from the interplay between the spin-polarized surface and bulk states. Device performances in terms of broadband operation, high dynamic range, as well as their high sensitivity, validate the immense potential and unique advantages associated to the control of nonequilibrium gapless topological states via built-in electric field, electromagnetic polarization and symmetry breaking in topological semimetals. These findings pave the way for the exploitation of topological phase of matter for high-frequency operations in polarization-sensitive sensing, communications and imaging.

High-frequency rectifiers at terahertz regime are pivotal components in modern communication, whereas the drawbacks in semiconductor junctions-based devices inhibit their usages. Here, the authors report electromagnetic rectification with high signal-to-noise ratio driven by chiral Bloch-electrons in type-II Dirac semimetal NiTe₂-based device allowing for efficient THz detection.

Two-Dimensional Metallic Vanadium Ditelluride as a High-Performance Electrode Material

Two-dimensional (2D) metallic transition-metal dichalcogenides (MTMDCs) are considered as ideal electrode materials for enhancing the device performances of 2D semiconducting transition-metal dichalcogenides, due to their similar atomic structures and complementary electronic properties. Vanadium ditelluride (VTe₂) behaves as a fascinating material in MTMDCs family, presenting room-temperature ferromagnetism, charge density waves order, and topological property. However, its practical applications in universal electrode/energy-related fields remain unexplored. Herein, we achieved the direct synthesis of ultrathin, large-domain, and thickness-tunable 1T-VTe₂ nanosheets on an easily available mica substrate by chemical vapor deposition (CVD). We further uncover that the CVD-derived 1T-VTe₂ can serve as a high-performance electrode material thanks to its ultrahigh conductivity. Accordingly, a 6 times higher field-effect mobility (∼47.5 cm² V^-1 s^-1) was achieved in 1T-VTe₂-contacted monolayer MoS₂ devices than that using a conventional Ti/Au electrode (∼8.1 cm² V^-1 s^-1). Moreover, the CVD-synthesized 1T-VTe₂ nanosheets are revealed to present excellent electrocatalytic activity for hydrogen evolution reaction. These results should propel the direct application of CVD-grown 2D MTMDCs as high-performance electrode materials in all 2D materials related devices.