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Duan Z, Zhao X, Zhang X, Cui R, Wang P. Spontaneous Nanocrystals/Amorphous MoS 2 Film Induced by Fe + Irradiation with Superior Irradiation Tolerance and Tribology Properties. ACS APPLIED MATERIALS & INTERFACES 2025. [PMID: 40072943 DOI: 10.1021/acsami.5c00594] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/14/2025]
Abstract
High-performance radiation-resistant lubricating materials (RRLMs) with nanostructures hold great promise for enhancing the irradiation tolerance because of their sinking effect of boundaries on defects. Despite recent advances, challenges remain in finding a nanostructure that exhibits both superior irradiation tolerance and excellent lubricant properties. Unlike traditional nanostructured composite materials that required complex predesign, herein, a MoS2 nanocrystals (NCs)/amorphous dual phase in subirradiation saturation (SIS) state was spontaneously formed during irradiation, exhibiting high irradiation resistance under the synergistic effect of "defect traps" by interfaces and edge dislocation. This nanocrystals (NCs)/amorphous dual phase where each has its own advantages exhibits a significant reduction in both friction coefficient and wear rate even under irradiation damage of 8 dpa, pushing the limit of irradiation performance for current solid lubricants. Furthermore, based on the molecular dynamics (MD) analysis, other factors influencing the intrinsic irradiation tolerance of MoS2, such as collision angles and S off-sites, have also been comprehensively investigated to clarify the damage mechanism of MoS2. Our findings offer advanced perspectives for the design of high-performance RRLMs, enabled by edge dislocations, S off sites, and crystal orientation, inspiring the fabrication of structural-functional integrated materials in extreme environment applications such as nuclear reactors.
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Affiliation(s)
- Zewen Duan
- Transportation Institute, Inner Mongolia University, Hohhot 010021, China
| | - Xiaoyu Zhao
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China
| | - Xuefei Zhang
- State Key Laboratory of New Ceramics and Fine Processing School of Materials Science and Engineering Tsinghua University, Beijing 100084, China
| | - Ruopeng Cui
- State Key Laboratory of New Ceramics and Fine Processing School of Materials Science and Engineering Tsinghua University, Beijing 100084, China
| | - Peng Wang
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China
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Pei S, Zhang Z, Jiao C, Wang Z, Lv J, Zhang Y, Huang M, Wang Y, Wang Z, Xia J. Quantitative regulation of electron-phonon coupling. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2024; 87:078001. [PMID: 38957891 DOI: 10.1088/1361-6633/ad4fbd] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/26/2023] [Accepted: 05/23/2024] [Indexed: 07/04/2024]
Abstract
Electron-phonon (e-p) coupling plays a crucial role in various physical phenomena, and regulation of e-p coupling is vital for the exploration and design of high-performance materials. However, the current research on this topic lacks accurate quantification, hindering further understanding of the underlying physical processes and its applications. In this work, we demonstrate quantitative regulation of e-p coupling, by pressure engineering andin-situspectroscopy. We successfully observe both a distinct vibrational mode and a strong Stokes shift in layered CrBr3, which are clear signatures of e-p coupling. This allows us to achieve precise quantification of the Huang-Rhys factorSat the actual sample temperature, thus accurately determining the e-p coupling strength. We further reveal that pressure efficiently regulates the e-p coupling in CrBr3, evidenced by a remarkable 40% increase inSvalue. Our results offer an approach for quantifying and modulating e-p coupling, which can be leveraged for exploring and designing functional materials with targeted e-p coupling strengths.
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Affiliation(s)
- Shenghai Pei
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Zejuan Zhang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Chenyin Jiao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Zhenyu Wang
- International Center of Future Science, College of Physics, Jilin University, Changchun 130012, People's Republic of China
- International Center of Computational Method & Software, College of Physics, Jilin University, Changchun 130012, People's Republic of China
| | - Jian Lv
- International Center of Computational Method & Software, College of Physics, Jilin University, Changchun 130012, People's Republic of China
| | - Yujun Zhang
- School of Physics and Astronomy and Key Lab of Quantum Information of Yunnan Province, Yunnan University, Kunming 650091, People's Republic of China
| | - Mingyuan Huang
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
| | - Yanchao Wang
- International Center of Computational Method & Software, College of Physics, Jilin University, Changchun 130012, People's Republic of China
| | - Zenghui Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Juan Xia
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
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Song Z, Shen Y, Xu N, Hong T, Zhu H, Wang Z, Tang S, Zhang Y, Chen H, Deng S. Dependence of Ultrafast Electron Emission Characteristics of Graphene Cold Cathode on Femtosecond Photoexcitation Polarization Angle. ACS APPLIED MATERIALS & INTERFACES 2024; 16:34001-34009. [PMID: 38961569 DOI: 10.1021/acsami.4c08955] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/05/2024]
Abstract
Ultrafast electron pulses, generated through femtosecond photoexcitation in nanocathode materials, introduce high-frequency characteristics and ultrahigh temporal-spatial resolution to vacuum micro-nano electronic devices. To advance the development of ultrafast electron sources sensitive to polarized light, we propose an ultrafast pulsed electron source based on a vertical few-layer graphene cold cathode. This source exhibits selective electron emission properties for varying polarization angles, with high switching ratios of 277 (at 0°) and 235 (at 90°). The electron emission of the graphene evolves from cosine to sine as the polarization angle increases from 0° to 90°. The variation of electron emission current with polarization angle is intrinsically related to light absorption, local field enhancement, and photothermal conversion efficiency. A physical mechanism model and semiempirical expression were presented to reveal the MPP and PTE mechanisms at different polarization angles. This tunable conversion between mechanisms indicates potential applications in tunable ultrafast optoelectronic devices.
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Affiliation(s)
- Zheyu Song
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Provincial Key Laboratory of Display Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, P. R. China
| | - Yan Shen
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Provincial Key Laboratory of Display Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, P. R. China
| | - Ningsheng Xu
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Provincial Key Laboratory of Display Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, P. R. China
| | - Tianzeng Hong
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Provincial Key Laboratory of Display Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, P. R. China
| | - Hai Zhu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, P. R. China
| | - Zixin Wang
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Provincial Key Laboratory of Display Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, P. R. China
| | - Shuai Tang
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Provincial Key Laboratory of Display Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, P. R. China
| | - Yu Zhang
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Provincial Key Laboratory of Display Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, P. R. China
| | - Huanjun Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Provincial Key Laboratory of Display Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, P. R. China
| | - Shaozhi Deng
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Provincial Key Laboratory of Display Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, P. R. China
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Saito R, Hung NT, Yang T, Huang J, Liu HL, Gulo DP, Han S, Tong L. Deep-Ultraviolet and Helicity-Dependent Raman Spectroscopy for Carbon Nanotubes and 2D Materials. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2308558. [PMID: 38412418 DOI: 10.1002/smll.202308558] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/25/2023] [Revised: 01/10/2024] [Indexed: 02/29/2024]
Abstract
Recent progress of Raman spectroscopy on carbon nanotubes and 2D materials is reviewed as a topical review. The Raman tensor with complex values is related to the chiral 1D/2D materials without mirror symmetry for the mirror in the propagating direction of light, such as chiral carbon nanotube and black phosphorus. The phenomenon of complex Raman tensor is observed by the asymmetric polar plot of helicity-dependent Raman spectroscopy using incident circularly-polarized lights. First-principles calculations of resonant Raman spectra directly give the complex Raman tensor that explains helicity-dependent Raman spectra and laser-energy-dependent relative intensities of Raman spectra. In deep-ultraviolet (DUV) Raman spectroscopy with 266 nm laser, since the energy of the photon is large compared with the energy gap, the first-order and double resonant Raman processes occur in general k points in the Brillouin zone. First-principles calculation is necessary to understand the DUV Raman spectra and the origin of double-resonance Raman spectra. Asymmetric line shapes appear for the G band of graphene for 266 nm laser and in-plane Raman mode of WS2 for 532 nm laser, while these spectra show symmetric line shapes for other laser excitation. The interference effect on the asymmetric line shape is discussed by fitting the spectra to the Breit-Wigner-Fano line shapes.
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Affiliation(s)
- Riichiro Saito
- Department of Physics, National Taiwan Normal University, Taipei, 11677, Taiwan
- Department of Physics, and Tohoku University, Sendai, 980-8578, Japan
| | - Nguyen Tuan Hung
- Frontier Research Institute for Interdisciplinary Sciences, Tohoku University, Sendai, 980-8578, Japan
| | - Teng Yang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
| | - Jianqi Huang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
| | - Hsiang-Lin Liu
- Department of Physics, National Taiwan Normal University, Taipei, 11677, Taiwan
| | | | - Shiyi Han
- College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Lianming Tong
- College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
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Acher O, Aleksanyan A, Thieffry A. Confocal Raman microscope with versatile dual polarization snapshot acquisition. OPTICS EXPRESS 2022; 30:46734-46748. [PMID: 36558618 DOI: 10.1364/oe.473360] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/26/2022] [Accepted: 11/17/2022] [Indexed: 06/17/2023]
Abstract
In this paper we propose a new strategy towards simultaneous co- and cross-polarized measurements of Raman spectra in a confocal microscope. One of the advantages of this strategy is that it is immune to polarization-dependent efficiency of diffraction gratings. It is shown via linear angle-resolved and circular polarization measurements that the accuracy of these snapshot polarization measurements on solid and liquid samples are in good agreement with available models and data. The interest of simultaneous acquisition of the total Raman response and the degree of polarization is discussed as well.
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Zhao Y, Zhang S, Xu B, Zhang S, Han S, Zhang J, Tong L. Monitoring Strain-Controlled Exciton-Phonon Coupling in Layered MoS 2 by Circularly Polarized Light. J Phys Chem Lett 2021; 12:11555-11562. [PMID: 34806884 DOI: 10.1021/acs.jpclett.1c03481] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The modulation of exciton-phonon coupling by strain greatly affects the optical and optoelectronic properties of two-dimensional (2D) materials. Although photoluminescence and optical absorption spectra have been used to characterize the overall change of exciton-phonon coupling under strain, there has been no effective method to distinguish the evolution of the major contributions of exciton-phonon coupling, that is, deformation potential (DP) and Fröhlich interaction (FI). Here we report the direct monitoring of the evolution of DP and FI under strain in layered MoS2 using circularly polarized Raman spectroscopy. We found that the relative proportions of DP and FI can be well evaluated by the circular polarization ratio of the E2g1 mode for strained MoS2. Further, we demonstrated that the strain control of DP and FI in MoS2 is dominated by the excitonic effect. Our method can be extended to other 2D semiconductors and would be helpful for manipulating exciton-phonon couplings by strain.
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Affiliation(s)
- Yan Zhao
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
- College of Chemistry and Molecular Engineering, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, Peking University, Beijing 100871, P. R. China
| | - Shuqing Zhang
- Institute of Information Photonics Technology, Faculty of Science, Beijing University of Technology, Beijing 100124, P. R. China
| | - Bo Xu
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
- College of Chemistry and Molecular Engineering, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, Peking University, Beijing 100871, P. R. China
| | - Shishu Zhang
- College of Chemistry and Molecular Engineering, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, Peking University, Beijing 100871, P. R. China
| | - Shiyi Han
- College of Chemistry and Molecular Engineering, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, Peking University, Beijing 100871, P. R. China
| | - Jin Zhang
- College of Chemistry and Molecular Engineering, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, Peking University, Beijing 100871, P. R. China
| | - Lianming Tong
- College of Chemistry and Molecular Engineering, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, Peking University, Beijing 100871, P. R. China
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The helicity of Raman scattered light: principles and applications in two-dimensional materials. Sci China Chem 2021. [DOI: 10.1007/s11426-021-1119-4] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/19/2022]
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Wang W, Mao Z, Ren Y, Meng F, Shi X, Zhao B. Operando Raman spectroscopic evidence of electron-phonon interactions in NiO/TiO 2 pn junction photodetectors. Chem Commun (Camb) 2021; 57:12333-12336. [PMID: 34747431 DOI: 10.1039/d1cc05303e] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The pn junctions significantly affect the responsivity of photodetectors (PDs). However, the enhancement mechanism of the pn junction is still unclear. Herein, operando Raman spectroscopy was employed to study PDs with NiO/TiO2 pn junctions composed of p-NiO nanoparticles (NPs) and n-TiO2 nanotube arrays (TNAs). The results suggest that the built-in potential field of the NiO/TiO2 interface decreases the charge transfer resistance and changes the vibrational frequency of the phonon modes of TiO2, which is attributed to the electron-phonon coupling effect. Operando Raman spectroscopy is proved to be a powerful tool for manufacturing highly responsive PDs.
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Affiliation(s)
- Wenjun Wang
- School of Chemistry and Life Science, Advanced Institute of Materials Science, Changchun University of Technology, Changchun 130012, China.
| | - Zhu Mao
- School of Chemistry and Life Science, Advanced Institute of Materials Science, Changchun University of Technology, Changchun 130012, China.
| | - Yanyu Ren
- School of Chemistry and Life Science, Advanced Institute of Materials Science, Changchun University of Technology, Changchun 130012, China.
| | - Fanxu Meng
- Jilin Institute of Chemical Technology, Jilin 132022, China
| | - Xiumin Shi
- College of Chemical Engineering, Changchun University of Technology, Changchun 130012, China
| | - Bing Zhao
- State Key Laboratory of Supramolecular Structure and Materials, Jilin University, Changchun 130012, China.
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Lorenz S, Bieniek J, Erickson CS, Gamelin DR, Fainblat R, Bacher G. Orientation of Individual Anisotropic Nanocrystals Identified by Polarization Fingerprint. ACS NANO 2021; 15:13579-13590. [PMID: 34339182 DOI: 10.1021/acsnano.1c04451] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The polarization of photoluminescence emitted from anisotropic nanocrystals directly reflects the symmetry of the eigenstates involved in the recombination process and can thus be considered as a characteristic feature of a nanocrystal. We performed polarization resolved magneto-photoluminescence spectroscopy on single colloidal Mn2+:CdSe/CdS core-shell quantum dots of wurtzite crystal symmetry. At zero magnetic field, a distinct linear polarization pattern is observed, while applying a magnetic field enforces circularly polarized emission with a characteristic saturation value below 100%. These polarization features are shown to act as a specific fingerprint of each individual nanocrystal. A model considering the orientation of the crystal c⃗ axis with respect to the optical axis and the magnetic field and taking into account the impact of magnetic doping is introduced and quantitatively explains our findings. We demonstrate that a careful analysis of the polarization state of single nanocrystal emission using the full set of Stokes parameters allows for identification of the complete three-dimensional orientation of the crystal anisotropy axis of an individual nanoobject in lab coordinates.
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Affiliation(s)
- Severin Lorenz
- Werkstoffe der Elektrotechnik and CENIDE, University of Duisburg-Essen, Bismarckstr. 81, Duisburg 47057 Germany
| | - Jan Bieniek
- Werkstoffe der Elektrotechnik and CENIDE, University of Duisburg-Essen, Bismarckstr. 81, Duisburg 47057 Germany
| | - Christian S Erickson
- Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States
| | - Daniel R Gamelin
- Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States
| | - Rachel Fainblat
- Werkstoffe der Elektrotechnik and CENIDE, University of Duisburg-Essen, Bismarckstr. 81, Duisburg 47057 Germany
| | - Gerd Bacher
- Werkstoffe der Elektrotechnik and CENIDE, University of Duisburg-Essen, Bismarckstr. 81, Duisburg 47057 Germany
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Xu B, Mao N, Zhao Y, Tong L, Zhang J. Polarized Raman Spectroscopy for Determining Crystallographic Orientation of Low-Dimensional Materials. J Phys Chem Lett 2021; 12:7442-7452. [PMID: 34338534 DOI: 10.1021/acs.jpclett.1c01889] [Citation(s) in RCA: 18] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Raman spectroscopy is a fast and nondestructive characterization technique, which has been widely used for the characterization of the composition and structure information of various materials. The symmetry-dependent Raman tensor allows the detection of crystallographic orientation of materials by using polarization information. In this Perspective, we discuss polarized Raman spectroscopy as a powerful tool for determination of the crystallographic orientation of various materials. First, we introduce the basic principles of polarized Raman spectroscopy and the corresponding experimental setups; the determination of crystallographic orientation of two-dimensional (2D) materials with in-plane isotropy and in-plane anisotropy using linearly polarized Raman scattering are then discussed. Furthermore, we discuss that using circularly polarized Raman spectroscopy, the azimuthal angle of materials in three dimensions (3D) can be characterized. In the final section, we show that the orientation distribution of nanomaterial assemblies can be measured using polarized Raman spectroscopy by introducing the orientation distribution function.
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Affiliation(s)
- Bo Xu
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P.R. China
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P.R. China
| | - Nannan Mao
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Yan Zhao
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P.R. China
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P.R. China
| | - Lianming Tong
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P.R. China
| | - Jin Zhang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P.R. China
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