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Horváth R, Modica G, Ghorbel I, Beaudoin G, Pantzas K, Sagnes I, Martin A, De Rossi A, Combrié S, Braive R. Sub-Hz Closed-Loop Electro-Optomechanical Oscillator with Gallium Phosphide Photonic Crystal Integrated on SoI Circuitry. ACS PHOTONICS 2023; 10:2540-2548. [PMID: 37602296 PMCID: PMC10437041 DOI: 10.1021/acsphotonics.3c00074] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/13/2023] [Indexed: 08/22/2023]
Abstract
We report on a new approach of a low phase noise electro-optomechanical oscillator directly working in the GHz frequency range. The developed nanoscale oscillator is a one-dimensional photonic crystal made of gallium phosphide (GaP), heterogeneously integrated on silicon-on-insulator circuitry. Based on the strong interaction between the optical mode at the telecommunication wavelength and the mechanical mode in GHz, ultra-pure mechanical oscillations are enabled and directly imprinted on an optical carrier. Further stabilization is achieved with a delayed optoelectronic feedback loop using integrated electro-mechanical self-injection. We achieve a short-term stability of 0.7 Hz linewidth and a long-term stability with an Allan deviation below 10-7 Hz/Hz at 10 s averaging time, which represents an important step toward fully integrated optomechanical oscillators. Integrability and the low phase noise of this oscillator address some of the most important needs of optoelectronic oscillators and pave the way toward on-chip integrated microwave oscillators for microwave applications such as RADARs.
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Affiliation(s)
- Róbert Horváth
- Centre
de Nanosciences et de Nanotechnologies, CNRS, Université Paris Saclay, Palaiseau 91120, France
| | - Giuseppe Modica
- Centre
de Nanosciences et de Nanotechnologies, CNRS, Université Paris Saclay, Palaiseau 91120, France
| | - Inès Ghorbel
- Thales
Research and Technology, Campus Polytechnique, Palaiseau 91120, France
| | - Grégoire Beaudoin
- Centre
de Nanosciences et de Nanotechnologies, CNRS, Université Paris Saclay, Palaiseau 91120, France
| | - Konstantinos Pantzas
- Centre
de Nanosciences et de Nanotechnologies, CNRS, Université Paris Saclay, Palaiseau 91120, France
| | - Isabelle Sagnes
- Centre
de Nanosciences et de Nanotechnologies, CNRS, Université Paris Saclay, Palaiseau 91120, France
| | - Aude Martin
- Thales
Research and Technology, Campus Polytechnique, Palaiseau 91120, France
| | - Alfredo De Rossi
- Thales
Research and Technology, Campus Polytechnique, Palaiseau 91120, France
| | - Sylvain Combrié
- Thales
Research and Technology, Campus Polytechnique, Palaiseau 91120, France
| | - Rémy Braive
- Centre
de Nanosciences et de Nanotechnologies, CNRS, Université Paris Saclay, Palaiseau 91120, France
- Université
Paris Cité, Paris 75006, France
- Institut
Universitaire de France (IUF), Paris 75231, France
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2
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Mastalieva V, Neplokh V, Aybush A, Fedorov V, Yakubova A, Koval O, Gudovskikh A, Makarov S, Mukhin I. Laser-Activated Second Harmonic Generation in Flexible Membrane with Si Nanowires. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13091563. [PMID: 37177108 PMCID: PMC10180697 DOI: 10.3390/nano13091563] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/16/2023] [Revised: 04/30/2023] [Accepted: 05/02/2023] [Indexed: 05/15/2023]
Abstract
Nonlinear silicon photonics has a high compatibility with CMOS technology and therefore is particularly attractive for various purposes and applications. Second harmonic generation (SHG) in silicon nanowires (NWs) is widely studied for its high sensitivity to structural changes, low-cost fabrication, and efficient tunability of photonic properties. In this study, we report a fabrication and SHG study of Si nanowire/siloxane flexible membranes. The proposed highly transparent flexible membranes revealed a strong nonlinear response, which was enhanced via activation by an infrared laser beam. The vertical arrays of several nanometer-thin Si NWs effectively generate the SH signal after being exposed to femtosecond infrared laser irradiation in the spectral range of 800-1020 nm. The stable enhancement of SHG induced by laser exposure can be attributed to the functional modifications of the Si NW surface, which can be used for the development of efficient nonlinear platforms based on silicon. This study delivers a valuable contribution to the advancement of optical devices based on silicon and presents novel design and fabrication methods for infrared converters.
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Affiliation(s)
- Viktoriia Mastalieva
- Center of Nanotechnology, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia
| | - Vladimir Neplokh
- Center of Nanotechnology, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia
- Higher School of Engineering Physics, Peter the Great St. Petersburg Polytechnic University, Polytechnicheskaya 29, 195251 St. Petersburg, Russia
| | - Arseniy Aybush
- N.N. Semenov Federal Research Center for Chemical Physics, Russian Academy of Sciences, Kosygin Street 4, 119991 Moscow, Russia
| | - Vladimir Fedorov
- Center of Nanotechnology, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia
| | - Anastasiya Yakubova
- Center of Nanotechnology, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia
| | - Olga Koval
- Moscow Institute of Physics and Technology, Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutskiy Lane, 141701 Dolgoprudny, Russia
| | - Alexander Gudovskikh
- Center of Nanotechnology, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia
| | - Sergey Makarov
- School Department of Physics and Engineering, ITMO University, Lomonosova 9, 197101 St. Petersburg, Russia
- Qingdao Innovation and Development Center, Harbin Engineering University, Qingdao 266000, China
| | - Ivan Mukhin
- Center of Nanotechnology, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia
- Higher School of Engineering Physics, Peter the Great St. Petersburg Polytechnic University, Polytechnicheskaya 29, 195251 St. Petersburg, Russia
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3
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Kuznetsov A, Roy P, Grudinin DV, Kondratev VM, Kadinskaya SA, Vorobyev AA, Kotlyar KP, Ubyivovk EV, Fedorov VV, Cirlin GE, Mukhin IS, Arsenin AV, Volkov VS, Bolshakov AD. Self-assembled photonic structure: a Ga optical antenna on GaP nanowires. NANOSCALE 2023; 15:2332-2339. [PMID: 36637064 DOI: 10.1039/d2nr04571k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Semiconductor nanowires are the perfect platform for nanophotonic applications owing to their resonant, waveguiding optical properties and technological capabilities providing control over their crystalline and chemical compositions. The vapor-liquid-solid growth mechanism allows the formation of hybrid metal-dielectric nanostructures promoting sub-wavelength light manipulation. In this work, we explore both experimentally and numerically the plasmonic effects promoted by a gallium (Ga) nanoparticle optical antenna decorating the facet of gallium phosphide (GaP) nanowires. Raman, photoluminescence and near-field mapping techniques are used to study the effects. We demonstrate several phenomena including field enhancement, antenna effect and increase in internal reflection. We show that the observed effects have to be considered when nanowires with a plasmonic particle are used in nanophotonic circuits and discuss the ways for utilization of these effects for efficient coupling of light into nanowire waveguide and field tailoring. The results open up promising pathways for the development of both passive and active nanophotonic elements, light harvesting and sensorics.
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Affiliation(s)
- Alexey Kuznetsov
- St Petersburg State University, St Petersburg 199034, Russia.
- Center for nanotechnologies, Alferov University, Saint Petersburg 194021, Russia
| | - Prithu Roy
- ITMO University, 197101, Saint Petersburg, Russia
| | - Dmitry V Grudinin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141701, Russia
| | - Valeriy M Kondratev
- Center for nanotechnologies, Alferov University, Saint Petersburg 194021, Russia
| | | | - Alexandr A Vorobyev
- Center for nanotechnologies, Alferov University, Saint Petersburg 194021, Russia
| | - Konstantin P Kotlyar
- St Petersburg State University, St Petersburg 199034, Russia.
- Center for nanotechnologies, Alferov University, Saint Petersburg 194021, Russia
| | | | - Vladimir V Fedorov
- Center for nanotechnologies, Alferov University, Saint Petersburg 194021, Russia
| | - George E Cirlin
- St Petersburg State University, St Petersburg 199034, Russia.
| | - Ivan S Mukhin
- Center for nanotechnologies, Alferov University, Saint Petersburg 194021, Russia
- ITMO University, 197101, Saint Petersburg, Russia
- Higher School of Engineering Physics, Peter the Great Saint Petersburg Polytechnic University, Saint Petersburg 195251, Russia
| | - Aleksey V Arsenin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141701, Russia
| | - Valentyn S Volkov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141701, Russia
| | - Alexey D Bolshakov
- St Petersburg State University, St Petersburg 199034, Russia.
- Center for nanotechnologies, Alferov University, Saint Petersburg 194021, Russia
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny 141701, Russia
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4
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Anikina MA, Roy P, Kadinskaya SA, Kuznetsov A, Kondratev VM, Bolshakov AD. Numerical Study of GaP Nanowires: Individual and Coupled Optical Waveguides and Resonant Phenomena. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 13:56. [PMID: 36615966 PMCID: PMC9824084 DOI: 10.3390/nano13010056] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/03/2022] [Revised: 12/19/2022] [Accepted: 12/20/2022] [Indexed: 06/17/2023]
Abstract
The development of novel nanophotonic devices and circuits necessitates studies of optical phenomena in nanoscale structures. Catalyzed semiconductor nanowires are known for their unique properties including high crystallinity and silicon compatibility making them the perfect platform for optoelectronics and nanophotonics. In this work, we explore numerically optical properties of gallium phosphide nanowires governed by their dimensions and study waveguiding, coupling between the two wires and resonant field confinement to unveil nanoscale phenomena paving the way for the fabrication of the integrated optical circuits. Photonic coupling between the two adjacent nanowires is studied in detail to demonstrate good tolerance of the coupling to the distance between the two aligned wires providing losses not exceeding 30% for the gap of 100 nm. The dependence of this coupling is investigated with the wires placed nearby varying their relative position. It is found that due to the resonant properties of a nanowire acting as a Fabry-Perot cavity, two coupled wires represent an attractive system for control over the optical signal processing governed by the signal interference. We explore size-dependent plasmonic behaviors of the metallic Ga nanoparticle enabling GaP nanowire as an antenna-waveguide hybrid system. We demonstrate numerically that variation of the structure dimensions allows the nearfield tailoring. As such, we explore GaP NWs as a versatile platform for integrated photonic circuits.
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Affiliation(s)
- Maria A. Anikina
- Laboratory of Functional Nanomaterials, Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutskiy Lane, 141701 Dolgoprudny, Russia
| | - Prithu Roy
- Department of Physics, ITMO University, Kronverkskii 49, 197101 Saint Petersburg, Russia
| | - Svetlana A. Kadinskaya
- Laboratory of Functional Nanomaterials, Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutskiy Lane, 141701 Dolgoprudny, Russia
| | - Alexey Kuznetsov
- Laboratory of Functional Nanomaterials, Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutskiy Lane, 141701 Dolgoprudny, Russia
| | - Valeriy M. Kondratev
- Laboratory of Functional Nanomaterials, Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutskiy Lane, 141701 Dolgoprudny, Russia
| | - Alexey D. Bolshakov
- Laboratory of Functional Nanomaterials, Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutskiy Lane, 141701 Dolgoprudny, Russia
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5
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Miroshnichenko AS, Neplokh V, Mukhin IS, Islamova RM. Silicone Materials for Flexible Optoelectronic Devices. MATERIALS (BASEL, SWITZERLAND) 2022; 15:8731. [PMID: 36556538 PMCID: PMC9780939 DOI: 10.3390/ma15248731] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/31/2022] [Revised: 12/02/2022] [Accepted: 12/05/2022] [Indexed: 06/17/2023]
Abstract
Polysiloxanes and materials based on them (silicone materials) are of great interest in optoelectronics due to their high flexibility, good film-forming ability, and optical transparency. According to the literature, polysiloxanes are suggested to be very promising in the field of optoelectronics and could be employed in the composition of liquid crystal devices, computer memory drives organic light emitting diodes (OLED), and organic photovoltaic devices, including dye synthesized solar cells (DSSC). Polysiloxanes are also a promising material for novel optoectronic devices, such as LEDs based on arrays of III-V nanowires (NWs). In this review, we analyze the currently existing types of silicone materials and their main properties, which are used in optoelectronic device development.
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Affiliation(s)
- Anna S. Miroshnichenko
- Institute of Chemistry, Saint Petersburg State University, 7/9 Universitetskaya Emb., St. Petersburg 199034, Russia
- ChemBio Cluster, ITMO University, 49 Kronverksky Pr., St. Petersburg 197101, Russia
- Laboratory of Renewable Energy Sources, St. Petersburg Academic University, 8/3 Khlopina Str., St. Petersburg 194021, Russia
| | - Vladimir Neplokh
- Institute of Chemistry, Saint Petersburg State University, 7/9 Universitetskaya Emb., St. Petersburg 199034, Russia
- ChemBio Cluster, ITMO University, 49 Kronverksky Pr., St. Petersburg 197101, Russia
- High School of Engineering Physics, The Great St. Petersburg Polytechnical University, 29 Polytechnicheskaya Str., St. Petersburg 195251, Russia
| | - Ivan S. Mukhin
- Institute of Chemistry, Saint Petersburg State University, 7/9 Universitetskaya Emb., St. Petersburg 199034, Russia
- ChemBio Cluster, ITMO University, 49 Kronverksky Pr., St. Petersburg 197101, Russia
- Laboratory of Renewable Energy Sources, St. Petersburg Academic University, 8/3 Khlopina Str., St. Petersburg 194021, Russia
- High School of Engineering Physics, The Great St. Petersburg Polytechnical University, 29 Polytechnicheskaya Str., St. Petersburg 195251, Russia
| | - Regina M. Islamova
- Institute of Chemistry, Saint Petersburg State University, 7/9 Universitetskaya Emb., St. Petersburg 199034, Russia
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6
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Jansson M, Ishikawa F, Chen WM, Buyanova IA. Designing Semiconductor Nanowires for Efficient Photon Upconversion via Heterostructure Engineering. ACS NANO 2022; 16:12666-12676. [PMID: 35876227 PMCID: PMC9413407 DOI: 10.1021/acsnano.2c04287] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/03/2022] [Accepted: 07/18/2022] [Indexed: 06/15/2023]
Abstract
Energy upconversion via optical processes in semiconductor nanowires (NWs) is attractive for a variety of applications in nano-optoelectronics and nanophotonics. One of the main challenges is to achieve a high upconversion efficiency and, thus, a wide dynamic range of device performance, allowing efficient upconversion even under low excitation power. Here, we demonstrate that the efficiency of energy upconversion via two-photon absorption (TPA) can be drastically enhanced in core/shell NW heterostructures designed to provide a real intermediate TPA step via the band states of the narrow-bandgap region with a long carrier lifetime, fulfilling all the necessary requirements for high-efficiency two-step TPA. We show that, in radial GaAs(P)/GaNAs(P) core/shell NW heterostructures, the upconversion efficiency increases by 500 times as compared with that of the constituent materials, even under an excitation power as low as 100 mW/cm2 that is comparable to the 1 sun illumination. The upconversion efficiency can be further improved by 8 times through engineering the electric-field distribution of the excitation light inside the NWs so that light absorption is maximized within the desired region of the heterostructure. This work demonstrates the effectiveness of our approach in providing efficient photon upconversion by exploring core/shell NW heterostructures, yielding an upconversion efficiency being among the highest reported in semiconductor nanostructures. Furthermore, our work provides design guidelines for enhancing efficiency of energy upconversion in NW heterostructures.
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Affiliation(s)
- Mattias Jansson
- Department
of Physics, Chemistry and Biology, Linköping
University, SE-58183 Linköping, Sweden
| | - Fumitaro Ishikawa
- Graduate
School of Science and Engineering, Ehime
University, 790-8577 Matsuyama, Japan
| | - Weimin M. Chen
- Department
of Physics, Chemistry and Biology, Linköping
University, SE-58183 Linköping, Sweden
| | - Irina A. Buyanova
- Department
of Physics, Chemistry and Biology, Linköping
University, SE-58183 Linköping, Sweden
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7
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Saerens G, Bloch E, Frizyuk K, Sergaeva O, Vogler-Neuling VV, Semenova E, Lebedkina E, Petrov M, Grange R, Timofeeva M. Second-harmonic generation tuning by stretching arrays of GaAs nanowires. NANOSCALE 2022; 14:8858-8864. [PMID: 35697049 PMCID: PMC9219810 DOI: 10.1039/d2nr00641c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/03/2022] [Accepted: 06/02/2022] [Indexed: 06/15/2023]
Abstract
We present a wearable device with III-V nanowires in a flexible polymer, which is used for active mechanical tuning of the second-harmonic generation intensity. An array of vertical GaAs nanowires was grown with metalorganic vapour-phase epitaxy, then embedded in polydimethylsiloxane and detached from the rigid substrate with mechanical peel off. Experimental results show a tunability of the second-harmonic generation intensity by a factor of two for 30% stretching which matches the simulations including the distribution of sizes. We studied the impact of different parameters on the band dispersion and tunability of the second-harmonic generation, such as the pitch, the length, and the diameter. We predict at least three orders of magnitude active mechanical tuning of the nonlinear signal intensity for nanowire arrays. The flexibility of the array together with the resonant wavelength engineering make such structures perspective platforms for future bendable or stretchable nanophotonic devices as light sources or sensors.
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Affiliation(s)
- Grégoire Saerens
- ETH Zurich, Optical Nanomaterial Group, Institute for Quantum Electronics, Department of Physics, 8093 Zürich, Switzerland.
| | - Esther Bloch
- ETH Zurich, Optical Nanomaterial Group, Institute for Quantum Electronics, Department of Physics, 8093 Zürich, Switzerland.
| | - Kristina Frizyuk
- ITMO University, Kronverkskiy prospect 49, 197101 St Petersburg, Russia
| | - Olga Sergaeva
- ITMO University, Kronverkskiy prospect 49, 197101 St Petersburg, Russia
| | - Viola V Vogler-Neuling
- ETH Zurich, Optical Nanomaterial Group, Institute for Quantum Electronics, Department of Physics, 8093 Zürich, Switzerland.
| | - Elizaveta Semenova
- DTU Fotonik, Technical University of Denmark, 2800 Kongens Lyngby, Denmark
- NanoPhoton - Center for Nanophotonics, Technical University of Denmark, 2800 Kongens Lyngby, Denmark
| | | | - Mihail Petrov
- ITMO University, Kronverkskiy prospect 49, 197101 St Petersburg, Russia
| | - Rachel Grange
- ETH Zurich, Optical Nanomaterial Group, Institute for Quantum Electronics, Department of Physics, 8093 Zürich, Switzerland.
| | - Maria Timofeeva
- ETH Zurich, Optical Nanomaterial Group, Institute for Quantum Electronics, Department of Physics, 8093 Zürich, Switzerland.
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8
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Bolshakov AD, Shishkin I, Machnev A, Petrov M, Kirilenko DA, Fedorov VV, Mukhin IS, Ginzburg P. Single GaP nanowire nonlinear characterization with the aid of an optical trap. NANOSCALE 2022; 14:993-1000. [PMID: 34989740 DOI: 10.1039/d1nr04790f] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
Semiconductor nanowires exhibit numerous capabilities to advance the development of future optoelectronic devices. Among the III-V material family, gallium phosphide (GaP) is an attractive platform with low optical absorption and high nonlinear susceptibility, making it especially promising for nanophotonic applications. However, investigation of single nanostructures and their waveguiding properties remains challenging owing to typically planar experimental arrangements. Here we study the linear and nonlinear waveguiding optical properties of a single GaP nanowire in a special experimental layout, where an optically trapped structure is aligned along its major axis. We demonstrate efficient second harmonic generation in individual nanowires and unravel phase matching conditions, linking between linear guiding properties of the structure and its nonlinear tensorial susceptibility. The capability to pick up single nanowires, sort them with the aid of optomechanical manipulation and accurately position pre-tested structures opens a new avenue for the generation of optoelectronic origami-type devices.
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Affiliation(s)
- Alexey D Bolshakov
- Alferov University (formerly St Petersburg Academic University), 194021 St Petersburg, Russia.
- Centre for Photonics and Two-Dimensional Materials, Moscow Institute of Physics and Technology, 141701 Dolgoprudny, Russia
- ITMO University, 197101 St Petersburg, Russia
| | - Ivan Shishkin
- ITMO University, 197101 St Petersburg, Russia
- Department of Electrical Engineering Tel Aviv University Ramat Aviv, Tel Aviv 69978, Israel
| | - Andrey Machnev
- Department of Electrical Engineering Tel Aviv University Ramat Aviv, Tel Aviv 69978, Israel
| | | | - Demid A Kirilenko
- ITMO University, 197101 St Petersburg, Russia
- Ioffe Institute, Saint-Petersburg, 194021, Russia
| | - Vladimir V Fedorov
- Alferov University (formerly St Petersburg Academic University), 194021 St Petersburg, Russia.
- Peter the Great St Petersburg Polytechnic University, 195251, St.Petersburg, Russia
| | - Ivan S Mukhin
- Alferov University (formerly St Petersburg Academic University), 194021 St Petersburg, Russia.
- ITMO University, 197101 St Petersburg, Russia
- Peter the Great St Petersburg Polytechnic University, 195251, St.Petersburg, Russia
| | - Pavel Ginzburg
- Centre for Photonics and Two-Dimensional Materials, Moscow Institute of Physics and Technology, 141701 Dolgoprudny, Russia
- Department of Electrical Engineering Tel Aviv University Ramat Aviv, Tel Aviv 69978, Israel
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9
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Anisotropic Radiation in Heterostructured "Emitter in a Cavity" Nanowire. NANOMATERIALS 2022; 12:nano12020241. [PMID: 35055259 PMCID: PMC8779800 DOI: 10.3390/nano12020241] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/30/2021] [Revised: 12/29/2021] [Accepted: 01/10/2022] [Indexed: 12/25/2022]
Abstract
Tailorable synthesis of axially heterostructured epitaxial nanowires (NWs) with a proper choice of materials allows for the fabrication of novel photonic devices, such as a nanoemitter in the resonant cavity. An example of the structure is a GaP nanowire with ternary GaPAs insertions in the form of nano-sized discs studied in this work. With the use of the micro-photoluminescence technique and numerical calculations, we experimentally and theoretically study photoluminescence emission in individual heterostructured NWs. Due to the high refractive index and near-zero absorption through the emission band, the photoluminescence signal tends to couple into the nanowire cavity acting as a Fabry–Perot resonator, while weak radiation propagating perpendicular to the nanowire axis is registered in the vicinity of each nano-sized disc. Thus, within the heterostructured nanowire, both amplitude and spectrally anisotropic photoluminescent signals can be achieved. Numerical modeling of the nanowire with insertions emitting in infrared demonstrates a decay in the emission directivity and simultaneous rise of the emitters coupling with an increase in the wavelength. The emergence of modulated and non-modulated radiation is discussed, and possible nanophotonic applications are considered.
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10
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Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates. NANOMATERIALS 2021; 11:nano11081949. [PMID: 34443778 PMCID: PMC8400893 DOI: 10.3390/nano11081949] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/24/2021] [Revised: 07/14/2021] [Accepted: 07/26/2021] [Indexed: 12/16/2022]
Abstract
Tailorable synthesis of III-V semiconductor heterostructures in nanowires (NWs) enables new approaches with respect to designing photonic and electronic devices at the nanoscale. We present a comprehensive study of highly controllable self-catalyzed growth of gallium phosphide (GaP) NWs on template-free silicon (111) substrates by molecular beam epitaxy. We report the approach to form the silicon oxide layer, which reproducibly provides a high yield of vertical GaP NWs and control over the NW surface density without a pre-patterned growth mask. Above that, we present the strategy for controlling both GaP NW length and diameter independently in single- or two-staged self-catalyzed growth. The proposed approach can be extended to other III-V NWs.
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11
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Alekseev PA, Borodin BR, Geydt P, Khayrudinov V, Bespalova K, Kirilenko DA, Reznik RR, Nashchekin AV, Haggrén T, Lähderanta E, Cirlin GE, Lipsanen H, Dunaevskiy MS. Effect of crystal structure on the Young's modulus of GaP nanowires. NANOTECHNOLOGY 2021; 32:385706. [PMID: 34116523 DOI: 10.1088/1361-6528/ac0ac7] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/23/2021] [Accepted: 06/11/2021] [Indexed: 06/12/2023]
Abstract
Young's modulus of tapered mixed composition (zinc-blende with a high density of twins and wurtzite with a high density of stacking faults) gallium phosphide (GaP) nanowires (NWs) was investigated by atomic force microscopy. Experimental measurements were performed by obtaining bending profiles of as-grown inclined GaP NWs deformed by applying a constant force to a series of NW surface locations at various distances from the NW/substrate interface. Numerical modeling of experimental data on bending profiles was done by applying Euler-Bernoulli beam theory. Measurements of the nano-local stiffness at different distances from the NW/substrate interface revealed NWs with a non-ideal mechanical fixation at the NW/substrate interface. Analysis of the NWs with ideally fixed base resulted in experimentally measured Young's modulus of 155 ± 20 GPa for ZB NWs, and 157 ± 20 GPa for WZ NWs, respectively, which are in consistence with a theoretically predicted bulk value of 167 GPa. Thus, impacts of the crystal structure (WZ/ZB) and crystal defects on Young's modulus of GaP NWs were found to be negligible.
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Affiliation(s)
| | | | - Pavel Geydt
- Physical Faculty, Novosibirsk State University, Novosibirsk, 630090, Russia
- Department of Physics, LUT University, FI-53850 Lappeenranta, Finland
| | - Vladislav Khayrudinov
- Department of Electronics and Nanoengineering, Micronova, Aalto University, FI-00076 Espoo, Finland
| | - Kristina Bespalova
- Department of Physics, LUT University, FI-53850 Lappeenranta, Finland
- Department of Electrical Engineering and Automation, Aalto University, FI-02150 Espoo, Finland
| | | | - Rodion R Reznik
- St. Petersburg State University, Saint-Petersburg, 199034, Russia
| | | | - Tuomas Haggrén
- Department of Electronics and Nanoengineering, Micronova, Aalto University, FI-00076 Espoo, Finland
| | - Erkki Lähderanta
- Department of Physics, LUT University, FI-53850 Lappeenranta, Finland
| | - George E Cirlin
- St. Petersburg State University, Saint-Petersburg, 199034, Russia
- Alferov University, Saint-Petersburg, 194021, Russia
| | - Harri Lipsanen
- Department of Electronics and Nanoengineering, Micronova, Aalto University, FI-00076 Espoo, Finland
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Luo Z, Ma C, Lin Y, Jiang Q, Liu B, Yang X, Yi X, Qu J, Zhu X, Wang X, Zhou J, Wang X, Chen WM, Buyanova IA, Chen S, Pan A. An Efficient Deep-Subwavelength Second Harmonic Nanoantenna Based on Surface Plasmon-Coupled Dilute Nitride GaNP Nanowires. NANO LETTERS 2021; 21:3426-3434. [PMID: 33872022 DOI: 10.1021/acs.nanolett.0c05115] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
High-index semiconductor nanoantennae represent a powerful platform for nonlinear photon generation. Devices with reduced footprints are pivotal for higher integration capacity and energy efficiency in photonic integrated circuitry (PIC). Here, we report on a deep subwavelength nonlinear antenna based on dilute nitride GaNP nanowires (NWs), whose second harmonic generation (SHG) shows a 5-fold increase by incorporating ∼0.45% of nitrogen (N), in comparison with GaP counterpart. Further integrating with a gold (Au) thin film-based hybrid cavity achieves a significantly boosted SHG output by a factor of ∼380, with a nonlinear conversion efficiency up to 9.4 × 10-6 W-1. In addition, high-density zinc blende (ZB) twin phases were found to tailor the nonlinear radiation profile via dipolar interference, resulting in a highly symmetric polarimetric pattern well-suited for coupling with polarization nano-optics. Our results manifest dilute nitride nanoantenna as promising building blocks for future chip-based nonlinear photonic technology.
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Affiliation(s)
- Ziyu Luo
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, People's Republic of China
| | - Chao Ma
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, People's Republic of China
| | - Yue Lin
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Qi Jiang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, People's Republic of China
| | - Binjie Liu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, People's Republic of China
| | - Xin Yang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, People's Republic of China
| | - Xiao Yi
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, People's Republic of China
| | - Junyu Qu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, People's Republic of China
| | - Xiaoli Zhu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, People's Republic of China
| | - Xiao Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, People's Republic of China
| | - Jun Zhou
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Xingjun Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China
| | - Weimin M Chen
- Department of Physics, Chemistry and Biology, Linköping University, 58183 Linköping, Sweden
| | - Irina A Buyanova
- Department of Physics, Chemistry and Biology, Linköping University, 58183 Linköping, Sweden
| | - Shula Chen
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, People's Republic of China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, People's Republic of China
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Koval OY, Fedorov VV, Bolshakov AD, Fedina SV, Kochetkov FM, Neplokh V, Sapunov GA, Dvoretckaia LN, Kirilenko DA, Shtrom IV, Islamova RM, Cirlin GE, Tchernycheva M, Serov AY, Mukhin IS. Structural and Optical Properties of Self-Catalyzed Axially Heterostructured GaPN/GaP Nanowires Embedded into a Flexible Silicone Membrane. NANOMATERIALS 2020; 10:nano10112110. [PMID: 33114110 PMCID: PMC7690831 DOI: 10.3390/nano10112110] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/05/2020] [Revised: 10/20/2020] [Accepted: 10/21/2020] [Indexed: 01/05/2023]
Abstract
Controlled growth of heterostructured nanowires and mechanisms of their formation have been actively studied during the last decades due to perspectives of their implementation. Here, we report on the self-catalyzed growth of axially heterostructured GaPN/GaP nanowires on Si(111) by plasma-assisted molecular beam epitaxy. Nanowire composition and structural properties were examined by means of Raman microspectroscopy and transmission electron microscopy. To study the optical properties of the synthesized nanoheterostructures, the nanowire array was embedded into the silicone rubber membrane and further released from the growth substrate. The reported approach allows us to study the nanowire optical properties avoiding the response from the parasitically grown island layer. Photoluminescence and Raman studies reveal different nitrogen content in nanowires and parasitic island layer. The effect is discussed in terms of the difference in vapor solid and vapor liquid solid growth mechanisms. Photoluminescence studies at low temperature (5K) demonstrate the transition to the quasi-direct gap in the nanowires typical for diluted nitrides with low N-content. The bright room temperature photoluminescent response demonstrates the potential application of nanowire/polymer matrix in flexible optoelectronic devices.
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Affiliation(s)
- Olga Yu. Koval
- Nanotechnology Research and Education Centre of the Russian Academy of Sciences, Alferov University, Khlopina 8/3, 194021 Saint Petersburg, Russia; (V.V.F.); (A.D.B.); (S.V.F.); (F.M.K.); (V.N.); (G.A.S.); (L.N.D.); (G.E.C.)
- Correspondence:
| | - Vladimir V. Fedorov
- Nanotechnology Research and Education Centre of the Russian Academy of Sciences, Alferov University, Khlopina 8/3, 194021 Saint Petersburg, Russia; (V.V.F.); (A.D.B.); (S.V.F.); (F.M.K.); (V.N.); (G.A.S.); (L.N.D.); (G.E.C.)
- Department of Chemistry, Peter the Great Saint Petersburg Polytechnic University, 195251 St. Petersburg, Russia;
| | - Alexey D. Bolshakov
- Nanotechnology Research and Education Centre of the Russian Academy of Sciences, Alferov University, Khlopina 8/3, 194021 Saint Petersburg, Russia; (V.V.F.); (A.D.B.); (S.V.F.); (F.M.K.); (V.N.); (G.A.S.); (L.N.D.); (G.E.C.)
- School of photonics, ITMO University, Kronverksky Prospekt 49, 197101 Saint Petersburg, Russia;
| | - Sergey V. Fedina
- Nanotechnology Research and Education Centre of the Russian Academy of Sciences, Alferov University, Khlopina 8/3, 194021 Saint Petersburg, Russia; (V.V.F.); (A.D.B.); (S.V.F.); (F.M.K.); (V.N.); (G.A.S.); (L.N.D.); (G.E.C.)
| | - Fedor M. Kochetkov
- Nanotechnology Research and Education Centre of the Russian Academy of Sciences, Alferov University, Khlopina 8/3, 194021 Saint Petersburg, Russia; (V.V.F.); (A.D.B.); (S.V.F.); (F.M.K.); (V.N.); (G.A.S.); (L.N.D.); (G.E.C.)
| | - Vladimir Neplokh
- Nanotechnology Research and Education Centre of the Russian Academy of Sciences, Alferov University, Khlopina 8/3, 194021 Saint Petersburg, Russia; (V.V.F.); (A.D.B.); (S.V.F.); (F.M.K.); (V.N.); (G.A.S.); (L.N.D.); (G.E.C.)
- Department of Chemistry, Peter the Great Saint Petersburg Polytechnic University, 195251 St. Petersburg, Russia;
| | - Georgiy A. Sapunov
- Nanotechnology Research and Education Centre of the Russian Academy of Sciences, Alferov University, Khlopina 8/3, 194021 Saint Petersburg, Russia; (V.V.F.); (A.D.B.); (S.V.F.); (F.M.K.); (V.N.); (G.A.S.); (L.N.D.); (G.E.C.)
| | - Liliia N. Dvoretckaia
- Nanotechnology Research and Education Centre of the Russian Academy of Sciences, Alferov University, Khlopina 8/3, 194021 Saint Petersburg, Russia; (V.V.F.); (A.D.B.); (S.V.F.); (F.M.K.); (V.N.); (G.A.S.); (L.N.D.); (G.E.C.)
| | - Demid A. Kirilenko
- Department of Chemistry, Peter the Great Saint Petersburg Polytechnic University, 195251 St. Petersburg, Russia;
- Ioffe Institute, Politekhnicheskaya 29, 194021 St. Petersburg, Russia
| | - Igor V. Shtrom
- Institute for Analytical Instrumentation of the Russian Academy of Sciences, Rizhsky pr. 26, 190103 St. Petersburg, Russia;
- The Faculty of Physics and the Institute of Chemistry, Saint Petersburg State University, Universitetskaya Emb. 7/9, 199034 St. Petersburg, Russia; (R.M.I.); (A.Y.S.)
| | - Regina M. Islamova
- The Faculty of Physics and the Institute of Chemistry, Saint Petersburg State University, Universitetskaya Emb. 7/9, 199034 St. Petersburg, Russia; (R.M.I.); (A.Y.S.)
| | - George E. Cirlin
- Nanotechnology Research and Education Centre of the Russian Academy of Sciences, Alferov University, Khlopina 8/3, 194021 Saint Petersburg, Russia; (V.V.F.); (A.D.B.); (S.V.F.); (F.M.K.); (V.N.); (G.A.S.); (L.N.D.); (G.E.C.)
- Ioffe Institute, Politekhnicheskaya 29, 194021 St. Petersburg, Russia
- Institute for Analytical Instrumentation of the Russian Academy of Sciences, Rizhsky pr. 26, 190103 St. Petersburg, Russia;
| | - Maria Tchernycheva
- Centre of Nanosciences and Nanotechnologies, UMR 9001 CNRS, University Paris Sud, University Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau CEDEX, France;
| | - Alexey Yu. Serov
- The Faculty of Physics and the Institute of Chemistry, Saint Petersburg State University, Universitetskaya Emb. 7/9, 199034 St. Petersburg, Russia; (R.M.I.); (A.Y.S.)
| | - Ivan S. Mukhin
- School of photonics, ITMO University, Kronverksky Prospekt 49, 197101 Saint Petersburg, Russia;
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