1
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Choi J, Crust KJ, Li L, Lee K, Luo J, So JP, Watanabe K, Taniguchi T, Hwang HY, Mak KF, Shan J, Fuchs GD. Tuning Exciton Emission via Ferroelectric Polarization at a Heterogeneous Interface between a Monolayer Transition Metal Dichalcogenide and a Perovskite Oxide Membrane. NANO LETTERS 2024; 24:8948-8955. [PMID: 38996059 DOI: 10.1021/acs.nanolett.4c01853] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/14/2024]
Abstract
We demonstrate the integration of a thin BaTiO3 (BTO) membrane with monolayer MoSe2 in a dual-gate device that enables in situ manipulation of the BTO ferroelectric polarization with a voltage pulse. While two-dimensional (2D) transition metal dichalcogenides (TMDs) offer remarkable adaptability, their hybrid integration with other families of functional materials beyond the realm of 2D materials has been challenging. Released functional oxide membranes offer a solution for 2D/3D integration via stacking. 2D TMD excitons can serve as a local probe of the ferroelectric polarization in BTO at a heterogeneous interface. Using photoluminescence (PL) of MoSe2 excitons to optically read out the doping level, we find that the relative population of charge carriers in MoSe2 depends sensitively on the ferroelectric polarization. This finding points to a promising avenue for future-generation versatile sensing devices with high sensitivity, fast readout, and diverse applicability for advanced signal processing.
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Affiliation(s)
- Jaehong Choi
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14850, United States
| | - Kevin J Crust
- Department of Physics, Stanford University, Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Lizhong Li
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14850, United States
| | - Kihong Lee
- Department of Physics, Cornell University, Ithaca, New York 14850, United States
| | - Jialun Luo
- Department of Physics, Cornell University, Ithaca, New York 14850, United States
| | - Jae-Pil So
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14850, United States
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Harold Y Hwang
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
- Department of Applied Physics, Stanford University, Stanford, California 94305, United States
| | - Kin Fai Mak
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14850, United States
- Department of Physics, Cornell University, Ithaca, New York 14850, United States
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14850, United States
| | - Jie Shan
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14850, United States
- Department of Physics, Cornell University, Ithaca, New York 14850, United States
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14850, United States
| | - Gregory D Fuchs
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14850, United States
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14850, United States
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2
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Bloom BP, Paltiel Y, Naaman R, Waldeck DH. Chiral Induced Spin Selectivity. Chem Rev 2024; 124:1950-1991. [PMID: 38364021 PMCID: PMC10906005 DOI: 10.1021/acs.chemrev.3c00661] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/13/2023] [Revised: 01/16/2024] [Accepted: 01/23/2024] [Indexed: 02/18/2024]
Abstract
Since the initial landmark study on the chiral induced spin selectivity (CISS) effect in 1999, considerable experimental and theoretical efforts have been made to understand the physical underpinnings and mechanistic features of this interesting phenomenon. As first formulated, the CISS effect refers to the innate ability of chiral materials to act as spin filters for electron transport; however, more recent experiments demonstrate that displacement currents arising from charge polarization of chiral molecules lead to spin polarization without the need for net charge flow. With its identification of a fundamental connection between chiral symmetry and electron spin in molecules and materials, CISS promises profound and ubiquitous implications for existing technologies and new approaches to answering age old questions, such as the homochiral nature of life. This review begins with a discussion of the different methods for measuring CISS and then provides a comprehensive overview of molecules and materials known to exhibit CISS-based phenomena before proceeding to identify structure-property relations and to delineate the leading theoretical models for the CISS effect. Next, it identifies some implications of CISS in physics, chemistry, and biology. The discussion ends with a critical assessment of the CISS field and some comments on its future outlook.
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Affiliation(s)
- Brian P. Bloom
- Department
of Chemistry, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - Yossi Paltiel
- Applied
Physics Department and Center for Nano-Science and Nano-Technology, The Hebrew University of Jerusalem, Jerusalem 9190401, Israel
| | - Ron Naaman
- Department
of Chemical and Biological Physics, Weizmann
Institute, Rehovot 76100, Israel
| | - David H. Waldeck
- Department
of Chemistry, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
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3
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Hu J, Wen X, Yang D, Chen Y, Liu Z, Li D. Lead-Free Chiral Perovskite for High Degree of Circularly Polarized Light Emission and Spin Injection. NANO LETTERS 2024; 24:1001-1008. [PMID: 38198561 DOI: 10.1021/acs.nanolett.3c04575] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/12/2024]
Abstract
We report a zero-dimensional (0D) lead-free chiral perovskite (S-/R-MBA)4Bi2I10 with a high degree of circularly polarized light (CPL) emission. Our 0D lead-free chiral perovskite exhibits an average degree of circular polarization (DOCP) of 19.8% at 78 K under linearly polarized laser excitation, and the maximum DOCP can reach 25.8%, which is 40 times higher than the highest DOCP of 0.5% in all reported lead-free chiral perovskites to the best of our knowledge. The high DOCP of (S-/R-MBA)4Bi2I10 is attributed to the free exciton emission with a Huang-Rhys factor of 2.8. In contrast, all the lead-free chiral perovskites in prior reports are dominant by self-trapped exciton in which the spin relaxation reduces DOCP dramatically. Moreover, we realize the manipulation of the valley degree of freedom of monolayer WSe2 by using the spin injection of the 0D chiral lead-free perovskites. Our results provide a new perspective to develop lead-free chiral perovskite devices for CPL light source, spintronics, and valleytronics.
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Affiliation(s)
- Junchao Hu
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Xinglin Wen
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Dong Yang
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Yingying Chen
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Zeyi Liu
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Dehui Li
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
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4
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Lubert-Perquel D, Acharya S, Johnson JC. Optically Addressing Exciton Spin and Pseudospin in Nanomaterials for Spintronics Applications. ACS APPLIED OPTICAL MATERIALS 2023; 1:1742-1760. [PMID: 38037653 PMCID: PMC10683369 DOI: 10.1021/acsaom.3c00299] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/28/2023] [Revised: 10/26/2023] [Accepted: 10/26/2023] [Indexed: 12/02/2023]
Abstract
Oriented exciton spins that can be generated and manipulated optically are of interest for a range of applications, including spintronics, quantum information science, and neuromorphic computing architectures. Although materials that host such excitons often lack practical coherence times for use on their own, strategic transduction of the magnetic information across interfaces can combine fast modulation with longer-term storage and readout. Several nanostructure systems have been put forward due to their interesting magneto-optical properties and their possible manipulation using circularly polarized light. These material systems are presented here, namely two-dimensional (2D) systems due to the unique spin-valley coupling properties and quantum dots for their exciton fine structure. 2D magnets are also discussed for their anisotropic spin behavior and extensive 2D magnetic states that are not yet fully understood but could pave the way for emergent techniques of magnetic control. This review also details the experimental and theoretical tools to measure and understand these systems along with a discussion on the progress of optical manipulation of spins and magnetic order transitions.
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Affiliation(s)
- Daphné Lubert-Perquel
- Materials, Chemical, and
Computational Science Directorate, National
Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, United States
| | - Swagata Acharya
- Materials, Chemical, and
Computational Science Directorate, National
Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, United States
| | - Justin C. Johnson
- Materials, Chemical, and
Computational Science Directorate, National
Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, United States
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5
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Shrestha S, Li M, Park S, Tong X, DiMarzio D, Cotlet M. Room temperature valley polarization via spin selective charge transfer. Nat Commun 2023; 14:5234. [PMID: 37633986 PMCID: PMC10460417 DOI: 10.1038/s41467-023-40967-7] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/07/2022] [Accepted: 08/17/2023] [Indexed: 08/28/2023] Open
Abstract
The two degenerate valleys in transition metal dichalcogenides can be used to store and process information for quantum information science and technology. A major challenge is maintaining valley polarization at room temperature where phonon-induced intervalley scattering is prominent. Here we demonstrate room temperature valley polarization in heterostructures of monolayer MoS2 and naphthylethylammine based one-dimensional chiral lead halide perovskite. By optically exciting the heterostructures with linearly polarized light close to resonance and measuring the helicity resolved photoluminescence, we obtain a degree of polarization of up to -7% and 8% in MoS2/right-handed (R-(+)-) and left-handed (S-(-)-) 1-(1-naphthyl)ethylammonium lead iodide perovskite, respectively. We attribute this to spin selective charge transfer from MoS2 to the chiral perovskites, where the perovskites act as a spin filter due to their chiral nature. Our study provides a simple, yet robust route to obtain room temperature valley polarization, paving the way for practical valleytronics devices.
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Affiliation(s)
- Shreetu Shrestha
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, 11973, USA.
| | - Mingxing Li
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, 11973, USA
| | - Suji Park
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, 11973, USA
| | - Xiao Tong
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, 11973, USA
| | - Donald DiMarzio
- Northrop Grumman Corporation, One Space Park, Redondo Beach, CA, 90278, USA
| | - Mircea Cotlet
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, 11973, USA.
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6
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Meng K, Guo L, Sun X. Strategies and applications of generating spin polarization in organic semiconductors. NANOSCALE HORIZONS 2023; 8:1132-1154. [PMID: 37424331 DOI: 10.1039/d3nh00101f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/11/2023]
Abstract
The advent of spintronics has undoubtedly revolutionized data storage, processing, and sensing applications. Organic semiconductors (OSCs), characterized by long spin relaxation times (>μs) and abundant spin-dependent properties, have emerged as promising materials for advanced spintronic applications. To successfully implement spin-related functions in organic spintronic devices, the four fundamental processes of spin generation, transport, manipulation, and detection form the main building blocks and are commonly in demand. Thereinto, the effective generation of spin polarization in OSCs is a precondition, but in practice, this has not been an easy task. In this context, considerable efforts have been made on this topic, covering novel materials systems, spin-dependent theories, and device fabrication technologies. In this review, we underline recent advances in external spin injection and organic property-induced spin polarization, according to the distinction between the sources of spin polarization. We focused mainly on summarizing and discussing both the physical mechanism and representative research on spin generation in OSCs, especially for various spin injection methods, organic magnetic materials, the chiral-induced spin selectivity effect, and the spinterface effect. Finally, the challenges and prospects that allow this topic to continue to be dynamic were outlined.
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Affiliation(s)
- Ke Meng
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, P. R. China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Lidan Guo
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, P. R. China.
| | - Xiangnan Sun
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, P. R. China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
- School of Material Science and Engineering, Zhengzhou University, Zhengzhou 450001, P. R. China
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7
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Wu J, Zhang X, You S, Zhu ZK, Zhu T, Wang Z, Li R, Guan Q, Liang L, Niu X, Luo J. Low Detection Limit Circularly Polarized Light Detection Realized by Constructing Chiral Perovskite/Si Heterostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2302443. [PMID: 37156749 DOI: 10.1002/smll.202302443] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/22/2023] [Revised: 04/22/2023] [Indexed: 05/10/2023]
Abstract
Chiral perovskites have been demonstrated as promising candidates for direct circularly polarized light (CPL) detection due to their intrinsic chirality and excellent charge transport ability. However, chiral perovskite-based CPL detectors with both high distinguishability of left- and right-handed optical signals and low detection limit remain unexplored. Here, a heterostructure, (R-MPA)2 MAPb2 I7 /Si (MPA = methylphenethylamine, MA = methylammonium) is constructed, to achieve high-sensitive and low-limit CPL detection. The heterostructures with high crystalline quality and sharp interface exhibit a strong built-in electric field and a suppressed dark current, not only improving the separation and transport of the photogenerated carriers but also laying a foundation for weak CPL signals detection. Consequently, the heterostructure-based CPL detector obtains a high anisotropy factor up to 0.34 with a remarkably low CPL detection limit of 890 nW cm-2 under the self-driven mode. As a pioneering study, this work paves the way for designing high-sensitive CPL detectors that simultaneously have great distinguishing capability and low detection limit of CPL.
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Affiliation(s)
- Jianbo Wu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences Fuzhou, 350002, Fujian, P. R. China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, P. R. China
- University of Chinese Academy of Sciences, 100049, Beijing, P. R. China
| | - Xinyuan Zhang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences Fuzhou, 350002, Fujian, P. R. China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, P. R. China
- University of Chinese Academy of Sciences, 100049, Beijing, P. R. China
| | - Shihai You
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences Fuzhou, 350002, Fujian, P. R. China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, P. R. China
| | - Zeng-Kui Zhu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences Fuzhou, 350002, Fujian, P. R. China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, P. R. China
| | - Tingting Zhu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences Fuzhou, 350002, Fujian, P. R. China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, P. R. China
| | - Ziyang Wang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences Fuzhou, 350002, Fujian, P. R. China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, P. R. China
| | - Ruiqing Li
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences Fuzhou, 350002, Fujian, P. R. China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, P. R. China
- University of Chinese Academy of Sciences, 100049, Beijing, P. R. China
| | - Qianwen Guan
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences Fuzhou, 350002, Fujian, P. R. China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, P. R. China
- University of Chinese Academy of Sciences, 100049, Beijing, P. R. China
| | - Lishan Liang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences Fuzhou, 350002, Fujian, P. R. China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, P. R. China
| | - Xinyi Niu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences Fuzhou, 350002, Fujian, P. R. China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, P. R. China
| | - Junhua Luo
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences Fuzhou, 350002, Fujian, P. R. China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, P. R. China
- University of Chinese Academy of Sciences, 100049, Beijing, P. R. China
- Key Laboratory of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, School of Chemistry and Chemical Engineering, Jiangxi Normal University, Nanchang, Jiangxi, 330022, P. R. China
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8
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Singh S, Gong W, Stevens CE, Hou J, Singh A, Zhang H, Anantharaman SB, Mohite AD, Hendrickson JR, Yan Q, Jariwala D. Valley-Polarized Interlayer Excitons in 2D Chalcogenide-Halide Perovskite-van der Waals Heterostructures. ACS NANO 2023; 17:7487-7497. [PMID: 37010369 DOI: 10.1021/acsnano.2c12546] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Interlayer excitons (IXs) in two-dimensional (2D) heterostructures provide an exciting avenue for exploring optoelectronic and valleytronic phenomena. Presently, valleytronic research is limited to transition metal dichalcogenide (TMD) based 2D heterostructure samples, which require strict lattice (mis) match and interlayer twist angle requirements. Here, we explore a 2D heterostructure system with experimental observation of spin-valley layer coupling to realize helicity-resolved IXs, without the requirement of a specific geometric arrangement, i.e., twist angle or specific thermal annealing treatment of the samples in 2D Ruddlesden-Popper (2DRP) halide perovskite/2D TMD heterostructures. Using first-principle calculations, time-resolved and circularly polarized luminescence measurements, we demonstrate that Rashba spin-splitting in 2D perovskites and strongly coupled spin-valley physics in monolayer TMDs render spin-valley-dependent optical selection rules to the IXs. Consequently, a robust valley polarization of ∼14% with a long exciton lifetime of ∼22 ns is obtained in type-II band aligned 2DRP/TMD heterostructure at ∼1.54 eV measured at 80 K. Our work expands the scope for studying spin-valley physics in heterostructures of disparate classes of 2D semiconductors.
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Affiliation(s)
- Simrjit Singh
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
- Department of Applied Physics and Eindhoven Hendrik Casimir Institute, Eindhoven University of Technology, Eindhoven, 5612 AZ, The Netherlands
| | - Weiyi Gong
- Department of Physics, Northeastern University, Boston, Massachusetts 02115, United States
| | - Christopher E Stevens
- Sensors Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433, United States
- KBR Inc., Beavercreek, Ohio 45431, United States
| | - Jin Hou
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Aditya Singh
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Huiqin Zhang
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Surendra B Anantharaman
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Aditya D Mohite
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Joshua R Hendrickson
- Sensors Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433, United States
| | - Qimin Yan
- Department of Physics, Northeastern University, Boston, Massachusetts 02115, United States
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
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9
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Li F, Zhang H, Li Y, Zhao Y, Liu M, Yang Y, Yao J, Min S, Kan E, Wan Y. Interface Engineering Modulated Valley Polarization in MoS 2/ hBN Heterostructure. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:861. [PMID: 36903739 PMCID: PMC10004763 DOI: 10.3390/nano13050861] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/26/2023] [Revised: 02/15/2023] [Accepted: 02/24/2023] [Indexed: 06/18/2023]
Abstract
Layered transition metal dichalcogenides (TMDs) provide a favorable research platform for the advancement of spintronics and valleytronics because of their unique spin-valley coupling effect, which is attributed to the absence of inversion symmetry coupled with the presence of time-reversal symmetry. To maneuver the valley pseudospin efficiently is of great importance for the fabrication of conceptual devices in microelectronics. Here, we propose a straightforward way to modulate valley pseudospin with interface engineering. An underlying negative correlation between the quantum yield of photoluminescence and the degree of valley polarization was discovered. Enhanced luminous intensities were observed in the MoS2/hBN heterostructure but with a low value of valley polarization, which was in stark contrast to those observed in the MoS2/SiO2 heterostructure. Based on the steady-state and time-resolved optical measurements, we reveal the correlation between exciton lifetime, luminous efficiency, and valley polarization. Our results emphasize the significance of interface engineering for tailoring valley pseudospin in two-dimensional systems and probably advance the progression of the conceptual devices based on TMDs in spintronics and valleytronics.
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Affiliation(s)
- Fang Li
- MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Hui Zhang
- Institute of Physics and Electronic Information, Yunnan Normal University, Kunming 650500, China
| | - You Li
- MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Yibin Zhao
- MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Mingyan Liu
- MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Yunwei Yang
- MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Jiamin Yao
- MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Shaolong Min
- MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Erjun Kan
- MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Yi Wan
- MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, China
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10
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Zhu T, Zhang K, Ji C, Zhang X, Ye H, Zou Y, Luo J. Multilayered Alternating-Cations-Intercalation Chiral Hybrid Perovskites with High Circular Polarization Sensitivity. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2203571. [PMID: 36344457 DOI: 10.1002/smll.202203571] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/09/2022] [Revised: 10/04/2022] [Indexed: 06/16/2023]
Abstract
Multilayered chiral hybrid perovskites are highly desired for highly-sensitive circularly polarized light (CPL) detection rooted in their efficient charge transport and strong chiroptical activity. However, designing multilayered chiral hybrid perovskites remains a huge challenge. Here, through pairing achiral ethylamine (EA)-chiral arylamine in the interlayer space, multilayered chiral alternating cations intercalation-type (ACI) hybrid perovskites (R-/S-PPA) EA2 Pb2 Br7 (PPA = 1-phenylpropylamine) are successfully obtained. Significantly, perovskitizer EA extends the thickness of the quantum well and alternating space cation EA greatly alleviates in-plane tilting distortions of adjacent metal halide octahedra, providing fast channels for in-plane carrier transport. Consequently, single-crystal photodetectors of (R-/S-PPA) EA2 Pb2 Br7 exhibit high circular polarization sensitivity with a large anisotropy factor of 0.3, which falls around the highest value among the layered hybrid perovskites. In addition, a fast responding rate (τr )of 308 µs and a high CPL-detectivity of 8 × 1012 Jones are also presented. This work opens up a new perspective to design multilayered chiral hybrid perovskites for high-sensitive CPL detection.
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Affiliation(s)
- Tingting Zhu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, P. R. China
| | - Kun Zhang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai Institute of Technical Physics, Shanghai, 200083, China
| | - Chengmin Ji
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
| | - Xinyuan Zhang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Huang Ye
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yuanchen Zou
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai Institute of Technical Physics, Shanghai, 200083, China
| | - Junhua Luo
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, P. R. China
- School of Microelectronics, Shanghai University, Shanghai, 201800, China
- School of Chemistry and Chemical Engineering, Jiangxi Normal University, Nanchang, 330022, China
- Fujian Science & Technology Innovation Laboratory for Optoelectric Information of China, Fuzhou, 350108, China
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11
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Yao W, Yang D, Chen Y, Hu J, Li J, Li D. Layer-Number Engineered Momentum-Indirect Interlayer Excitons with Large Spectral Tunability. NANO LETTERS 2022; 22:7230-7237. [PMID: 36036787 DOI: 10.1021/acs.nanolett.2c02742] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Interlayer excitons (IXs) in type II van der Waals (vdW) heterostructures are equipped with an oriented permanent dipole moment and long lifetime and thus would allow promising applications in excitonic and optoelectronic devices. However, based on the widely studied heterostructures of transition-metal dichalcogenides (TMDs), IX emission is greatly influenced by the lattice mismatch and geometric misalignment between the constituent layers, increasing the complexity of the device fabrication. Here, we report on the robust momentum-indirect IX emission in TMD/two-dimensional (2D) perovskite vdW heterostructures, which were fabricated without considering the orientation arrangement or momentum mismatch. The IXs show a large diffusion coefficient of ∼10 cm2 s-1, and importantly the IX emission energy can be widely tuned from 1.3 to 1.6 eV via changing the layer number of the 2D perovskite or the thickness of TMD flakes, shedding light on the applications of vdW interface engineering to broad-spectrum optoelectronics.
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Affiliation(s)
- Wendian Yao
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Dong Yang
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Yingying Chen
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Junchao Hu
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Junze Li
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Dehui Li
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
- Wuhan National Laboratory for Optoelectronics, Optical Valley Laboratory, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
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12
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Zhang X, Ye H, Liang L, Niu X, Wu J, Luo J. Direct Detection of Near-Infrared Circularly Polarized Light via Precisely Designed Chiral Perovskite Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2022; 14:36781-36788. [PMID: 35917147 DOI: 10.1021/acsami.2c07208] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Chiral metal halide perovskites (CMHPs) have recently shown great potential for direct circularly polarized light (CPL) detection. However, owing to the limited cutoff wavelength edge of these CMHPs, most of the detectors presented thus far are characterized only in the ultraviolet and visible range; CMHPs that target at the near-infrared (NIR) region are still greatly desired. Here, we design a novel CMHP heterostructure, synthesized via solution-processed epitaxial growth of crystalline 3D MAPbI3 on a 2D chiral (R-BPEA)2PbI4 (R-BPEA = (R)-1-(4-bromophenyl)ethylammonium) crystal, and provide the first demonstration of self-powered direct NIR-CPL detection. Compared with individual chiral (R-BPEA)2PbI4, the heterostructure not only retains the spin selectivity but also allows much broader absorbance, especially beyond 780 nm, where the (R-BPEA)2PbI4 cannot absorb. Furthermore, the built-in electric potential in the heterojunction forces spontaneous separation/transport of photogenerated carriers, enabling the fabrication of devices operating without external energy supply. By making use of the abovementioned advantages, the self-powered CPL detectors of the (R-BPEA)2PbI4/MAPbI3 heterostructures hence show competitive circular polarization sensitivity at 785 nm with a high anisotropy factor of up to 0.25. In addition, a large on/off switching ratio of ∼105 and an impressive detectivity of ∼1010 Jones are also achieved. As a pioneer study, our results may broaden the material scope for future chiroptical devices based on CMHPs.
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Affiliation(s)
- Xinyuan Zhang
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, P. R. China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Huang Ye
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Lishan Liang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
| | - Xinyi Niu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
| | - Jianbo Wu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Junhua Luo
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, P. R. China
- School of Chemistry and Chemical Engineering, Jiangxi Normal University, Nanchang 330022, China
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, China
- University of Chinese Academy of Sciences, Beijing 100049, China
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13
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Shang Z, Liu T, Yang Q, Cui S, Xu K, Zhang Y, Deng J, Zhai T, Wang X. Chiral-Molecule-Based Spintronic Devices. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2203015. [PMID: 35836101 DOI: 10.1002/smll.202203015] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/15/2022] [Revised: 06/19/2022] [Indexed: 06/15/2023]
Abstract
Spintronics and molecular chemistry have achieved remarkable achievements separately. Their combination can apply the superiority of molecular diversity to intervene or manipulate the spin-related properties. It inevitably brings in a new type of functional devices with a molecular interface, which has become an emerging field in information storage and processing. Normally, spin polarization has to be realized by magnetic materials as manipulated by magnetic fields. Recently, chiral-induced spin selectivity (CISS) was discovered surprisingly that non-magnetic chiral molecules can generate spin polarization through their structural chirality. Here, the recent progress of integrating the strengths of molecular chemistry and spintronics is reviewed by introducing the experimental results, theoretical models, and device performances of the CISS effect. Compared to normal ferromagnetic metals, CISS originating from a chiral structure has great advantages of high spin polarization, excellent interface, simple preparation process, and low cost. It has the potential to obtain high efficiency of spin injection into metals and semiconductors, getting rid of magnetic fields and ferromagnetic electrodes. The physical mechanisms, unique advantages, and device performances of CISS are sequentially clarified, revealing important issues to current scientific research and industrial applications. This mini-review points out a key technology of information storage for future spintronic devices without magnetic components.
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Affiliation(s)
- Zixuan Shang
- Department of Physics and Optoelectronic Engineering, Faculty of Science, Beijing University of Technology, Beijing, 100124, P. R. China
| | - Tianhan Liu
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, CA, 90095, USA
| | - Qianqian Yang
- Department of Physics and Optoelectronic Engineering, Faculty of Science, Beijing University of Technology, Beijing, 100124, P. R. China
| | - Shuainan Cui
- Department of Physics and Optoelectronic Engineering, Faculty of Science, Beijing University of Technology, Beijing, 100124, P. R. China
| | - Kailin Xu
- Department of Physics and Optoelectronic Engineering, Faculty of Science, Beijing University of Technology, Beijing, 100124, P. R. China
| | - Yu Zhang
- Department of Physics and Optoelectronic Engineering, Faculty of Science, Beijing University of Technology, Beijing, 100124, P. R. China
| | - Jinxiang Deng
- Department of Physics and Optoelectronic Engineering, Faculty of Science, Beijing University of Technology, Beijing, 100124, P. R. China
| | - Tianrui Zhai
- Department of Physics and Optoelectronic Engineering, Faculty of Science, Beijing University of Technology, Beijing, 100124, P. R. China
| | - Xiaolei Wang
- Department of Physics and Optoelectronic Engineering, Faculty of Science, Beijing University of Technology, Beijing, 100124, P. R. China
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14
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Kwon J, Choi WJ, Jeong U, Jung W, Hwang I, Park KH, Ko SG, Park SM, Kotov NA, Yeom J. Recent advances in chiral nanomaterials with unique electric and magnetic properties. NANO CONVERGENCE 2022; 9:32. [PMID: 35851425 PMCID: PMC9294134 DOI: 10.1186/s40580-022-00322-w] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/27/2022] [Accepted: 06/21/2022] [Indexed: 06/02/2023]
Abstract
Research on chiral nanomaterials (NMs) has grown radically with a rapid increase in the number of publications over the past decade. It has attracted a large number of scientists in various fields predominantly because of the emergence of unprecedented electric, optical, and magnetic properties when chirality arises in NMs. For applications, it is particularly informative and fascinating to investigate how chiral NMs interact with electromagnetic waves and magnetic fields, depending on their intrinsic composition properties, atomic distortions, and assembled structures. This review provides an overview of recent advances in chiral NMs, such as semiconducting, metallic, and magnetic nanostructures.
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Affiliation(s)
- Junyoung Kwon
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Won Jin Choi
- Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, 48109, USA
- Lawrence Livermore National Laboratory, 7000 East Ave., Livermore, CA, 94551, USA
| | - Uichang Jeong
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Wookjin Jung
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Inkook Hwang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Ki Hyun Park
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Seowoo Genevieve Ko
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Sung Min Park
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Nicholas A Kotov
- Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI, 48109, USA.
- Department of Chemical Engineering, University of Michigan, Ann Arbor, MI, 48109, USA.
- Biointerfaces Institute, University of Michigan, Ann Arbor, MI, 48109, USA.
| | - Jihyeon Yeom
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea.
- Department of Biological Sciences, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea.
- Institute for Health Science and Technology, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea.
- Institute for the Nanocentury, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea.
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15
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Karpińska M, Jasiński J, Kempt R, Ziegler JD, Sansom H, Taniguchi T, Watanabe K, Snaith HJ, Surrente A, Dyksik M, Maude DK, Kłopotowski Ł, Chernikov A, Kuc A, Baranowski M, Plochocka P. Interlayer excitons in MoSe 2/2D perovskite hybrid heterostructures - the interplay between charge and energy transfer. NANOSCALE 2022; 14:8085-8095. [PMID: 35611659 DOI: 10.1039/d2nr00877g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
van der Waals crystals have opened a new and exciting chapter in heterostructure research, removing the lattice matching constraint characteristics of epitaxial semiconductors. They provide unprecedented flexibility for heterostructure design. Combining two-dimensional (2D) perovskites with other 2D materials, in particular transition metal dichalcogenides (TMDs), has recently emerged as an intriguing way to design hybrid opto-electronic devices. However, the excitation transfer mechanism between the layers (charge or energy transfer) remains to be elucidated. Here, we investigate PEA2PbI4/MoSe2 and (BA)2PbI4/MoSe2 heterostructures by combining optical spectroscopy and density functional theory (DFT) calculations. We show that band alignment facilitates charge transfer. Namely, holes are transferred from TMDs to 2D perovskites, while the electron transfer is blocked, resulting in the formation of interlayer excitons. Moreover, we show that the energy transfer mechanism can be turned on by an appropriate alignment of the excitonic states, providing a rule of thumb for the deterministic control of the excitation transfer mechanism in TMD/2D-perovskite heterostructures.
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Affiliation(s)
- M Karpińska
- Laboratoire National des Champs Magnétiques Intenses, UPR 3228, CNRS-UGA-UPS-INSA, Grenoble and Toulouse, France.
- Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, Poland
| | - J Jasiński
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, 50-370 Wroclaw, Poland.
| | - R Kempt
- Technische Universität Dresden, Bergstr. 66c, 01062 Dresden, Germany
| | - J D Ziegler
- Department of Physics, University of Regensburg, Regensburg D-93053, Germany
| | - H Sansom
- University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, UK
| | - T Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Ibaraki 305-004, Japan
| | - K Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Ibaraki 305-004, Japan
| | - H J Snaith
- University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, UK
| | - A Surrente
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, 50-370 Wroclaw, Poland.
| | - M Dyksik
- Laboratoire National des Champs Magnétiques Intenses, UPR 3228, CNRS-UGA-UPS-INSA, Grenoble and Toulouse, France.
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, 50-370 Wroclaw, Poland.
| | - D K Maude
- Laboratoire National des Champs Magnétiques Intenses, UPR 3228, CNRS-UGA-UPS-INSA, Grenoble and Toulouse, France.
| | - Ł Kłopotowski
- Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, Poland
| | - A Chernikov
- Department of Physics, University of Regensburg, Regensburg D-93053, Germany
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Würzburg-Dresden Cluster of Excellence ct.qmat, Technische Universität Dresden, 01062 Dresden, Germany
| | - A Kuc
- Helmholtz-Zentrum Dresden-Rossendorf, Permoserstraße 15, 04318 Leipzig, Germany.
| | - M Baranowski
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, 50-370 Wroclaw, Poland.
| | - P Plochocka
- Laboratoire National des Champs Magnétiques Intenses, UPR 3228, CNRS-UGA-UPS-INSA, Grenoble and Toulouse, France.
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, 50-370 Wroclaw, Poland.
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16
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Perez CM, Ghosh D, Prezhdo O, Nie W, Tretiak S, Neukirch A. Point Defects in Two-Dimensional Ruddlesden-Popper Perovskites Explored with Ab Initio Calculations. J Phys Chem Lett 2022; 13:5213-5219. [PMID: 35670577 DOI: 10.1021/acs.jpclett.2c00575] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional Ruddlesden-Popper (RP) halide perovskites stand out as excellent layered materials with favorable optoelectronic properties for efficient light-emitting, spintronic, and other spin-related applications. However, properties often determined by defects are not well understood in these perovskite systems. This work investigates the ground state electronic structure of commonly formed defects in a typical RP perovskite structure by density functional theory. Our study reveals that these 2D perovskites generally retain their defect tolerance with limited perturbation of the electronic structure in the case of neutral-type point defects. In contrast, donor/acceptor defects induce deep midgap states, potentially causing harm to the material's electronic performance. To retain positive intrinsic properties, the halide vacancies and interstitial defects should be avoided. The observed strong electron localization results in trap states and consequently leads to reduced device performance. This understanding can guide experimental efforts that aim for improved 2D halide perovskite-based device performance.
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Affiliation(s)
- Carlos Mora Perez
- Department of Chemistry, University of Southern California, Los Angeles, California 90089, United States
| | - Dibyajyoti Ghosh
- Department of Material Science and Engineering and Department of Chemistry, Institute of Technology, Delhi, Hauz Khas, New Delhi 110016, India
| | - Oleg Prezhdo
- Department of Chemistry, University of Southern California, Los Angeles, California 90089, United States
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17
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Zhan G, Zhang J, Zhang L, Ou Z, Yang H, Qian Y, Zhang X, Xing Z, Zhang L, Li C, Zhong J, Yuan J, Cao Y, Zhou D, Chen X, Ma H, Song X, Zha C, Huang X, Wang J, Wang T, Huang W, Wang L. Stimulating and Manipulating Robust Circularly Polarized Photoluminescence in Achiral Hybrid Perovskites. NANO LETTERS 2022; 22:3961-3968. [PMID: 35507685 DOI: 10.1021/acs.nanolett.2c00482] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Circularly polarized light (CPL) is essential for optoelectronic and chiro-spintronic applications. Hybrid perovskites, as star optoelectronic materials, have demonstrated CPL activity, which is, however, mostly limited to chiral perovskites. Here, we develop a simple, general, and efficient strategy to stimulate CPL activity in achiral perovskites, which possess rich species, efficient luminescence, and tunable bandgaps. With the formation of van der Waals heterojunctions between chiral and achiral perovskites, a nonequilibrium spin population and thus CPL activity are realized in achiral perovskites by receiving spin-polarized electrons from chiral perovskites. The polarization degree of room-temperature CPL in achiral perovskites is at least one order of magnitude higher than in chiral ones. The CPL polarization degree and emission wavelengths of achiral perovskites can be flexibly designed by tuning chemical compositions, operating temperature, or excitation wavelengths. We anticipate that unlimited types of achiral perovskites can be endowed with CPL activity, benefiting their applications in integrated CPL sources and detectors.
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Affiliation(s)
- Guixiang Zhan
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Junran Zhang
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Linghai Zhang
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Zhenwei Ou
- School of Physics and Technology, Center for Nanoscience and Nanotechnology, and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
| | - Hongyu Yang
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Yuchi Qian
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Xu Zhang
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Ziyue Xing
- Frontiers Science Center for Flexible Electronics, Key Laboratory of Flexible Electronics, Shaanxi Institute of Flexible Electronics, Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an 710072, China
| | - Le Zhang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Congzhou Li
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Jingxian Zhong
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Jiaxiao Yuan
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Yang Cao
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Dawei Zhou
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Xiaolong Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Huifang Ma
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Xuefen Song
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Chenyang Zha
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Xiao Huang
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Jianpu Wang
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Ti Wang
- School of Physics and Technology, Center for Nanoscience and Nanotechnology, and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
| | - Wei Huang
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
- Frontiers Science Center for Flexible Electronics, Key Laboratory of Flexible Electronics, Shaanxi Institute of Flexible Electronics, Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an 710072, China
| | - Lin Wang
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
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18
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Aiello CD, Abendroth JM, Abbas M, Afanasev A, Agarwal S, Banerjee AS, Beratan DN, Belling JN, Berche B, Botana A, Caram JR, Celardo GL, Cuniberti G, Garcia-Etxarri A, Dianat A, Diez-Perez I, Guo Y, Gutierrez R, Herrmann C, Hihath J, Kale S, Kurian P, Lai YC, Liu T, Lopez A, Medina E, Mujica V, Naaman R, Noormandipour M, Palma JL, Paltiel Y, Petuskey W, Ribeiro-Silva JC, Saenz JJ, Santos EJG, Solyanik-Gorgone M, Sorger VJ, Stemer DM, Ugalde JM, Valdes-Curiel A, Varela S, Waldeck DH, Wasielewski MR, Weiss PS, Zacharias H, Wang QH. A Chirality-Based Quantum Leap. ACS NANO 2022; 16:4989-5035. [PMID: 35318848 PMCID: PMC9278663 DOI: 10.1021/acsnano.1c01347] [Citation(s) in RCA: 58] [Impact Index Per Article: 29.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/04/2023]
Abstract
There is increasing interest in the study of chiral degrees of freedom occurring in matter and in electromagnetic fields. Opportunities in quantum sciences will likely exploit two main areas that are the focus of this Review: (1) recent observations of the chiral-induced spin selectivity (CISS) effect in chiral molecules and engineered nanomaterials and (2) rapidly evolving nanophotonic strategies designed to amplify chiral light-matter interactions. On the one hand, the CISS effect underpins the observation that charge transport through nanoscopic chiral structures favors a particular electronic spin orientation, resulting in large room-temperature spin polarizations. Observations of the CISS effect suggest opportunities for spin control and for the design and fabrication of room-temperature quantum devices from the bottom up, with atomic-scale precision and molecular modularity. On the other hand, chiral-optical effects that depend on both spin- and orbital-angular momentum of photons could offer key advantages in all-optical and quantum information technologies. In particular, amplification of these chiral light-matter interactions using rationally designed plasmonic and dielectric nanomaterials provide approaches to manipulate light intensity, polarization, and phase in confined nanoscale geometries. Any technology that relies on optimal charge transport, or optical control and readout, including quantum devices for logic, sensing, and storage, may benefit from chiral quantum properties. These properties can be theoretically and experimentally investigated from a quantum information perspective, which has not yet been fully developed. There are uncharted implications for the quantum sciences once chiral couplings can be engineered to control the storage, transduction, and manipulation of quantum information. This forward-looking Review provides a survey of the experimental and theoretical fundamentals of chiral-influenced quantum effects and presents a vision for their possible future roles in enabling room-temperature quantum technologies.
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Affiliation(s)
- Clarice D. Aiello
- California
NanoSystems Institute, University of California,
Los Angeles, Los Angeles, California 90095, United States
- Department
of Electrical and Computer Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - John M. Abendroth
- Laboratory
for Solid State Physics, ETH Zürich, Zürich 8093, Switzerland
| | - Muneer Abbas
- Department
of Microbiology, Howard University, Washington, D.C. 20059, United States
| | - Andrei Afanasev
- Department
of Physics, George Washington University, Washington, D.C. 20052, United States
| | - Shivang Agarwal
- Department
of Electrical and Computer Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Amartya S. Banerjee
- California
NanoSystems Institute, University of California,
Los Angeles, Los Angeles, California 90095, United States
- Department
of Materials Science and Engineering, University
of California, Los Angeles, Los Angeles, California 90095, United States
| | - David N. Beratan
- Departments
of Chemistry, Biochemistry, and Physics, Duke University, Durham, North Carolina 27708, United States
| | - Jason N. Belling
- California
NanoSystems Institute, University of California,
Los Angeles, Los Angeles, California 90095, United States
- Department
of Chemistry and Biochemistry, University
of California, Los Angeles, Los Angeles, California 90095, United States
| | - Bertrand Berche
- Laboratoire
de Physique et Chimie Théoriques, UMR Université de Lorraine-CNRS, 7019 54506 Vandœuvre les
Nancy, France
| | - Antia Botana
- Department
of Physics, Arizona State University, Tempe, Arizona 85287, United States
| | - Justin R. Caram
- Department
of Chemistry and Biochemistry, University
of California, Los Angeles, Los Angeles, California 90095, United States
| | - Giuseppe Luca Celardo
- Institute
of Physics, Benemerita Universidad Autonoma
de Puebla, Apartado Postal J-48, 72570, Mexico
- Department
of Physics and Astronomy, University of
Florence, 50019 Sesto Fiorentino, Italy
| | - Gianaurelio Cuniberti
- Institute
for Materials Science and Max Bergmann Center of Biomaterials, Dresden University of Technology, 01062 Dresden, Germany
| | - Aitzol Garcia-Etxarri
- Donostia
International Physics Center, Paseo Manuel de Lardizabal 4, 20018 Donostia, San Sebastian, Spain
- IKERBASQUE,
Basque Foundation for Science, Maria Diaz de Haro 3, 48013 Bilbao, Spain
| | - Arezoo Dianat
- Institute
for Materials Science and Max Bergmann Center of Biomaterials, Dresden University of Technology, 01062 Dresden, Germany
| | - Ismael Diez-Perez
- Department
of Chemistry, Faculty of Natural and Mathematical Sciences, King’s College London, 7 Trinity Street, London SE1 1DB, United Kingdom
| | - Yuqi Guo
- School
for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Rafael Gutierrez
- Institute
for Materials Science and Max Bergmann Center of Biomaterials, Dresden University of Technology, 01062 Dresden, Germany
| | - Carmen Herrmann
- Department
of Chemistry, University of Hamburg, 20146 Hamburg, Germany
| | - Joshua Hihath
- Department
of Electrical and Computer Engineering, University of California, Davis, Davis, California 95616, United States
| | - Suneet Kale
- School
of Molecular Sciences, Arizona State University, Tempe, Arizona 85287, United States
| | - Philip Kurian
- Quantum
Biology Laboratory, Graduate School, Howard
University, Washington, D.C. 20059, United States
| | - Ying-Cheng Lai
- School
of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, United States
| | - Tianhan Liu
- California
NanoSystems Institute, University of California,
Los Angeles, Los Angeles, California 90095, United States
- Department
of Chemistry and Biochemistry, University
of California, Los Angeles, Los Angeles, California 90095, United States
| | - Alexander Lopez
- Escuela
Superior Politécnica del Litoral, ESPOL, Campus Gustavo Galindo Km. 30.5 Vía Perimetral, PO Box 09-01-5863, Guayaquil 090902, Ecuador
| | - Ernesto Medina
- Departamento
de Física, Colegio de Ciencias e Ingeniería, Universidad San Francisco de Quito, Av. Diego de Robles
y Vía Interoceánica, Quito 170901, Ecuador
| | - Vladimiro Mujica
- School
of Molecular Sciences, Arizona State University, Tempe, Arizona 85287, United States
- Kimika
Fakultatea, Euskal Herriko Unibertsitatea, 20080 Donostia, Euskadi, Spain
| | - Ron Naaman
- Department
of Chemical and Biological Physics, Weizmann
Institute of Science, Rehovot 76100, Israel
| | - Mohammadreza Noormandipour
- Department
of Electrical and Computer Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States
- TCM Group,
Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - Julio L. Palma
- Department
of Chemistry, Pennsylvania State University, Lemont Furnace, Pennsylvania 15456, United States
| | - Yossi Paltiel
- Applied
Physics Department and the Center for Nano-Science and Nano-Technology, Hebrew University of Jerusalem, Jerusalem 91904, Israel
| | - William Petuskey
- School
of Molecular Sciences, Arizona State University, Tempe, Arizona 85287, United States
| | - João Carlos Ribeiro-Silva
- Laboratory
of Genetics and Molecular Cardiology, Heart Institute, University of São Paulo Medical School, 05508-900 São
Paulo, Brazil
| | - Juan José Saenz
- Donostia
International Physics Center, Paseo Manuel de Lardizabal 4, 20018 Donostia, San Sebastian, Spain
- IKERBASQUE,
Basque Foundation for Science, Maria Diaz de Haro 3, 48013 Bilbao, Spain
| | - Elton J. G. Santos
- Institute
for Condensed Matter Physics and Complex Systems, School of Physics
and Astronomy, The University of Edinburgh, Edinburgh EH9 3FD, United Kingdom
- Higgs Centre
for Theoretical Physics, The University
of Edinburgh, Edinburgh, EH9 3FD, United Kingdom
| | - Maria Solyanik-Gorgone
- Department
of Electrical and Computer Engineering, George Washington University, Washington, D.C. 20052, United States
| | - Volker J. Sorger
- Department
of Electrical and Computer Engineering, George Washington University, Washington, D.C. 20052, United States
| | - Dominik M. Stemer
- California
NanoSystems Institute, University of California,
Los Angeles, Los Angeles, California 90095, United States
- Department
of Materials Science and Engineering, University
of California, Los Angeles, Los Angeles, California 90095, United States
| | - Jesus M. Ugalde
- Kimika
Fakultatea, Euskal Herriko Unibertsitatea, 20080 Donostia, Euskadi, Spain
| | - Ana Valdes-Curiel
- California
NanoSystems Institute, University of California,
Los Angeles, Los Angeles, California 90095, United States
- Department
of Electrical and Computer Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Solmar Varela
- School
of Chemical Sciences and Engineering, Yachay
Tech University, 100119 Urcuquí, Ecuador
| | - David H. Waldeck
- Department
of Chemistry, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - Michael R. Wasielewski
- Department
of Chemistry, Center for Molecular Quantum Transduction, and Institute
for Sustainability and Energy at Northwestern, Northwestern University, Evanston, Illinois 60208-3113, United States
| | - Paul S. Weiss
- California
NanoSystems Institute, University of California,
Los Angeles, Los Angeles, California 90095, United States
- Department
of Materials Science and Engineering, University
of California, Los Angeles, Los Angeles, California 90095, United States
- Department
of Chemistry and Biochemistry, University
of California, Los Angeles, Los Angeles, California 90095, United States
- Department
of Bioengineering, University of California,
Los Angeles, Los Angeles, California, 90095, United States
| | - Helmut Zacharias
- Center
for Soft Nanoscience, University of Münster, 48149 Münster, Germany
| | - Qing Hua Wang
- School
for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, United States
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19
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Baranowski M, Surrente A, Plochocka P. Two Dimensional Perovskites/Transition Metal Dichalcogenides Heterostructures: Puzzles and Challenges. Isr J Chem 2021. [DOI: 10.1002/ijch.202100120] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
Affiliation(s)
- Michal Baranowski
- Department of Experimental Physics Faculty of Fundamental Problems of Technology Wroclaw University of Science and Technology 50-370 Wroclaw Poland
| | - Alessandro Surrente
- Department of Experimental Physics Faculty of Fundamental Problems of Technology Wroclaw University of Science and Technology 50-370 Wroclaw Poland
| | - Paulina Plochocka
- Department of Experimental Physics Faculty of Fundamental Problems of Technology Wroclaw University of Science and Technology 50-370 Wroclaw Poland
- Laboratoire National des Champs Magnétiques Intenses UPR 3228 CNRS-UGA-UPS-INSA 38042, 31400 Grenoble, Toulouse France
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20
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Zhang X, Weng W, Li L, Wu H, Yao Y, Wang Z, Liu X, Lin W, Luo J. Heterogeneous Integration of Chiral Lead-Chloride Perovskite Crystals with Si Wafer for Boosted Circularly Polarized Light Detection in Solar-Blind Ultraviolet Region. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2102884. [PMID: 34480523 DOI: 10.1002/smll.202102884] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/17/2021] [Revised: 06/20/2021] [Indexed: 06/13/2023]
Abstract
Chiral hybrid organic-inorganic perovskites (HOIPs) have been well developed for circularly polarized light (CPL) detection, while new members that target at solar-blind ultraviolet (UV) region remain completely unexplored. Here, an effective design strategy to demonstrate circular polarization-sensitive solar-blind UV photodetection by growing wide-bandgap chiral HOIP [(R)-MPA]2 PbCl4 ((R)-MPA = methylphenethylammonium) single crystals onto silicon wafers, with well-defined heterostructures, is reported. The solid mechanical and electrical connection between the chiral HOIP and silicon wafer results in strong built-in electric field at heterojunction, providing a desirable driving force for separating/transporting carriers generated under CPL excitation at 266 nm. Unexpectedly, during such a transport process, not only the chirality of HOIP crystal is transferred to the heterostructure, but also the circular polarization sensitivity is significantly amplified. Consequently, anisotropy factor of the resultant detectors can reach up to 0.4 at zero bias, which is much higher than that of the pristine single-phase chiral HOIP (≈0.1), reaching the highest among the reported CPL-UV photodetectors. As far as we know, the integration of chiral HOIP crystals with silicon technology is unprecedent, which paves a way for designing boosted-performance CPL detectors in solar-blind UV region as well as for other advanced optoelectronic devices.
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Affiliation(s)
- Xinyuan Zhang
- State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Wen Weng
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, P. R. China
- Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, China
| | - Lina Li
- State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, P. R. China
| | - Hongchun Wu
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, P. R. China
- Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, China
| | - Yunpeng Yao
- State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
| | - Ziyang Wang
- State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
| | - Xitao Liu
- State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, P. R. China
| | - Wenxiong Lin
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, P. R. China
- Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, China
| | - Junhua Luo
- State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, P. R. China
- School of Chemistry and Chemical Engineering, Jiangxi Normal University, Nangchang, 330022, P. R. China
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21
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Wang H, Ma J, Li D. Two-Dimensional Hybrid Perovskite-Based van der Waals Heterostructures. J Phys Chem Lett 2021; 12:8178-8187. [PMID: 34415173 DOI: 10.1021/acs.jpclett.1c02290] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) hybrid perovskites, as newly emerging materials, have become the center of attention in optoelectronic fields within a few years because of their unique optoelectronic properties, including tunable bandgap, long carrier diffusion length, and high absorption coefficient. 2D perovskite-based van der Waals heterostructures via integration of 2D perovskites with other layered materials provide new platforms for many optoelectronic devices with prominent performance, such as photodetectors, light-emitting diodes (LEDs), and phototransistors. In this Perspective, the unique properties of 2D perovskites will be first introduced to explore why this material is attractive and popular. Subsequently, various types of heterostructures based on 2D perovskites will be illustrated, including the heterostructure construction approaches as well as their optical and optoelectronic applications. Finally, potential research directions based on 2D perovskite heterostructures are also proposed.
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Affiliation(s)
- Haizhen Wang
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Jiaqi Ma
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Dehui Li
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
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22
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Li D, Li D, Yang A, Zhang H, Lai X, Liang C. Electronic and Optical Properties of van der Waals Heterostructures Based on Two-Dimensional Perovskite (PEA) 2PbI 4 and Black Phosphorus. ACS OMEGA 2021; 6:20877-20886. [PMID: 34423195 PMCID: PMC8374907 DOI: 10.1021/acsomega.1c02264] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/30/2021] [Accepted: 07/27/2021] [Indexed: 06/13/2023]
Abstract
Combining two-dimensional (2D) perovskites with other 2D materials to form a van der Waals (vdW) heterostructure has emerged as an intriguing way of designing electronic and optoelectronic devices. The structural, electronic, and optical properties of the 2D (PEA)2PbI4/black phosphorus (BP) [PEA:(C4H9NH3)+] vdW heterostructure have been investigated using first-principles calculations. We found that the (PEA)2PbI4/BP heterostructure shows a high stability at room temperature. It is demonstrated that the (PEA)2PbI4/BP heterostructure exhibits a type-I band arrangement with high carrier mobility. Moreover, the band gap and band offset of (PEA)2PbI4/BP can be effectively modulated by an external electric field, and a transition from semiconductor to metal is observed. The band edges of (PEA)2PbI4 and BP in the (PEA)2PbI4/BP heterostructure, which show significant changes with the external electric field, provide further support. Furthermore, the BP layers can enhance the light absorption of the (PEA)2PbI4/BP heterostructures. Our results indicate that the 2D perovskite and BP vdW heterostructures are competitive candidates for the application of low-dimensional photovoltaic and optoelectronic devices.
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Affiliation(s)
- Dong Li
- Department
of Physics, Beijing Jiaotong University, Beijing 100044, China
| | - Dan Li
- Department
of Physics, Beijing Jiaotong University, Beijing 100044, China
| | - Anqi Yang
- Department
of Physics, Beijing Jiaotong University, Beijing 100044, China
| | - He Zhang
- Department
of Physics, Beijing Jiaotong University, Beijing 100044, China
| | - Xinxin Lai
- Department
of Physics, Beijing Jiaotong University, Beijing 100044, China
| | - Chunjun Liang
- Key
Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing Jiaotong University, Beijing 100044, China
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23
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Zhang X, Liu X, Li L, Ji C, Yao Y, Luo J. Great Amplification of Circular Polarization Sensitivity via Heterostructure Engineering of a Chiral Two-Dimensional Hybrid Perovskite Crystal with a Three-Dimensional MAPbI 3 Crystal. ACS CENTRAL SCIENCE 2021; 7:1261-1268. [PMID: 34345674 PMCID: PMC8323243 DOI: 10.1021/acscentsci.1c00649] [Citation(s) in RCA: 19] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/30/2021] [Indexed: 05/04/2023]
Abstract
Chiral hybrid perovskites have brought an unprecedented opportunity for circularly polarized light (CPL) detection. However, the circular polarization sensitivity of such a detector remains extremely low because of the high exciton recombination rate in those single-phase hybrid perovskites. Here, a heterostructure construction strategy is proposed to reduce the electron-hole recombination rate in a chiral hybrid perovskite and achieve CPL detectors with greatly amplified circular polarization sensitivity. A heterostructure crystal, namely, [(R)-MPA]2MAPb2I7/MAPbI3 ((R)-MPA = (R)-methylphenethylamine, MA = methylammonium), has been successfully created by integrating a chiral two-dimensional (2D) perovskite with its three-dimensional counterpart via solution-processed heteroepitaxy. Strikingly, the sharp interface of the as-grown heterostructure crystal facilitates the formation of a built-in electric field, enabling the combined concepts of charge transfer and chirality transfer, which effectively reduces the recombination probability for photogenerated carriers while retaining chiroptical activity of chiral 2D perovskite. Thereby, the resultant CPL detector exhibits significantly amplified circular polarization sensitivity at zero bias with an impressive anisotropy factor up to 0.67, which is about six times higher than that of the single-phase [(R)-MPA]2MAPb2I7 (0.1). As a proof-of-concept, the strategy we presented here enables a novel path to modulate circular polarization sensitivity and will be helpful to design chiral hybrid perovskites for advanced chiroptical devices.
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Affiliation(s)
- Xinyuan Zhang
- State
Key Laboratory of Structural Chemistry, Fujian Institute of Research
on the Structure of Matter, Chinese Academy
of Sciences, Fuzhou, Fujian 350002, China
- University
of Chinese Academy of Sciences, Beijing 100049, China
| | - Xitao Liu
- State
Key Laboratory of Structural Chemistry, Fujian Institute of Research
on the Structure of Matter, Chinese Academy
of Sciences, Fuzhou, Fujian 350002, China
- Fujian
Science & Technology Innovation Laboratory for Optoelectronic
Information of China, Fuzhou, Fujian 350108, P. R. China
| | - Lina Li
- State
Key Laboratory of Structural Chemistry, Fujian Institute of Research
on the Structure of Matter, Chinese Academy
of Sciences, Fuzhou, Fujian 350002, China
- Fujian
Science & Technology Innovation Laboratory for Optoelectronic
Information of China, Fuzhou, Fujian 350108, P. R. China
| | - Chengmin Ji
- State
Key Laboratory of Structural Chemistry, Fujian Institute of Research
on the Structure of Matter, Chinese Academy
of Sciences, Fuzhou, Fujian 350002, China
- Fujian
Science & Technology Innovation Laboratory for Optoelectronic
Information of China, Fuzhou, Fujian 350108, P. R. China
| | - Yunpeng Yao
- State
Key Laboratory of Structural Chemistry, Fujian Institute of Research
on the Structure of Matter, Chinese Academy
of Sciences, Fuzhou, Fujian 350002, China
| | - Junhua Luo
- State
Key Laboratory of Structural Chemistry, Fujian Institute of Research
on the Structure of Matter, Chinese Academy
of Sciences, Fuzhou, Fujian 350002, China
- School
of Chemistry and Chemical Engineering, Jiangxi Normal University, Nanchang 330022, China
- Fujian
Science & Technology Innovation Laboratory for Optoelectronic
Information of China, Fuzhou, Fujian 350108, P. R. China
- University
of Chinese Academy of Sciences, Beijing 100049, China
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24
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Ma J, Wang H, Li D. Recent Progress of Chiral Perovskites: Materials, Synthesis, and Properties. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2008785. [PMID: 34028888 DOI: 10.1002/adma.202008785] [Citation(s) in RCA: 79] [Impact Index Per Article: 26.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/28/2020] [Revised: 02/03/2021] [Indexed: 05/27/2023]
Abstract
Chiral materials with intrinsic inversion-symmetric structures possess many unique physicochemical features, including circular dichroism, circularly polarized photoluminescence, nonlinear optics, ferroelectricity, and spintronics. Halide perovskites have attracted considerable attention owing to their excellent optical and electrical properties, which are particularly suitable for realizing high power-conversion efficiency in solar cells. Recent studies have shown that chirality can be transferred from chiral organic ligands into halide perovskites and the resultant chiral perovskites combine the advantages of both chiral materials and halide perovskites; this provides an ideal platform to design next-generation optoelectronic and spintronic devices. In this progress report, the most recent advances are summarized in various chemical structures of chiral perovskites, their synthesis strategies, chirality generation mechanisms, and physical properties. Furthermore, the potential chiral-halide-perovskite-based applications are presented and the challenges and prospects of chiral perovskites are discussed. This report outlines the diverse construction strategies of and proposes research directions for chiral halide perovskites; thus, it provides insights into the design of novel chiral perovskites and facilitates investigation of the optoelectronic applications that employ chirality.
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Affiliation(s)
- Jiaqi Ma
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Haizhen Wang
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Dehui Li
- School of Optical and Electronic Information and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
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