1
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Hwang J, Park J, Choi J, Lee T, Lee HC, Cho K. Self-Assembly of Organic Semiconductors on Strained Graphene under Strain-Induced Pseudo-Electric Fields. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2400598. [PMID: 38477451 PMCID: PMC11109627 DOI: 10.1002/advs.202400598] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/22/2024] [Indexed: 03/14/2024]
Abstract
Graphene is used as a growth template for van der Waals epitaxy of organic semiconductor (OSC) thin films. During the synthesis and transfer of chemical-vapor-deposited graphene on a target substrate, local inhomogeneities in the graphene-in particular, a nonuniform strain field in the graphene template-can easily form, causing poor morphology and crystallinity of the OSC thin films. Moreover, a strain field in graphene introduces a pseudo-electric field in the graphene. Here, the study investigates how the strain and strain-induced pseudo-electric field of a graphene template affect the self-assembly of π-conjugated organic molecules on it. Periodically strained graphene templates are fabricated by transferring graphene onto an array of nanospheres and then analyzed the growth and nucleation behavior of C60 thin films on the strained graphene templates. Both experiments and a numerical simulation demonstrated that strained graphene reduced the desorption energy between the graphene and the C60 molecules and thereby suppressed both nucleation and growth of the C60. A mechanism is proposed in which the strain-induced pseudo-electric field in graphene modulates the binding energy of organic molecules on the graphene.
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Affiliation(s)
- Jinhyun Hwang
- Department of Chemical EngineeringPohang University of Science and TechnologyPohang37673Republic of Korea
| | - Jisang Park
- Department of Chemical EngineeringPohang University of Science and TechnologyPohang37673Republic of Korea
| | - Jinhyeok Choi
- Department of Chemical EngineeringPohang University of Science and TechnologyPohang37673Republic of Korea
| | - Taeksang Lee
- Department of Mechanical EngineeringMyongji UniversityYongin17058Republic of Korea
| | - Hyo Chan Lee
- Department of Chemical EngineeringMyongji UniversityYongin17058Republic of Korea
| | - Kilwon Cho
- Department of Chemical EngineeringPohang University of Science and TechnologyPohang37673Republic of Korea
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2
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Roy S, Yang X, Gao J. Biaxial strain tuned upconversion photoluminescence of monolayer WS 2. Sci Rep 2024; 14:3860. [PMID: 38360891 PMCID: PMC10869839 DOI: 10.1038/s41598-024-54185-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/20/2023] [Accepted: 02/09/2024] [Indexed: 02/17/2024] Open
Abstract
Monolayer tungsten disulfide (1L-WS2) is a direct bandgap atomic-layered semiconductor material with strain tunable optical and optoelectronic properties among the monolayer transition metal dichalcogenides (1L-TMDs). Here, we demonstrate biaxial strain tuned upconversion photoluminescence (UPL) from exfoliated 1L-WS2 flakes transferred on a flexible polycarbonate cruciform substrate. When the biaxial strain applied to 1L-WS2 increases from 0 to 0.51%, it is observed that the UPL peak position is redshifted by up to 60 nm/% strain, while the UPL intensity exhibits exponential growth with the upconversion energy difference varying from - 303 to - 120 meV. The measured power dependence of UPL from 1L-WS2 under biaxial strain reveals the one photon involved multiphonon-mediated upconversion mechanism. The demonstrated results provide new opportunities in advancing TMD-based optical upconversion devices for future flexible photonics and optoelectronics.
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Affiliation(s)
- Shrawan Roy
- Department of Mechanical and Aerospace Engineering, Missouri University of Science and Technology, Rolla, MO, 65409, USA
| | - Xiaodong Yang
- Department of Mechanical and Aerospace Engineering, Missouri University of Science and Technology, Rolla, MO, 65409, USA.
| | - Jie Gao
- Department of Mechanical Engineering, Stony Brook University, Stony Brook, NY, 11794, USA.
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3
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Wang J, He L, Zhang Y, Nong H, Li S, Wu Q, Tan J, Liu B. Locally Strained 2D Materials: Preparation, Properties, and Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2314145. [PMID: 38339886 DOI: 10.1002/adma.202314145] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/25/2023] [Revised: 01/28/2024] [Indexed: 02/12/2024]
Abstract
2D materials are promising for strain engineering due to their atomic thickness and exceptional mechanical properties. In particular, non-uniform and localized strain can be induced in 2D materials by generating out-of-plane deformations, resulting in novel phenomena and properties, as witnessed in recent years. Therefore, the locally strained 2D materials are of great value for both fundamental studies and practical applications. This review discusses techniques for introducing local strains to 2D materials, and their feasibility, advantages, and challenges. Then, the unique effects and properties that arise from local strain are explored. The representative applications based on locally strained 2D materials are illustrated, including memristor, single photon emitter, and photodetector. Finally, concluding remarks on the challenges and opportunities in the emerging field of locally strained 2D materials are provided.
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Affiliation(s)
- Jingwei Wang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Liqiong He
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Yunhao Zhang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Huiyu Nong
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Shengnan Li
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Qinke Wu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Junyang Tan
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
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4
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Li S, Ouyang D, Zhang N, Zhang Y, Murthy A, Li Y, Liu S, Zhai T. Substrate Engineering for Chemical Vapor Deposition Growth of Large-Scale 2D Transition Metal Dichalcogenides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211855. [PMID: 37095721 DOI: 10.1002/adma.202211855] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/18/2022] [Revised: 04/17/2023] [Indexed: 05/03/2023]
Abstract
The large-scale production of 2D transition metal dichalcogenides (TMDs) is essential to realize their industrial applications. Chemical vapor deposition (CVD) has been considered as a promising method for the controlled growth of high-quality and large-scale 2D TMDs. During a CVD process, the substrate plays a crucial role in anchoring the source materials, promoting the nucleation and stimulating the epitaxial growth. It thus significantly affects the thickness, microstructure, and crystal quality of the products, which are particularly important for obtaining 2D TMDs with expected morphology and size. Here, an insightful review is provided by focusing on the recent development associated with the substrate engineering strategies for CVD preparation of large-scale 2D TMDs. First, the interaction between 2D TMDs and substrates, a key factor for the growth of high-quality materials, is systematically discussed by combining the latest theoretical calculations. Based on this, the effect of various substrate engineering approaches on the growth of large-area 2D TMDs is summarized in detail. Finally, the opportunities and challenges of substrate engineering for the future development of 2D TMDs are discussed. This review might provide deep insight into the controllable growth of high-quality 2D TMDs toward their industrial-scale practical applications.
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Affiliation(s)
- Shaohua Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Decai Ouyang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Na Zhang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yi Zhang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Akshay Murthy
- Superconducting Quantum Materials and Systems Division, Fermi National Accelerator Laboratory (FNAL), Batavia, IL, 60510, USA
| | - Yuan Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
- Shenzhen Huazhong University of Science and Technology Research Institute, Shenzhen, 518057, P. R. China
| | - Shiyuan Liu
- State Key Laboratory of Digital Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
- Shenzhen Huazhong University of Science and Technology Research Institute, Shenzhen, 518057, P. R. China
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5
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Ling F, Ling Y, Liu X, Li L, Zhou X, Tang X, Jing C, Wang Y, Jiang S, Lu Y. Chirality dependent electromechanical properties of single-layer MoS 2 under out-of-plane deformation: a DFT study. Phys Chem Chem Phys 2023; 25:28510-28516. [PMID: 37847129 DOI: 10.1039/d3cp04032a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/18/2023]
Abstract
2D transition metal dichalcogenides (TMDs) demonstrate significant promise in logic circuits and optoelectronic devices because of their unique structures and excellent semiconductor properties. However, they inevitably undergo out-of-plane deformation during practical applications due to their ultra-thin structures. Recent experiments have shown that out-of-plane deformation significantly affects the electronic structures of 2D TMDs. However, the underlying physical mechanism is largely unknown. Therefore, it is critical to have a deeper understanding of out-of-plane deformation in 2D TMDs to optimize their applications in different fields. Currently, one of the most pressing matters that requires clarification is the chirality dependence of out-of-plane deformation in tuning the electromechanical properties of 2D TMDs. In this work, using single-layer MoS2 as a probe, we systematically investigate the effects of out-of-plane deformation along different chirality directions on the bond length, bending stiffness, electric polarization, and band structure of 2D TMDs by employing first-principles calculations based on density functional theory. Our results indicate that the bond length, bending energy, polarization strength, and band gap size of single-layer MoS2 are isotropic under out-of-plane deformation, while the band gap type is closely related to the direction of deformation. Our study will provide an essential theoretical basis for further revealing the structure-performance relationship of 2D TMDs.
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Affiliation(s)
- Faling Ling
- School of Science, Chongqing University of Posts and Telecommunications, Chongqing, 400065, P. R. China.
- Chongqing Key Laboratory of Photoelectronic Information Sensing and Transmitting Technology, School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing, 400065, P. R. China
| | - Yi Ling
- Chongqing Key Laboratory of Photoelectronic Information Sensing and Transmitting Technology, School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing, 400065, P. R. China
| | - Xiaoqing Liu
- School of Science, Chongqing University of Posts and Telecommunications, Chongqing, 400065, P. R. China.
| | - Li Li
- School of Science, Chongqing University of Posts and Telecommunications, Chongqing, 400065, P. R. China.
| | - Xianju Zhou
- School of Science, Chongqing University of Posts and Telecommunications, Chongqing, 400065, P. R. China.
| | - Xiao Tang
- School of Science, Chongqing University of Posts and Telecommunications, Chongqing, 400065, P. R. China.
| | - Chuan Jing
- School of Science, Chongqing University of Posts and Telecommunications, Chongqing, 400065, P. R. China.
| | - Yongjie Wang
- School of Science, Chongqing University of Posts and Telecommunications, Chongqing, 400065, P. R. China.
| | - Sha Jiang
- School of Science, Chongqing University of Posts and Telecommunications, Chongqing, 400065, P. R. China.
| | - Yi Lu
- Chongqing Key Laboratory of Photoelectronic Information Sensing and Transmitting Technology, School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing, 400065, P. R. China
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6
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Seravalli L, Esposito F, Bosi M, Aversa L, Trevisi G, Verucchi R, Lazzarini L, Rossi F, Fabbri F. Built-in tensile strain dependence on the lateral size of monolayer MoS 2 synthesized by liquid precursor chemical vapor deposition. NANOSCALE 2023; 15:14669-14678. [PMID: 37624579 DOI: 10.1039/d3nr01687k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/26/2023]
Abstract
Strain engineering is an efficient tool to tune and tailor the electrical and optical properties of 2D materials. The built-in strain can be tuned during the synthesis process of a two-dimensional semiconductor, such as molybdenum disulfide, by employing different growth substrates with peculiar thermal properties. In this work, we demonstrate that the built-in strain of MoS2 monolayers, grown on a SiO2/Si substrate by liquid precursor chemical vapor deposition, is mainly dependent on the size of the monolayer. In fact, we identify a critical size equal to 20 μm, from which the built-in strain increases drastically. The built-in strain is the maximum for a 60 μm sized monolayer, leading to 1.2% tensile strain with a partial release of strain close to the monolayer triangular vertexes due to the formation of nanocracks. These findings also imply that the standard method for evaluation of the number of layers based on the Raman mode separation can become unreliable for highly strained monolayers with a lateral size above 20 μm.
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Affiliation(s)
- L Seravalli
- Institute of Materials for Electronics and Magnetism (IMEM-CNR), Parco Area delle Scienze 37/a, 43124 Parma, Italy
| | - F Esposito
- Institute of Materials for Electronics and Magnetism (IMEM-CNR), Parco Area delle Scienze 37/a, 43124 Parma, Italy
- Department of Mathematical, Physical and Computer Sciences, University of Parma, Parco Area delle Scienze 7/a, 43124 Parma, Italy
| | - M Bosi
- Institute of Materials for Electronics and Magnetism (IMEM-CNR), Parco Area delle Scienze 37/a, 43124 Parma, Italy
| | - L Aversa
- Institute of Materials for Electronics and Magnetism (IMEM-CNR), FBK Trento unit, Via alla Cascata 56/C, 38123 Povo, Trento, Italy
| | - G Trevisi
- Institute of Materials for Electronics and Magnetism (IMEM-CNR), Parco Area delle Scienze 37/a, 43124 Parma, Italy
| | - R Verucchi
- Institute of Materials for Electronics and Magnetism (IMEM-CNR), FBK Trento unit, Via alla Cascata 56/C, 38123 Povo, Trento, Italy
| | - L Lazzarini
- Institute of Materials for Electronics and Magnetism (IMEM-CNR), Parco Area delle Scienze 37/a, 43124 Parma, Italy
| | - F Rossi
- Institute of Materials for Electronics and Magnetism (IMEM-CNR), Parco Area delle Scienze 37/a, 43124 Parma, Italy
| | - F Fabbri
- NEST, Istituto Nanoscienze - CNR, Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy.
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7
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Ren H, Xiang G. Strain Engineering of Intrinsic Ferromagnetism in 2D van der Waals Materials. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2378. [PMID: 37630963 PMCID: PMC10459406 DOI: 10.3390/nano13162378] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/09/2023] [Revised: 08/09/2023] [Accepted: 08/17/2023] [Indexed: 08/27/2023]
Abstract
Since the discovery of the low-temperature, long-range ferromagnetic order in monolayers Cr2Ge2Te6 and CrI3, many efforts have been made to achieve a room temperature (RT) ferromagnet. The outstanding deformation ability of two-dimensional (2D) materials provides an exciting way to mediate their intrinsic ferromagnetism (FM) with strain engineering. Here, we summarize the recent progress of strain engineering of intrinsic FM in 2D van der Waals materials. First, we introduce how to explain the strain-mediated intrinsic FM on Cr-based and Fe-based 2D van der Waals materials through ab initio Density functional theory (DFT), and how to calculate magnetic anisotropy energy (MAE) and Curie temperature (TC) from the interlayer exchange coupling J. Subsequently, we focus on numerous attempts to apply strain to 2D materials in experiments, including wrinkle-induced strain, flexible substrate bending or stretching, lattice mismatch, electrostatic force and field-cooling. Last, we emphasize that this field is still in early stages, and there are many challenges that need to be overcome. More importantly, strengthening the guideline of strain-mediated FM in 2D van der Waals materials will promote the development of spintronics and straintronics.
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Affiliation(s)
- Hongtao Ren
- School of Materials Science and Engineering, Liaocheng University, Hunan Road No. 1, Liaocheng 252000, China
| | - Gang Xiang
- College of Physics, Sichuan University, Wangjiang Road No. 29, Chengdu 610064, China
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8
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Fan P, Chen H, Zhou X, Cao L, Li G, Li M, Qian G, Xing Y, Shen C, Wang X, Jin C, Gu G, Ding H, Gao HJ. Nanoscale Manipulation of Wrinkle-Pinned Vortices in Iron-Based Superconductors. NANO LETTERS 2023; 23:4541-4547. [PMID: 37162755 DOI: 10.1021/acs.nanolett.3c00982] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
The controlled manipulation of Abrikosov vortices is essential for both fundamental science and logical applications. However, achieving nanoscale manipulation of vortices while simultaneously measuring the local density of states within them remains challenging. Here, we demonstrate the manipulation of Abrikosov vortices by moving the pinning center, namely one-dimensional wrinkles, on the terminal layers of Fe(Te,Se) and LiFeAs, by utilizing low-temperature scanning tunneling microscopy/spectroscopy (STM/S). The wrinkles trap the Abrikosov vortices induced by the external magnetic field. In some of the wrinkle-pinned vortices, robust zero-bias conductance peaks are observed. We tailor the wrinkle into short pieces and manipulate the wrinkles by using an STM tip. Strikingly, we demonstrate that the pinned vortices move together with these wrinkles even at high magnetic field up to 6 T. Our results provide a universal and effective routine for manipulating wrinkle-pinned vortices and simultaneously measuring the local density of states on the iron-based superconductor surfaces.
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Affiliation(s)
- Peng Fan
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Physical Sciences, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Hui Chen
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Physical Sciences, Chinese Academy of Sciences, Beijing 100190, P. R. China
- Hefei National Laboratory, Hefei, Anhui 230088, P. R. China
| | - Xingtai Zhou
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Physical Sciences, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Lu Cao
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Physical Sciences, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Geng Li
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Physical Sciences, Chinese Academy of Sciences, Beijing 100190, P. R. China
- Hefei National Laboratory, Hefei, Anhui 230088, P. R. China
| | - Meng Li
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Physical Sciences, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Guojian Qian
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Physical Sciences, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Yuqing Xing
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Physical Sciences, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Chengmin Shen
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Physical Sciences, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Xiancheng Wang
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Physical Sciences, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Changqing Jin
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Physical Sciences, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Genda Gu
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Hong Ding
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Hong-Jun Gao
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
- School of Physical Sciences, Chinese Academy of Sciences, Beijing 100190, P. R. China
- Hefei National Laboratory, Hefei, Anhui 230088, P. R. China
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9
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Xing F, Ji G, Li Z, Zhong W, Wang F, Liu Z, Xin W, Tian J. Preparation, properties and applications of two-dimensional superlattices. MATERIALS HORIZONS 2023; 10:722-744. [PMID: 36562255 DOI: 10.1039/d2mh01206e] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
As a combination concept of a 2D material and a superlattice, two-dimensional superlattices (2DSs) have attracted increasing attention recently. The natural advantages of 2D materials in their properties, dimension, diversity and compatibility, and their gradually improved technologies for preparation and device fabrication serve as solid foundations for the development of 2DSs. Compared with the existing 2D materials and even their heterostructures, 2DSs relate to more materials and elaborate architectures, leading to novel systems with more degrees of freedom to modulate material properties at the nanoscale. Here, three typical types of 2DSs, including the component, strain-induced and moiré superlattices, are reviewed. The preparation methods, properties and state-of-the-art applications of each type are summarized. An outlook of the challenges and future developments is also presented. We hope that this work can provide a reference for the development of 2DS-related research.
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Affiliation(s)
- Fei Xing
- School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo, 255049, China
| | - Guangmin Ji
- School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo, 255049, China
| | - Zongwen Li
- School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo, 255049, China
| | - Weiheng Zhong
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, China.
| | - Feiyue Wang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China
| | - Zhibo Liu
- Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Teda Applied Physics Institute and School of Physics, Nankai University, Tianjin, 300071, China.
| | - Wei Xin
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, China.
| | - Jianguo Tian
- Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Teda Applied Physics Institute and School of Physics, Nankai University, Tianjin, 300071, China.
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10
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Mao X, Qin Z, Ge S, Rong C, Zhang B, Xuan F. Strain engineering of electrocatalysts for hydrogen evolution reaction. MATERIALS HORIZONS 2023; 10:340-360. [PMID: 36541087 DOI: 10.1039/d2mh01171a] [Citation(s) in RCA: 12] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
As the key half reaction of water-splitting electrolysis, the hydrogen evolution reaction (HER) that occurs at the cathode directly determines the overall efficiency of hydrogen production. To improve the efficiency of electrochemical water splitting for hydrogen generation, efficient and robust catalysts need to be developed. Strain engineering, which represents an effective and promising category of strategies, can regulate the electronic structures of catalysts by modulating the lattice strain and ultimately optimizing the HER dynamics. This work critically reviews the recent progress of strain engineering in HER and provides future perspectives for this area. The methods and characterization techniques are also introduced in detail. Hopefully this review can provide guidelines for the design and manufacturing of advanced catalysts for HER and other heterogeneous catalysis reactions such as chemical sensing, CO2 reduction and NH3 synthesis.
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Affiliation(s)
- Xinyuan Mao
- Shanghai Key Laboratory of Intelligent Sensing and Detection Technology, East China University of Science and Technology, Shanghai 200237, P. R. China.
- Key Laboratory of Pressure Systems and Safety of Ministry of Education, East China University of Science and Technology, Shanghai 200237, P. R. China
- School of Mechanical and Power Engineering, East China University of Science and Technology, Shanghai 200237, P. R. China
| | - Zhuhui Qin
- Shanghai Key Laboratory of Intelligent Sensing and Detection Technology, East China University of Science and Technology, Shanghai 200237, P. R. China.
- Key Laboratory of Pressure Systems and Safety of Ministry of Education, East China University of Science and Technology, Shanghai 200237, P. R. China
- School of Mechanical and Power Engineering, East China University of Science and Technology, Shanghai 200237, P. R. China
| | - Shundong Ge
- Shanghai Key Laboratory of Intelligent Sensing and Detection Technology, East China University of Science and Technology, Shanghai 200237, P. R. China.
- Key Laboratory of Pressure Systems and Safety of Ministry of Education, East China University of Science and Technology, Shanghai 200237, P. R. China
- School of Mechanical and Power Engineering, East China University of Science and Technology, Shanghai 200237, P. R. China
| | - Chao Rong
- Shanghai Key Laboratory of Intelligent Sensing and Detection Technology, East China University of Science and Technology, Shanghai 200237, P. R. China.
- Key Laboratory of Pressure Systems and Safety of Ministry of Education, East China University of Science and Technology, Shanghai 200237, P. R. China
- School of Mechanical and Power Engineering, East China University of Science and Technology, Shanghai 200237, P. R. China
| | - Bowei Zhang
- Shanghai Key Laboratory of Intelligent Sensing and Detection Technology, East China University of Science and Technology, Shanghai 200237, P. R. China.
- Key Laboratory of Pressure Systems and Safety of Ministry of Education, East China University of Science and Technology, Shanghai 200237, P. R. China
- School of Mechanical and Power Engineering, East China University of Science and Technology, Shanghai 200237, P. R. China
| | - Fuzhen Xuan
- Shanghai Key Laboratory of Intelligent Sensing and Detection Technology, East China University of Science and Technology, Shanghai 200237, P. R. China.
- Key Laboratory of Pressure Systems and Safety of Ministry of Education, East China University of Science and Technology, Shanghai 200237, P. R. China
- School of Mechanical and Power Engineering, East China University of Science and Technology, Shanghai 200237, P. R. China
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11
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Wang Q, Wang S, Li J, Gan Y, Jin M, Shi R, Amini A, Wang N, Cheng C. Modified Spatially Confined Strategy Enabled Mild Growth Kinetics for Facile Growth Management of Atomically-Thin Tungsten Disulfides. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2205638. [PMID: 36446619 PMCID: PMC9875684 DOI: 10.1002/advs.202205638] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/28/2022] [Revised: 10/28/2022] [Indexed: 06/16/2023]
Abstract
Chemical vapor deposition (CVD) has been widely used to produce high quality 2D transitional metal dichalcogenides (2D TMDCs). However, violent evaporation and large diffusivity discrepancy of metal and chalcogen precursors at elevated temperatures often result in poor regulation on X:M molar ratio (M = Mo, W etc.; X = S, Se, and Te), and thus it is rather challenging to achieve the desired products of 2D TMDCs. Here, a modified spatially confined strategy (MSCS) is utilized to suppress the rising S vapor concentration between two aspectant substrates, upon which the lateral/vertical growth of 2D WS2 can be selectively regulated via proper S:W zones correspond to greatly broadened time/growth windows. An S:W-time (SW-T) growth diagram was thus proposed as a mapping guide for the general understanding of CVD growth of 2D WS2 and the design of growth routes for the desired 2D WS2 . Consequently, a comprehensive growth management of atomically thin WS2 is achieved, including the versatile controls of domain size, layer number, and lateral/vertical heterostructures (MoS2 -WS2 ). The lateral heterostructures show an enhanced hydrogen evolution reaction performance. This study advances the substantial understanding to the growth kinetics and provides an effective MSCS protocol for growth design and management of 2D TMDCs.
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Affiliation(s)
- Qun Wang
- Department of Materials Science and EngineeringSouthern University of Science and TechnologyShenzhen518055P. R. China
| | - Shi Wang
- Department of Physics and Center for Quantum MaterialsHong Kong University of Science and TechnologyHong KongP. R. China
| | - Jingyi Li
- Department of Materials Science and EngineeringSouthern University of Science and TechnologyShenzhen518055P. R. China
| | - Yichen Gan
- Department of Materials Science and EngineeringSouthern University of Science and TechnologyShenzhen518055P. R. China
| | - Mengtian Jin
- Department of Materials Science and EngineeringSouthern University of Science and TechnologyShenzhen518055P. R. China
| | - Run Shi
- Department of Materials Science and EngineeringSouthern University of Science and TechnologyShenzhen518055P. R. China
| | - Abbas Amini
- Center for Infrastructure EngineeringWestern Sydney UniversityKingswoodNew South Wales2751Australia
| | - Ning Wang
- Department of Physics and Center for Quantum MaterialsHong Kong University of Science and TechnologyHong KongP. R. China
| | - Chun Cheng
- Department of Materials Science and EngineeringSouthern University of Science and TechnologyShenzhen518055P. R. China
- Guangdong Provincial Key Laboratory of Energy Materials for Electric PowerSouthern University of Science and TechnologyShenzhen518055China
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12
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Liu S, Wang J, Shao J, Ouyang D, Zhang W, Liu S, Li Y, Zhai T. Nanopatterning Technologies of 2D Materials for Integrated Electronic and Optoelectronic Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2200734. [PMID: 35501143 DOI: 10.1002/adma.202200734] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/23/2022] [Revised: 04/12/2022] [Indexed: 06/14/2023]
Abstract
With the reduction of feature size and increase of integration density, traditional 3D semiconductors are unable to meet the future requirements of chip integration. The current semiconductor fabrication technologies are approaching their physical limits based on Moore's law. 2D materials such as graphene, transitional metal dichalcogenides, etc., are of great promise for future memory, logic, and photonic devices due to their unique and excellent properties. To prompt 2D materials and devices from the laboratory research stage to the industrial integrated circuit-level, it is necessary to develop advanced nanopatterning methods to obtain high-quality, wafer-scale, and patterned 2D products. Herein, the recent development of nanopatterning technologies, particularly toward realizing large-scale practical application of 2D materials is reviewed. Based on the technological progress, the unique requirement and advances of the 2D integration process for logic, memory, and optoelectronic devices are further summarized. Finally, the opportunities and challenges of nanopatterning technologies of 2D materials for future integrated chip devices are prospected.
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Affiliation(s)
- Shenghong Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Jing Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Jiefan Shao
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Decai Ouyang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Wenjing Zhang
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Shiyuan Liu
- State Key Laboratory of Digital Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yuan Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
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13
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Chen Y, Wang Y, Shen W, Wu M, Li B, Zhang Q, Liu S, Hu C, Yang S, Gao Y, Jiang C. Strain and Interference Synergistically Modulated Optical and Electrical Properties in ReS 2/Graphene Heterojunction Bubbles. ACS NANO 2022; 16:16271-16280. [PMID: 36205574 DOI: 10.1021/acsnano.2c05272] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Two-dimensional (2D) material bubbles, as a straightforward method to induce strain, represent a potentially powerful platform for the modulation of different properties of 2D materials and the exploration of their strain-related applications. Here, we prepare ReS2/graphene heterojunction bubbles (ReS2/gr heterobubbles) and investigate their strain and interference synergistically modulated optical and electrical properties. We perform Raman and photoluminescence (PL) spectra to verify the continuously varying strain and the microcavity induced optical interference in ReS2/gr heterobubbles. Kelvin probe force microscopy (KPFM) is carried out to explore the photogenerated carrier transfer behavior in both strained ReS2/gr heterobubbles and ReS2/gr interfaces, as well as the oscillation of surface potential caused by optical interference under illumination conditions. Moreover, the switching of in-plane crystal orientation and the modulation of optical anisotropy of ReS2/gr heterobubbles are observed by azimuth-dependent reflectance difference microscopy (ADRDM), which can be attributed to the action of both strain effect and interference. Our study proves that the optical and electrical properties can be effectively modulated by the synergistical effect of strain and interference in a 2D material bubble.
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Affiliation(s)
- Yujia Chen
- School of Materials Science and Engineering, Beihang University, Beijing100191, P. R. China
| | - Yunkun Wang
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing100871, China
| | - Wanfu Shen
- State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Weijin Road, CN300072, Tianjin, P. R. China
| | - Minghui Wu
- College of Materials and Chemical Engineering, Minjiang University, Fuzhou350108, P. R. China
| | - Bin Li
- State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Weijin Road, CN300072, Tianjin, P. R. China
| | - Qu Zhang
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing100871, China
| | - Shuai Liu
- School of Materials Science and Engineering, Beihang University, Beijing100191, P. R. China
| | - Chunguang Hu
- State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Weijin Road, CN300072, Tianjin, P. R. China
| | - Shengxue Yang
- School of Materials Science and Engineering, Beihang University, Beijing100191, P. R. China
| | - Yunan Gao
- State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing100871, China
| | - Chengbao Jiang
- School of Materials Science and Engineering, Beihang University, Beijing100191, P. R. China
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14
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Avilés MO, Jelken J, Lagugné-Labarthet F. Periodic Spiral Ripples on VS 2 Flakes: A Tip-Enhanced Raman Investigation. J Phys Chem Lett 2022; 13:9771-9776. [PMID: 36226836 DOI: 10.1021/acs.jpclett.2c02555] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Using atmospheric-pressure chemical vapor deposition, we have synthesized vanadium disulfide (VS2) flakes with a metallic 1T phase that display nanoscale spiral surface ripples. To understand the origin of these chiral patterns in these transition metal dichalcogenides, tip-enhanced Raman spectroscopy and Kelvin probe force microscopies were jointly used to investigate their crystal structure, possible oxidation, and electronic properties, respectively. We found that the surface corrugation consists of small crystalline domains with distinct orientations. The change in local orientation is observed concomitantly with a spectral shift of the lattice modes of VS2 and results in the formation of grain boundaries between the domains with distinct orientation. Additionally, the periodic surface structure is modulating the work function of VS2 by 14 meV.
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Affiliation(s)
- María Olivia Avilés
- The Center for Advanced Materials and Biomaterials (CAMBR), Department of Chemistry, The University of Western Ontario (Western University), London, OntarioN6A 5B7, Canada
| | - Joachim Jelken
- The Center for Advanced Materials and Biomaterials (CAMBR), Department of Chemistry, The University of Western Ontario (Western University), London, OntarioN6A 5B7, Canada
| | - François Lagugné-Labarthet
- The Center for Advanced Materials and Biomaterials (CAMBR), Department of Chemistry, The University of Western Ontario (Western University), London, OntarioN6A 5B7, Canada
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15
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Rahman S, Yildirim T, Tebyetekerwa M, Khan AR, Lu Y. Extraordinary Nonlinear Optical Interaction from Strained Nanostructures in van der Waals CuInP 2S 6. ACS NANO 2022; 16:13959-13968. [PMID: 35980379 DOI: 10.1021/acsnano.2c03294] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Local strain engineering and structural modification of 2D materials furnish benevolent control over their optoelectronic properties and provide an exciting approach to tune light-matter interaction in layered materials. Application of strain at the nanoscale is typically obtained through permanently deformed nanostructures such as nanowrinkles, which yield large band gap modulation, photoluminescence enhancement, and surface potential. Ultrathin transition metal dichalcogenides (TMDs) have been greatly analyzed for such purposes. Herein, we extend strain-induced nanoengineering to an emerging 2D material, CuInP2S6 (CIPS), and visualize extraordinary control over nonlinear light-matter interaction. Wrinkle nanostructures exhibit ∼160-fold enhancement in second harmonic generation (SHG) compared to unstrained regions, which is additionally influenced by a change in the dielectric environment. The SHG enhancement was significantly modulated by the percentage of applied strain which was numerically estimated. Furthermore, polarization-dependent SHG revealed quenching and enhancement in the parallel and perpendicular directions, respectively, due to the direction of the compressive vector. Our work provides an important advancement in controlling optoelectronic properties beyond TMDs for imminent applications in flexible electronics.
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Affiliation(s)
- Sharidya Rahman
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Tanju Yildirim
- Center for Functional Sensor and Actuator, Research Center for Functional Materials, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Mike Tebyetekerwa
- Dow Centre for Sustainable Engineering Innovation, School of Chemical Engineering, University of Queensland, St Lucia, Queensland 4072, Australia
| | - Ahmed Raza Khan
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Yuerui Lu
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Centre for Quantum Computation and Communication Technology, School of Engineering, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
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16
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Wang E, Chen Z, Shi R, Xiong Z, Xin Z, Wang B, Guo J, Peng R, Wu Y, Li C, Ren H, Li X, Liu K. Humidity-Controlled Dynamic Engineering of Buckling Dimensionality in MoS 2 Thin Films. ACS NANO 2022; 16:14157-14167. [PMID: 36053054 DOI: 10.1021/acsnano.2c04203] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Dynamic engineering of buckling deformation is of vital importance as it provides multiphase modulation of thin film devices. In particular, dynamic switch of buckles between one-dimensional (1D) and two-dimensional (2D) configurations in a single film system on rigid substrates is intriguing but very challenging. The current approach to changing buckling configuration is mainly achieved by varying the built-in stress at the film-substrate interface, but it is difficult to realize dynamic engineering on rigid substrates. Herein, we report a dynamic engineering of buckling deformation in MoS2 thin films by humidity-tuned interfacial adhesion. With the change of humidity, the MoS2 thin films deform from 1D telephone-cord buckles to 2D web-like buckles due to the hydrophilic nature of both MoS2 and substrate. Such 1D-to-2D evolution of buckles is attributed to the weakened interfacial adhesion of mixed deformation modes induced by humidity, which is verified by finite-element modeling. These buckled films further find potential applications as patterned templates for liquid condensation and sensing units for tactile sensors. Our work not only demonstrates the humidity-controlled dimensionality engineering of buckles in MoS2 thin films but also sheds light on the functional applications of buckled films based on their profile features.
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Affiliation(s)
- Enze Wang
- State Key Laboratory of New Ceramics and Fine Processing & Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Zekun Chen
- Center for Advanced Mechanics and Materials, Applied Mechanics Laboratory, Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China
| | - Run Shi
- State Key Laboratory of New Ceramics and Fine Processing & Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Zixin Xiong
- Center for Advanced Mechanics and Materials, Applied Mechanics Laboratory, Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China
| | - Zeqin Xin
- State Key Laboratory of New Ceramics and Fine Processing & Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Bolun Wang
- State Key Laboratory of New Ceramics and Fine Processing & Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Jing Guo
- State Key Laboratory of New Ceramics and Fine Processing & Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Ruixuan Peng
- State Key Laboratory of New Ceramics and Fine Processing & Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Yonghuang Wu
- State Key Laboratory of New Ceramics and Fine Processing & Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Chenyu Li
- State Key Laboratory of New Ceramics and Fine Processing & Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Hongtao Ren
- School of Materials Science and Engineering, Liaocheng University, Hunan Road No. 1, Liaocheng 252000, China
| | - Xiaoyan Li
- Center for Advanced Mechanics and Materials, Applied Mechanics Laboratory, Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China
| | - Kai Liu
- State Key Laboratory of New Ceramics and Fine Processing & Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
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17
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Rahman S, Lu Y. Nano-engineering and nano-manufacturing in 2D materials: marvels of nanotechnology. NANOSCALE HORIZONS 2022; 7:849-872. [PMID: 35758316 DOI: 10.1039/d2nh00226d] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional materials have attracted significant interest and investigation since the marvellous discovery of graphene. Due to their unique physical, mechanical and optical properties, van der Waals (vdW) materials possess extraordinary potential for application in future optoelectronics devices. Nano-engineering and nano-manufacturing in the atomically thin regime has further opened multifarious avenues to explore novel physical properties. Among them, moiré heterostructures, strain engineering and substrate manipulation have created numerous exotic and topological phenomena such as unconventional superconductivity, orbital magnetism, flexible nanoelectronics and highly efficient photovoltaics. This review comprehensively summarizes the three most influential techniques of nano-engineering in 2D materials. The latest development in the marvels of moiré structures in vdW materials is discussed; in addition, topological structures in layered materials and substrate engineering on the nanoscale are thoroughly scrutinized to highlight their significance in micro- and nano-devices. Finally, we conclude with remarks on challenges and possible future directions in the rapidly expanding field of nanotechnology and nanomaterial.
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Affiliation(s)
- Sharidya Rahman
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, ACT 2601, Australia.
| | - Yuerui Lu
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, ACT 2601, Australia.
- ARC Centre for Quantum Computation and Communication Technology, Department of Quantum Science, School of Engineering, The Australian National University, Acton, ACT 2601, Australia.
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18
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Strain-Modulated Magnetism in MoS2. NANOMATERIALS 2022; 12:nano12111929. [PMID: 35683784 PMCID: PMC9182138 DOI: 10.3390/nano12111929] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/22/2022] [Revised: 05/26/2022] [Accepted: 06/01/2022] [Indexed: 11/16/2022]
Abstract
Since the experiments found that two-dimensional (2D) materials such as single-layer MoS2 can withstand up to 20% strain, strain-modulated magnetism has gradually become an emerging research field. However, applying strain alone is difficult to modulate the magnetism of single-layer pristine MoS2, but applying strain combined with other tuning techniques such as introducing defects makes it easier to produce and alter the magnetism in MoS2. Here, we summarize the recent progress of strain-dependent magnetism in MoS2. First, we review the progress in theoretical study. Then, we compare the experimental methods of applying strain and their effects on magnetism. Specifically, we emphasize the roles played by web buckles, which induce biaxial tensile strain conveniently. Despite some progress, the study of strain-dependent MoS2 magnetism is still in its infancy, and a few potential directions for future research are discussed at the end. Overall, a broad and in-depth understanding of strain-tunable magnetism is very necessary, which will further drive the development of spintronics, straintronics, and flexible electronics.
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