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Wang H, Zhu X, Zhao Z, Wang X, Qian Z, Jiao L, Wang K, Li Y, Qi JJ, Asif M, Zheng Q, Xie L. In Situ Imaging of Two-Dimensional Crystal Growth Using a Heat-Resistant Optical Microscope. NANO LETTERS 2024; 24:5498-5505. [PMID: 38619556 DOI: 10.1021/acs.nanolett.4c00620] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/16/2024]
Abstract
Revealing low-dimensional material growth dynamics is critical for crystal growth engineering. However, in a practical high-temperature growth system, the crystal growth process is a black box because of the lack of heat-resistant imaging tools. Here, we develop a heat-resistant optical microscope and embed it in a chemical vapor deposition (CVD) system to investigate two-dimensional (2D) crystal growth dynamics. This in situ optical imaging CVD system can tolerate temperatures of ≤900 °C with a spatial resolution of ∼1 μm. The growth of monolayer MoS2 crystals was studied as a model for 2D crystal growth. The nucleation and growth process have been imaged. Model analysis and simulation have revealed the growth rate, diffusion coefficient, and spatial distribution of the precursor. More importantly, a new vertex-kink-ledge model has been suggested for monolayer crystal growth. This work provides a new technique for in situ microscopic imaging at high temperatures and fundamental insight into 2D crystal growth.
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Affiliation(s)
- Honggang Wang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- Department of Chemistry, Tsinghua University, Beijing 100084, China
| | - Xiaokai Zhu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhaoyang Zhao
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xinsheng Wang
- Institute of Biomedical Engineering, College of Life Sciences, Qingdao University, Qingdao 266071, China
| | - Ziyue Qian
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- Department of Chemistry, Tsinghua University, Beijing 100084, China
| | - Liying Jiao
- Department of Chemistry, Tsinghua University, Beijing 100084, China
| | - Kangkang Wang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - You Li
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Jun-Jie Qi
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Muhammad Asif
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Qiang Zheng
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Liming Xie
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
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2
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Dziobek-Garrett R, Hilliard S, Sriramineni S, Ambrozaite O, Zhu Y, Hudak BM, Brintlinger TH, Chowdhury T, Kempa TJ. Controlling Morphology and Excitonic Disorder in Monolayer WSe 2 Grown by Salt-Assisted CVD Methods. ACS NANOSCIENCE AU 2023; 3:441-450. [PMID: 38144700 PMCID: PMC10740127 DOI: 10.1021/acsnanoscienceau.3c00028] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/19/2023] [Revised: 08/08/2023] [Accepted: 08/08/2023] [Indexed: 12/26/2023]
Abstract
Chemical synthesis is a compelling alternative to top-down fabrication for controlling the size, shape, and composition of two-dimensional (2D) crystals. Precision tuning of the 2D crystal structure has broad implications for the discovery of new phenomena and the reliable implementation of these materials in optoelectronic, photovoltaic, and quantum devices. However, precise and predictable manipulation of the edge structure in 2D crystals through gas-phase synthesis is still a formidable challenge. Here, we demonstrate a salt-assisted low-pressure chemical vapor deposition method that enables tuning W metal flux during growth of 2D WSe2 monolayers and, thereby, direct control of their edge structure and optical properties. The degree of structural disorder in 2D WSe2 is a direct function of the W metal flux, which is controlled by adjusting the mass ratio of WO3 to NaCl. This edge disorder then couples to excitonic disorder, which manifests as broadened and spatially varying emission profiles. Our work links synthetic parameters with analyses of material morphology and optical properties to provide a unified understanding of intrinsic limits and opportunities in synthetic 2D materials.
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Affiliation(s)
- Reynolds Dziobek-Garrett
- Department
of Chemistry, Johns Hopkins University, Baltimore, Maryland 21218, United States
of America
| | - Sachi Hilliard
- Department
of Chemistry, Johns Hopkins University, Baltimore, Maryland 21218, United States
of America
| | - Shreya Sriramineni
- Department
of Chemistry, Johns Hopkins University, Baltimore, Maryland 21218, United States
of America
| | - Ona Ambrozaite
- Department
of Chemistry, Johns Hopkins University, Baltimore, Maryland 21218, United States
of America
| | - Yifei Zhu
- Department
of Chemistry, Johns Hopkins University, Baltimore, Maryland 21218, United States
of America
| | - Bethany M. Hudak
- Materials
Science & Technology Division, U.S.
Naval Research Laboratory, Washington, D.C. 20375, United States of America
| | - Todd H. Brintlinger
- Materials
Science & Technology Division, U.S.
Naval Research Laboratory, Washington, D.C. 20375, United States of America
| | - Tomojit Chowdhury
- Department
of Chemistry and Chicago Materials Research Center, University of Chicago, Chicago, Illinois 60637, United States of America
| | - Thomas J. Kempa
- Department
of Chemistry, Johns Hopkins University, Baltimore, Maryland 21218, United States
of America
- Department
of Materials Science and Engineering, Johns
Hopkins University, Baltimore, Maryland 21218, United States of America
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3
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Materials Horizons Emerging Investigator Series: Professor Derek Ho, City University of Hong Kong, China. MATERIALS HORIZONS 2023; 10:2723-2725. [PMID: 37458411 DOI: 10.1039/d3mh90034g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/01/2023]
Abstract
Our Emerging Investigator Series features exceptional work by early-career researchers working in the field of materials science.
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4
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Yang P, Liu F, Li X, Hu J, Zhou F, Zhu L, Chen Q, Gao P, Zhang Y. Highly Reproducible Epitaxial Growth of Wafer-Scale Single-Crystal Monolayer MoS 2 on Sapphire. SMALL METHODS 2023:e2300165. [PMID: 37035951 DOI: 10.1002/smtd.202300165] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/11/2023] [Revised: 03/13/2023] [Indexed: 06/19/2023]
Abstract
2D semiconducting transition-metal dichalcogenides (TMDs) have attracted considerable attention as channel materials for next-generation transistors. To meet the industry needs, large-scale production of single-crystal monolayer TMDs in highly reproducible and energy-efficient manner is critically significant. Herein, it is reported that the high-reproducible, high-efficient epitaxial growth of wafer-scale monolayer MoS2 single crystals on the industry-compatible sapphire substrates, by virtue of a deliberately designed "face-to-face" metal-foil-based precursor supply route, carbon-cloth-filter based precursor concentration decay strategy, and the precise optimization of the chalcogenides and metal precursor ratio (i.e., S/Mo ratio). This unique growth design can concurrently guarantee the uniform release, short-distance transport, and moderate deposition of metal precursor on a wafer-scale substrate, affording high-efficient and high-reproducible growth of wafer-scale single crystals (over two inches, six times faster than usual). Moreover, the S/Mo precursor ratio is found as a key factor for the epitaxial growth of MoS2 single crystals with rather high crystal quality, as convinced by the relatively high electronic performances of related devices. This work demonstrates a reliable route for the batch production of wafer-scale single-crystal 2D materials, thus propelling their practical applications in highly integrated high-performance nanoelectronics and optoelectronics.
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Affiliation(s)
- Pengfei Yang
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
- Center for Nanochemistry, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Fachen Liu
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Xuan Li
- Center for Nanochemistry, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing, 100871, P. R. China
| | - Jingyi Hu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
- Center for Nanochemistry, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Fan Zhou
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
- Center for Nanochemistry, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Lijie Zhu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Qing Chen
- Center for Nanochemistry, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing, 100871, P. R. China
| | - Peng Gao
- Electron Microscopy Laboratory, and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, P. R. China
| | - Yanfeng Zhang
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
- Center for Nanochemistry, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
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Yu T, Shen R, Wu Z, Du C, Shen X, Jia N, Deng H, Zhao Y, Zhang L, Feng Y, Zhang Z, Luo Y, Zhou F, Wang D. Monolayer NbSe 2 Favors Ultralow Friction and Super Wear Resistance. NANO LETTERS 2023; 23:1865-1871. [PMID: 36790333 DOI: 10.1021/acs.nanolett.2c04811] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The urgent demand for atomically thin, superlubricating, and super wear-resistant materials in micro/nanoelectromechanical systems has stimulated the research of friction-reducing and antiwear materials. However, the fabrication of subnanometer-thick films with superlubricating and super wear-resistant properties under ambient conditions remains a huge challenge. Herein, high-quality monolayer (ML) NbSe2 (∼0.8 nm) with ultralow friction and super wear resistance in an atmospheric environment was successfully grown by chemical vapor deposition (CVD) for the first time. Moreover, compared with few-layered (FL) NbSe2, ML NbSe2 has a lower friction coefficient and better wear resistance. On the basis of density function theory (DFT) calculations, the adhesion and the degree of charge transfer between ML NbSe2 and the substrate is larger than that of the topmost layer to the underlying layers of NbSe2 with two or more layers, which can be used to explain that the ML NbSe2 favors ultralow friction and super wear resistance.
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Affiliation(s)
- Tongtong Yu
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China
- Qingdao Center of Resource Chemistry and New Materials, Qingdao 266100, China
| | - Ruilin Shen
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China
- School of Materials Science and Physics, China University of Mining and Technology, Xuzhou 221116, China
| | - Zishuai Wu
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China
- State Key Laboratory of Mechanical System and Vibration, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Changhe Du
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiaojun Shen
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore
| | - Ning Jia
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore
| | - Haoyu Deng
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yongkang Zhao
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China
- Qingdao Center of Resource Chemistry and New Materials, Qingdao 266100, China
| | - Liqiang Zhang
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China
- Qingdao Center of Resource Chemistry and New Materials, Qingdao 266100, China
| | - Yange Feng
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China
- Qingdao Center of Resource Chemistry and New Materials, Qingdao 266100, China
| | - Zhinan Zhang
- State Key Laboratory of Mechanical System and Vibration, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Yong Luo
- School of Materials Science and Physics, China University of Mining and Technology, Xuzhou 221116, China
| | - Feng Zhou
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China
| | - Daoai Wang
- State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Qingdao Center of Resource Chemistry and New Materials, Qingdao 266100, China
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6
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Ye Z, Tan C, Huang X, Ouyang Y, Yang L, Wang Z, Dong M. Emerging MoS 2 Wafer-Scale Technique for Integrated Circuits. NANO-MICRO LETTERS 2023; 15:38. [PMID: 36652150 PMCID: PMC9849648 DOI: 10.1007/s40820-022-01010-4] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/25/2022] [Accepted: 12/14/2022] [Indexed: 06/17/2023]
Abstract
As an outstanding representative of layered materials, molybdenum disulfide (MoS2) has excellent physical properties, such as high carrier mobility, stability, and abundance on earth. Moreover, its reasonable band gap and microelectronic compatible fabrication characteristics makes it the most promising candidate in future advanced integrated circuits such as logical electronics, flexible electronics, and focal-plane photodetector. However, to realize the all-aspects application of MoS2, the research on obtaining high-quality and large-area films need to be continuously explored to promote its industrialization. Although the MoS2 grain size has already improved from several micrometers to sub-millimeters, the high-quality growth of wafer-scale MoS2 is still of great challenge. Herein, this review mainly focuses on the evolution of MoS2 by including chemical vapor deposition, metal-organic chemical vapor deposition, physical vapor deposition, and thermal conversion technology methods. The state-of-the-art research on the growth and optimization mechanism, including nucleation, orientation, grain, and defect engineering, is systematically summarized. Then, this review summarizes the wafer-scale application of MoS2 in a transistor, inverter, electronics, and photodetectors. Finally, the current challenges and future perspectives are outlined for the wafer-scale growth and application of MoS2.
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Affiliation(s)
- Zimeng Ye
- College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, People's Republic of China
| | - Chao Tan
- College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, People's Republic of China
| | - Xiaolei Huang
- State Key Laboratory of Solidification Processing, Center of Advanced Lubrication and Seal Materials, Northwestern Polytechnical University, Xi'an, 710072, People's Republic of China
| | - Yi Ouyang
- Interdisciplinary Nanoscience Center, Aarhus University, 8000, Aarhus C, Denmark
| | - Lei Yang
- College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, People's Republic of China
| | - Zegao Wang
- College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, People's Republic of China.
| | - Mingdong Dong
- Interdisciplinary Nanoscience Center, Aarhus University, 8000, Aarhus C, Denmark.
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7
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Ren H, Xiang G. Recent Progress in Research on Ferromagnetic Rhenium Disulfide. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3451. [PMID: 36234579 PMCID: PMC9565357 DOI: 10.3390/nano12193451] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/07/2022] [Revised: 09/26/2022] [Accepted: 09/29/2022] [Indexed: 06/16/2023]
Abstract
Since long-range magnetic ordering was observed in pristine Cr2Ge2Te6 and monolayer CrCl3, two-dimensional (2D) magnetic materials have gradually become an emerging field of interest. However, it is challenging to induce and modulate magnetism in non-magnetic (NM) materials such as rhenium disulfide (ReS2). Theoretical research shows that defects, doping, strain, particular phase, and domain engineering may facilitate the creation of magnetic ordering in the ReS2 system. These predictions have, to a large extent, stimulated experimental efforts in the field. Herein, we summarize the recent progress on ferromagnetism (FM) in ReS2. We compare the proposed methods to introduce and modulate magnetism in ReS2, some of which have made great experimental breakthroughs. Experimentally, only a few ReS2 materials exhibit room-temperature long-range ferromagnetic order. In addition, the superexchange interaction may cause weak ferromagnetic coupling between neighboring trimers. We also present a few potential research directions for the future, and we finally conclude that a deep and thorough understanding of the origin of FM with and without strain is very important for the development of basic research and practical applications.
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Affiliation(s)
- Hongtao Ren
- School of Materials Science and Engineering, Liaocheng University, Hunan Road No. 1, Liaocheng 252000, China
| | - Gang Xiang
- College of Physics, Sichuan University, Wangjiang Road No. 29, Chengdu 610064, China
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Ji Q, Su C, Mao N, Tian X, Idrobo JC, Miao J, Tisdale WA, Zettl A, Li J, Kong J. Revealing the Brønsted-Evans-Polanyi relation in halide-activated fast MoS 2 growth toward millimeter-sized 2D crystals. SCIENCE ADVANCES 2021; 7:eabj3274. [PMID: 34705498 PMCID: PMC8550239 DOI: 10.1126/sciadv.abj3274] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/05/2021] [Accepted: 09/08/2021] [Indexed: 06/13/2023]
Abstract
Achieving large-size two-dimensional (2D) crystals is key to fully exploiting their remarkable functionalities and application potentials. Chemical vapor deposition growth of 2D semiconductors such as monolayer MoS2 has been reported to be activated by halide salts, for which various investigations have been conducted to understand the underlying mechanism from different aspects. Here, we provide experimental evidence showing that the MoS2 growth dynamics are halogen dependent through the Brønsted-Evans-Polanyi relation, based on which we build a growth model by considering MoS2 edge passivation by halogens, and theoretically reproduce the trend of our experimental observations. These mechanistic understandings enable us to further optimize the fast growth of MoS2 and reach record-large domain sizes that should facilitate practical applications.
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Affiliation(s)
- Qingqing Ji
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Cong Su
- Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Kavli Energy NanoScience Institute at the University of California, Berkeley, Berkeley, CA 94720, USA
- Department of Physics, University of California, Berkeley, Berkeley, CA 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Nannan Mao
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Xuezeng Tian
- Department of Physics and Astronomy, University of California, Los Angeles, Los Angeles, CA 90095, USA
- California NanoSystems Institute, University of California, Los Angeles, Los Angeles, CA 90095, USA
| | - Juan-Carlos Idrobo
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
| | - Jianwei Miao
- Department of Physics and Astronomy, University of California, Los Angeles, Los Angeles, CA 90095, USA
- California NanoSystems Institute, University of California, Los Angeles, Los Angeles, CA 90095, USA
| | - William A. Tisdale
- Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Alex Zettl
- Kavli Energy NanoScience Institute at the University of California, Berkeley, Berkeley, CA 94720, USA
- Department of Physics, University of California, Berkeley, Berkeley, CA 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Ju Li
- Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Jing Kong
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
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