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Ma J, Sa Z, Zhang H, Feng J, Wen J, Wang S, Tian Y. Microconfined Assembly of High-Resolution and Mechanically Robust EGaIn Liquid Metal Stretchable Electrodes for Wearable Electronic Systems. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2402818. [PMID: 38898769 DOI: 10.1002/advs.202402818] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/19/2024] [Revised: 05/24/2024] [Indexed: 06/21/2024]
Abstract
Stretchable electrodes based on liquid metals (LM) are widely used in human-machine interfacing, wearable bioelectronics, and other emerging technologies. However, realizing the high-precision patterning and mechanical stability remains challenging due to the poor wettability of LM. Herein, a method is reported to fabricate LM-based multilayer solid-liquid electrodes (m-SLE) utilizing electrohydrodynamic (EHD) printed confinement template. In these electrodes, LM self-assembled onto these high-resolution templates, assisted by selective wetting on the electrodeposited Cu layer. This study shows that a m-SLE composed of PDMS/Ag/Cu/EGaIn exhibits line width of ≈20 µm, stretchability of ≈100%, mechanical stability ≈10 000 times (stretch/relaxation cycles), and recyclability. The multi-layer structure of m-SLE enables the adjustability of strain sensing, in which the strain-sensitive Ag part can be used for non-distributed detection in human health monitoring and the strain-insensitive EGaIn part can be used as interconnects. In addition, this study demonstrates that near field communication (NFC) devices and multilayer displays integrated by m-SLEs exhibit stable wireless signal transmission capability and stretchability, suggesting its applicability in creating highly-integrated, large-scale commercial, and recyclable wearable electronics.
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Affiliation(s)
- Jingxuan Ma
- National Key Laboratory of Precision Welding & Joining of Materials and Structures, Harbin Institute of Technology, Harbin, 150001, China
| | - Zicheng Sa
- National Key Laboratory of Precision Welding & Joining of Materials and Structures, Harbin Institute of Technology, Harbin, 150001, China
| | - He Zhang
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, 999077, China
- Advanced Biomedical Instrumentation Centre Limited, Hong Kong, 999077, China
| | - Jiayun Feng
- National Key Laboratory of Precision Welding & Joining of Materials and Structures, Harbin Institute of Technology, Harbin, 150001, China
| | - Jiayue Wen
- Zhengzhou Research Institute, Harbin Institute of Technology, Zhengzhou, 450041, China
| | - Shang Wang
- National Key Laboratory of Precision Welding & Joining of Materials and Structures, Harbin Institute of Technology, Harbin, 150001, China
- Zhengzhou Research Institute, Harbin Institute of Technology, Zhengzhou, 450041, China
| | - Yanhong Tian
- National Key Laboratory of Precision Welding & Joining of Materials and Structures, Harbin Institute of Technology, Harbin, 150001, China
- Zhengzhou Research Institute, Harbin Institute of Technology, Zhengzhou, 450041, China
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2
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Wang Y, Zhai W, Ren Y, Zhang Q, Yao Y, Li S, Yang Q, Zhou X, Li Z, Chi B, Liang J, He Z, Gu L, Zhang H. Phase-Controlled Growth of 1T'-MoS 2 Nanoribbons on 1H-MoS 2 Nanosheets. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307269. [PMID: 37934742 DOI: 10.1002/adma.202307269] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/22/2023] [Revised: 10/31/2023] [Indexed: 11/09/2023]
Abstract
2D heterostructures are emerging as alternatives to conventional semiconductors, such as silicon, germanium, and gallium nitride, for next-generation electronics and optoelectronics. However, the direct growth of 2D heterostructures, especially for those with metastable phases still remains challenging. To obtain 2D transition metal dichalcogenides (TMDs) with designed phases, it is highly desired to develop phase-controlled synthetic strategies. Here, a facile chemical vapor deposition method is reported to prepare vertical 1H/1T' MoS2 heterophase structures. By simply changing the growth atmosphere, semimetallic 1T'-MoS2 can be in situ grown on the top of semiconducting 1H-MoS2, forming vertical semiconductor/semimetal 1H/1T' heterophase structures with a sharp interface. The integrated device based on the 1H/1T' MoS2 heterophase structure displays a typical rectifying behavior with a current rectifying ratio of ≈103. Moreover, the 1H/1T' MoS2-based photodetector achieves a responsivity of 1.07 A W-1 at 532 nm with an ultralow dark current of less than 10-11 A. The aforementioned results indicate that 1H/1T' MoS2 heterophase structures can be a promising candidate for future rectifiers and photodetectors. Importantly, the approach may pave the way toward tailoring the phases of TMDs, which can help us utilize phase engineering strategies to promote the performance of electronic devices.
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Affiliation(s)
- Yongji Wang
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Wei Zhai
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Yi Ren
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Yao Yao
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Siyuan Li
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Qi Yang
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Xichen Zhou
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Zijian Li
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Banlan Chi
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Jinzhe Liang
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Zhen He
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
| | - Lin Gu
- Beijing National Center for Electron Microscopy and Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Hua Zhang
- Department of Chemistry, City University of Hong Kong, Hong Kong, China
- Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Hong Kong, China
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen, 518057, China
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3
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Yin L, Cheng R, Ding J, Jiang J, Hou Y, Feng X, Wen Y, He J. Two-Dimensional Semiconductors and Transistors for Future Integrated Circuits. ACS NANO 2024; 18:7739-7768. [PMID: 38456396 DOI: 10.1021/acsnano.3c10900] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/09/2024]
Abstract
Silicon transistors are approaching their physical limit, calling for the emergence of a technological revolution. As the acknowledged ultimate version of transistor channels, 2D semiconductors are of interest for the development of post-Moore electronics due to their useful properties and all-in-one potentials. Here, the promise and current status of 2D semiconductors and transistors are reviewed, from materials and devices to integrated applications. First, we outline the evolution and challenges of silicon-based integrated circuits, followed by a detailed discussion on the properties and preparation strategies of 2D semiconductors and van der Waals heterostructures. Subsequently, the significant progress of 2D transistors, including device optimization, large-scale integration, and unconventional devices, are presented. We also examine 2D semiconductors for advanced heterogeneous and multifunctional integration beyond CMOS. Finally, the key technical challenges and potential strategies for 2D transistors and integrated circuits are also discussed. We envision that the field of 2D semiconductors and transistors could yield substantial progress in the upcoming years and hope this review will trigger the interest of scientists planning their next experiment.
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Affiliation(s)
- Lei Yin
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jiahui Ding
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jian Jiang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yutang Hou
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Xiaoqiang Feng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
- Wuhan Institute of Quantum Technology, Wuhan 430206, People's Republic of China
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4
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Zhang Y, Chang Y, Zhao L, Liu H, Gao J. Atomic insight into the effects of precursor clusters on monolayer WSe 2. NANOSCALE 2024; 16:2391-2401. [PMID: 38226664 DOI: 10.1039/d3nr05562k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/17/2024]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been attracting much attention due to their rich physical and chemical properties. At the end of the chemical vapor deposition growth of 2D TMDCs, the adsorption of excess precursor clusters onto the sample is unavoidable, which will have significant effects on the properties of TMDCs. This is a concern to the academic community. However, the structures of the supported precursor clusters and their effects on the properties of the prepared 2D TMDCs are still poorly understood. Herein, taking monolayer WSe2 as the prototype, we investigated the structure and electronic properties of SeN, WN (N = 1-8), and W8-NSeN (N = 1-7) clusters adsorbed on monolayer WSe2 to gain atomic insight into the precursor cluster adsorption. In contrast to W clusters that tightly bind to the WSe2 surface, Se clusters except for Se1 and Se2 are weakly adsorbed onto WSe2. The interaction between W8-NSeN (N = 1-7) clusters and the WSe2 monolayer decreases with the increase in the Se/W ratio and eventually becomes van der Waals interaction for W1Se7. According to the phase diagram, increasing the Se/W ratio by changing the experimental conditions will increase the ratio of SeN and W1Se7 clusters in the precursor, which can be removed by proper annealing after growth. W clusters induce lots of defect energy levels in the band gap region, while the adsorption of W1Se7 and SeN clusters (N = 3-6, 8) promotes the spatial separation of photo generated carriers at the interface, which is important for optoelectronic applications. Our results indicate that by controlling the Se/W ratio, the interaction between the precursor clusters and WSe2 as well as the electronic properties of the prepared WSe2 monolayer can be effectively tuned, which is significant for the high-quality growth and applications of WSe2.
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Affiliation(s)
- Yanxue Zhang
- Key laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian, 116024, China.
| | - Yuan Chang
- Key laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian, 116024, China.
| | - Luneng Zhao
- Key laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian, 116024, China.
| | - Hongsheng Liu
- Key laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian, 116024, China.
| | - Junfeng Gao
- Key laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian, 116024, China.
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5
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Quan S, Li L, Guo S, Zhao X, Weller D, Wang X, Fu S, Liu R, Hao Y. SnS 2/MoS 2 van der Waals Heterostructure Photodetector with Ultrahigh Responsivity Realized by a Photogating Effect. ACS APPLIED MATERIALS & INTERFACES 2023; 15:59592-59599. [PMID: 38104345 DOI: 10.1021/acsami.3c13004] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/19/2023]
Abstract
Photoresponsivity is a fundamental parameter used to quantify the ability of photoelectric conversion of a photodetector device. High-responsivity photodetectors are essential for numerous optoelectronic applications. Due to the strong light-matter interactions and the high carrier mobility, two-dimensional (2D) materials are promising candidates for the next-generation photodetectors. However, poor light absorption, lack of photoconductive gain, and the interfacial recombination lead to the relatively low responsivity of 2D photodetectors. The photogating effect, which extends the lifetime of photoexcited carriers, provides a simple approach to enhance responsivity in photodetector devices. Here, the O2 plasma treatment introduced surface traps on the SnS2 surface, leading to a gate-tunable photogating effect in SnS2/MoS2 heterojunctions. The heterojunction device exhibits an ultrahigh responsibility of up to 28 A/W. Moreover, the photodetector possesses a wide spectral photoresponse spanning from 300 to 1100 nm and a high specific detectivity (D*) of 4 × 1011 Jones under a 532 nm laser at VDS = 1 V. These results demonstrate that O2 plasma treatment is an efficient and simple avenue to achieve photogating effects, which can be employed to enhance the performance of van der Waals heterostructure photodetector devices and make them suitable for future integration into advanced electronic and optoelectronic systems.
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Affiliation(s)
- Sufeng Quan
- School of Information Science and Engineering, Harbin Institute of Technology at Weihai, Weihai 264209, China
| | - Luyang Li
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, China
| | - Shuai Guo
- School of Science, Department of Optoelectronic Science, Harbin Institute of Technology at Weihai, Weihai 264209, China
| | - Xiaoyu Zhao
- School of Science, Department of Optoelectronic Science, Harbin Institute of Technology at Weihai, Weihai 264209, China
| | - Dieter Weller
- Faculty of Physics and Center for Nanointegration (CENIDE), University of Duisburg-Essen, Duisburg 47057, Germany
| | - Xuefeng Wang
- School of Science, Department of Optoelectronic Science, Harbin Institute of Technology at Weihai, Weihai 264209, China
| | - Shiyou Fu
- School of Information Science and Engineering, Harbin Institute of Technology at Weihai, Weihai 264209, China
- School of Science, Department of Optoelectronic Science, Harbin Institute of Technology at Weihai, Weihai 264209, China
| | - Ruibin Liu
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Yufeng Hao
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, China
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6
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Xu Q, Wu Q, Wang C, Zhang X, Cai Z, Lin L, Gu X, Ostrikov KK, Nan H, Xiao S. High-performance multilayer WSe 2/SnS 2p-n heterojunction photodetectors by two step confined space chemical vapor deposition. NANOTECHNOLOGY 2023; 34:505604. [PMID: 37748477 DOI: 10.1088/1361-6528/acfcc3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/08/2023] [Accepted: 09/25/2023] [Indexed: 09/27/2023]
Abstract
Two-dimensional (2D) p-n heterojunctions have attracted great attention due to their outstanding properties in electronic and optoelectronic devices, especially in photodetectors. Various types of heterojunctions have been constituted by mechanical exfoliation and stacking. However, achieving controlled growth of heterojunction structures remains a tremendous challenge. Here, we employed a two-step KI-assisted confined-space chemical vapor deposition method to prepare multilayer WSe2/SnS2p-n heterojunctions. Optical characterization results revealed that the prepared WSe2/SnS2vertical heterostructures have clear interfaces as well as vertical heterostructures. The electrical and optoelectronic properties were investigated by constructing the corresponding heterojunction devices, which exhibited good rectification characteristics and obtained a high detectivity of 7.85 × 1012Jones and a photoresponse of 227.3 A W-1under visible light irradiation, as well as a fast rise/fall time of 166/440μs. These remarkable performances are likely attributed to the ultra-low dark current generated in the depletion region at the junction and the high direct tunneling current during illumination. This work demonstrates the value of multilayer WSe2/SnS2heterojunctions for applications in high-performance photodetectors.
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Affiliation(s)
- Qilei Xu
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, People's Republic of China
| | - Qianqian Wu
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, People's Republic of China
| | - Chenglin Wang
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, People's Republic of China
| | - Xiumei Zhang
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, People's Republic of China
| | - Zhengyang Cai
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, People's Republic of China
| | - Liangliang Lin
- School of Chemical and Material Engineering, Jiangnan University, Wuxi 214122, People's Republic of China
| | - Xiaofeng Gu
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, People's Republic of China
| | - Kostya Ken Ostrikov
- School of Physics and Chemistry and QUT Centre for Materials Science, Queensland University of Technology (QUT), Brisbane, Queensland 4000, Australia
| | - Haiyan Nan
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, People's Republic of China
| | - Shaoqing Xiao
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, People's Republic of China
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7
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Wang X, Zhao X, Guo S, Weller D, Quan S, Wu M, Liu W, Liu R. Visualized and Nondestructive Quality Identification of Two-Dimensional MoS 2 Based on Principal Component Analysis. J Phys Chem Lett 2023; 14:8088-8094. [PMID: 37656910 DOI: 10.1021/acs.jpclett.3c02093] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/03/2023]
Abstract
To date, the common quality characterizations for MoS2 are inefficient or cause irreversible damage to the samples, which have limited scalability and low throughput. Here, we propose a visualized and nondestructive approach to evaluate the quality of MoS2 based on the PCA machine learning method. Through PCA processing of PL mapping, the CVD grown MoS2 with different edge defect densities can be well distinguished. Furthermore, six twin GBs along the sulfur zigzag direction of the six pointed MoS2 stars are also successfully identified. To verify the correctness of the identification results, we measured the lifetime mapping and thermal expansion coefficient of the synthesized MoS2 samples. It is found that the high quality MoS2 samples have a shorter carrier lifetime (∼0.291 ns) and lower thermal expansion coefficient (∼2.03 × 10-5K-1). Therefore, our work offers a new approach to evaluate the quality of MoS2 to drive their practical application.
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Affiliation(s)
- Xuefeng Wang
- School of Science, Department of Optoelectronic Science, Harbin Institute of Technology at Weihai, Weihai 264209, P. R. China
| | - Xiaoyu Zhao
- School of Science, Department of Optoelectronic Science, Harbin Institute of Technology at Weihai, Weihai 264209, P. R. China
| | - Shuai Guo
- School of Science, Department of Optoelectronic Science, Harbin Institute of Technology at Weihai, Weihai 264209, P. R. China
| | - Dieter Weller
- Faculty of Physics and Center for Nanointegration (CENIDE), University of Duisburg-Essen, Duisburg 47057, Germany
| | - Sufeng Quan
- School of Science, Department of Optoelectronic Science, Harbin Institute of Technology at Weihai, Weihai 264209, P. R. China
| | - Mengxuan Wu
- School of Science, Department of Optoelectronic Science, Harbin Institute of Technology at Weihai, Weihai 264209, P. R. China
| | - Wenjun Liu
- School of Science, Department of Optoelectronic Science, Harbin Institute of Technology at Weihai, Weihai 264209, P. R. China
| | - Ruibin Liu
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
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8
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Liang S, Yang J, Li F, Xie S, Song N, Hu L. Recent progress in liquid metal printing and its applications. RSC Adv 2023; 13:26650-26662. [PMID: 37681047 PMCID: PMC10481125 DOI: 10.1039/d3ra04356h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Accepted: 08/31/2023] [Indexed: 09/09/2023] Open
Abstract
This paper focuses on the latest research printing technology and broad application for flexible liquid metal (LM) materials. Through the newest template printing method, centrifugal force assisted method, pen lithography technology, and laser method, the precision of liquid metal printing on the devices was improved to 10 nm. The development of novel liquid metal inks, such as PVA-LM ink and ethanol/PDMS/LM double emulsion ink, have further enhanced the recovery, rapid printing, high conductivity, and strain resistance. At the same time, liquid metals also show promise in the application of biochemical sensors, photocatalysts, composite materials, driving machines, and electrode materials. Liquid metals have been applied to biomedical, pressure/gas, and electrochemical sensors. The sensitivity, biostability, and electrochemical performance of these LM sensors were improved rapidly. They could continue to be used in healthy respiratory, heartbeat monitoring, and dopamine detection. Meanwhile, the applications of liquid metal droplets in catalytic-assisted MoS2 deposition, catalytic growth of two-dimensional (2D) lamellar, catalytic free radical polymerization, catalytic hydrogen absorption/dehydrogenation, photo/electrocatalysis, and other fields were also summarized. Through improving liquid metal composites, magnetic, thermal, electrical, and tensile enhancement alloys, and shape memory alloys with excellent properties could also be prepared. Finally, the applications of liquid metal in micro-motors, intelligent robot feet, nanorobots, self-actuation, and electrode materials were also summarized. This paper comprehensively summarizes the practical application of liquid metals in different fields, which helps understand LMs development trends, and lays a foundation for subsequent research.
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Affiliation(s)
- Shuting Liang
- College of Chemical and Environmental Engineering, Chongqing Key Laboratory of Environmental Materials & Remediation Technologies, Chongqing University of Arts and Sciences Chongqing 402160 PR China
- Key Laboratory of Intelligent Textile and Flexible Interconnection of Zhejiang Province Hangzhou 310018 China
| | - Jie Yang
- College of Chemical and Environmental Engineering, Chongqing Key Laboratory of Environmental Materials & Remediation Technologies, Chongqing University of Arts and Sciences Chongqing 402160 PR China
| | - Fengjiao Li
- Shenzhen Automotive Research Institute, Beijing Institute of Technology Shenzhen 518118 PR China
| | - Shunbi Xie
- College of Chemical and Environmental Engineering, Chongqing Key Laboratory of Environmental Materials & Remediation Technologies, Chongqing University of Arts and Sciences Chongqing 402160 PR China
| | - Na Song
- Department of Oncology, Chongqing Municipal Chinese Medicine Hospital Chongqing 400021 China
| | - Liang Hu
- Key Laboratory of Biomechanics and Mechanobiology, School of Biological Science and Medical Engineering, Beihang University Beijing 100083 PR China
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9
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Sun X, Liu Y, Shi J, Si C, Du J, Liu X, Jiang C, Yang S. Controllable Synthesis of 2H-1T' Mo x Re (1- x ) S 2 Lateral Heterostructures and Their Tunable Optoelectronic Properties. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2304171. [PMID: 37278555 DOI: 10.1002/adma.202304171] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/04/2023] [Revised: 05/24/2023] [Indexed: 06/07/2023]
Abstract
Constructing heterostructures and doping are valid ways to improve the optoelectronic properties of transition metal dichalcogenides (TMDs) and optimize the performance of TMDs-based photodetectors. Compared with transfer techniques, chemical vapor deposition (CVD) has higher efficiency in preparing heterostructures. As for the one-step CVD growth of heterostructures, cross-contamination between the two materials may occur during the growth process, which may provide the possibility of one-step simultaneous realization of controllable doping and formation of alloy-based heterostructures by finely tuning the growth dynamics. Here, 2H-1T' Mox Re(1- x ) S2 alloy-to-alloy lateral heterostructures are synthesized through this one-step CVD growth method, utilizing the cross-contamination and different growth temperatures of the two alloys. Due to the doping of a small amount of Re atoms in 2H MoS2 , 2H Mox Re(1- x ) S2 has a high response rejection ratio in the solar-blind ultraviolet (SBUV) region and exhibits a positive photoconductive (PPC) effect. While the 1T' Mox Re(1- x ) S2 formed by heavily doping Mo atoms into 1T' ReS2 will produce a negative photoconductivity (NPC) effect under UV laser irradiation. The optoelectronic property of 2H-1T' Mox Re(1- x ) S2 -based heterostructures can be modulated by gate voltage. These findings are expected to expand the functionality of traditional optoelectronic devices and have potential applications in optoelectronic logic devices.
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Affiliation(s)
- Xiaona Sun
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, P. R. China
| | - Yang Liu
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, P. R. China
| | - Jianwei Shi
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Chen Si
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, P. R. China
| | - Jiantao Du
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, P. R. China
| | - Xinfeng Liu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Chengbao Jiang
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, P. R. China
| | - Shengxue Yang
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, P. R. China
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10
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Huang W, Wu J, Li W, Chen G, Chu C, Li C, Zhu Y, Yang H, Chao Y. Fabrication of Silicon Nanowires by Metal-Assisted Chemical Etching Combined with Micro-Vibration. MATERIALS (BASEL, SWITZERLAND) 2023; 16:5483. [PMID: 37570187 PMCID: PMC10420322 DOI: 10.3390/ma16155483] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Revised: 07/27/2023] [Accepted: 08/01/2023] [Indexed: 08/13/2023]
Abstract
In this work, we design a micro-vibration platform, which combined with the traditional metal-assisted chemical etching (MaCE) to etch silicon nanowires (SiNWs). The etching mechanism of SiNWs, including in the mass-transport (MT) and charge-transport (CT) processes, was explored through the characterization of SiNW's length as a function of MaCE combined with micro-vibration conditions, such as vibration amplitude and frequency. The scanning electron microscope (SEM) experimental results indicated that the etching rate would be continuously improved with an increase in amplitude and reached its maximum at 4 μm. Further increasing amplitude reduced the etching rate and affected the morphology of the SiNWs. Adjusting the vibration frequency would result in a maximum etching rate at a frequency of 20 Hz, and increasing the frequency will not help to improve the etching effects.
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Affiliation(s)
- Weiye Huang
- School of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou 310018, China; (W.H.); (W.L.); (G.C.); (C.C.); (Y.Z.); (H.Y.)
| | - Junyi Wu
- Sanmen Sanyou Technology Inc., Taizhou 472000, China;
| | - Wenxin Li
- School of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou 310018, China; (W.H.); (W.L.); (G.C.); (C.C.); (Y.Z.); (H.Y.)
| | - Guojin Chen
- School of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou 310018, China; (W.H.); (W.L.); (G.C.); (C.C.); (Y.Z.); (H.Y.)
| | - Changyong Chu
- School of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou 310018, China; (W.H.); (W.L.); (G.C.); (C.C.); (Y.Z.); (H.Y.)
| | - Chao Li
- School of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou 310018, China; (W.H.); (W.L.); (G.C.); (C.C.); (Y.Z.); (H.Y.)
| | - Yucheng Zhu
- School of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou 310018, China; (W.H.); (W.L.); (G.C.); (C.C.); (Y.Z.); (H.Y.)
| | - Hui Yang
- School of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou 310018, China; (W.H.); (W.L.); (G.C.); (C.C.); (Y.Z.); (H.Y.)
| | - Yan Chao
- School of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou 310018, China; (W.H.); (W.L.); (G.C.); (C.C.); (Y.Z.); (H.Y.)
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11
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Wang S, Ding D, Li P, Sui Y, Liu G, Zhao S, Xiao R, Tian C, Chen Z, Wang H, Chen C, Mu G, Liu Y, Zhang Y, Jin C, Ding F, Yu G. Concentration Phase Separation of Substitution-Doped Atoms in TMDCs Monolayer. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2301027. [PMID: 37060218 DOI: 10.1002/smll.202301027] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/05/2023] [Revised: 03/28/2023] [Indexed: 06/19/2023]
Abstract
The density and spatial distribution of substituted dopants affect the transition metal dichalcogenides (TMDCs) materials properties. Previous studies have demonstrated that the density of dopants in TMDCs increases with the amount of doping, and the phenomenon of doping concentration difference between the nucleation center and the edge is observed, but the spatial distribution law of doping atoms has not been carefully studied. Here, it is demonstrated that the spatial distribution of dopants changes at high doping concentrations. The spontaneous formation of an interface with a steep doping concentration change is named concentration phase separation (CPS). The difference in the spatial distribution of dopants on both sides of the interface can be identified by an optical microscope. This is consistent with the results of spectral analysis and microstructure characterization of scanning transmission electron microscope. According to the calculation results of density functional theory, the chemical potential has two relatively stable energies as the doping concentration increases, which leads to the spontaneous formation of CPS. Understanding the abnormal phenomena is important for the design of TMDCs devices. This work has great significance in the establishment and improvement of the doping theory and the design of the doping process for 2D materials.
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Affiliation(s)
- Shuang Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Degong Ding
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China
| | - Pai Li
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Yanping Sui
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Guanyu Liu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Sunwen Zhao
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Runhan Xiao
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Chuang Tian
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhiying Chen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Haomin Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Chen Chen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Gang Mu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yixin Liu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yanhui Zhang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Chuanhong Jin
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China
| | - Feng Ding
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Faculty of Materials Science and Engineering/Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, 1068 Xueyuan Blvd, Shenzhen, 518055, China
| | - Guanghui Yu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
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12
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Ahmad W, Wu J, Zhuang Q, Neogi A, Wang Z. Research Process on Photodetectors based on Group-10 Transition Metal Dichalcogenides. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2207641. [PMID: 36658722 DOI: 10.1002/smll.202207641] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/07/2022] [Revised: 01/01/2023] [Indexed: 06/17/2023]
Abstract
Rapidly evolving group-10 transition metal dichalcogenides (TMDCs) offer remarkable electronic, optical, and mechanical properties, making them promising candidates for advanced optoelectronic applications. Compared to most TMDCs semiconductors, group-10-TMDCs possess unique structures, narrow bandgap, and influential physical properties that motivate the development of broadband photodetectors, specifically infrared photodetectors. This review presents the latest developments in the fabrication of broadband photodetectors based on conventional 2D TMDCs. It mainly focuses on the recent developments in group-10 TMDCs from the perspective of the lattice structure and synthesis techniques. Recent progress in group-10 TMDCs and their heterostructures with different dimensionality of materials-based broadband photodetectors is provided. Moreover, this review accounts for the latest applications of group-10 TMDCs in the fields of nanoelectronics and optoelectronics. Finally, conclusions and outlooks are summarized to provide perspectives for next-generation broadband photodetectors based on group-10 TMDCs.
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Affiliation(s)
- Waqas Ahmad
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Jiang Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Qiandong Zhuang
- Physics Department, Lancaster University, Lancaster, LA14YB, UK
| | - Arup Neogi
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Zhiming Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
- Institute for Advanced Study, Chengdu University, Chengdu, 610106, China
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13
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Giri A, Park G, Jeong U. Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications. Chem Rev 2023; 123:3329-3442. [PMID: 36719999 PMCID: PMC10103142 DOI: 10.1021/acs.chemrev.2c00455] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/01/2023]
Abstract
The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.
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Affiliation(s)
- Anupam Giri
- Department of Chemistry, Faculty of Science, University of Allahabad, Prayagraj, UP-211002, India
| | - Gyeongbae Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea.,Functional Materials and Components R&D Group, Korea Institute of Industrial Technology, Gwahakdanji-ro 137-41, Sacheon-myeon, Gangneung, Gangwon-do25440, Republic of Korea
| | - Unyong Jeong
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea
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Su W, Zhang S, Liu C, Tian Q, Liu X, Li K, Lv Y, Liao L, Zou X. Interlayer Transition Induced Infrared Response in ReS 2/2D Perovskite van der Waals Heterostructure Photodetector. NANO LETTERS 2022; 22:10192-10199. [PMID: 36475758 DOI: 10.1021/acs.nanolett.2c04328] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
The emerging Ruddlesden-Popper two-dimensional perovskite (2D PVK) has recently joined the family of 2D semiconductors as a potential competitor for building van der Waals (vdW) heterostructures in future optoelectronics. However, to date, most of the reported heterostructures based on 2D PVKs suffer from poor spectral response that is caused by intrinsic wide bandgap of constituting materials. Herein, a direct heterointerface bandgap (∼0.4 eV) between 2D PVK and ReS2 is demonstrated. The strong interlayer coupling reduces the energy interval at the heterojunction region so that the heterostructure shows high sensitivity with the spectral response expanding to 2000 nm. The large type-II band offsets exceeding 1.1 eV ensure fast photogenerated carriers separation at the heterointerface. When this heterostructure is used as a self-driven photodetector, it exhibits a record high detectivity up to 1.8 × 1014 Jones, surpassing any reported 2D self-driven devices, and an impressive external quantum efficiency of 68%.
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Affiliation(s)
- Wanhan Su
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha410082, China
| | - Sen Zhang
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha410082, China
| | - Chang Liu
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha410082, China
| | - Qianlei Tian
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha410082, China
| | - Xingqiang Liu
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha410082, China
| | - Kenli Li
- China National Supercomputing Center in Changsha, HunanChangsha410082, China
| | - Yawei Lv
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha410082, China
| | - Lei Liao
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha410082, China
- School of Physics and Electronic Engineering, Harbin Normal University, Harbin150025, China
| | - Xuming Zou
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha410082, China
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15
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Lv T, Huang X, Zhang W, Deng C, Chen F, Wang Y, Long J, Gao H, Deng L, Ye L, Xiong W. High-Responsivity Multiband and Polarization-Sensitive Photodetector Based on the TiS 3/MoS 2 Heterojunction. ACS APPLIED MATERIALS & INTERFACES 2022; 14:48812-48820. [PMID: 36268890 DOI: 10.1021/acsami.2c12332] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Two-dimensional (2D) material photodetectors have received considerable attention in optoelectronics as a result of their extraordinary properties, such as passivated surfaces, strong light-matter interactions, and broad spectral responses. However, single 2D material photodetectors still suffer from low responsivity, large dark current, and long response time as a result of their atomic-level thickness, large binding energy, and susceptibility to defects. Here, a transition metal trichalcogenide TiS3 with excellent photoelectric characteristics, including a direct bandgap (1.1 eV), high mobility, high air stability, and anisotropy, is selected to construct a type-II heterojunction with few-layer MoS2, aiming to improve the performance of 2D photodetectors. An ultrahigh photoresponsivity of the TiS3/MoS2 heterojunction of 48 666 A/W at 365 nm, 20 000 A/W at 625 nm, and 251 A/W at 850 nm is achieved under light-emitting diode illumination. The response time and dark current are 2 and 3 orders of magnitude lower than those of the current TiS3 photodetector with the highest photoresponsivity (2500 A/W), respectively. Furthermore, polarized four-wave mixing spectroscopy and polarized photocurrent measurements verify its polarization-sensitive characteristics. This work confirms the excellent potential of TiS3/MoS2 heterojunctions for air-stable, high-performance, polarization-sensitive, and multiband photodetectors, and the excellent type-II TiS3/MoS2 heterojunction system may accelerate the design and fabrication of other 2D functional devices.
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Affiliation(s)
- Ting Lv
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei430074, People's Republic of China
| | - Xinyu Huang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei430074, People's Republic of China
- School of Optical and Electronic Information, Huazhong University of Science and Technology,Wuhan, Hubei430074, People's Republic of China
- Hubei Yangtze Memory Laboratories, Wuhan, Hubei430205, People's Republic of China
| | - Wenguang Zhang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei430074, People's Republic of China
| | - Chunsan Deng
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei430074, People's Republic of China
| | - Fayu Chen
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei430074, People's Republic of China
| | - Yingchen Wang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei430074, People's Republic of China
| | - Jing Long
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei430074, People's Republic of China
| | - Hui Gao
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei430074, People's Republic of China
- Optics Valley Laboratory, Wuhan, Hubei430074, People's Republic of China
| | - Leimin Deng
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei430074, People's Republic of China
- Optics Valley Laboratory, Wuhan, Hubei430074, People's Republic of China
| | - Lei Ye
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei430074, People's Republic of China
- School of Optical and Electronic Information, Huazhong University of Science and Technology,Wuhan, Hubei430074, People's Republic of China
- Hubei Yangtze Memory Laboratories, Wuhan, Hubei430205, People's Republic of China
| | - Wei Xiong
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei430074, People's Republic of China
- Optics Valley Laboratory, Wuhan, Hubei430074, People's Republic of China
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16
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Wang R, Guo S, Li Z, Weller D, Quan S, Yu J, Wu M, Jiang J, Wang Y, Liu R. Strong Anisotropic Optical Properties by Rolling up MoS 2 Nanoflake. J Phys Chem Lett 2022; 13:8409-8415. [PMID: 36048894 DOI: 10.1021/acs.jpclett.2c02072] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Although anisotropic two-dimensional materials have attracted great scientific interest, the anisotropy of those materials is limited to particular crystallographic directions. Herein, with dimension confining, MoS2 nanoscrolls are successfully fabricated by a rolling-up process after dropping an ethanol-water solution on a chemical vapor deposition-grown MoS2 monolayer. The anisotropic vibrational and optical properties are systematically studied by angle-resolved polarized spectroscopy, including Raman, photoluminescence, and reflection measurements. Upon comparing the photoluminescence results between MoS2 nanoscrolls and nanosheets, an obvious PL quenching phenomenon is observed, indicating the efficient separation of photon-induced carriers. Moreover, the time-resolved PL test identifying the lifetime of the carriers is decreased to 303 ps in the nanoscrolls, indicating a higher carrier-transfer efficiency. In summary, our work demonstrates the strong anisotropic optical properties of MoS2 nanorolls, showing the nanoscrolls are a promising candidate for the fabrication of multifunctional devices.
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Affiliation(s)
- Runqiu Wang
- School of Science, Department of Optoelectronic Science, Harbin Institute of Technology at Weihai, Weihai 264209, PR China
| | - Shuai Guo
- School of Science, Department of Optoelectronic Science, Harbin Institute of Technology at Weihai, Weihai 264209, PR China
| | - Zhonglin Li
- School of Science, Department of Optoelectronic Science, Harbin Institute of Technology at Weihai, Weihai 264209, PR China
| | - Dieter Weller
- Faculty of Physics and Center for Nanointegration (CENIDE), University of Duisburg-Essen, Lotharstr. 1, Duisburg 47057, Germany
| | - Sufeng Quan
- School of Science, Department of Optoelectronic Science, Harbin Institute of Technology at Weihai, Weihai 264209, PR China
| | - Jing Yu
- School of Science, Department of Optoelectronic Science, Harbin Institute of Technology at Weihai, Weihai 264209, PR China
| | - Mengxuan Wu
- School of Science, Department of Optoelectronic Science, Harbin Institute of Technology at Weihai, Weihai 264209, PR China
| | - Jie Jiang
- School of Marine Science and Technology, Harbin Institute of Technology at Weihai, Weihai, Shandong 264209, PR China
| | - Yingying Wang
- School of Science, Department of Optoelectronic Science, Harbin Institute of Technology at Weihai, Weihai 264209, PR China
| | - Ruibin Liu
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, PR China
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17
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Lu J, Ye Q, Ma C, Zheng Z, Yao J, Yang G. Dielectric Contrast Tailoring for Polarized Photosensitivity toward Multiplexing Optical Communications and Dynamic Encrypt Technology. ACS NANO 2022; 16:12852-12865. [PMID: 35914000 DOI: 10.1021/acsnano.2c05114] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
A selective-area oxidation strategy is developed to polarize high-symmetry 2D layered materials (2DLMs). The dichroic ratio of the derived O-WS2/WS2 photodetector reaches ∼8, which is competitive among state-of-the-art polarization photodetectors. Finite-different time-domain simulations consolidate that the polarization-sensitive photoresponse is associated with anisotropic spacial confinement, which gives rise to distinct dielectric contrasts for linearly polarized light of various directions and thus the polarization-dependent near-field distribution. Furthermore, selective-area oxidation treatment brings about dual effects, comprising the in situ formation of seamless in-plane WS2 homojunctions by thickness tailoring and the formation of out-of-plane O-WS2/WS2 heterojunctions. As a consequence, the recombination of photocarriers is markedly suppressed, resulting in outstanding photosensitivity with the optimized responsivity, external quantum efficiency, and detectivity of 0.161 A/W, 49.4%, and 1.4 × 1011 Jones for an O-WS2/WS2 photodetector in a self-powered mode. A scheme of multiplexing optical communications is revealed by harnessing the intensity and polarization state of light as independent transmission channels. Furthermore, dynamic encryption by leveraging the polarization state as a secret key is proposed. In the end, broad universality is reinforced through the induction of linear dichroism within 2D WSe2 crystals. On the whole, this study provides an additional perspective on polarization optoelectronics based on 2DLMs.
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Affiliation(s)
- Jianting Lu
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
| | - Qiaojue Ye
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
| | - Churong Ma
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Institute of Photonics Technology, Jinan University, Guangzhou 511443, China
| | - Zhaoqiang Zheng
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, Guangdong, P. R. China
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
- Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
- Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
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18
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Li J, Liang J, Yang X, Li X, Zhao B, Li B, Duan X. Controllable Preparation of 2D Vertical van der Waals Heterostructures and Superlattices for Functional Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2107059. [PMID: 35297544 DOI: 10.1002/smll.202107059] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/15/2021] [Revised: 01/27/2022] [Indexed: 06/14/2023]
Abstract
2D van der Waals heterostructures (vdWHs) and superlattices (SLs) with exotic physical properties and applications for new devices have attracted immense interest. Compared to conventionally bonded heterostructures, the dangling-bond-free surface of 2D layered materials allows for the feasible integration of various materials to produce vdWHs without the requirements of lattice matching and processing compatibility. The quality of interfaces in artificially stacked vdWHs/vdWSLs and scalability of production remain among the major challenges in the field of 2D materials. Fortunately, bottom-up methods exhibit relatively high controllability and flexibility. The growth parameters, such as the temperature, precursors, substrate, and carrier gas, can be carefully and comprehensively controlled to produce high-quality interfaces and wafer-scale products of vdWHs/vdWSLs. This review focuses on three types of bottom-up methods for the assembly of vdWHs and vdWSLs with atomically clean and electronically sharp interfaces: chemical/physical vapor deposition, metal-organic chemical vapor deposition, and ultrahigh vacuum growth. These methods can intuitively illustrate the great flexibility and controllability of bottom-up methods for the preparation of vdWHs/vdWSLs. The latest progress in vdWHs and vdWSLs, related physical phenomena, and (opto)electronic devices are summarized. Finally, the authors discuss current challenges and future perspectives in the synthesis and application of vdWHs and vdWSLs.
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Affiliation(s)
- Jia Li
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Jingyi Liang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Xiangdong Yang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Xin Li
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Bei Zhao
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Bo Li
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
- School of Physics and Electronics, Hunan University, Changsha, P. R. China
| | - Xidong Duan
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
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Lin H, Jiang A, Xing S, Li L, Cheng W, Li J, Miao W, Zhou X, Tian L. Advances in Self-Powered Ultraviolet Photodetectors Based on P-N Heterojunction Low-Dimensional Nanostructures. NANOMATERIALS 2022; 12:nano12060910. [PMID: 35335723 PMCID: PMC8953703 DOI: 10.3390/nano12060910] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/11/2022] [Revised: 03/02/2022] [Accepted: 03/03/2022] [Indexed: 02/04/2023]
Abstract
Self-powered ultraviolet (UV) photodetectors have attracted considerable attention in recent years because of their vast applications in the military and civil fields. Among them, self-powered UV photodetectors based on p-n heterojunction low-dimensional nanostructures are a very attractive research field due to combining the advantages of low-dimensional semiconductor nanostructures (such as large specific surface area, excellent carrier transmission channel, and larger photoconductive gain) with the feature of working independently without an external power source. In this review, a selection of recent developments focused on improving the performance of self-powered UV photodetectors based on p-n heterojunction low-dimensional nanostructures from different aspects are summarized. It is expected that more novel, dexterous, and intelligent photodetectors will be developed as soon as possible on the basis of these works.
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Affiliation(s)
- Haowei Lin
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (A.J.); (S.X.); (L.L.); (W.C.); (J.L.); (W.M.); (X.Z.); (L.T.)
- Henan International Joint Laboratory of Nano-Photoelectric Magnetic Materials, Henan University of Technology, Zhengzhou 450001, China
- Correspondence:
| | - Ao Jiang
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (A.J.); (S.X.); (L.L.); (W.C.); (J.L.); (W.M.); (X.Z.); (L.T.)
| | - Shibo Xing
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (A.J.); (S.X.); (L.L.); (W.C.); (J.L.); (W.M.); (X.Z.); (L.T.)
| | - Lun Li
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (A.J.); (S.X.); (L.L.); (W.C.); (J.L.); (W.M.); (X.Z.); (L.T.)
| | - Wenxi Cheng
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (A.J.); (S.X.); (L.L.); (W.C.); (J.L.); (W.M.); (X.Z.); (L.T.)
| | - Jinling Li
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (A.J.); (S.X.); (L.L.); (W.C.); (J.L.); (W.M.); (X.Z.); (L.T.)
| | - Wei Miao
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (A.J.); (S.X.); (L.L.); (W.C.); (J.L.); (W.M.); (X.Z.); (L.T.)
| | - Xuefei Zhou
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (A.J.); (S.X.); (L.L.); (W.C.); (J.L.); (W.M.); (X.Z.); (L.T.)
| | - Li Tian
- School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China; (A.J.); (S.X.); (L.L.); (W.C.); (J.L.); (W.M.); (X.Z.); (L.T.)
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20
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Chakraborty SK, Kundu B, Nayak B, Dash SP, Sahoo PK. Challenges and opportunities in 2D heterostructures for electronic and optoelectronic devices. iScience 2022; 25:103942. [PMID: 35265814 PMCID: PMC8898921 DOI: 10.1016/j.isci.2022.103942] [Citation(s) in RCA: 17] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/25/2022] Open
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21
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Zheng Y, Cao B, Tang X, Wu Q, Wang W, Li G. Vertical 1D/2D Heterojunction Architectures for Self-Powered Photodetection Application: GaN Nanorods Grown on Transition Metal Dichalcogenides. ACS NANO 2022; 16:2798-2810. [PMID: 35084838 DOI: 10.1021/acsnano.1c09791] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Van der Waals (vdW) heterojunctions based on two-dimensional (2D) transition metal dichalcogenide (TMD) materials have attracted the attention of researchers to conduct fundamental investigations on emerging physical phenomena and expanding diverse nano-optoelectronic devices. Herein, the quasi-van der Waals epitaxial (QvdWE) growth of vertically aligned one-dimensional (1D) GaN nanorod arrays (NRAs) on TMDs/Si substrates is reported, and their vdW heterojunctions in the applications of high-performance self-powered photodetection are demonstrated accordingly. Such 1D/2D hybrid systems fully combine the advantages of the strong light absorption of 1D GaN nanoarrays and the excellent electrical properties of 2D TMD materials, boosting the photogenerated current density, which demonstrates a light on/off ratio above 105. The device exhibits a competitive photovoltaic photoresponsivity over 10 A W-1 under a weak detectable light signal without any external bias, which is attributed to the efficient photogenerated charge separation under the strong built-in potential from the type-II band alignment of GaN NRAs/TMDs. This work presents a QvdWE route to prepare 1D/2D heterostructures for the fabrication of self-powered photodetectors, which shows promising potentials for practical applications of space communications, sensing networks, and environmental monitoring.
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Affiliation(s)
- Yulin Zheng
- State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
| | - Ben Cao
- State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
| | - Xin Tang
- State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
| | - Qing Wu
- State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
| | - Wenliang Wang
- State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
- Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China
| | - Guoqiang Li
- State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
- Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China
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22
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Pham PV, Bodepudi SC, Shehzad K, Liu Y, Xu Y, Yu B, Duan X. 2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges. Chem Rev 2022; 122:6514-6613. [PMID: 35133801 DOI: 10.1021/acs.chemrev.1c00735] [Citation(s) in RCA: 102] [Impact Index Per Article: 51.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro-nano-pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.
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Affiliation(s)
- Phuong V Pham
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Srikrishna Chanakya Bodepudi
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Khurram Shehzad
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Yuan Liu
- School of Physics and Electronics, Hunan University, Hunan 410082, China
| | - Yang Xu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Bin Yu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles (UCLA), Los Angeles, California 90095-1569, United States
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23
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Yang S, Luo P, Wang F, Liu T, Zhao Y, Ma Y, Li H, Zhai T. Van der Waals Epitaxy of Bi 2 Te 2 Se/Bi 2 O 2 Se Vertical Heterojunction for High Performance Photodetector. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2105211. [PMID: 34850539 DOI: 10.1002/smll.202105211] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/28/2021] [Revised: 10/18/2021] [Indexed: 06/13/2023]
Abstract
Bismuth oxyselenide (Bi2 O2 Se) has emerged as a promising candidate for electronic and optoelectronic applications due to its outstanding electron mobility and ambient stability. However, high dark current and relatively slow photoresponse that originate from high charge carrier concentration as well as bolometric effect in Bi2 O2 Se inhibit further improvement of Bi2 O2 Se based photodetectors. Here, a one-step van der Waals (vdW) epitaxy synthesis of Bi2 Te2 Se/Bi2 O2 Se vertical heterojunction with type-II band alignment and high-quality interface is demonstrated. The crystal quality and uniformity of the heterojunction are supported by Raman, transmission electron microscopy and energy dispersive spectroscopy results. A photodetector based on Bi2 Te2 Se/Bi2 O2 Se heterojunction demonstrates steady photoresponse over a large wavelength range (532-1456 nm), with a high specific responsivity of 2.21 × 103 A W-1 at 532 nm and fast response speed of 50 ms. Moreover, field effect regulation allows for further improvement of the photoresponse performance of the heterojunction field effect transistor device, where the responsivity can be increased to 3.34 × 103 A W-1 with a 60 V gate voltage. Overall, the one-step vdW epitaxy process is a promising and convenient route towards constructing high quality Bi2 O2 Se based heterojunction for improving its photodetection performance.
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Affiliation(s)
- Sijie Yang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Peng Luo
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Fakun Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Teng Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yinghe Zhao
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Ying Ma
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Huiqiao Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
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24
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Wang D, Zhang Z, Huang B, Zhang H, Huang Z, Liu M, Duan X. Few-Layer WS 2-WSe 2 Lateral Heterostructures: Influence of the Gas Precursor Selenium/Tungsten Ratio on the Number of Layers. ACS NANO 2022; 16:1198-1207. [PMID: 34927429 DOI: 10.1021/acsnano.1c08979] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Two-dimensional (2D) lateral heterostructures based on transition metal dichalcogenides (TMDCs) attract great interest due to their properties and potential applications in electronics and optoelectronics, such as p-n rectifying diodes, light-emitting diodes, photovoltaic devices, and bipolar junction transistors. However, the studies of 2D lateral heterostructures have mainly focused on monolayer nanosheets despite bilayer heterostructures exhibiting higher performance in many electronic and optoelectronic devices. It remains a great challenge to synthesize lateral heterostructures with few layers. Here, we report the growth of bilayer-bilayer (bl-bl), bilayer-bilayer-monolayer (bl-bl-mo), bilayer-monolayer (bl-mo), monolayer-bilayer (mo-bl), and monolayer-monolayer (mo-mo) tungsten disulfide (WS2) and tungsten diselenide (WSe2) lateral heterostructures. The selenium/tungsten (Se/W) ratio of WSe2 precursor powders and the growth atmosphere can be changed with the extension of annealing time, which influences the layer number of the heterostructures. More bilayer WSe2 epitaxially grows at the WS2 edge with short annealing time (high Se/W ratio), and more monolayer WSe2 grows at the WS2 edge with long annealing time (low Se/W ratio). The density functional theory (DFT) calculations provide an in-depth understanding of the growth mechanism. This report expands the 2D material lateral heterostructure family, which gives impetus to their applications in electronics and optoelectronics.
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Affiliation(s)
- Di Wang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, 410082 Changsha, China
| | - Zhengwei Zhang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, 410082 Changsha, China
| | - Bolong Huang
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR 999077, China
| | - Hongmei Zhang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, 410082 Changsha, China
| | - Ziwei Huang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, 410082 Changsha, China
| | - Miaomiao Liu
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, 410082 Changsha, China
| | - Xidong Duan
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, 410082 Changsha, China
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25
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Sett S, Parappurath A, Gill NK, Chauhan N, Ghosh A. Engineering sensitivity and spectral range of photodetection in van der Waals materials and hybrids. NANO EXPRESS 2022. [DOI: 10.1088/2632-959x/ac46b9] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Abstract
Abstract
Exploration of van der Waals heterostructures in the field of optoelectronics has produced photodetectors with very high bandwidth as well as ultra-high sensitivity. Appropriate engineering of these heterostructures allows us to exploit multiple light-to-electricity conversion mechanisms, ranging from photovoltaic, photoconductive to photogating processes. These mechanisms manifest in different sensitivity and speed of photoresponse. In addition, integrating graphene-based hybrid structures with photonic platforms provides a high gain-bandwidth product, with bandwidths ≫1 GHz. In this review, we discuss the progression in the field of photodetection in 2D hybrids. We emphasize the physical mechanisms at play in diverse architectures and discuss the origin of enhanced photoresponse in hybrids. Recent developments in 2D photodetectors based on room temperature detection, photon-counting ability, integration with Si and other pressing issues, that need to be addressed for these materials to be integrated with industrial standards have been discussed.
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26
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Luo X, Peng Z, Wang Z, Dong M. Layer-by-Layer Growth of AA-Stacking MoS 2 for Tunable Broadband Phototransistors. ACS APPLIED MATERIALS & INTERFACES 2021; 13:59154-59163. [PMID: 34856097 DOI: 10.1021/acsami.1c19906] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The stacking configuration has been considered as an important additional degree of freedom to tune the physical property of layered materials, such as superconductivity and interlayer excitons. However, the facile growth of highly uniform stacking configuration is still a challenge. Herein, the AA-stacking MoS2 domains with a ratio up to 99.5% has been grown by using the modified chemical vapor deposition through introducing NaCl molecules in the confined space. By tuning the growth time, MoS2 domains would transit from an AA-stacking bilayer to an AAAAA-stacking five-layer. The epitaxial growth mechanism has been insightfully studied, revealing that the critical nucleation size of the AA-stacking bilayer is 5.0 ± 3.0 μm. Through investigation of the photoluminescence, the photoemission, especially the indirect photoexcitation, is dependent on both the stacking fashion and layer number. Furthermore, by studying the gate-tuned MoS2 phototransistors, we found a significant dependence on the stacking configuration of MoS2 of the photoexcitation and a different gate tunable photoresponse. The AAA-stacking trilayer MoS2 phototransistor delivers a photoresponse of 978.14 A W-1 at 550 nm. By correction of the external quantum efficiency with external field and illumination power density, it has been found that the photoresponse tunability is dependent on the layer number due to the strong photogating effect. This strategy provides a general avenue for the epitaxial growth of van der Waals film which will further facilitate the applications in a tunable photodetector.
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Affiliation(s)
- Xiai Luo
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China
| | - Zhenghan Peng
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China
| | - Zegao Wang
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China
| | - Mingdong Dong
- Interdisciplinary Nanoscience Center, Aarhus University, Aarhus 8000, Denmark
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27
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Supported Cu/W/Mo/Ni—Liquid Metal Catalyst with Core-Shell Structure for Photocatalytic Degradation. Catalysts 2021. [DOI: 10.3390/catal11111419] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/19/2022] Open
Abstract
Room-temperature liquid metal is a very ideal material for the design of catalytic materials. At low temperatures, the liquid metal enters the liquid state. It provides an opportunity to utilize the liquid phase in the catalysis, which is far superior to the traditional solid-phase catalyst. Aiming at the low performance and narrow application scope of the existing single-phase liquid metal catalyst, this paper proposed a type of liquid metal/metal oxide core-shell composite multi-metal catalyst. The Ga2O3 core-shell heterostructure was formed by chemical modification of liquid metals with different nano metals Cu/W/Mo/Ni, and it was applied to photocatalytic degrading organic contaminated raw liquor. The effects of different metal species on the rate of catalytic degradation were explored. The selectivity and stability of the LM/MO core-shell composite catalytic material were clarified, and it was found that the Ni-LM catalyst could degrade methylene blue and Congo red by 92% and 79%, respectively. The catalytic mechanism and charge transfer mechanism were revealed by combining the optical band gap value. Finally, we provided a theoretical basis for the further development of liquid metal photocatalytic materials in the field of new energy environments.
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28
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Yang C, Wang G, Liu M, Yao F, Li H. Mechanism, Material, Design, and Implementation Principle of Two-Dimensional Material Photodetectors. NANOMATERIALS 2021; 11:nano11102688. [PMID: 34685129 PMCID: PMC8537528 DOI: 10.3390/nano11102688] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/12/2021] [Revised: 10/06/2021] [Accepted: 10/08/2021] [Indexed: 11/16/2022]
Abstract
Two-dimensional (2D) materials may play an important role in future photodetectors due to their natural atom-thin body thickness, unique quantum confinement, and excellent electronic and photoelectric properties. Semimetallic graphene, semiconductor black phosphorus, and transition metal dichalcogenides possess flexible and adjustable bandgaps, which correspond to a wide interaction spectrum ranging from ultraviolet to terahertz. Nevertheless, their absorbance is relatively low, and it is difficult for a single material to cover a wide spectrum. Therefore, the combination of phototransistors based on 2D hybrid structures with other material platforms, such as quantum dots, organic materials, or plasma nanostructures, exhibit ultra-sensitive and broadband optical detection capabilities that cannot be ascribed to the individual constituents of the assembly. This article provides a comprehensive and systematic review of the recent research progress of 2D material photodetectors. First, the fundamental detection mechanism and key metrics of the 2D material photodetectors are introduced. Then, the latest developments in 2D material photodetectors are reviewed based on the strategies of photocurrent enhancement. Finally, a design and implementation principle for high-performance 2D material photodetectors is provided, together with the current challenges and future outlooks.
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Affiliation(s)
- Cheng Yang
- School of Physics and Electronics, Shandong Normal University, Jinan 250014, China;
- Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, NY 14260, USA;
- Correspondence: (C.Y.); (H.L.)
| | - Guangcan Wang
- School of Physics and Electronics, Shandong Normal University, Jinan 250014, China;
| | - Maomao Liu
- Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, NY 14260, USA;
| | - Fei Yao
- Department of Materials Design and Innovation, University at Buffalo, The State University of New York, Buffalo, NY 14260, USA;
| | - Huamin Li
- Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, NY 14260, USA;
- Correspondence: (C.Y.); (H.L.)
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Shao M, Zhang C, Yu J, Jiang S, Zhao X, Li Z, Lu W, Man B, Li Z. Noble metal modified ReS 2 nanocavity for surface-enhanced Raman spectroscopy (SERS) analysis. OPTICS EXPRESS 2021; 29:28664-28679. [PMID: 34614992 DOI: 10.1364/oe.435627] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/07/2021] [Accepted: 08/12/2021] [Indexed: 06/13/2023]
Abstract
The rhenium disulphide (ReS2) nanocavity-based surface enhanced Raman scattering (SERS) substrates ware fabricated on the gold-modified silicon pyramid (PSi) by thermal evaporation technology and hydrothermal method. In this work, the ReS2 nanocavity was firstly combined with metal nanostructures in order to improve the SERS properties of ReS2 materials, and the SERS response of the composite structure exhibits excellent performance in sensitivity, uniformity and repeatability. Numerical simulation reveals the synergistic effect of the ReS2 nanocavity and the plasmon resonance generated by the metal nanostructures. And the charge transfer between the metal, ReS2 and the analytes was also verified and plays an non-ignorable role. Besides, the plasmon-driven reaction for p-nitrothiophenol (PNTP) to p,p'-dimercaptobenzene (DMAB) conversion was successfully in-situ monitored. Most importantly, it is found for the first time that the SERS properties of ReS2 nanocavity-based substrates are strongly temperature dependent, and the SERS effect achieves the best performance at 45 °C. In addition, the low concentration detection of malachite green (MG) and crystal violet (CV) molecules in lake water shows its development potential in practical application.
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