1
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Noguchi R, Kobayashi M, Kawaguchi K, Yamamori W, Aido K, Lin C, Tanaka H, Kuroda K, Harasawa A, Kandyba V, Cattelan M, Barinov A, Hashimoto M, Lu D, Ochi M, Sasagawa T, Kondo T. Robust Weak Topological Insulator in the Bismuth Halide Bi_{4}Br_{2}I_{2}. PHYSICAL REVIEW LETTERS 2024; 133:086602. [PMID: 39241706 DOI: 10.1103/physrevlett.133.086602] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/17/2023] [Accepted: 07/09/2024] [Indexed: 09/09/2024]
Abstract
We apply a topological material design concept for selecting a bulk topology of 3D crystals by different van der Waals stackings of 2D topological insulator layers, and find a bismuth halide Bi_{4}Br_{2}I_{2} to be an ideal weak topological insulator (WTI) with the largest band gap (∼300 meV) among all the WTI candidates, by means of angle-resolved photoemission spectroscopy (ARPES), density functional theory (DFT) calculations, and resistivity measurements. Furthermore, we reveal that the topological surface state of a WTI is not "weak" but rather robust against external perturbations against the initial theoretical prediction by performing potassium deposition experiments. Our results vastly expand future opportunities for fundamental research and device applications with a robust WTI.
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Affiliation(s)
| | | | | | | | | | | | | | - Kenta Kuroda
- Institute for Solid State Physics (ISSP), University of Tokyo, Kashiwa, Chiba 277-8581, Japan
- International Institute for Sustainability with Knotted Chiral Meta Matter (WPI-SKCM), Hiroshima University, Higashi-hiroshima, Hiroshima 739-8526, Japan
- Graduate School of Advanced Science and Engineering, Hiroshima University, Higashi-hiroshima, Hiroshima 739-8526, Japan
| | | | | | | | | | | | | | - Masayuki Ochi
- Department of Physics, Osaka University, 1-1 Machikaneyama-cho, Toyonaka, Osaka 560-0043, Japan
- Forefront Research Center, Osaka University, 1-1 Machikaneyama-cho, Toyonaka, Osaka 560-0043, Japan
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2
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Xu YJ, Cao G, Li QY, Xue CL, Zhao WM, Wang QW, Dou LG, Du X, Meng YX, Wang YK, Gao YH, Jia ZY, Li W, Ji L, Li FS, Zhang Z, Cui P, Xing D, Li SC. Realization of monolayer ZrTe 5 topological insulators with wide band gaps. Nat Commun 2024; 15:4784. [PMID: 38839772 PMCID: PMC11153644 DOI: 10.1038/s41467-024-49197-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/24/2023] [Accepted: 05/28/2024] [Indexed: 06/07/2024] Open
Abstract
Two-dimensional topological insulators hosting the quantum spin Hall effect have application potential in dissipationless electronics. To observe the quantum spin Hall effect at elevated temperatures, a wide band gap is indispensable to efficiently suppress bulk conduction. Yet, most candidate materials exhibit narrow or even negative band gaps. Here, via elegant control of van der Waals epitaxy, we have successfully grown monolayer ZrTe5 on a bilayer graphene/SiC substrate. The epitaxial ZrTe5 monolayer crystalizes in two allotrope isomers with different intralayer alignments of ZrTe3 prisms. Our scanning tunneling microscopy/spectroscopy characterization unveils an intrinsic full band gap as large as 254 meV and one-dimensional edge states localized along the periphery of the ZrTe5 monolayer. First-principles calculations further confirm that the large band gap originates from strong spin-orbit coupling, and the edge states are topologically nontrivial. These findings thus provide a highly desirable material platform for the exploration of the high-temperature quantum spin Hall effect.
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Affiliation(s)
- Yong-Jie Xu
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China
| | - Guohua Cao
- International Center for Quantum Design of Functional Materials (ICQD), University of Science and Technology of China, Hefei, China
| | - Qi-Yuan Li
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China
| | - Cheng-Long Xue
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China
| | - Wei-Min Zhao
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China
| | - Qi-Wei Wang
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China
| | - Li-Guo Dou
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China
| | - Xuan Du
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China
| | - Yu-Xin Meng
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China
| | - Yuan-Kun Wang
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China
| | - Yu-Hang Gao
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China
| | - Zhen-Yu Jia
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China
| | - Wei Li
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
| | - Lianlian Ji
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
| | - Fang-Sen Li
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
| | - Zhenyu Zhang
- International Center for Quantum Design of Functional Materials (ICQD), University of Science and Technology of China, Hefei, China
- Hefei National Laboratory, Hefei, China
| | - Ping Cui
- International Center for Quantum Design of Functional Materials (ICQD), University of Science and Technology of China, Hefei, China.
- Hefei National Laboratory, Hefei, China.
| | - Dingyu Xing
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Shao-Chun Li
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, China.
- Hefei National Laboratory, Hefei, China.
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
- Jiangsu Provincial Key Laboratory for Nanotechnology, Nanjing University, Nanjing, China.
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3
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Gong Z, Lai X, Miao W, Zhong J, Shi Z, Shen H, Liu X, Li Q, Yang M, Zhuang J, Du Y. Br-Vacancies Induced Variable Ranging Hopping Conduction in High-Order Topological Insulator Bi 4Br 4. SMALL METHODS 2024:e2400517. [PMID: 38763921 DOI: 10.1002/smtd.202400517] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/11/2024] [Revised: 04/30/2024] [Indexed: 05/21/2024]
Abstract
The defects have a remarkable influence on the electronic structures and the electric transport behaviors of the matter, providing the additional means to engineering their physical properties. In this work, a comprehensive study on the effect of Br-vacancies on the electronic structures and transport behaviors in the high-order topological insulator Bi4Br4 is performed by the combined techniques of the scanning tunneling microscopy (STM), angle-resolved photoemission spectroscopy (ARPES), and physical properties measurement system along with the first-principle calculations. The STM results show the defects on the cleaved surface of a single crystal and reveal that the defects are correlated to the Br-vacancies with the support of the simulated STM images. The role of the Br-vacancies in the modulation of the band structures has been identified by ARPES spectra and the calculated energy-momentum dispersion. The relationship between the Br-vacancies and the semiconducting-like transport behaviors at low temperature has been established, implying a Mott variable ranging hopping conduction in Bi4Br4. The work not only resolves the unclear transport behaviors in this matter, but also paves a way to modulate the electric conduction path by the defects engineering.
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Affiliation(s)
- Zixin Gong
- School of Physics, Beihang University, Haidian District, Beijing, 100191, China
| | - Xingyu Lai
- School of Physics, Beihang University, Haidian District, Beijing, 100191, China
| | - Wenjing Miao
- School of Physics, Beihang University, Haidian District, Beijing, 100191, China
| | - Jingyuan Zhong
- School of Physics, Beihang University, Haidian District, Beijing, 100191, China
| | - Zhijian Shi
- School of Physics, Beihang University, Haidian District, Beijing, 100191, China
| | - Huayi Shen
- School of Physics, Beihang University, Haidian District, Beijing, 100191, China
| | - Xinqi Liu
- School of Physics, Beihang University, Haidian District, Beijing, 100191, China
| | - Qiyi Li
- School of Physics, Beihang University, Haidian District, Beijing, 100191, China
| | - Ming Yang
- School of Physics, Beihang University, Haidian District, Beijing, 100191, China
| | - Jincheng Zhuang
- School of Physics, Beihang University, Haidian District, Beijing, 100191, China
| | - Yi Du
- School of Physics, Beihang University, Haidian District, Beijing, 100191, China
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4
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Zhong J, Yang M, Wang J, Li Y, Liu C, Mu D, Liu Y, Cheng N, Shi Z, Yang L, Zhuang J, Du Y, Hao W. Observation of Anomalous Planar Hall Effect Induced by One-Dimensional Weak Antilocalization. ACS NANO 2024; 18:4343-4351. [PMID: 38277336 DOI: 10.1021/acsnano.3c10120] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/28/2024]
Abstract
The confinement of electrons in one-dimensional (1D) space highlights the prominence of the role of electron interactions or correlations, leading to a variety of fascinating physical phenomena. The quasi-1D electron states can exhibit a unique spin texture under spin-orbit interaction (SOI) and thus could generate a robust spin current by forbidden electron backscattering. Direct detection of such 1D spin or SOI information, however, is challenging due to complicated techniques. Here, we identify an anomalous planar Hall effect (APHE) in the magnetotransport of quasi-1D van der Waals (vdW) topological materials as exemplified by Bi4Br4, which arises from the quantum interference correction of 1D weak antilocalization (WAL) to the ordinary planar Hall effect and demonstrates a deviation from the usual sine and cosine curves. The occurrence of 1D WAL is correlated to the line-shape Fermi surface and persistent spin texture of (100) topological surface states of Bi4Br4, as revealed by both our angle-resolved photoemission spectroscopy and first-principles calculations. By generalizing the observation of APHE to other non-vdW bulk materials, this work provides a possible characteristic of magnetotransport for identifying the spin/SOI information and quantum interference behavior of 1D states in 3D topological material.
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Affiliation(s)
- Jingyuan Zhong
- School of Physics, Beihang University, Haidian District, Beijing 100191, China
| | - Ming Yang
- School of Physics, Beihang University, Haidian District, Beijing 100191, China
| | - Jianfeng Wang
- School of Physics, Beihang University, Haidian District, Beijing 100191, China
| | - Yaqi Li
- School of Physics, Beihang University, Haidian District, Beijing 100191, China
| | - Chen Liu
- Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
| | - Dan Mu
- Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, China
| | - Yundan Liu
- Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, China
| | - Ningyan Cheng
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
| | - Zhixiang Shi
- School of Physics and Key Laboratory of the Ministry of Education, Southeast University, Nanjing 211189, People's Republic of China
| | - Lexian Yang
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Jincheng Zhuang
- School of Physics, Beihang University, Haidian District, Beijing 100191, China
- Centre of Quantum and Matter Sciences, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191, China
| | - Yi Du
- School of Physics, Beihang University, Haidian District, Beijing 100191, China
- Centre of Quantum and Matter Sciences, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191, China
| | - Weichang Hao
- School of Physics, Beihang University, Haidian District, Beijing 100191, China
- Centre of Quantum and Matter Sciences, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191, China
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5
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Xu L, Li Y, Fang Y, Zheng H, Shi W, Chen C, Pei D, Lu D, Hashimoto M, Wang M, Yang L, Feng X, Zhang H, Huang F, Xue Q, He K, Liu Z, Chen Y. Topology Hierarchy of Transition Metal Dichalcogenides Built from Quantum Spin Hall Layers. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2300227. [PMID: 36870326 DOI: 10.1002/adma.202300227] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/08/2023] [Revised: 02/22/2023] [Indexed: 05/26/2023]
Abstract
The evolution of the physical properties of 2D material from monolayer limit to the bulk reveals unique consequences from dimension confinement and provides a distinct tuning knob for applications. Monolayer 1T'-phase transition metal dichalcogenides (1T'-TMDs) with ubiquitous quantum spin Hall (QSH) states are ideal 2D building blocks of various 3D topological phases. However, the stacking geometry has been previously limited to the bulk 1T'-WTe2 type. Here, the novel 2M-TMDs consisting of translationally stacked 1T'-monolayers are introduced as promising material platforms with tunable inverted bandgaps and interlayer coupling. By performing advanced polarization-dependent angle-resolved photoemission spectroscopy as well as first-principles calculations on the electronic structure of 2M-TMDs, a topology hierarchy is revealed: 2M-WSe2 , MoS2, and MoSe2 are weak topological insulators (WTIs), whereas 2M-WS2 is a strong topological insulator (STI). Further demonstration of topological phase transitions by tunning interlayer distance indicates that band inversion amplitude and interlayer coupling jointly determine different topological states in 2M-TMDs. It is proposed that 2M-TMDs are parent compounds of various exotic phases including topological superconductors and promise great application potentials in quantum electronics due to their flexibility in patterning with 2D materials.
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Affiliation(s)
- Lixuan Xu
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, 100084, P. R. China
| | - Yiwei Li
- Institute for Advanced Studies (IAS), Wuhan University, Wuhan, 430072, P. R. China
| | - Yuqiang Fang
- State Key Laboratory of Rare Earth Materials Chemistry and Applications College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Huijun Zheng
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, P. R. China
- ShanghaiTech Laboratory for Topological Physics, Shanghai, 201210, P. R. China
| | - Wujun Shi
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, P. R. China
- Center for Transformative Science, ShanghaiTech University, Shanghai, 201210, P. R. China
- Shanghai high repetition rate XFEL and extreme light facility (SHINE), ShanghaiTech University, Shanghai, 201210, P. R. China
| | - Cheng Chen
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Ding Pei
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, P. R. China
- ShanghaiTech Laboratory for Topological Physics, Shanghai, 201210, P. R. China
| | - Donghui Lu
- Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Makoto Hashimoto
- Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Meixiao Wang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, P. R. China
- ShanghaiTech Laboratory for Topological Physics, Shanghai, 201210, P. R. China
| | - Lexian Yang
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, 100084, P. R. China
| | - Xiao Feng
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, 100084, P. R. China
| | - Haijun Zhang
- National Laboratory of Solid State Microstructures and School of Physics, Nanjing University, Nanjing, 210093, P. R. China
| | - Fuqiang Huang
- State Key Laboratory of Rare Earth Materials Chemistry and Applications College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Qikun Xue
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, 100084, P. R. China
| | - Ke He
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, 100084, P. R. China
| | - Zhongkai Liu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, P. R. China
- ShanghaiTech Laboratory for Topological Physics, Shanghai, 201210, P. R. China
| | - Yulin Chen
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, P. R. China
- ShanghaiTech Laboratory for Topological Physics, Shanghai, 201210, P. R. China
- Clarendon LaboratoryDepartment of Physics, University of Oxford, Oxford, OX1 3PU, UK
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6
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Han J, Mao P, Chen H, Yin JX, Wang M, Chen D, Li Y, Zheng J, Zhang X, Ma D, Ma Q, Yu ZM, Zhou J, Liu CC, Wang Y, Jia S, Weng Y, Hasan MZ, Xiao W, Yao Y. Optical bulk-boundary dichotomy in a quantum spin Hall insulator. Sci Bull (Beijing) 2023:S2095-9273(23)00074-9. [PMID: 36740530 DOI: 10.1016/j.scib.2023.01.038] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/20/2022] [Revised: 11/23/2022] [Accepted: 01/23/2023] [Indexed: 02/05/2023]
Abstract
The bulk-boundary correspondence is a critical concept in topological quantum materials. For instance, a quantum spin Hall insulator features a bulk insulating gap with gapless helical boundary states protected by the underlying Z2 topology. However, the bulk-boundary dichotomy and distinction are rarely explored in optical experiments, which can provide unique information about topological charge carriers beyond transport and electronic spectroscopy techniques. Here, we utilize mid-infrared absorption micro-spectroscopy and pump-probe micro-spectroscopy to elucidate the bulk-boundary optical responses of Bi4Br4, a recently discovered room-temperature quantum spin Hall insulator. Benefiting from the low energy of infrared photons and the high spatial resolution, we unambiguously resolve a strong absorption from the boundary states while the bulk absorption is suppressed by its insulating gap. Moreover, the boundary absorption exhibits strong polarization anisotropy, consistent with the one-dimensional nature of the topological boundary states. Our infrared pump-probe microscopy further measures a substantially increased carrier lifetime for the boundary states, which reaches one nanosecond scale. The nanosecond lifetime is about one to two orders longer than that of most topological materials and can be attributed to the linear dispersion nature of the helical boundary states. Our findings demonstrate the optical bulk-boundary dichotomy in a topological material and provide a proof-of-principal methodology for studying topological optoelectronics.
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Affiliation(s)
- Junfeng Han
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, China; Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Pengcheng Mao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Analysis & Testing Center, Beijing Institute of Technology, Beijing 100081, China
| | - Hailong Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; Songshan Lake Materials Laboratory, Dongguan 523808, China; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Jia-Xin Yin
- Laboratory for Topological Quantum Matter and Advanced Spectroscopy (B7), Department of Physics, Princeton University, Princeton NJ 08544, USA
| | - Maoyuan Wang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Department of Physics, Xiamen University, Xiamen 361005, China
| | - Dongyun Chen
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Yongkai Li
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, China; Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Jingchuan Zheng
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, China; Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Xu Zhang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, China; Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Dashuai Ma
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Department of Physics, Chongqing University, Chongqing 400044, China
| | - Qiong Ma
- Department of Physics, Boston College, Chestnut Hill MA 02467, USA
| | - Zhi-Ming Yu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, China; Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Jinjian Zhou
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, China; Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Cheng-Cheng Liu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, China; Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Yeliang Wang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Shuang Jia
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Yuxiang Weng
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - M Zahid Hasan
- Laboratory for Topological Quantum Matter and Advanced Spectroscopy (B7), Department of Physics, Princeton University, Princeton NJ 08544, USA
| | - Wende Xiao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, China; Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China.
| | - Yugui Yao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, China; Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China.
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7
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Chi L, Nogami J, Singh CV. Phase Transformation-Induced Quantum Dot States on the Bi/Si(111) Surface. ACS APPLIED MATERIALS & INTERFACES 2022; 14:36217-36226. [PMID: 35900138 DOI: 10.1021/acsami.2c07015] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Nanopatterns at near atomic dimensions with controllable quantum dot states (QDSs) are promising candidates for the continued downscaling of electronic devices. Herein, we report a phase transition-induced QD system achieved on the √3 × √3-Bi/Si(111) surface reconstruction, which points the way to a novel strategy on QDS implementation. Combining scanning tunneling microscopy, scanning tunneling spectroscopy, and density functional theory (DFT) calculations, the structure, energy dispersion, and size effect on band gap of the QDs are measured and verified. As-created QDs can be manipulated with a dot size down to 2 nm via Bi phase transformation, which, in turn, is triggered by thermal annealing at 700 K. The transition mechanism is also supported by our DFT calculations, and an empirical analytical model is developed to predict the transformation kinetics.
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Affiliation(s)
- Longxing Chi
- Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto, Ontario M5S 3E4, Canada
| | - Jun Nogami
- Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto, Ontario M5S 3E4, Canada
| | - Chandra Veer Singh
- Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto, Ontario M5S 3E4, Canada
- Department of Mechanical and Industrial Engineering, University of Toronto, 5 King's College Road, Toronto, Ontario M5S 3G8, Canada
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8
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Yang M, Liu Y, Zhou W, Liu C, Mu D, Liu Y, Wang J, Hao W, Li J, Zhong J, Du Y, Zhuang J. Large-Gap Quantum Spin Hall State and Temperature-Induced Lifshitz Transition in Bi 4Br 4. ACS NANO 2022; 16:3036-3044. [PMID: 35049268 DOI: 10.1021/acsnano.1c10539] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Searching for quantum spin Hall insulators with large fully opened energy gap to overcome the thermal disturbance at room temperature has attracted tremendous attention because of the robustness of one-dimensional (1D) spin-momentum locked topological edge states in the practical applications of electronic devices and spintronics. Here, we report the investigation of topological nature of monolayer Bi4Br4 by the techniques of angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy. The possible topological nontriviality of 1D edge state integrals within the large energy gap (∼0.2 eV) is revealed by the first-principle calculations. The ARPES measurements at different temperatures show a temperature-induced Lifshitz transition, corresponding to the resistivity anomaly evoked by the chemical potential shift. The connection between the emergency of superconductivity and the Lifshitz transition is discussed.
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Affiliation(s)
- Ming Yang
- School of Physics and BUAA-UOW Joint Research Centre, Beihang University, Haidian District, Beijing 100191, China
| | - Yundan Liu
- Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, China
| | - Wei Zhou
- School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu, 215500, China
| | - Chen Liu
- Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Dan Mu
- Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, China
| | - Yani Liu
- Institute for Superconducting and Electronic Materials, Australian Institute for Innovative Materials, University of Wollongong, Wollongong, New South Wales 2500, Australia
| | - Jiaou Wang
- Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Weichang Hao
- School of Physics and BUAA-UOW Joint Research Centre, Beihang University, Haidian District, Beijing 100191, China
| | - Jin Li
- Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, China
| | - Jianxin Zhong
- Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, China
| | - Yi Du
- School of Physics and BUAA-UOW Joint Research Centre, Beihang University, Haidian District, Beijing 100191, China
- Institute for Superconducting and Electronic Materials, Australian Institute for Innovative Materials, University of Wollongong, Wollongong, New South Wales 2500, Australia
| | - Jincheng Zhuang
- School of Physics and BUAA-UOW Joint Research Centre, Beihang University, Haidian District, Beijing 100191, China
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9
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Peng X, Zhang X, Dong X, Ma D, Chen D, Li Y, Li J, Han J, Wang Z, Liu CC, Zhou J, Xiao W, Yao Y. Observation of Topological Edge States on α-Bi 4Br 4 Nanowires Grown on TiSe 2 Substrates. J Phys Chem Lett 2021; 12:10465-10471. [PMID: 34672593 DOI: 10.1021/acs.jpclett.1c02586] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
A time-reversal invariant two-dimensional (2D) topological insulator (TI) is characterized by the gapless helical edge states propagating along the perimeter of the system. However, the small band gap in the 2D TIs discovered so far hinders their applications. Recently, we predicted that single-layer Bi4Br4 is a 2D TI with a remarkable band gap and that α-Bi4Br4 crystals can host topological edge states at the step edges. Here we report the growth of α-Bi4Br4 nanowires with (102)-oriented top surfaces on the TiSe2 substrates and the direct observation of the predicted topological edge states at the step edges of the nanowires using scanning tunneling microscopy. The coupling between the edge states leads to the formation of surface states at the (102) top surfaces of the nanowires. Our work demonstrates the existence of topological edge states in α-Bi4Br4 and paves the way for developing α-Bi4Br4-based devices for a high-temperature quantum spin Hall effect.
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Affiliation(s)
- Xianglin Peng
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Xu Zhang
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Xu Dong
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Dashuai Ma
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Dongyun Chen
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Yongkai Li
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Ji Li
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Junfeng Han
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, China
| | - Zhiwei Wang
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, China
| | - Cheng-Cheng Liu
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, China
| | - Jinjian Zhou
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, China
| | - Wende Xiao
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, China
| | - Yugui Yao
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, China
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