1
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Liu Y, Yan Z, Bai R, Zhang X, Cheng X, Ren Y, Zhu Y, Zhou R, Ma H, Jiang C. Heterostrain-Induced Zeeman-like Splitting in h-BN-Encapsulated Bilayer WSe 2. NANO LETTERS 2024; 24:10858-10864. [PMID: 39167714 DOI: 10.1021/acs.nanolett.4c02374] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/23/2024]
Abstract
Heterostrain is predicted to induce exceptionally rich physics in atomically thin two-dimensional structures by modifying the symmetry and optical selection rules. In this work, we introduce heterostrain into WSe2 bilayers by combining h-BN encapsulation and high-temperature vacuum annealing. Nonvolatile heterostrain gives rise to a Zeeman-like splitting associated with the elliptically polarized optical emission of interlayer K-K excitons. Further manipulation of the interlayer exciton emission in an external magnetic field reveals that the Zeeman-like splitting cannot be eliminated even in a magnetic field of up to ±6 T. We propose a microscopic picture with respect to the layer and valley pseudospin to interpret the results. Our findings imply an intriguing way to encode binary information with the layer pseudospin enabled by the heterostrain and open a venue for manipulating the layer pseudospin with heterostrain engineering, optical pseudospin injection, and an external magnetic field.
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Affiliation(s)
- Yulun Liu
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, China
| | - Zuowei Yan
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, China
| | - Ruixue Bai
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, China
| | - Xilin Zhang
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, China
| | - Xiaoyu Cheng
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, China
| | - Yanbo Ren
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, China
| | - Yaojie Zhu
- School of Physical Science and Technology, Tiangong University, Tianjin 300387, China
| | - Rui Zhou
- School of Physical Science and Technology, Tiangong University, Tianjin 300387, China
| | - Hui Ma
- School of Physical Science and Technology, Tiangong University, Tianjin 300387, China
| | - Chongyun Jiang
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, China
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2
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Kim H, Adinolfi V, Lee SH. Photoluminescence of Chemically and Electrically Doped Two-Dimensional Monolayer Semiconductors. MATERIALS (BASEL, SWITZERLAND) 2024; 17:3962. [PMID: 39203138 PMCID: PMC11356262 DOI: 10.3390/ma17163962] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/16/2024] [Revised: 08/05/2024] [Accepted: 08/07/2024] [Indexed: 09/03/2024]
Abstract
Two-dimensional (2D) transition metal dichalcogenide (TMDC) monolayers exhibit unique physical properties, such as self-terminating surfaces, a direct bandgap, and near-unity photoluminescence (PL) quantum yield (QY), which make them attractive for electronic and optoelectronic applications. Surface charge transfer has been widely used as a technique to control the concentration of free charge in 2D semiconductors, but its estimation and the impact on the optoelectronic properties of the material remain a challenge. In this work, we investigate the optical properties of a WS2 monolayer under three different doping approaches: benzyl viologen (BV), potassium (K), and electrostatic doping. Owing to the excitonic nature of 2D TMDC monolayers, the PL of the doped WS2 monolayer exhibits redshift and a decrease in intensity, which is evidenced by the increase in trion population. The electron concentrations of 3.79×1013 cm-2, 6.21×1013 cm-2, and 3.12×1012 cm-2 were measured for WS2 monolayers doped with BV, K, and electrostatic doping, respectively. PL offers a direct and versatile approach to probe the doping effect, allowing for the measurement of carrier concentration in 2D monolayer semiconductors.
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Affiliation(s)
- Hyungjin Kim
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Valerio Adinolfi
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA;
| | - Sin-Hyung Lee
- Department of Intelligent Semiconductor Engineering, School of Advanced Fusion Studies, University of Seoul, Seoul 02504, Republic of Korea
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3
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Guo L, Hu S, Gu X, Zhang R, Wang K, Yan W, Sun X. Emerging Spintronic Materials and Functionalities. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2301854. [PMID: 37309258 DOI: 10.1002/adma.202301854] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/27/2023] [Revised: 06/01/2023] [Indexed: 06/14/2023]
Abstract
The explosive growth of the information era has put forward urgent requirements for ultrahigh-speed and extremely efficient computations. In direct contrary to charge-based computations, spintronics aims to use spins as information carriers for data storage, transmission, and decoding, to help fully realize electronic device miniaturization and high integration for next-generation computing technologies. Currently, many novel spintronic materials have been developed with unique properties and multifunctionalities, including organic semiconductors (OSCs), organic-inorganic hybrid perovskites (OIHPs), and 2D materials (2DMs). These materials are useful to fulfill the demand for developing diverse and advanced spintronic devices. Herein, these promising materials are systematically reviewed for advanced spintronic applications. Due to the distinct chemical and physical structures of OSCs, OIHPs, and 2DMs, their spintronic properties (spin transport and spin manipulation) are discussed separately. In addition, some multifunctionalities due to photoelectric and chiral-induced spin selectivity (CISS) are overviewed, including the spin-filter effect, spin-photovoltaics, spin-light emitting devices, and spin-transistor functions. Subsequently, challenges and future perspectives of using these multifunctional materials for the development of advanced spintronics are presented.
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Affiliation(s)
- Lidan Guo
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Shunhua Hu
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Xianrong Gu
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Rui Zhang
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
| | - Kai Wang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing, 100044, P. R. China
| | - Wenjing Yan
- School of Physics and Astronomy, University of Nottingham, University Park, Nottingham, NG9 2RD, UK
| | - Xiangnan Sun
- Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- School of Material Science and Engineering, Zhengzhou University, Zhengzhou, 450001, P. R. China
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4
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Cai CS, Lai WY, Liu PH, Chou TC, Liu RY, Lin CM, Gwo S, Hsu WT. Ultralow Auger-Assisted Interlayer Exciton Annihilation in WS 2/WSe 2 Moiré Heterobilayers. NANO LETTERS 2024; 24:2773-2781. [PMID: 38285707 PMCID: PMC10921466 DOI: 10.1021/acs.nanolett.3c04688] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/01/2023] [Revised: 01/22/2024] [Accepted: 01/23/2024] [Indexed: 01/31/2024]
Abstract
Transition metal dichalcogenide (TMD) heterobilayers have emerged as a promising platform for exploring solid-state quantum simulators and many-body quantum phenomena. Their type II band alignment, combined with the moiré superlattice, inevitably leads to nontrivial exciton interactions and dynamics. Here, we unveil the distinct Auger annihilation processes for delocalized interlayer excitons in WS2/WSe2 moiré heterobilayers. By fitting the characteristic efficiency droop and bimolecular recombination rate, we quantitatively determine an ultralow Auger coefficient of 1.3 × 10-5 cm2 s-1, which is >100-fold smaller than that of excitons in TMD monolayers. In addition, we reveal selective exciton upconversion into the WSe2 layer, which highlights the significance of intralayer electron Coulomb interactions in dictating the microscopic scattering pathways. The distinct Auger processes arising from spatial electron-hole separation have important implications for TMD heterobilayers while endowing interlayer excitons and their strongly correlated states with unique layer degrees of freedom.
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Affiliation(s)
- Cheng-Syuan Cai
- Department
of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan
- National
Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
| | - Wei-Yan Lai
- Department
of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Po-Hsuan Liu
- Department
of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Tzu-Chieh Chou
- Department
of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan
- National
Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
| | - Ro-Ya Liu
- National
Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
| | - Chih-Ming Lin
- Department
of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Shangjr Gwo
- Department
of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Wei-Ting Hsu
- Department
of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan
- National
Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
- Research
Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
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5
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Kang M, Kim SJ, Joo H, Koo Y, Lee H, Lee HS, Suh YD, Park KD. Nanoscale Manipulation of Exciton-Trion Interconversion in a MoSe 2 Monolayer via Tip-Enhanced Cavity-Spectroscopy. NANO LETTERS 2024; 24:279-286. [PMID: 38117534 DOI: 10.1021/acs.nanolett.3c03920] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/21/2023]
Abstract
Emerging light-matter interactions in metal-semiconductor hybrid platforms have attracted considerable attention due to their potential applications in optoelectronic devices. Here, we demonstrate plasmon-induced near-field manipulation of trionic responses in a MoSe2 monolayer using tip-enhanced cavity-spectroscopy (TECS). The surface plasmon-polariton mode on the Au nanowire can locally manipulate the exciton (X0) and trion (X-) populations of MoSe2. Furthermore, we reveal that surface charges significantly influence the emission and interconversion processes of X0 and X-. In the TECS configuration, the localized plasmon significantly affects the distributions of X0 and X- due to the modified radiative decay rate. Additionally, within the TECS cavity, the electric doping effect and hot electron generation enable dynamic interconversion between X0 and X- at the nanoscale. This work advances our understanding of plasmon-exciton-hot electron interactions in metal-semiconductor-metal hybrid structures, providing a foundation for an optimal trion-based nano-optoelectronic platform.
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Affiliation(s)
- Mingu Kang
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Su Jin Kim
- Department of Physics, Research Institute for Nanoscale Science and Technology, Chungbuk National University, Cheongju 28644, Republic of Korea
| | - Huitae Joo
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Yeonjeong Koo
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Hyeongwoo Lee
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Hyun Seok Lee
- Department of Physics, Research Institute for Nanoscale Science and Technology, Chungbuk National University, Cheongju 28644, Republic of Korea
| | - Yung Doug Suh
- Department of Chemistry and School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919 Republic of Korea
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
| | - Kyoung-Duck Park
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
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6
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Tran TT, Lee Y, Roy S, Tran TU, Kim Y, Taniguchi T, Watanabe K, Milošević MV, Lim SC, Chaves A, Jang JI, Kim J. Synergetic Enhancement of Quantum Yield and Exciton Lifetime of Monolayer WS 2 by Proximal Metal Plate and Negative Electric Bias. ACS NANO 2024; 18:220-228. [PMID: 38127273 DOI: 10.1021/acsnano.3c05667] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/23/2023]
Abstract
The efficiency of light emission is a critical performance factor for monolayer transition metal dichalcogenides (1L-TMDs) for photonic applications. While various methods have been studied to compensate for lattice defects to improve the quantum yield (QY) of 1L-TMDs, exciton-exciton annihilation (EEA) is still a major nonradiative decay channel for excitons at high exciton densities. Here, we demonstrate that the combined use of a proximal Au plate and a negative electric gate bias (NEGB) for 1L-WS2 provides a dramatic enhancement of the exciton lifetime at high exciton densities with the corresponding QY enhanced by 30 times and the EEA rate constant decreased by 80 times. The suppression of EEA by NEGB is attributed to the reduction of the defect-assisted EEA process, which we also explain with our theoretical model. Our results provide a synergetic solution to cope with EEA to realize high-intensity 2D light emitters using TMDs.
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Affiliation(s)
- Trang Thu Tran
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Yongjun Lee
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Shrawan Roy
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Thi Uyen Tran
- Department of Smart Fab. Technology, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Youngbum Kim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Milorad V Milošević
- Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
- Instituto de Física, Universidade Federal de Mato Grosso, Cuiabá, Mato Grosso 78060-900, Brazil
| | - Seong Chu Lim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Department of Smart Fab. Technology, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Andrey Chaves
- Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
- Departamento de Física, Universidade Federal do Ceará, Campus do Pici, C.P. 6030, 60455-900 Fortaleza, Ceará, Brazil
| | - Joon I Jang
- Department of Physics, Sogang University, Seoul 04107, Republic of Korea
| | - Jeongyong Kim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
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7
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Cai Q, Li H, Dong W, Jie G. Versatile photoelectrochemical biosensor based on AIS/ZnS QDs sensitized-WSe 2 nanoflowers coupled with DNA nanostructure probe for"On-Off"assays of TNF-α and MTase. Biosens Bioelectron 2023; 241:115704. [PMID: 37748401 DOI: 10.1016/j.bios.2023.115704] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/31/2023] [Revised: 09/12/2023] [Accepted: 09/20/2023] [Indexed: 09/27/2023]
Abstract
Herein, a novel multifunctional photoelectrochemical (PEC) biosensor based on AgInS2 (AIS)/ZnS quantum dots (QDs) sensitized-WSe2 nanoflowers and DNA nanostructure signal probe was designed to achieve ultra-sensitive "On-Off" detection of human tumor necrosis factor α (TNF-α) and methylase Dam MTase (MTase). AIS/ZnS QDs as an excellent photosensitive material was found to match WSe2 in energy level for the first time, and the photocurrent signal after sensitization was 65 times that of WSe2 nanoflowers and 17.9 times that of AIS/ZnS QDs. Moreover, abundant AIS/ZnS QDs were loaded on the TiO2 nanoparticles with good conductivity by DNA to fabricate a multifunctional probe, which can not only amplify signal but also specifically recognize target. When target TNF-α was present, the AIS/ZnS QDs signal probe was attached to the WSe2 nanoflowers-modified electrode through binding to aptamer, and the amplified PEC signal was generated for "on" assay of TNF-α. Furthermore, Dam MTase as second target induced methylation of hairpin HDam, so it is cleaved by the endonuclease DpnI, resulting in the shedding of AIS/ZnS QDs signal probe for signal "off" detection of MTase. This work opened a new photosensitized probe and developed a promising PEC biosensor for dual-targets assay. By programming the DNA nanostructure, the biosensor can detect versatile targets in a simple and sensitive method, which has good practical application value in human serum.
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Affiliation(s)
- Qianqian Cai
- Key Laboratory of Optic-electric Sensing and Analytical Chemistry for Life Science, MOE, College of Chemistry and Molecular Engineering. Qingdao University of Science and Technology, Qingdao, 266042, PR China
| | - Hongkun Li
- Key Laboratory of Optic-electric Sensing and Analytical Chemistry for Life Science, MOE, College of Chemistry and Molecular Engineering. Qingdao University of Science and Technology, Qingdao, 266042, PR China
| | - Wenshuai Dong
- Key Laboratory of Optic-electric Sensing and Analytical Chemistry for Life Science, MOE, College of Chemistry and Molecular Engineering. Qingdao University of Science and Technology, Qingdao, 266042, PR China
| | - Guifen Jie
- Key Laboratory of Optic-electric Sensing and Analytical Chemistry for Life Science, MOE, College of Chemistry and Molecular Engineering. Qingdao University of Science and Technology, Qingdao, 266042, PR China.
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8
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Rahman IKMR, Uddin SZ, Yeh M, Higashitarumizu N, Kim J, Li Q, Lee H, Lee K, Kim H, Park C, Lim J, Ager JW, Javey A. Gate Controlled Excitonic Emission in Quantum Dot Thin Films. NANO LETTERS 2023; 23:10164-10170. [PMID: 37934978 DOI: 10.1021/acs.nanolett.3c02456] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/09/2023]
Abstract
Formation of charged trions is detrimental to the luminescence quantum efficiency of colloidal quantum dot (QD) thin films as they predominantly undergo nonradiative recombination. In this regard, control of charged trion formation is of interest for both fundamental characterization of the quasi-particles and performance optimization. Using CdSe/CdS QDs as a prototypical material system, here we demonstrate a metal-oxide-semiconductor capacitor based on QD thin films for studying the background charge effect on the luminescence efficiency and lifetime. The concentration ratio of the charged and neutral quasiparticles in the QDs is reversibly controlled by applying a gate voltage, while simultaneous steady-state and time-resolved photoluminescence measurements are performed. Notably, the photoluminescence intensity is modulated by up to 2 orders of magnitude with a corresponding change in the effective lifetime. In addition, chip-scale modulation of brightness is demonstrated, where the photoluminescence is effectively turned on and off by the gate, highlighting potential applications in voltage-controlled electrochromics.
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Affiliation(s)
- I K M Reaz Rahman
- Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Shiekh Zia Uddin
- Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Matthew Yeh
- Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Naoki Higashitarumizu
- Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Jongchan Kim
- Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Quanwei Li
- Department of Chemistry, University of California, Berkeley, California 94720, United States
- Kavli Energy Nanoscience Institute at Berkeley, Berkeley, California 94720, United States
| | - Hyeonjun Lee
- Department of Energy Science and Centre for Artificial Atoms, Sungkyunkwan University, Natural Sciences Campus, Seobu-ro 2066, Jangan-gu, Suwon 16419, Gyeonggi-do, Republic of Korea
| | - Kyuho Lee
- Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - HoYeon Kim
- Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Cheolmin Park
- Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Jaehoon Lim
- Department of Energy Science and Centre for Artificial Atoms, Sungkyunkwan University, Natural Sciences Campus, Seobu-ro 2066, Jangan-gu, Suwon 16419, Gyeonggi-do, Republic of Korea
| | - Joel W Ager
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Materials Science and Engineering, University of California, Berkeley, California 94720, United States
| | - Ali Javey
- Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
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9
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Higashitarumizu N, Uddin SZ, Weinberg D, Azar NS, Reaz Rahman IKM, Wang V, Crozier KB, Rabani E, Javey A. Anomalous thickness dependence of photoluminescence quantum yield in black phosphorous. NATURE NANOTECHNOLOGY 2023; 18:507-513. [PMID: 36879126 DOI: 10.1038/s41565-023-01335-0] [Citation(s) in RCA: 12] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2022] [Accepted: 01/31/2023] [Indexed: 05/21/2023]
Abstract
Black phosphorus has emerged as a unique optoelectronic material, exhibiting tunable and high device performance from mid-infrared to visible wavelengths. Understanding the photophysics of this system is of interest to further advance device technologies based on it. Here we report the thickness dependence of the photoluminescence quantum yield at room temperature in black phosphorus while measuring the various radiative and non-radiative recombination rates. As the thickness decreases from bulk to ~4 nm, a drop in the photoluminescence quantum yield is initially observed due to enhanced surface carrier recombination, followed by an unexpectedly sharp increase in photoluminescence quantum yield with further thickness scaling, with an average value of ~30% for monolayers. This trend arises from the free-carrier to excitonic transition in black phosphorus thin films, and differs from the behaviour of conventional semiconductors, where photoluminescence quantum yield monotonically deteriorates with decreasing thickness. Furthermore, we find that the surface carrier recombination velocity of black phosphorus is two orders of magnitude lower than the lowest value reported in the literature for any semiconductor with or without passivation; this is due to the presence of self-terminated surface bonds in black phosphorus.
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Affiliation(s)
- Naoki Higashitarumizu
- Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Shiekh Zia Uddin
- Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Daniel Weinberg
- Department of Chemistry, University of California, Berkeley, Berkeley, CA, USA
| | | | - I K M Reaz Rahman
- Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Vivian Wang
- Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Kenneth B Crozier
- School of Physics, University of Melbourne, Melbourne, Victoria, Australia
- Department of Electrical and Electronic Engineering, University of Melbourne, Parkville, Victoria, Australia
- Australian Research Council (ARC) Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Melbourne, Parkville, Victoria, Australia
| | - Eran Rabani
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Department of Chemistry, University of California, Berkeley, Berkeley, CA, USA
- The Raymond and Beverly Sackler Center of Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv, Israel
| | - Ali Javey
- Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
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10
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Tagarelli F, Lopriore E, Erkensten D, Perea-Causín R, Brem S, Hagel J, Sun Z, Pasquale G, Watanabe K, Taniguchi T, Malic E, Kis A. Electrical control of hybrid exciton transport in a van der Waals heterostructure. NATURE PHOTONICS 2023; 17:615-621. [PMID: 37426431 PMCID: PMC10322698 DOI: 10.1038/s41566-023-01198-w] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/08/2022] [Accepted: 03/10/2023] [Indexed: 07/11/2023]
Abstract
Interactions between out-of-plane dipoles in bosonic gases enable the long-range propagation of excitons. The lack of direct control over collective dipolar properties has so far limited the degrees of tunability and the microscopic understanding of exciton transport. In this work we modulate the layer hybridization and interplay between many-body interactions of excitons in a van der Waals heterostructure with an applied vertical electric field. By performing spatiotemporally resolved measurements supported by microscopic theory, we uncover the dipole-dependent properties and transport of excitons with different degrees of hybridization. Moreover, we find constant emission quantum yields of the transporting species as a function of excitation power with radiative decay mechanisms dominating over nonradiative ones, a fundamental requirement for efficient excitonic devices. Our findings provide a complete picture of the many-body effects in the transport of dilute exciton gases, and have crucial implications for studying emerging states of matter such as Bose-Einstein condensation and optoelectronic applications based on exciton propagation.
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Affiliation(s)
- Fedele Tagarelli
- Institute of Electrical and Microengineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
| | - Edoardo Lopriore
- Institute of Electrical and Microengineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
| | - Daniel Erkensten
- Department of Physics, Chalmers University of Technology, Gothenburg, Sweden
| | - Raül Perea-Causín
- Department of Physics, Chalmers University of Technology, Gothenburg, Sweden
| | - Samuel Brem
- Department of Physics, Philipps-Universität Marburg, Marburg, Germany
| | - Joakim Hagel
- Department of Physics, Chalmers University of Technology, Gothenburg, Sweden
| | - Zhe Sun
- Institute of Electrical and Microengineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
| | - Gabriele Pasquale
- Institute of Electrical and Microengineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Ermin Malic
- Department of Physics, Chalmers University of Technology, Gothenburg, Sweden
- Department of Physics, Philipps-Universität Marburg, Marburg, Germany
| | - Andras Kis
- Institute of Electrical and Microengineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
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11
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Shi J, Wu X, Wu K, Zhang S, Sui X, Du W, Yue S, Liang Y, Jiang C, Wang Z, Wang W, Liu L, Wu B, Zhang Q, Huang Y, Qiu CW, Liu X. Giant Enhancement and Directional Second Harmonic Emission from Monolayer WS 2 on Silicon Substrate via Fabry-Pérot Micro-Cavity. ACS NANO 2022; 16:13933-13941. [PMID: 35984986 DOI: 10.1021/acsnano.2c03033] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional transition metal dichalcogenides (TMDs) possess large second-order optical nonlinearity, making them ideal candidates for miniaturized on-chip frequency conversion devices, all-optical interconnection, and optoelectronic integration components. However, limited by subnanometer thickness, the monolayer TMD exhibits low second harmonic generation (SHG) conversion efficiency (<0.1%) and poor directionality, which hinders their practical applications. Herein, we proposed a Fabry-Pérot (F-P) cavity formed by coupling an atomically thin WS2 film with a silicon hole matrix to enhance the SH emission. A maximum enhancement (∼1580 times) is achieved by tuning the excitation wavelength to be resonant with the microcavity modes. The giant enhancement is attributed to the strong electric field enhancement in the F-P cavity and the oscillator strength enhancement of excitons from suspended WS2. Moreover, directional SH emission (divergence angle ∼5°) is obtained benefiting from the resonance of the F-P microcavity. Our research results can provide a practical sketch to develop both high-efficiency and directional nonlinear optical devices for silicon-based on-chip integration optics.
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Affiliation(s)
- Jianwei Shi
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Xianxin Wu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Keming Wu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Shuai Zhang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Xinyu Sui
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Wenna Du
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Shuai Yue
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Yin Liang
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Chuanxiu Jiang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Zhuo Wang
- SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Wenxiang Wang
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Luqi Liu
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Bo Wu
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology and Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China
| | - Qing Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Yuan Huang
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Cheng-Wei Qiu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore
| | - Xinfeng Liu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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12
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Yan W, Akimov AV, Barra-Burillo M, Bayer M, Bradford J, Gusev VE, Hueso LE, Kent A, Kukhtaruk S, Nadzeyka A, Patanè A, Rushforth AW, Scherbakov AV, Yaremkevich DD, Linnik TL. Coherent Phononics of van der Waals Layers on Nanogratings. NANO LETTERS 2022; 22:6509-6515. [PMID: 35960261 PMCID: PMC9413225 DOI: 10.1021/acs.nanolett.2c01542] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/17/2022] [Revised: 08/05/2022] [Indexed: 06/15/2023]
Abstract
Strain engineering can be used to control the physical properties of two-dimensional van der Waals (2D-vdW) crystals. Coherent phonons, which carry dynamical strain, could push strain engineering to control classical and quantum phenomena in the unexplored picosecond temporal and nanometer spatial regimes. This intriguing approach requires the use of coherent GHz and sub-THz 2D phonons. Here, we report on nanostructures that combine nanometer thick vdW layers and nanogratings. Using an ultrafast pump-probe technique, we generate and detect in-plane coherent phonons with frequency up to 40 GHz and hybrid flexural phonons with frequency up to 10 GHz. The latter arises from the periodic modulation of the elastic coupling of the vdW layer at the grooves and ridges of the nanograting. This creates a new type of a tailorable 2D periodic phononic nanoobject, a flexural phononic crystal, offering exciting prospects for the ultrafast manipulation of states in 2D materials in emerging quantum technologies.
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Affiliation(s)
- Wenjing Yan
- School
of Physics and Astronomy, University of
Nottingham, Nottingham NG7 2RD, United Kingdom
| | - Andrey V. Akimov
- School
of Physics and Astronomy, University of
Nottingham, Nottingham NG7 2RD, United Kingdom
| | - María Barra-Burillo
- CIC
nanoGUNE BRTA, Tolosa Hiribidea, 76, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Manfred Bayer
- Experimentelle
Physik 2, Technische Universität
Dortmund, Otto-Hahn-Strasse 4a, 44227 Dortmund, Germany
| | - Jonathan Bradford
- School
of Physics and Astronomy, University of
Nottingham, Nottingham NG7 2RD, United Kingdom
| | - Vitalyi E. Gusev
- Laboratoire
d’Acoustique de l’Uiversité du Mans (LAUM), UMR
6613, Institut d’Acoustique - Graduate School (IA-GS), CNRS, Le Mans Université, 72085 Le Mans, France
| | - Luis E. Hueso
- CIC
nanoGUNE BRTA, Tolosa Hiribidea, 76, 20018 Donostia-San Sebastián, Basque Country, Spain
- IKERBASQUE, Basque Foundation
for Science, 48013 Bilbao, Basque Country Spain
| | - Anthony Kent
- School
of Physics and Astronomy, University of
Nottingham, Nottingham NG7 2RD, United Kingdom
| | - Serhii Kukhtaruk
- Department
of Theoretical Physics, V.E. Lashkaryov
Institute of Semiconductor Physics, Pr. Nauky 41, 03028 Kyiv, Ukraine
| | - Achim Nadzeyka
- Raith
GmbH, Konrad-Adenauer-Allee
8, 44263 Dortmund, Germany
| | - Amalia Patanè
- School
of Physics and Astronomy, University of
Nottingham, Nottingham NG7 2RD, United Kingdom
| | - Andrew W. Rushforth
- School
of Physics and Astronomy, University of
Nottingham, Nottingham NG7 2RD, United Kingdom
| | - Alexey V. Scherbakov
- Experimentelle
Physik 2, Technische Universität
Dortmund, Otto-Hahn-Strasse 4a, 44227 Dortmund, Germany
| | - Dmytro D. Yaremkevich
- Experimentelle
Physik 2, Technische Universität
Dortmund, Otto-Hahn-Strasse 4a, 44227 Dortmund, Germany
| | - Tetiana L. Linnik
- Department
of Theoretical Physics, V.E. Lashkaryov
Institute of Semiconductor Physics, Pr. Nauky 41, 03028 Kyiv, Ukraine
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13
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Uddin SZ, Higashitarumizu N, Kim H, Rahman IKMR, Javey A. Efficiency Roll-Off Free Electroluminescence from Monolayer WSe 2. NANO LETTERS 2022; 22:5316-5321. [PMID: 35729730 DOI: 10.1021/acs.nanolett.2c01311] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Exciton-exciton annihilation (EEA) is a nonradiative process commonly observed in excitonic materials at high exciton densities. Like Auger recombination, EEA degrades luminescence efficiency at high exciton densities and causes efficiency roll-off in light-emitting devices. Near-unity photoluminescence quantum yield has been demonstrated in transition metal dichalcogenides (TMDCs) at all exciton densities with optimal band structure modification mediated by strain. Although the recombination pathways in TMDCs are well understood, the practical application of light-emitting devices has been challenging. Here, we demonstrate a roll-off free electroluminescence (EL) device composed of TMDC monolayers tunable by strain. We show a 2 orders of magnitude EL enhancement from the WSe2 monolayer by applying a small strain of 0.5%. We attain an internal quantum efficiency of 8% at all injection rates. Finally, we demonstrate transient EL turn-on voltages as small as the band gap. Our approach will contribute to practical applications of roll-off free optoelectronic devices based on excitonic materials.
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Affiliation(s)
- Shiekh Zia Uddin
- Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Naoki Higashitarumizu
- Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Hyungjin Kim
- Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - I K M Reaz Rahman
- Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Ali Javey
- Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
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