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Roy S, Joseph A, Zhang X, Bhattacharyya S, Puthirath AB, Biswas A, Tiwary CS, Vajtai R, Ajayan PM. Engineered Two-Dimensional Transition Metal Dichalcogenides for Energy Conversion and Storage. Chem Rev 2024. [PMID: 39042038 DOI: 10.1021/acs.chemrev.3c00937] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/24/2024]
Abstract
Designing efficient and cost-effective materials is pivotal to solving the key scientific and technological challenges at the interface of energy, environment, and sustainability for achieving NetZero. Two-dimensional transition metal dichalcogenides (2D TMDs) represent a unique class of materials that have catered to a myriad of energy conversion and storage (ECS) applications. Their uniqueness arises from their ultra-thin nature, high fractions of atoms residing on surfaces, rich chemical compositions featuring diverse metals and chalcogens, and remarkable tunability across multiple length scales. Specifically, the rich electronic/electrical, optical, and thermal properties of 2D TMDs have been widely exploited for electrochemical energy conversion (e.g., electrocatalytic water splitting), and storage (e.g., anodes in alkali ion batteries and supercapacitors), photocatalysis, photovoltaic devices, and thermoelectric applications. Furthermore, their properties and performances can be greatly boosted by judicious structural and chemical tuning through phase, size, composition, defect, dopant, topological, and heterostructure engineering. The challenge, however, is to design and control such engineering levers, optimally and specifically, to maximize performance outcomes for targeted applications. In this review we discuss, highlight, and provide insights on the significant advancements and ongoing research directions in the design and engineering approaches of 2D TMDs for improving their performance and potential in ECS applications.
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Affiliation(s)
- Soumyabrata Roy
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
- Department of Sustainable Energy Engineering, Indian Institute of Technology Kanpur, Kanpur, Uttar Pradesh 208016, India
| | - Antony Joseph
- Department of Metallurgical and Materials Engineering, Indian Institute of Technology, Kharagpur, West Bengal 721302, India
| | - Xiang Zhang
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Sohini Bhattacharyya
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Anand B Puthirath
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Abhijit Biswas
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Chandra Sekhar Tiwary
- Department of Metallurgical and Materials Engineering, Indian Institute of Technology, Kharagpur, West Bengal 721302, India
| | - Robert Vajtai
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Pulickel M Ajayan
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
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2
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Laukkanen P, Punkkinen M, Kuzmin M, Kokko K, Liu X, Radfar B, Vähänissi V, Savin H, Tukiainen A, Hakkarainen T, Viheriälä J, Guina M. Bridging the gap between surface physics and photonics. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2024; 87:044501. [PMID: 38373354 DOI: 10.1088/1361-6633/ad2ac9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/18/2023] [Accepted: 02/19/2024] [Indexed: 02/21/2024]
Abstract
Use and performance criteria of photonic devices increase in various application areas such as information and communication, lighting, and photovoltaics. In many current and future photonic devices, surfaces of a semiconductor crystal are a weak part causing significant photo-electric losses and malfunctions in applications. These surface challenges, many of which arise from material defects at semiconductor surfaces, include signal attenuation in waveguides, light absorption in light emitting diodes, non-radiative recombination of carriers in solar cells, leakage (dark) current of photodiodes, and light reflection at solar cell interfaces for instance. To reduce harmful surface effects, the optical and electrical passivation of devices has been developed for several decades, especially with the methods of semiconductor technology. Because atomic scale control and knowledge of surface-related phenomena have become relevant to increase the performance of different devices, it might be useful to enhance the bridging of surface physics to photonics. Toward that target, we review some evolving research subjects with open questions and possible solutions, which hopefully provide example connecting points between photonic device passivation and surface physics. One question is related to the properties of the wet chemically cleaned semiconductor surfaces which are typically utilized in device manufacturing processes, but which appear to be different from crystalline surfaces studied in ultrahigh vacuum by physicists. In devices, a defective semiconductor surface often lies at an embedded interface formed by a thin metal or insulator film grown on the semiconductor crystal, which makes the measurements of its atomic and electronic structures difficult. To understand these interface properties, it is essential to combine quantum mechanical simulation methods. This review also covers metal-semiconductor interfaces which are included in most photonic devices to transmit electric carriers to the semiconductor structure. Low-resistive and passivated contacts with an ultrathin tunneling barrier are an emergent solution to control electrical losses in photonic devices.
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Affiliation(s)
- Pekka Laukkanen
- Department of Physics and Astronomy, University of Turku, Turku, Finland
| | - Marko Punkkinen
- Department of Physics and Astronomy, University of Turku, Turku, Finland
| | - Mikhail Kuzmin
- Department of Physics and Astronomy, University of Turku, Turku, Finland
| | - Kalevi Kokko
- Department of Physics and Astronomy, University of Turku, Turku, Finland
| | - Xiaolong Liu
- Department of Electronics and Nanoengineering, Aalto University, Espoo, Finland
| | - Behrad Radfar
- Department of Electronics and Nanoengineering, Aalto University, Espoo, Finland
| | - Ville Vähänissi
- Department of Electronics and Nanoengineering, Aalto University, Espoo, Finland
| | - Hele Savin
- Department of Electronics and Nanoengineering, Aalto University, Espoo, Finland
| | - Antti Tukiainen
- Optoelectronics Research Centre, Tampere University, Tampere, Finland
| | - Teemu Hakkarainen
- Optoelectronics Research Centre, Tampere University, Tampere, Finland
| | - Jukka Viheriälä
- Optoelectronics Research Centre, Tampere University, Tampere, Finland
| | - Mircea Guina
- Optoelectronics Research Centre, Tampere University, Tampere, Finland
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3
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Kim KH, Song S, Kim B, Musavigharavi P, Trainor N, Katti K, Chen C, Kumari S, Zheng J, Redwing JM, Stach EA, Olsson Iii RH, Jariwala D. Tuning Polarity in WSe 2/AlScN FeFETs via Contact Engineering. ACS NANO 2024; 18:4180-4188. [PMID: 38271989 DOI: 10.1021/acsnano.3c09279] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/27/2024]
Abstract
Recent advancements in ferroelectric field-effect transistors (FeFETs) using two-dimensional (2D) semiconductor channels and ferroelectric Al0.68Sc0.32N (AlScN) allow high-performance nonvolatile devices with exceptional ON-state currents, large ON/OFF current ratios, and large memory windows (MW). However, previous studies have solely focused on n-type FeFETs, leaving a crucial gap in the development of p-type and ambipolar FeFETs, which are essential for expanding their applicability to a wide range of circuit-level applications. Here, we present a comprehensive demonstration of n-type, p-type, and ambipolar FeFETs on an array scale using AlScN and multilayer/monolayer WSe2. The dominant injected carrier type is modulated through contact engineering at the metal-semiconductor junction, resulting in the realization of all three types of FeFETs. The effect of contact engineering on the carrier injection is further investigated through technology-computer-aided design simulations. Moreover, our 2D WSe2/AlScN FeFETs achieve high electron and hole current densities of ∼20 and ∼10 μA/μm, respectively, with a high ON/OFF ratio surpassing ∼107 and a large MW of >6 V (0.14 V/nm).
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Affiliation(s)
- Kwan-Ho Kim
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Seunguk Song
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Bumho Kim
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Pariasadat Musavigharavi
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Nicholas Trainor
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16801, United States
| | - Keshava Katti
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Chen Chen
- 2D Crystal Consortium Materials Innovation Platform, Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16801, United States
| | - Shalini Kumari
- 2D Crystal Consortium Materials Innovation Platform, Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16801, United States
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16801, United States
| | - Jeffrey Zheng
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Joan M Redwing
- 2D Crystal Consortium Materials Innovation Platform, Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16801, United States
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16801, United States
| | - Eric A Stach
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Roy H Olsson Iii
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
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4
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Ra HS, Lee SH, Jeong SJ, Cho S, Lee JS. Advances in Heterostructures for Optoelectronic Devices: Materials, Properties, Conduction Mechanisms, Device Applications. SMALL METHODS 2024; 8:e2300245. [PMID: 37330655 DOI: 10.1002/smtd.202300245] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/25/2023] [Revised: 04/20/2023] [Indexed: 06/19/2023]
Abstract
Atomically thin 2D transition metal dichalcogenides (TMDs) have recently been spotlighted for next-generation electronic and photoelectric device applications. TMD materials with high carrier mobility have superior electronic properties different from bulk semiconductor materials. 0D quantum dots (QDs) possess the ability to tune their bandgap by composition, diameter, and morphology, which allows for a control of their light absorbance and emission wavelength. However, QDs exhibit a low charge carrier mobility and the presence of surface trap states, making it difficult to apply them to electronic and optoelectronic devices. Accordingly, 0D/2D hybrid structures are considered as functional materials with complementary advantages that may not be realized with a single component. Such advantages allow them to be used as both transport and active layers in next-generation optoelectronic applications such as photodetectors, image sensors, solar cells, and light-emitting diodes. Here, recent discoveries related to multicomponent hybrid materials are highlighted. Research trends in electronic and optoelectronic devices based on hybrid heterogeneous materials are also introduced and the issues to be solved from the perspective of the materials and devices are discussed.
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Affiliation(s)
- Hyun-Soo Ra
- Department of Energy Science and Engineering and Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Castelldefels, 08860, Barcelona, Spain
| | - Sang-Hyeon Lee
- Department of Energy Science and Engineering and Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea
| | - Seock-Jin Jeong
- Department of Energy Science and Engineering and Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea
| | - Sinyoung Cho
- Department of Energy Science and Engineering and Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea
| | - Jong-Soo Lee
- Department of Energy Science and Engineering and Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science & Technology (DGIST), Daegu, 42988, Republic of Korea
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5
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Sovizi S, Angizi S, Ahmad Alem SA, Goodarzi R, Taji Boyuk MRR, Ghanbari H, Szoszkiewicz R, Simchi A, Kruse P. Plasma Processing and Treatment of 2D Transition Metal Dichalcogenides: Tuning Properties and Defect Engineering. Chem Rev 2023; 123:13869-13951. [PMID: 38048483 PMCID: PMC10756211 DOI: 10.1021/acs.chemrev.3c00147] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/13/2023] [Revised: 08/31/2023] [Accepted: 11/09/2023] [Indexed: 12/06/2023]
Abstract
Two-dimensional transition metal dichalcogenides (TMDs) offer fascinating opportunities for fundamental nanoscale science and various technological applications. They are a promising platform for next generation optoelectronics and energy harvesting devices due to their exceptional characteristics at the nanoscale, such as tunable bandgap and strong light-matter interactions. The performance of TMD-based devices is mainly governed by the structure, composition, size, defects, and the state of their interfaces. Many properties of TMDs are influenced by the method of synthesis so numerous studies have focused on processing high-quality TMDs with controlled physicochemical properties. Plasma-based methods are cost-effective, well controllable, and scalable techniques that have recently attracted researchers' interest in the synthesis and modification of 2D TMDs. TMDs' reactivity toward plasma offers numerous opportunities to modify the surface of TMDs, including functionalization, defect engineering, doping, oxidation, phase engineering, etching, healing, morphological changes, and altering the surface energy. Here we comprehensively review all roles of plasma in the realm of TMDs. The fundamental science behind plasma processing and modification of TMDs and their applications in different fields are presented and discussed. Future perspectives and challenges are highlighted to demonstrate the prominence of TMDs and the importance of surface engineering in next-generation optoelectronic applications.
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Affiliation(s)
- Saeed Sovizi
- Faculty of
Chemistry, Biological and Chemical Research Centre, University of Warsaw, Żwirki i Wigury 101, 02-089, Warsaw, Poland
| | - Shayan Angizi
- Department
of Chemistry and Chemical Biology, McMaster
University, Hamilton, Ontario L8S 4M1, Canada
| | - Sayed Ali Ahmad Alem
- Chair in
Chemistry of Polymeric Materials, Montanuniversität
Leoben, Leoben 8700, Austria
| | - Reyhaneh Goodarzi
- School of
Metallurgy and Materials Engineering, Iran
University of Science and Technology (IUST), Narmak, 16846-13114, Tehran, Iran
| | | | - Hajar Ghanbari
- School of
Metallurgy and Materials Engineering, Iran
University of Science and Technology (IUST), Narmak, 16846-13114, Tehran, Iran
| | - Robert Szoszkiewicz
- Faculty of
Chemistry, Biological and Chemical Research Centre, University of Warsaw, Żwirki i Wigury 101, 02-089, Warsaw, Poland
| | - Abdolreza Simchi
- Department
of Materials Science and Engineering and Institute for Nanoscience
and Nanotechnology, Sharif University of
Technology, 14588-89694 Tehran, Iran
- Center for
Nanoscience and Nanotechnology, Institute for Convergence Science
& Technology, Sharif University of Technology, 14588-89694 Tehran, Iran
| | - Peter Kruse
- Department
of Chemistry and Chemical Biology, McMaster
University, Hamilton, Ontario L8S 4M1, Canada
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6
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Ram A, Maity K, Marchand C, Mahmoudi A, Kshirsagar AR, Soliman M, Taniguchi T, Watanabe K, Doudin B, Ouerghi A, Reichardt S, O'Connor I, Dayen JF. Reconfigurable Multifunctional van der Waals Ferroelectric Devices and Logic Circuits. ACS NANO 2023; 17:21865-21877. [PMID: 37864568 DOI: 10.1021/acsnano.3c07952] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/23/2023]
Abstract
Emerging reconfigurable devices are fast gaining popularity in the search for next-generation computing hardware, while ferroelectric engineering of the doping state in semiconductor materials has the potential to offer alternatives to traditional von-Neumann architecture. In this work, we combine these concepts and demonstrate the suitability of reconfigurable ferroelectric field-effect transistors (Re-FeFETs) for designing nonvolatile reconfigurable logic-in-memory circuits with multifunctional capabilities. Modulation of the energy landscape within a homojunction of a 2D tungsten diselenide (WSe2) layer is achieved by independently controlling two split-gate electrodes made of a ferroelectric 2D copper indium thiophosphate (CuInP2S6) layer. Controlling the state encoded in the program gate enables switching between p, n, and ambipolar FeFET operating modes. The transistors exhibit on-off ratios exceeding 106 and hysteresis windows of up to 10 V width. The homojunction can change from Ohmic-like to diode behavior with a large rectification ratio of 104. When programmed in the diode mode, the large built-in p-n junction electric field enables efficient separation of photogenerated carriers, making the device attractive for energy-harvesting applications. The implementation of the Re-FeFET for reconfigurable logic functions shows how a circuit can be reconfigured to emulate either polymorphic ferroelectric NAND/AND logic-in-memory or electronic XNOR logic with a long retention time exceeding 104 s. We also illustrate how a circuit design made of just two Re-FeFETs exhibits high logic expressivity with reconfigurability at runtime to implement several key nonvolatile 2-input logic functions. Moreover, the Re-FeFET circuit demonstrates high compactness, with an up to 80% reduction in transistor count compared to standard CMOS design. The 2D van de Waals Re-FeFET devices therefore exhibit promising potential for both More-than-Moore and beyond-Moore future of electronics, in particular for an energy-efficient implementation of in-memory computing and machine learning hardware, due to their multifunctionality and design compactness.
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Affiliation(s)
- Ankita Ram
- Université de Strasbourg, IPCMS-CNRS UMR 7504, 23 Rue du Loess, 67034 Strasbourg, France
| | - Krishna Maity
- Université de Strasbourg, IPCMS-CNRS UMR 7504, 23 Rue du Loess, 67034 Strasbourg, France
| | - Cédric Marchand
- École Centrale de Lyon, 36 Avenue Guy de Collongue, Ecully 69134, France
| | - Aymen Mahmoudi
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120 Palaiseau, France
| | - Aseem Rajan Kshirsagar
- Department of Physics and Materials Science, University of Luxembourg, Luxembourg 1511, Luxembourg
| | - Mohamed Soliman
- Université de Strasbourg, IPCMS-CNRS UMR 7504, 23 Rue du Loess, 67034 Strasbourg, France
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Bernard Doudin
- Université de Strasbourg, IPCMS-CNRS UMR 7504, 23 Rue du Loess, 67034 Strasbourg, France
- Institut Universitaire de France, 1 rue Descartes, 75231 Paris cedex 05, France
| | - Abdelkarim Ouerghi
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120 Palaiseau, France
| | - Sven Reichardt
- Department of Physics and Materials Science, University of Luxembourg, Luxembourg 1511, Luxembourg
| | - Ian O'Connor
- École Centrale de Lyon, 36 Avenue Guy de Collongue, Ecully 69134, France
| | - Jean-Francois Dayen
- Université de Strasbourg, IPCMS-CNRS UMR 7504, 23 Rue du Loess, 67034 Strasbourg, France
- Institut Universitaire de France, 1 rue Descartes, 75231 Paris cedex 05, France
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7
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Yang AJ, Wu L, Liu Y, Zhang X, Han K, Huang Y, Li S, Loh XJ, Zhu Q, Su R, Nan CW, Renshaw Wang X. Multifunctional Magnetic Oxide-MoS 2 Heterostructures on Silicon. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2302620. [PMID: 37227936 DOI: 10.1002/adma.202302620] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/21/2023] [Revised: 05/12/2023] [Indexed: 05/27/2023]
Abstract
Correlated oxides and related heterostructures are intriguing for developing future multifunctional devices by exploiting their exotic properties, but their integration with other materials, especially on Si-based platforms, is challenging. Here, van der Waals heterostructures of La0.7 Sr0.3 MnO3 (LSMO) , a correlated manganite perovskite, and MoS2 are demonstrated on Si substrates with multiple functions. To overcome the problems due to the incompatible growth process, technologies involving freestanding LSMO membranes and van der Waals force-mediated transfer are used to fabricate the LSMO-MoS2 heterostructures. The LSMO-MoS2 heterostructures exhibit a gate-tunable rectifying behavior, based on which metal-semiconductor field-effect transistors (MESFETs) with on-off ratios of over 104 can be achieved. The LSMO-MoS2 heterostructures can function as photodiodes displaying considerable open-circuit voltages and photocurrents. In addition, the colossal magnetoresistance of LSMO endows the LSMO-MoS2 heterostructures with an electrically tunable magnetoresponse at room temperature. This work not only proves the applicability of the LSMO-MoS2 heterostructure devices on Si-based platform but also demonstrates a paradigm to create multifunctional heterostructures from materials with disparate properties.
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Affiliation(s)
- Allen Jian Yang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Liang Wu
- Faculty of Material Science and Engineering, Kunming University of Science and Technology, Kunming, Yunnan, 650093, China
| | - Yanran Liu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Xinyu Zhang
- Faculty of Material Science and Engineering, Kunming University of Science and Technology, Kunming, Yunnan, 650093, China
| | - Kun Han
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, China
| | - Ying Huang
- State Key Laboratory of Environment-friendly Energy Materials, Southwest University of Science and Technology, Mianyang, 621010, China
| | - Shengyao Li
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Xian Jun Loh
- Institute of Materials Research and Engineering (IMRE), A*STAR, 2 Fusionopolis Way, Innovis, Singapore, 138634, Singapore
| | - Qiang Zhu
- Institute of Materials Research and Engineering (IMRE), A*STAR, 2 Fusionopolis Way, Innovis, Singapore, 138634, Singapore
- School of Chemistry, Chemical Engineering and Biotechnology, Nanyang Technological University, 21 Nanyang Link, Singapore, 637371, Singapore
| | - Rui Su
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 637371, Singapore
- MajuLab, International Joint Research Unit UMI 3654, CNRS, Université Côte d'Azur, Sorbonne Université, National University of Singapore, Nanyang Technological University, Singapore, 637371, Singapore
| | - Ce-Wen Nan
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Xiao Renshaw Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 637371, Singapore
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8
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Zhou Y, Tong L, Chen Z, Tao L, Pang Y, Xu JB. Contact-engineered reconfigurable two-dimensional Schottky junction field-effect transistor with low leakage currents. Nat Commun 2023; 14:4270. [PMID: 37460531 DOI: 10.1038/s41467-023-39705-w] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/16/2023] [Accepted: 06/26/2023] [Indexed: 07/20/2023] Open
Abstract
Two-dimensional (2D) materials have been considered promising candidates for future low power-dissipation and reconfigurable integrated circuit applications. However, 2D transistors with intrinsic ambipolar transport polarity are usually affected by large off-state leakage currents and small on/off ratios. Here, we report the realization of a reconfigurable Schottky junction field-effect transistor (SJFET) in an asymmetric van der Waals contact geometry, showing a balanced and switchable n- and p-unipolarity with the Ids on/off ratio kept >106. Meanwhile, the static leakage power consumption was suppressed to 10-5 nW. The SJFET worked as a reversible Schottky rectifier with an ideality factor of ~1.0 and a tuned rectifying ratio from 3 × 106 to 2.5 × 10-6. This empowered the SJFET with a reconfigurable photovoltaic performance in which the sign of the open-circuit voltage and photo-responsivity were substantially switched. This polarity-reversible SJFET paves an alternative way to develop reconfigurable 2D devices for low-power-consumption photovoltaic logic circuits.
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Affiliation(s)
- Yaoqiang Zhou
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong, SAR, China
| | - Lei Tong
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong, SAR, China
| | - Zefeng Chen
- School of Optoelectronic Science and Engineering and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, 215006, Suzhou, China
| | - Li Tao
- Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Yue Pang
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong, SAR, China
| | - Jian-Bin Xu
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong, SAR, China.
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9
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Le Thi HY, Ngo TD, Phan NAN, Shin H, Uddin I, A V, Liang CT, Aoki N, Yoo WJ, Watanabe K, Taniguchi T, Kim GH. Doping-Free High-Performance Photovoltaic Effect in a WSe 2 Lateral p-n Homojunction Formed by Contact Engineering. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37442799 DOI: 10.1021/acsami.3c05451] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/15/2023]
Abstract
Two-dimensional transition metal dichalcogenides (TMDs) are promising materials for semiconductor nanodevices owing to their flexibility, transparency, and appropriate band gaps. A variety of optoelectronic and electronic devices based on TMDs p-n diodes have been extensively investigated due to their unique advantages. However, improving their performance is challenging for commercial applications. In this study, we propose a facile and doping-free approach based on the contact engineering of a few-layer tungsten di-selenide to form a lateral p-n homojunction photovoltaic. By combining surface and edge contacts for p-n diode fabrication, the photovoltaic effect is achieved with a high fill factor of ≈0.64, a power conversion efficiency of up to ≈4.5%, and the highest external quantum efficiency with a value of ≈67.6%. The photoresponsivity reaches 283 mA/W, indicating excellent photodiode performance. These results demonstrate that our technique has great potential for application in next-generation optoelectronic devices.
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Affiliation(s)
- Hai Yen Le Thi
- Sungkyunkwan Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Tien Dat Ngo
- Sungkyunkwan Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Nhat Anh Nguyen Phan
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Hoseong Shin
- Sungkyunkwan Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Inayat Uddin
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Venkatesan A
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Chi-Te Liang
- Graduate Institute of Applied Physics, National Taiwan University, Taipei 106, Taiwan
| | - Nobuyuki Aoki
- Department of Materials Science, Chiba University, Chiba 263-8522, Japan
| | - Won Jong Yoo
- Sungkyunkwan Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Material Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Gil-Ho Kim
- Sungkyunkwan Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
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10
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Chen X, Wang X, Pang Y, Bao G, Jiang J, Yang P, Chen Y, Rao T, Liao W. Printed Electronics Based on 2D Material Inks: Preparation, Properties, and Applications toward Memristors. SMALL METHODS 2023; 7:e2201156. [PMID: 36610015 DOI: 10.1002/smtd.202201156] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/05/2022] [Revised: 12/07/2022] [Indexed: 06/17/2023]
Abstract
Printed electronics, which fabricate electrical components and circuits on various substrates by leveraging functional inks and advanced printing technologies, have recently attracted tremendous attention due to their capability of large-scale, high-speed, and cost-effective manufacturing and also their great potential in flexible and wearable devices. To further achieve multifunctional, practical, and commercial applications, various printing technologies toward smarter pattern-design, higher resolution, greater production flexibility, and novel ink formulations toward multi-functionalities and high quality have been insensitively investigated. 2D materials, possessing atomically thin thickness, unique properties and excellent solution-processable ability, hold great potential for high-quality inks. Besides, the great variety of 2D materials ranging from metals, semiconductors to insulators offers great freedom to formulate versatile inks to construct various printed electronics. Here, a detailed review of the progress on 2D material inks formulation and its printed applications has been provided, specifically with an emphasis on emerging printed memristors. Finally, the challenges facing the field and prospects of 2D material inks and printed electronics are discussed.
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Affiliation(s)
- Xiaopei Chen
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Xiongfeng Wang
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Yudong Pang
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Guocheng Bao
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Jie Jiang
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Peng Yang
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, China
- College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University, Shenzhen, 518118, China
| | - Yuankang Chen
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Tingke Rao
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Wugang Liao
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, China
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11
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Kangsabanik J, Svendsen MK, Taghizadeh A, Crovetto A, Thygesen KS. Indirect Band Gap Semiconductors for Thin-Film Photovoltaics: High-Throughput Calculation of Phonon-Assisted Absorption. J Am Chem Soc 2022; 144:19872-19883. [PMID: 36270007 DOI: 10.1021/jacs.2c07567] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
Discovery of high-performance materials remains one of the most active areas in photovoltaics (PV) research. Indirect band gap materials form the largest part of the semiconductor chemical space, but predicting their suitability for PV applications from first-principles calculations remains challenging. Here, we propose a computationally efficient method to account for phonon-assisted absorption across the indirect band gap and use it to screen 127 experimentally known binary semiconductors for their potential as thin-film PV absorbers. Using screening descriptors for absorption, carrier transport, and nonradiative recombination, we identify 28 potential candidate materials. The list, which contains 20 indirect band gap semiconductors, comprises well-established (3), emerging (16), and previously unexplored (9) absorber materials. Most of the new compounds are anion-rich chalcogenides (TiS3 and Ga2Te5) and phosphides (PdP2, CdP4, MgP4, and BaP3) containing homoelemental bonds and represent a new frontier in PV materials research. Our work highlights the previously underexplored potential of indirect band gap materials for optoelectronic thin-film technologies.
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Affiliation(s)
- Jiban Kangsabanik
- CAMD, Computational Atomic-Scale Materials Design, Department of Physics, Technical University of Denmark, 2800Kgs. Lyngby, Denmark
| | - Mark Kamper Svendsen
- CAMD, Computational Atomic-Scale Materials Design, Department of Physics, Technical University of Denmark, 2800Kgs. Lyngby, Denmark
| | - Alireza Taghizadeh
- CAMD, Computational Atomic-Scale Materials Design, Department of Physics, Technical University of Denmark, 2800Kgs. Lyngby, Denmark
| | - Andrea Crovetto
- National Centre for Nano Fabrication and Characterization (DTU Nanolab), Technical University of Denmark, 2800Kgs. Lyngby, Denmark
| | - Kristian S Thygesen
- CAMD, Computational Atomic-Scale Materials Design, Department of Physics, Technical University of Denmark, 2800Kgs. Lyngby, Denmark
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12
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Wang H, Wang W, Zhong Y, Li D, Li Z, Xu X, Song X, Chen Y, Huang P, Mei A, Han H, Zhai T, Zhou X. Approaching the External Quantum Efficiency Limit in 2D Photovoltaic Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2206122. [PMID: 35953088 DOI: 10.1002/adma.202206122] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/05/2022] [Revised: 08/01/2022] [Indexed: 06/15/2023]
Abstract
2D transition metal dichalcogenides (TMDs) are promising candidates for realizing ultrathin and high-performance photovoltaic devices. However, the external quantum efficiency (EQE) and power conversion efficiency (PCE) of most 2D photovoltaic devices face great challenges in exceeding 50% and 3%, respectively, due to the low efficiency of photocarrier separation and collection. Here, this study demonstrates photovoltaic devices with defect-free interface and recombination-free channel based on 2D WS2 , showing high EQE of 92% approaching the theoretical limit and high PCE of 5.0%. The high performances are attributed to the van der Waals metal contact without interface defects and Fermi-level pinning, and the fully depleted channel without photocarrier recombination, leading to intrinsic photocarrier separation and collection with high efficiency. Furthermore, this study demonstrates that the strategy can be extended to other TMDs such as MoSe2 and WSe2 with EQE of 92% and 94%, respectively. This work proposes a universal strategy for building high-performance 2D photovoltaic devices. The nearly ideal EQE provides great potential for PCE approaching the Shockley-Queisser limit.
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Affiliation(s)
- Haoyun Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Wei Wang
- Michael Grätzel Center for Mesoscopic Solar Cells, Wuhan National Laboratory for Optoelectronics, Key Laboratory of Materials Chemistry for Energy Conversion and Storage of Ministry of Education, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yongle Zhong
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Dongyan Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Zexin Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Xiang Xu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Xingyu Song
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yunxin Chen
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Pu Huang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Anyi Mei
- Michael Grätzel Center for Mesoscopic Solar Cells, Wuhan National Laboratory for Optoelectronics, Key Laboratory of Materials Chemistry for Energy Conversion and Storage of Ministry of Education, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Hongwei Han
- Michael Grätzel Center for Mesoscopic Solar Cells, Wuhan National Laboratory for Optoelectronics, Key Laboratory of Materials Chemistry for Energy Conversion and Storage of Ministry of Education, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Xing Zhou
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
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