High-Performance Thermoelectrics Based on Solution-Grown SnSe Nanostructures

Light-Induced Nonthermal Phase Transition to the Topological Crystalline Insulator State in SnSe

Femtosecond pulses have been used to reveal hidden broken symmetry states and induce transitions to metastable states. However, these states are mostly transient and disappear after laser removal. Photoinduced phase transitions toward crystalline metastable states with a change of topological order are rare and difficult to predict and realize experimentally. Here, by using constrained density functional perturbation theory and accounting for light-induced quantum anharmonicity, we show that ultrafast lasers can permanently transform the topologically trivial orthorhombic structure of SnSe into the topological crystalline insulating rocksalt phase via a first-order nonthermal phase transition. We describe the reaction path and evaluate the critical fluence and possible decay channels after photoexcitation. Our simulations of the photoexcited structural and vibrational properties are in excellent agreement with recent pump-probe data in the intermediate fluence regime below the transition with an error on the curvature of the quantum free energy of the photoexcited state that is smaller than 2%.

Controlled Synthesis and Accurate Doping of Wafer-Scale 2D Semiconducting Transition Metal Dichalcogenides

2D semiconducting transition metal dichalcogenide (TMDCs) possess atomically thin thickness, a dangling-bond-free surface, flexible band structure, and silicon-compatible feature, making them one of the most promising channels for constructing state-of-the-art field-effect transistors in the post-Moore's era. However, the existing 2D semiconducting TMDCs fall short of meeting the industry criteria for practical applications in electronics due to their small domain size and the lack of an effective approach to modulate intrinsic physical properties. Therefore, it is crucial to prepare and dope 2D semiconducting TMDCs single crystals with wafer size. In this review, the up-to-date progress regarding the wafer-scale growth of 2D semiconducting TMDC polycrystalline and single-crystal films is systematically summarized. The domain orientation control of 2D TMDCs and the seamless stitching of unidirectionally aligned 2D islands by means of substrate design are proposed. In addition, the accurate and uniform doping of 2D semiconducting TMDCs and the effect on electronic device performances are also discussed. Finally, the dominating challenges pertaining to the enhancement of the electronic device performances of TMDCs are emphasized, and further development directions are put forward. This review provides a systematic and in-depth summary of high-performance device applications of 2D semiconducting TMDCs.

Epsilon-poly-l-lysine conjugated erythromycin for enhanced antibiotic therapy

Antibiotic resistance is a big threat to public health. How to improve the therapeutic efficacy of conventional antibiotics is an effective way to address this issue. In order to enhance the antibacterial activity of conventional antibiotic erythromycin (EM), EM is conjugated to positively charged ε-poly-l-lysine (EPL) to obtain EPL modified EM (EPL-EM). The grafting ratio of EM can be calculated from the ¹H NMR spectrum. EPL-EM is stable in physiological environment, while EM can be readily released from EPL-EM upon incubating with esterase which can be secreted by most bacteria. Because of the presence of cationic EPL, EPL-EM showed much stronger antibacterial activity than free EM, with much lower minimum inhibitory concentration (MIC) and minimum bactericidal concentration (MBC). Moreover, compared to free EM, the development of drug resistance can be slowed down if EPL-EM is used, which can be ascribed to the reduction of EM dosage. Meanwhile, EPL-EM cannot induce hemolysis and cytotoxicity, which indicates that EPL-EM exhibits excellent biocompatibility. The design of EPL-EM with enhanced antibacterial activity and excellent biocompatibility provides an innovative way to combat antibiotic resistance.

Electrical and Optical Properties of γ-SnSe: A New Ultra-narrow Band Gap Material

We describe the unusual properties of γ-SnSe, a new orthorhombic binary phase in the tin monoselenide system. This phase exhibits an ultranarrow band gap under standard pressure and temperature conditions, leading to high conductivity under ambient conditions. Density functional calculations identified the similarity and difference between the new γ-SnSe phase and the conventional α-SnSe based on the electron localization function. Very good agreement was obtained for the band gap width between the band structure calculations and the experiment, and insight provided for the mechanism of reduction in the band gap. The unique properties of this material may render it useful for applications such as thermal imaging devices and solar cells.

Insight into the intrinsic microstructures of polycrystalline SnSe based compounds

SnSe based compounds have attracted much attention due to the ultra-low lattice thermal conductivity and excellent thermoelectric properties. The origin of the low thermal conductivity has been ascribed to the strong phonon anharmonicity. Generally, the microstructures are also effective in scattering the phonons and further reducing the lattice thermal conductivity. In this work, the microstructures of undoped SnSe and Bi-doped Sn_0.97SeBi_0.03have been investigated by transmission electron microscopy. A characteristic microstructure of lath-like grains has been observed in SnSe based compounds from perpendicular to the pressure direction. In addition, there exist a large quantity of low-angle grain boundaries and a high concentration of edge dislocations and stacking faults in the grains. All these microstructures result in lattice mismatch and distortion and can act as the phonon scattering centers, which broaden the understanding of the low thermal conductivity of SnSe based compounds.

Enhanced Density of States Facilitates High Thermoelectric Performance in Solution-Grown Ge- and In-Codoped SnSe Nanoplates

SnSe single crystals have gained great interest due to their excellent thermoelectric performance. However, polycrystalline SnSe is greatly desired due to facile processing, machinability, and scale-up application. Here, we report an outstanding high average ZT of 0.88 as well as a high peak ZT of 1.92 in solution-processed SnSe nanoplates. Nanosized boundaries formed by nanoplates and lattice strain created by lattice dislocations and stacking faults effectively scatter heat-carrying phonons, resulting in an ultralow lattice thermal conductivity of 0.19 W m^-1 K^-1 at 873 K. Ultraviolet photoelectron spectroscopy reveals that Ge and In incorporation produces an enhanced density of states in the electronic structure of SnSe, resulting in a large Seebeck coefficient. Ge and In codoping not only optimizes the Seebeck coefficient but also substantially increases the carrier concentration and electrical conductivity, helping to maintain a high power factor over a wide temperature range. Benefiting from an enhanced power factor and markedly reduced lattice thermal conductivity, high average ZT and peak ZT are achieved in Ge- and In-codoped SnSe nanoplates. This work achieves an ultrahigh average ZT of 0.88 in polycrystalline SnSe by adopting nontoxic element doping, potentially expanding its usefulness for various thermoelectric generator applications.

Giant Thermoelectric Efficiency of Single-Filled Skutterudite Nanocomposites: Role of Interface Carrier Filtering

The advantage of secondary-phase induced carrier filtering on the thermoelectric properties has paved the way for developing cost-effective, highly efficient thermoelectric materials. Here, we report a very high thermoelectric figure-of-merit of skutterudite nanocomposites achieved by tailoring interface carrier filtering. The single-filled skutterudite nanocomposites are prepared by dispersing rare-earth oxides nanoparticles (Yb₂O₃, Sm₂O₃, La₂O₃) in the skutterudite (Dy_0.4Co_3.2Ni_0.8Sb₁₂) matrix. The nanoparticles/skutterudite interfaces act as efficient carrier filters, thereby significantly enhancing the Seebeck coefficient without compromising the electrical conductivity. As a result, the highest power factor of ∼6.5 W/mK² is achieved in the skutterudite nanocomposites. The nonuniform strain distribution near the nanoparticles due to the local lattice misfit and concentration fluctuations affect the heat carriers and thereby reduce the lattice thermal conductivity. Moreover, the three-dimensional atom probe analysis reveals the formation of Ni-rich grain boundaries in the skutterudite matrix, which also facilitates the reduction of lattice thermal conductivity. Both the factors, i.e., the reduction in lattice thermal conductivity and the enhancement of the power factor, lead to an enormous increase in ZT up to ∼1.84 at 723 K and an average ZT of about 1.56 in the temperature range from 523 to 723 K, the highest among the single-filled skutterudites reported so far.

Modular Nanostructures Facilitate Low Thermal Conductivity and Ultra-High Thermoelectric Performance in n-Type SnSe

Single crystals of SnSe have gained considerable attention in thermoelectrics due to their unprecedented thermoelectric performance. However, polycrystalline SnSe is more favorable for practical applications due to its facile chemical synthesis procedure, processability, and scalability. Though the thermoelectric figure of merit (zT) of p-type bulk SnSe polycrystals has reached >2.5, zT of n-type counterpart is still lower and lies around ≈1.5. Herein, record high zT of 2.0 in n-type polycrystalline SnSe_0.92  + x mol% MoCl₅ (x = 0-3) samples is reported, when measured parallel to the spark plasma sintering pressing direction due to the simultaneous optimization of n-type carrier concentration and enhanced phonon scattering by incorporating modular nano-heterostructures in SnSe matrix. Modular nanostructures of layered intergrowth [(SnSe)_1.05 ]_m (MoSe₂ )_n like compounds embedded in SnSe matrix scatters the phonons significantly leading to an ultra-low lattice thermal conductivity (κ_lat ) of ≈0.26 W m^-1 K^-1 at 798 K in SnSe_0.92  + 3 mol% MoCl₅ . The 2D layered modular intergrowth compound resembles the nano-heterostructure and their periodicity of 1.2-2.6 nm in the SnSe matrix matches the phonon mean free path of SnSe, thereby blocking the heat carrying phonons, which result in low κ_lat and ultra-high thermoelectric performance in n-type SnSe.

Surface Functionalization of Surfactant-Free Particles: A Strategy to Tailor the Properties of Nanocomposites for Enhanced Thermoelectric Performance

The broad implementation of thermoelectricity requires high-performance and low-cost materials. One possibility is employing surfactant-free solution synthesis to produce nanopowders. We propose the strategy of functionalizing "naked" particles' surface by inorganic molecules to control the nanostructure and, consequently, thermoelectric performance. In particular, we use bismuth thiolates to functionalize surfactant-free SnTe particles' surfaces. Upon thermal processing, bismuth thiolates decomposition renders SnTe-Bi₂ S₃ nanocomposites with synergistic functions: 1) carrier concentration optimization by Bi doping; 2) Seebeck coefficient enhancement and bipolar effect suppression by energy filtering; and 3) lattice thermal conductivity reduction by small grain domains, grain boundaries and nanostructuration. Overall, the SnTe-Bi₂ S₃ nanocomposites exhibit peak z T up to 1.3 at 873 K and an average z T of ≈0.6 at 300-873 K, which is among the highest reported for solution-processed SnTe.

Surface Functionalization of Surfactant-Free Particles: A Strategy to Tailor the Properties of Nanocomposites for Enhanced Thermoelectric Performance

The broad implementation of thermoelectricity requires high-performance and low-cost materials. One possibility is employing surfactant-free solution synthesis to produce nanopowders. We propose the strategy of functionalizing "naked" particles' surface by inorganic molecules to control the nanostructure and, consequently, thermoelectric performance. In particular, we use bismuth thiolates to functionalize surfactant-free SnTe particles' surfaces. Upon thermal processing, bismuth thiolates decomposition renders SnTe-Bi2S3 nanocomposites with synergistic functions: 1) carrier concentration optimization by Bi doping; 2) Seebeck coefficient enhancement and bipolar effect suppression by energy filtering; and 3) lattice thermal conductivity reduction by small grain domains, grain boundaries and nanostructuration. Overall, the SnTe-Bi2S3 nanocomposites exhibit peak z  T up to 1.3 at 873 K and an average z  T of ≈0.6 at 300-873 K, which is among the highest reported for solution-processed SnTe.