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Feng M, Li J, Zhang S, Pofelski A, Hage RE, Klewe C, N’diaye AT, Shafer P, Zhu Y, Galli G, Schuller IK, Takamura Y. Hydrogen-Induced Topotactic Phase Transformations of Cobaltite Thin Films. THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2024; 128:17124-17133. [PMID: 39411579 PMCID: PMC11472462 DOI: 10.1021/acs.jpcc.4c04098] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/19/2024] [Revised: 09/14/2024] [Accepted: 09/18/2024] [Indexed: 10/19/2024]
Abstract
Manipulating physical properties through ion migration in complex oxide thin films is an emerging research direction to achieve tunable materials for advanced applications. While the reduction of complex oxides has been widely reported, few reports exist on the modulation of physical properties through a direct hydrogenation process. Here, we report an unusual mechanism for hydrogen-induced topotactic phase transitions in perovskite La0.7Sr0.3CoO3 thin films. Hydrogenation is performed upon annealing in a pure hydrogen gas environment, offering a direct understanding of the role that hydrogen plays at the atomic scale in these transitions. Topotactic phase transformations from the perovskite (P) to hydrogenated-brownmillerite (H-BM) phase can be induced at temperatures as low as 220 °C, while at higher hydrogenation temperatures (320-400 °C), the progression toward more reduced phases is hindered. Density functional theory calculations suggest that hydroxyl bonds are formed with the introduction of hydrogen ions, which lower the formation energy of oxygen vacancies of the neighboring oxygen, enabling the transition from the P to H-BM phase at low temperatures. Furthermore, the impact on the magnetic and electronic properties of the hydrogenation temperature is investigated. Our research provides a potential pathway for utilizing hydrogen as a basis for low-temperature modulation of complex oxide thin films, with potential applications in neuromorphic computing.
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Affiliation(s)
- Mingzhen Feng
- Department
of Materials Science and Engineering, University
of California Davis, Davis, California 95616, United States
| | - Junjie Li
- Department
of Physics, University of California San
Diego, La Jolla, California 92093, United States
- Materials
Science and Engineering Program, University
of California San Diego, La Jolla, California 92093, United States
| | - Shenli Zhang
- Materials
Science Division, Lawrence Livermore National
Laboratory, Livermore, California 94550, United States
| | - Alexandre Pofelski
- Condensed
Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Ralph El Hage
- Department
of Physics, University of California San
Diego, La Jolla, California 92093, United States
| | - Christoph Klewe
- Advanced
Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Alpha T. N’diaye
- Advanced
Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Padraic Shafer
- Advanced
Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Yimei Zhu
- Condensed
Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Giulia Galli
- Pritzker
School of Molecular Engineering, University
of Chicago, Chicago, Illinois 60637, United
States
| | - Ivan K. Schuller
- Department
of Physics, University of California San
Diego, La Jolla, California 92093, United States
- Materials
Science and Engineering Program, University
of California San Diego, La Jolla, California 92093, United States
| | - Yayoi Takamura
- Department
of Materials Science and Engineering, University
of California Davis, Davis, California 95616, United States
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2
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Han H, Sharma A, Yoon J, Wang Z, Körner C, Deniz H, Sharma AK, Li F, Sturm C, Woltersdorf G, Parkin SSP. All-Oxide Metasurfaces Formed by Synchronized Local Ionic Gating. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2401064. [PMID: 38739090 DOI: 10.1002/adma.202401064] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/21/2024] [Revised: 04/20/2024] [Indexed: 05/14/2024]
Abstract
Ionic gating of oxide thin films has emerged as a novel way of manipulating the properties of thin films. Most studies are carried out on single devices with a three-terminal configuration, but, by exploring the electrokinetics during the ionic gating, such a configuration with initially insulating films leads to a highly non-uniform gating response of individual devices within large arrays of the devices. It is shown that such an issue can be circumvented by the formation of a uniform charge potential by the use of a thin conducting underlayer. This synchronized local ionic gating allows for the simultaneous manipulation of the electrical, magnetic, and/or optical properties of large arrays of devices. Designer metasurfaces formed in this way from SrCoO2.5 thin films display an anomalous optical reflection of light that relies on the uniform and coherent response of all the devices. Beyond oxides, almost any material whose properties can be controlled by the addition or removal of ions via gating can form novel metasurfaces using this technique. These findings provide insights into the electrokinetics of ionic gating and a wide range of applications using synchronized local ionic gating.
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Affiliation(s)
- Hyeon Han
- Nano Systems from Ions, Spins, and Electrons (NISE), Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
| | - Arpit Sharma
- Nano Systems from Ions, Spins, and Electrons (NISE), Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
| | - Jiho Yoon
- Nano Systems from Ions, Spins, and Electrons (NISE), Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
| | - Zhong Wang
- Nano Systems from Ions, Spins, and Electrons (NISE), Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
| | - Chris Körner
- Institute of Physics, Martin-Luther Universität Halle-Wittenberg, 06120, Halle (Saale), Germany
| | - Hakan Deniz
- Nano Systems from Ions, Spins, and Electrons (NISE), Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
| | - Ankit K Sharma
- Nano Systems from Ions, Spins, and Electrons (NISE), Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
| | - Fan Li
- Nano Systems from Ions, Spins, and Electrons (NISE), Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
| | - Chris Sturm
- Felix Bloch Institute for Solid State Physics, Universität Leipzig, 04103, Leipzig, Germany
| | - Georg Woltersdorf
- Institute of Physics, Martin-Luther Universität Halle-Wittenberg, 06120, Halle (Saale), Germany
| | - Stuart S P Parkin
- Nano Systems from Ions, Spins, and Electrons (NISE), Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
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3
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Shimizu T, Wang H, Wakamatsu K, Ohkata S, Tanifuji N, Yoshikawa H. Electrochemically driven physical properties of solid-state materials: action mechanisms and control schemes. Dalton Trans 2024. [PMID: 39041779 DOI: 10.1039/d4dt01532k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/24/2024]
Abstract
The various physical properties recently induced by solid-state electrochemical reactions must be comprehensively understood, and their mechanisms of action should be elucidated. Reversible changes in conductivity, magnetism, and colour have been achieved by combining the redox reactions of d metal ions and organic materials, as well as the molecular and crystal structures of solids. This review describes the electrochemically driven physical properties of conductors, magnetic materials, and electrochromic materials using various electrochemical devices.
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Affiliation(s)
- Takeshi Shimizu
- Chemistry and Biochemistry Division, Department of Integrated Engineering, National Institute of Technology, Yonago College, 4448 Hikona-cho, Yonago, Tottori 683-8502, Japan.
| | - Heng Wang
- College of New Energy, Zhengzhou University of Light Industry, Zhengzhou 450002, P. R. China
| | - Katsuhiro Wakamatsu
- Department of Materials Science, School of Engineering Kwansei Gakuin University, Gakuen 2-1, Sanda 669-1337, Japan.
| | - Shunsuke Ohkata
- Department of Materials Science, School of Engineering Kwansei Gakuin University, Gakuen 2-1, Sanda 669-1337, Japan.
| | - Naoki Tanifuji
- Chemistry and Biochemistry Division, Department of Integrated Engineering, National Institute of Technology, Yonago College, 4448 Hikona-cho, Yonago, Tottori 683-8502, Japan.
| | - Hirofumi Yoshikawa
- Department of Materials Science, School of Engineering Kwansei Gakuin University, Gakuen 2-1, Sanda 669-1337, Japan.
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4
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Shin Y, Poeppelmeier KR, Rondinelli JM. Informatics-Based Learning of Oxygen Vacancy Ordering Principles in Oxygen-Deficient Perovskites. Inorg Chem 2024; 63:12785-12802. [PMID: 38954760 DOI: 10.1021/acs.inorgchem.4c01198] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/04/2024]
Abstract
Ordered oxygen vacancies (OOVs) in perovskites can exhibit long-range order and may be used to direct materials properties through modifications in electronic structures and broken symmetries. Based on the various vacancy patterns observed in previously known compounds, we explore the ordering principles of oxygen-deficient perovskite oxides with ABO2.5 stoichiometry to identify other OOV variants. We performed first-principles calculations to assess the OOV stability on a data set of 50 OOV structures generated from our bespoke algorithm. The algorithm employs uniform planar vacancy patterns on (111) pseudocubic perovskite layers and the approach proves effective for generating stable OOV patterns with minimal computational loads. We find as expected that the major factors determining the stability of OOV structures include coordination preferences of transition metals and elastic penalties resulting from the assemblies of polyhedra. Cooperative rotational modes of polyhedra within the OOV structures reduce elastic instabilities by optimizing the bond valence of A- and B cations. This finding explains the observed formation of vacancy channels along low-index crystallographic directions in prototypical OOV phases. The identified ordering principles enable us to devise other stable vacancy patterns with longer periodicity for targeted property design in yet to be synthesized compounds.
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Affiliation(s)
- Yongjin Shin
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
| | - Kenneth R Poeppelmeier
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
| | - James M Rondinelli
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
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5
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Sim H, Doh KY, Park Y, Song K, Kim GY, Son J, Lee D, Choi SY. Crystallographic Pathways to Tailoring Metal-Insulator Transition through Oxygen Transport in VO 2. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2402260. [PMID: 38982949 DOI: 10.1002/smll.202402260] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/29/2024] [Revised: 06/07/2024] [Indexed: 07/11/2024]
Abstract
The metal-insulator (MI) transition of vanadium dioxide (VO2) is effectively modulated by oxygen vacancies, which decrease the transition temperature and insulating resistance. Oxygen vacancies in thin films can be driven by oxygen transport using electrochemical potential. This study delves into the role of crystallographic channels in VO2 in facilitating oxygen transport and the subsequent tuning of electrical properties. A model system is designed with two types of VO2 thin films: (100)- and (001)-oriented, where channels align parallel and perpendicular to the surface, respectively. Growing an oxygen-deficient TiO2 layer on these VO2 films prompted oxygen transport from VO2 to TiO2. Notably, in (001)-VO2 film, where oxygen ions move along the open channels, the oxygen migration deepens the depleted region beyond that in (100)-VO2, leading to more pronounced changes in metal-insulator transition behaviors. The findings emphasize the importance of understanding the intrinsic crystal structure, such as channel pathways, in controlling ionic defects and customizing electrical properties for applications.
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Affiliation(s)
- Hyeji Sim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Kyung-Yeon Doh
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Yunkyu Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Kyung Song
- Materials Characterization Center, Korea Institute of Materials Science, Changwon, 51508, Republic of Korea
| | - Gi-Yeop Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Junwoo Son
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Donghwa Lee
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Si-Young Choi
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
- Center of Van der Waals Quantum Solids, Institute for Basic Science (IBS) Pohang, Pohang, 37673, Republic of Korea
- Department of Semiconductor Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
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6
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Postiglione WM, Yu G, Chaturvedi V, Zhou H, Heltemes K, Jacobson A, Greven M, Leighton C. Mechanisms of Hysteresis and Reversibility across the Voltage-Driven Perovskite-Brownmillerite Transformation in Electrolyte-Gated Ultrathin La 0.5Sr 0.5CoO 3-δ. ACS APPLIED MATERIALS & INTERFACES 2024; 16:19184-19197. [PMID: 38564510 DOI: 10.1021/acsami.4c01336] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/04/2024]
Abstract
Perovskite cobaltites have emerged as archetypes for electrochemical control of materials properties in electrolyte-gate devices. Voltage-driven redox cycling can be performed between fully oxygenated perovskite and oxygen-vacancy-ordered brownmillerite phases, enabling exceptional modulation of the crystal structure, electronic transport, thermal transport, magnetism, and optical properties. The vast majority of studies, however, have focused heavily on the perovskite and brownmillerite end points. In contrast, here we focus on hysteresis and reversibility across the entire perovskite ↔ brownmillerite topotactic transformation, combining gate-voltage hysteresis loops, minor hysteresis loops, quantitative operando synchrotron X-ray diffraction, and temperature-dependent (magneto)transport, on ion-gel-gated ultrathin (10-unit-cell) epitaxial La0.5Sr0.5CoO3-δ films. Gate-voltage hysteresis loops combined with operando diffraction reveal a wealth of new mechanistic findings, including asymmetric redox kinetics due to differing oxygen diffusivities in the two phases, nonmonotonic transformation rates due to the first-order nature of the transformation, and limits on reversibility due to first-cycle structural degradation. Minor loops additionally enable the first rational design of an optimal gate-voltage cycle. Combining this knowledge, we demonstrate state-of-the-art nonvolatile cycling of electronic and magnetic properties, encompassing >105 transport ON/OFF ratios at room temperature, and reversible metal-insulator-metal and ferromagnet-nonferromagnet-ferromagnet cycling, all at 10-unit-cell thickness with high room-temperature stability. This paves the way for future work to establish the ultimate cycling frequency and endurance of such devices.
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Affiliation(s)
- William M Postiglione
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Guichuan Yu
- Minnesota Supercomputing Institute, University of Minnesota, Minneapolis, Minnesota 55455, United States
- Characterization Facility, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Vipul Chaturvedi
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Hua Zhou
- Advanced Photon Source, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Kei Heltemes
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Andrew Jacobson
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Martin Greven
- School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Chris Leighton
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States
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7
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Yang Z, Wang L, Dhas JA, Engelhard MH, Bowden ME, Liu W, Zhu Z, Wang C, Chambers SA, Sushko PV, Du Y. Guided anisotropic oxygen transport in vacancy ordered oxides. Nat Commun 2023; 14:6068. [PMID: 37770428 PMCID: PMC10539514 DOI: 10.1038/s41467-023-40746-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/26/2022] [Accepted: 08/07/2023] [Indexed: 09/30/2023] Open
Abstract
Anisotropic and efficient transport of ions under external stimuli governs the operation and failure mechanisms of energy-conversion systems and microelectronics devices. However, fundamental understanding of ion hopping processes is impeded by the lack of atomically precise materials and probes that allow for the monitoring and control at the appropriate time- and length- scales. In this work, using in-situ transmission electron microscopy, we directly show that oxygen ion migration in vacancy ordered, semiconducting SrFeO2.5 epitaxial thin films can be guided to proceed through two distinctly different diffusion pathways, each resulting in different polymorphs of SrFeO2.75 with different ground electronic properties before reaching a fully oxidized, metallic SrFeO3 phase. The diffusion steps and reaction intermediates are revealed by means of ab-initio calculations. The principles of controlling oxygen diffusion pathways and reaction intermediates demonstrated here may advance the rational design of structurally ordered oxides for tailored applications and provide insights for developing devices with multiple states of regulation.
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Affiliation(s)
- Zhenzhong Yang
- Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, WA, 99354, USA
- Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai, 200241, P. R. China
| | - Le Wang
- Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, WA, 99354, USA
| | - Jeffrey A Dhas
- School of Chemical, Biological and Environmental Engineering, Oregon State University, Corvallis, OR, 97331, USA
- Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, WA, 99354, USA
| | - Mark H Engelhard
- Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, WA, 99354, USA
| | - Mark E Bowden
- Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, WA, 99354, USA
| | - Wen Liu
- Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, WA, 99354, USA
- State Key Laboratory of Biogeology and Environmental Geology, China University of Geosciences, Wuhan, 430074, China
| | - Zihua Zhu
- Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, WA, 99354, USA
| | - Chongmin Wang
- Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, WA, 99354, USA
| | - Scott A Chambers
- Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, WA, 99354, USA
| | - Peter V Sushko
- Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, WA, 99354, USA.
| | - Yingge Du
- Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, WA, 99354, USA.
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8
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Han H, Jacquet Q, Jiang Z, Sayed FN, Jeon JC, Sharma A, Schankler AM, Kakekhani A, Meyerheim HL, Park J, Nam SY, Griffith KJ, Simonelli L, Rappe AM, Grey CP, Parkin SSP. Li iontronics in single-crystalline T-Nb 2O 5 thin films with vertical ionic transport channels. NATURE MATERIALS 2023; 22:1128-1135. [PMID: 37500959 PMCID: PMC10465368 DOI: 10.1038/s41563-023-01612-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/13/2022] [Accepted: 06/19/2023] [Indexed: 07/29/2023]
Abstract
The niobium oxide polymorph T-Nb2O5 has been extensively investigated in its bulk form especially for applications in fast-charging batteries and electrochemical (pseudo)capacitors. Its crystal structure, which has two-dimensional (2D) layers with very low steric hindrance, allows for fast Li-ion migration. However, since its discovery in 1941, the growth of single-crystalline thin films and its electronic applications have not yet been realized, probably due to its large orthorhombic unit cell along with the existence of many polymorphs. Here we demonstrate the epitaxial growth of single-crystalline T-Nb2O5 thin films, critically with the ionic transport channels oriented perpendicular to the film's surface. These vertical 2D channels enable fast Li-ion migration, which we show gives rise to a colossal insulator-metal transition, where the resistivity drops by 11 orders of magnitude due to the population of the initially empty Nb 4d0 states by electrons. Moreover, we reveal multiple unexplored phase transitions with distinct crystal and electronic structures over a wide range of Li-ion concentrations by comprehensive in situ experiments and theoretical calculations, which allow for the reversible and repeatable manipulation of these phases and their distinct electronic properties. This work paves the way for the exploration of novel thin films with ionic channels and their potential applications.
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Affiliation(s)
- Hyeon Han
- Max Planck Institute of Microstructure Physics, Halle (Saale), Germany.
| | - Quentin Jacquet
- Yusuf Hamied Department of Chemistry, University of Cambridge, Cambridge, UK
- Univ. Grenoble Alpes, CEA, CNRS, IRIG, SyMMES, Grenoble, France
| | - Zhen Jiang
- Department of Chemistry, University of Pennsylvania, Philadelphia, PA, USA
| | - Farheen N Sayed
- Yusuf Hamied Department of Chemistry, University of Cambridge, Cambridge, UK
| | - Jae-Chun Jeon
- Max Planck Institute of Microstructure Physics, Halle (Saale), Germany
| | - Arpit Sharma
- Max Planck Institute of Microstructure Physics, Halle (Saale), Germany
| | - Aaron M Schankler
- Department of Chemistry, University of Pennsylvania, Philadelphia, PA, USA
| | - Arvin Kakekhani
- Department of Chemistry, University of Pennsylvania, Philadelphia, PA, USA
| | | | - Jucheol Park
- Test Analysis Research Center, Gumi Electronics and Information Technology Research Institute, Gumi, Republic of Korea
| | - Sang Yeol Nam
- Test Analysis Research Center, Gumi Electronics and Information Technology Research Institute, Gumi, Republic of Korea
| | - Kent J Griffith
- Department of Chemistry, Northwestern University, Evanston, IL, USA
| | - Laura Simonelli
- ALBA Synchrotron Light Source, Cerdanyola del Vallès, Barcelona, Spain
| | - Andrew M Rappe
- Department of Chemistry, University of Pennsylvania, Philadelphia, PA, USA.
| | - Clare P Grey
- Yusuf Hamied Department of Chemistry, University of Cambridge, Cambridge, UK.
| | - Stuart S P Parkin
- Max Planck Institute of Microstructure Physics, Halle (Saale), Germany.
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9
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Han H, Deniz H, Parkin SSP. Strain-driven formation of epitaxial nanostructures in brownmillerite strontium cobaltite thin films. Proc Natl Acad Sci U S A 2023; 120:e2221651120. [PMID: 36913577 PMCID: PMC10041114 DOI: 10.1073/pnas.2221651120] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/29/2022] [Accepted: 02/09/2023] [Indexed: 03/15/2023] Open
Abstract
Nanostructured materials can display unique physical properties and are of particular interest for their new functionalities. Epitaxial growth is a promising approach for the controlled synthesis of nanostructures with desired structures and crystallinity. SrCoOx is a particularly intriguing material owing to a topotactic phase transition between an antiferromagnetic insulating brownmillerite SrCoO2.5 (BM-SCO) phase and a ferromagnetic metallic perovskite SrCoO3-δ (P-SCO) phase depending on the oxygen concentration. Here, we present the formation and control of epitaxial BM-SCO nanostructures by substrate-induced anisotropic strain. Perovskite substrates with a (110)-orientation and which allow for compressive strain result in the creation of BM-SCO nanobars, while (111)-oriented substrates give rise to the formation of BM-SCO nanoislands. We have found that substrate-induced anisotropic strain coupled with the orientation of crystalline domains determines the shape and facet of the nanostructures, while their size can be tuned by the degree of strain. Moreover, the nanostructures can be transformed between antiferromagnetic BM-SCO and ferromagnetic P-SCO via ionic liquid gating. Thus, this study provides insights into the design of epitaxial nanostructures whose structure and physical properties can be readily controlled.
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Affiliation(s)
- Hyeon Han
- Max Planck Institute of Microstructure Physics, Halle (Saale)06120, Germany
| | - Hakan Deniz
- Max Planck Institute of Microstructure Physics, Halle (Saale)06120, Germany
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10
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Han H, Zhou H, Guillemard C, Valvidares M, Sharma A, Li Y, Sharma AK, Kostanovskiy I, Ernst A, Parkin SSP. Reversal of Anomalous Hall Effect and Octahedral Tilting in SrRuO 3 Thin Films via Hydrogen Spillover. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2207246. [PMID: 36271718 DOI: 10.1002/adma.202207246] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/09/2022] [Revised: 09/18/2022] [Indexed: 06/16/2023]
Abstract
The perovskite SrRuO3 (SRO) is a strongly correlated oxide whose physical and structural properties are strongly intertwined. Notably, SRO is an itinerant ferromagnet that exhibits a large anomalous Hall effect (AHE) whose sign can be readily modified. Here, a hydrogen spillover method is used to tailor the properties of SRO thin films via hydrogen incorporation. It is found that the magnetization and Curie temperature of the films are strongly reduced and, at the same time, the structure evolves from an orthorhombic to a tetragonal phase as the hydrogen content is increased up to ≈0.9 H per SRO formula unit. The structural phase transition is shown, via in situ crystal truncation rod measurements, to be related to tilting of the RuO6 octahedral units. The significant changes observed in magnetization are shown, via density functional theory (DFT), to be a consequence of shifts in the Fermi level. The reported findings provide new insights into the physical properties of SRO via tailoring its lattice symmetry and emergent physical phenomena via the hydrogen spillover technique.
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Affiliation(s)
- Hyeon Han
- Nano Systems from Ions, Spins, and Electrons (NISE), Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
| | - Hua Zhou
- Advanced Photon Source, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Charles Guillemard
- ALBA Synchrotron Light Source, Cerdanyola del Vallès, Barcelona, E-08290, Spain
| | - Manuel Valvidares
- ALBA Synchrotron Light Source, Cerdanyola del Vallès, Barcelona, E-08290, Spain
| | - Arpit Sharma
- Nano Systems from Ions, Spins, and Electrons (NISE), Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
| | - Yan Li
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Ankit K Sharma
- Nano Systems from Ions, Spins, and Electrons (NISE), Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
| | - Ilya Kostanovskiy
- Nano Systems from Ions, Spins, and Electrons (NISE), Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
| | - Arthur Ernst
- Nano Systems from Ions, Spins, and Electrons (NISE), Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
- Institute for Theoretical Physics, Johannes Kepler University, Linz, 4040, Austria
| | - Stuart S P Parkin
- Nano Systems from Ions, Spins, and Electrons (NISE), Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
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11
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Methods and strategies for producing porous photocatalysts: Review. J SOLID STATE CHEM 2023. [DOI: 10.1016/j.jssc.2023.123834] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/09/2023]
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Gu F, Zhang L, Li Z, Zhang J, Pan Y, Li Q, Li H, Qin Y, Li Q. A comparative study of electrochemical and electrostatic doping modulation of magnetism in Fe 3O 4via ultracapacitor structure. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:455802. [PMID: 36044895 DOI: 10.1088/1361-648x/ac8e47] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/16/2022] [Accepted: 08/31/2022] [Indexed: 06/15/2023]
Abstract
Electric field control of magnetism can boost energy efficiency and have brought revolutionary breakthroughs in the development of widespread applications in spintronics. Electrolyte gating plays an important role in magnetism modulation. In this work, reversible room-temperature electric field control of saturation magnetization in Fe3O4via a supercapacitor structure is demonstrated with three types of traditional gate electrolytes for comparison. Different magnetization response and responsible mechanisms are revealed by Operando magnetometry PPMS/VSM and XPS characterization. The main mechanism in Na2SO4, KOH aqueous electrolytes is electrochemical effect, while both electrochemical and electrostatic effects were found in LiPF6organic electrolyte. This work offers a kind of reference basis for selecting appropriate electrolyte in magnetism modulation by electrolyte-gating in the future, meanwhile, paves its way towards practical use in magneto-electric actuation, voltage-assisted magnetic storage, facilitating the development of high-performance spintronic devices.
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Affiliation(s)
- Fangchao Gu
- College of Physics, University-Industry Joint Center for Ocean Observation and Broadband Communication, Qingdao University, Qingdao 266071, People's Republic of China
| | - Leqing Zhang
- College of Physics, University-Industry Joint Center for Ocean Observation and Broadband Communication, Qingdao University, Qingdao 266071, People's Republic of China
| | - Zhaohui Li
- College of Physics, University-Industry Joint Center for Ocean Observation and Broadband Communication, Qingdao University, Qingdao 266071, People's Republic of China
| | - Jie Zhang
- College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, People's Republic of China
| | - Yuanyuan Pan
- College of Physics, University-Industry Joint Center for Ocean Observation and Broadband Communication, Qingdao University, Qingdao 266071, People's Republic of China
| | - Qinghao Li
- College of Physics, University-Industry Joint Center for Ocean Observation and Broadband Communication, Qingdao University, Qingdao 266071, People's Republic of China
| | - Hongsen Li
- College of Physics, University-Industry Joint Center for Ocean Observation and Broadband Communication, Qingdao University, Qingdao 266071, People's Republic of China
| | - Yufeng Qin
- College of Information Science and Engineering, Shandong Agricultural University, Taian, Shandong 271018, People's Republic of China
| | - Qiang Li
- College of Physics, University-Industry Joint Center for Ocean Observation and Broadband Communication, Qingdao University, Qingdao 266071, People's Republic of China
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Zha R, Li C, He L, Zhang M. Two-Dimensional Defective Black Phosphorus/BiVO4 Nanoheterojunctions for Molecular Nitrogen Activation. J Colloid Interface Sci 2022; 628:378-388. [DOI: 10.1016/j.jcis.2022.07.092] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/15/2022] [Revised: 07/06/2022] [Accepted: 07/16/2022] [Indexed: 10/17/2022]
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