Epitaxial Topological Insulator Bi2Te3 for Fast Visible to Mid-Infrared Heterojunction Photodetector by Graphene As Charge Collection Medium

Toward High-Performance Self-Powered Near-Ultraviolet Photodetection by Constructing a Unipolar Heterojunction

Constructing a unipolar heterojunction is an effective energy band engineering strategy to improve the performance of photoelectric devices, which could suppress dark current and enhance detectivity by modulating the transfer of carriers. In this work, unipolar heterojunctions of Si/PbI2 and GaSb/PbI2 are constructed successfully for high-performance self-powered near-ultraviolet photodetection. Owing to the unique band offset of unipolar heterojunctions, the transport of holes is blocked, and only photogenerated electrons in PbI2 can flow unimpeded under the driving force of the built-in electric field. Thus, the recombination of photogenerated electron-hole pairs is suppressed, contributing to high-performance near-ultraviolet photodetection. The as-fabricated Si/PbI2 self-powered near-ultraviolet photodetector exhibits a low dark current of 10-13 A, a high Ilight/Idark ratio of 104, and fast response times of 26/24 ms, which are much better than those of the PbI2 metal-semiconductor-metal photodetector. Furthermore, the as-fabricated GaSb/PbI2 unipolar heterojunction photodetector also exhibits impressive self-powered near-ultraviolet photodetection behaviors. Evidently, this work shows the potential of unipolar heterojunctions for next-generation Si-based and GaSb-based high-performance photodetection.

Defect Engineered Bi2Te3 Nanosheets with Enhanced Haloperoxidase Activity for Marine Antibiofouling

Defective bismuth telluride (Bi2Te3) nanosheets, an artificial nanozyme mimicking haloperoxidase activity (hPOD), show promise as eco-friendly, bactericidal, and antimicrofouling materials by enhancing cytotoxic hypohalous acid production from halides and H2O2. Microscopic and spectroscopic characterization reveals that controlled NaOH (upto X = 250 µL) etching of the nearly inactive non-transition metal chalcogenide Bi2Te3 nanosheets creates controlled defects (d), such as Bi3+species, in d-Bi2Te3-X that induces enhanced hPOD activity. d-Bi2Te3-250 exhibits approximately eight-fold improved hPOD than the as-grown Bi2Te3 nanosheets. The antibacterial activity of d-Bi2Te3-250 nanozymes, studied by bacterial viability, show 1, and 45% viability for Staphylococcus aureus and Pseudomonas aeruginosa, respectively, prevalent in marine environments. The hPOD mechanism is confirmed using scavengers, implicating HOBr and singlet oxygen for the effect. The antimicrofouling property of the d-Bi2Te3-250 nanozyme has been studied on Pseudomonas aeruginosa biofilm in a lab setting by multiple assays, and also on titanium (Ti) plates coated with the nanozyme mixed commercial paint, exposed to seawater in a real setting. All studies, including direct microscopic evidence, exhibit inhibition of microfouling, up to ≈73%, in the presence of nanozymes. This approach showcases that defect engineering can induce antibacterial, and antimicrofouling activity in non-transition metal chalcogenides, offering an inexpensive alternative to noble metals.

Constructing a Stable Built-In Electric Field in Bi/Bi2Te3 Nanowires for Electrochemical CO2 Reduction Reaction

Electrochemically converting carbon dioxide (CO2) into valuable fuels and renewable chemical feedstocks is considered a highly promising approach to achieve carbon neutrality. In this work, a robust interfacial built-in electric field (BEF) has been successfully designed and created in Bi/Bi2Te3 nanowires (NWs). The Bi/Bi2Te3 NWs consistently maintain over 90% Faradaic efficiency (FE) within a wide potential range (-0.8 to -1.2 V), with HCOOH selectivity reaching 97.2% at -1.0 V. Moreover, the FEHCOOH of Bi/Bi2Te3 NWs can still reach 94.3% at a current density of 100 mA cm-2 when it is used as a cathode electrocatalyst in a flow-cell system. Detailed in situ experiments confirm that the presence of interfacial BEF between Bi and Bi/Bi2Te3 promotes the formation of *OHCO intermediates, thus facilitating the production of HCOOH species. DFT calculations show that Bi/Bi2Te3 NWs increase the formation energies of H* and *COOH while reducing the energy barrier for *OCHO formation, thus achieving a bidirectional optimization of intermediate adsorption. This work provides a feasible scheme for exploring electrocatalytic reaction intermediates by using the BEF strategy.

Uncooled Mid-Infrared Sensing Enabled by Chip-Integrated Low-Temperature-Grown 2D PdTe2 Dirac Semimetal

Next-generation mid-infrared (MIR) imaging chips demand free-cooling capability and high-level integration. The rising two-dimensional (2D) semimetals with excellent infrared (IR) photoresponses are compliant with these requirements. However, challenges remain in scalable growth and substrate-dependence for on-chip integration. Here, we demonstrate the inch-level 2D palladium ditelluride (PdTe2) Dirac semimetal using a low-temperature self-stitched epitaxy (SSE) approach. The low formation energy between two precursors facilitates low-temperature multiple-point nucleation (∼300 °C), growing up, and merging, resulting in self-stitching of PdTe2 domains into a continuous film, which is highly compatible with back-end-of-line (BEOL) technology. The uncooled on-chip PdTe2/Si Schottky junction-based photodetector exhibits an ultrabroadband photoresponse of up to 10.6 μm with a large specific detectivity. Furthermore, the highly integrated device array demonstrates high-resolution room-temperature imaging capability, and the device can serve as an optical data receiver for IR optical communication. This study paves the way toward low-temperature growth of 2D semimetals for uncooled MIR sensing.

Room Temperature Broadband Bi2Te3/PbS Colloidal Quantum Dots Infrared Photodetectors

Lead sulfide colloidal quantum dots (PbS CQDs) are promising optoelectronic materials due to their unique properties, such as tunable band gap and strong absorption, which are of immense interest for application in photodetectors and solar cells. However, the tunable band gap of PbS CQDs would only cover visible short-wave infrared; the ability to detect longer wavelengths, such as mid- and long-wave infrared, is limited because they are restricted by the band gap of the bulk material. In this paper, a novel photodetector based on the synergistic effect of PbS CQDs and bismuth telluride (Bi₂Te₃) was developed for the detection of a mid-wave infrared band at room temperature. The device demonstrated good performance in the visible-near infrared band (i.e., between 660 and 850 nm) with detectivity of 1.6 × 10¹⁰ Jones at room temperature. It also exhibited photoelectric response in the mid-wave infrared band (i.e., between 4.6 and 5.1 μm). The facile fabrication process and excellent performance (with a response of up to 5.1 μm) of the hybrid Bi₂Te₃/PbS CQDS photodetector are highly attractive for many important applications that require high sensitivity and broadband light detection.

Ferroelectrically Modulated and Enhanced Photoresponse in a Self-Powered α-In2Se3/Si Heterojunction Photodetector

Photodetectors have been applied to pivotal optoelectronic components of modern optical communication, sensing, and imaging systems. As a room-temperature ferroelectric van der Waals semiconductor, 2D α-In₂Se₃ is a promising candidate for a next-generation optoelectronic material because of its thickness-dependent direct bandgap and excellent optoelectronic performance. Previous studies of photodetectors based on α-In₂Se₃ have been rarely focused on the modulated relationship between the α-In₂Se₃ intrinsic ferroelectricity and photoresponsivity. Herein, a simple integrated process and high-performance photodetector based on an α-In₂Se₃/Si vertical hybrid-dimensional heterojunction was constructed. Our photodetector in the ferroelectric polarization up state accomplishes a self-powered, highly sensitive photoresponse with an on/off ratio of 4.5 × 10⁵ and detectivity of 1.6 × 10¹³ Jones, and it also shows a fast response time with 43 μs. The depolarization field generated by the remanent polarization of ferroelectrics in α-In₂Se₃ provides a strategy for enhancement and modulation of photodetection. The negative correlation was discovered because the enhancement photoresponsivity factor of ferroelectric modulation competes with the photovoltaic behavior within the α-In₂Se₃/Si heterojunction. Our research highlights the great potential of the high-efficiency heterojunction photodetector for future object recognition and photoelectric imaging.

High Performance Graphene-C60 -Bismuth Telluride-C60 -Graphene Nanometer Thin Film Phototransistor with Adjustable Positive and Negative Responses

Graphene is a promising candidate for the next-generation infrared array image sensors at room temperature due to its high mobility, tunable energy band, wide band absorption, and compatibility with complementary metal oxide semiconductor process. However, it is difficult to simultaneously obtain ultrafast response time and ultrahigh responsivity, which limits the further improvement of graphene photoconductive devices. Here, a novel graphene/C₆₀ /bismuth telluride/C₆₀ /graphene vertical heterojunction phototransistor is proposed. The response spectral range covers 400-1800 nm; the responsivity peak is 10⁶ A W^-1 ; and the peak detection rate and peak response speed reach 10¹⁴ Jones and 250 µs, respectively. In addition, the regulation of positive and negative photocurrents at a gate voltage is characterized and the ionization process in impurities of the designed phototransistor at a low temperature is analyzed. Tunable bidirectional response provides a new degree of freedom for phototransistors' signal resolution. The analysis of the dynamic change process of impurity energy level is conducted to improve the device's performance. From the perspective of manufacturing process, the ultrathin phototransistor (20-30 nm) is compatible with functional metasurface to realize wavelength or polarization selection, making it possible to achieve large-scale production of integrated spectrometer or polarization imaging sensor by nanoimprinting process.

2D Ruddlesden-Popper perovskite sensitized SnP2S6 ultraviolet photodetector enabling high responsivity and fast speed

As the newly developed wide-bandgap semiconductors, two-dimensional layered metal phosphorus chalcogenides (2D LMPCs) exhibit enormous potential applications in ultraviolet (UV) photodetection due to their superior optoelectronic performance. However, 2D LMPC-based UV photodetectors generally suffer from low responsivity and slow response speed, which hinder their practical applications. Here, we present an effective strategy of sensitizing 2D LMPC UV photodetectors with a 2D Ruddlesden-Popper (RP) perovskite to enable high responsivity and fast response speed. As a demonstration, a hybrid heterojunction composed of RP perovskite (PEA)₂PbI₄ and a 2D SnP₂S₆ flake is fabricated by spin-coating method. Benefitting from the strong optical absorption of (PEA)₂PbI₄ and the efficient interfacial charge transfer caused by the favorable type-II energy band alignment, the as-fabricated 2D SnP₂S₆/(PEA)₂PbI₄ hybrid heterojunction photodetectors show high responsivity (67.1 A W^-1), large detectivity (2.8 × 10¹¹ Jones), fast rise/delay time (30/120 μs) and excellent external quantum efficiency (22825%) at 365 nm. Under field-effect modulation, the responsivity of the heterojunction photodetector can reach up to 239.4 A W^-1, which is attributed to the photogating mechanism and reduced Schottky barriers. Owing to the excellent photodetection performance, the heterojunction device further shows superior imaging capability. This work provides an effective strategy for designing high-performance UV photodetectors toward future applications.

Photodetection and Infrared Imaging Based on Cd3As2 Epitaxial Vertical Heterostructures

Due to the nontrivial electronic structure, Cd₃As₂ is predicted to possess various transport properties and outstanding photoresponses. Photodetectors based on topological materials are mostly made up of nanoplates, yet monolithic in situ heteroepitaxial Cd₃As₂ photodetectors are rarely reported to date owing to the crystal mismatch between Cd₃As₂ and semiconductors. Here, we demonstrate Cd₃As₂/Zn_xCd_1-xTe/GaSb vertical heteroepitaxial photodetectors via molecule beam epitaxy. By constructing dual-Schottky junctions, these photodetectors show high responsivity and external quantum efficiency in a broadband spectrum. Based on the strong and fast photoresponse, we achieved visible light to near-infrared imaging using a one-pixel imaging system with a galvo. Our results illustrate that the integration of three-dimensional Dirac semimetal Cd₃As₂ with semiconductors has potential applications in broadband photodetection and infrared cameras.