Generation and Detection of Strain-Localized Excitons in WS2 Monolayer by Plasmonic Metal Nanocrystals

Electronic properties of MoSe2 nanowrinkles

Mechanical deformations, either spontaneously occurring during sample preparation or purposely induced in their nanoscale manipulation, drastically affect the electronic and optical properties of transition metal dichalcogenide monolayers. In this first-principles work based on density-functional theory, we shed light on the interplay among strain, curvature, and electronic structure of MoSe2 nanowrinkles. We analyze their structural properties highlighting the effects of coexisting local domains of tensile and compressive strain in the same system. By contrasting the band structures of the nanowrinkles against counterparts obtained for flat monolayers subject to the same amount of strain, we clarify that the specific features of the former, such as the moderate variation of the band-gap size and its persisting direct nature, are ruled by curvature rather than strain. The analysis of the wave-function distribution indicates strain-dependent localization of the frontier states in the conduction region while in the valence, the sensitivity to strain is much less pronounced. The discussion about transport properties, based on inspection of the effective masses, reveals excellent perspectives for these systems as active components for (opto)electronic devices.

New Nanophotonics Approaches for Enhancing the Efficiency and Stability of Perovskite Solar Cells

Over the past decade, the power conversion efficiency (PCE) of perovskite solar cells (PSCs) has experienced a remarkable ascent, soaring from 3.8% in 2009 to a remarkable record of 26.1% in 2023. Many recent approaches for improving PSC performance employ nanophotonic technologies, from light harvesting and thermal management to the manipulation of charge carrier dynamics. Plasmonic nanoparticles and arrayed dielectric nanostructures have been applied to tailor the light absorption, scattering, and conversion, as well as the heat dissipation within PSCs to improve their PCE and operational stability. In this review, it is begin with a concise introduction to define the realm of nanophotonics by focusing on the nanoscale interactions between light and surface plasmons or dielectric photonic structures. Prevailing strategies that utilize resonance-enhanced light-matter interactions for boosting the PCE and stability of PSCs from light trapping, carrier transportation, and thermal management perspectives are then elaborated, and the resultant practical applications, such as semitransparent photovoltaics, colored PSCs, and smart perovskite windows are discussed. Finally, the state-of-the-art nanophotonic paradigms in PSCs are reviewed, and the benefits of these approaches in improving the aesthetic effects and energy-saving character of PSC-integrated buildings are highlighted.

Recent Strategies for the Synthesis of Phase-Pure Ultrathin 1T/1T' Transition Metal Dichalcogenide Nanosheets

The past few decades have witnessed a notable increase in transition metal dichalcogenide (TMD) related research not only because of the large family of TMD candidates but also because of the various polytypes that arise from the monolayer configuration and layer stacking order. The peculiar physicochemical properties of TMD nanosheets enable an enormous range of applications from fundamental science to industrial technologies based on the preparation of high-quality TMDs. For polymorphic TMDs, the 1T/1T' phase is particularly intriguing because of the enriched density of states, and thus facilitates fruitful chemistry. Herein, we comprehensively discuss the most recent strategies for direct synthesis of phase-pure 1T/1T' TMD nanosheets such as mechanical exfoliation, chemical vapor deposition, wet chemical synthesis, atomic layer deposition, and more. We also review frequently adopted methods for phase engineering in TMD nanosheets ranging from chemical doping and alloying, to charge injection, and irradiation with optical or charged particle beams. Prior to the synthesis methods, we discuss the configuration of TMDs as well as the characterization tools mostly used in experiments. Finally, we discuss the current challenges and opportunities as well as emphasize the promising fields for the future development.

Celebrating 60 Years of The Chinese University of Hong Kong: Research Highlights in Nanoscience and Nanotechnology

Recent breakthroughs and advances in nanoscience and nanotechnology have profoundly impacted young-generation education, accelerated knowledge transfer to enhance the quality of life, and improved environmental and economic sustainability. The Chinese University of Hong Kong (CUHK), a globally recognized education and research institute, has played a crucial role in promoting major strategic research directions in nanoscience, including translational biomedicine and information and automation technology, as well as environment and sustainability. To celebrate the 60th Anniversary of CUHK, we present this Virtual Issue that showcases the cutting-edge research at CUHK published in ACS Nano.

Decoding the Self-Assembly Plasmonic Interface Structure in a PbS Colloidal Quantum Dot Solid for a Photodetector

Hybrid plasmonic nanostructures have gained enormous attention in a variety of optoelectronic devices due to their surface plasmon resonance properties. Self-assembled hybrid metal/quantum dot (QD) architectures offer a means of coupling the properties of plasmonics and QDs to photodetectors, thereby modifying their functionality. The arrangement and localization of hybrid nanostructures have an impact on exciton trapping and light harvesting. Here, we present a hybrid structure consisting of self-assembled gold nanospheres (Au NSs) embedded in a solid matrix of PbS QDs for mapping the interface structures and the motion of charge carriers. Grazing-incidence small-angle X-ray scattering is utilized to analyze the localization and spacing of the Au NSs within the hybrid structure. Furthermore, by correlating the morphology of the Au NSs in the hybrid structure with the corresponding differences observed in the performance of photodetectors, we are able to determine the impact of interface charge carrier dynamics in the coupling structure. From the perspective of architecture, our study provides insights into the performance improvement of optoelectronic devices.

Unusual Defect-Related Room-Temperature Emission from WS2 Monolayers Synthesized through a Potassium-Based Precursor

Alkali-metal-based synthesis of transition metal dichalcogenide (TMD) monolayers is an established strategy for both ultralarge lateral growth and promoting the metastable 1T phase. However, whether this can also lead to modified optical properties is underexplored, with reported photoluminescence (PL) spectra from semiconducting systems showing little difference from more traditional syntheses. Here, we show that the growth of WS2 monolayers from a potassium-salt precursor can lead to a pronounced low-energy emission in the PL spectrum. This is seen 200-300 meV below the A exciton and can dominate the signal at room temperature. The emission is spatially heterogeneous, and its presence is attributed to defects in the layer due to sublinear intensity power dependence, a noticeable aging effect, and insensitivity to washing in water and acetone. Interestingly, statistical analysis links the band to an increase in the width of the A1g Raman band. The emission can be controlled by altering when hydrogen is introduced into the growth process. This work demonstrates intrinsic and intense defect-related emission at room temperature and establishes further opportunities for tuning TMD properties through alkali-metal precursors.

Insights into electronic properties of strained two-dimensional semiconductors by out-of-plane bending

Strain engineering is an important strategy to modulate the electronic and optical properties of two-dimensional (2D) semiconductors. In experiments, an effective and feasible method to induce strains on 2D semiconductors is the out-of-plane bending. However, in contrast to the in-plane methods, it will generate a combined strain effect on 2D semiconductors, which deserves further explorations. In this work, we theoretically investigate the carrier transport-related electronic properties of arsenene, antimonene, phosphorene, and MoS₂under the out-of-plane bending. The bending effect can be disassembled into the in-plane and out-of-plane rolling strains. We find that the rolling always degrades the transport performance, while the in-plane strain could boost carrier mobilities by restraining the intervalley scattering. In other words, pursuing the maximum in-plane strain at the expense of minimum rolling should be the primary strategy to promote transports in 2D semiconductors through bending. Electrons in 2D semiconductors usually suffer from the serious intervalley scattering caused by optical phonons. The in-plane strain can break the crystal symmetry and separate nonequivalent energy valleys at band edges energetically, confining carrier transports at the Brillouin zone Γ point and eliminating the intervalley scattering. Investigation results show that the arsenene and antimonene are suitable for the bending technology, because of their small layer thicknesses which can relieve the rolling burden. Their electron and hole mobilities can be doubled simultaneously, compared with their unstrained 2D structures. From this study, the rules for the out-of-plane bending technology towards promoting transport abilities in 2D semiconductors are obtained.