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Zhang B, Ao Z, Lan X, Zhong J, Zhang F, Zhang S, Yang R, Wang L, Chen P, Wang G, Yang X, Liu H, Cao J, Zhong M, Li H, Zhang Z. Self-Rolled-Up WSe 2 One-Dimensional/Two-Dimensional Homojunctions: Enabling High-Performance Self-Powered Polarization-Sensitive Photodetectors. NANO LETTERS 2024; 24:7716-7723. [PMID: 38848111 DOI: 10.1021/acs.nanolett.4c01745] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/27/2024]
Abstract
Mixed-dimensional heterostructures integrate materials of diverse dimensions with unique electronic functionalities, providing a new platform for research in electron transport and optoelectronic detection. Here, we report a novel covalently bonded one-dimensional/two-dimensional (1D/2D) homojunction structure with robust junction contacts, which exhibits wide-spectrum (from the visible to near-infrared regions), self-driven photodetection, and polarization-sensitive photodetection capabilities. Benefiting from the ultralow dark current at zero bias voltage, the on/off ratio and detectivity of the device reach 1.5 × 103 and 3.24 × 109 Jones, respectively. Furthermore, the pronounced anisotropy of the WSe2 1D/2D homojunction is attributed to its low symmetry, enabling polarization-sensitive detection. In the absence of any external bias voltage, the device exhibits strong linear dichroism for wavelengths of 638 and 808 nm, with anisotropy ratios of 2.06 and 1.96, respectively. These results indicate that such mixed-dimensional structures can serve as attractive building blocks for novel optoelectronic detectors.
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Affiliation(s)
- Baihui Zhang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, P. R. China
| | - Zhikang Ao
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, P. R. China
| | - Xiang Lan
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, P. R. China
| | - Jiang Zhong
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, P. R. China
| | - Fen Zhang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, P. R. China
| | - Shunhui Zhang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, P. R. China
| | - Ruofan Yang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, P. R. China
| | - Luyao Wang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, P. R. China
| | - Peng Chen
- School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, P. R. China
| | - Guang Wang
- Department of Physics, College of Sciences, National University of Defense Technology, Changsha 410073, P. R. China
| | - Xiangdong Yang
- Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo 315211, P. R. China
| | - Hang Liu
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
| | - Jinhui Cao
- College of Energy and Power Engineering, Changsha University of Science and Technology, Changsha 410114, P. R. China
| | - Mianzeng Zhong
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, P. R. China
| | - Hongjian Li
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, P. R. China
| | - Zhengwei Zhang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, P. R. China
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Zhu T, Liu K, Zhang Y, Meng S, He M, Zhang Y, Yan M, Dong X, Li X, Jiang M, Xu H. Gate Voltage- and Bias Voltage-Tunable Staggered-Gap to Broken-Gap Transition Based on WSe 2/Ta 2NiSe 5 Heterostructure for Multimode Optoelectronic Logic Gate. ACS NANO 2024; 18:11462-11473. [PMID: 38632853 DOI: 10.1021/acsnano.4c02923] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/19/2024]
Abstract
Two-dimensional (2D) materials with superior properties exhibit tremendous potential in developing next-generation electronic and optoelectronic devices. Integrating various functions into one device is highly expected as that endows 2D materials great promise for more Moore and more-than-Moore device applications. Here, we construct a WSe2/Ta2NiSe5 heterostructure by stacking the p-type WSe2 and the n-type narrow gap Ta2NiSe5 with the aim to achieve a multifunction optoelectronic device. Owing to the large interface potential barrier, the heterostructure device reveals a prominent diode feature with a large rectify ratio (7.6 × 104) and a low dark current (10-12 A). Especially, gate voltage- and bias voltage-tunable staggered-gap to broken-gap transition is achieved on the heterostructure device, which enables gate voltage-tunable forward and reverse rectifying features. As results, the heterostructure device exhibits superior self-powered photodetection properties, including a high detectivity of 1.08 × 1010 Jones and a fast response time of 91 μs. Additionally, the intrinsic structural anisotropy of Ta2NiSe5 endows the heterostructure device with strong polarization-sensitive photodetection and high-resolution polarization imaging. Based on these characteristics, a multimode optoelectronic logic gate is realized on the heterostructure via synergistically modulating the light on/off, polarization angle, gate voltage, and bias voltage. This work shed light on the future development of constructing high-performance multifunctional optoelectronic devices.
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Affiliation(s)
- Tao Zhu
- State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon Technology, School of Physics, Northwest University, Xi'an 710069, P. R. China
- Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
| | - Kai Liu
- State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon Technology, School of Physics, Northwest University, Xi'an 710069, P. R. China
- Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
| | - Yao Zhang
- State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon Technology, School of Physics, Northwest University, Xi'an 710069, P. R. China
- Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
| | - Si Meng
- Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
| | - Mengfei He
- Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
| | - Yingli Zhang
- State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon Technology, School of Physics, Northwest University, Xi'an 710069, P. R. China
| | - Minglu Yan
- State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon Technology, School of Physics, Northwest University, Xi'an 710069, P. R. China
| | - Xiaoxiang Dong
- Department of Physics, Xiamen University, Xiamen 361005, P. R. China
| | - Xiaobo Li
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710126, P. R. China
| | - Man Jiang
- State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon Technology, School of Physics, Northwest University, Xi'an 710069, P. R. China
| | - Hua Xu
- Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China
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3
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Meng Y, Wang W, Wang W, Li B, Zhang Y, Ho J. Anti-Ambipolar Heterojunctions: Materials, Devices, and Circuits. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2306290. [PMID: 37580311 DOI: 10.1002/adma.202306290] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/29/2023] [Revised: 07/31/2023] [Indexed: 08/16/2023]
Abstract
Anti-ambipolar heterojunctions are vital in constructing high-frequency oscillators, fast switches, and multivalued logic (MVL) devices, which hold promising potential for next-generation integrated circuit chips and telecommunication technologies. Thanks to the strategic material design and device integration, anti-ambipolar heterojunctions have demonstrated unparalleled device and circuit performance that surpasses other semiconducting material systems. This review aims to provide a comprehensive summary of the achievements in the field of anti-ambipolar heterojunctions. First, the fundamental operating mechanisms of anti-ambipolar devices are discussed. After that, potential materials used in anti-ambipolar devices are discussed with particular attention to 2D-based, 1D-based, and organic-based heterojunctions. Next, the primary device applications employing anti-ambipolar heterojunctions, including anti-ambipolar transistors (AATs), photodetectors, frequency doublers, and synaptic devices, are summarized. Furthermore, alongside the advancements in individual devices, the practical integration of these devices at the circuit level, including topics such as MVL circuits, complex logic gates, and spiking neuron circuits, is also discussed. Lastly, the present key challenges and future research directions concerning anti-ambipolar heterojunctions and their applications are also emphasized.
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Affiliation(s)
- You Meng
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Weijun Wang
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Wei Wang
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Bowen Li
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Yuxuan Zhang
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Johnny Ho
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka, 816-8580, Japan
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4
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Kim J, Lee J, Lee JM, Facchetti A, Marks TJ, Park SK. Recent Advances in Low-Dimensional Nanomaterials for Photodetectors. SMALL METHODS 2024; 8:e2300246. [PMID: 37203281 DOI: 10.1002/smtd.202300246] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/25/2023] [Revised: 04/21/2023] [Indexed: 05/20/2023]
Abstract
New emerging low-dimensional such as 0D, 1D, and 2D nanomaterials have attracted tremendous research interests in various fields of state-of-the-art electronics, optoelectronics, and photonic applications due to their unique structural features and associated electronic, mechanical, and optical properties as well as high-throughput fabrication for large-area and low-cost production and integration. Particularly, photodetectors which transform light to electrical signals are one of the key components in modern optical communication and developed imaging technologies for whole application spectrum in the daily lives, including X-rays and ultraviolet biomedical imaging, visible light camera, and infrared night vision and spectroscopy. Today, diverse photodetector technologies are growing in terms of functionality and performance beyond the conventional silicon semiconductor, and low-dimensional nanomaterials have been demonstrated as promising potential platforms. In this review, the current states of progress on the development of these nanomaterials and their applications in the field of photodetectors are summarized. From the elemental combination for material design and lattice structure to the essential investigations of hybrid device architectures, various devices and recent developments including wearable photodetectors and neuromorphic applications are fully introduced. Finally, the future perspectives and challenges of the low-dimensional nanomaterials based photodetectors are also discussed.
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Affiliation(s)
- Jaehyun Kim
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - Junho Lee
- Displays and Devices Research Lab. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06974, South Korea
| | - Jong-Min Lee
- Displays and Devices Research Lab. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06974, South Korea
| | - Antonio Facchetti
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - Tobin J Marks
- Department of Chemistry and Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - Sung Kyu Park
- Displays and Devices Research Lab. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06974, South Korea
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5
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Hu H, Zhen W, Yue Z, Niu R, Xu F, Zhu W, Jiao K, Long M, Xi C, Zhu W, Zhang C. A mixed-dimensional quasi-1D BiSeI nanowire-2D GaSe nanosheet p-n heterojunction for fast response optoelectronic devices. NANOSCALE ADVANCES 2023; 5:6210-6215. [PMID: 37941949 PMCID: PMC10629003 DOI: 10.1039/d3na00525a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/14/2023] [Accepted: 10/05/2023] [Indexed: 11/10/2023]
Abstract
Due to the unique combination configuration and the formation of a built-in electric field, mixed-dimensional heterojunctions present fruitful possibilities for improving the optoelectronic performances of low-dimensional optoelectronic devices. However, the response times of most photodetectors built from mixed-dimensional heterojunctions are within the millisecond range, limiting their applications in fast response optoelectronic devices. Herein, a mixed-dimensional BiSeI/GaSe van der Waals heterostructure is designed, which exhibits visible light detection ability and competitive photoresponsivity of 750 A W-1 and specific detectivity of 2.25 × 1012 Jones under 520 nm laser excitation. Excitingly, the device displays a very fast response time, e.g., the rise time and decay time under 520 nm laser excitation are 65 μs and 190 μs, respectively. Our findings provide a prospective approach to mixed-dimensional heterojunction photodetection devices with rapid switching capabilities.
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Affiliation(s)
- Huijie Hu
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
- Science Island Branch of Graduate School, University of Science and Technology of China Hefei 230026 China
| | - Weili Zhen
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Zhilai Yue
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Rui Niu
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Feng Xu
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Wanli Zhu
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Keke Jiao
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Mingsheng Long
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University Hefei 230601 China
| | - Chuanying Xi
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Wenka Zhu
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
| | - Changjin Zhang
- High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences Hefei 230031 China
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University Hefei 230601 China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University Nanjing 210093 China
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6
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Li X, Meng Y, Li W, Zhang J, Dang C, Wang H, Hung SW, Fan R, Chen FR, Zhao S, Ho JC, Lu Y. Multislip-enabled morphing of all-inorganic perovskites. NATURE MATERIALS 2023; 22:1175-1181. [PMID: 37580366 DOI: 10.1038/s41563-023-01631-z] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/17/2022] [Accepted: 07/10/2023] [Indexed: 08/16/2023]
Abstract
All-inorganic lead halide perovskites (CsPbX3, X = Cl, Br or I) are becoming increasingly important for energy conversion and optoelectronics because of their outstanding performance and enhanced environmental stability. Morphing perovskites into specific shapes and geometries without damaging their intrinsic functional properties is attractive for designing devices and manufacturing. However, inorganic semiconductors are often intrinsically brittle at room temperature, except for some recently reported layered or van der Waals semiconductors. Here, by in situ compression, we demonstrate that single-crystal CsPbX3 micropillars can be substantially morphed into distinct shapes (cubic, L and Z shapes, rectangular arches and so on) without localized cleavage or cracks. Such exceptional plasticity is enabled by successive slips of partial dislocations on multiple [Formula: see text] systems, as evidenced by atomic-resolution transmission electron microscopy and first-principles and atomistic simulations. The optoelectronic performance and bandgap of the devices were unchanged. Thus, our results suggest that CsPbX3 perovskites, as potential deformable inorganic semiconductors, may have profound implications for the manufacture of advanced optoelectronics and energy systems.
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Affiliation(s)
- Xiaocui Li
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, China
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, China
- Time-resolved Aberration Corrected Environmental Electron Microscope Unit, City University of Hong Kong, Kowloon, China
| | - You Meng
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, China
| | - Wanpeng Li
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, China
- Time-resolved Aberration Corrected Environmental Electron Microscope Unit, City University of Hong Kong, Kowloon, China
| | - Jun Zhang
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, China
| | - Chaoqun Dang
- Center for X-mechanics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, China
| | - Heyi Wang
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, China
| | - Shih-Wei Hung
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, China
- Time-resolved Aberration Corrected Environmental Electron Microscope Unit, City University of Hong Kong, Kowloon, China
| | - Rong Fan
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, China
| | - Fu-Rong Chen
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, China.
- Time-resolved Aberration Corrected Environmental Electron Microscope Unit, City University of Hong Kong, Kowloon, China.
| | - Shijun Zhao
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, China.
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, China.
| | - Yang Lu
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, China.
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, China.
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Chen Z, Huang J, Yang M, Liu X, Zheng Z, Huo N, Han L, Luo D, Li J, Gao W. Bi 2O 2Se Nanowire/MoSe 2 Mixed-Dimensional Polarization-Sensitive Photodiode with a Nanoscale Ultrafast-Response Channel. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37335909 DOI: 10.1021/acsami.3c05283] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/21/2023]
Abstract
In recent years, polarization-sensitive photodiodes based on one-dimensional/two-dimensional (1D/2D) van der Waals (vdWs) heterostructures have garnered significant attention due to the high specific surface area, strong orientation degree of 1D structures, and large photo-active area and mechanical flexibility of 2D structures. Therefore, they are applicable in wearable electronics, electrical-driven lasers, image sensing, optical communication, optical switches, etc. Herein, 1D Bi2O2Se nanowires have been successfully synthesized via chemical vapor deposition. Impressively, the strongest Raman vibration modes can be achieved along the short edge (y-axis) of Bi2O2Se nanowires with high crystalline quality, which originate from Se and Bi vacancies. Moreover, the Bi2O2Se/MoSe2 photodiode designed with type-II band alignment demonstrates a high rectification ratio of 103. Intuitively, the photocurrent peaks are mainly distributed in the overlapped region under the self-powered mode and reverse bias, within the wavelength range of 400-nm. The resulting device exhibits excellent optoelectrical performances, including high responsivities (R) and fast response speed of 656 mA/W and 350/380 μs (zero bias) and 17.17 A/W and 100/110 μs (-1 V) under 635 nm illumination, surpassing the majority of reported mixed-dimensional photodiodes. The most significant feature of our photodiode is its highest photocurrent anisotropic ratio of ∼2.2 (-0.8 V) along the long side (x-axis) of Bi2O2Se nanowires under 635 nm illumination. The above results reveal a robust and distinctive correlation between structural defects and polarized orientation for 1D Bi2O2Se nanowires. Furthermore, 1D Bi2O2Se nanowires appear to be a great potential candidate for high-performance rectifiers, polarization-sensitive photodiodes, and phototransistors based on mixed vdWs heterostructures.
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Affiliation(s)
- Zecheng Chen
- Huangpu Hydrogen Innovation Center/Guangzhou Key Laboratory for Clean Energy and Materials, School of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou 510006, P. R. China
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Guangzhou 528225, P. R. China
| | - Jianming Huang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Guangzhou 528225, P. R. China
| | - Mengmeng Yang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Guangzhou 528225, P. R. China
| | - Xiao Liu
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Guangzhou 528225, P. R. China
| | - Zhaoqiang Zheng
- College of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Nengjie Huo
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Guangzhou 528225, P. R. China
| | - Lixiang Han
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Guangzhou 528225, P. R. China
| | - Dongxiang Luo
- Huangpu Hydrogen Innovation Center/Guangzhou Key Laboratory for Clean Energy and Materials, School of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou 510006, P. R. China
| | - Jingbo Li
- College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Wei Gao
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Guangzhou 528225, P. R. China
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8
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Hu W, Wang H, Dong J, Sun H, Wang Y, Sheng Z, Zhang Z. Chemical Dopant-Free Controlled MoTe 2/MoSe 2 Heterostructure toward a Self-Driven Photodetector and Complementary Logic Circuits. ACS APPLIED MATERIALS & INTERFACES 2023; 15:18182-18190. [PMID: 36987733 DOI: 10.1021/acsami.2c21785] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Two-dimensional (2D) van der Waals heterostructures based on transition metal dichalcogenides are expected to be unique building blocks for next-generation nanoscale electronics and optoelectronics. The ability to control the properties of 2D heterostructures is the key for practical applications. Here, we report a simple way to fabricate a high-performance self-driven photodetector based on the MoTe2/MoSe2 p-n heterojunction, in which the hole-dominated transport polarity of MoTe2 is easily achieved via a straightforward thermal annealing treatment in air without any chemical dopants or special gases needed. A high photoresponsivity of 0.72 A W-1, an external quantum efficiency up to 41.3%, a detectivity of 7 × 1011 Jones, and a response speed of 120 μs are obtained at zero bias voltage. Additionally, this doping method is also utilized to realize a complementary inverter with a voltage gain of 24. By configuring 2D p-MoTe2 and n-MoSe2 on demand, logic functions of NAND and NOR gates are also accomplished successfully. These results present a significant potential toward future larger-scale heterogeneously integrated 2D electronics and optoelectronics.
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Affiliation(s)
- Wennan Hu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Hu Wang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Jianguo Dong
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Haoran Sun
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Yue Wang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Zhe Sheng
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Zengxing Zhang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
- National Integrated Circuit Innovation Center, No. 825 Zhangheng Road, Shanghai 201203, China
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9
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Luo Z, Xu H, Gao W, Yang M, He Y, Huang Z, Yao J, Zhang M, Dong H, Zhao Y, Zheng Z, Li J. High-Performance and Polarization-Sensitive Imaging Photodetector Based on WS 2 /Te Tunneling Heterostructure. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2207615. [PMID: 36605013 DOI: 10.1002/smll.202207615] [Citation(s) in RCA: 12] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/06/2022] [Revised: 12/23/2022] [Indexed: 06/17/2023]
Abstract
Next-generation imaging systems require photodetectors with high sensitivity, polarization sensitivity, miniaturization, and integration. By virtue of their intriguing attributes, emerging 2D materials offer innovative avenues to meet these requirements. However, the current performance of 2D photodetectors is still below the requirements for practical application owing to the severe interfacial recombination, the lack of photoconductive gain, and insufficient photocarrier collection. Here, a tunneling dominant imaging photodetector based on WS2 /Te heterostructure is reported. This device demonstrates competitive performance, including a remarkable responsivity of 402 A W-1 , an outstanding detectivity of 9.28 × 1013 Jones, a fast rise/decay time of 1.7/3.2 ms, and a high photocurrent anisotropic ratio of 2.5. These outstanding performances can be attributed to the type-I band alignment with carrier transmission barriers and photoinduced tunneling mechanism, allowing reduced interfacial trapping effect, effective photoconductive gains, and anisotropic collection of photocarriers. Significantly, the constructed photodetector is successfully integrated into a polarized light imaging system and an ultra-weak light imaging system to illustrate the imaging capability. These results suggest the promising application prospect of the device in future imaging systems.
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Affiliation(s)
- Zhongtong Luo
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Huakai Xu
- College of Science, Guangdong University of Petrochemical Technology, Maoming, Guangdong, 525000, P. R. China
| | - Wei Gao
- School of Semiconductor Science and Technology, South China Normal University, Foshan, Guangdong, 528225, P. R. China
| | - Mengmeng Yang
- School of Semiconductor Science and Technology, South China Normal University, Foshan, Guangdong, 528225, P. R. China
| | - Yan He
- College of Science, Guangdong University of Petrochemical Technology, Maoming, Guangdong, 525000, P. R. China
| | - Zihao Huang
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Menglong Zhang
- School of Semiconductor Science and Technology, South China Normal University, Foshan, Guangdong, 528225, P. R. China
| | - Huafeng Dong
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou, 510006, P. R. China
| | - Yu Zhao
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Zhaoqiang Zheng
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Jingbo Li
- School of Semiconductor Science and Technology, South China Normal University, Foshan, Guangdong, 528225, P. R. China
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou, Guangdong, 510631, P. R. China
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10
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Nawaz MZ, Xu L, Zhou X, Javed M, Wang J, Wu B, Wang C. Synergistic Effect of Hybrid CdSe Nanobelt/PbI 2 Flake Heterojunction Toward Drastic Performance Flexible Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 36896978 DOI: 10.1021/acsami.2c22219] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Despite numerous studies on broadband photodetectors, the problematic query that remains unaddressed is the limited photoresponsivity while broadening the spectral regime. Here, for the first time, a rational design of a hybrid 1D CdSe nanobelt/2D PbI2 flake heterojunction device is constructed, which substantially boosts the photocurrent while significantly attenuating the dark current, resulting in improved photodetector figures-of-merit. Thanks to the excellent quality of the nanobelt/flake and built-in electric field at the CdSe/PbI2 interface heterojunction, photogenerated carriers are promptly segregated and more photoexcitons are accumulated by the respective electrodes, enabling a high responsivity of ∼106 A/W, making this one of the highest values among similar reported hybrid heterojunction photodetectors, together with a large linear dynamic range, superior sensitivity, excellent detectivity and external quantum efficiency, an ultrafast response, and a broadband spectral response range. The similar 1D/2D hybrid heterojunction device architecture assembled on the flexible polyimide tape substrate exhibits excellent folding endurance and mechanical, flexural, and long-term environmental stability. The present device architecture and robust operational stability in an ambient environment reveals that the combination of the present 1D/2D hybrid heterojunction has incredible potential for future flexible photoelectronic devices.
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Affiliation(s)
- Muhammad Zubair Nawaz
- College of Science and Shanghai Institute of Intelligent Electronics and Systems, Donghua University, Shanghai 201620, China
| | - Liu Xu
- College of Science and Shanghai Institute of Intelligent Electronics and Systems, Donghua University, Shanghai 201620, China
| | - Xin Zhou
- College of Science and Shanghai Institute of Intelligent Electronics and Systems, Donghua University, Shanghai 201620, China
| | - Muhammad Javed
- College of Science and Shanghai Institute of Intelligent Electronics and Systems, Donghua University, Shanghai 201620, China
| | - Jiale Wang
- College of Science and Shanghai Institute of Intelligent Electronics and Systems, Donghua University, Shanghai 201620, China
| | - Binhe Wu
- College of Science and Shanghai Institute of Intelligent Electronics and Systems, Donghua University, Shanghai 201620, China
| | - Chunrui Wang
- College of Science and Shanghai Institute of Intelligent Electronics and Systems, Donghua University, Shanghai 201620, China
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11
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Zhang H, Wang Z, Chen J, Tan C, Yin S, Zhang H, Wang S, Qin Q, Li L. Type-I PtS 2/MoS 2 van der Waals heterojunctions with tunable photovoltaic effects and high photosensitivity. NANOSCALE 2022; 14:16130-16138. [PMID: 36239166 DOI: 10.1039/d2nr04231b] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Recent advances in two-dimensional (2D) materials play an essential role in boosting modern electronics and optoelectronics. Thus far, transition metal dichalcogenides (TMDs) as emerging members of 2D materials, and the van der Waals heterostructures (vdWHs) based on TMDs have been extensively investigated owing to their prominent capabilities and unique crystal structures. In this work, an original vdWH composed of molybdenum disulfide (MoS2) and platinum disulfide (PtS2) was comprehensively studied as a field-effect transistor (FET) and photodetector. A gate-tunable rectifying behavior was obtained, stemming from the band design of PtS2/MoS2 vdWH. Upon 685 nm laser illumination, it also exhibited a superior photodetection performance with a distinctly high photoresponsivity of 403 A W-1, a comparable detectivity of 1.07 × 1011 Jones, and an excellent external quantum efficiency of 7.32 × 104%. More importantly, fast rise (24 ms) and decay (21 ms) times were obtained under 685 nm light illumination attributed to the unilateral depletion region structure. Further, the photovoltaic effect and photocurrent of the heterojunction could be modulated by a back gate voltage. All these results indicated that such 2D-TMD-based vdWHs provide a new idea for realizing high-performance electronic and optoelectronic devices.
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Affiliation(s)
- Hui Zhang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Zihan Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Jiawang Chen
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P.R. China.
- University of Science and Technology of China, Hefei 230026, P.R. China
| | - Chaoyang Tan
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Shiqi Yin
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Hanlin Zhang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Shaotian Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Qinggang Qin
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Liang Li
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P.R. China.
- University of Science and Technology of China, Hefei 230026, P.R. China
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12
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Liu D, Chen R, Liu F, Zhang J, Zhuang X, Yin Y, Wang M, Sa Z, Wang P, Sun L, Pang Z, Tan Y, Jia Z, Chen M, Yang ZX. Flexible Omnidirectional Self-Powered Photodetectors Enabled by Solution-Processed Two-Dimensional Layered PbI 2 Nanoplates. ACS APPLIED MATERIALS & INTERFACES 2022; 14:46748-46755. [PMID: 36196627 DOI: 10.1021/acsami.2c13373] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Realizing omnidirectional self-powered photodetectors is central to advancing next-generation portable and smart photodetector systems. However, the traditional omnidirectional photodetector is typically achieved by integrating complex hemispherical microlens on multiple photodetectors, which makes the detection system cumbersome and restricts its application in the portable field. Here, facile and high-performance flexible omnidirectional self-powered photodetectors are achieved by solution-processed two-dimensional (2D) layered PbI2 nanoplates on transparent conducting substrates. Characterization of PbI2 nanoplates microstructural/compositional and their photodetection properties have been systematically characterized. Under the irradiation of a 405 nm laser, the photodetectors exhibit an impressively low dark current of 10-13 A, a high light on/off ratio up to 106, and a fast rise/decay response time of 2/3 ms. Importantly, when light irradiates the photodetector at 5°, it can still maintain high photodetection properties, realizing almost 360° omnidirectional self-powered photodetection. What is more, these self-powered photodetectors exhibit robust omnidirectional photoresponse stability of flexibility even after bending for 1200 cycles. Thus, this work broadens the applicability of 2D layered nanoplates for further extending its applications in advanced optoelectronic devices.
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Affiliation(s)
- Dong Liu
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Ruichang Chen
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Fengjing Liu
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Jie Zhang
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Xinming Zhuang
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Yanxue Yin
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Mingxu Wang
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Zixu Sa
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Peng Wang
- College of Electronic and Information Engineering, Shandong University of Science and Technology, Qingdao 266590, China
| | - Li Sun
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Zhiyong Pang
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Yang Tan
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Zhitai Jia
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Ming Chen
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Zai-Xing Yang
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250100, China
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13
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Meng Y, Wang W, Ho JC. One-Dimensional Atomic Chains for Ultimate-Scaled Electronics. ACS NANO 2022; 16:13314-13322. [PMID: 35997488 DOI: 10.1021/acsnano.2c06359] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
The continuous downscaling of semiconducting channels in transistors has driven the development of modern electronics. However, with the component transistors becoming smaller and denser on a single chip, the continued downscaling progress has touched the physical limits. In this Perspective, we suggest that the emerging one-dimensional (1D) material system involving inorganic atomic chains (ACs) that are packed by van der Waals (vdW) interactions may tackle this issue. Stemming from their 1D crystal structures and naturally terminated surfaces, 1D ACs could potentially shrink transistors to atomic-scale diameters. Also, we argue that 1D ACs with few-atom widths allow us to revisit 1D materials and uncover physical properties distinct from conventional materials. These ultrathin 1D AC materials demand substantive attention. They may bring opportunities to develop ultimate-scaled AC-based electronic, optoelectronic, thermoelectric, spintronic, memory devices, etc.
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Affiliation(s)
| | | | - Johnny C Ho
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka 816-8580, Japan
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