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Symonowicz J, Jan A, Yan H, Chhowalla M, Di Martino G. Scanning Plasmon-Enhanced Microscopy for Simultaneous Optoelectrical Characterization. ACS NANO 2024; 18:20412-20421. [PMID: 39066717 PMCID: PMC11308916 DOI: 10.1021/acsnano.4c04671] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/09/2024] [Revised: 07/08/2024] [Accepted: 07/16/2024] [Indexed: 07/30/2024]
Abstract
Scanning microscopy methods are crucial for the advancement of nanoelectronics. However, the vertical nanoprobes in such techniques suffer limitations such as the fragility at the tip-sample interface, complex instrumentation, and the lack of in operando functionality in several cases. Here, we introduce scanning plasmon-enhanced microscopy (SPEM) and demonstrate its capabilities on MoS2 and WSe2 nanosheets. SPEM combines a nanoparticle-on-mirror (NPoM) configuration with a portable conductive cantilever, enabling simultaneous optical and electrical characterization. This distinguishes it from other current techniques that cannot provide both characterizations simultaneously. It offers a competitive optical resolution of 600 nm with local enhancement of optical signal up to 20,000 times. A single gold nanoparticle with a 15 nm radius forms pristine, nondamaging van der Waals contact, which allows observation of unexpected p-type behavior of MoS2 at the nanoscale. SPEM reconstructs the NPoM method by eliminating the need for extensive statistical analysis and offering excellent nanoscale mapping resolution of any selected region. It surpasses other scanning techniques in combining precise optical and electrical characterization, interactive simplicity, tip durability, and reproducibility, positioning it as the optimal tool for advancing nanoelectronics.
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Affiliation(s)
| | | | - Han Yan
- Department of Materials Science
and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
| | - Manish Chhowalla
- Department of Materials Science
and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
| | - Giuliana Di Martino
- Department of Materials Science
and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
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Chen SH, Chang SW, Chen HL. Characterization of 2D Transition Metal Dichalcogenides Through Anisotropic Exciton Behaviors. SMALL METHODS 2024; 8:e2301061. [PMID: 38098297 DOI: 10.1002/smtd.202301061] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/10/2023] [Revised: 11/03/2023] [Indexed: 05/18/2024]
Abstract
This study reports the first attempt to characterize the quality, defects, and strain of as-grown monolayer transition metal dichalcogenide (TMDC)-based 2D materials through exciton anisotropy. A standard ellipsometric parameter (Ψ) to observe anisotropic exciton behavior in monolayer 2D materials is used. According to the strong exciton effect from phonon-electron coupling processes, the change in the exciton in the Van Hove singularity is sensitive to lattice distortions such as defects and strain. In comparison with Raman spectroscopy, the variations in exciton anisotropy in Ψ are more sensitive for detecting slight changes in the quality and strain of monolayer TMDC films. Moreover, the optical power requirement for TMDC characterization through exciton anisotropy in Ψ is ≈10-5 mW cm-2, which is significantly less than that of Raman spectroscopy (≈106 mW cm-2). The standard deviation of the signals varies with strain (defects) in Raman spectra and exciton anisotropies in Ψ are 0.700 (0.795) and 0.033 (0.073), indicating that exciton anisotropy is more sensitive to slight changes in the quality of monolayer TMDC films.
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Affiliation(s)
- Shu-Hsien Chen
- Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei, 10617, Taiwan
| | - Sih-Wei Chang
- Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei, 10617, Taiwan
| | - Hsuen-Li Chen
- Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei, 10617, Taiwan
- Center of Atomic Initiative for New Materials, National Taiwan University, Taipei, 10617, Taiwan
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Ermolaev GA, Vyslanko IS, Tselin AP, El-Sayed MA, Tatmyshevskiy MK, Slavich AS, Yakubovsky DI, Mironov MS, Mazitov AB, Eghbali A, Panova DA, Romanov RI, Markeev AM, Kruglov IA, Novikov SM, Vyshnevyy AA, Arsenin AV, Volkov VS. Broadband Optical Properties of Bi 2Se 3. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13091460. [PMID: 37177004 PMCID: PMC10180482 DOI: 10.3390/nano13091460] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/08/2023] [Revised: 04/18/2023] [Accepted: 04/21/2023] [Indexed: 05/15/2023]
Abstract
Materials with high optical constants are of paramount importance for efficient light manipulation in nanophotonics applications. Recent advances in materials science have revealed that van der Waals (vdW) materials have large optical responses owing to strong in-plane covalent bonding and weak out-of-plane vdW interactions. However, the optical constants of vdW materials depend on numerous factors, e.g., synthesis and transfer method. Here, we demonstrate that in a broad spectral range (290-3300 nm) the refractive index n and the extinction coefficient k of Bi2Se3 are almost independent of synthesis technology, with only a ~10% difference in n and k between synthesis approaches, unlike other vdW materials, such as MoS2, which has a ~60% difference between synthesis approaches. As a practical demonstration, we showed, using the examples of biosensors and therapeutic nanoparticles, that this slight difference in optical constants results in reproducible efficiency in Bi2Se3-based photonic devices.
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Affiliation(s)
- Georgy A Ermolaev
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Ivan S Vyslanko
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Andrey P Tselin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
- Photonics and Quantum Materials Department, Skolkovo Institute of Science and Technology, 3 Nobel Str., Moscow 143026, Russia
| | - Marwa A El-Sayed
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
- Department of Physics, Faculty of Science, Menoufia University, Shebin El-Koom 32511, Egypt
| | - Mikhail K Tatmyshevskiy
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Aleksandr S Slavich
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Dmitry I Yakubovsky
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Mikhail S Mironov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Arslan B Mazitov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Amir Eghbali
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Daria A Panova
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Roman I Romanov
- Department of Solid State Physics and Nanosystems, National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), 31 Kashirskoe Sh., Moscow 115409, Russia
| | - Andrey M Markeev
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Ivan A Kruglov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
- Center of Fundamental and Applied Research, Dukhov Research Institute of Automatics (VNIIA), 22 Suschevskaya Str., Moscow 127055, Russia
| | - Sergey M Novikov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Andrey A Vyshnevyy
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
| | - Aleksey V Arsenin
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
- Laboratory of Advanced Functional Materials, Yerevan State University, 1 Alek Manukyan Str., Yerevan 0025, Armenia
| | - Valentyn S Volkov
- Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, 9 Institutsky Lane, Dolgoprudny 141700, Russia
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