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Kim H, Kim T, Chung HK, Jeon J, Kim SC, Won SO, Harada R, Tsugawa T, Kim S, Kim SK. Sustained Area-Selectivity in Atomic Layer Deposition of Ir Films: Utilization of Dual Effects of O 3 in Deposition and Etching. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2402543. [PMID: 39077961 DOI: 10.1002/smll.202402543] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/30/2024] [Revised: 06/14/2024] [Indexed: 07/31/2024]
Abstract
Area-selective deposition (ASD) based on self-aligned technology has emerged as a promising solution for resolving misalignment issues during ultrafine patterning processes. Despite its potential, the problems of area-selectivity losing beyond a certain thickness remain critical in ASD applications. This study reports a novel approach to sustain the area-selectivity of Ir films as the thickness increases. Ir films are deposited on Al2O3 as the growth area and SiO2 as the non-growth area using atomic-layer-deposition with tricarbonyl-(1,2,3-η)-1,2,3-tri(tert-butyl)-cyclopropenyl-iridium and O3. O3 exhibits a dual effect, facilitating both deposition and etching. In the steady-state growth regime, O3 solely contributes to deposition, whereas in the initial growth stages, longer exposure to O3 etches the initially formed isolated Ir nuclei through the formation of volatile IrO3. Importantly, longer O3 exposure is required for the initial etching on the growth area(Al2O3) compared to the non-growth area(SiO2). By controlling the O3 injection time, the area selectivity is sustained even above a thickness of 25 nm by suppressing nucleation on the non-growth area. These findings shed light on the fundamental mechanisms of ASD using O3 and offer a promising avenue for advancing thin-film technologies. Furthermore, this approach holds promise for extending ASD to other metals susceptible to forming volatile species.
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Affiliation(s)
- Han Kim
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, South Korea
- Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 02792, South Korea
| | - Taeseok Kim
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, South Korea
- Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 02792, South Korea
| | - Hong Keun Chung
- Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 02792, South Korea
- Department of Materials Science and Chemical Engineering, Hanyang University, Ansan, 15588, South Korea
| | - Jihoon Jeon
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, South Korea
- Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 02792, South Korea
| | - Sung-Chul Kim
- Advanced Analysis and Data Center, Korea Institute of Science and Technology, Seoul, 02792, South Korea
| | - Sung Ok Won
- Advanced Analysis and Data Center, Korea Institute of Science and Technology, Seoul, 02792, South Korea
| | - Ryosuke Harada
- Chemical Materials Development Department, TANAKA Kikinzoku Kogyo K.K., Tsukuba, 300-4247, Japan
| | - Tomohiro Tsugawa
- Chemical Materials Development Department, TANAKA Kikinzoku Kogyo K.K., Tsukuba, 300-4247, Japan
| | - Sangtae Kim
- Department of Nuclear Engineering, Hanyang University, Seoul, 04763, South Korea
| | - Seong Keun Kim
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, South Korea
- Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 02792, South Korea
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2
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Raffaelle P, Wang GT, Shestopalov AA. Vapor-Phase Halogenation of Hydrogen-Terminated Silicon(100) Using N-Halogen-succinimides. ACS APPLIED MATERIALS & INTERFACES 2023; 15:55139-55149. [PMID: 37965814 PMCID: PMC10694808 DOI: 10.1021/acsami.3c13269] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/08/2023] [Revised: 10/26/2023] [Accepted: 10/30/2023] [Indexed: 11/16/2023]
Abstract
The focus of this study was to demonstrate the vapor-phase halogenation of Si(100) and subsequently evaluate the inhibiting ability of the halogenated surfaces toward atomic layer deposition (ALD) of aluminum oxide (Al2O3). Hydrogen-terminated silicon ⟨100⟩ (H-Si(100)) was halogenated using N-chlorosuccinimide (NCS), N-bromosuccinimide (NBS), and N-iodosuccinimide (NIS) in a vacuum-based chemical process. The composition and physical properties of the prepared monolayers were analyzed by using X-ray photoelectron spectroscopy (XPS) and contact angle (CA) goniometry. These measurements confirmed that all three reagents were more effective in halogenating H-Si(100) over OH-Si(100) in the vapor phase. The stability of the modified surfaces in air was also tested, with the chlorinated surface showing the greatest resistance to monolayer degradation and silicon oxide (SiO2) generation within the first 24 h of exposure to air. XPS and atomic force microscopy (AFM) measurements showed that the succinimide-derived Hal-Si(100) surfaces exhibited blocking ability superior to that of H-Si(100), a commonly used ALD resist. This halogenation method provides a dry chemistry alternative for creating halogen-based ALD resists on Si(100) in near-ambient environments.
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Affiliation(s)
- Patrick
R. Raffaelle
- Department
of Chemical Engineering, Hajim School of Engineering and Applied Sciences, University of Rochester, Rochester, New York 14627, United States
| | - George T. Wang
- Sandia
National Laboratories, Albuquerque, New Mexico 87185, United States
| | - Alexander A. Shestopalov
- Department
of Chemical Engineering, Hajim School of Engineering and Applied Sciences, University of Rochester, Rochester, New York 14627, United States
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Satyarthy S, Hasan Ul Iqbal M, Abida F, Nahar R, Hauser AJ, Cheng MMC, Ghosh A. Stearic Acid as an Atomic Layer Deposition Inhibitor: Spectroscopic Insights from AFM-IR. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2713. [PMID: 37836354 PMCID: PMC10574727 DOI: 10.3390/nano13192713] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/17/2023] [Revised: 09/19/2023] [Accepted: 10/02/2023] [Indexed: 10/15/2023]
Abstract
Modern-day chip manufacturing requires precision in placing chip materials on complex and patterned structures. Area-selective atomic layer deposition (AS-ALD) is a self-aligned manufacturing technique with high precision and control, which offers cost effectiveness compared to the traditional patterning techniques. Self-assembled monolayers (SAMs) have been explored as an avenue for realizing AS-ALD, wherein surface-active sites are modified in a specific pattern via SAMs that are inert to metal deposition, enabling ALD nucleation on the substrate selectively. However, key limitations have limited the potential of AS-ALD as a patterning method. The choice of molecules for ALD blocking SAMs is sparse; furthermore, deficiency in the proper understanding of the SAM chemistry and its changes upon metal layer deposition further adds to the challenges. In this work, we have addressed the above challenges by using nanoscale infrared spectroscopy to investigate the potential of stearic acid (SA) as an ALD inhibiting SAM. We show that SA monolayers on Co and Cu substrates can inhibit ZnO ALD growth on par with other commonly used SAMs, which demonstrates its viability towards AS-ALD. We complement these measurements with AFM-IR, which is a surface-sensitive spatially resolved technique, to obtain spectral insights into the ALD-treated SAMs. The significant insight obtained from AFM-IR is that SA SAMs do not desorb or degrade with ALD, but rather undergo a change in substrate coordination modes, which can affect ALD growth on substrates.
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Affiliation(s)
- Saumya Satyarthy
- Department of Chemistry and Biochemistry, The University of Alabama, Tuscaloosa, AL 35487, USA; (S.S.); (M.H.U.I.)
| | - Md Hasan Ul Iqbal
- Department of Chemistry and Biochemistry, The University of Alabama, Tuscaloosa, AL 35487, USA; (S.S.); (M.H.U.I.)
| | - Fairoz Abida
- Department of Electrical and Computer Engineering, The University of Alabama, Tuscaloosa, AL 35487, USA; (F.A.); (M.M.-C.C.)
| | - Ridwan Nahar
- Department of Physics and Astronomy, The University of Alabama, Tuscaloosa, AL 35487, USA; (R.N.); (A.J.H.)
| | - Adam J. Hauser
- Department of Physics and Astronomy, The University of Alabama, Tuscaloosa, AL 35487, USA; (R.N.); (A.J.H.)
| | - Mark Ming-Cheng Cheng
- Department of Electrical and Computer Engineering, The University of Alabama, Tuscaloosa, AL 35487, USA; (F.A.); (M.M.-C.C.)
| | - Ayanjeet Ghosh
- Department of Chemistry and Biochemistry, The University of Alabama, Tuscaloosa, AL 35487, USA; (S.S.); (M.H.U.I.)
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Choi Y, Kim HJ, Kim E, Kang H, Park J, Do YR, Kwak K, Cho M. Molecular Mechanism of Selective Al 2O 3 Atomic Layer Deposition on Self-Assembled Monolayers. ACS APPLIED MATERIALS & INTERFACES 2023; 15:41170-41179. [PMID: 37561063 DOI: 10.1021/acsami.3c09529] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/11/2023]
Abstract
Area-selective atomic layer deposition (AS-ALD) of insulating metallic oxide layers could be a useful nanopatterning technique for making increasingly complex semiconductor circuits. Although the alkanethiol self-assembled monolayer (SAM) has been considered promising as an ALD inhibitor, the low inhibition efficiency of the SAM during ALD processes makes its wide application difficult. We investigated the deposition mechanism of Al2O3 on alkanethiol-SAMs using temperature-dependent vibrational sum-frequency-generation spectroscopy. We found that the thermally induced formation of gauche defects in the SAMs is the main causative factor deteriorating the inhibition efficiency. Here, we demonstrate that a discontinuously temperature-controlled ALD technique involving self-healing and dissipation of thermally induced stress on the structure of SAM substantially enhances the SAM's inhibition efficiency and enables us to achieve 60 ALD cycles (6.6 nm). We anticipate that the present experimental results on the ALD mechanism on the SAM surface and the proposed ALD method will provide clues to improve the efficiency of AS-ALD, a promising nanoscale patterning and manufacturing technique.
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Affiliation(s)
- Youngjin Choi
- Center for Molecular Spectroscopy and Dynamics, Institute for Basic Science (IBS), Seoul 02841, Republic of Korea
- Department of Chemistry, Korea University, Seoul 02841, Republic of Korea
| | - Hyeng Jin Kim
- Department of Chemistry, Kookmin University, Seoul 02707, Republic of Korea
| | - Eunchan Kim
- Center for Molecular Spectroscopy and Dynamics, Institute for Basic Science (IBS), Seoul 02841, Republic of Korea
- Department of Chemistry, Korea University, Seoul 02841, Republic of Korea
| | - Huiyeong Kang
- Department of Chemistry, Kookmin University, Seoul 02707, Republic of Korea
| | - Junhyeok Park
- Department of Chemistry, Korea University, Seoul 02841, Republic of Korea
| | - Young Rag Do
- Department of Chemistry, Kookmin University, Seoul 02707, Republic of Korea
| | - Kyungwon Kwak
- Center for Molecular Spectroscopy and Dynamics, Institute for Basic Science (IBS), Seoul 02841, Republic of Korea
- Department of Chemistry, Korea University, Seoul 02841, Republic of Korea
| | - Minhaeng Cho
- Center for Molecular Spectroscopy and Dynamics, Institute for Basic Science (IBS), Seoul 02841, Republic of Korea
- Department of Chemistry, Korea University, Seoul 02841, Republic of Korea
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5
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Pasquali M, Brady-Boyd A, Leśniewska A, Carolan P, Conard T, O'Connor R, De Gendt S, Armini S. Area-Selective Deposition of AlO x and Al-Silicate for Fully Self-Aligned Via Integration. ACS APPLIED MATERIALS & INTERFACES 2023; 15:6079-6091. [PMID: 36649199 DOI: 10.1021/acsami.2c18014] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
The rush for better-performing electronics, and manufacturing processes that heavily rely on "top-down" patterning techniques, is making the integration of "self-aligned" fabrication methods, such as area-selective deposition (ASD), a critical objective for continued device scaling. The fully self-aligned via (FSAV) scheme is broadly proposed as a "killer application" to determine whether ASD can shift from an R&D process to high-volume manufacturing. Nevertheless, the lack of a suitable low-κ deposition process has prevented the realization of FSAV by dielectric-on-dielectric ASD. This is primarily due to the high temperature and/or strong oxidizers employed during low-κ dielectric deposition and their unsuitability in the presence of organic masks, such as self-assembled monolayers (SAMs), used to prevent material nucleation during ASD. In this work, AlOx and Al-silicate atomic layer deposition (ALD) processes are studied to provide suitable materials for ASD-enabled FSAV. Dimethylaluminum isopropoxide and H2O are utilized to deposit the metal oxide, whereas Al-silicate is grown by adding 2,2-dimethoxy-1,6-diaza-2-silacyclooctane (DMDAcO) pulses to the AlOx ALD cycle. The selectivity of such processes is demonstrated on 50 nm Cu/SiO2 structures, using octadecanethiol-derived SAMs to inhibit material nucleation on the metal lines. Scanning and transmission electron microscopies are employed to assess the quality of the ASD processes and investigate the mechanisms behind defect generation on a nongrowth surface. X-ray photoelectron spectroscopy measurements show the high purity of the AlOx film, whereas DMDAcO-ligand incorporation into the Al-silicate matrix is observed. Planar capacitor structures are used to assess the electrical properties of both ASD films, revealing that the silicate film exhibits a relatively low κ-value (5.3 ± 0.2), with a high acceleration field factor (32.4 ± 1.4) and a dielectric breakdown voltage of 6.0 ± 0.3 V at 100 °C.
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Affiliation(s)
- Mattia Pasquali
- Department of Chemistry, Faculty of Science, KU Leuven, B-3001Leuven, Belgium
- Semiconductor Technology and System, Imec, Kapeldreef 75, B-3001Leuven, Belgium
| | - Anita Brady-Boyd
- Semiconductor Technology and System, Imec, Kapeldreef 75, B-3001Leuven, Belgium
- School of Physical Sciences, Dublin City University, Glasnevin, DublinDublin 9, Ireland
| | - Alicja Leśniewska
- Semiconductor Technology and System, Imec, Kapeldreef 75, B-3001Leuven, Belgium
| | - Patrick Carolan
- Semiconductor Technology and System, Imec, Kapeldreef 75, B-3001Leuven, Belgium
| | - Thierry Conard
- Semiconductor Technology and System, Imec, Kapeldreef 75, B-3001Leuven, Belgium
| | - Robert O'Connor
- School of Physical Sciences, Dublin City University, Glasnevin, DublinDublin 9, Ireland
| | - Stefan De Gendt
- Department of Chemistry, Faculty of Science, KU Leuven, B-3001Leuven, Belgium
- Semiconductor Technology and System, Imec, Kapeldreef 75, B-3001Leuven, Belgium
| | - Silvia Armini
- Semiconductor Technology and System, Imec, Kapeldreef 75, B-3001Leuven, Belgium
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6
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Gradient area-selective deposition for seamless gap-filling in 3D nanostructures through surface chemical reactivity control. Nat Commun 2022; 13:7597. [PMID: 36494441 PMCID: PMC9734176 DOI: 10.1038/s41467-022-35428-6] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/16/2022] [Accepted: 12/01/2022] [Indexed: 12/13/2022] Open
Abstract
The integration of bottom-up fabrication techniques and top-down methods can overcome current limits in nanofabrication. For such integration, we propose a gradient area-selective deposition using atomic layer deposition to overcome the inherent limitation of 3D nanofabrication and demonstrate the applicability of the proposed method toward large-scale production of materials. Cp(CH3)5Ti(OMe)3 is used as a molecular surface inhibitor to prevent the growth of TiO2 film in the next atomic layer deposition process. Cp(CH3)5Ti(OMe)3 adsorption was controlled gradually in a 3D nanoscale hole to achieve gradient TiO2 growth. This resulted in the formation of perfectly seamless TiO2 films with a high-aspect-ratio hole structure. The experimental results were consistent with theoretical calculations based on density functional theory, Monte Carlo simulation, and the Johnson-Mehl-Avrami-Kolmogorov model. Since the gradient area-selective deposition TiO2 film formation is based on the fundamentals of molecular chemical and physical behaviours, this approach can be applied to other material systems in atomic layer deposition.
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7
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Yun S, Ou F, Wang H, Tom M, Orkoulas G, Christofides PD. Atomistic-mesoscopic modeling of area-selective thermal atomic layer deposition. Chem Eng Res Des 2022. [DOI: 10.1016/j.cherd.2022.09.051] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
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8
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Hui L, Chen C, Kim MA, Liu H. Fabrication of DNA-Templated Pt Nanostructures by Area-Selective Atomic Layer Deposition. ACS APPLIED MATERIALS & INTERFACES 2022; 14:16538-16545. [PMID: 35357800 DOI: 10.1021/acsami.2c02244] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
We report the fabrication of DNA-templated Pt nanostructures by area-selective atomic layer deposition. A DNA-templated self-assembled monolayer was used to mediate the area-selective deposition of Pt. Using this approach, we demonstrated the fabrication of both single- and two-component nanostructure patterns, including Pt, TiO2/Pt, and Al2O3/Pt. These nanoscale patterns were used as hard masks for plasma deep etching of Si to fabricate anti-reflection surfaces. This work demonstrated a gas-phase, DNA-templated fabrication of metal nanostructures, which complements earlier work of solution-based DNA metallization. The nanostructures obtained here are useful for applications in nanoelectronics, nanophotonics, and surface engineering.
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Affiliation(s)
- Liwei Hui
- Department of Chemistry, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - Chen Chen
- Department of Chemistry, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - Min A Kim
- Department of Chemistry, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - Haitao Liu
- Department of Chemistry, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
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9
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Bonvalot M, Vallée C, Mannequin C, Jaffal M, Gassilloud R, Possémé N, Chevolleau T. Area selective deposition using alternate deposition and etch super-cycle strategies. Dalton Trans 2021; 51:442-450. [PMID: 34878446 DOI: 10.1039/d1dt03456a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/01/2023]
Abstract
Area selective deposition (ASD) is a bottom-up process leading to a uniform deposition in only desired areas of a patterned substrate, avoiding the use of photolithography for patterning. However, whatever the strategy used to develop selective deposition by atomic layer deposition, there always comes a time when selectivity becomes defective and growth in undesired substrate areas must be corrected. This leads to the design of ASD by super-cycle alternating deposition and etch. Recent examples from the literature show a great diversity in the design of the etching step and indicate that the optimization of selective deposition by super-cycles is only possible through a careful optimization of the etching step parameters (chemistry, frequency, duration, etc.). In this paper, we discuss how to optimize this step and we show that different approaches can be developed to optimize the overall ASD process throughput, while simultaneously limiting process drift and contamination. We also show that complementary selective properties can prove a valuable leverage enabling ASD processes based on super-cycles, such as structure selective deposition, whereby a difference in thin film morphology in growth and non-growth areas can be smartly taken advantage of during the etching step.
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Affiliation(s)
- Marceline Bonvalot
- University Grenoble Alpes, CNRS, LTM, Grenoble INP, F-38054 Grenoble Cedex, France. .,Institute of Applied Physics, Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, Japan
| | - Christophe Vallée
- University Grenoble Alpes, CNRS, LTM, Grenoble INP, F-38054 Grenoble Cedex, France. .,SUNY POLY, CNSE, Albany, New York 12203, USA.
| | - Cédric Mannequin
- Institute of Applied Physics, Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, Japan
| | - Moustapha Jaffal
- University Grenoble Alpes, CNRS, LTM, Grenoble INP, F-38054 Grenoble Cedex, France.
| | | | | | - Thierry Chevolleau
- University Grenoble Alpes, CNRS, LTM, Grenoble INP, F-38054 Grenoble Cedex, France.
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10
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Song SK, Kim JS, Margavio HRM, Parsons GN. Multimaterial Self-Aligned Nanopatterning by Simultaneous Adjacent Thin Film Deposition and Etching. ACS NANO 2021; 15:12276-12285. [PMID: 34170123 DOI: 10.1021/acsnano.1c04086] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Printed component sizes in electronic circuits are approaching 10 nm, but inherent variability in feature alignment during photolithography poses a fundamental barrier for continued device scaling. Deposition-based self-aligned patterning is being introduced, but nuclei defects remain an overarching problem. This work introduces low-temperature chemically self-aligned film growth via simultaneous thin film deposition and etching in adjacent regions on a nanopatterned surface. During deposition, nucleation defects are avoided in nongrowth regions because deposition reactants are locally consumed via sacrificial etching. For a range of materials and process conditions, thermodynamic modeling confirms that deposition and etching are both energetically favorable. We demonstrate nanoscale patterning of tungsten at 220 °C with simultaneous etching of TiO2. Area selective deposition (ASD) of the sacrificial TiO2 layer produces an orthogonal sequence for self-aligned patterning of two materials on one starting pattern, i.e., TiO2 ASD on SiO2 followed by W ASD on Si-H. Experiments also show capacity for self-aligned dielectric patterning via favorable deposition of AlF3 on Al2O3 at 240 °C with simultaneous atomic layer etching of sacrificial ZnO. Simultaneous deposition and etching provides opportunities for low-temperature bottom-up self-aligned patterning for electronic and other nanoscale systems.
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Affiliation(s)
- Seung Keun Song
- Department of Chemical and Biomolecular Engineering, North Carolina State University, Raleigh, North Carolina 27695, United States
| | - Jung-Sik Kim
- Department of Chemical and Biomolecular Engineering, North Carolina State University, Raleigh, North Carolina 27695, United States
| | - Hannah R M Margavio
- Department of Chemical and Biomolecular Engineering, North Carolina State University, Raleigh, North Carolina 27695, United States
| | - Gregory N Parsons
- Department of Chemical and Biomolecular Engineering, North Carolina State University, Raleigh, North Carolina 27695, United States
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11
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Klement P, Anders D, Gümbel L, Bastianello M, Michel F, Schörmann J, Elm MT, Heiliger C, Chatterjee S. Surface Diffusion Control Enables Tailored-Aspect-Ratio Nanostructures in Area-Selective Atomic Layer Deposition. ACS APPLIED MATERIALS & INTERFACES 2021; 13:19398-19405. [PMID: 33856210 DOI: 10.1021/acsami.0c22121] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Area-selective atomic layer deposition is a key technology for modern microelectronics as it eliminates alignment errors inherent to conventional approaches by enabling material deposition only in specific areas. Typically, the selectivity originates from surface modifications of the substrate that allow or block precursor adsorption. The control of the deposition process currently remains a major challenge as the selectivity of the no-growth areas is lost quickly. Here, we show that surface modifications of the substrate strongly manipulate surface diffusion. The selective deposition of TiO2 on poly(methyl methacrylate) and SiO2 yields localized nanostructures with tailored aspect ratios. Controlling the surface diffusion allows tuning such nanostructures as it boosts the growth rate at the interface of the growth and no-growth areas. Kinetic Monte-Carlo calculations reveal that species move from high to low diffusion areas. Further, we identify the catalytic activity of TiCl4 during the formation of carboxylic acid on poly(methyl methacrylate) as the reaction mechanism responsible for the loss of selectivity and show that process optimization leads to higher selectivity. Our work enables the precise control of area-selective atomic layer deposition on the nanoscale and offers new strategies in area-selective deposition processes by exploiting surface diffusion effects.
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Affiliation(s)
- Philip Klement
- Institute of Experimental Physics I and Center for Materials Research (ZfM/LaMa), Justus Liebig University Giessen, Heinrich-Buff-Ring 16, Giessen D-35392, Germany
| | - Daniel Anders
- Institute of Experimental Physics I and Center for Materials Research (ZfM/LaMa), Justus Liebig University Giessen, Heinrich-Buff-Ring 16, Giessen D-35392, Germany
| | - Lukas Gümbel
- Institute of Experimental Physics I and Center for Materials Research (ZfM/LaMa), Justus Liebig University Giessen, Heinrich-Buff-Ring 16, Giessen D-35392, Germany
| | - Michele Bastianello
- Institute of Experimental Physics I and Center for Materials Research (ZfM/LaMa), Justus Liebig University Giessen, Heinrich-Buff-Ring 16, Giessen D-35392, Germany
| | - Fabian Michel
- Institute of Experimental Physics I and Center for Materials Research (ZfM/LaMa), Justus Liebig University Giessen, Heinrich-Buff-Ring 16, Giessen D-35392, Germany
| | - Jörg Schörmann
- Institute of Experimental Physics I and Center for Materials Research (ZfM/LaMa), Justus Liebig University Giessen, Heinrich-Buff-Ring 16, Giessen D-35392, Germany
| | - Matthias T Elm
- Institute of Experimental Physics I and Center for Materials Research (ZfM/LaMa), Justus Liebig University Giessen, Heinrich-Buff-Ring 16, Giessen D-35392, Germany
- Institute of Physical Chemistry, Justus Liebig University Giessen, Heinrich-Buff-Ring 17, Giessen D-35392, Germany
| | - Christian Heiliger
- Institute of Theoretical Physics and Center for Materials Research (ZfM/LaMa), Justus Liebig University Giessen, Heinrich-Buff-Ring 16, Giessen D-35392, Germany
| | - Sangam Chatterjee
- Institute of Experimental Physics I and Center for Materials Research (ZfM/LaMa), Justus Liebig University Giessen, Heinrich-Buff-Ring 16, Giessen D-35392, Germany
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12
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Bobb-Semple D, Zeng L, Cordova I, Bergsman DS, Nordlund D, Bent SF. Substrate-Dependent Study of Chain Orientation and Order in Alkylphosphonic Acid Self-Assembled Monolayers for ALD Blocking. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2020; 36:12849-12857. [PMID: 33079543 DOI: 10.1021/acs.langmuir.0c01974] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
For years, many efforts in area selective atomic layer deposition (AS-ALD) have focused on trying to achieve high-quality self-assembled monolayers (SAMs), which have been shown by a number of studies to be effective for blocking deposition. Herein, we show that in some cases where a densely packed SAM is not formed, significant ALD inhibition may still be realized. The formation of octadecylphosphonic acid (ODPA) SAMs was evaluated on four metal substrates: Cu, Co, W, and Ru. The molecular orientation, chain packing, and relative surface coverage were evaluated using near-edge X-ray absorption fine structure (NEXAFS), Fourier transform infrared (FTIR) spectroscopy, and electrochemical impedance spectroscopy (EIS). ODPA SAMs formed on Co, Cu, and W showed strong angular dependence of the NEXAFS signal whereas ODPA on Ru did not, suggesting a disordered layer was formed on Ru. Additionally, EIS and FTIR spectroscopy confirmed that Co and Cu form densely packed, "crystal-like" SAMs whereas Ru and W form less dense monolayers, a surprising result since W-ODPA was previously shown to inhibit the ALD of ZnO and Al2O3 best among all the substrates. This work suggests that multiple factors play a role in SAM-based AS-ALD, not just the SAM quality. Therefore, metrological averaging techniques (e.g., WCA and FTIR spectroscopy) commonly used for evaluating SAMs to predict their suitability for ALD inhibition should be supplemented by more atomically sensitive methods. Finally, it highlights important considerations for describing the mechanism of SAM-based selective ALD.
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Affiliation(s)
- Dara Bobb-Semple
- Department of Chemical Engineering, Stanford University, Stanford, California 94305-5025, United States
| | - Li Zeng
- Department of Chemical Engineering, Stanford University, Stanford, California 94305-5025, United States
| | - Isvar Cordova
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - David S Bergsman
- Department of Material Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Dennis Nordlund
- Stanford Linear Accelerator Center, Menlo Park, California 94025, United States
| | - Stacey F Bent
- Department of Chemical Engineering, Stanford University, Stanford, California 94305-5025, United States
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13
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Hui L, Nixon R, Tolman N, Mukai J, Bai R, Wang R, Liu H. Area-Selective Atomic Layer Deposition of Metal Oxides on DNA Nanostructures and Its Applications. ACS NANO 2020; 14:13047-13055. [PMID: 33048526 DOI: 10.1021/acsnano.0c04493] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We demonstrate area-selective atomic layer deposition (ALD) of oxides on DNA nanostructures. Area-selective ALD of Al2O3, TiO2, and HfO2 was successfully achieved on both 2D and 3D DNA nanostructures deposited on a polystyrene (PS) substrate. The resulting DNA-inorganic hybrid structure was used as a hard mask to achieve deep etching of a Si wafer for antireflection applications. ALD is a widely used process in coating and thin film deposition; our work points to a way to pattern oxide materials using DNA templates and to enhance the chemical/physical stability of DNA nanostructures for applications in surface engineering.
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Affiliation(s)
- Liwei Hui
- Department of Chemistry, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - Rachel Nixon
- Department of Chemistry, Missouri University of Science and Technology, Rolla, Missouri 65409, United States
| | - Nathan Tolman
- Department of Chemistry, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - Jason Mukai
- Department of Chemistry, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - Ruobing Bai
- Department of Chemistry, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - Risheng Wang
- Department of Chemistry, Missouri University of Science and Technology, Rolla, Missouri 65409, United States
| | - Haitao Liu
- Department of Chemistry, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
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14
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Lundy R, Yadav P, Prochukhan N, Giraud EC, O'Mahony TF, Selkirk A, Mullen E, Conway J, Turner M, Daniels S, Mani-Gonzalez PG, Snelgrove M, Bogan J, McFeely C, O'Connor R, McGlynn E, Hughes G, Cummins C, Morris MA. Precise Definition of a "Monolayer Point" in Polymer Brush Films for Fabricating Highly Coherent TiO 2 Thin Films by Vapor-Phase Infiltration. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2020; 36:12394-12402. [PMID: 33021792 DOI: 10.1021/acs.langmuir.0c02512] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
In this work, we show that in order to fabricate coherent titania (TiO2) films with precise thickness control, it is critical to generate a complete polymer brush monolayer. To date, demonstrations of such dense polymer monolayer formation that can be utilized for inorganic infiltration have been elusive. We describe a versatile bottom-up approach to covalently and rapidly (60 s processing) graft hydroxyl-terminated poly(2-vinyl pyridine) (P2VP-OH) polymers on silicon substrates. P2VP-OH monolayer films of varying thicknesses can subsequently be used to fabricate high-quality TiO2 films. Our innovative strategy is based upon room-temperature titanium vapor-phase infiltration of the grafted P2VP-OH polymer brushes that can produce TiO2 nanofilms of 2-4 nm thicknesses. Crucial parameters are explored, including molecular weight and solution concentration for grafting dense P2VP-OH monolayers from the liquid phase with high coverage and uniformity across wafer-scale areas (>2 cm2). Additionally, we compare the P2VP-OH polymer systems with another reactive polymer, poly(methyl methacrylate)-OH, and a relatively nonreactive polymer, poly(styrene)-OH. Furthermore, we prove the latter to be effective for surface blocking and deactivation. We show a simple process to graft monolayers for polymers that are weakly interacting with one another but more challenging for reactive systems. Our methodology provides new insight into the rapid grafting of polymer brushes and their ability to form TiO2 films. We believe that the results described herein are important for further expanding the use of reactive and unreactive polymers for fields including area-selective deposition, solar cell absorber layers, and antimicrobial surface coatings.
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Affiliation(s)
- Ross Lundy
- AMBER Research Centre and School of Chemistry, Trinity College Dublin, Dublin 2, Ireland
| | - Pravind Yadav
- AMBER Research Centre and School of Chemistry, Trinity College Dublin, Dublin 2, Ireland
| | - Nadezda Prochukhan
- AMBER Research Centre and School of Chemistry, Trinity College Dublin, Dublin 2, Ireland
| | - Elsa C Giraud
- AMBER Research Centre and School of Chemistry, Trinity College Dublin, Dublin 2, Ireland
| | - Tom F O'Mahony
- AMBER Research Centre and School of Chemistry, Trinity College Dublin, Dublin 2, Ireland
| | - Andrew Selkirk
- AMBER Research Centre and School of Chemistry, Trinity College Dublin, Dublin 2, Ireland
| | - Eleanor Mullen
- AMBER Research Centre and School of Chemistry, Trinity College Dublin, Dublin 2, Ireland
| | - Jim Conway
- National Centre for Plasma Science and Technology, Dublin City University, Dublin 9, Ireland
| | - Miles Turner
- National Centre for Plasma Science and Technology, Dublin City University, Dublin 9, Ireland
| | - Stephen Daniels
- National Centre for Plasma Science and Technology, Dublin City University, Dublin 9, Ireland
| | - P G Mani-Gonzalez
- Institute of Engineering and Technology, Department of Physics and Mathematics, Autonomous University of Ciudad Juárez, Cd. Juárez 32310, Mexico
| | - Matthew Snelgrove
- School of Physical Sciences, Dublin City University, Glasnevin, Dublin 9, Ireland
| | - Justin Bogan
- School of Physical Sciences, Dublin City University, Glasnevin, Dublin 9, Ireland
| | - Caitlin McFeely
- School of Physical Sciences, Dublin City University, Glasnevin, Dublin 9, Ireland
| | - Robert O'Connor
- School of Physical Sciences, Dublin City University, Glasnevin, Dublin 9, Ireland
| | - Enda McGlynn
- National Centre for Plasma Science and Technology, Dublin City University, Dublin 9, Ireland
- School of Physical Sciences, Dublin City University, Glasnevin, Dublin 9, Ireland
| | - Greg Hughes
- National Centre for Plasma Science and Technology, Dublin City University, Dublin 9, Ireland
- School of Physical Sciences, Dublin City University, Glasnevin, Dublin 9, Ireland
| | - Cian Cummins
- AMBER Research Centre and School of Chemistry, Trinity College Dublin, Dublin 2, Ireland
| | - Michael A Morris
- AMBER Research Centre and School of Chemistry, Trinity College Dublin, Dublin 2, Ireland
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15
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Lee S, Kim M, Baek G, Kim HM, Van TTN, Gwak D, Heo K, Shong B, Park JS. Thermal Annealing of Molecular Layer-Deposited Indicone Toward Area-Selective Atomic Layer Deposition. ACS APPLIED MATERIALS & INTERFACES 2020; 12:43212-43221. [PMID: 32841556 DOI: 10.1021/acsami.0c10322] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Area-selective atomic layer deposition (AS-ALD) is a promising technique for fine nanoscale patterning, which may overcome the drawbacks of conventional top-down approaches for the fabrication of future electronic devices. However, conventional materials and processes often employed for AS-ALD are inadequate for conformal and rapid processing. We introduce a new strategy for AS-ALD based on molecular layer deposition (MLD) that is compatible with large-scale manufacturing. Conformal thin films of "indicone" (indium alkoxide polymer) are fabricated by MLD using INCA-1 (bis(trimethylsily)amidodiethylindium) and HQ (hydroquinone). Then, the MLD indicone films are annealed by a thermal heat treatment under vacuum. The properties of the indicone thin films with different annealing temperatures were measured with multiple optical, physical, and chemical techniques. Interestingly, a nearly complete removal of indium from the film was observed upon annealing to ca. 450 °C and above. The chemical mechanism of the thermal transformation of the indicone film was investigated by density functional theory calculations. Then, the annealed indicone thin films were applied as an inhibiting layer for the subsequent ALD of ZnO, where the deposition of approximately 20 ALD cycles (equivalent to a thickness of approximately 4 nm) of ZnO was successfully inhibited. Finally, patterns of annealed MLD indicone/Si substrates were created on which the area-selective deposition of ZnO was demonstrated.
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Affiliation(s)
- Seunghwan Lee
- Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
| | - Miso Kim
- Department of Chemical Engineering, Hongik University, 94 Wausan-ro, Mapo-gu, Seoul 04066, Republic of Korea
| | - GeonHo Baek
- Division of Nano-Scale Semiconductor Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
| | - Hye-Mi Kim
- Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
| | - Tran Thi Ngoc Van
- Department of Chemical Engineering, Hongik University, 94 Wausan-ro, Mapo-gu, Seoul 04066, Republic of Korea
| | - Dham Gwak
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea
| | - Kwang Heo
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea
| | - Bonggeun Shong
- Department of Chemical Engineering, Hongik University, 94 Wausan-ro, Mapo-gu, Seoul 04066, Republic of Korea
| | - Jin-Seong Park
- Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
- Division of Nano-Scale Semiconductor Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
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16
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Liu TL, Nardi KL, Draeger N, Hausmann DM, Bent SF. Effect of Multilayer versus Monolayer Dodecanethiol on Selectivity and Pattern Integrity in Area-Selective Atomic Layer Deposition. ACS APPLIED MATERIALS & INTERFACES 2020; 12:42226-42235. [PMID: 32805867 DOI: 10.1021/acsami.0c08873] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Monolayer and multilayer dodecanethiols (DDT) can be assembled onto a copper surface from the vapor phase depending on the initial oxidation state of the copper. The ability of the copper-bound dodecanethiolates to block atomic layer deposition (ALD) and the resulting behavior at the interfaces of Cu/SiO2 patterns during area-selective ALD (AS-ALD) are compared between mono- and multilayers. We show that multilayer DDT is ∼7 times more effective at blocking ZnO ALD from diethylzinc and water than is monolayer DDT. Conversely, monolayer DDT exhibits better performance than does multilayer DDT in blocking of Al2O3 ALD from trimethylaluminum and water. Investigation into interfacial effects at the interface between Cu and SiO2 on Cu/SiO2 patterns reveals both a gap at the SiO2 edges and a pitch size-dependent nucleation delay of ZnO ALD on SiO2 regions of multilayer DDT-coated patterns. In contrast, no impact on ZnO ALD is observed on the SiO2 regions of monolayer DDT-coated patterns. We also show that these interfacial effects depend on the ALD chemistry. Whereas an Al2O3 film grows on the TaN diffusion barrier of a DDT-treated Cu/SiO2 pattern, the ZnO film does not. These results indicate that the structure of the DDT layer and the ALD precursor chemistry both play an important role in achieving AS-ALD.
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Affiliation(s)
| | - Katie L Nardi
- Lam Research Corporation, Fremont, California 94538, United States
| | - Nerissa Draeger
- Lam Research Corporation, Fremont, California 94538, United States
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17
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De Coster V, Poelman H, Dendooven J, Detavernier C, Galvita VV. Designing Nanoparticles and Nanoalloys for Gas-Phase Catalysis with Controlled Surface Reactivity Using Colloidal Synthesis and Atomic Layer Deposition. Molecules 2020; 25:E3735. [PMID: 32824236 PMCID: PMC7464189 DOI: 10.3390/molecules25163735] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/10/2020] [Revised: 08/10/2020] [Accepted: 08/14/2020] [Indexed: 11/17/2022] Open
Abstract
Supported nanoparticles are commonly applied in heterogeneous catalysis. The catalytic performance of these solid catalysts is, for a given support, dependent on the nanoparticle size, shape, and composition, thus necessitating synthesis techniques that allow for preparing these materials with fine control over those properties. Such control can be exploited to deconvolute their effects on the catalyst's performance, which is the basis for knowledge-driven catalyst design. In this regard, bottom-up synthesis procedures based on colloidal chemistry or atomic layer deposition (ALD) have proven successful in achieving the desired level of control for a variety of fundamental studies. This review aims to give an account of recent progress made in the two aforementioned synthesis techniques for the application of controlled catalytic materials in gas-phase catalysis. For each technique, the focus goes to mono- and bimetallic materials, as well as to recent efforts in enhancing their performance by embedding colloidal templates in porous oxide phases or by the deposition of oxide overlayers via ALD. As a recent extension to the latter, the concept of area-selective ALD for advanced atomic-scale catalyst design is discussed.
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Affiliation(s)
- Valentijn De Coster
- Laboratory for Chemical Technology (LCT), Ghent University, Technologiepark 125, 9052 Ghent, Belgium; (V.D.C.); (H.P.)
| | - Hilde Poelman
- Laboratory for Chemical Technology (LCT), Ghent University, Technologiepark 125, 9052 Ghent, Belgium; (V.D.C.); (H.P.)
| | - Jolien Dendooven
- Department of Solid State Sciences, CoCooN, Ghent University, Krijgslaan 281/S1, 9000 Ghent, Belgium; (J.D.); (C.D.)
| | - Christophe Detavernier
- Department of Solid State Sciences, CoCooN, Ghent University, Krijgslaan 281/S1, 9000 Ghent, Belgium; (J.D.); (C.D.)
| | - Vladimir V. Galvita
- Laboratory for Chemical Technology (LCT), Ghent University, Technologiepark 125, 9052 Ghent, Belgium; (V.D.C.); (H.P.)
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18
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McNeill JM, Nama N, Braxton JM, Mallouk TE. Wafer-Scale Fabrication of Micro- to Nanoscale Bubble Swimmers and Their Fast Autonomous Propulsion by Ultrasound. ACS NANO 2020; 14:7520-7528. [PMID: 32432850 DOI: 10.1021/acsnano.0c03311] [Citation(s) in RCA: 35] [Impact Index Per Article: 8.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Fuel-free, biocompatible swimmers with dimensions smaller than one micrometer have the potential to revolutionize the way we study and manipulate microscopic systems. Sub-micrometer, metallic Janus particles can be propelled rapidly and autonomously by acoustically induced fluid streaming, but their operation at acoustic pressure nodes limits their utility. In contrast, bubble-based microswimmers have an "on board" resonant cavity that enables them to operate far from the source of acoustic power. So far, they have been fabricated by direct writing techniques that limit both their minimum dimensions and the number that can be produced. Consequently, the size scaling of the properties of bubble swimmers has not been explored experimentally. Additionally, 3D autonomous motion has not yet been demonstrated for this type of swimmer. We describe here a method for fabricating bubble swimmers in large numbers (>109) with sizes ranging from 5 μm to 500 nm without direct writing or photolithographic tools. These swimmers follow a previously proposed scaling theory and reveal useful phenomena that enable their propulsion in different modes in the same experiment: with magnetic steering, autonomously in 3D, and in frequency-specific autonomous modes. These interesting behaviors are relevant to possible applications of autonomously moving micro- and nanorobots.
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Affiliation(s)
- Jeffrey M McNeill
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Nitesh Nama
- Department of Surgery, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Jesse M Braxton
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Thomas E Mallouk
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
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19
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Mohabir AT, Tutuncuoglu G, Weiss T, Vogel EM, Filler MA. Bottom-Up Masking of Si/Ge Surfaces and Nanowire Heterostructures via Surface-Initiated Polymerization and Selective Etching. ACS NANO 2020; 14:282-288. [PMID: 31854980 DOI: 10.1021/acsnano.9b04363] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The fully bottom-up and scalable synthesis of complex micro/nanoscale materials and functional devices requires masking methods to define key features and direct the deposition of various coatings and films. Here, we demonstrate selective coaxial lithography via etching of surfaces (SCALES), an enabling bottom-up process to add polymer masks to micro/nanoscale objects. SCALES is a three-step process, including (1) bottom-up synthesis of compositionally modulated structures, (2) surface-initiated polymerization of a conformal mask, and (3) selective removal of the mask only from regions whose underlying surface is susceptible to an etchant. We demonstrate the key features of and characterize the SCALES process with a series of model Si/Ge systems: Si and Ge wafers, Si and Ge nanowires, and Si/Ge heterostructure nanowires.
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Affiliation(s)
- Amar T Mohabir
- School of Chemical & Biomolecular Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States
| | - Gozde Tutuncuoglu
- School of Chemical & Biomolecular Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States
| | - Trent Weiss
- School of Chemical & Biomolecular Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States
| | - Eric M Vogel
- School of Materials Science & Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States
| | - Michael A Filler
- School of Chemical & Biomolecular Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States
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20
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Mackus AJM, Merkx MJM, Kessels WMM. From the Bottom-Up: Toward Area-Selective Atomic Layer Deposition with High Selectivity. CHEMISTRY OF MATERIALS : A PUBLICATION OF THE AMERICAN CHEMICAL SOCIETY 2019; 31:2-12. [PMID: 30774194 PMCID: PMC6369656 DOI: 10.1021/acs.chemmater.8b03454] [Citation(s) in RCA: 81] [Impact Index Per Article: 16.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/13/2018] [Revised: 11/25/2018] [Indexed: 05/19/2023]
Abstract
Bottom-up nanofabrication by area-selective atomic layer deposition (ALD) is currently gaining momentum in semiconductor processing, because of the increasing need for eliminating the edge placement errors of top-down processing. Moreover, area-selective ALD offers new opportunities in many other areas such as the synthesis of catalysts with atomic-level control. This Perspective provides an overview of the current developments in the field of area-selective ALD, discusses the challenge of achieving a high selectivity, and provides a vision for how area-selective ALD processes can be improved. A general cause for the loss of selectivity during deposition is that the character of surfaces on which no deposition should take place changes when it is exposed to the ALD chemistry. A solution is to implement correction steps during ALD involving for example surface functionalization or selective etching. This leads to the development of advanced ALD cycles by combining conventional two-step ALD cycles with correction steps in multistep cycle and/or supercycle recipes.
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21
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Peña LF, Veyan JF, Todd MA, Derecskei-Kovacs A, Chabal YJ. Vapor-Phase Cleaning and Corrosion Inhibition of Copper Films by Ethanol and Heterocyclic Amines. ACS APPLIED MATERIALS & INTERFACES 2018; 10:38610-38620. [PMID: 30335353 DOI: 10.1021/acsami.8b13438] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Cleaning and passivation of metal surfaces are necessary steps for selective film deposition processes that are attractive for some microelectronic applications (e.g., fully aligned vias or self-aligned contacts). For copper, there is limited knowledge about the mechanisms of the copper oxide reduction process and subsequent passivation layer formation reactions. We have investigated the in situ cleaning (i.e., oxidation and reduction by vapor-phase species) and passivation of chemical-mechanical polishing (CMP)-prepared Cu films in an effort to derive the mechanisms associated with selectively tailoring the surface chemistry. By monitoring the interaction of vapor-phase ethanol with the surface species generated after ozone cleaning at 300 °C, we find that the optimum procedure to remove these species and avoid byproduct redeposition is to use atomic layer deposition (ALD)-like binary cycles of ethanol and N2, with active pumping. We have further explored passivation of clean Cu using benzotriazole and 2,2'-bipyridine in an ALD environment. Both molecules chemisorb on clean Cu in an upright orientation, with respect to the metal surface at temperatures higher than the melting point of the organic inhibitors (100 ≤ T < 300 °C). Both molecules desorb without decomposition from clean Cu above 300 °C but not from Cu2O. Previous studies related to the passivation of Cu surfaces using heterocyclic amines have focused on solution-based or ultrahigh vacuum applications of the passivation molecules onto single crystalline Cu samples. The present work explores more industrially relevant vapor-phase passivation of CMP-cleaned, electroplated Cu samples using ALD-like processing conditions and in situ vapor-phase cleaning.
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Affiliation(s)
- Luis Fabián Peña
- Department of Materials Science & Engineering , The University of Texas at Dallas , Richardson , Texas 75080 , United States
| | - Jean-Francois Veyan
- Department of Materials Science & Engineering , The University of Texas at Dallas , Richardson , Texas 75080 , United States
| | - Michael A Todd
- Versum Materials, Inc. , 8555 South River Parkway , Tempe , Arizona 85284 , United States
| | - Agnes Derecskei-Kovacs
- Versum Materials, Inc. , 8555 South River Parkway , Tempe , Arizona 85284 , United States
| | - Yves J Chabal
- Department of Materials Science & Engineering , The University of Texas at Dallas , Richardson , Texas 75080 , United States
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22
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Nanoparticle sintering in atomic layer deposition of supported catalysts: Kinetic modeling of the size distribution. Catal Today 2018. [DOI: 10.1016/j.cattod.2018.02.020] [Citation(s) in RCA: 34] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/24/2022]
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23
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Singh J, Thissen NFW, Kim WH, Johnson H, Kessels WMM, Bol AA, Bent SF, Mackus AJM. Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation. CHEMISTRY OF MATERIALS : A PUBLICATION OF THE AMERICAN CHEMICAL SOCIETY 2018; 30:663-670. [PMID: 29503508 PMCID: PMC5828705 DOI: 10.1021/acs.chemmater.7b03818] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/08/2017] [Revised: 11/30/2017] [Indexed: 05/12/2023]
Abstract
Area-selective atomic layer deposition (ALD) is envisioned to play a key role in next-generation semiconductor processing and can also provide new opportunities in the field of catalysis. In this work, we developed an approach for the area-selective deposition of metal oxides on noble metals. Using O2 gas as co-reactant, area-selective ALD has been achieved by relying on the catalytic dissociation of the oxygen molecules on the noble metal surface, while no deposition takes place on inert surfaces that do not dissociate oxygen (i.e., SiO2, Al2O3, Au). The process is demonstrated for selective deposition of iron oxide and nickel oxide on platinum and iridium substrates. Characterization by in situ spectroscopic ellipsometry, transmission electron microscopy, scanning Auger electron spectroscopy, and X-ray photoelectron spectroscopy confirms a very high degree of selectivity, with a constant ALD growth rate on the catalytic metal substrates and no deposition on inert substrates, even after 300 ALD cycles. We demonstrate the area-selective ALD approach on planar and patterned substrates and use it to prepare Pt/Fe2O3 core/shell nanoparticles. Finally, the approach is proposed to be extendable beyond the materials presented here, specifically to other metal oxide ALD processes for which the precursor requires a strong oxidizing agent for growth.
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Affiliation(s)
- Joseph
A. Singh
- Department
of Chemistry, Stanford University, 333 Campus Drive, Stanford, California 94305, United States
| | - Nick F. W. Thissen
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, 5600 MB Eindhoven, Netherlands
| | - Woo-Hee Kim
- Division
of Advanced Materials Engineering, Chonbuk
National University, 567 Baekje-daero, deokjin-gu, Jeonju-si, Jeollabuk-do, 54896, Republic of Korea
- Department
of Chemical Engineering, Stanford University, 443 Via Ortega, Stanford, California 94305, United States
| | - Hannah Johnson
- Advanced
Technology 1, Toyota Motor Europe NV/SA, Hoge Wei 33A, B-1930 Zaventem, Belgium
| | - Wilhelmus M. M. Kessels
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, 5600 MB Eindhoven, Netherlands
| | - Ageeth A. Bol
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, 5600 MB Eindhoven, Netherlands
| | - Stacey F. Bent
- Department
of Chemical Engineering, Stanford University, 443 Via Ortega, Stanford, California 94305, United States
- E-mail: (S.F.B.)
| | - Adriaan J. M. Mackus
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, 5600 MB Eindhoven, Netherlands
- Department
of Chemical Engineering, Stanford University, 443 Via Ortega, Stanford, California 94305, United States
- E-mail: (A.J.M.M.)
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24
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Seo S, Yeo BC, Han SS, Yoon CM, Yang JY, Yoon J, Yoo C, Kim HJ, Lee YB, Lee SJ, Myoung JM, Lee HBR, Kim WH, Oh IK, Kim H. Reaction Mechanism of Area-Selective Atomic Layer Deposition for Al 2O 3 Nanopatterns. ACS APPLIED MATERIALS & INTERFACES 2017; 9:41607-41617. [PMID: 29111636 DOI: 10.1021/acsami.7b13365] [Citation(s) in RCA: 27] [Impact Index Per Article: 3.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The reaction mechanism of area-selective atomic layer deposition (AS-ALD) of Al2O3 thin films using self-assembled monolayers (SAMs) was systematically investigated by theoretical and experimental studies. Trimethylaluminum (TMA) and H2O were used as the precursor and oxidant, respectively, with octadecylphosphonic acid (ODPA) as an SAM to block Al2O3 film formation. However, Al2O3 layers began to form on the ODPA SAMs after several cycles, despite reports that CH3-terminated SAMs cannot react with TMA. We showed that TMA does not react chemically with the SAM but is physically adsorbed, acting as a nucleation site for Al2O3 film growth. Moreover, the amount of physisorbed TMA was affected by the partial pressure. By controlling it, we developed a new AS-ALD Al2O3 process with high selectivity, which produces films of ∼60 nm thickness over 370 cycles. The successful deposition of Al2O3 thin film patterns using this process is a breakthrough technique in the field of nanotechnology.
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Affiliation(s)
| | - Byung Chul Yeo
- Center of Computational Science, Korea Institute of Science and Technology (KIST) , Hwarangno 14-gil 5, Seoul 02792, Republic of Korea
| | - Sang Soo Han
- Center of Computational Science, Korea Institute of Science and Technology (KIST) , Hwarangno 14-gil 5, Seoul 02792, Republic of Korea
| | | | - Joon Young Yang
- LG Display Co., Ltd. , 245, LG-ro, Wollong-myeon, Paju-si, Gyeonggi-do 10845, Republic of Korea
| | - Jonggeun Yoon
- LG Display Co., Ltd. , 245, LG-ro, Wollong-myeon, Paju-si, Gyeonggi-do 10845, Republic of Korea
| | - Choongkeun Yoo
- LG Display Co., Ltd. , 245, LG-ro, Wollong-myeon, Paju-si, Gyeonggi-do 10845, Republic of Korea
| | - Ho-Jin Kim
- LG Display Co., Ltd. , 245, LG-ro, Wollong-myeon, Paju-si, Gyeonggi-do 10845, Republic of Korea
| | - Yong-Baek Lee
- LG Display Co., Ltd. , 245, LG-ro, Wollong-myeon, Paju-si, Gyeonggi-do 10845, Republic of Korea
| | | | | | - Han-Bo-Ram Lee
- Department of Materials Science and Engineering, Incheon National University , 119 Academy-ro, Yeonsu-gu, Incheon 22012, Republic of Korea
| | - Woo-Hee Kim
- Division of Advanced Materials Engineering, Chonbuk National University , Jeonbuk 54896, Republic of Korea
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25
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Sampson MD, Emery JD, Pellin MJ, Martinson ABF. Inhibiting Metal Oxide Atomic Layer Deposition: Beyond Zinc Oxide. ACS APPLIED MATERIALS & INTERFACES 2017; 9:33429-33436. [PMID: 28379011 DOI: 10.1021/acsami.7b01410] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
Atomic layer deposition (ALD) of several metal oxides is selectivity inhibited on alkanethiol self-assembled monolayers (SAMs) on Au, and the eventual nucleation mechanism is investigated. The inhibition ability of the SAM is significantly improved by the in situ H2-plasma pretreatment of the Au substrate prior to the gas-phase deposition of a long-chain alkanethiol, 1-dodecanethiol (DDT). This more rigorous surface preparation inhibits even aggressive oxide ALD precursors, including trimethylaluminum and water, for at least 20 cycles. We study the effect that the ALD precursor purge times, growth temperature, alkanethiol chain length, alkanethiol deposition time, and plasma treatment time have on Al2O3 ALD inhibition. This is the first example of Al2O3 ALD inhibition from a vapor-deposited SAM. The inhibitions of Al2O3, ZnO, and MnO ALD processes are compared, revealing the versatility of this selective surface treatment. Atomic force microscopy and grazing-incidence X-ray fluorescence further reveal insight into the mechanism by which the well-defined surface chemistry of ALD may eventually be circumvented to allow metal oxide nucleation and growth on SAM-modified surfaces.
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Affiliation(s)
- Matthew D Sampson
- Material Science Division, Argonne National Laboratory , 9700 South Cass Avenue, Lemont, Illinois 60439, United States
| | - Jonathan D Emery
- Material Science Division, Argonne National Laboratory , 9700 South Cass Avenue, Lemont, Illinois 60439, United States
- Department of Materials Science and Engineering, Northwestern University , 2220 Campus Drive, Evanston, Illinois 60208, United States
| | - Michael J Pellin
- Material Science Division, Argonne National Laboratory , 9700 South Cass Avenue, Lemont, Illinois 60439, United States
| | - Alex B F Martinson
- Material Science Division, Argonne National Laboratory , 9700 South Cass Avenue, Lemont, Illinois 60439, United States
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26
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Junige M, Löffler M, Geidel M, Albert M, Bartha JW, Zschech E, Rellinghaus B, Dorp WFV. Area-selective atomic layer deposition of Ru on electron-beam-written Pt(C) patterns versus SiO 2 substratum. NANOTECHNOLOGY 2017; 28:395301. [PMID: 28837051 DOI: 10.1088/1361-6528/aa8844] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Area selectivity is an emerging sub-topic in the field of atomic layer deposition (ALD), which employs opposite nucleation phenomena to distinct heterogeneous starting materials on a surface. In this paper, we intend to grow Ru exclusively on locally pre-defined Pt patterns, while keeping a SiO2 substratum free from any deposition. In a first step, we study in detail the Ru ALD nucleation on SiO2 and clarify the impact of the set-point temperature. An initial incubation period with actually no growth was revealed before a formation of minor, isolated RuO x islands; clearly no continuous Ru layer formed on SiO2. A lower temperature was beneficial in facilitating a longer incubation and consequently a wider window for (inherent) selectivity. In a second step, we write C-rich Pt micro-patterns on SiO2 by focused electron-beam-induced deposition (FEBID), varying the number of FEBID scans at two electron beam acceleration voltages. Subsequently, the localized Pt(C) deposits are pre-cleaned in O2 and overgrown by Ru ALD. Already sub-nanometer-thin Pt(C) patterns, which were supposedly purified into some form of Pt(O x ), acted as very effective activation for the locally restricted, thus area-selective ALD growth of a pure, continuous Ru covering, whereas the SiO2 substratum sufficiently inhibited towards no growth. FEBID at lower electron energy reduced unwanted stray deposition and achieved well-resolved pattern features. We access the nucleation phenomena by utilizing a hybrid metrology approach, which uniquely combines in-situ real-time spectroscopic ellipsometry, in-vacuo x-ray photoelectron spectroscopy, ex-situ high-resolution scanning electron microscopy, and mapping energy-dispersive x-ray spectroscopy.
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Affiliation(s)
- Marcel Junige
- Technische Universität Dresden, Faculty of Electrical and Computer Engineering, Institute of Semiconductors and Microsystems (IHM), D-01062 Dresden, Germany
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27
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Mameli A, Merkx MJM, Karasulu B, Roozeboom F, Kessels W(EM, Mackus AJM. Area-Selective Atomic Layer Deposition of SiO 2 Using Acetylacetone as a Chemoselective Inhibitor in an ABC-Type Cycle. ACS NANO 2017; 11:9303-9311. [PMID: 28850774 PMCID: PMC5665545 DOI: 10.1021/acsnano.7b04701] [Citation(s) in RCA: 43] [Impact Index Per Article: 6.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/05/2017] [Accepted: 08/29/2017] [Indexed: 05/28/2023]
Abstract
Area-selective atomic layer deposition (ALD) is rapidly gaining interest because of its potential application in self-aligned fabrication schemes for next-generation nanoelectronics. Here, we introduce an approach for area-selective ALD that relies on the use of chemoselective inhibitor molecules in a three-step (ABC-type) ALD cycle. A process for area-selective ALD of SiO2 was developed comprising acetylacetone inhibitor (step A), bis(diethylamino)silane precursor (step B), and O2 plasma reactant (step C) pulses. Our results show that this process allows for selective deposition of SiO2 on GeO2, SiNx, SiO2, and WO3, in the presence of Al2O3, TiO2, and HfO2 surfaces. In situ Fourier transform infrared spectroscopy experiments and density functional theory calculations underline that the selectivity of the approach stems from the chemoselective adsorption of the inhibitor. The selectivity between different oxide starting surfaces and the compatibility with plasma-assisted or ozone-based ALD are distinct features of this approach. Furthermore, the approach offers the opportunity of tuning the substrate-selectivity by proper selection of inhibitor molecules.
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Affiliation(s)
- Alfredo Mameli
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
| | - Marc J. M. Merkx
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
| | - Bora Karasulu
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
| | - Fred Roozeboom
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
- TNO-Holst
Centre, High Tech Campus
31, 5656 AE Eindhoven, The Netherlands
| | | | - Adriaan J. M. Mackus
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
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28
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Zyulkov I, Krishtab M, De Gendt S, Armini S. Selective Ru ALD as a Catalyst for Sub-Seven-Nanometer Bottom-Up Metal Interconnects. ACS APPLIED MATERIALS & INTERFACES 2017; 9:31031-31041. [PMID: 28820569 DOI: 10.1021/acsami.7b07811] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Integrating bottom-up area-selective building-blocks in microelectronics has a disruptive potential because of the unique capability of engineering new structures and architectures. Atomic layer deposition (ALD) is an enabling technology, yet understanding the surfaces and their modification is crucial to leverage area-selective ALD (AS-ALD) in this field. The understanding of general selectivity mechanisms and the compatibility of plasma surface modifications with existing materials and processes, both at research and production scale, will greatly facilitate AS-ALD integration in microelectronics. The use of self-assembled monolayers to inhibit the nucleation and growth of ALD films is still scarcely compatible with nanofabrication because of defectivity and downscaling limitations. Alternatively, in this Research Article, we demonstrate a straightforward H2 plasma surface modification process capable of inhibiting Ru ALD nucleation on an amorphous carbon surface while still allowing instantaneous nucleation and linear growth on Si-containing materials. Furthermore, we demonstrate how AS-ALD enables previously inaccessible routes, such as bottom-up electroless metal deposition in a dual damascene etch-damage free low-k replacement scheme. Specifically, our approach offers a general strategy for scalable ultrafine 3D nanostructures without the burden of subtractive metal patterning and high cost chemical mechanical planarization processes.
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Affiliation(s)
- Ivan Zyulkov
- KU Leuven , Department of Chemistry, Faculty of Science, B-3001 Leuven, Belgium
- Imec , Kapeldreef 75, B-3001 Leuven, Belgium
| | - Mikhail Krishtab
- KU Leuven , Department of Chemistry, Faculty of Science, B-3001 Leuven, Belgium
- Imec , Kapeldreef 75, B-3001 Leuven, Belgium
| | - Stefan De Gendt
- KU Leuven , Department of Chemistry, Faculty of Science, B-3001 Leuven, Belgium
- Imec , Kapeldreef 75, B-3001 Leuven, Belgium
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29
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Cummins C, Shaw MT, Morris MA. Area Selective Polymer Brush Deposition. Macromol Rapid Commun 2017; 38. [DOI: 10.1002/marc.201700252] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/19/2017] [Revised: 05/24/2017] [Indexed: 11/10/2022]
Affiliation(s)
- Cian Cummins
- Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) & AMBER CentreTrinity College Dublin 5 College Green Dublin 2 Ireland
| | | | - Michael A. Morris
- Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) & AMBER CentreTrinity College Dublin 5 College Green Dublin 2 Ireland
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30
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Kerrigan MM, Klesko JP, Rupich SM, Dezelah CL, Kanjolia RK, Chabal YJ, Winter CH. Substrate selectivity in the low temperature atomic layer deposition of cobalt metal films from bis(1,4-di-tert-butyl-1,3-diazadienyl)cobalt and formic acid. J Chem Phys 2017; 146:052813. [DOI: 10.1063/1.4968848] [Citation(s) in RCA: 31] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/17/2023] Open
Affiliation(s)
- Marissa M. Kerrigan
- Department of Chemistry, Wayne State University, Detroit, Michigan 48202, USA
| | - Joseph P. Klesko
- Department of Chemistry, Wayne State University, Detroit, Michigan 48202, USA
- Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080-3021, USA
| | - Sara M. Rupich
- Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080-3021, USA
| | - Charles L. Dezelah
- EMD Performance Materials, 1429 Hilldale Ave, Haverhill, Massachusetts 01832, USA
| | - Ravindra K. Kanjolia
- EMD Performance Materials, 1429 Hilldale Ave, Haverhill, Massachusetts 01832, USA
| | - Yves J. Chabal
- Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080-3021, USA
| | - Charles H. Winter
- Department of Chemistry, Wayne State University, Detroit, Michigan 48202, USA
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31
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Minaye Hashemi FS, Birchansky BR, Bent SF. Selective Deposition of Dielectrics: Limits and Advantages of Alkanethiol Blocking Agents on Metal-Dielectric Patterns. ACS APPLIED MATERIALS & INTERFACES 2016; 8:33264-33272. [PMID: 27934166 DOI: 10.1021/acsami.6b09960] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Area selective atomic layer deposition has the potential to significantly improve current fabrication approaches by introducing a bottom-up process in which robust and conformal thin films are selectively deposited onto patterned substrates. In this paper, we demonstrate selective deposition of dielectrics on metal/dielectric patterns by protecting metal surfaces using alkanethiol blocking layers. We examine alkanethiol self-assembled monolayers (SAMs) with two different chain lengths deposited both in vapor and in solution and show that in both systems, thiols have the ability to block surfaces against dielectric deposition. We show that thiol molecules can displace Cu oxide, opening possibilities for easier sample preparation. A vapor-deposited alkanethiol SAM is shown to be more effective than a solution-deposited SAM in blocking ALD, even after only 30 s of exposure. The vapor deposition also results in a much better thiol regeneration process and may facilitate deposition of the SAMs on porous or three-dimensional structures, allowing for the fabrication of next generation electronic devices.
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Affiliation(s)
- Fatemeh Sadat Minaye Hashemi
- Department of Materials Science and Engineering, and ‡Department of Chemical Engineering, Stanford University , Stanford, California 94305-5025, United States
| | - Bradlee R Birchansky
- Department of Materials Science and Engineering, and ‡Department of Chemical Engineering, Stanford University , Stanford, California 94305-5025, United States
| | - Stacey F Bent
- Department of Materials Science and Engineering, and ‡Department of Chemical Engineering, Stanford University , Stanford, California 94305-5025, United States
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32
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Haider A, Deminskyi P, Khan TM, Eren H, Biyikli N. Area-Selective Atomic Layer Deposition Using an Inductively Coupled Plasma Polymerized Fluorocarbon Layer: A Case Study for Metal Oxides. THE JOURNAL OF PHYSICAL CHEMISTRY C 2016; 120:26393-26401. [DOI: 10.1021/acs.jpcc.6b09406] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/01/2023]
Affiliation(s)
- Ali Haider
- Institute
of Materials Science and Nanotechnology, Bilkent University, Ankara 06800, Turkey
- UNAM
- National Nanotechnology Research Center, Bilkent University, Ankara 06800, Turkey
| | - Petro Deminskyi
- UNAM
- National Nanotechnology Research Center, Bilkent University, Ankara 06800, Turkey
| | - Talha M. Khan
- Institute
of Materials Science and Nanotechnology, Bilkent University, Ankara 06800, Turkey
- UNAM
- National Nanotechnology Research Center, Bilkent University, Ankara 06800, Turkey
| | - Hamit Eren
- Institute
of Materials Science and Nanotechnology, Bilkent University, Ankara 06800, Turkey
- UNAM
- National Nanotechnology Research Center, Bilkent University, Ankara 06800, Turkey
| | - Necmi Biyikli
- Electrical
and Computer Engineering Department, Utah State University, Logan, Utah 84322, United States
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33
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Guo L, Lee I, Zaera F. Patterning of Solid Films via Selective Atomic Layer Deposition Based on Silylation and UV/Ozonolysis. ACS APPLIED MATERIALS & INTERFACES 2016; 8:19836-19841. [PMID: 27455137 DOI: 10.1021/acsami.6b07192] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
A simple methodology was successfully demonstrated for the nanoscale patterning of silicon wafers. Thin films are grown by atomic layer deposition (ALD) and patterned by using selective surface chemistry: First, all the nucleation sites on the original oxide surface are silylated in order to render them unreactive; then, a pattern is developed by selective removal of the silylation agent using a mask and a combination of ultraviolet radiation and ozonolysis. Subsequent ALD is carried out selectively on the areas where the silylation moieties have been removed. This simple procedure affords patterning of oxide surfaces with monolayer control and a lateral resolution on the order of a few tens of nanometers or better. Other selective ALD processes have shown only limited discrimination during deposition, but our method shows absolute inhibition of film growth on the silylated areas while films as thick as 10 nm are grown on the re-exposed sectors. Our example involved the deposition of hafnium oxide films on the native silicon oxide film that forms on Si(100) wafers, but we believe that the approach is general and easily extendable to other ALD processes.
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Affiliation(s)
- Lei Guo
- Department of Chemistry, University of California , Riverside, California 92521, United States
| | - Ilkeun Lee
- Department of Chemistry, University of California , Riverside, California 92521, United States
| | - Francisco Zaera
- Department of Chemistry, University of California , Riverside, California 92521, United States
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34
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Kim WH, Minaye Hashemi FS, Mackus AJM, Singh J, Kim Y, Bobb-Semple D, Fan Y, Kaufman-Osborn T, Godet L, Bent SF. A Process for Topographically Selective Deposition on 3D Nanostructures by Ion Implantation. ACS NANO 2016; 10:4451-8. [PMID: 26950397 DOI: 10.1021/acsnano.6b00094] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Area-selective atomic layer deposition (AS-ALD) is attracting increasing interest because of its ability to enable both continued dimensional scaling and accurate pattern placement for next-generation nanoelectronics. Here we report a strategy for depositing material onto three-dimensional (3D) nanostructures with topographic selectivity using an ALD process with the aid of an ultrathin hydrophobic surface layer. Using ion implantation of fluorocarbons (CFx), a hydrophobic interfacial layer is formed, which in turn causes significant retardation of nucleation during ALD. We demonstrate the process for Pt ALD on both blanket and 2D patterned substrates. We extend the process to 3D structures, demonstrating that this method can achieve selective anisotropic deposition, selectively inhibiting Pt deposition on deactivated horizontal regions while ensuring that only vertical surfaces are decorated during ALD. The efficacy of the approach for metal oxide ALD also shows promise, though further optimization of the implantation conditions is required. The present work advances practical applications that require area-selective coating of surfaces in a variety of 3D nanostructures according to their topographical orientation.
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Affiliation(s)
| | | | | | | | | | | | - Yin Fan
- Applied Materials , 974 East Arques Avenue, M/S 81280, Sunnyvale, California 94085, United States
| | - Tobin Kaufman-Osborn
- Applied Materials , 974 East Arques Avenue, M/S 81280, Sunnyvale, California 94085, United States
| | - Ludovic Godet
- Applied Materials , 974 East Arques Avenue, M/S 81280, Sunnyvale, California 94085, United States
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35
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Guo L, Qin X, Zaera F. Chemical Treatment of Low-k Dielectric Surfaces for Patterning of Thin Solid Films in Microelectronic Applications. ACS APPLIED MATERIALS & INTERFACES 2016; 8:6293-6300. [PMID: 26956428 DOI: 10.1021/acsami.6b00495] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
A protocol has been developed to selectively process low-k SiCOH dielectric substrates in order to activate or deactivate them toward the deposition of thin solid films by chemical (CVD or ALD) means. The original SiCOH surfaces are hydrophobic, an indication that they are alkyl- rather than silanol-terminated and that, consequently, they are fairly unreactive. However, the chemical-mechanical polishing (CMP) sometimes done during microelectronics fabrication renders them hydrophilic and reactive. It was shown here that silylation of the CMP-treated surfaces with any of a number of well-known silylation agents such as HMDS, ODTS, or OTS caps the reactive silanol surface groups and turns them back to being hydrophilic and unreactive. Further exposure of any of the passivated surfaces to a combination of ozone and UV radiation reinstates their hydrophilicity and chemical activity. Importantly, it was also demonstrated that all these changes could be induced without altering the original mechanical, optical, or electrical properties of the samples: atomic force microscopy (AFM) images show no increase in roughness, ellipsometry measurements yield the same values for the index of refraction and dielectric constant, and infrared absorption spectroscopy attests to the preservation of the organic fragments present in the original SiCOH samples. The chemical selectivity of the resulting surfaces was tested for the atomic layer deposition (ALD) of HfO2 films, which could be grown only on the UV/O3 treated substrates.
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Affiliation(s)
- Lei Guo
- Department of Chemistry, University of California , Riverside, California 92521, United States
| | - Xiangdong Qin
- Department of Chemistry, University of California , Riverside, California 92521, United States
| | - Francisco Zaera
- Department of Chemistry, University of California , Riverside, California 92521, United States
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36
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Haider A, Yilmaz M, Deminskyi P, Eren H, Biyikli N. Nanoscale selective area atomic layer deposition of TiO2 using e-beam patterned polymers. RSC Adv 2016. [DOI: 10.1039/c6ra23923d] [Citation(s) in RCA: 25] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/03/2023] Open
Abstract
Self aligned nano patterning of TiO2 using area selective atomic area deposition.
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Affiliation(s)
- Ali Haider
- Institute of Materials Science and Nanotechnology
- Bilkent University
- Ankara 06800
- Turkey
- UNAM – National Nanotechnology Research Center
| | - Mehmet Yilmaz
- UNAM – National Nanotechnology Research Center
- Bilkent University
- Ankara 06800
- Turkey
| | - Petro Deminskyi
- UNAM – National Nanotechnology Research Center
- Bilkent University
- Ankara 06800
- Turkey
| | - Hamit Eren
- Institute of Materials Science and Nanotechnology
- Bilkent University
- Ankara 06800
- Turkey
- UNAM – National Nanotechnology Research Center
| | - Necmi Biyikli
- Electrical and Computer Engineering Department
- Utah State University
- Logan
- USA
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37
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Fang M, Ho JC. Area-Selective Atomic Layer Deposition: Conformal Coating, Subnanometer Thickness Control, and Smart Positioning. ACS NANO 2015; 9:8651-4. [PMID: 26351731 DOI: 10.1021/acsnano.5b05249] [Citation(s) in RCA: 21] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
Transistors have already been made three-dimensional (3D), with device channels (i.e., fins in trigate field-effect transistor (FinFET) technology) that are taller, thinner, and closer together in order to enhance device performance and lower active power consumption. As device scaling continues, these transistors will require more advanced, fabrication-enabling technologies for the conformal deposition of high-κ dielectric layers on their 3D channels with accurate position alignment and thickness control down to the subnanometer scale. Among many competing techniques, area-selective atomic layer deposition (AS-ALD) is a promising method that is well suited to the requirements without the use of complicated, complementary metal-oxide semiconductor (CMOS)-incompatible processes. However, further progress is limited by poor area selectivity for thicker films formed via a higher number of ALD cycles as well as the prolonged processing time. In this issue of ACS Nano, Professor Stacy Bent and her research group demonstrate a straightforward self-correcting ALD approach, combining selective deposition with a postprocess mild chemical etching, which enables selective deposition of dielectric films with thicknesses and processing times at least 10 times larger and 48 times shorter, respectively, than those obtained by conventional AS-ALD processes. These advances present an important technological breakthrough that may drive the AS-ALD technique a step closer toward industrial applications in electronics, catalysis, and photonics, etc. where more efficient device fabrication processes are needed.
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Affiliation(s)
- Ming Fang
- Department of Physics and Materials Science, City University of Hong Kong , 83 Tat Chee Avenue, Kowloon, Hong Kong
- Shenzhen Research Institute, City University of Hong Kong , Shenzhen, 518057, P. R. China
| | - Johnny C Ho
- Department of Physics and Materials Science, City University of Hong Kong , 83 Tat Chee Avenue, Kowloon, Hong Kong
- State Key Laboratory of Millimeter Waves, City University of Hong Kong , 83 Tat Chee Avenue, Kowloon, Hong Kong
- Shenzhen Research Institute, City University of Hong Kong , Shenzhen, 518057, P. R. China
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