Area-Selective Atomic Layer Deposition: Conformal Coating, Subnanometer Thickness Control, and Smart Positioning

Sustained Area-Selectivity in Atomic Layer Deposition of Ir Films: Utilization of Dual Effects of O3 in Deposition and Etching

Area-selective deposition (ASD) based on self-aligned technology has emerged as a promising solution for resolving misalignment issues during ultrafine patterning processes. Despite its potential, the problems of area-selectivity losing beyond a certain thickness remain critical in ASD applications. This study reports a novel approach to sustain the area-selectivity of Ir films as the thickness increases. Ir films are deposited on Al2O3 as the growth area and SiO2 as the non-growth area using atomic-layer-deposition with tricarbonyl-(1,2,3-η)-1,2,3-tri(tert-butyl)-cyclopropenyl-iridium and O3. O3 exhibits a dual effect, facilitating both deposition and etching. In the steady-state growth regime, O3 solely contributes to deposition, whereas in the initial growth stages, longer exposure to O3 etches the initially formed isolated Ir nuclei through the formation of volatile IrO3. Importantly, longer O3 exposure is required for the initial etching on the growth area(Al2O3) compared to the non-growth area(SiO2). By controlling the O3 injection time, the area selectivity is sustained even above a thickness of 25 nm by suppressing nucleation on the non-growth area. These findings shed light on the fundamental mechanisms of ASD using O3 and offer a promising avenue for advancing thin-film technologies. Furthermore, this approach holds promise for extending ASD to other metals susceptible to forming volatile species.

Enhanced Deposition Selectivity of High-k Dielectrics by Vapor Dosing and Selective Removal of Phosphonic Acid Inhibitors

Area-selective atomic layer deposition (AS-ALD), which provides a bottom-up nanofabrication method with atomic-scale precision, has attracted a great deal of attention as a means to alleviate the problems associated with conventional top-down patterning. In this study, we report a methodology for achieving selective deposition of high-k dielectrics by surface modification through vapor-phase functionalization of octadecylphosphonic acid (ODPA) inhibitor molecules accompanied by post-surface treatment. A comparative evaluation of deposition selectivity of ZrO2 thin films deposited with the O2 and O3 reactants was performed on SiO2, TiN, and W substrates, and we confirmed that high enough deposition selectivity over 10 nm can be achieved even after 200 cycles of ALD with the O2 reactant. Subsequently, the electrical properties of ZrO2 films deposited with O2 and O3 reactants were investigated with and without post-deposition treatment. We successfully demonstrated that high-quality ZrO2 thin films with high dielectric constants and stable antiferroelectric properties can be produced by subjecting the films to ozone, which can eliminate carbon impurities within the films. We believe that this work provides a new strategy to achieve highly selective deposition for AS-ALD of dielectric on dielectric (DoD) applications toward upcoming bottom-up nanofabrication.

The surface chemistry of the atomic layer deposition of metal thin films

In this perspective we discuss the progress made in the mechanistic studies of the surface chemistry associated with the atomic layer deposition (ALD) of metal films and the usefulness of that knowledge for the optimization of existing film growth processes and for the design of new ones. Our focus is on the deposition of late transition metals. We start by introducing some of the main surface-sensitive techniques and approaches used in this research. We comment on the general nature of the metallorganic complexes used as precursors for these depositions, and the uniqueness that solid surfaces and the absence of liquid solvents bring to the ALD chemistry and differentiate it from what is known from metalorganic chemistry in solution. We then delve into the adsorption and thermal chemistry of those precursors, highlighting the complex and stepwise nature of the decomposition of the organic ligands that usually ensued upon their thermal activation. We discuss the criteria relevant for the selection of co-reactants to be used on the second half of the ALD cycle, with emphasis on the redox chemistry often associated with the growth of metallic films starting from complexes with metal cations. Additional considerations include the nature of the substrate and the final structural and chemical properties of the growing films, which we indicate rarely retain the homogeneous 2D structure often aimed for. We end with some general conclusions and personal thoughts about the future of this field.

Atomic/molecular layer deposition strategies for enhanced CO2 capture, utilisation and storage materials

Elevated levels of carbon dioxide (CO2) in the atmosphere and the diminishing reserves of fossil fuels have raised profound concerns regarding the resulting consequences of global climate change and the future supply of energy. Hence, the reduction and transformation of CO2 not only mitigates environmental pollution but also generates value-added chemicals, providing a dual remedy to address both energy and environmental challenges. Despite notable advancements, the low conversion efficiency of CO2 remains a major obstacle, largely attributed to its inert chemical nature. It is imperative to engineer catalysts/materials that exhibit high conversion efficiency, selectivity, and stability for CO2 transformation. With unparalleled precision at the atomic level, atomic layer deposition (ALD) and molecular layer deposition (MLD) methods utilize various strategies, including ultrathin modification, overcoating, interlayer coating, area-selective deposition, template-assisted deposition, and sacrificial-layer-assisted deposition, to synthesize numerous novel metal-based materials with diverse structures. These materials, functioning as active materials, passive materials or modifiers, have contributed to the enhancement of catalytic activity, selectivity, and stability, effectively addressing the challenges linked to CO2 transformation. Herein, this review focuses on ALD and MLD's role in fabricating materials for electro-, photo-, photoelectro-, and thermal catalytic CO2 reduction, CO2 capture and separation, and electrochemical CO2 sensing. Significant emphasis is dedicated to the ALD and MLD designed materials, their crucial role in enhancing performance, and exploring the relationship between their structures and catalytic activities for CO2 transformation. Finally, this comprehensive review presents the summary, challenges and prospects for ALD and MLD-designed materials for CO2 transformation.

Vapor-Phase Halogenation of Hydrogen-Terminated Silicon(100) Using N-Halogen-succinimides

The focus of this study was to demonstrate the vapor-phase halogenation of Si(100) and subsequently evaluate the inhibiting ability of the halogenated surfaces toward atomic layer deposition (ALD) of aluminum oxide (Al2O3). Hydrogen-terminated silicon ⟨100⟩ (H-Si(100)) was halogenated using N-chlorosuccinimide (NCS), N-bromosuccinimide (NBS), and N-iodosuccinimide (NIS) in a vacuum-based chemical process. The composition and physical properties of the prepared monolayers were analyzed by using X-ray photoelectron spectroscopy (XPS) and contact angle (CA) goniometry. These measurements confirmed that all three reagents were more effective in halogenating H-Si(100) over OH-Si(100) in the vapor phase. The stability of the modified surfaces in air was also tested, with the chlorinated surface showing the greatest resistance to monolayer degradation and silicon oxide (SiO2) generation within the first 24 h of exposure to air. XPS and atomic force microscopy (AFM) measurements showed that the succinimide-derived Hal-Si(100) surfaces exhibited blocking ability superior to that of H-Si(100), a commonly used ALD resist. This halogenation method provides a dry chemistry alternative for creating halogen-based ALD resists on Si(100) in near-ambient environments.

Stearic Acid as an Atomic Layer Deposition Inhibitor: Spectroscopic Insights from AFM-IR

Modern-day chip manufacturing requires precision in placing chip materials on complex and patterned structures. Area-selective atomic layer deposition (AS-ALD) is a self-aligned manufacturing technique with high precision and control, which offers cost effectiveness compared to the traditional patterning techniques. Self-assembled monolayers (SAMs) have been explored as an avenue for realizing AS-ALD, wherein surface-active sites are modified in a specific pattern via SAMs that are inert to metal deposition, enabling ALD nucleation on the substrate selectively. However, key limitations have limited the potential of AS-ALD as a patterning method. The choice of molecules for ALD blocking SAMs is sparse; furthermore, deficiency in the proper understanding of the SAM chemistry and its changes upon metal layer deposition further adds to the challenges. In this work, we have addressed the above challenges by using nanoscale infrared spectroscopy to investigate the potential of stearic acid (SA) as an ALD inhibiting SAM. We show that SA monolayers on Co and Cu substrates can inhibit ZnO ALD growth on par with other commonly used SAMs, which demonstrates its viability towards AS-ALD. We complement these measurements with AFM-IR, which is a surface-sensitive spatially resolved technique, to obtain spectral insights into the ALD-treated SAMs. The significant insight obtained from AFM-IR is that SA SAMs do not desorb or degrade with ALD, but rather undergo a change in substrate coordination modes, which can affect ALD growth on substrates.

Area-Selective Atomic Layer Deposition for Resistive Random-Access Memory Devices

Resistive random-access memory (RRAM) is a promising technology for data storage and neuromorphic computing; however, cycle-to-cycle and device-to-device variability limits its widespread adoption and high-volume manufacturability. Improving the structural accuracy of RRAM devices during fabrication can reduce these variabilities by minimizing the filamentary randomness within a device. Here, we studied area-selective atomic layer deposition (AS-ALD) of the HfO2 dielectric for the fabrication of RRAM devices with higher reliability and accuracy. Without requiring photolithography, first we demonstrated ALD of HfO2 patterns uniformly and selectively on Pt bottom electrodes for RRAM but not on the underlying SiO2/Si substrate. RRAM devices fabricated using AS-ALD showed significantly narrower operating voltage range (2.6 × improvement) and resistance states than control devices without AS-ALD, improving the overall reliability of RRAM. Irrespective of device size (1 × 1, 2 × 2, and 5 × 5 μm2), we observed similar improvement, which is an inherent outcome of the AS-ALD technique. Our demonstration of AS-ALD for improved RRAM devices could further encourage the adoption of such techniques for other data storage technologies, including phase-change, magnetic, and ferroelectric RAM.

Molecular Mechanism of Selective Al2O3 Atomic Layer Deposition on Self-Assembled Monolayers

Area-selective atomic layer deposition (AS-ALD) of insulating metallic oxide layers could be a useful nanopatterning technique for making increasingly complex semiconductor circuits. Although the alkanethiol self-assembled monolayer (SAM) has been considered promising as an ALD inhibitor, the low inhibition efficiency of the SAM during ALD processes makes its wide application difficult. We investigated the deposition mechanism of Al2O3 on alkanethiol-SAMs using temperature-dependent vibrational sum-frequency-generation spectroscopy. We found that the thermally induced formation of gauche defects in the SAMs is the main causative factor deteriorating the inhibition efficiency. Here, we demonstrate that a discontinuously temperature-controlled ALD technique involving self-healing and dissipation of thermally induced stress on the structure of SAM substantially enhances the SAM's inhibition efficiency and enables us to achieve 60 ALD cycles (6.6 nm). We anticipate that the present experimental results on the ALD mechanism on the SAM surface and the proposed ALD method will provide clues to improve the efficiency of AS-ALD, a promising nanoscale patterning and manufacturing technique.

Can We Rationally Design and Operate Spatial Atomic Layer Deposition Systems for Steering the Growth Regime of Thin Films?

Fine control over the growth of materials is required to precisely tailor their properties. Spatial atomic layer deposition (SALD) is a thin-film deposition technique that has recently attracted attention because it allows producing thin films with a precise number of deposited layers, while being vacuum-free and much faster than conventional atomic layer deposition. SALD can be used to grow films in the atomic layer deposition or chemical vapor deposition regimes, depending on the extent of precursor intermixing. Precursor intermixing is strongly influenced by the SALD head design and operating conditions, both of which affect film growth in complex ways, making it difficult to predict the growth regime prior to depositions. Here, we used numerical simulation to systematically study how to rationally design and operate SALD systems for growing thin films in different growth regimes. We developed design maps and a predictive equation allowing us to predict the growth regime as a function of the design parameters and operation conditions. The predicted growth regimes match those observed in depositions performed for various conditions. The developed design maps and predictive equation empower researchers in designing, operating, and optimizing SALD systems, while offering a convenient way to screen deposition parameters, prior to experimentation.

High-Throughput Area-Selective Spatial Atomic Layer Deposition of SiO2 with Interleaved Small Molecule Inhibitors and Integrated Back-Etch Correction for Low Defectivity

A first-of-its-kind area-selective deposition process for SiO₂  is developed consisting of film deposition with interleaved exposures to small molecule inhibitors (SMIs) and back-etch correction steps, within the same spatial atomic layer deposition (ALD) tool. The synergy of these aspects results in selective SiO₂  deposition up to ~23 nm with high selectivity and throughput, with SiO₂  growth area and ZnO nongrowth area. The selectivity is corroborated by both X-ray photoelectron spectroscopy (XPS) and low-energy ion scattering spectroscopy (LEIS). The selectivity conferred by two different SMIs, ethylbutyric acid, and pivalic acid has been compared experimentally and theoretically. Density Functional Theory (DFT) calculations reveal that selective surface functionalization using both SMIs is predominantly controlled thermodynamically, while the better selectivity achieved when using trimethylacetic acid can be explained by its higher packing density compared to ethylbutyric acid. By employing the trimethylacetic acid as SMI on other starting surfaces (Ta₂ O₅ , ZrO₂ , etc.) and probing the selectivity, a broader use of carboxylic acid inhibitors for different substrates is demonstrated. It is believed that the current results highlight the subtleties in SMI properties such as size, geometry, and packing, as well as interleaved back-etch steps, which are key in developing ever more effective strategies for highly selective deposition processes.

Metal Sites in Zeolites: Synthesis, Characterization, and Catalysis

Zeolites with ordered microporous systems, distinct framework topologies, good spatial nanoconfinement effects, and superior (hydro)thermal stability are an ideal scaffold for planting diverse active metal species, including single sites, clusters, and nanoparticles in the framework and framework-associated sites and extra-framework positions, thus affording the metal-in-zeolite catalysts outstanding activity, unique shape selectivity, and enhanced stability and recyclability in the processes of Brønsted acid-, Lewis acid-, and extra-framework metal-catalyzed reactions. Especially, thanks to the advances in zeolite synthesis and characterization techniques in recent years, zeolite-confined extra-framework metal catalysts (denoted as metal@zeolite composites) have experienced rapid development in heterogeneous catalysis, owing to the combination of the merits of both active metal sites and zeolite intrinsic properties. In this review, we will present the recent developments of synthesis strategies for incorporating and tailoring of active metal sites in zeolites and advanced characterization techniques for identification of the location, distribution, and coordination environment of metal species in zeolites. Furthermore, the catalytic applications of metal-in-zeolite catalysts are demonstrated, with an emphasis on the metal@zeolite composites in hydrogenation, dehydrogenation, and oxidation reactions. Finally, we point out the current challenges and future perspectives on precise synthesis, atomic level identification, and practical application of the metal-in-zeolite catalyst system.

Relation between Reactive Surface Sites and Precursor Choice for Area-Selective Atomic Layer Deposition Using Small Molecule Inhibitors

Implementation of vapor/phase dosing of small molecule inhibitors (SMIs) in advanced atomic layer deposition (ALD) cycles is currently being considered for bottom-up fabrication by area-selective ALD. When SMIs are used, it can be challenging to completely block precursor adsorption due to the inhibitor size and the relatively short vapor/phase exposures. Two strategies for precursor blocking are explored: (i) physically covering precursor adsorption sites, i.e., steric shielding, and (ii) eliminating precursor adsorption sites from the surface, i.e., chemical passivation. In this work, it is determined whether steric shielding is enough for effective precursor blocking during area-selective ALD or whether chemical passivation is required as well. At the same time, we address why some ALD precursors are more difficult to block than others. To this end, the blocking of the Al precursor molecules trimethylaluminum (TMA), dimethylaluminum isopropoxide (DMAI), and tris(dimethylamino)aluminum (TDMAA) was studied by using acetylacetone (Hacac) as inhibitor. It was found that DMAI and TDMAA are more easily blocked than TMA because they adsorb on the same surface sites as Hacac, while TMA is also reactive with other surface sites. This work shows that chemical passivation plays a crucial role for precursor blocking in concert with steric shielding. Moreover, the reactivity of the precursor with the surface groups on the non-growth area dictates the effectiveness of blocking precursor adsorption.

Area selective deposition using alternate deposition and etch super-cycle strategies

Area selective deposition (ASD) is a bottom-up process leading to a uniform deposition in only desired areas of a patterned substrate, avoiding the use of photolithography for patterning. However, whatever the strategy used to develop selective deposition by atomic layer deposition, there always comes a time when selectivity becomes defective and growth in undesired substrate areas must be corrected. This leads to the design of ASD by super-cycle alternating deposition and etch. Recent examples from the literature show a great diversity in the design of the etching step and indicate that the optimization of selective deposition by super-cycles is only possible through a careful optimization of the etching step parameters (chemistry, frequency, duration, etc.). In this paper, we discuss how to optimize this step and we show that different approaches can be developed to optimize the overall ASD process throughput, while simultaneously limiting process drift and contamination. We also show that complementary selective properties can prove a valuable leverage enabling ASD processes based on super-cycles, such as structure selective deposition, whereby a difference in thin film morphology in growth and non-growth areas can be smartly taken advantage of during the etching step.

Controlled exposure of CuO thin films through corrosion-protecting, ALD-deposited TiO2 overlayers

Ultra-thin film coatings are used to protect semiconductor photoelectrodes from the harsh chemical environments common to photoelectrochemical energy conversion. These layers add contact transfer resistance to the interface that can result in a reduction of photoelectrochemical energy conversion efficiency of the photoelectrode. Here, we describe the concept of a partial protection layer, which allows for direct chemical access to a small fraction of the semiconductor underlayer for further functionalization by an electrocatalyst. The rest of the interface remains protected by a stable, inert protection layer. CuO is used as a model system for this scheme. Atomic layer deposition (ALD)-prepared TiO2 layers on CuO thin films prepared from electrodeposited Cu2O allow for the control of interfacial morphology to intentionally expose the CuO underlayer. The ALD-TiO2 overlayer shrinks during crystallization, while Cu2O in the underlayer expands during oxidation. As a result, the TiO2 protection layer cracks to expose the oxidized underlying CuO layer, which can be controlled by preceding thermal oxidation. This work demonstrates a potentially promising strategy for the parallel optimization of photoelectrochemical interfaces for chemical stability and high performance.

A first-principles study of the atomic layer deposition of ZnO on carboxyl functionalized carbon nanotubes: the role of water molecules

The formation of heterostructures that combine a large surface area with high surface activity has attracted the attention of the scientific community due to the unique properties and applications of these heterostructures. In this work, we describe - at the atomic level - the full reaction mechanisms involved in the atomic layer deposition of a hybrid ZnO/CNT inorganic structure. First, the pristine CNTs are chemically activated with a carboxylic acid, a process unique to carbon materials. Diethylzinc (DEZ) and water are used as gas-phase precursors to form ZnO. Our findings show that DEZ is physically adsorbed on the CNTs during the exposure of the first precursor. The ligand-exchange to generate chemisorbed ethyl zinc on the O side of the COOH group needs to overcome an energy barrier of 0.06 eV. This is a very small energy if compared to the values (0.5-0.6 eV) obtained in previous studies for OH functionalized surfaces. The height of the barrier is associated with the C[double bond, length as m-dash]O side, which mediates the H proton's exchange from the OH group to the C₂H₅ ligand. Furthermore, upon exposure to the oxidizing agent (H₂O), ethyl zinc exchanges its last ligand as ethane, and it accepts a hydroxyl group through a self-limiting reaction with an energy barrier of 0.88 eV. Notice that the energy barrier of the second ligand-exchange is larger than of the first. We have also analyzed the effect in the saturation of the second precursor: as the quantity of water molecules increases, the long-range interactions tend to repel them. However, the energy barrier of the second ligand-exchange decreases from 1.53 eV to 0.88 eV for one and two water molecules, showing a clear dependence on the oxidizing agent. Non-covalent interactions are used as a tool to visualize the driving forces that take place during each partial reaction in real space. Our study points out the importance of using the right functionalization agent to achieve a controlled and conformal ALD growth at the initial steps of the formation of hybrid ZnO/CNT structures, as well as the role played by the oxidizing agent to lower the energy barrier on the second ALD step.

Area-Selective Atomic Layer Deposition Patterned by Electrohydrodynamic Jet Printing for Additive Manufacturing of Functional Materials and Devices

There is an increasing interest in additive nanomanufacturing processes, which enable customizable patterning of functional materials and devices on a wide range of substrates. However, there are relatively few techniques with the ability to directly 3D print patterns of functional materials with sub-micron resolution. In this study, we demonstrate the use of additive electrohydrodynamic jet (e-jet) printing with an average line width of 312 nm, which acts as an inhibitor for area-selective atomic layer deposition (AS-ALD) of a range of metal oxides. We also demonstrate subtractive e-jet printing with solvent inks that dissolve polymer inhibitor layers in specific regions, which enables localized AS-ALD within those regions. The chemical selectivity and morphology of e-jet patterned polymers towards binary and ternary oxides of ZnO, Al₂O₃, and SnO₂ were quantified using X-ray photoelectron spectroscopy, atomic force microscopy, and Auger electron spectroscopy. This approach enables patterning of functional oxide semiconductors, insulators, and transparent conducting oxides with tunable composition, Å-scale control of thickness, and sub-μm resolution in the x-y plane. Using a combination of additive and subtractive e-jet printing with AS-ALD, a thin-film transistor was fabricated using zinc-tin-oxide for the semiconductor channel and aluminum-doped zinc oxide as the source and drain electrical contacts. In the future, this technique can be used to print integrated electronics with sub-micron resolution on a variety of substrates.

Area-Selective Atomic Layer Deposition of TiN Using Trimethoxy(octadecyl)silane as a Passivation Layer

Area-selective deposition (ASD) offers tremendous advantages when compared with conventional patterning processes, such as the possibility of achieving three-dimensional features in a bottom-up additive fashion. Recently, ASD is gaining more and more attention from IC manufacturers and equipment and material suppliers. Through combination of self-assembled monolayer (SAM) surface passivation of the nongrowth substrate area and atomic layer deposition (ALD) on the growth area, ASD selective to the growth area can be achieved. With the purpose of screening SAM precursors to provide optimal passivation performance on SiO₂, various siloxane precursors with different terminal groups and alkyl chains were investigated. Additionally, the surface dependence and growth inhibition of TiN ALD on -NH₂, -CF₃, and -CH₃ terminations is investigated. We demonstrated the methyl termination of the SAM precursor combined with a C18 alkyl chain plays an important role in broadening the ALD selectivity window by suppressing precursor adsorption. Owing to the high surface coverage, excellent thermal stability and longer carbon chain length, an optimized trimethoxy(octadecyl)silane (TMODS) film deposited from liquid phase was able to provide a selectivity higher than 0.99 up to 20 nm ALD film deposited on hydroxyl-terminated Si oxide. The approach followed in this work can allow extending the ASD process window, and it is relevant for a wide variety of applications.

Surface Modification of Catalysts via Atomic Layer Deposition for Pollutants Elimination

In recent years, atomic layer deposition (ALD) is widely used for surface modification of materials to improve the catalytic performance for removing pollutants, e.g., CO, hydrocarbons, heavy metal ions, and organic pollutants, and much progress has been achieved. In this review, we summarize the recent development of ALD applications in environmental remediation from the perspective of surface modification approaches, including conformal coating, uniform particle deposition, and area-selective deposition. Through the ALD conformal coating, the activity of photocatalysts improved. Uniform particle deposition is used to prepare nanostructured catalysts via ALD for removal of air pollutions and dyes. Area-selective deposition is adopted to cover the specific defects on the surface of materials and synthesize bimetallic catalysts to remove CO and other contaminations. In addition, the design strategy of catalysts and shortcomings of current studies are discussed in each section. At last, this review points out some potential research trends and comes up with a few routes to further improve the performance of catalysts via ALD surface modification and deeper investigate the ALD reaction mechanisms.

Molecular-Scale Investigation of the Thermal and Chemical Stability of Monolayer PTCDA on Cu(111) and Cu(110)

Perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) has been intensively investigated for decades because of its unique electronic and optical properties and its applications in organic electronics and surface engineering and passivation of 2D materials. Recently, the high demand for achieving selective area deposition in device fabrications drives the research of utilizing organic molecules as a passivation layer on metals in the semiconductor industry. PTCDA molecules show promising potential to be used as a passivation layer on a metal surface because of their ability to form self-assembled compact lying-down layers with the well-exposed inert conjugated molecular π-plane. However, the thermal and chemical stabilities of monolayer PTCDA on metal surfaces have not been thoroughly studied. In this paper, we demonstrate that monolayer PTCDA on Cu(110) and Cu(111) surfaces exhibit good thermal and chemical stabilities, as revealed through the combination of in situ X-ray photoelectron spectroscopy and in situ low-temperature scanning tunneling microscopy measurements. We show that monolayer PTCDA on copper is stable up to 220 °C and decomposes to perylene at higher temperature. Monolayer PTCDA also shows good chemical stability when exposed to O₂ and water, demonstrating good potential for its future applications as passivation layers in selective area deposition.

Surface functionalization on nanoparticles via atomic layer deposition

As an ultrathin film preparation method, atomic layer deposition (ALD) has recently found versatile applications in fields beyond semiconductors, such as energy, environment, catalysis and so on. The design, preparation and characterization of thin film applied in the emerging fields have attracted great interests. The development of ALD technique on particles opens up a broad horizon in the advanced nanofabrication. Pioneering applications are exploring conformal coating, porous coating and selective surface modification of nanoparticles. Conformal encapsulation of particles is a major application to protect materials with ultrathin films from being eroded by the external environment while keeping the original properties of the primary particles. Porous coating has been developed to simultaneously expose the particles' surface and provide nanopores, which is another important method that demonstrates its advantages in modification of electrode materials, catalysis and energy applications, etc. Selective ALD takes the method forward in order to precisely control the directionality of decoration sites on the particles and selectively passivate undesired facets, sites, or defects. Such methods provide practical strategies for atomic scale and precise surface functionalization on particles and greatly expand its potential applications.

Competitive Adsorption as a Route to Area-Selective Deposition

In this work, we have explored the use of a third species during chemical vapor deposition (CVD) to direct thin-film growth to occur exclusively on one surface in the presence of another. Using a combination of density functional theory (DFT) calculations and experiments, including in situ surface analysis, we have examined the use of 4-octyne as a coadsorbate in the CVD of ZrO₂ thin films on SiO₂ and Cu surfaces. At sufficiently high partial pressures of the coadsorbate and sufficiently low substrate temperatures, we find that 4-octyne can effectively compete for adsorption sites, blocking chemisorption of the thin-film precursor, Zr[N(CH₃C₂H₅)]₄, and preventing growth on Cu, while leaving growth unimpeded on SiO₂. The selective dielectric-on-dielectric (DoD) process developed herein is fast, totally vapor phase, and does not negatively alter the composition or morphology of the deposited thin film. We argue that this approach to area-selective deposition (ASD) should be widely applicable, provided that suitable candidates for preferential binding can be identified.

From the Bottom-Up: Toward Area-Selective Atomic Layer Deposition with High Selectivity

Bottom-up nanofabrication by area-selective atomic layer deposition (ALD) is currently gaining momentum in semiconductor processing, because of the increasing need for eliminating the edge placement errors of top-down processing. Moreover, area-selective ALD offers new opportunities in many other areas such as the synthesis of catalysts with atomic-level control. This Perspective provides an overview of the current developments in the field of area-selective ALD, discusses the challenge of achieving a high selectivity, and provides a vision for how area-selective ALD processes can be improved. A general cause for the loss of selectivity during deposition is that the character of surfaces on which no deposition should take place changes when it is exposed to the ALD chemistry. A solution is to implement correction steps during ALD involving for example surface functionalization or selective etching. This leads to the development of advanced ALD cycles by combining conventional two-step ALD cycles with correction steps in multistep cycle and/or supercycle recipes.

Isotropic Atomic Layer Etching of ZnO Using Acetylacetone and O2 Plasma

Atomic layer etching (ALE) provides Ångström-level control over material removal and holds potential for addressing the challenges in nanomanufacturing faced by conventional etching techniques. Recent research has led to the development of two main classes of ALE: ion-driven plasma processes yielding anisotropic (or directional) etch profiles and thermally driven processes for isotropic material removal. In this work, we extend the possibilities to obtain isotropic etching by introducing a plasma-based ALE process for ZnO which is radical-driven and utilizes acetylacetone (Hacac) and O₂ plasma as reactants. In situ spectroscopic ellipsometry measurements indicate self-limiting half-reactions with etch rates ranging from 0.5 to 1.3 Å/cycle at temperatures between 100 and 250 °C. The ALE process was demonstrated on planar and three-dimensional substrates consisting of a regular array of semiconductor nanowires (NWs) conformally covered using atomic layer deposition of ZnO. Transmission electron microscopy studies conducted on the ZnO-covered NWs before and after ALE proved the isotropic nature and the damage-free characteristics of the process. In situ infrared spectroscopy measurements were used to elucidate the self-limiting nature of the ALE half-reactions and the reaction mechanism. During the Hacac etching reaction that is assumed to produce Zn(acac)₂, carbonaceous species adsorbed on the ZnO surface are suggested as the cause of the self-limiting behavior. The subsequent O₂ plasma step resets the surface for the next ALE cycle. High etch selectivities (∼80:1) over SiO₂ and HfO₂ were demonstrated. Preliminary results indicate that the etching process can be extended to other oxides such as Al₂O₃.

Spontaneous Registration of Sub-10 nm Features Based on Subzero Celsius Spin-Casting of Self-Assembling Building Blocks Directed by Chemically Encoded Surfaces

For low-cost and facile fabrication of innovative nanoscale devices with outstanding functionality and performance, it is critical to develop more practical patterning solutions that are applicable to a wide range of materials and feature sizes while minimizing detrimental effects by processing conditions. In this study, we report that area-selective sub-10 nm pattern formation can be realized by temperature-controlled spin-casting of block copolymers (BCPs) combined with submicron-scale-patterned chemical surfaces. Compared to conventional room-temperature spin-casting, the low temperature ( e.g., -5 °C) casting of the BCP solution on the patterned self-assembled monolayer achieved substantially improved area selectivity and uniformity, which can be explained by optimized solvent evaporation kinetics during the last stage of film formation. Moreover, the application of cold spin-casting can also provide high-yield in situ patterning of light-emitting CdSe/ZnS quantum dot thin films, indicating that this temperature-optimized spin-casting strategy would be highly effective for tailored patterning of diverse organic and hybrid materials in solution phase.

Monitoring the Process of Nanocavity Formation on a Monomolecular Level

Controlling the synthesis of nanostructured surfaces is essential to tailor the properties of functional materials such as catalysts. We report on the synthesis of nanocavities of 1–2 nm dimension on planar Si-wafers by sacrificial nanotemplating and atomic layer deposition (ALD). It is shown that the process of nanocavity formation can be directly monitored on a monomolecular level through imaging with an atomic force microscope (AFM). In particular, by employing the AFM peak force tapping mode the simultaneous mapping of surface topography and tip-surface adhesion forces is accessible, which is useful for the assignment of topographical features and determining the orientation of the template molecules on the wafer surface. Detailed analysis based on the three-dimensional AFM topography allows for a quantification of the template and nanocavity surface coverage. The results are of importance for a detailed understanding of the processes underlying template-based nanocavity formation on oxide surfaces.

Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation

Area-selective atomic layer deposition (ALD) is envisioned to play a key role in next-generation semiconductor processing and can also provide new opportunities in the field of catalysis. In this work, we developed an approach for the area-selective deposition of metal oxides on noble metals. Using O₂ gas as co-reactant, area-selective ALD has been achieved by relying on the catalytic dissociation of the oxygen molecules on the noble metal surface, while no deposition takes place on inert surfaces that do not dissociate oxygen (i.e., SiO₂, Al₂O₃, Au). The process is demonstrated for selective deposition of iron oxide and nickel oxide on platinum and iridium substrates. Characterization by in situ spectroscopic ellipsometry, transmission electron microscopy, scanning Auger electron spectroscopy, and X-ray photoelectron spectroscopy confirms a very high degree of selectivity, with a constant ALD growth rate on the catalytic metal substrates and no deposition on inert substrates, even after 300 ALD cycles. We demonstrate the area-selective ALD approach on planar and patterned substrates and use it to prepare Pt/Fe₂O₃ core/shell nanoparticles. Finally, the approach is proposed to be extendable beyond the materials presented here, specifically to other metal oxide ALD processes for which the precursor requires a strong oxidizing agent for growth.

Reaction Mechanism of Area-Selective Atomic Layer Deposition for Al2O3 Nanopatterns

The reaction mechanism of area-selective atomic layer deposition (AS-ALD) of Al₂O₃ thin films using self-assembled monolayers (SAMs) was systematically investigated by theoretical and experimental studies. Trimethylaluminum (TMA) and H₂O were used as the precursor and oxidant, respectively, with octadecylphosphonic acid (ODPA) as an SAM to block Al₂O₃ film formation. However, Al₂O₃ layers began to form on the ODPA SAMs after several cycles, despite reports that CH₃-terminated SAMs cannot react with TMA. We showed that TMA does not react chemically with the SAM but is physically adsorbed, acting as a nucleation site for Al₂O₃ film growth. Moreover, the amount of physisorbed TMA was affected by the partial pressure. By controlling it, we developed a new AS-ALD Al₂O₃ process with high selectivity, which produces films of ∼60 nm thickness over 370 cycles. The successful deposition of Al₂O₃ thin film patterns using this process is a breakthrough technique in the field of nanotechnology.

Area-Selective Atomic Layer Deposition of SiO2 Using Acetylacetone as a Chemoselective Inhibitor in an ABC-Type Cycle

Area-selective atomic layer deposition (ALD) is rapidly gaining interest because of its potential application in self-aligned fabrication schemes for next-generation nanoelectronics. Here, we introduce an approach for area-selective ALD that relies on the use of chemoselective inhibitor molecules in a three-step (ABC-type) ALD cycle. A process for area-selective ALD of SiO2 was developed comprising acetylacetone inhibitor (step A), bis(diethylamino)silane precursor (step B), and O2 plasma reactant (step C) pulses. Our results show that this process allows for selective deposition of SiO2 on GeO2, SiNx, SiO2, and WO3, in the presence of Al2O3, TiO2, and HfO2 surfaces. In situ Fourier transform infrared spectroscopy experiments and density functional theory calculations underline that the selectivity of the approach stems from the chemoselective adsorption of the inhibitor. The selectivity between different oxide starting surfaces and the compatibility with plasma-assisted or ozone-based ALD are distinct features of this approach. Furthermore, the approach offers the opportunity of tuning the substrate-selectivity by proper selection of inhibitor molecules.

Selective Ru ALD as a Catalyst for Sub-Seven-Nanometer Bottom-Up Metal Interconnects

Integrating bottom-up area-selective building-blocks in microelectronics has a disruptive potential because of the unique capability of engineering new structures and architectures. Atomic layer deposition (ALD) is an enabling technology, yet understanding the surfaces and their modification is crucial to leverage area-selective ALD (AS-ALD) in this field. The understanding of general selectivity mechanisms and the compatibility of plasma surface modifications with existing materials and processes, both at research and production scale, will greatly facilitate AS-ALD integration in microelectronics. The use of self-assembled monolayers to inhibit the nucleation and growth of ALD films is still scarcely compatible with nanofabrication because of defectivity and downscaling limitations. Alternatively, in this Research Article, we demonstrate a straightforward H₂ plasma surface modification process capable of inhibiting Ru ALD nucleation on an amorphous carbon surface while still allowing instantaneous nucleation and linear growth on Si-containing materials. Furthermore, we demonstrate how AS-ALD enables previously inaccessible routes, such as bottom-up electroless metal deposition in a dual damascene etch-damage free low-k replacement scheme. Specifically, our approach offers a general strategy for scalable ultrafine 3D nanostructures without the burden of subtractive metal patterning and high cost chemical mechanical planarization processes.

Patterning of Solid Films via Selective Atomic Layer Deposition Based on Silylation and UV/Ozonolysis

A simple methodology was successfully demonstrated for the nanoscale patterning of silicon wafers. Thin films are grown by atomic layer deposition (ALD) and patterned by using selective surface chemistry: First, all the nucleation sites on the original oxide surface are silylated in order to render them unreactive; then, a pattern is developed by selective removal of the silylation agent using a mask and a combination of ultraviolet radiation and ozonolysis. Subsequent ALD is carried out selectively on the areas where the silylation moieties have been removed. This simple procedure affords patterning of oxide surfaces with monolayer control and a lateral resolution on the order of a few tens of nanometers or better. Other selective ALD processes have shown only limited discrimination during deposition, but our method shows absolute inhibition of film growth on the silylated areas while films as thick as 10 nm are grown on the re-exposed sectors. Our example involved the deposition of hafnium oxide films on the native silicon oxide film that forms on Si(100) wafers, but we believe that the approach is general and easily extendable to other ALD processes.

Chemical Treatment of Low-k Dielectric Surfaces for Patterning of Thin Solid Films in Microelectronic Applications

A protocol has been developed to selectively process low-k SiCOH dielectric substrates in order to activate or deactivate them toward the deposition of thin solid films by chemical (CVD or ALD) means. The original SiCOH surfaces are hydrophobic, an indication that they are alkyl- rather than silanol-terminated and that, consequently, they are fairly unreactive. However, the chemical-mechanical polishing (CMP) sometimes done during microelectronics fabrication renders them hydrophilic and reactive. It was shown here that silylation of the CMP-treated surfaces with any of a number of well-known silylation agents such as HMDS, ODTS, or OTS caps the reactive silanol surface groups and turns them back to being hydrophilic and unreactive. Further exposure of any of the passivated surfaces to a combination of ozone and UV radiation reinstates their hydrophilicity and chemical activity. Importantly, it was also demonstrated that all these changes could be induced without altering the original mechanical, optical, or electrical properties of the samples: atomic force microscopy (AFM) images show no increase in roughness, ellipsometry measurements yield the same values for the index of refraction and dielectric constant, and infrared absorption spectroscopy attests to the preservation of the organic fragments present in the original SiCOH samples. The chemical selectivity of the resulting surfaces was tested for the atomic layer deposition (ALD) of HfO2 films, which could be grown only on the UV/O3 treated substrates.