In Situ Transmission Electron Microscopy Modulation of Transport in Graphene Nanoribbons

The Synthescope: A Vision for Combining Synthesis with Atomic Fabrication

The scanning transmission electron microscope, a workhorse instrument in materials characterization, is being transformed into an atomic-scale material-manipulation platform. With an eye on the trajectory of recent developments and the obstacles toward progress in this field, a vision for a path toward an expanded set of capabilities and applications is provided. The microscope is reconceptualized as an instrument for fabrication and synthesis with the capability to image and characterize atomic-scale structural formation as it occurs. Further development and refinement of this approach may have substantial impact on research in microelectronics, quantum information science, and catalysis, where precise control over atomic-scale structure and chemistry of a few "active sites" can have a dramatic impact on larger-scale functionality and where developing a better understanding of atomic-scale processes can help point the way to larger-scale synthesis approaches.

Contrast Mechanisms in Secondary Electron e-Beam-Induced Current (SEEBIC) Imaging

Over the last few years, a new mode for imaging in the scanning transmission electron microscope (STEM) has gained attention as it permits the direct visualization of sample conductivity and electrical connectivity. When the electron beam (e-beam) is focused on the sample in the STEM, secondary electrons (SEs) are generated. If the sample is conductive and electrically connected to an amplifier, the SE current can be measured as a function of the e-beam position. This scenario is similar to the better-known scanning electron microscopy-based technique, electron beam-induced current imaging, except that the signal in the STEM is generated by the emission of SEs, hence the name secondary electron e-beam-induced current (SEEBIC), and in this case, the current flows in the opposite direction. Here, we provide a brief review of recent work in this area, examine the various contrast generation mechanisms associated with SEEBIC, and illustrate its use for the characterization of graphene nanoribbon devices.

Novel electrical properties and applications in kaleidoscopic graphene nanoribbons

As one of the representatives of nano-graphene materials, graphene nanoribbons (GNRs) have more novel electrical properties, highly adjustable electronic properties, and optoelectronic properties than graphene due to their diverse geometric structures and atomic precision configurations. The electrical properties and band gaps of GNRs depend on their width, length, boundary configuration and other elemental doping, etc. With the improvement of the preparation technology and level of GNRs with atomic precision, increasing number of GNRs with different configurations are being prepared. They all show novel electrical properties and high tunability, which provides a broad prospect for the application of GNRs in the field of microelectronics. Here, we summarize the latest GNR-based achievements in recent years and summarize the latest electrical properties and potential applications of GNRs.

Computer vision AC-STEM automated image analysis for 2D nanopore applications

Transmission electron microscopy (TEM) has led to important discoveries in atomic imaging and as an atom-by-atom fabrication tool. Using electron beams, atomic structures can be patterned, annealed and crystallized, and nanopores can be drilled in thin membranes. We review current progress in TEM analysis and implement a computer vision nanopore-detection algorithm that achieves a 96% pixelwise precision in TEM images of nanopores in 2D membranes (WS₂), and discuss parameter optimization including a variation on the traditional grid search and gradient ascent. Such nanopores have applications in ion detection, water filtration, and DNA sequencing, where ionic conductance through the pore should be concordant with its TEM-measured size. Standard computer vision methods have their advantages as they are intuitive and do not require extensive training data. For completeness, we briefly comment on related machine learning for 2D materials analysis and discuss relevant progress in these fields. Image analysis alongside TEM allows correlated fabrication and analysis done simultaneously in situ to engineer devices at the atomic scale.

In Situ 2D MoS2 Field-Effect Transistors with an Electron Beam Gate

We use the beam of a transmission electron microscope (TEM) to modulate in situ the current-voltage characteristics of a two-terminal monolayer molybdenum disulfide (MoS₂) channel fabricated on a silicon nitride substrate. Suppression of the two-dimensional (2D) MoS₂ channel conductance up to 94% is observed when the beam hits and charges the substrate surface. Gate-tunable transistor characteristics dependent on beam current are observed even when the beam is up to tens of microns away from the channel. In contrast, conductance remains constant when the beam passes through a micron-sized hole in the substrate. There is no MoS₂ structural damage during gating, and the conductance reverts to its original value when the beam is turned off. We observe on/off ratios up to ∼60 that are largely independent of beam size and channel length. This TEM field-effect transistor architecture with electron beam gating provides a platform for future in situ electrical measurements.

Transformation and Evaporation of Surface Adsorbents on a Graphene "Hot Plate"

Dynamic surface modification of suspended graphene at high temperatures was directly observed with in situ scanning transmission electron microscopy (STEM) measurements. The suspended graphene devices were prepared on a SiN membrane substrate with a hole so that STEM observations could be conducted during Joule heating. Current-voltage characteristics of suspended graphene devices inside the STEM chamber were measured while monitoring and controlling the temperature of graphene by estimating the electrical power of the devices. During the in situ STEM observation at high temperatures, residual hydrocarbon adsorbents that had remained on graphene effectively evaporated creating large, atomically clean graphene areas. At other places, dynamic changes in the shape, position, and orientation of adsorbents could be directly observed. The temperature of the suspended graphene sample was estimated to reach up to 2000 K during the experiment, making graphene an efficient high-temperature micrometer-sized electron-transparent hot plate for future experiments in microscopes.

In Situ Study of the Impact of Aberration-Corrected Electron-Beam Lithography on the Electronic Transport of Suspended Graphene Devices

The implementation of aberration-corrected electron beam lithography (AC-EBL) in a 200 keV scanning transmission electron microscope (STEM) is a novel technique that could be used for the fabrication of quantum devices based on 2D atomic crystals with single nanometer critical dimensions, allowing to observe more robust quantum effects. In this work we study electron beam sculpturing of nanostructures on suspended graphene field effect transistors using AC-EBL, focusing on the in situ characterization of the impact of electron beam exposure on device electronic transport quality. When AC-EBL is performed on a graphene channel (local exposure) or on the outside vicinity of a graphene channel (non-local exposure), the charge transport characteristics of graphene can be significantly affected due to charge doping and scattering. While the detrimental effect of non-local exposure can be largely removed by vigorous annealing, local-exposure induced damage is irreversible and cannot be fixed by annealing. We discuss the possible causes of the observed exposure effects. Our results provide guidance to the future development of high-energy electron beam lithography for nanomaterial device fabrication.

Spatially Controlled Fabrication and Mechanisms of Atomically Thin Nanowell Patterns in Bilayer WS2 Using in Situ High Temperature Electron Microscopy

We show controlled production of atomically thin nanowells in bilayer WS₂ using an in situ heating holder combined with a focused electron beam in a scanning transmission electron microscope (STEM). We systematically study the formation and evolvement mechanism involved in removing a single layer of WS₂ within a bilayer region with 2 nm accuracy in location and without punching through to the other layer to create a hole. Best results are found when using a high temperature of 800 °C, because it enables thermally activated atomic migration and eliminates the interference from surface carbon contamination. We demonstrate precise control over spatial distributions with 5 nm accuracy of patterning and the width of nanowells adjustable by dose-dependent parameters. The mechanism of removing a monolayer of WS₂ within a bilayer region is different than removing equivalent sections in a monolayer film due to the van der Waals interaction of the underlying remaining layer in the bilayer system that stabilizes the excess W atom stoichiometry within the edges of the nanowell structure and facilitates expansion. This study offers insights for the nanoengineering of nanowells in two-dimensional (2D) transitional metal dichalcogenides (TMDs), which could hold potential as selective traps to localize 2D reactions in molecules and ions, underpinning the broader utilization of 2D material membranes.

Defect Engineering in 2D Materials: Precise Manipulation and Improved Functionalities

Two-dimensional (2D) materials have attracted increasing interests in the last decade. The ultrathin feature of 2D materials makes them promising building blocks for next-generation electronic and optoelectronic devices. With reducing dimensionality from 3D to 2D, the inevitable defects will play more important roles in determining the properties of materials. In order to maximize the functionality of 2D materials, deep understanding and precise manipulation of the defects are indispensable. In the recent years, increasing research efforts have been made on the observation, understanding, manipulation, and control of defects in 2D materials. Here, we summarize the recent research progress of defect engineering on 2D materials. The defect engineering triggered by electron beam (e-beam), plasma, chemical treatment, and so forth is comprehensively reviewed. Firstly, e-beam irradiation-induced defect evolution, structural transformation, and novel structure fabrication are introduced. With the assistance of a high-resolution electron microscope, the dynamics of defect engineering can be visualized in situ. Subsequently, defect engineering employed to improve the performance of 2D devices by means of other methods of plasma, chemical, and ozone treatments is reviewed. At last, the challenges and opportunities of defect engineering on promoting the development of 2D materials are discussed. Through this review, we aim to build a correlation between defects and properties of 2D materials to support the design and optimization of high-performance electronic and optoelectronic devices.

Confinement Impact for the Dynamics of Supported Metal Nanocatalyst

Supported metal nanoparticles play key roles in nanoelectronics, sensors, energy storage/conversion, and catalysts for the sustainable production of fuels and chemicals. Direct observation of the dynamic processes of nanocatalysts at high temperatures and the confinement of supports is of great significance to investigate nanoparticle structure and functions for practical utilization. Here, in situ high-resolution transmission electron microscopy photos and videos are combined with dynamics simulations to reveal the real-time dynamic behavior of Pt nanocatalysts at operation temperatures. Amorphous Pt surface on moving and deforming particles is the working structure during the high operation temperature rather than a static crystal surface and immobilization on supports as proposed before. The free rearrangement of the shape of Pt nanoparticles allows them to pass through narrow windows, which is generally considered to immobilize the particles. The Pt particles, no matter what their sizes, prefer to stay inside nanopores even when they are fast moving near an opening at temperatures up to 900 °C. The porous confinement also blocks the sintering of the particles under the confinement size of pores. These contribute to the continuous high activity and stability of Pt nanocatalysts inside nanoporous supports during a long-term evaluation of catalytic reforming reaction.

Probing DNA Translocations with Inplane Current Signals in a Graphene Nanoribbon with a Nanopore

Many theoretical studies predict that DNA sequencing should be feasible by monitoring the transverse current through a graphene nanoribbon while a DNA molecule translocates through a nanopore in that ribbon. Such a readout would benefit from the special transport properties of graphene, provide ultimate spatial resolution because of the single-atom layer thickness of graphene, and facilitate high-bandwidth measurements. Previous experimental attempts to measure such transverse inplane signals were however dominated by a trivial capacitive response. Here, we explore the feasibility of the approach using a custom-made differential current amplifier that discriminates between the capacitive current signal and the resistive response in the graphene. We fabricate well-defined short and narrow (30 nm × 30 nm) nanoribbons with a 5 nm nanopore in graphene with a high-temperature scanning transmission electron microscope to retain the crystallinity and sensitivity of the graphene. We show that, indeed, resistive modulations can be observed in the graphene current due to DNA translocation through the nanopore, thus demonstrating that DNA sensing with inplane currents in graphene nanostructures is possible. The approach is however exceedingly challenging due to low yields in device fabrication connected to the complex multistep device layout.

In situ chemoresistive sensing in the environmental TEM: probing functional devices and their nanoscale morphology

In situ transmission electron microscopy provides exciting opportunities to address fundamental questions and technological aspects related to functional nanomaterials, including the structure-property relationships of miniaturized electronic devices. Herein, we report the in situ chemoresistive sensing in the environmental transmission electron microscope (TEM) with a single SnO₂ nanowire device, studying the impact of surface functionalization with heterogeneous nanocatalysts. By detecting toxic carbon monoxide (CO) gas at ppm-level concentrations inside the microscope column, the sensing properties of a single SnO₂ nanowire were characterized before and after decoration with hybrid Fe-Pd nanocubes. The structural changes of the supported nanoparticles induced by sensor operation were revealed, enabling direct correlation with CO sensing properties. Our novel approach is applicable for a broad range of functional nanomaterials and paves the way for future studies on the relationship between chemoresistive properties and nanoscale morphology.

Solid-state nanopore localization by controlled breakdown of selectively thinned membranes

We demonstrate precise positioning of nanopores fabricated by controlled breakdown (CBD) on solid-state membranes by spatially varying the electric field strength with localized membrane thinning. We show 100 × 100 nm² precision in standard SiN _x membranes (30-100 nm thick) after selective thinning by as little as 25% with a helium ion beam. Control over nanopore position is achieved through the strong dependence of the electric field-driven CBD mechanism on membrane thickness. Confinement of pore formation to the thinned region of the membrane is confirmed by TEM imaging and by analysis of DNA translocations. These results enhance the functionality of CBD as a fabrication approach and enable the production of advanced nanopore devices for single-molecule sensing applications.

Negative Electro-conductance in Suspended 2D WS2 Nanoscale Devices

We study the in situ electro-conductance in nanoscale electronic devices composed of suspended monolayer WS₂ with metal electrodes inside an aberration-corrected transmission electron microscope. Monitoring the conductance changes when the device is exposed to the electron beam of 80 keV energy reveals a reversible decrease in conductivity with increasing beam current density. The response time of the electro-conductance when exposed to the electron beam is substantially faster than the recovery time when the beam is turned off. We propose a charge trap model that accounts for excitation of electrons into the conduction band and localized trap states from energy supplied by inelastic scattering of incident 80 keV electrons. These results show how monolayer transition metal dichalcogenide 2D semiconductors can be used as transparent direct electron detectors in ultrathin nanoscale devices.

Electrical Detection of Single Graphene Plasmons

Plasmons-the collective oscillations of electrons in conducting materials-play a pivotal role in nanophotonics because of their ability to couple electronic and photonic degrees of freedom. In particular, plasmons in graphene-the atomically thin carbon material-offer strong spatial confinement and long lifetimes, accompanied by extraordinary optoelectronic properties derived from its peculiar electronic band structure. Understandably, this material has generated great expectations for its application to enhanced integrated devices. However, an efficient scheme for detecting graphene plasmons remains a challenge. Here we show that extremely compact graphene nanostructures are capable of realizing on-chip electrical detection of single plasmons. Specifically, we predict a 2-fold increase in the electrical current across a graphene nanostructure junction caused by the excitation of a single plasmon. This effect, which is due to the increase in electron temperature following plasmon decay, should persist during a picosecond time interval characteristic of electron-gas relaxation. We further show that a broad spectral detection range is accessible either by electrically doping the junction or by varying the size of the nanostructure. The proposed graphene plasmometer could find application as a basic component of future optics-free integrated nanoplasmonic devices.