Chemically Engineered Substrates for Patternable Growth of Two-Dimensional Chalcogenide Crystals

Two Dimensional Heterostructures for Optoelectronics: Current Status and Future Perspective

Researchers have found various families of two-dimensional (2D) materials and associated heterostructures through detailed theoretical work and experimental efforts. Such primitive studies provide a framework to investigate novel physical/chemical characteristics and technological aspects from micro to nano and pico scale. Two-dimensional van der Waals (vdW) materials and their heterostructures can be obtained to enable high-frequency broadband through a sophisticated combination of stacking order, orientation, and interlayer interactions. These heterostructures have been the focus of much recent research due to their potential applications in optoelectronics. Growing the layers of one kind of 2D material over the other, controlling absorption spectra via external bias, and external doping proposes an additional degree of freedom to modulate the properties of such materials. This mini review focuses on current state-of-the-art material design, manufacturing techniques, and strategies to design novel heterostructures. In addition to a discussion of fabrication techniques, it includes a comprehensive analysis of the electrical and optical properties of vdW heterostructures (vdWHs), particularly emphasizing the energy-band alignment. In the following sections, we discuss specific optoelectronic devices, such as light-emitting diodes (LEDs), photovoltaics, acoustic cavities, and biomedical photodetectors. Furthermore, this also includes a discussion of four different 2D-based photodetector configurations according to their stacking order. Moreover, we discuss the challenges that remain to be addressed in order to realize the full potential of these materials for optoelectronics applications. Finally, as future perspectives, we present some key directions and express our subjective assessment of upcoming trends in the field.

Nanopatterning Technologies of 2D Materials for Integrated Electronic and Optoelectronic Devices

With the reduction of feature size and increase of integration density, traditional 3D semiconductors are unable to meet the future requirements of chip integration. The current semiconductor fabrication technologies are approaching their physical limits based on Moore's law. 2D materials such as graphene, transitional metal dichalcogenides, etc., are of great promise for future memory, logic, and photonic devices due to their unique and excellent properties. To prompt 2D materials and devices from the laboratory research stage to the industrial integrated circuit-level, it is necessary to develop advanced nanopatterning methods to obtain high-quality, wafer-scale, and patterned 2D products. Herein, the recent development of nanopatterning technologies, particularly toward realizing large-scale practical application of 2D materials is reviewed. Based on the technological progress, the unique requirement and advances of the 2D integration process for logic, memory, and optoelectronic devices are further summarized. Finally, the opportunities and challenges of nanopatterning technologies of 2D materials for future integrated chip devices are prospected.

Site-selective growth of two-dimensional materials: strategies and applications

Over the years, there have been major advances in two-dimensional (2D) materials on account of their excellent and unique properties. Among the various strategies for 2D material fabrication, chemical vapor deposition (CVD) is considered as the most promising method to achieve large-area and high-quality 2D film growth. Furthermore, to realize the potential applications of 2D materials in different fields, the integration of 2D materials into functional devices is essential. However, the materials made by common CVD are randomly distributed on substrates, which is disadvantageous for fabricating arrays of devices. To solve this problem, a site-selective growth method was developed to meet the requirement of batch production for practical applications because it achieves control over the locations of products and benefits the subsequent direct integration. Herein, state-of-the-art methods for site-selective synthesis, including seeded growth and patterned growth, are reviewed. Then, the electronic and optoelectronic applications of the as-grown 2D materials are also reviewed. Finally, the remaining challenges and future prospects regarding site-selective methods and applications are discussed.

Filling the gap between topological insulator nanomaterials and triboelectric nanogenerators

Reliable energy modules and higher-sensitivity, higher-density, lower-powered sensing systems are constantly required to develop wearable electronics and the Internet of Things technology. As an emerging technology, triboelectric nanogenerators have been potentially guiding the landscape of sustainable power units and energy-efficient sensors. However, the existing triboelectric series is primarily populated by polymers and rubbers, limiting triboelectric sensing plasticity to some extent owing to their stiff surface electronic structures. To enrich the current triboelectric group, we explore the triboelectric properties of the topological insulator nanofilm by Kelvin probe force microscopy and reveal its relatively positive electrification charging performance. Both the larger surface potential difference and the conductive surface states of the nanofilms synergistically improve the charge transfer behavior between the selected triboelectric media, endowing the topological insulator-based triboelectric nanogenerator with considerable output performance. Besides serving as a wearable power source, the ultra-compact device array demonstrates innovative system-level sensing capabilities, including precise monitoring of dynamic objects and real-time signal control at the human-machine interface. This work fills the blank between topological quantum matters and triboelectric nanogenerators and, more importantly, exploits the significant potential of topological insulator nanofilms for self-powered flexible/wearable electronics and scalable sensing technologies.

2D Bi2Se3 materials for optoelectronics

2D layered materials with diverse exciting properties have recently attracted tremendous interest in the scientific community. Layered topological insulator Bi2Se3 comes into the spotlight as an exotic state of quantum matter with insulating bulk states and metallic Dirac-like surface states. Its unique crystal and electronic structure offer attractive features such as broadband optical absorption, thickness-dependent surface bandgap and polarization-sensitive photoresponse, which enable 2D Bi2Se3 to be a promising candidate for optoelectronic applications. Herein, we present a comprehensive summary on the recent advances of 2D Bi2Se3 materials. The structure and inherent properties of Bi2Se3 are firstly described and its preparation approaches (i.e., solution synthesis and van der Waals epitaxy growth) are then introduced. Moreover, the optoelectronic applications of 2D Bi2Se3 materials in visible-infrared detection, terahertz detection, and opto-spintronic device are discussed in detail. Finally, the challenges and prospects in this field are expounded on the basis of current development.

Ultrathin High-Quality SnTe Nanoplates for Fabricating Flexible Near-Infrared Photodetectors

This work demonstrates a controlled van der Waals growth of two-dimensional SnTe nanoplates on mica substrates and their applications in flexible near-infrared photodetectors. The growth of nonlayered rock-salt structured SnTe crystals into two-dimensional SnTe nanoplate structures is mainly caused by the two-dimensional nature of the mica surface, which also results in the ultrathin nanoplates obtained (3.6 nm, equivalent to 6 monolayers). Furthermore, it is found that the shape of the SnTe nanoplates can be well engineered by changing their growth temperature due to the competition between the surface energy of the {100} crystallographic plane and that of the {111} plane. As a result of the favorable physical properties of topological crystalline insulators such as metallic surface (high electron mobility) and narrow bandgap, near-infrared photodetectors based on single SnTe nanoplate with the thickness of 3.6 nm present excellent device performance with a responsivity of 698 mA/W, a specific detectivity of 3.89 × 10⁸ jones, and an external quantum efficiency of 88.5% under the illumination of a 980 nm laser at room temperature (300 K) without applying a gate voltage (V_g). Upon increasing the gate voltage from -30 to 30 V, the detector responsivity increases from 2.96 to 723 mA/W and the detector detectivity increases from 2.4 × 10⁶ to 5.3 × 10⁸ jones. Furthermore, upon increasing the thickness of SnTe nanoplate from 3.6 to 35 nm, the detector responsivity increases from 0.698 to 1.468 A/W. The device performance measured after bending for 300 times as well as after bending with different radii presents no obvious degradation, which exhibits the excellent flexibility of the SnTe nanoplate detectors. These results not only contribute to a deep understanding of the mechanisms of the van der Waals growth of nonlayered materials into two-dimensional structure but also demonstrate the immense potential of SnTe nanoplates to be used in flexible near-infrared detectors.

Selective Synthesis of Bi2Te3/WS2 Heterostructures with Strong Interlayer Coupling

The vertical integration of atomically thin-layered materials to create van der Waals heterostructures (vdWHs) has been proposed as a method to design nanostructures with emergent properties. In this work, epitaxial Bi2Te3/WS2 vdWHs are synthesized via a two-step vapor deposition process. It is calculated that the vdWH has an indirect band gap with a valence band edge that bridges the vdW gap, resulting in a quenched photoluminescence (PL) from the WS2 monolayer, reduced intensity of its resonance Raman vibrational peaks, improved vertical charge transport, and a decrease in the intensity of second harmonic generation (SHG). Furthermore, it is observed that induced defects strongly influence the nucleation and growth of vdWHs. By creating point defects in WS2 monolayers, it is shown that the growth of Bi2Te3 platelets can be patterned. This work offers important insights into the synthesis, defect engineering, and moiré engineering of an emerging class of two-dimensional (2D) heterostructures.

Confined van der Waals Epitaxial Growth of Two-Dimensional Large Single-Crystal In2Se3 for Flexible Broadband Photodetectors

The controllable growth of two-dimensional (2D) semiconductors with large domain sizes and high quality is much needed in order to reduce the detrimental effect of grain boundaries on device performance but has proven to be challenging. Here, we analyze the precursor concentration on the substrate surface which significantly influences nucleation density in a vapor deposition growth process and design a confined micro-reactor to grow 2D In₂Se₃ with large domain sizes and high quality. The uniqueness of this confined micro-reactor is that its size is ~10²-10³ times smaller than that of a conventional reactor. Such a remarkably small reactor causes a very low precursor concentration on the substrate surface, which reduces nucleation density and leads to the growth of 2D In₂Se₃ grains with sizes larger than 200 μm. Our experimental results show large domain sizes of the 2D In₂Se₃ with high crystallinity. The flexible broadband photodetectors based on the as-grown In₂Se₃ show rise and decay times of 140 ms and 25 ms, efficient response (5.6 A/W), excellent detectivity (7×10¹⁰ Jones), high external quantum efficiency (251%), good flexibility, and high stability. This study, in principle, provides an effective strategy for the controllable growth of high quality 2D materials with few grain boundaries.

Soft-Lithographic Patterning of Luminescent Carbon Nanodots Derived from Collagen Waste

Luminescent carbon dots (Cdots) synthesized using inexpensive precursors have inspired tremendous research interest because of their superior properties and applicability in various fields. In this work, we report a simple, economical, green route for the synthesis of multifunctional fluorescent Cdots prepared from a natural, low-cost source: collagen extracted from animal skin wastes. The as-synthesized metal-free Cdots were found to be in the size range of ∼1.2-9 nm, emitting bright blue photoluminescence with a calculated Cdot yield of ∼63%. Importantly, the soft-lithographic method used was inexpensive and yielded a variety of Cdot patterns with different geometrical structures and significant cellular biocompatibility. This novel approach to Cdot production highlights innovative ways of transforming industrial biowastes into advanced multifunctional materials which offer exciting potential for applications in nanophotonics and nanobiotechnology using a simple and scalable technique.

Versatile Large-Area Custom-Feature van der Waals Epitaxy of Topological Insulators

As the focus of applied research in topological insulators (TI) evolves, the need to synthesize large-area TI films for practical device applications takes center stage. However, constructing scalable and adaptable processes for high-quality TI compounds remains a challenge. To this end, a versatile van der Waals epitaxy (vdWE) process for custom-feature bismuth telluro-sulfide TI growth and fabrication is presented, achieved through selective-area fluorination and modification of surface free-energy on mica. The TI features grow epitaxially in large single-crystal trigonal domains, exhibiting armchair or zigzag crystalline edges highly oriented with the underlying mica lattice and only two preferred domain orientations mirrored at 180°. As-grown feature thickness dependence on lateral dimensions and denuded zones at boundaries are observed, as explained by a semiempirical two-species surface migration model with robust estimates of growth parameters and elucidating the role of selective-area surface modification. Topological surface states contribute up to 60% of device conductance at room temperature, indicating excellent electronic quality. High-yield microfabrication and the adaptable vdWE growth mechanism with readily alterable precursor and substrate combinations lend the process versatility to realize crystalline TI synthesis in arbitrary shapes and arrays suitable for facile integration with processes ranging from rapid prototyping to scalable manufacturing.