Vapor Growth and Tunable Lasing of Band Gap Engineered Cesium Lead Halide Perovskite Micro/Nanorods with Triangular Cross Section

On-Wire Design of Axial Periodic Halide Perovskite Superlattices for High-Performance Photodetection

Precise synthesis of all-inorganic lead halide perovskite nanowire heterostructures and superlattices with designable modulation of chemical compositions is essential for tailoring their optoelectronic properties. Nevertheless, controllable synthesis of perovskite nanostructure heterostructures remains challenging and underexplored to date. Here, we report a rational strategy for wafer-scale synthesis of one-dimensional periodic CsPbCl3/CsPbI3 superlattices. We show that the highly parallel array of halide perovskite nanowires can be prepared roughly as horizontally guided growth on an M-plane sapphire. A periodic patterning of the sapphire substrate enables position-selective ion exchange to obtain highly periodic CsPbCl3/CsPbI3 nanowire superlattices. This patterning is further confirmed by micro-photoluminescence investigations, which show that two separate band-edge emission peaks appear at the interface of a CsPbCl3/CsPbI3 heterojunction. Additionally, compared with the pure CsPbCl3 nanowires, photodetectors fabricated using these periodic heterostructure nanowires exhibit superior photoelectric performance, namely, high ION/IOFF ratio (104), higher responsivity (49 A/W), and higher detectivity (1.51 × 1013 Jones). Moreover, a spatially resolved visible image sensor based on periodic nanowire superlattices is demonstrated with good imaging capability, suggesting promising application prospects in future photoelectronic imaging systems. All these results based on the periodic CsPbCl3/CsPbI3 nanowire superlattices provides an attractive material platform for integrated perovskite devices and circuits.

Improved electronic uniformity and nanoscale homogeneity in template-grown CsPbBr3 nanorods

One-dimensional metal halide perovskites are among the most promising candidate materials for optoelectronic devices. However, the heterogeneity and fast degradation of perovskite nanowires (NWs) and nanorods (NRs) synthesized using conventional approaches impose a bottleneck for their optoelectronic applications. Recently, all-inorganic perovskite CsPbBr3 NRs with tailored dimensions, crafted using an amphiphilic bottlebrush-like block copolymer (BBCP) as nanoreactors, have demonstrated enhanced stabilities. Herein, we report the electronic investigation into these template-grown CsPbBr3 NRs using dielectric force microscopy (DFM), a contactless, nondestructive imaging technique. All freshly prepared CsPbBr3 NRs exhibited ambipolar behaviors for up to two months after sample synthesis. A transition from ambipolar to p-type behaviors occurred after two months, and nearly all NRs completed the transition within two weeks. Moreover, template-grown CsPbBr3 NRs displayed better nanoscale electronic homogeneity compared to their conventional counterparts. The improved electronic uniformity and nanoscale homogeneity place the template-grown CsPbBr3 NRs in a unique advantageous position for optoelectronic applications.

Inorganic perovskite-based active multifunctional integrated photonic devices

The development of highly efficient active integrated photonic circuits is crucial for advancing information and computing science. Lead halide perovskite semiconductors, with their exceptional optoelectronic properties, offer a promising platform for such devices. In this study, active micro multifunctional photonic devices were fabricated on monocrystalline CsPbBr3 perovskite thin films using a top-down etching technique with focused ion beams. The etched microwire exhibited a high-quality micro laser that could serve as a light source for integrated devices, facilitating angle-dependent effective propagation between coupled perovskite-microwire waveguides. Employing this strategy, multiple perovskite-based active integrated photonic devices were realized for the first time. These devices included a micro beam splitter that coherently separated lasing signals, an X-coupler performing transfer matrix functions with two distinguishable light sources, and a Mach-Zehnder interferometer manipulating the splitting and coalescence of coherent light beams. These results provide a proof-of-concept for active integrated functionalized photonic devices based on perovskite semiconductors, representing a promising avenue for practical applications in integrated optical chips.

Direct chemical-vapor-deposition growth of alloyed perovskite microcrystals for tunable emissions

Tunable composition of perovskite micro/nanostructures are perfect candidate for the designing of multifunctional optoelectronic circuits. Especially, integrated polychromatic luminescence based on the perovskite materials along a single substrate or chip is essential to the integrated photonic devices and multicolor displays. Here, we reported a synthesis of composition tunable CsPbI3(1-x)Br3x(X = 0.65-0.9) perovskite microstructures on a single substrate via a magnetic-pulling CVD method. The PL emissions can be changed gradually from green (558 nm, 2.23 eV) to red (610 nm, 2.03 eV) under a focused 375 nm laser illumination. Furthermore, these composition-graded alloyed perovskite microcrystals show stable emissions after six months in air, which may find applications in multicolor display and broad band light sources in the future.

Linearly Manipulating Color Emission via Anion Exchange Technology for High Performance Amplified Spontaneous Emission of Perovskites

The most attractive advantages of all-inorganic cesium lead halide perovskites are their optical gain over broad spectral ranges through the visible spectrum, so are well suited to use in tunable lasers or broadband amplifiers. Most reported anion exchange reactions face a challenge to achieve the desired halogen-variable perovskites due to rapid and uncontrollable reactions and difficulty to synthesize directly. In this study, a simple vapor/solid anion exchange strategy is demonstrated for controlling the reaction process and realizing a wide range tuning of band gap and amplified spontaneous emission (ASE) wavelength, which exhibits a temperature-dependent anion exchange rate. By optimizing the reaction temperature at 90 °C, the ASE wavelength can be linearly manipulated by just controlling the reaction time. A clear quantitative relationship between ASE peak position and reaction time is achieved. Compares with the CsPbClBr2 film obtained via the liquid phase anion exchange method, the fabricated perovskite films obtained by vapor/solid anion exchange technology exhibit superior film quality and enhanced ASE performance. This work may have applications in the future using facile and controllable techniques to develop high-quality full-color visible lasers.

Ultrafast Antisolvent Growth of Single-Crystal CsPbBr3 Microcavity for Whispering-Gallery-Mode Lasing

In recent years, all-inorganic cesium lead bromide (CsPbBr₃) perovskites have garnered considerable attention for their prospective applications in green photonics and optoelectronic devices. However, the development of efficient and economical methods to obtain high-quality micron-sized single-crystalline CsPbBr₃ microplatelets (MPs) has become a challenge. Here, we report the synthesis of CsPbBr₃ MPs on Si/SiO₂ substrate by optimizing the ultrafast antisolvent method (FAS). This technique is able to produce well-dispersed, uniformly sized, and morphologically regular tetragonal phase single crystals, which can give strong green emission at room temperature, with excellent stability and excitonic character. Moreover, the crystals demonstrated lasing with a whispering gallery mode with a low threshold. These results suggest that the single-crystalline CsPbBr₃ MPs synthesized by this method are of high optical quality, holding vast potential for future applications in photonic devices.

Metal Halide Perovskite Nanowires: Controllable Synthesis, Mechanism, and Application in Optoelectronic Devices

Metal halide perovskites are promising energy materials because of their high absorption coefficients, long carrier lifetimes, strong photoluminescence, and low cost. Low-dimensional halide perovskites, especially one-dimensional (1D) halide perovskite nanowires (NWs), have become a hot research topic in optoelectronics owing to their excellent optoelectronic properties. Herein, we review the synthetic strategies and mechanisms of halide perovskite NWs in recent years, such as hot injection, vapor phase growth, selfassembly, and solvothermal synthesis. Furthermore, we summarize their applications in optoelectronics, including lasers, photodetectors, and solar cells. Finally, we propose possible perspectives for the development of halide perovskite NWs.

Hot-Injection Synthesis Protocol for Green-Emitting Cesium Lead Bromide Perovskite Nanocrystals

All-inorganic cesium lead bromide (CsPbBr₃) nanocrystals are one of the prominent members of the metal halide perovskite family of semiconductor materials, which possess considerable stability and excellent optoelectronic properties leading to a multitude of their potential applications in solar cells, light-emitting devices, photodetectors, and lasers. Hot-injection strategy is a popular method used to synthesize CsPbBr₃ nanocrystals, which provides a convenient route to produce them in the shape of rather monodisperse nanocubes. As in any synthetic procedure, there are different factors like temperature, surface ligands, precursor concentration, as well as necessary postpreparation purification steps. Herein, we provide a comprehensive hot-injection synthesis protocol for CsPbBr₃ nanocrystals, outlining intrinsic and extrinsic factors that affect its reproducibility and elucidating in detail the precursor solution preparation, nanocrystal formation and growth, and postpreparative purification and storage conditions to allow for the fabrication of high-quality green-emitting material.

Real-Time Study of Surface-Guided Nanowire Growth by In Situ Scanning Electron Microscopy

Surface-guided growth has proven to be an efficient approach for the production of nanowire arrays with controlled orientations and their large-scale integration into electronic and optoelectronic devices. Much has been learned about the different mechanisms of guided nanowire growth by epitaxy, graphoepitaxy, and artificial epitaxy. A model describing the kinetics of surface-guided nanowire growth has been recently reported. Yet, many aspects of the surface-guided growth process remain unclear due to a lack of its observation in real time. Here we observe how surface-guided nanowires grow in real time by in situ scanning electron microscopy (SEM). Movies of ZnSe surface-guided nanowires growing on periodically faceted substrates of annealed M-plane sapphire clearly show how the nanowires elongate along the substrate nanogrooves while pushing the catalytic Au nanodroplet forward at the tip of the nanowire. The movies reveal the timing between competing processes, such as planar vs nonplanar growth, catalyst-selective vapor-liquid-solid elongation vs nonselective vapor-solid thickening, and the effect of topographic discontinuities of the substrate on the growth direction, leading to the formation of kinks and loops. Contrary to some observations for nonplanar nanowire growth, planar nanowires are shown to elongate at a constant rate and not by jumps. A decrease in precursor concentration as it is consumed after long reaction time causes the nanowires to shrink back instead of growing, thus indicating that the process is reversible and takes place near equilibrium. This real-time study of surface-guided growth, enabled by in situ SEM, enables a better understanding of the formation of nanostructures on surfaces.

Recent progress and future prospects on halide perovskite nanocrystals for optoelectronics and beyond

As an emerging new class of semiconductor nanomaterials, halide perovskite (ABX₃, X = Cl, Br, or I) nanocrystals (NCs) are attracting increasing attention owing to their great potential in optoelectronics and beyond. This field has experienced rapid breakthroughs over the past few years. In this comprehensive review, halide perovskite NCs that are either freestanding or embedded in a matrix (e.g., perovskites, metal-organic frameworks, glass) will be discussed. We will summarize recent progress on the synthesis and post-synthesis methods of halide perovskite NCs. Characterizations of halide perovskite NCs by using a variety of techniques will be present. Tremendous efforts to tailor the optical and electronic properties of halide perovskite NCs in terms of manipulating their size, surface, and component will be highlighted. Physical insights gained on the unique optical and charge-carrier transport properties will be provided. Importantly, the growing potential of halide perovskite NCs for advancing optoelectronic applications and beyond including light-emitting devices (LEDs), solar cells, scintillators and X-ray imaging, lasers, thin-film transistors (TFTs), artificial synapses, and light communication will be extensively discussed, along with prospecting their development in the future.

Perovskite Quantum Dots for Emerging Displays: Recent Progress and Perspectives

The excellent luminescence properties of perovskite quantum dots (PQDs), including wide excitation wavelength range, adjustable emission wavelength, narrow full width at half maximum (FWHM), and high photoluminescence quantum yield (PLQY), highly match the application requirements in emerging displays. Starting from the fundamental structure and the related optical properties, this paper first introduces the existing synthesis approaches of PQDs that have been and will potentially be used for display devices, and then summarizes the stability improving approaches with high retention of PQDs' optical performance. Based on the above, the recent research progress of PQDs in displays is further elaborated. For photoluminescent display applications, the PQDs can be embedded in the backlighting device or color filter for liquid crystal displays (LCD), or they may function as the color conversion layer for blue organic light-emitting diodes (OLED) and blue micro-scale light-emitting diodes (μLED). In terms of next-generation electroluminescent displays, notable progress in perovskite quantum-dot light emitting diodes (PeQLED) has been achieved within the past decade, especially the maximum external quantum efficiency (EQE). To conclude, the key directions for future PQD development are summarized for promising prospects and widespread applications in display fields.

Strongly Quantum-Confined Perovskite Nanowire Arrays for Color-Tunable Blue-Light-Emitting Diodes

Color tunability of perovskite light-emitting diodes (PeLEDs) by mixed halide compositional engineering is one of the primary intriguing characteristics of PeLEDs. However, mixed halide PeLEDs are often susceptible to color red-shifting caused by halide ion segregation. In this work, strongly quantum-confined perovskite nanowires (QPNWs) made of CsPbBr₃ are grown in nanoporous anodic alumina templates using a closed space sublimation process. By tuning the pore size with atomic layer deposition, QPNWs with a diameter of 6.6 to 2.8 nm have been successfully obtained, with continuous tunable photoluminescence emission color from green (512 nm) to pure blue (467 nm). To better understand the photophysics of QPNWs, carrier dynamics and the benefit of alumina passivation are studied and discussed in detail. Eventually, PeLEDs using various diameters of CsPbBr₃ QPNWs are successfully fabricated with cyan color (492 nm) PeLEDs, achieving a record high 7.1% external quantum efficiency (EQE) for all CsPbBr₃-based cyan color PeLEDs. Sky blue (481 nm) and pure blue (467 nm) PeLEDs have also been successfully demonstrated, respectively. The work here demonstrates a different approach to achieve quantum-confined one-dimensional perovskite structures and color-tunable PeLEDs, particularly blue PeLEDs.

Ultrafast Antisolvent Growth of Single-Crystalline CsPbCl3 Microcavity for Low-Threshold Room Temperature Blue Lasing

All-inorganic perovskite CsPbCl₃ has recently attracted considerable attention due to its great potentials for the development of high-efficiency, deep-blue optoelectronic devices. Particularly, single-crystalline CsPbCl₃ planar microstructures provide good platforms for both fundamental studies and nanophotonics applications from lasers and detectors to amplifiers. In this study, we report an ultrafast antisolvent deposition route to fabricate single-crystalline CsPbCl₃ microplatelets (MPs). The as-grown MPs exhibit uniform morphology, strong emission, and outstanding gain property. Room temperature photoluminescence lasing is realized at 428 nm with a low threshold of 11.5 μJ cm^-2 and high net optical gain up to 720 cm^-1. These findings advance fundamental understanding on the fabrication and optoelectronic applications of low-dimensional CsPbCl₃ perovskite structures.

Photoelectric Logic and In Situ Memory Transistors with Stepped Floating Gates of Perovskite Quantum Dots

Electronic-Photonic integrated systems have attracted intensive attention in addressing the explosively increasing data-processing issue in the post-Moore era. However, the tremendous size difference between basic electronic and photonic units poses challenges for the further deep convergence of optoelectronic microprocessors. Here, we report a floating-gate transistor fabricated with complementary metal-oxide-semiconductor compatible technologies, which can realize multilevel photoelectric logic computing and in situ memory simultaneously. The transistor presents stepped floating gates of perovskite quantum dots with different bandgaps and exhibits nonvolatile multilevel memory states written/erased by electrical and high-bandwidth optical signals. Meanwhile, the device can also realize logic functions such as an optoelectronic AND gate by separably programming the states of the stepped floating gates with bias and optical wavelength. A convergence of multilevel logic computing and storage is further achieved on the transistor. By demonstrating such multifunctionality in a single device, the photoelectric transistors, even with a rather large size to match photonic cells, can provide the optoelectronic microprocessors with substantially improved performances.

Enhance luminescence or change morphology: effect of the doping method on Cu2+-doped CsPbBr3 perovskite nanocrystals

The effect of Cu2+ on CsPbBr3 nanocrystals is compared between the hot-injection method and postsynthetic cation-exchange reaction.

Shedding light on the energy applications of emerging 2D hybrid organic-inorganic halide perovskites

Unique performance of the hybrid organic-inorganic halide perovskites (HOIPs) has attracted great attention because of their continuous exploration and breakthrough in a multitude of energy-related applications. However, the instability and lead-induced toxicity that arise in bulk perovskites are the two major challenges that impede their future commercialization process. To find a solution, a series of two-dimensional HOIPs (2D HOIPs) are investigated to prolong the device lifetime with highly efficient photoelectric conversion and energy storage. Herein, the recent advances of 2D HOIPs and their structural derivatives for the energy realms are summarized and discussed. The basic understanding of crystal structures, physicochemical properties, and growth mechanisms is presented. In addition, the current challenges and future directions to provide a roadmap for the development of next generation 2D HOIPs are prospected

Characteristics of multi-mode lasing in cesium lead bromide perovskite microwires with an isosceles right triangle cross-section

The CsPbBr₃ microwires with unique isosceles right triangle cross-sections are commonly observed via chemical vapor deposition method. In this work, we study the correlations between measured multi-mode lasing behaviors and the simulation of the mode patterns inside the triangular-rod microcavity. We confirm that lasing action with higher-order transverse modes can well sustain, even when these modes experience large optical loss due to the isosceles triangle cross-section. By comparing the experimental and simulation results, the higher-order transverse modes tend to show up prior to the fundamental transverse modes for wider microwires. We attribute this behavior to the nonuniform field distribution caused by the high absorption efficiency of CsPbBr₃. We also elaborate on the difficulties to sustain the whispering gallery mode in the CsPbBr₃ triangular-rod microcavity, which implies that the lateral dimension and geometry of the cavity should be considered carefully for the future design of low threshold wire-based laser devices.

Current status on synthesis, properties and applications of CsPbX3(X = Cl, Br, I) perovskite quantum dots/nanocrystals

The quantum confinement effect and interesting optical properties of cesium lead halide (CsPbX₃; X = Cl, Br, I) perovskite quantum dots (QDs) and nanocrystals (NCs) have given a new horizon to lighting and photonic applications. Given the exponential rate at which scientific results on CsPbX₃NCs are published in the last few years, it can be expected that the research in CsPbX₃NCs will further receive increasing scientific interests in the near future and possibly lead to great commercial opportunities to realize these materials based practical applications. With the rapid progress in the single-photon emitting CsPbX₃QDs and NCs, practical applications of the quantum technologies such as single-photon emitting light-emitting diode, quantum lasers, quantum computing might soon be possible. But to reach at cutting edge of stable perovskite QDs/NCs, the study of fundamental insight and theoretical aspects of crystal design is yet insufficient. Even more, it has aroused many unanswered questions related to the stability, optical and electronic properties of the CsPbX₃QDs. Aim of the present review is to illustrate didactically a precise study of recent progress in the synthesis, properties and applications of CsPbX₃QDs and NCs. Critical issues that currently restrict the applicability of these QDs will be identified and advanced methodologies currently in the developing queue, to overcome the roadblock, will be presented. And finally, the prospects for future directions will be provided.

State of the Art and Prospects for Halide Perovskite Nanocrystals

Metal-halide perovskites have rapidly emerged as one of the most promising materials of the 21st century, with many exciting properties and great potential for a broad range of applications, from photovoltaics to optoelectronics and photocatalysis. The ease with which metal-halide perovskites can be synthesized in the form of brightly luminescent colloidal nanocrystals, as well as their tunable and intriguing optical and electronic properties, has attracted researchers from different disciplines of science and technology. In the last few years, there has been a significant progress in the shape-controlled synthesis of perovskite nanocrystals and understanding of their properties and applications. In this comprehensive review, researchers having expertise in different fields (chemistry, physics, and device engineering) of metal-halide perovskite nanocrystals have joined together to provide a state of the art overview and future prospects of metal-halide perovskite nanocrystal research.

Oriented Halide Perovskite Nanostructures and Thin Films for Optoelectronics

Oriented semiconductor nanostructures and thin films exhibit many advantageous properties, such as directional exciton transport, efficient charge transfer and separation, and optical anisotropy, and hence these nanostructures are highly promising for use in optoelectronics and photonics. The controlled growth of these structures can facilitate device integration to improve optoelectronic performance and benefit in-depth fundamental studies of the physical properties of these materials. Halide perovskites have emerged as a new family of promising and cost-effective semiconductor materials for next-generation high-power conversion efficiency photovoltaics and for versatile high-performance optoelectronics, such as light-emitting diodes, lasers, photodetectors, and high-energy radiation imaging and detectors. In this Review, we summarize the advances in the fabrication of halide perovskite nanostructures and thin films with controlled dimensionality and crystallographic orientation, along with their applications and performance characteristics in optoelectronics. We examine the growth methods, mechanisms, and fabrication strategies for several technologically relevant structures, including nanowires, nanoplates, nanostructure arrays, single-crystal thin films, and highly oriented thin films. We highlight and discuss the advantageous photophysical properties and remarkable performance characteristics of oriented nanostructures and thin films for optoelectronics. Finally, we survey the remaining challenges and provide a perspective regarding the opportunities for further progress in this field.

All-Inorganic Perovskite Nanorod Arrays with Spatially Randomly Distributed Lasing Modes for All-Photonic Cryptographic Primitives

The level of hardware or information security can be increased by applying physical unclonable functions (PUFs), which have a high complexity and unique nonreplicability and are based on random physical patterns generated by nature, to anticounterfeiting and encryption technologies. The preparation of PUFs should be as simple and convenient as possible, while maintaining the high complexity and stability of PUFs to ensure high reliability in use. In this study, an all-inorganic perovskite single-crystal array with a controllable morphology and a random size was prepared by a one-step recrystallization method in a solvent atmosphere to generate all-photonic cryptographic primitives. The nondeterministic size of the perovskite nanorods mainly arises from crystal growth in an indeterminate direction, producing a high entropy for the system. The cavity-size-dependent lasing emission behavior of perovskite single crystals was investigated as a preliminary exploration of the generation of all-photonic cryptographic primitives. The lasing-mode number was positively correlated with the length of the perovskite nanorods. Therefore, the prepared perovskite nanorod array with random sizes can be transformed into a quaternary cryptographic key array following encoding rules based on the lasing-mode number. Superior lasing stability was observed for the all-inorganic perovskite under continuous excitation, demonstrating the high reliability of this system.

Recent Advances in Ligand Design and Engineering in Lead Halide Perovskite Nanocrystals

Lead halide perovskite (LHP) nanocrystals (NCs) have recently garnered enhanced development efforts from research disciplines owing to their superior optical and optoelectronic properties. These materials, however, are unlike conventional quantum dots, because they possess strong ionic character, labile ligand coverage, and overall stability issues. As a result, the system as a whole is highly dynamic and can be affected by slight changes of particle surface environment. Specifically, the surface ligand shell of LHP NCs has proven to play imperative roles throughout the lifetime of a LHP NC. Recent advances in engineering and understanding the roles of surface ligand shells from initial synthesis, through postsynthetic processing and device integration, finally to application performances of colloidal LHP NCs are covered here.

Recent advances toward environment-friendly photodetectors based on lead-free metal halide perovskites and perovskite derivatives

Recently, metal-halide perovskites have emerged as promising materials for photodetector (PD) applications owing to their superior optoelectronic properties, such as ambipolar charge transport characteristics, high carrier mobility, and so on. In the past few years, rapid progress in lead-based perovskite PDs has been witnessed. However, the critical environmental instability and lead-toxicity seriously hinder their further applications and commercialization. Therefore, searching for environmentally stable and lead-free halide perovskites (LFHPs) to address the above hurdles is certainly a worthwhile subject. In this review, we present a comprehensive overview of currently explored LFHPs with an emphasis on their crystal structures, optoelectronic properties, synthesis and modification methods, as well as the PD applications. LFHPs are classified into four categories according to the replacement strategies of Pb²⁺, including AB(ii)X₃, A₃B(iii)₂X₉, A₂B(i)B(iii)'X₆, and newly-emerging perovskite derivatives. Then, we give a demonstration of the preliminary achievements and limitations in environment-friendly PDs based on such LFHPs and perovskite derivatives, and also discuss their applications in biological synapses, imaging, and X-ray detection. With the perspective of their properties and current challenges, we provide an outlook for future directions in this rapidly evolving field to achieve high-quality LFHPs and perovskite derivatives for a broader range of fundamental research and practical applications.

Superkinetic Growth of Oval Organic Semiconductor Microcrystals for Chaotic Lasing

Synthesis of novel mesoscopic semiconductor architectures continually generates new photonic knowledge and applications. However, it remains a great challenge to synthesize semiconductor microcrystals with smoothly curved surfaces owing to the crystal growth anisotropy. Here, a superkinetic crystal growth method is developed to synthesize 2D oval organic semiconductor microcrystals. The solid source dispersion induces an exceptionally large molecular supersaturation for vapor deposition, which breaks the crystal growth anisotropy. The synthesized stadium-shaped organic semiconductor microcrystals naturally constitute fully chaotic optical microresonators. They support low-threshold lasing on high-quality-factor scar modes localized near the stadium boundary and directional laser emission assisted by the chaotic modes. These results will reshape the understanding of the crystal growth theory and provide valuable guidance for crystalline photonic materials design.

Smart Protein-Based Biolasers: An Alternative Way to Protein Conformation Detection

Detecting conformational changes in protein is imperative due to its major role in neurodegenerative disorders. Here, we propose an alternative strategy for monitoring the structural change of proteins based on biological microlasers. Smart responsive protein-based microscale biolasers were constructed by incorporating organic gain medium into the microspheres of silk fibroin via emulsion-solvent evaporation. The lasing characteristic of the biolasers exhibited a sensitive response to the structural transformation of the silk fibroin. With narrowed linewidth, the as-prepared biolasers as sensing signals enable highly sensitive protein conformation detection. These results offer an effective approach to monitoring the protein conformational changes and provide valuable guidance for a better understanding of the relationship between bio-microstructures and their photonic properties.

Perovskite random lasers: a tunable coherent light source for emerging applications

Metal halide perovskites have attracted increasing attention due to their superior optical and electrical characteristics, flexible tunability, and easy fabrication processes. Apart from their unprecedented successes in photovoltaic devices, lasing action is the latest exploitation of the optoelectronic performance of perovskites. Among the substantial body of research on the configuration design and light emission quality of perovskite lasers, the random laser is a very interesting stimulated emission phenomenon with unique optical characteristics. In this review article, we first comprehensively overview the development of perovskite-based optoelectronic devices and then focus our discussion on random lasing performance. After an introduction to the historical development of versatile random lasers and perovskite random lasers, we summarize several synthesis methods and discuss their material configurations and stability in synthesized perovskite materials. Following this, a theoretical approach is provided to explain the random lasing mechanism in metal halide perovskites. Finally, we propose future applications of perovskite random lasers, presenting conclusions as well as future challenges, such as quality stability and toxicity reduction, of perovskite materials with regard to practical applications in this promising field.

Halide Perovskite Semiconductor Lasers: Materials, Cavity Design, and Low Threshold

Solution-processable semiconductor lasers have been a long-standing challenge for next-generation displays, light sources, and communication technologies. Metal halide perovskites, which combine the advantages of inorganic and organic semiconductors, have recently emerged not only as excellent candidates for solution-processable lasers but also as potential complementary gain materials for filling the "green gap" and supplement industrial nanolasers based on classic II-VI/III-V semiconductors. Numerous perovskite lasers have been developed successfully with superior performance in terms of cost-effectiveness, low threshold, high coherence, and multicolor tunability. This mini review surveys the development, current status, and perspectives of perovskite lasers, categorized into thin film lasers, nanocrystals lasers, microlasers, and device concepts including polariton and bound-in-continuum lasers with a focus on material fundamentals, cavity design, and low-threshold devices in addition to critical issues such as mass fabrication and applications.

Single-mode lasing of CsPbBr3 perovskite NWs enabled by the Vernier effect

Inorganic lead halide perovskite (CsPbX3, X = Cl, Br, I) NWs (NWs) have been employed in lasers due to their intriguing attributes of tunable wavelength, low threshold, superior stability, and easy preparation. However, current CsPbX3 NW lasers usually work in a multi-mode modal, impeding their practical applications in optical communication due to the associated false signaling. In this work, high-performance single-mode lasing has been demonstrated by designing and fabricating coupled cavities in the high-quality single-crystal CsPbBr3 NWs via the focused ion beam (FIB) milling approach. The single-mode laser shows a threshold of 20.1 μJ cm-2 and a high quality factor of ∼2800 profiting from the Vernier effect, as demonstrated by the experiments and finite-different time-domain (FDTD) simulations. These results demonstrate the promising potentials of the CsPbX3 NW lasers in optical communication and integrated optoelectronic devices.

Large-Scale Thin CsPbBr3 Single-Crystal Film Grown on Sapphire via Chemical Vapor Deposition: Toward Laser Array Application

Single-crystal perovskites with excellent photophysical properties are considered to be ideal materials for optoelectronic devices, such as lasers, light-emitting diodes and photodetectors. However, the growth of large-scale perovskite single-crystal films (SCFs) with high optical gain by vapor-phase epitaxy remains challenging. Herein, we demonstrated a facile method to fabricate large-scale thin CsPbBr₃ SCFs (∼300 nm) on the c-plane sapphire substrate. High temperature is found to be the key parameter to control low reactant concentration and sufficient surface diffusion length for the growth of continuous CsPbBr₃ SCFs. Through the comprehensive study of the carrier dynamics, we clarify that the trapped-related exciton recombination has the main effect under low carrier density, while the recombination of excitons and free carriers coexist until free carriers plays the dominate role with increasing carrier density. Furthermore, an extremely low-threshold (∼8 μJ cm^-2) amplified spontaneous emission was achieved at room temperature due to the high optical gain up to 1255 cm^-1 at a pump power of 20 times threshold (∼20 P_th). A microdisk array was prepared using a focused ion beam etching method, and a single-mode laser was achieved on a 3 μm diameter disk with the threshold of 1.6 μJ cm^-2. Our experimental results not only present a versatile method to fabricate large-scale SCFs of CsPbBr₃ but also supply an arena to boost the optoelectronic applications of CsPbBr₃ with high performance.

Metal Halide Perovskite Nanorods: Shape Matters

Quasi-1D metal halide perovskite nanorods (NRs) are emerging as a type of materials with remarkable optical and electronic properties. Research into this field is rapidly expanding and growing in the past several years, with significant advances in both mechanistic studies of their growth and widespread possible applications. Here, the recent advances in 1D metal halide perovskite nanocrystals (NCs) are reviewed, with a particular emphasis on NRs. At first, the crystal structures of perovskites are elaborated, which is followed by a review of the major synthetic approaches toward perovskite NRs, such as wet-chemical synthesis, substrate-assisted growth, and anion exchange reactions, and discussion of the growth mechanisms associated with each synthetic method. Then, thermal and aqueous stability and the linear polarized luminescence of perovskite NRs are considered, followed by highlighting their applications in solar cells, light-emitting diodes, photodetectors/phototransistors, and lasers. Finally, challenges and future opportunities in this rapidly developing research area are summarized.

Perovskite Core-Shell Nanowire Transistors: Interfacial Transfer Doping and Surface Passivation

While halide perovskite electronics are rapidly developing, they are greatly limited by the inferior charge transport and poor stability. In this work, effective surface charge transfer doping of vapor-liquid-solid (VLS)-grown single-crystalline cesium lead bromide perovskite (CsPbBr₃) nanowires (NWs) via molybdenum trioxide (MoO₃) surface functionalization is achieved. Once fabricated into NW devices, due to the efficient interfacial charge transfer and reduced impurity scattering, a 15× increase in the field-effect hole mobility (μ_h) from 1.5 to 23.3 cm²/(V s) is accomplished after depositing the 10 nm thick MoO₃ shell. This enhanced mobility is already better than any mobility value reported for perovskite field-effect transistors (FETs) to date. The photodetection performance of these CsPbBr₃/MoO₃ core-shell NWs is also investigated to yield a superior responsivity (R) up to 2.36 × 10³ A/W and an external quantum efficiency (EQE) of over 5.48 × 10⁵% toward the 532 nm regime. Importantly, the MoO₃ shell can provide excellent surface passivation to the CsPbBr₃ NW core that minimizes the diffusion of detrimental water and oxygen molecules, improving the air stability of CsPbBr₃/MoO₃ core-shell NW devices. All these findings evidently demonstrate the surface doping as an enabling technology to realize high-mobility and air-stable low-dimensional halide perovskite devices.

The correlation between phase transition and photoluminescence properties of CsPbX3 (X= Cl, Br, I) perovskite nanocrystals

We report a correlation between the structural phase transition of CsPbX₃ (X=Cl, Br, I) nanocrystals (NCs) and their temperature dependent steady-state photoluminescence (PL) and time-resolved PL (TRPL). In constrast to CsPbBr₃ and CsPbI₃ NCs which exhibited a continuous blue shift in their bandgap with increasing temperature, the CsPbCl₃ exhibited a blue shift until ~193 K, followed by a red shift until room temperature. We attribute this change from a blue to a red shift to a structural phase transtion in CsPbCl₃, which also manifested in the temperature dependent TRPL. Notably, the exciton recombination lifetimes showed a similar reverse trend due to the phase transition in CsPbCl₃, which has not been reported previously.

Reducing current fluctuation of Cs3Bi2Br9 perovskite photodetectors for diffuse reflection imaging with wide dynamic range

Recently, the newly booming metal halide perovskites have attracted extensive attention worldwide due to their outstanding optoelectronic performance, and are expected to be ideal candidates for photodetectors (PDs). However, there is still lack of perovskite PDs-based imaging devices coming into commercialization stage, due to some practical reasons including toxicity brought by lead-based perovskites and the large light current fluctuations. In this paper, for the first time we fabricate a lead-free Cs₃Bi₂Br₉ perovskite PD, and build a prototype of this perovskite PD-based imaging system with diffuse reflection imaging mode. Moreover, we propose a new parameter F related to light current fluctuation to evaluate imaging performance of a PD especially for weak diffuse light condition, and prove its usability by comparison of unoptimized lead-free Cs₃Bi₂Br₉ perovskite PD and atomic layer deposition (ALD) optimized Cs₃Bi₂Br₉ PD. ALD-optimization can improve the quality of perovskite film and suppress the dark current and current fluctuation. Finally, we obtain satisfactory diffuse reflection images of 2D and 3D objects with wide dynamic range. Therefore, the ALD-optimized Cs₃Bi₂Br₉ PD has addressed two major concerns about perovskite PDs-based imaging devices, that may extend application of perovskite materials and improve imaging quality.

Perovskite-Gallium Phosphide Platform for Reconfigurable Visible-Light Nanophotonic Chip

Reduction of the wavelength in on-chip light circuitry is critically important not only for the sake of keeping up with Moore's law for photonics but also for reaching toward the spectral ranges of operation of emerging materials, such as atomically thin semiconductors, vacancy-based single-photon emitters, and quantum dots. This requires efficient and tunable light sources as well as compatible waveguide networks. For the first challenge, halide perovskites are prospective materials that enable cost-efficient fabrication of micro- and nanolasers. On the other hand, III-V semiconductor nanowires are optimal for guiding of visible light as they exhibit a high refractive index as well as excellent shape and crystalline quality beneficial for strong light confinement and long-range waveguiding. Here, we develop an integrated platform for visible light that comprises gallium phosphide (GaP) nanowires directly embedded into compact CsPbBr₃-based light sources. In our devices, perovskite microcrystals support stable room-temperature lasing and broadband chemical tuning of the emission wavelength in the range of 530-680 nm, whereas GaP nanowaveguides support efficient outcoupling of light, its subwavelength (<200 nm) confinement, and long-range guiding over distances more than 20 μm. As a highlight of our approach, we demonstrate sequential transfer and conversion of light using an intermediate perovskite nanoparticle in a chain of GaP nanowaveguides.

Random lasing in cesium lead iodide (CsPbI3) thin films with no surface passivation

We report the CsPbI₃ random lasing at room temperature fabricated by a chemical deposition method. The CsPbI₃ thin films with high crystalline quality have intense PL emission and easily achieve the lasing behavior with the Q-factor value over 7000. The lasing behavior of CsPbI₃ thin films can be classified as random lasing by measuring lasing spectra at different collective angles. The fast Fourier transform analysis of the lasing spectra is employed to determine the effective cavity length. Most important of all, the lasing stability investigation shows the prolonged lasing stability over 4.8 X 10⁵ laser shots in air.

Wavelength-Tunable Interlayer Exciton Emission at the Near-Infrared Region in van der Waals Semiconductor Heterostructures

The wavelength-tunable interlayer exciton (IE) from layered semiconductor materials has not been achieved. van der Waals heterobilayers constructed using single-layer transition metal dichalcogenides can produce continuously changed interlayer band gaps, which is a feasible approach to achieve tunable IEs. In this work, we design a series of van der Waals heterostructures composed of a WSe₂ layer with a fixed band gap and another WS_2(1-x)Se_2x alloy layer with continuously changed band gaps. The existence of IEs and tunable interlayer band gaps in these heterobilayers is verified by steady-state photoluminescence experiments. By tuning the composition of the WS_2(1-x)Se_2x alloy layers, we realized a very wide tunable band gap range of 1.97-1.40 eV with a wavelength-tunable IE emission range of 1.52-1.40 eV from the heterobilayers. The time-resolved photoluminescence experiments show the IE emission lifetimes over nanoseconds.

Controllable Growth of High-Quality Inorganic Perovskite Microplate Arrays for Functional Optoelectronics

Inorganic perovskite single crystals have emerged as promising vapor-phase processable structures for optoelectronic devices. However, because of material lattice mismatch and uncontrolled nucleation, vapor-phase methods have been restricted to random distribution of single crystals that are difficult to perform for integrated device arrays. Herein, an effective strategy to control the vapor-phase growth of high-quality cesium lead bromide perovskite (CsPbBr₃ ) microplate arrays with uniform morphology as well as controlled location and size is reported. By introducing perovskite seeds on substrates, intractable lattice mismatches and random nucleation barriers are surpassed, and the epitaxial growth of perovskite crystals is accurately controlled. It is further demonstrated that CsPbBr₃ microplate arrays can be monolithically integrated on substrates for the fabrication of high-performance lasers and photodetectors. This strategy provides a facile approach to fabricate high-quality CsPbBr₃ microplates with controllable size and location, which offers new opportunities for the scalable production of integrated optoelectronic devices.

Inverse Growth of Large-Grain-Size and Stable Inorganic Perovskite Micronanowire Photodetectors

Control of forward and inverse reactions between perovskites and precursor materials is key to attaining high-quality perovskite materials. Many techniques focus on synthesizing nanostructured CsPbX₃ materials (e.g., nanowires) via a forward reaction (CsX + PbX₂ → CsPbX₃). However, low solubility of inorganic perovskites and complex phase transition make it difficult to realize the precise control of composition and length of nanowires using the conventional forward approach. Herein, we report the self-assembly inverse growth of CsPbBr₃ micronanowires (MWs) (CsPb₂Br₅ → CsPbBr₃ + PbBr₂↑) by controlling phase transition from CsPb₂Br₅ to CsPbBr₃. The two-dimensional (2D) structure of CsPb₂Br₅ serves as nucleation sites to induce initial CsPbBr₃ MW growth. Also, phase transition allows crystal rearrangement and slows down crystal growth, which facilitates the MW growth of CsPbBr₃ crystals along the 2D planes of CsPb₂Br₅. A CsPbBr₃ MW photodetector constructed based on the inverse growth shows a high responsivity of 6.44 A W^-1 and detectivity of ∼10¹² Jones. Large grain size, high crystallinity, and large thickness can effectively alleviate decomposition/degradation of perovskites, which leads to storage stability for over 60 days in humid environment (relative humidity = 45%) and operational stability for over 3000 min under illumination (wavelength = 400 nm, light intensity = 20.06 mW cm^-2).

An Electrically Controlled Wavelength-Tunable Nanoribbon Laser

Nanoscale laser sources with downscaled device footprint, high energy efficiency, and high operation speed are pivotal for a wide array of optoelectronic and nanophotonic applications ranging from on-chip interconnects, nanospectroscopy, and sensing to optical communication. The capability of on-demand lasing output with reversible and continuous wavelength tunability over a broad spectral range enables key functionalities in wavelength-division multiplexing and finely controlled light-matter interaction, which remains an important subject under intense research. In this study, we demonstrate an electrically controlled wavelength-tunable laser based on a CdS nanoribbon (NR) structure. Typical "S"-shaped characteristics of pump power dependence were observed for dominant lasing lines, with concomitant line width narrowing. By applying an increased bias voltage across the NR device, the lasing resonance exhibits a continuous tuning from 510 to 520 nm for a bias field in the range 0-15.4 kV/cm. Systematic bias-dependent absorption and time-resolved photoluminescence (PL) measurements were performed, revealing a red-shifted band edge of gain medium and prolonged PL lifetime with increased electric field over the device. Both current-induced thermal reduction of the band gap and the Franz-Keldysh effect were identified to account for the modification of the lasing profile, with the former factor playing the leading role. Furthermore, dynamical switching of NR lasing was successfully demonstrated, yielding a modulation ratio up to ∼21 dB. The electrically tuned wavelength-reversible CdS NR laser in this work, therefore, presents an important step toward color-selective coherent emitters for future chip-based nanophotonic and optoelectronic circuitry.

Photoinduced charge carrier dynamics in a ZnSe quantum dot-attached CdTe system

A new nanohybrid material is prepared by attaching CdTe nanoneedles (NNs) to surface-modified ZnSe quantum dots (QDs). The NNs and QDs are prepared by a colloidal synthesis method in an aqueous alkaline medium. The surface modification and the attachment of nanostructures are achieved by a bifunctional ligand 3-mercaptopropionic acid (3-MPA). The band gap of the ZnSe QDs is varied by controlling the size of the QDs in order to get the maximum overlap between the absorption band of the CdTe NNs and the emission band of the ZnSe QDs, which is a prerequisite for effective charge/energy transfer. The possibility of photoinduced charge transfer (PCT) and Förster resonance energy transfer (FRET) from the donor (QDs) to the acceptor (NNs) has been assessed. Very fast (less than 800 ps) PCT and FRET from QDs to NNs occur because the emission band of QDs overlaps with the absorption band of NNs. The calculated large value of the overlapping integral, J(λ) ∼4.5 × 10¹⁹M^-1cm^-1nm⁴, of the donor and the acceptor bands proves the feasibility of energy transfer. These findings suggest that the ZnSe QDs can exchange photoinduced energy with the CdTe NNs effectively over a wide distance in a CdTe-ZnSe nanohybrid.

Large lattice distortions and size-dependent bandgap modulation in epitaxial halide perovskite nanowires

Metal-halide perovskites have been shown to be remarkable and promising optoelectronic materials. However, despite ongoing research from multiple perspectives, some fundamental questions regarding their optoelectronic properties remain controversial. One reason is the high-variance of data collected from, often unstable, polycrystalline thin films. Here we use ordered arrays of stable, single-crystal cesium lead bromide (CsPbBr₃) nanowires grown by surface-guided chemical vapor deposition to study fundamental properties of these semiconductors in a one-dimensional model system. Specifically, we uncover the origin of an unusually large size-dependent luminescence emission spectral blue-shift. Using multiple spatially resolved spectroscopy techniques, we establish that bandgap modulation causes the emission shift, and by correlation with state-of-the-art electron microscopy methods, we reveal its origin in substantial and uniform lattice rotations due to heteroepitaxial strain and lattice relaxation. Understanding strain and its effect on the optoelectronic properties of these dynamic materials, from the atomic scale up, is essential to evaluate their performance limits and fundamentals of charge carrier dynamics.

A microwave-assisted template-free route for large-scale synthesis of photoluminescent single crystal CsPbI3 nanotubes

High-quality single crystalline CsPbI₃ nanotubes featuring highly uniform sizes and stable and bright photoluminescence were synthesized through a microwave-assisted synthetic approach.

Materials chemistry and engineering in metal halide perovskite lasers

The invention and development of the laser have revolutionized science, technology, and industry. Metal halide perovskites are an emerging class of semiconductors holding promising potential in further advancing the laser technology. In this Review, we provide a comprehensive overview of metal halide perovskite lasers from the viewpoint of materials chemistry and engineering. After an introduction to the materials chemistry and physics of metal halide perovskites, we present diverse optical cavities for perovskite lasers. We then comprehensively discuss various perovskite lasers with particular functionalities, including tunable lasers, multicolor lasers, continuous-wave lasers, single-mode lasers, subwavelength lasers, random lasers, polariton lasers, and laser arrays. Following this a description of the strategies for improving the stability and reducing the toxicity of metal halide perovskite lasers is provided. Finally, future research directions and challenges toward practical technology applications of perovskite lasers are provided to give an outlook on this emerging field.

Synthesis, optoelectronic properties and applications of halide perovskites

Halide perovskites have emerged as a class of most promising and cost-effective semiconductor materials for next generation photoluminescent, electroluminescent and photovoltaic devices.

Kinetics and mechanism of planar nanowire growth

Surface-guided growth of planar nanowires offers the possibility to control their position, direction, length, and crystallographic orientation and to enable their large-scale integration into practical devices. However, understanding of and control over planar nanowire growth are still limited. Here, we study theoretically and experimentally the growth kinetics of surface-guided planar nanowires. We present a model that considers different kinetic pathways of material transport into the planar nanowires. Two limiting regimes are established by the Gibbs-Thomson effect for thinner nanowires and by surface diffusion for thicker nanowires. By fitting the experimental data for the length-diameter dependence to the kinetic model, we determine the power exponent, which represents the dimensionality of surface diffusion, and results to be different for planar vs. nonplanar nanowires. Excellent correlation between the model predictions and the data is obtained for surface-guided Au-catalyzed ZnSe and ZnS nanowires growing on both flat and faceted sapphire surfaces. These data are compared with those of nonplanar nanowire growth under similar conditions. The results indicate that, whereas nonplanar growth is usually dominated by surface diffusion of precursor adatoms over the nanowire walls, planar growth is dominated by surface diffusion over the substrate. This mechanism of planar nanowire growth can be extended to a broad range of material-substrate combinations for higher control toward large-scale integration into practical devices.

All-inorganic perovskite CsPbBr3 microstructures growth via chemical vapor deposition for high-performance photodetectors

Perovskite cesium lead halide (CsPbBr₃) has attracted considerable attention due to its excellent optoelectronic properties and superior stability against moisture, oxygen, light, and heat. In this work, the micro-environment controlled chemical vapor deposition (CVD) method has been adopted to synthesize high-quality single-crystalline CsPbBr₃ microstructures, including microwires, microplates and triangular pyramids. Moreover, the structure-activity relationship between the material microstructures and the device properties is illustrated. The results show that photodetectors based on a single horizontal CsPbBr₃ microwire exhibit a high responsivity (312.2 A W^-1) and a fast response time of 5.8 ms. Photodetectors based on a single CsPbBr₃ microplate exhibit a responsivity of 1.74 A W^-1 and a response of 10 ms. These results indicate that the CsPbBr₃ microwire photodetector is characterized by a higher photodetector performance when compared to the microplate due to its excellent crystallization quality and the Fabry-Pérot cavity effect in the microwire. Furthermore, the flexible CsPbBr₃ microwire photodetector was demonstrated on a mica substrate. The results show that the photocurrent can be maintained at 90% after 3000 cycles at a bending radius of 2.5 mm. This work demonstrates the structure-activity photodetector performance, which is essential to develop a full understanding about high-performance optoelectronic devices based on all-inorganic lead halide perovskite materials.

Temperature-Dependent Lasing of CsPbI3 Triangular Pyramid

In this work, the lasing performance of a microsized single-crystal CsPbI₃ triangular pyramid (MSCTP) is evaluated by measuring the lasing threshold at low temperature. The MSCTPs of well-defined facets are synthesized on a Si/SiO₂ substrate with chemical vapor deposition. The MSCTP shows a spontaneous emission around 719 nm at room temperature and a stimulated emission resonant in a single Fabry-Perot mode within 148-223 K. The lasing threshold varies from 21.56 to 53.15 μJ/cm² and presents a temperature dependence in an empirical exponential function with a characteristic temperature of 72.73 K. The temperature dependence of lasing behavior is ascribed to the competition between the exciton binding energy and thermal disturbance energy of CsPbI₃. The results of this work provide us a perspective to engineer and optimize optoelectrical devices based on perovskite materials and a microsized optical cavity to investigate the light-matter interaction in quantum optics.