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Huang Y, Lv S, Liu H, Cheng Q, Biao Y, Lu H, Lin X, Wang Z, Yang H, Chen H, Weng YX. Observation of photoinduced polarons in semimetal 1T-TiSe 2. NANOTECHNOLOGY 2023; 34:235707. [PMID: 36877995 DOI: 10.1088/1361-6528/acc188] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/08/2022] [Accepted: 03/05/2023] [Indexed: 06/18/2023]
Abstract
In this work, ultrafast carrier dynamics of mechanically exfoliated 1T-TiSe2flakes from the high-quality single crystals with self-intercalated Ti atoms are investigated by femtosecond transient absorption spectroscopy. The observed coherent acoustic and optical phonon oscillations after ultrafast photoexcitation reveal the strong electron-phonon coupling in 1T-TiSe2. The ultrafast carrier dynamics probed in both visible and mid-infrared regions indicate that some photogenerated carriers localize near the intercalated Ti atoms and form small polarons rapidly within several picoseconds after photoexcitation due to the strong and short-range electron-phonon coupling. The formation of polarons leads to a reduction of carrier mobility and a long-time relaxation process of photoexcited carriers for several nanoseconds. The formation and dissociation rates of the photoinduced polarons are dependent on both the pump fluence and the thickness of TiSe2sample. This work offers new insights into the photogenerated carrier dynamics of 1T-TiSe2, and emphasizes the effects of intercalated atoms on the electron and lattice dynamics after photoexcitation.
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Affiliation(s)
- Yin Huang
- Beijing National Center for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Senhao Lv
- Beijing National Center for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Heyuan Liu
- Beijing National Center for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Qiuzhen Cheng
- Beijing National Center for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Yi Biao
- Beijing National Center for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Hongliang Lu
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Xiao Lin
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Zhuan Wang
- Beijing National Center for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Haitao Yang
- Beijing National Center for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, People's Republic of China
| | - Hailong Chen
- Beijing National Center for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, People's Republic of China
| | - Yu-Xiang Weng
- Beijing National Center for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, People's Republic of China
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2
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Naik S, Sarangi SN, Samal D, Samal SL. Effect of an inner-transition metal (Dy) intercalation on the structure and magnetic properties of 1T–TiSe2. J SOLID STATE CHEM 2023. [DOI: 10.1016/j.jssc.2022.123782] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
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3
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Yun SJ, Choi SH, Kim JW, Yoon D, Cho BW, Won YS, Kim JW, Lee J, Kim YI, Kim YM, Kirubasankar B, Kim SM, Kim KK, Lee YH. Internal Thermal Stress-Driven Phase Transformation in Van der Waals Layered Materials. ACS NANO 2022; 16:17033-17040. [PMID: 36173357 DOI: 10.1021/acsnano.2c07150] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
High pressure or strain is an effective strategy for generating phase transformations in van der Waals (vdW) layered materials without introducing defects, but this approach remains difficult to perform consistently. We present a scalable and facile method for achieving phase transformation in vdW materials, wherein solid vdW materials are subject to internal thermal stress within a molten metal mantle as it undergoes cooling. This internal thermal stress is principally the product of differential thermal expansion between mantle and core and can be tuned by the mantle material and temperature conditions. We validated this approach by achieving phase transformation of red phosphorus to black phosphorus, and metallic 1T'- to semiconducting 2H-MoTe2 crystals. We further demonstrate quantum electronic phase transformation of suppressed charge density wave in TiSe2 by means of electron-phonon coupling using the same system.
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Affiliation(s)
- Seok Joon Yun
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Soo Ho Choi
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Ji-Won Kim
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Duhee Yoon
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Byeong Wook Cho
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Yo Seob Won
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Jae Woo Kim
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Jina Lee
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Yong In Kim
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Young-Min Kim
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | | | - Soo Min Kim
- Department of Chemistry, Sookmyung Women's University, Seoul 14072, Republic of Korea
| | - Ki Kang Kim
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
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4
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Chowdhury S, Rigosi AF, Hill HM, Briggs A, Newell DB, Berger H, Hight Walker AR, Tavazza F. Influence of Dimensionality on the Charge Density Wave Phase of 2H‐TaSe
2. ADVANCED THEORY AND SIMULATIONS 2022. [DOI: 10.1002/adts.202100329] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Sugata Chowdhury
- Department of Physics and Astronomy Howard University Washington DC 20059 USA
| | - Albert F. Rigosi
- National Institute of Standards and Technology Gaithersburg MD 20899 USA
| | - Heather M. Hill
- National Institute of Standards and Technology Gaithersburg MD 20899 USA
| | - Andrew Briggs
- National Institute of Standards and Technology Gaithersburg MD 20899 USA
| | - David B. Newell
- National Institute of Standards and Technology Gaithersburg MD 20899 USA
| | - Helmuth Berger
- École Polytechnique Fédérale de Lausanne (EPFL) Institut de Physique des Nanostructures Lausanne CH‐1015 Switzerland
| | | | - Francesca Tavazza
- National Institute of Standards and Technology Gaithersburg MD 20899 USA
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5
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Huang Z, Song X, Chen Y, Yang H, Yuan P, Ma H, Qiao J, Zhang Y, Sun J, Zhang T, Huang Y, Liu L, Gao HJ, Wang Y. Size Dependence of Charge-Density-Wave Orders in Single-Layer NbSe 2 Hetero/Homophase Junctions. J Phys Chem Lett 2022; 13:1901-1907. [PMID: 35179388 DOI: 10.1021/acs.jpclett.1c04138] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Controlling charge-density-wave (CDW) orders in two-dimensional (2D) crystals has attracted a great deal of interest because of their fundamental physics and their demand inse in miniaturized devices. In this work, we systematically studied the size-dependent CDW orders in single-layer hetero/homo-NbSe2 stacking junctions. We found that the CDW orders in the top 1T-NbSe2 layer of the junctions are highly dependent on its lateral size. For the 1T/2H-NbSe2 heterojunction, the critical lateral size of 1T-NbSe2 islands for the formation of well-defined CDW orders is ∼26 nm, whereas below 15 nm, the CDW orders melt. However, for the 1T/1T-NbSe2 homojunction, the CDW orders in the islands can persist even with a lateral size of <11 nm. Our findings illuminate the fresh phenomenon of size-dependent CDW orders existing in 2D van der Waals hetero/homojunctions and provide useful information for the control of CDW orders.
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Affiliation(s)
- Zeping Huang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Xuan Song
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Yaoyao Chen
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Han Yang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Peiwen Yuan
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Hang Ma
- School of Automation, Beijing Information Science and Technology University, Beijing 100085, China
| | - Jingsi Qiao
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
- Centre for Advanced 2D Materials, National University of Singapore, 117546 Singapore
| | - Yu Zhang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Jiatao Sun
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Teng Zhang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Yuan Huang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Liwei Liu
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Hong-Jun Gao
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Yeliang Wang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
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6
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Peng X, Zhang X, Dong X, Ma D, Chen D, Li Y, Li J, Han J, Wang Z, Liu CC, Zhou J, Xiao W, Yao Y. Observation of Topological Edge States on α-Bi 4Br 4 Nanowires Grown on TiSe 2 Substrates. J Phys Chem Lett 2021; 12:10465-10471. [PMID: 34672593 DOI: 10.1021/acs.jpclett.1c02586] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
A time-reversal invariant two-dimensional (2D) topological insulator (TI) is characterized by the gapless helical edge states propagating along the perimeter of the system. However, the small band gap in the 2D TIs discovered so far hinders their applications. Recently, we predicted that single-layer Bi4Br4 is a 2D TI with a remarkable band gap and that α-Bi4Br4 crystals can host topological edge states at the step edges. Here we report the growth of α-Bi4Br4 nanowires with (102)-oriented top surfaces on the TiSe2 substrates and the direct observation of the predicted topological edge states at the step edges of the nanowires using scanning tunneling microscopy. The coupling between the edge states leads to the formation of surface states at the (102) top surfaces of the nanowires. Our work demonstrates the existence of topological edge states in α-Bi4Br4 and paves the way for developing α-Bi4Br4-based devices for a high-temperature quantum spin Hall effect.
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Affiliation(s)
- Xianglin Peng
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Xu Zhang
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Xu Dong
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Dashuai Ma
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Dongyun Chen
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Yongkai Li
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Ji Li
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Junfeng Han
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, China
| | - Zhiwei Wang
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, China
| | - Cheng-Cheng Liu
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, China
| | - Jinjian Zhou
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, China
| | - Wende Xiao
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, China
| | - Yugui Yao
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, China
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7
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Saqib H, Rahman S, Zhao Y, Cazorla C, Errandonea D, Susilo R, Zhuang Y, Huang Y, Chen B, Dai N. Evolution of Structural and Electronic Properties of TiSe 2 under High Pressure. J Phys Chem Lett 2021; 12:9859-9867. [PMID: 34606285 DOI: 10.1021/acs.jpclett.1c02492] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
A pressure-induced structural phase transition and its intimate link with the superconducting transition was studied for the first time in TiSe2 up to 40 GPa at room temperature using X-ray diffraction, transport measurement, and first-principles calculations. We demonstrate the occurrence of a first-order structural phase transition at 4 GPa from the standard trigonal structure (S.G.P3̅m1) to another trigonal structure (S-G-P3̅c1). Additionally, at 16 GPa, the P3̅c1 phase spontaneously transforms into a monoclinic C2/m phase, and above 24 GPa, the C2/m phase returns to the initial P3̅m1 phase. Electrical transport results show that metallization occurs above 6 GPa. The charge density wave observed at ambient pressure is suppressed upon compression up to 2 GPa with the emergence of superconductivity at 2.5 GPa, with a critical temperature (Tc) of 2 K. A structural transition accompanies the emergence of superconductivity that persists up to 4 GPa. The results demonstrate that the pressure-induced phase transitions explored by the experiments along with the theoretical predictions may open the door to a new path for searching and controlling the phase diagrams of transition metal dichalcogenides.
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Affiliation(s)
- H Saqib
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
- Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 201800, China
| | - S Rahman
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
- School of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, UCAS, Hangzhou 310024, China
| | - Yongsheng Zhao
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - C Cazorla
- Departament de Física, Universitat Politècnica de Catalunya, Campus Nord B4-B5, Barcelona 08034, Spain
| | - D Errandonea
- Departamento de Física Aplicada-ICMUV, MALTA Consolider Team, Universidad de Valencia, Edificio de Investigación, C/Dr. Moliner 50, Burjassot, Valencia 46100, Spain
| | - Resta Susilo
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Yukai Zhuang
- Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, China
| | - Yanwei Huang
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200062, China
| | - Bin Chen
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Ning Dai
- Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 201800, China
- School of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, UCAS, Hangzhou 310024, China
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8
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Duo Y, Luo G, Li Z, Chen Z, Li X, Jiang Z, Yu B, Huang H, Sun Z, Yu XF. Photothermal and Enhanced Photocatalytic Therapies Conduce to Synergistic Anticancer Phototherapy with Biodegradable Titanium Diselenide Nanosheets. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2103239. [PMID: 34486220 DOI: 10.1002/smll.202103239] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/03/2021] [Revised: 07/17/2021] [Indexed: 06/13/2023]
Abstract
Nanomaterial-based photothermal and photocatalytic therapies are effective against various types of cancers. However, combining two or more materials is considered necessary to achieve the synergistic anticancer effects of photothermal and photocatalytic therapy, which made the preparation process complicated. Herein, the authors describe simple 2D titanium diselenide (TiSe2 ) nanosheets (NSs) that can couple photothermal therapy with photocatalytic therapy. The TiSe2 NSs are prepared using a liquid exfoliation method. They show a layered structure and possess high photothermal conversion efficiency (65.58%) and good biocompatibility. Notably, upon near-infrared irradiation, these NSs exhibit good photocatalytic properties with enhanced reactive oxygen species generation and H2 O2 decomposition in vitro. They can also achieve high temperatures, with heat improving their catalytic ability to further amplify oxidative stress and glutathione depletion in cancer cells. Furthermore, molecular mechanism studies reveal that the synergistic effects of photothermal and enhanced photocatalytic therapy can simultaneously lead to apoptosis and necrosis in cancer cells via the HSP90/JAK3/NF-κB/IKB-α/Caspase-3 pathway. Systemic exploration reveals that the TiSe2 NSs has an appreciable degradation rate and accumulates passively in tumor tissue, where they facilitate photothermal and photocatalytic effects without obvious toxicity. Their study thus indicates the high potential of biodegradable TiSe2 NSs in synergistic phototherapy for cancer treatment.
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Affiliation(s)
- Yanhong Duo
- Department of Radiation Oncology The Second Clinical Medical College, Jinan University (Shenzhen People's Hospital), Shenzhen, 518020, China
- Integrated Chinese and Western Medicine Postdoctoral Research Station, Jinan University, Guangzhou, 510632, China
| | - Guanghong Luo
- Department of Radiation Oncology The Second Clinical Medical College, Jinan University (Shenzhen People's Hospital), Shenzhen, 518020, China
- Integrated Chinese and Western Medicine Postdoctoral Research Station, Jinan University, Guangzhou, 510632, China
- Materials and Interfaces Center, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China
| | - Zihuang Li
- Department of Radiation Oncology The Second Clinical Medical College, Jinan University (Shenzhen People's Hospital), Shenzhen, 518020, China
- Integrated Chinese and Western Medicine Postdoctoral Research Station, Jinan University, Guangzhou, 510632, China
| | - Zide Chen
- Department of Radiation Oncology The Second Clinical Medical College, Jinan University (Shenzhen People's Hospital), Shenzhen, 518020, China
- Integrated Chinese and Western Medicine Postdoctoral Research Station, Jinan University, Guangzhou, 510632, China
| | - Xianming Li
- Department of Radiation Oncology The Second Clinical Medical College, Jinan University (Shenzhen People's Hospital), Shenzhen, 518020, China
- Integrated Chinese and Western Medicine Postdoctoral Research Station, Jinan University, Guangzhou, 510632, China
| | - Zhenyou Jiang
- Department of Radiation Oncology The Second Clinical Medical College, Jinan University (Shenzhen People's Hospital), Shenzhen, 518020, China
- Integrated Chinese and Western Medicine Postdoctoral Research Station, Jinan University, Guangzhou, 510632, China
- Department of Microbiology and Immunology, College of Basic Medicine and Public Hygiene, Jinan University, Guangzhou, 510632, China
| | - Binlu Yu
- Materials and Interfaces Center, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China
| | - Hao Huang
- Materials and Interfaces Center, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China
| | - Zhengbo Sun
- Materials and Interfaces Center, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China
| | - Xue-Feng Yu
- Materials and Interfaces Center, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China
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9
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Kumar A, Sharma R, Yadav S, Swami SK, Kumari R, Singh VN, Ojha S, Schneider JJ, Srivastava R, Sinha OP. A study on chemical exfoliation and structural and optical properties of two-dimensional layered titanium diselenide. Dalton Trans 2021; 50:3894-3903. [PMID: 33635300 DOI: 10.1039/d0dt03689g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Titanium diselenide (TiSe2) is the least studied member of the transition metal dichalcogenide family due to a lack of available synthesis methodology, controlled bandgap engineering, and rapid characterization of layers. In this paper, we report the chemical exfoliation of TiSe2 platelets synthesized by the chemical vapor transport route in ortho-dichlorobenzene (o-DCB) functionalized with oleylamine (OLA), for the first time to the best of our knowledge. It is found that the addition of OLA supports the formation of a stable dispersion of a large area of the TiSe2 sheets due to surface capping with the OLA molecules indicating the importance of the ligand in dispersion behavior. The X-ray diffraction pattern confirms the hexagonal structure of the TiSe2 platelets with the space group P3[combining macron]m1 while Raman spectroscopy reveals that two modes of vibration i.e. A1g and E2g exist with layered structures having dimensions in micrometers as confirmed by scanning electron microscopy. Fourier transform infrared spectroscopy confirms the successful functionalization of chemically exfoliated TiSe2 nanosheets. Field-emission scanning electron microscopy reveals that exfoliated TiSe2 has a thickness of 15-55 nm whereas high-resolution transmission electron microscopy indicates thicker sheets for ligand-free exfoliated TiSe2 which are crystalline. Atomic force microscopy confirms the formation of nanosheets. UV-Visible, photoluminescence, and time-resolved PL spectroscopy showed an enhanced effect and better average lifetime of excitation for the exfoliated sheets with OLA than those without OLA. The C-V studies reveal that with increasing scan rate, the corresponding current also increases. The present study offers the possibility of their utilization in optoelectronics, advanced low-power electronics, voltage-controlled oscillators, ultra-fast electronics, and electrochemical devices.
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Affiliation(s)
- Ashish Kumar
- CSIR-National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi, India.
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10
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Bianco R, Monacelli L, Calandra M, Mauri F, Errea I. Weak Dimensionality Dependence and Dominant Role of Ionic Fluctuations in the Charge-Density-Wave Transition of NbSe_{2}. PHYSICAL REVIEW LETTERS 2020; 125:106101. [PMID: 32955304 DOI: 10.1103/physrevlett.125.106101] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/17/2020] [Accepted: 07/30/2020] [Indexed: 06/11/2023]
Abstract
Contradictory experiments have been reported about the dimensionality effect on the charge-density-wave transition in 2H NbSe_{2}. While scanning tunneling experiments on single layers grown by molecular beam epitaxy measure a charge-density-wave transition temperature in the monolayer similar to the bulk, around 33 K, Raman experiments on exfoliated samples observe a large enhancement of the transition temperature up to 145 K. By employing a nonperturbative approach to deal with anharmonicity, we calculate from first principles the temperature dependence of the phonon spectra both for bulk and monolayer. In both cases, the charge-density-wave transition temperature is estimated as the temperature at which the phonon energy of the mode driving the structural instability vanishes. The obtained transition temperature in the bulk is around 59 K, in rather good agreement with experiments, and it is just slightly increased in the single-layer limit to 73 K, showing the weak dependence of the transition on dimensionality. Environmental factors could motivate the disagreement between the transition temperatures reported by experiments. Our analysis also demonstrates the predominance of ionic fluctuations over electronic ones in the melting of the charge-density-wave order.
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Affiliation(s)
- Raffaello Bianco
- Centro de Física de Materiales (CSIC-UPV/EHU), Manuel de Lardizabal pasealekua 5, 20018 Donostia/San Sebastián, Spain
| | - Lorenzo Monacelli
- Dipartimento di Fisica, Università di Roma Sapienza, Piazzale Aldo Moro 5, I-00185 Roma, Italy
- Graphene Labs, Fondazione Istituto Italiano di Tecnologia, Via Morego, I-16163 Genova, Italy
| | - Matteo Calandra
- Graphene Labs, Fondazione Istituto Italiano di Tecnologia, Via Morego, I-16163 Genova, Italy
- Dipartimento di Fisica, Università di Trento, Via Sommarive 14, 38123 Povo, Italy
- Sorbonne Université, CNRS, Institut des Nanosciences de Paris, UMR7588, F-75252 Paris, France
| | - Francesco Mauri
- Dipartimento di Fisica, Università di Roma Sapienza, Piazzale Aldo Moro 5, I-00185 Roma, Italy
- Graphene Labs, Fondazione Istituto Italiano di Tecnologia, Via Morego, I-16163 Genova, Italy
| | - Ion Errea
- Centro de Física de Materiales (CSIC-UPV/EHU), Manuel de Lardizabal pasealekua 5, 20018 Donostia/San Sebastián, Spain
- Fisika Aplikatua 1 Saila, Gipuzkoako Ingeniaritza Eskola, University of the Basque Country (UPV/EHU), Europa Plaza 1, 20018 Donostia/San Sebastián, Spain
- Donostia International Physics Center (DIPC), Manuel Lardizabal pasealekua 4, 20018 Donostia/San Sebastián, Spain
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11
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Lasek K, Coelho PM, Zberecki K, Xin Y, Kolekar SK, Li J, Batzill M. Molecular Beam Epitaxy of Transition Metal (Ti-, V-, and Cr-) Tellurides: From Monolayer Ditellurides to Multilayer Self-Intercalation Compounds. ACS NANO 2020; 14:8473-8484. [PMID: 32584543 DOI: 10.1021/acsnano.0c02712] [Citation(s) in RCA: 32] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2023]
Abstract
Material growth by van der Waals epitaxy has the potential to isolate monolayer (ML) materials and synthesize ultrathin films not easily prepared by exfoliation or other growth methods. Here, the synthesis of the early transition metal (Ti, V, and Cr) tellurides by molecular beam epitaxy (MBE) in the mono- to few-layer regime is investigated. The layered ditellurides of these materials are known for their intriguing quantum- and layer dependent- properties. Here we show by a combination of in situ sample characterization and comparison with computational predictions that ML ditellurides with octahedral 1T structure are readily grown, but for multilayers, the transition metal dichalcogenide (TMDC) formation competes with self-intercalated compounds. CrTe2, a TMDC that is known to be metastable in bulk and easily decomposes into intercalation compounds, has been synthesized successfully in the ML regime at low growth temperatures. At elevated growth temperatures or for multilayers, only the intercalation compound, equivalent to a bulk Cr3Te4, could be obtained. ML VTe2 is more stable and can be synthesized at higher growth temperatures in the ML regime, but multilayers also convert to a bulk-equivalent V3Te4 compound. TiTe2 is the most stable of the TMDCs studied; nevertheless, a detailed analysis of multilayers also indicates the presence of intercalated metals. Computation suggests that the intercalation-induced distortion of the TMDC-layers is much reduced in Ti-telluride compared to V-, and Cr-telluride. This makes the identification of intercalated materials by scanning tunneling microscopy more challenging for Ti-telluride. The identification of self-intercalation compounds in MBE grown multilayer chalcogenides may explain observed lattice distortions in previously reported MBE grown early transition metal chalcogenides. On the other hand, these intercalation compounds in their ultrathin limit can be considered van der Waals materials in their own right. This class of materials is only accessible by direct growth methods but may be used as "building blocks" in MBE-grown van der Waals heterostructures. Controlling their growth is an important step for understanding and studying the properties of these materials.
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Affiliation(s)
- Kinga Lasek
- Department of Physics, University of South Florida, Tampa, Florida 33620, United States
| | - Paula Mariel Coelho
- Department of Physics, University of South Florida, Tampa, Florida 33620, United States
| | - Krzysztof Zberecki
- Faculty of Physics, Warsaw University of Technology, ul. Koszykowa 75, 00-662 Warsaw, Poland
| | - Yan Xin
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310, United States
| | - Sadhu K Kolekar
- Department of Physics, University of South Florida, Tampa, Florida 33620, United States
| | - Jingfeng Li
- Department of Physics, University of South Florida, Tampa, Florida 33620, United States
| | - Matthias Batzill
- Department of Physics, University of South Florida, Tampa, Florida 33620, United States
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12
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Zhou JS, Monacelli L, Bianco R, Errea I, Mauri F, Calandra M. Anharmonicity and Doping Melt the Charge Density Wave in Single-Layer TiSe 2. NANO LETTERS 2020; 20:4809-4815. [PMID: 32496779 DOI: 10.1021/acs.nanolett.0c00597] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Low-dimensional systems with a vanishing band gap and a large electron-hole interaction have been proposed to be unstable toward exciton formation. As the exciton binding energy increases in low dimension, conventional wisdom suggests that excitonic insulators should be more stable in 2D than in 3D. Here we study the effects of the electron-hole interaction and anharmonicity in single-layer TiSe2. We find that, contrary to the bulk case and to the generally accepted picture, in single-layer TiSe2, the electron-hole exchange interaction is much smaller in 2D than in 3D and it has weak effects on phonon spectra. By calculating anharmonic phonon spectra within the stochastic self-consistent harmonic approximation, we obtain TCDW ≈ 440 K for an isolated and undoped single layer and TCDW ≈ 364 K for an electron-doping n = 4.6 × 1013 cm-2, close to the experimental result of 200-280 K on supported samples. Our work demonstrates that anharmonicity and doping melt the charge density wave in single-layer TiSe2.
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Affiliation(s)
- Jianqiang Sky Zhou
- Sorbonne Université, CNRS, Institut des Nanosciences de Paris, UMR7588, F-75252, Paris, France
| | - Lorenzo Monacelli
- Dipartimento di Fisica, Università di Roma Sapienza, Piazzale Aldo Moro 5, I-00185 Roma, Italy
| | - Raffaello Bianco
- Centro de Física de Materiales (CSIC-UPV/EHU), Manuel de Lardizabal pasealekua 5, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Ion Errea
- Fisika Aplikatua 1 Saila, Gipuzkoako Ingeniaritza Eskola, University of the Basque Country (UPV/EHU), Europa Plaza 1, 20018 Donostia-San Sebastián, Basque Country, Spain
- Centro de Física de Materiales (CSIC-UPV/EHU), Manuel de Lardizabal pasealekua 5, 20018 Donostia-San Sebastián, Basque Country, Spain
- Donostia International Physics Center (DIPC), Manuel de Lardizabal pasealekua 4, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Francesco Mauri
- Dipartimento di Fisica, Università di Roma La Sapienza, Piazzale Aldo Moro 5, I-00185 Roma, Italy
- Graphene Laboratories, Fondazione Istituto Italiano di Tecnologia, Via Morego, I-16163 Genova, Italy
| | - Matteo Calandra
- Sorbonne Université, CNRS, Institut des Nanosciences de Paris, UMR7588, F-75252, Paris, France
- Department of Physics, University of Trento, Via Sommarive 14, 38123 Povo, Italy
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13
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Zhang J, Lian C, Guan M, Ma W, Fu H, Guo H, Meng S. Photoexcitation Induced Quantum Dynamics of Charge Density Wave and Emergence of a Collective Mode in 1 T-TaS 2. NANO LETTERS 2019; 19:6027-6034. [PMID: 31416307 DOI: 10.1021/acs.nanolett.9b01865] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Photoexcitation is a powerful means in distinguishing different interactions and manipulating the states of matter, especially in charge density wave (CDW) materials. The CDW state of 1T-TaS2 has been widely studied experimentally mainly because of its intriguing laser-induced ultrafast responses of electronic and lattice subsystems. However, the microscopic atomic dynamics and underlying electronic mechanism upon photoexcitation remain unclear. Here, we demonstrate photoexcitation induced ultrafast dynamics of CDW in 1T-TaS2 using time-dependent density functional theory molecular dynamics. We discover a novel collective oscillation mode between the CDW state and a transient state induced by photodoping, which is significantly different from thermally induced phonon mode and attributed to the modification of the potential energy surface from laser excitation. In addition, our finding validates nonthermal melting of CDW induced at low light intensities, supporting that conventional hot electron model is inadequate to explain photoinduced dynamics. Our results provide a deep insight into the coherent electron and lattice quantum dynamics during the formation and excitation of CDW in 1T-TaS2.
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Affiliation(s)
- Jin Zhang
- Beijing National Laboratory for Condensed Matter Physics , Institute of Physics, Chinese Academy of Sciences , Beijing 100190 , P. R. China
- School of Physical Sciences , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
| | - Chao Lian
- Beijing National Laboratory for Condensed Matter Physics , Institute of Physics, Chinese Academy of Sciences , Beijing 100190 , P. R. China
| | - Mengxue Guan
- Beijing National Laboratory for Condensed Matter Physics , Institute of Physics, Chinese Academy of Sciences , Beijing 100190 , P. R. China
- School of Physical Sciences , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
| | - Wei Ma
- Beijing National Laboratory for Condensed Matter Physics , Institute of Physics, Chinese Academy of Sciences , Beijing 100190 , P. R. China
- School of Physical Sciences , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
| | - Huixia Fu
- Beijing National Laboratory for Condensed Matter Physics , Institute of Physics, Chinese Academy of Sciences , Beijing 100190 , P. R. China
- School of Physical Sciences , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
| | - Haizhong Guo
- School of Physics and Engineering , Zhengzhou University , Zhengzhou , Henan 450001 , P. R. China
| | - Sheng Meng
- Beijing National Laboratory for Condensed Matter Physics , Institute of Physics, Chinese Academy of Sciences , Beijing 100190 , P. R. China
- School of Physical Sciences , University of Chinese Academy of Sciences , Beijing 100049 , P. R. China
- Songshan Lake Materials Laboratory , Dongguan , Guangdong 523808 , P. R. China
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14
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Yan J, Xiao R, Luo X, Lv H, Zhang R, Sun Y, Tong P, Lu W, Song W, Zhu X, Sun Y. Strong Electron-Phonon Coupling in the Excitonic Insulator Ta 2NiSe 5. Inorg Chem 2019; 58:9036-9042. [PMID: 31246443 DOI: 10.1021/acs.inorgchem.9b00432] [Citation(s) in RCA: 21] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
An excitonic insulating (EI) state is a fantastic correlated electron phase in condensed matter physics, driven by screened electron-hole interaction. Ta2NiSe5 is an excitonic insulator with a critical temperature (TC) of 328 K. In the current study, temperature-dependent Raman spectroscopy is used to investigate the phonon vibrations in Ta2NiSe5. The following observations were made: (1) an abnormal blue shift around TC is observed, which originates from the monoclinic to orthorhombic structural phase transition; (2) the splitting of a mode and two new Raman modes at 147 and 235 cm-1 have been observed with the formation of an EI state. With the help of first-principles calculations and temperature-dependent X-ray diffraction (XRD) experiments, it is found that the TaSe6 octahedra are "frozen" and the NiSe4 tetrahedra are greatly distorted below TC. Thus, it seems that the distortion of NiSe4 tetrahedra plays an important role in the strong electron-phonon coupling (EPC) in Ta2NiSe5, while the strong EPC, coupled with electron-hole interaction, opens the energy gap to form the EI state in Ta2NiSe5.
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Affiliation(s)
- Jian Yan
- Key Laboratory of Materials Physics , Institute of Solid State Physics, Chinese Academy of Sciences , Hefei 230031 , People's Republic of China.,University of Science and Technology of China , Hefei 230026 , People's Republic of China
| | - Ruichun Xiao
- Key Laboratory of Materials Physics , Institute of Solid State Physics, Chinese Academy of Sciences , Hefei 230031 , People's Republic of China.,University of Science and Technology of China , Hefei 230026 , People's Republic of China
| | - Xuan Luo
- Key Laboratory of Materials Physics , Institute of Solid State Physics, Chinese Academy of Sciences , Hefei 230031 , People's Republic of China
| | - Hongyan Lv
- Key Laboratory of Materials Physics , Institute of Solid State Physics, Chinese Academy of Sciences , Hefei 230031 , People's Republic of China
| | - Ranran Zhang
- High Magnetic Field Laboratory , Chinese Academy of Sciences , Hefei 230031 , People's Republic of China
| | - Yan Sun
- Institute of Physical Science and Information Technology , Anhui University , Hefei 230601 , People's Republic of China
| | - Peng Tong
- Key Laboratory of Materials Physics , Institute of Solid State Physics, Chinese Academy of Sciences , Hefei 230031 , People's Republic of China
| | - Wenjian Lu
- Key Laboratory of Materials Physics , Institute of Solid State Physics, Chinese Academy of Sciences , Hefei 230031 , People's Republic of China
| | - Wenhai Song
- Key Laboratory of Materials Physics , Institute of Solid State Physics, Chinese Academy of Sciences , Hefei 230031 , People's Republic of China
| | - Xuebin Zhu
- Key Laboratory of Materials Physics , Institute of Solid State Physics, Chinese Academy of Sciences , Hefei 230031 , People's Republic of China
| | - Yuping Sun
- Key Laboratory of Materials Physics , Institute of Solid State Physics, Chinese Academy of Sciences , Hefei 230031 , People's Republic of China.,High Magnetic Field Laboratory , Chinese Academy of Sciences , Hefei 230031 , People's Republic of China.,Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 210093 , People's Republic of China
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15
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Ma X, Dai T, Dang S, Kang S, Chen X, Zhou W, Wang G, Li H, Hu P, He Z, Sun Y, Li D, Yu F, Zhou X, Chen H, Chen X, Wu S, Li S. Charge Density Wave Phase Transitions in Large-Scale Few-Layer 1T-VTe 2 Grown by Molecular Beam Epitaxy. ACS APPLIED MATERIALS & INTERFACES 2019; 11:10729-10735. [PMID: 30799597 DOI: 10.1021/acsami.8b21442] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Charge density wave (CDW) as a novel effect in two-dimensional transition metal dichalcogenides (TMDs) has obtained a rapid rise of interest for its physical nature and potential applications in oscillators and memory devices. Here, we report var der Waals epitaxial growth of centimeter-scale 1T-VTe2 thin films on mica by molecular beam epitaxy. The VTe2 thin films showed sudden resistance change at temperatures of 240 and 135 K, corresponding to two CDW phase transitions driven by temperature. Moreover, the phase transitions can be driven by an electric field due to local Joule heating, and the corresponding resistance states are nonvolatile and controllable, which could be applied to the memory device where the logic states can be switched by an electric field. The multistage CDW phase transitions in the VTe2 thin films could be contributed to electron-phonon coupling in the two-dimensional VTe2, which is supported by twice pronounced Raman blue shifts of the vibration modes associated with in-plane phonons at CDW phase transition temperature. The results open up a new platform for understanding the microscopic physical essence and electrical control of CDW phases of TMDs, expanding the functionalities of these materials for memory applications.
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Affiliation(s)
| | | | | | | | | | | | | | | | | | | | | | | | - Fengmei Yu
- Automation College , Zhongkai University of Agriculture and Engineering , Guangzhou 510225 , People's Republic of China
| | - Xiang Zhou
- School of Physics and Astronomy , Sun Yat-sen University , Zhuhai Campus, Zhuhai 519082 , People's Republic of China
| | | | - Xinman Chen
- Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-electronic Materials and Technology , South China Normal University , Guangzhou 510631 , China
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16
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Shi J, Chen X, Zhao L, Gong Y, Hong M, Huan Y, Zhang Z, Yang P, Li Y, Zhang Q, Zhang Q, Gu L, Chen H, Wang J, Deng S, Xu N, Zhang Y. Chemical Vapor Deposition Grown Wafer-Scale 2D Tantalum Diselenide with Robust Charge-Density-Wave Order. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1804616. [PMID: 30589471 DOI: 10.1002/adma.201804616] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/18/2018] [Revised: 08/21/2018] [Indexed: 06/09/2023]
Abstract
2D metallic transition metal dichalcogenides (MTMDCs) are benchmark systems for uncovering the dimensionality effect on fascinating quantum physics, such as charge-density-wave (CDW) order, unconventional superconductivity, and magnetism, etc. However, the scalable and thickness-tunable syntheses of such envisioned MTMDCs are still challenging. Meanwhile, the origin of CDW order at the 2D limit is controversial. Herein, the direct synthesis of wafer-scale uniform monolayer 2H-TaSe2 films and thickness-tunable flakes on Au foils by chemical vapor deposition is accomplished. Based on the thickness-tunable 2H-TaSe2, the robust periodic lattice distortions that relate to CDW orders by low-temperature transmission electron microscopy are directly visualized. Particularly, a phase diagram of the transition temperature from normal metallic to CDW phases with thickness by variable-temperature Raman characterizations is established. Intriguingly, dramatically enhanced transition temperature from bulk value ≈90 to ≈125 K is observed from monolayer 2H-TaSe2, which can be explained by the enhanced electron-phonon coupling mechanism. More importantly, an ultrahigh specific capacitance is also obtained for the as-grown TaSe2 on carbon cloth as supercapacitor electrodes. The results hereby open up novel avenues toward the large-scale preparation of high-quality MTMDCs, and shed light on their applications in exploring some fundamental issues.
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Affiliation(s)
- Jianping Shi
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, P. R. China
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, P. R. China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, P. R. China
| | - Xuexian Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Liyun Zhao
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, P. R. China
| | - Yue Gong
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Min Hong
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, P. R. China
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Yahuan Huan
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, P. R. China
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Zhepeng Zhang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, P. R. China
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Pengfei Yang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, P. R. China
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Yong Li
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Qing Zhang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, P. R. China
| | - Lin Gu
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, P. R. China
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Huanjun Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Jian Wang
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, P. R. China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, P. R. China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Shaozhi Deng
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Ningsheng Xu
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Yanfeng Zhang
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, P. R. China
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
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17
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Jurelo AR, Ribeiro RAP, de Lazaro SR, Monteiro JFHL. Structural, vibrational and electronic properties of the superconductor Cu xTiSe 2: theoretical and experimental insights. Phys Chem Chem Phys 2018; 20:27011-27018. [PMID: 30328859 DOI: 10.1039/c8cp04154g] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The crystal/electronic structure and vibrational properties of the CuxTiSe2 intercalation compounds were studied combining experimental and theoretical techniques. The Cu added into the TiSe2 matrix was characterized as an intercalant atom into van der Waals gaps from Raman spectroscopy analysis. Theoretical and experimental data indicate the Cu-intercalation effect on the crystalline structure as a local disorder affecting [TiSe6] clusters from SeSe layers, which results in a volume expansion. A significant charge transfer from Cu atoms to the host lattice results in a change from Ti4+ to Ti3+ species, narrowing the band-gap and increasing the superconductivity of the material.
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Affiliation(s)
- Alcione Roberto Jurelo
- Departamento de Física, Universidade Estadual de Ponta Grossa, Av. Gen. Carlos Cavalcanti 4748, 84.030-000, Ponta Grossa, Paraná, Brazil
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18
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Han GH, Duong DL, Keum DH, Yun SJ, Lee YH. van der Waals Metallic Transition Metal Dichalcogenides. Chem Rev 2018; 118:6297-6336. [PMID: 29957928 DOI: 10.1021/acs.chemrev.7b00618] [Citation(s) in RCA: 109] [Impact Index Per Article: 18.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/08/2023]
Abstract
Transition metal dichalcogenides are layered materials which are composed of transition metals and chalcogens of the group VIA in a 1:2 ratio. These layered materials have been extensively investigated over synthesis and optical and electrical properties for several decades. It can be insulators, semiconductors, or metals revealing all types of condensed matter properties from a magnetic lattice distorted to superconducting characteristics. Some of these also feature the topological manner. Instead of covering the semiconducting properties of transition metal dichalcogenides, which have been extensively revisited and reviewed elsewhere, here we present the structures of metallic transition metal dichalcogenides and their synthetic approaches for not only high-quality wafer-scale samples using conventional methods (e.g., chemical vapor transport, chemical vapor deposition) but also local small areas by a modification of the materials using Li intercalation, electron beam irradiation, light illumination, pressures, and strains. Some representative band structures of metallic transition metal dichalcogenides and their strong layer-dependence are reviewed and updated, both in theoretical calculations and experiments. In addition, we discuss the physical properties of metallic transition metal dichalcogenides such as periodic lattice distortion, magnetoresistance, superconductivity, topological insulator, and Weyl semimetal. Approaches to overcome current challenges related to these materials are also proposed.
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Affiliation(s)
- Gang Hee Han
- Center for Integrated Nanostructure Physics (CINAP) , Institute for Basic Science (IBS) , Suwon 16419 , Republic of Korea.,Department of Energy Science , Sungkyunkwan University , Suwon 16419 , Republic of Korea
| | - Dinh Loc Duong
- Center for Integrated Nanostructure Physics (CINAP) , Institute for Basic Science (IBS) , Suwon 16419 , Republic of Korea.,Department of Energy Science , Sungkyunkwan University , Suwon 16419 , Republic of Korea
| | - Dong Hoon Keum
- Center for Integrated Nanostructure Physics (CINAP) , Institute for Basic Science (IBS) , Suwon 16419 , Republic of Korea.,Department of Energy Science , Sungkyunkwan University , Suwon 16419 , Republic of Korea
| | - Seok Joon Yun
- Center for Integrated Nanostructure Physics (CINAP) , Institute for Basic Science (IBS) , Suwon 16419 , Republic of Korea.,Department of Energy Science , Sungkyunkwan University , Suwon 16419 , Republic of Korea
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics (CINAP) , Institute for Basic Science (IBS) , Suwon 16419 , Republic of Korea.,Department of Energy Science , Sungkyunkwan University , Suwon 16419 , Republic of Korea.,Department of Physics , Sungkyunkwan University , Suwon 16419 , Republic of Korea
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19
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Wang H, Chen Y, Duchamp M, Zeng Q, Wang X, Tsang SH, Li H, Jing L, Yu T, Teo EHT, Liu Z. Large-Area Atomic Layers of the Charge-Density-Wave Conductor TiSe 2. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:1704382. [PMID: 29318716 DOI: 10.1002/adma.201704382] [Citation(s) in RCA: 29] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/03/2017] [Revised: 11/20/2017] [Indexed: 06/07/2023]
Abstract
Layered transition metal (Ti, Ta, Nb, etc.) dichalcogenides are important prototypes for the study of the collective charge density wave (CDW). Reducing the system dimensionality is expected to lead to novel properties, as exemplified by the discovery of enhanced CDW order in ultrathin TiSe2 . However, the syntheses of monolayer and large-area 2D CDW conductors can currently only be achieved by molecular beam epitaxy under ultrahigh vacuum. This study reports the growth of monolayer crystals and up to 5 × 105 µm2 large films of the typical 2D CDW conductor-TiSe2 -by ambient-pressure chemical vapor deposition. Atomic resolution scanning transmission electron microscopy indicates the as-grown samples are highly crystalline 1T-phase TiSe2 . Variable-temperature Raman spectroscopy shows a CDW phase transition temperature of 212.5 K in few layer TiSe2 , indicative of high crystal quality. This work not only allows the exploration of many-body state of TiSe2 in 2D limit but also offers the possibility of utilizing large-area TiSe2 in ultrathin electronic devices.
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Affiliation(s)
- Hong Wang
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
- NOVITAS, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
- CNRS International NTU Thales Research Alliance (CINTRA), 50 Nanyang Drive, Singapore, 637553, Singapore
| | - Yu Chen
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Martial Duchamp
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Qingsheng Zeng
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Xuewen Wang
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Siu Hon Tsang
- Temasek Laboratories@NTU, Nanyang Technological University, Singapore, 637553, Singapore
| | - Hongling Li
- NOVITAS, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Lin Jing
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Ting Yu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Edwin Hang Tong Teo
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
- NOVITAS, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
- CNRS International NTU Thales Research Alliance (CINTRA), 50 Nanyang Drive, Singapore, 637553, Singapore
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
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20
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Hellgren M, Baima J, Bianco R, Calandra M, Mauri F, Wirtz L. Critical Role of the Exchange Interaction for the Electronic Structure and Charge-Density-Wave Formation in TiSe_{2}. PHYSICAL REVIEW LETTERS 2017; 119:176401. [PMID: 29219422 DOI: 10.1103/physrevlett.119.176401] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/13/2017] [Indexed: 06/07/2023]
Abstract
We show that the inclusion of screened exchange via hybrid functionals provides a unified description of the electronic and vibrational properties of TiSe_{2}. In contrast to local approximations in density functional theory, the explicit inclusion of exact, nonlocal exchange captures the effects of the electron-electron interaction needed to both separate the Ti-d states from the Se-p states and stabilize the charge-density-wave (CDW) (or low-T) phase through the formation of a p-d hybridized state. We further show that this leads to an enhanced electron-phonon coupling that can drive the transition even if a small gap opens in the high-T phase. Finally, we demonstrate that the hybrid functionals can generate a CDW phase where the electronic bands, the geometry, and the phonon frequencies are in agreement with experiments.
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Affiliation(s)
- Maria Hellgren
- Institut de Minéralogie, de Physique des Matériaux et de Cosmochimie, Sorbonne Universités, Université Pierre et Marie Curie, CNRS, IRD, MNHN, 4 Place Jussieu, 75252 Paris, France
- Physics and Materials Science Research Unit, University of Luxembourg, 162a avenue de la Faïencerie, L-1511 Luxembourg, Luxembourg
| | - Jacopo Baima
- Institut de Minéralogie, de Physique des Matériaux et de Cosmochimie, Sorbonne Universités, Université Pierre et Marie Curie, CNRS, IRD, MNHN, 4 Place Jussieu, 75252 Paris, France
| | - Raffaello Bianco
- Institut de Minéralogie, de Physique des Matériaux et de Cosmochimie, Sorbonne Universités, Université Pierre et Marie Curie, CNRS, IRD, MNHN, 4 Place Jussieu, 75252 Paris, France
- Dipartimento di Fisica, Università di Roma La Sapienza, Piazzale Aldo Moro 5, I-00185 Roma, Italy
| | - Matteo Calandra
- Institut de Minéralogie, de Physique des Matériaux et de Cosmochimie, Sorbonne Universités, Université Pierre et Marie Curie, CNRS, IRD, MNHN, 4 Place Jussieu, 75252 Paris, France
| | - Francesco Mauri
- Dipartimento di Fisica, Università di Roma La Sapienza, Piazzale Aldo Moro 5, I-00185 Roma, Italy
- Graphene Labs, Fondazione Istituto Italiano di Tecnologia, Via Morego, I-16163 Genova, Italy
| | - Ludger Wirtz
- Physics and Materials Science Research Unit, University of Luxembourg, 162a avenue de la Faïencerie, L-1511 Luxembourg, Luxembourg
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Samad A, Shafique A, Shin YH. Adsorption and diffusion of mono, di, and trivalent ions on two-dimensional TiS 2. NANOTECHNOLOGY 2017; 28:175401. [PMID: 28357992 DOI: 10.1088/1361-6528/aa6536] [Citation(s) in RCA: 50] [Impact Index Per Article: 7.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
A comparative study of the monovalent (Li, Na, and K) and multivalent (Be, Mg, Ca, and Al) metal ion adsorption and diffusion on an electronically semi-metallic two-dimensional nanosheet of 1T structured TiS2 is presented here to contribute to the search for abundant, cheap, and nontoxic ingredients for efficient rechargeable metal ion batteries. The total formation energy of the metal ion adsorption and the Bader charge analysis show that the divalent Mg and Ca ions can have a charge storage density double that of the monovalent Li, Na, and K ions, while the Be and Al ions form metallic clusters even at a low adsorption density because of their high bulk energies. The adsorption of Mg ions shows the lowest averaged open circuit voltage (0.13 V). The activation energy barriers for the diffusion of metal ions on the surface of the monolayer successively decrease from Li to K and Be to Ca. Mg and Ca, being divalent, are capable of storing a higher power density than Li while K and Na have a higher rate capability than the Li ions. Therefore, rechargeable Li ion batteries can be totally or partially replaceable by Mg ion batteries, where high power density and high cell voltage are required, while the abundant, cheap, and fast Na ions can be used for green grid applications.
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Affiliation(s)
- Abdus Samad
- Department of Physics, University of Ulsan, Ulsan 44610, Republic of Korea
| | - Aamir Shafique
- Department of Physics, University of Ulsan, Ulsan 44610, Republic of Korea
| | - Young-Han Shin
- Department of Physics, University of Ulsan, Ulsan 44610, Republic of Korea
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