Toward a Mechanistic Understanding of Vertical Growth of van der Waals Stacked 2D Materials: A Multiscale Model and Experiments

Monomolecular Membrane-Assisted Growth of Antimony Halide Perovskite/MoS2 Van der Waals Epitaxial Heterojunctions with Long-Lived Interlayer Exciton

Epitaxial growth stands as a key method for integrating semiconductors into heterostructures, offering a potent avenue to explore the electronic and optoelectronic characteristics of cutting-edge materials, such as transition metal dichalcogenide (TMD) and perovskites. Nevertheless, the layer-by-layer growth atop TMD materials confronts a substantial energy barrier, impeding the adsorption and nucleation of perovskite atoms on the 2D surface. Here, we epitaxially grown an inorganic lead-free perovskite on TMD and formed van der Waals (vdW) heterojunctions. Our work employs a monomolecular membrane-assisted growth strategy that reduces the contact angle and simultaneously diminishing the energy barrier for Cs3Sb2Br9 surface nucleation. By controlling the nucleation temperature, we achieved a reduction in the thickness of the Cs3Sb2Br9 epitaxial layer from 30 to approximately 4 nm. In the realm of inorganic lead-free perovskite and TMD heterojunctions, we observed long-lived interlayer exciton of 9.9 ns, approximately 36 times longer than the intralayer exciton lifetime, which benefited from the excellent interlayer coupling brought by direct epitaxial growth. Our research introduces a monomolecular membrane-assisted growth strategy that expands the diversity of materials attainable through vdW epitaxial growth, potentially contributing to future applications in optoelectronics involving heterojunctions.

Substrate Engineering for Chemical Vapor Deposition Growth of Large-Scale 2D Transition Metal Dichalcogenides

The large-scale production of 2D transition metal dichalcogenides (TMDs) is essential to realize their industrial applications. Chemical vapor deposition (CVD) has been considered as a promising method for the controlled growth of high-quality and large-scale 2D TMDs. During a CVD process, the substrate plays a crucial role in anchoring the source materials, promoting the nucleation and stimulating the epitaxial growth. It thus significantly affects the thickness, microstructure, and crystal quality of the products, which are particularly important for obtaining 2D TMDs with expected morphology and size. Here, an insightful review is provided by focusing on the recent development associated with the substrate engineering strategies for CVD preparation of large-scale 2D TMDs. First, the interaction between 2D TMDs and substrates, a key factor for the growth of high-quality materials, is systematically discussed by combining the latest theoretical calculations. Based on this, the effect of various substrate engineering approaches on the growth of large-area 2D TMDs is summarized in detail. Finally, the opportunities and challenges of substrate engineering for the future development of 2D TMDs are discussed. This review might provide deep insight into the controllable growth of high-quality 2D TMDs toward their industrial-scale practical applications.

Growth mechanisms of monolayer hexagonal boron nitride (h-BN) on metal surfaces: theoretical perspectives

Two-dimensional hexagonal boron nitride (h-BN) has appeared as a promising material in diverse areas of applications, including as an excellent substrate for graphene devices, deep-ultraviolet emitters, and tunneling barriers, thanks to its outstanding stability, flat surface, and wide-bandgap. However, for achieving such exciting applications, controllable mass synthesis of high-quality and large-scale h-BN is a precondition. The synthesis of h-BN on metal surfaces using chemical vapor deposition (CVD) has been extensively studied, aiming to obtain large-scale and high-quality materials. The atomic-scale growth process, which is a prerequisite for rationally optimizing growth circumstances, is a key topic in these investigations. Although theoretical investigations on h-BN growth mechanisms are expected to reveal numerous new insights and understandings, different growth methods have completely dissimilar mechanisms, making theoretical research extremely challenging. In this article, we have summarized the recent cutting-edge theoretical research on the growth mechanisms of h-BN on different metal substrates. On the frequently utilized Cu substrate, h-BN development was shown to be more challenging than a simple adsorption-dehydrogenation-growth scenario. Controlling the number of surface layers is also an important challenge. Growth on the Ni surface is controlled by precipitation. An unusual reaction-limited aggregation growth behavior has been seen on interfaces having a significant lattice mismatch to h-BN. With intensive theoretical investigations employing advanced simulation approaches, further progress in understanding h-BN growth processes is predicted, paving the way for guided growth protocol design.

Second Harmonic Generation in Janus Transition Metal Chalcogenide Oxide Monolayers: A First-Principles Investigation

Due to the unique optical responses induced by vertical atomic asymmetry inside a monolayer, two-dimensional Janus structures have been conceived as promising building blocks for nanoscale optical devices. In this paper, second harmonic generation (SHG) in Janus transition metal chalcogenide oxide monolayers is systematically investigated by the first-principles calculations. Second-order nonlinear susceptibilities are theoretically determined for Janus MXO (M = Mo/W, X = S/Se/Te) monolayers. The calculated values are comparable in magnitude with Janus MoSSe monolayer. X-M-O symmetry breaking leads to non-zero components in vertical direction, compared with the non-Janus structure. Focusing on the SHG induced by incident light at 1064 nm, polarization-dependent responses of six Janus MXO monolayers are demonstrated. The symmetry of p-polarization changes from six-fold to three-fold with acute incidence angle. Moreover, the effects of biaxial strain on band structures and SHG are further investigated, taking MoSO as an exemplary case. We expect these results to bring in recipes for designing nonlinear optical devices based on Janus transition metal chalcogenide oxide monolayers.

Nucleation and Growth of Monolayer MoS2 at Multisteps of MoO2 Crystals by Sulfurization

Two-dimensional (2D) materials and their heterostructures are promising for next-generation optoelectronics, spintronics, valleytronics, and electronics. Despite recent progress in various growth studies of 2D materials, mechanical exfoliation of flakes is still the most common method to obtain high-quality 2D materials because precisely controlling material growth and synthesizing a single domain during the growth process of 2D materials, for the desired shape and quality, is challenging. Here, we report the nucleation and growth behaviors of monolayer MoS₂ by sulfurizing a faceted monoclinic MoO₂ crystal. The MoS₂ layers nucleated at the thickness steps of the MoO₂ crystal and grew epitaxially with crystalline correlation to the MoO₂ surface. The epitaxially grown MoS₂ layer expands outwardly on the SiO₂ substrate, resulting in a monolayer single-crystal film, despite multiple nucleations of MoS₂ layers on the MoO₂ surface owing to several thickness steps. Although the photoluminescence of MoS₂ is quenched owing to efficient charge transfer between MoS₂ and metallic MoO₂, the MoS₂ stretched out to the SiO₂ substrate shows a high carrier mobility of (15 cm² V^-1 s^-1), indicating that a high-quality monolayer MoS₂ film can be grown using the MoO₂ crystal as a seed and precursor. Our work shows a method to grow high-quality MoS₂ using a faceted MoO₂ crystal and provides a deeper understanding of the nucleation and growth of 2D materials on a step-like surface.

A general thermodynamics-triggered competitive growth model to guide the synthesis of two-dimensional nonlayered materials

Two-dimensional (2D) nonlayered materials have recently provoked a surge of interest due to their abundant species and attractive properties with promising applications in catalysis, nanoelectronics, and spintronics. However, their 2D anisotropic growth still faces considerable challenges and lacks systematic theoretical guidance. Here, we propose a general thermodynamics-triggered competitive growth (TTCG) model providing a multivariate quantitative criterion to predict and guide 2D nonlayered materials growth. Based on this model, we design a universal hydrate-assisted chemical vapor deposition strategy for the controllable synthesis of various 2D nonlayered transition metal oxides. Four unique phases of iron oxides with distinct topological structures have also been selectively grown. More importantly, ultra-thin oxides display high-temperature magnetic ordering and large coercivity. Mn_xFe_yCo_3-x-yO₄ alloy is also demonstrated to be a promising room-temperature magnetic semiconductor. Our work sheds light on the synthesis of 2D nonlayered materials and promotes their application for room-temperature spintronic devices.

Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications

The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.

Salt-Assisted Selective Growth of H-phase Monolayer VSe2 with Apparent Hole Transport Behavior

Vanadium diselenide (VSe₂) exhibits versatile electronic and magnetic properties in the trigonal prismatic (H-) and octahedral (T-) phases. Compared to the metallic T-phase, the H-phase with a tunable semiconductor property is predicted to be a ferrovalley material with spontaneous valley polarization. Herein we report an epitaxial growth of the monolayer 2D VSe₂ on a mica substrate via the chemical vapor deposition (CVD) method by introducing salt in the precursor. Our first-principles calculations suggest that the monolayer H-phase VSe₂ with a large lateral size is thermodynamically favorable. The honeycomb-like structure and the broken symmetry are directly observed by spherical aberration-corrected scanning transmission electron microscopy (STEM) and confirmed by giant second harmonic generation (SHG) intensity. The p-type transport behavior is further evidenced by the temperature-dependent resistance and field-effect device study. The present work introduces a new phase-stable 2D transition metal dichalcogenide, opening the prospect of novel electronic and spintronics device design.

Growth of bilayer MoTe2 single crystals with strong non-linear Hall effect

The reduced symmetry in strong spin-orbit coupling materials such as transition metal ditellurides (TMDTs) gives rise to non-trivial topology, unique spin texture, and large charge-to-spin conversion efficiencies. Bilayer TMDTs are non-centrosymmetric and have unique topological properties compared to monolayer or trilayer, but a controllable way to prepare bilayer MoTe₂ crystal has not been achieved to date. Herein, we achieve the layer-by-layer growth of large-area bilayer and trilayer 1T′ MoTe₂ single crystals and centimetre-scale films by a two-stage chemical vapor deposition process. The as-grown bilayer MoTe₂ shows out-of-plane ferroelectric polarization, whereas the monolayer and trilayer crystals are non-polar. In addition, we observed large in-plane nonlinear Hall (NLH) effect for the bilayer and trilayer T_d phase MoTe₂ under time reversal-symmetric conditions, while these vanish for thicker layers. For a fixed input current, bilayer T_d MoTe₂ produces the largest second harmonic output voltage among the thicker crystals tested. Our work therefore highlights the importance of thickness-dependent Berry curvature effects in TMDTs that are underscored by the ability to grow thickness-precise layers.

2D transition metal ditellurides exhibit nontrivial topological phases, but the controlled bottom-up synthesis of these materials is still challenging. Here, the authors report the layer-by-layer growth of large-area bilayer and trilayer 1T’ MoTe2 films, showing thickness-dependent ferroelectricity and nonlinear Hall effect.

Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire

Two-dimensional transition-metal dichalcogenides (TMDs) are of interest for beyond-silicon electronics^1,2. It has been suggested that bilayer TMDs, which combine good electrostatic control, smaller bandgap and higher mobility than monolayers, could potentially provide improvements in the energy-delay product of transistors^3-5. However, despite advances in the growth of monolayer TMDs^6-14, the controlled epitaxial growth of multilayers remains a challenge¹⁵. Here we report the uniform nucleation (>99%) of bilayer molybdenum disulfide (MoS₂) on c-plane sapphire. In particular, we engineer the atomic terrace height on c-plane sapphire to enable an edge-nucleation mechanism and the coalescence of MoS₂ domains into continuous, centimetre-scale films. Fabricated field-effect transistor (FET) devices based on bilayer MoS₂ channels show substantial improvements in mobility (up to 122.6 cm² V^-1 s^-1) and variation compared with FETs based on monolayer films. Furthermore, short-channel FETs exhibit an on-state current of 1.27 mA μm^-1, which exceeds the 2028 roadmap target for high-performance FETs¹⁶.

The Intrinsic Thermodynamic Difficulty and a Step-Guided Mechanism for the Epitaxial Growth of Uniform Multilayer MoS2 with Controllable Thickness

Multilayer MoS₂ shows superior performance over the monolayer MoS₂ for electronic devices while the growth of multilayer MoS₂ with controllable and uniform thickness is still very challenging. It is revealed by calculations that monolayer MoS₂ domains are thermodynamically much more favorable than multilayer ones on epitaxial substrates due to the competition between surface interactions and edge formation, leading accordingly to a layer-by-layer growth pattern and non-continuously distributed multilayer domains with uncontrollable thickness uniformity. The thermodynamics model also suggests that multilayer MoS₂ domains with aligned edges can significantly reduce their free energy and represent a local minimum with very prominent energy advantage on a potential energy surface. However, the nucleation probability of multilayer MoS₂ domains with aligned edges is, if not impossible, extremely rare on flat substrates. Herein, a step-guided mechanism for the growth of uniform multilayer MoS₂ on an epitaxial substrate is theoretically proposed. The steps with proper height on sapphire surface are able to guide the simultaneous nucleation of multilayer MoS₂ with aligned edges and uniform thickness, and promote the continuous growth of multilayer MoS₂ films. The proposed mechanism can be reasonably extended to grow multilayer 2D materials with uniform thickness on epitaxial substrates.

Gas-Phase Alkali Metal-Assisted MOCVD Growth of 2D Transition Metal Dichalcogenides for Large-Scale Precise Nucleation Control

Advances in large-area and high-quality 2D transition metal dichalcogenides (TMDCs) growth are essential for semiconductor applications. Here, the gas-phase alkali metal-assisted metal-organic chemical vapor deposition (GAA-MOCVD) of 2D TMDCs is reported. It is determined that sodium propionate (SP) is an ideal gas-phase alkali-metal additive for nucleation control in the MOCVD of 2D TMDCs. The grain size of MoS₂ in the GAA-MOCVD process is larger than that in the conventional MOCVD process. This method can be applied to the growth of various TMDCs (MoS₂ , MoSe₂ , WSe₂ , and WSe₂ ) and the generation of large-scale continuous films. Furthermore, the growth behaviors of MoS₂ under different SP and oxygen injection time conditions are systematically investigated to determine the effects of SP and oxygen on nucleation control in the GAA-MOCVD process. It is found that the combination of SP and oxygen increases the grain size and nucleation suppression of MoS₂ . Thus, the GAA-MOCVD with a precise and controllable supply of a gas-phase alkali metal and oxygen allows achievement of optimum growth conditions that maximizes the grain size of MoS₂ . It is expected that GAA-MOCVD can provide a way for batch fabrication of large-scale atomically thin electronic devices based on 2D semiconductors.

Role of processing parameters in CVD grown crystalline monolayer MoSe2

The quality of as-synthesized monolayers plays a significant role in atomically thin semiconducting transition metal dichalcogenides (TMDCs) to determine the electronic and optical properties. For designing optoelectronic devices, exploring the effect of processing parameters on optical properties is a prerequisite. In this view, we present the influence of processing parameters on the lattice and quasiparticle dynamics of monolayer MoSe₂. The lab-built chemical vapour deposition (CVD) setup is used to synthesize monolayer MoSe₂ flakes with varying shapes, including sharp triangle (ST), truncated triangle (TT), hexagon, and rough edge circle (REC). In particular, the features of as-synthesized monolayer MoSe₂ flakes are examined using Raman and photoluminescence (PL) spectroscopy. Raman spectra reveal that the frequency difference between the A_1g and E¹_2g peaks is >45 cm⁻¹ in all the monolayer samples. PL spectroscopy also shows that the synthesized MoSe₂ flakes are monolayer in nature with a direct band gap in the range of 1.50–1.58 eV. Furthermore, the variation in the direct band gap is analyzed using the spectral weight of quasiparticles in PL emission, where the intensity ratio {I(A⁰)/I(A⁻)} and trion binding energy are found to be ∼1.1–5.0 and ∼23.1–47.5 meV in different monolayer MoSe₂ samples. Hence, these observations manifest that the processing parameters make a substantial contribution in tuning the vibrational and excitonic properties.

Monolayer MoSe₂ flakes with varying shapes, including sharp triangle, truncated triangle, hexagon, and rough edge circle are synthesized using APCVD method. The lattice and quasiparticle dynamics are examined under different growth conditions.

Emerging Two-Dimensional Inorganic Molecular Crystals: The Concept and Beyond

The concept of two-dimensional (2D) inorganic molecular crystals (IMCs) was first introduced by Zhai and coauthors in 2019. In contrast to the layered structures of graphene-like 2D materials, 2D IMCs consist of tiny inorganic molecules bonded together through all-around van der Waals (vdW) interactions. Their structural peculiarities lead to some special behaviors and appealing properties in their synthesis and applications. In this Perspective, we first introduce the concept of 2D IMCs and present the very first synthesis of 2D IMCs using a surface-passivated growth approach. The special intermolecular effects between the inorganic molecules are also summarized. In addition, because of its molecular structure, a vdW film of IMCs can be facilely fabricated, which exhibits appealing potential in integrated 2D devices. More importantly, we give a general outlook for the further development of 2D IMCs with the goal of attracting more attention to this emerging research frontier.

Chemical vapor deposition of 2D materials: A review of modeling, simulation, and machine learning studies

Chemical vapor deposition (CVD) is extensively used to produce large-area two-dimensional (2D) materials. Current research is aimed at understanding mechanisms underlying the nucleation and growth of various 2D materials, such as graphene, hexagonal boron nitride (hBN), and transition metal dichalcogenides (e.g., MoS₂/WSe₂). Herein, we survey the vast literature regarding modeling and simulation of the CVD growth of 2D materials and their heterostructures. We also focus on newer materials, such as silicene, phosphorene, and borophene. We discuss how density functional theory, kinetic Monte Carlo, and reactive molecular dynamics simulations can shed light on the thermodynamics and kinetics of vapor-phase synthesis. We explain how machine learning can be used to develop insights into growth mechanisms and outcomes, as well as outline the open knowledge gaps in the literature. Our work provides consolidated theoretical insights into the CVD growth of 2D materials and presents opportunities for further understanding and improving such processes

Armchair Janus MoSSe Nanoribbon with Spontaneous Curling: A First-Principles Study

Based on density functional theory, we theoretically investigate the electronic structures of free-standing armchair Janus MoSSe nanoribbons (A-MoSSeNR) with width up to 25.5 nm. The equilibrium structures of nanoribbons with spontaneous curling are obtained by energy minimization in molecular dynamics (MD). The curvature is 0.178 nm^-1 regardless of nanoribbon width. Both finite element method and analytical solution based on continuum theory provide qualitatively consistent results for the curling behavior, reflecting that relaxation of intrinsic strain induced by the atomic asymmetry acts as the driving force. The non-edge bandgap of curled A-MoSSeNR reduces faster with the increase of width compared with planar nanoribbons. It can be observed that the real-space wave function at the non-edge VBM is localized in the central region of the curled nanoribbon. When the curvature is larger than 1.0 nm^-1, both edge bandgap and non-edge bandgap shrink with the further increase of curvature. Moreover, we explore the spontaneous curling and consequent sewing process of nanoribbon to form nanotube (Z-MoSSeNT) by MD simulations. The spontaneously formed Z-MoSSeNT with 5.6 nm radius possesses the lowest energy. When radius is smaller than 0.9 nm, the bandgap of Z-MoSSeNT drops rapidly as the radius decreases. We expect the theoretical results can help build the foundation for novel nanoscale devices based on Janus TMD nanoribbons.

Wafer-Scale Uniform Growth of an Atomically Thin MoS2 Film with Controlled Layer Numbers by Metal-Organic Chemical Vapor Deposition

The growth control of a molybdenum disulfide (MoS₂) thin film, including the number of layers, growth rate, and electrical property modulation, remains a challenge. In this study, we synthesized MoS₂ thin films using the metal-organic chemical vapor deposition (MOCVD) method with a 2 inch wafer scale and achieved high thickness uniformity according to the positions on the substrate. In addition, we successfully controlled the number of MoS₂ layers to range from one to five, with a growth rate of 10 min per layer. The layer-dependent optical and electrical properties were characterized by photoluminescence, Raman spectroscopy, differential reflectance spectroscopy, and field effect transistors. To guide the growth of MoS₂, we summarized the relation between the growth aspects and the precursor control in the form of a growth map. Reference to this growth map enabled control of the growth rate, domain density, and domain size according to the application purposes. Finally, we confirmed the electrical performance of MOCVD-grown MoS₂ with five layers under a high-κ dielectric environment, which exhibited an on/off current ratio of 10^∼6 and a maximum field effect mobility of 8.6 cm² V^-1 s^-1.

Preparation Engineering of Two-Dimensional Heterostructures via Bottom-Up Growth for Device Applications

Two-dimensional heterostructures with tremendous electronic and optoelectronic properties hold great promise for nanodevice integrations and applications owing to the wide tunable characteristics. Toward this end, developing construction strategies in allusion to large-scale production of high-quality heterostructures is critical. The mainstream preparation routes are representatively classified into two categories of top-down and bottom-up approaches. Nonetheless, the relatively low reproductivity and the limitation for lateral heterostructure formations of top-down methods at the present stage inherently impeded their further developments. To surmount these obstacles, assembling heterostructures via miscellaneous bottom-up preparation protocols has emerged as a potential solution, attributed to the controllability and clean interface. Three typical approaches of chemical/physical vapor deposition, solution synthesis, and growth under ultrahigh vacuum conditions have shown promise due to the possibilities for preparing heterostructures with predesigned structures, clean interfaces, and the like. Therefore, bottom-up preparation engineering of heterostructures in two dimensions for further device applications is of vital importance. Moreover, heterostructure integrations by these methods have experienced a period of flourishing development in the past few years. In this review, the classical bottom-up growth routes, characterization methods, and latest progress of diverse heterostructures and further device applications are overviewed. Finally, the challenges and opportunities are discussed.

Rapid Growth of Monolayer MoSe2 Films for Large-Area Electronics

The large-scale growth of semiconducting thin films on insulating substrates enables batch fabrication of atomically thin electronic and optoelectronic devices and circuits without film transfer. Here an efficient method to achieve rapid growth of large-area monolayer MoSe₂ films based on spin coating of Mo precursor and assisted by NaCl is reported. Uniform monolayer MoSe₂ films up to a few inches in size are obtained within a short growth time of 5 min. The as-grown monolayer MoSe₂ films are of high quality with large grain size (up to 120 μm). Arrays of field-effect transistors are fabricated from the MoSe₂ films through a photolithographic process; the devices exhibit high carrier mobility of ≈27.6 cm² V^-1 s^-1 and on/off ratios of ≈10⁵. The findings provide insight into the batch production of uniform thin transition metal dichalcogenide films and promote their large-scale applications.

Effect of Carrier Gas Flow Field on Chemical Vapor Deposition of 2D MoS2 Crystal

The carrier gas flow field plays a vital role in the chemical vapor deposition (CVD) process of two dimensional (2D) MoS2 crystal, which was studied by simulations and experiments. Different carrier gas flow fields were studied by utilizing three types of precursor carrier which affected the local gas flow field significantly. The experiment results showed that the appropriate precursor vapor concentration could be achieved by local carrier gas flow field conditioning, resulting in single 2D MoS2 crystals of a large size and a high coating rate of 2D MoS2 crystal on the target substrate surface. The carrier gas flow also contributed to the growth of the 2D MoS2 crystal when it flew towards the target surface. The size of deposited single 2D MoS2 crystal reached tens of micrometers and a few layers of 2D MoS2 crystal were characterized and confirmed.

The Adatom Concentration Profile: A Paradigm for Understanding Two-Dimensional MoS2 Morphological Evolution in Chemical Vapor Deposition Growth

The two-dimensional (2D) transition metal dichalcogenide (TMD) MoS₂ possesses many intriguing electronic and optical properties. Potential technological applications have focused much attention on tuning MoS₂ properties through control of its morphologies during growth. In this paper, we present a unified spatial-temporal model for the growth of MoS₂ crystals with a full spectrum of shapes from triangles, concave triangles, three-point stars, to dendrites through the concept of the adatom concentration profile (ACP). We perform a series of chemical vapor deposition (CVD) experiments controlling adatom concentration on the substrate and growth temperature and present a method for experimentally measuring the ACP in the vicinity of growing islands. We apply a phase-field model of growth that explicitly considers similar variables (adatom concentration, adatom diffusion, and noise effects) and cross-validate the simulations and experiments through the ACP and island morphologies as a function of physically controllable variables. Our calculations reproduce the experimental observations with high fidelity. The ACP is an alternative paradigm to conceptualize the growth of crystals through time, which is expected to be instrumental in guiding the rational shape engineering of MoS₂ crystals.

High-Throughput Growth of Wafer-Scale Monolayer Transition Metal Dichalcogenide via Vertical Ostwald Ripening

For practical device applications, monolayer transition metal dichalcogenide (TMD) films must meet key industry needs for batch processing, including the high-throughput, large-scale production of high-quality, spatially uniform materials, and reliable integration into devices. Here, high-throughput growth, completed in 12 min, of 6-inch wafer-scale monolayer MoS₂ and WS₂ is reported, which is directly compatible with scalable batch processing and device integration. Specifically, a pulsed metal-organic chemical vapor deposition process is developed, where periodic interruption of the precursor supply drives vertical Ostwald ripening, which prevents secondary nucleation despite high precursor concentrations. The as-grown TMD films show excellent spatial homogeneity and well-stitched grain boundaries, enabling facile transfer to various target substrates without degradation. Using these films, batch fabrication of high-performance field-effect transistor (FET) arrays in wafer-scale is demonstrated, and the FETs show remarkable uniformity. The high-throughput production and wafer-scale automatable transfer will facilitate the integration of TMDs into Si-complementary metal-oxide-semiconductor platforms.

Advances in mechanical characterization of 1D and 2D nanomaterials: progress and prospects

Last several decades have sparked a tremendous interest in mechanical properties of low dimensional systems specifically 1D and 2D nanomaterials, in large, due to their remarkable behavior and potential to possess unique and customizable physical properties, which have encouraged the fabrication of new structures to be tuned and utilized for targeted applications. In this critical review we discuss examples that represent evolution of the mechanical characterization techniques developed for 1D and 2D nanomaterials, with special emphasis on specimen fabrication and manipulation, and the different strategies, tools and metrologies, employed for precise positioning and accurate measurements of materials’ strength, elastic modulus, fracture toughness as well as analysis of failure modes. We focus separately on techniques for the mechanical characterization of 1D and 2D nanomaterials and categorize those methods into top-down and bottom-up approaches. Finally, we discuss advantages and some drawbacks in most common methodologies used for 1D and 2D specimen testing and outline future possibilities and potential paths that could boost the development of more universal approaches for technologically viable solutions which would allow for more streamlined and standardized mechanical testing protocols to be developed and implemented.

Two-Dimensional to Three-Dimensional Growth of Transition Metal Diselenides by Chemical Vapor Deposition: Interplay between Fractal, Dendritic, and Compact Morphologies

We investigate the role of growth temperature and metal/chalcogen flux in atmospheric pressure chemical vapor deposition growth of MoSe₂ and WSe₂ on Si/SiO₂ substrates. Using scanning electron microscopy and atomic force microscopy, we observe that the growth temperature and transition metal flux strongly influence the domain morphology, and the compact triangular or hexagonal domains ramify into branched structures as the growth temperature (metal flux) is decreased (increased). The competition between adatom attachment to the domain edges and diffusion of adatoms along the domain boundary determines the evolution of the observed growth morphology. Depending on the growth temperature and flux, two different branched structures-fractals and dendrites-grow. The fractals (with a dimension of ∼1.67) obey a diffusion-limited aggregation mechanism, whereas the dendrites with a higher fractal dimension of ∼1.80 exhibit preferential growth along the symmetry-governed directions. The effect of chalcogen environment is studied, where a Se-rich condition helps restrict Mo-rich nucleus formation, promoting lateral growth. For a Se-deficient environment, several multilayer islands cluster on two-dimensional domains, suggesting a transition from lateral to vertical growth because of insufficient Se passivation. X-ray photoelectron spectroscopy analysis shows a near perfect stoichiometry (Mo/Se = 1:1.98) of MoSe₂ grown in a Se-rich environment, whereas in the Se-deficient condition, a ratio of Mo/Se = 1:1.68 is observed. This also supports the formation of metal-rich nuclei (Mo_1+xSe_2-x) under Se-deficient conditions, leading to three-dimensional clustering. Tuning the growth temperature and metal/chalcogen flux, we propose an optimized CVD growth window for synthesizing large-area Mo(W) selenide.

Importance of the substrate's surface evolution during the MOVPE growth of 2D-transition metal dichalcogenides

In this paper, we explore the impact of changing the growth conditions on the substrate surface during the metal-organic vapor phase epitaxy of 2D-transition metal dichalcogenides. We particularly study the growth of molybdenum disulfide (MoS₂) on sapphire substrates at different temperatures. We show that a high temperature leads to a perfect epitaxial alignment of the MoS₂ layer with respect to the sapphire substrate underneath, whereas a low temperature growth induces a 30° epitaxial alignment. This behavior is found to be related to the different sapphire top surface re-arrangement under H₂S environment at different growth temperatures. Structural analyses conducted on the different samples confirm an improved layer quality at high temperatures. MoS₂ channel-based metal-oxide-semiconductor field-effect transistors are fabricated showing improved device performance with channel layers grown at high temperature.

Multilayer Graphene-Based Thermal Rectifier with Interlayer Gradient Functionalization

As a counterpart of electrical and optical diodes with asymmetric transmission properties, the nanoscale thermal rectifier has attracted huge attention. Graphene has been expected as the most promising candidate for the design and fabrication of high-performance thermal rectifiers. However, most reported graphene-based thermal rectification has been achieved only within the plane of the graphene layer, and the efficiency is heavily limited by the lateral size, restricting the potential applications. In this paper, we propose a design of multilayer graphene-based thermal rectifier (MGTR) with interlayer gradient functionalization. A unique thermal rectification along the vertical direction without lateral size limitation is demonstrated by molecular dynamics simulations. The heat flux prefers to transport from a fully hydrogenated graphene layer to a pristine graphene layer. The analysis of phonon density of states reveals that the mismatch between dominant frequency domains plays a crucial role in the vertical thermal rectification phenomenon. The impacts of temperature and strain on the rectification efficiency are systematically investigated, and we verify the interlayer welding process as an effective approach to eliminate the degradation induced by out-of-plane compression. In addition, compared with uniform hydrogenation at average H-coverage, an anomalous enhancement of in-plane thermal conductivity of multilayer graphene with interlayer gradient hydrogenation is observed. The proposed MGTR has great potential in designing devices for heat management and logic control.

Bilayer Lateral Heterostructures of Transition-Metal Dichalcogenides and Their Optoelectronic Response

Two-dimensional lateral heterojunctions based on monolayer transition-metal dichalcogenides (TMDs) have received increasing attention given that their direct band gap makes them very attractive for optoelectronic applications. Although bilayer TMDs present an indirect band gap, their electrical properties are expected to be less susceptible to ambient conditions, with higher mobilities and density of states when compared to monolayers. Bilayers and few-layers single domain devices have already demonstrated higher performance in radio frequency and photosensing applications. Despite these advantages, lateral heterostructures based on bilayer domains have been less explored. Here, we report the controlled synthesis of multi-junction bilayer lateral heterostructures based on MoS₂-WS₂ and MoSe₂-WSe₂ monodomains. The heterojunctions are created via sequential lateral edge-epitaxy that happens simultaneously in both the first and the second layers. A phenomenological mechanism is proposed to explain the growth mode with self-limited thickness that happens within a certain window of growth conditions. With respect to their as-grown monolayer counterparts, bilayer lateral heterostructures yield nearly 1 order of magnitude higher rectification currents. They also display a clear photovoltaic response, with short circuit currents ∼10³ times larger than those extracted from the as-grown monolayers, in addition to room-temperature electroluminescence. The improved performance of bilayer heterostructures significantly expands the potential of two-dimensional materials for optoelectronics.

Controlled Growth of Large-Area Bilayer Tungsten Diselenides with Lateral P-N Junctions

Bilayer two-dimensional (2D) van der Waals (vdW) materials are attracting increasing attention due to their predicted high quality electronic and optical properties. Here, we demonstrate dense, selective growth of WSe₂ bilayer flakes by chemical vapor deposition with the use of a 1:10 molar mixture of sodium cholate and sodium chloride as the growth promoter to control the local diffusion of W-containing species. A large fraction of the bilayer WSe₂ flakes showed a 0 (AB) and 60° (AA') twist between the two layers, whereas Moiré 15 and 30° twist angles were also observed. Well-defined monolayer-bilayer junctions were formed in the as-grown bilayer WSe₂ flakes, and these interfaces exhibited p-n diode rectification and an ambipolar transport characteristic. This work provides an efficient method for the layer-controlled growth of 2D materials, in particular, 2D transition metal dichalcogenides, and promotes their applications in next-generation electronic and optoelectronic devices.

Engineering Zero-Dimensional Quantum Confinement in Transition-Metal Dichalcogenide Heterostructures

Achieving robust, localized quantum states in two-dimensional (2D) materials like graphene is desirable for optoelectronics and quantum information yet challenging due to the difficulties in confining Dirac fermions. Traditional colloidal nanoparticle and epitaxially grown quantum dots are also impractical for solid-state devices, due to either complex surface chemistry, unreliable spatial positioning, or lack of electrical and optical access. In this work, we design and optimize nanoscale monolayer transition-metal dichalcogenide (TMD) heterostructures to natively host massive Dirac fermion bound states. We develop an integrated multiscale approach to translate first-principles electronic structure to higher length scales, where we apply a continuum model to consider arbitrary 2D quantum dot geometries and sizes. Focusing on a model system of an MoS₂ quantum dot in a WS₂ matrix (MoS₂/WS₂), we find discrete bound states in triangular dots with side lengths up to 20 nm. We propose figures of merit that, when optimized for, result in heterostructure configurations engineered for maximally isolated bound states at room temperature. These design principles apply to the entire family of semiconducting TMD materials, and we predict 6.5 nm MoS₂/WS₂ (quantum dot/matrix) triangular dots and 4.5 nm MoSe₂/WSe₂ triangular dots as ideal systems for confining massive Dirac fermions.

Recent Developments in Controlled Vapor-Phase Growth of 2D Group 6 Transition Metal Dichalcogenides

An overview of recent developments in controlled vapor-phase growth of 2D transition metal dichalcogenide (2D TMD) films is presented. Investigations of thin-film formation mechanisms and strategies for realizing 2D TMD films with less-defective large domains are of central importance because single-crystal-like 2D TMDs exhibit the most beneficial electronic and optoelectronic properties. The focus is on the role of the various growth parameters, including strategies for efficiently delivering the precursors, the selection and preparation of the substrate surface as a growth assistant, and the introduction of growth promoters (e.g., organic molecules and alkali metal halides) to facilitate the layered growth of (Mo, W)(S, Se, Te)₂ atomic crystals on inert substrates. Critical factors governing the thermodynamic and kinetic factors related to chemical reaction pathways and the growth mechanism are reviewed. With modification of classical nucleation theory, strategies for designing and growing various vertical/lateral TMD-based heterostructures are discussed. Then, several pioneering techniques for facile observation of structural defects in TMDs, which substantially degrade the properties of macroscale TMDs, are introduced. Technical challenges to be overcome and future research directions in the vapor-phase growth of 2D TMDs for heterojunction devices are discussed in light of recent advances in the field.

Hydrogen-assisted step-edge nucleation of MoSe2 monolayers on sapphire substrates

The fabrication of large-area single crystalline monolayer transition metal dichalcogenides (TMDs) is essential for a range of electric and optoelectronic applications. Chemical vapor deposition (CVD) is a promising method to achieve this goal by employing orientation control or alignment along the crystalline lattice of the substrate such as sapphire. On the other hand, a fundamental understanding of the aligned-growth mechanism of TMDs is limited. In this report, we show that the controlled introduction of H2 during the CVD growth of MoSe2 plays a vital role in the step-edge aligned nucleation on a c-sapphire (0001) substrate. In particular, the MoSe2 domains nucleate along the [112[combining macron]0] step-edge orientation by flowing H2 subsequent to pure Ar. Systematic studies, including the H2 introduction time, flow rate, and substrate temperature, suggest that the step-edge aligned nucleation of MoSe2 can be controlled by the hydrogen concentration on the sapphire substrate. These results offer important insights into controlling the epitaxial growth of 2D materials on a crystalline substrate.

Scalable high performance radio frequency electronics based on large domain bilayer MoS2

Atomically-thin layered molybdenum disulfide (MoS₂) has attracted tremendous research attention for their potential applications in high performance DC and radio frequency electronics, especially for flexible electronics. Bilayer MoS₂ is expected to have higher electron mobility and higher density of states with higher performance compared with single layer MoS₂. Here, we systematically investigate the synthesis of high quality bilayer MoS₂ by chemical vapor deposition on molten glass with increasing domain sizes up to 200 μm. High performance transistors with optimized high-κ dielectrics deliver ON-current of 427 μA μm⁻¹ at 300 K and a record high ON-current of 1.52 mA μm⁻¹ at 4.3 K. Moreover, radio frequency transistors are demonstrated with an extrinsic high cut-off frequency of 7.2 GHz and record high extrinsic maximum frequency of oscillation of 23 GHz, together with gigahertz MoS₂ mixers on flexible polyimide substrate, showing the great potential for future high performance DC and high-frequency electronics.

Large area two-dimensional materials show promise for applications in DC and RF flexible electronics. Here, the authors report RF transistors based on chemical vapor deposited bilayer MoS₂ with 23 GHz extrinsic maximum oscillation frequency, and gigahertz mixers on flexible polyimide substrates.

Direct Measurement of the Magnitude of the van der Waals Interaction of Single and Multilayer Graphene

Vertical stacking of monolayers via van der Waals (vdW) assembly is an emerging field that opens promising routes toward engineering physical properties of two-dimensional materials. Industrial exploitation of these engineering heterostructures as robust functional materials still requires bounding their measured properties so as to enhance theoretical tractability and assist in experimental designs. Specifically, the short-range attractive vdW forces are responsible for the adhesion of chemically inert components and are recognized to play a dominant role in the functionality of these structures. Here, we reliably quantify the strength of ambient vdW forces in terms of an effective Hamaker coefficient for chemical vapor deposition-grown graphene and show how it scales by a factor of two or three from single to multiple layers on standard supporting surfaces such as copper or silicon oxide. Furthermore, direct measurements on freestanding graphene provide the means to discern the interplay between the vdW potential of graphene and its supporting substrate. Our results demonstrated that the underlying substrates could be controllably exploited to enhance or reduce the vdW force of graphene surfaces. We interpret the physical phenomena in terms of a Lifshitz theory-based analytical model.

Beyond Graphene Anode Materials for Emerging Metal Ion Batteries and Supercapacitors

Intensive research effort is currently focused on the development of efficient, reliable, and environmentally safe electrochemical energy storage systems due to  the ever-increasing global energy storage demand. Li ion battery systems have been used as the primary energy storage device over the last three decades. However, low abundance and uneven distribution of lithium and cobalt in the earth crust and the associated cost of these materials, have resulted in a concerted effort to develop beyond lithium electrochemical storage systems. In the case of non-Li ion rechargeable systems, the development of electrode materials is a significant challenge, considering the larger ionic size of the metal-ions and slower kinetics. Two-dimensional (2D) materials, such as graphene, transition metal dichalcogenides, MXenes and phosphorene, have garnered significant attention recently due to their multi-faceted advantageous properties: large surface areas, high electrical and thermal conductivity, mechanical strength, etc. Consequently, the study of 2D materials as negative electrodes is of notable importance as emerging non-Li battery systems continue to generate increasing attention. Among these interesting materials, graphene has already been extensively studied and reviewed, hence this report focuses on 2D materials beyond graphene for emerging non-Li systems. We provide a comparative analysis of 2D material chemistry, structure, and performance parameters as anode materials in rechargeable batteries and supercapacitors.

Temperature Difference Triggering Controlled Growth of All-Inorganic Perovskite Nanowire Arrays in Air

All-inorganic perovskites have attracted increasing worldwide interest due to its significantly improved stability in atmospheric environment compared to organic-inorganic hybrid perovskites, which renders it infinitely applicable in many fields such as electronics, optoelectronics, and energy storage. However, all-inorganic perovskites have to confront the challenges from fabrication before their wide utilization in the aforementioned applications. Liquid-phase synthesis holds the advantage of mass production and easy modulation of composition but with the deficiencies of relatively low crystallinity and disordered products. Interestingly, gas-phase growth has complementary characteristics compared to the liquid-phase method. In this work, it is proposed that a novel temperature difference triggers growth strategy to integrate the merits of the liquid- and gas-phase methods, and the feasibility of this strategy via a simple lab-use hot plate is demonstrated. High quality all-inorganic perovskites, cesium lead halide (CsPbX₃ ) nanowire arrays, can be epitaxially grown as in a gas-phase method, but at the same time, the composition of products can be easily modulated by predesigning the recipe of precursors as in the liquid-phase method on a large scale. Notably, the as-fabricated CsPbX₃ perovskite nanowire arrays demonstrate excellent stability and good optoelectronic properties in air. It is believed that this novel strategy can strikingly prompt the development of perovskites fabrication and applications in future.

Synthesis of 2D transition metal dichalcogenides by chemical vapor deposition with controlled layer number and morphology

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have stimulated the modern technology due to their unique and tunable electronic, optical, and chemical properties. Therefore, it is very important to study the control parameters for material preparation to achieve high quality thin films for modern electronics, as the performance of TMDs-based device largely depends on their layer number, grain size, orientation, and morphology. Among the synthesis methods, chemical vapor deposition (CVD) is an excellent technique, vastly used to grow controlled layer of 2D materials in recent years. In this review, we discuss the different growth routes and mechanisms to synthesize high quality large size TMDs using CVD method. We highlight the recent advances in the controlled growth of mono- and few-layer TMDs materials by varying different growth parameters. Finally, different strategies to control the grain size, boundaries, orientation, morphology and their application for various field of are also thoroughly discussed.

Dislocation driven spiral and non-spiral growth in layered chalcogenides

Two-dimensional materials have shown great promise for implementation in next-generation devices. However, controlling the film thickness during epitaxial growth remains elusive and must be fully understood before wide scale industrial application. Currently, uncontrolled multilayer growth is frequently observed, and not only does this growth mode contradict theoretical expectations, but it also breaks the inversion symmetry of the bulk crystal. In this work, a multiscale theoretical investigation aided by experimental evidence is carried out to identify the mechanism of such an unconventional, yet widely observed multilayer growth in the epitaxy of layered materials. This work reveals the subtle mechanistic similarities between multilayer concentric growth and spiral growth. Using the combination of experimental demonstration and simulations, this work presents an extended analysis of the driving forces behind this non-ideal growth mode, and the conditions that promote the formation of these defects. Our study shows that multilayer growth can be a result of both chalcogen deficiency and chalcogen excess: the former causes metal clustering as nucleation defects, and the latter generates in-domain step edges facilitating multilayer growth. Based on this fundamental understanding, our findings provide guidelines for the narrow window of growth conditions which enables large-area, layer-by-layer growth.