Scalable Preparation of High-Density Semiconducting Carbon Nanotube Arrays for High-Performance Field-Effect Transistors

Biomimetic wafer-scale alignment of tellurium nanowires for high-mobility flexible and stretchable electronics

Flexible and stretchable thin-film transistors (TFTs) are crucial in skin-like electronics for wearable and implantable applications. Such electronics are usually constrained in performance owing to a lack of high-mobility and stretchable semiconducting channels. Tellurium, a rising semiconductor with superior charge carrier mobilities, has been limited by its intrinsic brittleness and anisotropy. Here, we achieve highly oriented arrays of tellurium nanowires (TeNWs) on various substrates with wafer-scale scalability by a facile lock-and-shear strategy. Such an assembly approach mimics the alignment process of the trailing tentacles of a swimming jellyfish. We further apply these TeNW arrays in high-mobility TFTs and logic gates with improved flexibility and stretchability. More specifically, mobilities over 100 square centimeters per volt per second and on/off ratios of ~104 are achieved in TeNW-TFTs. The TeNW-TFTs on polyethylene terephthalate can sustain an omnidirectional bending strain of 1.3% for more than 1000 cycles. Furthermore, TeNW-TFTs on an elastomeric substrate can withstand a unidirectional strain of 40% with no performance degradation.

Assembly and Alignment of High Packing Density Carbon Nanotube Arrays Using Lithographically Defined Microscopic Water Features

High packing density aligned arrays of semiconducting carbon nanotubes (CNTs) are required for many electronics applications. Past work has shown that the accumulation of CNTs at a water-solvent interface can drive array self-assembly. Previously, the confining interface was a large-area, macroscopic feature. Here, we report on the CNT assembly on microscopic water features. Water microdroplets are formed on 10-100 μm wide hydrophilic stripes patterned on a substrate. Exposure to CNTs dispersed in solvent accumulates CNTs at the microdroplet-solvent interface, driving their alignment and deposition at the microdroplet-solvent-substrate contact line. Compared with macroscopic methods in which the contact line uncontrollably moves across the substrate as it is pulled out of the liquids, the hydrophilic patterns and microdroplets allow pinning of the contact line. As CNTs deposit, the contact line self-translates, allowing for dense CNT packing. We realize monolayer CNT arrays aligned within ±3.9° at density of 250 μm-1 and field effect transistors with a high current density of 1.9 mA μm-1 and transconductance of 1.2 mS μm-1 at -0.6 V drain bias and 60 nm channel length.

Iterative Strategy for Sorting Single-Chirality Single-Walled Carbon Nanotubes from Aqueous to Organic Systems

Significant advancements in electronic devices and integrated circuits have been facilitated by semiconducting single-walled carbon nanotubes (SWCNTs) sorted by conjugated polymers (CPs). However, the variety of CPs with single-chirality selectivity is limited, and the sorting results are strongly dependent on the chiral distribution of the starting materials. To address this, we develop an iterative strategy to achieve single-chirality SWCNT separation from aqueous to organic systems, based on a multistep tandem extraction technique that allows a gentle and nondestructive separation of surfactants from SWCNTs, ensuring an efficient system transfer. In parallel, we refined the iterative sorting process between CPs. Employing two starting materials with narrow diameter distributions, using three CPs, we successfully sorted out five single-chirality SWCNTs of the (9,5), (8,6), (10,5), (8,7), and (11,3) species in organic systems. This strategy bridges the gap between aqueous and organic separation systems, achieving efficient complementarity between them.

High-Sensitivity 2D MoS2/1D MWCNT Hybrid Dimensional Heterostructure Photodetector

A photodetector based on a hybrid dimensional heterostructure of laterally aligned multiwall carbon nanotubes (MWCNTs) and multilayered MoS₂ was prepared using the micro-nano fixed-point transfer technique. Thanks to the high mobility of carbon nanotubes and the efficient interband absorption of MoS₂, broadband detection from visible to near-infrared (520-1060 nm) was achieved. The test results demonstrate that the MWCNT-MoS2 heterostructure-based photodetector device exhibits an exceptional responsivity, detectivity, and external quantum efficiency. Specifically, the device demonstrated a responsivity of 3.67 × 10³ A/W (λ = 520 nm, V_ds = 1 V) and 718 A/W (λ = 1060 nm, V_ds = 1 V). Moreover, the detectivity (D*) of the device was found to be 1.2 × 10¹⁰ Jones (λ = 520 nm) and 1.5 × 10⁹ Jones (λ = 1060 nm), respectively. The device also demonstrated external quantum efficiency (EQE) values of approximately 8.77 × 10⁵% (λ = 520 nm) and 8.41 × 10⁴% (λ = 1060 nm). This work achieves visible and infrared detection based on mixed-dimensional heterostructures and provides a new option for optoelectronic devices based on low-dimensional materials.

Improving the Performance of Aligned Carbon Nanotube-Based Transistors by Refreshing the Substrate Surface

An aligned semiconducting carbon nanotube (A-CNT) array has been considered an excellent channel material to construct high-performance field-effect transistors (FETs) and integrated circuits (ICs). The purification and assembly processes to prepare a semiconducting A-CNT array require conjugated polymers, introducing stubborn residual polymers and stress at the interface between A-CNTs and substrate, which inevitably affects the fabrication and performance of the FETs. In this work, we develop a process to refresh the Si/SiO₂ substrate surface underneath the A-CNT film by wet etching to clean the residual polymers and release the stress. Top-gated A-CNT FETs fabricated with this process show significant performance improvement especially in terms of saturation on-current, peak transconductance, hysteresis, and subthreshold swing. These improvements are attributed to the increase in carrier mobility from 1025 to 1374 cm²/Vs by 34% after the substrate surface refreshing process. Representative 200 nm gate-length A-CNT FETs exhibit an on-current of 1.42 mA/μm and a peak transconductance of 1.06 mS/μm at a drain-to-source bias of 1 V, subthreshold swing (SS) of 105 mV/dec, and negligible hysteresis and drain-induced barrier lowering (DIBL) of 5 mV/V.

Fabrication and Functionalisation of Nanocarbon-Based Field-Effect Transistor Biosensors

Nanocarbon-based field-effect transistor (NC-FET) biosensors are at the forefront of future diagnostic technology. By integrating biological molecules with electrically conducting carbon-based platforms, high sensitivity real-time multiplexed sensing is possible. Combined with their small footprint, portability, ease of use, and label-free sensing mechanisms, NC-FETs are prime candidates for the rapidly expanding areas of point-of-care testing, environmental monitoring and biosensing as a whole. In this review we provide an overview of the basic operational mechanisms behind NC-FETs, synthesis and fabrication of FET devices, and developments in functionalisation strategies for biosensing applications.

Carbon dioxide-boosted growth of high-density and vertically aligned carbon nanotube arrays on a stainless steel mesh

Vertically aligned carbon nanotubes (VACNTs), a unique group of highly aligned CNTs normal to a substrate, have been extensively studied during the past decades. However, it is a long-standing challenge to improve the height of VACNTs due to the incidental deactivation of catalysts during growth. Herein, we demonstrate a facile strategy toward synthesizing high-density and well-aligned CNT arrays from in situ formed Fe-based catalysts on a stainless steel (SS) mesh. These catalysts were generated by direct oxidation-reduction treatment to the SS, which had excellent adhesion on the mesh substrate, and thus suppressed catalyst aggregation and promoted CNT growth under the flow of C₂H₂. In particular, by feeding additional CO₂ at an optimal rate, the height of CNT arrays could be boosted from ca. 15 μm to ca. 80.0 μm, one of the highest heights observed for VACNTs on SS-based substrates so far. This is attributed to the prolonged activity of the catalysts by CO₂ induced removal of extra carbon. Our study might provide an insight into the development of efficient strategies for VACNT growth on conductive substrates.

Fixture-free omnidirectional prestretching fabrication and integration of crumpled in-plane micro-supercapacitors

Multidimensional folded structures with elasticity could provide spatial charge storage capability and shape adaptability for micro-supercapacitors (MSCs). Here, highly crumpled in-plane MSCs with superior conformality are fabricated in situ and integrated by a fixture-free omnidirectional elastic contraction strategy. Using carbon nanotube microelectrodes, a single crumpled MSC holds an ultrahigh volumetric capacitance of 9.3 F cm^-3, and its total areal capacitance is 45 times greater than the initial state. Experimental and theoretical simulation methods indicate that strain-induced improvements of adsorption energy and conductance for crumpled microelectrodes are responsible for the prominent enhancement of electrochemical performance. With outstanding morphological randomicity, the integrated devices can serve as smart coatings in moving robots, withstanding extreme mechanical deformations. Notably, integration on a spherical surface is possible by using a spherical mask, in which a small area of the microdevice array (3.9 cm²) can produce a high output voltage of 100 V.

Dip-Coating Self-Assembly Fabrication and Polarization Sensitive Photoresponse of Aligned Single-Walled Carbon Nanotube Film

It is challenging to obtain wafer-scaled aligned films for completely exploiting the promising properties of semiconducting single-walled carbon nanotubes (s-SWCNTs). Aligned s-SWCNTs with a large area can be obtained by combining water evaporation and slow withdrawal-induced self-assembly in a dip-coating process. Moreover, the tunability of deposition morphology parameters such as stripe width and spacing is examined. The polarized Raman results show that s-SWCNTs can be aligned in ±8.6°. The derived two terminal photodetector shows both a high negative responsivity of 41 A/W at 520 nm and high polarization sensitivity. Our results indicate that aligned films with a large area may be useful to electronics- and optoelectronics-related applications.

Confined Fe Catalysts for High-Density SWNT Arrays Growth: a New Territory for Catalyst-Substrate Interaction Engineering

Great efforts have been devoted to searching for efficient catalytic systems to produce ultra-high density single-walled carbon nanotube (SWNT) arrays, which lay the foundation for future electronic devices. However, one major obstacle for realizing high-density surface-aligned SWNT arrays is the poor stability of metal nanoparticles in chemical vapor deposition catalytic processes. Recently, Trojan catalyst has been reported to yield unprecedented high-density SWNT arrays with 130 SWNTs per µm on the a-plane (11-20) of the sapphire substrate. Herein, a concept of catalyst confinement effect is put forward to revealing the secret of remarkable growth efficiency of SWNT arrays by Trojan catalyst. Combined experimental and theoretical studies indicate that confinement of catalyst nanoparticles on discrete a-plane strips plays a key role in stabilizing the small nanoparticles. The highly dispersive and active states of catalysts are maintained, which promote the growth of super-dense SWNT arrays. By rationally designing the substrate reconstruction process, large areas of dense SWNT arrays (130 SWNTs per µm) covering the entire substrate are obtained. This approach may provide novel ideas for the synthesis of various high-density 1D nanomaterials.

Aligned 2D carbon nanotube liquid crystals for wafer-scale electronics

Semiconducting carbon nanotubes promise faster performance and lower power consumption than Si in field-effect transistors (FETs) if they can be aligned in dense arrays. Here, we demonstrate that nanotubes collected at a liquid/liquid interface self-organize to form two-dimensional (2D) nematic liquid crystals that globally align with flow. The 2D liquid crystals are transferred onto substrates in a continuous process generating dense arrays of nanotubes aligned within ±6°, ideal for electronics. Nanotube ordering improves with increasing concentration and decreasing temperature due to the underlying liquid crystal phenomena. The excellent alignment and uniformity of the transferred assemblies enable FETs with exceptional on-state current density averaging 520 μA μm⁻¹at only −0.6 V, and variation of only 19%. FETs with ion gel top gates demonstrate subthreshold swing as low as 60 mV decade⁻¹. Deposition across a 10-cm substrate is achieved, evidencing the promise of 2D nanotube liquid crystals for commercial semiconductor electronics.

Binder-Free Air Electrodes for Rechargeable Zinc-Air Batteries: Recent Progress and Future Perspectives

Designing an efficient air electrode is of great significance for the performance of rechargeable zinc (Zn)-air batteries. However, the most widely used approach to fabricate an air electrode involves polymeric binders, which may increase the interface resistance and block electrocatalytic active sites, thus deteriorating the performance of the battery. Therefore, binder-free air electrodes have attracted more and more research interests in recent years. This article provides a comprehensive overview of the latest advancements in designing and fabricating binder-free air electrodes for electrically rechargeable Zn-air batteries. Beginning with the fundamentals of Zn-air batteries and recently reported bifunctional active catalysts, self-supported air electrodes for liquid-state and flexible solid-state Zn-air batteries are then discussed in detail. Finally, the conclusion and the challenges faced for binder-free air electrodes in Zn-air batteries are also highlighted.

Chemical and topographical patterns combined with solution shear for selective-area deposition of highly-aligned semiconducting carbon nanotubes

Selective deposition of semiconducting carbon nanotubes (s-CNTs) into densely packed, aligned arrays of individualized s-CNTs is necessary to realize their potential in semiconductor electronics. We report the combination of chemical contrast patterns, topography, and pre-alignment of s-CNTs via shear to achieve selective-area deposition of aligned arrays of s-CNTs. Alternate stripes of surfaces favorable and unfavorable to s-CNT adsorption were patterned with widths varying from 2000 nm down to 100 nm. Addition of topography to the chemical contrast patterns combined with shear enabled the selective-area deposition of arrays of quasi-aligned s-CNTs (∼14°) even in patterns that are wider than the length of individual nanotubes (>500 nm). When the width of the chemical and topographical contrast patterns is less than the length of individual nanotubes (<500 nm), confinement effects become dominant enabling the selective-area deposition of much more tightly aligned s-CNTs (∼7°). At a trench width of 100 nm, we demonstrate the lowest standard deviation in alignment degree of 7.6 ± 0.3° at a deposition shear rate of 4600 s^-1, while maintaining an individualized s-CNT density greater than 30 CNTs μm^-1. Chemical contrast alone enables selective-area deposition, but chemical contrast in addition to topography enables more effective selective-area deposition and stronger confinement effects, with the advantage of removal of nanotubes deposited in spurious areas via selective lift-off of the topographical features. These findings provide a methodology that is inherently scalable, and a means to deposit spatially selective, aligned s-CNT arrays for next-generation semiconducting devices.

Carboxylic acids as anchoring components on aluminum oxide for the alignment relay technique of single-walled carbon nanotubes

We illustrate using a carboxylic acid anchoring component in the Alignment Relay Technique on silica and alumina surfaces. We present theoretical calculations on the interactions between the iptycenes' various pockets and the carbon nanotubes.

Chirality-Enriched Carbon Nanotubes for Next-Generation Computing

For the past half century, silicon has served as the primary material platform for integrated circuit technology. However, the recent proliferation of nontraditional electronics, such as wearables, embedded systems, and low-power portable devices, has led to increasingly complex mechanical and electrical performance requirements. Among emerging electronic materials, single-walled carbon nanotubes (SWCNTs) are promising candidates for next-generation computing as a result of their superlative electrical, optical, and mechanical properties. Moreover, their chirality-dependent properties enable a wide range of emerging electronic applications including sub-10 nm complementary field-effect transistors, optoelectronic integrated circuits, and enantiomer-recognition sensors. Here, recent progress in SWCNT-based computing devices is reviewed, with an emphasis on the relationship between chirality enrichment and electronic functionality. In particular, after highlighting chirality-dependent SWCNT properties and chirality enrichment methods, the range of computing applications that have been demonstrated using chirality-enriched SWCNTs are summarized. By identifying remaining challenges and opportunities, this work provides a roadmap for next-generation SWCNT-based computing.

Planar Growth, Integration, and Applications of Semiconducting Nanowires

Silicon and other inorganic semiconductor nanowires (NWs) have been extensively investigated in the last two decades for constructing high-performance nanoelectronics, sensors, and optoelectronics. For many of these applications, these tiny building blocks have to be integrated into the existing planar electronic platform, where precise location, orientation, and layout controls are indispensable. In the advent of More-than-Moore's era, there are also emerging demands for a programmable growth engineering of the geometry, composition, and line-shape of NWs on planar or out-of-plane 3D sidewall surfaces. Here, the critical technologies established for synthesis, transferring, and assembly of NWs upon planar surface are examined; then, the recent progress of in-plane growth of horizontal NWs directly upon crystalline or patterned substrates, constrained by using nanochannels, an epitaxial interface, or amorphous thin film precursors is discussed. Finally, the unique capabilities of planar growth of NWs in achieving precise guided growth control, programmable geometry, composition, and line-shape engineering are reviewed, followed by their latest device applications in building high-performance field-effect transistors, photodetectors, stretchable electronics, and 3D stacked-channel integration.

Electromagnetic resonance analysis of asymmetric carbon nanotube dimers for sensing applications

In this work, we study the electromagnetic scattering characteristics of asymmetric carbon nanotube (CNT) dimers with rigorous computational experiments. We show that the configurational asymmetry in the CNT dimer assembly creates a unique field distribution in the vicinity of the dimer, which in turn generates two distinct resonances representing the bonding and anti-bonding modes. The sensitivity of these two modes towards CNT lengths, orientations, and shapes, is studied. We also show the ability of asymmetric CNT dimer for the contactless detection of nanoparticles (NP). The presence of a NP in the vicinity of the CNT dimer perturbs the dimer's field distribution and causes unequal shifts in the bonding and anti-bonding resonances depending on the NP location, material, size and shape. By studying the differences in these resonance shifts, we show that the relative location and orientation of the NP can be reconstructed. The computational experiments performed in this work have the potential to guide the use of asymmetric CNT dimers for novel sensing applications.

Chirality Pure Carbon Nanotubes: Growth, Sorting, and Characterization

Single-walled carbon nanotubes (SWCNTs) have been attracting tremendous attention owing to their structure (chirality) dependent outstanding properties, which endow them with great potential in a wide range of applications. The preparation of chirality-pure SWCNTs is not only a great scientific challenge but also a crucial requirement for many high-end applications. As such, research activities in this area over the last two decades have been very extensive. In this review, we summarize recent achievements and accumulated knowledge thus far and discuss future developments and remaining challenges from three aspects: controlled growth, postsynthesis sorting, and characterization techniques. In the growth part, we focus on the mechanism of chirality-controlled growth and catalyst design. In the sorting part, we organize and analyze existing literature based on sorting targets rather than methods. Since chirality assignment and quantification is essential in the study of selective preparation, we also include in the last part a comprehensive description and discussion of characterization techniques for SWCNTs. It is our view that even though progress made in this area is impressive, more efforts are still needed to develop both methodologies for preparing ultrapure (e.g., >99.99%) SWCNTs in large quantity and nondestructive fast characterization techniques with high spatial resolution for various nanotube samples.

Carbon Nanotube Film-Based Radio Frequency Transistors with Maximum Oscillation Frequency above 100 GHz

Carbon nanotubes (CNTs) have been considered a preferred channel material for constructing high-performance radio frequency (RF) transistors with outstanding current gain cutoff frequency (f_T) and power gain cutoff frequency (f_max) but the highest reported f_max is only 70 GHz. Here, we explore how good RF transistors based on solution-derived randomly oriented semiconducting CNT films, which are the most mature CNT materials for scalable fabrication of transistors and integrated circuits, can be achieved. Owing to the significantly reduced number of CNT/CNT junctions obtained by scaling the channel length down to below 100 nm, we realized RF field-effect transistors (FETs) with maximum transconductance G_m up to 0.38 mS/μm, which is the record among CNT-based RF FETs. After de-embedding the pad-induced capacitances and resistances, the CNT FETs with different gate lengths (L_g) exhibit f_T as high as 103 GHz (intrinsically 281 GHz) or f_max up to 107 GHz (intrinsically 190 GHz), which are the records among CNT-based RF FETs. In particular, the CNT FETs with an L_g of 50 nm present pad de-embedding f_T of 86 GHz and f_max of 85 GHz, and represent the best CNT RF transistor in terms of comprehensive performance to date. To demonstrate the actual high-speed and scalable fabrication of our CNT RF FETs, we fabricated CNT FET-based five-stage ring oscillators with oscillation frequencies above 5 GHz.

Modern microprocessor built from complementary carbon nanotube transistors

Electronics is approaching a major paradigm shift because silicon transistor scaling no longer yields historical energy-efficiency benefits, spurring research towards beyond-silicon nanotechnologies. In particular, carbon nanotube field-effect transistor (CNFET)-based digital circuits promise substantial energy-efficiency benefits, but the inability to perfectly control intrinsic nanoscale defects and variability in carbon nanotubes has precluded the realization of very-large-scale integrated systems. Here we overcome these challenges to demonstrate a beyond-silicon microprocessor built entirely from CNFETs. This 16-bit microprocessor is based on the RISC-V instruction set, runs standard 32-bit instructions on 16-bit data and addresses, comprises more than 14,000 complementary metal-oxide-semiconductor CNFETs and is designed and fabricated using industry-standard design flows and processes. We propose a manufacturing methodology for carbon nanotubes, a set of combined processing and design techniques for overcoming nanoscale imperfections at macroscopic scales across full wafer substrates. This work experimentally validates a promising path towards practical beyond-silicon electronic systems.

Electrochemical biosensor for methyl parathion based on single-walled carbon nanotube/glutaraldehyde crosslinked acetylcholinesterase-wrapped bovine serum albumin nanocomposites

Semiconducting single-walled carbon nanotubes (s-SWCNTs) have been demonstrated as an excellent material for transistors, miniaturized devices and sensors due to their high carrier mobility, stability, scattering-free ballistic transport of carriers etc. Herein, we have designed a biosensor to selectively detect methyl parathion (MP, organophosphorus pesticide) using glutaraldehyde (Glu) cross-linked with acetylcholinesterase (AChE) immobilized on s-SWCNTs wrapped with bovine serum albumin (BSA). The fabricated biosensor was characterized and confirmed by Fourier-transform infrared spectroscopy (FT-IR), cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS) and square wave voltammetry (SWV). In the presence of MP, the effective interaction between AChE and MP favours the accumulation of MP-AChE complex on the glassy carbon electrode (GCE) surface which reduces the electron transfer property. Based on this interaction, detection of various concentration of MP was demonstrated by SWV using BSA/AChE-Glu-s-SWCNTs composite modified electrode. The proposed biosensor exhibited a wide linear range (WLR) for MP target in 100 mM phosphate buffered saline solution (PBS) (pH 7.4) from 1 × 10^-10 M to 5 × 10^-6 M with a limit of detection (LOD) of 3.75 × 10^-11 M. In addition, the BSA/AChE-Glu-s-SWCNTs/GCE biosensor showed good repeatability and reproducibility for MP detection. Moreover, the proposed biosensor showed better electrode stability when stored at 4 °C. This new electrochemical biosensor is also exhibited high selectivity and sensitivity for MP, which made it possible to test MP in real strawberry and apple juices. Furthermore, the BSA/AChE-Glu-s-SWCNTs/GCE offered a favourable electron transfer between the acetylthiocholine chloride (ATCl) and electrode interface than BSA/AChE-s-SWCNTs/GCE, s-SWCNTs/GCE and bare GCE.

Science and applications of wafer-scale crystalline carbon nanotube films prepared through controlled vacuum filtration

Carbon nanotubes (CNTs) make an ideal one-dimensional (1D) material platform for the exploration of novel physical phenomena under extremely strong quantum confinement. The 1D character of electrons, phonons and excitons in individual CNTs features extraordinary electronic, thermal and optical properties. Since their discovery in 1991, they have been continuing to attract interest in various disciplines, including chemistry, materials science, physics and engineering. However, the macroscopic manifestation of 1D properties is still limited, despite significant efforts for decades. Recently, a controlled vacuum filtration method has been developed for the preparation of wafer-scale films of crystalline chirality-enriched CNTs, and such films have enabled exciting new fundamental studies and applications. In this review, we will first discuss the controlled vacuum filtration technique, and then summarize recent discoveries in optical spectroscopy studies and optoelectronic device applications using films prepared by this technique.

Advances on Sensors Based on Carbon Nanotubes

Carbon nanotubes have been attracting considerable interest among material scientists, physicists, chemists, and engineers for almost 30 years. Owing to their high aspect ratio, coupled with remarkable mechanical, electronic, and thermal properties, carbon nanotubes have found application in diverse fields. In this review, we will cover the work on carbon nanotubes used for sensing applications. In particular, we will see examples where carbon nanotubes act as main players in devices sensing biomolecules, gas, light or pressure changes. Furthermore, we will discuss how to improve the performance of carbon nanotube-based sensors after proper modification.