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Lee SY, Cho DH, Song SC, Shin J, Hwang J, Park E, Lee SY, Kim S, Lee J, Song C. Nanoscale Three-Dimensional Network Structure of a Mesoporous Particle Unveiled via Adaptive Multidistance Coherent X-ray Tomography. ACS NANO 2023; 17:22488-22498. [PMID: 37851941 DOI: 10.1021/acsnano.3c05977] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/20/2023]
Abstract
Mesoporous nanoparticles provide rich platforms to devise functional materials by customizing the three-dimensional (3D) structures of nanopores. With the pore network as a key tuning parameter, the noninvasive and quantitative characterization of these 3D structures is crucial for the rational design of functional materials. This has prompted researchers to develop versatile nanoprobes with a high penetration power to inspect various specimens sized a few micrometers at nanoscale 3D resolutions. Here, with adaptive phase retrievals on independent data sets with different sampling frequencies, we introduce multidistance coherent X-ray tomography as a noninvasive and quantitative nanoprobe to realize high-resolution 3D imaging of micrometer-sized specimens. The 3D density distribution of an entire mesoporous silica nanoparticle was obtained at 13 nm 3D resolution for quantitative physical and morphological analyses of its 3D pore structure. The morphological features of the whole 3D pore network and pore connectivity were examined to gain insight into the potential functions of the particles. The proposed multidistance tomographic imaging scheme with quantitative structural analyses is expected to advance studies of functional materials by facilitating their structure-based rational design.
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Affiliation(s)
- Sung Yun Lee
- Department of Physics, POSTECH, Pohang 37673, Korea
- Photon Science Center, POSTECH, Pohang 37673, Korea
- Center for Ultrafast Science on Quantum Matter, Max Planck POSTECH Korea Research Initiative, Pohang 37673, Korea
| | - Do Hyung Cho
- Department of Physics, POSTECH, Pohang 37673, Korea
- Photon Science Center, POSTECH, Pohang 37673, Korea
| | - Sung Chan Song
- Center for Ultrafast Science on Quantum Matter, Max Planck POSTECH Korea Research Initiative, Pohang 37673, Korea
- Department of Materials Science and Engineering, POSTECH, Pohang 37673, Korea
| | - Jaeyong Shin
- Department of Physics, POSTECH, Pohang 37673, Korea
- Photon Science Center, POSTECH, Pohang 37673, Korea
- Center for Ultrafast Science on Quantum Matter, Max Planck POSTECH Korea Research Initiative, Pohang 37673, Korea
| | - Junha Hwang
- Department of Physics, POSTECH, Pohang 37673, Korea
- Photon Science Center, POSTECH, Pohang 37673, Korea
- Center for Ultrafast Science on Quantum Matter, Max Planck POSTECH Korea Research Initiative, Pohang 37673, Korea
| | - Eunyoung Park
- Department of Physics, POSTECH, Pohang 37673, Korea
- Photon Science Center, POSTECH, Pohang 37673, Korea
- Center for Ultrafast Science on Quantum Matter, Max Planck POSTECH Korea Research Initiative, Pohang 37673, Korea
| | - Su Yong Lee
- Pohang Accelerator Laboratory, POSTECH, Pohang 37673, Korea
| | - Seongseop Kim
- School of Chemical Engineering, Clean Energy Research Center, Jeonbuk National University, Jeonju 54896, Korea
| | - Jinwoo Lee
- Department of Chemical and Biomolecular Engineering, KAIST, Daejeon 34141, Korea
| | - Changyong Song
- Department of Physics, POSTECH, Pohang 37673, Korea
- Photon Science Center, POSTECH, Pohang 37673, Korea
- Center for Ultrafast Science on Quantum Matter, Max Planck POSTECH Korea Research Initiative, Pohang 37673, Korea
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2
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Li X, Yang J, Sun H, Huang L, Li H, Shi J. Controlled Synthesis and Accurate Doping of Wafer-Scale 2D Semiconducting Transition Metal Dichalcogenides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2305115. [PMID: 37406665 DOI: 10.1002/adma.202305115] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/29/2023] [Revised: 06/24/2023] [Accepted: 07/04/2023] [Indexed: 07/07/2023]
Abstract
2D semiconducting transition metal dichalcogenide (TMDCs) possess atomically thin thickness, a dangling-bond-free surface, flexible band structure, and silicon-compatible feature, making them one of the most promising channels for constructing state-of-the-art field-effect transistors in the post-Moore's era. However, the existing 2D semiconducting TMDCs fall short of meeting the industry criteria for practical applications in electronics due to their small domain size and the lack of an effective approach to modulate intrinsic physical properties. Therefore, it is crucial to prepare and dope 2D semiconducting TMDCs single crystals with wafer size. In this review, the up-to-date progress regarding the wafer-scale growth of 2D semiconducting TMDC polycrystalline and single-crystal films is systematically summarized. The domain orientation control of 2D TMDCs and the seamless stitching of unidirectionally aligned 2D islands by means of substrate design are proposed. In addition, the accurate and uniform doping of 2D semiconducting TMDCs and the effect on electronic device performances are also discussed. Finally, the dominating challenges pertaining to the enhancement of the electronic device performances of TMDCs are emphasized, and further development directions are put forward. This review provides a systematic and in-depth summary of high-performance device applications of 2D semiconducting TMDCs.
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Affiliation(s)
- Xiaohui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Junbo Yang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Hang Sun
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Ling Huang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Hui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Jianping Shi
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
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3
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Gupta JD, Jangra P, Majee BP, Mishra AK. Morphological dependent exciton dynamics and thermal transport in MoSe 2 films. NANOSCALE ADVANCES 2023; 5:2756-2766. [PMID: 37205289 PMCID: PMC10187041 DOI: 10.1039/d3na00164d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/15/2023] [Accepted: 04/11/2023] [Indexed: 05/21/2023]
Abstract
Thermal transport and exciton dynamics of semiconducting transition metal dichalcogenides (TMDCs) play an immense role in next-generation electronic, photonic, and thermoelectric devices. In this work, we synthesize distinct morphologies (snow-like and hexagonal) of a trilayer MoSe2 film over the SiO2/Si substrate via the chemical vapor deposition (CVD) method and investigated their morphological dependent exciton dynamics and thermal transport behaviour for the first time to the best of our knowledge. Firstly, we studied the role of spin-orbit and interlayer couplings both theoretically as well as experimentally via first-principles density functional theory and photoluminescence study, respectively. Further, we demonstrate morphological dependent thermal sensitive exciton response at low temperatures (93-300 K), showing more dominant defect-bound excitons (EL) in snow-like MoSe2 compared to hexagonal morphology. We also examined the morphological-dependent phonon confinement and thermal transport behaviour using the optothermal Raman spectroscopy technique. To provide insights into the nonlinear temperature-dependent phonon anharmonicity, a semi-quantitative model comprising volume and temperature effects was used, divulging the dominance of three-phonon (four-phonon) scattering processes for thermal transport in hexagonal (snow-like) MoSe2. The morphological impact on thermal conductivity (ks) of MoSe2 has also been examined here by performing the optothermal Raman spectroscopy, showing ks ∼ 36 ± 6 W m-1 K-1 for snow-like and ∼41 ± 7 W m-1 K-1 for hexagonal MoSe2. Our research will contribute to the understanding of thermal transport behaviour in different morphologies of semiconducting MoSe2, finding suitability for next-generation optoelectronic devices.
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Affiliation(s)
- Jay Deep Gupta
- School of Materials Science and Technology, Indian Institute of Technology (Banaras Hindu University) Varanasi-221005 India
| | - Priyanka Jangra
- School of Materials Science and Technology, Indian Institute of Technology (Banaras Hindu University) Varanasi-221005 India
| | - Bishnu Pada Majee
- School of Materials Science and Technology, Indian Institute of Technology (Banaras Hindu University) Varanasi-221005 India
| | - Ashish Kumar Mishra
- School of Materials Science and Technology, Indian Institute of Technology (Banaras Hindu University) Varanasi-221005 India
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4
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Xiao Y, Xiong C, Chen MM, Wang S, Fu L, Zhang X. Structure modulation of two-dimensional transition metal chalcogenides: recent advances in methodology, mechanism and applications. Chem Soc Rev 2023; 52:1215-1272. [PMID: 36601686 DOI: 10.1039/d1cs01016f] [Citation(s) in RCA: 18] [Impact Index Per Article: 18.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/06/2023]
Abstract
Together with the development of two-dimensional (2D) materials, transition metal dichalcogenides (TMDs) have become one of the most popular series of model materials for fundamental sciences and practical applications. Due to the ever-growing requirements of customization and multi-function, dozens of modulated structures have been introduced in TMDs. In this review, we present a systematic and comprehensive overview of the structure modulation of TMDs, including point, linear and out-of-plane structures, following and updating the conventional classification for silicon and related bulk semiconductors. In particular, we focus on the structural characteristics of modulated TMD structures and analyse the corresponding root causes. We also summarize the recent progress in modulating methods, mechanisms, properties and applications based on modulated TMD structures. Finally, we demonstrate challenges and prospects in the structure modulation of TMDs and forecast potential directions about what and how breakthroughs can be achieved.
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Affiliation(s)
- Yao Xiao
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Chengyi Xiong
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Miao-Miao Chen
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Shengfu Wang
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Lei Fu
- The Institute for Advanced Studies (IAS), Wuhan University, Wuhan 430072, P. R. China. .,College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, P. R. China.
| | - Xiuhua Zhang
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
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5
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Madoune Y, Yang D, Ahmed Y, Al-Makeen MM, Huang H. PVD growth of spiral pyramid-shaped WS 2 on SiO 2/Si driven by screw dislocations. Front Chem 2023; 11:1132567. [PMID: 36936529 PMCID: PMC10022673 DOI: 10.3389/fchem.2023.1132567] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/27/2022] [Accepted: 02/22/2023] [Indexed: 03/06/2023] Open
Abstract
Atomically thin layered transition metal dichalcogenides (TMDs), such as MoS2 and WS2, have been getting much attention recently due to their interesting electronic and optoelectronic properties. Especially, spiral TMDs provide a variety of candidates for examining the light-matter interaction resulting from the broken inversion symmetry, as well as the potential new utilization in functional optoelectronic, electromagnetic and nanoelectronics devices. To realize their potential device applications, it is desirable to achieve controlled growth of these layered nanomaterials with a tunable stacking. Here, we demonstrate the Physical Vapor Deposition (PVD) growth of spiral pyramid-shaped WS2 with ∼200 μ m in size and the interesting optical properties via AFM and Raman spectroscopy. By controlling the precursors concentration and changing the initial nucleation rates in PVD growth, WS2 in different nanoarchitectures can be obtained. We discuss the growth mechanism for these spiral-patterned WS2 nanostructures based on the screw dislocations. This study provides a simple, scalable approach of screw dislocation-driven (SDD) growth of distinct TMD nanostructures with varying morphologies, and stacking.
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Affiliation(s)
- Yassine Madoune
- Hunan Key Laboratory of Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, China
- *Correspondence: Yassine Madoune,
| | - DingBang Yang
- Hunan Key Laboratory of Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, China
| | - Yameen Ahmed
- Department of Electrical and Computer Engineering, University of Victoria, Victoria, BC, Canada
| | - Mansour M. Al-Makeen
- Hunan Key Laboratory of Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, China
| | - Han Huang
- Hunan Key Laboratory of Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, China
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6
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Yang SJ, Choi MY, Kim CJ. Engineering Grain Boundaries in Two-Dimensional Electronic Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2203425. [PMID: 35777352 DOI: 10.1002/adma.202203425] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/15/2022] [Revised: 06/30/2022] [Indexed: 06/15/2023]
Abstract
Engineering the boundary structures in 2D materials provides an unprecedented opportunity to program the physical properties of the materials with extensive tunability and realize innovative devices with advanced functionalities. However, structural engineering technology is still in its infancy, and creating artificial boundary structures with high reproducibility remains difficult. In this review, various emergent properties of 2D materials with different grain boundaries, and the current techniques to control the structures, are introduced. The remaining challenges for scalable and reproducible structure control and the outlook on the future directions of the related techniques are also discussed.
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Affiliation(s)
- Seong-Jun Yang
- Center for Epitaxial van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, Gyeongbuk, 37673, Republic of Korea
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, 37673, Republic of Korea
| | - Min-Yeong Choi
- Center for Epitaxial van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, Gyeongbuk, 37673, Republic of Korea
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, 37673, Republic of Korea
| | - Cheol-Joo Kim
- Center for Epitaxial van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, Gyeongbuk, 37673, Republic of Korea
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, 37673, Republic of Korea
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7
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Rajarapu R, Barman PK, Yadav R, Biswas R, Devaraj M, Poudyal S, Biswal B, Laxmi V, Pradhan GK, Raghunathan V, Nayak PK, Misra A. Pulsed Carrier Gas Assisted High-Quality Synthetic 3 R-Phase Sword-like MoS 2: A Versatile Optoelectronic Material. ACS NANO 2022; 16:21366-21376. [PMID: 36468945 DOI: 10.1021/acsnano.2c09673] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Synthesizing a material with the desired polymorphic phase in a chemical vapor deposition (CVD) process requires a delicate balance among various thermodynamic variables. Here, we present a methodology to synthesize rhombohedral (3R)-phase MoS2 in a well-defined sword-like geometry having lengths up to 120 μm, uniform width of 2-3 μm and thickness of 3-7 nm by controlling the carrier gas flow dynamics from continuous mode to pulsed mode during the CVD growth process. Characteristic signatures such as high degree of circular dichroism (∼58% at 100 K), distinct evolution of low-frequency Raman peaks and increasing intensity of second harmonic signals with increasing number of layers conclusively establish the 3R-phase of the material. A high value (∼844 pm/V) of second-order susceptibility for few-layer-thick MoS2 swords signifies the potential of MoS2 to serve as an atomically thin nonlinear medium. A field effect mobility of 40 cm2/V-s and Ion/Ioff ratio of ∼106 further confirm the electronic-grade standard of this 3R-phase MoS2. These findings are significant for the development of emerging quantum electronic devices utilizing valley-based physics and nonlinear optical phenomena in layered materials.
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Affiliation(s)
- Ramesh Rajarapu
- Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India
- 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai-600036, India
| | - Prahalad Kanti Barman
- Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India
- 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai-600036, India
| | - Renu Yadav
- Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India
- 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai-600036, India
| | - Rabindra Biswas
- Department of Electrical Communication Engineering, Indian Institution of Science, Bangalore- 560012, India
| | - Manikandan Devaraj
- Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India
- Micro Nano and Bio-Fluidics Group, Indian Institute of Technology Madras, Chennai-600036, India
| | - Saroj Poudyal
- Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India
- 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai-600036, India
| | - Bubunu Biswal
- Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India
- 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai-600036, India
| | - Vijay Laxmi
- Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India
- 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai-600036, India
| | - Gopal K Pradhan
- Department of Physics, School of Applied Sciences, KIIT Deemed to be University, Bhubaneswar, Odisha-751024, India
| | - Varun Raghunathan
- Department of Electrical Communication Engineering, Indian Institution of Science, Bangalore- 560012, India
| | - Pramoda K Nayak
- Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India
- 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai-600036, India
- Micro Nano and Bio-Fluidics Group, Indian Institute of Technology Madras, Chennai-600036, India
| | - Abhishek Misra
- Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India
- 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai-600036, India
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8
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Yang S, Wu J, Wang C, Yan H, Han L, Feng J, Zhang B, Li D, Yu G, Luo B. Molten-droplet-driven growth of MoS 2 flakes with controllable morphology transition for hydrogen evolution reactions. Dalton Trans 2022; 51:13351-13360. [PMID: 35984420 DOI: 10.1039/d2dt02066a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The controllable fabrication of two-dimensional transition-metal dichalcogenides (2D TMDs) and a deep understanding of the corresponding process mechanisms are of fundamental importance for their further applications. In this study, the molten-droplet-driven (MDD) growth of MoS2 based on a Na-Mo-O molten-salt chemical vapor deposition (CVD) method is demonstrated via temperature-dependent dispersion and spreading of droplets on a surface, yielding MoS2 flakes with morphology transition from compact triangles to fractal dendrites with the increase in temperature. By building up the dependence between the formed morphologies of grown MoS2 flakes and the corresponding kinetics during successive growth processes, it was found that the wetting-driven force, which is governed by interface free energies (surface tension) of molten droplets, would largely determine the driven movement of the droplet, and then the formation of different morphologies. Finally, based on these MoS2 flakes, a systematic improvement of the hydrogen evolution reaction (HER) was demonstrated in accordance with the evolution of morphologies from compact to fractal. This study presents an important advance in understanding the growth mechanisms related to the molten-salt-assisted CVD fabrication of 2D TMDs and provides a facile method for tailoring the growth and application of 2D TMDs with controllably trimmed morphologies.
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Affiliation(s)
- Shuai Yang
- College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387, P. R. China.
| | - Jing Wu
- College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387, P. R. China.
| | - Chao Wang
- College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387, P. R. China.
| | - Hong Yan
- College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387, P. R. China.
| | - Luoqiao Han
- College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387, P. R. China.
| | - Jianmin Feng
- College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387, P. R. China.
| | - Bo Zhang
- College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387, P. R. China.
| | - Dejun Li
- College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387, P. R. China.
| | - Gui Yu
- Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China. .,School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Birong Luo
- College of Physics and Materials Science, Tianjin Normal University, Tianjin 300387, P. R. China.
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9
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Liu X, Jiang X, Shao G, Xiang H, Li Z, Jin Y, Chen Y, Jiang H, Li H, Shui J, Feng Y, Liu S. Activating the Electrocatalysis of MoS 2 Basal Plane for Hydrogen Evolution via Atomic Defect Configurations. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2200601. [PMID: 35652257 DOI: 10.1002/smll.202200601] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/27/2022] [Revised: 03/13/2022] [Indexed: 06/15/2023]
Abstract
Point defects of heteroatoms and vacancies can activate the inert basal plane of molybdenum sulfide (MoS2 ) to improve its performance on catalyzing the hydrogen evolution reaction (HER). However, the synergy between heteroatoms and vacancies is still unclear. Here, a chemical vapor deposition-assisted in situ vanadium (V) doping method is used to synthesize monolayer MoS2 with abundant and tunable vacancies and V-dopants in the lattice. Ten delicate defect configurations are prepared to provide a complex system for the relationship investigation between microstructure and catalytic performance. The combination of on-chip electrochemical tests and theoretical calculations indicates that the HER performance greatly depends on the type and amount of defect configurations. The optimal configuration is that three V atoms are aggregated and accompanied by abundant sulfur vacancies, in which, H atoms directly interact with Mo and V atoms to form the most stable metal-bridge structure. The on-chip measurements also confirm that the sample with high concentrations of this type of defect configuration exhibits the best catalytic performance, indicating the efficient synergy in the optimal configuration. The revealed effects of defect configurations are expected to inspire the design and regulation of high-efficiency 2D catalysts.
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Affiliation(s)
- Xiao Liu
- Institute of Chemical Biology and Nanomedicine (ICBN), College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Xingxing Jiang
- Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, 410082, P. R. China
| | - Gonglei Shao
- Institute of Chemical Biology and Nanomedicine (ICBN), College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Haiyan Xiang
- Institute of Chemical Biology and Nanomedicine (ICBN), College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Zhiwei Li
- Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, 410082, P. R. China
| | - Yuanyuan Jin
- Institute of Chemical Biology and Nanomedicine (ICBN), College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Yang Chen
- Institute of Chemical Biology and Nanomedicine (ICBN), College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Huili Jiang
- Institute of Chemical Biology and Nanomedicine (ICBN), College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Huimin Li
- Institute of Chemical Biology and Nanomedicine (ICBN), College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Jianglan Shui
- Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, 410082, P. R. China
| | - Yexin Feng
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, P. R. China
| | - Song Liu
- Institute of Chemical Biology and Nanomedicine (ICBN), College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
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10
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Yao B, Li R, Zhang C, Zhou Z, Fu Z, Huang X, Yuan G, Xu J, Gao L. Tuning the morphology of 2D transition metal chalcogenides via oxidizing conditions. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:195001. [PMID: 35158340 DOI: 10.1088/1361-648x/ac54e5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/10/2022] [Accepted: 02/14/2022] [Indexed: 06/14/2023]
Abstract
Two-dimensional transition metal chalcogenides (TMCs) are emerging as an intriguing platform to realize nascent properties in condensed matter physics, materials science and device engineering. Controllable growing of TMCs becomes increasingly important, especially for the layer number, doping, and morphology. Here, we successfully tune the morphology of MoS2, MoSe2, WS2and WSe2, from homogenous films to individual single crystalline grains only via changing the oxidizing growth conditions. The oxidization degrees are determined by the oxygen that adsorbed on substrates and the oxygen concentrations in reaction gas together. We find the homogenous films are easily formed under the reductive conditions, triangular grains prefer the weak oxidizing conditions, and medium oxidizing conditions bring in dendritic grains with higher oxygen doping and inhomogenous photoluminescence intensities from edge to interior regions shown in the dendritic grains. These growth rules under different oxidizing conditions are easily generalized to other TMCs, which also show potential for growing specific TMCs with designed oxygen doping levels.
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Affiliation(s)
- Bing Yao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Rongsheng Li
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Chenxi Zhang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Zhenjia Zhou
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Zihao Fu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Xianlei Huang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Guowen Yuan
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Jie Xu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Libo Gao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
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11
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Kang S, Eshete YA, Lee S, Won D, Im S, Lee S, Cho S, Yang H. Bandgap modulation in the two-dimensional core-shell-structured monolayers of WS 2. iScience 2022; 25:103563. [PMID: 34988404 PMCID: PMC8693456 DOI: 10.1016/j.isci.2021.103563] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/05/2021] [Revised: 11/15/2021] [Accepted: 12/01/2021] [Indexed: 11/25/2022] Open
Abstract
Tungsten disulfide (WS2) has tunable bandgaps, which are required for diverse optoelectronic device applications. Here, we report the bandgap modulation in WS2 monolayers with two-dimensional core-shell structures formed by unique growth mode in chemical vapor deposition (CVD). The core-shell structures in our CVD-grown WS2 monolayers exhibit contrasts in optical images, Raman, and photoluminescence spectroscopy. The strain and doping effects in the WS2, introduced by two different growth processes, generate PL peaks at 1.83 eV (at the core domain) and 1.98 eV (at the shell domain), which is distinct from conventional WS2 with a primary PL peak at 2.02 eV. Our density functional theory (DFT) calculations explain the modulation of the optical bandgap in our core-shell-structured WS2 monolayers by the strain, accompanying a direct-to-indirect bandgap transition. Thus, the core-shell-structured WS2 monolayers provide a practical method to fabricate lateral heterostructures with different optical bandgaps, which are required for optoelectronic applications.
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Affiliation(s)
- Seohui Kang
- Department of Chemical Engineering and Materials Science, Graduate Program in System Health Science and Engineering, Ewha Womans University, Seoul 03760, Republic of Korea
| | - Yonas Assefa Eshete
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Sujin Lee
- Department of Chemical Engineering and Materials Science, Graduate Program in System Health Science and Engineering, Ewha Womans University, Seoul 03760, Republic of Korea
| | - Dongyeun Won
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Saemi Im
- Department of Chemical Engineering and Materials Science, Graduate Program in System Health Science and Engineering, Ewha Womans University, Seoul 03760, Republic of Korea
| | - Sangheon Lee
- Department of Chemical Engineering and Materials Science, Graduate Program in System Health Science and Engineering, Ewha Womans University, Seoul 03760, Republic of Korea
| | - Suyeon Cho
- Department of Chemical Engineering and Materials Science, Graduate Program in System Health Science and Engineering, Ewha Womans University, Seoul 03760, Republic of Korea
| | - Heejun Yang
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
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12
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Guo S, Chen Z, Weller D, Wang X, Ding C, Wang Y, Liu R. Toward High-Performance Self-Driven Photodetectors via Multistacking Van der Waals Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2021; 13:56438-56445. [PMID: 34784189 DOI: 10.1021/acsami.1c14058] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The unique optoelectronic properties of layered van der Waals (vdW) heterostructures open up exciting opportunities for high-performance photodetectors. Self-driven photodetectors are desirable for reducing power consumption and minimizing the device size. Here, a semiconductor-insulator-semiconductor-type multistacking WSe2/graphene/h-BN/MoS2 vdW heterostructure is demonstrated to realize an enhanced self-powered photodetector with a high on-off current ratio of about 1.2 × 105 and a high photoresponsivity of 3.6 A/W without applying bias, which is the highest photoresponsivity ever reported for self-powered photodetectors. Because of the difference in the Fermi level, a built-in electrical field is formed at the WSe2/graphene junction, where the photoexcited electrons and holes can be efficiently separated and the carriers can easily tunnel through the MoS2/h-BN junction driven by the enhanced potential. Therefore, the enhanced self-powered photodetection is attributable to highly efficient carrier tunneling through large h-BN electron barriers. By comparison, when the stacking sequence is changed to make WSe2/MoS2 p-n heterojunctions lay on graphene/h-BN, the self-powered photocurrent is still generated because of the type-II band alignment, which exhibits lower but still relevant values with a light on/off ratio of ∼8 × 103 and a photoresponsivity of ∼2.39 A/W. The efficient enhancement demonstrates that multistacking heterostructures significantly elevate the performance of self-powered photodetectors, providing a feasible route to develop high-performance self-powered optoelectronic devices and extend their applications in integrated optoelectronic systems.
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Affiliation(s)
- Shuai Guo
- Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
- Department of Optoelectronic Science, Harbin Institute of Technology at Weihai, Weihai 264209, P. R. China
| | - Zhuo Chen
- Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Dieter Weller
- Faculty of Physics and Center for Nanointegration (CENIDE), University of Duisburg-Essen, Lotharstr. 1, Duisburg 47057, Germany
| | - Xianshuang Wang
- Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Chunjie Ding
- Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Yingying Wang
- Department of Optoelectronic Science, Harbin Institute of Technology at Weihai, Weihai 264209, P. R. China
| | - Ruibin Liu
- Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
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13
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Kim J, Seung H, Kang D, Kim J, Bae H, Park H, Kang S, Choi C, Choi BK, Kim JS, Hyeon T, Lee H, Kim DH, Shim S, Park J. Wafer-Scale Production of Transition Metal Dichalcogenides and Alloy Monolayers by Nanocrystal Conversion for Large-Scale Ultrathin Flexible Electronics. NANO LETTERS 2021; 21:9153-9163. [PMID: 34677071 DOI: 10.1021/acs.nanolett.1c02991] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenide (TMD) layers are unit-cell thick materials with tunable physical properties according to their size, morphology, and chemical composition. Their transition of lab-scale research to industrial-scale applications requires process development for the wafer-scale growth and scalable device fabrication. Herein, we report on a new type of atmospheric pressure chemical vapor deposition (APCVD) process that utilizes colloidal nanoparticles as process-scalable precursors for the wafer-scale production of TMD monolayers. Facile uniform distribution of nanoparticle precursors on the entire substrate leads to the wafer-scale uniform synthesis of TMD monolayers with the controlled size and morphology. Composition-controlled TMD alloy monolayers with tunable bandgaps can be produced by simply mixing dual nanoparticle precursor solutions in the desired ratio. We also demonstrate the fabrication of ultrathin field-effect transistors and flexible electronics with uniformly controlled performance by using TMD monolayers.
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Affiliation(s)
- Jihoon Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
| | - Hyojin Seung
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
| | - Dohun Kang
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
| | - Joodeok Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
| | - Hyeonhu Bae
- Department of Physics, Konkuk University, Seoul 05029, Republic of Korea
| | - Hayoung Park
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
| | - Sungsu Kang
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
| | - Changsoon Choi
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
| | - Back Kyu Choi
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
| | - Ji Soo Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
| | - Taeghwan Hyeon
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
| | - Hoonkyung Lee
- Department of Physics, Konkuk University, Seoul 05029, Republic of Korea
| | - Dae-Hyeong Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Sangdeok Shim
- Department of Chemistry, Sunchon National University, Sunchon 57922, Republic of Korea
| | - Jungwon Park
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Republic of Korea
- Institute of Engineering Research, Seoul National University, Seoul 08826, Republic of Korea
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14
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Wu R, Ou X, Zhang L, Wang F, Liu L. Interfacial Interactions within Amyloid Protein Corona Based on 2D MoS 2 Nanosheets. Chembiochem 2021; 23:e202100581. [PMID: 34708897 DOI: 10.1002/cbic.202100581] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/28/2021] [Indexed: 12/21/2022]
Abstract
The interfacial interaction within the amyloid protein corona based on MoS2 nanomaterial is crucial, both for understanding the biological effects of MoS2 nanomaterial and the evolution of amyloid diseases. The specific nano-bio interface phenomenon of human islet amyloid peptide (hIAPP) and MoS2 nanosheet was investigated by using theoretical and experimental methods. The MoS2 nanosheet enables the attraction of hIAPP monomer, dimer, and oligomer on its surface through van der Waals forces. Especially, the means of interaction between two hIAPP peptides might be changed by MoS2 nanosheet. In addition, it is interesting to find that the hIAPP oligomer can stably interact with the MoS2 nanosheet in one unique "standing" binding mode with an entire exposed β-sheet surface. All the interaction modes on the surface of MoS2 nanosheet can be the essence of amyloid protein corona that may provide the venue to facilitate the fibrillation of hIAPP proteins. Further, it was verified experimentally that MoS2 nanosheets could accelerate the fibrillation of hIAPP at a certain concentration mainly based on the newly formed nano-bio interface. In general, our results provide insight into the molecular interaction mechanism of the nano-bio interface within the amyloid protein corona, and shed light on the pathway of amyloid protein aggregation that is related to the evolution of amyloid diseases.
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Affiliation(s)
- Rongrong Wu
- Institute for Advanced Materials, Jiangsu University, Xuefu Road 301, Zhenjiang, 212000, P. R. China
| | - Xinwen Ou
- Department of Chemistry, The Hong Kong University of Science and Technology Clear Water Bay, Kowloon, Hong Kong, 999077, P. R. China
| | - Liwei Zhang
- Institute for Advanced Materials, Jiangsu University, Xuefu Road 301, Zhenjiang, 212000, P. R. China
| | - Fenghua Wang
- Institute for Advanced Materials, Jiangsu University, Xuefu Road 301, Zhenjiang, 212000, P. R. China
| | - Lei Liu
- Institute for Advanced Materials, Jiangsu University, Xuefu Road 301, Zhenjiang, 212000, P. R. China
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15
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Liang F, Zhan L, Guo T, Wu X, Chu J. CVD-Grown 2D Nonlayered NiSe as a Broadband Photodetector. MICROMACHINES 2021; 12:1066. [PMID: 34577710 PMCID: PMC8471629 DOI: 10.3390/mi12091066] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/17/2021] [Revised: 08/28/2021] [Accepted: 08/30/2021] [Indexed: 01/28/2023]
Abstract
Two-dimensional (2D) materials have expansive application prospects in electronics and optoelectronics devices due to their unique physical and chemical properties. 2D layered materials are easy to prepare due to the layered crystal structure and the interlayer van der Waals combination. However, the 2D nonlayered materials are difficult to prepare due to the nonlayered crystal structure and the combination of interlayer isotropic chemical bonds, resulting in limited research on 2D nonlayered materials with broad characteristics. Here, a 2D nonlayered NiSe material has been synthesized by a chemical vapor deposition method. The atomic force microscopy study shows that the grown NiSe with a thin thickness. Energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy and transmission electron microscopy results demonstrate the uniformity and high quality of NiSe flakes. The NiSe based photodetector realizes the laser response to 830 nm and 10.6 μm and the maximum responsivity is ~6.96 A/W at room temperature. This work lays the foundation for the preparation of 2D nonlayered materials and expands the application of 2D nonlayered materials in optoelectronics fields.
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Affiliation(s)
- Fang Liang
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai 200241, China; (F.L.); (L.Z.); (T.G.)
| | - Liangliang Zhan
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai 200241, China; (F.L.); (L.Z.); (T.G.)
| | - Tianyu Guo
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai 200241, China; (F.L.); (L.Z.); (T.G.)
| | - Xing Wu
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai 200241, China; (F.L.); (L.Z.); (T.G.)
| | - Junhao Chu
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai 200241, China; (F.L.); (L.Z.); (T.G.)
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China
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16
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Cardoso Ofredi Maia F, Maciel IO, Vasconcelos Pazzini Massote D, Archanjo BS, Legnani C, Quirino WG, Carozo Gois de Oliveira V, Fragneaud B. Defect activated optical Raman modes in single layer MoSe 2. NANOTECHNOLOGY 2021; 32:465302. [PMID: 34311447 DOI: 10.1088/1361-6528/ac17c6] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/12/2021] [Accepted: 07/23/2021] [Indexed: 06/13/2023]
Abstract
In the last decade, transition metal dichalcogenides (TMDs) have been intensively synthesized/studied thus linking their morphological aspect to their physical properties, and consequently leading to the understanding of the possible benefits of defects in such materials. Nevertheless, for future applications, quantifying and identifying defects in TMDs is still a milestone to reach in order to better employ these materials in optoelectronic devices. Raman Spectroscopy has been successfully employed in graphene to quantify punctual or line defects. In this paper, we bombarded monolayer MoSe2with He ions and found out the existence of three defect activated Raman bands around 250-300 cm-1. Density functional theory calculations were employed to obtain the electronic and phonon dispersion bands, making it possible to infer that these bands arise from inter-valley Raman double resonance processes. Interestingly, the same punctual defect model, that allows one to predict the defect concentration at which graphene starts to become amorphous, also works for TMDs. Hence, this work opens the door to the macroscopic quantification of defects in TMDs, which is essential for technological applications.
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Affiliation(s)
| | - Indhira Oliveira Maciel
- Physics Department, Federal University of Juiz de Fora (UFJF), Juiz de Fora, Minas Gerais, Brazil
| | | | - Braulio Soares Archanjo
- Materials Metrology Division, National Institute of Metrology, Quality, and Technology (INMETRO), Duque de Caxias, Rio de Janeiro, Brazil
| | - Cristiano Legnani
- Physics Department, Federal University of Juiz de Fora (UFJF), Juiz de Fora, Minas Gerais, Brazil
| | - Welber Gianini Quirino
- Physics Department, Federal University of Juiz de Fora (UFJF), Juiz de Fora, Minas Gerais, Brazil
| | | | - Benjamin Fragneaud
- Physics Department, Federal University of Juiz de Fora (UFJF), Juiz de Fora, Minas Gerais, Brazil
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17
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Zang L, Chen L, Tan D, Cao X, Sun N, Jiang C. Research on Multi‐morphology Evolution of MoS
2
in Chemical Vapor Deposition. ChemistrySelect 2021. [DOI: 10.1002/slct.202101843] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Lingyu Zang
- School of Mechanical Engineering Dalian University of Technology Dalian 116024 China
| | - Long Chen
- School of Mechanical Engineering Dalian University of Technology Dalian 116024 China
| | - Dongchen Tan
- School of Mechanical Engineering Dalian University of Technology Dalian 116024 China
| | - Xuguang Cao
- School of Mechanical Engineering Dalian University of Technology Dalian 116024 China
| | - Nan Sun
- School of Mechanical Engineering Dalian University of Technology Dalian 116024 China
| | - Chengming Jiang
- School of Mechanical Engineering Dalian University of Technology Dalian 116024 China
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18
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Miller RC, Geiss RH, Prieto AL. Olivine Crystal Structure-Directed Twinning in Iron Germanium Sulfide (Fe 2GeS 4) Nanoparticles. ACS NANO 2021; 15:11981-11991. [PMID: 34157224 DOI: 10.1021/acsnano.1c03237] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Understanding the microstructure of complex crystal structures is critical for controlling material properties in next-generation devices. Synthetic reports of twinning in bulk and nanostructured crystals with detailed crystallographic characterization are integral for advancing systematic studies of twinning phenomena. Herein, we report a synthetic route to controllably twinned olivine nanoparticles. Microstructural characterization of Fe2GeS4 nanoparticles via electron microscopy (imaging, diffraction, and crystallographic analysis) demonstrates the formation of triplets of twins, or trillings. We establish synthetic control over the particle crystallinity and crystal growth. We describe the geometrical basis for twin formation, hexagonal pseudosymmetry of the orthorhombic lattice, and rank all of the reported olivine compounds according to this favorability to form twins. The work in this study highlights an area ripe for future exploration with respect to the advancement of solution-phase synthetic approaches that can control microstructure in compositionally complex, technologically relevant structures. Finally, we discuss the potential implications for olivine properties and performance in various applications.
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Affiliation(s)
- Rebecca C Miller
- Department of Chemistry, Colorado State University, Fort Collins, Colorado 80523, United States
| | - Roy H Geiss
- Department of Chemistry, Colorado State University, Fort Collins, Colorado 80523, United States
| | - Amy L Prieto
- Department of Chemistry, Colorado State University, Fort Collins, Colorado 80523, United States
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19
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Park JH, Lu AY, Shen PC, Shin BG, Wang H, Mao N, Xu R, Jung SJ, Ham D, Kern K, Han Y, Kong J. Synthesis of High-Performance Monolayer Molybdenum Disulfide at Low Temperature. SMALL METHODS 2021; 5:e2000720. [PMID: 34927911 DOI: 10.1002/smtd.202000720] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/13/2020] [Revised: 11/04/2020] [Indexed: 06/14/2023]
Abstract
The large-area synthesis of high-quality MoS2 plays an important role in realizing industrial applications of optoelectronics, nanoelectronics, and flexible devices. However, current techniques for chemical vapor deposition (CVD)-grown MoS2 require a high synthetic temperature and a transfer process, which limits its utilization in device fabrications. Here, the direct synthesis of high-quality monolayer MoS2 with the domain size up to 120 µm by metal-organic CVD (MOCVD) at a temperature of 320 °C is reported. Owing to the low-substrate temperature, the MOCVD-grown MoS2 exhibits low impurity doping and nearly unstrained properties on the growth substrate, demonstrating enhanced electronic performance with high electron mobility of 68.3 cm2 V-1 s-1 at room temperature. In addition, by tuning the precursor ratio, a better understanding of the MoS2 growth process via a geometric model of the MoS2 flake shape, is developed, which can provide further guidance for the synthesis of 2D materials.
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Affiliation(s)
- Ji-Hoon Park
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Ang-Yu Lu
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Pin-Chun Shen
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Bong Gyu Shin
- Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569, Stuttgart, Germany
| | - Haozhe Wang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Nannan Mao
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Renjing Xu
- School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 02138, USA
| | - Soon Jung Jung
- Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569, Stuttgart, Germany
| | - Donhee Ham
- School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 02138, USA
| | - Klaus Kern
- Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569, Stuttgart, Germany
- Institut de Physique, École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland
| | - Yimo Han
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA
| | - Jing Kong
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
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20
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Jia Z, Wang W, Li Z, Sun R, Zhou S, Deepak FL, Su C, Li Y, Wang Z. Morphology-Tunable Synthesis of Intrinsic Room-Temperature Ferromagnetic γ-Fe 2O 3 Nanoflakes. ACS APPLIED MATERIALS & INTERFACES 2021; 13:24051-24061. [PMID: 33999608 DOI: 10.1021/acsami.1c05342] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Intrinsic two-dimensional (2D) magnetic materials with room-temperature ferromagnetism and air stability are highly desirable for spintronic applications. However, the experimental observations of such 2D or ultrathin ferromagnetic materials are rarely reported owing to the scarcity of these materials in nature and for the intricacy in their synthesis. Here, we report a successful controllable growth of ultrathin γ-Fe2O3 nanoflakes with a variety of morphologies tunable by the growth temperature alone using a facile chemical vapor deposition method and demonstrate that all ultrathin nanoflakes still show intrinsic room-temperature ferromagnetism and a semiconducting nature. The γ-Fe2O3 nanoflakes epitaxially grown on α-Al2O3 substrates take a triangular shape at low temperature and develop gradually in lateral size, forming eventually a large-scale γ-Fe2O3 thin film as the growth time increases due to a thermodynamic control process. The morphology of the nanoflakes could be tuned from triangular to stellated, petaloid, and dendritic crystalloids in sequence with the rise of precursor temperature, revealing a growth process from thermodynamically to kinetically dominated control. Moreover, the petaloid and dendritic nanoflakes exhibit enhanced coercivity compared with the triangular and stellated nanoflakes, and all the nanoflakes with diverse shapes possess differing electrical conductivity. The findings of such ultrathin, air-stable, and room-temperature ferromagnetic γ-Fe2O3 nanoflakes with tunable shape and multifunctionality may offer guidance in synthesizing other non-layered magnetic materials for next-generation electronic and spintronic devices.
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Affiliation(s)
- Zhiyan Jia
- International Collaborative Laboratory of 2D Materials for Optoelectronic Science and Technology of Ministry of Education, Engineering Technology Research Center for 2D Materials Information Functional Devices and Systems of Guangdong Province, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
- International Iberian Nanotechnology Laboratory (INL), Avenida Mestre José Veiga, Braga 4715-330, Portugal
| | - Wenjie Wang
- Department of Applied Physics, China Agricultural University, Beijing 100080, China
| | - Zichao Li
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Bautzner Landstrasse 400, D-01328 Dresden 01328, Germany
| | - Rong Sun
- International Iberian Nanotechnology Laboratory (INL), Avenida Mestre José Veiga, Braga 4715-330, Portugal
| | - Shengqiang Zhou
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Bautzner Landstrasse 400, D-01328 Dresden 01328, Germany
| | - Francis Leonard Deepak
- International Iberian Nanotechnology Laboratory (INL), Avenida Mestre José Veiga, Braga 4715-330, Portugal
| | - Chenliang Su
- International Collaborative Laboratory of 2D Materials for Optoelectronic Science and Technology of Ministry of Education, Engineering Technology Research Center for 2D Materials Information Functional Devices and Systems of Guangdong Province, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
| | - Ying Li
- International Collaborative Laboratory of 2D Materials for Optoelectronic Science and Technology of Ministry of Education, Engineering Technology Research Center for 2D Materials Information Functional Devices and Systems of Guangdong Province, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
- International Iberian Nanotechnology Laboratory (INL), Avenida Mestre José Veiga, Braga 4715-330, Portugal
| | - Zhongchang Wang
- International Iberian Nanotechnology Laboratory (INL), Avenida Mestre José Veiga, Braga 4715-330, Portugal
- School of Materials and Energy, Southwest University, Chongqing 400715, China
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21
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Xu J, Srolovitz DJ, Ho D. The Adatom Concentration Profile: A Paradigm for Understanding Two-Dimensional MoS 2 Morphological Evolution in Chemical Vapor Deposition Growth. ACS NANO 2021; 15:6839-6848. [PMID: 33750113 DOI: 10.1021/acsnano.0c10474] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The two-dimensional (2D) transition metal dichalcogenide (TMD) MoS2 possesses many intriguing electronic and optical properties. Potential technological applications have focused much attention on tuning MoS2 properties through control of its morphologies during growth. In this paper, we present a unified spatial-temporal model for the growth of MoS2 crystals with a full spectrum of shapes from triangles, concave triangles, three-point stars, to dendrites through the concept of the adatom concentration profile (ACP). We perform a series of chemical vapor deposition (CVD) experiments controlling adatom concentration on the substrate and growth temperature and present a method for experimentally measuring the ACP in the vicinity of growing islands. We apply a phase-field model of growth that explicitly considers similar variables (adatom concentration, adatom diffusion, and noise effects) and cross-validate the simulations and experiments through the ACP and island morphologies as a function of physically controllable variables. Our calculations reproduce the experimental observations with high fidelity. The ACP is an alternative paradigm to conceptualize the growth of crystals through time, which is expected to be instrumental in guiding the rational shape engineering of MoS2 crystals.
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Affiliation(s)
- Jiangang Xu
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong, China
| | - David J Srolovitz
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong, China
| | - Derek Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong, China
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22
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Wang J, Han M, Wang Q, Ji Y, Zhang X, Shi R, Wu Z, Zhang L, Amini A, Guo L, Wang N, Lin J, Cheng C. Strained Epitaxy of Monolayer Transition Metal Dichalcogenides for Wrinkle Arrays. ACS NANO 2021; 15:6633-6644. [PMID: 33819027 DOI: 10.1021/acsnano.0c09983] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Wrinkling two-dimensional (2D) transition metal dichalcogenides (TMDCs) provides a mechanism to adjust the physical and chemical properties as per need. Traditionally, TMDCs wrinkles achieved by transferring exfoliated materials on prestretched polymer suffer from poor control and limited sample area, which significantly hinders desirable applications. Herein, we fabricate large-area monolayer TMDCs wrinkle arrays directly on the m-quartz substrate using strained epitaxy. The uniaxial thermal expansion coefficient mismatch between the substrate and TMDCs materials enables the generation of large uniaxial thermal strain. By quenching the TMDCs after growth, this uniaxial thermal strain can be quickly released as a form of wrinkle arrays along the [0001]quartz direction. Using WS2 as a model system, the size of as-grown wrinkles can be finely modulated within sub-100 nm by changing the quenching temperature. These WS2 wrinkles can be locally folded and form various multilayer structures with odd layer numbers during the transfer process. Besides, the corrugated structures in WS2 wrinkles induce significant changes to optical properties including anisotropic Raman response, enhanced photoluminescence, and second harmonic generation emissions. Furthermore, these wrinkle arrays exhibit enhanced chemical reactivity that can be selectively engineered to ribbon arrays with improved electrocatalytic performance. The developed strategy of strained epitaxy here should enable flexibility in the design of more sophisticated 2D-based structures, offering a simple but effective way toward the modulation of properties with enhanced performances.
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Affiliation(s)
- Jingwei Wang
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
- Department of Physics, The Hong Kong University of Science and Technology (HKUST), Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
| | - Mengjiao Han
- Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Qun Wang
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Yaqiang Ji
- Department of Mechanical and Energy Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Xian Zhang
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Run Shi
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
- Department of Physics, The Hong Kong University of Science and Technology (HKUST), Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
| | - Zefei Wu
- Department of Physics, The Hong Kong University of Science and Technology (HKUST), Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
| | - Liang Zhang
- Department of Mechanical and Energy Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Abbas Amini
- Center for Infrastructure Engineering, Western Sydney University, Kingswood, NSW 2751, Australia
| | - Liang Guo
- Department of Mechanical and Energy Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Ning Wang
- Department of Physics, The Hong Kong University of Science and Technology (HKUST), Clear Water Bay, Kowloon, Hong Kong 999077, P. R. China
| | - Junhao Lin
- Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
| | - Chun Cheng
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen 518055, P. R. China
- Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Shenzhen 518055, China
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23
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Jiang Y, Baben MT, Lin Y, Littler C, Syllaios AJ, Neogi A, Philipose U. Analyzing growth kinematics and fractal dimensions of molybdenum disulfide films. NANOTECHNOLOGY 2021; 32:245602. [PMID: 33706300 DOI: 10.1088/1361-6528/abedf0] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/26/2021] [Accepted: 03/11/2021] [Indexed: 06/12/2023]
Abstract
Though the positive role of alkali halides in realizing large area growth of transition metal dichalcogenide layers has been validated, the film-growth kinematics has not yet been fully established. This work presents a systematic analysis of the MoS2morphology for films grown under various pre-treatment conditions of the substrate with sodium chloride (NaCl). At an optimum NaCl concentration, the domain size of the monolayer increased by almost two orders of magnitude compared to alkali-free growth of MoS2. The results show an inverse relationship between fractal dimension and areal coverage of the substrate with monolayers and multi-layers, respectively. Using the Fact-Sage software, the role of NaCl in determining the partial pressures of Mo- and S-based compounds in gaseous phase at the growth temperature is elucidated. The presence of alkali salts is shown to affect the domain size and film morphology by affecting the Mo and S partial pressures. Compared to alkali-free synthesis under the same growth conditions, MoS2film growth assisted by NaCl results in ≈81% of the substrate covered by monolayers. Under ideal growth conditions, at an optimum NaCl concentration, nucleation was suppressed, and domains enlarged, resulting in large area growth of MoS2monolayers. No evidence of alkali or halogen atoms were found in the composition analysis of the films. On the basis of Raman spectroscopy and photoluminescence measurements, the MoS2films were found to be of good crystalline quality.
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Affiliation(s)
- Yan Jiang
- Department of Physics, University of North Texas, Denton, TX 76203, United States of America
| | | | - Yuankun Lin
- Department of Physics, University of North Texas, Denton, TX 76203, United States of America
| | - Chris Littler
- Department of Physics, University of North Texas, Denton, TX 76203, United States of America
| | - A J Syllaios
- Department of Physics, University of North Texas, Denton, TX 76203, United States of America
| | - Arup Neogi
- Department of Physics, University of North Texas, Denton, TX 76203, United States of America
| | - Usha Philipose
- Department of Physics, University of North Texas, Denton, TX 76203, United States of America
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24
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Huang L, Thi QH, Zheng F, Chen X, Chu YW, Lee CS, Zhao J, Ly TH. Catalyzed Kinetic Growth in Two-Dimensional MoS2. J Am Chem Soc 2020; 142:13130-13135. [DOI: 10.1021/jacs.0c05057] [Citation(s) in RCA: 23] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- Lingli Huang
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong, China
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen, China
| | - Quoc Huy Thi
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong, China
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen, China
| | - Fangyuan Zheng
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
- Shenzhen Research Institute, The Hong Kong Polytechnic University, Shenzhen, China
| | - Xin Chen
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong, China
| | - Yee Wa Chu
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong, China
| | - Chun-Sing Lee
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong, China
| | - Jiong Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
- Shenzhen Research Institute, The Hong Kong Polytechnic University, Shenzhen, China
| | - Thuc Hue Ly
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong, China
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen, China
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25
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Shi R, He P, Cai X, Zhang Z, Wang W, Wang J, Feng X, Wu Z, Amini A, Wang N, Cheng C. Oxide Inhibitor-Assisted Growth of Single-Layer Molybdenum Dichalcogenides (MoX 2, X = S, Se, Te) with Controllable Molybdenum Release. ACS NANO 2020; 14:7593-7601. [PMID: 32491834 DOI: 10.1021/acsnano.0c03469] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Though chemical vapor deposition (CVD) methods have been widely used in the growth of two-dimensional transition-metal dichalcogenides (2D TMDCs), the controllable fabrication of 2D TMDCs is yet hard to achieve because of the great challenge of concisely controlling the release of precursors vapor, one of the most critical growth kinetic factors. To solve this important issue, here we report the utilization of oxide inhibitors covering Mo source during CVD reactions to manipulate the release of Mo vapor. In contrast to the lack of capability of conventional CVD methods, 2D molybdenum dichalcogenide (MoX2, X = S, Se, Te) monolayers were successfully fabricated through the proposed CVD protocol with the oxide-inhibitor-assisted growth (OIAG) strategy. In this way, despite the fact that only separated MoTe2 flakes were prepared, both MoS2 (continuous and clean) and MoSe2 (continuous but dotted) monolayer films at the scale of centimeter were obtained. The presented OIAG method enables a comprehensive understanding and precise control of the reaction kinetics for improved growth of 2D MoX2.
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Affiliation(s)
- Run Shi
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, P.R. China
- Department of Physics and Center for Quantum Materials, Hong Kong University of Science and Technology, Hong Kong, P.R. China
| | - Pingge He
- Department of Physics and Center for Quantum Materials, Hong Kong University of Science and Technology, Hong Kong, P.R. China
| | - Xiangbin Cai
- Department of Physics and Center for Quantum Materials, Hong Kong University of Science and Technology, Hong Kong, P.R. China
| | - Zhuoqiong Zhang
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, P.R. China
| | - Weijun Wang
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, P.R. China
| | - Jingwei Wang
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, P.R. China
- Department of Physics and Center for Quantum Materials, Hong Kong University of Science and Technology, Hong Kong, P.R. China
| | - Xuemeng Feng
- Department of Physics and Center for Quantum Materials, Hong Kong University of Science and Technology, Hong Kong, P.R. China
| | - Zefei Wu
- Department of Physics and Center for Quantum Materials, Hong Kong University of Science and Technology, Hong Kong, P.R. China
| | - Abbas Amini
- Center for Infrastructure Engineering, Western Sydney University, Kingswood, New South Wales 2751, Australia
| | - Ning Wang
- Department of Physics and Center for Quantum Materials, Hong Kong University of Science and Technology, Hong Kong, P.R. China
| | - Chun Cheng
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, P.R. China
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26
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Rotunno E, Bosi M, Seravalli L, Salviati G, Fabbri F. Influence of organic promoter gradient on the MoS 2 growth dynamics. NANOSCALE ADVANCES 2020; 2:2352-2362. [PMID: 36133371 PMCID: PMC9418129 DOI: 10.1039/d0na00147c] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/21/2020] [Accepted: 04/11/2020] [Indexed: 06/10/2023]
Abstract
Chemical vapor deposition has been demonstrated to be the most efficient, versatile and reliable technique for the synthesis of monolayers of transition metal dichalcogenides. The use of organic promoters during the growth process was a turning point in order to increase the monolayer lateral size or to obtain complete coverage of the growth substrate. In this work we clarify the influence of the promoter gradient on the growth dynamics of MoS2. In particular, we place a sacrificial substrate covered with a promoter (a low sublimation-temperature perylene-based compound) downstream with respect to the growth substrate in order to maximize its gradient on the growth substrate through upstream diffusion. We demonstrate that the morphology and the number of layers of MoS2 are drastically affected by the distance of the growth substrate from the promoter sacrificial substrate. The farthermost area from the promoter substrate presents micrometric MoS2 triangular monolayers and large low hierarchy dendritic multi-layer structures. On the contrary the closest area reveals an almost continuous polycrystalline MoS2 monolayer, with bilayer terraces, with a lateral dimension up to hundreds of micrometers.
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Affiliation(s)
- E Rotunno
- Istituto Nanoscienze-CNR via G Campi 213/a 41125 Modena Italy
| | - M Bosi
- IMEM-CNR Area delle Scienze 37A 43124 Parma Italy
| | - L Seravalli
- IMEM-CNR Area delle Scienze 37A 43124 Parma Italy
| | - G Salviati
- IMEM-CNR Area delle Scienze 37A 43124 Parma Italy
| | - F Fabbri
- NEST, Istituto Nanoscienze - CNR, Scuola Normale Superiore Piazza San Silvestro 12 56127 Pisa Italy
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27
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Yoon A, Kim JH, Yoon J, Lee Y, Lee Z. van der Waals Epitaxial Formation of Atomic Layered α-MoO 3 on MoS 2 by Oxidation. ACS APPLIED MATERIALS & INTERFACES 2020; 12:22029-22036. [PMID: 32298075 DOI: 10.1021/acsami.0c03032] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The electronic, catalytic, and optical properties of transition metal dichalcogenides (TMDs) are significantly affected by oxidation, and using oxidation to tune the properties of TMDs has been actively explored. In particular, because transition metal oxides (TMOs) are promising hole injection layers, a TMD-TMO heterostructure can be potentially applied as a p-type semiconductor. However, the oxidation of TMDs has not been clearly elucidated because of the structural instability and the extremely small quantity of oxides formed. Here, we reveal the phases and morphologies of oxides formed on two-dimensional molybdenum disulfide (MoS2) using transmission electron microscopy analysis. We find that MoS2 starts to oxidize around 400 °C to form orthorhombic-phase molybdenum trioxide (α-MoO3) nanosheets. The α-MoO3 nanosheets so formed are stacked layer-by-layer on the underlying MoS2 via van der Waals interaction and the nanosheets are aligned epitaxially with six possible orientations. Furthermore, the band gap of MoS2 is increased from 1.27 to 3.0 eV through oxidation. Our study can be extended to most TMDs to form TMO-TMD heterostructures, which are potentially interesting as p-type transistors, gas sensors, or photocatalysts.
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Affiliation(s)
- Aram Yoon
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Jung Hwa Kim
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Jongchan Yoon
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Yeongdong Lee
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Zonghoon Lee
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
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28
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Hudeček O, Benoni R, Reyes-Gutierrez PE, Culka M, Šanderová H, Hubálek M, Rulíšek L, Cvačka J, Krásný L, Cahová H. Dinucleoside polyphosphates act as 5'-RNA caps in bacteria. Nat Commun 2020; 11:1052. [PMID: 32103016 PMCID: PMC7044304 DOI: 10.1038/s41467-020-14896-8] [Citation(s) in RCA: 34] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/02/2019] [Accepted: 02/07/2020] [Indexed: 12/12/2022] Open
Abstract
It has been more than 50 years since the discovery of dinucleoside polyphosphates (NpnNs) and yet their roles and mechanisms of action remain unclear. Here, we show that both methylated and non-methylated NpnNs serve as RNA caps in Escherichia coli. NpnNs are excellent substrates for T7 and E. coli RNA polymerases (RNAPs) and efficiently initiate transcription. We demonstrate, that the E. coli enzymes RNA 5′-pyrophosphohydrolase (RppH) and bis(5′-nucleosyl)-tetraphosphatase (ApaH) are able to remove the NpnN-caps from RNA. ApaH is able to cleave all NpnN-caps, while RppH is unable to cleave the methylated forms suggesting that the methylation adds an additional layer to RNA stability regulation. Our work introduces a different perspective on the chemical structure of RNA in prokaryotes and on the role of RNA caps. We bring evidence that small molecules, such as NpnNs are incorporated into RNA and may thus influence the cellular metabolism and RNA turnover. Nicotinamide adenine dinucleotide and coenzyme A serve as a 5′-cap of prokaryotic RNA. Here the authors report that methylated and non-methylated dinucleoside polyphosphates (NpnNs) exist as Escherichia coli RNA caps which can be cleaved by 5′-pyrophosphohydrolase (RppH) and bis(5′-nucleosyl)-tetraphosphatase (ApaH).
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Affiliation(s)
- Oldřich Hudeček
- Institute of Organic Chemistry and Biochemistry of the Czech Academy of Sciences, Flemingovo nam. 2, 16610, Prague 6, Czech Republic
| | - Roberto Benoni
- Institute of Organic Chemistry and Biochemistry of the Czech Academy of Sciences, Flemingovo nam. 2, 16610, Prague 6, Czech Republic
| | - Paul E Reyes-Gutierrez
- Institute of Organic Chemistry and Biochemistry of the Czech Academy of Sciences, Flemingovo nam. 2, 16610, Prague 6, Czech Republic
| | - Martin Culka
- Institute of Organic Chemistry and Biochemistry of the Czech Academy of Sciences, Flemingovo nam. 2, 16610, Prague 6, Czech Republic
| | - Hana Šanderová
- Institute of Microbiology of the Czech Academy of Sciences, Vídeňská 1083, 142 20, Prague, Czech Republic
| | - Martin Hubálek
- Institute of Organic Chemistry and Biochemistry of the Czech Academy of Sciences, Flemingovo nam. 2, 16610, Prague 6, Czech Republic
| | - Lubomír Rulíšek
- Institute of Organic Chemistry and Biochemistry of the Czech Academy of Sciences, Flemingovo nam. 2, 16610, Prague 6, Czech Republic
| | - Josef Cvačka
- Institute of Organic Chemistry and Biochemistry of the Czech Academy of Sciences, Flemingovo nam. 2, 16610, Prague 6, Czech Republic
| | - Libor Krásný
- Institute of Microbiology of the Czech Academy of Sciences, Vídeňská 1083, 142 20, Prague, Czech Republic
| | - Hana Cahová
- Institute of Organic Chemistry and Biochemistry of the Czech Academy of Sciences, Flemingovo nam. 2, 16610, Prague 6, Czech Republic.
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29
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Wan W, Zhan L, Shih TM, Zhu Z, Lu J, Huang J, Zhang Y, Huang H, Zhang X, Cai W. Controlled growth of MoS 2 via surface-energy alterations. NANOTECHNOLOGY 2020; 31:035601. [PMID: 31574488 DOI: 10.1088/1361-6528/ab49a2] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Monolayer MoS2 in triangular configurations with rich edges or high-quality uniform films are either catalytically active for the hydrogen evolution reaction or flexible for functional electronic and optoelectronic devices. Here, we have experimentally discovered that these two types of MoS2 products can be selectively synthesized on graphene or sapphire substrates, which are associated with both different adsorption energy and diffusion-energy barrier for vapor precursors during growth. Our study not only provides insights into the on-surface synthesis of high-quality MoS2 monolayers, but also can be applied to the growth of vertically-stacked and large-scale in-plane lateral MoS2-graphene heterostructures.
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Affiliation(s)
- Wen Wan
- Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen, Fujian 361005, People's Republic of China
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30
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Chen F, Su W, Zhao S, Lv Y, Ding S, Fu L. Morphological evolution of atomically thin MoS 2 flakes synthesized by a chemical vapor deposition strategy. CrystEngComm 2020. [DOI: 10.1039/d0ce00558d] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/18/2023]
Abstract
The evolution of 2D MoS2 flakes from dendritic shape to hexagonal can be realized by the reaction of S and MoO3 powders at different growth temperatures via the chemical vapor deposition method.
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Affiliation(s)
- Fei Chen
- College of Materials and Environmental Engineering
- Hangzhou Dianzi University
- Hangzhou
- China
| | - Weitao Su
- School of Sciences
- Hangzhou Dianzi University
- Hangzhou
- China
| | - Shichao Zhao
- College of Materials and Environmental Engineering
- Hangzhou Dianzi University
- Hangzhou
- China
| | - Yanfei Lv
- College of Materials and Environmental Engineering
- Hangzhou Dianzi University
- Hangzhou
- China
| | - Su Ding
- College of Materials and Environmental Engineering
- Hangzhou Dianzi University
- Hangzhou
- China
| | - Li Fu
- College of Materials and Environmental Engineering
- Hangzhou Dianzi University
- Hangzhou
- China
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31
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Zhou YH, Zhang ZB, Xu P, Zhang H, Wang B. UV-Visible Photodetector Based on I-type Heterostructure of ZnO-QDs/Monolayer MoS 2. NANOSCALE RESEARCH LETTERS 2019; 14:364. [PMID: 31802284 PMCID: PMC6893006 DOI: 10.1186/s11671-019-3183-8] [Citation(s) in RCA: 19] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/20/2019] [Accepted: 10/14/2019] [Indexed: 05/31/2023]
Abstract
Monolayer MoS2 has shown excellent photoresponse properties, but its promising applications in high-sensitivity photodetection suffer from the atomic-thickness-limited adsorption and band gap-limited spectral selectivity. Here we have carried out investigations on MoS2 monolayer-based photodetectors with and without decoration of ZnO quantum dots (ZnO-QDs) for comparison. Compared with monolayer MoS2 photodetectors, the monolayer ZnO-QDs/MoS2 hybrid device exhibits faster response speed (1.5 s and 1.1 s, respectively), extended broadband photoresponse range (deep UV-visible), and enhanced photoresponse in visible spectrum, such as higher responsivity over 0.084 A/W and larger detectivity of 1.05 × 1011 Jones, which results from considerable injection of carries from ZnO-QDs to MoS2 due to the formation of I-type heterostructure existing in the contact interface of them.
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Affiliation(s)
- Yong Heng Zhou
- College of Physical and Optoelectronic Engineering; College of Electronics and Information Engineering; Institute of Micro-nano Optoelectronic Technology; SZU-NUS Collaborative Innovation Centre for Optoelectronic Science & Technology; Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen, 518060 Guangdong People’s Republic of China
| | - Zhi Bin Zhang
- College of Physical and Optoelectronic Engineering; College of Electronics and Information Engineering; Institute of Micro-nano Optoelectronic Technology; SZU-NUS Collaborative Innovation Centre for Optoelectronic Science & Technology; Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen, 518060 Guangdong People’s Republic of China
| | - Ping Xu
- College of Physical and Optoelectronic Engineering; College of Electronics and Information Engineering; Institute of Micro-nano Optoelectronic Technology; SZU-NUS Collaborative Innovation Centre for Optoelectronic Science & Technology; Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen, 518060 Guangdong People’s Republic of China
| | - Han Zhang
- College of Physical and Optoelectronic Engineering; College of Electronics and Information Engineering; Institute of Micro-nano Optoelectronic Technology; SZU-NUS Collaborative Innovation Centre for Optoelectronic Science & Technology; Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen, 518060 Guangdong People’s Republic of China
| | - Bing Wang
- College of Physical and Optoelectronic Engineering; College of Electronics and Information Engineering; Institute of Micro-nano Optoelectronic Technology; SZU-NUS Collaborative Innovation Centre for Optoelectronic Science & Technology; Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen, 518060 Guangdong People’s Republic of China
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32
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Li X, Zhang S, Chen S, Zhang X, Gao J, Zhang YW, Zhao J, Shen X, Yu R, Yang Y, He L, Nie J, Xiong C, Dou R. Mo Concentration Controls the Morphological Transitions from Dendritic to Semicompact, and to Compact Growth of Monolayer Crystalline MoS 2 on Various Substrates. ACS APPLIED MATERIALS & INTERFACES 2019; 11:42751-42759. [PMID: 31626529 DOI: 10.1021/acsami.9b14577] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The domain morphology in the growth of transition-metal dichalcogenides (TMDCs) is mostly triangular but rarely dendritic. Here, we report a robust chemical vapor deposition method to fabricate atomic-thin 2H-phase MoS2 dendrites on several single-crystalline substrates with different lattice structures, such as rutile-TiO2(001), SrTiO3(001), and sapphire(0001). It is found that by tuning the concentration of Mo adatoms, the morphology of MoS2 domains on these substrates evolves from tridentate dendrites at a low Mo concentration to semicompact fractal domains at an intermediate Mo concentration, and to a compact triangular shape at a high Mo concentration. First-principles calculations reveal that the edge diffusion barrier of Mo is comparable to the attachment barrier, inhibiting fast Mo atom diffusion along the edge. Kinetics Monte Carlo simulations with varying Mo concentrations well reproduce the experimental results. Our combined experimental and theoretical analyses evidently show that the growth of MoS2 dendritic domains at a low Mo concentration is a nonequilibrium process, which is dominated by the kinetics of Mo adatoms. Our study presents an effective route to control the morphology of TMDCs by simply tuning the transition-metal adatom concentration.
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Affiliation(s)
- Xiaying Li
- Department of Physics , Beijing Normal University , Beijing 100875 , People's Republic of China
| | - Shiping Zhang
- Department of Physics , Beijing Normal University , Beijing 100875 , People's Republic of China
| | - Shuai Chen
- Institute of High Performance Computing, A*STAR , 138632 Singapore
| | - Xingli Zhang
- Department of Physics , Beijing Normal University , Beijing 100875 , People's Republic of China
| | - Junfeng Gao
- Laboratory of Materials Modification by Laser, Ion and Electron Beams , Dalian University of Technology, Ministry of Education , Dalian 116024 , China
| | - Yong-Wei Zhang
- Institute of High Performance Computing, A*STAR , 138632 Singapore
| | - Jijun Zhao
- Laboratory of Materials Modification by Laser, Ion and Electron Beams , Dalian University of Technology, Ministry of Education , Dalian 116024 , China
| | - Xi Shen
- Beijing National Laboratory for Condensed Mater Physics , Institute of Physics, Chinese Academy of Sciences , Beijing 100190 , People's Republic of China
| | - Richeng Yu
- Beijing National Laboratory for Condensed Mater Physics , Institute of Physics, Chinese Academy of Sciences , Beijing 100190 , People's Republic of China
| | - Yu Yang
- Institute of Applied Physics & Computational Mathematics, LCP , Beijing 100088 , People's Republic of China
| | - Lin He
- Department of Physics , Beijing Normal University , Beijing 100875 , People's Republic of China
| | - Jiacai Nie
- Department of Physics , Beijing Normal University , Beijing 100875 , People's Republic of China
| | - Changmin Xiong
- Department of Physics , Beijing Normal University , Beijing 100875 , People's Republic of China
| | - Ruifen Dou
- Department of Physics , Beijing Normal University , Beijing 100875 , People's Republic of China
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Mandyam SV, Zhao MQ, Das PM, Zhang Q, Price CC, Gao Z, Shenoy VB, Drndić M, Johnson ATC. Controlled Growth of Large-Area Bilayer Tungsten Diselenides with Lateral P-N Junctions. ACS NANO 2019; 13:10490-10498. [PMID: 31424199 PMCID: PMC7080308 DOI: 10.1021/acsnano.9b04453] [Citation(s) in RCA: 17] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
Bilayer two-dimensional (2D) van der Waals (vdW) materials are attracting increasing attention due to their predicted high quality electronic and optical properties. Here, we demonstrate dense, selective growth of WSe2 bilayer flakes by chemical vapor deposition with the use of a 1:10 molar mixture of sodium cholate and sodium chloride as the growth promoter to control the local diffusion of W-containing species. A large fraction of the bilayer WSe2 flakes showed a 0 (AB) and 60° (AA') twist between the two layers, whereas Moiré 15 and 30° twist angles were also observed. Well-defined monolayer-bilayer junctions were formed in the as-grown bilayer WSe2 flakes, and these interfaces exhibited p-n diode rectification and an ambipolar transport characteristic. This work provides an efficient method for the layer-controlled growth of 2D materials, in particular, 2D transition metal dichalcogenides, and promotes their applications in next-generation electronic and optoelectronic devices.
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Affiliation(s)
- Srinivas V. Mandyam
- Department of Physics and Astronomy, University of Pennsylvania, 209 South 33 Street, Philadelphia, PA 19104, USA
| | - Meng-Qiang Zhao
- Department of Physics and Astronomy, University of Pennsylvania, 209 South 33 Street, Philadelphia, PA 19104, USA
| | - Paul Masih Das
- Department of Physics and Astronomy, University of Pennsylvania, 209 South 33 Street, Philadelphia, PA 19104, USA
| | - Qicheng Zhang
- Department of Physics and Astronomy, University of Pennsylvania, 209 South 33 Street, Philadelphia, PA 19104, USA
| | - Christopher C. Price
- Department of Materials Science and Engineering, University of Pennsylvania, 3231 Walnut St., Philadelphia, PA 19104, USA
| | - Zhaoli Gao
- Department of Physics and Astronomy, University of Pennsylvania, 209 South 33 Street, Philadelphia, PA 19104, USA
| | - Vivek B. Shenoy
- Department of Materials Science and Engineering, University of Pennsylvania, 3231 Walnut St., Philadelphia, PA 19104, USA
| | - Marija Drndić
- Department of Physics and Astronomy, University of Pennsylvania, 209 South 33 Street, Philadelphia, PA 19104, USA
| | - Alan T. Charlie Johnson
- Department of Physics and Astronomy, University of Pennsylvania, 209 South 33 Street, Philadelphia, PA 19104, USA
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Shao G, Xue XX, Zhou X, Xu J, Jin Y, Qi S, Liu N, Duan H, Wang S, Li S, Ouzounian M, Hu TS, Luo J, Liu S, Feng Y. Shape-Engineered Synthesis of Atomically Thin 1T-SnS 2 Catalyzed by Potassium Halides. ACS NANO 2019; 13:8265-8274. [PMID: 31283181 DOI: 10.1021/acsnano.9b03648] [Citation(s) in RCA: 16] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Shape engineering plays a crucial role in the application of two-dimensional (2D) layered metal dichalcogenide (LMD) crystalline materials in terms of physical and chemical property modulation. However, controllable growth of 1T phase tin disulfide (SnS2) with multifarious morphologies has rarely been reported and remains challenging. Herein, we report a direct synthesis of large-size, uniform, and atomically thin 1T-SnS2 with multiple morphologies by adding potassium halides via a facile chemical vapor deposition process. A variety of morphologies, i.e., from hexagon, triangle, windmill, and dendritic to coralloid, corresponding to fractal dimensions from 1.01 to 1.81 are accurately controlled by growth conditions. Moreover, the Sn concentration controls the morphology change of SnS2. The edge length of the SnS2 dendritic flake can grow larger than 500 μm in 5 min. Potassium halides can significantly reduce the surface migration barrier of the SnS2 cluster and enhance the SnS2 adhesion force with substrate to facilitate efficient high in-plane growth of monolayer SnS2 compared to sodium halides by density functional theory calculations. More branched SnS2 with higher fractal dimension provides more active sites for enhancing hydrogen evolution reactions. Importantly, we prove that potassium halides are preferable for 1T-phase LMDs structures, while sodium halides are more suitable for 2H-phase materials. The growth mechanism proposed here provides a general approach for controllable-phase synthesis of 2D LMD crystals and related heterostructures. Shape engineering of 2D materials also provides a strategy to tune LMD properties for demanding applications.
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Affiliation(s)
- Gonglei Shao
- Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering , Hunan University , Changsha 410082 , P.R. China
| | - Xiong-Xiong Xue
- Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics , Hunan University , Changsha 410082 , P.R. China
| | - Xionglin Zhou
- Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering , Hunan University , Changsha 410082 , P.R. China
| | - Jie Xu
- Center for Electron Microscopy, Institute for New Energy Materials & Low-Carbon Technologies, School of Materials Science and Engineering , Tianjin University of Technology , Tianjin 300384 , P.R. China
| | - Yuanyuan Jin
- Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering , Hunan University , Changsha 410082 , P.R. China
| | - Shuyan Qi
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry , Beijing Normal University , Beijing 100875 , P.R. China
| | - Nan Liu
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry , Beijing Normal University , Beijing 100875 , P.R. China
| | - Huigao Duan
- State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, College of Mechanical and Vehicle Engineering , Hunan University , Changsha 410082 , P.R. China
| | - Shanshan Wang
- Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, College of Aerospace Science and Engineering , National University of Defense Technology , Changsha 410073 , P.R. China
| | - Shisheng Li
- International Center for Young Scientists (ICYS) and International Center for Materials Nanoarchitectonics (MANA) , National Institute for Materials Science (NIMS) , Tsukuba 305-0044 , Japan
| | - Miray Ouzounian
- Department of Mechanical Engineering , California State University , Los Angeles , California 90032 , United States
| | - Travis Shihao Hu
- Department of Mechanical Engineering , California State University , Los Angeles , California 90032 , United States
| | - Jun Luo
- Center for Electron Microscopy, Institute for New Energy Materials & Low-Carbon Technologies, School of Materials Science and Engineering , Tianjin University of Technology , Tianjin 300384 , P.R. China
| | - Song Liu
- Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering , Hunan University , Changsha 410082 , P.R. China
| | - Yexin Feng
- Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics , Hunan University , Changsha 410082 , P.R. China
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Xiao Y, Zhou M, Zeng M, Fu L. Atomic-Scale Structural Modification of 2D Materials. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2019; 6:1801501. [PMID: 30886793 PMCID: PMC6402411 DOI: 10.1002/advs.201801501] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/03/2018] [Revised: 10/20/2018] [Indexed: 05/02/2023]
Abstract
2D materials have attracted much attention since the discovery of graphene in 2004. Due to their unique electrical, optical, and magnetic properties, they have potential for various applications such as electronics and optoelectronics. Owing to thermal motion and lattice growth kinetics, different atomic-scale structures (ASSs) can originate from natural or intentional regulation of 2D material atomic configurations. The transformations of ASSs can result in the variation of the charge density, electronic density of state and lattice symmetry so that the property tuning of 2D materials can be achieved and the functional devices can be constructed. Here, several kinds of ASSs of 2D materials are introduced, including grain boundaries, atomic defects, edge structures, and stacking arrangements. The design strategies of these structures are also summarized, especially for atomic defects and edge structures. Moreover, toward multifunctional integration of applications, the modulation of electrical, optical, and magnetic properties based on atomic-scale structural modification are presented. Finally, challenges and outlooks are featured in the aspects of controllable structure design and accurate property tuning for 2D materials with ASSs. This work may promote research on the atomic-scale structural modification of 2D materials toward functional applications.
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Affiliation(s)
- Yao Xiao
- The Institute for Advanced Studies (IAS)Wuhan UniversityWuhan430072P. R. China
| | - Mengyue Zhou
- College of Chemistry and Molecular SciencesWuhan UniversityWuhan430072P. R. China
| | - Mengqi Zeng
- College of Chemistry and Molecular SciencesWuhan UniversityWuhan430072P. R. China
| | - Lei Fu
- The Institute for Advanced Studies (IAS)Wuhan UniversityWuhan430072P. R. China
- College of Chemistry and Molecular SciencesWuhan UniversityWuhan430072P. R. China
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36
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Dong J, Zhang L, Ding F. Kinetics of Graphene and 2D Materials Growth. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1801583. [PMID: 30318816 DOI: 10.1002/adma.201801583] [Citation(s) in RCA: 45] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/11/2018] [Revised: 07/06/2018] [Indexed: 06/08/2023]
Abstract
During the last 10 years, remarkable achievements on the chemical vapor deposition (CVD) growth of 2D materials have been made, but the understanding of the underlying mechanisms is still relatively limited. Here, the current progress on the understanding of the growth kinetics of 2D materials, especially for their CVD synthesis, is reviewed. In order to present a complete picture of 2D materials' growth kinetics, the following factors are discussed: i) two types of growth modes, namely attachment-limited growth and diffusion-limited growth; ii) the etching of 2D materials, which offers an additional degree of freedom for growth control; iii) a number of experimental factors in graphene CVD synthesis, such as structure of the substrate, pressure of hydrogen or oxygen, temperature, etc., which are found to have profound effects on the growth kinetics; iv) double-layer and few-layer 2D materials' growth, which has distinct features different from the growth of single-layer 2D materials; and v) the growth of polycrystalline 2D materials by the coalescence of a few single crystalline domains. Finally, the current challenges and opportunities in future 2D materials' synthesis are summarized.
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Affiliation(s)
- Jichen Dong
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - Leining Zhang
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Feng Ding
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
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37
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Feng Y, Yu K, Zhu Z. Cracked eight-awn star TaS2 with fractal structures used as an efficient electrocatalyst for the hydrogen evolution reaction. CrystEngComm 2019. [DOI: 10.1039/c9ce00492k] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
A new eight-awn star TaS2 with a specially designed fractal and cracked dendrite structure was prepared, which showed outstanding HER catalytic activities owing to its specially designed structure.
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Affiliation(s)
- Yu Feng
- Key Laboratory of Polar Materials and Devices (Ministry of Education of China)
- Department of Optoelectronics
- East China Normal University
- Shanghai 200241
- China
| | - Ke Yu
- Key Laboratory of Polar Materials and Devices (Ministry of Education of China)
- Department of Optoelectronics
- East China Normal University
- Shanghai 200241
- China
| | - Ziqiang Zhu
- Key Laboratory of Polar Materials and Devices (Ministry of Education of China)
- Department of Optoelectronics
- East China Normal University
- Shanghai 200241
- China
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38
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Zhou Y, Wang J, Zhou H, Xiang F, Yang H, Cai X, Liao H, Gu L, Wang Y. An electrochemical approach towards the controllable synthesis of highly ordered and hierarchical zinc oxide dendritic crystals composed of hexagonal nanosheets: some insights into the stacking-assembly of the hierarchical architecture. CrystEngComm 2019. [DOI: 10.1039/c9ce00342h] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/28/2022]
Abstract
Herein, an electrochemical synthetic approach is presented to produce a highly ordered and hierarchical zinc oxide dendrite architecture composed of hexagonal nanosheets.
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Affiliation(s)
- Yuli Zhou
- School of Materials Science and Engineering
- Xihua University
- Chengdu 610039
- People's Republic of China
| | - Jian Wang
- School of Materials Science and Engineering
- Xihua University
- Chengdu 610039
- People's Republic of China
| | - Hongting Zhou
- School of Mechanical Engineering
- Xihua University
- Chengdu 610039
- People's Republic of China
| | - Fangyu Xiang
- College of teacher education
- Ningbo University
- Ningbo 315000
- People's Republic of China
| | - Hongyu Yang
- School of Materials Science and Engineering
- Xihua University
- Chengdu 610039
- People's Republic of China
| | - Xiaoyao Cai
- School of Mechanical Engineering
- Xihua University
- Chengdu 610039
- People's Republic of China
| | - Huimin Liao
- School of Materials Science and Engineering
- Xihua University
- Chengdu 610039
- People's Republic of China
| | - Lin Gu
- School of Materials Science and Engineering
- Xihua University
- Chengdu 610039
- People's Republic of China
| | - Yanyan Wang
- School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology
- Soochow University
- Suzhou 215006
- People's Republic of China
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Norton K, Kunstmann J, Ping L, Rakowski A, Wang C, Marsden AJ, Murtaza G, Zeng N, McAdams SG, McAdams SJ, Bissett MA, Haigh SJ, Derby B, Seifert G, Ke JCR, Lewis DJ. Synthetic 2-D lead tin sulfide nanosheets with tuneable optoelectronic properties from a potentially scalable reaction pathway. Chem Sci 2018; 10:1035-1045. [PMID: 30774899 PMCID: PMC6346407 DOI: 10.1039/c8sc04018d] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/10/2018] [Accepted: 10/31/2018] [Indexed: 11/21/2022] Open
Abstract
Solventless thermolysis of molecular precursors followed by liquid phase exfoliation allows access to two-dimensional IV-VI semiconductor nanomaterials hitherto unreachable by a scalable processing pathway. Firstly, the use of metal dithiocarbamate precursors to produce bulk alloys in the series Pb1-x Sn x S (0 ≤ x ≤ 1) by thermolysis is demonstrated. The bulk powders are characterised by powder X-ray diffraction (pXRD), Raman spectroscopy, scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) spectroscopy. It was found that there is a transition from cubic structures for the Pb-rich alloys including the end compound, PbS (0 ≤ x ≤ 0.4) to layered orthorhombic structures for Sn-rich alloys and the end compound SnS (0.5 ≤ x ≤ 1.0). A smooth elemental progression from lead-rich to tin-rich monochalcogenides across the series of materials is observed. Liquid phase exfoliation was applied to produce two dimensional (2D) nanosheets for a mixed Pb1-x Sn x S alloy (where x = 0.8) in 1-methyl-2-pyrrolidone (NMP) using the synthetic bulk powder as starting material. The nanosheet products were characterized by SEM, atomic force microscopy (AFM) and high angle annular dark field scanning transmission electron microscopy (HAADF STEM). First principle calculations of Pb1-x Sn x S alloys show that the Sn content x modifies the size of the band gap by several 100 meV and that x changes the gap type from indirect in SnS to direct in Pb0.2Sn0.8S. These results are supported by UV-Vis spectroscopy of exfoliated Pb0.2Sn0.8S. The method employed demonstrates a new, scalable, processing pathway which can potentially be used to synthesize a range of synthetic layered structures that can be exfoliated to as-yet unaccessed 2D materials with tunable electronic properties.
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Affiliation(s)
- Kane Norton
- School of Materials University of Manchester , Oxford Road , Manchester , UK M13 9PL .
| | - Jens Kunstmann
- Theoretische Chemie , Technische Universität Dresden , 01069 Dresden , Germany .
| | - Lu Ping
- School of Materials University of Manchester , Oxford Road , Manchester , UK M13 9PL .
| | - Alexander Rakowski
- School of Chemistry , University of Manchester , Oxford Road , Manchester , UK M13 9PL
| | - Chuchen Wang
- School of Materials University of Manchester , Oxford Road , Manchester , UK M13 9PL .
| | - Alexander J Marsden
- School of Materials University of Manchester , Oxford Road , Manchester , UK M13 9PL . .,National Graphene Institute , University of Manchester , Oxford Road , Manchester , UK M13 9PL
| | - Ghulam Murtaza
- School of Chemistry , University of Manchester , Oxford Road , Manchester , UK M13 9PL
| | - Niting Zeng
- School of Materials University of Manchester , Oxford Road , Manchester , UK M13 9PL .
| | | | - Simon J McAdams
- School of Materials University of Manchester , Oxford Road , Manchester , UK M13 9PL . .,School of Chemistry , University of Manchester , Oxford Road , Manchester , UK M13 9PL
| | - Mark A Bissett
- School of Materials University of Manchester , Oxford Road , Manchester , UK M13 9PL . .,National Graphene Institute , University of Manchester , Oxford Road , Manchester , UK M13 9PL
| | - Sarah J Haigh
- School of Materials University of Manchester , Oxford Road , Manchester , UK M13 9PL . .,National Graphene Institute , University of Manchester , Oxford Road , Manchester , UK M13 9PL
| | - Brian Derby
- School of Materials University of Manchester , Oxford Road , Manchester , UK M13 9PL .
| | - Gotthard Seifert
- Theoretische Chemie , Technische Universität Dresden , 01069 Dresden , Germany .
| | | | - David J Lewis
- School of Materials University of Manchester , Oxford Road , Manchester , UK M13 9PL .
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40
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You J, Hossain MD, Luo Z. Synthesis of 2D transition metal dichalcogenides by chemical vapor deposition with controlled layer number and morphology. NANO CONVERGENCE 2018; 5:26. [PMID: 30467647 PMCID: PMC6160381 DOI: 10.1186/s40580-018-0158-x] [Citation(s) in RCA: 41] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2018] [Accepted: 09/10/2018] [Indexed: 05/08/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have stimulated the modern technology due to their unique and tunable electronic, optical, and chemical properties. Therefore, it is very important to study the control parameters for material preparation to achieve high quality thin films for modern electronics, as the performance of TMDs-based device largely depends on their layer number, grain size, orientation, and morphology. Among the synthesis methods, chemical vapor deposition (CVD) is an excellent technique, vastly used to grow controlled layer of 2D materials in recent years. In this review, we discuss the different growth routes and mechanisms to synthesize high quality large size TMDs using CVD method. We highlight the recent advances in the controlled growth of mono- and few-layer TMDs materials by varying different growth parameters. Finally, different strategies to control the grain size, boundaries, orientation, morphology and their application for various field of are also thoroughly discussed.
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Affiliation(s)
- Jiawen You
- Department of Chemical and Biological Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
| | - Md Delowar Hossain
- Department of Chemical and Biological Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
| | - Zhengtang Luo
- Department of Chemical and Biological Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
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41
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Agarwal V, Chatterjee K. Recent advances in the field of transition metal dichalcogenides for biomedical applications. NANOSCALE 2018; 10:16365-16397. [PMID: 30151537 DOI: 10.1039/c8nr04284e] [Citation(s) in RCA: 89] [Impact Index Per Article: 14.8] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
Nanosheets of transition metal dichalcogenide (TMDs), the graphene-like two-dimensional (2D) materials, exhibit a unique combination of properties and have attracted enormous research interest for a wide range of applications including catalysis, functional electronics, solid lubrication, photovoltaics, energy materials and most recently in biomedical applications. Their potential for use in biosensors, drug delivery, multimodal imaging, antimicrobial agents and tissue engineering is being actively studied. However, the commercial translation of exfoliated TMDs has been limited due to the low aqueous solubility, non-uniformity, lack of control over the layer thickness, and the long-term colloidal stability of the exfoliated material. There is wide interest in the synthesis and exfoliation of TMDs resulting in the reporting of increasing numbers of new methods and their biomedical applications. The unique physicochemical characteristics of the TMD nanosheets have been exploited to tether them with biological payload to achieve selective localized delivery in vivo. The large surface-to-volume ratio, good cytocompatibility, ease of surface modification, tunable bandgap, strong spin-orbit coupling, and high optical and thermal conversion efficiency of TMD nanosheets make them favorable over traditional nanomaterials for biomedical research. Moreover, the presence of abundant active edge sites on the 2D TMDs makes them suitable for catalytic activities, while the large surface area and the interspace between layers are particularly conducive to ion or small molecule intercalation, making them useful for energy storage applications with rapid redox reaction capabilities. One of the major limitations of the exfoliated TMDs has been their limited colloidal stability in aqueous media. In this review, we summarize the recent advances in the exfoliation and synthesis of single-layered TMDs, their biomedical efficacy in terms of cytotoxicity, combinatorial therapy and diagnostic imaging, as well as antimicrobial activity. We highlight the current challenges in the field and propose strategies for the future.
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Affiliation(s)
- Vipul Agarwal
- Department of Materials Engineering, Indian Institute of Science, Bangalore, Karnataka 560012, India.
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