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Gao Y, Cai Q, He Y, Zhang D, Cao Q, Zhu M, Ma Z, Zhao B, He H, Di D, Ye Z, Dai X. Highly efficient blue light-emitting diodes based on mixed-halide perovskites with reduced chlorine defects. SCIENCE ADVANCES 2024; 10:eado5645. [PMID: 39018409 PMCID: PMC466955 DOI: 10.1126/sciadv.ado5645] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/08/2024] [Accepted: 06/14/2024] [Indexed: 07/19/2024]
Abstract
Perovskite light-emitting diodes (PeLEDs) provide excellent opportunities for low-cost, color-saturated, and large-area displays. However, the performance of blue PeLEDs lags far behind that of their green and red counterparts. Here, we show that the external quantum efficiencies (EQEs) of blue PeLEDs scale linearly with the photoluminescence quantum yields (PL QYs) of CsPb(BrxCl1-x)3 nanocrystals emitting at 460 to 480 nm. The recombination efficiency of carriers is highly sensitive to the chlorine content and the related deep-level defects in nanocrystals, causing notable EQE drops even with minor increases in chlorine defects. Minor adjustments of chlorine content through rubidium compensation on the A-site effectively suppress the formation of nonradiative defects, improving PL QYs while retaining desirable bandgaps for blue-emitting nanocrystals. Our PeLEDs with record-high efficiencies span the blue spectrum, achieving peak EQEs of 12.0% (460 nm), 16.7% (465 nm), 21.3% (470 nm), 24.3% (475 nm), and 26.4% (480 nm). This work exemplifies chlorine-defect control as a key design principle for high-efficiency blue PeLEDs.
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Affiliation(s)
- Yun Gao
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Center of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
| | - Qiuting Cai
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering; International Research Center for Advanced Photonics, Zhejiang University, Hangzhou 310027, China
| | - Yifan He
- Wenzhou XINXINTAIJING Tech. Co. Ltd., Wenzhou 325006, China
| | - Dingshuo Zhang
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Center of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
| | - Qingli Cao
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Center of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
| | - Meiyi Zhu
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Center of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
| | - Zichao Ma
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Center of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
| | - Baodan Zhao
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering; International Research Center for Advanced Photonics, Zhejiang University, Hangzhou 310027, China
| | - Haiping He
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Center of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan 030002, China
| | - Dawei Di
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering; International Research Center for Advanced Photonics, Zhejiang University, Hangzhou 310027, China
| | - Zhizhen Ye
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Center of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan 030002, China
| | - Xingliang Dai
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Center of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan 030002, China
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2
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Lee S, Kim J, Kim H, Kim C, Kim S, Kim C, Lee H, Choi B, Muthu C, Kim T, Lee J, Lee S, Ihee H, Lee JY. Brightening deep-blue perovskite light-emitting diodes: A path to Rec. 2020. SCIENCE ADVANCES 2024; 10:eadn8465. [PMID: 38758786 PMCID: PMC11100563 DOI: 10.1126/sciadv.adn8465] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/03/2024] [Accepted: 04/15/2024] [Indexed: 05/19/2024]
Abstract
Deep-blue perovskite light-emitting diodes (PeLEDs) of high purity are highly sought after for next-generation displays complying with the Rec. 2020 standard. However, mixed-halide perovskite materials designed for deep-blue emitters are prone to halide vacancies, which readily occur because of the low formation energy of chloride vacancies. This degrades bandgap instability and performance. Here, we propose a chloride vacancy-targeting passivation strategy using sulfonate ligands with different chain lengths. The sulfonate groups have a strong affinity for lead(II) ions, effectively neutralizing vacancies. Our strategy successfully suppressed phase segregation, yielding color-stable deep-blue PeLEDs with an emission peak at 461 nanometers and a maximum luminance (Lmax) of 2707 candela per square meter with external quantum efficiency (EQE) of 3.05%, one of the highest for Rec. 2020 standard-compliant deep-blue PeLEDs. We also observed a notable increase in EQE up to 5.68% at Lmax of 1978 candela per square meter with an emission peak at 461 nanometers by changing the carbon chain length.
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Affiliation(s)
- Seungjae Lee
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Junho Kim
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Hyojun Kim
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Changwon Kim
- Department of Chemistry, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Siin Kim
- Department of Chemistry, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Changjo Kim
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Heeseung Lee
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Bongjun Choi
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Chinnadurai Muthu
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Taehyun Kim
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Jihyung Lee
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Seungbok Lee
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Hyotcherl Ihee
- Department of Chemistry, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
- Center for Advanced Reaction Dynamics (CARD), Institute for Basic Science (IBS), Daejeon 34141, Republic of Korea
| | - Jung-Yong Lee
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
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3
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Cheng M, Jiang J, Yan C, Lin Y, Mortazavi M, Kaul AB, Jiang Q. Progress and Application of Halide Perovskite Materials for Solar Cells and Light Emitting Devices. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:391. [PMID: 38470722 PMCID: PMC10933891 DOI: 10.3390/nano14050391] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/11/2024] [Revised: 02/14/2024] [Accepted: 02/16/2024] [Indexed: 03/14/2024]
Abstract
Halide perovskite materials have attracted worldwide attention in the photovoltaic area due to the rapid improvement in efficiency, from less than 4% in 2009 to 26.1% in 2023 with only a nanometer lever photo-active layer. Meanwhile, this nova star found applications in many other areas, such as light emitting, sensor, etc. This review started with the fundamentals of physics and chemistry behind the excellent performance of halide perovskite materials for photovoltaic/light emitting and the methods for preparing them. Then, it described the basic principles for solar cells and light emitting devices. It summarized the strategies including nanotechnology to improve the performance and the application of halide perovskite materials in these two areas: from structure-property relation to how each component in the devices affects the overall performance. Moreover, this review listed the challenges for the future applications of halide perovskite materials.
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Affiliation(s)
- Maoding Cheng
- School of Material Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212100, China
- Department of Chemistry and Physics, University of Arkansas at Pine Bluff, Pine Bluff, AR 71601, USA
| | - Jingtian Jiang
- School of Material Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212100, China
| | - Chao Yan
- School of Material Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212100, China
| | - Yuankun Lin
- Department of Physics, University of North Texas, Denton, TX 76203, USA
| | - Mansour Mortazavi
- Department of Chemistry and Physics, University of Arkansas at Pine Bluff, Pine Bluff, AR 71601, USA
| | - Anupama B Kaul
- Department of Electrical Engineering, University of North Texas, Denton, TX 76207, USA
| | - Qinglong Jiang
- Department of Chemistry and Physics, University of Arkansas at Pine Bluff, Pine Bluff, AR 71601, USA
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4
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Hu M, Zhang Y, Meng N, Wang W, Lu Y, Dong J, Zhao S, Qiao B, Song D, Xu Z. Modulation Phase Distribution of Ruddlesden-Popper Quasi-2D Perovskites with a Similarly Spaced Dion-Jacobson Phase. ACS APPLIED MATERIALS & INTERFACES 2023; 15:42706-42716. [PMID: 37646254 DOI: 10.1021/acsami.3c03110] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/01/2023]
Abstract
Quasi-two-dimensional (quasi-2D) perovskites exhibit excellent performance when applied to light-emitting diodes (LEDs). However, quasi-2D perovskite films generally have nonuniform n phases and irregular internal crystal structures, which degrade the device's performance. Here, we propose using a Dion-Jacobson (DJ)-type organic spacer to modulate the phase distribution of the Ruddlesden-Popper (RP) quasi-2D perovskite. A DJ-type organic spacer cation, 1.6-hexamethylenediamine (HDABr2), was introduced into the perovskite as the second spacer cation with propylamine hydrobromide (PABr). As DJ-type and RP-type perovskites have similar spacings, RP-DJ style does not cause a chaotic crystalline structure; instead, it modulates the perovskite crystallization and narrows the phase distribution. In parallel, there is a substantial improvement in the maximum luminance, current efficiency, external quantum efficiency, and device stability of the quasi-2D perovskite LEDs. This work provides a novel concept for combining the organic spacer cations for quasi-2D perovskites.
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Affiliation(s)
- Mengli Hu
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Yu Zhang
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Ning Meng
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Wei Wang
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Yao Lu
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Jie Dong
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Suling Zhao
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Bo Qiao
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Dandan Song
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Zheng Xu
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China
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5
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Liu Y, Wang C, Chen G, Wang S, Yu Z, Wang T, Ke W, Fang G. A generic lanthanum doping strategy enabling efficient lead halide perovskite luminescence for backlights. Sci Bull (Beijing) 2023:S2095-9273(23)00277-3. [PMID: 37127489 DOI: 10.1016/j.scib.2023.04.023] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/12/2023] [Revised: 03/18/2023] [Accepted: 04/17/2023] [Indexed: 05/03/2023]
Abstract
Metal halide perovskites films have attracted great interest because of their solution-proceed fabrication and potential applications for next-generation displays. However, their non-ideal photoluminescence quantum efficiency (PLQE) and stability still does not meet the requirements of displays. Here, we adopt lanthanum ion (La3+) doping strategy to enhance its luminescence performance and the possibility of taking it to commercialization. In addition to the entry of lanthanum ions into the lattice to greatly improve the crystal quality, the excess La3+ gives rise to the formation of newly developed formamidinium cesium lanthanum bromine, (FA, Cs)2LaBr5, which provides additional energy transport pathways, therefore concentrating more energy onto the perovskite host. Consequently, a near-unity PLQE of 99.5% is realized in standardized green-emission cesium (Cs)/formamidinium (FA) mixed FA0.7Cs0.3PbBr3 perovskite films. The introduction of La3+ can also lead to markedly stability with nearly 1000 days' shelf storage half-lifetime and 400 hours' light-irradiation T90 lifetime as well as much-enhanced color purity. Moreover, the films with La3+ doping enable full-visible spectral enhancement and high-performance white light emission and trichromatic luminescence with 98.9% coverage of the color gamut area required for the Rec. 2020 standard, which suggest that perovskite films have great application potential for backlights in liquid crystal display technologies.
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Affiliation(s)
- Yongjie Liu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Cheng Wang
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Guoyi Chen
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Shuxin Wang
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Zhiqiu Yu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Ti Wang
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Weijun Ke
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China.
| | - Guojia Fang
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China.
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Shin D, Lai M, Shin Y, Du JS, Jibril L, Rondinelli JM, Mirkin CA. From Heterostructures to Solid-Solutions: Structural Tunability in Mixed Halide Perovskites. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2205923. [PMID: 36205651 DOI: 10.1002/adma.202205923] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/29/2022] [Revised: 09/24/2022] [Indexed: 06/16/2023]
Abstract
The stability, reliability, and performance of halide-perovskite-based devices depend upon the structure, composition, and particle size of the device-enabling materials. Indeed, the degree of ion mixing in multicomponent perovskite crystals, although challenging to control, is a key factor in determining properties. Herein, an emerging method termed evaporation-crystallization polymer pen lithography is used to synthesize and systematically study the degree of ionic mixing of Cs0.5 FA0.5 PbX3 (FA = formamidinium; X = halide anion, ABX3 ) crystals, as a function of size, temperature, and composition. These experiments have led to the discovery of a heterostructure morphology where the A-site cations, Cs and FA, are segregated into the core and edge layers, respectively. Simulation and experimental results indicate that the heterostructures form as a consequence of a combination of both differences in solubility of the two ions in solution and the enthalpic preference for Cs-FA ion segregation. This preference for segregation can be overcome to form a solid-solution by decreasing crystal size (<60 nm) or increasing temperature. Finally, these tools are utilized to identify and synthesize solid-solution nanocrystals of Cs0.5 FA0.5 Pb(Br/I)3 that significantly suppress photoinduced anion migration compared to their bulk counterparts, offering a route to deliberately designed photostable optoelectronic materials.
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Affiliation(s)
- Donghoon Shin
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA
- International Institute for Nanotechnology, Northwestern University, Evanston, IL, 60208, USA
| | - Minliang Lai
- International Institute for Nanotechnology, Northwestern University, Evanston, IL, 60208, USA
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
| | - Yongjin Shin
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA
- International Institute for Nanotechnology, Northwestern University, Evanston, IL, 60208, USA
| | - Jingshan S Du
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA
- International Institute for Nanotechnology, Northwestern University, Evanston, IL, 60208, USA
| | - Liban Jibril
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA
- International Institute for Nanotechnology, Northwestern University, Evanston, IL, 60208, USA
| | - James M Rondinelli
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA
- International Institute for Nanotechnology, Northwestern University, Evanston, IL, 60208, USA
| | - Chad A Mirkin
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA
- International Institute for Nanotechnology, Northwestern University, Evanston, IL, 60208, USA
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
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7
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Kim JS, Heo JM, Park GS, Woo SJ, Cho C, Yun HJ, Kim DH, Park J, Lee SC, Park SH, Yoon E, Greenham NC, Lee TW. Ultra-bright, efficient and stable perovskite light-emitting diodes. Nature 2022; 611:688-694. [PMID: 36352223 DOI: 10.1038/s41586-022-05304-w] [Citation(s) in RCA: 186] [Impact Index Per Article: 93.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/19/2021] [Accepted: 09/01/2022] [Indexed: 11/11/2022]
Abstract
Metal halide perovskites are attracting a lot of attention as next-generation light-emitting materials owing to their excellent emission properties, with narrow band emission1-4. However, perovskite light-emitting diodes (PeLEDs), irrespective of their material type (polycrystals or nanocrystals), have not realized high luminance, high efficiency and long lifetime simultaneously, as they are influenced by intrinsic limitations related to the trade-off of properties between charge transport and confinement in each type of perovskite material5-8. Here, we report an ultra-bright, efficient and stable PeLED made of core/shell perovskite nanocrystals with a size of approximately 10 nm, obtained using a simple in situ reaction of benzylphosphonic acid (BPA) additive with three-dimensional (3D) polycrystalline perovskite films, without separate synthesis processes. During the reaction, large 3D crystals are split into nanocrystals and the BPA surrounds the nanocrystals, achieving strong carrier confinement. The BPA shell passivates the undercoordinated lead atoms by forming covalent bonds, and thereby greatly reduces the trap density while maintaining good charge-transport properties for the 3D perovskites. We demonstrate simultaneously efficient, bright and stable PeLEDs that have a maximum brightness of approximately 470,000 cd m-2, maximum external quantum efficiency of 28.9% (average = 25.2 ± 1.6% over 40 devices), maximum current efficiency of 151 cd A-1 and half-lifetime of 520 h at 1,000 cd m-2 (estimated half-lifetime >30,000 h at 100 cd m-2). Our work sheds light on the possibility that PeLEDs can be commercialized in the future display industry.
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Affiliation(s)
- Joo Sung Kim
- Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea
| | - Jung-Min Heo
- Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea
| | - Gyeong-Su Park
- Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea.,Research Institute of Advanced Materials, Seoul National University, Seoul, Republic of Korea.,Institute of Next-Generation Semiconductor Convergence Technology, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, Republic of Korea
| | - Seung-Je Woo
- Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea
| | - Changsoon Cho
- Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge, UK
| | - Hyung Joong Yun
- Advanced Nano Research Group, Korea Basic Science Institute (KBSI), Daejeon, Republic of Korea
| | - Dong-Hyeok Kim
- Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea
| | - Jinwoo Park
- Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea
| | - Seung-Chul Lee
- PEROLED Co. Ltd., Seoul, Republic of Korea.,Soft Foundry, Seoul National University, Seoul, Republic of Korea
| | - Sang-Hwan Park
- Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea
| | - Eojin Yoon
- Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea
| | - Neil C Greenham
- Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge, UK
| | - Tae-Woo Lee
- Department of Materials Science and Engineering, Seoul National University, Seoul, Republic of Korea. .,Research Institute of Advanced Materials, Seoul National University, Seoul, Republic of Korea. .,Soft Foundry, Seoul National University, Seoul, Republic of Korea. .,School of Chemical and Biological Engineering, Institute of Engineering Research, Seoul National University, Seoul, Republic of Korea.
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8
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Bhatia H, Ghosh B, Debroye E. Colloidal FAPbBr 3 perovskite nanocrystals for light emission: what's going on? JOURNAL OF MATERIALS CHEMISTRY. C 2022; 10:13437-13461. [PMID: 36324302 PMCID: PMC9521414 DOI: 10.1039/d2tc01373h] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/04/2022] [Accepted: 05/06/2022] [Indexed: 06/16/2023]
Abstract
Semiconducting nanomaterials have been widely explored in diverse optoelectronic applications. Colloidal lead halide perovskite nanocrystals (NCs) have recently been an excellent addition to the field of nanomaterials, promising an enticing building block in the field of light emission. In addition to the notable optoelectronic properties of perovskites, the colloidal NCs exhibit unique size-dependent optical properties due to the quantum size effect, which makes them highly attractive for light-emitting diodes (LEDs). In the past few years, perovskite-based LEDs (PeLEDs) have demonstrated a meteoritic rise in their external quantum efficiency (EQE) values, reaching over 20% so far. Among various halide perovskite compositions, FAPbBr3 and its variants remain one of the most interesting and sought-after compounds for green light emission. This review focuses on recent progress in the design and synthesis protocols of colloidal FAPbBr3 NCs and the emerging concepts in tailoring their surface chemistry. The structural and physicochemical features of lead halide perovskites along with a comprehensive discussion on their defect-tolerant properties are briefly outlined. Later, the prevalent synthesis, ligand, and compositional engineering strategies to boost the stability and photoluminescence quantum yield (PLQY) of FAPbBr3 NCs are extensively discussed. Finally, the fundamental concepts and recent progress on FAPbBr3-based LEDs, followed by a discussion of the challenges and prospects that are on the table for this enticing class of perovskites, are reviewed.
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Affiliation(s)
- Harshita Bhatia
- Department of Chemistry, KU Leuven Celestijnenlaan 200F B-3001 Leuven Belgium
| | - Biplab Ghosh
- cMACS, Department of Microbial and Molecular Systems, KU Leuven Celestijnenlaan 200F B-3001 Leuven Belgium
| | - Elke Debroye
- Department of Chemistry, KU Leuven Celestijnenlaan 200F B-3001 Leuven Belgium
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9
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Mishra JK, Yantara N, Kanwat A, Furuhashi T, Ramesh S, Salim T, Jamaludin NF, Febriansyah B, Ooi ZE, Mhaisalkar S, Sum TC, Hippalgaonkar K, Mathews N. Defect Passivation Using a Phosphonic Acid Surface Modifier for Efficient RP Perovskite Blue-Light-Emitting Diodes. ACS APPLIED MATERIALS & INTERFACES 2022; 14:34238-34246. [PMID: 35604015 DOI: 10.1021/acsami.2c00899] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Defect management strategies are vital for enhancing the performance of perovskite-based optoelectronic devices, such as perovskite-based light-emitting diodes (PeLEDs). As additives can fucntion both as acrystallization modifier and/or defect passivator, a thorough study on the roles of additives is essential, especially for blue emissive Pe-LEDs, where the emission is strictly controlled by the n-domain distribution of the Ruddlesden-Popper (RP, L2An-1PbnX3n+1, where L refers to a bulky cation, while A and X are monovalent cation, and halide anion, respectively) perovskite films. Of the various additives that are available, octyl phosphonic acid (OPA) is of immense interest because of its ability to bind with uncoordinated Pb2+ ( notorious for nonradiative recombination) and therefore passivates them. Here, with the help of various spectroscopic techniques, such as X-ray photon-spectroscopy (XPS), Fourier-transform infrared spectroscopy (FTIR), and photoluminescence quantum yield (PLQY) measurements, we demonstrate the capability of OPA to bind and passivate unpaired Pb2+ defect sites. Modification to crystallization promoting higher n-domain formation is also observed from steady-state and transient absorption (TA) measurements. With OPA treatment, both the PLQY and EQE of the corresponding PeLED showed improvements up to 53% and 3.7% at peak emission wavelength of 485 nm, respectively.
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Affiliation(s)
- Jayanta Kumar Mishra
- Energy Research Institute @ NTU (ERI@N), Nanyang Technological University, 50 Nanyang Drive, Singapore 637553, Singapore
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Natalia Yantara
- Energy Research Institute @ NTU (ERI@N), Nanyang Technological University, 50 Nanyang Drive, Singapore 637553, Singapore
| | - Anil Kanwat
- Energy Research Institute @ NTU (ERI@N), Nanyang Technological University, 50 Nanyang Drive, Singapore 637553, Singapore
| | - Tomoki Furuhashi
- School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Sankaran Ramesh
- School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
- Energy Research Institute @NTU (ERI@N), Interdisciplinary Graduate Programme, Nanyang Technological University, 50 Nanyang Avenue, S2-B3a-01, Singapore 639798, Singapore
| | - Teddy Salim
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Nur Fadilah Jamaludin
- Energy Research Institute @ NTU (ERI@N), Nanyang Technological University, 50 Nanyang Drive, Singapore 637553, Singapore
| | - Benny Febriansyah
- Energy Research Institute @ NTU (ERI@N), Nanyang Technological University, 50 Nanyang Drive, Singapore 637553, Singapore
- Berkeley Educational Alliance for Research in Singapore (BEARS), Ltd., 1 CREATE Way, Singapore 138602, Singapore
| | - Zi En Ooi
- Institute of Materials Research & Engineering, Agency for Science, Technology and Research (A* STAR), Singapore 138632, Singapore
| | - Subodh Mhaisalkar
- Energy Research Institute @ NTU (ERI@N), Nanyang Technological University, 50 Nanyang Drive, Singapore 637553, Singapore
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Tze Chien Sum
- School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Kedar Hippalgaonkar
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
- Institute of Materials Research & Engineering, Agency for Science, Technology and Research (A* STAR), Singapore 138632, Singapore
| | - Nripan Mathews
- Energy Research Institute @ NTU (ERI@N), Nanyang Technological University, 50 Nanyang Drive, Singapore 637553, Singapore
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
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10
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Hu L, Zhao W, Duan W, Chen G, Fan B, Zhang X. Temperature-Dependent Optical Properties of Perovskite Quantum Dots with Mixed-A-Cations. MICROMACHINES 2022; 13:457. [PMID: 35334748 PMCID: PMC8955971 DOI: 10.3390/mi13030457] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/20/2022] [Revised: 03/07/2022] [Accepted: 03/14/2022] [Indexed: 02/03/2023]
Abstract
In this work, metal halide perovskite quantum dots (QDs) with Formamidinium (FA) and Cs mixed cations were fabricated using a solution-processed method at room temperature. By controlling Cs doping ratios in a precursor, the optical properties of mixed-cation perovskite QDs were systematically studied. With the increase in Cs ion doping, the photoluminescence (PL) spectra of perovskite QDs were blueshifted, which was mainly due to the smaller radius of Cs ions than those of FA. Temperature-dependent PL spectra were conducted on mixed-cation perovskite QDs. As the temperature gradually increased from 4 K to 300 K, PL peaks were blue shifted, and full-width at half maximum (FWHM) was widened, which was directly related to lattice thermal expansion and the carrier-photon coupling effect under temperature variation. At the same time, excess Cs ion doping had a prominent influence on optical properties at low temperatures, which was mainly due to the introduction of detrimental defects in perovskite crystals. Therefore, it is particularly important to control doping concentration in the preparation of high-quality perovskite QDs and efficient photoelectric devices.
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Affiliation(s)
- Lei Hu
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong University of Technology, Guangzhou 510006, China; (L.H.); (W.D.)
| | - Weiren Zhao
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong University of Technology, Guangzhou 510006, China; (L.H.); (W.D.)
| | - Weijia Duan
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong University of Technology, Guangzhou 510006, China; (L.H.); (W.D.)
| | - Guojie Chen
- Guangdong-Hongkong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, School of Physics and Optoelectronic Engineering, Foshan University, Foshan 528225, China;
| | - Bingfeng Fan
- Guangdong-Hongkong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, School of Physics and Optoelectronic Engineering, Foshan University, Foshan 528225, China;
| | - Xiaoli Zhang
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong University of Technology, Guangzhou 510006, China; (L.H.); (W.D.)
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11
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Ašmontas S, Čerškus A, Gradauskas J, Grigucevičienė A, Juškėnas R, Leinartas K, Lučun A, Petrauskas K, Selskis A, Sužiedėlis A, Širmulis E. Impact of Cesium Concentration on Optoelectronic Properties of Metal Halide Perovskites. MATERIALS (BASEL, SWITZERLAND) 2022; 15:1936. [PMID: 35269167 PMCID: PMC8911591 DOI: 10.3390/ma15051936] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/18/2022] [Revised: 02/22/2022] [Accepted: 03/01/2022] [Indexed: 02/01/2023]
Abstract
Performance of a perovskite solar cell is largely influenced by the optoelectronic properties of metal halide perovskite films. Here we study the influence of cesium concentration on morphology, crystal structure, photoluminescence and optical properties of the triple cation perovskite film. Incorporation of small amount (x = 0.1) of cesium cations into Csx(MA0.17FA0.83)1−x Pb(I0.83Br0.17)3 leads to enhanced power conversion efficiency (PCE) of the solar cell resulting mainly from significant rise of the short-current density and the fill factor value. Further increase of Cs concentration (x > 0.1) decreases the film’s phase purity, carrier lifetime and correspondingly reduces PCE of the solar cell. Higher concentration of Cs (x ≥ 0.2) causes phase segregation of the perovskite alongside with formation of Cs-rich regions impeding light absorption.
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Affiliation(s)
- Steponas Ašmontas
- Center for Physical Sciences and Technology, Savanorių Ave. 231, LT-02300 Vilnius, Lithuania; (A.Č.); (J.G.); (A.G.); (R.J.); (K.L.); (A.L.); (K.P.); (A.S.); (A.S.); (E.Š.)
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12
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Lian Y, Yang Y, Gao J, Qin C. Efficient Dion-Jacobson perovskite light-emitting diodes via mixed cation engineering. OPTICS LETTERS 2022; 47:657-660. [PMID: 35103700 DOI: 10.1364/ol.445440] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/22/2021] [Accepted: 12/09/2021] [Indexed: 06/14/2023]
Abstract
Quasi-two-dimensional (quasi-2D) perovskites with high exciton binding energy (Eb) can confine carriers to form an energy funnel cascade, accelerate carrier localization to the emitting domain, and decrease nonradiative recombination loss. Herein, it is shown that partially alloying Cs+ cations into formamidinium (FA)-based Dion-Jacobson (DJ) perovskites and adjusting the stoichiometric ratio can simultaneously modify the tolerance factor, decrease the phase formation enthalpy, improve the morphology, modulate the phase distribution, and boost the current efficiency. By incorporating CsBr to substitute for some of the FABr, perovskite films with narrower phase distributions and fewer defects are obtained, and the current efficiency is boosted from 18.2 to 25.3 cd/A. A high current efficiency of 42.1 cd/A, a record (as far as we are aware) external quantum efficiency (EQE) of 10.5%, and a maximum luminance of 18600 cd/m2 with an emission peak at 529 nm are obtained when the Lewis base passivation agent TPBi is dissolved in the antisolvent. This is the first time, to the best of the authors' knowledge, that efficient 1,4-phenyldimethylammonium dibromide (PHDMADBr)-based green-light DJ perovskite light emitting diodes (PeLEDs) based on mixed Cs+ and FA+ cations have been fabricated.
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13
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Zeng Q, Luo X, Du Y, Jiang J, Yang L, Zhao H, Shi H, Li Y. Ionic liquid-induced in situ deposition of perovskite quantum dot films with a photoluminescence quantum yield of over 85. NANOSCALE 2021; 13:20067-20077. [PMID: 34846058 DOI: 10.1039/d1nr05528c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Metal halide perovskite quantum dots (QDs) hold great promise as building blocks for next-generation light emitting devices (LEDs). The preparation of perovskite QD films with high photoluminescence quantum yield (PLQY) is the key to realizing efficient LEDs. However, the conventional deposition method of spin-coating of pre-synthesized QD ink solutions results in perovskite QD films with low PLQY (typically <45%) due to non-radiative recombination centers induced in the deposition process. Here, by utilizing the ionic nature and steric hindrance effect of the ionic liquid, we demonstrate an in situ deposition method for perovskite QD films with high PLQY by directly spin-coating precursor solutions containing an ionic liquid. Furthermore, mechanistic study reveals that the ionic liquid not only induces the formation of QDs but also suppresses defect-related recombination through the interaction with uncoordinated metal atoms on the surface of the QDs. As a result, the in situ deposited CsPbBr3 QD film with a PLQY as high as 85.2% and long-term air stability is achieved. These findings demonstrate that the introduction of an ionic liquid provides an effective strategy to enhance the performance of in situ formed perovskite QD films, which could benefit the development of efficient LEDs and other optoelectronic devices.
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Affiliation(s)
- Qiugui Zeng
- Yangtza Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China.
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Xin Luo
- Yangtza Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China.
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Yiying Du
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Jiexuan Jiang
- Yangtza Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China.
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Lin Yang
- School of Chemical Engineering, Sichuan University, Chengdu 610065, China
| | - Hui Zhao
- School of Chemical Engineering, Sichuan University, Chengdu 610065, China
| | - Heping Shi
- School of Chemistry and Chemical Engineering, Shanxi University, Taiyuan 030006, China
| | - Yanbo Li
- Yangtza Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China.
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
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14
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Zhang L, Yuan F, Jiao B, Dong H, Li J, Wu Z. Exploiting a Multiphase Pure Formamidinium Lead Perovskite for Efficient Green-Light-Emitting Diodes. ACS APPLIED MATERIALS & INTERFACES 2021; 13:23067-23073. [PMID: 33970596 DOI: 10.1021/acsami.1c00116] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Formamidinium (FA)-based perovskites have demonstrated excellent advances in optoelectronics recently, but in terms of perovskite compounds, the optimal condition of their composition optimization remains controversial. Herein, we boosted the performance of perovskite light-emitting diodes (PeLEDs) in both efficiency and stability through composition and phase engineering. The low-dimensional FA2PbBr4 particles emerged and mixed with the FAPbBr3 composites when the FABr content is excessive. By regulating the phase composition in multiphase FAPbBr3 perovskites, the maximum external quantum efficiency (EQEmax) of optimal PeLEDs (5.14%) is 2.7-fold higher than that of pure FAPbBr3-based PeLEDs (1.90%), and device stability is improved. Further optimizing the film quality and emission efficiency with Rb+ ions, the EQEmax of PeLEDs can be increased to 6.01%, with a half-lifetime of about 185 s under the high current density. This strategy of phase composition optimization in FA-based perovskites provides an effective way to process high-efficiency and stable PeLEDs.
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Affiliation(s)
- Lin Zhang
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Fang Yuan
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Bo Jiao
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Hua Dong
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Jingrui Li
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Zhaoxin Wu
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
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15
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Sun C, Jiang Y, Cui M, Qiao L, Wei J, Huang Y, Zhang L, He T, Li S, Hsu HY, Qin C, Long R, Yuan M. High-performance large-area quasi-2D perovskite light-emitting diodes. Nat Commun 2021; 12:2207. [PMID: 33850141 PMCID: PMC8044177 DOI: 10.1038/s41467-021-22529-x] [Citation(s) in RCA: 85] [Impact Index Per Article: 28.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/10/2021] [Accepted: 03/18/2021] [Indexed: 12/18/2022] Open
Abstract
Serious performance decline arose for perovskite light-emitting diodes (PeLEDs) once the active area was enlarged. Here we investigate the failure mechanism of the widespread active film fabrication method; and ascribe severe phase-segregation to be the reason. We thereby introduce L-Norvaline to construct a COO--coordinated intermediate phase with low formation enthalpy. The new intermediate phase changes the crystallization pathway, thereby suppressing the phase-segregation. Accordingly, high-quality large-area quasi-2D films with desirable properties are obtained. Based on this, we further rationally adjusted films' recombination kinetics. We reported a series of highly-efficient green quasi-2D PeLEDs with active areas of 9.0 cm2. The peak EQE of 16.4% is achieved in = 3, represent the most efficient large-area PeLEDs yet. Meanwhile, high brightness device with luminance up to 9.1 × 104 cd m-2 has achieved in = 10 film.
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Affiliation(s)
- Changjiu Sun
- Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Renewable Energy Conversion and Storage Center (RECAST), College of Chemistry, Nankai University, Tianjin, P. R. China
| | - Yuanzhi Jiang
- Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Renewable Energy Conversion and Storage Center (RECAST), College of Chemistry, Nankai University, Tianjin, P. R. China
| | - Minghuan Cui
- Henan Key Laboratory of Infrared Materials and Spectrum Measures and Applications, School of Physics, Henan Normal University, Xinxiang, P. R. China
| | - Lu Qiao
- Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, College of Chemistry, Beijing Normal University, Beijing, P. R. China
| | - Junli Wei
- Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Renewable Energy Conversion and Storage Center (RECAST), College of Chemistry, Nankai University, Tianjin, P. R. China
| | - Yanmin Huang
- Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Renewable Energy Conversion and Storage Center (RECAST), College of Chemistry, Nankai University, Tianjin, P. R. China
| | - Li Zhang
- Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Renewable Energy Conversion and Storage Center (RECAST), College of Chemistry, Nankai University, Tianjin, P. R. China
| | - Tingwei He
- Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Renewable Energy Conversion and Storage Center (RECAST), College of Chemistry, Nankai University, Tianjin, P. R. China
| | - Saisai Li
- Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Renewable Energy Conversion and Storage Center (RECAST), College of Chemistry, Nankai University, Tianjin, P. R. China
| | - Hsien-Yi Hsu
- School of Energy and Environment & Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, P. R. China
| | - Chaochao Qin
- Henan Key Laboratory of Infrared Materials and Spectrum Measures and Applications, School of Physics, Henan Normal University, Xinxiang, P. R. China
| | - Run Long
- Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, College of Chemistry, Beijing Normal University, Beijing, P. R. China
| | - Mingjian Yuan
- Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Renewable Energy Conversion and Storage Center (RECAST), College of Chemistry, Nankai University, Tianjin, P. R. China.
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16
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Park YR, Eom S, Kim HH, Choi WK, Kang Y. Self-defect-passivation by Br-enrichment in FA-doped Cs 1-xFA xPbBr 3 quantum dots: towards high-performance quantum dot light-emitting diodes. Sci Rep 2020; 10:14758. [PMID: 32901051 PMCID: PMC7479606 DOI: 10.1038/s41598-020-71666-8] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/29/2020] [Accepted: 04/21/2020] [Indexed: 11/09/2022] Open
Abstract
Halide vacancy defect is one of the major origins of non-radiative recombination in the lead halide perovskite light emitting devices (LEDs). Hence the defect passivation is highly demanded for the high-performance perovskite LEDs. Here, we demonstrated that FA doping led to the enrichment of Br in Cs1−xFAxPbBr3 QDs. Due to the defect passivation by the enriched Br, the trap density in Cs1−xFAxPbBr3 significantly decreased after FA doping, and which improved the optical properties of Cs1−xFAxPbBr3 QDs and their QD-LEDs. PLQY of Cs1–xFAxPbBr3 QDs increased from 76.8% (x = 0) to 85.1% (x = 0.04), and Lmax and CEmax of Cs1–xFAxPbBr3 QD-LEDs were improved from Lmax = 2880 cd m−2 and CEmax = 1.98 cd A−1 (x = 0) to Lmax = 5200 cd m−2 and CEmax = 3.87 cd A−1 (x = 0.04). Cs1–xFAxPbBr3 QD-LED device structure was optimized by using PVK as a HTL and ZnO modified with b-PEI as an ETL. The energy band diagram of Cs1–xFAxPbBr3 QD-LEDs deduced by UPS analyses.
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Affiliation(s)
- Young Ran Park
- Institute of Nano Science and Technology (INST), Hanyang University, Seongdong-gu, Seoul, 04763, South Korea
| | - Sangwon Eom
- Department of Chemistry, Hanyang University, Seongdong-gu, Seoul, 04763, South Korea
| | - Hong Hee Kim
- Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology (KIST), Seongbuk-gu, Seoul, 02792, South Korea.,Department of Materials Science and Engineering, Yonsei University, Seodaemun-gu, Seoul, 03722, South Korea
| | - Won Kook Choi
- Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology (KIST), Seongbuk-gu, Seoul, 02792, South Korea
| | - Youngjong Kang
- Institute of Nano Science and Technology (INST), Hanyang University, Seongdong-gu, Seoul, 04763, South Korea. .,Department of Chemistry, Hanyang University, Seongdong-gu, Seoul, 04763, South Korea. .,Research Institute for Natural Sciences, Hanyang University, Seoul, 04763, South Korea.
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17
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Xia P, Lu Y, Li Y, Zhang W, Shen W, Qian J, Wu Y, Zhu W, Yu H, Liu L, Deng L, Chen S. Solution-Processed Quasi-Two-Dimensional/Nanoscrystals Perovskite Composite Film Enhances the Efficiency and Stability of Perovskite Light-Emitting Diodes. ACS APPLIED MATERIALS & INTERFACES 2020; 12:39720-39729. [PMID: 32816445 DOI: 10.1021/acsami.0c07547] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Solution-processed quasi-two-dimensional (Q-2D)/colloidal perovskite nanocrystals (PNCs) perovskite composite films are first prepared as the emitting layers of perovskite light-emitting diodes (PeLEDs). The subsequent multi-spin-coating of PNCs not only fills the gully-like fluctuations of the nanocrystal pinning-prepared Q-2D perovskite films and decreases their surface roughness but also transforms the bilayer perovskite nanosheets into multilayer ones, thus improving the charge transport and reducing the hole-injection barrier in the composite films. More importantly, the bromide vacancies and Pb defects in the Q-2D perovskites are removed via Br- supply and Pb-OOC-R interaction, in which the Br ions and COO- groups (from oleic acid) come from the PNC solution, and the radiation recombination is significantly enhanced. Based on the Q-2D/PNCs perovskite composite emitter, the PeLEDs achieve a maximum luminescence of ∼2.0 × 104 cd/m2 and a peak current efficiency of 27.5 cd/A, showing 175 and 337% enhancements compared to the control device with the pristine Q-2D perovskite emitter. The lifetime for the luminance decaying to 50% of the initial intensity increases by a factor of 13.8, demonstrating that the device stability is also improved by the Q-2D/PNCs perovskite composite film.
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Affiliation(s)
- Pengfei Xia
- Key Laboratory for Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, China
- College of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts & Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, China
| | - Yao Lu
- Key Laboratory for Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, China
| | - Yongzhe Li
- College of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts & Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, China
| | - Wenzhu Zhang
- Key Laboratory for Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, China
| | - Wei Shen
- Key Laboratory for Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, China
| | - Jie Qian
- Key Laboratory for Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, China
| | - Ya'nan Wu
- Key Laboratory for Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, China
| | - Wenjing Zhu
- Key Laboratory for Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, China
| | - Hongtao Yu
- Key Laboratory for Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, China
| | - Lihui Liu
- Key Laboratory for Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, China
| | - Lingling Deng
- Key Laboratory for Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, China
- College of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts & Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, China
| | - Shufen Chen
- Key Laboratory for Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210023, China
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China
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18
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Burlakov VM, Hassan Y, Danaie M, Snaith HJ, Goriely A. Competitive Nucleation Mechanism for CsPbBr 3 Perovskite Nanoplatelet Growth. J Phys Chem Lett 2020; 11:6535-6543. [PMID: 32667805 DOI: 10.1021/acs.jpclett.0c01794] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
We analyze nucleation-controlled nanocrystal growth in a solution containing surface-binding molecular ligands, which can also nucleate compact layers on the crystal surfaces. We show that, if the critical nucleus size for ligands is larger and the nucleation barrier is lower than those for crystal atoms, the ligands nucleate faster than the atoms on relatively wide crystal facets but much slower, if at all, on narrow facets. Such competitive nucleation of ligands and atoms results in ligands covering predominantly wider facets, thus excluding them from the growth process, and acts as a selection mechanism for the growth of crystals with narrower facets, the so-called nanoplatelets. The theory is confirmed by Monte Carlo simulations and validated experimentally for CsPbBr3 nanoplatelets grown from solution. We find that the anisotropic crystal growth is controlled by the growth temperature and the strength of surface bonding for the passivating molecular ligands.
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Affiliation(s)
- Victor M Burlakov
- Linacre College, University of Oxford, Oxford, OX1 3JA, U.K
- Mathematical Institute, Woodstock Road, Andrew Wiles Building, University of Oxford, Oxford, OX2 6GG, U.K
| | - Yasser Hassan
- Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, U.K
| | - Mohsen Danaie
- Diamond Light Source Ltd., Electron Physical Science Imaging Centre (ePSIC), Harwell Science & Innovation Campus, Didcot, OX11 0DE, U.K
| | - Henry J Snaith
- Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, U.K
| | - Alain Goriely
- Mathematical Institute, Woodstock Road, Andrew Wiles Building, University of Oxford, Oxford, OX2 6GG, U.K
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19
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Kim YH, Zhai Y, Gaulding EA, Habisreutinger SN, Moot T, Rosales BA, Lu H, Hazarika A, Brunecky R, Wheeler LM, Berry JJ, Beard MC, Luther JM. Strategies to Achieve High Circularly Polarized Luminescence from Colloidal Organic-Inorganic Hybrid Perovskite Nanocrystals. ACS NANO 2020; 14:8816-8825. [PMID: 32644773 PMCID: PMC10906077 DOI: 10.1021/acsnano.0c03418] [Citation(s) in RCA: 55] [Impact Index Per Article: 13.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/15/2023]
Abstract
Colloidal metal halide perovskite nanocrystals (NCs) with chiral ligands are outstanding candidates as a circularly polarized luminescence (CPL) light source due to many advantages such as high photoluminescence quantum efficiency, large spin-orbit coupling, and extensive tunability via composition and choice of organic ligands. However, achieving pronounced and controllable polarized light emission remains challenging. Here, we develop strategies to achieve high CPL responses from colloidal formamidinium lead bromide (FAPbBr3) NCs at room temperature using chiral surface ligands. First, we show that replacing a portion of typical ligands (oleylamine) with short chiral ligands ((R)-2-octylamine) during FAPbBr3 NC synthesis results in small and monodisperse NCs that yield high CPL with average luminescence dissymmetry g-factor, glum = 6.8 × 10-2. To the best of our knowledge, this is the highest among reported perovskite materials at room temperature to date and represents around 10-fold improvement over the previously reported colloidal CsPbClxBryI3-x-y NCs. In order to incorporate NCs into any optoelectronic or spintronic application, the NCs necessitate purification, which removes a substantial amount of the chiral ligands and extinguishes the CPL signals. To circumvent this issue, we also developed a postsynthetic ligand treatment using a different chiral ligand, (R-/S-)methylbenzylammonium bromide, which also induces a CPL with an average glum = ±1.18 × 10-2. This postsynthetic method is also amenable for long-range charge transport since methylbenzylammonium is quite compact in relation to other surface ligands. Our demonstrations of high CPL and glum from both as-synthesized and purified perovskite NCs at room temperature suggest a route to demonstrate colloidal NC-based spintronics.
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Affiliation(s)
- Young-Hoon Kim
- National
Renewable Energy Laboratory, Golden, Colorado 80401, United States
| | - Yaxin Zhai
- National
Renewable Energy Laboratory, Golden, Colorado 80401, United States
| | - E. Ashley Gaulding
- National
Renewable Energy Laboratory, Golden, Colorado 80401, United States
| | | | - Taylor Moot
- National
Renewable Energy Laboratory, Golden, Colorado 80401, United States
| | - Bryan A. Rosales
- National
Renewable Energy Laboratory, Golden, Colorado 80401, United States
| | - Haipeng Lu
- National
Renewable Energy Laboratory, Golden, Colorado 80401, United States
| | - Abhijit Hazarika
- National
Renewable Energy Laboratory, Golden, Colorado 80401, United States
| | - Roman Brunecky
- National
Renewable Energy Laboratory, Golden, Colorado 80401, United States
| | - Lance M. Wheeler
- National
Renewable Energy Laboratory, Golden, Colorado 80401, United States
| | - Joseph J. Berry
- National
Renewable Energy Laboratory, Golden, Colorado 80401, United States
| | - Matthew C. Beard
- National
Renewable Energy Laboratory, Golden, Colorado 80401, United States
| | - Joseph M. Luther
- National
Renewable Energy Laboratory, Golden, Colorado 80401, United States
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20
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Payandeh M, Ahmadi V, Arabpour Roghabadi F, Nazari P, Ansari F, Brenner P, Bäuerle R, Jakoby M, Lemmer U, Howard IA, Richards BS, Paetzold UW, Abdollahi Nejand B. High-Brightness Perovskite Light-Emitting Diodes Using a Printable Silver Microflake Contact. ACS APPLIED MATERIALS & INTERFACES 2020; 12:11428-11437. [PMID: 32000490 DOI: 10.1021/acsami.9b18527] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Achieving efficient devices while maintaining a high fabrication yield is a key challenge in the fabrication of solution-processed, perovskite-based light-emitting diodes (PeLEDs). In this respect, pinholes in the solution-processed perovskite layers are a major obstacle. These are usually mitigated using organic electron-conducting planarization layers. However, these organic interlayers are unstable under applied bias in air and suffer from limited charge carrier mobility. In this work, we present a high brightness p-i-n PeLED based on a novel blade-coated silver microflake (SMF) rear electrode, which allows for a low-cost nanocrystalline ZnO inorganic electron-transporting layer to be used. This novel SMF contact is crucial for achieving high performance as it prevents the electrical shorting suffered when standard thermally evaporated silver rear contacts are used. The fabricated PeLEDs exhibit an excellent maximum luminance of 98,000 cd/m2, a maximum current efficiency of 22.3 cd/A, and a high external quantum efficiency of 4.6% under 5.9 V forward bias. The SMF rear contact can be printed and scaled at low cost to large areas and applied to flexible devices.
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Affiliation(s)
- Masoud Payandeh
- Faculty of Electrical and Computer Engineering, Tarbiat Modares University, 14115-111 Tehran, Iran
| | - Vahid Ahmadi
- Faculty of Electrical and Computer Engineering, Tarbiat Modares University, 14115-111 Tehran, Iran
| | - Farzaneh Arabpour Roghabadi
- Faculty of Electrical and Computer Engineering, Tarbiat Modares University, 14115-111 Tehran, Iran
- Faculty of Chemical Engineering, Tarbiat Modares University, 14115-111 Tehran, Iran
| | - Pariya Nazari
- Institute of Microstructure Technology, Karlsruhe Institute of Technology, 76344 Eggenstein-Leopoldshafen, Germany
| | - Fatemeh Ansari
- Faculty of Electrical and Computer Engineering, Tarbiat Modares University, 14115-111 Tehran, Iran
| | - Philipp Brenner
- Light Technology Institute, Karlsruhe Institute of Technology, Engesserstrasse 13, 76131 Karlsruhe, Germany
| | - Rainer Bäuerle
- InnovationLab, Speyerer Str. 4, 69115 Heidelberg, Germany
| | - Marius Jakoby
- Institute of Microstructure Technology, Karlsruhe Institute of Technology, 76344 Eggenstein-Leopoldshafen, Germany
- Light Technology Institute, Karlsruhe Institute of Technology, Engesserstrasse 13, 76131 Karlsruhe, Germany
| | - Uli Lemmer
- Institute of Microstructure Technology, Karlsruhe Institute of Technology, 76344 Eggenstein-Leopoldshafen, Germany
- Light Technology Institute, Karlsruhe Institute of Technology, Engesserstrasse 13, 76131 Karlsruhe, Germany
| | - Ian A Howard
- Institute of Microstructure Technology, Karlsruhe Institute of Technology, 76344 Eggenstein-Leopoldshafen, Germany
- Light Technology Institute, Karlsruhe Institute of Technology, Engesserstrasse 13, 76131 Karlsruhe, Germany
| | - Bryce S Richards
- Institute of Microstructure Technology, Karlsruhe Institute of Technology, 76344 Eggenstein-Leopoldshafen, Germany
- Light Technology Institute, Karlsruhe Institute of Technology, Engesserstrasse 13, 76131 Karlsruhe, Germany
| | - Ulrich W Paetzold
- Institute of Microstructure Technology, Karlsruhe Institute of Technology, 76344 Eggenstein-Leopoldshafen, Germany
- Light Technology Institute, Karlsruhe Institute of Technology, Engesserstrasse 13, 76131 Karlsruhe, Germany
| | - Bahram Abdollahi Nejand
- Institute of Microstructure Technology, Karlsruhe Institute of Technology, 76344 Eggenstein-Leopoldshafen, Germany
- Light Technology Institute, Karlsruhe Institute of Technology, Engesserstrasse 13, 76131 Karlsruhe, Germany
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21
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Han TH, Lee JW, Choi YJ, Choi C, Tan S, Lee SJ, Zhao Y, Huang Y, Kim D, Yang Y. Surface-2D/Bulk-3D Heterophased Perovskite Nanograins for Long-Term-Stable Light-Emitting Diodes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1905674. [PMID: 31737948 DOI: 10.1002/adma.201905674] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/01/2019] [Revised: 10/04/2019] [Indexed: 05/25/2023]
Abstract
Although metal halide perovskite (MHP) light-emitting diodes (LEDs) have demonstrated great potential in terms of electroluminescence efficiency, the operational stability of MHP LEDs currently remains the biggest bottleneck toward their practical usage. Well-confined excitons/charge carriers in a dielectric/quantum well based on conventional spatial or potential confinement approaches substantially enhance radiative recombination in MHPs, but an increased surface-to-volume ratio and multiphase interfaces likely result in a high degree of surface or interface defect states, which brings about a critical environmentally/operationally vulnerable point on LED stability. Here, an effective solution is suggested to mitigate such drawbacks using strategically designed surface-2D/bulk-3D heterophased MHP nanograins for long-term-stable LEDs. The 2D surface-functionalized MHP renders significantly reduced trap density, environmental stability, and an ion-migration-immune surface in addition to a fast radiative recombination owing to its spatially and potentially confined charge carriers, simultaneously. As a result, heterophased MHP LEDs show substantial improvement in operational lifetime (T50 : >200 h) compared to conventional pure 3D or quasi-2D counterparts (T50 : < 0.2 h) as well as electroluminescence efficiency (surface-2D/bulk-3D: ≈7.70 ph per el% and pure 3D: ≈0.46 ph per el%).
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Affiliation(s)
- Tae-Hee Han
- Department of Materials Science and Engineering and California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
- Division of Materials Science and Engineering, Hanyang University, Seoul, 04763, Republic of Korea
| | - Jin-Wook Lee
- Department of Materials Science and Engineering and California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
- SKKU Advanced Institute of Nanotechnology (SAINT) and Department of Nanoengineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Yung Ji Choi
- Department of Chemistry, Yonsei University, Seoul, 03722, Republic of Korea
| | - Chungseok Choi
- Department of Materials Science and Engineering and California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Shaun Tan
- Department of Materials Science and Engineering and California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Sung-Joon Lee
- Department of Materials Science and Engineering and California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Yepin Zhao
- Department of Materials Science and Engineering and California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Yu Huang
- Department of Materials Science and Engineering and California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Dongho Kim
- Department of Chemistry, Yonsei University, Seoul, 03722, Republic of Korea
| | - Yang Yang
- Department of Materials Science and Engineering and California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
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22
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Ye F, Zhang H, Wang P, Li W, Li D, Du B, Liu D, Wang T. Methylammonium-Mediated Crystallization of Cesium-Based 2D/3D Perovskites toward High-Efficiency Light-Emitting Diodes. ACS APPLIED MATERIALS & INTERFACES 2019; 11:43452-43459. [PMID: 31659892 DOI: 10.1021/acsami.9b16376] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Two-dimensional (2D)/three-dimensional (3D) perovskites have been successfully applied in high-efficiency light-emitting diodes (LEDs) because of their large exciton binding energy (Eb) caused by the quantum and dielectric confinements. Thermal annealing and antisolvent treatments are usually executed in order to promote the crystallization and film quality of perovskites, which add complexity to the device fabrication process. Here, the cesium-based 2D/3D perovskite was prepared by introducing ammonium halide benzamidine hydrochloride (BMCl) as the additive. By further introducing an appropriate amount of MABr and PbBr2, BM2(Cs1-xMAxPbBr3)n-1PbBr4 crystals can be formed rapidly without any additional treatments, while inhibiting the formation of the unfavorable Cs4PbBr6 phase. The optimized 2D/3D perovskite-based LEDs achieved a maximum luminance of 12 367 Cd/m2, a current efficiency of 17.4 Cd/A, and an external quantum efficiency of 5.2%. Our results suggest that appropriate perovskite crystallization can be achieved at room temperature by the regulation of precursor solution, making the perovskite crystallization process easier to control with reduced processing complexity.
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23
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Kim YH, Kim JS, Lee TW. Strategies to Improve Luminescence Efficiency of Metal-Halide Perovskites and Light-Emitting Diodes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1804595. [PMID: 30556297 DOI: 10.1002/adma.201804595] [Citation(s) in RCA: 42] [Impact Index Per Article: 8.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/17/2018] [Revised: 09/17/2018] [Indexed: 05/21/2023]
Abstract
Metal-halide perovskites (MHPs) are well suited to be vivid natural color emitters due to their superior optical and electrical properties, such as narrow emission linewidths, easily and widely tunable emission wavelengths, low material cost, and high charge carrier mobility. Since the first development of MHP light-emitting diodes (PeLEDs) in 2014, many researchers have tried to understand the properties of MHP emitters and the limitations to luminescence efficiency (LE) of PeLEDs, and have devoted efforts to increase the LE of MHP emitters and PeLEDs. Within three and half years, PeLEDs have shown rapidly increased LE from external quantum efficiency ≈0.1% to ≈14.36%. Herein, the factors that limit the LE of PeLEDs are reviewed; the factors are characterized into the following groups: i) photophysical properties of MHP crystals, ii) morphological factors of MHP layers, and iii) problems caused by device architectures. Then, the strategies to overcome those luminescence-limiting factors in MHP emitters and PeLEDs are critically evaluated. Finally, research directions to further increase the LE of MHP emitters and the potential of MHPs as a core component in next-generation displays and solid-state lightings are suggested.
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Affiliation(s)
- Young-Hoon Kim
- Department of Materials Science and Engineering, Institute of Engineering Research, Research Institute of Advanced Materials, Nano Systems Institute (NSI), BK21 PLUS SNU Materials Division for Educating Creative Global Leaders, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Joo Sung Kim
- Department of Materials Science and Engineering, Institute of Engineering Research, Research Institute of Advanced Materials, Nano Systems Institute (NSI), BK21 PLUS SNU Materials Division for Educating Creative Global Leaders, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Tae-Woo Lee
- Department of Materials Science and Engineering, Institute of Engineering Research, Research Institute of Advanced Materials, Nano Systems Institute (NSI), BK21 PLUS SNU Materials Division for Educating Creative Global Leaders, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
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24
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Xu X, Wang Z, Yu J, Li L, Yan X. Phase Engineering for Highly Efficient Quasi-Two-Dimensional All-Inorganic Perovskite Light-Emitting Diodes via Adjusting the Ratio of Cs Cation. NANOSCALE RESEARCH LETTERS 2019; 14:255. [PMID: 31352526 PMCID: PMC6661056 DOI: 10.1186/s11671-019-3076-x] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/11/2019] [Accepted: 07/07/2019] [Indexed: 06/10/2023]
Abstract
Quasi-two-dimensional (2D) perovskites have received intensive attention as a new class of luminescent materials owing to large exciton binding energy and high photoluminescence efficiency. However, there usually contains a mixture of phases in these materials, and excessive low-dimensional phase perovskite is harmful for luminescence efficiency owing to the strong exciton-phonon quenching at the room temperature. Herein, a simple and effective method is proposed to suppress the growth of low-dimensional phase components in quasi-2D perovskite film via carefully adjusting the molar ratio of cesium bromide (CsBr) and phenylpropylammonium bromide (PPABr). The device based on this optimized film has achieved a peak brightness of 2921 cd m-2 and peak current efficiency of 1.38 cd A-1, far away higher than that of the pristine CsPbBr3 device. This research proves a new way for modulating the phase composition in quasi-2D perovskites to fabricate highly efficient perovskite light-emitting diodes (PeLEDs).
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Affiliation(s)
- Xiaoqiang Xu
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, People's Republic of China
- Research Institute for New Materials Technology, Chongqing University of Arts and Sciences, Chongqing, 402160, People's Republic of China
| | - Zijun Wang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, People's Republic of China
| | - Junsheng Yu
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, People's Republic of China
| | - Lu Li
- State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, People's Republic of China
| | - Xingwu Yan
- Research Institute for New Materials Technology, Chongqing University of Arts and Sciences, Chongqing, 402160, People's Republic of China.
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25
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Shin YS, Yoon YJ, Lee KT, Jeong J, Park SY, Kim GH, Kim JY. Vivid and Fully Saturated Blue Light-Emitting Diodes Based on Ligand-Modified Halide Perovskite Nanocrystals. ACS APPLIED MATERIALS & INTERFACES 2019; 11:23401-23409. [PMID: 31252491 DOI: 10.1021/acsami.9b04329] [Citation(s) in RCA: 29] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
CsPbX3 (X = I, Br, Cl) perovskite nanocrystals (NCs) have recently emerged as emitting materials for optoelectronic and display applications owing to their easily tunable emissions, high photoluminescence quantum yield (PLQY), and vivid color purity (full width at half maximum of approximately 20 nm). However, the lagging quantum yields of blue-emitting perovskite NCs have resulted in low efficiency compared to green or red perovskite light-emitting diodes (PeLEDs); moreover, the long insulating ligands (such as oleylamine and oleic acid) inhibit charge carrier injection. In this study, we demonstrated a facile ligand-mediated post-treatment (LMPT) method for high-quality perovskite NCs with changing optical properties to allow fine-tuning of the target emission wavelength. This method involves the use of a mixed halide ion-pair ligand, di-dodecyl dimethyl ammonium bromide, and chloride, which can induce a reconstruction through a self-anion exchange. Using the LMPT method, the PLQY of the surface-passivated blue-emitting NCs was dramatically enhanced to over 70% within the 485 nm blue emission region and 50% within the 467 nm deep-blue emission region. Through this treatment, we achieved highly efficient blue-PeLED maximum external quantum efficiencies of 0.44 and 0.86% within the 470 and 480 ± 2 nm electroluminescence emission regions, respectively.
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Affiliation(s)
- Yun Seop Shin
- Perovtronics Research Center, Department of Energy Engineering , Ulsan National Institute of Science and Technology (UNIST) , Ulsan 44919 , South Korea
| | - Yung Jin Yoon
- Perovtronics Research Center, Department of Energy Engineering , Ulsan National Institute of Science and Technology (UNIST) , Ulsan 44919 , South Korea
| | - Kang Taek Lee
- Perovtronics Research Center, Department of Energy Engineering , Ulsan National Institute of Science and Technology (UNIST) , Ulsan 44919 , South Korea
| | - Jaeki Jeong
- Perovtronics Research Center, Department of Energy Engineering , Ulsan National Institute of Science and Technology (UNIST) , Ulsan 44919 , South Korea
| | - Song Yi Park
- Perovtronics Research Center, Department of Energy Engineering , Ulsan National Institute of Science and Technology (UNIST) , Ulsan 44919 , South Korea
| | - Gi-Hwan Kim
- Photonic Energy Research Center , Korea Photonics Technology Institute (KOPTI) , Gwangju 500-779 , Republic of Korea
| | - Jin Young Kim
- Perovtronics Research Center, Department of Energy Engineering , Ulsan National Institute of Science and Technology (UNIST) , Ulsan 44919 , South Korea
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26
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Quan LN, Rand BP, Friend RH, Mhaisalkar SG, Lee TW, Sargent EH. Perovskites for Next-Generation Optical Sources. Chem Rev 2019; 119:7444-7477. [PMID: 31021609 DOI: 10.1021/acs.chemrev.9b00107] [Citation(s) in RCA: 301] [Impact Index Per Article: 60.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Next-generation displays and lighting technologies require efficient optical sources that combine brightness, color purity, stability, substrate flexibility. Metal halide perovskites have potential use in a wide range of applications, for they possess excellent charge transport, bandgap tunability and, in the most promising recent optical source materials, intense and efficient luminescence. This review links metal halide perovskites' performance as efficient light emitters with their underlying materials electronic and photophysical attributes.
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Affiliation(s)
- Li Na Quan
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada
| | - Barry P Rand
- Department of Electrical Engineering and Andlinger Center for Energy and the Environment, Princeton University, Princeton, New Jersey 08544, United States
| | - Richard H Friend
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - Subodh Gautam Mhaisalkar
- Energy Research Institute, Nanyang Technological University, Research Techno Plaza, X-Frontier Block, Level 5, 50 Nanyang Drive, 637553 Singapore, Singapore
| | - Tae-Woo Lee
- Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea
| | - Edward H Sargent
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada
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27
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Hassan Y, Ashton OJ, Park JH, Li G, Sakai N, Wenger B, Haghighirad AA, Noel NK, Song MH, Lee BR, Friend RH, Snaith HJ. Facile Synthesis of Stable and Highly Luminescent Methylammonium Lead Halide Nanocrystals for Efficient Light Emitting Devices. J Am Chem Soc 2019; 141:1269-1279. [PMID: 30605603 DOI: 10.1021/jacs.8b09706] [Citation(s) in RCA: 55] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/11/2023]
Abstract
Metal halide perovskites are promising candidates for use in light emitting diodes (LEDs), due to their potential for color tunable and high luminescence efficiency. While recent advances in perovskite-based light emitting diodes have resulted in external quantum efficiencies exceeding 12.4% for the green emitters, and infrared emitters based on 3 D/2D mixed dimensional perovskites have exceeded 20%, the external quantum efficiencies of the red and blue emitters still lag behind. A critical issue to date is creating highly emissive and stable perovskite emitters with the desirable emission band gap to achieve full-color displays and white LEDs. Herein, we report the preparation and characterization of a highly luminescent and stable suspension of cubic-shaped methylammonium lead triiodide (CH3NH3PbI3) perovskite nanocrystals, where we synthesize the nanocrystals via a ligand-assisted reprecipitation technique, using an acetonitrile/methylamine compound solvent system to solvate the ions and toluene as the antisolvent to induce crystallization. Through tuning the ratio of the ligands, the ligand to toluene ratio, and the temperature of the toluene, we obtain a solution of CH3NH3PbI3 nanocrystals with a photoluminescence quantum yield exceeding 93% and tunable emission between 660 and 705 nm. We also achieved red emission at 635 nm by blending the nanocrystals with bromide salt and obtained perovskite-based light emitting diodes with maximum electroluminescent external quantum efficiency of 2.75%.
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Affiliation(s)
- Yasser Hassan
- Clarendon Laboratory, Department of Physics , University of Oxford , Parks Road , Oxford OX1 3PU , United Kingdom
| | - Olivia J Ashton
- Clarendon Laboratory, Department of Physics , University of Oxford , Parks Road , Oxford OX1 3PU , United Kingdom
| | - Jong Hyun Park
- School of Materials Science Engineering and KIST-UNIST Ulsan Center for Convergent Materials/Low Dimensional Carbon Center/Perovtronics Research Center , Ulsan National Institute of Science and Technology (UNIST) , UNIST-gil 50 , Ulsan 44919 , Republic of Korea
| | - Guangru Li
- Cavendish Laboratory , University of Cambridge , J J Thomson Avenue , Cambridge CB3 0HE , United Kingdom
| | - Nobuya Sakai
- Clarendon Laboratory, Department of Physics , University of Oxford , Parks Road , Oxford OX1 3PU , United Kingdom
| | - Bernard Wenger
- Clarendon Laboratory, Department of Physics , University of Oxford , Parks Road , Oxford OX1 3PU , United Kingdom
| | - Amir-Abbas Haghighirad
- Clarendon Laboratory, Department of Physics , University of Oxford , Parks Road , Oxford OX1 3PU , United Kingdom.,Institute for Solid State Physics , Karlsruhe Institute of Technology , 76021 Karlsruhe , Germany
| | - Nakita K Noel
- Clarendon Laboratory, Department of Physics , University of Oxford , Parks Road , Oxford OX1 3PU , United Kingdom
| | - Myoung Hoon Song
- School of Materials Science Engineering and KIST-UNIST Ulsan Center for Convergent Materials/Low Dimensional Carbon Center/Perovtronics Research Center , Ulsan National Institute of Science and Technology (UNIST) , UNIST-gil 50 , Ulsan 44919 , Republic of Korea
| | - Bo Ram Lee
- Cavendish Laboratory , University of Cambridge , J J Thomson Avenue , Cambridge CB3 0HE , United Kingdom.,Department of Physics , Pukyong National University , 45 Yongso-ro , Nam-Gu , Busan 48513 , Republic of Korea
| | - Richard H Friend
- Cavendish Laboratory , University of Cambridge , J J Thomson Avenue , Cambridge CB3 0HE , United Kingdom
| | - Henry J Snaith
- Clarendon Laboratory, Department of Physics , University of Oxford , Parks Road , Oxford OX1 3PU , United Kingdom
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Cai W, Chen Z, Chen D, Su S, Xu Q, Yip HL, Cao Y. High-performance and stable CsPbBr3 light-emitting diodes based on polymer additive treatment. RSC Adv 2019; 9:27684-27691. [PMID: 35529194 PMCID: PMC9070759 DOI: 10.1039/c9ra05270d] [Citation(s) in RCA: 20] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/10/2019] [Accepted: 08/27/2019] [Indexed: 12/02/2022] Open
Abstract
Because of their high efficiency and sharp emission, perovskite light-emitting diodes are a promising candidate for next-generation lighting techniques. However, the relatively poor stability of perovskite light-emitting diodes lowers their utility. Therefore, a highly stable perovskite light-emitting diode has to be developed to meet the commercial demand. Herein, we report a highly stable CsPbBr3 light-emitting diode via simple polymer treatment. The addition of 2-methyl-2-oxazoline in perovskite film assists the formation of CsPbBr3 nanocrystals, improving the quality and photoluminescence property of perovskite film. Based on such CsPbBr3 nanocrystals and polymer hybrid film, our device presents a high external quantum efficiency and luminance of around 3.0% and 16 648 cd m−2, respectively. Moreover, an excellent device half-lifetime of more than 2.4 hours has been achieved, under continuous operation at a relatively high initial luminance of 1000 cd m−2, representing one of the most stable PeLEDs operated at such high initial luminance. The 2-methyl-2-oxazoline additive induced the formation of high-quality CsPbBr3 nanocrystals and a stable PeLED with a half-lifetime of 2.4 hours at high initial luminance of 1000 cd m−2 was demonstrated, representing one of the most stable PeLEDs.![]()
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Affiliation(s)
- Wanqing Cai
- State Key Laboratory of Luminescent Materials and Devices
- Institute of Polymer Optoelectronic Materials and Devices
- School of Materials Science and Engineering
- South China University of Technology
- Guangzhou
| | - Ziming Chen
- State Key Laboratory of Luminescent Materials and Devices
- Institute of Polymer Optoelectronic Materials and Devices
- School of Materials Science and Engineering
- South China University of Technology
- Guangzhou
| | - Dongcheng Chen
- State Key Laboratory of Luminescent Materials and Devices
- Institute of Polymer Optoelectronic Materials and Devices
- School of Materials Science and Engineering
- South China University of Technology
- Guangzhou
| | - Shijian Su
- State Key Laboratory of Luminescent Materials and Devices
- Institute of Polymer Optoelectronic Materials and Devices
- School of Materials Science and Engineering
- South China University of Technology
- Guangzhou
| | - Qinghua Xu
- Department of Chemistry
- National University of Singapore
- 117543 Singapore
| | - Hin-Lap Yip
- State Key Laboratory of Luminescent Materials and Devices
- Institute of Polymer Optoelectronic Materials and Devices
- School of Materials Science and Engineering
- South China University of Technology
- Guangzhou
| | - Yong Cao
- State Key Laboratory of Luminescent Materials and Devices
- Institute of Polymer Optoelectronic Materials and Devices
- School of Materials Science and Engineering
- South China University of Technology
- Guangzhou
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29
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Qiu W, Xiao Z, Roh K, Noel NK, Shapiro A, Heremans P, Rand BP. Mixed Lead-Tin Halide Perovskites for Efficient and Wavelength-Tunable Near-Infrared Light-Emitting Diodes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1806105. [PMID: 30484911 DOI: 10.1002/adma.201806105] [Citation(s) in RCA: 25] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/19/2018] [Revised: 11/04/2018] [Indexed: 05/25/2023]
Abstract
Near-infrared (NIR) light-emitting diodes (LEDs), with emission wavelengths between 800 and 950 nm, are useful for various applications, e.g., night-vision devices, optical communication, and medical treatments. Yet, devices using thin film materials like organic semiconductors and lead based colloidal quantum dots face certain fundamental challenges that limit the improvement of external quantum efficiency (EQE), making the search of alternative NIR emitters important for the community. In this work, efficient NIR LEDs with tunable emission from 850 to 950 nm, using lead-tin (Pb-Sn) halide perovskite as emitters are demonstrated. The best performing device exhibits an EQE of 5.0% with a peak emission wavelength of 917 nm, a turn-on voltage of 1.65 V, and a radiance of 2.7 W Sr-1 m-2 when driven at 4.5 V. The emission spectra of mixed Pb-Sn perovskites are tuned either by changing the Pb:Sn ratio or by incorporating bromide, and notably exhibit no phase separation during device operation. The work demonstrates that mixed Pb-Sn perovskites are promising next generation NIR emitters.
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Affiliation(s)
- Weiming Qiu
- Department of Electrical Engineering, Princeton University, Princeton, NJ, 08544, USA
- Imec, Kapeldreef 75, Heverlee, 3001, Belgium
- Department of Electrical Engineering, ESAT, KU Leuven, Heverlee, 3001, Belgium
| | - Zhengguo Xiao
- Department of Electrical Engineering, Princeton University, Princeton, NJ, 08544, USA
- Department of Physics, Key Laboratory of Strongly-coupled Quantum Matter Physics, University of Science and Technology, Hefei, Anhui, 230026, China
| | - Kwangdong Roh
- Department of Electrical Engineering, Princeton University, Princeton, NJ, 08544, USA
| | - Nakita K Noel
- Department of Electrical Engineering, Princeton University, Princeton, NJ, 08544, USA
- Princeton Research Institute for the Science and Technology of Materials, Princeton University, Princeton, NJ, 08544, USA
| | - Andrew Shapiro
- Department of Electrical Engineering, Princeton University, Princeton, NJ, 08544, USA
| | - Paul Heremans
- Imec, Kapeldreef 75, Heverlee, 3001, Belgium
- Department of Electrical Engineering, ESAT, KU Leuven, Heverlee, 3001, Belgium
| | - Barry P Rand
- Department of Electrical Engineering, Princeton University, Princeton, NJ, 08544, USA
- Andlinger Center for Energy and the Environment, Princeton University, Princeton, NJ, 08544, USA
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30
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Huo J, Zou W, Zhang Y, Chen W, Hu X, Deng Q, Chen D. Retracted Article: Facile preparation of bithiazole-based material for inkjet printed light-emitting electrochemical cell. RSC Adv 2019; 9:6163-6168. [PMID: 35517266 PMCID: PMC9060932 DOI: 10.1039/c9ra00093c] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/05/2019] [Revised: 06/18/2019] [Accepted: 02/05/2019] [Indexed: 12/16/2022] Open
Abstract
Light-emitting electrochemical cell of bithiazole-based material was fabricated by solution processing rendered high external quantum efficiency over 12.8% and luminance of 1.8 104 cd m−2. Light-emitting electrochemical cell of bithiazole-based material was fabricated by solution processing rendered high external quantum efficiency over 12.8% and luminance of 1.8 104 cd m−2.![]()
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Affiliation(s)
- Jingpei Huo
- Electrochemical Corrosion Institute
- College of Materials Science and Energy Engineering
- Foshan University
- Foshan
- People’s Republic of China
| | - Wanying Zou
- Electrochemical Corrosion Institute
- College of Materials Science and Energy Engineering
- Foshan University
- Foshan
- People’s Republic of China
| | - Yubang Zhang
- Electrochemical Corrosion Institute
- College of Materials Science and Energy Engineering
- Foshan University
- Foshan
- People’s Republic of China
| | - Weilan Chen
- Electrochemical Corrosion Institute
- College of Materials Science and Energy Engineering
- Foshan University
- Foshan
- People’s Republic of China
| | - Xiaohong Hu
- Electrochemical Corrosion Institute
- College of Materials Science and Energy Engineering
- Foshan University
- Foshan
- People’s Republic of China
| | - Qianjun Deng
- Electrochemical Corrosion Institute
- College of Materials Science and Energy Engineering
- Foshan University
- Foshan
- People’s Republic of China
| | - Dongchu Chen
- Electrochemical Corrosion Institute
- College of Materials Science and Energy Engineering
- Foshan University
- Foshan
- People’s Republic of China
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31
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Vovk IA, Tepliakov NV, Baimuratov AS, Leonov MY, Baranov AV, Fedorov AV, Rukhlenko ID. Excitonic phenomena in perovskite quantum-dot supercrystals. Phys Chem Chem Phys 2018; 20:25023-25030. [PMID: 30246191 DOI: 10.1039/c8cp04724c] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/20/2022]
Abstract
Quantum confinement and collective excitations in perovskite quantum-dot (QD) supercrystals offer multiple benefits to the light emitting and solar energy harvesting devices of modern photovoltaics. Recent advances in the fabrication technology of low dimensional perovskites has made the production of such supercrystals a reality and created a high demand for the modelling of excitonic phenomena inside them. Here we present a rigorous theory of Frenkel excitons in lead halide perovskite QD supercrystals with a square Bravais lattice. The theory shows that such supercrystals support three bright exciton modes whose dispersion and polarization properties are controlled by the symmetry of the perovskite lattice and the orientations of QDs. The effective masses of excitons are found to scale with the ratio of the superlattice period and the number of QDs along the supercrystal edge, allowing one to fine-tune the electro-optical response of the supercrystals as desired for applications. We also calculate the conductivity of perovskite QD supercrystals and analyze how it is affected by the optical generation of the three types of excitons. This paper provides a solid theoretical basis for the modelling of two- and three-dimensional supercrystals made of perovskite QDs and the engineering of photovoltaic devices with superior optoelectronic properties.
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Affiliation(s)
- Ilia A Vovk
- Information Optical Technologies Centre, ITMO University, Saint Petersburg 197101, Russia.
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32
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Matsushima T, Qin C, Goushi K, Bencheikh F, Komino T, Leyden M, Sandanayaka ASD, Adachi C. Enhanced Electroluminescence from Organic Light-Emitting Diodes with an Organic-Inorganic Perovskite Host Layer. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1802662. [PMID: 30091178 DOI: 10.1002/adma.201802662] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/26/2018] [Revised: 07/16/2018] [Indexed: 06/08/2023]
Abstract
The development of host materials with high performance is essential for fabrication of efficient and stable organic light-emitting diodes (OLEDs). Although host materials used in OLEDs are typically organics, in this study, it is shown that the organic-inorganic perovskite CH3 NH3 PbCl3 (MAPbCl3 ) can be used as a host layer for OLEDs. Vacuum-evaporated MAPbCl3 films have a wide band gap of about 3 eV and very high and relatively balanced hole and electron mobilities, which are suitable for the host material. Photoluminescence and electroluminescence take place through energy transfer from MAPbCl3 to an organic emitter in films. Incorporation of an MAPbCl3 host layer into OLEDs leads to a reduction of driving voltage and enhancement of external quantum efficiency as compared to devices with a conventional organic host layer. Additionally, OLEDs with an MAPbCl3 host layer demonstrate very good operational stability under continuous current operation. These results can be extensively applied to organic- and perovskite-based optoelectronics.
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Affiliation(s)
- Toshinori Matsushima
- Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, 744 Motooka, Nishi, Fukuoka, 819-0395, Japan
- Japan Science and Technology Agency (JST), ERATO, Adachi Molecular Exciton Engineering Project, 744 Motooka, Nishi, Fukuoka, 819-0395, Japan
- International Institute for Carbon Neutral Energy Research (WPI-I2CNER), Kyushu University, 744 Motooka, Nishi, Fukuoka, 819-0395, Japan
| | - Chuanjiang Qin
- Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, 744 Motooka, Nishi, Fukuoka, 819-0395, Japan
- Japan Science and Technology Agency (JST), ERATO, Adachi Molecular Exciton Engineering Project, 744 Motooka, Nishi, Fukuoka, 819-0395, Japan
| | - Kenichi Goushi
- Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, 744 Motooka, Nishi, Fukuoka, 819-0395, Japan
- Japan Science and Technology Agency (JST), ERATO, Adachi Molecular Exciton Engineering Project, 744 Motooka, Nishi, Fukuoka, 819-0395, Japan
- International Institute for Carbon Neutral Energy Research (WPI-I2CNER), Kyushu University, 744 Motooka, Nishi, Fukuoka, 819-0395, Japan
| | - Fatima Bencheikh
- Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, 744 Motooka, Nishi, Fukuoka, 819-0395, Japan
- Japan Science and Technology Agency (JST), ERATO, Adachi Molecular Exciton Engineering Project, 744 Motooka, Nishi, Fukuoka, 819-0395, Japan
| | - Takeshi Komino
- Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, 744 Motooka, Nishi, Fukuoka, 819-0395, Japan
- Japan Science and Technology Agency (JST), ERATO, Adachi Molecular Exciton Engineering Project, 744 Motooka, Nishi, Fukuoka, 819-0395, Japan
- Education Center for Global Leaders in Molecular System for Devices, Kyushu University, 744 Motooka, Nishi, Fukuoka, 819-0395, Japan
| | - Matthew Leyden
- Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, 744 Motooka, Nishi, Fukuoka, 819-0395, Japan
- Japan Science and Technology Agency (JST), ERATO, Adachi Molecular Exciton Engineering Project, 744 Motooka, Nishi, Fukuoka, 819-0395, Japan
| | - Atula S D Sandanayaka
- Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, 744 Motooka, Nishi, Fukuoka, 819-0395, Japan
- Japan Science and Technology Agency (JST), ERATO, Adachi Molecular Exciton Engineering Project, 744 Motooka, Nishi, Fukuoka, 819-0395, Japan
| | - Chihaya Adachi
- Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, 744 Motooka, Nishi, Fukuoka, 819-0395, Japan
- Japan Science and Technology Agency (JST), ERATO, Adachi Molecular Exciton Engineering Project, 744 Motooka, Nishi, Fukuoka, 819-0395, Japan
- International Institute for Carbon Neutral Energy Research (WPI-I2CNER), Kyushu University, 744 Motooka, Nishi, Fukuoka, 819-0395, Japan
- Education Center for Global Leaders in Molecular System for Devices, Kyushu University, 744 Motooka, Nishi, Fukuoka, 819-0395, Japan
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33
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Han D, Imran M, Zhang M, Chang S, Wu XG, Zhang X, Tang J, Wang M, Ali S, Li X, Yu G, Han J, Wang L, Zou B, Zhong H. Efficient Light-Emitting Diodes Based on in Situ Fabricated FAPbBr 3 Nanocrystals: The Enhancing Role of the Ligand-Assisted Reprecipitation Process. ACS NANO 2018; 12:8808-8816. [PMID: 30080977 DOI: 10.1021/acsnano.8b05172] [Citation(s) in RCA: 87] [Impact Index Per Article: 14.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
In this paper, we reported the in situ fabrication of highly luminescent formamidinium lead bromide (FAPbBr3) nanocrystal thin films by dropping toluene as an anti-solvent during the spin-coating with a perovskite precursor solution using 3,3-diphenylpropylamine bromide (DPPA-Br) as a ligand. The resulting films are uniform and composed of 5-20 nm FAPbBr3 perovskite nanocrystals. By monitoring the solvent mixing of anti-solvent and precursor solution on the substrates, we illustrated the difference between the ligand-assisted reprecipitation (LARP) process and the nanocrystal-pinning (NCP) process. This understanding provides a guideline for film optimization, and the optimized films obtained through the in situ LARP process exhibit strong photoluminescence emission at 528 nm, with quantum yields up to 78% and an average photoluminescence lifetime of 12.7 ns. In addition, an exciton binding energy of 57.5 meV was derived from the temperature-dependent photoluminescence measurement. More importantly, we achieved highly efficient pure green perovskite based light-emitting diode (PeLEDs) devices with an average external quantum efficiency (EQE) of 7.3% (maximum EQE is 16.3%) and an average current efficiency (CE) of 29.5 cd A-1 (maximum CE is 66.3 cd A-1) by adapting a conventional device structure of ITO/PEDOT:PSS/TFB/perovskite film/TPBi/LiF/Al. It is expected that the in situ LARP process provides an effective methodology for the improvement of the performance of PeLEDs.
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Affiliation(s)
| | - Muhammad Imran
- NUST Institute of Civil Engineering (NICE) , National University of Sciences and Technology (NUST) , NUST Campus, H-12 , Islamabad 44000 , Pakistan
| | | | | | | | | | | | - Mingshan Wang
- Wuhan National High Magnetic Field Center and School of Physics , Huazhong University of Science and Technology , Wuhan 430074 , China
| | | | - Xinguo Li
- Boe Technology Group Company Ltd. , No. 9 Dize Road, BDA , Beijing 100176 , China
| | - Gang Yu
- Boe Technology Group Company Ltd. , No. 9 Dize Road, BDA , Beijing 100176 , China
| | - Junbo Han
- Wuhan National High Magnetic Field Center and School of Physics , Huazhong University of Science and Technology , Wuhan 430074 , China
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34
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Chemical regulation of metal halide perovskite nanomaterials for efficient light-emitting diodes. Sci China Chem 2018. [DOI: 10.1007/s11426-018-9325-7] [Citation(s) in RCA: 22] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
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35
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Zhang X, Wang W, Xu B, Liu H, Shi H, Dai H, Zhang X, Chen S, Wang K, Sun XW. Less-Lead Control toward Highly Efficient Formamidinium-Based Perovskite Light-Emitting Diodes. ACS APPLIED MATERIALS & INTERFACES 2018; 10:24242-24248. [PMID: 29956540 DOI: 10.1021/acsami.8b03590] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
A formamidinium (FA)-based perovskite is an ideal option for the potential efficient light-emitting diode (LED) in view of its high tolerance factor closer to 1. In this work, FA cation-based perovskite nanocrystals FA0.8Cs0.2Pb xBr3 ( x = 1.0, 0.8, 0.7, and 0.6) are fabricated with stoichiometric modification. The adoption of less-lead precursor is confirmed to be a feasible and effective approach in inhibiting nonradiative recombination by diminishing the presence of uncoordinated metallic Pb atoms. Note that the subsequent devices require the optimized lead ratio for an optimum behavior, a clear influence of Pb ratio on a perovskite LED has been established. No surprisingly, the less-lead perovskites exert positive roles on the perovskite LED performance, not only in terms of efficiency but also in stability. With an optimized composition FA0.8Cs0.2Pb0.7Br3, the perovskite LED displays the prominent performance with a current efficiency of 28.61 cd A-1, about 11-fold improvement than the previous best record of pure FA-based perovskite. Additionally, the perovskite device degradation can be mitigated under operating conditions by properly altering precursor stoichiometry, which can be attributed to the hydrogen reaction under moisture-induced ambient. The stoichiometric optimization of the metal Pb in the perovskite is an important strategy on the road to the further development of perovskite LEDs.
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Affiliation(s)
- Xiaoli Zhang
- Department of Electrical & Electronic Engineering , Southern University of Science and Technology , 518055 Shenzhen , China
| | - Weigao Wang
- Department of Electrical & Electronic Engineering , Southern University of Science and Technology , 518055 Shenzhen , China
| | - Bing Xu
- Department of Electrical & Electronic Engineering , Southern University of Science and Technology , 518055 Shenzhen , China
| | - Haochen Liu
- Department of Electrical & Electronic Engineering , Southern University of Science and Technology , 518055 Shenzhen , China
| | - Huafeng Shi
- Department of Electrical & Electronic Engineering , Southern University of Science and Technology , 518055 Shenzhen , China
| | - Haitao Dai
- School of Science , Tianjin University , 300072 Tianjin , China
| | - Xinhai Zhang
- Department of Electrical & Electronic Engineering , Southern University of Science and Technology , 518055 Shenzhen , China
| | - Shuming Chen
- Department of Electrical & Electronic Engineering , Southern University of Science and Technology , 518055 Shenzhen , China
| | - Kai Wang
- Department of Electrical & Electronic Engineering , Southern University of Science and Technology , 518055 Shenzhen , China
| | - Xiao Wei Sun
- Department of Electrical & Electronic Engineering , Southern University of Science and Technology , 518055 Shenzhen , China
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36
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Pfingsten O, Klein J, Protesescu L, Bodnarchuk MI, Kovalenko MV, Bacher G. Phonon Interaction and Phase Transition in Single Formamidinium Lead Bromide Quantum Dots. NANO LETTERS 2018; 18:4440-4446. [PMID: 29916252 DOI: 10.1021/acs.nanolett.8b01523] [Citation(s) in RCA: 31] [Impact Index Per Article: 5.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/20/2023]
Abstract
Formamidinium lead bromide (FAPbBr3) quantum dots (QDs) are promising materials for light emitting applications in the visible spectral region because of their high photoluminescence (PL) quantum yield (QY) and the enhanced chemical stability as compared to, for instance, methylammonium based analogues. Toward practical harnessing of their compelling optical characteristics, the exciton recombination process, and in particular the exciton-phonon interaction and the impact of crystal phase transition, has to be understood in detail. This is addressed in this contribution by PL studies on single colloidal FAPbBr3 QDs. Polarization-resolved PL measurements reveal a fine structure splitting of excitonic transitions due to the Rashba effect. Distinct phonon replica have been observed within energetic distances of 4.3 ± 0.5, 8.6 ± 0.9, and 13.2 ± 1.1 meV from the zero phonon line, which we attribute to vibrational modes of the lead bromide lattice. Additional vibrational modes of 18.6 ± 0.3 and 38.8 ± 1.1 meV are found and related to liberation modes of the formamidinium (FA) cation. Temperature-dependent PL spectra reveal a line broadening of the emission caused by exciton phonon interaction as well an unusual energy shift which is attributed to a crystal phase transition within the single QD.
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Affiliation(s)
- Oliver Pfingsten
- Werkstoffe der Elektrotechnik and CENIDE , Universität Duisburg-Essen , Bismarckstraße 81 , 47057 Duisburg , Germany
| | - Julian Klein
- Werkstoffe der Elektrotechnik and CENIDE , Universität Duisburg-Essen , Bismarckstraße 81 , 47057 Duisburg , Germany
| | - Loredana Protesescu
- Laboratory for Thin Films and Photovoltaics , Empa - Swiss Federal Laboratories for Materials Science and Technology , Überlandstrasse 129 , CH-8600 Dübendorf , Switzerland
- Institute of Inorganic Chemistry, Department of Chemistry and Applied Biosciences , ETH Zürich , Vladimir Prelog Weg 1 , CH-8093 Zürich , Switzerland
| | - Maryna I Bodnarchuk
- Laboratory for Thin Films and Photovoltaics , Empa - Swiss Federal Laboratories for Materials Science and Technology , Überlandstrasse 129 , CH-8600 Dübendorf , Switzerland
| | - Maksym V Kovalenko
- Laboratory for Thin Films and Photovoltaics , Empa - Swiss Federal Laboratories for Materials Science and Technology , Überlandstrasse 129 , CH-8600 Dübendorf , Switzerland
- Institute of Inorganic Chemistry, Department of Chemistry and Applied Biosciences , ETH Zürich , Vladimir Prelog Weg 1 , CH-8093 Zürich , Switzerland
| | - Gerd Bacher
- Werkstoffe der Elektrotechnik and CENIDE , Universität Duisburg-Essen , Bismarckstraße 81 , 47057 Duisburg , Germany
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