1
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Kim J, Roh J, Park M, Lee C. Recent Advances and Challenges of Colloidal Quantum Dot Light-Emitting Diodes for Display Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2212220. [PMID: 36853911 DOI: 10.1002/adma.202212220] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/28/2022] [Revised: 02/21/2023] [Indexed: 06/18/2023]
Abstract
Colloidal quantum dots (QDs) exhibit tremendous potential in display technologies owing to their unique optical properties, such as size-tunable emission wavelength, narrow spectral linewidth, and near-unity photoluminescence quantum yield. Significant efforts in academia and industry have achieved dramatic improvements in the performance of quantum dot light-emitting diodes (QLEDs) over the past decade, primarily owing to the development of high-quality QDs and optimized device architectures. Moreover, sophisticated patterning processes have also been developed for QDs, which is an essential technique for their commercialization. As a result of these achievements, some QD-based display technologies, such as QD enhancement films and QD-organic light-emitting diodes, have been successfully commercialized, confirming the superiority of QDs in display technologies. However, despite these developments, the commercialization of QLEDs is yet to reach a threshold, requiring a leap forward in addressing challenges and related problems. Thus, representative research trends, progress, and challenges of QLEDs in the categories of material synthesis, device engineering, and fabrication method to specify the current status and development direction are reviewed. Furthermore, brief insights into the factors to be considered when conducting research on single-device QLEDs are provided to realize active matrix displays. This review guides the way toward the commercialization of QLEDs.
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Affiliation(s)
- Jaehoon Kim
- Department of Energy and Mineral Resources Engineering, Dong-A University, Busan, 49315, Republic of Korea
| | - Jeongkyun Roh
- Department of Electrical Engineering, Pusan National University, Busan, 46241, Republic of Korea
| | - Myoungjin Park
- Display Research Center, Samsung Display Co., Yongin-si, Gyeonggi-do, 17113, Republic of Korea
| | - Changhee Lee
- Display Research Center, Samsung Display Co., Yongin-si, Gyeonggi-do, 17113, Republic of Korea
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2
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Chang S, Koo JH, Yoo J, Kim MS, Choi MK, Kim DH, Song YM. Flexible and Stretchable Light-Emitting Diodes and Photodetectors for Human-Centric Optoelectronics. Chem Rev 2024; 124:768-859. [PMID: 38241488 DOI: 10.1021/acs.chemrev.3c00548] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/21/2024]
Abstract
Optoelectronic devices with unconventional form factors, such as flexible and stretchable light-emitting or photoresponsive devices, are core elements for the next-generation human-centric optoelectronics. For instance, these deformable devices can be utilized as closely fitted wearable sensors to acquire precise biosignals that are subsequently uploaded to the cloud for immediate examination and diagnosis, and also can be used for vision systems for human-interactive robotics. Their inception was propelled by breakthroughs in novel optoelectronic material technologies and device blueprinting methodologies, endowing flexibility and mechanical resilience to conventional rigid optoelectronic devices. This paper reviews the advancements in such soft optoelectronic device technologies, honing in on various materials, manufacturing techniques, and device design strategies. We will first highlight the general approaches for flexible and stretchable device fabrication, including the appropriate material selection for the substrate, electrodes, and insulation layers. We will then focus on the materials for flexible and stretchable light-emitting diodes, their device integration strategies, and representative application examples. Next, we will move on to the materials for flexible and stretchable photodetectors, highlighting the state-of-the-art materials and device fabrication methods, followed by their representative application examples. At the end, a brief summary will be given, and the potential challenges for further development of functional devices will be discussed as a conclusion.
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Affiliation(s)
- Sehui Chang
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Ja Hoon Koo
- Department of Semiconductor Systems Engineering, Sejong University, Seoul 05006, Republic of Korea
- Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea
| | - Jisu Yoo
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Min Seok Kim
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
| | - Moon Kee Choi
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), UNIST, Ulsan 44919, Republic of Korea
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
| | - Dae-Hyeong Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University (SNU), Seoul 08826, Republic of Korea
- Department of Materials Science and Engineering, SNU, Seoul 08826, Republic of Korea
- Interdisciplinary Program for Bioengineering, SNU, Seoul 08826, Republic of Korea
| | - Young Min Song
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Artificial Intelligence (AI) Graduate School, GIST, Gwangju 61005, Republic of Korea
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Torun I, Huang C, Kalay M, Shim M, Onses MS. pH Tunable Patterning of Quantum Dots. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2305237. [PMID: 37658505 DOI: 10.1002/smll.202305237] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/04/2023] [Revised: 08/17/2023] [Indexed: 09/03/2023]
Abstract
Patterning of quantum dots (QDs) is essential for many, especially high-tech, applications. Here, pH tunable assembly of QDs over functional patterns prepared by electrohydrodynamic jet printing of poly(2-vinylpyridine) is presented. The selective adsorption of QDs from water dispersions is mediated by the electrostatic interaction between the ligand composed of 3-mercaptopropionic acid and patterned poly(2-vinylpyridine). The pH of the dispersion provides tunability at two levels. First, the adsorption density of QDs and fluorescence from the patterns can be modulated for pH > ≈4. Second, patterned features show unique type of disintegration resulting in randomly positioned features within areas defined by the printing for pH ≤ ≈4. The first capability is useful for deterministic patterning of QDs, whereas the second one enables hierarchically structured encoding of information by generating stochastic features of QDs within areas defined by the printing. This second capability is exploited for generating addressable security labels based on unclonable features. Through image analysis and feature matching algorithms, it is demonstrated that such patterns are unclonable in nature and provide a suitable platform for anti-counterfeiting applications. Collectively, the presented approach not only enables effective patterning of QDs, but also establishes key guidelines for addressable assembly of colloidal nanomaterials.
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Affiliation(s)
- Ilker Torun
- Department of Materials Science and Engineering, Nanotechnology Research Center (ERNAM), Erciyes University, Kayseri, 38039, Turkey
- Department of Materials Science and Engineering, University of Illinois Urbana-Champaign, Urbana, IL, 61801, USA
| | - Conan Huang
- Department of Materials Science and Engineering, University of Illinois Urbana-Champaign, Urbana, IL, 61801, USA
| | - Mustafa Kalay
- Nanotechnology Research Center (ERNAM), Erciyes University, Kayseri, 38039, Turkey
- Department of Electricity and Energy, Kayseri University, Kayseri, 38039, Turkey
| | - Moonsub Shim
- Department of Materials Science and Engineering, University of Illinois Urbana-Champaign, Urbana, IL, 61801, USA
| | - M Serdar Onses
- Department of Materials Science and Engineering, Nanotechnology Research Center (ERNAM), Erciyes University, Kayseri, 38039, Turkey
- UNAM-Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
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Lee GH, Kim K, Kim Y, Yang J, Choi MK. Recent Advances in Patterning Strategies for Full-Color Perovskite Light-Emitting Diodes. NANO-MICRO LETTERS 2023; 16:45. [PMID: 38060071 DOI: 10.1007/s40820-023-01254-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Accepted: 10/19/2023] [Indexed: 12/08/2023]
Abstract
Metal halide perovskites have emerged as promising light-emitting materials for next-generation displays owing to their remarkable material characteristics including broad color tunability, pure color emission with remarkably narrow bandwidths, high quantum yield, and solution processability. Despite recent advances have pushed the luminance efficiency of monochromic perovskite light-emitting diodes (PeLEDs) to their theoretical limits, their current fabrication using the spin-coating process poses limitations for fabrication of full-color displays. To integrate PeLEDs into full-color display panels, it is crucial to pattern red-green-blue (RGB) perovskite pixels, while mitigating issues such as cross-contamination and reductions in luminous efficiency. Herein, we present state-of-the-art patterning technologies for the development of full-color PeLEDs. First, we highlight recent advances in the development of efficient PeLEDs. Second, we discuss various patterning techniques of MPHs (i.e., photolithography, inkjet printing, electron beam lithography and laser-assisted lithography, electrohydrodynamic jet printing, thermal evaporation, and transfer printing) for fabrication of RGB pixelated displays. These patterning techniques can be classified into two distinct approaches: in situ crystallization patterning using perovskite precursors and patterning of colloidal perovskite nanocrystals. This review highlights advancements and limitations in patterning techniques for PeLEDs, paving the way for integrating PeLEDs into full-color panels.
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Affiliation(s)
- Gwang Heon Lee
- Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Kiwook Kim
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea
| | - Yunho Kim
- Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Jiwoong Yang
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea.
- Energy Science and Engineering Research Center, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea.
| | - Moon Kee Choi
- Graduate School of Semiconductor Materials and Devices Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul, 08826, Republic of Korea.
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Park SY, Lee S, Yang J, Kang MS. Patterning Quantum Dots via Photolithography: A Review. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2300546. [PMID: 36892995 DOI: 10.1002/adma.202300546] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/17/2023] [Revised: 02/28/2023] [Indexed: 06/18/2023]
Abstract
Pixelating patterns of red, green, and blue quantum dots (QDs) is a critical challenge for realizing high-end displays with bright and vivid images for virtual, augmented, and mixed reality. Since QDs must be processed from a solution, their patterning process is completely different from the conventional techniques used in the organic light-emitting diode and liquid crystal display industries. Although innovative QD patterning technologies are being developed, photopatterning based on the light-induced chemical conversion of QD films is considered one of the most promising methods for forming micrometer-scale QD patterns that satisfy the precision and fidelity required for commercialization. Moreover, the practical impact will be significant as it directly exploits mature photolithography technologies and facilities that are widely available in the semiconductor industry. This article reviews recent progress in the effort to form QD patterns via photolithography. The review begins with a general description of the photolithography process. Subsequently, different types of photolithographical methods applicable to QD patterning are introduced, followed by recent achievements using these methods in forming high-resolution QD patterns. The paper also discusses prospects for future research directions.
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Affiliation(s)
- Se Young Park
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul, 04107, South Korea
| | - Seongjae Lee
- School of Chemical and Biological Engineering, Seoul National University, Seoul, 08826, South Korea
| | - Jeehye Yang
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul, 04107, South Korea
| | - Moon Sung Kang
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul, 04107, South Korea
- Institute of Emergent Materials, Sogang University, Seoul, 04107, South Korea
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Luo C, Zheng Z, Ding Y, Ren Z, Shi H, Ji H, Zhou X, Chen Y. High-Resolution, Highly Transparent, and Efficient Quantum Dot Light-Emitting Diodes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2303329. [PMID: 37335765 DOI: 10.1002/adma.202303329] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/10/2023] [Revised: 06/16/2023] [Indexed: 06/21/2023]
Abstract
Aiming at next-generation displays, high-resolution quantum dot light-emitting diodes (QLEDs) with high efficiency and transparency are highly desired. However, there is limited study involving the improvements of QLED pixel resolution, efficiency, and transparency simultaneously, which undoubtedly restricts the practical applications of QLED for next-generation displays. Here, the strategy of electrostatic force-induced deposition (EF-ID) is proposed by introducing alternating polyethyleneimine (PEI) and fluorosilane patterns to synergistically improve the pixel accuracy and transmittance of QD patterns. More importantly, the leakage current induced by the void spaces between pixels that is usually reported for high-resolution QLEDs is greatly suppressed by substrate-assisted insulating fluorosilane patterns. Finally, high-performance QLEDs with high resolution ranging from 1104 to 3031 pixels per inch (PPI) and a high efficiency of 15.6% are achieved, among the best performances of high resolution QLEDs. Notably, the high resolution QD pixels greatly enhance the transmittance of the QD patterns, thus prompting an impressive transmittance of 90.7% for the transparent QLEDs (2116 PPI), which represents the highest transmittance of transparent QLED devices. Consequently, this work contributes an effective and general approach for high-resolution QLEDs with high efficiency and transparency.
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Affiliation(s)
- Chengzhao Luo
- School of Optoelectronic Science and Engineering, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, P. R. China
| | - Zhishuai Zheng
- School of Optoelectronic Science and Engineering, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, P. R. China
| | - Yanhui Ding
- School of Optoelectronic Science and Engineering, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, P. R. China
| | - Zhenwei Ren
- School of Optoelectronic Science and Engineering, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, P. R. China
| | - Hengfei Shi
- School of Optoelectronic Science and Engineering, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, P. R. China
| | - Huifeng Ji
- School of Optoelectronic Science and Engineering, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, P. R. China
| | - Xin Zhou
- School of Optoelectronic Science and Engineering, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, P. R. China
| | - Yu Chen
- School of Optoelectronic Science and Engineering, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, P. R. China
- National University of Singapore Suzhou Research Institute, Dushu Lake Science and Education Innovation District, Suzhou, 215123, P. R. China
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Ko T, Kumar S, Shin S, Seo D, Seo S. Colloidal Quantum Dot Nanolithography: Direct Patterning via Electron Beam Lithography. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2111. [PMID: 37513122 PMCID: PMC10384559 DOI: 10.3390/nano13142111] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Revised: 07/18/2023] [Accepted: 07/18/2023] [Indexed: 07/30/2023]
Abstract
Micro/nano patterns based on quantum dots (QDs) are of great interest for applications ranging from electronics to photonics to sensing devices for biomedical purposes. Several patterning methods have been developed, but all lack the precision and reproducibility required to fabricate precise, complex patterns of less than one micrometer in size, or require specialized crosslinking ligands, limiting their application. In this study, we present a novel approach to directly pattern QD nanopatterns by electron beam lithography using commercially available colloidal QDs without additional modifications. We have successfully generated reliable dot and line QD patterns with dimensions as small as 140 nm. In addition, we have shown that using a 10 nm SiO2 spacer layer on a 50 nm Au layer substrate can double the fluorescence intensity compared to QDs on the Au layer without SiO2. This method takes advantage of traditional nanolithography without the need for a resist layer.
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Affiliation(s)
- Taewoo Ko
- Department of Electronics and Information Engineering, Korea University, Sejong 30019, Republic of Korea
| | - Samir Kumar
- Department of Electronics and Information Engineering, Korea University, Sejong 30019, Republic of Korea
| | - Sanghoon Shin
- Department of Electronics and Information Engineering, Korea University, Sejong 30019, Republic of Korea
| | - Dongmin Seo
- Department of Electrical Engineering, Semyung University, Jecheon 27136, Republic of Korea
| | - Sungkyu Seo
- Department of Electronics and Information Engineering, Korea University, Sejong 30019, Republic of Korea
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Nam TW, Choi MJ, Jung YS. Ultrahigh-resolution quantum dot patterning for advanced optoelectronic devices. Chem Commun (Camb) 2023; 59:2697-2710. [PMID: 36751869 DOI: 10.1039/d2cc05874j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/29/2023]
Abstract
Quantum dots have attracted significant scientific interest owing to their optoelectronic properties, which are distinct from their bulk counterparts. In order to fully utilize quantum dots for next generation devices with advanced functionalities, it is important to fabricate quantum dot colloids into dry patterns with desired feature sizes and shapes with respect to target applications. In this review, recent progress in ultrahigh-resolution quantum dot patterning technologies will be discussed, with emphasis on the characteristic advantages as well as the limitations of diverse technologies. This will provide guidelines for selecting suitable tools to handle quantum dot colloids throughout the fabrication of quantum dot based solid-state devices. Additionally, epitaxially fabricated single-particle level quantum dot arrays are discussed. These are extreme in terms of pattern resolution, and expand the potential application of quantum dots to quantum information processing.
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Affiliation(s)
- Tae Won Nam
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea.
| | - Min-Jae Choi
- Department of Chemical and Biochemical Engineering, Dongguk University, Seoul 04620, Republic of Korea.
| | - Yeon Sik Jung
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea.
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Bae JH, Kim S, Ahn J, Shin C, Jung BK, Lee YM, Hong YK, Kim W, Ha DH, Ng TN, Kim J, Oh SJ. Acid-Base Reaction-Assisted Quantum Dot Patterning via Ligand Engineering and Photolithography. ACS APPLIED MATERIALS & INTERFACES 2022; 14:47831-47840. [PMID: 36255043 DOI: 10.1021/acsami.2c10297] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The integration of quantum dots (QDs) into device arrays for high-resolution display and imaging sensor systems remains a significant challenge in research and industry because of issues associated with the QD patterning process. It is difficult for conventional patterning processes such as stamping, inkjet printing, and photolithography to employ QDs and fabricate high-resolution patterns without degrading the properties of QDs. Here, we introduce a novel strategy for the QD patterning process by treating QDs with a bifunctional ligand for acid-base reaction-assisted photolithography. Bifunctional ligands, such as MPA (mercaptopropionic acid) or TGA (thioglycolic acid), have a carboxyl group on one side that allows the QDs to be etched along with the photoresist (PR) by the base developer, while on the opposite side the ligands have a thiol group that passivates the QD surface. Passivating MPA ligands on QDs facilitates patterning of QD films and makes them compatible with harsh photolithography processes. We successfully achieved the patterning of QDs down to 5 μm. We also fabricated high-resolution patterned QD light-emitting diodes (LEDs) and QD photodetector arrays. Our patterning process provides precise control for the fabrication of highly integrated QD-based optoelectronic devices.
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Affiliation(s)
- Jung Ho Bae
- Department of Materials Science and Engineering, Korea University, Seoul02841, Republic of Korea
| | - Suhyeon Kim
- Department of Advanced Materials Engineering, Kyonggi University, Suwon-si, Gyeonggi-do16227, Republic of Korea
| | - Junhyuk Ahn
- Department of Materials Science and Engineering, Korea University, Seoul02841, Republic of Korea
| | - Chanho Shin
- Materials Science Engineering Program and Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, California92093,United States
| | - Byung Ku Jung
- Department of Materials Science and Engineering, Korea University, Seoul02841, Republic of Korea
| | - Yong Min Lee
- Department of Semiconductor Systems Engineering, Korea University, Seoul02841, Republic of Korea
| | - Yun Kun Hong
- School of Integrative Engineering, Chung-Ang University, Seoul06974, Republic of Korea
| | - Woosik Kim
- Department of Materials Science and Engineering, Korea University, Seoul02841, Republic of Korea
| | - Don Hyung Ha
- School of Integrative Engineering, Chung-Ang University, Seoul06974, Republic of Korea
| | - Tse Nga Ng
- Materials Science Engineering Program and Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, California92093,United States
| | - Jiwan Kim
- Department of Advanced Materials Engineering, Kyonggi University, Suwon-si, Gyeonggi-do16227, Republic of Korea
| | - Soong Ju Oh
- Department of Materials Science and Engineering, Korea University, Seoul02841, Republic of Korea
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Wang R, Xiang H, Tu S, Li Y, Zhou Y, Zeng H. Full solution-processed heavy-metal-free mini-QLEDs for flexible display applications. NANOSCALE 2022; 14:12736-12743. [PMID: 36000404 DOI: 10.1039/d2nr03082a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Micro/mini displays play an extremely significant role in the modern information society, which is treated as a promising technology for a range of applications. Here, utilizing the full solution process with the electrode array mask, we successfully achieved passive-matrix and active-matrix mini-quantum dot light-emitting diodes (PM/AM-m-QLEDs) based on heavy-metal-free blue ZnTeSe/ZnS QDs. The pixels per inch (PPI) of m-QLEDs fabricated in this study can reach 36, 90, 180, and 360, which meet the requirements of televisions, computers, and mobile phones. Moreover, by adjusting the electrodes, m-QLEDs achieved patterned display applications based on both flexible and solid substrates. These results imply that heavy-metal-free blue m-QLEDs show a wide display application potential, i.e., AM/PM displays. Given the low-cost advantage of solution-processed QDs, our proposed techniques could pave the way for low-cost displays.
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Affiliation(s)
- Run Wang
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
| | - Hengyang Xiang
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
| | - Siyuan Tu
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
| | - Yan Li
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
| | - Yihui Zhou
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
| | - Haibo Zeng
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.
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Hahm D, Lim J, Kim H, Shin JW, Hwang S, Rhee S, Chang JH, Yang J, Lim CH, Jo H, Choi B, Cho NS, Park YS, Lee DC, Hwang E, Chung S, Kang CM, Kang MS, Bae WK. Direct patterning of colloidal quantum dots with adaptable dual-ligand surface. NATURE NANOTECHNOLOGY 2022; 17:952-958. [PMID: 35953539 DOI: 10.1038/s41565-022-01182-5] [Citation(s) in RCA: 31] [Impact Index Per Article: 15.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/21/2022] [Accepted: 06/24/2022] [Indexed: 06/15/2023]
Abstract
Colloidal quantum dots (QDs) stand at the forefront of a variety of photonic applications given their narrow spectral bandwidth and near-unity luminescence efficiency. However, integrating luminescent QD films into photonic devices without compromising their optical or transport characteristics remains challenging. Here we devise a dual-ligand passivation system comprising photocrosslinkable ligands and dispersing ligands to enable QDs to be universally compatible with solution-based patterning techniques. The successful control over the structure of both ligands allows the direct patterning of dual-ligand QDs on various substrates using commercialized photolithography (i-line) or inkjet printing systems at a resolution up to 15,000 pixels per inch without compromising the optical properties of the QDs or the optoelectronic performance of the device. We demonstrate the capabilities of our approach for QD-LED applications. Our approach offers a versatile way of creating various structures of luminescent QDs in a cost-effective and non-destructive manner, and could be implemented in nearly all commercial photonics applications where QDs are used.
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Affiliation(s)
- Donghyo Hahm
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, Republic of Korea
| | - Jaemin Lim
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, Republic of Korea
| | - Hyeokjun Kim
- Department of Chemical and Biomolecular Engineering, Institute of Emergent Materials, Sogang University, Seoul, Republic of Korea
| | - Jin-Wook Shin
- Reality Display Research Section, Electronics and Telecommunications Research Institute (ETRI), Daejeon, Republic of Korea
| | - Seongkwon Hwang
- Soft Hybrid Materials Research Center, Korea Institute of Science and Technology, Seoul, Republic of Korea
| | - Seunghyun Rhee
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, Republic of Korea
- Advanced Materials Division, Korea Research Institute of Chemical Technology, Daejeon, Republic of Korea
| | - Jun Hyuk Chang
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, Republic of Korea
| | - Jeehye Yang
- Department of Chemical and Biomolecular Engineering, Institute of Emergent Materials, Sogang University, Seoul, Republic of Korea
| | - Chang Hyeok Lim
- Department of Chemical and Biomolecular Engineering, Institute of Emergent Materials, Sogang University, Seoul, Republic of Korea
| | - Hyunwoo Jo
- Department of Chemical and Biomolecular Engineering, Institute of Emergent Materials, Sogang University, Seoul, Republic of Korea
| | - Beomgyu Choi
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, Republic of Korea
| | - Nam Sung Cho
- Reality Display Research Section, Electronics and Telecommunications Research Institute (ETRI), Daejeon, Republic of Korea
| | - Young-Shin Park
- Department of Chemical and Biomolecular Engineering, KAIST Institute for the Nanocentury, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
| | - Doh C Lee
- Department of Chemical and Biomolecular Engineering, KAIST Institute for the Nanocentury, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
| | - Euyheon Hwang
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, Republic of Korea
| | - Seungjun Chung
- Soft Hybrid Materials Research Center, Korea Institute of Science and Technology, Seoul, Republic of Korea
| | - Chan-Mo Kang
- Reality Display Research Section, Electronics and Telecommunications Research Institute (ETRI), Daejeon, Republic of Korea.
| | - Moon Sung Kang
- Department of Chemical and Biomolecular Engineering, Institute of Emergent Materials, Sogang University, Seoul, Republic of Korea.
| | - Wan Ki Bae
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, Republic of Korea.
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12
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Choi MJ, Hwang YJ, Pyun SB, Kim JH, Kim JY, Hong W, Park JY, Kwak J, Cho EC. Reaction-Based Scalable Inorganic Patterning on Rigid and Soft Substrates for Photovoltaic Roofs with Minimal Optical Loss and Sustainable Sunlight-Driven-Cleaning Windows. ACS APPLIED MATERIALS & INTERFACES 2022; 14:38339-38350. [PMID: 35968862 DOI: 10.1021/acsami.2c09145] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Recently developed fabrication methods for inorganic patterns (such as laser printing and optical lithography) can avoid some patterning processes conducted by conventional etching and lithography (such as substrate etching and modulation) and are thereby useful for applications in which the substrates and materials must not be damaged during patterning. Simultaneously, it is also necessary to develop facile and economical methods producing inorganic patterns on various substrates without requiring a special apparatus while attaining the above-mentioned advantages. The present study proposes a reaction-based method for fabricating inorganic patterns by immersing substrates coated with a colloidal nanosheet into an aqueous solution containing inorganic precursors. Silica and TiO2 patterns spontaneously developed during the conversion of each inorganic precursor. These patterns were successful on rigid and flexible substrates. We fabricated these patterns on a wafer-sized silicon and large flexible poly(ethylene terephthalate) film, suggesting the scalability. We fabricated a biomimetic pattern on both sides of a glass window, as a photovoltaic roof, for minimal optical losses to maximally present photovoltaic effects of a solar cell. The TiO2 pattern on glass window exhibits sustainable sunlight-driven-cleaning activity for contaminants. The method could provide a platform for economical high-performance inorganic patterns for energy, environmental, electronics, and other areas.
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Affiliation(s)
- Min Ju Choi
- Department of Chemical Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Young Ji Hwang
- Department of Chemical Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Seung Beom Pyun
- Department of Chemical Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Jeong Han Kim
- Department of Chemical Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Jung Yeon Kim
- Department of Chemical Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Woongpyo Hong
- Materials Research and Engineering Center, Hyundai Motor Company, 37 Cheoldobangmulgwan-ro, Uiwang-si, Gyeonggi-do 16082, Republic of Korea
| | - Jung-Yeon Park
- Materials Research and Engineering Center, Hyundai Motor Company, 37 Cheoldobangmulgwan-ro, Uiwang-si, Gyeonggi-do 16082, Republic of Korea
| | - Jinwoo Kwak
- Materials Research and Engineering Center, Hyundai Motor Company, 37 Cheoldobangmulgwan-ro, Uiwang-si, Gyeonggi-do 16082, Republic of Korea
| | - Eun Chul Cho
- Department of Chemical Engineering, Hanyang University, Seoul 04763, Republic of Korea
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13
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Chang S, Jin J, Kyhm J, Park TH, Ahn J, Park SYL, Park SI, Hwang DK, Choi SS, Seong TY, Song JD, Hwang GW. SWIR imaging using PbS QD photodiode array sensors. OPTICS EXPRESS 2022; 30:20659-20665. [PMID: 36224805 DOI: 10.1364/oe.459090] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/24/2022] [Accepted: 05/13/2022] [Indexed: 06/16/2023]
Abstract
We fabricated a 1 × 10 PbS QD photodiode array with multiple stacked QD layers with high-resolution patterning using a customized photolithographic process. The array showed the average responsivity of 5.54 × 10-3 A/W and 1.20 × 10-2 A/W at 0 V and -1 V under 1310- nm short-wavelength infrared (SWIR) illumination. The standard deviation of the pixel responsivity was under 10%, confirming the uniformity of the fabrication process. The response time was 2.2 ± 0.13 ms, and the bandwidth was 159.1 Hz. A prototype 1310-nm SWIR imager demonstrated that the QD photodiode-based SWIR image sensor is a cost-effective and practical alternative for III-V SWIR image sensors.
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14
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Zhao B, Wang Q, Li D, Yang H, Bai X, Li S, Liu P, Sun X. Red and Green Quantum Dot Color Filter for Full-Color Micro-LED Arrays. MICROMACHINES 2022; 13:mi13040595. [PMID: 35457900 PMCID: PMC9029460 DOI: 10.3390/mi13040595] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/11/2022] [Revised: 03/10/2022] [Accepted: 03/13/2022] [Indexed: 11/27/2022]
Abstract
This work demonstrated color-conversion layers of red and green quantum dots color filter for full-color display arrays. Ligands exchange using (3-glycidyloxypropyl) trimethoxysilane with epoxy functional groups to treat QDs in the liquid phase was performed for photolithography use. The combination of ligands of QDs with photo-initiator played a protective role on QDs. Moreover, the pixel size of green QDCF can be reduced to 50 μm, and a high optical density (OD) of 1.2 is realized.
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Affiliation(s)
- Bingxin Zhao
- The Theory Tech. Co., Ltd., Bao’an, Shenzhen 518126, China
- Shenzhen Key Lab for Advanced Quantum Dot Display and Lighting, Department of Electrical & Electronic Engineering, Southern University of Science and Technology, Shenzhen 518005, China; (Q.W.); (D.L.); (H.Y.); (X.B.); (S.L.); (P.L.)
- Correspondence: (B.Z.); (X.S.)
| | - Qingqian Wang
- Shenzhen Key Lab for Advanced Quantum Dot Display and Lighting, Department of Electrical & Electronic Engineering, Southern University of Science and Technology, Shenzhen 518005, China; (Q.W.); (D.L.); (H.Y.); (X.B.); (S.L.); (P.L.)
| | - Depeng Li
- Shenzhen Key Lab for Advanced Quantum Dot Display and Lighting, Department of Electrical & Electronic Engineering, Southern University of Science and Technology, Shenzhen 518005, China; (Q.W.); (D.L.); (H.Y.); (X.B.); (S.L.); (P.L.)
| | - Hongcheng Yang
- Shenzhen Key Lab for Advanced Quantum Dot Display and Lighting, Department of Electrical & Electronic Engineering, Southern University of Science and Technology, Shenzhen 518005, China; (Q.W.); (D.L.); (H.Y.); (X.B.); (S.L.); (P.L.)
| | - Xue Bai
- Shenzhen Key Lab for Advanced Quantum Dot Display and Lighting, Department of Electrical & Electronic Engineering, Southern University of Science and Technology, Shenzhen 518005, China; (Q.W.); (D.L.); (H.Y.); (X.B.); (S.L.); (P.L.)
| | - Shang Li
- Shenzhen Key Lab for Advanced Quantum Dot Display and Lighting, Department of Electrical & Electronic Engineering, Southern University of Science and Technology, Shenzhen 518005, China; (Q.W.); (D.L.); (H.Y.); (X.B.); (S.L.); (P.L.)
| | - Pai Liu
- Shenzhen Key Lab for Advanced Quantum Dot Display and Lighting, Department of Electrical & Electronic Engineering, Southern University of Science and Technology, Shenzhen 518005, China; (Q.W.); (D.L.); (H.Y.); (X.B.); (S.L.); (P.L.)
| | - Xiaowei Sun
- Shenzhen Key Lab for Advanced Quantum Dot Display and Lighting, Department of Electrical & Electronic Engineering, Southern University of Science and Technology, Shenzhen 518005, China; (Q.W.); (D.L.); (H.Y.); (X.B.); (S.L.); (P.L.)
- Correspondence: (B.Z.); (X.S.)
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15
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Pyeon J, Song KM, Jung YS, Kim H. Self-Induced Solutal Marangoni Flows Realize Coffee-Ring-Less Quantum Dot Microarrays with Extensive Geometric Tunability and Scalability. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2104519. [PMID: 35129308 PMCID: PMC9008421 DOI: 10.1002/advs.202104519] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/11/2021] [Revised: 01/20/2022] [Indexed: 06/14/2023]
Abstract
Currently, quantum dot light-emitting diodes (QD-LEDs) are receiving extensive attention. To maximize their luminous performance, the uniformity of the QD-LEDs is crucial. Although the spontaneously self-induced solutal Marangoni flow of an evaporating binary mixture droplet has been widely investigated and used to suppress coffee-ring patterns in ink-jet printing technology, unfortunately, ring shapes are still present at the edges, and the Marangoni flow generated by the selective evaporation of volatile liquid components cannot be controlled due to its nonlinear instabilities. In this work, polygonal coffee-ring-less QD microarrays are created using two spontaneous and sequential solutal Marangoni flows. During the initial evaporation, internal circulating flows are controlled by polygonal-shaped droplets. After that, sequential interfacial flows are generated by the captured volatile vapors. A theoretical model and scaling analysis are provided to explain the working mechanisms. It is expected that the newly designed printing system can be applied to the mass production of QD-LEDs.
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Affiliation(s)
- Jeongsu Pyeon
- Department of Mechanical EngineeringKorea Advanced Institute of Science and TechnologyDaejeon34141Republic of Korea
| | - Kyeong Min Song
- Department of Materials Science and EngineeringKorea Advanced Institute of Science and TechnologyDaejeon34141Republic of Korea
| | - Yeon Sik Jung
- Department of Materials Science and EngineeringKorea Advanced Institute of Science and TechnologyDaejeon34141Republic of Korea
| | - Hyoungsoo Kim
- Department of Mechanical EngineeringKorea Advanced Institute of Science and TechnologyDaejeon34141Republic of Korea
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16
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De Leo E, Rossinelli AA, Marqués-Gallego P, Poulikakos LV, Norris DJ, Prins F. Polarization-based colour tuning of mixed colloidal quantum-dot thin films using direct patterning. NANOSCALE 2022; 14:4929-4934. [PMID: 35316316 DOI: 10.1039/d1nr07136j] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Colloidal quantum-dots (cQDs) are finding increasingly widespread application in photonics and optoelectronics, providing high brightness and record-wide colour gamuts. However, the external quantum efficiencies in thin-film device architectures are still limited due to losses into waveguide modes and different strategies are being explored to promote the outcoupling of emission. Here we use a template-stripping-based direct-patterning strategy to fabricate linear gratings at the surface of cQD thin films. The linear gratings enhance optical outcoupling through Bragg scattering, yielding bright emission with a strong degree of linear polarization. By patterning linear gratings with different periodicities and orientations onto a film of mixed-colour cQDs, we demonstrate polarization-based active colour tuning of the thin-film emission.
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Affiliation(s)
- Eva De Leo
- Optical Materials Engineering Laboratory, ETH Zürich, Leonhardstrasse 21, Zürich 8092, Switzerland.
| | - Aurelio A Rossinelli
- Optical Materials Engineering Laboratory, ETH Zürich, Leonhardstrasse 21, Zürich 8092, Switzerland.
| | - Patricia Marqués-Gallego
- Optical Materials Engineering Laboratory, ETH Zürich, Leonhardstrasse 21, Zürich 8092, Switzerland.
| | - Lisa V Poulikakos
- Optical Materials Engineering Laboratory, ETH Zürich, Leonhardstrasse 21, Zürich 8092, Switzerland.
| | - David J Norris
- Optical Materials Engineering Laboratory, ETH Zürich, Leonhardstrasse 21, Zürich 8092, Switzerland.
| | - Ferry Prins
- Optical Materials Engineering Laboratory, ETH Zürich, Leonhardstrasse 21, Zürich 8092, Switzerland.
- Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, Calle Francisco Tomas y Valiente 6, Madrid 29049, Spain
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17
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Myeong S, Chon B, Kumar S, Son HJ, Kang SO, Seo S. Quantum dot photolithography using a quantum dot photoresist composed of an organic-inorganic hybrid coating layer. NANOSCALE ADVANCES 2022; 4:1080-1087. [PMID: 36131767 PMCID: PMC9417674 DOI: 10.1039/d1na00744k] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/13/2021] [Accepted: 01/10/2022] [Indexed: 06/01/2023]
Abstract
Quantum dots (QDs) have emerged as an important class of materials for diverse applications such as solid-state lighting, energy conversion, displays, biomedicine, and plasmonics due to their excellent photonic properties and durability. Soft lithography, inkjet printing, nanoimprinting, and polymer deep-pen lithography are primary lithography techniques employed to implement micro-patterns with QDs, however, there are limited reports on QD photolithography using conventional photolithography processes suitable for mass production. This study reports a QD photolithography technique using a custom-developed QD photoresist made of an organic-inorganic hybrid coating layer. Using this QD photoresist, various QD micro-patterns, including red or green micro lines, RGB color filters for smartphone displays at 340 ppi, and atypical micro logo patterns of the Korea University, were successfully fabricated. Furthermore, various process parameters were developed for the QD photolithography with this custom QD photoresist, and the optical properties of the QD films were also investigated. To demonstrate its applicability in contemporary smartphone displays, the color coordinates of the QD films were compared to those of the BT.2020 standard. The chromaticity of the QD photoresist in CIE 1931 color space covered 98.7% of the NTSC (1987) area while providing more expansive color space. Overall, the QD photoresist and its photolithography techniques reported in this study hold great promise in various fields of QD-based applications, including bio-labeling, optical detectors, and solar cells.
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Affiliation(s)
- Seungmin Myeong
- Department of Electronics and Information Engineering, Korea University Sejong 30019 Republic of Korea
| | - Bumsoo Chon
- Department of Advanced Materials Chemistry, Korea University Sejong 30019 Republic of Korea
| | - Samir Kumar
- Department of Electronics and Information Engineering, Korea University Sejong 30019 Republic of Korea
| | - Ho-Jin Son
- Department of Advanced Materials Chemistry, Korea University Sejong 30019 Republic of Korea
| | - Sang Ook Kang
- Department of Advanced Materials Chemistry, Korea University Sejong 30019 Republic of Korea
| | - Sungkyu Seo
- Department of Electronics and Information Engineering, Korea University Sejong 30019 Republic of Korea
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18
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Hayashi S, Tsunemitsu K, Terakawa M. Laser Direct Writing of Graphene Quantum Dots inside a Transparent Polymer. NANO LETTERS 2022; 22:775-782. [PMID: 34962395 DOI: 10.1021/acs.nanolett.1c04295] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Graphene quantum dots (GQDs) have emerged as a promising new class of environmentally friendly quantum dots with unique properties. However, the limitations of synthesis and patterning methods have hindered GQDs from displaying their true potentials to date. Here, we demonstrate the simultaneous synthesis and patterning of GQDs for the first time inside a transparent polymer, polydimethylsiloxane (PDMS), using femtosecond laser pulses. By focusing and scanning femtosecond laser pulses, arbitrary fluorescent patterns such as a concealed fluorescent QR code can be readily patterned without pre- and/or post-treatment. In addition, the proposed method is applied to the fabrication of fluorescent three-dimensional structures inside a transparent polymer via multiphoton interactions. The proposed method realizes single-stepped and spatially selective patterning of GQDs directly inside polymer substrates and expands the possibilities of GQDs for applications in novel flexible three-dimensional optoelectrical devices.
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19
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Amadi EV, Venkataraman A, Papadopoulos C. Nanoscale self-assembly: concepts, applications and challenges. NANOTECHNOLOGY 2022; 33. [PMID: 34874297 DOI: 10.1088/1361-6528/ac3f54] [Citation(s) in RCA: 19] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/01/2021] [Accepted: 12/02/2021] [Indexed: 05/09/2023]
Abstract
Self-assembly offers unique possibilities for fabricating nanostructures, with different morphologies and properties, typically from vapour or liquid phase precursors. Molecular units, nanoparticles, biological molecules and other discrete elements can spontaneously organise or form via interactions at the nanoscale. Currently, nanoscale self-assembly finds applications in a wide variety of areas including carbon nanomaterials and semiconductor nanowires, semiconductor heterojunctions and superlattices, the deposition of quantum dots, drug delivery, such as mRNA-based vaccines, and modern integrated circuits and nanoelectronics, to name a few. Recent advancements in drug delivery, silicon nanoelectronics, lasers and nanotechnology in general, owing to nanoscale self-assembly, coupled with its versatility, simplicity and scalability, have highlighted its importance and potential for fabricating more complex nanostructures with advanced functionalities in the future. This review aims to provide readers with concise information about the basic concepts of nanoscale self-assembly, its applications to date, and future outlook. First, an overview of various self-assembly techniques such as vapour deposition, colloidal growth, molecular self-assembly and directed self-assembly/hybrid approaches are discussed. Applications in diverse fields involving specific examples of nanoscale self-assembly then highlight the state of the art and finally, the future outlook for nanoscale self-assembly and potential for more complex nanomaterial assemblies in the future as technological functionality increases.
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Affiliation(s)
- Eberechukwu Victoria Amadi
- University of Victoria, Department of Electrical and Computer Engineering, PO BOX 1700 STN CSC, Victoria, BC, V8W 2Y2, Canada
| | - Anusha Venkataraman
- University of Victoria, Department of Electrical and Computer Engineering, PO BOX 1700 STN CSC, Victoria, BC, V8W 2Y2, Canada
| | - Chris Papadopoulos
- University of Victoria, Department of Electrical and Computer Engineering, PO BOX 1700 STN CSC, Victoria, BC, V8W 2Y2, Canada
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20
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Ye ZT, Wu JY. Use of Recycling-Reflection Color-Purity Enhancement Film to Improve Color Purity of Full-Color Micro-LEDs. NANOSCALE RESEARCH LETTERS 2022; 17:1. [PMID: 34978610 PMCID: PMC8724495 DOI: 10.1186/s11671-021-03642-8] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/15/2021] [Accepted: 12/16/2021] [Indexed: 06/08/2023]
Abstract
A common full-color method involves combining micro-light-emitting diodes (LEDs) chips with color conversion materials such as quantum dots (QDs) to achieve full color. However, during color conversion between micro-LEDs and QDs, QDs cannot completely absorb incident wavelengths cause the emission wavelengths that including incident wavelengths and converted wavelength through QDs, which compromises color purity. The present paper proposes the use of a recycling-reflection color-purity-enhancement film (RCPEF) to reflect the incident wavelength multiple times and, consequently, prevent wavelength mixing after QDs conversion. This RCPEF only allows the light of a specific wavelength to pass through it, exciting blue light is reflected back to the red and green QDs layer. The prototype experiment indicated that with an excitation light source wavelength of 445.5 nm, the use of green QDs and RCPEFs increased color purity from 77.2% to 97.49% and light conversion efficiency by 1.97 times and the use of red QDs and RCPEFs increased color purity to 94.68% and light conversion efficiency by 1.46 times. Thus, high efficiency and color purity were achieved for micro-LEDs displays.
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Affiliation(s)
- Zhi Ting Ye
- Department of Mechanical Engineering, Advanced Institute of Manufacturing with High-Tech Innovations, National Chung Cheng University, 168, University Rd., Min-Hsiung, Chia-Yi, 62102, Taiwan.
| | - Jun-Yi Wu
- Department of Mechanical Engineering, Advanced Institute of Manufacturing with High-Tech Innovations, National Chung Cheng University, 168, University Rd., Min-Hsiung, Chia-Yi, 62102, Taiwan
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21
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Han T, Noh J, Kim MH, Rho J, Jo H. Pixelated Microsized Quantum Dot Arrays Using Surface-Tension-Induced Flow. ACS APPLIED MATERIALS & INTERFACES 2021; 13:51718-51725. [PMID: 34677928 DOI: 10.1021/acsami.1c14857] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Quantum dots (QDs) are semiconducting nanoparticles that exhibit unique fluorescent characteristics when excited by an ultraviolet light source. Owing to their highly saturated emissions, display panels using QDs as pixels have been presented. However, the complications of the nanofabrication procedure limit the industrial application of QDs. This study suggests a method to arrange high-aspect-ratio QD pixels by inducing both Laplace-pressure-driven capillary flow and thermally driven Marangoni flow. The evaporation of colloidal QDs induces a capillary flow that drives the QDs toward the inner tips of V-shaped structures. Additionally, the Marangoni flow arranges the gathered QDs at the tip; thus, they could form a high dune, overcoming the limitations of the existing capillary assembly method using evaporation. Using these phenomena, clover-shaped (assembly of V-shaped edges) templates were made to gather numerous QDs, and the clover with a 30° angle afforded the highest brightness among all the angle structures. Finally, by demonstrating a 100-cm2-sized QD microarray with high uniformity (98.6%), our method shows the feasibility of large-area fabrication, which has extensive application in manufacturing QD displays, anti-counterfeiting labels, and other QD-based optical devices.
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Affiliation(s)
- Taeyang Han
- Division of Advanced Nuclear Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Jaebum Noh
- Department of Mechanical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Moo Hwan Kim
- Division of Advanced Nuclear Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
- Department of Mechanical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Junsuk Rho
- Department of Mechanical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
- POSCO-POSTECH-RIST Convergence Research Center for Flat Optics and Metaphotonics, Pohang 37673, Republic of Korea
| | - HangJin Jo
- Division of Advanced Nuclear Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
- Department of Mechanical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
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22
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Ahn S, Chen W, Vazquez-Mena O. High resolution patterning of PbS quantum dots/graphene photodetectors with high responsivity via photolithography with a top graphene layer to protect surface ligands. NANOSCALE ADVANCES 2021; 3:6206-6212. [PMID: 36133947 PMCID: PMC9417613 DOI: 10.1039/d1na00582k] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/26/2021] [Accepted: 08/24/2021] [Indexed: 06/15/2023]
Abstract
Photodetectors based on colloidal quantum dots (CQDs) and single layer graphene (SLG) have shown high responsivity due to the synergy of strong light absorption from CQDs and high mobility from SLG. However, it is still challenging to achieve high-density and small-footprint devices on a chip to meet the demand for their integration into electronic devices. Even though there are numerous approaches to pattern the chemically fragile CQD films, usually they require non-conventional approaches such as stamping and surface modification that may be non-compatible with semiconductor processing. In this study, we show that conventional lithography and dry etching can be used to pattern QD active films by employing a graphene monolayer passivation/protective layer that protects the surface ligands of CQDs. This protective layer avoids damage induced by lithography process solvents that deteriorate the carrier mobility of CQDs and therefore the photoresponse. Herein we report patterning of CQDs using conventional UV photolithography, achieving reproducible five-micron length PbS CQDs/SLG photodetectors with a responsivity of 108 A W-1. We have also fabricated thirty-six PbS CQDs/SLG photodetectors on a single chip to establish micron size photodetectors. This process offers an approach to pattern QDs with conventional UV lithography and dry etching semiconductor technology to facilitate their integration into current semiconductor commercial technology.
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Affiliation(s)
- Seungbae Ahn
- Department of Nanoengineering, Center for Memory and Recording Research, Calibaja Center for Resilient Materials and Systems, University of California San Diego 9500 Gilman Drive La Jolla CA 92093 USA
| | - Wenjun Chen
- Department of Nanoengineering, Center for Memory and Recording Research, Calibaja Center for Resilient Materials and Systems, University of California San Diego 9500 Gilman Drive La Jolla CA 92093 USA
| | - Oscar Vazquez-Mena
- Department of Nanoengineering, Center for Memory and Recording Research, Calibaja Center for Resilient Materials and Systems, University of California San Diego 9500 Gilman Drive La Jolla CA 92093 USA
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23
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Kim GH, Lee J, Lee JY, Han J, Choi Y, Kang CJ, Kim KB, Lee W, Lim J, Cho SY. High-Resolution Colloidal Quantum Dot Film Photolithography via Atomic Layer Deposition of ZnO. ACS APPLIED MATERIALS & INTERFACES 2021; 13:43075-43084. [PMID: 34463100 DOI: 10.1021/acsami.1c11898] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
High-resolution patterning of quantum dot (QD) films is one of the preconditions for the practical use of QD-based emissive display platforms. Recently, inkjet printing and transfer printing have been actively developed; however, high-resolution patterning is still limited owing to nozzle-clogging issues and coffee ring effects during the inkjet printing and kinetic parameters such as pickup and peeling speed during the transfer process. Consequently, employing direct optical lithography would be highly beneficial owing to its well-established process in the semiconductor industry; however, exposing the photoresist (PR) on top of the QD film deteriorates the QD film underneath. This is because a majority of the solvents for PR easily dissolve the pre-existing QD films. In this study, we present a conventional optical lithography process to obtain solvent resistance by reacting the QD film surface with diethylzinc (DEZ) precursors using atomic layer deposition. It was confirmed that, by reacting the QD surface with DEZ and coating PR directly on top of the QD film, a typical photolithography process can be performed to generate a red/green/blue pixel of 3000 ppi or more. QD electroluminescence devices were fabricated with all primary colors of QDs; moreover, compared to reference QD-LED devices, the patterned QD-LED devices exhibited enhanced brightness and efficiency.
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Affiliation(s)
| | | | | | | | | | | | - Ki-Bum Kim
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Korea
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24
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Preparation and electrochemical application of an
AgNW
/graphene/
SU
‐8 composite conductive photoresist. J Appl Polym Sci 2021. [DOI: 10.1002/app.51205] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/07/2023]
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25
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Mitchell J, Weimer JJ. Controlled Spreading Rates to Distribute Nanoparticles as Uniform Langmuir Films. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2021; 37:5139-5150. [PMID: 33872033 DOI: 10.1021/acs.langmuir.1c00032] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
We report on using a controlled spreading rate to create Langmuir films of nanoparticles with more uniform, macroscale packing. A dispersion of hydrophobic quantum dots in n-hexane was deposited on subphase solutions containing various compositions of water and glycerol. Fluorescence images were captured as the film spread radially. An average spreading rate was defined using film radius and time at maximum expansion. On water with the highest spreading rate, films have an open region surrounded by a coffee ring. At a well-defined slower spreading rate, a distinct inner compact region appears between the open film and coffee ring, now called an outer compact region. As the spreading rate decreases further, the relative position for the open film boundary moves inward while the relative areas for the inner and outer compact regions increase. Films are the smallest in size at the slowest spreading rate on glycerol. The patterns are button-like with a central depleted region (open film), compact inner and outer regions, and a less-dense outer edge region. Normalized radial profiles were used to generate a partition map for the relative radial positions marking each film region at different spreading rates. Area number densities were calculated in the highest-packed regions. The values give no conclusive evidence that nanoparticles stack as multilayers, even the most compactly covered regions. Films spreading on glycerol form the most uniform, circular-shaped, densely packed arrangement of nanoparticles as their final pattern.
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Huang WP, Chen XC, Hu M, Wang J, Qian HL, Hu DF, Dong RL, Xu SY, Ren KF, Ji J. Dynamic Porous Pattern through Controlling Noncovalent Interactions in Polyelectrolyte Film for Sequential and Regional Encapsulation. ACS APPLIED MATERIALS & INTERFACES 2020; 12:42081-42088. [PMID: 32937689 DOI: 10.1021/acsami.0c09580] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2023]
Abstract
Inspired by nature, many functional surfaces have been developed with special structures in biology, chemistry, and materials. Many research studies have been focused on the preparation of surfaces with static structure. Achieving dynamical manipulation of surface structure is desired but still a great challenge. Herein, a polyelectrolyte film capable of regional and reversible changes in the microporous structure is presented. Our proposal is based on the combination of azobenzene (Azo) π-π stacking and electrostatic interaction, which could be affected respectively by ultraviolet (UV) irradiation and water plasticization, to tune the mobility of polyelectrolyte chains. The porous patterns can be obtained after regional ultraviolet irradiation and acid treatment. Owing to the reversibility of Azo π-π stacking and electrostatic interaction, the patterns can be repeatedly created and erased in the polyelectrolyte film made by layer-by-layer (LbL) self-assembly of poly(ethyleneimine)-azo and poly(acrylic acid). Furthermore, through two rounds of porous pattern formation and erasure, different functional species can be loaded separately and confined regionally within the film, showing potential applications in the functional surface. This work highlights the coordination of two noncovalent interactions in thin films for regional and reversible controlling its structure, opening a window for more in-depth development of functional surfaces.
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Affiliation(s)
- Wei-Pin Huang
- MOE Key Laboratory of Macromolecule Synthesis and Functionalization, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Xia-Chao Chen
- MOE Key Laboratory of Macromolecule Synthesis and Functionalization, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Mi Hu
- MOE Key Laboratory of Macromolecule Synthesis and Functionalization, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Jing Wang
- MOE Key Laboratory of Macromolecule Synthesis and Functionalization, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Hong-Lin Qian
- MOE Key Laboratory of Macromolecule Synthesis and Functionalization, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Deng-Feng Hu
- MOE Key Laboratory of Macromolecule Synthesis and Functionalization, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Rui-Lin Dong
- MOE Key Laboratory of Macromolecule Synthesis and Functionalization, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Song-Yi Xu
- MOE Key Laboratory of Macromolecule Synthesis and Functionalization, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Ke-Feng Ren
- MOE Key Laboratory of Macromolecule Synthesis and Functionalization, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Jian Ji
- MOE Key Laboratory of Macromolecule Synthesis and Functionalization, Department of Polymer Science and Engineering, Zhejiang University, Hangzhou 310027, China
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Unique and outstanding quantum dots (QD)/tunicate cellulose nanofibrils (TCNF) nanohybrid platform material for use as 1D ink and 2D film. Carbohydr Polym 2020; 242:116396. [PMID: 32564848 DOI: 10.1016/j.carbpol.2020.116396] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/17/2020] [Revised: 04/26/2020] [Accepted: 04/28/2020] [Indexed: 12/30/2022]
Abstract
Quantum dots (QD)/polymer materials have wide applications in biological imaging, clinical diagnostics, anti-counterfeiting materials, light-emitting devices and solar cells. The development of QD/cellulose nanofibrils (CNF) hybrids with a more perfect structure and excellent properties is important for improving known applications. A unique tunicate CNF (TCNF) was homogeneously blended with outstanding CdSe/CdS core/shell QD to prepare a novel QD/TCNF hybrid. The QD were monodispersed on a single TCNF fibril surface as an evenly distributed monolayer with an extremely high packing density and no visible aggregation. The prepared hybrid is an excellent platform nanomaterial which was demonstrated by its good writing fidelity when applied as a 1D ink and by its good processability in the preparation of 2D films with acceptable transparency and flexibility. This one-step direct blending approach provides a facile shortcut to effectively fabricate cellulose-based high-performance functional QD nanomaterials at the single-fibril level.
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Yang J, Hahm D, Kim K, Rhee S, Lee M, Kim S, Chang JH, Park HW, Lim J, Lee M, Kim H, Bang J, Ahn H, Cho JH, Kwak J, Kim B, Lee C, Bae WK, Kang MS. High-resolution patterning of colloidal quantum dots via non-destructive, light-driven ligand crosslinking. Nat Commun 2020; 11:2874. [PMID: 32513918 PMCID: PMC7280294 DOI: 10.1038/s41467-020-16652-4] [Citation(s) in RCA: 61] [Impact Index Per Article: 15.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/15/2019] [Accepted: 05/12/2020] [Indexed: 01/02/2023] Open
Abstract
Establishing multi-colour patterning technology for colloidal quantum dots is critical for realising high-resolution displays based on the material. Here, we report a solution-based processing method to form patterns of quantum dots using a light-driven ligand crosslinker, ethane-1,2-diyl bis(4-azido-2,3,5,6-tetrafluorobenzoate). The crosslinker with two azide end groups can interlock the ligands of neighbouring quantum dots upon exposure to UV, yielding chemically robust quantum dot films. Exploiting the light-driven crosslinking process, different colour CdSe-based core-shell quantum dots can be photo-patterned; quantum dot patterns of red, green and blue primary colours with a sub-pixel size of 4 μm × 16 μm, corresponding to a resolution of >1400 pixels per inch, are demonstrated. The process is non-destructive, such that photoluminescence and electroluminescence characteristics of quantum dot films are preserved after crosslinking. We demonstrate that red crosslinked quantum dot light-emitting diodes exhibiting an external quantum efficiency as high as 14.6% can be obtained.
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Affiliation(s)
- Jeehye Yang
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul, 04107, Republic of Korea
| | - Donghyo Hahm
- SKKU Advanced Institute of Nanotechnology (SAINT), School of Nano Science & Technology, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Kyunghwan Kim
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea
| | - Seunghyun Rhee
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea
| | - Myeongjae Lee
- Department of Chemistry, Korea University, Seoul, 02841, Republic of Korea
| | - Seunghan Kim
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul, 04107, Republic of Korea
| | - Jun Hyuk Chang
- SKKU Advanced Institute of Nanotechnology (SAINT), School of Nano Science & Technology, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Hye Won Park
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul, 04107, Republic of Korea
| | - Jaehoon Lim
- Department of Energy Science, Center for Artificial Atoms, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Minkyoung Lee
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul, 04107, Republic of Korea
| | - Hyeokjun Kim
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul, 04107, Republic of Korea
| | - Joohee Bang
- Pohang Accelerator Laboratory, POSTECH, Pohang, 37673, Republic of Korea
| | - Hyungju Ahn
- Pohang Accelerator Laboratory, POSTECH, Pohang, 37673, Republic of Korea
| | - Jeong Ho Cho
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul, 03722, Republic of Korea
| | - Jeonghun Kwak
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea
| | - BongSoo Kim
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Changhee Lee
- Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea
| | - Wan Ki Bae
- SKKU Advanced Institute of Nanotechnology (SAINT), School of Nano Science & Technology, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea.
| | - Moon Sung Kang
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul, 04107, Republic of Korea.
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Dieleman CD, Ding W, Wu L, Thakur N, Bespalov I, Daiber B, Ekinci Y, Castellanos S, Ehrler B. Universal direct patterning of colloidal quantum dots by (extreme) ultraviolet and electron beam lithography. NANOSCALE 2020; 12:11306-11316. [PMID: 32421115 DOI: 10.1039/d0nr01077d] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
Colloidal quantum dots have found many applications and patterning them on micro- and nanoscale would open a new dimension of tunability for the creation of smaller scale (flexible) electronics or nanophotonic structures. Here we present a simple, general, one-step top-down patterning technique for colloidal quantum dots by means of direct optical or electron beam lithography. We find that both photons and electrons can induce a solubility switch of both PbS and CdSe quantum dot films. The solubility switch can be ascribed to cross-linking of the organic ligands, which we observe from exposure with deep-UV photons (5.5 eV) to extreme-UV photons (91.9 eV), and low-energy (3-70 eV) as well as highly energetic electrons (50 keV). The required doses for patterning are relatively low and feature sizes can be as small as tens of nanometers. The luminescence properties as well as carrier lifetimes remain similar after patterning.
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Affiliation(s)
- Christian D Dieleman
- AMOLF, Center for Nanophotonics, Science Park 104, 1098XG Amsterdam, The Netherlands.
| | - Weiyi Ding
- AMOLF, Center for Nanophotonics, Science Park 104, 1098XG Amsterdam, The Netherlands.
| | - Lianjia Wu
- Advanced Research Center for Nanolithography, EUV Photoresists Group, Science Park 106, 1098 XG Amsterdam, The Netherlands.
| | - Neha Thakur
- Advanced Research Center for Nanolithography, EUV Photoresists Group, Science Park 106, 1098 XG Amsterdam, The Netherlands.
| | - Ivan Bespalov
- Advanced Research Center for Nanolithography, EUV Photoresists Group, Science Park 106, 1098 XG Amsterdam, The Netherlands.
| | - Benjamin Daiber
- AMOLF, Center for Nanophotonics, Science Park 104, 1098XG Amsterdam, The Netherlands.
| | - Yasin Ekinci
- Paul Scherrer Institute, Laboratory of Micro and Nanotechnology, Forschungsstrasse 111, 5232 Villigen, Switzerland
| | - Sonia Castellanos
- Advanced Research Center for Nanolithography, EUV Photoresists Group, Science Park 106, 1098 XG Amsterdam, The Netherlands.
| | - Bruno Ehrler
- AMOLF, Center for Nanophotonics, Science Park 104, 1098XG Amsterdam, The Netherlands.
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Devatha G, Roy P, Rao A, Roy S, Pillai PP. Multicolor Luminescent Patterning via Photoregulation of Electron and Energy Transfer Processes in Quantum Dots. J Phys Chem Lett 2020; 11:4099-4106. [PMID: 32357301 DOI: 10.1021/acs.jpclett.0c01121] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Ability to create high-contrast multicolor luminescent patterns is essential to realize the full potential of quantum dots (QDs) in display technologies. The idea of using a nonemissive state is adopted in the present work to enhance the color-contrast of QD-based photopatterns. This is achieved at a multicolor level by the photoregulation of electron and energy transfer processes in a single QD nanohybrid film, composed of one QD donor and two dye acceptors. The dominance of photoinduced electron transfer over the energy transfer process generates a nonluminescent QD nanohybrid film, which provides the black background for multicolor patterning. The superior photostability of QDs over dyes is used for the photoregulation of electron and energy transfer processes. Selective photodegradation of electron acceptor dye triggered the onset of the energy transfer process, thereby imparting a luminescent color to the QD nanohybrid film. Further, a controlled photoregulation of energy transfer process paved the way for multicolor patterning.
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Affiliation(s)
- Gayathri Devatha
- Department of Chemistry and Centre for Energy Sciences, Indian Institute of Science Education and Research (IISER), Dr. Homi Bhabha Road, Pashan, Pune 411 008, India
| | - Pradyut Roy
- Department of Chemistry and Centre for Energy Sciences, Indian Institute of Science Education and Research (IISER), Dr. Homi Bhabha Road, Pashan, Pune 411 008, India
| | - Anish Rao
- Department of Chemistry and Centre for Energy Sciences, Indian Institute of Science Education and Research (IISER), Dr. Homi Bhabha Road, Pashan, Pune 411 008, India
| | - Soumendu Roy
- Department of Chemistry and Centre for Energy Sciences, Indian Institute of Science Education and Research (IISER), Dr. Homi Bhabha Road, Pashan, Pune 411 008, India
| | - Pramod P Pillai
- Department of Chemistry and Centre for Energy Sciences, Indian Institute of Science Education and Research (IISER), Dr. Homi Bhabha Road, Pashan, Pune 411 008, India
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Lee S. Designing of low-cost, eco-friendly, and versatile photosensitive composites / inks based on carboxyl-terminated quantum dots and reactive prepolymers in a mixed solvent: Suppression of the coffee-ring strain and aggregation. POLYMER 2019. [DOI: 10.1016/j.polymer.2019.121839] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/25/2022]
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Kim S, Kim J, Kim D, Kim B, Chae H, Yi H, Hwang B. High-Performance Transparent Quantum Dot Light-Emitting Diode with Patchable Transparent Electrodes. ACS APPLIED MATERIALS & INTERFACES 2019; 11:26333-26338. [PMID: 31286764 DOI: 10.1021/acsami.9b05969] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Patchable electrodes are attractive for applications in optoelectronic devices because of their easy and reliable processability. However, development of reliable patchable transparent electrodes (TEs) with high optoelectronic performance is challenging; till now, optoelectronic devices fabricated with patchable TEs have been exhibiting limited performance. In this study, Ag nanowire (AgNW)/poly(methyl methacrylate) (PMMA) patchable TEs are developed and the highly efficient transparent quantum dot light-emitting diodes (QLEDs) using the patchable TEs are fabricated. AgNWs with optimized optoelectronic properties (figure of merit ≈ 3.3 × 10-2) are coated by an ultrathin PMMA nanolayer and transferred to thermal release tapes that enable physical attachment of TEs on the QLEDs without a significant damage to the adjacent active layer. The transparent QLEDs using patchable transparent top electrodes display excellent performance, with the maximum total luminance and current efficiency of 27 310 cd·m-2 and 45.99 cd·A-1, respectively. Fabricated by all-solution-based processes, these QLEDs exhibit the best performance to date among devices adopting patchable top electrodes.
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Affiliation(s)
- Sunho Kim
- Post-Silicon Semiconductor Institute , Korea Institute of Science and Technology , Seoul 02792 , Republic of Korea
| | | | | | - Bongsung Kim
- Nano-Convergence Mechanical Systems Research Division , Korea Institute of Machinery & Materials , Daejeon 34103 , Republic of Korea
| | | | - Hyunjung Yi
- Post-Silicon Semiconductor Institute , Korea Institute of Science and Technology , Seoul 02792 , Republic of Korea
| | - Byungil Hwang
- School of Integrative Engineering , Chung-Ang University , Seoul 06974 , Republic of Korea
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Dement DB, Quan MK, Ferry VE. Nanoscale Patterning of Colloidal Nanocrystal Films for Nanophotonic Applications Using Direct Write Electron Beam Lithography. ACS APPLIED MATERIALS & INTERFACES 2019; 11:14970-14979. [PMID: 30932468 DOI: 10.1021/acsami.9b01159] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The small size of colloidal nanocrystal quantum dots (QDs) leads to a variety of unique optical properties that are well-suited to nanophotonics, including bright, tunable photoluminescence (PL). However, exploring the properties of solid QD assemblies at the nanoscale has proven challenging because of the limitations in the nanoscale QD patterning methods. Generally, the precise placement of QD solids is difficult to achieve, especially for tall structures with multiple QD layers, and when it is achieved the patterns often cannot withstand the further processing steps required for final device construction. Direct electron beam lithography of QDs has emerged as a straightforward patterning process that does not require ligand exchange and results in structures that retain bright PL. Here, we demonstrate that direct patterning QD films on substrates treated with a self-assembled monolayer of octadecyltrichlorosilane allows us to create feature sizes as thin as 30 nm with heights of multiple layers and characterize the pattern resolution, robustness, and placement accuracy. These structures withstand sonication in a variety of solvents, and the structures are placed within 20 nm of their intended location nearly 100% of the time. We further show how this patterning method can be applied to nanophotonics by measuring the complex refractive index of the QD materials to model the absorption and scattering cross sections of QD structures of various sizes and shapes. These simulations reveal that edge effects arising from the finite shape of the QD nanostructure lead to substantial absorption enhancement when compared to an equivalent volume region taken from a continuous QD film. Finally, we explore more complex structures by patterning QD arrays, multilayer QD structures, and QD disks inside plasmonic resonators.
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Affiliation(s)
- Dana B Dement
- Department of Chemical Engineering and Materials Science , University of Minnesota , 421 Washington Avenue SE , Minneapolis , Minnesota 55455 , United States
| | - Matthew K Quan
- Department of Chemical Engineering and Materials Science , University of Minnesota , 421 Washington Avenue SE , Minneapolis , Minnesota 55455 , United States
| | - Vivian E Ferry
- Department of Chemical Engineering and Materials Science , University of Minnesota , 421 Washington Avenue SE , Minneapolis , Minnesota 55455 , United States
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Hung TY, Liu JAC, Lee WH, Li JR. Hierarchical Nanoparticle Assemblies Formed via One-Step Catalytic Stamp Pattern Transfer. ACS APPLIED MATERIALS & INTERFACES 2019; 11:4667-4677. [PMID: 30607942 DOI: 10.1021/acsami.8b19807] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The one-step catalytic stamp pattern transfer process is described for producing arrays of hierarchical nanoparticle assemblies. The method simply combines in situ nanoparticle synthesis triggered by free residual Si-H groups on PDMS stamps and the lift-off pattern transfer technique. No additional nanoparticle synthesis procedure is required before the pattern transfer process. Exquisitely uniform and precisely spaced hierarchical nanoparticle assemblies with designed geometry can be rapidly produced using the catalytic stamp pattern transfer process. Sequential catalytic stamp pattern transfer also is described to generate multilayered, hierarchical nanoparticle assemblies with various geometries. The hierarchical nanoparticle assemblies catalytically transferred onto the surface are not just nanoparticles but nanoparticle-polydimethylsiloxane residue composites. The in situ-synthesized nanoparticles retain optical properties. The hierarchical nanoparticle assemblies with precisely controlled geometry further show potential in the application of surface-enhanced Raman scattering. The capability of one-step catalytic stamp pattern transfer allows the scalable and reproducible fabrication of well-defined hierarchical nanoparticle assemblies.
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Affiliation(s)
- Tzu-Yi Hung
- Department of Chemistry , National Cheng Kung University , No. 1 College Road , Tainan 70101 , Taiwan
| | - Jessica An-Chieh Liu
- Department of Chemistry , National Cheng Kung University , No. 1 College Road , Tainan 70101 , Taiwan
| | - Wen-Hsiu Lee
- Department of Chemistry , National Cheng Kung University , No. 1 College Road , Tainan 70101 , Taiwan
| | - Jie-Ren Li
- Department of Chemistry , National Cheng Kung University , No. 1 College Road , Tainan 70101 , Taiwan
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