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Bao Y, Shao J, Xu H, Yan J, Jing PT, Xu J, Zhan D, Li B, Liu K, Liu L, Shen D. Making Patterned Single Defects in MoS 2 Thermally with the MoS 2/Au Moiré Interface. ACS NANO 2024; 18:27411-27419. [PMID: 39319775 DOI: 10.1021/acsnano.4c07212] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/26/2024]
Abstract
Normally, it is hard to regulate thermal defects precisely in their host lattice due to the stochastic nature of thermal activation. Here, we demonstrate a thermal annealing way to create patterned single sulfur vacancy (VS) defects in monolayer molybdenum disulfide (MoS2) with about 2 nm separations at subnanometer accuracy. Theoretically, we reveal that the S-Au interface coupling reduces the energy barriers in forming VS defects and that explains the overwhelming formation of interface VS defects. We also discover a phonon regulation mechanism by the moiré interface that effectively condenses the Γ-point out-of-plane acoustic phonons of monolayer MoS2 to its TOP moiré sites, which has been proposed to trigger moiré-patterned thermal VS formation. The high-throughput nanoscale patterned defects presented here may contribute to building scalable defect-based quantum systems.
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Affiliation(s)
- Yang Bao
- State Key Laboratory of Luminescence and Applications#, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun 130033, People's Republic of China
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - JingJing Shao
- State Key Laboratory of Luminescence and Applications#, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun 130033, People's Republic of China
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Hai Xu
- State Key Laboratory of Luminescence and Applications#, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun 130033, People's Republic of China
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Jiaxu Yan
- State Key Laboratory of Luminescence and Applications#, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun 130033, People's Republic of China
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Peng-Tao Jing
- State Key Laboratory of Luminescence and Applications#, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun 130033, People's Republic of China
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Jilian Xu
- State Key Laboratory of Luminescence and Applications#, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun 130033, People's Republic of China
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Da Zhan
- State Key Laboratory of Luminescence and Applications#, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun 130033, People's Republic of China
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Binghui Li
- State Key Laboratory of Luminescence and Applications#, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun 130033, People's Republic of China
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Kewei Liu
- State Key Laboratory of Luminescence and Applications#, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun 130033, People's Republic of China
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Lei Liu
- State Key Laboratory of Luminescence and Applications#, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun 130033, People's Republic of China
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Dezhen Shen
- State Key Laboratory of Luminescence and Applications#, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun 130033, People's Republic of China
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, P. R. China
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2
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Wu R, Zhang H, Ma H, Zhao B, Li W, Chen Y, Liu J, Liang J, Qin Q, Qi W, Chen L, Li J, Li B, Duan X. Synthesis, Modulation, and Application of Two-Dimensional TMD Heterostructures. Chem Rev 2024; 124:10112-10191. [PMID: 39189449 DOI: 10.1021/acs.chemrev.4c00174] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/28/2024]
Abstract
Two-dimensional (2D) transition metal dichalcogenide (TMD) heterostructures have attracted a lot of attention due to their rich material diversity and stack geometry, precise controllability of structure and properties, and potential practical applications. These heterostructures not only overcome the inherent limitations of individual materials but also enable the realization of new properties through appropriate combinations, establishing a platform to explore new physical and chemical properties at micro-nano-pico scales. In this review, we systematically summarize the latest research progress in the synthesis, modulation, and application of 2D TMD heterostructures. We first introduce the latest techniques for fabricating 2D TMD heterostructures, examining the rationale, mechanisms, advantages, and disadvantages of each strategy. Furthermore, we emphasize the importance of characteristic modulation in 2D TMD heterostructures and discuss some approaches to achieve novel functionalities. Then, we summarize the representative applications of 2D TMD heterostructures. Finally, we highlight the challenges and future perspectives in the synthesis and device fabrication of 2D TMD heterostructures and provide some feasible solutions.
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Affiliation(s)
- Ruixia Wu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Hongmei Zhang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Huifang Ma
- Innovation Center for Gallium Oxide Semiconductor (IC-GAO), National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- School of Flexible Electronics (Future Technologies) Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing 211816, China
| | - Bei Zhao
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing 211189, China
| | - Wei Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Yang Chen
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Jianteng Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Jingyi Liang
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Qiuyin Qin
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Weixu Qi
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Liang Chen
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Jia Li
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
| | - Bo Li
- Changsha Semiconductor Technology and Application Innovation Research Institute, School of Physics and Electronics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China
| | - Xidong Duan
- Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
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3
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Zhou J, Huang H, Zhao Z, Dou Z, Zhou L, Zhang T, Huang Z, Feng Y, Shi D, Liu N, Yang J, Nie JC, Wang Q, Dong J, Liu Y, Dou R, Xue Q. Homo-Site Nucleation Growth of Twisted Bilayer MoS 2 with Commensurate Angles. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2408227. [PMID: 39072861 DOI: 10.1002/adma.202408227] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/10/2024] [Indexed: 07/30/2024]
Abstract
Moiré superlattices, composed of two layers of transition metal dichalcogenides with a relative twist angle, provide a novel platform for exploring the correlated electronic phases and excitonic physics. Here, a gas-flow perturbation chemical vapor deposition (CVD) approach is demonstrated to directly grow MoS2 bilayer with versatile twist angles. It is found that the formation of twisted bilayer MoS2 homostructures sensitively depends on the gas-flow perturbation modes, correspondingly featuring the nucleation sites of the second layer at the same (homo-site) as or at the different (hetero-site) from that of the first layer. The commensurate twist angle of ≈22° in homo-site nucleation strategy accounts for ≈16% among the broad range of twist angles due to its low formation energy, which is in consistence with the theoretical calculation. More importantly, moiré interlayer excitons with the enhanced photoluminescence (PL) intensity and the prolonged lifetime are evidenced in the twisted bilayer MoS2 with a commensurate angle of 22°, which is owing to the reason that the strong moiré potential facilitates the interlayer excitons to be trapped in the moiré superlattices. The work provides a feasible route to controllably built twisted MoS2 homostructures with strong moiré potential to investigate the correlated physics in twistronics systems.
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Affiliation(s)
- Jun Zhou
- School of Physics and Astronomy, Beijing Normal University, Beijing, 100875, P. R. China
| | - Haojie Huang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Zihan Zhao
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, Beijing, 100875, P. R. China
| | - Zhenglong Dou
- Key Laboratory of Artificial Micro- and Nano-Structures of the Ministry of Education, Hubei Nuclear Solid Physics Key Laboratory, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Li Zhou
- Key Laboratory of Artificial Micro- and Nano-Structures of the Ministry of Education, Hubei Nuclear Solid Physics Key Laboratory, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Tiantian Zhang
- School of Physics and Astronomy, Beijing Normal University, Beijing, 100875, P. R. China
| | - Zhiheng Huang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Yibiao Feng
- School of Physics and Astronomy, Beijing Normal University, Beijing, 100875, P. R. China
| | - Dongxia Shi
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Nan Liu
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, Beijing, 100875, P. R. China
| | - Jian Yang
- School of Physics and Astronomy, Beijing Normal University, Beijing, 100875, P. R. China
| | - J C Nie
- School of Physics and Astronomy, Beijing Normal University, Beijing, 100875, P. R. China
| | - Ququan Wang
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Jichen Dong
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Ruifen Dou
- School of Physics and Astronomy, Beijing Normal University, Beijing, 100875, P. R. China
| | - Qikun Xue
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
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4
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Wu K, He W, Zhong H, Wu S, Zhou H, Yuan S, Zhang S, Xu H. Helicity-Resolved Vibrational Coupling in Twist WS 2/WSe 2 Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2024; 16:44186-44192. [PMID: 39109859 DOI: 10.1021/acsami.4c06488] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/23/2024]
Abstract
Helicity-resolved Raman spectra can provide an intricate view into lattice structural details. Through the analysis of peak positions, intensities, and circular polarized Raman signals, a wealth of information about chiral structure arrangement within the moiré superlattice, interlayer interaction strength, polarizability change in chemical bond, and beyond can be unveiled. However, the relationship between the circular polarization of high-frequency Raman and twist angle is still not clear. Here, we utilize helicity-resolved Raman spectroscopy to explore the interlayer interactions and the effect of the moiré superlattice in WS2/WSe2 heterostructures. For the out-of-plane Raman mode A1g of WS2 (A1g and 1E2g of WSe2), its intensity is significantly enhanced (suppressed) in WS2/WSe2 heterostructures when θ is less than 10° or greater than 50°. This observation could be attributed to the large polarizability changes in both W-S and W-Se covalent bonds. The circular polarization of 2LA(M) in WSe2 of the WS2/WSe2 heterostructure (θ < 10° or θ > 50°) is significantly enhanced compared to that of 2LA(M) in the monolayer WSe2. We deduce that the circular polarization of the Raman mode correlates with the proportion of high-symmetry area within a supercell of the moiré lattice. Our findings improve the understanding of twist-angle-modulated Raman modes in TMD heterostructures.
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Affiliation(s)
- Ke Wu
- School of Physics and Technology and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
- School of Sciences, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Wenyingdi He
- School of Physics and Technology and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
| | - Hongxia Zhong
- School of Mathematics and Physics, China University of Geosciences, Wuhan 430074, China
| | - Shutong Wu
- School of Sciences, Hangzhou Dianzi University, Hangzhou 310018, China
| | - Hongzhi Zhou
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, Zhejiang 311200, China
| | - Shengjun Yuan
- School of Physics and Technology and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
- Wuhan Institute of Quantum Technology, Wuhan 430206, China
| | - Shunping Zhang
- School of Physics and Technology and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
- Wuhan Institute of Quantum Technology, Wuhan 430206, China
| | - Hongxing Xu
- School of Physics and Technology and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
- School of Microelectronics, Wuhan University, Wuhan 430072, China
- Institute of Quantum Materials and Physics, Henan Academy of Sciences, Zhengzhou 450046, China
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5
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Cao MF, Peng XH, Zhao XJ, Bao YF, Xiao YH, Wu SS, Wang J, Lu Y, Wang M, Wang X, Lin KQ, Ren B. Ultralow-Frequency Tip-Enhanced Raman Scattering Discovers Nanoscale Radial Breathing Mode on Strained 2D Semiconductors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2405433. [PMID: 39007283 DOI: 10.1002/adma.202405433] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/16/2024] [Revised: 06/25/2024] [Indexed: 07/16/2024]
Abstract
Collective excitations including plasmons, magnons, and layer-breathing vibration modes emerge at an ultralow frequency (<1 THz) and are crucial for understanding van der Waals materials. Strain at the nanoscale can drastically change the property of van der Waals materials and create localized states like quantum emitters. However, it remains unclear how nanoscale strain changes collective excitations. Herein, ultralow-frequency tip-enhanced Raman spectroscopy (TERS) with sub-10 nm resolution under ambient conditions is developed to explore the localized collective excitation on monolayer semiconductors with nanoscale strains. A new vibrational mode is discovered at around 12 cm-1 (0.36 THz) on monolayer MoSe2 nanobubbles and it is identified as the radial breathing mode (RBM) of the curved monolayer. The correlation is determined between the RBM frequency and the strain by simultaneously performing deterministic nanoindentation and TERS measurement on monolayer MoSe2. The generality of the RBM in nanoscale curved monolayer WSe2 and bilayer MoSe2 is demonstrated. Using the RBM frequency, the strain of the monolayer MoSe2 on the nanoscale can be mapped. Such an ultralow-frequency vibration from curved van der Waals materials provides a new approach to study nanoscale strains and points to more localized collective excitations to be discovered at the nanoscale.
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Affiliation(s)
- Mao-Feng Cao
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
| | - Xiao-Hui Peng
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
| | - Xiao-Jiao Zhao
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
| | - Yi-Fan Bao
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
| | - Yuan-Hui Xiao
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
| | - Si-Si Wu
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
| | - Jun Wang
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
| | - Yao Lu
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
| | - Miao Wang
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
| | - Xiang Wang
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
- Innovation Laboratory for Sciences and Technologies of Energy Materials of Fujian Province, Xiamen, 361102, China
| | - Kai-Qiang Lin
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
- Innovation Laboratory for Sciences and Technologies of Energy Materials of Fujian Province, Xiamen, 361102, China
| | - Bin Ren
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
- Innovation Laboratory for Sciences and Technologies of Energy Materials of Fujian Province, Xiamen, 361102, China
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6
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Blaga C, Labordet Álvarez Á, Balgarkashi A, Banerjee M, Fontcuberta I Morral A, Dimitrievska M. Unveiling the complex phonon nature and phonon cascades in 1L to 5L WSe 2 using multiwavelength excitation Raman scattering. NANOSCALE ADVANCES 2024:d4na00399c. [PMID: 39157051 PMCID: PMC11325308 DOI: 10.1039/d4na00399c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/13/2024] [Accepted: 07/29/2024] [Indexed: 08/20/2024]
Abstract
Tungsten diselenide (WSe2) is a 2D semiconducting material, promising for novel optoelectronic and phononic applications. WSe2 has complex lattice dynamics and phonon structure. Numerous discrepancies in the literature exist regarding the interpretation and identification of phonon modes. This work presents a complete investigation of the vibrational properties of 1L to 5L flakes and bulk WSe2 using multi-wavelength Raman spectroscopy. We especially highlight measurements using 785 nm excitation, which have not been performed before. These allow us to solve inconsistences in the literature in terms of defect-activated non-Γ point single phonon modes and Breit-Wigner-Fano type resonance. We identify 35 Raman peaks per flake thickness, which we attribute to either one-phonon or multi-phonon modes, including two-phonon scattering due to a van Hove singularity (vHs). The measurements are in excellent agreement with the theoretical predictions. Using photoluminescence measurements, we identify photon-exciton coupling leading to resonant Raman scattering, suggesting wavelength laser excitations best suited for further investigations of specific WSe2 flake thicknesses. Finally, we report the observation of phonon-cascades for all WSe2 flake thicknesses, indicating strong phonon-electron interactions during early carrier relaxation processes in WSe2. This research provides a solid foundation and reference for future investigations of the vibrational properties of WSe2, paving the way for further development of this material towards applications.
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Affiliation(s)
- Claire Blaga
- Laboratory of Semiconductor Materials, Institute of Materials, School of Engineering, École Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland
| | - Ángel Labordet Álvarez
- Nanomaterials Spectroscopy and Imaging Group, Transport at Nanoscale Interfaces Laboratory, Swiss Federal Laboratories for Material Science and Technology (EMPA) Ueberlandstrasse 129 8600 Duebendorf Switzerland
| | - Akshay Balgarkashi
- Laboratory of Semiconductor Materials, Institute of Materials, School of Engineering, École Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland
| | - Mitali Banerjee
- Laboratory of Quantum Physics, Topology and Correlations, Institute of Physics, School of Basic Sciences, Ecole Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland
| | - Anna Fontcuberta I Morral
- Laboratory of Semiconductor Materials, Institute of Materials, School of Engineering, École Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland
- Institute of Physics, School of Basic Sciences, Ecole Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland
| | - Mirjana Dimitrievska
- Laboratory of Semiconductor Materials, Institute of Materials, School of Engineering, École Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland
- Nanomaterials Spectroscopy and Imaging Group, Transport at Nanoscale Interfaces Laboratory, Swiss Federal Laboratories for Material Science and Technology (EMPA) Ueberlandstrasse 129 8600 Duebendorf Switzerland
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7
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Song G, Hao H, Yan S, Fang S, Xu W, Tong L, Zhang J. Observation of Chirality Transfer in Twisted Few-Layer Graphene. ACS NANO 2024; 18:17578-17585. [PMID: 38919006 DOI: 10.1021/acsnano.4c01934] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/27/2024]
Abstract
Chiral materials are the focus of research in a variety of fields such as chiroptical sensing, biosensing, catalysis, and spintronics. Twisted two-dimensional (2D) materials are rapidly developing into a class of atomically thin chiral materials that can be effectively modulated through interlayer twist. However, chirality transfer in chiral 2D materials has not been reported. Here, we show that the chirality from the twist interface of graphene can directly transfer to achiral few-layer graphene and lead to a strong chiroptical response probed with circularly polarized Raman spectroscopy. Distinct Raman optical activity (ROA) for the interlayer shear modes in achiral few-layer graphene is observed, with the degree of polarization reaching as high as 0.5. These findings demonstrate the programmability of chiroptical response through stacking and twist engineering in 2D materials and offer insights into the transfer of chirality in atomically thin chiral materials for optical and electronic applications.
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Affiliation(s)
- Ge Song
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - He Hao
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Shuowen Yan
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Susu Fang
- Key Laboratory of Mesoscopic Chemistry, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China
| | - Weigao Xu
- Key Laboratory of Mesoscopic Chemistry, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China
| | - Lianming Tong
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Jin Zhang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
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8
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Xie X, Ding J, Wu B, Li S, Chen J, He J, Liu Z, Wang JT, Liu Y. Anomalous Phonon Behavior and Tunable Exciton Emissions: Insights into Pressure-Driven Dynamics in Silicon Phosphide. NANO LETTERS 2024; 24:8189-8197. [PMID: 38904278 DOI: 10.1021/acs.nanolett.4c02250] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/22/2024]
Abstract
IV-V two-dimensional materials have emerged as key contenders for polarization-sensitive and angle-resolved devices, given their inherent anisotropic physical properties. While these materials exhibit intriguing high-pressure quasi-particle behavior and phase transition, the evolution of quasi-particles and their interactions under external pressure remain elusive. Here, employing a diamond anvil cell and spectroscopic measurements coupled with first-principles calculations, we unveil rarely observed pressure-induced phonon-phonon coupling in layered SiP flakes. This coupling manifests as an anomalous phonon hardening behavior for the A1 mode within a broad wavenumber phonon softening region. Furthermore, we demonstrate the effective tuning of exciton emissions in SiP flakes under pressure, revealing a remarkable 63% enhancement in the degree of polarization (DOP) within the pressure range of 0-3.5 GPa. These findings contribute to our understanding of high-pressure phonon evolution in SiP materials and offer a strategic approach to manipulate the anisotropic performance of in-plane anisotropic 2D materials.
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Affiliation(s)
- Xing Xie
- Institute of Quantum Physics, School of Physics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
- State Key Laboratory of Precision Manufacturing for Extreme Service Performance, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Junnan Ding
- Institute of Quantum Physics, School of Physics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
- State Key Laboratory of Precision Manufacturing for Extreme Service Performance, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Biao Wu
- Institute of Quantum Physics, School of Physics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
- State Key Laboratory of Precision Manufacturing for Extreme Service Performance, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Shaofei Li
- Institute of Quantum Physics, School of Physics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Junying Chen
- Institute of Quantum Physics, School of Physics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
- State Key Laboratory of Precision Manufacturing for Extreme Service Performance, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Jun He
- Institute of Quantum Physics, School of Physics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Zongwen Liu
- School of Chemical and Biomolecular Engineering, The University of Sydney, Sydney, NSW 2006, Australia
- The University of Sydney Nano Institute, The University of Sydney, Sydney, NSW 2006, Australia
| | - Jian-Tao Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People's Republic of China
| | - Yanping Liu
- Institute of Quantum Physics, School of Physics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
- State Key Laboratory of Precision Manufacturing for Extreme Service Performance, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
- Shenzhen Research Institute of Central South University, Shenzhen 518000, People's Republic of China
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9
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Klein B, Liang L, Meunier V. Low-frequency Raman active modes of twisted bilayer MoS 2. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:365301. [PMID: 38788746 DOI: 10.1088/1361-648x/ad5093] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2024] [Accepted: 05/24/2024] [Indexed: 05/26/2024]
Abstract
We study the low-frequency Raman active modes of twisted bilayer MoS2for several twist angles using a force-field approach and a parametrized bond polarizability model. We show that twist angles near high-symmetry stacking configurations exhibit stacking frustration that leads to significant buckling of the moiré superlattice. We find that atomic relaxation due to the twist is of prime importance. The periodic displacement of the Mo atoms shows the realization of a soliton network, and in turn, leads to the emergence of a number of frequency modes not seen in the high-symmetry stacking systems. Some of the modes are only seen in theXZRaman polarization setup while others are seen in theXYsetup. The symmetry of the normal modes, and how this affects the Raman tensors is examined in detail.
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Affiliation(s)
- Brandon Klein
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY 12180, United States of America
- Department of Physics and Astronomy, Johns Hopkins University, Baltimore, MD 21218, United States of America
| | - Liangbo Liang
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, United States of America
| | - Vincent Meunier
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY 12180, United States of America
- Department of Engineering Science and Mechanics, The University of Pennsylvania, University Park, PA, 16802, United States of America
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10
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Liu Y, Dai F, Bai H, Fan X, Wang R, Zheng X, Xiong Z, Sun H, Liang Z, Kang Z, Zhang Y. Exciton Localization Modulated by Ultradeep Moiré Potential in Twisted Bilayer γ-Graphdiyne. J Am Chem Soc 2024; 146:14593-14599. [PMID: 38718194 DOI: 10.1021/jacs.4c01359] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/30/2024]
Abstract
Twisted moiré superlattice is featured with its moiré potential energy, the depth of which renders an effective approach to strengthening the exciton-exciton interaction and exciton localization toward high-performance quantum photonic devices. However, it remains as a long-standing challenge to further push the limit of moiré potential depth. Herein, owing to the pz orbital induced band edge states enabled by the unique sp-C in bilayer γ-graphdiyne (GDY), an ultradeep moiré potential of ∼289 meV is yielded. After being twisted into the hole-to-hole layer stacking configuration, the interlayer coupling is substantially intensified to augment the lattice potential of bilayer GDY up to 475%. The presence of lateral constrained moiré potential shifts the spatial distribution of electrons and holes in excitons from the regular alternating mode to their respective separated and localized mode. According to the well-established wave function distribution of electrons contained in excitons, the AA-stacked site is identified to serve for exciton localization. This work extends the materials systems available for moiré superlattice design further to serial carbon allotropes featured with benzene ring-alkyne chain coupling, unlocking tremendous potential for twistronic-based quantum device applications.
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Affiliation(s)
- Yingcong Liu
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Key Laboratory for Advanced Energy Materials and Technologies, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Fulong Dai
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Key Laboratory for Advanced Energy Materials and Technologies, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Haokun Bai
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Key Laboratory for Advanced Energy Materials and Technologies, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Xiayue Fan
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Key Laboratory for Advanced Energy Materials and Technologies, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Ruiqi Wang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Key Laboratory for Advanced Energy Materials and Technologies, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Xuzhi Zheng
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Key Laboratory for Advanced Energy Materials and Technologies, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Zhaozhao Xiong
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Key Laboratory for Advanced Energy Materials and Technologies, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Haochun Sun
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Key Laboratory for Advanced Energy Materials and Technologies, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Zhuojian Liang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Key Laboratory for Advanced Energy Materials and Technologies, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Zhuo Kang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Key Laboratory for Advanced Energy Materials and Technologies, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Yue Zhang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Key Laboratory for Advanced Energy Materials and Technologies, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
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11
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Heo YS, Kim TW, Lee W, Choi J, Park S, Yeom DI, Lee JU. Mesoscopic Stacking Reconfigurations in Stacked van der Waals Film. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2306296. [PMID: 38072812 DOI: 10.1002/smll.202306296] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/25/2023] [Revised: 11/29/2023] [Indexed: 05/25/2024]
Abstract
Mesoscopic-scale stacking reconfigurations are investigated when van der Waals (vdW) films are stacked. A method to visualize complicated stacking structures and mechanical distortions simultaneously in stacked atom-thick films using Raman spectroscopy is developed. In the rigid limit, it is found that the distortions originate from the transfer process, which can be understood through thin film mechanics with a large elastic property mismatch. In contrast, with atomic corrugations, the in-plane strain fields are more closely correlated with the stacking configuration, highlighting the impact of atomic reconstructions on the mesoscopic scale. It is discovered that the grain boundaries do not have a significant effect while the cracks are causing inhomogeneous strain in stacked polycrystalline films. This result contributes to understanding the local variation of emerging properties from moiré structures and advancing the reliability of stacked vdW material fabrication.
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Affiliation(s)
- Yoon Seong Heo
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, 16499, South Korea
| | - Tae Wan Kim
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, 16499, South Korea
| | - Wooseok Lee
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, 16499, South Korea
| | - Jungseok Choi
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, 16499, South Korea
| | - Soyeon Park
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, 16499, South Korea
| | - Dong-Il Yeom
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, 16499, South Korea
| | - Jae-Ung Lee
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon, 16499, South Korea
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12
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Cheng Y, Tang WQ, Geng LT, Xu M, Zhu JP, Meng SS, Gu ZY. Polar alcohol guest molecules regulate the stacking modes of 2-D MOF nanosheets. Chem Sci 2024; 15:4106-4113. [PMID: 38487231 PMCID: PMC10935662 DOI: 10.1039/d3sc06844g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/20/2023] [Accepted: 02/07/2024] [Indexed: 03/17/2024] Open
Abstract
The modulation of two-dimensional metal-organic framework (2-D MOF) nanosheet stacking is an effective means to improve the properties and promote the application of nanosheets in various fields. Here, we employed a series of alcohol guest molecules (MeOH, EtOH and PrOH) to modulate Zr-BTB (BTB = benzene-1,3,5-tribenzoate) nanosheets and to generate untwisted stacking. The distribution of stacking angles was statistically analyzed from high-angle annular dark-field (HAADF) and fast Fourier transform (FFT) images. The ratios of untwisted stacking were calculated, such as 77.01% untwisted stacking for MeOH, 83.45% for EtOH, and 85.61% for PrOH. The obtained untwisted Zr-BTB showed good separation abilities for different substituted benzene isomers, superior para selectivity and excellent column stability and reusability. Control experiments of 2-D Zr-TCA (TCA = 4,4',4''-tricarboxytriphenylamine) and Zr-TATB (TATB = 4,4',4''-(1,3,5-triazine-2,4,6-triyl)tribenzoic acid) nanosheets with similar pore sizes and stronger polarity regulated by the alcohol guests exhibited moderate separation performance. The electron microscopy images revealed that polar alcohol regulation dominantly generated the twisted stacking of Zr-TCA and Zr-TATB with various Moiré patterns. Polar guest molecules, such as alcohols, provide strong host-guest interactions during the regulation of MOF nanosheet stacking, providing an opportunity to design new porous Moiré materials with application prospects.
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Affiliation(s)
- Yue Cheng
- Jiangsu Key Laboratory of Biofunctional Materials, Jiangsu Collaborative Innovation Center of Biomedical Functional Materials, Jiangsu Key Laboratory of New Power Batteries, School of Chemistry and Materials Science, Nanjing Normal University Nanjing 210023 China
| | - Wen-Qi Tang
- Jiangsu Key Laboratory of Biofunctional Materials, Jiangsu Collaborative Innovation Center of Biomedical Functional Materials, Jiangsu Key Laboratory of New Power Batteries, School of Chemistry and Materials Science, Nanjing Normal University Nanjing 210023 China
| | - Lu-Ting Geng
- Jiangsu Key Laboratory of Biofunctional Materials, Jiangsu Collaborative Innovation Center of Biomedical Functional Materials, Jiangsu Key Laboratory of New Power Batteries, School of Chemistry and Materials Science, Nanjing Normal University Nanjing 210023 China
| | - Ming Xu
- Jiangsu Key Laboratory of Biofunctional Materials, Jiangsu Collaborative Innovation Center of Biomedical Functional Materials, Jiangsu Key Laboratory of New Power Batteries, School of Chemistry and Materials Science, Nanjing Normal University Nanjing 210023 China
| | - Jian-Ping Zhu
- Jiangsu Key Laboratory of Biofunctional Materials, Jiangsu Collaborative Innovation Center of Biomedical Functional Materials, Jiangsu Key Laboratory of New Power Batteries, School of Chemistry and Materials Science, Nanjing Normal University Nanjing 210023 China
| | - Sha-Sha Meng
- Jiangsu Key Laboratory of Biofunctional Materials, Jiangsu Collaborative Innovation Center of Biomedical Functional Materials, Jiangsu Key Laboratory of New Power Batteries, School of Chemistry and Materials Science, Nanjing Normal University Nanjing 210023 China
| | - Zhi-Yuan Gu
- Jiangsu Key Laboratory of Biofunctional Materials, Jiangsu Collaborative Innovation Center of Biomedical Functional Materials, Jiangsu Key Laboratory of New Power Batteries, School of Chemistry and Materials Science, Nanjing Normal University Nanjing 210023 China
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13
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Wasem Klein F, Huntzinger JR, Astié V, Voiry D, Parret R, Makhlouf H, Juillaguet S, Decams JM, Contreras S, Landois P, Zahab AA, Sauvajol JL, Paillet M. Determining by Raman spectroscopy the average thickness and N-layer-specific surface coverages of MoS 2 thin films with domains much smaller than the laser spot size. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2024; 15:279-296. [PMID: 38476324 PMCID: PMC10928926 DOI: 10.3762/bjnano.15.26] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/13/2023] [Accepted: 02/20/2024] [Indexed: 03/14/2024]
Abstract
Raman spectroscopy is a widely used technique to characterize nanomaterials because of its convenience, non-destructiveness, and sensitivity to materials change. The primary purpose of this work is to determine via Raman spectroscopy the average thickness of MoS2 thin films synthesized by direct liquid injection pulsed-pressure chemical vapor deposition (DLI-PP-CVD). Such samples are constituted of nanoflakes (with a lateral size of typically 50 nm, i.e., well below the laser spot size), with possibly a distribution of thicknesses and twist angles between stacked layers. As an essential preliminary, we first reassess the applicability of different Raman criteria to determine the thicknesses (or layer number, N) of MoS2 flakes from measurements performed on reference samples, namely well-characterized mechanically exfoliated or standard chemical vapor deposition MoS2 large flakes deposited on 90 ± 6 nm SiO2 on Si substrates. Then, we discuss the applicability of the same criteria for significantly different DLI-PP-CVD MoS2 samples with average thicknesses ranging from sub-monolayer up to three layers. Finally, an original procedure based on the measurement of the intensity of the layer breathing modes is proposed to evaluate the surface coverage for each N (i.e., the ratio between the surface covered by exactly N layers and the total surface) in DLI-PP-CVD MoS2 samples.
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Affiliation(s)
- Felipe Wasem Klein
- Laboratoire Charles Coulomb, Université de Montpellier, CNRS, F-34095, Montpellier, France
| | - Jean-Roch Huntzinger
- Laboratoire Charles Coulomb, Université de Montpellier, CNRS, F-34095, Montpellier, France
| | - Vincent Astié
- Annealsys, 139 Rue des Walkyries, 34000 Montpellier, France
| | - Damien Voiry
- Institut Européen des Membranes, IEM, UMR 5635, Université Montpellier, ENSCM, CNRS, Montpellier, France
| | - Romain Parret
- Aix Marseille Université, CNRS, CINAM, UMR 7325, Campus de Luminy, 13288, Marseille, France
| | - Houssine Makhlouf
- Laboratoire Charles Coulomb, Université de Montpellier, CNRS, F-34095, Montpellier, France
| | - Sandrine Juillaguet
- Laboratoire Charles Coulomb, Université de Montpellier, CNRS, F-34095, Montpellier, France
| | | | - Sylvie Contreras
- Laboratoire Charles Coulomb, Université de Montpellier, CNRS, F-34095, Montpellier, France
| | - Périne Landois
- Laboratoire Charles Coulomb, Université de Montpellier, CNRS, F-34095, Montpellier, France
| | - Ahmed-Azmi Zahab
- Laboratoire Charles Coulomb, Université de Montpellier, CNRS, F-34095, Montpellier, France
| | - Jean-Louis Sauvajol
- Laboratoire Charles Coulomb, Université de Montpellier, CNRS, F-34095, Montpellier, France
| | - Matthieu Paillet
- Laboratoire Charles Coulomb, Université de Montpellier, CNRS, F-34095, Montpellier, France
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14
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Yang H, Hu R, Wu H, He X, Zhou Y, Xue Y, He K, Hu W, Chen H, Gong M, Zhang X, Tan PH, Hernández ER, Xie Y. Identification and Structural Characterization of Twisted Atomically Thin Bilayer Materials by Deep Learning. NANO LETTERS 2024; 24:2789-2797. [PMID: 38407030 PMCID: PMC10921996 DOI: 10.1021/acs.nanolett.3c04815] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/07/2023] [Revised: 02/19/2024] [Accepted: 02/20/2024] [Indexed: 02/27/2024]
Abstract
Two-dimensional materials are expected to play an important role in next-generation electronics and optoelectronic devices. Recently, twisted bilayer graphene and transition metal dichalcogenides have attracted significant attention due to their unique physical properties and potential applications. In this study, we describe the use of optical microscopy to collect the color space of chemical vapor deposition (CVD) of molybdenum disulfide (MoS2) and the application of a semantic segmentation convolutional neural network (CNN) to accurately and rapidly identify thicknesses of MoS2 flakes. A second CNN model is trained to provide precise predictions on the twist angle of CVD-grown bilayer flakes. This model harnessed a data set comprising over 10,000 synthetic images, encompassing geometries spanning from hexagonal to triangular shapes. Subsequent validation of the deep learning predictions on twist angles was executed through the second harmonic generation and Raman spectroscopy. Our results introduce a scalable methodology for automated inspection of twisted atomically thin CVD-grown bilayers.
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Affiliation(s)
- Haitao Yang
- Key
Laboratory of Wide Band-Gap Semiconductor Technology & Shaanxi
Key Laboratory of High-Orbits-Electron Materials and Protection Technology
for Aerospace, School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China
| | - Ruiqi Hu
- Department
of Materials Science and Engineering, University
of Delaware, Newark, Delaware 19716, United States
| | - Heng Wu
- State
Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Xiaolong He
- Key
Laboratory of Wide Band-Gap Semiconductor Technology & Shaanxi
Key Laboratory of High-Orbits-Electron Materials and Protection Technology
for Aerospace, School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China
| | - Yan Zhou
- State
Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Phonon
Engineering Research Center of Jiangsu Province, School of Physics
and Technology, Nanjing Normal University, Nanjing 210023, China
| | - Yizhe Xue
- Key
Laboratory of Wide Band-Gap Semiconductor Technology & Shaanxi
Key Laboratory of High-Orbits-Electron Materials and Protection Technology
for Aerospace, School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China
| | - Kexin He
- Key
Laboratory of Wide Band-Gap Semiconductor Technology & Shaanxi
Key Laboratory of High-Orbits-Electron Materials and Protection Technology
for Aerospace, School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China
| | - Wenshuai Hu
- Key
Laboratory of Wide Band-Gap Semiconductor Technology & Shaanxi
Key Laboratory of High-Orbits-Electron Materials and Protection Technology
for Aerospace, School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China
| | - Haosen Chen
- Key
Laboratory of Wide Band-Gap Semiconductor Technology & Shaanxi
Key Laboratory of High-Orbits-Electron Materials and Protection Technology
for Aerospace, School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China
| | - Mingming Gong
- School
of Materials Science and Engineering, Northwestern
Polytechnical University, Xi’an 710072, China
| | - Xin Zhang
- State
Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Ping-Heng Tan
- State
Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | | | - Yong Xie
- Key
Laboratory of Wide Band-Gap Semiconductor Technology & Shaanxi
Key Laboratory of High-Orbits-Electron Materials and Protection Technology
for Aerospace, School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China
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15
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Sun X, Suriyage M, Khan AR, Gao M, Zhao J, Liu B, Hasan MM, Rahman S, Chen RS, Lam PK, Lu Y. Twisted van der Waals Quantum Materials: Fundamentals, Tunability, and Applications. Chem Rev 2024; 124:1992-2079. [PMID: 38335114 DOI: 10.1021/acs.chemrev.3c00627] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/12/2024]
Abstract
Twisted van der Waals (vdW) quantum materials have emerged as a rapidly developing field of two-dimensional (2D) semiconductors. These materials establish a new central research area and provide a promising platform for studying quantum phenomena and investigating the engineering of novel optoelectronic properties such as single photon emission, nonlinear optical response, magnon physics, and topological superconductivity. These captivating electronic and optical properties result from, and can be tailored by, the interlayer coupling using moiré patterns formed by vertically stacking atomic layers with controlled angle misorientation or lattice mismatch. Their outstanding properties and the high degree of tunability position them as compelling building blocks for both compact quantum-enabled devices and classical optoelectronics. This paper offers a comprehensive review of recent advancements in the understanding and manipulation of twisted van der Waals structures and presents a survey of the state-of-the-art research on moiré superlattices, encompassing interdisciplinary interests. It delves into fundamental theories, synthesis and fabrication, and visualization techniques, and the wide range of novel physical phenomena exhibited by these structures, with a focus on their potential for practical device integration in applications ranging from quantum information to biosensors, and including classical optoelectronics such as modulators, light emitting diodes, lasers, and photodetectors. It highlights the unique ability of moiré superlattices to connect multiple disciplines, covering chemistry, electronics, optics, photonics, magnetism, topological and quantum physics. This comprehensive review provides a valuable resource for researchers interested in moiré superlattices, shedding light on their fundamental characteristics and their potential for transformative applications in various fields.
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Affiliation(s)
- Xueqian Sun
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Manuka Suriyage
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Ahmed Raza Khan
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Department of Industrial and Manufacturing Engineering, University of Engineering and Technology (Rachna College Campus), Gujranwala, Lahore 54700, Pakistan
| | - Mingyuan Gao
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- College of Engineering and Technology, Southwest University, Chongqing 400716, China
| | - Jie Zhao
- Department of Quantum Science & Technology, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Boqing Liu
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Md Mehedi Hasan
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Sharidya Rahman
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
- ARC Centre of Excellence in Exciton Science, Monash University, Clayton, Victoria 3800, Australia
| | - Ruo-Si Chen
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Ping Koy Lam
- Department of Quantum Science & Technology, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Yuerui Lu
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
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16
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Fox C, Mao Y, Zhang X, Wang Y, Xiao J. Stacking Order Engineering of Two-Dimensional Materials and Device Applications. Chem Rev 2024; 124:1862-1898. [PMID: 38150266 DOI: 10.1021/acs.chemrev.3c00618] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Stacking orders in 2D van der Waals (vdW) materials dictate the relative sliding (lateral displacement) and twisting (rotation) between atomically thin layers. By altering the stacking order, many new ferroic, strongly correlated and topological orderings emerge with exotic electrical, optical and magnetic properties. Thanks to the weak vdW interlayer bonding, such highly flexible and energy-efficient stacking order engineering has transformed the design of quantum properties in 2D vdW materials, unleashing the potential for miniaturized high-performance device applications in electronics, spintronics, photonics, and surface chemistry. This Review provides a comprehensive overview of stacking order engineering in 2D vdW materials and their device applications, ranging from the typical fabrication and characterization methods to the novel physical properties and the emergent slidetronics and twistronics device prototyping. The main emphasis is on the critical role of stacking orders affecting the interlayer charge transfer, orbital coupling and flat band formation for the design of innovative materials with on-demand quantum properties and surface potentials. By demonstrating a correlation between the stacking configurations and device functionality, we highlight their implications for next-generation electronic, photonic and chemical energy conversion devices. We conclude with our perspective of this exciting field including challenges and opportunities for future stacking order engineering research.
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Affiliation(s)
- Carter Fox
- Department of Materials Science and Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
- Department of Physics, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
| | - Yulu Mao
- Department of Electrical and Computer Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
| | - Xiang Zhang
- Faculty of Science, University of Hong Kong, Hong Kong, China
- Faculty of Engineering, University of Hong Kong, Hong Kong, China
| | - Ying Wang
- Department of Materials Science and Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
- Department of Physics, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
- Department of Electrical and Computer Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
| | - Jun Xiao
- Department of Materials Science and Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
- Department of Physics, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
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17
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Mehew JD, Merino RL, Ishizuka H, Block A, Mérida JD, Carlón AD, Watanabe K, Taniguchi T, Levitov LS, Efetov DK, Tielrooij KJ. Ultrafast Umklapp-assisted electron-phonon cooling in magic-angle twisted bilayer graphene. SCIENCE ADVANCES 2024; 10:eadj1361. [PMID: 38335282 PMCID: PMC10857426 DOI: 10.1126/sciadv.adj1361] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/08/2023] [Accepted: 01/11/2024] [Indexed: 02/12/2024]
Abstract
Understanding electron-phonon interactions is fundamentally important and has crucial implications for device applications. However, in twisted bilayer graphene near the magic angle, this understanding is currently lacking. Here, we study electron-phonon coupling using time- and frequency-resolved photovoltage measurements as direct and complementary probes of phonon-mediated hot-electron cooling. We find a remarkable speedup in cooling of twisted bilayer graphene near the magic angle: The cooling time is a few picoseconds from room temperature down to 5 kelvin, whereas in pristine bilayer graphene, cooling to phonons becomes much slower for lower temperatures. Our experimental and theoretical analysis indicates that this ultrafast cooling is a combined effect of superlattice formation with low-energy moiré phonons, spatially compressed electronic Wannier orbitals, and a reduced superlattice Brillouin zone. This enables efficient electron-phonon Umklapp scattering that overcomes electron-phonon momentum mismatch. These results establish twist angle as an effective way to control energy relaxation and electronic heat flow.
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Affiliation(s)
- Jake Dudley Mehew
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), BIST and CSIC, Campus UAB, 08193 Bellaterra (Barcelona), Spain
| | - Rafael Luque Merino
- ICFO - Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology (BIST), Castelldefels 08860, Spain
- Fakultät für Physik, Ludwig-Maximilians-Universität, Schellingstrasse 4, München 80799, Germany
- Munich Center for Quantum Science and Technology (MCQST), München, Germany
| | - Hiroaki Ishizuka
- Department of Physics, Tokyo Institute of Technology, Tokyo, Japan
| | - Alexander Block
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), BIST and CSIC, Campus UAB, 08193 Bellaterra (Barcelona), Spain
| | - Jaime Díez Mérida
- ICFO - Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology (BIST), Castelldefels 08860, Spain
- Fakultät für Physik, Ludwig-Maximilians-Universität, Schellingstrasse 4, München 80799, Germany
- Munich Center for Quantum Science and Technology (MCQST), München, Germany
| | - Andrés Díez Carlón
- ICFO - Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology (BIST), Castelldefels 08860, Spain
- Fakultät für Physik, Ludwig-Maximilians-Universität, Schellingstrasse 4, München 80799, Germany
- Munich Center for Quantum Science and Technology (MCQST), München, Germany
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Material Sciences, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Material Sciences, Tsukuba, Japan
| | - Leonid S. Levitov
- Department of Physics, Massachusetts Institute of Technology, Cambridge, 02139 MA, USA
| | - Dmitri K. Efetov
- Fakultät für Physik, Ludwig-Maximilians-Universität, Schellingstrasse 4, München 80799, Germany
- Munich Center for Quantum Science and Technology (MCQST), München, Germany
| | - Klaas-Jan Tielrooij
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), BIST and CSIC, Campus UAB, 08193 Bellaterra (Barcelona), Spain
- Department of Applied Physics, TU Eindhoven, Den Dolech 2, Eindhoven 5612 AZ, Netherlands
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18
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Boora M, Lin YC, Chen C, Trainor N, Robinson JA, Redwing JM, Suh JY. Low-Frequency Raman Study of Large-Area Twisted Bilayers of WS 2 Stacked by an Etchant-Free Transfer Method. ACS APPLIED MATERIALS & INTERFACES 2024; 16:2902-2911. [PMID: 38166373 DOI: 10.1021/acsami.3c14708] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/04/2024]
Abstract
Monolayer transition metal dichalcogenides have strong intracovalent bonding. When stacked in multilayers, however, weak van der Waals interactions dominate interlayer mechanical coupling and, thus, influence their lattice vibrations. This study presents the frequency evolution of interlayer phonons in twisted WS2 bilayers, highly subject to the twist angle. The twist angle between the layers is controlled to modulate the spacing between the layers, which, in turn, affects the interlayer coupling that is probed by Raman spectroscopy. The shifts of high-frequency E2g1 (Γ) and A1g (Γ) phonon modes and their frequency separations are dependent on the twist angle, reflecting the correlation between the interlayer mechanical coupling and twist angle. In this work, we fabricated large-area, twisted bilayer WS2 with a clean interface with controlled twist angles. Polarized Raman spectroscopy identified new interlayer modes, which were not previously reported, depending on the twist angle. The appearance of breathing modes in Raman phonon spectra provides evidence of strong interlayer coupling in bilayer structures. We confirm that the twist angle can alter the exciton and trion dynamics of bilayers as indicated by the photoluminescence peak shift. These large-area controlled twist angle samples have practical applications in optoelectronic device fabrication and twistronics.
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Affiliation(s)
- Manpreet Boora
- Department of Physics, Michigan Technological University, Houghton, Michigan 49931, United States
| | - Yu-Chuan Lin
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu City 300093, Taiwan
| | - Chen Chen
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Nicholas Trainor
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Joshua A Robinson
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium Materials Innovation Platform, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Chemistry and Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Joan M Redwing
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- 2D Crystal Consortium Materials Innovation Platform, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Jae Yong Suh
- Department of Physics, Michigan Technological University, Houghton, Michigan 49931, United States
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19
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Jiang W, Sofer R, Gao X, Tkatchenko A, Kronik L, Ouyang W, Urbakh M, Hod O. Anisotropic Interlayer Force Field for Group-VI Transition Metal Dichalcogenides. J Phys Chem A 2023; 127:9820-9830. [PMID: 37938019 DOI: 10.1021/acs.jpca.3c04540] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2023]
Abstract
An anisotropic interlayer force field that describes the interlayer interactions in homogeneous and heterogeneous interfaces of group-VI transition metal dichalcogenides (MX2, where M = Mo, W, and X = S, Se) is presented. The force field is benchmarked against density functional theory calculations for bilayer systems within the Heyd-Scuseria-Ernzerhof hybrid density functional approximation, augmented by a nonlocal many-body dispersion treatment of long-range correlation. The parametrization yields good agreement with the reference calculations of binding energy curves and sliding potential energy surfaces. It is found to be transferable to transition metal dichalcogenide (TMD) junctions outside of the training set that contain the same atom types. Calculated bulk moduli agree with most previous dispersion-corrected density functional theory predictions, which underestimate the available experimental values. Calculated phonon spectra of the various junctions under consideration demonstrate the importance of appropriately treating the anisotropic nature of the layered interfaces. Considering our previous parametrization for MoS2, the anisotropic interlayer potential enables accurate and efficient large-scale simulations of the dynamical, tribological, and thermal transport properties of a large set of homogeneous and heterogeneous TMD interfaces.
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Affiliation(s)
- Wenwu Jiang
- Department of Engineering Mechanics, School of Civil Engineering, Wuhan University, Wuhan, Hubei 430072, China
| | - Reut Sofer
- School of Chemistry and The Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv 6997801, Israel
| | - Xiang Gao
- School of Chemistry and The Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv 6997801, Israel
| | - Alexandre Tkatchenko
- Department of Physics and Materials Science, University of Luxembourg, L-1511 Luxembourg City, Luxembourg
| | - Leeor Kronik
- Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovoth 76100, Israel
| | - Wengen Ouyang
- Department of Engineering Mechanics, School of Civil Engineering, Wuhan University, Wuhan, Hubei 430072, China
- State Key Laboratory of Water Resources and Hydropower Engineering Science, Wuhan University, Wuhan 430072, China
| | - Michael Urbakh
- School of Chemistry and The Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv 6997801, Israel
| | - Oded Hod
- School of Chemistry and The Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv 6997801, Israel
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20
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Jiao C, Pei S, Wu S, Wang Z, Xia J. Tuning and exploiting interlayer coupling in two-dimensional van der Waals heterostructures. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2023; 86:114503. [PMID: 37774692 DOI: 10.1088/1361-6633/acfe89] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/31/2022] [Accepted: 09/29/2023] [Indexed: 10/01/2023]
Abstract
Two-dimensional (2D) layered materials can stack into new material systems, with van der Waals (vdW) interaction between the adjacent constituent layers. This stacking process of 2D atomic layers creates a new degree of freedom-interlayer interface between two adjacent layers-that can be independently studied and tuned from the intralayer degree of freedom. In such heterostructures (HSs), the physical properties are largely determined by the vdW interaction between the individual layers,i.e.interlayer coupling, which can be effectively tuned by a number of means. In this review, we summarize and discuss a number of such approaches, including stacking order, electric field, intercalation, and pressure, with both their experimental demonstrations and theoretical predictions. A comprehensive overview of the modulation on structural, optical, electrical, and magnetic properties by these four approaches are also presented. We conclude this review by discussing several prospective research directions in 2D HSs field, including fundamental physics study, property tuning techniques, and future applications.
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Affiliation(s)
- Chenyin Jiao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Shenghai Pei
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Song Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Zenghui Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Juan Xia
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
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21
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Xie X, Ding J, Wu B, Zheng H, Li S, Wang CT, He J, Liu Z, Wang JT, Liu Y. Pressure-Induced Dynamic Tuning of Interlayer Coupling in Twisted WSe 2/WSe 2 Homobilayers. NANO LETTERS 2023; 23:8833-8841. [PMID: 37726204 DOI: 10.1021/acs.nanolett.3c01640] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/21/2023]
Abstract
Moiré superlattices induced by twisted van der Waals (vdW) heterostructures or homostructures have recently gained significant attention due to their potential to generate exotic strong-correlation electronic and phonon phenomena. However, the lack of dynamic tuning for interlayer coupling of moiré superlattices hinders a thorough understanding and development of the moiré correlation state. Here, we present a dynamic tuning method for twisted WSe2/WSe2 homobilayers using a diamond anvil cell (DAC). We demonstrate the powerful tuning of interlayer coupling and observe an enhanced response to pressure for interlayer breathing modes and the rapid descent of indirect excitons in twisted WSe2/WSe2 homobilayers. Our findings indicate that the introduction of a moiré superlattice for WSe2 bilayers gives rise to hybridized excitons, which lead to the different pressure-evolution exciton behaviors compared to natural WSe2 bilayers. Our results provide a novel understanding of moiré physics and offer an effective method to tune interlayer coupling of moiré superlattices.
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Affiliation(s)
- Xing Xie
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
- State Key Laboratory of High-Performance Complex Manufacturing, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Junnan Ding
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
- State Key Laboratory of High-Performance Complex Manufacturing, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Biao Wu
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
- State Key Laboratory of High-Performance Complex Manufacturing, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Haihong Zheng
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
- State Key Laboratory of High-Performance Complex Manufacturing, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Shaofei Li
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Chang-Tian Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Jun He
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Zongwen Liu
- School of Chemical and Biomolecular Engineering, The University of Sydney, Camperdown, New South Wales 2006, Australia
- The University of Sydney Nano Institute, The University of Sydney, Camperdown, New South Wales 2006 Australia
| | - Jian-Tao Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People's Republic of China
| | - Yanping Liu
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
- State Key Laboratory of High-Performance Complex Manufacturing, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
- Shenzhen Research Institute of Central South University, Shenzhen 518000, People's Republic of China
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22
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Pimenta Martins LG, Ruiz-Tijerina DA, Occhialini CA, Park JH, Song Q, Lu AY, Venezuela P, Cançado LG, Mazzoni MSC, Matos MJS, Kong J, Comin R. Pressure tuning of minibands in MoS 2/WSe 2 heterostructures revealed by moiré phonons. NATURE NANOTECHNOLOGY 2023; 18:1147-1153. [PMID: 37322144 DOI: 10.1038/s41565-023-01413-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/01/2022] [Accepted: 05/08/2023] [Indexed: 06/17/2023]
Abstract
Moiré superlattices of two-dimensional heterostructures arose as a new platform to investigate emergent behaviour in quantum solids with unprecedented tunability. To glean insights into the physics of these systems, it is paramount to discover new probes of the moiré potential and moiré minibands, as well as their dependence on external tuning parameters. Hydrostatic pressure is a powerful control parameter, since it allows to continuously and reversibly enhance the moiré potential. Here we use high pressure to tune the minibands in a rotationally aligned MoS2/WSe2 moiré heterostructure, and show that their evolution can be probed via moiré phonons. The latter are Raman-inactive phonons from the individual layers that are activated by the moiré potential. Moiré phonons manifest themselves as satellite Raman peaks arising exclusively from the heterostructure region, increasing in intensity and frequency under applied pressure. Further theoretical analysis reveals that their scattering rate is directly connected to the moiré potential strength. By comparing the experimental and calculated pressure-induced enhancement, we obtain numerical estimates for the moiré potential amplitude and its pressure dependence. The present work establishes moiré phonons as a sensitive probe of the moiré potential as well as the electronic structures of moiré systems.
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Affiliation(s)
| | - David A Ruiz-Tijerina
- Departamento de Física Química, Instituto de Física, Universidad Nacional Autónoma de México, Ciudad de México, Mexico
| | - Connor A Occhialini
- Physics Department, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Ji-Hoon Park
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Qian Song
- Physics Department, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Ang-Yu Lu
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Pedro Venezuela
- Instituto de Física, Universidade Federal Fluminense, Niterói, Brazil
| | - Luiz G Cançado
- Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, Brazil
| | - Mário S C Mazzoni
- Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, Brazil
| | - Matheus J S Matos
- Departamento de Física, Universidade Federal de Ouro Preto, Ouro Preto, Brazil
| | - Jing Kong
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA.
| | - Riccardo Comin
- Physics Department, Massachusetts Institute of Technology, Cambridge, MA, USA.
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23
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Sutter E, Sutter P. Self-Assembly of Mixed-Dimensional GeS 1- x Se x (1D Nanowire)-(2D Plate) Van der Waals Heterostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2302592. [PMID: 37312407 DOI: 10.1002/smll.202302592] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/27/2023] [Revised: 05/09/2023] [Indexed: 06/15/2023]
Abstract
The integration of dissimilar materials into heterostructures is a mainstay of modern materials science and technology. An alternative strategy of joining components with different electronic structure involves mixed-dimensional heterostructures, that is, architectures consisting of elements with different dimensionality, for example, 1D nanowires and 2D plates. Combining the two approaches can result in hybrid architectures in which both the dimensionality and composition vary between the components, potentially offering even larger contrast between their electronic structures. To date, realizing such heteromaterials mixed-dimensional heterostructures has required sequential multi-step growth processes. Here, it is shown that differences in precursor incorporation rates between vapor-liquid-solid growth of 1D nanowires and direct vapor-solid growth of 2D plates attached to the wires can be harnessed to synthesize heteromaterials mixed-dimensional heterostructures in a single-step growth process. Exposure to mixed GeS and GeSe vapors produces GeS1- x Sex van der Waals nanowires whose S:Se ratio is considerably larger than that of attached layered plates. Cathodoluminescence spectroscopy on single heterostructures confirms that the bandgap contrast between the components is determined by both composition and carrier confinement. These results demonstrate an avenue toward complex heteroarchitectures using single-step synthesis processes.
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Affiliation(s)
- Eli Sutter
- Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE, 68588, USA
- Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE, 68588, USA
| | - Peter Sutter
- Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, NE, 68588, USA
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24
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Lim SY, Kim HG, Choi YW, Taniguchi T, Watanabe K, Choi HJ, Cheong H. Modulation of Phonons and Excitons Due to Moiré Potentials in Twisted Bilayer of WSe 2/MoSe 2. ACS NANO 2023. [PMID: 37410957 DOI: 10.1021/acsnano.3c03883] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/08/2023]
Abstract
The application of two-dimensional materials has been expanded by introducing the twisted bilayer (TBL) system. However, the landscape of the interlayer interaction in hetero-TBLs has not yet been fully understood, while that in homo-TBLs has been extensively studied, with the dependence on the twist angle between the constituent layers. Here, we present detailed analyses on the interlayer interaction that depends on the twist angle in WSe2/MoSe2 hetero-TBL via Raman and photoluminescence studies combined with first-principles calculation. We observe interlayer vibrational modes, moiré phonons, and the interlayer excitonic states that evolve with the twist angle and identify different regimes with distinct characteristics of such features. Moreover, the interlayer excitons that appear strong in the hetero-TBLs with twist angles near 0° or 60° have different energies and photoluminescence excitation spectra for the two cases, which results from different electronic structures and carrier relaxation dynamics. These results would enable a better understanding of the interlayer interaction in hetero-TBLs.
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Affiliation(s)
- Soo Yeon Lim
- Department of Physics, Sogang University, Seoul 04107, Korea
| | - Han-Gyu Kim
- Department of Physics, Yonsei University, Seoul 03722, Korea
| | - Young Woo Choi
- Department of Physics, Yonsei University, Seoul 03722, Korea
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Nakami, Tsukuba, Ibaraki 305-0044 Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Nakami, Tsukuba, Ibaraki 305-0044 Japan
| | | | - Hyeonsik Cheong
- Department of Physics, Sogang University, Seoul 04107, Korea
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25
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Zhou J, Cui J, Du S, Zhao Z, Guo J, Li S, Zhang W, Liu N, Li X, Bai Q, Guo Y, Mi S, Cheng Z, He L, Nie JC, Yang Y, Dou R. A natural indirect-to-direct band gap transition in artificially fabricated MoS 2 and MoSe 2 flowers. NANOSCALE 2023; 15:7792-7802. [PMID: 37021968 DOI: 10.1039/d3nr00477e] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
Twisted bilayer (tB) transition metal dichalcogenide (TMD) structures formed from two pieces of a periodic pattern overlaid with a relative twist manifest novel electronic and optical properties and correlated electronic phenomena. Here, twisted flower-like MoS2 and MoSe2 bilayers were artificially fabricated by the chemical vapor deposition (CVD) method. Photoluminescence (PL) studies demonstrated that an energy band structural transition from the indirect gap to the direct gap happened in the region away from the flower center in tB MoS2 (MoSe2) flower patterns, accompanied by an enhanced PL intensity. The indirect-to-direct-gap transition in the tB-MoS2 (MoSe2) flower dominantly originated from a gradually enlarged interlayer spacing and thus, interlayer decoupling during the spiral growth of tB flower patterns. Meanwhile, the expanded interlayer spacing resulted in a decreased effective mass of the electrons. This means that the charged exciton (trion) population was reduced and the neutral exciton density was increased to obtain the upgraded PL intensity in the off-center region. Our experimental results were further evidenced by the density functional theory (DFT) calculations of the energy band structures and the effective masses of electrons and holes for the artificial tB-MoS2 flower with different interlayer spacings. The single-layer behavior of tB flower-like homobilayers provided a viable route to finely manipulate the energy band gap and the corresponding exotic optical properties by locally tuning the stacked structures and to satisfy the real requirement in TMD-based optoelectronic devices.
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Affiliation(s)
- Jun Zhou
- Department of Physics, Beijing Normal, University, Beijing, 100875, China.
| | - Juan Cui
- LCP, Inst Appl Phys & Computation Math, Beijing 100088, China.
| | - Shuo Du
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Zihan Zhao
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, 100875, China
| | - Jianfeng Guo
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, P. R. China
| | - Songyang Li
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, P. R. China
| | - Weifeng Zhang
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, 100875, China
| | - Nan Liu
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, 100875, China
| | - Xiaotian Li
- Department of Physics, Beijing Normal, University, Beijing, 100875, China.
| | - Qinghu Bai
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Yang Guo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Shuo Mi
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, P. R. China
| | - Zhihai Cheng
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, P. R. China
| | - Lin He
- Department of Physics, Beijing Normal, University, Beijing, 100875, China.
| | - J C Nie
- Department of Physics, Beijing Normal, University, Beijing, 100875, China.
| | - Yu Yang
- LCP, Inst Appl Phys & Computation Math, Beijing 100088, China.
| | - Ruifen Dou
- Department of Physics, Beijing Normal, University, Beijing, 100875, China.
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26
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Burns K, Tan AMZ, Hachtel JA, Aditya A, Baradwaj N, Mishra A, Linker T, Nakano A, Kalia R, Lang EJ, Schoell R, Hennig RG, Hattar K, Aitkaliyeva A. Tailoring the Angular Mismatch in MoS 2 Homobilayers through Deformation Fields. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2300098. [PMID: 37026674 DOI: 10.1002/smll.202300098] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/04/2023] [Revised: 03/06/2023] [Indexed: 06/19/2023]
Abstract
Ultrathin MoS2 has shown remarkable characteristics at the atomic scale with an immutable disorder to weak external stimuli. Ion beam modification unlocks the potential to selectively tune the size, concentration, and morphology of defects produced at the site of impact in 2D materials. Combining experiments, first-principles calculations, atomistic simulations, and transfer learning, it is shown that irradiation-induced defects can induce a rotation-dependent moiré pattern in vertically stacked homobilayers of MoS2 by deforming the atomically thin material and exciting surface acoustic waves (SAWs). Additionally, the direct correlation between stress and lattice disorder by probing the intrinsic defects and atomic environments are demonstrated. The method introduced in this paper sheds light on how engineering defects in the lattice can be used to tailor the angular mismatch in van der Waals (vdW) solids.
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Affiliation(s)
- Kory Burns
- Department of Materials Science & Engineering, University of Florida, Gainesville, FL, 32611, USA
- Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, NM, 87545, USA
- Department of Materials Science & Engineering, University of Virginia, Charlottesville, VA, 22904, USA
| | - Anne Marie Z Tan
- Department of Materials Science & Engineering, University of Florida, Gainesville, FL, 32611, USA
| | - Jordan A Hachtel
- Center for Nanophase Materials Science, Oak Ridge National Laboratory, Oak Ridge, TN, 37830, USA
| | - Anikeya Aditya
- Department of Physics, University of Southern California, Los Angeles, CA, 90089, USA
| | - Nitish Baradwaj
- Department of Physics, University of Southern California, Los Angeles, CA, 90089, USA
| | - Ankit Mishra
- Department of Physics, University of Southern California, Los Angeles, CA, 90089, USA
| | - Thomas Linker
- Department of Physics, University of Southern California, Los Angeles, CA, 90089, USA
| | - Aiichiro Nakano
- Department of Physics, University of Southern California, Los Angeles, CA, 90089, USA
| | - Rajiv Kalia
- Department of Physics, University of Southern California, Los Angeles, CA, 90089, USA
| | - Eric J Lang
- Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, NM, 87545, USA
- Department of Nuclear Engineering, University of New Mexico, Albuquerque, NM, 87131, USA
| | - Ryan Schoell
- Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, NM, 87545, USA
| | - Richard G Hennig
- Department of Materials Science & Engineering, University of Florida, Gainesville, FL, 32611, USA
| | - Khalid Hattar
- Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, NM, 87545, USA
- Department of Nuclear Engineering, University of Tennessee, Knoxville, TN, 37996, USA
| | - Assel Aitkaliyeva
- Department of Materials Science & Engineering, University of Florida, Gainesville, FL, 32611, USA
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27
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Zhang M, Han N, Zhang J, Wang J, Chen X, Zhao J, Gan X. Emergent second-harmonic generation in van der Waals heterostructure of bilayer MoS 2 and monolayer graphene. SCIENCE ADVANCES 2023; 9:eadf4571. [PMID: 36921058 PMCID: PMC10017043 DOI: 10.1126/sciadv.adf4571] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/23/2022] [Accepted: 02/14/2023] [Indexed: 05/29/2023]
Abstract
Van der Waals (vdW) stacking of two-dimensional (2D) materials to create artificial structures has enabled remarkable discoveries and novel properties in fundamental physics. Here, we report that vdW stacking of centrosymmetric 2D materials, e.g., bilayer MoS2 (2LM) and monolayer graphene (1LG), could support remarkable second-harmonic generation (SHG). The required centrosymmetry breaking for second-order hyperpolarizability arises from the interlayer charge transfer between 2LM and 1LG and the imbalanced charge distribution in 2LM, which are verified by first-principles calculations, Raman spectroscopy, and polarization-resolved SHG. The strength of SHG from 2LM/1LG is of the same order of magnitude as that from the monolayer MoS2, which is well recognized with strong second-order nonlinearity. The emergent SHG reveals that the interlayer charge transfer can effectively modify the symmetry and nonlinear optical properties of 2D heterostructures. It also indicates the great opportunity of SHG spectroscopy for characterizing interlayer coupling in vdW heterostructures.
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Affiliation(s)
- Mingwen Zhang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi’an 710129, China
| | - Nannan Han
- Frontiers Science Center for Flexible Electronics, Xi’an Institute of Flexible Electronics (IFE), and Xi’an Institute of Biomedical Materials and Engineering, Northwestern Polytechnical University, Xi’an 710129, China
| | - Jiachen Zhang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi’an 710129, China
| | - Jing Wang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi’an 710129, China
| | - Xiaoqing Chen
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi’an 710129, China
| | - Jianlin Zhao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi’an 710129, China
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi’an 710129, China
- School of Microelectronics, Northwestern Polytechnical University, Xi’an 710129, China
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28
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Xiao Y, Xiong C, Chen MM, Wang S, Fu L, Zhang X. Structure modulation of two-dimensional transition metal chalcogenides: recent advances in methodology, mechanism and applications. Chem Soc Rev 2023; 52:1215-1272. [PMID: 36601686 DOI: 10.1039/d1cs01016f] [Citation(s) in RCA: 22] [Impact Index Per Article: 22.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/06/2023]
Abstract
Together with the development of two-dimensional (2D) materials, transition metal dichalcogenides (TMDs) have become one of the most popular series of model materials for fundamental sciences and practical applications. Due to the ever-growing requirements of customization and multi-function, dozens of modulated structures have been introduced in TMDs. In this review, we present a systematic and comprehensive overview of the structure modulation of TMDs, including point, linear and out-of-plane structures, following and updating the conventional classification for silicon and related bulk semiconductors. In particular, we focus on the structural characteristics of modulated TMD structures and analyse the corresponding root causes. We also summarize the recent progress in modulating methods, mechanisms, properties and applications based on modulated TMD structures. Finally, we demonstrate challenges and prospects in the structure modulation of TMDs and forecast potential directions about what and how breakthroughs can be achieved.
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Affiliation(s)
- Yao Xiao
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Chengyi Xiong
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Miao-Miao Chen
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Shengfu Wang
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Lei Fu
- The Institute for Advanced Studies (IAS), Wuhan University, Wuhan 430072, P. R. China. .,College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, P. R. China.
| | - Xiuhua Zhang
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
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29
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Rahman S, Sun X, Zhu Y, Lu Y. Extraordinary Phonon Displacement and Giant Resonance Raman Enhancement in WSe 2/WS 2 Moiré Heterostructures. ACS NANO 2022; 16:21505-21517. [PMID: 36441581 DOI: 10.1021/acsnano.2c10092] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Twisted van der Waals heterostructures are known to induce surprisingly diverse and intriguing phenomena, such as correlated electronic phase and unconventional optical properties. This can be realized by controlled rotation of adjacent atomic planes, which provides an uncommon way to manipulate inelastic light-matter interactions. Here, we discover an extraordinary blue shift of 5-6 wavenumbers for high-frequency phonon modes in WS2/WSe2 twisted heterobilayers, captured meticulously using Raman spectroscopy. Phonon spectra displace rapidly over a subtle change in interlayer twist angle owing to heterostrain and atomic reconstruction from the Moiré pattern. First-order linear coefficients of the phonon modes in twisted heterostructures are further found to increase largely compared to their monolayer counterpart and vary immensely with the twist angle. Exceptional and extravagant enhancement of up to 50-fold is observed in the Raman vibrational intensity at a specific twist angle; this is largely influenced by the resonance process derived from a simple critical twist angle model. In addition, we depict how the resonance can be modulated by changing the thermal conditions and also the stacking angle. Therefore, our work further highlights the twist-driven phonon dynamics in pristine two-dimensional heterostructures, adding vital insight into Moiré physics and promoting comprehensive understanding of structural and optical properties in Moiré superlattices.
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Affiliation(s)
- Sharidya Rahman
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, ACT2601, Australia
| | - Xueqian Sun
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, ACT2601, Australia
| | - Yi Zhu
- Department of Engineering, University of Cambridge, CambridgeCB3 0FA, United Kingdom
| | - Yuerui Lu
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, ACT2601, Australia
- Centre for Quantum Computation and Communication Technology, School of Engineering, The Australian National University, Canberra, ACT2601, Australia
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30
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Chuang HJ, Phillips M, McCreary KM, Wickramaratne D, Rosenberger MR, Oleshko VP, Proscia NV, Lohmann M, O'Hara DJ, Cunningham PD, Hellberg CS, Jonker BT. Emergent Moiré Phonons Due to Zone Folding in WSe 2-WS 2 Van der Waals Heterostructures. ACS NANO 2022; 16:16260-16270. [PMID: 36223545 DOI: 10.1021/acsnano.2c05204] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Bilayers of 2D materials offer opportunities for creating devices with tunable electronic, optical, and mechanical properties. In van der Waals heterostructures (vdWHs) where the constituent monolayers have different lattice constants, a moiré superlattice forms with a length scale larger than the lattice constant of either constituent material regardless of twist angle. Here, we report the appearance of moiré Raman modes from nearly aligned WSe2-WS2 vdWHs in the range of 240-260 cm-1, which are absent in both monolayers and homobilayers of WSe2 and WS2 and in largely misaligned WSe2-WS2 vdWHs. Using first-principles calculations and geometric arguments, we show that these moiré Raman modes are a consequence of the large moiré length scale, which results in zone-folded phonon modes that are Raman active. These modes are sensitive to changes in twist angle, but notably, they occur at identical frequencies for a given small twist angle away from either the 0-degree or 60-degree aligned heterostructure. Our measurements also show a strong Raman intensity modulation in the frequency range of interest, with near 0 and near 60-degree vdWHs exhibiting a markedly different dependence on excitation energy. In near 0-degree aligned WSe2-WS2 vdWHs, a nearly complete suppression of both the moiré Raman modes and the WSe2 A1g Raman mode (∼250 cm-1) is observed when exciting with a 532 nm CW laser at room temperature. Temperature-dependent reflectance contrast measurements demonstrate the significant Raman intensity modulation arises from resonant Raman effects.
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Affiliation(s)
- Hsun-Jen Chuang
- Naval Research Laboratory, Washington, D.C.20375, United States
- Nova Research, Inc., Washington, D.C.20375, United States
| | | | | | | | | | - Vladimir P Oleshko
- National Institute of Standard and Technology, Gaithersburg, Maryland20899, United States
| | - Nicholas V Proscia
- Naval Research Laboratory, Washington, D.C.20375, United States
- NRC Postdoc residing at U.S. Naval Research Laboratory, Washington, D.C.20375, United States
| | - Mark Lohmann
- Naval Research Laboratory, Washington, D.C.20375, United States
- American Society for Engineering Education, Washington, D.C.20036, United States
| | - Dante J O'Hara
- Naval Research Laboratory, Washington, D.C.20375, United States
| | | | | | - Berend T Jonker
- Naval Research Laboratory, Washington, D.C.20375, United States
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31
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Lai JM, Sun YJ, Tan QH, Tan PH, Zhang J. Laser Cooling of a Lattice Vibration in van der Waals Semiconductor. NANO LETTERS 2022; 22:7129-7135. [PMID: 35993841 DOI: 10.1021/acs.nanolett.2c02240] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Laser cooling atoms and molecules to ultralow temperatures has produced plenty of opportunities in fundamental physics, precision metrology, and quantum science. Although theoretically proposed over 40 years, the laser cooling of certain lattice vibrations (i.e., phonon) remains a challenge owing to the complexity of solid structures. Here, we demonstrate Raman cooling of a longitudinal optical phonon in two-dimensional semiconductor WS2 by red-detuning excitation at the sideband of the exciton (bound electron-hole pair). Strong coupling between the phonon and exciton and appreciable optomechanical coupling rates provide access to cooling high-frequency phonons that are robust against thermal decoherence even at room temperature. Our experiment opens possibilities of laser cooling and control of individual optical phonon and, eventually, possible cooling of matter in van der Waals semiconductor.
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Affiliation(s)
- Jia-Min Lai
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yu-Jia Sun
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Qing-Hai Tan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Ping-Heng Tan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jun Zhang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- CAS Center of Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100049, China
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32
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Li Y, Xiang C, Chiabrera FM, Yun S, Zhang H, Kelly DJ, Dahm RT, Kirchert CKR, Cozannet TEL, Trier F, Christensen DV, Booth TJ, Simonsen SB, Kadkhodazadeh S, Jespersen TS, Pryds N. Stacking and Twisting of Freestanding Complex Oxide Thin Films. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2203187. [PMID: 35901262 DOI: 10.1002/adma.202203187] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/08/2022] [Revised: 07/26/2022] [Indexed: 06/15/2023]
Abstract
The integration of dissimilar materials in heterostructures has long been a cornerstone of modern materials science-seminal examples are 2D materials and van der Waals heterostructures. Recently, new methods have been developed that enable the realization of ultrathin freestanding oxide films approaching the 2D limit. Oxides offer new degrees of freedom, due to the strong electronic interactions, especially the 3d orbital electrons, which give rise to rich exotic phases. Inspired by this progress, a new platform for assembling freestanding oxide thin films with different materials and orientations into artificial stacks with heterointerfaces is developed. It is shown that the oxide stacks can be tailored by controlling the stacking sequences, as well as the twist angle between the constituent layers with atomically sharp interfaces, leading to distinct moiré patterns in the transmission electron microscopy images of the full stacks. Stacking and twisting is recognized as a key degree of structural freedom in 2D materials but, until now, has never been realized for oxide materials. This approach opens unexplored avenues for fabricating artificial 3D oxide stacking heterostructures with freestanding membranes across a broad range of complex oxide crystal structures with functionalities not available in conventional 2D materials.
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Affiliation(s)
- Ying Li
- Department of Energy Conversion and Storage, Technical University of Denmark (DTU), Fysikvej, 310, Kgs. Lyngby, 2800, Denmark
- Hubei Province Key Laboratory of Systems Science in Metallurgical Process, Faculty of Science, Wuhan University of Science and Technology, Wuhan, 430081, P. R. China
| | - Cheng Xiang
- Department of Physics, Centre for Nanostructured Graphene (CNG), Technical University of Denmark (DTU), Fysikvej, 309, Kgs. Lyngby, 2800, Denmark
| | - Francesco M Chiabrera
- Department of Energy Conversion and Storage, Technical University of Denmark (DTU), Fysikvej, 310, Kgs. Lyngby, 2800, Denmark
| | - Shinhee Yun
- Department of Energy Conversion and Storage, Technical University of Denmark (DTU), Fysikvej, 310, Kgs. Lyngby, 2800, Denmark
| | - Haiwu Zhang
- Department of Energy Conversion and Storage, Technical University of Denmark (DTU), Fysikvej, 310, Kgs. Lyngby, 2800, Denmark
| | - Daniel J Kelly
- DTU Nanolab, Technical University of Denmark (DTU), Fysikvej, 307, Kgs. Lyngby, 2800, Denmark
| | - Rasmus T Dahm
- Department of Energy Conversion and Storage, Technical University of Denmark (DTU), Fysikvej, 310, Kgs. Lyngby, 2800, Denmark
| | - Charline K R Kirchert
- Department of Energy Conversion and Storage, Technical University of Denmark (DTU), Fysikvej, 310, Kgs. Lyngby, 2800, Denmark
| | - Thomas E Le Cozannet
- Department of Energy Conversion and Storage, Technical University of Denmark (DTU), Fysikvej, 310, Kgs. Lyngby, 2800, Denmark
| | - Felix Trier
- Department of Energy Conversion and Storage, Technical University of Denmark (DTU), Fysikvej, 310, Kgs. Lyngby, 2800, Denmark
| | - Dennis V Christensen
- Department of Energy Conversion and Storage, Technical University of Denmark (DTU), Fysikvej, 310, Kgs. Lyngby, 2800, Denmark
| | - Timothy J Booth
- Department of Physics, Centre for Nanostructured Graphene (CNG), Technical University of Denmark (DTU), Fysikvej, 309, Kgs. Lyngby, 2800, Denmark
| | - Søren B Simonsen
- Department of Energy Conversion and Storage, Technical University of Denmark (DTU), Fysikvej, 310, Kgs. Lyngby, 2800, Denmark
| | - Shima Kadkhodazadeh
- DTU Nanolab, Technical University of Denmark (DTU), Fysikvej, 307, Kgs. Lyngby, 2800, Denmark
| | - Thomas S Jespersen
- Department of Energy Conversion and Storage, Technical University of Denmark (DTU), Fysikvej, 310, Kgs. Lyngby, 2800, Denmark
| | - Nini Pryds
- Department of Energy Conversion and Storage, Technical University of Denmark (DTU), Fysikvej, 310, Kgs. Lyngby, 2800, Denmark
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33
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Bhatnagar M, Woźniak T, Kipczak Ł, Zawadzka N, Olkowska-Pucko K, Grzeszczyk M, Pawłowski J, Watanabe K, Taniguchi T, Babiński A, Molas MR. Temperature induced modulation of resonant Raman scattering in bilayer 2H-MoS 2. Sci Rep 2022; 12:14169. [PMID: 35986062 PMCID: PMC9391345 DOI: 10.1038/s41598-022-18439-7] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/24/2022] [Accepted: 08/11/2022] [Indexed: 11/15/2022] Open
Abstract
The temperature evolution of the resonant Raman scattering from high-quality bilayer 2H-MoS[Formula: see text] encapsulated in hexagonal BN flakes is presented. The observed resonant Raman scattering spectrum as initiated by the laser energy of 1.96 eV, close to the A excitonic resonance, shows rich and distinct vibrational features that are otherwise not observed in non-resonant scattering. The appearance of 1st and 2nd order phonon modes is unambiguously observed in a broad range of temperatures from 5 to 320 K. The spectrum includes the Raman-active modes, i.e. E[Formula: see text]([Formula: see text]) and A[Formula: see text]([Formula: see text]) along with their Davydov-split counterparts, i.e. E[Formula: see text]([Formula: see text]) and B[Formula: see text]([Formula: see text]). The temperature evolution of the Raman scattering spectrum brings forward key observations, as the integrated intensity profiles of different phonon modes show diverse trends. The Raman-active A[Formula: see text]([Formula: see text]) mode, which dominates the Raman scattering spectrum at T = 5 K quenches with increasing temperature. Surprisingly, at room temperature the B[Formula: see text]([Formula: see text]) mode, which is infrared-active in the bilayer, is substantially stronger than its nominally Raman-active A[Formula: see text]([Formula: see text]) counterpart.
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Affiliation(s)
- Mukul Bhatnagar
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093, Warsaw, Poland.
| | - Tomasz Woźniak
- Department of Semiconductor Materials Engineering, Wrocław University of Science and Technology, ul. Wybrzeże Wyspiańskiego 27, 50-370, Wrocław, Poland
| | - Łucja Kipczak
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093, Warsaw, Poland
| | - Natalia Zawadzka
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093, Warsaw, Poland
| | - Katarzyna Olkowska-Pucko
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093, Warsaw, Poland
| | - Magdalena Grzeszczyk
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093, Warsaw, Poland
| | - Jan Pawłowski
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093, Warsaw, Poland
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Adam Babiński
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093, Warsaw, Poland
| | - Maciej R Molas
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093, Warsaw, Poland.
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34
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Rahman S, Lu Y. Nano-engineering and nano-manufacturing in 2D materials: marvels of nanotechnology. NANOSCALE HORIZONS 2022; 7:849-872. [PMID: 35758316 DOI: 10.1039/d2nh00226d] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional materials have attracted significant interest and investigation since the marvellous discovery of graphene. Due to their unique physical, mechanical and optical properties, van der Waals (vdW) materials possess extraordinary potential for application in future optoelectronics devices. Nano-engineering and nano-manufacturing in the atomically thin regime has further opened multifarious avenues to explore novel physical properties. Among them, moiré heterostructures, strain engineering and substrate manipulation have created numerous exotic and topological phenomena such as unconventional superconductivity, orbital magnetism, flexible nanoelectronics and highly efficient photovoltaics. This review comprehensively summarizes the three most influential techniques of nano-engineering in 2D materials. The latest development in the marvels of moiré structures in vdW materials is discussed; in addition, topological structures in layered materials and substrate engineering on the nanoscale are thoroughly scrutinized to highlight their significance in micro- and nano-devices. Finally, we conclude with remarks on challenges and possible future directions in the rapidly expanding field of nanotechnology and nanomaterial.
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Affiliation(s)
- Sharidya Rahman
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, ACT 2601, Australia.
| | - Yuerui Lu
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, ACT 2601, Australia.
- ARC Centre for Quantum Computation and Communication Technology, Department of Quantum Science, School of Engineering, The Australian National University, Acton, ACT 2601, Australia.
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35
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Mandal S, Maity I, Das A, Jain M, Maiti PK. Tunable lattice thermal conductivity of twisted bilayer MoS 2. Phys Chem Chem Phys 2022; 24:13860-13868. [PMID: 35621002 DOI: 10.1039/d2cp01304e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
We have studied the thermal conductivity (κ) of layered MoS2, a typical member of the transition metal dichalcogenide (TMDC) materials, using fully atomistic molecular dynamics simulations and Boltzmann transport equation (BTE) based first principles methods. We investigate the tuning of the thermal conductivity with the twist angle between two layers and found a decreasing trend of κ with the increase in the lattice constant of the moiré superlattice. The thermal conductivity at twist angle θ = 21.78° is found to be 72.03 W m-1 K-1 and for an angle of 2.87°, it reaches 54.48 W m-1 K-1, leading to a 32% reduction in the thermal conductivity. We use first principles calculations based on the BTE for phonons to give a microscopic origin of the decrease in thermal conductivity through anharmonic phonon scattering events and also reaffirm the MD simulation results for the monolayer and bilayer.
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Affiliation(s)
- Soham Mandal
- Centre for Condensed Matter Theory, Department of Physics, Indian Institute of Science, Bangalore-560012, India.
| | - Indrajit Maity
- Centre for Condensed Matter Theory, Department of Physics, Indian Institute of Science, Bangalore-560012, India. .,Departments of Materials and the Thomas Young Centre for Theory and Simulation of Materials, Imperial College London, South Kensington Campus, London SW7 2BX, UK
| | - Anindya Das
- Centre for Condensed Matter Theory, Department of Physics, Indian Institute of Science, Bangalore-560012, India.
| | - Manish Jain
- Centre for Condensed Matter Theory, Department of Physics, Indian Institute of Science, Bangalore-560012, India.
| | - Prabal K Maiti
- Centre for Condensed Matter Theory, Department of Physics, Indian Institute of Science, Bangalore-560012, India.
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36
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Lin ML, Feng M, Wu JB, Ran FR, Chen T, Luo WX, Wu H, Han WP, Zhang X, Liu XL, Xu Y, Li H, Wang YF, Tan PH. Intralayer Phonons in Multilayer Graphene Moiré Superlattices. Research (Wash D C) 2022; 2022:9819373. [PMID: 35707049 PMCID: PMC9175117 DOI: 10.34133/2022/9819373] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/08/2022] [Accepted: 04/08/2022] [Indexed: 11/16/2022] Open
Abstract
Moiré pattern in twisted multilayers (tMLs) induces many emergent phenomena by subtle variation of atomic registry to modulate quasiparticles and their interactions, such as superconductivity, moiré excitons, and moiré phonons. The periodic superlattice potential introduced by moiré pattern also underlies patterned interlayer coupling at the interface of tMLs. Although this arising patterned interfacial coupling is much weaker than in-plane atomic interactions, it is crucial in moiré systems, as captured by the renormalized interlayer phonons in twisted bilayer transitional metal dichalcogenides. Here, we determine the quantitative relationship between the lattice dynamics of intralayer out-of-plane optical (ZO) phonons and patterned interfacial coupling in multilayer graphene moiré superlattices (MLG-MS) by the proposed perturbation model, which is previously challenging for MLGs due to their out-of-phase displacements of adjacent atoms in one atomic plane. We unveil that patterned interfacial coupling introduces profound modulations on Davydov components of nonfolded ZO phonon that are localized within the AB-stacked constituents, while the coupling results in layer-extended vibrations with symmetry of moiré pattern for moiré ZO phonons. Our work brings further degrees of freedom to engineer moiré physics according to the modulations imprinted on the phonon frequency and wavefunction.
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Affiliation(s)
- Miao-Ling Lin
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering & CAS Center of Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Min Feng
- School of Physics, Nankai University, Tianjin 300071, China
| | - Jiang-Bin Wu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Fei-Rong Ran
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211816, China
| | - Tao Chen
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Wei-Xia Luo
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering & CAS Center of Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Heng Wu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering & CAS Center of Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Wen-Peng Han
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Xin Zhang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Xue-Lu Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Yang Xu
- School of Micro-nanoelectronics, State Key Laboratory of Silicon Materials, Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Joint Institute, Zhejiang University, Hangzhou 310027, China
| | - Hai Li
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211816, China
| | - Yu-Fang Wang
- School of Physics, Nankai University, Tianjin 300071, China
| | - Ping-Heng Tan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center of Materials Science and Optoelectronics Engineering & CAS Center of Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100049, China
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37
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Wu Y, Wang J, Li Y, Zhou J, Wang BY, Yang A, Wang LW, Hwang HY, Cui Y. Observation of an intermediate state during lithium intercalation of twisted bilayer MoS 2. Nat Commun 2022; 13:3008. [PMID: 35637182 PMCID: PMC9151788 DOI: 10.1038/s41467-022-30516-z] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/06/2021] [Accepted: 02/24/2022] [Indexed: 11/22/2022] Open
Abstract
Lithium intercalation of MoS2 is generally believed to introduce a phase transition from H phase (semiconducting) to T phase (metallic). However, during the intercalation process, a spatially sharp boundary is usually formed between the fully intercalated T phase MoS2 and non-intercalated H phase MoS2. The intermediate state, i.e., lightly intercalated H phase MoS2 without a phase transition, is difficult to investigate by optical-microscope-based spectroscopy due to the narrow size. Here, we report the stabilization of the intermediate state across the whole flake of twisted bilayer MoS2. The twisted bilayer system allows the lithium to intercalate from the top surface and enables fast Li-ion diffusion by the reduced interlayer interaction. The E2g Raman mode of the intermediate state shows a peak splitting behavior. Our simulation results indicate that the intermediate state is stabilized by lithium-induced symmetry breaking of the H phase MoS2. Our results provide an insight into the non-uniform intercalation during battery charging and discharging, and also open a new opportunity to modulate the properties of twisted 2D systems with guest species doping in the Moiré structures.
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Affiliation(s)
- Yecun Wu
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, USA
- Department of Electrical Engineering, Stanford University, Stanford, CA, USA
| | - Jingyang Wang
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, USA
- Materials Sciences Division, Lawrence Berkeley Laboratory, Berkeley, CA, USA
| | - Yanbin Li
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, USA
| | - Jiawei Zhou
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, USA
| | - Bai Yang Wang
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, USA
- Department of Physics, Stanford University, Stanford, CA, USA
| | - Ankun Yang
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, USA
| | - Lin-Wang Wang
- Materials Sciences Division, Lawrence Berkeley Laboratory, Berkeley, CA, USA
| | - Harold Y Hwang
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, USA.
- Department of Applied Physics, Stanford University, Stanford, CA, USA.
| | - Yi Cui
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, USA.
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, USA.
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38
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Yang MM, Leng YC, Liu YL, Liu Y, Zhao YN, Tan L, Hu XW, Lian RQ, Liu XL, Cong RD, Sun SS, Li XL. Phonon and Exciton Properties between WS 2 and MoS 2 Layers via Inversion Heterostructure Engineering. ACS APPLIED MATERIALS & INTERFACES 2022; 14:19012-19022. [PMID: 35421305 DOI: 10.1021/acsami.1c24368] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Recently, two-dimensional (2D) van der Waals heterostructures (vdWHs) have exhibited emergent electronic and optical properties due to their peculiar phonons and excitons, which lay the foundation for the development of photoelectronic devices. The dielectric environment plays an important role in the interlayer coupling of vdWHs. Here, we studied the interlayer and extra-layer dielectric effects on phonon and exciton properties in WS2/MoS2 and MoS2/WS2 vdWHs by Raman and photoluminescence (PL) spectroscopy. The ultralow frequency (ULF) Raman modes are insensitive to atomic arrangement at the interface between 1LW and 1LM and dielectric environments of neighboring materials, and the layer breathing mode (LBM) frequency follows that of WS2. The shift of high-frequency (HF) Raman modes is attributable to interlayer dielectric screening and charge transfer effects. Furthermore, the energy of interlayer coupling exciton peak I is insensitive to atomic arrangement at the interface between 1LW and 1LM and its energy follows that of MoS2, but the slight intensity difference in inversion vdWHs means that the substrate's dielectric properties may induce doping on the bottom layer. This paper provides fundamental understanding of phonon and exciton properties of such artificially formed vdWHs structures, which is important for new insights into manipulating the performances of potential devices.
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Affiliation(s)
- Ming-Ming Yang
- National and Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science & Technology, Hebei University, Baoding 071002, P. R. China
| | - Yu-Chen Leng
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering & CAS Center of Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Yan-Liang Liu
- National and Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science & Technology, Hebei University, Baoding 071002, P. R. China
| | - Yi Liu
- National and Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science & Technology, Hebei University, Baoding 071002, P. R. China
| | - Ya-Nan Zhao
- National and Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science & Technology, Hebei University, Baoding 071002, P. R. China
| | - Li Tan
- National and Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science & Technology, Hebei University, Baoding 071002, P. R. China
| | - Xiao-Wen Hu
- National and Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science & Technology, Hebei University, Baoding 071002, P. R. China
| | - Ru-Qian Lian
- National and Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science & Technology, Hebei University, Baoding 071002, P. R. China
| | - Xue-Lu Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China
| | - Ri-Dong Cong
- National and Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science & Technology, Hebei University, Baoding 071002, P. R. China
| | - Shi-Shuai Sun
- College of Science, Tianjin University of Technology, Tianjin 300384, P. R. China
| | - Xiao-Li Li
- National and Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science & Technology, Hebei University, Baoding 071002, P. R. China
- State Key Laboratory of Photovoltaic Materials & Technology, Yingli Solar, Baoding 071051, P. R. China
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39
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Pan B, Zhou P, Xiao H, Yang X, Sun L. Slater-Koster parametrization for the phonons of monolayer MoX 2(X = S, Se or Te). JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:195702. [PMID: 35168223 DOI: 10.1088/1361-648x/ac5539] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/04/2021] [Accepted: 02/15/2022] [Indexed: 06/14/2023]
Abstract
With the help of the Slater-Koster parametrization, we construct simplified force constant (FC) models to describe the phonons of several two-dimensional (2D) transition metal dichalcogenides (TMDs) (MoX2, X = S, Se or Te) by only considering the FCs to fourth-nearest-neighbor interactions. By fitting the phonon dispersions derived from first-principles calculations, we find these models can well describe the symmetry characters and semimetal states of MoX2's phonons. Combining the basis of the FC model and the theory of tensor representation, we derive the origin of the irreducible representations at the high symmetry points Γ,KandM. Moreover, by using the compatibility relation between high symmetry points and high symmetry lines, we find the semimetal states of MoX2are protected by vertical and horizontal mirrors. Our work provides an effective tool to further study the phonons of 2D TMDs.
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Affiliation(s)
- Baoru Pan
- Department of Physics, Xiangtan University, Xiangtan 411105, People's Republic of China
| | - Pan Zhou
- Hunan Provincial Key laboratory of Thin Film Materials and Devices, School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, People's Republic of China
| | - Huaping Xiao
- Department of Physics, Xiangtan University, Xiangtan 411105, People's Republic of China
| | - Xuejuan Yang
- Department of Physics, Xiangtan University, Xiangtan 411105, People's Republic of China
| | - Lizhong Sun
- Hunan Provincial Key laboratory of Thin Film Materials and Devices, School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, People's Republic of China
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40
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León AM, Velásquez ÉA, Caro‐Lopera F, Mejía‐López J. Tuning Magnetic Order in CrI3 Bilayers via Moiré Patterns. ADVANCED THEORY AND SIMULATIONS 2022. [DOI: 10.1002/adts.202100307] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Affiliation(s)
- Andrea M. León
- Max Planck Institute for Chemical Physics of Solids Nöthnitzer Straße 40 Dresden Dresden 01187 Germany
| | - Éver A. Velásquez
- Grupo MATBIOM Facultad de Ciencias Básicas Universidad de Medellín Cra. 87 30‐65 Medellín Colombia
| | - Francisco Caro‐Lopera
- Facultad de Ciencias Básicas Universidad de Medellín Cra. 87 30‐65 Medellín Colombia
| | - José Mejía‐López
- Centro de Investigación en Nanotecnología y Materiales Avanzados Facultad de Física Pontificia Universidad Católica de Chile CEDENNA casilla 306 Santiago 22 Chile
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41
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Liu M, Wang L, Yu G. Developing Graphene-Based Moiré Heterostructures for Twistronics. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2103170. [PMID: 34723434 PMCID: PMC8728823 DOI: 10.1002/advs.202103170] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/23/2021] [Revised: 09/08/2021] [Indexed: 06/13/2023]
Abstract
Graphene-based moiré heterostructures are strongly correlated materials, and they are considered to be an effective platform to investigate the challenges of condensed matter physics. This is due to the distinct electronic properties that are unique to moiré superlattices and peculiar band structures. The increasing research on strongly correlated physics via graphene-based moiré heterostructures, especially unconventional superconductors, greatly promotes the development of condensed matter physics. Herein, the preparation methods of graphene-based moiré heterostructures on both in situ growth and assembling monolayer 2D materials are discussed. Methods to improve the quality of graphene and optimize the transfer process are presented to mitigate the limitations of low-quality graphene and damage caused by the transfer process during the fabrication of graphene-based moiré heterostructures. Then, the topological properties in various graphene-based moiré heterostructures are reviewed. Furthermore, recent advances regarding the factors that influence physical performances via a changing twist angle, the exertion of strain, and regulation of the dielectric environment are presented. Moreover, various unique physical properties in graphene-based moiré heterostructures are demonstrated. Finally, the challenges faced during the preparation and characterization of graphene-based moiré heterostructures are discussed. An outlook for the further development of moiré heterostructures is also presented.
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Affiliation(s)
- Mengya Liu
- School of Materials Science and EngineeringUniversity of Science and Technology BeijingBeijing100083P. R. China
- Beijing National Laboratory for Molecular SciencesCAS Research/Education Center for Excellence in Molecular SciencesInstitute of ChemistryChinese Academy of SciencesBeijing100190P. R. China
| | - Liping Wang
- School of Materials Science and EngineeringUniversity of Science and Technology BeijingBeijing100083P. R. China
| | - Gui Yu
- Beijing National Laboratory for Molecular SciencesCAS Research/Education Center for Excellence in Molecular SciencesInstitute of ChemistryChinese Academy of SciencesBeijing100190P. R. China
- School of Chemical SciencesUniversity of Chinese Academy of SciencesBeijing100049P. R. China
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42
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Ullah F, Lee JH, Tahir Z, Samad A, Le CT, Kim J, Kim D, Rashid MU, Lee S, Kim K, Cheong H, Jang JI, Seong MJ, Kim YS. Selective Growth and Robust Valley Polarization of Bilayer 3 R-MoS 2. ACS APPLIED MATERIALS & INTERFACES 2021; 13:57588-57596. [PMID: 34797625 DOI: 10.1021/acsami.1c16889] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Noncentrosymmetric transition-metal dichalcogenides, particularly their 3R polymorphs, provide a robust setting for valleytronics. Here, we report on the selective growth of monolayers and bilayers of MoS2, which were acquired from two closely but differently oriented substrates in a chemical vapor deposition reactor. It turns out that as-grown bilayers are predominantly 3R-type, not more common 2H-type, as verified by microscopic and spectroscopic characterization. As expected, the 3R bilayer showed a significantly higher valley polarization compared with the centrosymmetric 2H bilayer, which undergoes efficient interlayer scattering across contrasting valleys because of their vertical alignment of the K and K' points in momentum space. Interestingly, the 3R bilayer showed even higher valley polarization compared with the monolayer counterpart. Moreover, the 3R bilayer reasonably maintained its valley efficiency over a very wide range of excitation power density from ∼0.16 kW/cm2 to ∼0.16 MW/cm2 at both low and room temperatures. These observations are rather surprising because valley dephasing could be more efficient in the bilayer via both interlayer and intralayer scatterings, whereas only intralayer scattering is allowed in the monolayer. The improved valley polarization of the 3R bilayer can be attributed to its indirect-gap nature, where valley-polarized excitons can relax into the valley-insensitive band edge, which otherwise scatter into the contrasting valley to effectively cancel out the initial valley polarization. Our results provide a facile route for the growth of 3R-MoS2 bilayers that could be utilized as a platform for advancing valleytronics.
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Affiliation(s)
- Farman Ullah
- Department of Physics and Energy Harvest Storage Research Center, University of Ulsan, Ulsan 44610, South Korea
| | - Je-Ho Lee
- Department of Physics, Chung-Ang University, Seoul 06974, South Korea
| | - Zeeshan Tahir
- Department of Physics and Energy Harvest Storage Research Center, University of Ulsan, Ulsan 44610, South Korea
| | - Abdus Samad
- Department of Physics and Energy Harvest Storage Research Center, University of Ulsan, Ulsan 44610, South Korea
| | - Chinh Tam Le
- Department of Physics and Energy Harvest Storage Research Center, University of Ulsan, Ulsan 44610, South Korea
| | - Jungcheol Kim
- Department of Physics, Sogang University, Seoul 04107, South Korea
| | - Donggyu Kim
- Department of Physics, Sogang University, Seoul 04107, South Korea
| | - Mamoon Ur Rashid
- Department of Physics and Energy Harvest Storage Research Center, University of Ulsan, Ulsan 44610, South Korea
| | - Sol Lee
- Department of Physics, Yonsei University, Seoul 03722, South Korea
| | - Kwanpyo Kim
- Department of Physics, Yonsei University, Seoul 03722, South Korea
| | - Hyeonsik Cheong
- Department of Physics, Sogang University, Seoul 04107, South Korea
| | - Joon I Jang
- Department of Physics, Sogang University, Seoul 04107, South Korea
| | - Maeng-Je Seong
- Department of Physics, Chung-Ang University, Seoul 06974, South Korea
| | - Yong Soo Kim
- Department of Physics and Energy Harvest Storage Research Center, University of Ulsan, Ulsan 44610, South Korea
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43
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Luo WX, Liu XL, Chen X, Wu H, Cong X, Lin ML, Tan PH. A tunable Raman system based on ultrafast laser for Raman excitation profile measurement. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2021; 92:123904. [PMID: 34972429 DOI: 10.1063/5.0059099] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/05/2021] [Accepted: 11/17/2021] [Indexed: 06/14/2023]
Abstract
The measurement of the Raman excitation profile (REP) is of great importance to obtain the energies of van Hove singularities and the lifetime of the excited state involved in the Raman process of semiconductors. In this Note, we develop a simple tunable Raman system based on an ultrafast laser and tunable Raman filters for REP measurement. The system is testified by measuring REP of twisted bilayer graphene, and the corresponding energy of van Hove singularity is determined.
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Affiliation(s)
- Wei-Xia Luo
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Xue-Lu Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Xue Chen
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Heng Wu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Xin Cong
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Miao-Ling Lin
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Ping-Heng Tan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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44
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Ryu GH, Jung GS, Park H, Chang RJ, Warner JH. Atomistic Mechanics of Torn Back Folded Edges of Triangular Voids in Monolayer WS 2. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2104238. [PMID: 34708519 DOI: 10.1002/smll.202104238] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/19/2021] [Revised: 09/07/2021] [Indexed: 06/13/2023]
Abstract
Triangular nanovoids in 2D materials transition metal dichalcogenides have vertex points that cause stress concentration and lead to sharp crack propagation and failure. Here, the atomistic mechanics of back folding around triangular nanovoids in monolayer WS2 sheets is examined. Combining atomic-resolution images from annular dark-field scanning transmission electron microscopy with reactive molecular modelling, it is revealed that the folding edge formation has statistical preferences under geometric conditions based on the orientation mismatch. It is further investigated how loading directions and strong interlayer friction, interplay with WS2 lattice's crack preference, govern the deformation and fracture pattern around folding edges. These results provide fundamental insights into the combination of fracture and folding in flexible monolayer crystals and the resultant Moiré lattices.
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Affiliation(s)
- Gyeong Hee Ryu
- School of Materials Science and Engineering, Gyeongsang National University, Jinju, 52828, Republic of Korea
| | - Gang Seob Jung
- Computational Sciences and Engineering Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Hyoju Park
- Materials Graduate Program, Texas Materials Institute, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, TX, 78712, USA
| | - Ren-Jie Chang
- Department of Materials, University of Oxford, 16 Parks Road, Oxford, OX1 3PH, UK
| | - Jamie H Warner
- Walker Department of Mechanical Engineering, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, TX, 78712, USA
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45
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Li Y, Fu R, Duan Z, Zhu C, Fan D. Construction of multifunctional hydrogel based on the tannic acid-metal coating decorated MoS 2 dual nanozyme for bacteria-infected wound healing. Bioact Mater 2021; 9:461-474. [PMID: 34820583 PMCID: PMC8586748 DOI: 10.1016/j.bioactmat.2021.07.023] [Citation(s) in RCA: 93] [Impact Index Per Article: 31.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/14/2021] [Revised: 07/19/2021] [Accepted: 07/20/2021] [Indexed: 12/16/2022] Open
Abstract
Bacterial infection, tissue hypoxia and inflammatory response can hinder the infected wound repair process. To mitigate the above issues, tannic acid-chelated Fe-decorated molybdenum disulfide nanosheets (MoS2@TA/Fe NSs) with dual enzyme activities were developed and anchored to a multifunctional hydrogel. The hydrogel exhibited excellent antibacterial ability owing to the combined effects of photothermal therapy (PTT), glutathione (GSH) loss, and the peroxidase (POD)-like activity (catalyse H2O2 into ·OH under acid condition) of MoS2@TA/Fe NSs. Benefitting from the catalase (CAT)-like activity, the hydrogel could decompose H2O2 into O2 at neutral pH to relieve hypoxia and supply adequate O2. POD-like activity was mainly attributed to MoS2 NSs, while CAT-like activity was primarily due to TA/Fe complex. Moreover, MoS2@TA/Fe NSs endowed the hydrogel with outstanding anti-oxidant ability to scavenge redundant reactive oxygen species (ROS) and reactive nitrogen species (RNS) under neutral environment to maintain the balance of antioxidant systems and prevent inflammation. In addition, the hydrogel could inhibit the release of inflammatory factors for the anti-inflammatory property of TA. TA retained partial phenolic hydroxyl groups, which cross-linked the nanosheets to the network structure of the hydrogel and promoted the adhesion of hydrogels. Due to the dynamic boron ester bonds between polyvinyl alcohol (PVA), dextran (Dex), MoS2@TA/Fe, and borax, the hydrogel demonstrated fast self-healing and rapid shape adaptability. This shape-adaptable adhesive hydrogel could fill the whole wound and closely contact the wound, ensuring that it achieved its functions with maximum efficiency. The MoS2@TA/Fe nanozyme-anchored multifunctional hydrogel showed high potential for bacteria-infected wound healing.
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Affiliation(s)
- Yang Li
- Shaanxi Key Laboratory of Degradable Biomedical Materials, School of Chemical Engineering, Northwest University, Xi'an, 710069, Shaanxi, China.,Shaanxi R&D Center of Biomaterials and Fermentation Engineering, School of Chemical Engineering, Northwest University, Xi'an, 710069, Shaanxi, China.,Biotech. & Biomed. Research Institute, Northwest University, Xi'an, 710069, Shaanxi, China
| | - Rongzhan Fu
- Shaanxi Key Laboratory of Degradable Biomedical Materials, School of Chemical Engineering, Northwest University, Xi'an, 710069, Shaanxi, China.,Shaanxi R&D Center of Biomaterials and Fermentation Engineering, School of Chemical Engineering, Northwest University, Xi'an, 710069, Shaanxi, China.,Biotech. & Biomed. Research Institute, Northwest University, Xi'an, 710069, Shaanxi, China
| | - Zhiguang Duan
- Shaanxi Key Laboratory of Degradable Biomedical Materials, School of Chemical Engineering, Northwest University, Xi'an, 710069, Shaanxi, China.,Shaanxi R&D Center of Biomaterials and Fermentation Engineering, School of Chemical Engineering, Northwest University, Xi'an, 710069, Shaanxi, China.,Biotech. & Biomed. Research Institute, Northwest University, Xi'an, 710069, Shaanxi, China
| | - Chenhui Zhu
- Shaanxi Key Laboratory of Degradable Biomedical Materials, School of Chemical Engineering, Northwest University, Xi'an, 710069, Shaanxi, China.,Shaanxi R&D Center of Biomaterials and Fermentation Engineering, School of Chemical Engineering, Northwest University, Xi'an, 710069, Shaanxi, China.,Biotech. & Biomed. Research Institute, Northwest University, Xi'an, 710069, Shaanxi, China
| | - Daidi Fan
- Shaanxi Key Laboratory of Degradable Biomedical Materials, School of Chemical Engineering, Northwest University, Xi'an, 710069, Shaanxi, China.,Shaanxi R&D Center of Biomaterials and Fermentation Engineering, School of Chemical Engineering, Northwest University, Xi'an, 710069, Shaanxi, China.,Biotech. & Biomed. Research Institute, Northwest University, Xi'an, 710069, Shaanxi, China
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46
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Ouyang W, Sofer R, Gao X, Hermann J, Tkatchenko A, Kronik L, Urbakh M, Hod O. Anisotropic Interlayer Force Field for Transition Metal Dichalcogenides: The Case of Molybdenum Disulfide. J Chem Theory Comput 2021; 17:7237-7245. [PMID: 34719931 PMCID: PMC8592503 DOI: 10.1021/acs.jctc.1c00782] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/04/2021] [Indexed: 11/28/2022]
Abstract
An anisotropic interlayer force field that describes the interlayer interactions in molybdenum disulfide (MoS2) is presented. The force field is benchmarked against density functional theory calculations for both bilayer and bulk systems within the Heyd-Scuseria-Ernzerhof hybrid density functional approximation, augmented by a nonlocal many-body dispersion treatment of long-range correlation. The parametrization yields good agreement with the reference calculations of binding energy curves and sliding potential energy surfaces for both bilayer and bulk configurations. Benchmark calculations for the phonon spectra of bulk MoS2 provide good agreement with experimental data, and the calculated bulk modulus falls in the lower part of experimentally measured values. This indicates the accuracy of the interlayer force field near equilibrium. Under external pressures up to 20 GPa, the developed force field provides a good description of compression curves. At higher pressures, deviations from experimental data grow, signifying the validity range of the developed force field.
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Affiliation(s)
- Wengen Ouyang
- Department
of Engineering Mechanics, School of Civil Engineering, Wuhan University, Wuhan, Hubei 430072, China
| | - Reut Sofer
- School
of Chemistry and The Sackler Center for Computational Molecular and
Materials Science, Tel Aviv University, Tel Aviv 6997801, Israel
| | - Xiang Gao
- School
of Chemistry and The Sackler Center for Computational Molecular and
Materials Science, Tel Aviv University, Tel Aviv 6997801, Israel
| | - Jan Hermann
- Machine
Learning Group, TU Berlin, Marchstr. 23, 10587 Berlin, Germany
- Department
of Mathematics, FU Berlin, Arnimallee 14, 14195 Berlin, Germany
| | - Alexandre Tkatchenko
- Department
of Physics and Materials Science, University
of Luxembourg, L-1511 Luxembourg City, Luxembourg
| | - Leeor Kronik
- Department
of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovoth 76100, Israel
| | - Michael Urbakh
- School
of Chemistry and The Sackler Center for Computational Molecular and
Materials Science, Tel Aviv University, Tel Aviv 6997801, Israel
| | - Oded Hod
- School
of Chemistry and The Sackler Center for Computational Molecular and
Materials Science, Tel Aviv University, Tel Aviv 6997801, Israel
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47
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Zhang K, Guo Y, Larson DT, Zhu Z, Fang S, Kaxiras E, Kong J, Huang S. Spectroscopic Signatures of Interlayer Coupling in Janus MoSSe/MoS 2 Heterostructures. ACS NANO 2021; 15:14394-14403. [PMID: 34463476 DOI: 10.1021/acsnano.1c03779] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The interlayer coupling in van der Waals heterostructures governs a variety of optical and electronic properties. The intrinsic dipole moment of Janus transition metal dichalcogenides (TMDs) offers a simple and versatile approach to tune the interlayer interactions. In this work, we demonstrate how the van der Waals interlayer coupling and charge transfer of Janus MoSSe/MoS2 heterobilayers can be tuned by the twist angle and interface composition. Specifically, the Janus heterostructures with a sulfur/sulfur (S/S) interface display stronger interlayer coupling than the heterostructures with a selenium/sulfur (Se/S) interface as shown by the low-frequency Raman modes. The differences in interlayer interactions are explained by the interlayer distance computed by density-functional theory (DFT). More intriguingly, the built-in electric field contributed by the charge density redistribution and interlayer coupling also play important roles in the interfacial charge transfer. Namely, the S/S and Se/S interfaces exhibit different levels of photoluminescence (PL) quenching of MoS2 A exciton, suggesting enhanced and reduced charge transfer at the S/S and Se/S interface, respectively. Our work demonstrates how the asymmetry of Janus TMDs can be used to tailor the interfacial interactions in van der Waals heterostructures.
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Affiliation(s)
- Kunyan Zhang
- Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Yunfan Guo
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Daniel T Larson
- Department of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Ziyan Zhu
- Department of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Shiang Fang
- Department of Physics and Astronomy, Center for Materials Theory, Rutgers University, Piscataway, New Jersey 08854, United States
| | - Efthimios Kaxiras
- Department of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Jing Kong
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Shengxi Huang
- Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
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48
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Bian R, Li C, Liu Q, Cao G, Fu Q, Meng P, Zhou J, Liu F, Liu Z. Recent progress in the synthesis of novel two-dimensional van der Waals materials. Natl Sci Rev 2021; 9:nwab164. [PMID: 35591919 PMCID: PMC9113016 DOI: 10.1093/nsr/nwab164] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/29/2021] [Revised: 07/21/2021] [Accepted: 08/15/2021] [Indexed: 11/15/2022] Open
Abstract
Abstract
The last decade has witnessed the significant progress of physical fundamental research and great success of practical application in two-dimensional (2D) van der Waals (vdW) materials since the discovery of graphene in 2004. To date, vdW materials is still a vibrant and fast-expanding field, where tremendous reports have been published covering topics from cutting-edge quantum technology to urgent green energy, and so on. Here, we briefly review the emerging hot physical topics and intriguing materials, such as 2D topological materials, piezoelectric materials, ferroelectric materials, magnetic materials and twistronic heterostructures. Then, various vdW material synthetic strategies are discussed in detail, concerning the growth mechanisms, preparation conditions and typical examples. Finally, prospects and further opportunities in the booming field of 2D materials are addressed.
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Affiliation(s)
| | | | | | - Guiming Cao
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Qundong Fu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
- CNRS-International-NTU-Thales Research Alliance (CINTRA), Singapore 637553, Singapore
| | - Peng Meng
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Jiadong Zhou
- Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, and School of Physics, Beijing Institute of Technology, Beijing 100081, China
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49
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Xia R, Jiang S, Chen S, Yang B, Fu J, Yang J, Gao M. Formation of Moiré Superlattices via Surfactant/Nanosheet-Co-mediated Crystallization. J Phys Chem Lett 2021; 12:7901-7907. [PMID: 34382792 DOI: 10.1021/acs.jpclett.1c01735] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Moiré superlattices (MSLs) of two-dimensional (2D) van der Waals materials have attracted considerable attention in recent years; however, studies of bottom-up growth of twisted MSL structures via solution-processed crystallization are rarely reported. Through facile one-pot solvothermal synthesis, here we demonstrate a nonclassical surfactant/nanosheet-co-mediated crystallization pathway for formation of MSL structures with two models of SnS2 and SnSe2. Our experimental results reveal that attractive interactions between 2D inorganic building blocks and surfactant organic molecules during the initial stage of crystallization are crucial to drive surfactant-covered nanosheets to crystallize into molecule-intercalated nanosheet aggregates. Under the high-pressure condition, further crystallograpic fusion can occur if the reaction time is prolonged, which alters the interactions of adjacent layers during the coalescence of small-grain-size 2D domains due to insertion of foreign molecules, leading to interlayer rotations. This work uncovers an interesting organic-inorganic cocrystallization growth mode and provides a novel pathway for large-scale fabrication of MSLs.
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Affiliation(s)
- Rui Xia
- Key Lab for Magnetism and Magnetic Materials of MOE, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, P. R. China
| | - Subin Jiang
- Key Lab for Magnetism and Magnetic Materials of MOE, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, P. R. China
| | - Songbo Chen
- Key Lab for Magnetism and Magnetic Materials of MOE, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, P. R. China
| | - Baojuan Yang
- Key Lab for Magnetism and Magnetic Materials of MOE, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, P. R. China
| | - Jiecai Fu
- Key Lab for Magnetism and Magnetic Materials of MOE, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, P. R. China
| | - Jiao Yang
- School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, P. R. China
| | - Meizhen Gao
- Key Lab for Magnetism and Magnetic Materials of MOE, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, P. R. China
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50
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Grzeszczyk M, Szpakowski J, Slobodeniuk AO, Kazimierczuk T, Bhatnagar M, Taniguchi T, Watanabe K, Kossacki P, Potemski M, Babiński A, Molas MR. The optical response of artificially twisted MoS[Formula: see text] bilayers. Sci Rep 2021; 11:17037. [PMID: 34426607 PMCID: PMC8382769 DOI: 10.1038/s41598-021-95700-5] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/27/2021] [Accepted: 07/27/2021] [Indexed: 11/17/2022] Open
Abstract
Two-dimensional layered materials offer the possibility to create artificial vertically stacked structures possessing an additional degree of freedom-the interlayer twist. We present a comprehensive optical study of artificially stacked bilayers (BLs) MoS[Formula: see text] encapsulated in hexagonal BN with interlayer twist angle ranging from 0[Formula: see text] to 60[Formula: see text] using Raman scattering and photoluminescence spectroscopies. It is found that the strength of the interlayer coupling in the studied BLs can be estimated using the energy dependence of indirect emission versus the A[Formula: see text]-E[Formula: see text] energy separation. Due to the hybridization of electronic states in the valence band, the emission line related to the interlayer exciton is apparent in both the natural (2H) and artificial (62[Formula: see text]) MoS[Formula: see text] BLs, while it is absent in the structures with other twist angles. The interlayer coupling energy is estimated to be of about 50 meV. The effect of temperature on energies and intensities of the direct and indirect emission lines in MoS[Formula: see text] BLs is also quantified.
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Affiliation(s)
- M. Grzeszczyk
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland
| | - J. Szpakowski
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland
| | - A. O. Slobodeniuk
- Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 121 16 Prague 2, Czech Republic
| | - T. Kazimierczuk
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland
| | - M. Bhatnagar
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland
| | - T. Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044 Japan
| | - K. Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044 Japan
| | - P. Kossacki
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland
| | - M. Potemski
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland
- Laboratoire National des Champs Magnétiques Intenses, CNRS-UGA-UPS-INSA-EMFL, 25, Avenue des Martyrs, 38042 Grenoble, France
| | - A. Babiński
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland
| | - M. R. Molas
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, ul. Pasteura 5, 02-093 Warsaw, Poland
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