Nonlayered Two-Dimensional Defective Semiconductor γ-Ga2S3 toward Broadband Photodetection

Polarized Raman spectroscopy study of CVD-grown Cr2S3 flakes: unambiguous identification of phonon modes

We report a systematic Raman spectroscopy investigation of chemical vapor deposited 2D nonlayered Cr2S3, with both linearly and circularly polarized light over a wide temperature range (5-300 K). Temperature-dependent Raman spectra exhibit a good linear relationship between the peak positions of the phonon modes and temperature. Angle-resolved polarized Raman spectra reveal the polarization-dependent optical response of in-plane and out-of-plane phonon modes. Helicity-dependent Raman investigations complete definite assignment of all the phonon modes observed in the Raman spectra of 2D nonlayered Cr2S3 by the optical selection rule based on a Raman tensor. Our work realizes clear phonon mode identification over a wide temperature range for the emerging material 2D Cr2S3, an important representative of nonlayered 2D system with unique properties for optoelectronic and spintronic applications.

Low Temperature Synthesis of 2D p-Type α-In2Te3 with Fast and Broadband Photodetection

2DA 2 III B 3 VI ${\mathrm{A}}_2^{{\mathrm{III}}}{\mathrm{B}}_3^{{\mathrm{VI}}}$ compounds (A = Al, Ga, In, and B = S, Se, and Te) with intrinsic structural defects offer significant opportunities for high-performance and functional devices. However, obtaining 2D atomic-thin nanoplates with non-layered structure on SiO2/Si substrate at low temperatures is rare, which hinders the study of their properties and applications at atomic-thin thickness limits. In this study, the synthesis of ultrathin, non-layered α-In2Te3 nanoplates is demonstrated using a BiOCl-assisted chemical vapor deposition method at a temperature below 350 °C on SiO2/Si substrate. Comprehensive characterization results confirm the high-quality single crystal is the low-temperature cubic phase α-In2Te3 , possessing a noncentrosymmetric defected ZnS structure with good second harmonic generation. Moreover, α-In2Te3 is revealed to be a p-type semiconductor with a direct and narrow bandgap value of 0.76 eV. The field effect transistor exhibits a high mobility of 18 cm2 V-1 s-1, and the photodetector demonstrates stable photoswitching behavior within a broadband photoresponse from 405 to 1064 nm, with a satisfactory response time of τrise = 1 ms. Notably, the α-In2Te3 nanoplates exhibit good stability against ambient environments. Together, these findings establish α-In2Te3 nanoplates as promising candidates for next-generation high-performance photonics and electronics.

Recent Advances on Pulsed Laser Deposition of Large-Scale Thin Films

2D thin films, possessing atomically thin thickness, are emerging as promising candidates for next-generation electronic devices, due to their novel properties and high performance. In the early years, a wide variety of 2D materials are prepared using several methods (mechanical/liquid exfoliation, chemical vapor deposition, etc.). However, the limited size of 2D flakes hinders their fundamental research and device applications, and hence the effective large-scale preparation of 2D films is still challenging. Recently, pulsed laser deposition (PLD) has appeared to be an impactful method for wafer-scale growth of 2D films, owing to target-maintained stoichiometry, high growth rate, and efficiency. In this review, the recent advances on the PLD preparation of 2D films are summarized, including the growth mechanisms, strategies, and materials classification. First, efficacious strategies of PLD growth are highlighted. Then, the growth, characterization, and device applications of various 2D films are presented, such as graphene, h-BN, MoS2, BP, oxide, perovskite, semi-metal, etc. Finally, the potential challenges and further research directions of PLD technique is envisioned.

Phase-Centric MOCVD Enabled Synthetic Approaches for Wafer-Scale 2D Tin Selenides

Following an initial nucleation stage at the flake level, atomically thin film growth of a van der Waals material is promoted by ultrafast lateral growth and prohibited vertical growth. To produce these highly anisotropic films, synthetic or post-synthetic modifications are required, or even a combination of both, to ensure large-area, pure-phase, and low-temperature deposition. A set of synthetic strategies is hereby presented to selectively produce wafer-scale tin selenides, SnSex (both x = 1 and 2), in the 2D forms. The 2D-SnSe2 films with tuneable thicknesses are directly grown via metal-organic chemical vapor deposition (MOCVD) at 200 °C, and they exhibit outstanding crystallinities and phase homogeneities and consistent film thickness across the entire wafer. This is enabled by excellent control of the volatile metal-organic precursors and decoupled dual-temperature regimes for high-temperature ligand cracking and low-temperature growth. In contrast, SnSe, which intrinsically inhibited from 2D growth, is indirectly prepared by a thermally driven phase transition of an as-grown 2D-SnSe2 film with all the benefits of the MOCVD technique. It is accompanied by the electronic n-type to p-type crossover at the wafer scale. These tailor-made synthetic routes will accelerate the low-thermal-budget production of multiphase 2D materials in a reliable and scalable fashion.

Low-Symmetry 2D t-InTe for Polarization-Sensitive UV-Vis-NIR Photodetection

Polarization-sensitive photodetection grounded on low-symmetry 2D materials has immense potential in improving detection accuracy, realizing intelligent detection, and enabling multidimensional visual perception, which has promising application prospects in bio-identification, optical communications, near-infrared imaging, radar, military, and security. However, the majority of the reported polarized photodetection are limited by UV-vis response range and low anisotropic photoresponsivity factor, limiting the achievement of high-performance anisotropic photodetection. Herein, 2D t-InTe crystal is introduced into anisotropic systems and developed to realize broadband-response and high-anisotropy-ratio polarized photodetection. Stemming from its narrow band gap and intrinsic low-symmetry lattice characteristic, 2D t-InTe-based photodetector exhibits a UV-vis-NIR broadband photoresponse and significant photoresponsivity anisotropy behavior, with an exceptional in-plane anisotropic factor of 1.81@808 nm laser, surpassing the performance of most reported 2D counterparts. This work expounds the anisotropic structure-activity relationship of 2D t-InTe crystal, and identifies 2D t-InTe as a prospective candidate for high-performance polarization-sensitive optoelectronics, laying the foundation for future multifunctional device applications.

Epitaxial Growth of Two-Dimensional Nonlayered AuCrS2 Materials via Au-Assisted Chemical Vapor Deposition

Two-dimensional (2D) nonlayered transition metal dichalcogenide (TMD) materials are emergent platforms for various applications from catalysis to quantum devices. However, their limited availability and nonstraightforward synthesis methods hinder our understanding of these materials. Here, we present a novel technique for synthesizing 2D nonlayered AuCrS2 via Au-assisted chemical vapor deposition (CVD). Our detailed structural analysis reveals the layer-by-layer growth of [AuCrS2] units atop an initial CrS2 monolayer, with Au binding to the adjacent monolayer of CrS2, which is in stark contrast with the well-known metal intercalation mechanism in the synthesis of many other 2D nonlayered materials. Theoretical calculations further back the crucial role of Cr in increasing the mobility of Au species and strengthening the adsorption energy of Au on CrS2, thereby aiding the growth throughout the CVD process. Additionally, the resulting free-standing nanoporous AuCrS2 (NP-AuCrS2) exhibits exceptional electrocatalytic properties for the hydrogen evolution reaction.

Gallium Sulfide Quantum Dots with Zinc Sulfide and Alumina Shells Showing Efficient Deep Blue Emission

Solution-processed quantum dot (QD) based blue emitters are of paramount importance in the field of optoelectronics. Despite large research efforts, examples of efficient deep blue/near UV-emitting QDs remain rare due to lack of luminescent wide band gap materials and high defect densities in the existing ones. Here, we introduce a novel type of QDs based on heavy metal free gallium sulfide (Ga2 S3 ) and their core/shell heterostructures Ga2 S3 /ZnS as well as Ga2 S3 /ZnS/Al2 O3 . The photoluminescence (PL) properties of core Ga2 S3 QDs exhibit various decay pathways due to intrinsic defects, resulting in a broad overall PL spectrum. We show that the overgrowth of the Ga2 S3 core QDs with a ZnS shell results in the suppression of the intrinsic defect-mediated states leading to efficient deep-blue emission at 400 nm. Passivation of the core/shell structure with amorphous alumina yields a further enhancement of the PL quantum yield approaching 50 % and leads to an excellent optical and colloidal stability. Finally, we develop a strategy for the aqueous phase transfer of the obtained QDs retaining 80 % of the initial fluorescence intensity.

Electron transport, ferroelectric, piezoelectric and optical properties of two-dimensional In2Te3: a first-principles study

Two-dimensional (2D) materials have garnered significant interest in the fields of optoelectronics and electronics due to their unique and diverse properties. In this work, the electron transport, ferroelectric, piezoelectric, and optical properties of 2D In2Te3 were systematically investigated using first-principles based on density functional theory. The analysis of the phonon spectrum and elastic modulus of the Born effective criterion indicates that the structure of the novel 2D In2Te3 is dynamically stable. The calculation results show that 2D In2Te3 exhibits a carrier mobility as high as 3680.99 cm2 V-1 s-1 (y direction), a high in-plane polarization of 2.428 × 10-10 C m-1, and an excellent ferroelectric phase transition barrier (52.847 meV) and piezoelectric properties (e11 = 1.52 × 10-10 C m-1). The higher carrier mobility is attributed to the band degeneracy and small carrier effective mass. In addition, biaxial strain is an effective way to modulate the band gap and optical properties of 2D In2Te3. These properties indicate that 2D In2Te3 is a promising candidate material for flexible electronic devices and ferroelectric photovoltaic devices.

Room-Temperature Magnetoelectric Coupling in Atomically Thin ε-Fe2 O3

2D multiferroics with magnetoelectric coupling combine the magnetic order and electric polarization in a single phase, providing a cornerstone for constructing high-density information storages and low-energy-consumption spintronic devices. The strong interactions between various order parameters are crucial for realizing such multifunctional applications, nevertheless, this criterion is rarely met in classical 2D materials at room-temperature. Here an ingenious space-confined chemical vapor deposition strategy is designed to synthesize atomically thin non-layered ε-Fe₂ O₃ single crystals and disclose the room-temperature long-range ferrimagnetic order. Interestingly, the strong ferroelectricity and its switching behavior are unambiguously discovered in atomically thin ε-Fe₂ O₃ , accompanied with an anomalous thickness-dependent coercive voltage. More significantly, the robust room-temperature magnetoelectric coupling is uncovered by controlling the magnetism with electric field and verifies the multiferroic feature of atomically thin ε-Fe₂ O₃ . This work not only represents a substantial leap in terms of the controllable synthesis of 2D multiferroics with robust magnetoelectric coupling, but also provides a crucial step toward the practical applications in low-energy-consumption electric-writing/magnetic-reading devices.

Spin Ordering Induced Broadband Photodetection Based on Two-Dimensional Magnetic Semiconductor α-MnSe

Two-dimensional (2D) magnetic semiconductors are considered to have great application prospects in spintronic logic devices, memory devices, and photodetectors, due to their unique structures and outstanding physical properties in 2D confinement. Understanding the influence of magnetism on optical/optoelectronic properties of 2D magnetic semiconductors is a significant issue for constructing multifunctional electronic devices and implementing sophisticated functions. Herein, the influence of spin ordering and magnons on the optical/optoelectronic properties of 2D magnetic semiconductor α-MnSe synthesized by space-confined chemical vapor deposition (CVD) is explored systematically. The spin-ordering-induced magnetic phase transition triggers temperature-dependent photoluminescence spectra to produce a huge transition at Néel temperature (TN  ≈ 160 K). The magnons- and defects-induced emissions are the primary luminescence path below TN and direct internal 4 a T1g →6 A1g transition-induced emissions are the main luminescence path above TN . Additionally, the magnons and defect structures endow 2D α-MnSe with a broadband luminescence from 550 to 880 nm, and an ultraviolet-near-infrared photoresponse from 365 to 808 nm. Moreover, the device also demonstrates improved photodetection performance at 80 K, possibly influenced by spin ordering and trap states associated with defects. These above findings indicate that 2D magnetic semiconductor α-MnSe provides an excellent platform for magneto-optical and magneto-optoelectronic research.

Polymorphic Ga2S3 nanowires: phase-controlled growth and crystal structure calculations

The polymorphism of nanostructures is of paramount importance for many promising applications in high-performance nanodevices. We report the chemical vapor deposition synthesis of Ga₂S₃ nanowires (NWs) that show the consecutive phase transitions of monoclinic (M) → hexagonal (H) → wurtzite (W) → zinc blende (C) when lowering the growth temperature from 850 to 600 °C. At the highest temperature, single-crystalline NWs were grown in the thermodynamically stable M phase. Two types of H phase exhibited 1.8 nm periodic superlattice structures owing to the distinctively ordered Ga sites. They consisted of three rotational variants of the M phase along the growth direction ([001]_M = [0001]_H/W) but with different sequences in the variants. The phases shared the same crystallographic axis within the NWs, producing novel core-shell structures to illustrate the phase evolution. The relative stabilities of these phases were predicted using density functional theory calculations, and the results support the successive phase evolution. Photodetector devices based on the p-type M and H phase Ga₂S₃ NWs showed excellent UV photoresponse performance.

2D Ultrawide Bandgap Semiconductors: Odyssey and Challenges

2D ultrawide bandgap (UWBG) semiconductors have aroused increasing interest in the field of high-power transparent electronic devices, deep-ultraviolet photodetectors, flexible electronic skins, and energy-efficient displays, owing to their intriguing physical properties. Compared with dominant narrow bandgap semiconductor material families, 2D UWBG semiconductors are less investigated but stand out because of their propensity for high optical transparency, tunable electrical conductivity, high mobility, and ultrahigh gate dielectrics. At the current stage of research, the most intensively investigated 2D UWBG semiconductors are metal oxides, metal chalcogenides, metal halides, and metal nitrides. This paper provides an up-to-date review of recent research progress on new 2D UWBG semiconductor materials and novel physical properties. The widespread applications, i.e., transistors, photodetector, touch screen, and inverter are summarized, which employ 2D UWBG semiconductors as either a passive or active layer. Finally, the existing challenges and opportunities of the enticing class of 2D UWBG semiconductors are highlighted.

Ultrasensitive, Ultrafast, and Gate-Tunable Two-Dimensional Photodetectors in Ternary Rhombohedral ZnIn2S4 for Optical Neural Networks

The demand for high-performance semiconductors in electronics and optoelectronics has prompted the expansion of low-dimensional materials research to ternary compounds. However, photodetectors based on 2D ternary materials usually suffer from large dark currents and slow response, which means increased power consumption and reduced performance. Here we report a systematic study of the optoelectronic properties of well-characterized rhombohedral ZnIn₂S₄ (R-ZIS) nanosheets which exhibit an extremely low dark current (7 pA at 5 V bias). The superior performance represented by a series of parameters surpasses most 2D counterparts. The ultrahigh specific detectivity (1.8 × 10¹⁴ Jones), comparably short response time (τ_rise = 222 μs, τ_decay = 158 μs), and compatibility with high-frequency operation (1000 Hz) are particularly prominent. Moreover, a gate-tunable characteristic is observed, which is attributed to photogating and improves the photoresponse by 2 orders of magnitude. Gating technique can effectively modulate the photocurrent-generation mechanism from photoconductive effect to dominant photogating. The combination of ultrahigh sensitivity, ultrafast response, and high gate tunability makes the R-ZIS phototransistor an ideal device for low-energy-consumption and high-frequency optoelectronic applications, which is further demonstrated by its excellent performance in optical neural networks and promising potential in optical deep learning and computing.

Discovery of Robust Ferroelectricity in 2D Defective Semiconductor α-Ga2 Se3

2D ferroelectrics with robust polar order in the atomic-scale thickness at room temperature are needed to miniaturize ferroelectric devices and tackle challenges imposed by traditional ferroelectrics. These materials usually have polar point group structure regarding as a prerequisite of ferroelectricity. Yet, to introduce polar structure into otherwise nonpolar 2D materials for producing ferroelectricity remains a challenge. Here, by combining first-principles calculations and experimental studies, it is reported that the native Ga vacancy-defects located in the asymmetrical sites in cubic defective semiconductor α-Ga₂ Se₃ can induce polar structure. Meanwhile, the induced polarization can be switched in a moderate energy barrier. The switched polarization is observed in 2D α-Ga₂ Se₃ nanoflakes of ≈4 nm with a high switching temperature up to 450 K. Such polarization switching could arise from the displacement of Ga vacancy between neighboring asymmetrical sites by applying an electric field. This work removes the point group limit for ferroelectricity, expanding the range of 2D ferroelectrics into the native defective semiconductors.

Solution-processed two-dimensional materials for next-generation photovoltaics

In the ever-increasing energy demand scenario, the development of novel photovoltaic (PV) technologies is considered to be one of the key solutions to fulfil the energy request. In this context, graphene and related two-dimensional (2D) materials (GRMs), including nonlayered 2D materials and 2D perovskites, as well as their hybrid systems, are emerging as promising candidates to drive innovation in PV technologies. The mechanical, thermal, and optoelectronic properties of GRMs can be exploited in different active components of solar cells to design next-generation devices. These components include front (transparent) and back conductive electrodes, charge transporting layers, and interconnecting/recombination layers, as well as photoactive layers. The production and processing of GRMs in the liquid phase, coupled with the ability to "on-demand" tune their optoelectronic properties exploiting wet-chemical functionalization, enable their effective integration in advanced PV devices through scalable, reliable, and inexpensive printing/coating processes. Herein, we review the progresses in the use of solution-processed 2D materials in organic solar cells, dye-sensitized solar cells, perovskite solar cells, quantum dot solar cells, and organic-inorganic hybrid solar cells, as well as in tandem systems. We first provide a brief introduction on the properties of 2D materials and their production methods by solution-processing routes. Then, we discuss the functionality of 2D materials for electrodes, photoactive layer components/additives, charge transporting layers, and interconnecting layers through figures of merit, which allow the performance of solar cells to be determined and compared with the state-of-the-art values. We finally outline the roadmap for the further exploitation of solution-processed 2D materials to boost the performance of PV devices.

First-Principle Study of Rh-Doped Nitrogen Vacancy Boron Nitride Monolayer for Scavenging and Detecting SF6 Decomposition Products

The scavenging and detection of sulfur hexafluoride (SF6) decomposition products (SO2, H2S, SO2F2, SOF2) critically matters to the stable and safe operation of gas-insulated switchgear (GIS) equipment. In this paper, the Rh-doped nitrogen vacancy boron nitride monolayer (Rh-VNBN) is proposed as a gas scavenger and sensor for the above products. The computational processes are applied to investigate the configurations, adsorption and sensing processes, and electronic properties in the gas/Rh-VNBN systems based on the first-principle calculations. The binding energy (Eb) of the Rh-VNBN reaches -8.437 eV, while the adsorption energy (Ead) and band gap (BG) indicate that Rh-VNBN exhibits outstanding adsorption and sensing capabilities. The density of state (DOS) analysis further explains the mechanisms of adsorption and sensing, demonstrating the potential use of Rh-VNBN in sensors and scavengers of SF6 decomposition products. This study is meaningful as it explores new gas scavengers and sensors of SF6 decomposition products to allow the operational status assessment of GIS equipment.

A Universal Atomic Substitution Conversion Strategy Towards Synthesis of Large-Size Ultrathin Nonlayered Two-Dimensional Materials

Nonlayered two-dimensional (2D) materials have attracted increasing attention, due to novel physical properties, unique surface structure, and high compatibility with microfabrication technique. However, owing to the inherent strong covalent bonds, the direct synthesis of 2D planar structure from nonlayered materials, especially for the realization of large-size ultrathin 2D nonlayered materials, is still a huge challenge. Here, a general atomic substitution conversion strategy is proposed to synthesize large-size, ultrathin nonlayered 2D materials. Taking nonlayered CdS as a typical example, large-size ultrathin nonlayered CdS single-crystalline flakes are successfully achieved via a facile low-temperature chemical sulfurization method, where pre-grown layered CdI₂ flakes are employed as the precursor via a simple hot plate assisted vertical vapor deposition method. The size and thickness of CdS flakes can be controlled by the CdI₂ precursor. The growth mechanism is ascribed to the chemical substitution reaction from I to S atoms between CdI₂ and CdS, which has been evidenced by experiments and theoretical calculations. The atomic substitution conversion strategy demonstrates that the existing 2D layered materials can serve as the precursor for difficult-to-synthesize nonlayered 2D materials, providing a bridge between layered and nonlayered materials, meanwhile realizing the fabrication of large-size ultrathin nonlayered 2D materials.

Electronic Modulation of Non-van der Waals 2D Electrocatalysts for Efficient Energy Conversion

The exploration of efficient electrocatalysts for energy conversion is important for green energy development. Owing to their high surface areas and unusual electronic structure, 2D electrocatalysts have attracted increasing interest. Among them, non-van der Waals (non-vdW) 2D materials with numerous chemical bonds in all three dimensions and novel chemical and electronic properties beyond those of vdW 2D materials have been studied increasingly over the past decades. Herein, the progress of non-vdW 2D electrocatalysts is critically reviewed, with a special emphasis on electronic structure modulation. Strategies for heteroatom doping, vacancy engineering, pore creation, alloying, and heterostructure engineering are analyzed for tuning electronic structures and achieving intrinsically enhanced electrocatalytic performances. Lastly, a roadmap for the future development of non-vdW 2D electrocatalysts is provided from material, mechanism, and performance viewpoints.

2D Silicon-Based Semiconductor Si2 Te3 toward Broadband Photodetection

Silicon-based semiconductor materials dominate modern technology for more than half a century with extraordinary electrical-optical performance and mutual processing compatibility. Now, 2D materials have rapidly established themselves as prospective candidates for the next-generation semiconductor industry because of their novel properties. Considering chemical and processing compatibility, silicon-based 2D materials possess significant advantages in integrating with silicon. Here, a systematic study is reported on the structural, electrical, and optical performance of silicon telluride (Si₂ Te₃ ) 2D material, a IV-VI silicon-based semiconductor with a layered structure. The ultrawide photoluminescence (PL) spectra in the range of 550-1050 nm reveals the intrinsic defects in Si₂ Te₃ . The Si₂ Te₃ -based field-effect transistors (FETs) and photodetectors show a typical p-type behavior and a remarkable broadband spectral response in the range of 405-1064 nm. Notably, the photoresponsivity and detectivity of the photodetector device with 13.5 nm in thickness and upon 405 nm illumination can reach up to 65 A W^-1 and 2.81 × 10¹² Jones, respectively, outperforming many traditional broadband photodetectors. It is believed this work will excite interests in further exploring the practical application of 2D silicon-based materials in the field of optoelectronics.

Few-layer In4/3P2Se6 nanoflakes for high detectivity photodetectors

Metal phosphorus trichalcogenides (MPX₃) have attracted extensive attention as promising two-dimensional (2D) layered materials in future electronic and optoelectronic devices. Here, for the first time, few-layer In_4/3P₂Se₆ nanoflakes have been successfully exfoliated from home-made high-quality single crystals. The In_4/3P₂Se₆ crystal belongs to the R3 space group, and possesses a weak van der Waals force between the adjacent layers and a direct bandgap of 1.99 eV. Furthermore, the In_4/3P₂Se₆-based photodetectors show high performances in the visible light region, such as a high responsivity (R) of 4.93 A·W^-1, a high external quantum efficiency (EQE) of 1509% and a fast response time, as low as 2.1 ms. In particular, the high detectivity (D) of the devices can reach up to 4.3 × 10¹³ Jones (light ON/OFF ratio ≈10⁴) under illumination from a 405 nm light at a bias voltage of 1 V, which is favoured by the ultralow dark current (∼100 fA). These excellent performances pave the way for the implementation of In_4/3P₂Se₆ nanoflakes as promising candidates for future optoelectronic detection applications.

MoS2 Nanoribbons with a Prolonged Photoresponse Lifetime for Enhanced Visible Light Photoelectrocatalytic Hydrogen Evolution

The high recombination rate of photoinduced electron-hole pairs limits the hydrogen production efficiency of the MoS₂ catalyst in photoelectrochemical (PEC) water splitting. The strategy of prolonging the lifetime of photoinduced carriers is of great significance to the promotion of photoelectrocatalytic hydrogen production. An ideal approach is to utilize edge defects, which can capture photoinduced electrons and thus slow down the recombination rate. However, for two-dimensional MoS₂, most of the surface areas are inert basal planes. Here, a simple method for preparing one-dimensional MoS₂ nanoribbons with abundant inherent edges is proposed. The MoS₂ nanoribbon-based device has a good spectral response in the range of 400-500 nm and has a longer lifetime of photoinduced carriers than other MoS₂ nanostructure-based photodetectors. An improved PEC catalytic performance of these MoS₂ nanoribbons is also experimentally verified under the illumination of 405 nm by using the electrochemical microcell technique. This work provides a new strategy to prolong the lifetime of photoinduced carriers for further improvement of PEC activity, and the evaluation of photoelectric performance provides a feasible way for transition-metal dichalcogenides to be widely used in the energy field.

Flower-like hierarchical ZnS-Ga2S3 heterojunction for the adsorption-photo-reduction of Cr(VI)

Adsorption-photo-reduction is considered as a potential route to remove Cr(VI) from wastewater. To explore the novel photocatalysts with efficient adsorption-photocatalytic activity, flower-like hierarchical ZnS-Ga₂S₃ heterojunction was prepared for the solar-light-driven reduction of Cr(VI). Its adsorption-photocatalytic capacity is greatly affected by the ZnS/Ga₂S₃ molar ratio, Cr(VI) content, pH values, and inorganic ions. Among these obtained composites, ZnS-Ga₂S₃-3 with a ZnS/Ga₂S₃ molar ratio of 3:1 exhibits the best adsorption-photocatalytic capacity. The adsorption capacity of ZnS-Ga₂S₃-3 is 54.42 mg g^-1, and its total removal efficiency is 99.10% for 100 mg L^-1 Cr(VI) solution after 160 min. In addition, the adsorption-photo-reduction performance of ZnS-Ga₂S₃-3 is slightly deactivated after nine cycle times. The Langmuir, pseudo-second-order, and first-order models well describe the adsorption isotherm, adsorption kinetic, and photo-reduction kinetic of ZnS-Ga₂S₃-3, respectively. The synergy effect of ZnS and Ga₂S₃ are favorable for the efficient transfer and separation of charge carriers, and provide sufficient vacant sites at the junction interface for the adsorption of Cr(VI).

Comparative Studies on Two-Dimensional (2D) Rectangular and Hexagonal Molybdenum Dioxide Nanosheets with Different Thickness

Molybdenum dioxide (MoO₂) a kind of semi-metal material shows many unique properties, such as high melting point, good thermal stability, large surface area-to-volume ratio, high-density surface unsaturated atoms, and excellent conductivity. There is a strong connection between structural type and optoelectronic properties of 2D nanosheet. Herein, the rectangular and hexagonal types of thin and thick MoO₂ 2D nanosheets were successfully prepared from MoO₃ powder using two-zone chemical vapor deposition (CVD) with changing the experimental parameters, and these fabricated nanosheets displayed different colors under bright-field microscope, possess margins and smooth surface. The thickness of the blue hexagonal and rectangular MoO₂ nanosheets are ~ 25 nm and ~ 30 nm, respectively, while typical thickness of orange-colored nanosheet is around ~ 100 nm. Comparative analysis and investigations were carried out, and mix-crystal phases were indentified in thick MoO₂ as main matrix through Raman spectroscopy. For the first time, the emission bands obtained in thick MoO₂ nanosheets via a Cathodoluminescence (CL) system exhibiting special properties of semi-metallic and semi-conductors; however, no CL emission detected in case of thin nanosheets. The electrical properties of thin MoO₂ nanosheets with different morphologies were compared, and both of them demonstrated varying metallic properties. The resistance of thin rectangular nanosheet was ~ 25 Ω at ± 0.05 V while 64 Ω at ± 0.05 V was reported for hexagonal nanosheet, and observed lesser resistance by rectangular nanosheet than hexagonal nanosheet.

Ga2Se3 Defect Semiconductors: The Study of Direct Band Edge and Optical Properties

Direct band edge is a crucial factor for a functional chalcogenide to be applied in luminescence devices, photodetectors, and solar-energy devices. In this work, the room-temperature band-edge emission of III-VI Ga2Se3 has been first observed by micro-photoluminescence (μPL) measurement. The emission peak is at 1.85 eV, which matches well with the band-edge transition that is measured by micro-thermoreflectance (μTR) and micro-transmittance (μTransmittance) for verification of the direct band edge of Ga2Se3. The temperature-dependent μTR spectra of Ga2Se3 show a general semiconductor behavior with its temperature-energy shift following Varshni-type variation. With the well-evident direct band edge, the peak responsivities of photovoltaic response (∼6.2 mV/μW) and photocurrent (∼2.25 μA/μW at f = 30 Hz) of defect zincblende Ga2Se3 can be, respectively, detected at ∼2.22 and ∼1.92 eV from a Cu/Ga2Se3 Schottky solar cell and a Ga2Se3 photoconductor. On the basis of experimental analysis, the optical band edge and photoresponsivity properties of a III-VI Ga2Se3 defect semiconductor are thus realized.

Atomically Thin Oxyhalide Solar-Blind Photodetectors

2D wide-bandgap semiconductors demonstrate great potential in fabricating solar-blind ultraviolet (SBUV) photodetectors. However, the low responsivity of 2D solar-blind photodetectors still limits their practical applications. Here, high-responsivity solar-blind photodetectors are achieved based on 2D bismuth oxychloride (BiOCl) flakes. The 2D BiOCl photodetectors exhibit a responsivity up to 35.7 A W^-1 and a specific detectivity of 2.2 × 10¹⁰ Jones under 250 nm illumination with 17.8 µW cm^-2 power density. In particular, the enhanced photodetective performances are demonstrated in BiOCl photodetectors with increasing ambient temperature. Surprisingly, their responsivity can reach 2060 A W^-1 at 450 K under solar-blind light illumination, maybe owing to the formation of defective BiOCl grains evidenced by in situ transmission electron microscopy. The high responsivity throughout the solar-blind range indicates that 2D BiOCl is a promising candidate for SBUV detection.

Growth modulation of Ga2S3 horizontal nanowires and its optical properties

Highly ordered Ga₂S₃ horizontal nanowires (NWs) on r-plane sapphire were successfully grown by chemical vapor deposition using carbothermal reduction reaction. By adjusting experimental conditions, the density of NWs has increased from 8.4 × 10⁶ to 4.0 × 10⁷ mm^-2. The morphology, structure, composition and optical properties of Ga₂S₃ NWs were characterized through field emission scanning electron microscopy, atomic force microscope, transmission electron microscopy, x-ray diffraction, Raman, x-ray photoelectron spectroscopy and so on. The Au particles at the end of the NWs prove that the growth of the horizontal NWs is controlled by the VLS mechanism. The measurement of nonlinear properties of Ga₂S₃ nanomaterials indicates one-dimensional Ga₂S₃ processes excellent nonlinear effect. Our work opens a new way to synthesize Ga₂S₃ NWs and provides a reference to explore the optical applications of Ga₂S₃ nanomaterials such as micro tunable laser in the future.

2D material broadband photodetectors

Our review provides a comprehensive overview of the latest evolution of broadband photodetectors (BBPDs) based on 2D materials (2DMs). We begin with BBPDs built on various 2DM channels, including narrow-bandgap 2DMs, 2D topological semimetals, 2D charge density wave compounds, and 2D heterojunctions. Then, we introduce defect-engineered 2DM BBPDs, including vacancy engineering, heteroatom incorporation, and interfacial engineering. Subsequently, we summarize 2DM based mixed-dimensional (0D-2D, 1D-2D, 2D-3D, and 0D-2D-3D) BBPDs. Finally, we provide several viewpoints for the future development of this burgeoning field.

Single-Crystalline γ-Ga2S3 Nanotubes via Epitaxial Conversion of GaAs Nanowires

The chemical transformation of nanowire templates into nanotubes is a promising avenue toward hollow one-dimensional (1D) nanostructures. To date, high-quality single crystalline tubes of nonlayered inorganic crystals have been obtained by solid-state reactions in diffusion couples of nanowires with deposited thin film shells, but this approach presents issues in achieving single-phase tubes with a desired stoichiometry. Chemical transformations with reactants supplied from the gas- or vapor-phase can avoid these complications, allowing single-phase nanotubes to be obtained through self-termination of the reaction once the sacrificial template has been consumed. Here, we demonstrate the realization of this scenario with the transformation of zincblende GaAs nanowires into single-crystalline cubic γ-Ga₂S₃ nanotubes by reaction with sulfur vapor. The conversion proceeds via the formation of epitaxial GaAs-Ga₂S₃ core-shell structures, vacancy injection and aggregation into Kirkendall voids, elastic relaxation of the detached Ga₂S₃ shell, and finally complete incorporation of Ga in a crystalline chalcogenide tube. Absorption and luminescence spectroscopy on individual nanotubes show optoelectronic properties, notably a ∼3.1 eV bandgap and intense band-edge and near band-edge emission consistent with high-quality single crystals, along with transitions between gap-states due to the inherent cation-vacancy defect structure of Ga₂S₃. Our work establishes the transformation of nanowires via vapor-phase reactions as a viable approach for forming single-crystalline hollow 1D nanostructures with promising properties.