Vapor-Phase Incommensurate Heteroepitaxy of Oriented Single-Crystal CsPbBr3 on GaN: Toward Integrated Optoelectronic Applications

Stabilization of CsPbBr3 Nanowires Through SU-8 Encapsulation for the Fabrication of Bilayer Microswimmers with Magnetic and Fluorescence Properties

All-inorganic cesium lead halide (CsPbX3, X = Cl, Br, I) perovskite nanocrystals have drawn great interest because of their excellent photophysical properties and potential applications. However, their poor stability in water greatly limited their use in applications that require stable structures. In this work, a facile approach to stabilize CsPbBr3 nanowires is developed by using SU-8 as a protection medium; thereby creating stable CsPbBr3/SU-8 microstructures. Through photolithography and layer-by-layer deposition, CsPbBr3/SU-8 is used to fabricate bilayer achiral microswimmers (BAMs), which consist of a top CsPbBr3/SU-8 layer and a bottom Fe3O4 magnetic layer. Compared to pure CsPbBr3 nanowires, the CsPbBr3/SU-8 shows long-term structural and fluorescence stability in water against ultrasonication treatment. Due to the magnetic layer, the motion of the microswimmers can be controlled precisely under a rotating magnetic field, allowing them to swim at low Reynolds number and tumble or roll on surfaces. Furthermore, CsPbBr3/SU-8 can be used to fabricate various types of planar microstructures with high throughput, high consistency, and fluorescence properties. This work provides a method for the stabilization of CsPbBr3 and demonstrates the potential to mass fabricate planar microstructures with various shapes, which can be used in different applications such as microrobotics.

High-Throughput Growth of Armored Perovskite Single Crystal Fibers for Pixelated Arrays

The poor machinability of halide perovskite crystals severely hampered their practical applications. Here a high-throughput growth method is reported for armored perovskite single-crystal fibers (SCFs). The mold-embedded melt growth (MEG) method provides each SCF with a capillary quartz shell, thus guaranteeing their integrality when cutting and polishing. Hundreds of perovskite SCFs, exemplified by CsPbBr3, CsPbCl3, and CsPbBr2.5I0.5, with customized dimensions (inner diameters of 150-1000 µm and length of several centimeters), are grown in one batch, with all the SCFs bearing homogeneity in shape, orientation, and optical/electronic properties. Versatile assembly protocols are proposed to directly integrate the SCFs into arrays. The assembled array detectors demonstrated low-level dark currents (< 1 nA) with negligible drift, low detection limit (< 44.84 nGy s-1), and high sensitivity (61147 µC Gy-1 cm-2). Moreover, the SCFs as isolated pixels are free of signal crosstalk while showing uniform X-ray photocurrents, which is in favor of high spatial resolution X-ray imaging. As both MEG and the assembly of SCFs involve none sophisticated processes limiting the scalable fabrication, the strategy is considered to meet the preconditions of high-throughput productions.

On-Substrate Fabrication of CsPbBr3 Single-Crystal Microstructures via Nanoparticle Self-Assembly-Assisted Low-Temperature Sintering

The growth of all-inorganic perovskite single-crystal microstructures on substrates is a promising approach for constructing photonic and electronic microdevices. However, current preparation methods typically involve direct control of ions or atoms, which often depends on specific lattice-matched substrates for epitaxial growth and other stringent conditions that limit the mild preparation and flexibility of device integration. Herein, we present the on-substrate fabrication of CsPbBr3 single-crystal microstructures obtained via a nanoparticle self-assembly assisted low-temperature sintering (NSALS) method. Sintering guided by self-assembled atomically oriented superlattice embryos facilitated the formation of single-crystal microstructures under mild conditions without substrate dependence. The as-prepared on-substrate microstructures exhibited a consistent out-of-plane orientation with a carrier lifetime of up to 82.7 ns. Photodetectors fabricated by using these microstructures exhibited an excellent photoresponse of 9.15 A/W, and the dynamic optical response had a relative standard deviation as low as 0.1831%. The discrete photosensor microarray chip with 174000 pixels in a 100 mm2 area showed a response difference of less than 6%. This method of nanoscale particle-controlled single crystal growth on a substrate offers a perspective for mild-condition preparation and in situ repair of crystals of various types. This advancement can propel the flexible integration and widespread application of perovskite devices.

Vapor Phase Growth of Air-Stable Hybrid Perovskite FAPbBr3 Single-Crystalline Nanosheets

Organic-inorganic hybrid perovskites have attracted tremendous attention owing to their fascinating optoelectronic properties. However, their poor air stability seriously hinders practical applications, which becomes more serious with thickness down to the nanoscale. Here we report a one-step vapor phase growth of HC(NH2)2PbBr3 (FAPbBr3) single-crystalline nanosheets of tunable size up to 50 μm and thickness down to 20 nm. The FAPbBr3 nanosheets demonstrate high stability for over months of exposure to air with no degradation in surface roughness and photoluminescence efficiency. Besides, the FAPbBr3 photodetectors exhibit superior overall performance as compared to previous devices based on nonlayered perovskite nanosheets, such as an ultralow dark current of 24 pA, an ultrahigh responsivity of 1033 A/W, an external quantum efficiency over 3000%, a rapid response time around 25 ms, and a high on/off ratio of 104. This work provides a strategy to tackle the challenges of hybrid perovskites toward integrated optoelectronics with requirements of nanoscale thickness, high stability, and excellent performance.

Inorganic perovskite-based active multifunctional integrated photonic devices

The development of highly efficient active integrated photonic circuits is crucial for advancing information and computing science. Lead halide perovskite semiconductors, with their exceptional optoelectronic properties, offer a promising platform for such devices. In this study, active micro multifunctional photonic devices were fabricated on monocrystalline CsPbBr3 perovskite thin films using a top-down etching technique with focused ion beams. The etched microwire exhibited a high-quality micro laser that could serve as a light source for integrated devices, facilitating angle-dependent effective propagation between coupled perovskite-microwire waveguides. Employing this strategy, multiple perovskite-based active integrated photonic devices were realized for the first time. These devices included a micro beam splitter that coherently separated lasing signals, an X-coupler performing transfer matrix functions with two distinguishable light sources, and a Mach-Zehnder interferometer manipulating the splitting and coalescence of coherent light beams. These results provide a proof-of-concept for active integrated functionalized photonic devices based on perovskite semiconductors, representing a promising avenue for practical applications in integrated optical chips.

On-chip integrated exceptional surface microlaser

The on-chip integrated visible microlaser is a core unit of high-speed visible-light communication with huge bandwidth resources, which needs robustness against fabrication errors, compressible linewidth, reducible threshold, and in-plane emission. However, until now, it has been a great challenge to meet these requirements simultaneously. Here, we report a scalable strategy to realize a robust on-chip integrated visible microlaser with further improved lasing performances enabled by the increased orders (n) of exceptional surfaces, and experimentally verify the strategy by demonstrating the performances of a second-order exceptional surface-tailored microlaser. We further prove the potential application of the strategy by discussing an exceptional surface-tailored topological microlaser with unique performances. This work lays a foundation for further development of on-chip integrated high-speed visible-light communication and processing systems, provides a platform for the fundamental study of non-Hermitian photonics, and proposes a feasible method of joint research for non-Hermitian photonics with nonlinear optics and topological photonics.

Heteroepitaxy of Large-Area, Monocrystalline Lead Halide Perovskite Films on Gallium Arsenide

Lead halide perovskite materials have been emerging as promising candidates for high-performance optoelectronic devices. Significant efforts have sought to realize monocrystalline perovskite films on a large scale. Here, we epitaxially grow monocrystalline methylammonium lead tribromide (MAPbBr₃) films on lattice-matched gallium arsenide (GaAs) substrates on a centimeter scale. In particular, a solution-processed lead(II) sulfide (PbS) layer provides a lattice-matched and chemical protective interface for the solid-gas reaction to form MAPbBr₃ films on GaAs. Structure characterizations identify the crystal orientations in the trilayer MAPbBr₃/PbS/GaAs epistructure and confirm the monocrystalline nature of MAPbBr₃ on PbS/GaAs. The dynamic evolution of surface morphologies during the growth indicates a two-step epitaxial process. These fundamental understandings and practical growth techniques offer a viable guideline to approach high-quality perovskite films for previously inaccessible applications.

Interlayer-Assisted Growth of Si-Based All-Inorganic Perovskite Films via Chemical Vapor Deposition for Sensitive and Stable X-ray Detection

All-inorganic perovskites are considered as preferred materials for next-generation X-ray detectors. However, preparing high-quality thick films by traditional solution-based methods remains challenging due to the low solubility of the precursors. In this work, chemical vapor deposition technology is employed to grow Si-based all-inorganic cesium-lead-bromide perovskite thick films. By introducing a SnO₂ nanocrystal interlayer onto the Si substrate to facilitate the heterogeneous nucleation of the perovskite, we are able to grow high-quality films with a smooth surface and compact grains at a relatively low substrate temperature of 260 °C. The resultant X-ray detectors exhibit a decent sensitivity of 2930 μC Gy_air^-1 cm^-2, a small dark current density of 1.5 nA cm^-2, and a low detection limit of 120 nGy_air s^-1. Moreover, the devices show excellent biasing stability with a record small baseline drift of 4.6 × 10^-9 nA cm^-1 s^-1 V^-1 under a large electric field of 1100 V/cm among all perovskite polycrystalline film-based detectors ever reported.

All Optical Switching through Anistropic Gain of CsPbBr3 Single Crystal Microplatelet

Perovskite micro/nanostructures have recently emerged as a highly attractive gain material for nanolasers. To explore their applications and further improve performance, it is essential to understand the optical gain and the anisotropic properties. Herein, we obtained high quality CsPbBr₃ microplatelets (MP) with anisotropic orthorhombic phase. Optical gain of CsPbBr₃ single crystal MP was investigated via microscale variable stripe-length measurement. A polarization-dependent optical gain was observed, and the gain along [002] was larger than that of [1-10]. The behavior was attributed to the lowest energy transition dipole moment of [002] induced by the smaller deviation of Br-Pb-Br bond from the perfect lattice. Along the [002] direction, we obtained the optical gain value up to 5077 cm^-1, which is the record value ever reported. Moreover, all optical switching of lasing is realized by periodical polarized excitation. Our results provide new perceptions in the design of novel functional anisotropic devices based on perovskite micro/nanostructures.

Free-Standing Metal Halide Perovskite Nanowire Arrays with Blue-Green Heterostructures

Vertically aligned metal halide perovskite (MHP) nanowires are promising for various optoelectronic applications, which can be further enhanced by heterostructures. However, present methods to obtain free-standing vertically aligned MHP nanowire arrays and heterostructures lack the scalability needed for applications. We use a low-temperature solution process to prepare free-standing vertically aligned green-emitting CsPbBr₃ nanowires from anodized aluminum oxide templates. The length is controlled from 1 to 20 μm by the precursor amount. The nanowires are single-crystalline and exhibit excellent photoluminescence, clear light guiding and high photoconductivity with a responsivity of 1.9 A/W. We demonstrate blue-green heterostructured nanowire arrays by converting the free-standing part of the nanowires to CsPbCl_1.1Br_1.9 in an anion exchange process. Our results demonstrate a scalable, self-aligned, and lithography-free approach to achieve high quality free-standing MHP nanowires arrays and heterostructures, offering new possibilities for optoelectronic applications.

Mixed Dimethylammonium/Methylammonium Lead Halide Perovskite Crystals for Improved Structural Stability and Enhanced Photodetection

The solvent acidolysis crystallization technique is utilized to grow mixed dimethylammonium/methylammonium lead tribromide (DMA/MAPbBr₃ ) crystals reaching the highest dimethylammonium incorporation of 44% while maintaining the 3D cubic perovskite phase. These mixed perovskite crystals show suppression of the orthorhombic phase and a lower tetragonal-to-cubic phase-transition temperature compared to MAPbBr₃ . A distinct behavior is observed in the temperature-dependent photoluminescence properties of MAPbBr₃ and mixed DMA/MAPbBr₃ crystals due to the different organic cation dynamics governing the phase transition(s). Furthermore, lateral photodetectors based on these crystals show that, at room temperature, the mixed crystals possess higher detectivity compared to MAPbBr₃ crystals caused by structural compression and reduced surface trap density. Remarkably, the mixed-crystal devices exhibit large enhancement in their detectivity below the phase-transition temperature (at 200 K), while for the MAPbBr₃ devices only insignificant changes are observed. The high detectivity of the mixed crystals makes them attractive for visible-light communication and for space applications. The results highlight the importance of the synthetic technique for compositional engineering of halide perovskites that governs their structural and optoelectronic properties.

Space-confined growth of large-mismatch CsPb(BrxCI1−x)3/GaN heterostructures with tunable band alignments and optical properties

Space-confined growth strategy is developed to grow large-mismatch CsPb(Br1−xClx)3/GaN heterostructures with type-II band alignment and tunable optical properties'.

Highly Tunable Enhancement and Switching of Nonlinear Emission from All-Inorganic Lead Halide Perovskites via Electric Field

Herein, we demonstrate a highly tunable enhancement and switching of nonlinear emission from all-inorganic metal halide perovskites based on an asymmetrically biased metal-insulator-semiconductor (MIS) structure. We achieve 2 orders of magnitude enhancement of the two-photon-pumped photoluminescence (TPL) from CsPbBr₃ microplates with the MIS structure, due to comprehensive effects including localized field effect, trap-filling effect, and collection enhancement. In particular, taking advantage of electric-field-induced passivation/activation of Br vacancies, we realize highly tunable TPL enhancement, ranging from ∼61.2-fold to ∼370.3-fold. Moreover, we demonstrate an efficient modulation of the two-photon-pumped lasing from the MIS structure, which exhibits electric field induced switching with a high on/off ratio of 67:1. This work has opened new avenues for steering carrier transport and nonlinear emission in lead halide perovskites, which shows great promise for realizing high-efficiency and tunable nonlinear nanophotonic devices.

Microsteganography on all inorganic perovskite micro-platelets by direct laser writing

Direct laser writing (DLW) is a mask-free and cost-efficient micro-fabrication technology, which has been explored to pattern structures on perovskites. However, there is still a lack of research on DLW methods for microsteganography. Herein, we developed a sophisticated DLW condition to pattern on CsPbBr₃ perovskite micro-platelets (MPs). In addition to the reversible PL quenching caused by photo-induced ion migration, permanent nonradiative centers are also produced by the DLW treatment. Therefore, the patterned information is retained after long-term storage. Meanwhile, the mild DLW condition only results in a faint trace, which is almost invisible under a regular optical microscope. Thus, the patterned information is hidden unless applying an excitation source, which paves the way for applications in microsteganography and anti-counterfeiting. As a proof-of-concept, different patterns are drawn on the CsPbBr₃ MPs by DLW, which are only observable under a fluorescence microscope.

Oriented Halide Perovskite Nanostructures and Thin Films for Optoelectronics

Oriented semiconductor nanostructures and thin films exhibit many advantageous properties, such as directional exciton transport, efficient charge transfer and separation, and optical anisotropy, and hence these nanostructures are highly promising for use in optoelectronics and photonics. The controlled growth of these structures can facilitate device integration to improve optoelectronic performance and benefit in-depth fundamental studies of the physical properties of these materials. Halide perovskites have emerged as a new family of promising and cost-effective semiconductor materials for next-generation high-power conversion efficiency photovoltaics and for versatile high-performance optoelectronics, such as light-emitting diodes, lasers, photodetectors, and high-energy radiation imaging and detectors. In this Review, we summarize the advances in the fabrication of halide perovskite nanostructures and thin films with controlled dimensionality and crystallographic orientation, along with their applications and performance characteristics in optoelectronics. We examine the growth methods, mechanisms, and fabrication strategies for several technologically relevant structures, including nanowires, nanoplates, nanostructure arrays, single-crystal thin films, and highly oriented thin films. We highlight and discuss the advantageous photophysical properties and remarkable performance characteristics of oriented nanostructures and thin films for optoelectronics. Finally, we survey the remaining challenges and provide a perspective regarding the opportunities for further progress in this field.

Halide Perovskite Semiconductor Lasers: Materials, Cavity Design, and Low Threshold

Solution-processable semiconductor lasers have been a long-standing challenge for next-generation displays, light sources, and communication technologies. Metal halide perovskites, which combine the advantages of inorganic and organic semiconductors, have recently emerged not only as excellent candidates for solution-processable lasers but also as potential complementary gain materials for filling the "green gap" and supplement industrial nanolasers based on classic II-VI/III-V semiconductors. Numerous perovskite lasers have been developed successfully with superior performance in terms of cost-effectiveness, low threshold, high coherence, and multicolor tunability. This mini review surveys the development, current status, and perspectives of perovskite lasers, categorized into thin film lasers, nanocrystals lasers, microlasers, and device concepts including polariton and bound-in-continuum lasers with a focus on material fundamentals, cavity design, and low-threshold devices in addition to critical issues such as mass fabrication and applications.

Large-Scale Thin CsPbBr3 Single-Crystal Film Grown on Sapphire via Chemical Vapor Deposition: Toward Laser Array Application

Single-crystal perovskites with excellent photophysical properties are considered to be ideal materials for optoelectronic devices, such as lasers, light-emitting diodes and photodetectors. However, the growth of large-scale perovskite single-crystal films (SCFs) with high optical gain by vapor-phase epitaxy remains challenging. Herein, we demonstrated a facile method to fabricate large-scale thin CsPbBr₃ SCFs (∼300 nm) on the c-plane sapphire substrate. High temperature is found to be the key parameter to control low reactant concentration and sufficient surface diffusion length for the growth of continuous CsPbBr₃ SCFs. Through the comprehensive study of the carrier dynamics, we clarify that the trapped-related exciton recombination has the main effect under low carrier density, while the recombination of excitons and free carriers coexist until free carriers plays the dominate role with increasing carrier density. Furthermore, an extremely low-threshold (∼8 μJ cm^-2) amplified spontaneous emission was achieved at room temperature due to the high optical gain up to 1255 cm^-1 at a pump power of 20 times threshold (∼20 P_th). A microdisk array was prepared using a focused ion beam etching method, and a single-mode laser was achieved on a 3 μm diameter disk with the threshold of 1.6 μJ cm^-2. Our experimental results not only present a versatile method to fabricate large-scale SCFs of CsPbBr₃ but also supply an arena to boost the optoelectronic applications of CsPbBr₃ with high performance.

Plasmonic Nanolasers in On-Chip Light Sources: Prospects and Challenges

The plasmonic nanolaser is a class of lasers with the physical dimensions free from the optical diffraction limit. In the past decade, progress in performance, applications, and mechanisms of plasmonic nanolasers has increased dramatically. We review this advance and offer our prospectives on the remaining challenges ahead, concentrating on the integration with nanochips. In particular, we focus on the qualifications for electrical pumping, energy consumption, and ultrafast modulation. At last, we evaluate the strategies for on-chip source construction design and further threshold reduction to achieve a long-term room-temperature electrically pumped plasmonic nanolaser, the ultimate goal toward practical applications.

Perovskite-Gallium Phosphide Platform for Reconfigurable Visible-Light Nanophotonic Chip

Reduction of the wavelength in on-chip light circuitry is critically important not only for the sake of keeping up with Moore's law for photonics but also for reaching toward the spectral ranges of operation of emerging materials, such as atomically thin semiconductors, vacancy-based single-photon emitters, and quantum dots. This requires efficient and tunable light sources as well as compatible waveguide networks. For the first challenge, halide perovskites are prospective materials that enable cost-efficient fabrication of micro- and nanolasers. On the other hand, III-V semiconductor nanowires are optimal for guiding of visible light as they exhibit a high refractive index as well as excellent shape and crystalline quality beneficial for strong light confinement and long-range waveguiding. Here, we develop an integrated platform for visible light that comprises gallium phosphide (GaP) nanowires directly embedded into compact CsPbBr₃-based light sources. In our devices, perovskite microcrystals support stable room-temperature lasing and broadband chemical tuning of the emission wavelength in the range of 530-680 nm, whereas GaP nanowaveguides support efficient outcoupling of light, its subwavelength (<200 nm) confinement, and long-range guiding over distances more than 20 μm. As a highlight of our approach, we demonstrate sequential transfer and conversion of light using an intermediate perovskite nanoparticle in a chain of GaP nanowaveguides.

A Photoisomerization-Activated Intramolecular Charge-Transfer Process for Broadband-Tunable Single-Mode Microlasers

Miniaturized lasers with high spectral purity and wide wavelength tunability are crucial for various photonic applications. Here we propose a strategy to realize broadband-tunable single-mode lasing based on a photoisomerization-activated intramolecular charge-transfer (ICT) process in coupled polymer microdisk cavities. The photoisomerizable molecules doped in the polymer microdisks can be quantitatively transformed into a kind of laser dye with strong ICT character by photoexcitation. The gain region was tailored over a wide range through the self-modulation of the optically activated ICT isomers. Meanwhile, the resonant modes shifted with the photoisomerization because of a change in the effective refractive index of the polymer microdisk cavity. Based on the synergetic modulation of the optical gain and microcavity, we realized the broadband tuning of the single-mode laser. These results offer a promising route to fabricate broadband-tunable microlasers towards practical photonic integrations.

Micro- and Nanopatterning of Halide Perovskites Where Crystal Engineering for Emerging Photoelectronics Meets Integrated Device Array Technology

Tremendous efforts have been devoted to developing thin film halide perovskites (HPs) for use in high-performance photoelectronic devices, including solar cells, displays, and photodetectors. Furthermore, structured HPs with periodic micro- or nanopatterns have recently attracted significant interest due to their potential to not only improve the efficiency of an individual device via the controlled arrangement of HP crystals into a confined geometry, but also to technologically pixelate the device into arrays suitable for future commercialization. However, micro- or nanopatterning of HPs is not usually compatible with conventional photolithography, which is detrimental to ionic HPs and requires special techniques. Herein, a comprehensive overview of the state-of-the-art technologies used to develop micro- and nanometer-scale HP patterns, with an emphasis on their controlled microstructures based on top-down and bottom-up approaches, and their potential for future applications, is provided. Top-down approaches include modified conventional lithographic techniques and soft-lithographic methods, while bottom-up approaches include template-assisted patterning of HPs based on lithographically defined prepatterns and self-assembly. HP patterning is shown here to not only improve device performance, but also to reveal the unprecedented functionality of HPs, leading to new research areas that utilize their novel photophysical properties.

Transferable High-Quality Inorganic Perovskites for Optoelectronic Devices by Weak Interaction Heteroepitaxy

Transferable semiconductors with superior light-emitting properties are important for developing flexible and integrated optoelectronics. However, finding such a qualified candidate remains challenging. Here, we report the fabrication of transferable high-quality CsPbBr₃ single crystals on a highly oriented pyrolytic graphite (HOPG) substrate via weak interaction heteroepitaxy for the first time. Semi-quantitative kinetic analysis based on the classical nucleation theory well accounts for the van der Waals (vdW) epitaxial growth process of perovskite on the HOPG substrate. The density functional theory calculations illustrate the bonding nature of the interface and predict the Volmer-Weber growth mode in vdW epitaxy, which is consistent with our experimental observations. Importantly, the extremely weak vdW interaction between the perovskite and HOPG not only enables the high quality of the crystals but also endows them with the facile transferability to any foreign substrate by the mechanical exfoliation technique. Leveraging on the transferred CsPbBr₃ single crystals, the low-threshold microlasers and monolithic perovskite light-emitting diode devices are demonstrated. Our results represent a significant step toward advanced optoelectronic devices relying on the emerging perovskite semiconductors.

Inverse Growth of Large-Grain-Size and Stable Inorganic Perovskite Micronanowire Photodetectors

Control of forward and inverse reactions between perovskites and precursor materials is key to attaining high-quality perovskite materials. Many techniques focus on synthesizing nanostructured CsPbX₃ materials (e.g., nanowires) via a forward reaction (CsX + PbX₂ → CsPbX₃). However, low solubility of inorganic perovskites and complex phase transition make it difficult to realize the precise control of composition and length of nanowires using the conventional forward approach. Herein, we report the self-assembly inverse growth of CsPbBr₃ micronanowires (MWs) (CsPb₂Br₅ → CsPbBr₃ + PbBr₂↑) by controlling phase transition from CsPb₂Br₅ to CsPbBr₃. The two-dimensional (2D) structure of CsPb₂Br₅ serves as nucleation sites to induce initial CsPbBr₃ MW growth. Also, phase transition allows crystal rearrangement and slows down crystal growth, which facilitates the MW growth of CsPbBr₃ crystals along the 2D planes of CsPb₂Br₅. A CsPbBr₃ MW photodetector constructed based on the inverse growth shows a high responsivity of 6.44 A W^-1 and detectivity of ∼10¹² Jones. Large grain size, high crystallinity, and large thickness can effectively alleviate decomposition/degradation of perovskites, which leads to storage stability for over 60 days in humid environment (relative humidity = 45%) and operational stability for over 3000 min under illumination (wavelength = 400 nm, light intensity = 20.06 mW cm^-2).